BQ2012SN-D107TR

bq2012 Gas Gauge IC With Slow-Charge Control Features General Description means of controlling charge based on the battery's charge state. ➤ Conservative and repeatable measurement of available charge in rechargeable batteries The bq2012 Gas Gauge IC is intended for battery-pack or in-system installation to maintain an accurate record of available battery charge. The IC monitors a voltage drop across a sense resistor connected in series between the negative battery terminal and ground to determine charge and discharge activity of the battery. Nominal available charge may be directly indicated using a five- or sixsegment LED display. These segments are used to graphically indicate nominal available charge. ➤ Charge control output ➤ Designed for battery pack integration - 120µA typical standby current (self-discharge estimation mode) - Small size enables implementations in as little as 1 2 square inch of PCB ➤ Integrate within a system or as a stand-alone device - Display capacity via singlewire serial communication port or direct drive of LEDs ➤ Measurements compensated for current and temperature Self-discharge of NiMH and NiCd batteries is estimated based on an internal timer and temperature sensor. Compensations for battery temperature and rate of charge or discharge are applied to the charge, discharge, and self-discharge calculations to provide available charge information across a wide range of operating conditions. Battery capacity is automatically recalibrated, or “learned,” in the course of a discharge cycle from full to empty. ➤ 16-pin narrow SOIC The bq2012 includes a charge control output that, when used with other full-charge safety termination methods, can provide a cost-effective Pin Connections Pin Names ➤ Self-discharge compensation using internal temperature sensor LCOM LCOM 1 16 VCC SEG1/PROG1 2 15 REF SEG2/PROG2 3 14 CHG SEG3/PROG3 4 13 DQ SEG4/PROG4 5 12 EMPTY SEG5/PROG5 6 11 SB SEG6/PROG6 7 10 DISP VSS 8 9 LED common output SEG1/PROG1 LED segment 1/ program 1 input SEG2/PROG2 LED segment 2/ program 2 input SEG3/PROG3 LED segment 3/ program 3 input SEG4/PROG4 LED segment 4/ program 4 input The bq2012 supports a simple single-line bidirectional serial link to an external processor (common ground). The bq2012 outputs battery information in response to external commands over the serial link. Internal registers include available charge, temperature, capacity, battery ID, battery status, and programming pin settings. To support subassembly testing, the outputs may also be controlled. The external processor may also overwrite some of the bq2012 gas gauge data registers. The bq2012 may operate directly from three or four cells. With the REF output and an external transistor, a simple, inexpensive regulator can be built to provide VCC across a greater number of cells. REF Voltage reference output CHG Charge control output DQ Serial communications input/output EMPTY Empty battery indicator output SB Battery sense input DISP Display control input SR Sense resistor input VCC 3.0–6.5V VSS System ground SR 16-Pin Narrow SOIC PN201201.eps SEG5/PROG5 LED segment 5/ program 5 input SEG6/PROG6 LED segment 6/ program 6 input 9/96 B 1 bq2012 SR Pin Descriptions LCOM The voltage drop (VSR) across the sense resistor RS is monitored and integrated over time to interpret charge and discharge activity. The SR input is tied to the high side of the sense resistor. VSR < VSS indicates discharge, and VSR > VSS indicates charge. The effective voltage drop (VSRO) as seen by the bq2012 is VSR + VOS (see Table 5). LED common output Open-drain output switches VCC to source current for the LEDs. The switch is off during initialization to allow reading of the soft pull-up or pull-down program resistors. LCOM is also high impedance when the display is off. SEG1– SEG6 DISP LED display segment outputs (dual function with PROG1–PROG6) Programmed full count selection inputs (dual function with SEG1–SEG2) These three-level input pins define the programmed full count (PFC) thresholds described in Table 2. PROG3– PROG4 SB Gas gauge rate selection inputs (dual function with SEG3–SEG4) Self-discharge rate selection (dual function with SEG5) EMPTY Display mode selection (dual function with SEG6) DQ This three-level pin defines the display operation shown in Table 1. CHG Battery empty output This open-drain output becomes highimpedance on detection of a valid end-ofdischarge voltage (VEDVF) and is low following the next application of a valid charge. This three-level input pin defines the selfdischarge compensation rate shown in Table 1. PROG6 Secondary battery input This input monitors the single-cell voltage potential through a high-impedance resistive divider network for end-of-discharge voltage (EDV) thresholds, maximum charge voltage (MCV), and battery removed. These three-level input pins define the scale factor described in Table 2. PROG5 Display control input DISP high disables the LED display. DISP tied to VCC allows PROGX to connect directly to VCC or VSS instead of through a pull-up or pull-down resistor. DISP floating allows the LED display to be active during a valid charge or during discharge if the NAC register is updated at a rate equivalent to VSRO ≤ -4mV. DISP low activates the display. See Table 1. Each output may activate an LED to sink the current sourced from LCOM. PROG1– PROG2 Sense resistor input Serial I/O pin This is an open-drain bidirectional pin. REF Charge control output Voltage reference output for regulator REF provides a voltage reference output for an optional micro-regulator. This open-drain output becomes active low when charging is allowed. Valid charging conditions are described in the Charge Control section. 