CD74HC366EE4

[ /Title (CD74 HC365 , CD74 HCT36 5, CD74 HC366 , CD74 HCT36 6) /Subject (High Speed CD54/74HC365, CD54/74HCT365, CD54/74HC366 Data sheet acquired from Harris Semiconductor SCHS180C November 1997 - Revised October 2003 High Speed CMOS Logic Hex Buffer/Line Driver, Three-State Non-Inverting and Inverting Features low power Schottky TTL circuits. Both circuits are capable of driving up to 15 low power Schottky inputs. • Buffered Inputs The ’HC365 and ’HCT365 are non-inverting buffers, whereas the ’HC366 is an inverting buffer. These devices have two three-state control inputs (OE1 and OE2) which are NORed together to control all six gates. • High Current Bus Driver Outputs • Typical Propagation Delay tPLH, tPHL = 8ns at VCC = 5V, CL = 15pF, TA = 25oC The ’HCT365 logic families are speed, function and pin compatible with the standard LS logic family. • Fanout (Over Temperature Range) - Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads - Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads Ordering Information • Wide Operating Temperature Range . . . -55oC to 125oC PART NUMBER • Balanced Propagation Delay and Transition Times • Significant Power Reduction Compared to LSTTL Logic ICs • HC Types - 2V to 6V Operation - High Noise Immunity: NIL = 30%, NIH = 30% of VCC at VCC = 5V • HCT Types - 4.5V to 5.5V Operation - Direct LSTTL Input Logic Compatibility, VIL= 0.8V (Max), VIH = 2V (Min) - CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH Description The ’HC365, ’HCT365, and ’HC366 silicon gate CMOS threestate buffers are general purpose high-speed non-inverting and inverting buffers. They have high drive current outputs which enable high speed operation even when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuitry, yet have speeds comparable to TEMP. RANGE (oC) CD54HC365F3A -55 to 125 16 Ld CERDIP CD54HC366F3A -55 to 125 16 Ld CERDIP CD54HCT365F3A -55 to 125 16 Ld CERDIP CD74HC365E -55 to 125 16 Ld PDIP CD74HC365M -55 to 125 16 Ld SOIC CD74HC365MT -55 to 125 16 Ld SOIC CD74HC365M96 -55 to 125 16 Ld SOIC CD74HC366E -55 to 125 16 Ld PDIP CD74HC366M -55 to 125 16 Ld SOIC CD74HC366M96 -55 to 125 16 Ld SOIC CD74HCT365E -55 to 125 16 Ld PDIP CD74HCT365M -55 to 125 16 Ld SOIC CD74HCT365MT -55 to 125 16 Ld SOIC CD74HCT365M96 -55 to 125 16 Ld SOIC NOTE: When ordering, use the entire part number. The suffix 96 denotes tape and real. The suffix T denotes a small-quantity reel of 250. Pinout CD54HC365, CD54HCT365, CD54HC366 (CERDIP) CD74HC365, CD74HCT365, CD74HC366 (PDIP, SOIC) TOP VIEW OE1 1 16 VCC 1A 2 15 OE2 14 6A (1Y) 1Y 3 13 6Y (6Y) 2A 4 (2Y) 2Y 5 12 5A 11 5Y (5Y) 3A 6 10 4A (3Y) 3Y 7 9 4Y (4Y) GND 8 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © 2003, Texas Instruments Incorporated PACKAGE 1 CD54/74HC365, CD54/74HCT365, CD54/74HC366 Functional Diagrams HC365, HCT365 OE1 1A 1Y 2A 2Y 1 16 2 15 3 14 4 13 5 12 6 11 GND OE1 VCC 1A OE2 1Y 6A 3A 3Y HC366 7 10 8 9 2A 6Y 2Y 5A 3Y GND 4Y TRUTH TABLE OUTPUTS (Y) OE1 OE2 A HC/HCT365 HC366 L L L L H L L H H L X H X Z Z H X X Z Ζ NOTE: H = High Voltage Level L = Low Voltage Level X = Don’t Care Z = High Impedance (OFF) State 2 16 2 15 3 14 4 13 5 12 6 11 3A 5Y 4A INPUTS 1 7 10 8 9 VCC OE2 6A 6Y 5A 5Y 4A 4Y CD54/74HC365, CD54/74HCT365, CD54/74HC366 Logic Diagram VCC 16 ONE OF SIX IDENTICAL CIRCUITS 2 1A 3 (NOTE) 1Y GND 8 1 OE1 4 15 5 2A 2Y OE2 6 7 3A 3Y 10 4A 9 4Y 12 5A 11 5Y 14 6A 13 6Y NOTE: Inverter not included in HC/HCT365. FIGURE 1. LOGIC DIAGRAM FOR THE HC/HCT365 AND HC366 (OUTPUTS FOR HC/HCT365 ARE COMPLEMENTS OF THOSE SHOWN, i.e., 1Y, 2Y, ETC.) 3 CD54/74HC365, CD54/74HCT365, CD54/74HC366 Absolute Maximum Ratings Thermal Information DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V DC Input Diode Current, IIK For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA DC Output Diode Current, IOK For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA DC Drain Current, per Output, IO For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA DC Output Source or Sink Current per Output Pin, IO For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA Thermal Resistance (Typical, Note 1) θJA (oC/W) E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . 