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BQ24316DSGR

BQ24316DSGR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    WSON-8_2X2MM-EP

  • 描述:

    IC BATT PROTECTION LI-ION 8WSON

  • 数据手册
  • 价格&库存
BQ24316DSGR 数据手册
Sample & Buy Product Folder Tools & Software Technical Documents Support & Community bq24314, bq24316 SLUS763D – JULY 2007 – REVISED APRIL 2016 bq2431x Overvoltage and Overcurrent Protection IC and Li+ Charger Front-End Protection IC 1 Features 3 Description • The bq24314 and bq24316 devices are highly integrated circuits designed to provide protection to Li-ion batteries from failures of the charging circuit. The IC continuously monitors the input voltage, the input current, and the battery voltage. In case of an input overvoltage condition, the IC immediately removes power from the charging circuit by turning off an internal switch. In the case of an overcurrent condition, it limits the system current at the threshold value, and if the overcurrent persists, switches the pass element OFF after a blanking period. Additionally, the IC also monitors its own die temperature and switches off if it becomes too hot. The input overcurrent threshold is userprogrammable. 1 • • • • • • • Provides Protection for Three Variables: – Input Overvoltage, With Rapid Response in < 1 μs – User-Programmable Overcurrent With Current Limiting – Battery Overvoltage 30-V Maximum Input Voltage Supports up to 1.5-A Input Current Robust Against False Triggering Due to Current Transients Thermal Shutdown Enable Input Status Indication – Fault Condition Available in Space-Saving Small 8-Pin 2 × 2 SON and 12-Pin 4 × 3 SON Packages The IC can be controlled by a processor and also provides status information about fault conditions to the host. Device Information 2 Applications • • • • • PART NUMBER Mobile Phones and Smart Phones PDAs MP3 Players Low-Power Handheld Devices Bluetooth™ Headsets bq24314 bq24316 PACKAGE (1) BODY SIZE (NOM) WSON (8) 2.00 mm × 2.00 mm VSON (8) 3.00 mm × 4.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Application Schematic AC Adapter VDC 1 IN OUT 8 1 mF 1 mF GND bq24080 Charger IC bq24316DSG SYSTEM VBAT 6 VSS ILIM FAULT 4 2 7 CE 5 Copyright © 2016 Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. bq24314, bq24316 SLUS763D – JULY 2007 – REVISED APRIL 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 4 4 5 6 7 Absolute Maximum Ratings ..................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Timing Requirements ................................................ Typical Characteristics .............................................. Detailed Description .............................................. 9 7.1 Overview ................................................................... 9 7.2 Functional Block Diagram ......................................... 9 7.3 Feature Description................................................. 10 7.4 Device Functional Modes........................................ 12 8 Applications and Implementation ...................... 14 8.1 Application Information............................................ 14 8.2 Typical Application .................................................. 14 9 Power Supply Recommendations...................... 18 9.1 Powering Accessories............................................. 18 10 Layout................................................................... 19 10.1 Layout Guidelines ................................................. 19 10.2 Layout Example .................................................... 19 11 Device and Documentation Support ................. 20 11.1 11.2 11.3 11.4 11.5 Related Links ........................................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 20 20 20 20 20 12 Mechanical, Packaging, and Orderable Information ........................................................... 