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INA128-HT, INA129-HT
SBOS501F – JANUARY 2010 – REVISED FEBRUARY 2015
INA12x-HT Precision, Low-Power Instrumentation Amplifiers
1 Features
3 Description
•
•
•
•
•
•
2 Applications
The INA128-HT and INA129-HT are low-power,
general-purpose instrumentation amplifiers offering
excellent accuracy. The versatile three-operationalamplifier design and small size make them ideal for a
wide range of applications. Current-feedback input
circuitry provides wide bandwidth even at high gain. A
single external resistor sets any gain from 1 to 10000.
The INA128-HT provides an industry-standard gain
equation; the INA129-HT gain equation is compatible
with the AD620.
•
•
•
•
•
•
The INA128-HT and INA129-HT are laser trimmed for
very low offset voltage (25 μV Typ) and high
common-mode rejection (93 dB at G ≥ 100). These
devices operate with power supplies as low as ±2.25
V, and quiescent current of 2 mA, typically. Internal
input protection can withstand up to ±40 V without
damage.
1
Low Offset Voltage: 25 uV Typical
Low Input Bias Current: 50 nA Typical (1)
High CMR: 95 dB Typical(1)
Inputs Protected to ±40 V
Wide Supply Range: ±2.25 V to ±18 V
Low Quiescent Current: 2 mA Typical(1)
Bridge Amplifiers
Thermocouple Amplifiers
RTD Sensor Amplifiers
Medical Instrumentation
Data Acquisition
Supports Extreme Temperature Applications:
– Controlled Baseline
– One Assembly/Test Site
– One Fabrication Site
– Available in Extreme Temperature Ranges
(–55°C to 210°C) (2)
– Extended Product Life Cycle
– Extended Product-Change Notification
– Product Traceability
Texas Instruments' high-temperature products use
highly optimized silicon (die) solutions with design
and process enhancements to maximize performance
over extended temperatures.
The INA129-HT is available in 8-pin ceramic DIP and
8-pin ceramic surface-mount packages, specified for
the –55°C to 210°C temperature range. The INA128HT is available in an 8-pin SOIC-8 surface-mount
package, specified for the –55°C to 175°C
temperature range.
Device Information(1)
PART NUMBER
INA128-HT
INA129-HT
(1)
(2)
PACKAGE
BODY SIZE (NOM)
SOIC (8)
4.90 mm × 3.91 mm
CFP (8)
6.90 mm × 5.65 mm
CDIP SB (8)
11.81 mm × 7.49 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical values for 210°C application.
Custom temperature ranges available.
4 Simplified Schematic
V+
INA128:
7
50 kW
RG
G=1+
INA128, INA129
2
VIN
Over-Voltage
Protection
INA129:
A1
40 kW
1
G=1+
40 kW
(1)
49.4 kW
RG
25 kW
A3
RG
8
6
VO
(1)
25 kW
+
VIN
3
Over-Voltage
Protection
5
A2
40 kW
Ref
40 kW
4
NOTE: (1) INA129: 24.7 kW
V-
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA128-HT, INA129-HT
SBOS501F – JANUARY 2010 – REVISED FEBRUARY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
8
1
1
1
1
2
3
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings ............................................................ 5
Recommended Operating Conditions....................... 5
Thermal Information: INA128-HT.............................. 5
Electrical Characteristics: INA128-HT....................... 6
Electrical Characteristics: INA129-HT....................... 8
Typical Characteristics ............................................ 11
Detailed Description ............................................ 14
8.1 Overview ................................................................. 14
8.2 Functional Block Diagram ....................................... 14
8.3 Feature Description................................................. 14
8.4 Device Functional Modes........................................ 15
9
Application and Implementation ........................ 16
9.1 Application Information............................................ 16
9.2 Typical Application .................................................. 16
10 Power Supply Recommendations ..................... 20
10.1 Low Voltage Operation ......................................... 20
11 Layout................................................................... 22
11.1 Layout Guidelines ................................................. 22
11.2 Layout Example .................................................... 22
12 Device and Documentation Support ................. 23
12.1
12.2
12.3
12.4
12.5
Device Support......................................................
