CC2651R3
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
CC2651R3 SimpleLink™ Single-Protocol 2.4 GHz Wireless MCU
1 Features
Wireless microcontroller
•
•
•
•
•
•
Powerful 48-MHz Arm® Cortex®-M4 processor
352KB flash program memory
32KB of ultra-low leakage SRAM
8KB of Cache SRAM (Alternatively available as
general-purpose RAM)
Programmable radio includes support for 2(G)FSK, 4-(G)FSK, MSK, Bluetooth® 5.2 Low
Energy, IEEE 802.15.4 PHY and MAC
Supports over-the-air upgrade (OTA)
Low power consumption
•
•
MCU consumption:
– 2.91 mA active mode, CoreMark®
– 61 μA/MHz running CoreMark
– 0.8 μA standby mode, RTC, 32KB RAM
– 0.1 μA shutdown mode, wake-up on pin
Radio Consumption:
– 6.4 mA RX
– 7.1 mA TX at 0 dBm
– 9.5 mA TX at +5 dBm
Wireless protocol support
•
•
•
•
Zigbee®
Bluetooth® 5.2 Low Energy
SimpleLink™ TI 15.4-stack
Proprietary systems
High performance radio
•
•
-104 dBm for Bluetooth® Low Energy 125-kbps
Output power up to +5 dBm with temperature
compensation
MCU peripherals
•
•
•
•
•
•
•
•
Digital peripherals can be routed to any GPIO
Four 32-bit or eight 16-bit general-purpose timers
12-bit ADC, 200 kSamples/s, 8 channels
8-bit DAC
Analog Comparator
UART, SSI, I2C, I2S
Real-time clock (RTC)
Integrated temperature and battery monitor
Security enablers
•
•
•
AES 128-bit cryptographic accelerator
True random number generator (TRNG)
Additional cryptography drivers available in
Software Development Kit (SDK)
Development tools and software
•
•
•
•
LP-CC2651P3 Development Kit
SimpleLink™ CC13xx and CC26xx Software
Development Kit (SDK)
SmartRF™ Studio for simple radio configuration
SysConfig system configuration tool
Operating range
•
•
•
On-chip buck DC/DC converter
1.8-V to 3.8-V single supply voltage
-40 to +105°C
Package
•
•
•
7-mm × 7-mm RGZ VQFN48 (31 GPIOs)
5-mm × 5-mm RKP VQFN40 (23 GPIOs)
RoHS-compliant package
Regulatory compliance
•
Suitable for systems targeting compliance with
these standards:
– ETSI EN 300 328, EN 300 440 Cat. 2 and 3
– FCC CFR47 Part 15
– ARIB STD-T66
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
2 Applications
•
•
2400 to 2500 MHz ISM and SRD systems 1
with down to 4 kHz of receive bandwidth
Building automation
– Building security systems – motion detector,
electronic smart lock, door and window sensor,
garage door system, gateway
– HVAC – thermostat, wireless environmental
sensor, HVAC system controller, gateway
– Fire safety system – smoke and heat detector,
fire alarm control panel (FACP)
– Video surveillance – IP network camera
– Elevators and escalators – elevator main
control panel for elevators and escalators
•
•
•
•
•
•
Industrial transport – asset tracking
Factory automation and control
Medical
Electronic point of sale (EPOS) – Electronic Shelf
Label (ESL)
Communication equipment
– Wired networking – wireless LAN or Wi-Fi
access points, edge router , small business
router
Personal electronics
– Home theater & entertainment – smart
speakers, smart display, set-top box
– Wearables (non-medical) – smart trackers,
smart clothing
3 Description
The SimpleLink™ CC2651R3 device is a single-protocol 2.4-GHz wireless microcontroller (MCU) supporting
Zigbee®, Bluetooth®5.2 Low Energy, IEEE 802.15.4g, TI 15.4-Stack (2.4 GHz). The CC2651R3 is based on an
Arm® Cortex® M4 main processor and optimized for low-power wireless communication and advanced sensing
in grid infrastructure, building automation, retail automation, personal electronics and medical applications.
The CC2651R3 has a software defined radio powered by an Arm® Cortex® M0, which allows support for
multiple physical layers and RF standards. The device supports operation in the 2360 to 2500-MHz frequency
band. The CC2651R3 supports +5 dBm TX at 9.5 mA in the 2.4-GHz band. CC2651R3 has a receive sensitivity
of -104 dBm for 125-kbps Bluetooth® Low Energy Coded PHY.
The CC2651R3 has a low sleep current of 0.8 μA with RTC and 32KB RAM retention.
Consistent with many customers’ 10 to 15 years or longer life cycle requirements, TI has a product life cycle
policy with a commitment to product longevity and continuity of supply.
The CC2651R3 device is part of the SimpleLink™ MCU platform, which consists of Wi-Fi®, Bluetooth® Low
Energy, Thread, Zigbee, Wi-SUN®, Amazon Sidewalk, mioty, Sub-1 GHz MCUs, and host MCUs. CC2651R3 is
part of a scalable portfolio with flash sizes from 32KB to 704KB with pin-to-pin compatible package options.
The common SimpleLink™CC13xx and CC26xx Software Development Kit (SDK) and SysConfig system
configuration tool supports migration between devices in the portfolio. A comprehensive number of software
stacks, application examples and SimpleLink™ Academy training sessions are included in the SDK. For more
information, visit wireless connectivity.
Device Information
PART NUMBER(1)
PACKAGE
BODY SIZE (NOM)
CC2651R31T0RGZR
VQFN (48)
7.00 mm × 7.00 mm
CC2651R31T0RKPR
VQFN (40)
5.00 mm × 5.00 mm
(1)
For the most current part, package, and ordering information for all available devices, see the Package Option Addendum in Section
12, or see the TI website.
1
2
See RF Core for additional details on supported protocol standards, modulation formats, and data rates.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
2.
4
G
H
z
4 Functional Block Diagram
RF Core
cJTAG
Main CPU
40KB
ROM
ADC
ADC
®
®
Arm Cortex -M4
Processor
352KB
Flash
with 8KB
Cache
Digital PLL
DSP Modem
48 MHz
32KB
SRAM
SRAM
Arm® Cortex®-M0
Processor
ROM
General Hardware Peripherals and Modules
I2C
4× 32-bit Timers
8-bit DAC
UART
SSI (SPI)
12-bit ADC, 200 ks/s
I2S
Watchdog Timer
Low-Power Comparator
Up to 31 GPIOs
32 ch. µDMA
Time-to-Digital Converter
AES & TRNG
RTC
Temperature and
Battery Monitor
LDO, Clocks, and References
Optional DC/DC Converter
Figure 4-1. CC2651R3 Functional Block Diagram
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 2
3 Description.......................................................................2
4 Functional Block Diagram.............................................. 3
5 Revision History.............................................................. 4
6 Device Comparison......................................................... 5
7 Pin Configuration and Functions...................................6
7.1 Pin Diagram – RGZ Package (Top View)....................6
7.2 Signal Descriptions – RGZ Package...........................7
7.3 Pin Diagram – RKP Package (Top View)....................9
7.4 Signal Descriptions – RKP Package...........................9
7.5 Connections for Unused Pins and Modules.............. 11
8 Specifications................................................................ 12
8.1 Absolute Maximum Ratings...................................... 12
8.2 ESD Ratings............................................................. 12
8.3 Recommended Operating Conditions.......................12
8.4 Power Supply and Modules...................................... 12
8.5 Power Consumption - Power Modes........................ 13
8.6 Power Consumption - Radio Modes......................... 14
8.7 Nonvolatile (Flash) Memory Characteristics............. 14
8.8 Thermal Resistance Characteristics......................... 14
8.9 RF Frequency Bands................................................ 14
8.10 Bluetooth Low Energy - Receive (RX).................... 15
8.11 Bluetooth Low Energy - Transmit (TX).................... 18
8.12 Zigbee - IEEE 802.15.4-2006 2.4 GHz
(OQPSK DSSS1:8, 250 kbps) - RX.............................19
8.13 Zigbee - IEEE 802.15.4-2006 2.4 GHz
(OQPSK DSSS1:8, 250 kbps) - TX............................. 20
8.14 Timing and Switching Characteristics..................... 20
8.15 Peripheral Characteristics.......................................24
8.16 Typical Characteristics............................................ 30
9 Detailed Description......................................................36
9.1 Overview................................................................... 36
9.2 System CPU............................................................. 36
9.3 Radio (RF Core)........................................................37
9.4 Memory..................................................................... 38
9.5 Cryptography............................................................ 39
9.6 Timers....................................................................... 40
9.7 Serial Peripherals and I/O.........................................41
9.8 Battery and Temperature Monitor............................. 41
9.9 µDMA........................................................................ 41
9.10 Debug..................................................................... 41
9.11 Power Management................................................ 42
9.12 Clock Systems........................................................ 43
9.13 Network Processor..................................................43
10 Application, Implementation, and Layout................. 44
10.1 Reference Designs................................................. 44
10.2 Junction Temperature Calculation...........................45
11 Device and Documentation Support..........................46
11.1 Device Nomenclature..............................................46
11.2 Tools and Software..................................................47
11.3 Documentation Support.......................................... 49
11.4 Support Resources................................................. 49
11.5 Trademarks............................................................. 49
11.6 Electrostatic Discharge Caution.............................. 50
11.7 Glossary.................................................................. 50
12 Mechanical, Packaging, and Orderable
Information.................................................................... 51
5 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from February 15, 2022 to April 1, 2022 (from Revision A (February 2022) to Revision
B (April 2022))
Page
• Added RKP data............................................................................................................................................... 12
4
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
6 Device Comparison
X
7 X 7 mm VQFN (48)
X
5 X 5 mm VQFN (40)
RAM +
GPIO
Cache (KB)
5 X 5 mm VQFN (32)
X
FLASH
(KB)
4 X 4 mm VQFN (32)
X
X
+20 dBm PA
X
X
Multiprotocol
X
CC1311P3
Thread
CC1311R3
PACKAGE SIZE
ZigBee
X
Bluetooth® 5.2 LE
X
Sidewalk
X
Wi-SUN®
mioty
CC1310
Device
2.4GHz Prop.
Wireless M-Bus
Sub-1 GHz Prop.
RADIO SUPPORT
32-128
16-20 + 8
10-30
352
32 + 8
22-30
352
32 + 8
26
X
352
80 + 8
30
X
704
144 + 8
30
X
X
X
X
X
CC1312R
X
X
X
X
CC1312R7
X
X
X
X
CC1352R
X
X
X
X
X
X
X
X
X
352
80 + 8
28
X
CC1352P
X
X
X
X
X
X
X
X
X
X
352
80 + 8
26
X
CC1352P7
X
X
X
X
X
X
X
X
X
X
X
X
X
704
144 + 8
26
CC2640R2F
X
128
20 + 8
10-31
CC2642R
X
352
80 + 8
31
X
CC2642R-Q1
X
352
80 + 8
31
X
352
32 + 8
23-31
X
X
352
32 + 8
22-26
X
X
CC2651R3
X
X
X
CC2651P3
X
X
X
X
X
X
X
X
CC2652R
X
X
X
X
X
352
80 + 8
31
X
CC2652RB
X
X
X
X
X
352
80 + 8
31
X
CC2652R7
X
X
X
X
X
704
144 + 8
31
X
CC2652P
X
X
X
X
X
X
352
80 + 8
26
X
CC2652P7
X
X
X
X
X
X
704
144 + 8
26
X
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
5
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
7 Pin Configuration and Functions
38 DIO_25
37 DIO_24
40 DIO_27
39 DIO_26
42 DIO_29
41 DIO_28
44 VDDS
43 DIO_30
46 X48M_N
45 VDDR
48 VDDR_RF
47 X48M_P
7.1 Pin Diagram – RGZ Package (Top View)
34 VDDS_DCDC
4
33 DCDC_SW
DIO_0
5
32 DIO_22
DIO_1
6
31 DIO_21
DIO_2
7
30 DIO_20
DIO_3
8
29 DIO_19
DIO_4
9
28 DIO_18
DIO_5 10
27 DIO_17
DIO_6 11
26 DIO_16
DIO_7 12
25 JTAG_TCKC
DCOUPL 23
JTAG_TMSC 24
3
X32K_Q2
DIO_15 21
VDDS3 22
X32K_Q1
DIO_13 19
DIO_14 20
35 RESET_N
DIO_11 17
DIO_12 18
36 DIO_23
2
DIO_9 15
DIO_10 16
1
VDDS2 13
DIO_8 14
RF_P
RF_N
Figure 7-1. RGZ (7-mm × 7-mm) Pinout, 0.5-mm Pitch (Top View)
The following I/O pins marked in Figure 7-1 in bold have high-drive capabilities:
•
•
•
•
•
•
Pin 10, DIO_5
Pin 11, DIO_6
Pin 12, DIO_7
Pin 24, JTAG_TMSC
Pin 26, DIO_16
Pin 27, DIO_17
The following I/O pins marked in Figure 7-1 in italics have analog capabilities:
•
•
•
•
•
•
•
•
6
Pin 36, DIO_23
Pin 37, DIO_24
Pin 38, DIO_25
Pin 39, DIO_26
Pin 40, DIO_27
Pin 41, DIO_28
Pin 42, DIO_29
Pin 43, DIO_30
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
7.2 Signal Descriptions – RGZ Package
Table 7-1. Signal Descriptions – RGZ Package
PIN
NAME
NO.