2 VCC Supply voltage input VSS Ground bq2012 Figure 1 shows a typical battery pack application of the bq2012 using the LED display capability as a chargestate indicator. The bq2012 can be configured to display capacity in either a relative or an absolute display mode. The relative display mode uses the last measured discharge capacity of the battery as the battery “full” reference. The absolute display mode uses the programmed full count (PFC) as the full reference, forcing each segment of the display to represent a fixed amount of charge. A push-button display feature is available for momentarily enabling the LED display. Functional Description General Operation The bq2012 determines battery capacity by monitoring the amount of charge input to or removed from a rechargeable battery. The bq2012 measures discharge and charge currents, estimates self-discharge, monitors the battery for low-battery voltage thresholds, and compensates for temperature and charge/discharge rates. The charge measurement is made by monitoring the voltage across a small-value series sense resistor between the negative battery terminal and ground. The available battery charge is determined by monitoring this voltage over time and correcting the measurement for the environmental and operating conditions. The bq2012 monitors the charge and discharge currents as a voltage across a sense resistor (see RS in Figure 1). A filter between the negative battery terminal and the SR pin may be required if the rate of change of the battery current is too great. R1 1M bq2012 Gas Gauge IC Q1 ZVNL110A REF LCOM SEG1/PROG1 VCC C1 0.1 F SB VCC SEG2/PROG2 SEG3/PROG3 DISP SEG4/PROG4 SR VCC RB1 RB2 SEG5/PROG5 SEG6/PROG6 RS VSS EMPTY CHG DQ Charger Indicates optional. Directly connect to VCC across 3 or 4 cells (3 to 4.8V nominal,should not exceed 6.5V) with a resistor and a Zener diode to limit voltage during charge. Otherwise, R1, C1, and Q1 are needed for regulation of >4 cells. The value of R1 depends on the number of cells. Load Programming resistors (6 max.) and ESD-protection diodes are not shown. R-C on SR may be required (application-specific), where the R should not exceed 100k. FG201201.eps Figure 1. Battery Pack Application Diagram—LED Display 3 bq2012 available over the serial port in 10°C increments as shown below: Voltage Thresholds In conjunction with monitoring VSR for charge/discharge currents, the bq2012 monitors the single-cell battery potential through the SB pin. The single-cell voltage potential is determined through a resistor/divider network per the following equation: TMPGG (hex) Temperature Range 0x < -30°C RB1 = N −1 RB2 1x -30°C to -20°C 2x -20°C to -10°C 3x -10°C to 0°C 4x 0°C to 10°C 5x 10°C to 20°C 6x 20°C to 30°C 7x 30°C to 40°C 8x 40°C to 50°C 9x 50°C to 60°C Ax 60°C to 70°C Bx 70°C to 80°C Cx > 80°C where N is the number of cells, RB1 is connected to the positive battery terminal, and RB2 is connected to the negative battery terminal. The single-cell battery voltage is monitored for the end-of-discharge voltage (EDV) and for maximum cell voltage (MCV). EDV threshold levels are used to determine when the battery has reached an “empty” state, and the MCV threshold is used for fault detection during charging. Two EDV thresholds for the bq2012 are fixed at: EDV1 (early warning) = 1.05V EDVF (empty) = 0.95V If VSB is below either of the two EDV thresholds, the associated flag is latched and remains latched, independent of VSB, until the next valid charge. During discharge and charge, the bq2012 monitors VSR for various thresholds. These thresholds are used to compensate the charge and discharge rates. Refer to the count compensation section for details. EDV monitoring is disabled if VSR ≤ -250mV typical and resumes 1 2 second after VSR > -250mV. Layout Considerations EMPTY Output The bq2012 measures the voltage differential between the SR and VSS pins. VOS (the offset voltage at the SR pin) is greatly affected by PC board layout. For optimal results, the PC board layout should follow the strict rule of a single-point ground return. Sharing high-current ground with small signal ground causes undesirable noise on the small signal nodes. Additionally: The EMPTY output switches to high impedance when VSB < VEDF and remains latched until a valid charge occurs. The bq2012 also monitors VSB relative to VMCV, 2.25V. VSB falling from above VMCV resets the device. Reset The bq2012 recognizes a valid battery whenever VSB is greater than 0.1V typical. VSB rising from below 0.25V or falling from above 2.25V resets the device. Reset can also be accomplished with a command over the serial port as described in the Register Reset section. Temperature The bq2012 internally determines the temperature in 10°C steps centered from -35°C to +85°C. The temperature steps are used to adapt charge and discharge rate compensations, self-discharge counting, and available charge display translation. The temperature range is 4 ■ The capacitors (SB and VCC) should be placed as close as possible to the SB and VCC pins, respectively, and their paths to VSS should be as short as possible. A high-quality ceramic capacitor of 0.1µf is recommended for VCC. ■ The sense resistor (RS) should be as close as possible to the bq2012. ■ The R-C on the SR pin should be located as close as possible to the SR pin. The maximum R should not exceed 100K. bq2012 1. Gas Gauge Operation Last Measured Discharge (LMD) or learned battery capacity: The operational overview diagram in Figure 2 illustrates the operation of the bq2012. The bq2012 accumulates a measure of charge and discharge currents, as well as an estimation of self-discharge. Charge and discharge currents are temperature and rate compensated, whereas self-discharge is only temperature compensated. LMD is the last measured discharge capacity of the battery. On initialization (application of VCC or battery replacement), LMD = PFC. During subsequent discharges, the LMD is updated with the latest measured capacity in the Discharge Count Register (DCR) representing a discharge from full to below EDV1. A qualified discharge is necessary for a capacity transfer from the DCR to the LMD register. The LMD also serves as the 100% reference threshold used by the relative display mode. The main counter, Nominal Available Charge (NAC), represents the available battery capacity at any given time. Battery charging increments the NAC register, while battery discharging and self-discharge decrement the NAC register and increment the DCR (Discharge Count Register). 