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LM431
SNVS020H – MAY 2000 – REVISED JANUARY 2016
LM431 Adjustable Precision Zener Shunt Regulator
1 Features
3 Description
•
•
The LM431 is a 3-terminal adjustable shunt regulator
with ensured temperature stability over the entire
temperature range of operation. The output voltage
may be set at any level greater than 2.5 V (VREF) up
to 36 V merely by selecting two external resistors that
act as a voltage divided network. Due to the sharp
turnon characteristics this device is an excellent
replacement for many Zener diode applications.
1
•
•
•
•
•
Average Temperature Coefficient 50 ppm/°C
Temperature Compensated for Operation Over
the Full Temperature Range
Programmable Output Voltage
Fast Turnon Response
Low-Output Noise
Low-Dynamic Output Impedance
Available in Space-Saving SOIC-8, SOT-23, and
TO-92 Packages
2 Applications
•
•
•
•
•
Adjustable Voltage or Current Linear and
Switching Power Supplies
Voltage Monitoring
Current Source and Sink Circuits
Circuits Requiring Precision References
Zener Diode Replacements
LM431 Symbol
The LM431 is available in space-saving SOIC-8,
SOT-23, and TO-92 packages.
Device Information(1)
PART NUMBER
LM431
PACKAGE
BODY SIZE (NOM)
SOIC (8)
4.90 mm × 3.91 mm
SOT-23 (3)
2.92 mm × 1.30 mm
TO-92 (3)
4.30 mm × 4.30 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Functional Block Diagram
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM431
SNVS020H – MAY 2000 – REVISED JANUARY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Parameter Measurement Information .................. 7
Detailed Description ............................................ 10
8.1 Overview ................................................................. 10
8.2 Functional Block Diagram ...................................... 10
8.3 Feature Description................................................. 10
8.4 Device Functional Modes........................................ 11
9
Application and Implementation ........................ 12
9.1 Application Information............................................ 12
9.2 Typical Applications ................................................ 13
10 Power Supply Recommendations ..................... 19
11 Layout................................................................... 19
11.1 Layout Guidelines ................................................. 19
11.2 Layout Example .................................................... 19
12 Device and Documentation Support ................. 20
12.1
12.2
12.3
12.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
20
20
20
20
13 Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision G (March 2013) to Revision H
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
Changes from Revision F (April 2013) to Revision G
•
2
Page
Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 18
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SNVS020H – MAY 2000 – REVISED JANUARY 2016
5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
DBZ Package
3-Pin SOT-23
Top View
Note: NC = Not internally connected.
LP Package
3-Pin TO-92
Top View
Pin Functions
PIN
I/O
DESCRIPTION
NAME
SOIC
SOT-23
TO-92
Anode
2, 3, 6, 7
3
3
O
Anode pin, normally grounded
1
1
1
I/O
Shunt current/output voltage
4, 5
—
—
—
No connect
8
2
2
I
Cathode
NC
Reference
Reference pin for adjustable output voltage
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
Cathode voltage
MAX
UNIT
37
V
Reference voltage
–0.5
Continuous cathode current
–10
Reference input current
10
mA
0.78
W
TO-92 package
Internal power
dissipation (3) (4)
Operating temperature
(2)
(3)
(4)
mA
SOIC package
0.81
W
SOT-23 package
0.28
W
Industrial (LM431xI)
–40
85
°C
0
70
°C
–65
150
°C
Commercial (LM431xC)
Storage temperature
(1)
V
150
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
TJ Max = 150°C.
Ratings apply to ambient temperature at 25°C. Above this temperature, derate the TO-92 at 6.2 mW/°C, the SOIC at 6.5 mW/°C, the
SOT-23 at 2.2 mW/°C.