I/O
TYPE
DESCRIPTION
DCDC_SW
33
—
Power
Output from internal DC/DC converter(1)
DCOUPL
23
—
Power
For decoupling of internal 1.27 V regulated digital-supply (2)
DIO_0
5
I/O
Digital
GPIO
DIO_1
6
I/O
Digital
GPIO
DIO_2
7
I/O
Digital
GPIO
DIO_3
8
I/O
Digital
GPIO
DIO_4
9
I/O
Digital
GPIO
DIO_5
10
I/O
Digital
GPIO, high-drive capability
DIO_6
11
I/O
Digital
GPIO, high-drive capability
DIO_7
12
I/O
Digital
GPIO, high-drive capability
DIO_8
14
I/O
Digital
GPIO
DIO_9
15
I/O
Digital
GPIO
DIO_10
16
I/O
Digital
GPIO
DIO_11
17
I/O
Digital
GPIO
DIO_12
18
I/O
Digital
GPIO
DIO_13
19
I/O
Digital
GPIO
DIO_14
20
I/O
Digital
GPIO
DIO_15
21
I/O
Digital
GPIO
DIO_16
26
I/O
Digital
GPIO, JTAG_TDO, high-drive capability
DIO_17
27
I/O
Digital
GPIO, JTAG_TDI, high-drive capability
DIO_18
28
I/O
Digital
GPIO
DIO_19
29
I/O
Digital
GPIO
DIO_20
30
I/O
Digital
GPIO
DIO_21
31
I/O
Digital
GPIO
DIO_22
32
I/O
Digital
GPIO
DIO_23
36
I/O
Digital or Analog
GPIO, analog capability
DIO_24
37
I/O
Digital or Analog
GPIO, analog capability
DIO_25
38
I/O
Digital or Analog
GPIO, analog capability
DIO_26
39
I/O
Digital or Analog
GPIO, analog capability
DIO_27
40
I/O
Digital or Analog
GPIO, analog capability
DIO_28
41
I/O
Digital or Analog
GPIO, analog capability
DIO_29
42
I/O
Digital or Analog
GPIO, analog capability
DIO_30
43
I/O
Digital or Analog
GPIO, analog capability
EGP
—
—
GND
Ground – exposed ground pad(3)
JTAG_TMSC
24
I/O
Digital
JTAG TMSC, high-drive capability
JTAG_TCKC
25
I
Digital
JTAG TCKC
RESET_N
35
I
Digital
Reset, active low. No internal pullup resistor
RF_P
1
—
RF
Positive RF input signal to LNA during RX
Positive RF output signal from PA during TX
RF_N
2
—
RF
Negative RF input signal to LNA during RX
Negative RF output signal from PA during TX
VDDR
45
—
Power
Internal supply, must be powered from the internal DC/DC
converter or the internal LDO(2) (4) (6)
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
7
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
Table 7-1. Signal Descriptions – RGZ Package (continued)
PIN
NAME
I/O
TYPE
DESCRIPTION
VDDR_RF
48
—
Power
Internal supply, must be powered from the internal DC/DC
converter or the internal LDO(2) (5) (6)
VDDS
44
—
Power
1.8-V to 3.8-V main chip supply(1)
VDDS2
13
—
Power
1.8-V to 3.8-V DIO supply(1)
VDDS3
22
—
Power
1.8-V to 3.8-V DIO supply(1)
VDDS_DCDC
34
—
Power
1.8-V to 3.8-V DC/DC converter supply
X48M_N
46
—
Analog
48-MHz crystal oscillator pin 1
X48M_P
47
—
Analog
48-MHz crystal oscillator pin 2
X32K_Q1
3
—
Analog
32-kHz crystal oscillator pin 1
X32K_Q2
4
—
Analog
32-kHz crystal oscillator pin 2
(1)
(2)
(3)
(4)
(5)
(6)
8
NO.
For more details, see the device technical reference manual listed in Section 11.3.
Do not supply external circuitry from this pin.
EGP is the only ground connection for the device. Good electrical connection to device ground on printed circuit board (PCB) is
imperative for proper device operation.
If internal DC/DC converter is not used, this pin is supplied internally from the main LDO.
If internal DC/DC converter is not used, this pin must be connected to VDDR for supply from the main LDO.
Output from internal DC/DC and LDO is trimmed to 1.68 V.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
31 DIO_18
32 DIO_19
33 DIO_20
34 DIO_21
35 DIO_22
36 VDDS
37 VDDR
38 X48M_N
39 X48M_P
40 VDDR_RF
7.3 Pin Diagram – RKP Package (Top View)
RF_P
1
30
DIO_17
DIO_5
10
21
DIO_11
20
DIO_12
DIO_10
DIO_13
22
19
23
9
JTAG_TCKC
8
DIO_4
18
DIO_3
17
DIO_14
DCOUPL
DCDC_SW
24
JTAG_TMSC
25
7
16
6
DIO_2
15
DIO_1
DIO_9
VDDS_DCDC
VDDS3
RESET_N
26
14
27
5
13
4
DIO_0
DIO_8
X32K_Q2
VDDS2
DIO_15
12
DIO_16
28
11
29
3
DIO_7
2
DIO_6
RF_N
X32K_Q1
Figure 7-2. RKP (5-mm × 5-mm) Pinout, 0.4-mm Pitch (Top View)
The following I/O pins marked in Figure 7-2 in bold have high-drive capabilities:
•
•
•
•
•
•
Pin 10, DIO_5
Pin 11, DIO_6
Pin 12, DIO_7
Pin 18, JTAG_TMSC
Pin 20, DIO_10
Pin 21, DIO_11
The following I/O pins marked in Figure 7-2 in italics have analog capabilities:
•
•
•
•
•
•
•
•
Pin 28, DIO_15
Pin 29, DIO_16
Pin 30, DIO_17
Pin 31, DIO_18
Pin 32, DIO_19
Pin 33, DIO_20
Pin 34, DIO_21
Pin 35, DIO_22
7.4 Signal Descriptions – RKP Package
Table 7-2. Signal Descriptions – RKP Package
PIN
NAME
NO.
I/O
TYPE
DESCRIPTION
DCDC_SW
25
—
Power
Output from internal DC/DC converter(1)
DCOUPL
17
—
Power
For decoupling of internal 1.27 V regulated digital-supply (2)
DIO_0
5
I/O
Digital
GPIO
DIO_1
6
I/O
Digital
GPIO
DIO_2
7
I/O
Digital
GPIO
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
9
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
Table 7-2. Signal Descriptions – RKP Package (continued)
PIN
I/O
TYPE
8
I/O
Digital
GPIO
9
I/O
Digital
GPIO
DIO_5
10
I/O
Digital
GPIO, high-drive capability
DIO_6
11
I/O
Digital
GPIO, high-drive capability
DIO_7
12
I/O
Digital
GPIO, high-drive capability
DIO_8
14
I/O
Digital
GPIO
DIO_9
15
I/O
Digital
GPIO
DIO_10
20
I/O
Digital
GPIO, JTAG_TDO, high-drive capability
DIO_11
21
I/O
Digital
GPIO, JTAG_TDI, high-drive capability
DIO_12
22
I/O
Digital
GPIO
DIO_13
23
I/O
Digital
GPIO
DIO_14
24
I/O
Digital
GPIO
DIO_15
28
I/O
Digital
GPIO, analog capability
DIO_16
29
I/O
Digital
GPIO, analog capability
DIO_17
30
I/O
Digital
GPIO, analog capability
DIO_18
31
I/O
Digital
GPIO, analog capability
DIO_19
32
I/O
Digital
GPIO, analog capability
DIO_20
33
I/O
Digital
GPIO, analog capability
DIO_21
34
I/O
Digital
GPIO, analog capability
DIO_22
35
I/O
Digital
GPIO, analog capability
EGP
—
—
GND
Ground – exposed ground pad(3)
JTAG_TSMC
18
I/O
Digital
JTAG TMSC, high-drive capability
JTAG_TCKC
19
I
Digital
JTAG TCKC
RESET_N
27
I
Digital
Reset, active low. No internal pullup resistor
RF_P
1
—
RF
Positive RF input signal to LNA during RX
Positive RF output signal from PA during TX
RF_N
2
—
RF
Negative RF input signal to LNA during RX
Negative RF output signal from PA during TX
VDDR
37
—
Power
Internal supply, must be powered from the internal DC/DC
converter or the internal LDO(2) (4) (6)
VDDR_RF
40
—
Power
Internal supply, must be powered from the internal DC/DC
converter or the internal LDO(2) (5) (6)
VDDS
36
—
Power
1.8-V to 3.8-V main chip supply(1)
VDDS2
13
—
Power
1.8-V to 3.8-V DIO supply(1)
VDDS3
16
—
Power
1.8-V to 3.8-V DIO supply(1)
VDDS_DCDC
26
—
Power
1.8-V to 3.8-V DC/DC converter supply
X48M_N
38
—
Analog
48-MHz crystal oscillator pin 1
X48M_P
39
—
Analog
48-MHz crystal oscillator pin 2
X32K_Q1
3
—
Analog
32-kHz crystal oscillator pin 1
X32K_Q2
4
—
Analog
32-kHz crystal oscillator pin 2
NAME
NO.
DIO_3
DIO_4
(1)
(2)
(3)
(4)
(5)
(6)
10
DESCRIPTION
For more details, see the device technical reference manual listed in Section 11.3.
Do not supply external circuitry from this pin.
EGP is the only ground connection for the device. Good electrical connection to device ground on printed circuit board (PCB) is
imperative for proper device operation.
If internal DC/DC converter is not used, this pin is supplied internally from the main LDO.
If internal DC/DC converter is not used, this pin must be connected to VDDR for supply from the main LDO.
Output from internal DC/DC and LDO is trimmed to 1.68 V.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
7.5 Connections for Unused Pins and Modules
Table 7-3. Connections for Unused Pins – RGZ Package
FUNCTION
GPIO
32.768-kHz crystal
DC/DC converter(2)
(1)
(2)
SIGNAL NAME
DIO_n
PIN NUMBER
ACCEPTABLE PRACTICE(1)
PREFERRED
PRACTICE(1)
5–12
14–21
26–32
36–43
NC or GND
NC
NC or GND
NC
X32K_Q1
3
X32K_Q2
4
DCDC_SW
33
NC
NC
VDDS_DCDC
34
VDDS
VDDS
NC = No connect
When the DC/DC converter is not used, the inductor between DCDC_SW and VDDR can be removed. VDDR and VDDR_RF must still
be connected and the 22 uF DCDC capacitor must be kept on the VDDR net.
Table 7-4. Connection for Unused Pins and Modules – RKP Package
FUNCTION
SIGNAL NAME
GPIO
DIO_n
32.768-kHz crystal
No Connects
DC/DC converter
PIN NUMBER
ACCEPTABLE
PRACTICE
PREFERRED PRACTICE
5-12
14-15
20-24
28-35
NC or GND
NC
NC or GND
NC
NC
NC
X32K_Q1
3
X32K_Q2
4
NC
DCDC_SW
25
NC
NC
VDDS_DCDC
26
VDDS
VDDS
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
11
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8 Specifications
8.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1) (2)
VDDS(3)
MIN
MAX
–0.3
4.1
V
–0.3
VDDS + 0.3, max 4.1
V
–0.3
VDDR + 0.3, max 2.25
V
Voltage scaling enabled
–0.3
VDDS
Voltage scaling disabled, internal reference
–0.3
1.49
Voltage scaling disabled, VDDS as reference
–0.3
VDDS / 2.9
Supply voltage
Voltage on any digital
pin(4) (5)
Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X48M_N and X48M_P
Vin
Voltage on ADC input
Input level, RF pins (RF_P and RF_N)
Tstg
(1)
(2)
(3)
(4)
(5)
5
Storage temperature
–40
UNIT
V
dBm
150
°C
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime
All voltage values are with respect to ground, unless otherwise noted.
VDDS_DCDC, VDDS2 and VDDS3 must be at the same potential as VDDS.
Including analog capable DIOs.
Injection current is not supported on any GPIO pin
8.2 ESD Ratings
VESD
(1)
(2)
Electrostatic discharge
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
All pins
±2000
V
Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)
All pins
±500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process
8.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Operating ambient temperature(1) (2)
–40
105
°C
temperature(1) (2)
–40
115
°C
1.8
3.8
V
Rising supply voltage slew rate
0
100
mV/µs
Falling supply voltage slew rate(3)
0
20
mV/µs
Operating junction
Operating supply voltage (VDDS)
(1)
(2)
(3)
Operation at or near maximum operating temperature for extended durations will result in lifetime reduction.
For thermal resistance characteristics refer to Section 8.8.
For small coin-cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDDS input capacitor must be used
to ensure compliance with this slew rate.
