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CSD25302Q2

CSD25302Q2

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SMD6

  • 描述:

    MOSFET P-CH 20V 5A 6SON

  • 数据手册
  • 价格&库存
CSD25302Q2 数据手册
CSD25302Q2 SLPS234B – NOVEMBER 2009 – REVISED JANUARY 2012 www.ti.com P-Channel NexFET™ Power MOSFET FEATURES 1 • • • • • • • PRODUCT SUMMARY Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 2-mm × 2-mm Plastic Package VDS Drain to Source Voltage –20 V Qg Gate Charge Total (–4.5V) 2.6 nC Qgd Gate Charge Gate to Drain RDS(on) VGS(th) nC 71 mΩ VGS = –2.5V 56 mΩ VGS = –4.5V 39 mΩ –0.65 Threshold Voltage V ORDERING INFORMATION APPLICATIONS • • • Drain to Source On Resistance 0.5 VGS = –1.8V Battery Management Load Management Battery Protection Device Package Media Qty Ship CSD25302Q2 SON 2-mm × 2-mm Plastic Package 13-Inch Reel 3000 Tape and Reel ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C unless otherwise stated VALUE UNIT The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on resistance coupled with the extremely small footprint and low profile make the device ideal for battery operated space constrained applications. VDS Drain to Source Voltage –20 V VGS Gate to Source Voltage ±8 V Continuous Drain Current, TC = 25°C –5 A Continuous Drain Current(1) –5 A IDM Pulsed Drain Current, TA = 25°C(2) –20 A PD Power Dissipation 2.4 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C Top View S ID (1) Package Limited (2) Pulse duration 10 µs, duty cycle ≤2% 1 6 S 5 S 4 D S S 2 G 3 D P0112-01 RDS(on) vs VGS GATE CHARGE 6 ID = −3A 125 −VGS − Gate Voltage − V RDS(on) − On-State Resistance − mΩ 150 100 TC = 125°C 75 50 5 ID = −3A VDS = −10V 4 3 2 1 25 TC = 25°C 0 1 2 3 4 5 6 −VGS − Gate to Source Voltage − V 7 8 G006 0 0.0 0.5 1.0 1.5 2.0 Qg − Gate Charge − nC 2.5 3.0 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2012, Texas Instruments Incorporated CSD25302Q2 SLPS234B – NOVEMBER 2009 – REVISED JANUARY 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS TA = 25°C, unless otherwise specified PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, IDS = –250μA IDSS Drain to Source Leakage VGS = 0V, VDS = –16V IGSS Gate to Source Leakage VDS = 0V, VGS = ±8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, IDS = –250μA RDS(on) gfs Drain to Source On Resistance Transconductance –20 –0.5 V –1 μA –100 nA –0.65 –0.9 VGS = –1.8V, IDS = –3.0A 71 92 mΩ VGS = –2.5V, IDS = –3.0A 56 70 mΩ VGS = –4.5V, IDS = –3.0A 39 49 mΩ VDS = –10V, IDS = –3.0A 12.3 V S Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance 270 350 pF 120 150 CRSS pF Reverse Transfer Capacitance 40 55 pF Qg Gate Charge Total (–4.5V) 2.6 3.4 nC Qgd Gate Charge – Gate to Drain 0.5 nC Qgs Gate Charge Gate to Source 0.54 nC Qg(th) Gate Charge at Vth 0.2 nC QOSS Output Charge 2.3 nC td(on) Turn On Delay Time 3.2 ns tr Rise Time 13.2 ns td(off) Turn Off Delay Time 8.6 ns tf Fall Time 1.3 ns VGS = 0V, VDS = –10V, f = 1MHz VDS = –10V, IDS = –3.0A VDS = –13V, VGS = 0V VDS = –10V, VGS = –4.5V, IDS = –3.0A, RG = 2Ω Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time IDS = –3.0A, VGS = 0V –0.8 Vdd= –13V, IF = –3.0A, di/dt = 300A/μs –1.0 V 2.5 nC 8.8 ns THERMAL CHARACTERISTICS TA = 25°C, unless otherwise specified TYP MAX UNIT RθJC Thermal Resistance Junction to Case (1) PARAMETER 8.6 °C/W RθJA Thermal Resistance Junction to Ambient (1) (2) 66 °C/W (1) (2) 2 MIN RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated CSD25302Q2 SLPS234B – NOVEMBER 2009 – REVISED JANUARY 2012 www.ti.com GATE GATE Source Source Max RθJA = 66°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. Max RθJA = 207°C/W when mounted on minimum pad area of 2-oz. (0.071-mm thick) Cu. DRAIN DRAIN M0161-02 M0161-01 TYPICAL MOSFET CHARACTERISTICS TA = 25°C, unless otherwise specified ZθJA − Normalized Thermal Impedance 10 1 0.5 0.3 0.1 Duty Cycle = t1/t2 0.1 0.05 P 0.01 0.02 0.01 t1 t2 Single Pulse 0.001 0.0001 0.001 Typical RθJA = 166°C/W (min Cu) TJ = P × ZθJA × RθJA 0.01 0.1 1 10 100 tP − Pulse Duration − s 1k G012 Figure 1. Transient Thermal Impedance Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 3 CSD25302Q2 SLPS234B – NOVEMBER 2009 – REVISED JANUARY 2012 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) 5.0 5.0 4.5 4.5 4.0 4.0 3.5 −ID − Drain Current − A −ID − Drain Current − A TA = 25°C, unless otherwise specified VGS = −4.5V 3.0 VGS = −3.5V 2.5 VGS = −2.5V 2.0 VGS = −2V 1.5 1.0 VGS = −1.8V VDS = −5V 3.5 TC = 125°C 3.0 2.5 TC = 25°C 2.0 1.5 