CSD25304W1015

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents CSD25304W1015 SLPS510A – JULY 2014 – REVISED AUGUST 2014 CSD25304W1015 20-V P-Channel NexFET™ Power MOSFET 1 Features • • • • • • • 1 Product Summary Ultra-Low Qg and Qgd Small Footprint Low Profile 0.62 mm Height Pb Free RoHS Compliant Halogen Free CSP 1 × 1.5 mm Wafer Level Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage –20 V Qg Gate Charge Total (4.5 V) 3.3 nC Qgd Gate Charge Gate-to-Drain Drain-to-Source OnResistance RDS(on) VGS(th) 0.5 nC VGS = –1.8 V 65 mΩ VGS = –2.5 V 36 mΩ VGS = –4.5 V 27 mΩ Voltage Threshold 2 Applications • • • UNIT VDS –0.8 V Ordering Information(1) Battery Management Load Switch Battery Protection Device Qty Media Package Ship CSD25304W1015 3000 7-Inch Reel CSD25304W1015T 250 7-Inch Reel 1.0 mm × 1.5 mm Wafer Level Package Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. Top View D S S D S Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage –20 V VGS Gate-to-Source Voltage ±8 V ID Continuous Drain Current(1) –3.0 A IDM Pulsed Drain Current(2) –41 A PD Power Dissipation 0.75 W TJ, Tstg Operating Junction and Storage Temperature Range –55 to 150 °C (1) Device operating at a temperature of 105ºC (2) Typ RθJA = 165°C/W, Pulse width ≤100 μs, duty cycle ≤1% G P0099-01 RDS(on) vs VGS Gate Charge 4.5 TC = 25°C, I D = −1.5 A TC = 125°C, I D = −1.5 A 70 − VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 80 60 50 40 30 20 0 1 2 3 4 5 6 − VGS - Gate-to- Source Voltage (V) 7 8 G001 ID = −1.5A VDS = −10V 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 Qg - Gate Charge (nC) 3 3.5 G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD25304W1015 SLPS510A – JULY 2014 – REVISED AUGUST 2014 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 6 Device and Documentation Support.................... 7 6.1 Trademarks ............................................................... 7 6.2 Electrostatic Discharge Caution ................................ 7 6.3 Glossary .................................................................... 7 7 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 CSD25304W1015 Package Dimensions .................. 8 7.2 Land Pattern Recommendation ................................ 9 7.3 Tape and Reel Information ....................................... 9 4 Revision History Changes from Original (July 2014) to Revision A Page • Reduced power dissipation rating to 0.75 W (min Cu calculation) ........................................................................................ 1 • Corrected Min Thermal Information from 85 to 165 .............................................................................................................. 3 • Corrected Max Thermal Information from 165 to 85 ............................................................................................................. 3 • Updated the mechanical drawing to add more precision ...................................................................................................... 8 2 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25304W1015 CSD25304W1015 www.ti.com SLPS510A – JULY 2014 – REVISED AUGUST 2014 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = –250 μA IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = –16 V IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = ±8 V VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = –250 μA RDS(on) Drain-to-Source On-Resistance gƒs Transconductance –20 –0.55 V –1 μA –100 nA –0.8 –1.15 VGS = –1.8 V, ID = –1.5 A 65 92 mΩ V VGS = –2.5 V, ID = –1.5 A 36 45.5 mΩ VGS = –4.5 V, ID = –1.5 A 27 32.5 mΩ VDS = –10 V, ID = –1.5 A 12 S DYNAMIC CHARACTERISTICS CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain Qgs Gate Charge Gate-to-Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tƒ Fall Time 458 VGS = 0 V, VDS = –10 V, ƒ = 1 MHz VDS = –10 V, ID = –1.5 A VDS = –10 V, VGS = 0 V VDS = –10 V, VGS = –4.5 V, ID = –1.5 A RG = 20 Ω 595 pF 231 300 pF 12 15.6 pF 3.3 4.4 nC 0.5 nC 0.7 nC 0.4 nC 3.7 nC 6 ns 4 ns 24 ns 10 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage IS = –1.5 A, VGS = 0 V –0.75 –1 V Qrr Reverse Recovery Charge VDS= –10 V, IF = –1.5 A, di/dt = 200 A/μs 7.2 nC trr Reverse Recovery Time VDS= –10 V, IF = –1.5 A, di/dt = 200 A/μs 11.6 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC RθJA (1) (2) MIN TYP Junction-to-Ambient Thermal Resistance (1) 165 Junction-to-Ambient Thermal Resistance (2) 85 MAX UNIT °C/W Device mounted on FR4 material with minimum Cu mounting area. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25304W1015 3 CSD25304W1015 SLPS510A – JULY 2014 – REVISED AUGUST 2014 www.ti.com P-Chan 1.0x1.5 CSP TTA MAX Rev1 P-Chan 1.0x1.5 CSP TTA MIN Rev1 Typ RθJA = 165°C/W when mounted on minimum pad area of 2 oz. Cu. Typ RθJA = 85°C/W when mounted on 1 inch2 of 2 oz. Cu. M0155-01 M0156-01 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance 4 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25304W1015 CSD25304W1015 www.ti.com SLPS510A – JULY 2014 – REVISED AUGUST 2014 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 10 VGS = −4.5 V VGS = −2.5 V VGS = −1.8 V 9 8 − IDS - Drain-to-Source Current (A) − IDS - Drain-to-Source Current (A) 10 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 − VDS - Drain-to-Source Voltage (V) 0.9 8 6 4 0 1 TC = 125°C TC = 25°C TC = −55°C 2 0 0.2 G001 0.4 0.6 0.8 1 1.2 1.4 1.6 − VGS - Gate-to-Source Voltage (V) 1.8 2 G001 VDS = –5 V Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics 600 4 500 3.5 C − Capacitance (pF) − VGS - Gate-to-Source Voltage (V) 4.5 3 2.5 2 1.5 1 400 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 300 200 100 0.5 0 0 0.5 1 1.5 2 2.5 Qg - Gate Charge (nC) ID = –1.5 A 3 0 3.5 0 2 4 6 8 10 12 14 16 − VDS - Drain-to-Source Voltage (V) G001 20 G001 VDS = –10 V Figure 4. Gate Charge Figure 5. Capacitance 80 RDS(on) - On-State Resistance (mΩ) 1.1 − VGS(th) - Threshold Voltage (V) 18 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 −75 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 TC = 25°C, I D = −1.5 A TC = 125°C, I D = −1.5 A 70 60 50 40 30 20 0 1 2 3 4 5 6 − VGS - Gate-to- Source Voltage (V) 7 8 G001 ID = –250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25304W1015 5 CSD25304W1015 SLPS510A – JULY 2014 – REVISED AUGUST 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 1.3 10 VGS = −2.5V VGS = −4.5V − ISD − Source-to-Drain Current (A) Normalized On-State Resistance 1.4 1.2 1.1 1 0.9 0.8 0.7 −75 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 TC = 25°C TC = 125°C 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 − VSD − Source-to-Drain Voltage (V) 1 G001 ID = –1.5 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage 3.5 − IDS - Drain- to- Source Current (A) − IDS - Drain-to-Source Current (A) 100 10 1 10us 100us 1ms 0.1 0.1 10ms 100ms 1 10 − VDS - Drain-to-Source Voltage (V) 100 3.0 2.5 2.0 1.5 1.0 0.5 0.0 −50 −25 G001 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Single Pulse, Max RθJA = 165°C/W Figure 10. Maximum Safe Operating Area 6 Figure 11. Maximum Drain Current vs Temperature Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25304W1015 CSD25304W1015 www.ti.com SLPS510A – JULY 2014 – REVISED AUGUST 2014 6 Device and Documentation Support 6.1 Trademarks NexFET is a trademark of Texas Instruments. 6.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25304W1015 7 CSD25304W1015 SLPS510A – JULY 2014 – REVISED AUGUST 2014 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 CSD25304W1015 Package Dimensions NOTE: All dimensions are in mm (unless otherwise specified). Pinout 8 Position Designation C1, C2 Drain A1 Gate A2, B1, B2 Source Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25304W1015 CSD25304W1015 www.ti.com SLPS510A – JULY 2014 – REVISED AUGUST 2014 7.2 Land Pattern Recommendation Ø 0.25 1 2 1.00 0.50 A B C 0.50 M0158-01 NOTE: All dimensions are in mm (unless otherwise specified). 7.3 Tape and Reel Information 4.00 ±0.10 Ø 1.50 ±0.10 4.00 ±0.10 Ø 0.60 0.86 ±0.05 +0.05 –0.10 1.65 ±0.05 2° Max 3.50 ±0.05 8.00 +0.30 –0.10 1.75 ±0.10 2.00 ±0.05 0.254 ±0.02 1.19 ±0.05 2° Max M0159-01 NOTE: All dimensions are in mm (unless otherwise specified). Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD25304W1015 9 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) CSD25304W1015 ACTIVE DSBGA YZC 6 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM CSD25304W1015T ACTIVE DSBGA YZC 6 250 RoHS & Green SNAGCU Level-1-260C-UNLIM 25304 -55 to 150 25304 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of