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CD4069UB
SCHS054E – NOVEMBER 1998 – REVISED JANUARY 2019
CD4069UB CMOS hex inverter
1 Features
3 Description
•
•
The CD4069UB device consist of six CMOS inverter
circuits. These devices are intended for all generalpurpose inverter applications where the mediumpower
TTL-drive
and
logic-level-conversion
capabilities of circuits such as the CD4009 and
CD4049 hex inverter and buffers are not required.
1
•
•
•
Standardized symmetrical output characteristics
Medium speed operation: tPHL, tPLH = 30 ns at 10
V (Typical)
100% Tested for quiescent current at 20 V
Maximum input current of 1 µA at 18 V over full
package-temperature range, 100 nA at 18 V and
25°C
Meets all requirements of JEDEC tentative
standard No. 13B, Standard Specifications for
Description of B Series CMOS Devices
2 Applications
•
•
•
•
Logic inversion
Pulse shaping
Oscillators
High-input-impedance amplifiers
Device Information(1)
PART NUMBER
PACKAGE
(PINS)
BODY SIZE (NOM)
CD4069UBE
PDIP (14)
19.30 mm × 6.35 mm
CD4069UBF
CDIP (14)
19.56 mm × 6.67 mm
CD4069UBM
SOIC (14)
8.65 mm × 3.91 mm
CD4069UBNSR
SO (14)
10.30 mm × 5.30 mm
CD4069UBPW
TSSOP (14)
5.00 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
CD4069UB Functional Diagram
A
B
C
D
E
F
1
2
3
4
5
6
9
8
11
10
13
12
G=A
H=B
I=C
J=D
K=E
L=F
VDD = Pin 14
VSS = Pin 7
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CD4069UB
SCHS054E – NOVEMBER 1998 – REVISED JANUARY 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
5
8
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information .................................................
Electrical Characteristics – Dynamic.........................
Electrical Characteristics – Static..............................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 9
Detailed Description ............................................ 13
8.1 Overview ................................................................ 13
8.2 Functional Block Diagram ....................................... 13
8.3 Feature Description ................................................ 13
8.4 Device Functional Modes ....................................... 13
9
Application and Implementation ........................ 14
9.1 Application Information .......................................... 14
9.2 Typical Application ................................................. 14
10 Power Supply Recommendations ..................... 16
11 Layout................................................................... 16
11.1 Layout Guidelines ................................................ 16
11.2 Layout Example ................................................... 16
12 Device and Documentation Support ................. 17
12.1
12.2
12.3
12.4
12.5
12.6
Device Support......................................................
Documentation Support ........................................
Community Resource............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
17
17
17
17
17
17
13 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (February 2016) to Revision E
Page
•
Removed artifact "–" at tPHLterm on the second Features bullet ........................................................................................... 1
•
Corrected VI spec MIN/MAX values in the Abs Max Ratings table ....................................................................................... 4
