0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BQ294624DRVT

BQ294624DRVT

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    WSON-6_2X2MM-EP

  • 描述:

    IC BATT PROT LI-ION 1CELL 6WSON

  • 数据手册
  • 价格&库存
BQ294624DRVT 数据手册
BQ2946 SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 BQ2946xx Single-Cell Protector for Li-Ion Batteries 1 Features 3 Description • The BQ2946xx family of products is a secondary-level overvoltage monitor and protector for Li-Ion battery pack systems. The cell is monitored for overvoltage condition and triggers an internal counter once the OVP threshold is exceeded; after a fixed set delay, the out is transitioned to a high level. The output is reset (goes low) if the cell voltage drops below the set threshold minus the hysteresis. • • • • • • • Single-Cell Overvoltage Monitor for Secondary Protection Fixed Programmable Delay Timer Fixed Overvoltage Protection (OVP) Threshold – Available Range of 3.85 V to 4.6 V Fixed OVP Delay Option: 4 s or 6.5 s High-Accuracy OVP: ± 10 mV Low Power Consumption ICC ≈ 1 µA (VCELL(ALL) < VPROTECT) Low Leakage Current per Cell Input < 100 nA Small Package Footprint – 6-Pin SON Device Information PART NUMBER(1) BODY SIZE (NOM) SON (6) 2.00 mm × 2.00 mm BQ294602 BQ294604 BQ294624 2 Applications • PACKAGE BQ294682 Second-level protection in Li-ion battery packs in: – Tablets – Slates – Portable equipment and instrumentation (1) For all available packages, see the orderable addendum at the end of the data sheet. Pack + RVD NC OUT V1 VDD VSS VSS RIN VCELL CVD CIN Pack – Simplified Schematic An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Device Options................................................................ 3 6 Pin Configuration and Functions...................................3 7 Specifications.................................................................. 4 7.1 Absolute Maximum Ratings........................................ 4 7.2 ESD Ratings............................................................... 4 7.3 Recommended Operating Conditions.........................4 7.4 Thermal Information....................................................4 7.5 Electrical Characteristics.............................................5 7.6 Typical Characteristics................................................ 6 8 Detailed Description........................................................7 8.1 Overview..................................................................... 7 8.2 Functional Block Diagram........................................... 7 8.3 Feature Description.....................................................7 8.4 Device Functional Modes............................................8 9 Layout.............................................................................12 9.1 Layout Guidelines..................................................... 12 9.2 Layout Example........................................................ 12 10 Device and Documentation Support..........................13 10.1 Third-Party Products Disclaimer............................. 13 10.2 Receiving Notification of Documentation Updates..13 10.3 Support Resources................................................. 13 10.4 Trademarks............................................................. 13 10.5 Electrostatic Discharge Caution..............................13 10.6 Glossary..................................................................13 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (April 2017) to Revision E (April 2021) Page • Removed PRODUCT PREVIEW devices ..........................................................................................................3 Changes from Revision C (July 2015) to Revision D (April 2017) Page • Added BQ294624 in Device Information ........................................................................................................... 