8.4 Power Supply and Modules
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
VDDS Power-on-Reset (POR) threshold
TYP
MAX
UNIT
1.1 - 1.55
V
VDDS Brown-out Detector (BOD)
Rising threshold
1.77
V
VDDS Brown-out Detector (BOD), before initial boot (1)
Rising threshold
1.70
V
VDDS Brown-out Detector (BOD)
Falling threshold
1.75
V
(1)
12
Brown-out Detector is trimmed at initial boot, value is kept until device is reset by a POR reset or the RESET_N pin
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.5 Power Consumption - Power Modes
When measured on the CC26x1-R3EM-7ID reference design with Tc = 25 °C, VDDS = 3.0 V with DC/DC enabled unless
otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Core Current Consumption
Reset. RESET_N pin asserted or VDDS below power-on-reset
threshold
150
Shutdown. No clocks running, no retention
100
RTC running, CPU, 32KB RAM and (partial) register retention.
RCOSC_LF
0.8
µA
RTC running, CPU, 32KB RAM and (partial) register retention
XOSC_LF
0.9
µA
RTC running, CPU, 32KB RAM and (partial) register retention.
RCOSC_LF
2.4
µA
RTC running, CPU, 32KB RAM and (partial) register retention.
XOSC_LF
2.6
µA
Idle
Supply Systems and RAM powered
RCOSC_HF
650
µA
Active
MCU running CoreMark at 48 MHz
RCOSC_HF
2.91
mA
Delta current with domain enabled
56.0
Serial power domain Delta current with domain enabled
5.0
Reset and
Shutdown
Standby
without cache
retention
Icore
Standby
with cache retention
nA
Peripheral Current Consumption
Peripheral power
domain
Iperi
(1)
RF Core
Delta current with power domain enabled,
clock enabled, RF core idle
144
µDMA
Delta current with clock enabled, module is idle
68.6
Timers
Delta current with clock enabled, module is idle(1)
102
I2C
Delta current with clock enabled, module is idle
12.1
I2S
Delta current with clock enabled, module is idle
30.8
SSI
Delta current with clock enabled, module is idle
71.7
UART
Delta current with clock enabled, module is idle
147
CRYPTO (AES)
Delta current with clock enabled, module is idle
28.1
TRNG
Delta current with clock enabled, module is idle
27.1
µA
Only one GPTimer running
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
13
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.6 Power Consumption - Radio Modes
When measured on the CC26x1-R3EM-7ID reference design with Tc = 25 °C, VDDS = 3.0 V with DC/DC enabled unless
otherwise noted.
PARAMETER
TEST CONDITIONS
Radio receive current
Radio transmit current
2.4 GHz PA (Bluetooth Low Energy)
MIN
TYP
MAX
UNIT
2440 MHz
6.4
mA
0 dBm output power setting
2440 MHz
7.1
mA
+5 dBm output power setting
2440 MHz
9.5
mA
8.7 Nonvolatile (Flash) Memory Characteristics
Over operating free-air temperature range and VDDS = 3.0 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
Flash sector size
TYP
MAX
8
UNIT
KB
Supported flash erase cycles before failure, full bank(1) (5)
30
k Cycles
Supported flash erase cycles before failure, single sector(2)
60
k Cycles
Maximum number of write operations per row before sector
erase(3)
83
Flash retention
105 °C
Flash sector erase current
Average delta current
9.7
Zero cycles
10
Flash sector erase time(4)
11.4
Flash write time(4)
4 bytes at a time
(3)
(4)
(5)
mA
ms
4000
Average delta current, 4 bytes at a time
(1)
(2)
Years
30k cycles
Flash write current
Write
Operations
ms
5.3
mA
21.6
µs
A full bank erase is counted as a single erase cycle on each sector.
Up to 4 customer-designated sectors can be individually erased an additional 30k times beyond the baseline bank limitation of 30k
cycles
Each wordline is 2048 bits (or 256 bytes) wide. This limitation corresponds to sequential memory writes of 4 (3.1) bytes minimum
per write over a whole wordline. If additional writes to the same wordline are required, a sector erase is required once the maximum
number of write operations per row is reached.
This number is dependent on Flash aging and increases over time and erase cycles
Aborting flash during erase or program modes is not a safe operation.
8.8 Thermal Resistance Characteristics
PACKAGE
THERMAL
METRIC(1)
RGZ
(VQFN)
RKP
(VQFN)
UNIT
48 PINS
40 PINS
RθJA
Junction-to-ambient thermal resistance
25.0
30.9
°C/W(2)
RθJC(top)
Junction-to-case (top) thermal resistance
14.5
20.2
°C/W(2)
RθJB
Junction-to-board thermal resistance
8.7
10.3
°C/W(2)
ψJT
Junction-to-top characterization parameter
0.2
0.2
°C/W(2)
ψJB
Junction-to-board characterization parameter
8.6
10.3
°C/W(2)
RθJC(bot)
Junction-to-case (bottom) thermal resistance
2.1
2.1
°C/W(2)
(1)
(2)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
°C/W = degrees Celsius per watt.
8.9 RF Frequency Bands
Over operating free-air temperature range (unless otherwise noted).
PARAMETER
MIN
Frequency bands
14
2360
Submit Document Feedback
TYP
MAX
UNIT
2500
MHz
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.10 Bluetooth Low Energy - Receive (RX)
When measured on the CC26x1-R3EM-7ID reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with
DC/DC enabled unless otherwise noted. All measurements are performed at the antenna input with a combined RX and TX
path. All measurements are performed conducted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
125 kbps (LE Coded)
Receiver sensitivity
Differential mode. BER = 10–3
–104
dBm
Receiver sensitivity
Single ended mode. Measured on CC26x1P3EM-5XS24, at the SMA connector, BER = 10–3
–104
dBm
10–3
Receiver saturation
Differential mode. BER =
>5
dBm
Frequency error tolerance
Difference between the incoming carrier frequency and
the internally generated carrier frequency
> (–300 / 300)
kHz
Data rate error tolerance
Difference between incoming data rate and the internally
generated data rate (37-byte packets)
> (–320 / 240)
ppm
Data rate error tolerance
Difference between incoming data rate and the internally
generated data rate (255-byte packets)
> (–125 / 125)
ppm
Co-channel rejection(1)
Wanted signal at –79 dBm, modulated interferer in
channel, BER = 10–3
Selectivity, ±1 MHz(1)
–1.5
dB
Wanted signal at –79 dBm, modulated interferer at ±1
MHz, BER = 10–3
8 / 4.5(2)
dB
Selectivity, ±2 MHz(1)
Wanted signal at –79 dBm, modulated interferer at ±2
MHz, BER = 10–3
44 / 39(2)
dB
Selectivity, ±3 MHz(1)
Wanted signal at –79 dBm, modulated interferer at ±3
MHz, BER = 10–3
46 / 44(2)
dB
Selectivity, ±4 MHz(1)
Wanted signal at –79 dBm, modulated interferer at ±4
MHz, BER = 10–3
44 / 46(2)
dB
Selectivity, ±6 MHz(1)
Wanted signal at –79 dBm, modulated interferer at ≥ ±6
MHz, BER = 10–3
48 / 44(2)
dB
Selectivity, ±7 MHz
Wanted signal at –79 dBm, modulated interferer at ≥ ±7
MHz, BER = 10–3
51 / 45(2)
dB
Selectivity, Image frequency(1)
Wanted signal at –79 dBm, modulated interferer at image
frequency, BER = 10–3
39
dB
Selectivity, Image frequency ±1
MHz(1)
Note that Image frequency + 1 MHz is the Co- channel
–1 MHz. Wanted signal at –79 dBm, modulated interferer
at ±1 MHz from image frequency, BER = 10–3
4.5 / 44 (2)
dB
500 kbps (LE Coded)
Receiver sensitivity
Differential mode. BER = 10–3
–100
dBm
Receiver sensitivity
Single ended mode. Measured on CC26x1P3EM-5XS24, at the SMA connector, BER = 10–3
–100
dBm
Receiver saturation
Differential mode. BER = 10–3
>5
dBm
Frequency error tolerance
Difference between the incoming carrier frequency and
the internally generated carrier frequency
> (–300 / 300)
kHz
Data rate error tolerance
Difference between incoming data rate and the internally
generated data rate (37-byte packets)
> (–450 / 450)
ppm
Data rate error tolerance
Difference between incoming data rate and the internally
generated data rate (255-byte packets)
> (–175 / 175)
ppm
Co-channel rejection(1)
Wanted signal at –72 dBm, modulated interferer in
channel, BER = 10–3
Selectivity, ±1 MHz(1)
–3.5
dB
Wanted signal at –72 dBm, modulated interferer at ±1
MHz, BER = 10–3
8 / 4(2)
dB
Selectivity, ±2 MHz(1)
Wanted signal at –72 dBm, modulated interferer at ±2
MHz, BER = 10–3
44 / 37(2)
dB
Selectivity, ±3 MHz(1)
Wanted signal at –72 dBm, modulated interferer at ±3
MHz, BER = 10–3
46 / 46(2)
dB
Selectivity, ±4 MHz(1)
Wanted signal at –72 dBm, modulated interferer at ±4
MHz, BER = 10–3
45 / 47(2)
dB
Selectivity, ±6 MHz(1)
Wanted signal at –72 dBm, modulated interferer at ≥ ±6
MHz, BER = 10–3
46 / 45(2)
dB
Selectivity, ±7 MHz
Wanted signal at –72 dBm, modulated interferer at ≥ ±7
MHz, BER = 10–3
49 / 45(2)
dB
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
15
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.10 Bluetooth Low Energy - Receive (RX) (continued)
When measured on the CC26x1-R3EM-7ID reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with
DC/DC enabled unless otherwise noted. All measurements are performed at the antenna input with a combined RX and TX
path. All measurements are performed conducted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Selectivity, Image frequency(1)
Wanted signal at –72 dBm, modulated interferer at image
frequency, BER = 10–3
37
dB
Selectivity, Image frequency ±1
MHz(1)
Note that Image frequency + 1 MHz is the Co- channel
–1 MHz. Wanted signal at –72 dBm, modulated interferer
at ±1 MHz from image frequency, BER = 10–3
4 / 46(2)
dB
1 Mbps (LE 1M)
Receiver sensitivity
Differential mode. BER = 10–3
–97
dBm
Receiver sensitivity
Single ended mode. Measured on CC26x1P3EM-5XS24, at the SMA connector, BER = 10–3
–97
dBm
Receiver saturation
Differential mode. BER = 10–3
>5
dBm
Frequency error tolerance
Difference between the incoming carrier frequency and
the internally generated carrier frequency
> (–350 / 350)
kHz
Data rate error tolerance
Difference between incoming data rate and the internally
generated data rate (37-byte packets)
> (–750 / 750)
ppm
Co-channel rejection(1)
Wanted signal at –67 dBm, modulated interferer in
channel, BER = 10–3
Selectivity, ±1 MHz(1)
–6
dB
Wanted signal at –67 dBm, modulated interferer at ±1
MHz, BER = 10–3
7 / 4(2)
dB
Selectivity, ±2 MHz(1)
Wanted signal at –67 dBm, modulated interferer at ±2
MHz,BER = 10–3
40 / 33(2)
dB
Selectivity, ±3 MHz(1)
Wanted signal at –67 dBm, modulated interferer at ±3
MHz, BER = 10–3
36 / 41(2)
dB
Selectivity, ±4 MHz(1)
Wanted signal at –67 dBm, modulated interferer at ±4
MHz, BER = 10–3
37 / 45(2)
dB
Selectivity, ±5 MHz or more(1)
Wanted signal at –67 dBm, modulated interferer at ≥ ±5
MHz, BER = 10–3
40
dB
Selectivity, image frequency(1)
Wanted signal at –67 dBm, modulated interferer at image
frequency, BER = 10–3
33
dB
Selectivity, image frequency
±1 MHz(1)
Note that Image frequency + 1 MHz is the Co- channel
–1 MHz. Wanted signal at –67 dBm, modulated interferer
at ±1 MHz from image frequency, BER = 10–3
4 / 41(2)
dB
Out-of-band blocking(3)
30 MHz to 2000 MHz
–10
dBm
Out-of-band blocking
2003 MHz to 2399 MHz
–18
dBm
Out-of-band blocking
2484 MHz to 2997 MHz
–12
dBm
Out-of-band blocking
3000 MHz to 12.75 GHz
–2
dBm
Intermodulation
Wanted signal at 2402 MHz, –64 dBm. Two interferers
at 2405 and 2408 MHz respectively, at the given power
level
–42
dBm
Spurious emissions,
30 to 1000 MHz
Measurement in a 50-Ω single-ended load.
< –59
dBm
Spurious emissions,
1 to 12.75 GHz
Measurement in a 50-Ω single-ended load.
< –47
dBm
RSSI dynamic range
70
dB
RSSI accuracy
±4
dB
2 Mbps (LE 2M)
Receiver sensitivity
Differential mode. Measured at SMA connector, BER =
10–3
–92
dBm
Receiver sensitivity
Single ended mode. Measured on CC26x1P3EM-5XS24, at the SMA connector, BER = 10–3
–92
dBm
Receiver saturation
Differential mode. Measured at SMA connector, BER =
10–3
>5
dBm
Frequency error tolerance
Difference between the incoming carrier frequency and
the internally generated carrier frequency
> (–500 / 500)
kHz
Data rate error tolerance
Difference between incoming data rate and the internally
generated data rate (37-byte packets)
> (–700 / 750)
ppm
16
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.10 Bluetooth Low Energy - Receive (RX) (continued)
When measured on the CC26x1-R3EM-7ID reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with
DC/DC enabled unless otherwise noted. All measurements are performed at the antenna input with a combined RX and TX
path. All measurements are performed conducted.
