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LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
Industry-Standard Dual Operational Amplifiers
1 Features
3 Description
•
•
The LM358B and LM2904B devices are the nextgeneration versions of the industry-standard
operational amplifiers (op amps) LM358 and LM2904,
which include two high-voltage (36-V) op amps.
These devices provide outstanding value for costsensitive applications, with features including low
offset (300 µV, typical), common-mode input range to
ground, and high differential input voltage capability.
1
•
•
•
•
•
Wide supply range of 3 V to 36 V (B version)
Quiescent current: 300 µA per amplifier (B
version, typical)
Unity-gain bandwidth of 1.2 MHz (B version)
Common-mode input voltage range includes
ground, enabling direct sensing near ground
Low input offset voltage of 3 mV at 25°C (A and B
versions, maximum)
Internal RF and EMI filter (B version)
On products compliant to MIL-PRF-38535, all
parameters are tested unless otherwise noted. On
all other products, production processing does not
necessarily include testing of all parameters.
2 Applications
•
•
•
•
•
•
•
•
•
•
•
Merchant network and server power supply units
Multi-function printers
Power supplies and mobile chargers
Motor control: AC induction, brushed DC,
brushless DC, high-voltage, low-voltage,
permanent magnet, and stepper motor
Desktop PC and motherboard
Indoor and outdoor air conditioners
Washers, dryers, and refrigerators
AC inverters, string inverters, central inverters,
and voltage frequency drives
Uninterruptible power supplies
Programmable logic controllers
Electronic point-of-sale systems
Single-Pole, Low-Pass Filter
RG
RF
The LM358B and LM2904B op amps simplify circuit
design with enhanced features such as unity-gain
stability, lower offset voltage of 3 mV (maximum at
room temperature), and lower quiescent current of
300 µA per amplifier (typical). High ESD (2 kV, HBM)
and integrated EMI and RF filters enable the LM358B
and LM2904B devices to be used in the most rugged,
environmentally challenging applications.
The LM358B and LM2904B amplifiers are available in
industry standard packages, including SOIC, TSSOP,
and VSSOP.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LM358B, LM2904B,
LM358, LM358A, LM2904, SOIC (8)
LM2904V, LM258, LM258A
4.90 mm × 3.90 mm
LM358B(2), LM2904B(2),
LM358, LM358A, LM2904,
LM2490V
TSSOP (8)
3.00 mm × 4.40 mm
LM358B(2), LM2904B(2),
LM358, LM358A, LM2904, VSSOP (8)
LM2904V, LM258, LM258A
3.00 mm × 3.00 mm
LM358, LM2904
SO (8)
5.20 mm × 5.30 mm
LM358, LM2904, LM358A,
LM258, LM258A
PDIP (8)
9.81 mm × 6.35 mm
LM158, LM158A
CDIP (8)
9.60 mm × 6.67 mm
LM158, LM158A
LCCC (20)
8.89 mm × 8.89 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
(2) Package is for preview only.
R1
VOUT
VIN
C1
f-3 dB =
(
RF
VOUT
= 1+
RG
VIN
((
1
1 + sR1C1
1
2pR1C1
(
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION
DATA.
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
8
9
1
1
1
2
4
5
6
Absolute Maximum Ratings ...................................... 6
ESD Ratings.............................................................. 6
Recommended Operating Conditions....................... 7
Thermal Information .................................................. 7
Electrical Characteristics: LM358B and LM358BA ... 8
Electrical Characteristics: LM2904B and LM2904B.. 9
Electrical Characteristics: LM358, LM358A ............ 10
Electrical Characteristics: LM2904, LM2904V ........ 11
Electrical Characteristics: LM158, LM158A ............ 12
Electrical Characteristics: LM258, LM258A .......... 13
Typical Characteristics .......................................... 14
Typical Characteristics .......................................... 21
Parameter Measurement Information ................ 23
Detailed Description ............................................ 24
9.1 Overview .................................................................
9.2 Functional Block Diagram - LM358B, LM358BA,
LM2904B, LM2904BA ..............................................
9.3 Feature Description.................................................
9.4 Device Functional Modes........................................
24
24
25
25
10 Application and Implementation........................ 26
10.1 Application Information.......................................... 26
10.2 Typical Application ............................................... 26
11 Power Supply Recommendations ..................... 27
12 Layout................................................................... 27
12.1 Layout Guidelines ................................................. 27
12.2 Layout Examples................................................... 28
13 Device and Documentation Support ................. 29
13.1
13.2
13.3
13.4
13.5
13.6
13.7
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
29
29
29
29
29
29
29
14 Mechanical, Packaging, and Orderable
Information ........................................................... 30
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision V (September 2018) to Revision W
Page
•
Added specification in the Device Comparison Table ............................................................................................................ 4
•
Changed CDM ESD rating for LM358B and LM2904B in ESD Ratings ................................................................................ 6
•
Changed VS to V+ in Recommended Operating Conditions .................................................................................................. 7
•
Changed Thermal Information for the LM158FK and LM158JG devices............................................................................... 7
•
Added Typical Characteristics section for the LM358B and LM2490B op amps ................................................................. 14
•
Added test circuit for THD+N and small-signal step response, G = –1 in the Parameter Measurement Information
section .................................................................................................................................................................................. 23
•
Changed the Functional Block Diagram ............................................................................................................................... 24
•
Deleted preview designator from LM358B and LM2904B in the Related Links section ...................................................... 29
Changes from Revision U (January 2017) to Revision V
Page
•
Changed the data sheet title ................................................................................................................................................. 1
•
Changed first four items in the Features section ................................................................................................................... 1
•
Changed the first item in the Applications section and added four new items ...................................................................... 1
•
Changed voltage values in the first paragraph of the Description section ............................................................................. 1
•
Changed text in the second paragraph of the Description section......................................................................................... 1
•
Added devices LM358B and LM2904B to data sheet ............................................................................................................ 1
•
Changed the first three rows of the Device Information table and added a a cross-referenced note for PREVIEWstatus devices ......................................................................................................................................................................... 1
•
Added Device Comparison table ........................................................................................................................................... 4
•
Added a table note to the Pin Functions table ...................................................................................................................... 5
•
Changed "free-air temperature" to "ambient temperature" in the Absolute Maximum Ratings condition statement ............. 6
2
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Copyright © 1976–2019, Texas Instruments Incorporated
Product Folder Links: LM158 LM158A LM258 LM258A LM358 LM358A LM358B LM358BA LM2904 LM2904B
LM2904BA LM2904V
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LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com
SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
•
Changed all entries in the Absolute Maximum Ratings table except TJ and Tstg .................................................................. 6
•
Deleted lead temperature and case temperature from Absolute Maximum Ratings.............................................................. 6
•