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
23
23
23
23
23
13 Mechanical, Packaging, and Orderable
Information ........................................................... 23
5 Revision History
Changes from Revision E (July 2013) to Revision F
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
•
Deleted Ordering Information table; for all available packages, see the package option addendum ................................... 3
2
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SBOS501F – JANUARY 2010 – REVISED FEBRUARY 2015
6 Pin Configuration and Functions
D, HKJ, or JDJ Package
8-Pin SOIC, CFP, or CDIP SB
Top View
HKQ Package
8-Pin CFP
Top View
RG
1
8
RG
V- IN
2
7
V+
V+IN
3
6
VO
V-
4
5
Ref
1
8
RG
RG
V+
V- IN
VO
V+IN
Ref
V-
5
4
HKQ as formed or HKJ mounted dead bug
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
Ref
5
I
Output voltage reference
RG
1, 8
O
Gain resistor connection
V+
7
Power
Positive power supply voltage from 2.25 V to 18 V
V–
4
Power
Negative power supply voltage from –2.25 V to –18 V
V+IN
3
I
Non-inverting input voltage
V–IN
2
I
Inverting input voltage
VO
6
O
Output voltage
Bare Die Information
DIE THICKNESS
BACKSIDE FINISH
BACKSIDE
POTENTIAL
BOND PAD
METALLIZATION COMPOSITION
15 mils
Silicon with backgrind
GND
Al-Si-Cu (0.5%)
Origin
a
c
b
d
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INA128-HT, INA129-HT
SBOS501F – JANUARY 2010 – REVISED FEBRUARY 2015
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Bond Pad Coordinates in Mils
(1)
DESCRIPTION
PAD NUMBER
a
b
c
d
NC
1
–57.4
–31.1
–53.3
–27
V-IN
2
–9.85
–31.4
–5.75
–27.3
V+IN
3
25.05
–31.4
29.15
–27.3
–30.2
V-
4
56.2
–34.3
60.3
Ref
5
53.75
–17.6
57.85
–11
VO
6
50.35
27.8
56.95
31.9
V+
7
7.75
30.2
11.85
34.3
32.5
NC
8
–57.4
28.4
–53.3
RG (1)
9
–57.4
13.4
–53.3
20
RG (1)
10
–57.5
2.7
–53.4
9.3
RG (1)
11
–57.5
–7.9
–53.4
–1.3
RG (1)
12
–57.4
–18.6
–53.3
–12
Pads 9 and 10 must both be bonded to a common point and correspond to package pin 8. Pads 11 and 12 must both be bonded to a
common point and correspond to package pin 1.
NC
RG
RG
RG
RG
NC
PAD #1
V-IN
V+
V+IN
VO
V-
4
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SBOS501F – JANUARY 2010 – REVISED FEBRUARY 2015
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
Volttage
Current
Storage temperature, Tstg
(1)
±18
Analog input
±40
Output short-circuit (to ground)
Operating temperature
MAX
Supply
UNIT
V
Continuous
HKJ, HKQ, KGD and JD packages
–55
210
D package
–55
175
HKJ, HKQ, KGD and JD packages
–55
210
D package
–55
175
°C
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
UNIT
A. INA218-HT (D, HKJ, or JDJ Package)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
V(ESD)
Electrostatic discharge
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
V
±50
B. INA129-HT (HKQ Package)
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±4000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±200
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
V power supply
Input common-mode voltage range for VO = 0
MIN
NOM
±2.25
±15
MAX
UNIT
±18
V
V-2V
V + –2 V
TA operating temperature INA128-HT
–55
175
°C
TA operating temperature INA129-HT
–55
210
°C
7.4 Thermal Information: INA128-HT
INA128-HT
THERMAL METRIC
(1)
D [SOIC]
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
110
RθJC(top)
Junction-to-case (top) thermal resistance
57
RθJB
Junction-to-board thermal resistance
54
ψJT
Junction-to-top characterization parameter
11
ψJB
Junction-to-board characterization parameter
53
(1)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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SBOS501F – JANUARY 2010 – REVISED FEBRUARY 2015
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7.5 Electrical Characteristics: INA128-HT
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
TA = 175°C (1)
TA = –55°C to +125°C
MIN
MIN
TYP
MAX
UNIT
TYP
MAX
±25
±100/G
±125
±1000/G
±0.2
±5/G
±1
±20/G
±3.5
±80/G
µV/°C
±2
±200/G
±5
±500/G
µV/V
INPUT
OFFSET VOLTAGE, RTI
Initial
TA = 25°C
vs temperature
TA = TMIN to TMAX
vs power supply
VS = ±2.25 V to
±18 V
Long-term stability
±1 ±3/G
10
Impedance, differential
10
±1 ±3/G
10
|| 2
VO = 0 V
(V+) − 2
(V+) − 1.4
(V−) + 2
(V−) + 1.7
Safe input voltage
µV/mo
|| 2
Ω || pF
1011||9
Ω || pF
10
1011||9
Common mode
Common mode voltage
range (2)
µV
(V+) − 2
(V+) − 1.4
(V−) + 2
(V−) + 1.7
±40
V
V
±40
V
VCM = ±13 V,
ΔRS = 1 kΩ
Common-mode rejection
G=1
58
86
58
G = 10
78
106
78
75
85
G = 100
99
125
99
110
G = 1000
113
130
113
120
dB
CURRENT
Bias current
±2
vs temperature
±10
±45
±30
Offset
Current
±1
vs temperature
±550
±10
nA
pA/°C
±45
nA
±30
±550
pA/°C
f = 10 Hz
10
10
nV/√Hz
f = 100 Hz
8
8
nV/√Hz
f = 1 kHz
8
8
nV/√Hz
0.2
0.8
NOISE
Noise voltage, RTI
G = 1000,
RS = 0 Ω
fB = 0.1 Hz to 10 Hz
µVPP
Noise current
(1)
(2)
6
f = 10 Hz
0.9
pA/√Hz
f = 1 kHz
0.3
pA/√Hz
fB = 0.1 Hz to 10 Hz
30
pAPP
Minimum and maximum parameters are characterized for operation at TA = 175°C, but may not be production tested at that
temperature. Production test limits with statistical guardbands are used to ensure high temperature performance.