2. Programmed Full Count (PFC) or initial battery capacity: The Discharge Count Register (DCR) is used to update the Last Measured Discharge (LMD) register only if a complete battery discharge from full to empty occurs without any partial battery charges. Therefore, the bq2012 adapts its capacity determination based on the actual conditions of discharge. The initial LMD and gas gauge rate values are programmed by using PROG1–PROG4. The PFC also provides the 100% reference for the absolute display mode. The bq2012 is configured for a given application by selecting a PFC value from Table 2. The correct PFC may be determined by multiplying the rated battery capacity in mAh by the sense resistor value: The battery’s initial capacity is equal to the programmed full count (PFC) shown in Table 2. Until LMD is updated, NAC counts up to but not beyond this threshold during subsequent charges. This approach allows the gas gauge to be charger-independent and compatible with any type of charge regime. Inputs PFC (mVh) Selecting a PFC slightly less than the rated capacity for absolute mode provides capacity above the full reference for much of the battery’s life. Charge Current Discharge Current Self-Discharge Timer Rate and Temperature Compensation Rate and Temperature Compensation Temperature Compensation + Main Counters and Capacity Reference (LMD) Battery capacity (mAh) * sense resistor (Ω) = + - Nominal Available Charge (NAC) < Last Measured Discharged (LMD) Temperature Step, Other Data Temperature Translation Outputs Chip-Controlled Available Charge LED Display Serial Port Figure 2. Operational Overview 5 + Discharge Count Qualified Register (DCR) Transfer FG201002.eps bq2012 Select: Example: Selecting a PFC Value PFC = 33792 counts or 211mVh PROG1 = float PROG2 = float PROG3 = float PROG4 = low PROG5 = float PROG6 = float Given: Sense resistor = 0.1Ω Number of cells = 6 Capacity = 2200mAh, NiCd battery Current range = 50mA to 2A Absolute display mode Serial port only Self-discharge = C 64 Voltage drop over sense resistor = 5mV to 200mV The initial full battery capacity is 211mVh (2110mAh) until the bq2012 “learns” a new capacity with a qualified discharge from full to EDV1. Therefore: 2200mAh * 0.1Ω = 220mVh Table 1. bq2012 Programming Pin Connection PROG5 Self-Discharge Rate PROG6 Display Mode DISP Display State H Self-discharge disabled NAC = PFC on reset LED disabled 64 Absolute LED enabled on discharge when VSRO < -4mV or during a valid charge 47 Relative LED on Z NAC L NAC Note: PROG5 and PROG6 states are independent. Table 2. bq2012 Programmed Full Count mVh Selections PROGx Programmed Full Count (PFC) PROG3 = H PROG4 = L PROG4 = Z 1 2 - - - Scale = 1/80 Scale = 1/160 Scale = 1/320 Scale = 1/640 H H 49152 614 307 154 H Z 45056 563 282 H L 40960 512 256 Z H 36864 461 Z Z 33792 422 Z L 30720 384 L H 27648 346 173 86.4 43.2 21.6 10.8 mVh L Z 25600 320 160 80.0 40.0 20.0 10.0 mVh L L 22528 282 141 70.4 35.2 17.6 8.8 mVh 90 45 22.5 11.25 5.56 2.8 mV VSR is equivalent to 2 counts/sec. (nom.) PROG3 = Z PROG3 = L PROG3 = H PROG3 = Z PROG3 = L Units Scale = 1/1280 Scale = 1/2560 mVh/ count 76.8 38.4 19.2 mVh 141 70.4 35.2 17.6 mVh 128 64.0 32.0 16.0 mVh 230 115 57.6 28.8 14.4 mVh 211 106 53.0 26.4 13.2 mVh 192 96.0 48.0 24.0 12.0 mVh 6 bq2012 3. Nominal Available Charge (NAC): Charge Control NAC counts up during charge to a maximum value of LMD and down during discharge and self-discharge to 0. NAC is reset to 0 on initialization (PROG6 = Z or low) and on reaching EDV1. NAC is set to PFC on initialization if PROG6 = high. To prevent overstatement of charge during periods of overcharge, NAC stops incrementing when NAC = LMD. 4. Charge control is provided by the CHG output. This output is asserted continuously when: NAC < 0.94 * LMD and 0.95V < VSB < 2.25V and 0°C < Temp < 50°C and BRM = 0 This output is asserted at a 1 16 duty cycle (low for 0.5 sec and high for 7.5 sec) when the above conditions are not met and: Discharge Count Register (DCR): The DCR counts up during discharge independent of NAC and could continue increasing after NAC has decremented to 0. DCR stops counting when EDV1 is reached. Prior to NAC = 0 (empty battery), both discharge and self-discharge increment the DCR. After NAC = 0, only discharge increments the DCR. The DCR resets to 0 when NAC = LMD. The DCR does not roll over but stops counting when it reaches FFFFh. NAC < LMD and 0.95V < VSB < 2.25V and Temp < 50°C and BRM = 0 This output is also asserted at a 1 16 duty cycle (low for 0.5 sec and high for 7.5 sec) for a 2-hour top-off period after: NAC = LMD and Temp < 50°C and 0.95V < VSB < 2.25V and BRM = 0 The DCR value becomes the new LMD value on the first charge after a valid discharge to VEDV1 if: No valid charge initiations (charges greater than 256 NAC counts; where VSRO > VSRQ) occurred during the period between NAC = LMD and EDV1 detected. This output is inactive when: NAC = LMD (after a 2-hour top-off period) or Temp > 50°C or VSB < 0.95V or VSB > 2.25V or BRM = 1 The self-discharge count is not more than 4096 counts (8% to 18% of PFC, specific percentage threshold determined by PFC). The temperature is ≥ 0°C when the EDV1 level is reached during discharge. The top-off timer (2 hours) is reset to allow another topoff after the battery is discharged to 0.8 * LMD (PROG6 = L) or 0.8 * PFC (PROG6 = Z or H). The valid discharge flag (VDQ) indicates whether the present discharge is valid for LMD update. Caution: The charge control output (CHG) should be used with other forms of charge termination such as ∆T/∆t and -∆V. Charge Counting Charge activity is detected based on a positive voltage on the VSR input. If charge activity is detected, the bq2012 increments NAC at a rate proportional to VSRO (VSR + VOS) and, if enabled, activates