BQ29415PWG4

Not Recommended for New Designs bq29410, bq29411, bq29412 bq29413, bq29414 bq29415, bq29419 www.ti.com SLUS669G – AUGUST 2005 – REVISED AUGUST 2008 VOLTAGE PROTECTION FOR 2-, 3-, OR 4-CELL Li-Ion BATTERIES (2nd-LEVEL PROTECTION) Check for Samples: bq29410, bq29411, bq29412, bq29413, bq29414, bq29415, bq29419 FEATURES DESCRIPTION • • The bq2941x is a secondary overvoltage protection IC for 2-, 3-, or 4-cell lithium-ion battery packs that incorporates a high-accuracy precision overvoltage detection circuit. It includes a programmable delay circuit for overvoltage detection time. 1 • • • • 2-, 3-, or 4-Cell Secondary Protection Low Power Consumption ICC < 2 µA [VCELL(ALL) < V(PROTECT)] Fixed High Accuracy Overvoltage Protection Threshold – bq29410 = 4.35 V – bq29411 = 4.40 V – bq29412 = 4.45 V – bq29413 = 4.50 V – bq29414 = 4.55 V – bq29415 = 4.60 V – bq29419 = 4.30 V Programmable Delay Time of Detection High Power Supply Ripple Rejection Stable During Pulse Charge Operation APPLICATIONS • nd 2 -Level Overvoltage Protection in Li-Ion Battery Packs in: – Notebook Computers – Portable Instrumentation – Portable Equipment FUNCTION Each cell in a multiple-cell pack is compared to an internal reference voltage. If one cell reaches an overvoltage condition, the protection sequence begins. The bq2941x device starts charging an external capacitor through the CD pin. When the CD pin voltage reaches 1.2 V, the OUT pin changes from a low level to a high level. DCT PACKAGE (TOP VIEW) OUT VDD CD 1 8 2 7 3 6 VC1 VC2 VC3 VC4 4 5 GND PW PACKAGE (TOP VIEW) VC1 VC2 VC3 GND 1 2 3 4 8 7 6 5 OUT VDD CD VC4 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2005–2008, Texas Instruments Incorporated bq29410, bq29411, bq29412 bq29413, bq29414 bq29415, bq29419 Not Recommended for New Designs SLUS669G – AUGUST 2005 – REVISED AUGUST 2008 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION (1) TA V(PROTECT) PACKAGE (3) (2) MSOP (DCT) SYMBOL bq29419DCTR 4.30 V bq29419DCTT SSOP (PW) CJQ bq29419PWG4 bq29419PWRG4 CJG bq29410PW bq29410PWG4 bq29410PWR bq29410PWRG4 CJH bq29411PW bq29411PWG4 bq29411PWR bq29411PWRG4 CJJ bq29412PW bq29412PWG4 bq29412PWR bq29412PWRG4 CJk bq29413PW bq29413PWR CJL bq29414PW bq29414PWR CJM bq29415PW bq29415PWR bq29410DCT3R 4.35 V bq29410DCTR bq29410DCTT bq29411DCT3R 4.40 V bq29411DCTR bq29411DCTT –40°C to 110°C bq29412DCT3R 4.45 V bq29412DCTR bq29412DCTT 4.50 V 4.55 V 4.60 V (1) (2) (3) bq29413DCTR bq29413DCTT bq29414DCTR bq29414DCTT bq29415DCTR bq29415DCTT For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. Contact your local Texas Instruments representative or sales office for alternative overvoltage threshold options. The "R" suffix indicates tape-and-reel packaging. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted (1) (2) UNIT Supply voltage range Input voltage range Output voltage range VDD –0.3 V to 28 V VC1, VC2, VC3, VC4 –0.3 V to 28 V VC1 TO VC2, VC2 TO VC3, VC3 TO VC4, VC4 TO GND –0.3 V to 8 V OUT –0.3 V to 28 V CD –0.3 V to 28 V Continuous total power dissipation See Dissipation Rating Table Storage temperature range, Tstg –65°C to 150°C Lead temperature (soldering, 10 s) (1) (2) 300°C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to ground of this device except the differential voltage of VC1-VC2, VC2-VC3, VC3-VC4, and VC4-GND. PACKAGE DISSIPATION RATINGS 2 PACKAGE TA = 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING DCT 412 mW 3.3 mW/°C 264 mW 214 mW PW 525 mW 4.2 mW/°C 336 mW 273 mW Submit Documentation Feedback Copyright © 2005–2008, Texas Instruments Incorporated Product Folder Links: bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419 Not Recommended for New Designs www.ti.com bq29410, bq29411, bq29412 bq29413, bq29414 bq29415, bq29419 SLUS669G – AUGUST 2005 – REVISED AUGUST 2008 RECOMMENDED OPERATING CONDITIONS MIN VDD Supply voltage NOM MAX 4 25 VC1, VC2, VC3, VC4 0 25 VCn – VC (n=1), (n=1, 2, 3), VC4 – GND 0 5 UNIT V VI Input voltage range td(CD) Delay time capacitance RIN Voltage-monitor filter resistance 100 1k Ω CIN Voltage-monitor filter capacitance 0.01 0.1 µF RVD Supply-voltage filter resistance CVD Supply-voltage filter capacitance