Input common-mode range varies with output voltage — see typical curves.
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SBOS501F – JANUARY 2010 – REVISED FEBRUARY 2015
Electrical Characteristics: INA128-HT (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TA = 175°C (1)
TA = –55°C to +125°C
TEST
CONDITIONS
MIN
TYP
MAX
MIN
TYP
UNIT
MAX
GAIN
1+
(50 kΩ/RG)
Gain equation
Range of gain
1
Gain error
Gain vs temperature
(3)
10000
1
V/V
10000
G=1
±0.01
±0.1
±0.1%
G = 10
±0.02
±0.5
±0.5%
±1%
G = 100
±0.05
±0.7
±0.7%
±1.5%
G = 1000
±0.5
±2.5
±2%
±4%
G=1
V/V
±0.5%
±1
±10
±75
ppm/°C
±25
±100
±75
ppm/°C
VO = ±13.6 V,
G=1
±0.0001
±0.001
±0.008
G = 10
±0.0003
±0.002
±0.01
G = 100
±0.0005
±0.002
±0.01
G = 1000
±0.001
50-kΩ resistance (3) (4)
Nonlinearity
1+
(50 kΩ/RG)
See
(5)
±0.6
See
% of FSR
(5)
OUTPUT
Voltage
Positive
RL = 10 kΩ
(V+) − 1.4
(V+) − 0.9
(V+) − 1.4
(V+) − 0.9
Negative
RL = 10 kΩ
(V−) + 1.4
(V−) + 0.8
(V−) + 1.4
(V−) + 0.8
Load capacitance stability
V
1000
1000
pF
+6/−15
+6/−15
mA
G=1
1300
1100
G = 10
700
700
G = 100
200
190
G = 1000
Short-circuit current
FREQUENCY RESPONSE
Bandwidth, −3 dB
Slew rate
Settling time, 0.01%
Overload recovery
20
17.5
VO = ±10 V,
G = 10
4
4
G=1
7
7
G = 10
7
7
G = 100
9
9
G = 1000
80
80
4
4
50% overdrive
kHz
V/µs
µs
µs
POWER SUPPLY
Voltage range
Current, total
±2.25
VIN = 0 V
±15
±18
±18
V
±0.7
±1
±2.25
±15
±1
mA
TEMPERATURE RANGE
Specification
−55
+125
175
°C
Operating
−55
+125
175
°C
(3)
(4)
(5)
Specified by wafer test.
Temperature coefficient of the 50-kΩ term in the gain equation.
Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.
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INA128-HT, INA129-HT
SBOS501F – JANUARY 2010 – REVISED FEBRUARY 2015
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7.6 Electrical Characteristics: INA129-HT
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
TA = 210°C (1)
TA = –55°C to +125°C
MIN
MIN
TYP
MAX
UNIT
TYP
MAX
±25
±100/G
±125
±1000/G
±0.2
±5/G
±1
±20/G
±1
±850/G
µV/°C
±0.2
±20/G
±2
±200/G
±20
±1000/G
µV/V
INPUT
OFFSET VOLTAGE, RTI
Initial
TA = 25°C
vs temperature
TA = TMIN to TMAX
vs power supply
VS = ±2.25 V to
±18 V
Long-term stability
±1 ±3/G
10
Impedance, differential
10
±1 ±3/G
10
|| 2
VO = 0 V
(V+) − 2
(V+) − 1.4
(V−) + 2
(V−) + 1.7
Safe input voltage
µV/mo
|| 2
Ω || pF
1011||9
Ω || pF
10
1011||9
Common mode
Common mode voltage
range (2)
µV
(V+) − 2
(V+) − 1.4
(V−) + 2
(V−) + 1.7
±40
V
V
±40
V
VCM = ±13 V,
ΔRS = 1 kΩ
Common-mode rejection
G=1
58
86
53
G = 10
78
106
69
G = 100
99
125
89
G = 1000
113
130
95
dB
CURRENT
Bias current
±2
vs temperature
±10
±30
Offset Current
±1
nA
pA/°C
±50
nA
±30
±600
pA/°C
f = 10 Hz
10
25
nV/√Hz
f = 100 Hz
8
20
nV/√Hz
f = 1 kHz
8
20
nV/√Hz
0.2
2
µVPP
vs temperature
±10
±50
±600
NOISE
Noise voltage, RTI
G = 1000,
RS = 0 Ω
fB = 0.1 Hz to 10 Hz
Noise current
(1)
(2)
8
f = 10 Hz
0.9
pA/√Hz
f = 1 kHz
0.3
pA/√Hz
fB = 0.1 Hz to 10 Hz
30
pAPP
Minimum and maximum parameters are characterized for operation at TA = 210°C, but may not be production tested at that
temperature. Production test limits with statistical guardbands are used to ensure high temperature performance.