Changed device listings and their voltage values in the ESD Ratings table ......................................................................... 6
•
Changed "free-air temperature" to "ambient temperature" in the Recommended Operating Conditions condition
statement ............................................................................................................................................................................... 7
•
Changed table entries for all parameters in the Recommended Operating Conditions table ................................................ 7
•
Added rows to the Thermal Information table, and a table note regarding device-package combinations .......................... 7
•
Deleted the Operating Conditions table................................................................................................................................ 13
•
Added a condition statement to the Typical Characteristics section .................................................................................... 21
•
Changed specific voltages to a Recommended Operating Conditions reference................................................................ 24
•
Changed unity-gain bandwidth from 0.7 MHz for all devices to 1.2 MHz for B-version devices.......................................... 25
•
Changed slew rate from.3 V/µs for all devices to o.5 V/µs for B-version devices................................................................ 25
•
Changed the Input Common Mode Range section in multiple places throughout ............................................................... 25
•
Changed VCC to VS in the Application Information section .................................................................................................. 26
•
Subscripted the suffixes fro RI and RF .................................................................................................................................. 26
•
Changed Operational Amplifier Board Layout for Noninverting Configuration with an image that includes a dual op amp 28
•
Added Preview designation to the LM358B and LM2904B devices in Table 1 ................................................................... 29
Changes from Revision T (April 2015) to Revision U
Page
•
Changed data sheet title......................................................................................................................................................... 1
•
Added Receiving Notification of Documentation Updates section and Community Resources section ............................. 29
Changes from Revision S (January 2014) to Revision T
•
Page
Added Applications section, ESD Ratings table, Feature Description section, Device Functional Modes, Application
and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation
Support section, and Mechanical, Packaging, and Orderable Information section ............................................................... 1
Changes from Revision R (July 2010) to Revision S
Page
•
Converted this data sheet from the QS format to DocZone using the PDF on the web ........................................................ 1
•
Deleted Ordering Information table ........................................................................................................................................ 1
•
Updated Features to include Military Disclaimer .................................................................................................................... 1
•
Added Typical Characteristics section.................................................................................................................................. 21
•
Added ESD warning ............................................................................................................................................................. 29
Copyright © 1976–2019, Texas Instruments Incorporated
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LM2904BA LM2904V
3
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
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5 Device Comparison Table
4
PART NUMBER
SUPPLY
VOLTAGE
TEMPERATURE
RANGE
VOS (MAXIMUM
AT 25°C)
IQ / CH (TYPICAL AT
25°C)
INTEGRATED EMI
FILTER
PACKAGE
LM358B
3 V–36 V
–40°C to 85°C
3 mV
300 µA
Yes
D, DGK, PW
LM2904B
3 V–36 V
–40°C to 125°C
3 mV
300 µA
Yes
D, DGK, PW
LM358
3 V–32 V
0°C to 70°C
7 mV
350 µA
No
D, PW, DGK, P, PS
LM2904
3 V–26 V
–40°C to 125°C
7 mV
350 µA
No
D, PW, DGK, P, PS
LM358A
3 V–32 V
0°C to 70°C
3 mV
350 µA
No
D, PW, DGK, P
LM2904V
3 V–32 V
–40°C to 125°C
7 mV
350 µA
No
D, PW
LM158
3 V–32 V
–55°C to 125°C
5 mV
350 µA
No
JG, FK
LM158A
3 V–32 V
–55°C to 125°C
3 mV
350 µA
No
JG, FK
LM258
3 V–32 V
–25°C to 85°C
5 mV
350 µA
No
D, DGK, P
LM258A
3 V–32 V
–25°C to 85°C
3 mV
350 µA
No
D, DGK, P
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LM2904BA LM2904V
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
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SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
6 Pin Configuration and Functions
D, DGK, P, PS, PW, and JG Packages
8-Pin SOIC, VSSOP, PDIP, SO, TSSOP, and CDIP
Top View
6
IN2±
V±
4
5
IN2+
NC
3
19
IN1+
V+
OUT2
20
7
NC
2
1
IN1±
OUT1
V+
2
8
NC
1
3
OUT1
FK Package
20-Pin LCCC
Top View
NC
4
18
NC
IN1±
5
17
OUT2
NC
6
16
NC
IN1+
7
15
IN2±
NC
8
14
NC
13
NC
12
IN2+
11
NC
10
V±
NC
9
Not to scale
Not to scale
NC - No internal connection
Pin Functions
PIN
I/O
DESCRIPTION
LCCC (1)
SOIC, SSOP, CDIP, PDIP, SO,
TSSOP, CFP (1)
IN1–
5
2
I
Negative input
IN1+
7
3
I
Positive input
IN2–
15
6
I
Negative input
IN2+
12
5
I
Positive input
OUT1
2
1
O
Output
OUT2
17
7
O
Output
V–
10
4
—
Negative (lowest) supply or ground (for singlesupply operation)
NC
1, 3, 4, 6, 8, 9, 11,
13, 14, 16, 18, 19
—
—
No internal connection
V+
20
8
—
Positive (highest) supply
NAME
(1)
For a listing of which devices are available in what packages, see Device Comparison Table.
Copyright © 1976–2019, Texas Instruments Incorporated
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5
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
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7 Specifications
7.1 Absolute Maximum Ratings
over operating ambient temperature range (unless otherwise noted) (1)
MIN
Supply voltage, VS = ([V+] – [V–])
Differential input voltage, VID (2)
Input voltage, VI
Either input
MAX
LM358B, LM358BA,
LM2904B, LM2904BA
±20 or 40
LM158, LM258, LM358,
LM158A, LM258A, LM358A,
LM2904V
±16 or 32
LM2904
±13 or 26
LM358B, LM358BA,
LM2904B, LM2904BA,LM158,
LM258, LM358, LM158A,
LM258A, LM358A, LM2904V
–32
32
LM2904
–26
26
LM358B, LM358BA,
LM2904B, LM2904BA
–0.3
40
LM158, LM258, LM358,
LM158A, LM258A, LM358A,
LM2904V
–0.3
32
LM2904
–0.3
26
Duration of output short circuit (one amplifier) to ground at (or below) TA = 25°C,
VS ≤ 15 V (3)
Operating ambient temperature, TA
Unlimited
LM158, LM158A
–55
125
LM258, LM258A
–25
85
LM358B, LM358BA
–40
85
0
70
–40
125
LM358, LM358A
LM2904B, LM2904BA,
LM2904, LM2904V
Operating virtual-junction temperature, TJ
Storage temperature, Tstg
(1)
(2)
(3)
–65
UNIT
V
V
V
s
°C
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Differential voltages are at IN+, with respect to IN−.
Short circuits from outputs to VS can cause excessive heating and eventual destruction.
7.2 ESD Ratings
VALUE
UNIT
LM358B, LM358BA, LM2904B, AND LM2904BA
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1000
V
LM158, LM258, LM358, LM158, LM258A, LM358A, LM2904, AND LM2904V
V(ESD)
(1)
(2)
6
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
Charged-device model (CDM), per JEDEC specification JESD22-C101
±500
(2)
±1000
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
VS
Supply voltage, VS= ([V+] – [V–])
VCM
Common-mode voltage
MIN
MAX
LM358B, LM358BA, LM2904B,
LM2904BA
3
36
LM158, LM258, LM358, LM158A,
LM258A, LM358A, LM2904V
3
30
LM2904
TA
Operating ambient temperature
3
26
V–
V+ – 2
LM358B, LM358BA
–40
85
LM2904B, LM2904BA, LM2904,
LM2904V
–40
125
LM358, LM358A
0
70
LM258, LM258A
–20
85
LM158, LM158A
–55
125
UNIT
V
V
°C
7.4 Thermal Information
LM258, LM258A, LM358, LM358A, LM358B, LM358BA, LM2904,
LM2904B, LM2904BA, LM2904V (2)
THERMAL METRIC (1)
LM158, LM158A
D
(SOIC)
DGK
(VSSOP)
P
(PDIP)
PS
(SO)
PW
(TSSOP)
FK
(LCCC)
JG
(CDIP)
UNIT
8 PINS
8 PINS
8 PINS
8 PINS
8 PINS
20 PINS
8 PINS
RθJA
Junction-to-ambient thermal
resistance
124.7
181.4
80.9
116.9
171.7
84.0
112.4
°C/W
RθJC(top)
Junction-to-case (top)
thermal resistance
66.9
69.4
70.4
62.5
68.8
56.9
63.6
°C/W
RθJB
Junction-to-board thermal
resistance
67.9
102.9
57.4
68.6
99.2
57.5
100.3
°C/W
ψJT
Junction-to-top
characterization parameter
19.2
11.8
40
21.9
11.5
51.7
35.7
°C/W
ψJB
Junction-to-board
characterization parameter
67.2
101.2
56.9
67.6
97.9
57.1
93.3
°C/W
RθJC(bot)
Junction-to-case (bottom)
thermal resistance
—
—
—
—
—
10.6
22.3
°C/W
(1)
(2)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
For a listing of which devices are available in what packages, see Device Comparison Table.
