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DAC7551ZTDRNRQ1

DAC7551ZTDRNRQ1

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    USON12

  • 描述:

    DAC7551-Q1 AUTOMOTIVE 12-BIT, UL

  • 数据手册
  • 价格&库存
DAC7551ZTDRNRQ1 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents DAC7551-Q1 SLAS767B – JUNE 2011 – REVISED MARCH 2015 DAC7551-Q1 12-Bit, Ultra-Low Glitch, Voltage Output Digital-to-Analog Converter 1 Features 3 Description • • • • • • • • • • • The DAC7551-Q1 device is a single-channel, voltageoutput digital-to-analog converter (DAC) with exceptional linearity and monotonicity, and a proprietary architecture that minimizes glitch energy. The low-power DAC7551-Q1 device operates from a single 2.7- to 5.5-V supply. The DAC7551-Q1 output amplifiers can drive a 2-kΩ, 200-pF load rail-to-rail with 5-μs settling time. The output range is set using an external voltage reference. 1 • • • • • Qualified for Automotive Applications Relative Accuracy (INL): ±0.35 LSB Ultra-Low Glitch Energy: 0.1 nV-s Low-Power Operation: 100 μA at 2.7 V Power-On Reset-to-Zero Scale Power Supply: 2.7- to 5.5-V Single Supply Power-Down: 0.05 μA at 2.7 V 12-Bit Linearity and Monotonicity Rail-to-Rail Voltage Output Settling Time: 5 μs (Max) SPI-Compatible Serial Interface With SchmittTrigger Input: Up to 50 MHz Daisy-Chain Capability Asynchronous Hardware Clear-to-Zero Scale Specified Temperature Range: –40°C to +105°C Small, 2-mm × 3-mm, 12-Lead USON Package Z-Suffix Offers Improved Delamination The 3-wire serial interface operates at clock rates up to 50 MHz and is compatible with SPI™, QSPI™, microwire, and DSP interface standards. The device incorporates a power-on-reset (POR) circuit to ensure that the DAC output powers up to 0 V and remains at that voltage until a valid write cycle to the device occurs. The device contains a power-down feature that reduces the current consumption of the device to under 2 μA. Small size and low-power operation make the DAC7551-Q1 device ideally suited for batteryoperated, portable applications. The power consumption is typically 0.5 mW at 5 V, 0.23 mW at 3 V, and reduces to 1 μW in power-down mode. 2 Applications • • • • • • • • The DAC7551-Q1 device is available in a 12-pin USON package and is specified over –40°C to +105°C. The Z-suffix offers reduced delamination compared to standard device. Portable, Battery-Powered Instruments Digital Gain and Offset Adjustment Programmable Voltage and Current Sources Programmable Attenuators Industrial Process Control ADAS Radar Applications Collision Warning Blind-Spot Detection Device Information(1) PART NUMBER DAC7551-Q1 PACKAGE USON (12) BODY SIZE (NOM) 2.00 mm × 3.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Functional Block Diagram VDD VREFH IOVDD VFB SCLK _ SYNC Interface Logic Shift Register DAC Register String DAC VOUT + SDIN Power-On Reset SDO CLR Power-Down Logic GND VREFL 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. DAC7551-Q1 SLAS767B – JUNE 2011 – REVISED MARCH 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 6.1 6.2 6.3 6.4 6.5 6.6 6.7 3 4 4 4 4 6 7 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Timing Requirements ................................................ Typical Characteristics .............................................. Detailed Description ............................................ 11 7.1 Overview ................................................................. 11 7.2 Functional Block Diagram ....................................... 11 7.3 Feature Description................................................. 11 7.4 Device Functional Modes........................................ 13 7.5 Programming........................................................... 14 8 Application and Implementation ........................ 15 8.1 Application Information............................................ 15 8.2 Typical Application .................................................. 16 9 Power Supply Recommendations...................... 17 10 Layout................................................................... 18 10.1 Layout Guidelines ................................................. 18 10.2 Layout Example .................................................... 18 11 Device and Documentation Support ................. 19 11.1 11.2 11.3 11.4 Documentation Support ........................................ Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 19 19 19 19 12 Mechanical, Packaging, and Orderable Information ........................................................... 