Input common-mode range varies with output voltage — see typical curves.
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SBOS501F – JANUARY 2010 – REVISED FEBRUARY 2015
Electrical Characteristics: INA129-HT (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TA = 210°C (1)
TA = –55°C to +125°C
TEST
CONDITIONS
MIN
TYP
MAX
MIN
TYP
UNIT
MAX
GAIN
1+
(49.4 kΩ/RG)
Gain equation
Range of gain
1
Gain error
Gain vs temperature
(3)
10000
1
±0.01%
±0.1%
G = 10
±0.02%
±0.5%
±2.6%
G = 100
±0.05%
±0.7%
±13.5%
G = 1000
±0.5%
±2.5%
±65.5%
G=1
V/V
10000
G=1
V/V
±1.1%
±1
±10
±100
ppm/°C
±25
±100
±100
ppm/°C
VO = ±13.6 V,
G=1
±0.0001
±0.001
±0.1
G = 10
±0.0003
±0.002
±0.2
G = 100
±0.0005
±0.002
±0.7
G = 1000
±0.001
(5)
±2.4
49.4-kΩ resistance (3) (4)
Nonlinearity
1+
(49.4 kΩ/RG)
See
% of FSR
See
(5)
OUTPUT
Voltage
Positive
RL = 10kΩ
(V+) − 1.4
(V+) − 0.9
(V+) − 1.4
(V+) − 0.9
Negative
RL = 10kΩ
(V−) + 1.4
(V−) + 0.8
(V−) + 1.4
(V−) + 0.8
Load capacitance stability
V
1000
1000
pF
+6/−15
+12/−5
mA
G=1
1300
850
G = 10
700
400
G = 100
200
50
G = 1000
Short-curcuit current
FREQUENCY RESPONSE
Bandwidth, −3 dB
Slew rate
Settling time, 0.01%
Overload recovery
20
7.5
VO = ±10 V,
G = 10
4
4
G=1
7
10
G = 10
7
10
G = 100
9
30
G = 1000
80
150
4
4
50% overdrive
kHz
V/µs
µs
µs
POWER SUPPLY
Voltage range
Current, total
±2.25
VIN = 0 V
±15
±18
±0.7
±1
±2.25
±15
±18
±2
V
mA
TEMPERATURE RANGE
Specification
−55
+125
210
°C
Operating
−55
+125
210
°C
(3)
(4)
(5)
Specified by wafer test.
Temperature coefficient of the 49.4-kΩ term in the gain equation.
Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.
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Estimated Life (Hours)
1000000
100000
Electromigration Fail Mode
10000
Wirebond Failure Mode
1000
110
120
130
140
150
160
170
180
190
200
210
Continuous TJ (°C)
(1)
See the data sheet for absolute maximum and minimum recommended operating conditions.
(2)
The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the
dominant failure mechanism affecting device wearout for the specific device process and design characterisitics.
(3)
Wirebond lifetime is only applicable for D package.
Figure 1. INA128HD, INA129SKGD1, and INA129SKGD2 Operating Life Derating Chart
10
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7.7 Typical Characteristics
At TA = 25°C, VS = ±15 V, unless otherwise noted.