20 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision C (October 2007) to Revision D Page • Added Device Information table, ESD Rating table, Thermal Information table, Timing Requirements table, Overview section, Feature Description, Device Functional Modes section, Application and Implementations section, Power Supply Recommendations section, Layout section, Device Documentation Support, and Mechanical, Packaging, and Orderable Information sections ....................................................................................................................................... 1 • Replaced the ORDERING INFORMATION table with the Device Information table ............................................................ 1 Changes from Revision B (September 2007) to Revision C • Page Changed the MARKING column of the ORDERING INFORMATION table .......................................................................... 1 Changes from Revision A (September 2007) to Revision B Page • Changed Electrical Characteristics: operating current typ value from 500 μA to 400 μA ...................................................... 5 • Changed Electrical Characteristics: bq24314 input overvoltage protection threshold min value from 5.67 V to 5.71 V. ..... 5 2 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 bq24314, bq24316 www.ti.com SLUS763D – JULY 2007 – REVISED APRIL 2016 5 Pin Configuration and Functions DSG Package 8-Pin WSON Top View DSJ Package 8-Pin VSON Top View IN 1 8 OUT VSS 2 7 ILIM NC 3 6 VBAT FAULT 4 5 CE Thermal Pad IN 1 12 NC IN 2 11 OUT VSS 3 10 OUT FAULT 4 9 ILIM NC 5 8 VBAT NC 6 7 CE Thermal Pad Pin Functions PIN NAME I/O DESCRIPTION VSON WSON CE 7 5 I Chip enable input. Active low. When CE = High, the input FET is off. Internally pulled down. FAULT 4 4 O Open-drain output, device status. FAULT = Low indicates that the input FET Q1 has been turned off due to input overvoltage, input overcurrent, battery overvoltage, or thermal shutdown. ILIM 9 7 I/O Input overcurrent threshold programming. Connect a resistor to VSS to set the overcurrent threshold. IN 1, 2 1 I NC 5, 6, 12 3 — These pins may have internal circuits used for test purposes. Do not make any external connections at these pins for normal operation. OUT 10, 11 8 O Output terminal to the charging system. Connect external 1-μF ceramic capacitor (minimum) to VSS. Thermal PAD — — — There is an internal electrical connection between the exposed thermal pad and the VSS pin of the device. The thermal pad must be connected to the same potential as the VSS pin on the printed-circuit board. Do not use the thermal pad as the primary ground input for the device. The VSS pin must be connected to ground at all times. VBAT 8 6 I VSS 3 2 — Input power, connect to external DC supply. Connect external 1-μF ceramic capacitor (minimum) to VSS. For the 12-pin (DSJ-suffix) device, ensure that pins 1 and 2 are connected together on the PCB at the device. Battery voltage sense input. Connect to pack positive terminal through a resistor. Ground terminal Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 3 bq24314, bq24316 SLUS763D – JULY 2007 – REVISED APRIL 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) Input voltage MIN MAX IN (with respect to VSS) –0.3 30 OUT (with respect to VSS) –0.3 12 ILIM, FAULT, CE, VBAT (with respect to VSS) –0.3 7 UNIT V Input current IN 2 A Output current OUT 2 A Output sink current FAULT 15 mA Junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the network ground terminal unless otherwise noted. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged device model (CDM), per JEDEC specification JESD22-C101 (2) ±500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX 3.3 26 V Input current, IN pin 1.5 A Output current, OUT pin 1.5 A 15 90 kΩ 0 125 °C VIN Input voltage IIN IOUT RILIM OCP programming resistor TJ Junction temperature UNIT 6.4 Thermal Information bq24314, bq24316 THERMAL METRIC (1) DSG (WSON) DSJ (VSON) 8 PINS 12 PINS UNIT RθJA Junction-to-ambient thermal resistance 58.6 49.