TA Operating ambient temperature range 0.22 V µF 0 1 0.1 kΩ µF –40 110 °C ELECTRICAL CHARACTERISTICS over recommended operating free-air temperature range, TA = 25°C (unless otherwise noted) PARAMETER V(OA) Overvoltage detection accuracy TEST CONDITION MIN NOM MAX TA = 25°C 25 35 TA = –20°C to 85°C 25 50 TA = –40°C to 110°C V(PROTECT) Overvoltage detection voltage 4.35 bq29411 4.40 bq29412 4.45 bq29413 4.50 bq29414 4.55 bq29415 4.60 bq29419 4.30 bq29410/11/12/13/14/15 IIN Input current V2, V3 , VC4 input ,VDD = VC1 VC1 = VC2 = VC3 = VC4 = 3.5 V (see Figure 1) tD1 Overvoltage detection delay time VDD = VC1, CD = 0.22 µF 1 1.5 I(CD_dis) CD GND clamp current VDD = VC1, CD = 1 V 5 12 V(OUT) OUT pin drive voltage bq29419 250 320 VDD = VC1, VC1–VC2 = VC2–VC3 = VC3–VC4 = VC4–GND = 3.5 V (see Figure 1) 2 VDD = VC1, VC1–VC2 = VC2–VC3 = VC3–VC4 = VC4–GND = 2.3 V (see Figure 1) 1.5 450 mV 0.3 µA 2 S µA 3 µA VC1–VC2 = VC2–VC3 = VC3–VC4 = VC4–GND = V(PROTECT)Max, VDD = 14 V, IOH = 0 mA 2.5 7 V VC1 = VC2 = VC3 = VC4 = V(PROTECT)Max, VDD = 4.3 V, TA = 0°C to 70°C, IOH = 40 μA 1.5 IOH High-level output current OUT = 3 V, VC1–VC2 = VC2–VC3 = VC3–VC4 = VC4–GND = V(PROTECT)Max, VDD = 14 V IOL Low-level output current OUT = 0.1 V, VDD = VC1, VC1–VC2 = VC2–VC3 = VC3–VC4 = VC4–GND = 3.5 V Copyright © 2005–2008, Texas Instruments Incorporated V 320 Overvoltage detection hysteresis Supply current mV 80 bq29410 Vhys ICC UNIT 2 2.5 –1 5 Submit Documentation Feedback Product Folder Links: bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419 mA µA 3 Not Recommended for New Designs bq29410, bq29411, bq29412 bq29413, bq29414 bq29415, bq29419 SLUS669G – AUGUST 2005 – REVISED AUGUST 2008 www.ti.com 1 OUT VC1 VC1 8 2 VDD VC2 VC2 8 7 3 CD VC3 VC3 6 4 VC4 GND GND 5 Figure 1. ICC, IIN Measurement (DCT Package) Terminal Functions TERMINAL 4 DESCRIPTION MSOP (DCT) TSSOP (PW) NAME 8 1 VC1 Sense voltage input for most positive cell 7 2 VC2 Sense voltage input for second most positive cell 6 3 VC3 Sense voltage input for third most positive cell 5 4 GND Ground pin 4 5 VC4 Sense voltage input for least positive cell 3 6 CD An external capacitor is connected to determine the programmable delay time 2 7 VDD Power supply 1 8 OUT Output Submit Documentation Feedback Copyright © 2005–2008, Texas Instruments Incorporated Product Folder Links: bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419 Not Recommended for New Designs www.ti.com bq29410, bq29411, bq29412 bq29413, bq29414 bq29415, bq29419 SLUS669G – AUGUST 2005 – REVISED AUGUST 2008 FUNCTIONAL BLOCK DIAGRAM RVD CVD VDD VC1 RIN ICD = 0.2 A (TYP) CIN RIN VC2 CIN VC3 OUT RIN CIN VC4 1.2 V (TYP) RIN CIN GND CD C(DELAY) OVERVOLTAGE PROTECTION When one of the cell voltages exceeds V(PROTECT), an internal current source begins to charge the capacitor, C(DELAY), connected to the CD pin. If the voltage at the CD pin, VCD, reaches 1.2 V, the OUT pin is activated and transitions high. An externally connected NCH FET is activiated and blows the external fuse in the positive battery rail; see the functional block diagram. If all cell voltages fall below V(PROTECT) before the voltage at pin CD reaches 1.2 V, the delay time does not run out. An internal switch clamps the CD pin to GND and discharges the capacitor, C(DELAY), and secures the full delay time for the next occurring overvoltage event. Once the pin OUT is activated, it transitions back from high to low after all battery cells reach V(PROTECT) – Vhys. DELAY TIME CALCULATION The delay time is calculated as follows: t + d C ƪ1.2 V (DELAY) C I + (DELAY) ƫ CD ƪtd I ƫ CD 1.2 V Where I(CD) = CD current source = 0.18 µA Copyright © 2005–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419 5 bq29410, bq29411, bq29412 bq29413, bq29414 bq29415, bq29419 Not Recommended for New Designs SLUS669G – AUGUST 2005 – REVISED AUGUST 2008 www.ti.com V(PROTECT) V(PROTECT) - Vhys Cell Voltage (VCn - VC(n-1), VC4 - GND) 1.2 V CD tDELAY OUT td = (1.2 V x CDELAY)/ICD Figure 2. Timing for Overvoltage Sensing APPLICATION INFORMATION BATTERY CONNECTIONS The following diagrams show the DCT package device in different cell configurations. 