19 4 Revision History Changes from Revision A (February 2015) to Revision B Page • Added ADAS radar, collision warning, and blind-spot detection to Applications list ............................................................. 1 • Changed the thermal information values for the DRN (USON) package in the Thermal Information table .......................... 4 Changes from Original (June 2011) to Revision A Page • Added the ESD Ratings table, Recommended Operating Conditions table, Feature Description section, Device Functional Modes section, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................................................................................................... 1 • Released the Z-suffix orderable part number, DAC7551ZTDRNRQ1, which offers improved delamination ........................ 1 2 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 DAC7551-Q1 www.ti.com SLAS767B – JUNE 2011 – REVISED MARCH 2015 5 Pin Configuration and Functions DRN Package 12-Pin USON With Exposed Thermal Pad Top View (1) VDD 1 12 IOVDD VREFH 2 11 SDO VREFL 3 10 SDIN VFB 4 9 SCLK VOUT 5 8 SYNC GND 6 7 CLR Thermal Pad(1) The thermal pad should be connected to GND. Pin Functions PIN NO. NAME I/O DESCRIPTION 1 VDD I Analog voltage supply input 2 VREFH I Positive reference voltage input 3 VREFL I Negative reference voltage input 4 VFB I DAC amplifier sense input. 5 VOUT O Analog output voltage from DAC 6 GND — Ground. 7 CLR I Asynchronous input to clear the DAC registers. When the CLR pin is low, the DAC register is set to 000h and the output voltage to 0 V. 8 SYNC I Frame synchronization input. The falling edge of the SYNC pulse indicates the start of a serial data frame shifted out to the DAC7551-Q1 device. 9 SCLK I Serial clock input 10 SDIN I Serial data input 11 SDO O Serial data output 12 IOVDD I I/O voltage supply input 6 Specifications 6.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted). (1) MIN MAX UNIT VDD , IOVDD to GND –0.3 6 V Digital input voltage to GND –0.3 VDD + 0.3 V VOUT to GND –0.3 VDD + 0.3 V Operating temperature range –40 105 °C 150 °C Junction temperature, TJ max Power dissipation (DRN) (TJ max – TA) / RθJA Storage temperature, Tstg –65 (1) 150 °C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may affect device reliability. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 3 DAC7551-Q1 SLAS767B – JUNE 2011 – REVISED MARCH 2015 www.ti.com 6.2 ESD Ratings VALUE Human-body model (HBM), per AEC Q100-002 (1) V(ESD) (1) Electrostatic discharge Charged-device model (CDM), per AEC Q100-011 UNIT ±2000 All pins ±500 Corner pins (1, 6, 7, and 12) ±750 V AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN VDD VREFH 0.25 VREFL 0 VFB VI Input voltage Output voltage TJ Operating junction temperature MAX UNIT 5.5 VDD GND 0 IOVDD VO NOM 2.7 VDD VDD 1.8 VDD CLR 0 IOVDD SYNC 0 IOVDD SCLK 0 IOVDD SDIN 0 IOVDD SDO 0 IOVDD VOUT 0 VDD 150 V V °C 6.4 Thermal Information DRN (USON) THERMAL METRIC (1) RθJA Junction-to-ambient thermal resistance 49.8 RθJC(top) Junction-to-case (top) thermal resistance 45.8 RθJB Junction-to-board thermal resistance 18.2 ψJT Junction-to-top characterization parameter 0.8 ψJB Junction-to-board characterization parameter 18.3 RθJC(bot) Junction-to-case (bottom) thermal resistance 2.9 (1) UNIT 12 PINS °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 6.5 Electrical Characteristics all specifications at –40°C to +105°C, VDD = 2.7 to 5.5 V, VREFH = VDD, VREFL = GND, RL = 2 kΩ to GND, and CL = 200 pF to GND (unless otherwise noted). PARAMETER STATIC PERFORMANCE TEST CONDITIONS MIN TYP MAX UNIT ±0.35 ±1 LSB ±0.08 ±0.5 LSB ±12 mV (1) Resolution 12 Relative accuracy Differential nonlinearity Specified monotonic by design Bits Offset error Zero-scale error All zeroes loaded to DAC register ±12 Gain error Full-scale error Zero-scale error drift Gain temperature coefficient (1) 4 mV ±0.15 %FSR ±0.5 %FSR 7 μV/°C 3 ppm of FSR/°C Linearity tested using a reduced code range of 30 to 4065; output unloaded. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 DAC7551-Q1 www.ti.com SLAS767B – JUNE 2011 – REVISED MARCH 2015 Electrical Characteristics (continued) all specifications at –40°C to +105°C, VDD = 2.7 to 5.5 V, VREFH = VDD, VREFL = GND, RL = 2 kΩ to GND, and CL = 200 pF to GND (unless otherwise noted). PARAMETER PSRR Power-supply rejection ratio TEST CONDITIONS MIN VDD = 5 V TYP MAX 0.75 UNIT mV/V OUTPUT CHARACTERISTICS (2) 2× VREFL Output voltage range Output voltage settling time RL = 2 kΩ, 0 pF < CL < 200 pF 1.8 Capacitive load stability Digital-to-analog glitch impulse V μs 5 Slew rate RL = ∞ V/μs 470 RL = 2 kΩ pF 1000 1 LSB change around major carry 0.1 Digital feedthrough THD VREFH nV-s 0.1 nV-s Output noise