60
140
G =1000V/V
G =100V/V
G = 1000V/V
Common-Mode Rejection (dB)
50
40
Gain (dB)
G = 100V/V
30
20
G = 10 V/V
10
0
G = 1V/V
− 10
120
G =10V/V
100
G =1V/V
80
60
40
20
− 20
0
10k
1k
100k
10M
1M
10
100
10k
1k
Frequency (Hz)
100k
1M
Frequency (Hz)
Figure 2. Gain vs Frequency
Figure 3. Common-Mode Rejection vs Frequency
140
140
Power Supply Rejection (dB)
Power Supply Rejection (dB)
G = 1000V/V
120
G =1000V/V
100
G =100V/V
80
60
G= 10V/V
40
G=1V/V
20
120
80
60
100
10k
1k
100k
G=1V/V
20
0
10
1M
Frequency (Hz)
Frequency (Hz)
Figure 4. Positive Power-Supply Rejection vs Frequency
Figure 5. Negative Power-Supply Rejection vs Frequency
5
15
G ≥ 10
G ≥ 10
G=1
G=1
5
+15V
VD/2
0
VD/2
5
+
VO
Ref
+
VCM
-15V
10
3
2
G ≥ 10
G ≥ 10
4
10
Common-Mode Voltage (V)
Common-Mode Voltage (V)
G=10V/V
40
0
10
G =100V/V
100
G=1
G=1
G ≥ 10
1
0
G=1
1
2
3
VS = ±5V
VS = ±2.5V
4
5
15
-15
-10
-5
0
10
5
15
-5
-4
-3
-2
-1
0
1
2
3
4
5
Output Voltage (V)
Output Voltage (V)
VS = ±5 V, ±2.5 V
VS = ±15 V
Figure 6. Input Common-Mode Range vs Output Voltage
Figure 7. Input Common-Mode Range vs Output Voltage
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Typical Characteristics (continued)
At TA = 25°C, VS = ±15 V, unless otherwise noted.
100
100
¾
Input Bias Current Noise (pA/√Hz)
¾
Input-Referred Voltage Noise (nV/√Hz)
1k
100
10
G =10V/V
10
1
G =100, 1000V/V
Current Noise
1
0.01%
Settling Time (ms)
G = 1V / V
0.1%
10
1
0.1
1
10
100
10
1
10k
1k
Figure 8. Input-Referred Noise vs Frequency
5
4
4
3.5
3
3
1.5
2.5
2
1
1.5
IQ
0
-55
-25
0
25
50
75
100
125
155
190
Input Current (mA)
Slew Rate
0.5
Flat region represents
normal linear operation.
2
G = 1V / V
0
1
+15V
G=1V/V
2
1
3
0.5
4
0
5
VIN
G = 1000V/V
-50
210
G = 1000V/V
1
-40
-30
-20
-10
0
IIN 15V
10
20
30
40
50
Input Voltage (V)
Temperature (°C)
Figure 10. Quiescent Current and Slew Rate vs Temperature
Figure 11. Input Overvoltage Voltage-to-Current
Characteristics
10
33
8
28
6
Input Bias Current (nA)
Offset Voltage Change (mV)
1000
Figure 9. Settling Time vs Gain
4.5
Slew Rate (V/µS)
Quiescent Current (mA)
2.5
2
100
Gain (V/V)
Frequency (Hz)
4
2
0
-2
-4
-6
23
18
13
IB
8
3
-8
I OS
-10
-2
0
12
100
200
300
400
500
-50
-25
0
25
50
75
100
125
150
190
Time (ms)
Temperature (°C)
Figure 12. Input Offset Voltage Warm-Up
Figure 13. Input Bias Current vs Temperature
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Typical Characteristics (continued)
(V+)
(V+)
(V+)-0.4
(V+)-0.4
Output Voltage Swing (V)
Output Voltage (V)
At TA = 25°C, VS = ±15 V, unless otherwise noted.
(V+)-0.8
(V+)-1.2
(V-)+1.2
(V-)+0.8
+25°C
(V+)-0.8
(V+)-1.2
-40 °C
RL = 10 k Ω
+25°C
(V-)+1.2
-40 °C
+85°C
(V-)+0.8
+85°C
-40 °C
(V-)+0.4
(V-)+0.4
(V-)
(V-)
0
1
2
3
0
4
5
10
15
20
Power Supply Voltage (V)
Output Current (mA)
Figure 14. Output Voltage Swing vs Output Current
Figure 15. Output Voltage Swing vs Power Supply Voltage
30
18
G =10, 100
-I SC
Peak-to-Peak Output Voltage (VPP)
16
Short-Circuit Current (mA)
+85°C
14
12
10
8
6
+I SC
4
2
25
G=1
G = 1000
20
15
10
5
0
0
-50
-25
0
25
50
75
100
125
190
10k
1k
210
100k
1M
Frequency (Hz)
Temperature (°C)
Figure 17. Maximum Output Voltage vs Frequency
Figure 16. Short-Circuit Output Current vs Temperature
1
TH D + N (% )
VO = 1 Vrms
500kHz Measurement
Bandwidth
0.1
G=1
RL = 10kW
G =100, RL = 100kW
0.01
G =10V/V
RL = 100kW
G =1, RL = 100kW
Dashed Portion
is noise limited.