the LED display if the rate is equivalent to VSRO > 4mV. Charge actions increment the NAC after compensation for charge rate and temperature. If charge terminates due to maximum temperature, the battery temperature must fall typically 10°C below 50°C before the charge output becomes active again. Discharge Counting All discharge counts where VSRO < VSRD cause the NAC register to decrement and the DCR to increment. Exceeding the fast discharge threshold (FDQ) if the rate is equivalent to VSRO < -4mV activates the display, if enabled. The display becomes inactive after VSRO rises above -4mV. V SRD is a programmable threshold as described in the Digital Magnitude Filter section. The default value for VSRD is -300µV. The bq2012 determines charge activity sustained at a continuous rate equivalent to VSRO > VSRQ. A valid charge equates to sustained charge activity greater than 256 NAC counts. Once a valid charge is detected, charge counting continues until VSRO falls below VSRQ. VSRQ is a programmable threshold as described in the Digital Magnitude Filter section. The default value for VSRQ is 375µV. 7 bq2012 Where N = Number of 10°C steps below 10°C and -150mV < V SR < 0. Self-Discharge Estimation The bq2012 continuously decrements NAC and increments DCR for self-discharge based on time and temperature. The self-discharge count rate is programmed to be a nominal 1 64 * NAC or 1 47 * NAC per day or disabled as selected by PROG5. This is the rate for a battery whose temperature is between 20°–30°C. The NAC register cannot be decremented below 0. For example: T > 10°C : Nominal compensation, N = 0 0°C < T < 10°C: N = 1 (i.e., 1.0 becomes 1.05) -10°C < T < 0°C: N = 2 (i.e., 1.0 becomes 1.10) -20°C < T < -10°C: N = 3 (i.e., 1.0 becomes 1.15) Count Compensations -20°C < T < -30°C: N = 4 (i.e., 1.0 becomes 1.20) The bq2012 determines fast charge when the NAC updates at a rate of ≥2 counts/sec. Charge and discharge are compensated for temperature and charge/discharge rate before updating the NAC and/or DCR. Self-discharge estimation is compensated for temperature before updating the NAC or DCR. Self-Discharge Compensation The self-discharge compensation is programmed for a nominal rate of 1 64 * NAC or 1 47 * NAC per day. This is the rate for a battery within the 20–30°C temperature range (TMPGG = 6x). This rate varies across 8 ranges from 70°C, doubling with each higher temperature step (10°C). See Table 3. Charge Compensation Two charge efficiency compensation factors are used for trickle charge and fast charge. Fast charge is defined as a rate of charge resulting in ≥ 2 NAC counts/sec (≥ 0.15C to 0.32C depending on PFC selections; see Table 2). The compensation defaults to the fast charge factor until the actual charge rate is determined. Table 3. Self-Discharge Compensation Temperature Step Temperature adapts the charge rate compensation factors over three ranges between nominal, warm, and hot temperatures. The compensation factors are shown below. Charge Temperature Trickle Charge Compensation Fast Charge Compensation 40°C 0.65 0.80 Typical Rate PROG5 = Z < 10°C NAC 10–20°C NAC 20–30°C NAC 30–40°C NAC 40–50°C NAC 50–60°C NAC PROG5 = L NAC 256 188 NAC 128 NAC 64 NAC 32 NAC 16 NAC 8 94 47 23 .5 11 .8 5 .88 Digital Magnitude Filter The bq2012 has a programmable digital filter to eliminate charge and discharge counting below a set threshold. The default setting is -0.30mV for VSRD and +0.38mV for VSRQ. The proper digital filter setting can be calculated using the following equation. Table 4 shows typical digital filter settings. Discharge Compensation Corrections for the rate of discharge are made by adjusting an internal discharge compensation factor. The discharge factor is based on the dynamically measured VSR. The compensation factors during discharge are: VSRD (mV) = -45 / DMF VSRQ (mV) = -1.25 * VSRD Approximate VSR Threshold Discharge Compensation Factor Efficiency VSR > -150 mV 1.00 100% VSR < -150 mV 1.05 95% Table 4. Typical Digital Filter Settings DMF 75 100 150 (default) 175 200 Temperature compensation during discharge also takes place. At lower temperatures, the compensation factor increases by 0.05 for each 10°C temperature range below 10°C. Compensation factor = 1.0 + (0.05 * N) 8 DMF Hex. 4B 64 96 AF C8 VSRD (mV) -0.60 -0.45 -0.30 -0.26 -0.23 VSRQ (mV) 0.75 0.56 0.38 0.32 0.28 bq2012 The communication protocol is asynchronous return-toone. Command and data bytes consist of a stream of eight bits that have a maximum transmission rate of 333 bits/sec. The least-significant bit of a command or data byte is transmitted first. The protocol is simple enough that it can be implemented by most host processors using either polled or interrupt processing. Data input from the bq2012 may be sampled using the pulse-width capture timers available on some microcontrollers. Error Summary Capacity Inaccurate The LMD is susceptible to error on initialization or if no updates occur. On initialization, the LMD value includes the error between the programmed full capacity and the actual capacity. This error is present until a valid discharge occurs and LMD is updated (see DCR description). The other cause of LMD error is battery wear-out. As the battery ages, the measured capacity must be adjusted to account for changes in actual battery capacity. Communication is normally initiated by the host processor sending a BREAK command to the bq2012. A BREAK is detected when the DQ pin is driven to a logic-low state for a time, tB or greater. The DQ pin should then be returned to its normal ready-high logic state for a time, tBR. The bq2012 is now ready to receive a command from the host processor. A Capacity Inaccurate counter (CPI) is maintained and incremented each time a valid charge occurs (qualified by NAC; see the CPI register description) and is reset whenever LMD is updated from the DCR. The counter does not wrap around but stops counting at 255. The capacity inaccurate flag (CI) is set if LMD has not been updated following 64 valid charges. The