Copyright © 1976–2019, Texas Instruments Incorporated
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7
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SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
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7.5 Electrical Characteristics: LM358B and LM358BA
VS = (V+) – (V–) = 5 V - 36 V (±2.5 V - ±18 V), TA = 25°C, VCM = VOUT = VS/2, RL = 10k connected to VS/2
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
±0.3
±3.0
mV
±4
mV
±2.0
mV
OFFSET VOLTAGE
LM358B
VOS
TA = –40°C to +85°C
Input offset voltage
LM358BA
TA = –40°C to +85°C
dVOS/dT
Input offset voltage drift
PSRR
Power Supply Rejection Ratio
Channel separation, dc
±2.5
TA = -40°C to +85°C (1)
f = 1 kHz to 20 kHz
mV
±3.5
11
µV/°C
±2
15
µV/V
±1
µV/V
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
VS = 3 V to 36 V
VS = 5 V to 36 V
CMRR
Common-mode rejection ratio
TA = –40°C to +85°C
(V–) ≤ VCM ≤ (V+) – 1.5 V
VS = 3 V to 36 V
(V–) ≤ VCM ≤ (V+) – 2.0 V
VS = 5 V to 36 V
(V–)
(V+) – 1.5
V
(V–)
(V+) – 2
V
20
100
25
316
±10
±35
nA
±50
nA
4
nA
µV/V
TA = –40°C to +85°C
INPUT BIAS CURRENT
IB
Input bias current
TA = –40°C to +85°C (1)
0.5
IOS
Input offset current
dIOS/dT
Input offset current drift
TA = –40°C to +85°C (1)
5
TA = –40°C to +85°C
10
nA
pA/℃
NOISE
En
Input voltage noise
f = 0.1 to 10 Hz
en
Input voltage noise density
f = 1 kHz
3
µVPP
40
nV/√/Hz
10 || 0.1
MΩ|| pF
4 || 1.5
GΩ|| pF
INPUT IMPEDANCE
ZID
Differential
ZIC
Common-mode
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
VS = 15 V; VO = 1 V to 11 V; RL ≥ 10 kΩ, connected to (V-)
70
TA = –40°C to +85°C
140
V/mV
35
V/mV
FREQUENCY RESPONSE
GBW
Gain bandwidth product
1.2
MHz
SR
Slew rate
G=+1
0.5
V/µs
Θm
Phase margin
G = + 1, RL = 10kΩ, CL = 20 pF
56
°
tOR
Overload recovery time
VIN × gain > VS
10
µs
ts
Settling time
To 0.1%, VS = 5 V, 2-V Step , G = +1, CL = 100 pF
4
µs
THD+N
Total harmonic distortion + noise
G = + 1, f = 1 kHz, VO = 3.53 VRMS, VS = 36V, RL = 100k, IOUT ≤ ±50µA, BW = 80 kHz
0.001
%
OUTPUT
Positive Rail (V+)
VO
Voltage output swing from rail
Negative Rail (V-)
VS = 5 V, RL ≤ 10 kΩ connected to (V–)
IO
Output current
VS = 15 V; VO = V-;
VID = 1 V
Source (1)
VS = 15 V; VO = V+;
VID = -1 V
Sink (1)
IOUT = 50 µA
1.35
1.42
V
IOUT = 1 mA
1.4
1.48
V
IOUT = 5 mA (1)
1.5
1.61
V
IOUT = 50 µA
100
150
mV
IOUT = 1 mA
0.75
1
V
5
20
mV
TA = –40°C to +85°C
-20
TA = –40°C to +85°C
ISC
Short-circuit current
CLOAD
Capacitive load drive
RO
Open-loop output resistance
mA
10
TA = –40°C to +85°C
VID = -1 V; VO = (V-) + 200 mV
20
5
60
VS = 20 V, (V+) = 10 V, (V-) = -10 V, VO = 0 V
-30
-10
100
±40
f = 1 MHz, IO = 0 A
μA
±60
mA
100
pF
300
Ω
POWER SUPPLY
IQ
Quiescent current per amplifier
VS = 5 V; IO = 0 A
IQ
Quiescent current per amplifier
VS = 36 V; IO = 0 A
(1)
8
300
TA = –40°C to +85°C
460
µA
800
µA
Specified by characterization only
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SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
7.6 Electrical Characteristics: LM2904B and LM2904B
VS = (V+) – (V–) = 5 V - 36 V (±2.5 V - ±18 V), TA = 25°C, VCM = VOUT = VS/2, RL = 10k connected to VS/2
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
±0.3
±3.0
mV
±4
mV
±2.0
mV
OFFSET VOLTAGE
LM2904B
VOS
TA = –40°C to +125°C
Input offset voltage
LM2904BA
TA = –40°C to +125°C
dVOS/dT
Input offset voltage drift
PSRR
Power Supply Rejection Ratio
Channel separation, dc
±2.5
TA = –40°C to +125°C (1)
f = 1 kHz to 20 kHz
mV
±3.5
12
µV/°C
±2
15
µV/V
±1
µV/V
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
VS = 3 V to 36 V
VS = 5 V to 36 V
CMRR
Common-mode rejection ratio
TA = –40°C to +125°C
(V–) ≤ VCM ≤ (V+) – 1.5 V
VS = 3 V to 36 V
(V–) ≤ VCM ≤ (V+) – 2.0 V
VS = 5 V to 36 V
(V–)
(V+) – 1.5
V
(V–)
(V+) – 2
V
20
100
25
316
±10
±35
nA
±50
nA
4
nA
µV/V
TA = –40°C to +125°C
INPUT BIAS CURRENT
IB
Input bias current
TA = –40°C to +125°C (1)
0.5
IOS
Input offset current
dIOS/dT
Input offset current drift
TA = –40°C to +125°C (1)
5
TA = –40°C to +125°C
10
nA
pA/℃
NOISE
En
Input voltage noise
f = 0.1 to 10 Hz
en
Input voltage noise density
f = 1 kHz
3
µVPP
40
nV/√/Hz
10 || 0.1
MΩ|| pF
4 || 1.5
GΩ|| pF
INPUT IMPEDANCE
ZID
Differential
ZIC
Common-mode
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
VS = 15 V; VO = 1 V to 11 V; RL ≥ 10 kΩ, connected to (V-)
70
TA = –40°C to +125°C
140
V/mV
35
V/mV
FREQUENCY RESPONSE
GBW
Gain bandwidth product
1.2
MHz
SR
Slew rate
G=+1
0.5
V/µs
Θm
Phase margin
G = + 1, RL = 10kΩ, CL = 20 pF
56
°
tOR
Overload recovery time
VIN × gain > VS
10
µs
ts
Settling time
To 0.1%, VS = 5 V, 2-V Step , G = +1, CL = 100 pF
4
µs
THD+N
Total harmonic distortion + noise
G = + 1, f = 1 kHz, VO = 3.53 VRMS, VS = 36V, RL = 100k, IOUT ≤ ±50µA, BW = 80 kHz
0.001
%
OUTPUT
Positive Rail (V+)
VO
Voltage output swing from rail
Negative Rail (V-)
VS = 5 V, RL ≤ 10 kΩ connected to (V–)
IO
Output current
VS = 15 V; VO = V-; VID =
1V
Source (1)
VS = 15 V; VO = V+; VID
= -1 V
Sink (1)
IOUT = 50 µA
1.35
1.42
V
IOUT = 1 mA
1.4
1.48
V
IOUT = 5 mA (1)
1.5
1.61
V
IOUT = 50 µA
100
150
mV
IOUT = 1 mA
0.75
1
V
5
20
mV
TA = –40°C to +125°C
-20
TA = –40°C to +125°C
ISC
Short-circuit current
CLOAD
Capacitive load drive
RO
Open-loop output resistance
mA
10
TA = –40°C to +125°C
VID = -1 V; VO = (V-) + 200 mV
20
5
60
VS = 20 V, (V+) = 10 V, (V-) = -10 V, VO = 0 V
-30
-10
100
±40
f = 1 MHz, IO = 0 A
μA
±60
mA
100
pF
300
Ω
POWER SUPPLY
IQ
Quiescent current per amplifier
VS = 5 V; IO = 0 A
IQ
Quiescent current per amplifier
VS = 36 V; IO = 0 A
(1)
300
TA = –40°C to +125°C
460
µA
800
µA
Specified by characterization only
Copyright © 1976–2019, Texas Instruments Incorporated
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9
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SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
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7.7 Electrical Characteristics: LM358, LM358A
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP (2)
MAX
3
7
UNIT
OFFSET VOLTAGE
LM358
VOS
Input offset voltage
VS = 5 V to 30 V; VCM = 0 V; VO = 1.4
V
TA = 0°C to 70°C
9
mV
LM358A