1.0 TC = −55°C 0.5 0.5 0.0 0.0 0.0 0.5 0.2 0.4 0.6 0.8 1.0 −VDS − Drain to Source Voltage − V 0.7 G001 Figure 2. Saturation Characteristics 1.3 1.5 G002 0.4 ID = −3A VDS = −10V f = 1MHz VGS = 0V C − Capacitance − nF −VGS − Gate Voltage − V 1.1 Figure 3. Transfer Characteristics 6 5 0.9 −VGS − Gate to Source Voltage − V 4 3 2 0.3 COSS = CDS + CGD 0.2 CISS = CGD + CGS CRSS = CGD 0.1 1 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Qg − Gate Charge − nC 0 5 G003 Figure 4. Gate Charge RDS(on) − On-State Resistance − mΩ −VGS(th) − Threshold Voltage − V 20 G004 150 ID = −250µA 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ID = −3A 125 100 TC = 125°C 75 50 25 TC = 25°C 0 −25 25 75 125 175 TC − Case Temperature − °C Figure 6. Threshold Voltage vs. Temperature 4 15 Figure 5. Capacitance 0.9 0.0 −75 10 −VDS − Drain to Source Voltage − V Submit Documentation Feedback G005 1 2 3 4 5 6 −VGS − Gate to Source Voltage − V 7 8 G006 Figure 7. On-State Resistance vs. Gate to Source Voltage Copyright © 2009–2012, Texas Instruments Incorporated CSD25302Q2 SLPS234B – NOVEMBER 2009 – REVISED JANUARY 2012 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) TA = 25°C, unless otherwise specified 10 1.4 ID = −3A VGS = −4.5V −ISD − Source to Drain Current − A Normalized On-State Resistance 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0.0 −75 −25 25 75 125 175 TC − Case Temperature − °C 1 0.1 TC = 125°C 0.01 TC = 25°C 0.001 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 −VSD − Source to Drain Voltage − V G007 Figure 8. Normalized On-State Resistance vs. Temperature G008 Figure 9. Typical Diode Forward Voltage 100 6 −ID − Drain Current − A −ID − Drain Current − A 5 10 1ms 1 0.1 0.01 0.01 10ms Area Limited by RDS(on) 100ms 1s 1 3 2 1 Single Pulse Typical RθJA = 166°C/W (min Cu) 0.1 4 DC 10 −VD − Drain Voltage − V Figure 10. Maximum Safe Operating Area Copyright © 2009–2012, Texas Instruments Incorporated 100 G009 0 −50 −25 0 25 50 75 100 125 150 175 TC − Case Temperature − °C G011 Figure 11. Maximum Drain Current vs. Temperature Submit Documentation Feedback 5 CSD25302Q2 SLPS234B – NOVEMBER 2009 – REVISED JANUARY 2012 www.ti.com MECHANICAL DATA Q2 Package Dimensions D2 D K3 K1 K K2 4 4 5 6 8 K4 E 7 E1 E2 5 E3 6 Pin 1 Dot 2 3 3 L 1 Top View 2 1 Pin 1 ID e b D1 Pinout A A1 C Bottom View Source 1, 2, 5, 6, 8 Gate 3 Drain 4, 7 Front View M0175-01 DIM MILLIMETERS MIN NOM MAX MIN NOM MAX A 0.700 0.750 0.800 0.028 0.030 0.032 A1 0.000 0.050 0.000 b 0.250 0.350 0.010 0.300 C 0.203 TYP D 2.000 TYP D1 0.900 0.950 D2 0.300 TYP E 2.000 TYP E1 0.900 1.000 0.002 0.012 0.080 TYP 1.000 0.036 0.038 0.080 TYP 1.100 0.036 0.040 0.280 TYP 0.0112 TYP 0.470 TYP 0.0188 TYP e 0.650 BSC 0.026 TYP K 0.280 TYP 0.0112 TYP K1 0.350 TYP 0.014 TYP K2 0.200 TYP 0.008 TYP K3 0.200 TYP 0.008 TYP 0.470 TYP 0.200 Submit Documentation Feedback 0.25 0.040 0.012 TYP E3 L 0.014 0.008 TYP E2 K4 6 INCHES 0.044 0.0188 TYP 0.300 0.008 0.010 0.0121 Copyright © 2009–2012, Texas Instruments Incorporated CSD25302Q2 SLPS234B – NOVEMBER 2009 – REVISED JANUARY 2012 www.ti.com Recommended PCB Pattern 1.40 0.85 1.05 0.22 2.30 1.10 0.65 TYP 1 0.46 0.40 TYP 0.25 M0167-01 Note: All dimensions are in mm, unless otherwise specified. For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing through PCB Layout Techniques. Q2 Tape and Reel Information 4.00 ±0.10 Ø 1.50 ±0.10 4.00 ±0.10 Ø 1.00 ±0.25 1.00 ±0.05 2.30 ±0.05 10° Max 3.50 ±0.05 8.00 +0.30 –0.10 1.75 ±0.10 2.00 ±0.05 0.254 ±0.02 2.30 ±0.05 10° Max M0168-01 Notes: 1. Measured from centerline of sprocket hole to centerline of pocket 2. Cumulative tolerance of 10 sprocket holes is ±0.20 3. Other material available 4. Typical SR of form tape Max 108 OHM/SQ 5. All dimensions are in mm, unless otherwise specified. Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 7 CSD25302Q2 SLPS234B – NOVEMBER 2009 – REVISED JANUARY 2012 www.ti.com REVISION HISTORY Changes from Original (November 2009) to Revision A • Deleted the Package Marking Information section ............................................................................................................... 8 Changes from Revision A (October 2010) to Revision B • 8 Page Page Added ESDS statement ........................................................................................................................................................ 2 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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