1 • Added Receiving Notification of Documentation Updates section....................................................................13 2 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 5 Device Options TA –40°C to +110°C PART NUMBER OVP (V) DELAY TIME (s) BQ294602 4.35 4 BQ294604 4.35 6.5 BQ294624 4.45 6.5 BQ294682 4.225 4 6 Pin Configuration and Functions NC 1 6 OUT V1 2 5 VDD VSS 3 4 VSS Figure 6-1. DRV Package 6-Pin SON Top View Table 6-1. Pin Functions PIN NAME NO. I/O DESCRIPTION NC 1 — No connection OUT 6 OA Output drive for external N-channel FET. Thermal Pad — VSS pin to be connected to the PWRPAD on the printed-circuit-board (PCB) for proper operation. V1 2 IA Sense input for positive voltage of the cell. VSS 3 P Electrically connected to IC ground and negative terminal of the cell. VSS 4 P Electrically connected to IC ground and negative terminal of the cell. VDD 5 P Power supply PWRPAD Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 3 BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT VDD–VSS –0.3 30 V Input voltage V1–VSS –0.3 8 V Output voltage OUT–VSS –0.3 30 V Supply voltage Continuous total power dissipation, PTOT See Section 7.4 Functional temperature –65 110 °C 300 °C –65 150 °C Lead temperature (soldering, 10 s), TSOLDER Storage temperature, Tstg (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) UNIT ±2000 Charged device model (CDM), per JEDEC specification JESD22-C101(2) V ±500 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) Supply voltage, VDD (1) Input voltage V1–VSS Operating ambient temperature, TA (1) MIN MAX 3 8 UNIT V 0 5 V –40 110 °C See Section 9.2. 7.4 Thermal Information BQ2946xx THERMAL METRIC(1) DRV (SON) UNIT 6 PINS RθJA Junction-to-ambient thermal resistance 186.4 °C/W RθJC(top) Junction-to-case(top) thermal resistance 90.4 °C/W RθJB Junction-to-board thermal resistance 110.7 °C/W ψJT Junction-to-top characterization parameter 96.7 °C/W ψJB Junction-to-board characterization parameter 90 °C/W RθJC(bot) Junction-to-case(bottom) thermal resistance n/a °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 7.5 Electrical Characteristics Typical values stated where TA = 25°C and VDD = 4 V, MIN/MAX values stated where TA = –40°C to +110°C and VDD = 4 V (unless otherwise noted) TEST NO. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOLTAGE PROTECTION THRESHOLD VCx 1.0 BQ294602, fixed delay 4 s, V1 > VOV 4.35 1.1 BQ294604, fixed delay 6.5 s, V1 > VOV 4.35 BQ294622, fixed delay 4 s, V1 > VOV (2) 4.45 BQ294624, fixed delay 6.5 s, V1 > VOV 4.45 1.2 1.3 VOV V(PROTECT) – Overvoltage Detection 1.4 BQ294682, fixed delay 4 s, V1 > VOV 4.225 1.5 BQ294684, fixed delay 6.5 s, V1 > VOV (2) 4.225 1.6 VHYS Overvoltage Detection Hysteresis 1.7 VOA OV Detection Accuracy TA = 25°C VOA –DRIFT TA = –40°C OV Detection Accuracy TA = 0°C due to Temperature TA = 60°C TA = 110°C 1.8 250 300 V 400 V –10 10 mV –40 –20 –24 –54 44 20 24 54 mV SUPPLY AND LEAKAGE CURRENT 1.9 ICC Supply Current (V1–VSS) = 4.0 V (see Figure 8-3 for reference) 1 (V1–VSS) = 2.8 V with TA = –40°C to +60°C 1.10 IIN Input Current at V1 Pins Measured at V1 = 4.0 V (V1–VSS) = 4.0 V TA = 0°C to 60°C (see Figure 8-3 for reference) 2 µA 1.25 –0.1 0.1 µA OUTPUT DRIVE OUT 1.11 1.12 VOUT Output Drive Voltage 1.13 (V1–VSS) > VOV VDD = V1, IOH = 100 µA, TA = –40°C to +110°C 3 VDD – 0.3 V (V1–VSS) < VOV, IOL = 100 µA, TA = 25°C TA = –40°C to +110°C 250 400 mV 1.5 3 mA 2 5 kΩ 1.14 IOUT(Short) OUT Short Circuit Current OUT = 0 V, (V1–VSS) > VOV 1.15 tR Output Rise Time CL = 1 nF, VOH(OUT) = 0 V to 5 V(1) 1.16 ZO Output Impedance 5 µs FIXED DELAY TIMER 1.17 tDELAY Fault Detection Delay Time 1.18 tDELAY_CTM Fault Detection Delay Time in Test Mode (1) (2) Fixed Delay, BQ2946x2 3.2 4 4.8 Fixed Delay, BQ2946x4 5.2 6.5 7.8 Fixed Delay (Internal settings) 15 s ms Specified by design. Not 100% tested in production. Product Preview only. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 5 BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 7.6 Typical Characteristics 1.3 4.38 4.37 Overvoltage Threshold (V) ICC Current (PA) 1.2 1.1 1 0.9 0.8 0.7 -40 Min Max Mean 4.36 4.35 4.34 4.33 4.32 -20 0 20 40 60 Temperature (qC) 80 100 4.31 -40 120 D001 Figure 7-1. ICC Current Consumption vs Temperature -20 0 20 40 60 Temperature (qC) 80 100 120 D002 Figure 7-2. BQ294602 Overvoltage Threshold (OVT) vs Temperature 325 -3.85 324 -3.9 Output Current (mA) Hysteresis (mV) 323 322 321 320 319 318 -3.95 -4 -4.05 317 316 315 -40 -20 0 20 40 60 Temperature (qC) 80 100 120 D003 Figure 7-3. Hysteresis