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DRV8839
SLVSBN4C – JANUARY 2013 – REVISED AUGUST 2016
DRV8839 Low-Voltage Dual ½-H-Bridge Driver IC
1 Features
3 Description
•
The DRV8839 provides a versatile power driver
solution for cameras, consumer products, toys, and
other low-voltage or battery-powered applications.
The device has two independent ½-H-bridge drivers
and can drive one DC motor or one winding of a
stepper motor, as well as other devices like
solenoids. The output stages use N-channel power
MOSFETs configured as ½-H-bridges. An internal
charge pump generates needed gate-drive voltages.
1
•
•
•
•
•
Dual ½-H-Bridge Motor Driver
– Drives a DC Motor or One Winding of a
Stepper Motor, or Other Loads
– Low MOSFET ON-Resistance:
HS + LS 280 mΩ
1.8-A Maximum Drive Current
Separate Motor and Logic Supply Pins:
– 0-V to 11-V Motor-Operating Supply-Voltage
– 1.8-V to 7-V Logic Supply-Voltage
Individual ½-H-Bridge Control Input Interface
Low-Power Sleep Mode With 120-nA Maximum
Combined Supply Current
2.00-mm × 3.00-mm 12-Pin WSON Package
2 Applications
•
The DRV8839 can supply up to 1.8-A of output
current. It operates on a motor power supply voltage
from 0 V to 11 V and a device power supply voltage
of 1.8 V to 7 V.
The DRV8839 has independent input and enable pins
for each ½-H-bridge which allow independent control
of each output.
Internal shutdown functions are provided for
overcurrent protection, short-circuit protection,
undervoltage lockout, and overtemperature.
Battery-Powered:
– DSLR Lenses
– Consumer Products
– Toys
– Robotics
– Cameras
– Medical Devices
The DRV8839 is packaged in a 12-pin,
2.00-mm × 3.00-mm WSON package (Eco-friendly:
RoHS and no Sb/Br).
Device Information(1)
PART NUMBER
DRV8839
PACKAGE
WSON (12)
BODY SIZE (NOM)
2.00 mm × 3.00 mm
(1) For all available packages, see the Orderable Addendum at
the end of the data sheet.
Simplified Schematic
VCC = 1.8 V to 7 V
VM = 0 V to 11 V
Controller
PWM
nSLEEP
DRV8839
Brushed DC
Motor or ½
Stepper Motor
Driver
1.8 A
BDC
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV8839
SLVSBN4C – JANUARY 2013 – REVISED AUGUST 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
4
4
4
4
5
5
7
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Timing Requirements ...............................................
Typical Characteristics ..............................................
Detailed Description .............................................. 8
7.1
7.2
7.3
7.4
Overview ...................................................................
Functional Block Diagram .........................................
Feature Description...................................................
Device Functional Modes..........................................
8
8
9
9
8
Application and Implementation ........................ 12
8.1 Application Information............................................ 12
8.2 Typical Application .................................................. 12
9
Power Supply Recommendations...................... 14
9.1 Bulk Capacitance .................................................... 14
10 Layout................................................................... 15
10.1 Layout Guidelines ................................................. 15
10.2 Layout Example .................................................... 15
10.3 Thermal Considerations ........................................ 15
11 Device and Documentation Support ................. 17
11.1
11.2
11.3
11.4
11.5
11.6
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
17
17
17
17
17
17
12 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (December 2015) to Revision C
Page
•
Deleted nFAULT from the Simplified Schematic .................................................................................................................... 1
•
Deleted the NC pins from the Pin Functions table ................................................................................................................. 3
•
Changed the value of the capacitor on the VM pin from 10 µF to 0.1 µF in the Typical Application Schematic ................. 12
•
Changed the Layout Guidelines to clarify the guidelines for the VM pin.............................................................................. 15
•
Deleted references to TI's PowerPAD package and updated it with thermal pad where applicable ................................... 16
•
Added the Receiving Notification of Documentation Updates section ................................................................................ 17
Changes from Revision A (January 2014) to Revision B
•
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
Changes from Original (January 2013) to Revision A
Page
•
Changed Features bullet ........................................................................................................................................................ 1
•
Changed motor supply voltage range in Description section ................................................................................................. 1
•
Changed Motor power supply voltage range in Recommended Operating Conditions ........................................................ 4
•
Added tOCR and tDEAD parameters to Electrical Characteristics .............................................................................................. 5
•
Added paragraph to Power Supplies and Input Pins section ............................................................................................... 14
2
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5 Pin Configuration and Functions
DSS Package
12-Pin WSON With Exposed Thermal Pad
Top View
VM
VM
OUT1
OUT2
GND
GND
1
12
2
11
3
GND
Thermal
Pad
4
10
9
5
8
6
7
VCC
nSLEEP
IN1
EN1
IN2
EN2
Pin Functions
PIN
NAME
NO.