2
TA = 0°C to 70°C
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power
supply (ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
3
5
LM358
TA = 0°C to 70°C
7
LM358A
TA = 0°C to 70°C
7
µV/°C
65
20
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to 30 V
LM358
VS = 30 V
LM358A
VS = 5 V to 30 V
LM358
VS = 30 V
LM358A
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = 0°C to 70°C
VS = 5 V to 30 V; VCM = 0 V
65
80
dB
INPUT BIAS CURRENT
–20
–250
LM358
IB
Input bias current
TA = 0°C to 70°C
VO = 1.4 V
–500
nA
–15
–100
LM358A
TA = 0°C to 70°C
–200
2
50
LM358
IOS
Input offset current
TA = 0°C to 70°C
VO = 1.4 V
150
nA
2
30
LM358A
TA = 0°C to 70°C
75
10
dIOS/dT
Input offset current drift
pA/°C
LM358A
TA = 0°C to 70°C
300
NOISE
en
Input voltage noise density
f = 1 kHz
40
nV/√Hz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
25
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
100
V/mV
TA = 0°C to 70°C
15
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
G = +1
0.7
MHz
0.3
V/µs
OUTPUT
VS = 30 V; RL = 2 kΩ
Positive rail
VO
Voltage output swing from rail
TA = 0°C to 70°C
4
VS = 30 V; RL ≥ 10 kΩ
2
VS = 5 V; RL ≥ 2 kΩ
Negative rail
VS = 5 V; RL ≤ 10 kΩ
TA = 0°C to 70°C
5
–20
VS = 15 V; VO = 0 V; VID
=1V
IO
Source
VS = 15 V; VO = 15 V;
VID = –1 V
Short-circuit current
20
mV
–60
–10
10
mA
20
Sink
TA = 0°C to 70°C
VID = –1 V; VO = 200 mV
ISC
V
–30
LM358A
TA = 0°C to 70°C
Output current
3
1.5
5
12
VS = 10 V; VO = VS / 2
30
±40
µA
±60
mA
POWER SUPPLY
IQ
(1)
(2)
10
Quiescent current per
amplifier
VO = 2.5 V; IO = 0 A
VS = 30 V; VO = 15 V; IO = 0 A
TA = 0°C to 70°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 30 V for LM358 and LM358A.
All typical values are TA = 25°C.
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SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
7.8 Electrical Characteristics: LM2904, LM2904V
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP
MAX
(2)
UNIT
OFFSET VOLTAGE
VOS
Input offset voltage
VS = 5 V to maximum; VCM = 0 V; VO = 1.4
V
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power
supply (ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
Non-A suffix
devices
A-suffix
devices
3
7
TA = –40°C to 125°C
10
mV
1
2
TA = –40°C to 125°C
4
TA = –40°C to 125°C
7
65
µV/°C
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to maximum
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = –40°C to 125°C
VS = 5 V to maximum; VCM = 0 V
65
80
dB
INPUT BIAS CURRENT
–20
IB
Input bias current
VO = 1.4 V
Non-V suffix
device
IOS
Input offset current
VO = 1.4 V
V-suffix
device
dIOS/dT
–250
nA
TA = –40°C to 125°C
Input offset current drift
–500
2
TA = –40°C to 125°C
50
300
nA
2
TA = –40°C to 125°C
50
150
TA = –40°C to 125°C
10
pA/°C
40
nV/√Hz
NOISE
en
Input voltage noise density
f = 1 kHz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
25
100
V/mV
TA = –40°C to 125°C
15
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
G = +1
0.7
MHz
0.3
V/µs
OUTPUT
RL ≥ 10 kΩ
Non-V suffix
device
Positive rail
VO
VS – 1.5
VS = maximum; RL =
2 kΩ
Voltage output swing from rail
VS = maximum; RL =
2 kΩ
V-suffix device
Negative rail
4
VS = maximum; RL ≥
10 kΩ
2
TA = –40°C to 125°C
–20
VS = 15 V; VO = 0 V; VID = 1 V
Source
VS = 15 V; VO = 15 V; VID = –1 V
Sink
TA = –40°C to 125°C
Output current
TA = –40°C to 125°C
ISC
Short-circuit current
5
5
20
mV
–30
mA
20
5
Non-V suffix device
VID = -1 V; VO = 200 mV
4
–10
10
IO
V
6
VS = maximum; RL ≥
10 kΩ
VS = 5 V; RL ≤ 10 kΩ
3
TA = –40°C to 125°C
30
µA
V-suffix device
12
VS = 10 V; VO = VS / 2
40
±40
±60
mA
POWER SUPPLY
IQ
(1)
(2)
Quiescent current per amplifier
VO = 2.5 V; IO = 0 A
VS = maximum; VO = maximum / 2; IO = 0 A
TA = –40°C to 125°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 26 V for LM2904 and 32 V for LM2904V.
All typical values are TA = 25°C.
Copyright © 1976–2019, Texas Instruments Incorporated
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11
LM158, LM158A, LM258, LM258A
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SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
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7.9 Electrical Characteristics: LM158, LM158A
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP (2)
MAX
3
5
UNIT
OFFSET VOLTAGE
LM158
VOS
Input offset voltage
TA = –55°C to 125°C
VS = 5 V to 30 V; VCM = 0 V; VO = 1.4 V
7
mV
2
LM158A
TA = –55°C to 125°C
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power supply
(ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
4
LM158
TA = –55°C to 125°C
7
LM158A
TA = –55°C to 125°C
7
65
15 (3)
µV/°C
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to 30 V
LM158
VS = 30 V
LM158A
VS = 5 V to 30 V
LM158
VS = 30 V
LM158A
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = –55°C to 125°C
VS = 5 V to 30 V; VCM = 0 V
70
80
dB
INPUT BIAS CURRENT
–20
–150
LM158
IB
Input bias current
TA = –55°C to 125°C
VO = 1.4 V
–300
nA
–15
–50
LM158A
TA = –55°C to 125°C
–100
2
30
LM158
IOS
Input offset current
TA = –55°C to 125°C
VO = 1.4 V
100
nA
2
10
LM158A
TA = –55°C to 125°C
30
10
dIOS/dT
Input offset current drift
pA/°C
LM158A
TA = –55°C to 125°C
200
NOISE
en
Input voltage noise density
f = 1 kHz
40
nV/√Hz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
50
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
100
V/mV
TA = –55°C to 125°C
25
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
G = +1
0.7
MHz
0.3
V/µs
OUTPUT
VS = 30 V; RL = 2 kΩ
Positive rail
VO
Voltage output swing from rail
TA = –55°C to 125°C
4
VS = 30 V; RL ≥ 10 kΩ
2
Negative rail
VS = 5 V; RL ≤ 10 kΩ
VS = 15 V; VO = 0 V; VID = 1 V
Source
TA = –55°C to 125°C
5
VS = 15 V; VO = 15 V; VID = –1
V
Short-circuit current
mV
–60
–10
10
mA
20
Sink
TA = –55°C to 125°C
VID = –1 V; VO = 200 mV
ISC
20
–30
LM158A
TA = –55°C to 125°C
Output current
V
1.5
–20
IO
3
VS = 5 V; RL ≥ 2 kΩ
5
12
VS = 10 V; VO = VS / 2
30
±40
µA
±60
mA
POWER SUPPLY
IQ
(1)
(2)
(3)
12
Quiescent current per amplifier
VO = 2.5 V; IO = 0 A
VS = 30 V; VO = 15 V; IO = 0 A
TA = –55°C to 125°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 30 V for LM158 and LM158A.