•
Corrected parameter IDD max term to IDD in the Elec Characteristics table ........................................................................... 5
•
Corrected parameter IOL min term to IOL in the Elec Characteristics table ............................................................................ 5
•
Corrected parameter VOL max term to VOL in the Elec Characteristics table ......................................................................... 6
•
Corrected parameter VIL max term to VIL in the Elec Characteristics table ........................................................................... 6
•
Corrected parameter VIH min term to VIH in the Elec Characteristics table ........................................................................... 6
•
Corrected parameter IIN max term to IIN in the Elec Characteristics table ............................................................................. 7
•
Added Y-axis label to Figure 1 image object ......................................................................................................................... 8
•
Changed text string from " –tPHL" to "of tPHL" in the Feature Description paragraph. ........................................................... 13
Changes from Revision C (August 2003) to Revision D
•
2
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
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SCHS054E – NOVEMBER 1998 – REVISED JANUARY 2019
5 Pin Configuration and Functions
D, J, N, NS, and PW Packages
14-Pin PDIP, CDIP, SOIC, SO, and TSSOP
Top View
A
1
14
VDD
G=A
2
13
F
B
3
12
L=F
H=B
4
11
E
C
5
10
K=E
I=C
6
9
D
VSS
7
8
J=D
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
A
1
I
A input
B
3
I
B input
C
5
I
C input
D
9
I
D input
E
11
I
E input
F
13
I
F input
G=A
2
O
G output
H=B
4
O
H output
I=C
6
O
I output
J=D
8
O
J output
K=E
10
O
K output
L=F
12
O
L output
VDD
14
—
Positive supply
VSS
7
—
Negative supply
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SCHS054E – NOVEMBER 1998 – REVISED JANUARY 2019
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
VDD
DC supply-voltage (voltages referenced to VSS terminal)
–0.5
20
V
VI
Input voltage, all inputs
–0.5
VDD + 0.5
V
IIK
DC input current, any one input
–10
10
mA
–55°C to 100°C
Power dissipation per package
PD
500
100°C to 125°C
Device dissipation per output transistor
12
200
Full range (all package types)
Lead temperature (2)
TJ
Junction temperature
Tstg
Storage temperature
(1)
(2)
–65
mW
100
mW
265
°C
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
During soldering at distance 1/16 inch ± 1/32 inch (1.59 mm ± 0.79 mm) from case for 10 s maximum
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±500
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±200
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VDD
Supply voltage
TA
Operating temperature
MAX
UNIT
3
18
V
–55
125
°C
6.4 Thermal Information
CD4069UB
THERMAL METRIC (1)
D (SOIC)
J (CDIP)
N (PDIP)
NS (SO)
PW (TSSOP)
UNIT
14 PINS
14 PINS
14 PINS
14 PINS
14 PINS
RθJA
Junction-to-ambient thermal resistance
94.9
—
57.9
91.2
122.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
56.4
28.5
45.5
48.8
50.8
°C/W
RθJB
Junction-to-board thermal resistance
49.2
—
37.7
50
63.8
°C/W
ψJT