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 67.9 60.1 °C/W RθJB Junction-to-board thermal resistance 29.7 24.9 °C/W ψJT Junction-to-top characterization parameter 1.2 2.4 °C/W ψJB Junction-to-board characterization parameter 30.3 24.9 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 7.6 11.9 °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 bq24314, bq24316 www.ti.com SLUS763D – JULY 2007 – REVISED APRIL 2016 6.5 Electrical Characteristics over junction temperature range –40°C to 125°C and recommended supply voltage (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IN UVLO Undervoltage lockout, input power detected threshold CE = Low, VIN increasing from 0 V to 3 V 2.6 2.7 2.8 V VHYS-UVLO Hysteresis on UVLO CE = Low, VIN decreasing from 3 V to 0 V 200 260 300 mV TDGL(PGOOD) Deglitch time, input power detected status CE = Low. Time measured from VIN 0 V → 5 V, 1-µs rise-time, to output turning ON IDD Operating current CE = Low, No load on OUT pin, VIN = 5 V, RILIM = 25 kΩ ISTDBY Standby current CE = High, VIN = 5 V 8 ms 400 600 μA 65 95 μA 170 280 mV 5.71 5.85 6 6.6 6.8 7 25 60 110 mV 1500 mA mA INPUT TO OUTPUT CHARACTERISTICS VDO Drop-out voltage IN to OUT CE = Low, VIN = 5 V, IOUT = 1 A INPUT OVERVOLTAGE PROTECTION VOVP Input overvoltage protection threshold VHYS-OVP Hysteresis on OVP bq24314 CE = Low, VIN increasing from 5 V to 7.5 V bq24316 CE = Low, VIN decreasing from 7.5 V to 5 V V V INPUT OVERCURRENT PROTECTION IOCP Input overcurrent protection threshold range IOCP Input overcurrent protection threshold 300 CE = Low, RILIM = 25 kΩ, 930 1000 1070 BATTERY OVERVOLTAGE PROTECTION BVOVP Battery overvoltage protection threshold CE = Low, VIN > 4.4 V 4.30 4.35 4.4 V VHYS-BOVP Hysteresis on BVOVP CE = Low, VIN > 4.4 V 200 275 320 mV IVBAT Input bias current on VBAT pin DSG Package VBAT = 4.4 V, TJ = 25°C 10 DSJ Package VBAT = 4.4 V, TJ = 85°C 10 nA THERMAL PROTECTION TJ(OFF) Thermal shutdown temperature TJ(OFF-HYS) Thermal shutdown hysteresis 140 150 20 °C °C LOGIC LEVELS ON CE VIL Low-level input voltage 0 0.4 V VIH High-level input voltage IIL Low-level input current VCE = 0 V 1 μA IIH High-level input current VCE = 1.8 V 15 μA 1.4 V LOGIC LEVELS ON FAULT VOL Output low voltage ISINK = 5 mA 0.2 V IHI-Z Leakage current, FAULT pin HI-Z VFAULT = 5 V 10 μA Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 5 bq24314, bq24316 SLUS763D – JULY 2007 – REVISED APRIL 2016 www.ti.com 6.6 Timing Requirements MIN NOM MAX UNIT IN tDGL(PGOOD) CE = Low. Time measured from VIN 0 V → 5 V, 1-μs rise-time, to output turning ON Deglitch time, input power detected status 8 ms INPUT OVERVOLTAGE PROTECTION tPD(OVP) Input OV propagation delay (1) CE = Low tON(OVP) Recovery time from input overvoltage condition CE = Low, Time measured from VIN 7.5 V → 5 V, 1-μs fall-time 1 μs 8 ms 176 μs 64 ms 176 μs INPUT OVERCURRENT PROTECTION tBLANK(OCP) Blanking time, input overcurrent detected tREC(OCP) Recovery time from input overcurrent condition BATTERY OVERVOLTAGE PROTECTION tDGL(BOVP) (1) 6 CE = Low, VIN > 4.4 V. Time measured from VVBAT rising from 4.1 V to 4.4 V to FAULT going low. Deglitch time, battery overvoltage detected Not tested in production. Specified by design. Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 bq24314, bq24316 www.ti.com SLUS763D – JULY 2007 – REVISED APRIL 2016 6.7 Typical Characteristics Test conditions (unless otherwise noted) for typical operating performance: VIN = 5 V, CIN = 1 μF, COUT = 1 μF, RILIM = 25 kΩ, RBAT = 100 kΩ, TA = 25°C, VPU = 3.3 V (see Figure 11 for the Typical Application Circuit) 280 2.75 260 2.7 VIN Increasing 240 VIN = 4 V 220 VDO @ 1A - mV VUVLO, VHYS-UVLO - V 2.65 2.6 2.55 200 VIN = 5 V 180 160 2.5 140 VIN Decreasing 2.45 2.4 -50 120 100 -30 -10 10 30 50 70 Temperature - °C 90 110 0 130 50 100 150 Temperature - °C Figure 1. Undervoltage Lockout vs Free-Air Temperature Figure 2. Dropout Voltage (IN to OUT) vs Free-Air Temperature 5.88 6.82 6.8 5.86 6.78 VOVP, VHYS-OVP - V VOVP, VHYS-OVP - V VIN Increasing 6.76 6.74 5.84 VIN Increasing 5.82 VIN Decreasing 5.8 6.72 6.7 -50 VIN Decreasing -30 -10 10 30 50 70 Temperature - °C 90 110 5.78 -50 130 -30 -10 10 30 50 70 90 110 130 Temperature - °C Figure 3. Overvoltage Threshold Protection (bq24316) vs Free-Air Temperature Figure 4. Overvoltage Threshold Protection (bq24314) vs Free-Air Temperature 985 1600 984 1400 983 1200 982 IOCP - mA IOCP - mA 1000 800 981 980 979 600 978 400 977 200 0 0 976 10 20 30 40 50 60 RILIM - kW 70 80 90 100 Figure 5. Input Overcurrent Protection vs ILIM Resistance 975 -50 -30 -10 10 30 50 70 Temperature - °C 90 110 130 Figure 6. Input Overcurrent Protection vs Free-Air Temperature Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 7 bq24314, bq24316 SLUS763D – JULY 2007 – REVISED APRIL 2016 www.ti.com Typical Characteristics (continued) 4.4 2.5 4.35 BVOVP (VVBAT Increasing) 2 1.5 4.25 IVBAT - nA BVOVP - V 4.3 4.2 1 4.15 0.5 4.1 4.05 -50 Bat-OVP Recovery (VVBAT Decreasing) -30 -10 10 30 50 70 Temperature - °C 90 110 0 -50 130 Figure 7. Battery Overvoltage Protection vs Free-Air Temperature -30 -10 10 30 50 70 Temperature - °C 90 110 130 Figure 8. Leakage Current (VBAT Pin) vs Free-Air Temperature 900 800 IDD (CE = Low) IDD, ISTDBY - mA 700 600 500 400 300 200 ISTDBY (CE = High) 100 0 0 5 10 15 20 25 30 35 VIN - V Figure 9. Supply Current (bq24314) vs Input Voltage 8 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 bq24314, bq24316 www.ti.com SLUS763D – JULY 2007 – REVISED APRIL 2016 7 Detailed Description 7.1 Overview The bq24314 and bq24316 devices monitor the input voltage, input current, and the battery voltage to protect the charging system of a Li-Ion battery. The protection features can be enabled through the /CE pin. When enabled, the system is protected against input overvoltage by turning off an internal switch, immediately removing power from the charging circuit. The system is protected against an overcurrent condition by limiting the input current to a safe value for a blanking duration before disconnecting the input from the output by turning the switch off. The overcurrent threshold is user-programmable. Additionally, the device also monitors its own die temperature and switches off if it becomes too hot. 7.2 Functional Block Diagram Q1 IN Charge Pump, Bandgap, Bias Gen OUT VBG ISNS ILIM Current limiting loop ILIMREF OFF OCP comparator ILIMREF - Δ t BLANK(OCP) ISNS FAULT VIN VBG COUNTERS, CONTROL, AND STATUS OVP VIN CE VBG t DGL(PGOOD) UVLO VBAT THERMAL SHUTDOW VSS VBG t DGL(BOVP) Copyright © 2016 Texas Instruments Incorporated Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 9 bq24314, bq24316 SLUS763D – JULY 2007 – REVISED APRIL 2016 www.ti.com 7.3 Feature Description 7.3.1 Power Down The device remains in power-down mode when the input voltage at the IN pin is below the undervoltage threshold VUVLO. The FET Q1 connected between IN and OUT pins is off, and the status output, FAULT, is set to Hi-Z. 7.3.2 Power-On Reset The device resets when the input voltage at the IN pin exceeds the UVLO threshold. All internal counters and other circuit blocks are reset. The IC then waits for duration tDGL(PGOOD) for the input voltage to stabilize. If, after tDGL(PGOOD), the input voltage and battery voltage are safe, FET Q1 is turned ON. The IC has a soft-start feature to control the inrush current. The soft-start minimizes the ringing at the input (the ringing occurs because the parasitic inductance of the adapter cable and the input bypass capacitor form a resonant circuit). Figure 12 shows the power-up behavior of the device. Because of the deglitch time at power-on, if the input voltage rises rapidly to beyond the OVP threshold, the device will not switch on at all, instead it will go into protection mode and indicate a fault on the FAULT pin, as shown in Figure 13. 