I/O
(1)
EXTERNAL COMPONENTS
OR CONNECTIONS
DESCRIPTION
POWER AND GROUND
GND,
Thermal
pad
5, 6
—
Device ground
VCC
12
—
Device supply
Bypass to GND with a 0.1-μF, 6.3-V ceramic
capacitor
VM
1, 2
—
Motor supply
Bypass to GND with a 0.1-μF, 16-V ceramic
capacitor
EN1
9
I
Enable 1
Logic high enables OUT1
Internal pulldown resistor
EN2
7
I
Enable 2
Logic high enables OUT2
Internal pulldown resistor
IN1
10
I
Input 1
Logic input controls OUT1
Internal pulldown resistor
IN2
8
I
Input 2
Logic input controls OUT2
Internal pulldown resistor
nSLEEP
11
I
Sleep mode input
Logic low puts device in low-power sleep mode
Logic high for normal operation
Internal pulldown resistor
OUT1
3
O
Output 1
OUT2
4
O
Output 2
CONTROL
OUTPUT
(1)
Connect to motor winding
Directions: I = input, O = output, OZ = tri-state output, OD = open-drain output, IO = input/output.
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
MAX
UNIT
Power supply voltage, VM
–0.3
12
V
Power supply voltage, VCC
–0.3
7
V
Digital input pin voltage
–0.5
7
V
Internally limited
A
Peak motor drive output current
TJ
Operating junction temperature
–40
150
°C
Tstg
Storage temperature
–60
150
°C
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
6.2 ESD Ratings
VALUE
Electrostatic
discharge
V(ESD)
(1)
(2)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±4000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
TA = 25°C (unless otherwise noted)
MIN
VCC
Device power supply voltage
VM
VIN
MAX
UNIT
7
V
Motor power supply voltage
0
11
V
Logic level input voltage
0
5.5
V
(1)
IOUT
H-bridge output current
fPWM
Externally applied PWM frequency
(1)
NOM
1.8
0
1.8
A
0
250
kHz
Power dissipation and thermal limits must be observed.
6.4 Thermal Information
DRV8839
THERMAL METRIC
(1)
DSS (WSON)
UNIT
12 PINS
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
50.4
°C/W
58
°C/W
RθJB
ψJT
Junction-to-board thermal resistance
19.9
°C/W
Junction-to-top characterization parameter
0.9
°C/W
ψJB
Junction-to-board characterization parameter
20
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
6.9
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
TA = 25°C, VM = 5 V, VCC = 3 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
No PWM
40
100
µA
50 kHz PWM
0.8
1.5
mA
nSLEEP = 0 V
30
95
nA
No PWM
300
500
µA
50 kHz PWM
0.7
1.5
mA
5
25
nA
POWER SUPPLY
IVM
VM operating supply current
IVMQ
VM sleep mode supply current
IVCC
VCC operating supply current
IVCCQ
VCC sleep mode supply current
nSLEEP = 0 V
VUVLO
VCC undervoltage lockout
voltage
VCC rising
1.8
VCC falling
1.7
V
LOGIC-LEVEL INPUTS
VIL
Input low voltage
VIH
Input high voltage
0.31 × VCC 0.34 × VCC
0.39 × VCC 0.43 × VCC
VHYS
Input hysteresis
0.08 × VCC
IIL
Input low current
VIN = 0
IIH
Input high current
VIN = 3.3 V
RPD
Pulldown resistance
–5
V
V
V
5
μA
50
μA
100
kΩ
H-BRIDGE FETS
RDS(ON)
HS + LS FET on resistance
IOFF
OFF-state leakage current
I O = 800 mA, TJ = 25°C
280
330
mΩ
±200
nA
PROTECTION CIRCUITS
IOCP
Overcurrent protection trip level
tOCR
Overcurrent protection retry time
tDEAD
Output dead time
tTSD
Thermal shutdown temperature
6.6 Timing Requirements
1.9
3.5
A
1
ms
100
Die temperature
150
ns
160
180
°C
MIN
(1)
TA = 25°C, VM = 5 V, VCC = 3 V, RL = 20 Ω
(1)
MAX
UNIT