0.001
100
1k
10k
100k
Frequency (Hz)
Figure 18. Total Harmonic Distortion + Noise vs Frequency
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8 Detailed Description
8.1 Overview
The INA12x instrumentation amplifier is a type of differential amplifier that has been outfitted with input protection
circuit and input buffer amplifiers, which eliminate the need for input impedance matching and make the amplifier
particularly suitable for use in measurement and test equipment. Additional characteristics of the INA12x include
a very low DC offset, low drift, low noise, very high open-loop gain, very high common-mode rejection ratio, and
very high input impedances. The INA12x is used where great accuracy and stability of the circuit both short and
long term are required.
8.2 Functional Block Diagram
V+
INA128:
7
50 kW
RG
G=1+
INA128, INA129
2
-
VIN
Over-Voltage
Protection
INA129:
A1
40 kW
1
G=1+
40 kW
(1)
49.4 kW
RG
25 kW
6
A3
RG
8
VO
(1)
25 kW
+
VIN
3
5
A2
Over-Voltage
Protection
40 kW
Ref
40 kW
4
NOTE: (1) INA129: 24.7 kW
V-
8.3 Feature Description
The INA128-HT and INA129-HT are low power, general-purpose instrumentation amplifiers offering excellent
accuracy. The versatile three-operational-amplifier design and small size make the amplifiers ideal for a wide
range of applications. Current-feedback input circuitry provides wide bandwidth, even at high gain. A single
external resistor sets any gain from 1 to 10,000. The INA128-HT and INA129-HT are laser trimmed for very low
offset voltage (25 μV typical) and high common-mode rejection (93 dB at G ≥ 100). These devices operate with
power supplies as low as ±2.25 V, and quiescent current of 2 mA, typically. The internal input protection can
withstand up to ±40 V without damage.
14
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8.4 Device Functional Modes
8.4.1 Noise Performance
The INA128-HT and INA129-HT provide very low noise in most applications. Low-frequency noise is
approximately 2 μVPP measured from 0.1 Hz to 10 Hz (G ≥ 100). This provides dramatically improved noise
when compared to state-of-the-art, chopper-stabilized amplifiers.
0.1mV/div
1s/div
G ≥ 100
Figure 19. 0.1-Hz to 10-Hz Input-Referred Voltage Noise
8.4.2 Input Common-Mode Range
The linear input voltage ranges of the input circuitry of the INA128-HT and INA129-HT are from approximately
1.4 V below the positive supply voltage to 1.7 V above the negative supply. As a differential input voltage causes
the output voltage increase, however, the linear input range will be limited by the output voltage swing of
amplifiers A1 and A2. So the linear common-mode input range is related to the output voltage of the complete
amplifier. This behavior also depends on supply voltage (see Figure 6 and Figure 7).
Input-overload can produce an output voltage that appears normal. For example, if an input overload condition
drives both input amplifiers to their positive output swing limit, the difference voltage measured by the output
amplifier will be near zero. The output of A3 will be near 0 V even though both inputs are overloaded.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The INA12x measures small differential voltage with high common-mode voltage developed between the noninverting and inverting input. The high-input voltage protection circuit in conjunction with high input impedance
make the INA12x suitable for a wide range of applications. The ability to set the reference pin to adjust the
functionality of the output signal offers additional flexibility that is practical for multiple configurations.
9.2 Typical Application
Figure 20 shows the basic connections required for operation of the INA128-HT and INA129-HT. Applications
with noisy or high impedance power supplies may require decoupling capacitors close to the device pins as
shown.
The output is referred to the output reference (Ref) pin that is normally grounded. This must be a low-impedance
connection to assure good common-mode rejection. A resistance of 8 Ω in series with the Ref pin will cause a
typical device to degrade.
V+
INA129:
INA128:
G=1+
50 kW
RG
0.1mF
G=1+
49.4 kW
RG
7
INA128, INA129
INA128
DESIRED
GAIN (V/V)
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000
INA129
RG
(W)
NEAREST
1% RG (W)
NC
50K
12.5K
5.556K
2.632K
1.02K
505.1
251.3
100.2
50.5
25.01
10
5.001
NC
49.9K
12.4K
5.62K
2.61K
1.02K
511
249
100
49.9
24.9
10
4.99
RG
(W)
NC
49.4K
12.35K
5489
2600
1008
499
248
99
49.5
24.7
9.88
4.94
VIN
NEAREST
1% RG (W)
NC
49.9K
12.4K
5.49K
2.61K
1K
499
249
100
49.9
24.9
9.76
4.87
2
Over Voltage
Protection
A1
40kW
1
6
+
8
3
VO = G · (VIN- - VIN+)
A3
RG
+
VIN
40kW
25kW (1)
25kW(1)
Load VO
A2
Over Voltage
Protection
40kW
4
NOTE: (1) INA129: 24.7kW
40kW
5
Ref
0.1mF
NC: No Connection
V IN
V
Also drawn in simplified form:
RG
+
V IN
INA1 28
VO
Ref
Figure 20. Basic Connections
9.2.1 Design Requirements
The device can be configured to monitor the input differential voltage when the gain of the input signal is set by
the external resistor RG. The output signal references to the Ref pin. The most common application is where the
output is referenced to ground when no input signal is present by connecting the Ref pin to ground, as Figure 20
shows. When the input signal increases, the output voltage at the OUT pin increases, too.