67 M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . . 73 Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Supply Voltage Range, VCC HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC Input Rise and Fall Time 2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max) 4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max) 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. The package thermal impedance is calculated in accordance with JESD 51-7. DC Electrical Specifications TEST CONDITIONS SYMBOL VI (V) High Level Input Voltage VIH - Low Level Input Voltage VIL High Level Output Voltage CMOS Loads VOH PARAMETER 25oC IO (mA) VCC (V) MIN TYP -40oC TO 85oC MAX MIN MAX -55oC TO 125oC MIN MAX UNITS HC TYPES - VIH or VIL High Level Output Voltage TTL Loads Low Level Output Voltage CMOS Loads VOL VIH or VIL Low Level Output Voltage TTL Loads Input Leakage Current Quiescent Device Current - - 2 1.5 - - 1.5 - 1.5 - V 4.5 3.15 - - 3.15 - 3.15 - V 6 4.2 - - 4.2 - 4.2 - V 2 - - 0.5 - 0.5 - 0.5 V 4.5 - - 1.35 - 1.35 - 1.35 V 6 - - 1.8 - 1.8 - 1.8 V -0.02 2 1.9 - - 1.9 - 1.9 - V -0.02 4.5 4.4 - - 4.4 - 4.4 - V -0.02 6 5.9 - - 5.9 - 5.9 - V -6 4.5 3.98 - - 3.84 - 3.7 - V -7.8 6 5.48 - - 5.34 - 5.2 - V 0.02 2 - - 0.1 - 0.1 - 0.1 V 0.02 4.5 - - 0.1 - 0.1 - 0.1 V 0.02 6 - - 0.1 - 0.1 - 0.1 V 6 4.5 - - 0.26 - 0.33 - 0.4 V 7.8 6 - - 0.26 - 0.33 - 0.4 V II VCC or GND - 6 - - ±0.1 - ±1 - ±1 µA ICC VCC or GND 0 6 - - 8 - 80 - 160 µA 4 CD54/74HC365, CD54/74HCT365, CD54/74HC366 DC Electrical Specifications (Continued) TEST CONDITIONS 25oC SYMBOL VI (V) IO (mA) VCC (V) IOZ VIL or VIH VO = VCC or GND High Level Input Voltage VIH - Low Level Input Voltage VIL High Level Output Voltage CMOS Loads VOH PARAMETER Three-State Leakage Current -40oC TO 85oC -55oC TO 125oC MIN TYP MAX MIN MAX MIN MAX UNITS 6 - - ±0.5 - ±5.0 - ±10 µA - 4.5 to 5.5 2 - - 2 - 2 - V - - 4.5 to 5.5 - - 0.8 - 0.8 - 0.8 V VIH or VIL -0.02 4.5 4.4 - - 4.4 - 4.4 - V -4 4.5 3.98 - - 3.84 - 3.7 - V 0.02 4.5 - - 0.1 - 0.1 - 0.1 V 4 4.5 - - 0.26 - 0.33 - 0.4 V HCT TYPES High Level Output Voltage TTL Loads Low Level Output Voltage CMOS Loads VOL VIH or VIL Low Level Output Voltage TTL Loads II VCC to GND 0 5.5 - - ±0.1 - ±1 - ±1 µA ICC VCC or GND 0 5.5 - - 8 - 80 - 160 µA Additional Quiescent Device Current Per Input Pin: 1 Unit Load (Note 2) ∆ICC VCC -2.1 - 4.5 to 5.5 - 100 360 - 450 - 490 µA Three-State Leakage Current IOZ VIL or VIH VO = VCC or GND 5.5 - - ±0.5 - ±5.0 - ±10 µA Input Leakage Current Quiescent Device Current NOTE: 2. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA. HCT Input Loading Table INPUT UNIT LOADS OE1 0.6 All Others 0.55 NOTE: Unit Load is ∆ICC limit specified in DC Electrical Specifications table, e.g., 360µA max at 25oC. Switching Specifications - HC/HCT365 PARAMETER Input tr, tf = 6ns SYMBOL TEST CONDITIONS tPLH, tPHL CL = 50pF 25oC -40oC TO 85oC -55oC TO 125oC VCC (V) TYP MAX MAX MAX UNITS 2 - 105 130 160 ns 4.5 - 21 26 32 ns 6 - 18 22 27 ns 5 8 - - - ns HC TYPES Propagation Delay, Data to Outputs HC/HCT365 CL = 15pF 5 CD54/74HC365, CD54/74HCT365, CD54/74HC366 Switching Specifications - HC/HCT365 PARAMETER Propagation Delay, Data to Outputs HC366 Propagation Delay, Output Enable and Disable to Outputs Output Transition Time Input tr, tf = 6ns (Continued) SYMBOL