density 10kHz offset frequency 120 nV/√Hz Total harmonic distortion fOUT = 1 kHz, fS = 1 MSPS, BW = 20 kHz –85 dB 1 Ω DC output impedance Short-circuit current Power-up time VDD = 5 V 50 VDD = 3 V 20 Coming out of power-down mode, VDD = 5 V 15 Coming out of power-down mode, VDD = 3 V 15 mA μs REFERENCE INPUT VREFH input range 0 VREFL input range VREFL < VREFH 0 Reference input impedance Reference current VDD GND V VDD 100 V kΩ VREF = VDD = 5 V 50 100 VREF = VDD = 3 V 30 60 μA LOGIC INPUTS (2) Input current VIN_L Input low voltage IOVDD ≥ 2.7 V VIN_H Input high voltage IOVDD ≥ 2.7 V ±1 μA 0.3 IOVDD V 0.7 IOVDD V Pin capacitance 3 pF POWER REQUIREMENTS VDD Supply voltage 2.7 5.5 V IOVDD I/O supply voltage (3) 1.8 VDD V IDD Supply current (4) Normal operation VDD = 3.6 to 5.5 V, VIH = IOVDD, VIL = GND (DAC active and excluding load current) VDD = 2.7 to 3.6 V, VIH = IOVDD, VIL = GND All power-down modes 150 200 100 150 VDD = 3.6 to 5.5 V, VIH = IOVDD, VIL = GND 0.2 2 VDD = 2.7 to 3.6 V, VIH = IOVDD, VIL = GND 0.05 2 ILOAD = 2 mA, VDD = 5 V 93% μA μA POWER EFFICIENCY IOUT/IDD TEMPERATURE RANGE Specified performance (2) (3) (4) –40 105 °C Specified by design and characterization; not production tested. For 1.8 V < IOVDD < 2.7 V, TI recommends that VIH ≥ 0.8 IOVDD, and VIL ≤ 0.2 IOVDD. IOVDD operates down to 1.8 V with slightly degraded timing, as long as VIH ≥ 0.8 IOVDD and VIL ≤ 0.2 IOVDD. IDD tested with digital input code = 0032. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 5 DAC7551-Q1 SLAS767B – JUNE 2011 – REVISED MARCH 2015 www.ti.com 6.6 Timing Requirements (1) All specifications at –40°C to +105°C, VDD = 2.7 to 5.5 V, and RL = 2 kΩ to GND (unless otherwise noted). See Figure 1. MIN t1 (2) SCLK cycle time t2 SCLK HIGH time t3 SCLK LOW time t4 SYNC falling edge to SCLK falling edge setup time t5 Data setup time t6 Data hold time t7 SCLK falling edge to SYNC rising edge t8 Minimum SYNC HIGH time t9 SCLK falling edge to SDO valid t10 CLR pulse width low (1) (2) (3) MAX VDD = 2.7 V to 3.6 V 20 VDD = 3.6 V to 5.5 V 20 VDD = 2.7 V to 3.6 V 6.5 VDD = 3.6 V to 5.5 V 6.5 VDD = 2.7 V to 3.6 V 6.5 VDD = 3.6 V to 5.5 V 6.5 VDD = 2.7 V to 3.6 V 4 VDD = 3.6 V to 5.5 V 4 VDD = 2.7 V to 3.6 V 3 VDD = 3.6 V to 5.5 V 3 VDD = 2.7 V to 3.6 V 3 VDD = 3.6 V to 5.5 V 3 VDD = 2.7 V to 3.6 V 0 t1 – 10 ns (3) VDD = 3.6 V to 5.5 V 0 t1 – 10 ns (3) VDD = 2.7 V to 3.6 V 20 VDD = 3.6 V to 5.5 V 20 VDD = 2.7 V to 3.6 V 10 VDD = 3.6 V to 5.5 V 10 VDD = 2.7 V to 3.6 V 10 VDD = 3.6 V to 5.5 V 10 UNIT ns ns ns ns ns ns ns ns ns ns All input signals are specified with tR = tF = 1 ns (10% to 90% of VDD) and timed from a voltage level of (VIL + VIH) / 2. Maximum SCLK frequency is 50 MHz at VDD = 2.7 to 5.5 V. SCLK falling edge to SYNC rising edge time shold not exceed (t1 – 10 ns) to latch the correct data. t1 SCLK t8 t2 t3 t4 t7 SYNC t5 SDIN D15 t6 D14 D13 D12 D11 D1 D0 Input Word n SDO D15 D0 t9 D15 Input Word n+1 D14 D0 Input Word n Undefined t10 CLR Figure 1. Serial Write Operation Timing Diagram 6 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 DAC7551-Q1 www.ti.com SLAS767B – JUNE 2011 – REVISED MARCH 2015 6.7 Typical Characteristics 1.0 1.0 0.5 0.5 LE (LSB) LE (LSB) At TA = 25°C, unless otherwise noted. 0 -1.0 -1.0 0.50 0.50 0.25 0.25 DLE (LSB) DLE (LSB) 0 -0.5 -0.5 0 -0.25 0 -0.25 -0.50 -0.50 0 512 1024 1536 2048 2560 3072 3584 0 4096 512 1024 VREFH = 4.096 V VDD = 2.7 V VREFL = GND 2560 3072 3584 4096 VREFH = 2.5 V VREFL = GND Figure 3. Linearity Error and Differential Linearity Error vs Digital Input Code 1.00 1.00 0.75 0.75 0.50 0.25 0.50 0.25 0 0 -40 -10 20 50 80 105 -40 -10 VDD = 5 V VREFH = 4.096 V 20 50 80 105 Free-Air Temperature (°C) Free-Air Temperature (°C) VREFL = GND VDD = 2.7 V VREFH = 2.5 V VREFL = GND Figure 4. Zero-Scale Error vs Free-Air Temperature Figure 5. Zero-Scale Error vs Free-Air Temperature 0 0 -0.25 -0.25 Full-Scale Error (mV) Full-Scale Error (mV) 2048 Figure 2. Linearity Error and Differential Linearity Error vs Digital Input Code Zero-Scale Error (mV) Zero-Scale Error (mV) VDD = 5 V 1536 Digital Input Code Digital Input Code -0.50 -0.75 -1.00 -0.50 -0.75 -1.00 -40 -10 20 50 80 105 -40 Free-Air Temperature (°C) VDD = 5 V VREFH = 4.096 V -10 20 50 80 105 Free-Air Temperature (°C) VREFL = GND Figure 6. Full-Scale Error vs Free-Air Temperature VDD = 2.7 V VREFH = 2.5 V VREFL = GND Figure 7. Full-Scale Error vs Free-Air Temperature Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 7 DAC7551-Q1 SLAS767B – JUNE 2011 – REVISED MARCH 2015 www.ti.com Typical Characteristics (continued) At TA = 25°C, unless otherwise noted. 