DS90LV027MX/NOPB

DS90LV027 www.ti.com SNLS003C – JUNE 1998 – REVISED APRIL 2013 DS90LV027 LVDS Dual High Speed Differential Driver Check for Samples: DS90LV027 FEATURES DESCRIPTION • • • • • • • • The DS90LV027 is a dual LVDS driver device optimized for high data rate and low power applications. The DS90LV027 is a current mode driver allowing power dissipation to remain low even at high frequency. In addition, the short circuit fault current is also minimized. The device is in a 8-lead SOIC package. The DS90LV027 has a flow-through design for easy PCB layout. The differential driver outputs provides low EMI with its low output swings typically 340 mV. Perfect for high speed transfer of clock and data. Pair with any of TI's LVDS receivers. 1 23 Ultra Low Power Dissipation Operating Range above 155 Mbps Flow-through pinout simplifies PCB layout Conforms to TIA/EIA-644 Standard 8-Lead SOIC Package Saves Space VCM ±1V center around 1.2V Low Differential Output Swing Typical 340 mV Power Off Protection (outputs in high impedance) Connection Diagram Figure 1. Dual-In-Line See Package Number D (R-PDSO-G8) Functional Diagram Truth Table (1) Input/Output (1) DI DO+ DO− L L H H H L DI > 0.8V and DI < 2.0V X X H = Logic high level L = Logic low level X = indeterminant 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. TRI-STATE is a registered trademark of Texas Instruments. All other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1998–2013, Texas Instruments Incorporated DS90LV027 SNLS003C – JUNE 1998 – REVISED APRIL 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) −0.3V to +6V Supply Voltage (VCC) −0.3V to (VCC + 0.3V) Input Voltage (DI) −0.3V to +3.9V Output Voltage (DO±) Maximum Package Power Dissipation @ +25°C D Package 1190 mW Derate D Package 9.5 mW/°C above +25°C −65°C to +150°C Storage Temperature Range Lead Temperature Range Soldering (4 sec.) ESD Rating +260°C (2) ≥ 4.5 kV (HBM 1.5 kΩ, 100 pF) (1) (2) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that the devices should be operated at these limits. Electrical Characteristics specifies conditions of device operation. ESD Rating: HBM (1.5 kΩ, 100 pF) ≥ 4.5 kV Recommended Operating Conditions Supply Voltage (VCC) Temperature (TA) Min Typ Max 3.0 3.3 3.6 Units V 0 25 70 °C Electrical Characteristics Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. Symbol Parameter Conditions (1) (2) (3) Pin Min Typ Max Units DO+, DO− 250 340 450 mV 10 35 mV 1.43 1.6 V DIFFERENTIAL DRIVER CHARACTERISTICS VOD Output Differential Voltage RL = 100Ω (Figure 2) ΔVOD VOD Magnitude Change VOH Output High Voltage VOL Output Low Voltage 0.9 1.09 VOS Offset Voltage 0.9 1.25 1.6 V ΔVOS Offset Magnitude Change 0 5 25 mV IOZD TRI-STATE® Leakage VOUT = VCC or GND 0 ±1 ±10 μA IOXD Power-off Leakage VOUT = 3.6V or GND, VCC = 0V 0 ±1 ±10 μA IOSD Output Short Circuit Current VIH Input High Voltage VIL Input Low Voltage IIH Input High Current VIN = 3.6V or 2.4V IIL Input Low Current VIN = GND or 0.5V VCL Input Clamp Voltage ICL = −18 mA ICC Power Supply Current No Load −4 DI VIN = VCC or GND (2) (3) 2 VCC V −6 mA 2.0 VCC V GND 0.8 V ±1 ±10 μA ±1 ±10 μA −1.5 RL = 100Ω (1) 0 −0.8 V 1 4 mA 8 11 mA Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD. All typicals are given for: VCC = +3.3V and TA = +25°C. The DS90LV027 is a current mode device and only function with datasheet specification when a resistive load is applied to the drivers outputs. Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS90LV027 DS90LV027 www.ti.com SNLS003C – JUNE 1998 – REVISED APRIL 2013 Switching Characteristics Over Supply Voltage and Operating Temperature Ranges, unless otherwise specified. Symbol Parameter (1) (2) Conditions Min Typ Max Units 1.5 3.4 6 ns 1.5 3.5 6 ns DIFFERENTIAL DRIVER CHARACTERISTICS tPHLD Differential Propagation Delay High to Low tPLHD Differential Propagation Delay Low to High tSKD Differential Skew |tPHLD − tPLHD| 0 0.1 1.9 ns tTLH Transition Low to High Time 0 1 3 ns tTHL Transition High to Low Time 0 1 3 ns (1) (2) RL = 100Ω, CL = 5 pF (Figure 3 and Figure 4) CL includes probe and fixture capacitance. Generator waveform for all tests unless otherwise specified: f = 1 MHz, ZO = 50Ω, tr ≤ 6 ns, tf ≤ 6 ns (10%-90%). PARAMETER MEASUREMENT INFORMATION Figure 2. Differential Driver DC Test Circuit Figure 3. Differential Driver Propagation Delay and Transition Time Test Circuit Figure 4. Differential Driver Propagation Delay and Transition Time Waveforms Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS90LV027 3 DS90LV027 SNLS003C – JUNE 1998 – REVISED APRIL 2013 www.ti.com APPLICATION INFORMATION Table 1. Device Pin Descriptions Pin # Name 2, 3 DI 6, 7 DO+ Non-inverting driver output pin 5, 8 DO− Inverting driver output pin 4 GND Ground pin 1 4 VCC Description TTL/CMOS driver input pins Positive power supply pin, +3.3V ± 0.3V Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS90LV027 DS90LV027 www.ti.com SNLS003C – JUNE 1998 – REVISED APRIL 2013 REVISION HISTORY Changes from Revision B (April 2013) to Revision C • Page Changed layout of National Data Sheet to TI format ............................................................................................................ 4 Submit Documentation Feedback Copyright © 1998–2013, Texas Instruments Incorporated Product Folder Links: DS90LV027 5 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) DS90LV027M/NOPB ACTIVE SOIC D 8 95 RoHS & Green SN Level-1-260C-UNLIM 0 to 70 90LV 027M DS90LV027MX/NOPB ACTIVE SOIC D 8 2500 RoHS & Green SN Level-1-260C-UNLIM 0 to 70 90LV 027M (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of