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BM-11EG88NI

BM-11EG88NI

  • 厂商:

    BRIGHT(博瑞泰)

  • 封装:

  • 描述:

    BM-11EG88NI - 38mm (1.5") matrix height 8×8 dot matrix display - BRIGHT LED ELECTRONICS CORP

  • 数据手册
  • 价格&库存
BM-11EG88NI 数据手册
BRIGHT LED ELECTRONICS CORP. SINCE 1981 BM-11EG88NI ● 1. 2. 3. 4. 5. 6. 7. 8. 9. Features : 1.496 inch (38.00mm) matrix height. Dot size 3.7mm. Low power requirement. Excellent characters appearance. Solid state reliability. Multiplex drive , column cathode com. and row anode com. Duple color available. Categorized for luminous intensity. Stackable vertically and horizontally. ● Package Dimensions : 37.9(1.492) 28.2(1.110) PIN1. 37.9(1.492) 3.7(.146) 10.30(.406) 0.50(.020) 2.54x11=27.94(1.1) 3.0(.118) MIN. ● 1. 2. Description : Notes: 1. All dimensions are in millimeters(inches). matrix height 8×8 dot matrix display. 2. Tolerance is ±0.25mm(.01")unless otherwise This product use hi-eff red chips and green specified. chips, the hi-eff red chips are made from 3. Specifications are subject to change without notice. GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate. This product have a gray face and white dots. The BM-11EG88NI is a 38mm (1.5") 3. ● Internal Circuit Diagram : Ver.1.0 Page 1 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BM-11EG88NI ● Absolute Maximum Ratings(Ta=25℃) Parameter Power Dissipation Per Dot Forward Current Per Dot Peak Forward Current Per Dot Reverse Voltage Per Dot Operating Temperature Storage Temperature Soldering Temperature (1/16" From Body) Symbol Pd IF IFP (Duty 1/10, 1KHZ) VR Topr Tstg Tsol Hi-Eff Red 80 30 150 5 Green 80 30 150 Unit mW mA mA V - -40℃~80℃ -40℃~85℃ 260℃ For 5 Seconds ● Electrical And Optical Characteristics(Ta=25℃) Hi-Eff Red Parameter Forward Voltage Per Dot Luminous Intensity Per Dot Reverse Current Per Dot Peak Wave Length Dominant Wave Length Spectral Line Half-width Symbol Condition VF Iv IR λp λd ∆λ IF=10mA IF=10mA VR=5V IF=10mA IF=10mA IF=10mA Min. 626 - Typ. 1.9 10.0 640 40 Max. 2.5 100 636 - Unit V mcd µA nm nm nm Green Parameter Forward Voltage Per Dot Luminous Intensity Per Dot Reverse Current Per Dot Peak Wave Length Dominant Wave Length Spectral Line Half-width Symbol Condition VF Iv IR λp λd ∆λ IF=10mA IF=10mA VR=5V IF=10mA IF=10mA IF=10mA Min. 569 - Typ. 2.1 10.0 568 30 Max. 2.5 100 574 - Unit V mcd µA nm nm nm Ver.1.0 Page 2 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BM-11EG88NI ● Typical Electro-Optical Characteristics Curves (25℃ Ambient Temperature Unless Otherwise Noted) 1.0 Fig.1 Relative Radiant Intensity VS. Wavelength (G) (E) Relative Radiant Intensity 0.5 0 530 560 590 Wavelength(nm) 620 650 680 710 (E) (G) Relative Luminous Intensity (@20mA) 3 4 5 50 Fig.2 Forward Current VS. Forward Voltage 3.0 2.5 2.0 1.5 1.0 0.5 Fig.3 Relative Luminous Intensity VS. Ambient Temperature Forward Current (mA) 40 30 20 10 0 1 2 Forward Voltage (V) Fig.4 Relative Luminous Intensity VS. Forward Current 0 -40 Ambient Temperature Ta( C) Fig.5 Forward Current Derating Curve VS. Ambient Temperature -20 0 20 40 60 Relative Luminous Intensity (@20mA) 3.0 50 40 30 20 10 0 2.0 (G) (E) 1.0 0.0 Forward Current(mA) 0 10 20 30 40 50 Forward Current(mA) Ambient Temperature Ta( C) 20 40 60 80 100 120 Ver.1.0 Page 3 of 3
BM-11EG88NI 价格&库存

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