TEST CONDITIONS tPLH, tPHL CL = 50pF tPLH, tPHL tTLH, tTHL 25oC -40oC TO 85oC -55oC TO 125oC VCC (V) TYP MAX MAX MAX UNITS 2 - 110 140 165 ns 4.5 - 22 28 33 ns 6 - 19 24 28 ns CL = 15pF 5 9 - - - ns CL = 50pF 2 - 150 190 225 ns 4.5 - 30 38 45 ns 6 - 26 33 38 ns CL = 15pF 5 12 - - - ns CL = 50pF 2 - 60 75 90 ns 4.5 - 12 15 18 ns 6 - 10 13 15 ns Input Capacitance CI - - - 10 10 10 pF Three-State Output Capacitance CO - - - 20 20 20 pF Power Dissipation Capacitance (Notes 3, 4) CPD - 5 40 - - - pF CL = 50pF 4.5 - 25 31 38 ns CL = 15pF 5 9 - - - ns CL = 50pF 4.5 - 27 34 41 ns CL = 15pF 5 11 - - - ns CL = 50pF 4.5 - 35 44 53 ns CL = 15pF 5 14 - - - ns CL = 50pF 4.5 - 12 15 18 ns HCT TYPES Propagation Delay, Data to Outputs HC/HCT365 tPLH, tPHL Propagation Delay, Data to Outputs HC366 tPLH, tPHL Propagation Delay, Output Enable and Disable to Outputs tPLH, tPHL Output Transition Time tTLH, tTHL Input Capacitance CIN - - - 10 10 10 pF Three-State Capacitance CO - - - 20 20 20 pF Power Dissipation Capacitance (Notes 3, 4) CPD - 5 42 - - - pF NOTES: 3. CPD is used to determine the dynamic power consumption, per buffer. 4. PD = VCC2fi (CPD + CL) where fi = Input Frequency, CL = Output Load Capacitance, VCC = Supply Voltage. 6 CD54/74HC365, CD54/74HCT365, CD54/74HC366 Test Circuits and Waveforms tr = 6ns tf = 6ns 90% 50% 10% INPUT GND tTLH tPHL 6ns 10% 2.7 1.3 OUTPUT LOW TO OFF 90% OUTPUT HIGH TO OFF 50% OUTPUTS DISABLED FIGURE 4. HC THREE-STATE PROPAGATION DELAY WAVEFORM OTHER INPUTS TIED HIGH OR LOW OUTPUT DISABLE IC WITH THREESTATE OUTPUT GND 1.3V tPZH 90% OUTPUTS ENABLED OUTPUTS ENABLED 0.3 10% tPHZ tPZH 3V tPZL tPLZ 50% OUTPUTS ENABLED 6ns GND 10% tPHZ tf OUTPUT DISABLE tPZL tPLZ OUTPUT HIGH TO OFF 6ns tr VCC 90% tPLH FIGURE 3. HCT TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC 6ns OUTPUT LOW TO OFF 1.3V 10% INVERTING OUTPUT FIGURE 2. HC TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC 50% tTLH 90% tPLH tPHL GND tTHL 90% 50% 10% INVERTING OUTPUT 3V 2.7V 1.3V 0.3V INPUT tTHL OUTPUT DISABLE tf = 6ns tr = 6ns VCC 1.3V OUTPUTS DISABLED OUTPUTS ENABLED FIGURE 5. HCT THREE-STATE PROPAGATION DELAY WAVEFORM OUTPUT RL = 1kΩ CL 50pF VCC FOR tPLZ AND tPZL GND FOR tPHZ AND tPZH NOTE: Open drain waveforms tPLZ and tPZL are the same as those for three-state shown on the left. The test circuit is Output RL = 1kΩ to VCC, CL = 50pF. FIGURE 6. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT 7 PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) CD54HC365F3A ACTIVE CDIP J 16 1 TBD Call TI N / A for Pkg Type -55 to 125 8500101EA CD54HC365F3A CD54HC366F3A ACTIVE CDIP J 16 1 TBD Call TI N / A for Pkg Type -55 to 125 5962-8682801EA CD54HC366F3A CD54HCT365F3A ACTIVE CDIP J 16 1 TBD Call TI N / A for Pkg Type -55 to 125 CD54HCT365F3A CD74HC365E ACTIVE PDIP N 16 25 Green (RoHS & no Sb/Br) NIPDAU N / A for Pkg Type -55 to 125 CD74HC365E CD74HC365M ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HC365M CD74HC365M96 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HC365M CD74HC365M96E4 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HC365M CD74HC365MT ACTIVE SOIC D 16 250 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HC365M CD74HC366E ACTIVE PDIP N 16 25 Green (RoHS & no Sb/Br) NIPDAU N / A for Pkg Type -55 to 125 CD74HC366E CD74HC366M ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HC366M CD74HC366M96 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HC366M CD74HCT365E ACTIVE PDIP N 16 25 Green (RoHS & no Sb/Br) NIPDAU N / A for Pkg Type -55 to 125 CD74HCT365E CD74HCT365M ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HCT365M CD74HCT365M96 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -55 to 125 HCT365M (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of