PARAMETER
TEST CONDITIONS
Co-channel rejection(1)
Wanted signal at –67 dBm, modulated interferer in
channel,BER = 10–3
Selectivity, ±2 MHz(1)
MIN
TYP
MAX
UNIT
–7
dB
Wanted signal at –67 dBm, modulated interferer at ±2
MHz, Image frequency is at –2 MHz, BER = 10–3
8 / 4(2)
dB
Selectivity, ±4 MHz(1)
Wanted signal at –67 dBm, modulated interferer at ±4
MHz, BER = 10–3
36 / 31(2)
dB
Selectivity, ±6 MHz(1)
Wanted signal at –67 dBm, modulated interferer at ±6
MHz, BER = 10–3
37 / 36(2)
dB
Selectivity, image frequency(1)
Wanted signal at –67 dBm, modulated interferer at image
frequency, BER = 10–3
4
dB
Selectivity, image frequency
±2 MHz(1)
Note that Image frequency + 2 MHz is the Co-channel.
Wanted signal at –67 dBm, modulated interferer at ±2
MHz from image frequency, BER = 10–3
–7 / 36(2)
dB
Out-of-band blocking(3)
30 MHz to 2000 MHz
–16
dBm
Out-of-band blocking
2003 MHz to 2399 MHz
–21
dBm
Out-of-band blocking
2484 MHz to 2997 MHz
–15
dBm
Out-of-band blocking
3000 MHz to 12.75 GHz
–12
dBm
Intermodulation
Wanted signal at 2402 MHz, –64 dBm. Two interferers
at 2408 and 2414 MHz respectively, at the given power
level
–38
dBm
(1)
(2)
(3)
Numbers given as I/C dB
X / Y, where X is +N MHz and Y is –N MHz
Excluding one exception at Fwanted / 2, per Bluetooth Specification
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
17
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.11 Bluetooth Low Energy - Transmit (TX)
When measured on the CC26x1-R3EM-7ID reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with
DC/DC enabled unless otherwise noted. All measurements are performed at the antenna input with a combined RX and TX
path. All measurements are performed conducted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
General Parameters
Max output power
Differential mode, delivered to a single-ended 50 Ω load through a balun
5
dBm
Max output power
Single-ended mode. Measured on CC26x1-P3EM-5XS24, delivered to a single-ended 50 Ω
load through a balun
3
dBm
Output power
programmable range
Differential mode, delivered to a single-ended 50 Ω load through a balun
26
dB
Spurious emissions and harmonics
Spurious emissions
f < 1 GHz, outside restricted bands
< –36
dBm
f < 1 GHz, restricted bands ETSI
< –54
dBm
f < 1 GHz, restricted bands FCC
< –55
dBm
f > 1 GHz, including harmonics
Harmonics
18
+5 dBm setting
< –42
dBm
Second harmonic
< –42
dBm
Third harmonic
< –42
dBm
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.12 Zigbee - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - RX
When measured on the CC26x1-R3EM-7ID reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with
DC/DC enabled unless otherwise noted. All measurements are performed at the antenna input with a combined RX and TX
path. All measurements are performed conducted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
General Parameters
Receiver sensitivity
Differential mode PER = 1%
–100
dBm
Receiver sensitivity
Single-Ended mode. Measured on CC26x1-P3EM-5XS24 at
the SMA connector. PER = 1%
-99
dBm
Receiver saturation
PER = 1%
>5
dBm
Adjacent channel rejection
Wanted signal at –82 dBm, modulated interferer at ±5 MHz,
PER = 1%
36
dB
Alternate channel rejection
Wanted signal at –82 dBm, modulated interferer at ±10 MHz,
PER = 1%
57
dB
Channel rejection, ±15 MHz or more
Wanted signal at –82 dBm, undesired signal is IEEE
802.15.4 modulated channel, stepped through all channels
2405 to 2480 MHz, PER = 1%
59
dB
Blocking and desensitization,
5 MHz from upper band edge
Wanted signal at –97 dBm (3 dB above the sensitivity level),
CW jammer, PER = 1%
57
dB
Blocking and desensitization,
10 MHz from upper band edge
Wanted signal at –97 dBm (3 dB above the sensitivity level),
CW jammer, PER = 1%
63
dB
Blocking and desensitization,
20 MHz from upper band edge
Wanted signal at –97 dBm (3 dB above the sensitivity level),
CW jammer, PER = 1%
63
dB
Blocking and desensitization,
50 MHz from upper band edge
Wanted signal at –97 dBm (3 dB above the sensitivity level),
CW jammer, PER = 1%
66
dB
Blocking and desensitization,
–5 MHz from lower band edge
Wanted signal at –97 dBm (3 dB above the sensitivity level),
CW jammer, PER = 1%
60
dB
Blocking and desensitization,
–10 MHz from lower band edge
Wanted signal at –97 dBm (3 dB above the sensitivity level),
CW jammer, PER = 1%
60
dB
Blocking and desensitization,
–20 MHz from lower band edge
Wanted signal at –97 dBm (3 dB above the sensitivity level),
CW jammer, PER = 1%
63
dB
Blocking and desensitization,
–50 MHz from lower band edge
Wanted signal at –97 dBm (3 dB above the sensitivity level),
CW jammer, PER = 1%
65
dB
Spurious emissions, 30 MHz to 1000
MHz
Measurement in a 50-Ω single-ended load(1)
–66
dBm
Spurious emissions, 1 GHz to 12.75
GHz
Measurement in a 50-Ω single-ended load(1)
–53
dBm
Frequency error tolerance
Difference between the incoming carrier frequency and the
internally generated carrier frequency
> 350
ppm
Symbol rate error tolerance
Difference between incoming symbol rate and the internally
generated symbol rate
> 1000
ppm
RSSI dynamic range
95
dB
RSSI accuracy
±4
dB
(1)
Suitable for systems targeting compliance with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
19
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.13 Zigbee - IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps) - TX
When measured on the CC26x1-R3EM-7ID reference design with Tc = 25 °C, VDDS = 3.0 V, fRF = 2440 MHz with
DC/DC enabled unless otherwise noted. All measurements are performed at the antenna input with a combined RX and TX
path. All measurements are performed conducted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
General Parameters
Max output power
Differential mode, delivered to a single-ended 50-Ω load through a balun
5
dBm
Output power
programmable range
Differential mode, delivered to a single-ended 50-Ω load through a balun
26
dB
Spurious emissions and harmonics
Spurious emissions (1)
Harmonics
f < 1 GHz, outside restricted
bands
< -36
dBm
f < 1 GHz, restricted bands ETSI
< -47
dBm
f < 1 GHz, restricted bands FCC
< -55
dBm
f > 1 GHz, including harmonics
< –42
dBm
Second harmonic
< -42
dBm
Third harmonic
< -42
dBm
+5 dBm setting
IEEE 802.15.4-2006 2.4 GHz (OQPSK DSSS1:8, 250 kbps)
Error vector magnitude
(1)
+5 dBm setting
2
%
To ensure margins for passing FCC band edge requirements at 2483.5 MHz, a lower than maximum output-power setting or less than
100% duty cycle may be used when operating at 2480 MHz.
8.14 Timing and Switching Characteristics
8.14.1 Reset Timing
PARAMETER
MIN
RESET_N low duration
TYP
MAX
UNIT
1
µs
8.14.2 Wakeup Timing
Measured over operating free-air temperature with VDDS = 3.0 V (unless otherwise noted). The times listed here do not
include software overhead.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
MCU, Reset to Active(1)
850 - 4000
µs
MCU, Shutdown to Active(1)
850 - 4000
µs
MCU, Standby to Active
160
µs
MCU, Active to Standby
36
µs
MCU, Idle to Active
14
µs
(1)
The wakeup time is dependent on remaining charge on VDDR capacitor when starting the device, and thus how long the device has
been in Reset or Shutdown before starting up again. The wake up time increases with a higher capacitor value.
8.14.3 Clock Specifications
8.14.3.1 48 MHz Crystal Oscillator (XOSC_HF)
Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.(1)
PARAMETER
MIN
TYP
Crystal frequency
48
ESR
Equivalent series resistance
6 pF < CL ≤ 9 pF
20
ESR
Equivalent series resistance
5 pF < CL ≤ 6 pF
LM
Motional inductance, relates to the load capacitance that is used for the crystal (CL
in Farads)(5)
CL
20
Crystal load
capacitance(4)
7(3)
UNIT
MHz
60
Ω
80
Ω
< 3 × 10–25 / CL 2
5
Submit Document Feedback
MAX
H
9
pF
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.(1)
PARAMETER
Start-up
(1)
(2)
(3)
MIN
TYP
time(2)
MAX
UNIT
200
µs
Probing or otherwise stopping the crystal while the DC/DC converter is enabled may cause permanent damage to the device.
Start-up time using the TI-provided power driver. Start-up time may increase if driver is not used.
On-chip default connected capacitance including reference design parasitic capacitance. Connected internal capacitance is changed
through software in the Customer Configuration section (CCFG).
Adjustable load capacitance is integrated into the device.
The crystal manufacturer's specification must satisfy this requirement for proper operation.
(4)
(5)
8.14.3.2 48 MHz RC Oscillator (RCOSC_HF)
Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.
MIN
TYP
MAX
UNIT
Frequency
48
MHz
Uncalibrated frequency accuracy
±1
%
Calibrated frequency accuracy(1)
±0.25
%
5
µs
Start-up time
(1)
Accuracy relative to the calibration source (XOSC_HF)
8.14.3.3 32.768 kHz Crystal Oscillator (XOSC_LF)
Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.
MIN
TYP
Crystal frequency
ESR
CL
Equivalent series resistance
Crystal load capacitance
(1)
MAX
32.768
6
UNIT
kHz
30
100
kΩ
7(1)
12
pF
Default load capacitance using TI reference designs including parasitic capacitance. Crystals with different load capacitance may be
used.
8.14.3.4 32 kHz RC Oscillator (RCOSC_LF)
Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.
MIN
TYP
Calibrated frequency
Calibrated
RTC
variation(1)
Calibrated periodically against XOSC_HF(2)
Temperature coefficient.
(1)
MAX
UNIT
32.8
kHz
±600(3)
ppm
50
ppm/°C
When using RCOSC_LF as source for the low frequency system clock (SCLK_LF), the accuracy of the SCLK_LF-derived Real Time
Clock (RTC) can be improved by measuring RCOSC_LF relative to XOSC_HF and compensating for the RTC tick speed. This
functionality is available through the TI-provided Power driver.
TI driver software calibrates the RTC every time XOSC_HF is enabled.
Some device's variation can exceed 1000 ppm. Further calibration will not improve variation.
(2)
(3)
8.14.4 Synchronous Serial Interface (SSI) Characteristics
8.14.4.1 Synchronous Serial Interface (SSI) Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
NO.
PARAMETER
MIN
TYP
UNIT
65024
System Clocks (2)
S1
tclk_per
SSIClk cycle time
S2(1)
tclk_high
SSIClk high time
0.5
tclk_per
S3(1)
tclk_low
SSIClk low time
0.5
tclk_per
(1)
(2)
12
MAX
Refer to SSI timing diagrams Figure 8-1, Figure 8-2, and Figure 8-3.
When using the TI-provided Power driver, the SSI system clock is always 48 MHz.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
21
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
S1
S2
SSIClk
S3
SSIFss
SSITx
SSIRx
MSB
LSB
4 to 16 bits
Figure 8-1. SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement
S2
S1
SSIClk
S3
SSIFss
SSITx
MSB
LSB
8-bit control
SSIRx
0
MSB
LSB
4 to 16 bits output data
Figure 8-2. SSI Timing for MICROWIRE Frame Format (FRF = 10), Single Transfer
22
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
S1
S2
SSIClk
(SPO = 0)
S3
SSIClk
(SPO = 1)
SSITx
(Master)
MSB
SSIRx
(Slave)
MSB
LSB
LSB
SSIFss
Figure 8-3. SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1
8.14.5 UART
8.14.5.1 UART Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
UART rate
TYP
MAX
3
UNIT
MBaud
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
23
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.15 Peripheral Characteristics
8.15.1 ADC
8.15.1.1 Analog-to-Digital Converter (ADC) Characteristics
Tc = 25 °C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.(1)
Performance numbers require use of offset and gain adjustements in software by TI-provided ADC drivers.