All typical values are TA = 25°C.
On products compliant to MIL-PRF-38535, this parameter is not production tested.
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SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
7.10 Electrical Characteristics: LM258, LM258A
For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted)
TEST CONDITIONS (1)
PARAMETER
MIN
TYP (2)
MAX
3
5
UNIT
OFFSET VOLTAGE
LM258
VOS
Input offset voltage
TA = –25°C to 85°C
VS = 5 V to 30 V; VCM = 0 V; VO = 1.4 V
7
mV
2
3
LM258A
TA = –25°C to 85°C
4
LM258
dVOS/dT
Input offset voltage drift
PSRR
Input offset voltage vs power supply
(ΔVIO/ΔVS)
VS = 5 V to 30 V
VO1/ VO2
Channel separation
f = 1 kHz to 20 kHz
LM258A
7
TA = –25°C to 85°C
µV/°C
7
65
15
100
dB
120
dB
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
VS = 5 V to 30 V
LM258
VS = 30 V
LM258A
VS = 5 V to 30 V
LM258
VS = 30 V
LM258A
(V–)
(V+) – 1.5
(V–)
(V+) – 2
V
TA = –25°C to 85°C
VS = 5 V to 30 V; VCM = 0 V
70
80
dB
INPUT BIAS CURRENT
–20
–150
LM258
IB
Input bias current
TA = –25°C to 85°C
VO = 1.4 V
–300
nA
–15
–80
LM258A
TA = –25°C to 85°C
–100
2
30
LM258
IOS
Input offset current
TA = –25°C to 85°C
VO = 1.4 V
100
nA
2
15
LM258A
TA = –25°C to 85°C
30
10
dIOS/dT
Input offset current drift
pA/°C
LM258A
TA = –25°C to 85°C
200
NOISE
en
Input voltage noise density
f = 1 kHz
40
nV/√Hz
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
50
VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ
100
V/mV
TA = –25°C to 85°C
25
FREQUENCY RESPONSE
GBW
Gain bandwidth product
SR
Slew rate
G = +1
0.7
MHz
0.3
V/µs
OUTPUT
VS = 30 V; RL = 2 kΩ
Positive rail
VO
Voltage output swing from rail
TA = –25°C to 85°C
4
VS = 30 V; RL ≥ 10 kΩ
2
Negative rail
VS = 5 V; RL ≤ 10 kΩ
VS = 15 V; VO = 0 V; VID = 1 V
Source
TA = –25°C to 85°C
5
VS = 15 V; VO = 15 V; VID = –1
V
Short-circuit current
mV
–60
–10
10
mA
20
Sink
TA = –25°C to 85°C
VID = –1 V; VO = 200 mV
ISC
20
–30
LM258A
TA = –25°C to 85°C
Output current
V
1.5
–20
IO
3
VS = 5 V; RL ≥ 2 kΩ
5
12
VS = 10 V; VO = VS / 2
30
±40
µA
±60
mA
POWER SUPPLY
IQ
(1)
(2)
Quiescent current per amplifier
VO = 2.5 V; IO = 0 A
VS = 30 V; VO = 15 V; IO = 0 A
TA = –25°C to 85°C
350
600
500
1000
µA
All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.
Maximum VS for testing purposes is 30 V for LM258 and LM258A.
All typical values are TA = 25°C.
Copyright © 1976–2019, Texas Instruments Incorporated
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13
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LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com
7.11 Typical Characteristics
20
30
18
27
16
24
14
21
Amplifiers (%)
Amplifiers (%)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
12
10
8
18
15
12
6
9
4
6
2
3
0
-1800
0
-1200
-600
0
600
Offset Voltage (µV)
1200
1800
0
DC11
0.25 0.5 0.75 1 1.25 1.5 1.75 2
Offset Voltage Drift (µV/°C)
750
500
450
300
150
-150
-450
100
-100
-300
-750
-40
-20
0
20
40
60
Temperature (°C)
80
100
-500
-18
120
80
90
60
70
80
60
70
50
60
40
50
30
40
20
30
10
20
10
Gain (dB)
Phase (°)
-20
10k
100k
Frequency (Hz)
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12
17
DC10
40
30
20
10
0
-10
-20
-10
-30
1M
G=1
G = 10
G = 100
G = 1000
G = –1
50
0
1k
D012
Figure 5. Open-Loop Gain and Phase vs Frequency
14
Closed Lopp Voltage Gain (dB)
70
0
-6
0
6
Common-Mode Voltage (V)
Figure 4. Offset Voltage vs Common-Mode Voltage
100
Phase ( )
Open Loop Voltage Gain (dB)
Figure 3. Offset Voltage vs Temperature
1k
-12
DC10
90
-10
DC12
Figure 2. Offset Voltage Drift Distribution
Offset Voltage (µV)
Offset Voltage (µV)
Figure 1. Offset Voltage Production Distribution
2.25 2.5 2.75
10k
100k
Frequency (Hz)
1M
D017
Figure 6. Closed-Loop Gain vs Frequency
Copyright © 1976–2019, Texas Instruments Incorporated
Product Folder Links: LM158 LM158A LM258 LM258A LM358 LM358A LM358B LM358BA LM2904 LM2904B
LM2904BA LM2904V
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com
SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
Typical Characteristics (continued)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
-5
120
IB+
IB–
Input Offset Current (pA)
100
Input Bias Current (nA)
-7.5
-10
-12.5
80
60
40
20
0
-20
-15
-20
-15
-10
-5
0
5
10
Common-Mode Voltage (V)
15
-40
-20
20
-10
-5
0
5
10
Common-Mode Voltage (V)
-7
0.045
-8
-9
IB+
IB–
15
20
DC3I
Figure 8. Input Offset Current vs Common-Mode Voltage
0.06
Input Offset Current (nA)
Input Bias Current (nA)
Figure 7. Input Bias Current vs Common-Mode Voltage
-6
-10
-15
DC3I
0.03
0.015
0
-0.015
-11
-12
-40
-10
20
50
Temperature (°C)
80
110
-0.03
-40
130
-10
20
50
Temperature (°C)
DCIB
Figure 9. Input Bias Current vs Temperature
80
110
130
DCIO
Figure 10. Input Offset Current vs Temperature
V+
(V–) + 18 V
–40 C
25 C
125 C
(V–) + 15 V
Output Voltage (V)
Output Voltage (V)
(V+) – 3 V
(V+) – 6 V
(V–) + 12 V
(V–) + 9 V
(V–) + 6 V
(V+) – 9 V
–40 C
25 C
125 C
(V–) + 3 V
V–
(V+) – 12 V
0
10
20
30
Output Current (mA)
40
Figure 11. Output Voltage Swing vs
Output Current (Sourcing)
Copyright © 1976–2019, Texas Instruments Incorporated
50
DC13
0
5
10
15
20
25
Output Current (mA)
30
35
40
DC1-
Figure 12. Output Voltage Swing vs
Output Current (Sinking)
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Typical Characteristics (continued)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
120
100
90
PSRR and CMRR (dB)
80
Common-Mode Rejection Ratio (dB)
PSRR+
PSRRCMRR
70
60
50
40
30
20
10
10k
100k
Frequency (Hz)
