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CSD13302W
SLPS535 – MARCH 2015
CSD13302W 12 V N Channel NexFET™ Power MOSFET
1 Features
•
•
•
•
•
•
•
1
Product Summary
Ultra Low On Resistance
Low Qg and Qgd
Small Footprint 1 mm × 1 mm
Low Profile 0.62 mm Height
Pb Free
RoHS Compliant
Halogen Free
TA = 25°C
TYPICAL VALUE
Drain-to-Source Voltage
12
V
Qg
Gate Charge Total (4.5 V)
6.0
nC
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source
On-Resistance
VGS(th)
Threshold Voltage
2.1
nC
VGS = 2.5 V
21.2
mΩ
VGS = 4.5 V
14.6
mΩ
1.0
V
Ordering Information(1)
2 Applications
•
•
•
UNIT
VDS
Battery Management
Load Switch
Battery Protection
Device
Qty
Media
Package
Ship
CSD13302W
3000
7-Inch Reel
CSD13302WT
250
7-Inch Reel
1.0 mm × 1.0 mm
Wafer Level
Package
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 14.6 mΩ, 12 V, N-Channel device is designed to
deliver the lowest on resistance and gate charge in a
small 1 x 1 mm outline with excellent thermal
characteristics and an ultra low profile.
Top View
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
12
V
VGS
Gate-to-Source Voltage
±10
V
ID
Continuous Drain Current (1)
1.6
A
IDM
Pulsed Drain Current (2)
29
A
PD
Power Dissipation (3)
1.8
W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 150
°C
(1) Device Operating at a temperature of 105ºC
(2) Min Cu Typ RθJA = 275ºC/W, Pulse width ≤100 μs, duty cycle
≤1%
(3) Max Cu Typ RθJA = 70ºC/W
RDS(on) vs VGS
Gate Charge
5
TC = 25° C, I D = 1 A
TC = 125° C, I D = 1 A
30
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-State Resistance (m:)
35
25
20
15
10
5
0
ID = 1 A
VDS = 6 V
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
VGS - Gate-To-Source Voltage (V)
7
8
D007
0
1
2
3
4
5
Qg - Gate Charge (nC)
6
7
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD13302W
SLPS535 – MARCH 2015
www.ti.com
Table of Contents
1
2
3
4
5
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Specifications.........................................................
1
1
1
2
3
6
Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 CSD13302W Package Dimensions .......................... 8
7.2 Tape and Reel Information ....................................... 9
4 Revision History
2
DATE
REVISION
NOTES
March 2015
*
Initial release.
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Product Folder Links: CSD13302W
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SLPS535 – MARCH 2015
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 , ID = 250 μA
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 9.6 V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 10 V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250 μA
V
RDS(on)
Drain-to-Source On-Resistance
gƒs
Transconductance
12
V
1.0
1.3
VGS = 2.5 V, ID = 1 A
0.7
21.2
25.8
VGS = 4.5 V, ID = 1 A
14.6
17.1
VDS = 1.2 V, ID = 1 A
10
mΩ
S
DYNAMIC CHARACTERISTICS
CISS
Input Capacitance
COSS
Output Capacitance
663
862
pF
211
274
pF
CRSS
Rg
Reverse Transfer Capacitance
151
196
pF
Series Gate Resistance
3.6
7.2
Ω
Qg
Gate Charge Total (4.5 V)
6.0
7.8
nC
Qgd
Gate Charge Gate-to-Drain
Qgs
Gate Charge Gate-to-Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tƒ
Fall Time
VGS = 0 V, VDS = 6 V, ƒ = 1 MHz
VDS = 6 V, ID = 1 A
VDS = 6 V, VGS = 0 V
VDS = 6 V, VGS = 4.5 V, ID = 1 A
RG = 0 Ω
2.1
nC
0.7
nC
0.7
nC
1.3
nC
6
ns
7
ns
17
ns
7
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
IS = 1 A, VGS = 0 V
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
0.7
VDS= 6 V, IS = 1 A, di/dt = 200 A/μs
1.0
V
11.6
nC
19.6
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
RθJA
(1)
(2)
MIN
TYP
Junction-to-Ambient Thermal Resistance (1)
275
Junction-to-Ambient Thermal Resistance (2)
70
MAX
UNIT
°C/W
Device mounted on FR4 material with minimum Cu mounting area.
Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
P-Chan 1.0x1.0 CSP TTA MAX Rev1
P-Chan 1.0x1.0 CSP TTA MIN Rev1
Typical RθJA =
275°C/W when
mounted on minimum
pad area of 2 oz. Cu.
Typical RθJA = 70°C/W
when mounted on
1 inch2 of 2 oz. Cu.