Junction-to-top characterization parameter
21.1
—
30.6
15
6.3
°C/W
ψJB
Junction-to-board characterization parameter
48.9
—
37.6
49.6
63.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
N/A
N/A
N/A
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics – Dynamic
TA = 25°C; input tr, tf = 20 ns; CL = 50 pF; RL = 200 kΩ (unless otherwise noted)
PARAMETER
tPLH, tPHL
tTHL, tTLH
CIN
TEST CONDITIONS
Propagation delay time
Transition time
Input capacitance
MIN
TYP
MAX
UNIT
VDD (V) = 5
55
110
VDD (V) = 10
30
60
VDD (V) = 15
25
50
VDD (V) = 5
100
200
VDD (V) = 10
50
100
VDD (V) = 15
40
80
Any input
10
15
pF
MAX
UNIT
ns
ns
6.6 Electrical Characteristics – Static
TA = 25°C; input tr, tf = 20 ns; CL = 50 pF; RL = 200 kΩ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VIN = 0V or 5 V , VDD = 5 V
MIN
TYP
TA = –55°C
0.25
TA = –40°C
0.25
TA = 25°C
0.01
7.5
TA = 125°C
7.5
TA = –55°C
0.5
TA = –40°C
VIN = 0 or 10 V, VDD = 10 V
IDD
Quiescent device current
VIN = 0 or 15 V, VDD = 15 V
0.5
TA = 25°C
0.01
15
TA = 125°C
15
TA = –55°C
1
TA = –40°C
1
TA = 25°C
0.01
30
TA = 125°C
30
TA = –55°C
5
5
TA = 25°C
0.02
Output low (sink) current
VO = 0.5 V, VIN = 10 V,
VDD = 10 V
VO = 1.5 V, VIN = 15 V,
VDD = 15 V
5
150
TA = 125°C
IOL
150
TA = –55°C
0.64
TA = –40°C
0.61
TA = 25°C
0.51
TA = 85°C
0.42
TA = 125°C
0.36
TA = –55°C
1.6
TA = –40°C
1.5
TA = 25°C
1.3
TA = 85°C
1.1
TA = 125°C
0.9
TA = –55°C
4.2
TA = –40°C
4
TA = 25°C
3.4
TA = 85°C
2.8
TA = 125°C
2.4
1
2.6
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mA
6.8
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µA
1
TA = 85°C
TA = 85°C
VO = 0.4 V, VIN = 5 V,
VDD = 5 V
0.5
TA = 85°C
TA = –40°C
VIN = 0 or 20 V, VDD = 20 V
0.25
TA = 85°C
5
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SCHS054E – NOVEMBER 1998 – REVISED JANUARY 2019
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Electrical Characteristics – Static (continued)
TA = 25°C; input tr, tf = 20 ns; CL = 50 pF; RL = 200 kΩ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VO = 4.6 V, VIN = 0 V,
VDD = 5 V
VO = 2.5 V, VIN = 0 V,
VDD = 5 V
IOH
Output high (source) current
VO = 9.5 V, VIN = 0 V,
VDD = 10 V
VO = 13.5 V, VIN = 0 V,
VDD = 15 V
MIN
TA = –55°C
–0.64
TA = –40°C
–0.61
TA = 25°C
–0.51
TA = 85°C
–0.42
TA = 125°C
–0..36
TA = –55°C
–2
TA = –40°C
–1.8
TA = 25°C
–1.6
TA = 85°C
–1.3
TA = 125°C
–1.15
TA = –55°C
–1.6
TA = –40°C
–1.5
TA = 25°C
–1.3
TA = 85°C
–1.1
TA = 125°C
–0.9
TA = –55°C
–4.2
TA = –40°C
–4
TA = 25°C
–3.4
TA = 85°C
–2.8
TA = 125°C
–2.4
TA = 25°C
VIN = 5 V, VDD = 5 V
Low-level output voltage
VIN = 10 V, VDD = 10 V
VIN = 0 V, VDD = 5 V
VOH
High-level output voltage
VIN = 0 V, VDD = 10 V
VIN = 0 V, VDD = 15 V
Input low voltage
0
4.95
All other
temperatures
4.95
TA = 25°C
9.95
All other
temperatures
9.95
TA = 25°C
14.95
All other
temperatures
14.95
V
0.05
5
10
V
15
1
VO = 9 V, VDD = 10 V, all temperatures
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0.05
0.05
TA = 25°C
VO = 1 V, VDD = 10 V, all temperatures
0.05
0.05
All other
temperatures
VO = 1.5 V, VDD = 15 V, all temperatures
6
–6.8
All other
temperatures
VO = 0.5 V, VDD = 5 V, all temperatures
Input high voltage
–2.6
0
2
VO = 13.5 V, VDD = 15 V, all temperatures
VIH
mA
0.05
VO = 4.5 V, VDD = 5 V, all temperatures
VIL
UNIT
–3.2
0
TA = 25°C
VIN = 15 V, VDD = 15 V
MAX
–1
All other
temperatures
TA = 25°C
VOL
TYP