PARAMETER
TEST CONDITIONS
Input voltage range
MIN
TYP
0
Resolution
–0.24
LSB
Internal 4.3 V equivalent reference(2)
7.14
LSB
>–1
LSB
±4
LSB
Integral nonlinearity
Internal 4.3 V equivalent reference(2), 200 kSamples/s,
9.6 kHz input tone
reference(2),
Internal 4.3 V equivalent
9.6 kHz input tone, DC/DC enabled
Effective number of bits
Total harmonic distortion
Signal-to-noise
and
distortion ratio
Spurious-free dynamic range
200 kSamples/s,
9.8
9.8
VDDS as reference, 200 kSamples/s, 9.6 kHz input tone
10.1
Internal reference, voltage scaling disabled,
32 samples average (software), 200 kSamples/s, 300 Hz input
tone
11.1
Internal reference, voltage scaling disabled,
14-bit mode, 200 kSamples/s, 300 Hz input tone (5)
11.3
Internal reference, voltage scaling disabled,
15-bit mode, 200 kSamples/s, 300 Hz input tone (5)
11.6
Internal 4.3 V equivalent reference(2), 200 kSamples/s,
9.6 kHz input tone
–65
VDDS as reference, 200 kSamples/s, 9.6 kHz input tone
–70
Internal reference, voltage scaling disabled,
32 samples average, 200 kSamples/s, 300 Hz input tone
–72
Internal 4.3 V equivalent reference(2), 200 kSamples/s,
9.6 kHz input tone
60
VDDS as reference, 200 kSamples/s, 9.6 kHz input tone
63
Internal reference, voltage scaling disabled,
32 samples average (software), 200 kSamples/s, 300 Hz input
tone
68
Internal 4.3 V equivalent reference(2), 200 kSamples/s,
9.6 kHz input tone
70
VDDS as reference, 200 kSamples/s, 9.6 kHz input tone
73
Internal reference, voltage scaling disabled,
32 samples average (software), 200 kSamples/s, 300 Hz input
tone
75
50
Bits
dB
dB
dB
Conversion time
Serial conversion, time-to-output, 24 MHz clock
Current consumption
Internal 4.3 V equivalent reference(2)
0.39
mA
Current consumption
VDDS as reference
0.56
mA
Reference voltage
Equivalent fixed internal reference (input voltage scaling
enabled). For best accuracy, the ADC conversion should be
initiated through the TI-RTOS API in order to include the gain/
offset compensation factors stored in FCFG1
Reference voltage
Fixed internal reference (input voltage scaling disabled).
For best accuracy, the ADC conversion should be initiated
through the TI-RTOS API in order to include the gain/offset
compensation factors stored in FCFG1. This value is derived
from the scaled value (4.3 V) as follows:
Vref = 4.3 V × 1408 / 4095
Reference voltage
Reference voltage
24
ksps
Gain error
INL
SFDR
Bits
200
Internal 4.3 V equivalent reference(2)
Differential nonlinearity
SINAD,
SNDR
V
Offset
DNL(4)
THD
UNIT
12
Sample Rate
ENOB
MAX
VDDS
Clock Cycles
4.3(2) (3)
V
1.48
V
VDDS as reference, input voltage scaling enabled
VDDS
V
VDDS as reference, input voltage scaling disabled
VDDS /
2.82(3)
V
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.15.1.1 Analog-to-Digital Converter (ADC) Characteristics (continued)
Tc = 25 °C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.(1)
Performance numbers require use of offset and gain adjustements in software by TI-provided ADC drivers.
PARAMETER
Input impedance
(1)
(2)
(3)
(4)
(5)
TEST CONDITIONS
MIN
200 kSamples/s, voltage scaling enabled. Capacitive input,
Input impedance depends on sampling frequency and sampling
time
TYP
MAX
>1
UNIT
MΩ
Using IEEE Std 1241-2010 for terminology and test methods
Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V
Applied voltage must be within Absolute Maximum Ratings at all times
No missing codes
ADC_output = Σ(4n samples ) >> n, n = desired extra bits
8.15.2 DAC
8.15.2.1 Digital-to-Analog Converter (DAC) Characteristics
Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
General Parameters
Resolution
VDDS
FDAC
Supply voltage
Clock frequency
Voltage output settling time
8
1.8
3.8
External Load(4), any VREF, pre-charge OFF, DAC charge-pump
OFF
2.0
3.8
Any load, VREF = DCOUPL, pre-charge ON
2.6
3.8
Buffer ON (recommended for external load)
16
250
Buffer OFF (internal load)
16
1000
VREF = VDDS, buffer OFF, internal load
VREF = VDDS, buffer ON, external capacitive load = 20
13
pF(3)
20
External resistive load
200
10
kHz
pF
MΩ
Short circuit current
400
VDDS = 3.8 V, DAC charge-pump OFF
50.8
VDDS = 3.0 V, DAC charge-pump ON
51.7
VDDS = 3.0 V, DAC charge-pump OFF
53.2
Max output impedance Vref =
VDDS, buffer ON, CLK 250
VDDS = 2.0 V, DAC charge-pump ON
kHz
VDDS = 2.0 V, DAC charge-pump OFF
V
1 / FDAC
13.8
External capacitive load
ZMAX
Bits
Any load, any VREF, pre-charge OFF, DAC charge-pump ON
48.7
µA
kΩ
70.2
VDDS = 1.8 V, DAC charge-pump ON
46.3
VDDS = 1.8 V, DAC charge-pump OFF
88.9
Internal Load - Continuous Time Comparator / Low Power Clocked Comparator
Differential nonlinearity
VREF = VDDS,
load = Continuous Time Comparator or Low Power Clocked
Comparator
FDAC = 250 kHz
±1
Differential nonlinearity
VREF = VDDS,
load = Continuous Time Comparator or Low Power Clocked
Comparator
FDAC = 16 kHz
±1.2
DNL
Offset error(2)
Load = Continuous Time
Comparator
LSB(1)
VREF = VDDS = 3.8 V
±0.64
VREF = VDDS= 3.0 V
±0.81
VREF = VDDS = 1.8 V
±1.27
VREF = DCOUPL, pre-charge ON
±3.43
VREF = DCOUPL, pre-charge OFF
±2.88
VREF = ADCREF
±2.37
LSB(1)
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
25
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.15.2.1 Digital-to-Analog Converter (DAC) Characteristics (continued)
Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
Offset error(2)
Load = Low Power Clocked
Comparator
Max code output voltage
variation(2)
Load = Continuous Time
Comparator
Max code output voltage
variation(2)
Load = Low Power Clocked
Comparator
Output voltage range(2)
Load = Continuous Time
Comparator
Output voltage range(2)
Load = Low Power Clocked
Comparator
TEST CONDITIONS
MIN
TYP
VREF = VDDS= 3.8 V
±0.78
VREF = VDDS = 3.0 V
±0.77
VREF = VDDS= 1.8 V
±3.46
VREF = DCOUPL, pre-charge ON
±3.44
VREF = DCOUPL, pre-charge OFF
±4.70
VREF = ADCREF
±4.11
VREF = VDDS = 3.8 V
±1.53
VREF = VDDS = 3.0 V
±1.71
VREF = VDDS= 1.8 V
±2.10
VREF = DCOUPL, pre-charge ON
±6.00
VREF = DCOUPL, pre-charge OFF
±3.85
VREF = ADCREF
±5.84
VREF = VDDS= 3.8 V
±2.92
VREF =VDDS= 3.0 V
±3.06
VREF = VDDS= 1.8 V
±3.91
VREF = DCOUPL, pre-charge ON
±7.84
VREF = DCOUPL, pre-charge OFF
±4.06
VREF = ADCREF
±6.94
VREF = VDDS = 3.8 V, code 1
0.03
VREF = VDDS = 3.8 V, code 255
3.62
VREF = VDDS= 3.0 V, code 1
0.02
VREF = VDDS= 3.0 V, code 255
2.86
VREF = VDDS= 1.8 V, code 1
0.01
VREF = VDDS = 1.8 V, code 255
1.71
VREF = DCOUPL, pre-charge OFF, code 1
0.01
VREF = DCOUPL, pre-charge OFF, code 255
1.21
VREF = DCOUPL, pre-charge ON, code 1
1.27
VREF = DCOUPL, pre-charge ON, code 255
2.46
VREF = ADCREF, code 1
0.01
VREF = ADCREF, code 255
1.41
VREF = VDDS = 3.8 V, code 1
0.03
VREF = VDDS= 3.8 V, code 255
3.61
VREF = VDDS= 3.0 V, code 1
0.02
VREF = VDDS= 3.0 V, code 255
2.85
VREF = VDDS = 1.8 V, code 1
0.01
VREF = VDDS = 1.8 V, code 255
1.71
VREF = DCOUPL, pre-charge OFF, code 1
0.01
VREF = DCOUPL, pre-charge OFF, code 255
1.21
VREF = DCOUPL, pre-charge ON, code 1
1.27
VREF = DCOUPL, pre-charge ON, code 255
2.46
VREF = ADCREF, code 1
0.01
VREF = ADCREF, code 255
1.41
MAX
UNIT
LSB(1)
LSB(1)
LSB(1)
V
V
External Load (Keysight 34401A Multimeter)
INL
Integral nonlinearity
DNL
Differential nonlinearity
26
VREF = VDDS, FDAC = 250 kHz
±1
VREF = DCOUPL, FDAC = 250 kHz
±1
VREF = ADCREF, FDAC = 250 kHz
±1
VREF = VDDS, FDAC = 250 kHz
±1
Submit Document Feedback
LSB(1)
LSB(1)
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.15.2.1 Digital-to-Analog Converter (DAC) Characteristics (continued)
Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
Offset error
Max code output voltage
variation
Output voltage range
Load = Low Power Clocked
Comparator
(1)
(2)
(3)
(4)
TEST CONDITIONS
MIN
TYP
VREF = VDDS= 3.8 V
±0.20
VREF = VDDS= 3.0 V
±0.25
VREF = VDDS = 1.8 V
±0.45
VREF = DCOUPL, pre-charge ON
±1.55
VREF = DCOUPL, pre-charge OFF
±1.30
VREF = ADCREF
±1.10
VREF = VDDS= 3.8 V
±0.60
VREF = VDDS= 3.0 V
±0.55
VREF = VDDS= 1.8 V
±0.60
VREF = DCOUPL, pre-charge ON
±3.45
VREF = DCOUPL, pre-charge OFF
±2.10
VREF = ADCREF
±1.90
VREF = VDDS = 3.8 V, code 1
0.03
VREF = VDDS = 3.8 V, code 255
3.61
VREF = VDDS = 3.0 V, code 1
0.02
VREF = VDDS= 3.0 V, code 255
2.85
VREF = VDDS= 1.8 V, code 1
0.02
VREF = VDDS = 1.8 V, code 255
1.71
VREF = DCOUPL, pre-charge OFF, code 1
0.02
VREF = DCOUPL, pre-charge OFF, code 255
1.20
VREF = DCOUPL, pre-charge ON, code 1
1.27
VREF = DCOUPL, pre-charge ON, code 255
2.46
VREF = ADCREF, code 1
0.02
VREF = ADCREF, code 255
1.42
MAX
UNIT
LSB(1)
LSB(1)
V
1 LSB (VREF 3.8 V/3.0 V/1.8 V/DCOUPL/ADCREF) = 14.10 mV/11.13 mV/6.68 mV/4.67 mV/5.48 mV
Includes comparator offset
A load > 20 pF will increases the settling time
Keysight 34401A Multimeter
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
27
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.15.3 Temperature and Battery Monitor
8.15.3.1 Temperature Sensor
Measured on a Texas Instruments reference design with Tc = 25 °C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
Resolution
MAX
UNIT
2
°C
Accuracy
-40 °C to 0 °C
±4.0
°C
Accuracy
0 °C to 105 °C
±2.5
°C
3.9
°C/V
Supply voltage
(1)
coefficient(1)
The temperature sensor is automatically compensated for VDDS variation when using the TI-provided driver.
8.15.3.2 Battery Monitor
Measured on a Texas Instruments reference design with Tc = 25 °C, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
Resolution
TYP
MAX
25
Range
mV
1.8
Integral nonlinearity (max)
Accuracy
VDDS = 3.0 V
UNIT
3.8
V
23
mV
22.5
mV
Offset error
-32
mV
Gain error
-1
%
8.15.4 Comparator
8.15.4.1 Continuous Time Comparator
Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
Input voltage range(1)
TYP
0
Offset
Measured at VDDS / 2
Decision time
Step from –10 mV to 10 mV
Current consumption
Internal reference
(1)
MIN
MAX
UNIT
VDDS
V
±5
mV
0.78
µs
9.2
µA
The input voltages can be generated externally and connected throughout I/Os or an internal reference voltage can be generated using
the DAC
8.15.5 GPIO
8.15.5.1 GPIO DC Characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TA = 25 °C, VDDS = 1.8 V
GPIO VOH at 8 mA load
IOCURR = 2, high-drive GPIOs only
1.56
V
GPIO VOL at 8 mA load
IOCURR = 2, high-drive GPIOs only
0.24
V
GPIO VOH at 4 mA load
IOCURR = 1
1.59
V
GPIO VOL at 4 mA load
IOCURR = 1
0.21
V
GPIO pullup current
Input mode, pullup enabled, Vpad = 0 V
73
µA
GPIO pulldown current
Input mode, pulldown enabled, Vpad = VDDS
19
µA
GPIO low-to-high input transition, with hysteresis
IH = 1, transition voltage for input read as 0 → 1
1.08
V
GPIO high-to-low input transition, with hysteresis
IH = 1, transition voltage for input read as 1 → 0
0.73
V
GPIO input hysteresis
IH = 1, difference between 0 → 1
and 1 → 0 points
0.35
V
GPIO VOH at 8 mA load
IOCURR = 2, high-drive GPIOs only
2.59
V
GPIO VOL at 8 mA load
IOCURR = 2, high-drive GPIOs only
0.42
V
GPIO VOH at 4 mA load
IOCURR = 1
2.63
V
GPIO VOL at 4 mA load
IOCURR = 1
0.40
V
TA = 25 °C, VDDS = 3.0 V
28
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.15.5.1 GPIO DC Characteristics (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TA = 25 °C, VDDS = 3.8 V
GPIO pullup current
Input mode, pullup enabled, Vpad = 0 V
282
µA
GPIO pulldown current
Input mode, pulldown enabled, Vpad = VDDS
110
µA
GPIO low-to-high input transition, with hysteresis
IH = 1, transition voltage for input read as 0 → 1
1.97
V
GPIO high-to-low input transition, with hysteresis
IH = 1, transition voltage for input read as 1 → 0
1.55
V
GPIO input hysteresis
IH = 1, difference between 0 → 1
and 1 → 0 points
0.42
V
TA = 25 °C
VIH
Lowest GPIO input voltage reliably interpreted as a
High
VIL
Highest GPIO input voltage reliably interpreted as a
Low
0.8*VDDS
V
0.2*VDDS
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
V
29
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.16 Typical Characteristics
All measurements in this section are done with Tc = 25 °C and VDDS = 3.0 V, unless otherwise noted. See
Recommended Operating Conditions, Section 8.3, for device limits. Values exceeding these limits are for
reference only.