1
t1
Output enable time
120
ns
2
t2
Output disable time
120
ns
3
t3
Delay time, INx high to OUTx high
120
ns
4
t4
Delay time, INx low to OUTx low
120
ns
5
t5
Output rise time
50
150
ns
6
t6
Output fall time
50
150
ns
Not production tested – ensured by design
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INx
ENx
3
1
2
4
OUTx
OUTx
z
z
80%
80%
20%
20%
5
6
Figure 1. Timing Requirements
6
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6.7 Typical Characteristics
1.6
6000
VVM = 1.8 V, VVCC = 1.8 V
VVM = 2 V, VVCC = 2 V
VVM = 3.5 V, VVCC = 3.5 V
VVM = 7 V, VVCC = 7 V
1.2
-40qC
25qC
85qC
125qC
5500
5000
4500
4000
IVMQ (nA)
RDS(ON) (HS+LS) (:)
1.4
1
0.8
3500
3000
2500
2000
0.6
1500
1000
0.4
500
0.2
-40
0
-25
-10
5
20 35 50 65
Temperature (qC)
80
95
110 125
1
2
3
Figure 2. RDS(ON) HS + LS vs Temperature
6
7
VVM (V)
8
9
10
11
D002
1000
-40qC
25qC
85qC
125qC
500
450
400
-40qC
25qC
85qC
125qC
900
800
700
350
IVM (uA)
IVCCQ (nA)
5
Figure 3. IVMQ vs VVM
550
300
250
200
600
500
400
300
150
100
200
50
100
0
1.5
4
D001
0
2
2.5
3
3.5
4 4.5
VVCC (V)
5
5.5
6
6.5
7
1
2
3
4
5
D003
Figure 4. IVCCQ vs VVCC
6
7
VVM (V)
8
9
10
11
D004
Figure 5. IVM vs VVM (No PWM)
650
-40qC
25qC
85qC
125qC
600
550
IVCC (PA)
500
450
400
350
300
250
200
150
1.5
2
2.5
3
3.5
4 4.5
VVCC (V)
5
5.5
6
6.5
7
D005
Figure 6. IVCC vs VVCC (No PWM)
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7 Detailed Description
7.1 Overview
The DRV8839 is an integrated motor driver solution used for brushed motor control. The device integrates two
independent ½ H-bridge, and can drive one motor in both directions or two motors in one direction. The output
driver block for each ½ H-bridge consists of N-channel power MOSFETs. An internal charge pump generates the
gate drive voltages. Protection features include overcurrent protection, short-circuit protection, undervoltage
lockout, and overtemperature protection.
The DRV8839 allows separation of the motor voltage and logic voltage if desired. If VM and VCC are less than
7 V, the two voltages may be connected.
The control interface of the DRV8839 uses INx and ENx to control each ½ H-bridge separately.
7.2 Functional Block Diagram
0 to 11V
VM
VM
VM
Drives DC motor or
1/2 Stepper
1.8 to 7V
VCC
Gate
Drive
Charge
Pump
OCP
OUT1
Step
Motor
VCC
DCM
VM
Logic
IN1
OUT2
Gate
Drive
OCP
EN1
IN2
OverTemp
EN2
Osc
nSLEEP
GND
8
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7.3 Feature Description
7.3.1 Protection Circuits
The DRV8839 is fully protected against undervoltage, overcurrent, and overtemperature events.
7.3.1.1 Overcurrent Protection (OCP)
An analog current limit circuit on each FET limits the current through the FET by removing the gate drive. If this
analog current limit persists for longer than the OCP time, all FETs in the H-bridge disables. After approximately
1 ms, the bridge will be re-enabled automatically.
Overcurrent conditions on both high-side and low-side devices; a short to ground, supply, or across the motor
winding result in an overcurrent shutdown.
7.3.1.2 Thermal Shutdown (TSD)
If the die temperature exceeds safe limits, all FETs in the H-bridge disables. Operation automatically resumes
once the die temperature has fallen to a safe level.