V
2.5
4
8
V
12.5
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Electrical Characteristics – Static (continued)
TA = 25°C; input tr, tf = 20 ns; CL = 50 pF; RL = 200 kΩ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
TA = –55°C
Input current
VIN = 0 V to 18 V, VDD = 18 V TA = 25°C
±01
±10–5
±1
TA = 85°C
±1
TA = 125°C
±1
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UNIT
±01
TA = –40°C
IIN
MAX
µA
7
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6.7 Typical Characteristics
20
17.5
17.5
15
VO
12.5
10
7.5
5-V Min VDD
5-V Max VDD
10-V Min VDD
10-V Max VDD
15-V Min VDD
15-V Max VDD
5
2.5
12.5
Output Voltage (V)
Output Voltage (V)
V IN
15
10
7.5
5
2.5
0
0
0
2.5
5
7.5
10 12.5 15 17.5
Input Voltage (V)
20
22.5
0
25
Output Voltage (V)
12.5
10
7.5
7.5
5
5
2.5
2.5
0
0
2.5
5
7.5
10
Input Voltage (V)
12.5
15
0
17.5
12.5
15
17.5
D034
Gate-to-Source Voltage = 5 V
Gate-to-Source Voltage = 10 V
Gate-to-Source Voltage = 15 V
35
30
25
20
15
10
5
0
0
5
D035
Figure 3. Typical Current and Voltage Transfer
Characteristics
10
15
Drain-to-Source Voltage (V)
20
25
D001
Figure 4. Typical Output Low (Sink) Current Characteristics
20
0
Gate-to-Source Voltage = 5 V
Gate-to-Source Voltage = 10 V
Gate-to-Source Voltage = 15 V
17.5
Output High (Source) Current (mA)
Output Low (Sink) Current (mA)
7.5
10
Input Voltage (V)
40
Output Low (Sink) Current (mA)
17.5
VDD = 5 V
VDD = 10 V 15
VDD = 15 V
IO at 5 V
12.5
IO at 10 V
IO at 15 V
10
15
5
Figure 2. Typical Voltage Transfer Characteristics as a
Function of Temperature
Supply Current (mA)
17.5
2.5
D033
Figure 1. Minimum and Maximum Voltage Transfer
Characteristics
15
12.5
10
7.5
5
2.5
0
0
5
10
15
Drain-to-Source Voltage (V)
20
25
Gate-to-Source Voltage = -5 V
Gate-to-Source Voltage = -10 V
Gate-to-Source Voltage = -15 V
-5
-10
-15
-20
-25
-30
-35
-40
-25
-20
D002
Figure 5. Minimum Output Low (Sink) Current
Characteristics
8
5 V at -55qC
5 V at 125qC
10 V at -55qC
10 V at 125qC
15 V at -55qC
15 V at 125qC
-15
-10
Drain-to-Source Voltage (V)
-5
0
D003
Figure 6. Typical Output High (Source) Current
Characteristics
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Typical Characteristics (continued)
120
Gate-to-Source Voltage = -5 V
Gate-to-Source Voltage = -10 V
Gate-to-Source Voltage = -15 V
Propagation Delay Time (ns)
Output High (Source) Current (mA)
0
-5
-10
-15
-20
-25
VDD = 5 V
VDD = 10 V
VDD = 15 V
100
80
60
40
20
0
-20
-15
-10
Drain-to-Source Voltage (V)
-5
0
0
20
40
D004
Figure 7. Minimum Output High (Source) Current
Characteristics
60
80
100
Load Capacitance (pF)
120
140 150
D036
Figure 8. Typical Propagation Delay Time vs Load
Capacitance
140
CL = 15 pF
CL = 50 pF
Propagation Delay Time (ns)
120
100
80
60
40
20
0
0
5
10
15
Supply Voltage (V)
20
25
D037
Figure 9. Typical Propagation Delay Time vs Supply Voltage
7 Parameter Measurement Information
VDD
VDD
p
G=A
1 (3, 5, 9, 11, 13)
A
G
2 (4, 6, 8, 10, 12)
n
VSS
Figure 10. Schematic Diagram of One of Six Identical Inverters
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VDD
VDD
INPUTS
VSS
IDD
VSS
Figure 11. Quiescent Device Current Test Circuit
VDD
INPUTS
OUTPUTS
VIH
+ DVM
±
VIL
VSS
Figure 12. Noise Immunity Test Circuit
VDD
INPUTS
VDD
I
VSS
VSS
Figure 13. Input Leakage Current Test Circuit
10
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VDD
tf
tr
Pulse Generator