VHYS vs Temperature 6 -4.1 -40 -20 0 20 40 60 Temperature (qC) 80 100 120 D004 Figure 7-4. Output Current IOUT vs Temperature Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 8 Detailed Description 8.1 Overview The BQ2946xx is a second-level overvoltage (OV) protector for a single cell. The cell voltage is compared to a protection voltage threshold, VOV. The protection threshold is preprogrammed at the factory with a range from 3.85 V to 4.65 V. When the OVP is triggered, the OUT pin goes high to activate an external N-channel FET, which conducts a low-impedance path to blow a fuse. 8.2 Functional Block Diagram PACK + R VD CVD VDD REG Enable Monitoring V1 RIN CIN VSS INT_EN VOV Delay Timer OSC OUT PWRPAD PACK – 8.3 Feature Description Cell Voltage (V) V1–VSS) The method of overvoltage detection is comparing the cell voltage to an OVP threshold voltage VOV. Once the cell voltage exceeds the programmed fixed value VOV, the delay timer circuit is activated. This delay (tDELAY) is fixed for 4 seconds for the BQ294602 device. When these conditions are satisfied, the OUT terminal is transitioned to a high level. This output (OUT) is released to a low condition if the cell input (V1) is below the OVP threshold minus the VHYS. VOV VOV – VHYS t DELAY OUT (V) Figure 8-1. Timing for Overvoltage Sensing 8.3.1 Sense Positive Input for V1 This is an input to sense single battery cell voltage. A series resistor and a capacitor across the cell is required for noise filtering and stable voltage monitoring. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 7 BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 8.3.2 Output Drive, OUT The gate of an external N-channel MOSFET is connected to this terminal. This output transitions to a high level when an overvoltage condition is detected and after the programmed delay timer. The OUT will reset to a low level if the cell voltage falls below the VOV threshold before the fixed delay timer expires. 8.3.3 Supply Input, VDD This terminal is the unregulated input power source for the IC. A series resistor is connected to limit the current, and a capacitor is connected to ground for noise filtering. 8.3.4 Thermal Pad, PWRPAD For correct operation, the power pad (PWRPAD) is connected to the VSS terminal on the PCB. 8.4 Device Functional Modes 8.4.1 NORMAL Mode When the cell voltage is below the overvoltage threshold, VOV, the device operates in NORMAL mode. The OUT pin is inactive and is low. 8.4.2 OVERVOLTAGE Mode OVERVOLTAGE mode is detected if the cell voltage exceeds the overvoltage threshold, VOV, for configured OV delay time. The OUT pin is activated, internally pulled high, after a delay time, tDELAY. An external FET then turns on, shorting the fuse to ground, which allows the battery and/or charger power to blow the fuse. When the cell voltages fall below (VOV – VHYS), the device returns to NORMAL mode. 8.4.3 Customer Test Mode Customer Test Mode (CTM) helps reduce test time for checking the overvoltage delay timer parameter once the circuit is implemented in the battery pack. To enter CTM, VDD should be set to at least 10 V higher than V1 (see Figure 8-2). The delay timer is greater than 10 ms, but considerably shorter than the timer delay in normal operation. To exit CTM, remove the VDD to V1 voltage differential of 10 V so that the decrease in this value automatically causes an exit. CAUTION Avoid exceeding any Absolute Maximum Voltages on any pins when placing the part into CTM. Also avoid exceeding Absolute Maximum Voltage for the cell voltage (V1–VSS). Stressing the pins beyond the rated limits may cause permanent damage to the device. Figure 8-2 shows the timing for the CTM. VDD – Test Pin (V1) = 10 V VDD Test Pin (V1) OUT (V) t DELAY > 10 ms Figure 8-2. Timing for Customer Test Mode Figure 8-3 shows the measurement for current consumption for the product for both VDD and Vx. 8 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 bq2946xx IIN 1 NC OUT 6 2 V1 VDD 5 3 VSS ICC VSS 4 PWRPAD 3.6 V Figure 8-3. Configuration for IC Current Consumption Test Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 9 BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The BQ2946xx devices are a family of second-level protectors used for overvoltage protection of the single-cell battery pack in the application. The OUT pin drives a NMOS FET that connects the fuse to ground in the event of a fault condition. This provides a shorted path to use the battery and/or charger power to blow the fuse and cut the power path. 9.1.1 Application Configuration Changes to the ranges stated in Table 9-1 may impact the accuracy of the cell measurements. Figure 9-1 shows each external component. 