5.5 VDD = VREFH = 5.5V 0.15 Output Voltage, VO (V) Output Voltage, VO (V) 0.20 VDD = 2.7 V VREFH = 2.5 V VREFL = GND 0.10 VDD = 5.5 V VREFH = 4.096 V VREFL = GND 0.05 VREFL = GND 5.4 5.3 DAC Loaded with FFFFh 0 5.2 0 5 10 15 0 5 Sink Current, ISINK (mA) 10 15 ISOURCE (mA) DAC loaded with 0000h Figure 8. Sink Current at Negative Rail (Typical) Figure 9. Source Current at Positive Rail 250 VDD = VREFH = 2.7V VREFL = GND 2.6 VDD = 5.5 V VREFH = 4.096 V VREFL = GND 200 Supply Current (µA) Output Voltage, VO (V) 2.7 2.5 150 VDD = 2.7 V VREFH = 2.5 V VREFL = GND 100 50 DAC Loaded with FFFFh 0 2.4 0 5 10 512 0 15 1024 ISOURCE (mA) 1536 2048 2560 Digital Input Code Powered 4096 No load 110 200 VDD = 5.5 V VREFH = 4.096 V VREFL = GND 175 150 Supply Current (µA) Supply Current (µA) 3584 Figure 11. Supply Current vs Digital Input Code Figure 10. Source Current at Positive Rail VDD = 2.7 V VREFH = 2.5 V VREFL = GND 125 105 100 95 90 100 -40 -10 20 50 80 110 3.1 2.7 3.5 Powered 3.9 4.3 4.7 5.1 5.5 Supply Voltage (V) Free-Air Temperature (°C) No load DAC powered, no load Figure 12. Supply Current vs Free-Air Temperature 8 3072 VREFH = 2.5 V VREFL = GND Figure 13. Supply Current vs Supply Voltage Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 DAC7551-Q1 www.ti.com SLAS767B – JUNE 2011 – REVISED MARCH 2015 Typical Characteristics (continued) At TA = 25°C, unless otherwise noted. 2000 1200 1500 VDD = 5.5 V VREFH = 4.096 V VREFL = GND 800 Frequency (Hz) Supply Current (µA) 1600 1000 VDD = 2.7 V VREFH = 2.5 V VREFL = GND 400 500 0 0 0 1 2 3 4 5 128 136 VLOGIC (V) TA = 25°C SCLK input Digital input code = 2048 VDD = 5.5 V VREFH = 4.096 V All other inputs = GND 1500 2 Total Error (mV) Frequency (Hz) 4 500 192 VREFL = GND 0 -2 0 -4 117 124 131 138 145 152 159 Current Consumption (µA) Digital input code = 2048 VDD = 2.7 V VREFH = 2.5 V 166 0 173 512 VDD = 5 V TA = 25°C VREFL = GND Figure 16. Histogram of Current Consumption, 2.7 V 1024 1536 2048 2560 Digital Input Code 3072 VREFH = 4.096 V 3584 4096 VREFL = GND Figure 17. Total Error, 5 V 5 Output Voltage, VO (V) 4 2 Total Error (mV) 184 Figure 15. Histogram of Current Consumption, 5.5 V Figure 14. Supply Current vs Logic Input Voltage 2000 1000 144 152 160 168 176 Current Consumption (µA) 0 -2 4 3 2 1 0 -4 0 512 1024 1536 2048 2560 3072 3584 Digital Input Code VDD = 2.7 V TA = 25°C VREFH = 2.5 V Time (4 µs/div) 4096 VREFL = GND Power-up code = 4000 VDD = 5 V VREFH = 4.096 V Figure 18. Total Error, 2.7 V VREFL = GND Figure 19. Exiting Power-Down Mode Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 9 DAC7551-Q1 SLAS767B – JUNE 2011 – REVISED MARCH 2015 www.ti.com Typical Characteristics (continued) At TA = 25°C, unless otherwise noted. 3 4 Output Voltage, VO (V) Output Voltage, VO (V) 5 3 2 1 0 2 1 0 Time (5 µs/div) Time (5 µs/div) Output loaded with 200 pF to GND Code 0041 to 4055 VDD = 5 V VREFH = 4.096 V VREFL = GND Output loaded with 200 pF to GND Code 0041 to 4055 VDD = 2.7 V VREFH = 2.5 V VREFL = GND Figure 21. Large-Signal Settling Time, 2.7 V Output Voltage, VO (5 mV/div) Output Voltage, VO (5 mV/div) Figure 20. Large-Signal Settling Time, 5 V Trigger Pulse Trigger Pulse Time (400 ns/div) Time (400 ns/div) Figure 22. Midscale Glitch Figure 23. Worst-Case Glitch VO (5mV/div) Total Harmonic Distortion (dB) -40 Trigger Pulse -50 -60 -70 THD -80 2nd Harmonic -90 3rd Harmonic -100 0 Time (400ns/div) 1 2 3 4 5 6 7 Output Frequency, Tone (kHz) 8 9 10 VDD = 5.5 V VREFH = 4.096 V VREFL = GND fS = 1 MSPS –1-dB FSR digital input Measurement bandwidth = 20 kHz Figure 24. Digital Feedthrough Error 10 Figure 25. Total Harmonic Distortion vs Output Frequency Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 DAC7551-Q1 www.ti.com SLAS767B – JUNE 2011 – REVISED MARCH 2015 7 Detailed Description 7.1 Overview The DAC7551-Q1 device is a 12-bit resistor-string digital-to-analog converter (DAC). Unbuffered external reference inputs allow for a positive voltage reference as low as 0.25 V and as high as VDD. An amplifierfeedback input is available for better DC accuracy at the load point. The device is controlled over a 16-bit word three-wire serial peripheral interface (SPI) up to 50 MHz with an option to daisy-chain multiple devices. An asynchronous clear function along with power-down features allows for software controlled resets and low-power consumption. A separate logic-supply input means the device can be used with different logic families across a wide range of supply voltages. 