7.3.1.3 Undervoltage Lockout (UVLO)
If at any time the voltage on the VCC pin falls below the undervoltage lockout threshold voltage, all circuitry in
the device disables and internal logic resets. Operation resumes when VCC rises above the UVLO threshold.
Table 1. Device Protection
FAULT
CONDITION
ERROR REPORT
INTERNAL
CIRCUITS
H-BRIDGE
RECOVERY
VCC undervoltage
(UVLO)
VCC < VUVLO
None
Disabled
Disabled
VCC > VUVLO
Overcurrent (OCP)
IOUT > IOCP
None
Disabled
Operating
tOCR
Thermal shutdown
(TSD)
TJ > TTSD
None
Disabled
Operating
TJ < TTSD – THYS
7.4 Device Functional Modes
The DRV8839 is active when the nSLEEP pin is set to a logic high. When in sleep mode, the ½ H-bridge FETs
are disabled (High-Z).
Table 2. Device Operating Modes
OPERATING MODE
CONDITION
H-BRIDGE
INTERNAL CIRCUITS
Operating
nSLEEP high
Operating
Operating
Sleep mode
nSLEEP low
Disabled
Disabled
Fault encountered
Any fault condition met
Disabled
See Table 1
7.4.1 Bridge Control
The DRV8839 is controlled using separate enable and input pins for each ½-H-bridge.
The following table shows the logic for the DRV8839:
Table 3. Bridge Control
ENx
INx
OUTx
0
X
Z
1
0
L
1
1
H
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7.4.2 Sleep Mode
If the nSLEEP pin reaches a logic-low state, the DRV8839 enters a low-power sleep mode. In this state all
unnecessary internal circuitry powers down.
7.4.3 Motor Connections
If a single DC motor connects to the DRV8839, it is connected between the OUT1 and OUT2 pins as shown in
Figure 7:
OUT1
DCM
OUT2
Figure 7. Single DC Motor Connection
Motor operation is controlled as show in Table 4.
Table 4. Single DC Motor Operation
(1)
(2)
10
EN1
EN2
IN1
IN2
OUT1
0
X
X
X
Z
OUT2
See
(2)
Z
(1)
MOTOR OPERATION
Off (coast)
X
0
X
X
See
1
1
0
0
L
L
Off (coast)
Brake
1
1
0
1
L
H
Reverse
1
1
1
0
H
L
Forward
1
1
1
1
H
H
Brake
State depends on EN2 and IN2, but does not affect motor operation because OUT1 is tri-stated.
State depends on EN1 and IN1, but does not affect motor operation because OUT2 is tri-stated.
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Two DC motors can be connected to the DRV8839. In this mode, it is not possible to reverse the direction of the
motors; they turn only in one direction. The connections are shown in Figure 8:
OUT1
DCM
OUT2
DCM
Figure 8. Dual DC Motor Connection
Motor operation is controlled shown in Table 5.
Table 5. Dual DC Motor Operation
ENx
INx
OUTx
MOTOR OPERATION
0
X
Z
Off (coast)
1
0
L
Brake
1
1
H
Forward
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV8839 is used in one control applications.
8.2 Typical Application
The following design is a common application of the DRV8839.
VM
VM
VCC
OUT1
0.1 µF
BDC
0.1 µF
VCC
OUT2
IN1
EN1
IN2
Controller
EN2
nSLEEP
GND
Thermal
Pad
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Figure 9. Typical Application Schematic
8.2.1 Design Requirements
The design requirements are shown in Table 6.
Table 6. Design Requirements
DESIGN PARAMETER
12
REFERENCE
EXAMPLE VALUE
Motor voltage
VM
5V
Motor RMS current
IRMS
0.3 A
Motor startup current
ISTART
0.6 A
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8.2.2 Detailed Design Procedure
The following design procedure can be used to configure the DRV8839 in a brushed motor application.
8.2.2.1 Motor Voltage
The appropriate motor voltage depends on the ratings of the motor selected and the desired RPM. A higher
voltage spins a brushed DC motor faster with the same PWM duty cycle applied to the power FETs. A higher
voltage also increases the rate of current change through the inductive motor windings.
8.2.2.2 Low-Power Operation
When entering sleep mode, TI recommends setting all inputs as a logic low to minimize system power.