1 OUT VC1 8 1 OUT VC1 8 2 VDD VC2 8 7 2 VDD 7 VC2 8 3 CD VC3 6 3 CD 2 VC3 6 4 VC4 GND 5 4 VC4 2 GND 5 Figure 3. 4-Series Cell Configuration 6 Submit Documentation Feedback Figure 4. 3-Series Cell Configuration (Connect together VC1 and VC2) Copyright © 2005–2008, Texas Instruments Incorporated Product Folder Links: bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419 Not Recommended for New Designs www.ti.com bq29410, bq29411, bq29412 bq29413, bq29414 bq29415, bq29419 SLUS669G – AUGUST 2005 – REVISED AUGUST 2008 1 OUT VC1 8 2 VDD VC2 77 36 CD VC3 6 4 VC4 GND 5 Figure 5. 2-Series Cell Configuration CELL CONNECTIONS To prevent incorrect output activation, the following connection sequences must be used. 4-Series Cell Configuration • VC1(=VDD) → VC2 → VC3 → VC4 → GND or • GND → VC4 → VC3 → VC2 → VC1(=VDD) 3-Series Cell Configuration • VC1(=VC2=VDD) → VC3 → VC4 → GND or • GND → VC4 → VC3 → VC1(=VC2=VDD) 2-Series Cell Configuration • VC1(=VC2=VC3=VDD) → VC4 → GND or • GND → VC4 → VC1(=VC2=VC3=VDD) Copyright © 2005–2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: bq29410 bq29411 bq29412 bq29413 bq29414 bq29415 bq29419 7 PACKAGE OPTION ADDENDUM www.ti.com 23-Aug-2017 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) BQ29410DCT3R NRND SM8 DCT 8 3000 Pb-Free (RoHS) CU SNBI Level-1-260C-UNLIM -40 to 110 CJG W BQ29410DCT3RE6 NRND SM8 DCT 8 3000 Pb-Free (RoHS) CU SNBI Level-1-260C-UNLIM -40 to 110 CJG W BQ29410DCTR NRND SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJG W BQ29410DCTRG4 NRND SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJG W BQ29410DCTT NRND SM8 DCT 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJG W BQ29410DCTTG4 NRND SM8 DCT 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJG W BQ29410PW NRND TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 29410 BQ29410PWR NRND TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 29410 BQ29410PWRG4 NRND TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 110 29410 BQ29411DCT3R NRND SM8 DCT 8 3000 Pb-Free (RoHS) CU SNBI Level-1-260C-UNLIM -40 to 110 CJH W BQ29411DCTR NRND SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJH W BQ29411DCTRG4 NRND SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJH W BQ29411DCTT NRND SM8 DCT 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJH W BQ29411PW NRND TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 29411 BQ29411PWRG4 NRND TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 110 29411 BQ29412DCT3R NRND SM8 DCT 8 3000 Pb-Free (RoHS) CU SNBI Level-1-260C-UNLIM -40 to 110 CJJ W BQ29412DCT3RE6 NRND SM8 DCT 8 3000 Pb-Free (RoHS) CU SNBI Level-1-260C-UNLIM -40 to 110 CJJ W Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 23-Aug-2017 Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) BQ29412DCTR NRND SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJJ W BQ29412DCTRG4 NRND SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJJ W BQ29412DCTT NRND SM8 DCT 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJJ W BQ29412DCTTG4 NRND SM8 DCT 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJJ W BQ29412PW NRND TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 29412 BQ29412PWR NRND TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 29412 BQ29412PWRG4 NRND TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 29412 BQ29413DCTR NRND SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJK W BQ29413DCTRG4 NRND SM8 DCT 8 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJK W BQ29413DCTT NRND SM8 DCT 8 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 110 CJK W BQ29413PWR NRND TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 110 29413 BQ29415PWR NRND TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 110 2915 BQ29419PW NRND TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 110 29419 BQ29419PWG4 NRND TSSOP PW 8 150 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 110 29419 BQ29419PWR NRND TSSOP PW 8 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 110 29419 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. Addendum-Page 2 Samples PACKAGE OPTION ADDENDUM www.ti.com 23-Aug-2017 (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of