110
105
100
95
90
VS = 36V
VS = 5V
85
-40
0
1k
115
1M
20
50
Temperature (°C)
D001
Figure 13. CMRR and PSRR vs Frequency
80
110
130
DC2_
Figure 14. Common-Mode Rejection Ratio vs
Temperature (dB)
-118
1.6
1.2
-119
0.8
Voltage (µV)
Power Supply Rejection Ratio (dB)
-10
-120
-121
0.4
0
-0.4
-0.8
-1.2
-122
-1.6
-123
-40
-2
-20
0
20
40
60
80
Temperature (°C)
100
120
0
140
1
2
DC8_
3
4
5
6
Time (s)
7
8
9
10
D011
VS = 5 V to 36 V
Figure 16. 0.1-Hz to 10-Hz Noise
100
-32
90
-40
80
-48
70
-56
THD+N (dB)
Voltage Noise Spectral Density (nV/—Hz)
Figure 15. Power Supply Rejection Ratio vs
Temperature (dB)
60
50
40
10 k
2k
-64
-72
-80
-88
30
20
-96
10
-104
0
10
-112
100
1k
Frequency (Hz)
10k
100k
D010
100
1k
Frequency (Hz)
10k
D013
G = 1, f = 1 kHz, BW = 80 kHz,
VOUT = 10 VPP, RL connected to V–
Figure 17. Input Voltage Noise Spectral Density vs
Frequency
16
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Figure 18. THD+N Ratio vs Frequency, G = 1
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Typical Characteristics (continued)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
-32
-30
10 k
2k
-40
-48
-50
-56
-60
THD+N (dB)
THD+N (dB)
-40
-64
-72
-70
-80
-80
-90
-88
-100
-96
-110
-104
100
1k
Frequency (Hz)
10k
0.01
D014
G = –1, f = 1 kHz, BW = 80 kHz,
VOUT = 10 VPP, RL connected to V–
0.1
Amplitude (VPP)
1
10 20
D015
G = 1, f = 1 kHz, BW = 80 kHz,
RL connected to V–
Figure 19. THD+N Ratio vs Frequency, G = –1
Figure 20. THD+N vs Output Amplitude, G = 1
-20
460
-35
430
Quiescent Current (µA)
THD+N (dB)
10 k
2k
-120
0.001
-50
-65
-80
400
370
340
310
-95
10 k
2k
280
-110
0.001
0.01
0.1
Amplitude (VPP)
1
3
10 20
9
15
21
Supply Voltage (V)
D016
27
33
36
DC_S
G = –1, f = 1 kHz, BW = 80 kHz,
RL connected to V–
Figure 21. THD+N vs Output Amplitude, G = –1
Figure 22. Quiescent Current vs Supply Voltage
540
500
VS = 36V
VS = 5V
Open Loop Output Impedance ( )
Quiescent Current per Amplifier (µA)
600
480
420
360
300
240
-40
-20
0
20
40
60
Temperature (°C)
80
100
120
Figure 23. Quiescent Current vs Temperature
Copyright © 1976–2019, Texas Instruments Incorporated
DC4_
400
300
200
100
1k
10k
100k
Frequency (Hz)
1M
D006
Figure 24. Open-Loop Output Impedance vs Frequency
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Typical Characteristics (continued)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
44
18
Overshoot (+)
Overshoot (-)
36
14
32
12
28
24
20
10
8
6
16
4
12
2
8
0
40
80
Overshoot (+)
Overshoot (–)
16
Overshoot (%)
Overshoot (%)
40
120 160 200 240
Capacitance load (pF)
280
320
0
40
360
G = 1, 100-mV output step, RL = open
120
160
200
240
Capacitance load (pF)
280
320
360
D020
G = –1, 100-mV output step, RL = open
Figure 25. Small-Signal Overshoot vs Capacitive Load
Figure 26. Small-Signal Overshoot vs Capacitive Load
20
60
Input
Output
57
54
10
51
Voltage (V)
Phase Margin (°)
80
D019
48
45
42
39
0
-10
36
33
-20
30
0
40
80
120 160 200 240
Capacitance Load (pF)
280
320
0
360
200
D018
400
600
Time ( s)
800
1000
D021
G = –10
Figure 28. Overload Recovery
10
7.5
7.5
5
5
Voltage (mV)
Voltage (mV)
Figure 27. Phase Margin vs Capacitive Load
10
2.5
0
-2.5
-5
0
-2.5
-5
-7.5
-7.5
Input
Output
-10
Input
Output
-10
0
20
40
60
80
Time ( s)
G = 1, RL = open
Figure 29. Small-Signal Step Response, G = 1
18
2.5
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100
D022
0
20
40
60
80
100
Time ( s)
D023
G = –1, RL = open, RFB = 10K
Figure 30. Small-Signal Step Response, G = –1
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Typical Characteristics (continued)
20
40
16
32
Output Delta from Final Value (mV)
Output Delta from Final Value (mV)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
12
8
4
0
-4
-8
-12
-16
24
16
8
0
-8
-16
-24
-32
-20
-40
0
0.5
1
1.5
2
2.5
3
Time ( s)
3.5
4
4.5
5
0
0.5
1
1.5
G = 1, RL = open
2.5
3
Time ( s)
3.5
4
4.5
5
D004
G = 1, RL = open
Figure 31. Large-Signal Step Response (Rising)
Figure 32. Large-Signal Step Response (Falling)
2.5
0.675
Output
Input
2
Positive
Negative
1.5
0.625
Slew Rate(V/ s)
1
Votlage (V)
2
D003
0.5
0
-0.5
-1
-1.5
0.575
0.525
0.475
-2
-2.5
0
20
40
60
80
100
Time (µs)
0.425
-40
-25
-10
5
20
AC_S
35 50 65
Temp( C)
80
95
110 125
D009
G = 1, RL = open
Figure 34. Slew Rate vs Temperature
Figure 33. Large-Signal Step Response
Short-Circuit Current (mA)
40
20
Sinking
Sourcing
0
-20
-40
-60
-40 -25 -10
5
20 35 50 65
Temperature (°C)
80
95
110 125
DC7_
Maximum Output Voltage (V PP)
60
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1k
10k
100k
Frequency (Hz)
1M
D005
VS = 15 V
Figure 35. Short-Circuit Current vs Temperature
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Figure 36. Maximum Output Voltage vs Frequency
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Typical Characteristics (continued)
Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with
TA = 25°C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted).
-75
90
84
78
72
-95
EMIRR (dB)
Channel Separation (dB)
-85
-105
-115
66
60
54
48
42
36
-125
30
-135
1k
10k
100k
Frequency (Hz)
Figure 37. Channel Separation vs Frequency
20
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24
1M
1M
D008
10M
100M
Frequency (Hz)
1G
D007
Figure 38. EMIRR (Electromagnetic Interference Rejection
Ratio) vs Frequency
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7.12 Typical Characteristics
Typical characteristics section is applicable for LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, and LM2904V.