8.2.2.3 Application Curves
The following scope captures show a typical motor startup and running. Channel 1 is VM, Channel 2 is IN1,
Channel 3 is IN2, and Channel 4 is motor current. the motor used is a NMB Technologies, PPN7PA12C1.
Figure 10. Motor Startup With VCC = 3.3 V, VM = 5 V
Figure 11. Motor Running With VCC = 3.3 V, VM = 5 V
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9 Power Supply Recommendations
The input pins can drive within their recommended operating conditions with or without the VCC and VM power
supplies present. No leakage current path exists to the supply. There is a weak pulldown resistor (approximately
100 kΩ) to ground on each input pin.
VCC and VM can be applied and removed in any order. When VCC is removed, the device enters a low-power
state and draws very little current from VM. If the supply voltage is between 1.8 V and 7 V, VCC and VM can
connect together.
The VM voltage supply does not have any undervoltage lockout protection (UVLO), so as long as VCC > 1.8 V,
the internal device logic remains active. This means that the VM pin voltage may drop to 0 V, however, the load
may not be sufficiently driven at low VM voltages.
9.1 Bulk Capacitance
Having appropriate local bulk capacitance is an important factor in motor drive system design. It is generally
beneficial to have more bulk capacitance, while the disadvantages are increased cost and physical size.
The required amount of local capacitance depends on a variety of factors, including:
• The highest current required by the motor system
• The power supply’s capacitance and ability to source current
• The amount of parasitic inductance between the power supply and motor system
• The acceptable voltage ripple
• The type of motor used (brushed DC, brushless DC, stepper)
• The motor braking method
Power Supply
Parasitic Wire
Inductance
Motor Drive System
VM
+
±
+
Motor
Driver
GND
Local
Bulk Capacitor
IC Bypass
Capacitor
Figure 12. Bulk Capacitance
14
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10 Layout
10.1 Layout Guidelines
The VCC pin should be bypassed to GND using low-ESR ceramic bypass capacitors with a recommended value
of 0.1-μF rated for VCC. This capacitor should be placed as close to the VCC pin as possible with a thick trace.
The VM pin should be bypassed to GND using low-ESR ceramic bypass capacitors with a recommended value
of 0.1 μF rated for VM. This capacitor should be placed as close to the VM pin as possible with a thick trace. The
VM pin must bypass to ground using an appropriate bulk capacitor. This component can be an electrolytic and
should be located close to the DRV8839 device.
10.2 Layout Example
0.1 µF
+
0.1 µF
VM
VCC
VM
nSLEEP
OUT1
IN1
OUT2
EN1
GND
IN2
GND
EN2
Figure 13. Layout Recommendation
10.3 Thermal Considerations
The DRV8839 has thermal shutdown (TSD) as described above. If the die temperature exceeds approximately
150°C, the device disables until the temperature drops to a safe level.
Any tendency of the device to enter thermal shutdown is an indication of either excessive power dissipation,
insufficient heatsinking, or too high an ambient temperature.
10.3.1 Power Dissipation
The power dissipation of the DRV8839 is a function of RMS motor current and the each output’s FET resistance
(RDS(ON)) as seen in Equation 1:
Power ≈ IRMS² × (High-Side RDS(ON) + Low-Side RDS(ON)
(1)
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DRV8839
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Thermal Considerations (continued)
For this example, VVM = 1.8 V, VVCC = 1.8 V, the ambient temperature is 35°C, and the junction temperature
reaches 65°C. At 65°C, the sum of RDS(ON) is about 1 Ω. With an example motor current of 0.8 A, the dissipated
power in the form of heat will be 0.8 A² × 1 Ω = 0.64 W.
The temperature that the DRV8839 reaches will depend on the thermal resistance to the air and PCB. It is
important to solder the device thermal pad to the PCB ground plane, with vias to the top and bottom board
layers, in order dissipate heat into the PCB and reduce the device temperature. In the example used here, the
DRV8839 had an effective thermal resistance RθJA of 47°C/W, and as shown in Equation 2:
TJ = TA + (PD × RθJA) = 35°C + (0.64 W × 47°C/W) = 65°C
16
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(2)
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DRV8839
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
• AN-1187 Leadless Leadframe Package (LLP) (SNOA401)
• DRV8839 Evaluation Module (SLVU879)
• QFN/SON PCB Attachment (SLUA271)
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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11-Aug-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
DRV8839DSSR
ACTIVE
WSON
DSS
12
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
8839
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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