7.2 Functional Block Diagram VDD VREFH IOVDD VFB SCLK _ Interface Logic SYNC Shift Register DAC Register VOUT String DAC + SDIN Power-On Reset SDO Power-Down Logic CLR GND VREFL 7.3 Feature Description 7.3.1 Digital-to-Analog Converter The architecture of the DAC7551-Q1 device consists of a string DAC followed by an output buffer amplifier. Figure 26 shows a generalized block diagram of the DAC architecture. VREFH 100 kW 100 kW VFB 50 kW DAC Register REF(+) Resistor String REF(-) VOUT VREFL Figure 26. Typical DAC Architecture The input coding to the DAC7551-Q1 device is unsigned binary, which gives the ideal output voltage as show in Equation 1. VOUT = 2 × VREFL + (VREFH – VREFL) × D / 4096 where • D is the decimal equivalent of the binary code that is loaded to the DAC register, which ranges from 0 to 4095. (1) Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 11 DAC7551-Q1 SLAS767B – JUNE 2011 – REVISED MARCH 2015 www.ti.com Feature Description (continued) 7.3.2 Resistor String Figure 27 shows the resistor string section. This section is simply a string of resistors, each of value R. The digital code loaded to the DAC register determines at which node on the string the voltage is tapped off to be fed into the output amplifier. The voltage is tapped off by closing one of the switches connecting the string to the amplifier. The output of the DAC is specified monotonic because it is a string of resistors. VREFH RDIVIDER VREFH - VREFL 2 R R To Output Amplifier (2× Gain) R R VREFL Figure 27. Typical Resistor String 7.3.3 Output Buffer Amplifiers The output buffer amplifier is capable of generating rail-to-rail voltages on the output, providing an output range of 0 V to VDD. The amplifier is capable of driving a load of 2 kΩ in parallel with up to 1000 pF to ground. Figure 8, Figure 9, and Figure 10 show the sink and source capabilities of the output amplifier. The slew rate is 1.8 V/μs with a half-scale settling time of 3 μs with the output unloaded. 7.3.3.1 DAC External Reference Input The DAC7551-Q1 device contains VREFH and VREFL reference inputs which are unbuffered. The VREFH reference voltage can be as low as 0.25 V, and as high as VDD because there is no restriction of headroom and footroom from any reference amplifier. Using a buffered reference in the external circuit is recommended (for example, the REF3140 device). The input impedance is typically 100 kΩ. 12 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 DAC7551-Q1 www.ti.com SLAS767B – JUNE 2011 – REVISED MARCH 2015 Feature Description (continued) 7.3.3.2 Amplifier Sense Input The DAC7551-Q1 device contains an amplifier-feedback input pin, VFB. For voltage output operation, VFB must be externally connected to VOUT. For better DC accuracy, this connection should be made at load points. The VFB pin is also useful for a variety of applications, including digitally-controlled current sources. The feedback input pin is internally connected to the DAC amplifier negative input terminal through a 100-kΩ resistor. The amplifier negative input terminal internally connects to ground through another 100-kΩ resistor (see Figure 26). These connections form a gain-of-two, noninverting, amplifier configuration. Overall gain remains 1 because the resistor string has a divide-by-two configuration. The resistance seen at the VFB pin is approximately 200 kΩ to ground. 7.3.3.3 Power-On Reset On power up, all registers are cleared and the DAC channel is updated with zero-scale voltage. The DAC output remains in this state until valid data are written. This setup is particularly useful in applications where knowing the state of the DAC output while the device is powering up is important. To not turn on ESD protection devices, VDD and IOVDD should be applied before any other pin (such as VREFH) is brought high. The power-up sequence of VDD and IOVDD is irrelevant. Therefore, IOVDD can be brought up before VDD, or the other way around. 7.3.3.4 Power Down The DAC7551-Q1 device has a flexible power-down capability. During a power-down condition, the user has flexibility to select the output impedance of the DAC. During power-down operation, the DAC can have either 1kΩ, 100kΩ, or Hi-Z output impedance to ground. 