return-to-one data bit frame consists of three distinct sections. The first section is used to start the transmission by either the host or the bq2012 taking the DQ pin to a logic-low state for a period, tSTRH,B. The next section is the actual data transmission, where the data should be valid by a period, tDSU, after the negative edge used to start communication. The data should be held for a period, tDV, to allow the host or bq2012 to sample the data bit. Current-Sensing Error Table 5 illustrates the current-sensing error as a function of VSR. A digital filter eliminates charge and discharge counts to the NAC register when VSRO (VSR + VOS) is between VSRQ and VSRD. The final section is used to stop the transmission by returning the DQ pin to a logic-high state by at least a period, tSSU, after the negative edge used to start communication. The final logic-high state should be held until a period, tSV, to allow time to ensure that the bit transmission was stopped properly. The timings for data and break communication are given in the serial communication timing specification and illustration sections. Communicating With the bq2012 The bq2012 includes a simple single-pin (DQ plus return) serial data interface. A host processor uses the interface to access various bq2012 registers. Battery characteristics may be easily monitored by adding a single contact to the battery pack. The open-drain DQ pin on the bq2012 should be pulled up by the host system, or may be left floating if the serial interface is not used. Communication with the bq2012 is always performed with the least-significant bit being transmitted first. Figure 3 shows an example of a communication sequence to read the bq2012 NAC register. The interface uses a command-based protocol, where the host processor sends a command byte to the bq2012. The command directs the bq2012 to either store the next eight bits of data received to a register specified by the command byte or output the eight bits of data specified by the command byte. bq2012 Registers The bq2012 command and status registers are listed in Table 6 and described in the following sections. Table 5. Current-Sensing Error as a Function of VSR Symbol Parameter Typical Maximum Units Notes INL Integrated non-linearity error ±2 ±4 % Add 0.1% per °C above or below 25°C and 1% per volt above or below 4.25V. INR Integrated nonrepeatability error ±1 ±2 % Measurement repeatability given similar operating conditions. 9 bq2012 Table 6. bq2012 Command and Status Registers Control Field Symbol Register Name Loc. (hex) Read/ Write 7(MSB) 6 5 4 3 2 1 0(LSB) CMDR Command register 00h Write W/R AD6 AD5 AD4 AD3 AD2 AD1 AD0 FLGS1 Primary status flags register 01h Read CHGS BRP BRM CI VDQ CHG EDV1 EDVF 02h Read TMP3 TMP2 TMP1 TMP0 GG3 GG2 GG1 GG0 Temperature TMPGG and gas gauge register NACH Nominal available charge high byte register 03h R/W NACH7 NACH6 NACH5 NACH4 NACH3 NACH2 NACH1 NACH0 NACL Nominal available charge low byte register 17h Read NACL7 NACL6 NACL5 NACL4 NACL3 NACL2 NACL1 NACL0 BATID Battery identification register 04h R/W BATID7 BATID6 BATID5 BATID4 BATID3 BATID2 BATID1 BATID0 LMD Last measured discharge register 05h R/W LMD7 LMD6 LMD5 LMD4 LMD3 LMD2 LMD1 LMD0 FLGS2 Secondary status flags register 06h Read CR DR2 DR1 DR0 n/u n/u n/u OVLD PPD Program pin pull-down register 07h Read n/u n/u PPD6 PPD5 PPD4 PPD3 PPD2 PPD1 PPU Program pin pull-up register 08h Read n/u n/u PPU6 PPU5 PPU4 PPU3 PPU2 PPU1 CPI Capacity inaccurate count register 09h Read CPI7 CPI6 CPI5 CPI4 CPI3 CPI2 CPI1 CPI0 DMF Digital magnitude filter register 0ah R/W DMF7 DMF6 DMF5 DMF4 DMF3 DMF2 DMF1 DMF0 RST Reset register 39h Write RST 0 0 0 0 0 0 0 Note: n/u = not used 10 bq2012 Written by Host to bq2012 CMDR = 03h LSB MSB Break 1 1 0 0 0 0 0 0 Received by Host to bq2012 NAC = 65h LSB MSB 1 0 1 0 011 0 DQ TD201201.eps Figure 3. Typical Communication With the bq2012 The charge status flag (CHGS) is asserted when a valid charge rate is detected. Charge rate is deemed valid when VSRO > VSRQ. A VSRO of less than VSRQ or discharge activity clears CHGS. Command Register (CMDR) The write-only CMDR register is accessed when eight valid command bits have been received by the bq2012. The CMDR register contains two fields: ■ W/R bit ■ Command address The CHGS values are: FLGS1 Bits The W/R bit of the command register is used to select whether the received command is for a read or a write function. 7 6 5 4 3 2 1 0 CHGS - - - - - - - Where CHGS is: The W/R values are: 0 Either discharge activity detected or VSRO < VSRQ 1 VSRO > VSRQ CMDR Bits 7 6 5 4 3 2 1 0 W/R - - - - - - - The battery replaced flag (BRP) is asserted whenever the potential on the SB pin (relative to VSS), VSB, falls from above the maximum cell voltage, MCV (2.25V), or rises above 0.1V. The BRP flag is also set when the bq2012 is reset (see the RST register description). BRP is reset when either a valid charge action increments NAC to be equal to LMD, or a valid charge action is detected after the EDV1 flag is asserted. BRP = 1 signifies that the device has been reset. Where W/R is: 0 The bq2012 outputs the requested register contents specified by the address portion of CMDR. 1 The following eight bits should be written to the register specified by the address portion of CMDR. The BRP values are: The lower seven-bit field of CMDR contains the address portion of the register to be accessed. Attempts to write to invalid addresses are ignored. FLGS1 Bits CMDR Bits 7 - 6 5 AD6 AD5 4 AD4 3 AD3 2 AD2 1 0 AD1 AD0 (LSB) 7 6 5 4 3 2 1 0 - BRP - - - - - - Where BRP is: Primary Status Flags Register (FLGS1) The read-only FLGS1 register (address=01h) contains the primary bq2012 flags. 