20
0.36
18
0.34
–55C
0C
125C
Supply Current (mA)
Input Current (nAdc)
16
14
12
10
8
5Vdc
15Vdc
30Vdc
6
4
0.32
0.3
0.28
0.26
0.24
0.22
2
0
–55
–35
–15
5
45
25
65
Temperature (°C)
85
105
0.2
125
0
5
Figure 39. Input Current vs Temperature
25
30
Figure 40. Supply Current vs Supply Voltage
160
100
CMRR
90
RL=20K
RL=2K
140
80
120
70
100
CMRR (dB)
Avol Voltage Gain (dB)
10
15
20
Supply Voltage (Vdc)
80
60
50
40
30
40
20
20
10
0
0
0
5
10
15
20
25
30
V+ Supply Voltage (Vdc)
35
0.1
40
1
10
100
1000
Frequency (kHz)
Figure 41. Voltage Gain vs Supply Voltage
C001
Figure 42. Common-Mode Rejection Ratio vs Frequency
0.50
3.5
VOUT
3.0
0.45
Voltage (V)
2.5
Voltage (V)
60
2.0
1.5
0.40
0.35
0.30
1.0
0.25
0.5
VOUT
0.20
0.0
0
4
8
12
16
20
24
Time ( s)
28
32
36
40
C001
Figure 43. Voltage Follower Large Signal Response (50 pF)
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0
2
4
6
8
Time ( s)
10
C001
Figure 44. Voltage Follower Small Signal Response (50 pF)
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Typical Characteristics (continued)
Typical characteristics section is applicable for LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, and LM2904V.
8
Output Voltage (Vdc) relative to Vcc
20
17.5
Output Swing (Vp-p)
15
12.5
10
7.5
5
2.5
0
1
10
100
Frequency (kHz)
7
6
5
4
3
2
1
0.001
1k
Figure 45. Maximum Output Swing vs Frequency
(VCC = 15 V)
0.1
1
Output Sink Current (mAdc)
10
100
Figure 46. Output Sourcing Characteristics
90
10
5Vdc
15Vdc
30Vdc
80
Output Current (mAdc)
Output Voltage (Vdc)
0.01
1
0.1
70
60
50
40
30
20
10
0.01
0.001
0
0.01
0.1
1
10
Output Sink Current (mAdc)
Figure 47. Output Sinking Characteristics
22
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100
–55
–35
–15
5
45
25
65
Temperature (°C)
85
105
125
Figure 48. Source Current Limiting
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8 Parameter Measurement Information
900 Ω
VCC+
VCC+
−
VI
VO
+
100 Ω
−
VI = 0 V
RS
VCC−
CL
RL
VO
+
VCC−
Figure 49. Unity-Gain Amplifier
10 k
–
Figure 50. Noise-Test Circuit
+18V
VIN
+
RL
-18V
GND
GND
Figure 51. Test Circuit, G = –1, for THD+N and Small-Signal Step Response
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9 Detailed Description
9.1 Overview
These devices consist of two independent, high-gain frequency-compensated operational amplifiers designed to
operate from a single supply over a wide range of voltages. Operation from split supplies also is possible if the
difference between the two supplies is within the supply voltage range specified in the Recommended Operating
Conditions section, and VS is at least 1.5 V more positive than the input common-mode voltage. The low supplycurrent drain is independent of the magnitude of the supply voltage.
Applications include transducer amplifiers, dc amplification blocks, and all the conventional operational amplifier
circuits that now can be implemented more easily in single-supply-voltage systems. For example, these devices
can be operated directly from the standard 5-V supply used in digital systems and easily can provide the required
interface electronics without additional ±5-V supplies.
9.2 Functional Block Diagram - LM358B, LM358BA, LM2904B, LM2904BA
VCC+
~6 µA
Curren t
Regula tor
~6 µA
Curren t
Regula tor
~100 µA
Curren t
Regula tor
IN-
OUT
IN+
24
~120 µA
Curren t
Regula tor
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9.3 Feature Description
9.3.1 Unity-Gain Bandwidth
The unity-gain bandwidth is the frequency up to which an amplifier with a unity gain may be operated without
greatly distorting the signal. These devices have a 1.2-MHz unity-gain bandwidth (B Version).
9.3.2 Slew Rate
The slew rate is the rate at which an operational amplifier can change its output when there is a change on the
input. These devices have a 0.5-V/µs slew rate (B Version).
9.3.3 Input Common Mode Range
The valid common mode range is from device ground to VS – 1.5 V (VS – 2 V across temperature). Inputs may
exceed VS up to the maximum VS without device damage. At least one input must be in the valid input commonmode range for the output to be the correct phase. If both inputs exceed the valid range, then the output phase is
undefined. If either input more than 0.3 V below V– then input current should be limited to 1 mA and the output
phase is undefined.
9.4 Device Functional Modes
These devices are powered on when the supply is connected. This device can be operated as a single-supply
operational amplifier or dual-supply amplifier, depending on the application.
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The LMx58 and LM2904 operational amplifiers are useful in a wide range of signal conditioning applications.
Inputs can be powered before VS for flexibility in multiple supply circuits.
10.2 Typical Application
A typical application for an operational amplifier is an inverting amplifier. This amplifier takes a positive voltage on
the input, and makes it a negative voltage of the same magnitude. In the same manner, it also makes negative
voltages positive.
RF
RI
Vsup+
VOUT
VIN
+
Vsup-
Figure 52. Application Schematic
10.2.1 Design Requirements
The supply voltage must be chosen such that it is larger than the input voltage range and output range. For
instance, this application scales a signal of ±0.5 V to ±1.8 V. Setting the supply at ±12 V is sufficient to
accommodate this application.
10.2.2 Detailed Design Procedure
Determine the gain required by the inverting amplifier using Equation 1 and Equation 2:
VOUT
AV
VIN
1.8
AV
3.6
0.5
(1)
(2)
Once the desired gain is determined, choose a value for RI or RF. [Subscripts should be fixed in the
accompanying figures and equations also.] Choosing a value in the kilohm range is desirable because the
amplifier circuit uses currents in the milliampere range. This ensures the part does not draw too much current.
This example uses 10 kΩ for RI which means 36 kΩ is used for RF. This was determined by Equation 3.
RF
AV
(3)
RI
26
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Typical Application (continued)
10.2.3 Application Curve
2
VIN
1.5
VOUT
1
Volts
0.5
0
-0.5
-1
-1.5
-2
0
0.5
1
Time (ms)
1.5
2
Figure 53. Input and Output Voltages of the Inverting Amplifier
11 Power Supply Recommendations
CAUTION
Supply voltages larger than specified in the recommended operating region can
permanently damage the device (see the Absolute Maximum Ratings).
Place 0.1-µF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or highimpedance power supplies. For more detailed information on bypass capacitor placement, see the Layout
section.
12 Layout
12.1 Layout Guidelines
For best operational performance of the device, use good PCB layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole, as well as the
operational amplifier. Bypass capacitors are used to reduce the coupled noise by providing low-impedance
power sources local to the analog circuitry.
– Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for singlesupply applications.
• Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital
and analog grounds, paying attention to the flow of the ground current.
• To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If
it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular as
opposed to in parallel with the noisy trace. [Things in parallel never cross, by definition]
• Place the external components as close to the device as possible. Keeping RF and RG close to the inverting
input minimizes parasitic capacitance, as shown in Layout Examples.
• Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
• Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce
leakage currents from nearby traces that are at different potentials.
Copyright © 1976–2019, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: LM158 LM158A LM258 LM258A LM358 LM358A LM358B LM358BA LM2904 LM2904B
LM2904BA LM2904V
27
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com
12.2 Layout Examples
Place components close to
device and to each other to
reduce parasitic errors
Run the input traces as far
away from the supply lines
as possible
VS+
RF
OUT1
V+
GND
IN1í
OUT2
VIN
IN1+
IN2í
Ví
IN2+
RG
GND
R IN
Only needed for
dual-supply
operation
GND
Use low-ESR, ceramic
bypass capacitor
VSí
(or GND for single supply)
Ground (GND) plane on another layer
Figure 54. Operational Amplifier Board Layout for Noninverting Configuration
RIN
VIN
+
VOUT
RG
RF
Figure 55. Operational Amplifier Schematic for Noninverting Configuration
28
Submit Documentation Feedback
Copyright © 1976–2019, Texas Instruments Incorporated
Product Folder Links: LM158 LM158A LM258 LM258A LM358 LM358A LM358B LM358BA LM2904 LM2904B
LM2904BA LM2904V
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
www.ti.com
SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
• Texas Instruments, Circuit Board Layout Techniques.
