CSD16413Q5A

CSD16413Q5A www.ti.com SLPS199A – AUGUST 2009 – REVISED APRIL 2010 N-Channel NexFET™ Power MOSFET Check for Samples: CSD16413Q5A FEATURES 1 • • • • • • • 2 PRODUCT SUMMARY Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5mm × 6mm Plastic Package VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 9 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage • nC 4.1 mΩ VGS = 10V 3.1 mΩ 1.6 V ORDERING INFORMATION Device Package CSD16413Q5A SON 5 × 6 Plastic Package APPLICATIONS • 2.5 VGS = 4.5V Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems Optimized for Control or Synchronous FET Applications Media 13-inch reel Qty Ship 2500 Tape and Reel ABSOLUTE MAXIMUM RATINGS VALUE UNIT VDS Drain to Source Voltage 25 V DESCRIPTION VGS Gate to Source Voltage +16 / –12 V ID Continuous Drain Current, TC = 25°C 100 A The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Continuous Drain Current(1) 24 A IDM Pulsed Drain Current, TA = 25°C(2) 156 A Top View PD Power Dissipation(1) 3.1 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse ID = 46A, L = 0.1mH, RG = 25Ω 106 mJ S 1 8 D S 2 7 D S 3 6 D G 4 5 D TA = 25°C unless otherwise stated (1) RqJA = 41°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300ms, duty cycle ≤2% D P0093-01 RDS(ON) vs VGS Gate Charge 12 ID = 24A 18 10 16 VG − Gate Voltage − V RDS(on) − On-State Resistance − mΩ 20 14 12 10 TC = 125°C 8 6 4 ID = 24A VDS = 12.5V 8 6 4 2 2 TC = 25°C 0 0 2 4 6 8 VGS − Gate to Source Voltage − V 10 12 G006 0 0.0 2.5 5.0 7.5 10.0 12.5 Qg − Gate Charge − nC 15.0 17.5 20.0 G003 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2010, Texas Instruments Incorporated CSD16413Q5A SLPS199A – AUGUST 2009 – REVISED APRIL 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250mA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 20V IGSS Gate to Source Leakage Current VDS = 0V, VGS = +16/-12V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250mA RDS(on) Drain to Source On Resistance gfs Transconductance 25 V 1 mA 100 nA 1.6 1.9 V VGS = 4.5V, ID = 24A 4.1 5.6 mΩ VGS = 10V, ID = 24A 3.1 3.9 mΩ VDS = 15V, ID = 24A 95 1.2 S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance 1370 1780 pF 1060 1380 CRSS pF Reverse Transfer Capacitance 84 109 pF Rg Series Gate Resistance 0.9 1.8 Ω Qg Gate Charge Total (4.5V) 9 11.7 nC Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time VGS = 0V, VDS = 12.5V f = 1MHz VDS = 12.5V, ID = 24A VDS = 13.1V, VGS = 0V VDS = 12.5V, VGS = 4.5V ID = 24A RG = 5Ω 2.5 nC 3.5 nC 2.2 nC 21 nC 9.1 ns 15.9 ns 10.7 ns 5.7 ns Diode Characteristics VSD Diode Forward Voltage IS = 24A, VGS = 0V Qrr Reverse Recovery Charge VDD = 13.1V, IF = 24A, di/dt = 300A/ms 0.85 32 1 nC V trr Reverse Recovery Time VDD = 13.1V, IF = 24A, di/dt = 300A/ms 28 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER R qJC R qJA (1) (2) 2 Thermal Resistance Junction to Case (1) Thermal Resistance Junction to Ambient (1) (2) MIN TYP MAX UNIT 2.6 °C/W 51 °C/W RqJC is determined with the device mounted on a 1 inch square 2 oz. Cu pad on a 1.5 × 1.5 in .060 inch thick FR4 board. RqJC is specified by design while RqJA is determined by the user’s board design. Device mounted on FR4 Material with 1 inch2 of 2 oz. Cu. Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16413Q5A CSD16413Q5A www.ti.com SLPS199A – AUGUST 2009 – REVISED APRIL 2010 GATE GATE Source N-Chan 5x6 QFN TTA MIN Rev3 N-Chan 5x6 QFN TTA MAX Rev3 Max RqJA = 51°C/W when mounted on 1 inch2 of 2 oz. Cu. Source Max RqJA = 118°C/W when mounted on minimum pad area of 2 oz. Cu. DRAIN DRAIN M0137-02 M0137-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA – Normalized Thermal Impedance 10 1 0.5 0.3 Duty Cycle = t1/t2 0.1 0.1 0.05 0.01 P t1 0.02 0.01 t2 RqJA = 95°C/W (min Cu) TJ = P ´ ZqJA ´ RqJA Single Pulse 0.001 0.001 0.01 0.1 1 10 100 1k tp – Pulse Duration – s G012 Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16413Q5A 3 CSD16413Q5A SLPS199A – AUGUST 2009 – REVISED APRIL 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 80 80 60 VGS = 4.5V VGS = 3V 50 VGS = 3.5V 40 30 20 VGS = 2.5V 10 0 0.0 VDS = 5V 70 VGS = 10V ID − Drain Current − A ID − Drain Current − A 70 60 50 TC = 125°C 40 30 TC = 25°C 20 TC = −55°C 10 0.5 1.0 1.5 2.0 2.5 0 1.0 3.0 VDS − Drain to Source Voltage − V 1.5 C − Capacitance − nF VG − Gate Voltage − V 6 4 G002 3.0 COSS = CDS + CGD 2.5 CISS = CGD + CGS 2.0 1.5 1.0 CRSS = CGD 0.5 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 Qg − Gate Charge − nC 0 5 10 15 20 VDS − Drain to Source Voltage − V G003 Figure 4. Gate Charge 25 G004 Figure 5. Capacitance 2.5 20 RDS(on) − On-State Resistance − mΩ VGS(th) − Threshold Voltage − V 4.0 f = 1MHz VGS = 0V 3.5 2 ID = 250µA 2.0 1.5 1.0 0.5 ID = 24A 18 16 14 12 10 TC = 125°C 8 6 4 2 TC = 25°C 0 −25 25 75 125 175 TC − Case Temperature − °C 0 2 4 6 8 10 VGS − Gate to Source Voltage − V G005 Figure 6. Threshold Voltage vs. Temperature 4 3.5 4.0 ID = 24A VDS = 12.5V 8 0.0 −75 3.0 Figure 3. Transfer Characteristics 12 0 0.0 2.5 VGS − Gate to Source Voltage − V G001 Figure 2. Saturation Characteristics 10 2.0 12 G006 Figure 7. On Resistance vs. Gate Voltage Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16413Q5A CSD16413Q5A www.ti.com SLPS199A – AUGUST 2009 – REVISED APRIL 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) 1.4 100 ID = 24A VGS = 10V ISD − Source to Drain Current − A Normalized On-State Resistance 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −75 10 1 TC = 125°C 0.1 TC = 25°C 0.01 0.001 0.0001 −25 25 75 125 175 TC − Case Temperature − °C 0.0 0.8 1.0 1.2 G008 100 I(AV) − Peak Avalanche Current − A 100 ID − Drain Current − A 0.6 Figure 9. Typical Diode Forward Voltage 1k 1ms 10 10ms 100ms Area Limited by RDS(on) 1s 0.1 Single Pulse RqJA = 95oC/W (min Cu) 0.01 0.01 0.4 VSD − Source to Drain Voltage − V G007 Figure 8. On Resistance vs. Temperature 1 0.2 0.1 DC 1 10 10 TC = 125°C 1 0.001 100 VDS − Drain To Source Voltage − V TC = 25°C 0.01 0.1 1 10 t(AV) − Time in Avalanche − ms G009 Figure 10. Maximum Safe Operating Area 100 G010 Figure 11. Single Pulse Unclamped Inductive Switching 120 ID − Drain Current − A 100 80 60 40 20 0 −50 −25 0 25 50 75 100 125 TC − Case Temperature − °C 150 175 G011 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16413Q5A 5 CSD16413Q5A SLPS199A – AUGUST 2009 – REVISED APRIL 2010 www.ti.com MECHANICAL DATA Q5A Package Dimensions L E2 H K 7 D2 3 4 b 4 5 5 6 3 6 e D1 7 2 2 8 8 1 1 q L1 Top View Bottom View Side View c A q E1 E Front View M0135-01 DIM 6 MILLIMETERS MIN NOM MAX A 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 0.25 0.30 D1 4.80 4.90 5.00 D2 3.61 3.81 3.96 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.38 3.58 3.78 e 1.27 BSC H 0.41 0.51 0.61 K 1.10 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 q 0° Submit Documentation Feedback 12° Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16413Q5A CSD16413Q5A www.ti.com SLPS199A – AUGUST 2009 – REVISED APRIL 2010 MILLIMETERS INCHES Recommended PCB Pattern DIM MIN MAX MIN MAX F1 F1 6.205 6.305 0.244 0.248 F2 4.46 4.56 0.176 0.18 F3 4.46 4.56 0.176 0.18 F4 0.65 0.7 0.026 0.028 F5 0.62 0.67 0.024 0.026 F6 0.63 0.68 0.025 0.027 F7 0.7 0.8 0.038 0.031 F8 0.65 0.7 0.026 0.028 F9 0.62 0.67 0.024 0.026 F7 F3 8 1 F2 F11 F5 F9 5 4 F6 F10 4.9 5 0.193 0.197 F11 4.46 4.56 0.176 0.18 F8 F4 F10 M0139-01 For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. K0 4.00 ±0.10 (See Note 1) 0.30 ±0.05 2.00 ±0.05 +0.10 –0.00 12.00 ±0.30 Ø 1.50 1.75 ±0.10 Q5A Tape and Reel Information 5.50 ±0.05 B0 R 0.30 MAX A0 8.00 ±0.10 Ø 1.50 MIN A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 R 0.30 TYP M0138-01 Notes: 1. 10 sprocket hole pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm IN 100mm, noncumulative over 250mm 3. Material:black static dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. A0 and B0 measured on a plane 0.3mm above the bottom of the pocket 6. MSL1 260°C (IR and Convection) PbF Reflow Compatible Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16413Q5A 7 CSD16413Q5A SLPS199A – AUGUST 2009 – REVISED APRIL 2010 www.ti.com REVISION HISTORY Changes from Original (August 2009) to Revision A • 8 Page Deleted the Package Marking Information section ............................................................................................................... 7 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16413Q5A PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD16413Q5A ACTIVE VSONP DQJ 8 2500 RoHS-Exempt & Green SN Level-1-260C-UNLIM -55 to 150 CSD16413 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of