11 0 Battery is charged until NAC = LMD or discharged until the EDV1 flag is asserted 1 VSB dropping from above MCV, VSB rising from below 0.1V, or a serial port initiated reset has occurred bq2012 Where VDQ is: The battery removed flag (BRM) is asserted whenever the potential on the SB pin (relative to VSS) rises above MCV or falls below 0.1V. The BRM flag is asserted until the condition causing BRM is removed. The BRM values are: FLGS1 Bits 7 6 5 4 3 2 1 0 - - BRM - - - - - 0 SDCR ≥ 4096, subsequent valid charge action detected, or EDV1 is asserted with the temperature less than 0°C 1 On first discharge after NAC = LMD The charge control flag, CHG, is asserted whenever the CHG pin is asserted (see the charge control section on page 7 for a description of the CHG pin function). The CHG values are: Where BRM is: 0 0.1V < VSB < 2.25V 1 0.1 V > VSB or VSB > 2.25V 7 - The capacity inaccurate flag (CI) is used to warn the user that the battery has been charged a substantial number of times since LMD has been updated. The CI flag is asserted on the 64th charge after the last LMD update or when the bq2012 is reset. The flag is cleared after an LMD update. FLGS1 Bits 6 5 4 3 2 1 0 - - - CI - - - - 1 FLGS1 Bits 4 3 2 CHG 1 - 0 - 0 When the CHG pin is asserted active low, signifying that the bq2012 is in a state to allow charge activity. 1 When the CHG pin is high-impedance, signifying that no charge activity should take place. The first end-of-discharge warning flag (EDV1) warns the user that the battery is almost empty. The first segment pin, SEG1, is modulated at a 4Hz rate if the display is enabled once EDV1 is asserted, which should warn the user that loss of battery power is imminent. The EDV1 flag is latched until a valid charge has been detected. Where CI is: 0 5 - Where CHG is: The CI values are: 7 6 - When LMD is updated with a valid full discharge The EDV1 values are: After the 64th valid charge action with no LMD updates 7 - The valid discharge flag (VDQ) is asserted when the bq2012 is discharged from NAC = LMD. The flag remains set until either LMD is updated or one of three actions that can clear VDQ occurs: ■ The self-discharge count register (SDCR) has exceeded the maximum acceptable value (4096 counts) for an LMD update. ■ A valid charge action sustained at VSRO > VSRQ for at least 256 NAC counts. ■ The EDV1 flag was set at a temperature below 0°C 5 4 3 2 1 0 - - - - VDQ - - - FLGS1 Bits 4 3 - 2 - 1 EDV1 0 - 0 Valid charge action detected, VSB ≥ 1.05V 1 VSB < 1.05V providing that OVLD=0 (see FLGS2 register description) The final end-of-discharge warning flag (EDVF) flag is used to warn that battery power is at a failure condition. All segment drivers are turned off. The EDVF flag is latched until a valid charge has been detected. The EMPTY pin is also forced to a high-impedance state on assertion of EDV1. The host system may pull EMPTY high, which may be used to disable circuitry to prevent deep-discharge of the battery. FLGS1 Bits 6 5 - Where EDV1 is: The VDQ values are: 7 6 - 12 bq2012 The EDVF values are: Table 7. Temperature Register Translation FLGS1 Bits 7 6 5 4 3 2 1 0 TMP3 TMP2 TMP1 TMP0 - - - - - - - EDVF 0 0 0 0 T < -30°C 0 0 0 1 -30°C < T < -20°C Where EDVF is: Temperature 0 0 1 0 -20°C < T < -10°C 0 Valid charge action detected, VSB ≥ 0.95V 0 0 1 1 -10°C < T < 0°C 1 VSB < 0.95V providing that OVLD=0 (see FLGS2 register description) 0 1 0 0 0°C < T < 10°C 0 1 0 1 10°C < T < 20°C Temperature and Gas Gauge Register (TMPGG) 0 1 1 0 20°C < T < 30°C 0 1 1 1 30°C < T < 40°C 1 0 0 0 40°C < T < 50°C 1 0 0 1 50°C < T < 60°C 1 0 1 0 60°C < T < 70°C 1 0 1 1 70°C < T < 80°C 1 1 0 0 T > 80°C The read-only TMPGG register (address=02h) contains two data fields. The first field contains the battery temperature. The second field contains the available charge from the battery. TMPGG Temperature Bits 7 6 5 TMP3 TMP2 4 TMP1 TMP0 3 2 1 - - - 0 The adjustment between > 0°C and -20°C < T < 0°C has a 10°C hysteresis. The bq2012 contains an internal temperature sensor. The temperature is used to set charge and discharge efficiency factors as well as to adjust the self-discharge coefficient. Nominal Available Charge Registers (NACH/NACL) The read/write NACH high-byte register (address=03h) and the read-only NACL low-byte register (address=17h) are the main gas gauging register for the bq2012. The NAC registers are incremented during charge actions and decremented during discharge and self-discharge actions. The correction factors for charge/discharge efficiency are applied automatically to NAC. The temperature register contents may be translated as shown in Table 7. The bq2012 calculates the available charge as a function of NAC, temperature, and a full reference, either LMD or PFC. The results of the calculation are available via the display port or the gas gauge field of the TMPGG register. The register is used to give available capacity in 1 16 increments from 0 to 15 16. On reset, if PROG6 = Z or low, NACH and NACL are cleared to 0; if PROG6 = high, NACH = PFC and NACL = 0. When the bq2012 detects a valid EDV1, NACH and NACL are reset to 0. Writing to the NAC registers affects the available charge counts and, therefore, affects the bq2012 gas gauge operation. Do not write the NAC registers to a value greater than LMD. TMPGG Gas Gauge Bits 7 6 5 4 3 2 1 0 - - - - GG3 GG2 GG1 GG0 Battery Identification Register (BATID) The gas gauge display and the gas gauge portion of the TMPGG register are adjusted for cold temperature dependencies. A piece-wise correction is performed as follows: The read/write BATID register (address=04h) is available for use by the system to determine the type of battery pack. The BATID contents are retained as long as VCC is greater than 2V. The contents of BATID have no effect on the operation of the bq2012. There is no default setting for this register. Temperature Available Capacity Calculation > 0°C NAC / “Full Reference” -20°C < T < 0°C 0.75 * NAC / “Full Reference” Last Measured Discharge Register (LMD) < -20°C 0.5 * NAC / “Full Reference” LMD is a read/write register (address=05h) that the bq2012 uses as a measured full reference. The bq2012 adjusts LMD based on the measured discharge capacity 13 bq2012 of the battery from full to empty. In this way the bq2012 updates the capacity of the battery. LMD is set to PFC