8.16.1 MCU Current
Figure 8-4. Active Mode (MCU) Current vs. Supply
Voltage (VDDS)
Figure 8-5. Standby Mode (MCU) Current vs.
Temperature
8.16.2 RX Current
Figure 8-6. RX Current vs. Temperature (BLE 1
Mbps, 2.44 GHz)
30
Figure 8-7. RX Current vs. Supply Voltage (VDDS)
(BLE 1 Mbps, 2.44 GHz)
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.16.3 TX Current
TX Current vs. Temperature
TX Current vs. VDDS
Bluetooth Low Energy 1 Mbps, 2.44 GHz, +10 dBm
Bluetooth Low Energy 1 Mbps 2.44GHz, + 10 dBm PA
25
45
24
40
35
Current [mA]
Current [mA]
23
22
21
20
30
25
20
19
15
18
17
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
10
1.8
2
2.2
2.4
2.6
Figure 8-8. TX Current vs. Temperature (BLE 1
Mbps, 2.44 GHz)
2.8
3
3.2
3.4
3.6
3.8
Voltage [V]
Temperature [C]
Figure 8-9. TX Current vs. Supply Voltage (VDDS)
(BLE 1 Mbps, 2.44 GHz)
Table 8-1 shows typical TX current and output power for different output power settings.
Table 8-1. Typical TX Current and Output Power
CC2651R3 at 2.4 GHz, VDDS = 3.0 V (Measured on CC26x1-R3EM-7ID)
txPower
TX Power Setting (SmartRF Studio)
Typical Output Power [dBm]
Typical Current Consumption [mA]
0x701F
5
5.5
12.5
0x3A17
4
4.5
11.9
0x3A64
3
3.1
11.2
0x325F
2
2.0
10.8
0x2C5C
1
1.3
10.5
0x2659
0
0.4
10.2
0x1697
-3
-2.8
9.4
0x1693
-5
-4.8
8.9
0x1292
-6
-5.4
8.8
0xCD3
-9
-9.0
8.4
0xAD1
-10
-10.4
8.2
0xACF
-12
-12.0
8.1
0x6CD
-15
-13.7
7.9
0x6CA
-18
-16.8
7.7
0x4C8
-20
-19.3
7.6
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
31
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
Sensitivity vs. Frequency
Sensitivity vs. Frequency
BLE 1 Mbps, 2.44 GHz
IEEE 802.15.4 (OQPSK DSSS1:8, 250 kbps)
-92
-95
-93
-96
-94
-97
-95
-98
Sensitivity [dBm ]
Sensitivity [dBm]
8.16.4 RX Performance
-96
-97
-98
-99
-100
-104
-102
2.4
-105
2.4
2.408
2.416
2.424
2.432
2.44
2.448
2.456
2.464
2.472
2.48
2.432
2.44
2.448
2.456
2.464
2.472
Sensitivity vs. Temperature
BLE 1 Mbps, 2.44 GHz
IEEE 802.15.4 (OQPSK DSSS1:8, 250 kbps), 2.44 GHz
-96
-94
-97
-95
-98
-96
-97
-98
-99
-99
-100
-101
-102
-100
-103
-101
-104
-10
0
10
20
30
40
50
60
70
80
90
Temperature [°C]
-105
-40
100
-30
-20
-10
0
10
20
30
40
50
60
70
Sensitivity vs. VDDS
BLE 1 Mbps, 2.44 GHz, DCDC Off
-92
-93
-93
-94
-94
-95
-95
Sensitivity [dBm]
-92
-98
-99
-100
100
D032
BLE 1 Mbps, 2.44 GHz
-97
90
Figure 8-13. Sensitivity vs. Temperature (250 kbps,
2.44 GHz)
Sensitivity vs. VDDS
-96
80
Temperature [°C]
D031
Figure 8-12. Sensitivity vs. Temperature (BLE 1
Mbps, 2.44 GHz)
2.48
D029
Sensitivity vs. Temperature
-95
-20
2.424
Figure 8-11. Sensitivity vs. Frequency (250 kbps,
2.44 GHz)
-93
-30
2.416
Frequency [GHz]
-92
-102
-40
2.408
D028
Sensitivity [dBm]
Sensitivity [dBm]
-102
-103
Figure 8-10. Sensitivity vs. Frequency (BLE 1
Mbps, 2.44 GHz)
Sensitivity [dBm]
-101
-101
Frequency [GHz]
-96
-97
-98
-99
-100
-101
-101
-102
1.8
-102
1.8
2
2.2
2.4
2.6
2.8
Voltage [V]
3
3.2
3.4
3.6
3.8
2
2.2
2.4
2.6
2.8
Voltage [V]
D034
Figure 8-14. Sensitivity vs. Supply Voltage (VDDS)
(BLE 1 Mbps, 2.44 GHz)
32
-99
-100
3
3.2
3.4
3.6
3.8
D035
Figure 8-15. Sensitivity vs. Supply Voltage (VDDS)
(BLE 1 Mbps, 2.44 GHz, DCDC Off)
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
Sensitivity vs. VDDS
IEEE 802.15.4 (OQPSK DSSS1:8, 250 kbps), 2.44 GHz
-95
-96
Sensitivity [dBm ]
-97
-98
-99
-100
-101
-102
-103
-104
-105
1.8
2
2.2
2.4
2.6
2.8
3
3.2
Voltage [V]
3.4
3.6
3.8
D036
Figure 8-16. Sensitivity vs. Supply Voltage (VDDS) (250 kbps, 2.44 GHz)
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
33
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.16.5 TX Performance
Output Power vs. Temperature
Output Power vs. Temperature
BLE 1 Mbps, 2.44 GHz, +5 dBm
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
-40
Output Power [dBm]
Output Power [dBm]
BLE 1 Mbps, 2.44 GHz, 0 dBm
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
Temperature [°C]
100
7
6.8
6.6
6.4
6.2
6
5.8
5.6
5.4
5.2
5
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
-40
-30
-20
-10
0
Figure 8-17. Output Power vs. Temperature (BLE 1
Mbps, 2.44 GHz)
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
Output Power [dBm]
7
6.8
6.6
6.4
6.2
6
5.8
5.6
5.4
5.2
5
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
1.8
2
2.2
2.44
2.448
Output Power [dBm]
Frequency [GHz]
2.456
90
100
D042
2.6
2.8
3
3.2
3.4
3.6
3.8
D048
BLE 1 Mbps, 2.44 GHz, +5 dBm
2.464
2.472
2.48
7
6.8
6.6
6.4
6.2
6
5.8
5.6
5.4
5.2
5
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.4
2.408
2.416
2.424
2.432
2.44
2.448
Frequency [GHz]
D058
Figure 8-21. Output Power vs. Frequency (BLE 1
Mbps, 2.44 GHz)
34
80
Output Power vs. Frequency
Output Power [dBm]
2.432
70
Figure 8-20. Output Power vs. Supply Voltage
(VDDS) (BLE 1 Mbps, 2.44 GHz, +5 dBm)
BLE 1 Mbps, 2.44 GHz, 0 dBm
2.424
60
Voltage [V]
Output Power vs. Frequency
2.416
2.4
D046
Figure 8-19. Output Power vs. Supply Voltage
(VDDS) (BLE 1 Mbps, 2.44 GHz)
2.408
50
BLE 1 Mbps, 2.44 GHz, +5 dBm
Voltage [V]
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
2.4
40
Output power vs. VDDS
Output Power [dBm]
2.2
30
Figure 8-18. Output Power vs. Temperature (BLE 1
Mbps, 2.44 GHz, +5 dBm)
BLE 1 Mbps, 2.44 GHz, 0 dBm
2
20
Temperature [°C]
Output Power vs. VDDS
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
-2
1.8
10
D041
2.456
2.464
2.472
2.48
D059
Figure 8-22. Output Power vs. Frequency (BLE 1
Mbps, 2.44 GHz, +5 dBm)
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
8.16.6 ADC Performance
ENOB vs. Input Frequency
ENOB vs. Sampling Frequency
Vin = 3.0 V Sine wave, Internal reference,
Fin = Fs / 10
11.4
Internal Reference, No Averaging
Internal Unscaled Reference, 14-bit Mode
10.2
11.1
10.15
10.1
ENOB [Bit]
ENOB [Bit]
10.8
10.5
10.2
10.05
10
9.95
9.9
9.9
9.85
9.6
0.2
9.8
0.3
0.5 0.7
1
2
3
4 5 6 7 8 10
20
30 40 50
1
70 100
Frequency [kHz]
4 5 6 7 8 10
20
30 40 50
70
100
200
D062
Figure 8-24. ENOB vs. Sampling Frequency
INL vs. ADC Code
DNL vs. ADC Code
Vin = 3.0 V Sine wave, Internal reference,
200 kSamples/s
Vin = 3.0 V Sine wave, Internal reference,
200 kSamples/s
1.5
2.5
1
2
0.5
1.5
DNL [LSB]
INL [LSB]
3
Frequency [kHz]
Figure 8-23. ENOB vs. Input Frequency
0
1
-0.5
0.5
-1
0
-1.5
-0.5
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
ADC Code
0
1200
1600
2000
2400
2800
3200
ADC Accuracy vs. VDDS
Vin = 1 V, Internal reference,
200 kSamples/s
Vin = 1 V, Internal reference,
200 kSamples/s
1.008
1.008
1.007
1.007
Voltage [V]
1.01
1.009
1.006
1.005
1.004
1.006
1.005
1.004
1.003
1.003
1.002
1.002
1.001
1.001
-10
0
10
20
30
40
50
60
70
80
4000
D065
ADC Accuracy vs. Temperature
-20
3600
Figure 8-26. DNL vs. ADC Code
1.01
-30
800
ADC Code
1.009
1
-40
400
D064
Figure 8-25. INL vs. ADC Code
Voltage [V]
2
D061
90
1
1.8
100
Temperature [°C]
2
Figure 8-27. ADC Accuracy vs. Temperature
2.2
2.4
2.6
2.8
Voltage [V]
D066
3
3.2
3.4
3.6
3.8
D067
Figure 8-28. ADC Accuracy vs. Supply Voltage
(VDDS)
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
35
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
9 Detailed Description
9.1 Overview
Section 4 shows the core modules of the CC2651R3 device.
9.2 System CPU
The CC2651R3 SimpleLink™ Wireless MCU contains an Arm® Cortex®-M4 system CPU, which runs the
application and the higher layers of radio protocol stacks.
The system CPU is the foundation of a high-performance, low-cost platform that meets the system requirements
of minimal memory implementation, and low-power consumption, while delivering outstanding computational
performance and exceptional system response to interrupts.
Its features include the following:
• ARMv7-M architecture optimized for small-footprint embedded applications
• Arm Thumb®-2 mixed 16- and 32-bit instruction set delivers the high performance expected of a 32-bit Arm
core in a compact memory size
• Fast code execution permits increased sleep mode time
• Deterministic, high-performance interrupt handling for time-critical applications
• Single-cycle multiply instruction and hardware divide
• Hardware division and fast digital-signal-processing oriented multiply accumulate
• Saturating arithmetic for signal processing
• Full debug with data matching for watchpoint generation
– Data Watchpoint and Trace Unit (DWT)
– JTAG Debug Access Port (DAP)
– Flash Patch and Breakpoint Unit (FPB)
• Trace support reduces the number of pins required for debugging and tracing
– Instrumentation Trace Macrocell Unit (ITM)
– Trace Port Interface Unit (TPIU) with asynchronous serial wire output (SWO)
• Optimized for single-cycle flash memory access
• Tightly connected to 8-KB 4-way random replacement cache for minimal active power consumption and wait
states
• Ultra-low-power consumption with integrated sleep modes
• 48 MHz operation
• 1.25 DMIPS per MHz
36
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
9.3 Radio (RF Core)
The RF Core is a highly flexible and future proof radio module which contains an Arm Cortex-M0 processor
that interfaces the analog RF and base-band circuitry, handles data to and from the system CPU side, and
assembles the information bits in a given packet structure. The RF core offers a high level, command-based
API to the main CPU that configurations and data are passed through. The Arm Cortex-M0 processor is not
programmable by customers and is interfaced through the TI-provided RF driver that is included with the
SimpleLink Software Development Kit (SDK).