7.3.3.5 Asynchronous Clear The DAC7551-Q1 output is asynchronously set to zero-scale voltage immediately after the CLR pin is brought low. The CLR signal resets all internal registers and therefore functions similar to the power-on reset. The DAC7551-Q1 device updates at the first rising edge of the SYNC signal that occurs after the CLR pin is brought back to high. 7.3.3.6 IOVDD and Level Shifters The DAC7551-Q1 device can be used with different logic families that require a wide range of supply voltages. To enable this useful feature, the IOVDD pin must be connected to the logic supply voltage of the system. All DAC7551-Q1 digital input and output pins are equipped with level-shifter circuits. Level shifters at the input pins ensure that external logic-high voltages are translated to the internal logic-high voltage, with no additional power dissipation. Similarly, the level shifter for the SDO pin translates the internal logic-high voltage (VDD) to the external logic-high level (IOVDD). For single-supply operation, the IOVDD pin can be tied to the VDD pin. 7.3.4 Integral and Differential Linearity The DAC7551-Q1 device uses precision thin-film resistors providing exceptional linearity and monotonicity. Integral linearity error is typically within ±0.35 LSBs, and differential linearity error is typically within ±0.08 LSBs. 7.3.5 Glitch Energy The DAC7551-Q1 device uses a proprietary architecture that minimizes glitch energy. The code-to-code glitches are so low that they are usually buried within the wide-band noise and cannot be easily detected. The DAC7551-Q1 glitch is typically well under 0.1 nV-s. Such low glitch energy provides more than a ten-time improvement over industry alternatives. 7.4 Device Functional Modes The DAC7551-Q1 device uses four modes of operation. These modes are accessed by setting bit PD0 (DB13) and PD1 (DB14) in the control register. Table 1 shows how to control the operating mode with data bits PD0 (DB13) and PD1 (DB14). The DAC7551-Q1 device treats the power-down condition as data; all the operation modes are still valid for power down. Broadcasting a power-down condition to all the DAC7551-Q1 devices in a system is possible. Powering down a channel and updating data on other channels is also possible. Furthermore, writing to the DAC register or buffer of the DAC channel that is powered down is also possible. When the DAC is the powered on, the DAC contains this new value. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 13 DAC7551-Q1 SLAS767B – JUNE 2011 – REVISED MARCH 2015 www.ti.com Device Functional Modes (continued) When both the PD0 and PD1 bits are set to 0, the device works normally with the typical consumption of 100 µA at 2.7 V. For the three power-down modes, the supply current falls to 0.05 µA at 2.7 V. As listed in Table 1, three different power-down options are available. The VOUT pin can be connected internally to GND through a 1-kΩ resistor or a 100-kΩ resistor or can be open circuited (High-Z). In other words, DB14 and DB13 = 11 represent a power-down condition with High-Z output impedance for a selected channel. DB14 and DB13 = 01 and 10 represent a power-down condition with a 1-kΩ and 100-kΩ output impedance respectively. 7.5 Programming 7.5.1 Serial Interface The DAC7551-Q1 device is controlled over a versatile 3-wire serial interface, which operates at clock rates up to 50 MHz and is compatible with SPI, QSPI, Microwire, and DSP interface standards. Table 1. Serial Interface Programming CONTROL DATA BITS FUNCTION DB15 DB14 DB13 (PD1) DB12 (PD0) DB11–DB0 X X 0 0 data Normal mode X X 0 1 X Powerdown 1kΩ X X 1 0 X Powerdown 100kΩ X X 1 1 X Powerdown Hi-Z 7.5.1.1 16-Bit Word and Input Shift Register The input shift register is 16 bits wide. DAC data are loaded into the device as a 16-bit word under the control of a serial clock input, SCLK, as shown in Figure 1. The 16-bit word, listed in Table 1, consists of four control bits followed by 12 bits of DAC data. The data format is straight binary with all 0s corresponding to 0-V output and all 1s corresponding to full-scale output (VREF – 1 LSB). Data are loaded MSB first (bit 15) where the first two bits (DB15 and DB14) are don't care bits. Bit 13 and bit 12 (DB13 and DB12) determine either normal mode operation or power-down mode (see Table 1). The SYNC input is a level-triggered input that acts as a frame synchronization signal and chip enable. Data can only be transferred into the device while the SYNC pin is low. To begin the serial data transfer, the SYNC pin should be taken low, observing the minimum SYNC-to-SCLK falling edge setup time, t4. After the SYNC pin goes low, serial data is shifted into the device input shift register on the falling edges of SCLK for 16 clock pulses. The SPI is enabled after the SYNC pin becomes low and the data are continuously shifted into the shift register at each falling edge of the SCLK input. When the SYNC pin is brought high, the last 16 bits stored in the shift register are latched into the DAC register, and the DAC updates. 