during a bq2012 reset. DR2–0 and OVLD are set based on the measurement of the voltage at the SR pin relative to VSS. The rate at which this measurement is made varies with device activity. Secondary Status Flags Register (FLGS2) Program Pin Pull-Down Register (PPD) The read-only FLGS2 register (address=06h) contains the secondary bq2012 flags. The read-only PPD register (address=07h) contains some of the programming pin information for the bq2012. The segment drivers, SEG1–6, have a corresponding PPD register location, PPD1–6. A given location is set if a pull-down resistor has been detected on its corresponding segment driver. For example, if SEG1 and SEG4 have pull-down resistors, the contents of PPD are xx001001. The charge rate flag (CR) is used to denote the fast charge regime. Fast charge is assumed whenever a charge action is initiated. The CR flag remains asserted if the charge rate does not fall below 2 counts/sec. The CR values are: Program Pin Pull-Up Register (PPU) The read-only PPU register (address=08h) contains the rest of the programming pin information for the bq2012. The segment drivers, SEG1–6, have a corresponding PPU register location, PPU1–6. A given location is set if a pull-up resistor has been detected on its corresponding segment driver. For example, if SEG3 and SEG6 have pull-up resistors, the contents of PPU are xx100100. FLGS2 Bits 7 6 5 4 3 2 1 0 CR - - - - - - - Where CR is: 0 When charge rate falls below 2 counts/sec 1 When charge rate is above 2 counts/sec PPD/PPU Bits 8 The fast charge regime efficiency factors are used when CR = 1. When CR = 0, the trickle charge efficiency factors are used. The time to change CR varies due to the user-selectable count rates. 7 6 5 4 3 2 1 - - PPU6 PPU5 PPU4 PPU3 PPU2 PPU1 - - PPD6 PPD5 PPD4 PPD3 PPD2 PPD1 The discharge rate flags, DR2–0, are bits 6–4. 7 - Capacity Inaccurate Count Register (CPI) FLGS2 Bits 5 4 3 DR1 DR0 - 6 DR2 2 - 1 - The read-only CPI register (address=09h) is used to indicate the number of times a battery has been charged without an LMD update. Because the capacity of a rechargeable battery varies with age and operating conditions, the bq2012 adapts to the changing capacity over time. A complete discharge from full (NAC=LMD) to empty (EDV1=1) is required to perform an LMD update assuming there have been no intervening valid charges, the temperature is greater than or equal to 0°C, and the self-discharge counter is less than 4096 counts. 0 They are used to determine the current discharge regime as follows: DR2 DR1 DR0 VSR (V) 0 0 0 VSR > -150mV 0 0 1 VSR < -150mV The CPI register is incremented every time a valid charge is detected if NAC < 0.94 * LMD. When NAC ≥ 0.94 * LMD, the CPI register increments on the first valid charge; CPI does not increment again for a valid charge until NAC is discharged below 0.94 * LMD. This prevents continuous trickle charging from incrementing CPI if self-discharge decrements NAC. The CPI register increments to 255 without rolling over. When the contents of CPI are incremented to 64, the capacity inaccurate flag, CI, is asserted in the FLGS1 register. The CPI register is reset whenever an update of the LMD register is performed, and the CI flag is also cleared. The overload flag (OVLD) is asserted when a discharge overload is detected, VSR < -250mV. OVLD remains asserted as long as the condition persists and is cleared when VSR > -250mV. The overload condition is used to stop sampling of the battery terminal characteristics for end-of-discharge determination. Sampling is re-enabled 0.5 secs after the overload condition is removed. FLGS2 Bits 7 6 5 4 3 2 1 0 - - - - - - - OVLD 14 bq2012 In absolute mode, each segment represents a fixed amount of charge, based on the initial PFC. In absolute mode, each segment represents 20% of the PFC, with the sixth segment representing “overfull” (charge above the PFC). As the battery wears out over time, it is possible for the LMD to be below the initial PFC. In this case, all of the LEDs may not turn on, representing the reduction in the actual battery capacity. Digital Magnitude Filter (DMF) The read-write DMF register (address = 0ah) provides the system with a means to change the default settings of the digital magnitude filter. By writing different values into this register, the limits of VSRD and VSRQ can be adjusted. Note: Care should be taken when writing to this register. A VSRD and VSRQ below the specified VOS may adversely affect the accuracy of the bq2012. Refer to Table 4 for recommended settings for the DMF register. The capacity display is also adjusted for the present battery temperature. The temperature adjustment reflects the available capacity at a given temperature but does not affect the NAC register. The temperature adjustments are detailed in the TMPGG register description. Reset Register (RST) When DISP is tied to VCC, the SEG1–6 outputs are inactive. When DISP is left floating, the display becomes active whenever the NAC registers are counting at a rate equivalent to VSRO < -4mV or VSRO > VSRQ. When pulled low, the segment outputs become active immediately. A capacitor tied to DISP allows the display to remain active for a short period of time after activation by a push-button switch. The reset register (address=39h) provides the means to perform a software-controlled reset of the device. By writing the RST register contents from 00h to 80h, a bq2012 reset is performed. Setting any bit other than the most-significant bit of the RST register is not allowed, and results in improper operation of the bq2012. Resetting the bq2012 sets the following: ■ LMD = PFC ■ CPI, VDQ, NACH, and NACL = 0 ■ CI and BRP = 1 The segment outputs are modulated as two banks of three, with segments 1, 3, and 5 alternating with segments 2, 4, and 6. The segment outputs are modulated at approximately 100Hz with each segment bank active for 30% of the period. Note: NACH = PFC when PROG6 = H. SEG1 blinks at a 4Hz rate whenever VSB has been detected to be below VEDV1 (EDV1 = 