7.3.3 Operation The device continuously monitors the input voltage, the input current, and the battery voltage as described in detail in the following sections. 7.3.3.1 Input Overvoltage Protection If the input voltage rises above VOVP, the internal FET Q1 is turned off, removing power from the circuit. As shown in Figure 14 to Figure 17, the response is very rapid, with the FET turning off in less than a microsecond. The FAULT pin is driven low. When the input voltage returns below VOVP – VHYS-OVP (but is still above VUVLO), the FET Q1 is turned on again after a deglitch time of tON(OVP) to ensure that the input supply has stabilized. Figure 18 shows the recovery from input OVP. 7.3.3.2 Input Overcurrent Protection The overcurrent threshold is programmed by a resistor RILIM connected from the ILIM pin to VSS. Figure 5 shows the OCP threshold as a function of RILIM, and may be approximated by Equation 1: IOCP = 25 ÷ RILIM where • • current is in A and resistance is in kΩ (1) If the load current tries to exceed the IOCP threshold, the device limits the current for a blanking duration of tBLANK(OCP). If the load current returns to less than IOCP before tBLANK(OCP) times out, the device continues to operate. However, if the overcurrent situation persists for tBLANK(OCP), the FET Q1 is turned off for a duration of tREC(OCP), and the FAULT pin is driven low. The FET is then turned on again after tREC(OCP) and the current is monitored all over again. Each time an OCP fault occurs, an internal counter is incremented. If 15 OCP faults occur in one charge cycle, the FET is turned off permanently. The counter is cleared either by removing and reapplying input power, or by disabling and re-enabling the device with the CE pin. Figure 19 to Figure 21 show what happens in an overcurrent fault. To prevent the input voltage from spiking up due to the inductance of the input cable, Q1 is turned off slowly, resulting in a soft-stop, as shown in Figure 21. 7.3.3.3 Battery Overvoltage Protection The battery overvoltage threshold BVOVP is internally set to 4.35 V. If the battery voltage exceeds the BVOVP threshold, the FET Q1 is turned off, and the FAULT pin is driven low. The FET is turned back on once the battery voltage drops to BVOVP – VHYS-BOVP (see Figure 22 and Figure 23). Each time a battery overvoltage fault occurs, an internal counter is incremented. If 15 such faults occur in one charge cycle, the FET is turned off permanently. The counter is cleared either by removing and re-applying input power, or by disabling and re-enabling the device with the CE pin. In the case of a battery overvoltage fault, Q1 is switched OFF gradually (see Figure 22). 10 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 bq24314, bq24316 www.ti.com SLUS763D – JULY 2007 – REVISED APRIL 2016 Feature Description (continued) 7.3.3.4 Thermal Protection If the junction temperature of the device exceeds TJ(OFF), the FET Q1 is turned off, and the FAULT pin is driven low. The FET is turned back on when the junction temperature falls below TJ(OFF) – TJ(OFF-HYS). 