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Typical Application (continued)
9.2.2 Detailed Design Procedure
9.2.2.1 Setting the Gain
Gain is set by connecting a single external resistor, RG, between pins 1 and 8.
INA128-HT:
50 kW
G=1+ ¾
RG
(1)
INA129-HT:
49.4 kW
G=1+ ¾
RG
(2)
Commonly used gains and resistor values are shown in Figure 20.
The 50-kΩ term in Equation 1 (49.4-kΩ in Equation 2) comes from the sum of the two internal feedback resistors
of A1 and A2. These on-chip metal film resistors are laser trimmed to accurate absolute values. The accuracy
and temperature coefficient of these internal resistors are included in the gain accuracy and drift specifications of
the INA128-HT and INA129-HT.
The stability and temperature drift of the external gain setting resistor, RG, also affects gain. The RG contribution
to gain accuracy and drift can be directly inferred from Equation 2. Low resistor values required for high gain can
make wiring resistance important. Sockets add to the wiring resistance which will contribute additional gain error
(possibly an unstable gain error) in gains of approximately 100 or greater.
9.2.2.2 Dynamic Performance
Figure 2 shows that, despite its low quiescent current, the INA128-HT and INA129-HT achieve wide bandwidth,
even at high gain. This is due to the current-feedback topology of the input stage circuitry. Settling time also
remains excellent at high gain.
9.2.2.3 Offset Trimming
The INA128-HT and INA129-HT are laser trimmed for low offset voltage and offset voltage drift. Most
applications require no external offset adjustment. Figure 21 shows an optional circuit for trimming the output
offset voltage. The voltage applied to Ref terminal is summed with the output. The operational amplifier buffer
provides low impedance at the Ref terminal to preserve good common-mode rejection.
VIN
V+
RG
INA129
VO
100mA
1/2 REF200
Ref
V+
IN
OPA177
±10mV
Adjustment Range
10kW
100W
100W
100mA
1/2 REF200
V-
(1)
OPA177 and REF200 are not tested or characterized at 210°C.
Figure 21. Optional Trimming of Output Offset Voltage
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Typical Application (continued)
9.2.2.4 Input Bias Current Return Path
The input impedances of the INA128-HT and INA129-HT are extremely high (approximately 1010 Ω). However, a
path must be provided for the input bias current of both inputs. This input bias current is approximately ±50 nA.
High input impedance means that this input bias current changes very little with varying input voltage.
Input circuitry must provide a path for this input bias current for proper operation. Figure 22 shows various
provisions for an input bias current path. Without a bias current path, the inputs will float to a potential which
exceeds the common-mode range, and the input amplifiers will saturate.
If the differential source resistance is low, the bias current return path can be connected to one input (see the
thermocouple example in Figure 22). With higher source impedance, using two equal resistors provides a
balanced input with possible advantages of lower input offset voltage due to bias current and better highfrequency common-mode rejection.
Microphone,
Hydrophone
etc.
INA129
47kW
47kW
Thermocouple
INA129
10kW
INA129
Center-tap provides
bias current return.
Figure 22. Providing an Input Common-Mode Current Path
18
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Typical Application (continued)
9.2.3 Application Curves
G=1
G = 10 0
20mV/div
20mV/div
G = 10
G = 10 0 0
20ms/div
5ms/div
G = 100, 1000
G = 1, 10
Figure 24. Small Signal
Figure 23. Small Signal
G=1
G =100
5V/div
5V/div
G = 10
G =1000
5ms/div
20ms/div
G = 1, 10
G = 100, 1000
Figure 25. Large Signal
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Figure 26. Large Signal
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10 Power Supply Recommendations
The minimum power supply voltage for INA12x is ±2.25 V and the maximum power supply voltage is ±18 V. This
minimum and maximum range covers a wide range of power supplies; but for optimum performance, ±15 V is
recommended. TI recommends adding a bypass capacitor at the input to compensate for the layout and power
supply source impedance.
10.1 Low Voltage Operation
The INA128-HT and INA129-HT can be operated on power supplies as low as ±2.25 V. Performance remains
excellent with power supplies ranging from ±2.25 V to ±18 V. Most parameters vary only slightly throughout this
supply voltage range.