9.1.2 Note Connect VSS (pins 3 and 4) externally to the CELL– terminal. 9.2 Typical Application Pack + RVD NC OUT RIN VCELL V1 VDD VSS VSS CVD CIN Pack – Figure 9-1. Application Configuration Schematic Note Connect VSS (pins 3 and 4) externally to the CELL– terminal. 9.2.1 Design Requirements For this design example, use the parameters listed in Table 9-1 as the input parameters. Table 9-1. Parameters PARAMETER MIN NOM MAX UNIT RIN 900 1000 1100 Voltage monitor filter capacitance CIN 0.01 0.1 Supply voltage filter resistance RVD 100 Supply voltage filter capacitance CVD Voltage monitor filter resistance 10 EXTERNAL COMPONENT Submit Document Feedback µF 1K 0.1 Ω Ω µF Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 9.2.2 Detailed Design Procedure 1. Determine the overvoltage protection and delay. Select a device with the corresponding thresholds. 2. Follow the application schematic (see Figure 9-1) to connect the device. 3. Ensure both Vss pins are connected to the CELL– terminal on the PCB layout. 9.2.3 Application Curves 325 4.38 324 323 4.36 Hysteresis (mV) Overvoltage Threshold (V) 4.37 Min Max Mean 4.35 4.34 4.33 322 321 320 319 318 317 4.32 316 4.31 -40 -20 0 20 40 60 Temperature (qC) 80 100 315 -40 120 -20 0 20 40 60 Temperature (qC) D002 Figure 9-2. OVT vs Temperature 80 100 120 D003 Figure 9-3. VHYS vs Temperature 9.3 System Example Pack + 100 bq2946xx NC OUT 1K VCELL V1 VDD VSS VSS 0.1 µF 0.1 µF Pack – Figure 9-4. 1-Cell Configuration With Fixed Delay Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 11 BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 Power Supply Recommendations The maximum power of this device is 8 V on VDD. 9 Layout 9.1 Layout Guidelines 1. Ensure the RC filters for the V1 and VDD pins are placed as close as possible to the target terminal, reducing the tracing loop area. 2. The VSS pin should be routed to the CELL– terminal. 3. Ensure the trace connecting the fuse to the gate, source of the NFET to the Pack is sufficient to withstand the current during a fuse blown event. 9.2 Layout Example Place the RC filters close to the device terminals Power Trace Line Pack + NC OUT VDD V2 Pack ± PWPD VCELL VSS VSS Ensure trace can support sufficient current flow for fuse blow Connect the VSS pins to the CELL- side Figure 9-1. Layout Schematic 12 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 BQ2946 www.ti.com SLUSAS0E – DECEMBER 2011 – REVISED APRIL 2021 10 Device and Documentation Support 10.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 10.2 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 10.3 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 10.4 Trademarks TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 10.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 10.6 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: BQ2946 13 PACKAGE OPTION ADDENDUM www.ti.com 14-Apr-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) BQ294602DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 110 4602 BQ294602DRVT ACTIVE WSON DRV 6 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 110 4602 BQ294604DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 110 4604 BQ294604DRVT ACTIVE WSON DRV 6 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 110 4604 BQ294624DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 110 4624 BQ294624DRVT ACTIVE WSON DRV 6 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 110 4624 BQ294682DRVR ACTIVE WSON DRV 6 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 110 4682 BQ294682DRVT ACTIVE WSON DRV 6 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 110 4682 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
BQ294624DRVT 价格&库存

很抱歉,暂时无法提供与“BQ294624DRVT”相匹配的价格&库存,您可以联系我们找货

免费人工找货