tr = tf = 20 ns
IN
10
1
14
2
13
3
12
4
11
5
10
6
9
7
8
90%
Input
50%
tTLH
tTHL
90%
Inverting
Output
50%
VDD
10%
OUT
CL = 50 pF
VDD
10%
200 k
tPHL
tPLH
Figure 14. Dynamic Electrical Characteristics Test Circuit and Waveform
1/6 CD4069
Rf
RS
XTAL
CS
CT
Figure 15. Typical Crystal Oscillator Circuit
1/6 CD4069
IN
OUT
Rf § 10 M
Figure 16. High-Input Impedance Amplifier
1/3 CD4069
CT
RS
RT
Figure 17. Typical RC Oscillator Circuit
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1/3 CD4069
RS
IN
OUT
Rf
Upper Switching Point :
RS Rf VDD
VP
u
Rf
2
Lower Switching Point :
R f RS VDD
VN
u
Rf
2
R f ! RS
Figure 18. Input Pulse Shaping Circuit
VDD
0.1 F
I
500 F
10 kHz
100 kHz, 1 MHz
1
14
2
13
12
3
CL
4
CD4069UB
11
5
10
6
9
7
8
Figure 19. Dynamic Power Dissipation Test Circuit
12
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8 Detailed Description
8.1 Overview
The CD4069UB device has six inverter circuits. The recommended operating range is from 3 V to
18 V. The CD4069UB-series types are supplied in 14-pin hermetic dual-in-line ceramic packages (F3A suffix),
14-pin dual-in-line plastic packages (E suffix), 14-pin small-outline packages (M, MT, M96, and NSR suffixes),
and 14-pin thin shrink small-outline packages (PW and PWR suffixes).
8.2 Functional Block Diagram
A
B
C
D
E
F
1
2
3
4
5
6
9
8
11
10
13
12
G=A
H=B
I=C
J=D
K=E
L=F
VDD = Pin 14
VSS = Pin 7
8.3 Feature Description
CD4069UB has standardized symmetrical output characteristics and a wide operating voltage range from 3 V to
18 V with quiescent current tested at 20 V. This has a medium operation speed of tPHL, tPLH = 30 ns (typical) at
10 V. The operating temperature is from –55°C to 125°C. CB4069B meets all requirements of JEDEC tentative
standard No. 13B, Standard Specifications for Description of B Series CMOS Devices.
8.4 Device Functional Modes
Table 1 shows the functional modes for CD4069UB.
Table 1. Function Table
INPUT
A, B, C, D, E, F
OUTPUT
G, H, I, J, K, L
H
L
L
H
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The CD4069UB device has a low input current of 1 µA at 18 V over full package-temperature range and 100 nA
at 18 V, 25°C. This device has a wide operating voltage range from 3 V to 18 V and used in high voltage
applications.
9.2 Typical Application
VCC
C
Logic signal
LED
R
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Figure 20. CD4069UB Application
9.2.1 Design Requirements
The CD4069UB device is the industry's highest logic inverter operating at 18 V under recommended conditions.
The lower drive capabilities makes it suitable for driving light loads like LED and greatly reduces chances of
overshoots and undershoots.
9.2.2 Detailed Design Procedure
The recommended input conditions for Figure 20 includes rise time and fall time specifications (see Δt/ΔV in
Recommended Operating Conditions) and specified high and low levels (see VIH and VIL in Recommended
Operating Conditions). Inputs are not overvoltage tolerant and must be below VCC level because of the presence
of input clamp diodes to VCC.
The recommended output condition for the CD4069UB application includes specific load currents. Load currents
must be limited so as to not exceed the total power (continuous current through VCC or GND) for the device.
These limits are located in the Absolute Maximum Ratings. Outputs must not be pulled above VCC.