The RF core can autonomously handle the time-critical aspects of the radio protocols, thus offloading the
main CPU, which reduces power and leaves more resources for the user application. Several signals are also
available to control external circuitry such as RF switches or range extenders autonomously.
The various physical layer radio formats are partly built as a software defined radio where the radio behavior is
either defined by radio ROM contents or by non-ROM radio formats delivered in form of firmware patches with
the SimpleLink SDKs. This allows the radio platform to be updated for support of future versions of standards
even with over-the-air (OTA) updates while still using the same silicon.
9.3.1 Bluetooth 5.2 Low Energy
The RF Core offers full support for Bluetooth 5.2 Low Energy, including the high-sped 2-Mbps physical layer
and the 500-kbps and 125-kbps long range PHYs (Coded PHY) through the TI provided Bluetooth 5.2 stack or
through a high-level Bluetooth API. The Bluetooth 5.2 PHY and part of the controller are in radio and system
ROM, providing significant savings in memory usage and more space available for applications.
The new high-speed mode allows data transfers up to 2 Mbps, twice the speed of Bluetooth 4.2 and five times
the speed of Bluetooth 4.0, without increasing power consumption. In addition to faster speeds, this mode offers
significant improvements for energy efficiency and wireless coexistence with reduced radio communication time.
Bluetooth 5.2 also enables unparalleled flexibility for adjustment of speed and range based on application
needs, which capitalizes on the high-speed or long-range modes respectively. Data transfers are now possible
at 2 Mbps, enabling development of applications using voice, audio, imaging, and data logging that were not
previously an option using Bluetooth low energy. With high-speed mode, existing applications deliver faster
responses, richer engagement, and longer battery life. Bluetooth 5.2 enables fast, reliable firmware updates.
9.3.2 802.15.4 (Zigbee and 6LoWPAN)
Through a dedicated IEEE radio API, the RF Core supports the 2.4-GHz IEEE 802.15.4-2011 physical layer (2
Mchips per second Offset-QPSK with DSSS 1:8), used in Zigbee and 6LoWPAN protocols. The 802.15.4 PHY
and MAC are in radio and system ROM. TI also provides royalty-free protocol stacks for Zigbee as part of the
SimpleLink SDK, enabling a robust end-to-end solution.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
37
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
9.4 Memory
The up to 352-KB nonvolatile (Flash) memory provides storage for code and data. The flash memory is
in-system programmable and erasable. The last flash memory sector must contain a Customer Configuration
section (CCFG) that is used by boot ROM and TI provided drivers to configure the device. This configuration is
done through the ccfg.c source file that is included in all TI provided examples.
The ultra-low leakage system static RAM (SRAM) is a single 32-KB block and can be used for both storage
of data and execution of code. Retention of SRAM contents in Standby power mode is enabled by default and
included in Standby mode power consumption numbers.
To improve code execution speed and lower power when executing code from nonvolatile memory, a 4-way
nonassociative 8-KB cache is enabled by default to cache and prefetch instructions read by the system CPU.
The cache can be used as a general-purpose RAM by enabling this feature in the Customer Configuration Area
(CCFG).
The ROM contains a serial (SPI and UART) bootloader that can be used for initial programming of the device.
38
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
9.5 Cryptography
The CC2651R3 device comes with a wide set of cryptography-related hardware accelerators, reducing code
footprint and execution time for cryptographic operations. It also has the benefit of being lower power
and improves availability and responsiveness of the system because the cryptography operations run in a
background hardware thread.
The hardware accelerator modules are:
• True Random Number Generator (TRNG) module provides a true, nondeterministic noise source for the
purpose of generating keys, initialization vectors (IVs), and other random number requirements. The TRNG is
built on 24 ring oscillators that create unpredictable output to feed a complex nonlinear-combinatorial circuit.
• Advanced Encryption Standard (AES) with 128 bit key lengths
Together with the hardware accelerator module, a large selection of open-source cryptography libraries provided
with the Software Development Kit (SDK), this allows for secure and future proof IoT applications to be easily
built on top of the platform. The TI provided cryptography drivers are:
• Key Agreement Schemes
– Elliptic curve Diffie–Hellman with static or ephemeral keys (ECDH and ECDHE)
• Signature Generation
– Elliptic curve Diffie-Hellman Digital Signature Algorithm (ECDSA)
• Curve Support
– Short Weierstrass form (full hardware support), such as:
• NIST-P256
– Montgomery form (hardware support for multiplication), such as:
• Curve25519
• Hash
– SHA256
• MACs
– HMAC with SHA256
– AES CBC-MAC
• Block ciphers
– AESECB
– AESCBC
– AESCTR
• Authenticated Encryption
– AESCCM
• Random number generation
– True Random Number Generator
– AES CTR DRBG
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
39
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
9.6 Timers
A large selection of timers are available as part of the CC2651R3 device. These timers are:
• Real-Time Clock (RTC)
•
A 70-bit 3-channel timer running on the 32 kHz low frequency system clock (SCLK_LF)
This timer is available in all power modes except Shutdown. The timer can be calibrated to compensate for
frequency drift when using the LF RCOSC as the low frequency system clock. If an external LF clock with
frequency different from 32.768 kHz is used, the RTC tick speed can be adjusted to compensate for this.
When using TI-RTOS, the RTC is used as the base timer in the operating system and should thus only be
accessed through the kernel APIs such as the Clock module. By default, the RTC halts when a debugger
halts the device.
General Purpose Timers (GPTIMER)
•
The four flexible GPTIMERs can be used as either 4× 32 bit timers or 8× 16 bit timers, all running on up to 48
MHz. Each of the 16- or 32-bit timers support a wide range of features such as one-shot or periodic counting,
pulse width modulation (PWM), time counting between edges and edge counting. The inputs and outputs of
the timer are connected to the device event fabric, which allows the timers to interact with signals such as
GPIO inputs, other timers, DMA and ADC. The GPTIMERs are available in Active and Idle power modes.
Radio Timer
•
A multichannel 32-bit timer running at 4 MHz is available as part of the device radio. The radio timer is
typically used as the timing base in wireless network communication using the 32-bit timing word as the
network time. The radio timer is synchronized with the RTC by using a dedicated radio API when the device
radio is turned on or off. This ensures that for a network stack, the radio timer seems to always be running
when the radio is enabled. The radio timer is in most cases used indirectly through the trigger time fields
in the radio APIs and should only be used when running the accurate 48 MHz high frequency crystal is the
source of SCLK_HF.
Watchdog timer
The watchdog timer is used to regain control if the system operates incorrectly due to software errors. It is
typically used to generate an interrupt to and reset of the device for the case where periodic monitoring of the
system components and tasks fails to verify proper functionality. The watchdog timer runs on a 1.5 MHz clock
rate and cannot be stopped once enabled. The watchdog timer pauses to run in Standby power mode and
when a debugger halts the device.
40
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
9.7 Serial Peripherals and I/O
The SSI is a synchronous serial interface that is compatible with SPI, MICROWIRE, and TI's synchronous serial
interfaces. The SSI support both SPI master and slave up to 4 MHz. The SSI module support configurable phase
and polarity.
The UART implement universal asynchronous receiver and transmitter functions. It support flexible baud-rate
generation up to a maximum of 3 Mbps.
The I2S interface is used to handle digital audio and can also be used to interface pulse-density modulation
microphones (PDM).
The I2C interface is also used to communicate with devices compatible with the I2C standard. The I2C interface
can handle 100 kHz and 400 kHz operation, and can serve as both master and slave.
The I/O controller (IOC) controls the digital I/O pins and contains multiplexer circuitry to allow a set of peripherals
to be assigned to I/O pins in a flexible manner. All digital I/Os are interrupt and wake-up capable, have a
programmable pullup and pulldown function, and can generate an interrupt on a negative or positive edge
(configurable). When configured as an output, pins can function as either push-pull or open-drain. Five GPIOs
have high-drive capabilities, which are marked in bold in Section 7. All digital peripherals can be connected to
any digital pin on the device.
For more information, see the CC13x1x3, CC26x1x3 SimpleLink™ Wireless MCU Technical Reference Manual.
9.8 Battery and Temperature Monitor
A combined temperature and battery voltage monitor is available in the CC2651R3 device. The battery and
temperature monitor allows an application to continuously monitor on-chip temperature and supply voltage
and respond to changes in environmental conditions as needed. The module contains window comparators to
interrupt the system CPU when temperature or supply voltage go outside defined windows. These events can
also be used to wake up the device from Standby mode through the Always-On (AON) event fabric.
9.9 µDMA
The device includes a direct memory access (µDMA) controller. The µDMA controller provides a way to offload
data-transfer tasks from the system CPU, thus allowing for more efficient use of the processor and the available
bus bandwidth. The µDMA controller can perform a transfer between memory and peripherals. The µDMA
controller has dedicated channels for each supported on-chip module and can be programmed to automatically
perform transfers between peripherals and memory when the peripheral is ready to transfer more data.
Some features of the µDMA controller include the following (this is not an exhaustive list):
•
•
•
•
Highly flexible and configurable channel operation of up to 32 channels
Transfer modes: memory-to-memory, memory-to-peripheral, peripheral-to-memory, and
peripheral-to-peripheral
Data sizes of 8, 16, and 32 bits
Ping-pong mode for continuous streaming of data
9.10 Debug
The on-chip debug support is done through a dedicated cJTAG (IEEE 1149.7) or JTAG (IEEE 1149.1) interface.
The device boots by default into cJTAG mode and must be reconfigured to use 4-pin JTAG.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
41
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
9.11 Power Management
To minimize power consumption, the CC2651R3 supports a number of power modes and power management
features (see Table 9-1).
Table 9-1. Power Modes
MODE
SOFTWARE CONFIGURABLE POWER MODES
ACTIVE
IDLE
STANDBY
SHUTDOWN
RESET PIN
HELD
CPU
Active
Off
Off
Off
Off
Flash
On
Available
Off
Off
Off
SRAM
On
On
Retention
Off
Off
Supply System
On
On
Duty Cycled
Off
Off
Register and CPU retention
Full
Full
Partial
No
No
SRAM retention
Full
Full
Full
No
No
48 MHz high-speed clock
(SCLK_HF)
XOSC_HF or
RCOSC_HF
XOSC_HF or
RCOSC_HF
Off
Off
Off
32 kHz low-speed clock
(SCLK_LF)
XOSC_LF or
RCOSC_LF
XOSC_LF or
RCOSC_LF
XOSC_LF or
RCOSC_LF
Off
Off
Peripherals
Available
Available
Off
Off
Off
Wake-up on RTC
Available
Available
Available
Off
Off
Wake-up on pin edge
Available
Available
Available
Available
Off
Wake-up on reset pin
On
On
On
On
On
Brownout detector (BOD)
On
On
Duty Cycled
Off
Off
Power-on reset (POR)
On
On
On
Off
Off
Watchdog timer (WDT)
Available
Available
Paused
Off
Off
In Active mode, the application system CPU is actively executing code. Active mode provides normal operation
of the processor and all of the peripherals that are currently enabled. The system clock can be any available
clock source (see Table 9-1).
In Idle mode, all active peripherals can be clocked, but the Application CPU core and memory are not clocked
and no code is executed. Any interrupt event brings the processor back into active mode.
In Standby mode, only the always-on (AON) domain is active. An external wake-up event or RTC event is
required to bring the device back to active mode. MCU peripherals with retention do not need to be reconfigured
when waking up again, and the CPU continues execution from where it went into standby mode. All GPIOs are
latched in standby mode.
In Shutdown mode, the device is entirely turned off (including the AON domain), and the I/Os are latched with
the value they had before entering shutdown mode. A change of state on any I/O pin defined as a wake from
shutdown pin wakes up the device and functions as a reset trigger. The CPU can differentiate between reset in
this way and reset-by-reset pin or power-on reset by reading the reset status register. The only state retained in
this mode is the latched I/O state and the flash memory contents.
Note
The power, RF and clock management for the CC2651R3 device require specific configuration and
handling by software for optimized performance. This configuration and handling is implemented in
the TI-provided drivers that are part of the CC2651R3 software development kit (SDK). Therefore, TI
highly recommends using this software framework for all application development on the device. The
complete SDK with TI-RTOS (optional), device drivers, and examples are offered free of charge in
source code.
42
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
9.12 Clock Systems
The CC2651R3 device has several internal system clocks.
The 48 MHz SCLK_HF is used as the main system (MCU and peripherals) clock. This can be driven by
the internal 48 MHz RC Oscillator (RCOSC_HF) or an external 48 MHz crystal (XOSC_HF). Radio operation
requires an external 48 MHz crystal.
SCLK_LF is the 32.768 kHz internal low-frequency system clock. It can be used for the RTC and to synchronize
the radio timer before or after Standby power mode. SCLK_LF can be driven by the internal 32.8 kHz RC
Oscillator (RCOSC_LF), a 32.768 kHz watch-type crystal, or a clock input on any digital IO.
When using a crystal or the internal RC oscillator, the device can output the 32 kHz SCLK_LF signal to other
devices, thereby reducing the overall system cost.
9.13 Network Processor
Depending on the product configuration, the CC2651R3 device can function as a wireless network processor
(WNP - a device running the wireless protocol stack with the application running on a separate host MCU), or as
a system-on-chip (SoC) with the application and protocol stack running on the system CPU inside the device.