7.5.1.2 Daisy-Chain Operation Daisy-chain operation is used for updating serially-connected devices on the rising edge of the SYNC in. As long as the SYNC pin is high, the SDO pin is in a high-impedance state. When the SYNC pin is brought low the output of the internal shift register is tied to the SDO pin. As long as the SYNC pin is low, the SDO pin duplicates the SDIN signal with a 16-cycle delay. To support multiple devices in a daisy chain, the SCLK and SYNC signals are shared across all devices, and the SDO pin of one DAC7551-Q1 device should be tied to the SDIN pin of the next DAC7551-Q1 device. For n devices in such a daisy chain, 16n SCLK cycles are required to shift the entire input data stream. After 16n SCLK falling edges are received, following a falling SYNC signal, the data stream becomes complete and the SYNC pin can be brought high to update n devices simultaneously. SDO operation is specified at a maximum SCLK speed of 10 MHz. In daisy-chain mode, the use of a weak pulldown resistor on the SDO output pin, which provides the SDIN data for the next device in the chain, is recommended. For standalone operation, the maximum clock speed is 50 MHz. For daisy-chain operation, the maximum clock speed is 10 MHz. 14 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 DAC7551-Q1 www.ti.com SLAS767B – JUNE 2011 – REVISED MARCH 2015 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information 8.1.1 Waveform Generation As a result of the exceptional linearity and low glitch of the DAC7551-Q1 device, the device is well-suited for waveform generation (from DC to 10kHz). The DAC7551-Q1 large-signal settling time is 5 μs, supporting an update rate of 200 kSPS. However, the update rates can exceed 1 MSPS if the waveform to be generated consists of small voltage steps between consecutive DAC updates. To obtain a high dynamic range, the REF3140 device (4.096 V) or the REF02 device (5 V) is recommended for reference-voltage generation. 8.1.2 Generating ±5-V, ±10-V, and ±12-V Outputs For Precision Industrial Control Industrial control applications can require multiple feedback loops consisting of sensors, analog-to-digital converters (ADCs), microcontrollers (MCUs), DACs, and actuators. Loop accuracy and loop speed are the two important parameters of such control loops. 8.1.2.1 Loop Accuracy DAC offset, gain, and the integral linearity errors are not factors in determining the accuracy of the loop. As long as a voltage exists in the transfer curve of a monotonic DAC, the loop can find this voltage and settle to it. On the other hand, DAC resolution and differential linearity do determine the loop accuracy, because each DAC step determines the minimum incremental change the loop can generate. A DNL error less than –1 LSB (nonmonotonicity) can create loop instability. A DNL error greater than 1 LSB implies unnecessarily large voltage steps and missed voltage targets. With high DNL errors, the loop loses stability, resolution, and accuracy. Offering 12-bit ensured monotonicity and ±0.08-LSB typical DNL error, the DAC755x devices are great choices for precision control loops. 8.1.2.2 Loop Speed Many factors determine the control-loop speed, such as ADC conversion time, MCU speed, and DAC settling time. Typically, the ADC conversion time, and the MCU computation time are the two major factors that dominate the time constant of the loop. DAC settling time is rarely a dominant factor because ADC conversion times usually exceed DAC conversion times. DAC offset, gain, and linearity errors can slow the loop down only during the startup. When the loop reaches the steady-state operation, these errors do not affect loop speed any further. Depending on the ringing characteristics of the loop-transfer function, DAC glitches can also slow the loop down. With a 1-MSPS (small-signal) maximum data-update rate, the DAC7551-Q1 device can support high-speed control loops. Ultralow glitch energy of the DAC7551-Q1 device significantly improves loop stability and loop settling time. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 15 DAC7551-Q1 SLAS767B – JUNE 2011 – REVISED MARCH 2015 www.ti.com 8.2 Typical Application 8.2.1 Generating Industrial Voltage Ranges For control-loop applications, DAC gain and offset errors are not important parameters. This consideration could be exploited to lower trim and calibration costs in a high-voltage control-circuit design. Using a quad operational amplifier (OPA4130), and a voltage reference (REF3140), the DAC7551-Q1 can generate the wide voltage swings required by the control loop. DAC7551 Vtail R1 REF3140 R2 VREF VREFH _ DAC7551 Vdac OPA4130 VOUT + Figure 28. Low-cost, Wide-swing Voltage Generator for Control-Loop Applications 8.2.1.1 Design Requirements For ±5-V operation: R1 = 10 kΩ R2 = 15 kΩ Vtail = 3.33 V VREF = 4.096 V For ±10-V operation: R1 = 10 kΩ R2 = 39 kΩ Vtail = 