13.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to order now.
Table 1. Related Links
PARTS
PRODUCT FOLDER
ORDER NOW
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
LM158
Click here
Click here
Click here
Click here
Click here
LM158A
Click here
Click here
Click here
Click here
Click here
LM258
Click here
Click here
Click here
Click here
Click here
LM258A
Click here
Click here
Click here
Click here
Click here
LM358
Click here
Click here
Click here
Click here
Click here
LM358A
Click here
Click here
Click here
Click here
Click here
LM358B
Click here
Click here
Click here
Click here
Click here
LM2904
Click here
Click here
Click here
Click here
Click here
LM2904B
Click here
Click here
Click here
Click here
Click here
LM2904V
Click here
Click here
Click here
Click here
Click here
13.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
13.4 Community Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
13.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
13.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.
Copyright © 1976–2019, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: LM158 LM158A LM258 LM258A LM358 LM358A LM358B LM358BA LM2904 LM2904B
LM2904BA LM2904V
29
LM158, LM158A, LM258, LM258A
LM358, LM358A, LM358B, LM358BA, LM2904, LM2904B, LM2904BA, LM2904V
SLOS068W – JUNE 1976 – REVISED OCTOBER 2019
www.ti.com
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and without
revision of this document. For browser based versions of this data sheet, see the left-hand navigation pane.
30
Submit Documentation Feedback
Copyright © 1976–2019, Texas Instruments Incorporated
Product Folder Links: LM158 LM158A LM258 LM258A LM358 LM358A LM358B LM358BA LM2904 LM2904B
LM2904BA LM2904V
PACKAGE OPTION ADDENDUM
www.ti.com
23-Mar-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
5962-87710012A
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
596287710012A
LM158FKB
5962-8771001PA
ACTIVE
CDIP
JG
8
1
TBD
Call TI
N / A for Pkg Type
-55 to 125
8771001PA
LM158
5962-87710022A
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
596287710022A
LM158AFKB
5962-8771002PA
ACTIVE
CDIP
JG
8
1
TBD
Call TI
N / A for Pkg Type
-55 to 125
8771002PA
LM158A
LM158 MW8
ACTIVE
WAFERSALE
YS
0
1
Green (RoHS
& no Sb/Br)
Call TI
Level-1-NA-UNLIM
-55 to 125
LM158AFKB
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
596287710022A
LM158AFKB
LM158AJG
ACTIVE
CDIP
JG
8
1
TBD
Call TI
N / A for Pkg Type
-55 to 125
LM158AJG
LM158AJGB
ACTIVE
CDIP
JG
8
1
TBD
Call TI
N / A for Pkg Type
-55 to 125
8771002PA
LM158A
LM158FKB
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
596287710012A
LM158FKB
LM158JG
ACTIVE
CDIP
JG
8
1
TBD
Call TI
N / A for Pkg Type
-55 to 125
LM158JG
LM158JGB
ACTIVE
CDIP
JG
8
1
TBD
Call TI
N / A for Pkg Type
-55 to 125
8771001PA
LM158
LM258AD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258A
LM258ADGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-25 to 85
(M3L, M3P, M3S, M3
U)
LM258ADR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU | SN
Level-1-260C-UNLIM
-25 to 85
LM258A
LM258ADRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258A
LM258ADRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258A
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
23-Mar-2020
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM258AP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
NIPDAU | SN
N / A for Pkg Type
-25 to 85
LM258AP
LM258APE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
NIPDAU
N / A for Pkg Type
-25 to 85
LM258AP
LM258D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-25 to 85
(M2L, M2P, M2S, M2
U)
LM258DGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAUAG
Level-1-260C-UNLIM
-25 to 85
(M2L, M2P, M2S, M2
U)
LM258DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU | SN
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DRG3
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-25 to 85
LM258
LM258DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-25 to 85
LM258
LM258P
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
NIPDAU | SN
N / A for Pkg Type
-25 to 85
LM258P
LM258PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
NIPDAU
N / A for Pkg Type
-25 to 85
LM258P
LM2904AVQDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904AVQDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904AVQPWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904AVQPWRG4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904AV
LM2904BAIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
2904BA
LM2904BIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
L2904B
LM2904BIPWR
PREVIEW
TSSOP
PW
8
2000
TBD
Call TI
Call TI
-40 to 125
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
23-Mar-2020
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM2904D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DE4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
(MBL, MBP, MBS, MB
U)
LM2904DGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
(MBL, MBP, MBS, MB
U)
LM2904DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DRG3
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
LM2904
LM2904P
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
NIPDAU | SN
N / A for Pkg Type
-40 to 125
LM2904P
LM2904PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
NIPDAU
N / A for Pkg Type
-40 to 125
LM2904P
LM2904PSR
ACTIVE
SO
PS
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PW
ACTIVE
TSSOP
PW
8
150
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PWRG3
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904PWRG4-JF
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904
LM2904QDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2904Q1
LM2904QDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2904Q1
Addendum-Page 3
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
23-Mar-2020
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM2904VQDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
LM2904VQDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
LM2904VQPWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
LM2904VQPWRG4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
-40 to 125
L2904V
LM358AD
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
LM358ADE4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
LM358ADG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
LM358ADGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
0 to 70
(M6L, M6P, M6S, M6
U)
LM358ADGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAUAG
Level-1-260C-UNLIM
0 to 70
(M6L, M6P, M6S, M6
U)
LM358ADR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU | SN
Level-1-260C-UNLIM
0 to 70
LM358A
LM358ADRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
LM358ADRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358A
LM358AP
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
NIPDAU | SN
N / A for Pkg Type
0 to 70
LM358AP
LM358APE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
NIPDAU
N / A for Pkg Type
0 to 70
LM358AP
LM358APW
ACTIVE
TSSOP
PW
8
150
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
L358A
LM358APWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU | SN
Level-1-260C-UNLIM
0 to 70
L358A
LM358APWRG4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
L358A
LM358BAIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
Addendum-Page 4
L358BA
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
23-Mar-2020
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Green (RoHS
& no Sb/Br)
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
Device Marking
(4/5)
LM358BIDR
ACTIVE
SOIC
D
8
2500
LM358BIPWR
PREVIEW
TSSOP
PW
8
2000
TBD
Call TI
Call TI
-40 to 85
LM358D
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358DG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358DGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU | NIPDAUAG
Level-1-260C-UNLIM
0 to 70
(M5L, M5P, M5S, M5
U)
LM358DGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
NIPDAUAG
Level-1-260C-UNLIM
0 to 70
(M5L, M5P, M5S, M5
U)
LM358DR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU | SN
Level-1-260C-UNLIM
0 to 70
LM358
LM358DRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358DRG3
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
0 to 70
LM358
LM358DRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
LM358
LM358P
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
NIPDAU | SN
N / A for Pkg Type
0 to 70
LM358P
LM358PE3
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
SN
N / A for Pkg Type
0 to 70
LM358P
LM358PE4
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
NIPDAU
N / A for Pkg Type
0 to 70
LM358P
LM358PSR
ACTIVE
SO
PS
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
L358
LM358PW
ACTIVE
TSSOP
PW
8
150
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
L358
LM358PWR
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU | SN
Level-1-260C-UNLIM
0 to 70
L358
LM358PWRG3
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
0 to 70
L358
LM358PWRG4
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
L358
Addendum-Page 5
LM358B
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
23-Mar-2020
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM358PWRG4-JF
ACTIVE
TSSOP
PW
8
2000
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
0 to 70
PLM2904BIPWR
ACTIVE
TSSOP
PW
8
2000
TBD
Call TI
Call TI
-40 to 125
PLM358BIPWR
ACTIVE
TSSOP
PW
8
2000
TBD
Call TI
Call TI
-40 to 85
L358
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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