1), indicating a lowbattery condition. VSB below VEDVF (EDVF = 1) disables the display output. Display The bq2012 can directly display capacity information using low-power LEDs. If LEDs are used, the program pins should be resistively tied to VCC or VSS for a program high or program low, respectively. Microregulator The bq2012 can operate directly from three or four cells. To facilitate the power supply requirements of the bq2012, an REF output is provided to regulate an external low-threshold n-FET. A micropower source for the bq2012 can be inexpensively built using the FET and an external resistor; see Figure 1. The bq2012 displays the battery charge state in either absolute or relative mode. In relative mode, the battery charge is represented as a percentage of the LMD. Each LED segment represents 20% of the LMD. The sixth segment is not used. 15 bq2012 Absolute Maximum Ratings Symbol Parameter Minimum Maximum Unit Notes VCC Relative to VSS -0.3 7.0 V All other pins Relative to VSS -0.3 7.0 V REF Relative to VSS -0.3 8.5 V Current limited by R1 (see Figure 1) VSR Relative to VSS TOPR Operating temperature Note: -0.3 7.0 V Minimum 100Ω series resistor should be used to protect SR in case of a shorted battery (see the bq2012 application note for details). 0 70 °C Commercial Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to conditions beyond the operational limits for extended periods of time may affect device reliability. DC Voltage Thresholds (TA = TOPR; V = 3.0 to 6.5V) Symbol Parameter Minimum Typical Maximum Unit Notes VEDVF Final empty warning 0.93 0.95 0.97 V SB VEDV1 First empty warning 1.03 1.05 1.07 V SB VSR1 Discharge compensation threshold -120 -150 -180 mV SR, VSR + VOS (see note 2) VORD Overload threshold -230 -250 -280 mV SR, VSR + VOS VSRO SR sense range -300 - +2000 mV SR, VSR + VOS 375 - - µV VSR + VOS (see note 1) - - -300 µV VSR + VOS (see note 1) 2.20 2.25 2.30 V VSRQ Valid charge VSRD Valid discharge VMCV Maximum single-cell voltage VBR Battery removed/replaced Notes: 1. Default value; value set in DMF register. VOS is affected by PC board layout. Proper layout guidelines should be followed for optimal performance. See “LayoutConsiderations.” 2. Proper threshold measurements require VCC to be more than 1.5V greater than the desired signal value. SB - 0.1 0.25 V SB pulled low 2.20 2.25 2.30 V SB pulled high 16 bq2012 DC Electrical Characteristics (TA = TOPR) Symbol Parameter VCC Supply voltage VOS Offset referred to VSR VREF Minimum Typical Maximum Unit Notes VCC excursion from < 2.0V to ≥ 3.0V initializes the unit. 3.0 4.25 6.5 V - ±50 ±150 µV DISP = VCC Reference at 25°C 5.7 6.0 6.3 V IREF = 5µA Reference at -40°C to +85°C 4.5 - 7.5 V IREF = 5µA RREF Reference input impedance 2.0 5.0 - MΩ VREF = 3V - 90 135 µA VCC = 3.0V ICC Normal operation - 120 180 µA VCC = 4.25V - 170 250 µA VCC = 6.5V - - 2.4 V VSB Battery input RSBmax SB input impedance 10 - - MΩ 0 < VSB < VCC IDISP DISP input leakage - - 5 µA VDISP = VSS ILCOM LCOM input leakage -0.2 - 0.2 µA DISP = VCC RDQ Internal pulldown 500 - - KΩ VSR Sense resistor input -0.3 - 2.0 V RSR SR input impedance VIH Logic input high VIL Logic input low VIZ Logic input Z VOLSL 10 - - MΩ VCC - 0.2 - - V VSR < VSS = discharge; VSR > VSS = charge -200mV < VSR < VCC PROG1–PROG6 - - VSS + 0.2 V PROG1–PROG6 float - float V PROG1–PROG6 SEGX output low, low VCC - 0.1 - V VCC = 3V, IOLS ≤ 1.75mA SEG1–SEG6 VOLSH SEGX output low, high VCC - 0.4 - V VCC = 6.5V, IOLS ≤ 11.0mA SEG1–SEG6 VCC = 3V, IOHLCOM = -5.25mA VOHLCL LCOM output high, low VCC VCC - 0.3 - - V VOHLCH LCOM output high, high VCC VCC - 0.6 - - V IIH PROG1-6 input high current - 1.2 - µA IIL PROG1-6 input low current IOHLCOM LCOM source current IOLS SEGX sink current IOL Open-drain sink current VCC = 6.5V, IOHLCOM = -33.0mA VPROG = VCC/2 - 1.2 - µA VPROG = VCC/2 -33 - - mA At VOHLCH = VCC - 0.6V - - 11.0 mA At VOLSH = 0.4V At VOL = VSS + 0.3V DQ, EMPTY, CHG - - 5.0 mA IOL ≤ 5mA, DQ, EMPTY VOL Open-drain output low - - 0.5 V VIHDQ DQ input high 2.5 - - V DQ VILDQ DQ input low - - 0.8 V DQ RPROG Soft pull-up or pull-down resistor value (for programming) - - 200 KΩ PROG1–PROG6 RFLOAT Float state external impedance - 5 - MΩ PROG1–PROG6 Note: All voltages relative to VSS. 17 bq2012 Serial Communication Timing Specification Symbol Parameter Minimum Typical Maximum Unit tCYCH Cycle time, host to bq2012 3 - - ms tCYCB Cycle time, bq2012 to host 3 - 6 ms tSTRH Start hold, host to bq2012 5 - - ns tSTRB Start hold, bq2012 to host 500 - - µs tDSU Data setup - - 750 µs tDH Data hold 750 - - µs tDV Data valid 1.50 - - ms tSSU Stop setup - - 2.25 ms tSH Stop hold 700 - - µs tSV Stop valid 2.95 - - ms tB Break 3 - - ms tBR Break recovery 1 - - ms Note: Notes See note The open-drain DQ pin should be pulled to at least VCC by the host system for proper DQ operation. DQ may be left floating if the serial interface is not used. Serial Communication Timing Illustration DQ (R/W "1") DQ (R/W "0") tSTRH tSTRB tDH tDSU tDV tSH tSSU DQ (BREAK) tSV tCYCH, tCYCB, tB tBR TD201002.eps 18 bq2012 16-Pin SOIC Narrow (SN) 16-Pin SN (0.150" SOIC) Inches D B e E H A C A1 Millimeters Dimension A Min. Max. Min. Max. 0.060 0.070 1.52 1.78 A1 0.004 0.010 0.10 0.25 B 0.013 0.020 0.33 0.51 C 0.007 0.010 0.18 0.25 D 0.385 0.400 9.78 10.16 E 0.150 0.160 3.81 4.06 e 0.045 0.055 1.14 1.40 H 0.225 0.245 5.72 6.22 L 0.015 0.035 0.38 0.89 .004 L Data Sheet Revision History Change No. Page No. 1 7 Note: Description Addition to Table 2 Nature of Change Added bottom row Change 1 = Sept. 1996 B changes from July 1994. Ordering Information bq2012 Temperature Range: blank = Commercial (0 to +70°C) Package Option: SN = 16-pin narrow SOIC Device: bq2012 Gas Gauge IC 19 PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) BQ2012SN-D107 ACTIVE SOIC D 16 40 RoHS & Green NIPDAU Level-2-260C-1 YEAR 0 to 70 2012 D107 Samples BQ2012SN-D107TR ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR 0 to 70 2012 D107 Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of