2.56 V VREF = 4.096 V For ±12-V operation: R1 = 10 kΩ R2 = 49 kΩ Vtail = 2.45 V VREF = 4.096 V 8.2.1.2 Detailed Design Procedure Use Equation 2 to calculate the output voltage of the configuration. æ R2 ö SDIN æ R2 ö VOUT = VREF ç + 1÷ - Vtail ç ÷ è R1 ø 4096 è R1 ø (2) Fixed R1 and R2 resistors can be used to coarsely set the gain required in the first term of the equation. When R2 and R1 set the gain to include some minimal over-range gain, a single DAC7551-Q1 device can be used to set the required offset voltages. Residual errors are not an issue for loop accuracy because offset and gain errors can be tolerated. One DAC7551-Q1 device can provide the Vtail voltages, while four additional DAC7551Q1 devices can provide the Vdac voltages to generate four high-voltage outputs. A single SPI is sufficient to control all five DAC7551-Q1 devices in a daisy-chain configuration. 16 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 DAC7551-Q1 www.ti.com SLAS767B – JUNE 2011 – REVISED MARCH 2015 Typical Application (continued) 8.2.1.3 Application Curves Figure 29. SDIN Step Increments of 273 for ±5-V Operation Figure 30. SDIN Step Increments of 273 for ±10-V Operation Figure 31. SDIN Step Increments of 273 for ±12-V Operation 9 Power Supply Recommendations The power applied to the VDD pin should be well regulated and low noise. Switching power supplies and DC-DC converters often have high frequency glitches or spikes riding on the output voltage. In addition, digital components can create similar high-frequency spikes as the internal logic switches states. This noise can easily couple into the DAC output voltage through various paths between power connections and analog output. As with the GND connection, the VDD pin should be connected to a power-supply plane of trace that is separate from the connection for digital logic until they are connected at the power-entry point. In addition, the use of a 1-µF and 10-µF capacitor and a 0.1-µF bypass capacitor is strongly recommended. In some situations, additional bypassing may be required, such as a 100-µF electrolytic capacitor or even a Pi filter made up of inductors and capacitors. These bypassing methods are all designed to low-pass filter the supply and remove the highfrequency noise. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 17 DAC7551-Q1 SLAS767B – JUNE 2011 – REVISED MARCH 2015 www.ti.com 10 Layout 10.1 Layout Guidelines A precision analog component requires careful layout, adequate bypassing, and clean, well-regulated power supplies. The DAC7551-Q1 device offers single-supply operation, and is often used in close proximity with digital logic, microcontrollers, microprocessors, digital signal processors, or a combination. The more digital logic present in the design and the higher the switching speed, the more difficult it is to prevent digital noise from appearing at the output. As a result of the single ground pin of the DAC7551-Q1 device, all return currents (including digital and analog return currents for the DAC) must flow through a single point. Ideally, the GND should be connected directly to an analog ground plane. This plane should be separate from the ground connection for the digital components until these components were connected at the power-entry point of the system. 10.2 Layout Example VI VI HighHigh-input frequency bypass bypass capacitor capacitor VI IOVDD 12 SDO 11 Power Ground SDIN 10 Thermal Pad SCLK 9 VOUT SYNC 8 GND CLR 7 1 VDD 2 VREFH 3 VREFL 4 VFB 5 6 Point-of-load Via to power ground plane Connection to MCU, MPU, or DSP Figure 32. DAC7551-Q1 Layout Example 18 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 DAC7551-Q1 www.ti.com SLAS767B – JUNE 2011 – REVISED MARCH 2015 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation For related documentation, see the following: • OPA4130 Low Power, Precision FET-INPUT OPERATIONAL AMPLIFIERS, SBOS053 • REF02 +5V Precision VOLTAGE REFERENCE, SBVS003 • REF3140 15ppm/°C Max, 100μA, SOT23-3 SERIES VOLTAGE REFERENCE, SBVS046 11.2 Trademarks SPI, QSPI are trademarks of Motorola, Inc. All other trademarks are the property of their respective owners. 11.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: DAC7551-Q1 19 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) DAC7551TDRNRQ1 ACTIVE USON DRN 12 3000 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 105 RAN DAC7551ZTDRNRQ1 ACTIVE USON DRN 12 3000 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 105 SJT (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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DAC7551ZTDRNRQ1
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