In the first case, the external host MCU communicates with the device using SPI or UART. In the second case,
the application must be written according to the application framework supplied with the wireless protocol stack.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
43
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
10 Application, Implementation, and Layout
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
For general design guidelines and hardware configuration guidelines, refer to CC13xx/CC26xx Hardware
Configuration and PCB Design Considerations Application Report.
10.1 Reference Designs
The following reference designs should be followed closely when implementing designs using the CC2651R3
device.
Special attention must be paid to RF component placement, decoupling capacitors and DCDC regulator
components, as well as ground connections for all of these.
CC26x1-R3EM-7ID
Design Files
The CC26x1-R3EM-7ID reference design provides schematic, layout and production
files for the characterization board used for deriving the performance number found in
this document.
CC26x1-P3EM-5XS24PA24_10dBm Design
Files
The CC26x1PEM-5XS24-PA24_10dBm reference design provides schematic, layout
and production files for the characterization board used for deriving the performance
number found in this document. This design is optimized for operating the high power
PA at 10 dBm output power and is using a single-ended front-end configuration with
external LNA bias for RX.
LP-CC2651P3 Design
Files
The CC2651P3 LaunchPad Design Files contain detailed schematics and layouts to
build application specific boards using the CC2651P3 device.
Sub-1 GHz and 2.4
GHz Antenna Kit for
LaunchPad™ Development
Kit and SensorTag
The antenna kit allows real-life testing to identify the optimal antenna for your
application. The antenna kit includes 16 antennas for frequencies from 169 MHz
to 2.4 GHz, including:
• PCB antennas
• Helical antennas
• Chip antennas
• Dual-band antennas for 868 MHz and 915 MHz combined with 2.4 GHz
The antenna kit includes a JSC cable to connect to the Wireless MCU LaunchPad
Development Kits and SensorTags.
44
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
10.2 Junction Temperature Calculation
This section shows the different techniques for calculating the junction temperature under various operating
conditions. For more details, see Semiconductor and IC Package Thermal Metrics.
There are three recommended ways to derive the junction temperature from other measured temperatures:
1. From package temperature:
T J = ψJT × P + Tcase
(1)
T J = ψJB × P + Tboard
(2)
T J = RθJA × P + TA
(3)
2. From board temperature:
3. From ambient temperature:
P is the power dissipated from the device and can be calculated by multiplying current consumption with supply
voltage. Thermal resistance coefficients are found in Thermal Resistance Characteristics.
Example:
Using Equation 3, the temperature difference between ambient temperature and junction temperature is
calculated. In this example, we assume a simple use case where the radio is transmitting continuously at 0 dBm
output power. Let us assume the ambient temperature is 85°C and the supply voltage is 3 V. To calculate P, we
need to look up the current consumption for Tx at 85°C in Figure 8-8. From the plot, we see that the current
consumption is 7.8 mA. This means that P is 7.8 mA × 3 V = 23.4 mW.
The junction temperature is then calculated as:
T J = 23.4°C W × 23.4mW + TA = 0.6°C + TA
(4)
As can be seen from the example, the junction temperature is 0.6 °C higher than the ambient temperature when
running continuous Tx at 85°C and, thus, well within the recommended operating conditions.
For various application use cases current consumption for other modules may have to be added to calculate the
appropriate power dissipation. For example, the MCU may be running simultaneously as the radio, peripheral
modules may be enabled, etc. Typically, the easiest way to find the peak current consumption, and thus the
peak power dissipation in the device, is to measure as described in Measuring CC13xx and CC26xx current
consumption.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
45
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
11 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed as follows.
11.1 Device Nomenclature
To designate the stages in the product development cycle, TI assigns prefixes to all part numbers and/or datecode. Each device has one of three prefixes/identifications: X, P, or null (no prefix) (for example, XCC2651R3 is
in preview; therefore, an X prefix/identification is assigned).
Device development evolutionary flow:
X
Experimental device that is not necessarily representative of the final device's electrical specifications and
may not use production assembly flow.
P
Prototype device that is not necessarily the final silicon die and may not necessarily meet final electrical
specifications.
null Production version of the silicon die that is fully qualified.
Support tool development evolutionary flow:
TMDX Development-support product that has not yet completed Texas Instruments internal qualification testing.
TMDS Fully-qualified development-support product.
X and P devices and TMDX development-support tools are shipped against the following disclaimer:
"Developmental product is intended for internal evaluation purposes."
Production devices and TMDS development-support tools have been characterized fully, and the quality and
reliability of the device have been demonstrated fully. TI's standard warranty applies.
Predictions show that prototype devices (X or P) have a greater failure rate than the standard production
devices. Texas Instruments recommends that these devices not be used in any production system because their
expected end-use failure rate still is undefined. Only qualified production devices are to be used.
TI device nomenclature also includes a suffix with the device family name. This suffix indicates the package type
(for example, RGZ).
For orderable part numbers of CC2651R3 devices in the RGZ (7-mm x 7-mm) package type, see the Package
Option Addendum of this document, the Device Information in Section 3, the TI website (www.ti.com), or contact
your TI sales representative.
CC2651
PREFIX
X = Experimental device
Blank = Qualified devie
DEVICE
SimpleLink™ Ultra-Low-Power
Wireless MCU
R
3
1
T
0
RGZ R
R = Large Reel
PACKAGE
RGZ = 48-pin VQFN (Very Thin Quad Flatpack No-Lead)
RKP = 40-pin VQFN (Very Thin Quad Flatpack No-Lead)
PRODUCT REVISION
CONFIGURATION
R = Regular
P = +20 dBm PA included
FLASH SIZE
3 = 352 kB
TEMPERATURE
T = 105C Ambient
SRAM SIZE
1 = 32kB
Figure 11-1. Device Nomenclature
46
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
11.2 Tools and Software
The CC2651R3 device is supported by a variety of software and hardware development tools.
Development Kit
CC2651P3
LaunchPad™
Development Kit
The CC2651P3 LaunchPad™ Development Kit enables development of high-performance
wireless applications that benefit from low-power operation. The kit features the
CC2651P3 SimpleLink Wireless MCU, which allows you to quickly evaluate and prototype
2.4-GHz wireless applications such as Bluetooth 5 Low Energy, Zigbee and Thread, plus
combinations of these. The kit works with the LaunchPad ecosystem, easily enabling
additional functionality like sensors, display and more.
Software
SimpleLink™
CC13XXCC26XX SDK
The SimpleLink CC13xx and CC26xx Software Development Kit (SDK) provides a complete
package for the development of wireless applications on the CC13XX / CC26XX family of
devices. The SDK includes a comprehensive software package for the CC2651R3 device,
including the following protocol stacks:
• Bluetooth Low Energy 4 and 5.2
• Thread (based on OpenThread)
• Zigbee 3.0
• Wi-SUN®
• TI 15.4-Stack - an IEEE 802.15.4-based star networking solution for Sub-1 GHz and
2.4 GHz
• Proprietary RF - a large set of building blocks for building proprietary RF software
• Multiprotocol support - concurrent operation between stacks using the Dynamic
Multiprotocol Manager (DMM)
The SimpleLink CC13XX-CC26XX SDK is part of TI’s SimpleLink MCU platform, offering a
single development environment that delivers flexible hardware, software and tool options
for customers developing wired and wireless applications. For more information about the
SimpleLink MCU Platform, visit http://www.ti.com/simplelink.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
47
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
Development Tools
Code Composer
Code Composer Studio is an integrated development environment (IDE) that supports TI's
Studio™ Integrated
Microcontroller and Embedded Processors portfolio. Code Composer Studio comprises a
Development
suite of tools used to develop and debug embedded applications. It includes an optimizing
Environment (IDE)
C/C++ compiler, source code editor, project build environment, debugger, profiler, and many
other features. The intuitive IDE provides a single user interface taking you through each
step of the application development flow. Familiar tools and interfaces allow users to get
started faster than ever before. Code Composer Studio combines the advantages of the
Eclipse® software framework with advanced embedded debug capabilities from TI resulting
in a compelling feature-rich development environment for embedded developers.
CCS has support for all SimpleLink Wireless MCUs and includes support for EnergyTrace™
software (application energy usage profiling). A real-time object viewer plugin is available
for TI-RTOS, part of the SimpleLink SDK.
Code Composer Studio is provided free of charge when used in conjunction with the XDS
debuggers included on a LaunchPad Development Kit.
Code Composer
Studio™ Cloud
IDE
IAR Embedded
Workbench® for
Arm®
Code Composer Studio (CCS) Cloud is a web-based IDE that allows you to create, edit and
build CCS and Energia™ projects. After you have successfully built your project, you can
download and run on your connected LaunchPad. Basic debugging, including features like
setting breakpoints and viewing variable values is now supported with CCS Cloud.
IAR Embedded Workbench® is a set of development tools for building and debugging
embedded system applications using assembler, C and C++. It provides a completely
integrated development environment that includes a project manager, editor, and build
tools. IAR has support for all SimpleLink Wireless MCUs. It offers broad debugger support,
including XDS110, IAR I-jet™ and Segger J-Link™. A real-time object viewer plugin is
available for TI-RTOS, part of the SimpleLink SDK. IAR is also supported out-of-the-box
on most software examples provided as part of the SimpleLink SDK.
A 30-day evaluation or a 32 KB size-limited version is available through iar.com.
SmartRF™ Studio
CCS UniFlash
48
SmartRF™ Studio is a Windows® application that can be used to evaluate and configure
SimpleLink Wireless MCUs from Texas Instruments. The application will help designers
of RF systems to easily evaluate the radio at an early stage in the design process. It is
especially useful for generation of configuration register values and for practical testing
and debugging of the RF system. SmartRF Studio can be used either as a standalone
application or together with applicable evaluation boards or debug probes for the RF device.
Features of the SmartRF Studio include:
• Link tests - send and receive packets between nodes
• Antenna and radiation tests - set the radio in continuous wave TX and RX states
• Export radio configuration code for use with the TI SimpleLink SDK RF driver
• Custom GPIO configuration for signaling and control of external switches
CCS UniFlash is a standalone tool used to program on-chip flash memory on TI MCUs.
UniFlash has a GUI, command line, and scripting interface. CCS UniFlash is available free
of charge.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
11.2.1 SimpleLink™ Microcontroller Platform
The SimpleLink microcontroller platform sets a new standard for developers with the broadest portfolio of
wired and wireless Arm® MCUs (System-on-Chip) in a single software development environment. Delivering
flexible hardware, software and tool options for your IoT applications. Invest once in the SimpleLink software
development kit and use throughout your entire portfolio. Learn more on ti.com/simplelink.
11.3 Documentation Support
To receive notification of documentation updates on data sheets, errata, application notes and similar, navigate
to the device product folder on ti.com/product/CC2651R3. In the upper right corner, click on Alert me to register
and receive a weekly digest of any product information that has changed. For change details, review the revision
history included in any revised document.
The current documentation that describes the MCU, related peripherals, and other technical collateral is listed as
follows.
TI Resource Explorer
TI Resource Explorer
Software examples, libraries, executables, and documentation are available for your
device and development board.
Errata
CC2651R3 Silicon
Errata
The silicon errata describes the known exceptions to the functional specifications for
each silicon revision of the device and description on how to recognize a device
revision.
Application Reports
All application reports for the CC2651R3 device are found on the device product folder at: ti.com/product/
CC2651R3/#tech-docs.
Technical Reference Manual (TRM)
CC13x1x, CC26x1x SimpleLink™
Wireless MCU TRM
The TRM provides a detailed description of all modules and
peripherals available in the device family.
11.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.5 Trademarks
SimpleLink™, LaunchPad™, Code Composer Studio™, EnergyTrace™, and TI E2E™ are trademarks of Texas
Instruments.
I-jet™ is a trademark of IAR Systems AB.
J-Link™ is a trademark of SEGGER Microcontroller Systeme GmbH.
Arm® and Cortex® are registered trademarks of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
CoreMark® is a registered trademark of Embedded Microprocessor Benchmark Consortium Corporation.
Zigbee® is a registered trademark of Zigbee Alliance Inc.
Bluetooth® is a registered trademark of Bluetooth SIG Inc.
Arm Thumb® is a registered trademark of Arm Limited (or its subsidiaries).
Wi-SUN® is a registered trademark of Wi-SUN Alliance Inc.
Eclipse® is a registered trademark of Eclipse Foundation.
IAR Embedded Workbench® is a registered trademark of IAR Systems AB.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
49
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
Windows® is a registered trademark of Microsoft Corporation.
All trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.7 Glossary
TI Glossary
50
This glossary lists and explains terms, acronyms, and definitions.
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
CC2651R3
www.ti.com
SWRS258B – SEPTEMBER 2021 – REVISED MARCH 2022
12 Mechanical, Packaging, and Orderable Information
Submit Document Feedback
Copyright © 2022 Texas Instruments Incorporated
Product Folder Links: CC2651R3
51
PACKAGE OPTION ADDENDUM
www.ti.com
2-May-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
CC2651R31T0RGZR
ACTIVE
VQFN
RGZ
48
2500
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 105
CC2651
R31
Samples
CC2651R31T0RKPR
ACTIVE
VQFN
RKP
40
3000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 105
CC2651
R31
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
工商网监
湘ICP备2023018690号