14
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Typical Application (continued)
9.2.3 Application Curves
300
100k
Transition Time (ns)
250
Power Dissipation Per Inverter(PW)
Supply Voltage = 5 V
Supply Voltage = 10 V
Supply Voltage = 15 V
200
150
100
50
0
0
20
40
60
80
100
Load Capacitance (pF)
120
140
10k
1k
100
VDD = 5 V (CL = 50 pF)
VDD = 10 V (CL = 15 pF)
VDD = 10 V (CL = 50 pF)
VDD = 15 V (CL = 50 pF)
10
10
100
D010
Figure 21. Typical Transition Time vs Load Capacitance
1k
Input Frequency (kHz)
10k
100k
D038
Figure 22. Typical Dynamic Power Dissipation vs
Frequency
Normalized Propagation Delay Time (ns)
5
4
3
2
1
0
2
4
6
8
10
Supply Voltage (V)
12
14
16
D039
Figure 23. Variation of Normalized Propagation Delay Time (tPHL and tPLH) With Supply Voltage
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10 Power Supply Recommendations
The power supply can be any voltage between the minimum and maximum supply voltage rating located in
Recommended Operating Conditions.
Each VCC pin must have a good bypass capacitor to prevent power disturbance. For devices with a single supply,
TI recommends a 0.1-μF capacitor. If there are multiple VCC pins, then TI recommends a 0.01-μF or 0.022-μF
capacitor for each power pin. It is acceptable to parallel multiple bypass capacitors to reject different frequencies
of noise. 0.1-μF and 1-μF capacitors are commonly used in parallel. The bypass capacitor must be installed as
close to the power pin as possible for best results.
11 Layout
11.1 Layout Guidelines
When using multiple bit logic devices, inputs must never float.
In many cases, digital logic device functions or parts of these functions are unused (for example, when only two
inputs of a triple-input and gate are used, or only 3 of the 4 buffer gates are used). Such input pins must not be
left unconnected because the undefined voltages at the outside connections result in undefined operational
states. This rule must be observed under all circumstances specified in the next paragraph.
All unused inputs of digital logic devices must be connected to a high or low bias to prevent them from floating.
See the application note, Implications of Slow or Floating CMOS Inputs (SCBA004), for more information on the
effects of floating inputs. The logic level must apply to any particular unused input depending on the function of
the device. Generally, they are tied to GND or VCC (whichever is convenient).
11.2 Layout Example
VCC
Unused Input
Input
Output
Unused Input
Output
Input
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation see the following:
• Implications of Slow or Floating CMOS Inputs, SCBA004
12.3 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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17
PACKAGE OPTION ADDENDUM
www.ti.com
11-Jul-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
CD4069UBE
ACTIVE
PDIP
N
14
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-55 to 125
CD4069UBE
Samples
CD4069UBEE4
ACTIVE
PDIP
N
14
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-55 to 125
CD4069UBE
Samples
CD4069UBF
ACTIVE
CDIP
J
14
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
CD4069UBF
Samples
CD4069UBF3A
ACTIVE
CDIP
J
14
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
CD4069UBF3A
Samples
CD4069UBM
ACTIVE
SOIC
D
14
50
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
CD4069UBM
Samples
CD4069UBM96
ACTIVE
SOIC
D
14
2500
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-55 to 125
CD4069UBM
Samples
CD4069UBMT
ACTIVE
SOIC
D
14
250
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
CD4069UBM
Samples
CD4069UBNSR
ACTIVE
SO
NS
14
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
CD4069UB
Samples
CD4069UBPW
ACTIVE
TSSOP
PW
14
90
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
CM069UB
Samples
CD4069UBPWG4
ACTIVE
TSSOP
PW
14
90
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-55 to 125
CM069UB
Samples
CD4069UBPWR
ACTIVE
TSSOP
PW
14
2000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-55 to 125
CM069UB
Samples
JM38510/17401BCA
ACTIVE
CDIP
J
14
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
JM38510/
17401BCA
Samples
M38510/17401BCA
ACTIVE
CDIP
J
14
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
JM38510/
17401BCA
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
11-Jul-2022
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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