M0149-01
M0150-01
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CSD13302W
SLPS535 – MARCH 2015
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5.3 Typical MOSFET Characteristics
(TA = 25°C unless otherwise stated)
Figure 1. Transient Thermal Impedance
4
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SLPS535 – MARCH 2015
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
60
18
IDS - Drain-To-Source Current (A)
IDS - Drain-to-Source Current (A)
20
16
14
12
10
8
6
4
VGS = 2.5 V
VGS = 3.5 V
VGS = 4.5 V
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
VDS - Drain-to-Source Voltage (V)
0.7
TC = 125° C
TC = 25° C
TC = -55° C
50
40
30
20
10
0
0.6
0.8
1
1.4
1.8
2.2
2.6
VGS - Gate-To-Source Voltage (V)
D002
3
D003
VDS = 5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
10000
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
4
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
5
4.5
3.5
3
2.5
2
1.5
1000
100
1
0.5
0
10
0
1
2
ID = 1 A
3
4
5
Qg - Gate Charge (nC)
6
7
0
2
D004
4
6
8
10
VDS - Drain-to-Source Voltage (V)
12
D005
VDS = 6 V
Figure 4. Gate Charge
Figure 5. Capacitance
35
RDS(on) - On-State Resistance (m:)
1.4
VGS(th) - Threshold Voltage (V)
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-75
TC = 25° C, I D = 1 A
TC = 125° C, I D = 1 A
30
25
20
15
10
5
0
-50
-25
0
25
50
75 100
TC - Case Temperature (qC)
125
150
175
0
1
D006
2
3
4
5
6
VGS - Gate-To-Source Voltage (V)
7
8
D007
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
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SLPS535 – MARCH 2015
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Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
10
1.3
VGS = 2.5 V
VGS = 4.5 V
1.2
1.1
1
0.9
0.8
0.7
-75
TC = 25qC
TC = 125qC
ISD - Source-To-Drain Current (A)
Normalized On-State Resistance
1.4
1
0.1
0.01
0.001
0.0001
-50
-25
0
25
50
75 100
TC - Case Temperature (qC)
125
150
0
175
0.2
0.4
0.6
0.8
VSD - Source-To-Drain Voltage (V)
D008
1
D009
ID = 1 A
Figure 9. Typical Diode Forward Voltage
Figure 8. Normalized On-State Resistance vs Temperature
4.5
IDS - Drain-to-Source Current (A)
IDS - Drain-To-Source Current (A)
100
10
1
100 ms
10 ms
0.1
0.1
1 ms
100 µs
10 µs
1
10
VDS - Drain-To-Source Voltage (V)
50
4
3.5
3
2.5
2
1.5
1
0.5
0
-45
-20
D010
5
30
55
80
105 130
TC - Case Temperature (qC)
155
180
D011
Single Pulse, Max RθJA = 275°C/W
Figure 10. Maximum Safe Operating Area
6
Figure 11. Maximum Drain Current vs Temperature
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Product Folder Links: CSD13302W
CSD13302W
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SLPS535 – MARCH 2015
6 Device and Documentation Support
6.1 Trademarks
NexFET is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
6.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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Product Folder Links: CSD13302W
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CSD13302W
SLPS535 – MARCH 2015
www.ti.com
7 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
7.1 CSD13302W Package Dimensions
Pin 1
Mark
1
Solder Ball
Ø 0.31 ±0.075
2
2
1
A
1.00
0.50
+0.00
–0.10
A
B
B
1.00
+0.00
–0.10
0.50
Side View
Bottom View
0.04
0.62 Max
0.38
Top View
0.62 Max
Seating Plate
Front View
M0151-01
NOTE: All dimensions are in mm (unless otherwise specified)
Pin Configuration Table
8
POSITION
DESIGNATION
A2
Source
A1
Gate
B1, B2
Drain
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CSD13302W
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SLPS535 – MARCH 2015
Land Pattern Recommendation
Ø 0.25
1
2
0.50
A
B
0.50
M0152-01
NOTE: All dimensions are in mm (unless otherwise specified)
7.2 Tape and Reel Information
4.00 ±0.10
Ø 1.50 ±0.10
4.00 ±0.10
Ø 0.50 ±0.05
0.78 ±0.05
1.18 ±0.05
5° Max
3.50 ±0.05
8.00
+0.30
–0.10
1.75 ±0.10
2.00 ±0.05
0.254 ±0.02
1.18 ±0.05
5° Max
M0153-01
NOTE: All dimensions are in mm (unless otherwise specified
space
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Product Folder Links: CSD13302W
9
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CSD13302W
ACTIVE
DSBGA
YZB
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
CSD13302WT
ACTIVE
DSBGA
YZB
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
302
-55 to 150
302
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of