Operation at very low supply voltage requires careful attention to assure that the input voltages remain within
their linear range. Voltage swing requirements of internal nodes limit the input common-mode range with low
power supply voltage. Figure 6 and Figure 7 show the range of linear operation for ±15 V, ±5 V, and ±2.5 V
supplies.
(1)
OPA130 is not tested or characterized at 210°C.
+5V
2.5V - ∆V
300W
VIN
+
RG
VO
RG
INA129
Ref
VO
INA129
C1
0.1mF
Ref
R1
1MW
2.5V + ∆V
OPA130
1
f-3dB=
2pR1C1
= 1.59 Hz
Figure 27. Bridge Amplifier
Figure 28. AC-Coupled Instrumentation Amplifier
V+
10.0V
6
REF102
R1
2
R2
4
Pt100
Cu
K
VO
Cu
RG
INA129
Ref
R3
100Ω = Pt100 at 0°C
ISA
TYPE
E
J
K
T
(1)
MATERIAL
+Chromel
-Constantan
+Iron
-Constantan
+Chromel
-Alumel
+Copper
-Constantan
SEEBECK
COEFFICIENT
(mV/°C)
R1, R2
58.5
66.5kW
50.2
76.8kW
39.4
97.6kW
38
102kW
REF102 is not tested or characterized at 210°C.
Figure 29. Thermocouple Amplifier With RTD Cold-Junction Compensation
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Low Voltage Operation (continued)
-
IO =
R1
VIN
RG
INA129
V IN
· G
R1
+
Ref
IB
A1
(1)
A1
IB ERROR
OPA177
±1.5 nA
OPA131
±50 pA
OPA602
±1 pA
OPA128
±75 fA
IO
Load
OPA177, OPA131, OPA602, and OPA128 are not tested or characterized at 210°C.
Figure 30. Differential Voltage-to-Current Converter
RG = 5.6kW
2.8kW
G = 10
LA
RA
RG/2
INA129
VO
Ref
2.8kW
390kW
1/2
OPA2131
RL
VG
10kW
390kW
(1)
VG
1/2
OPA2131
NOTE: Due to the INA129’s current-feedback
topology, VG is approximately 0.7 V less than
the common-mode input voltage. This DC offset
in this guard potential is satisfactory for many
guarding applications.
OPA2131 is not tested or characterized at 210°C.
Figure 31. ECG Amplifier With Right-Leg Drive
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11 Layout
11.1 Layout Guidelines
Place the power-supply bypass capacitor as closely as possible to the supply and ground pins. The
recommended value of this bypass capacitor is 0.1 μF to 1 μF. If necessary, additional decoupling capacitance
can be added to compensate for noisy or high-impedance power supplies. These decoupling capacitors must be
placed between the power supply and INA12x device.
The gain resistor must be placed close to pin 1 and pin 8. This placement limits the layout loop and minimizes
any noise coupling into the part.
11.2 Layout Example
Gain Resistor
Bypass
Capacitor
VIN
VIN
–
+
R6
R6
V–IH
V+
V+IH
VO
V–
REF
V+
VOUT
GND
Bypass
Capacitor
V–
GND
Figure 32. Recommended Layout
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Development Support
Table 1. Design Kits and Evaluation Modules
NAME
PART NUMBER
TYPE
DIP Adapter Evaluation Module
DIP-ADAPTER-EVM
Evaluation Modules and Boards
Universal Instrumentation Amplifier Evaluation
Module
INAEVM
Evaluation Modules and Boards
Table 2. Development Tools
NAME
PART NUMBER
TYPE
Calculate Input Common-Mode Range of
Instrumentation Amplifiers
INA-CMV-CALC
Calculation Tools
SPICE-Based Analog Simulation Program
TINA-TI
Circuit Design and Simulation
12.2 Related Links
Table 3 lists quick access links. Categories include technical documents, support and community resources,
tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
INA128-HT
Click here
Click here
Click here
Click here
Click here
INA129-HT
Click here
Click here
Click here
Click here
Click here
12.3 Trademarks
All trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
3-Jun-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
INA128HD
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-55 to 175
128HD
Samples
INA129SHKJ
ACTIVE
CFP
HKJ
8
25
RoHS & Green
Call TI
N / A for Pkg Type
-55 to 210
INA129S
HKJ
Samples
INA129SHKQ
ACTIVE
CFP
HKQ
8
25
RoHS & Green
AU
N / A for Pkg Type
-55 to 210
INA129S
HKQ
Samples
INA129SJD
ACTIVE
CDIP SB
JDJ
8
37
RoHS & Green
Call TI
N / A for Pkg Type
-55 to 210
INA129SJD
Samples
INA129SKGD1
ACTIVE
XCEPT
KGD
0
80
RoHS & Green
Call TI
N / A for Pkg Type
-55 to 210
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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