7.3.3.5 Enable Function The IC has an enable pin which can be used to enable or disable the device. When the CE pin is driven high, the internal FET is turned off. When the CE pin is low, the FET is turned on if other conditions are safe. The OCP counter and the Bat-OVP counter are both reset when the device is disabled and re-enabled. The CE pin has an internal pulldown resistor and can be left floating. NOTE The FAULT pin functionality is also disabled when the CE pin is high. 7.3.3.6 Fault Indication The FAULT pin is an active-low open-drain output. It is in a high-impedance state when operating conditions are safe, or when the device is disabled by setting CE high. With CE low, the FAULT pin goes low whenever any of these events occurs: • Input overvoltage • Input overcurrent • Battery overvoltage • IC Overtemperature Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 11 bq24314, bq24316 SLUS763D – JULY 2007 – REVISED APRIL 2016 www.ti.com Feature Description (continued) Power Down All IC functions OFF FAULT = HiZ V(IN) > V(UVLO) ? Any State if V(IN) < V (UVLO), go to Power Down No Any State if CE = Hi, go to Reset Yes Reset Timers reset Counters reset FAULT = HiZ FET off No CE = Low ? V(IN) < V(OVP) ? No Turn off FET FAULT = Low No CE = Hi ? Yes Go to Reset Yes No I < IOCP ? No Turn off FET FAULT = Low Incr OCP counter Wait tREC(OCP) count VUVLO – VHYS-UVLO + RDSON × IACCESSORY. Within this voltage range, the reverse current capability is the same as the forward capability, 1.5 A. NOTE There is no overcurrent protection in this direction. 18 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 bq24314, bq24316 www.ti.com SLUS763D – JULY 2007 – REVISED APRIL 2016 Powering Accessories (continued) IN Q1 OUT VOUT Charge Pump, Bandgap, Bias Gen Figure 26. Powering an Accessory – Internal Power Path 10 Layout 10.1 Layout Guidelines • • • This device is a protection device, and is meant to protect down-stream circuitry from hazardous voltages. Potentially, high voltages may be applied to this IC. It has to be ensured that the edge-to-edge clearances of PCB traces satisfy the design rules for high voltages. The device uses SON packages with a PowerPAD™. For good thermal performance, the PowerPAD must be thermally coupled with the PCB ground plane. In most applications, this will require a copper pad directly under the IC. This copper pad must be connected to the ground plane with an array of thermal vias. CIN and COUT must be located close to the IC. Other components like RILIM and RBAT should also be located close to the IC. 10.2 Layout Example VBAT VIN GND GND BAT+ GND VOUT To GATE of FET Figure 27. Recommended Layout Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 19 bq24314, bq24316 SLUS763D – JULY 2007 – REVISED APRIL 2016 www.ti.com 11 Device and Documentation Support 11.1 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 2. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY bq24314 Click here Click here Click here Click here Click here bq24316 Click here Click here Click here Click here Click here 11.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.3 Trademarks PowerPAD, E2E are trademarks of Texas Instruments. Bluetooth is a trademark of Bluetooth SIG, Inc. All other trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 20 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: bq24314 bq24316 PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) BQ24314DSGR ACTIVE WSON DSG 8 3000 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR -40 to 85 CBV Samples BQ24314DSGT ACTIVE WSON DSG 8 250 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR -40 to 85 CBV Samples BQ24316DSGR ACTIVE WSON DSG 8 3000 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR -40 to 85 CBW Samples BQ24316DSGT ACTIVE WSON DSG 8 250 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR -40 to 85 CBW Samples BQ24316DSJR ACTIVE VSON DSJ 12 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 BZC Samples BQ24316DSJT ACTIVE VSON DSJ 12 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 BZC Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
BQ24316DSGR 价格&库存

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BQ24316DSGR
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    • 1000+2.53000

    库存:82450