6.2 ESD Ratings
V(ESD)
(1)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
VALUE
UNIT
±2500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
Cathode voltage
VREF
37
UNIT
V
Cathode current
1
100
mA
6.4 Thermal Information
LM431
THERMAL METRIC (1)
D (SOIC)
DBZ (SOT-23)
LP (TO-92)
8 PINS
3 PINS
3 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
126.9
267.7
162.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
72.2
138.3
85.8
°C/W
RθJB
Junction-to-board thermal resistance
67.5
61
—
°C/W
ψJT
Junction-to-top characterization parameter
21.1
21.5
29.4
°C/W
ψJB
Junction-to-board characterization parameter
67
60.1
141.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
—
—
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5 Electrical Characteristics
TA = 25°C unless otherwise specified
PARAMETER
VREF
TEST CONDITIONS
Reference voltage
MIN
TYP
MAX
VZ = VREF, II = 10 mA
LM431A (Figure 6 )
2.44
2.495
2.55
VZ = VREF, II = 10 mA
LM431B (Figure 6 )
2.47
2.495
2.52
VZ = VREF, II = 10 mA
LM431C (Figure 6 )
2.485
2.5
2.51
8
17
VZ from VREF to 10 V
−1.4
−2.7
VZ from 10 V to 36 V
−1
−2
UNIT
V
VDEV
Deviation of reference input voltage
overtemperature (1)
VZ = VREF, II = 10 mA,
TA = full range (Figure 6 )
ΔVREF/
ΔVZ
Ratio of the change in reference voltage to the
change in cathode voltage
IZ = 10 mA
(Figure 7 )
IREF
Reference input current
R1 = 10 kΩ, R2 = ∞, II = 10 mA
(Figure 7 )
2
4
μA
∝IREF
Deviation of reference input current
overtemperature
R1 = 10 kΩ, R2 = ∞, II = 10 mA,
TA = full range (Figure 7 )
0.4
1.2
μA
IZ(MIN)
Minimum cathode current for regulation
VZ = VREF(Figure 6 )
0.4
1
mA
IZ(OFF)
OFF-state current
VZ = 36 V, VREF = 0 V (Figure 8)
0.3
1
μA
(1)
mV
mV/V
Deviation of reference input voltage, VDEV, is defined as the maximum variation of the reference input voltage over the full temperature
range.
The average temperature coefficient of the reference input voltage, ∝VREF, is defined as:
Where:
T2 – T1 = full temperature change (0–70°C).
VREF can be positive or negative depending on whether the slope is positive or negative.
Example: VDEV = 8 mV, VREF = 2495 mV, T2 – T1 = 70°C, slope is positive.
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Electrical Characteristics (continued)
TA = 25°C unless otherwise specified
PARAMETER
rZ
(2)
Dynamic output impedance
TEST CONDITIONS
(2)
MIN
TYP
MAX
VZ = VREF, LM431A,
Frequency = 0 Hz (Figure 6 )
0.75
VZ = VREF, LM431B, LM431C
Frequency = 0 Hz (Figure 6 )
0.5
UNIT
Ω
The dynamic output impedance, rZ, is defined as:
When the device is programmed with two external resistors, R1 and R2, (see Figure 7), the dynamic output impedance of the overall
circuit, rZ, is defined as:
6
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6.6 Typical Characteristics
Figure 1. Dynamic Impedance vs Frequency
Note: The areas under the curves represent conditions that may
cause the device to oscillate. For curves B, C, and D, R2 and V+
were adjusted to establish the initial VZ and IZ conditions with CL = 0.
V+ and CL were then adjusted to determine the ranges of stability.
Figure 2. Stability Boundary Conditions
7 Parameter Measurement Information
Figure 3. Test Circuit for Dynamic Impedance vs Frequency Curve
Figure 4. Test Circuit for Curve A Above
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Parameter Measurement Information (continued)
Figure 5. Test Circuit for Curves B, C and D Above
Figure 6. Test Circuit for VZ = VREF
Note: VZ = VREF (1 + R1/R2) + IREF × R1
Figure 7. Test Circuit for VZ > VREF
8
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Parameter Measurement Information (continued)
Figure 8. Test Circuit for OFF-State Current
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SNVS020H – MAY 2000 – REVISED JANUARY 2016
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8 Detailed Description
8.1 Overview
The LM431 is an adjustable precision shunt voltage regulator with ensured temperature stability over the entire
temperature range. The part has three different packages available to meet small footprint requirements, and is
available in three different tolerance grades.
8.2 Functional Block Diagram
Figure 9. LM431 Symbol
Figure 10. LM431 Block Diagram
8.3 Feature Description
The LM431 is a precision Zener diode. The part requires a small quiescent current for regulation, and regulates
the output voltage by shunting more or less current to ground, depending on input voltage and load. The only
external component requirement is a resistor between the cathode and the input voltage to set the input current.
An external capacitor can be used on the input or output, but is not required.
10
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Feature Description (continued)
Figure 11. Equivalent Circuit
8.4 Device Functional Modes
The LM431 is most commonly operated in closed-loop mode, where the reference node is tied to the output
voltage via a resistor divider. The output voltage remains in regulation as long as Iz is between 1 mA and 100
mA. The part can also be used in open-loop mode to act as a comparator, driving the feedback node from
another voltage source.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers must
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The LM431 is an adjustable precision shunt voltage regulator with ensured temperature stability over the entire
temperature range. For space critical applications, the LM431 is available in space saving SOIC-8, SOT-23 and
TO-92 packages. The minimum operating current is 1 mA while the maximum operating current is 100 mA.
The typical thermal hysteresis specification is defined as the change in 25°C voltage measured after thermal
cycling. The device is thermal cycled to temperature 0°C and then measured at 25°C. Next the device is thermal
cycled to temperature 70°C and again measured at 25°C. The resulting VOUT delta shift between the 25°C
measurements is thermal hysteresis. Thermal hysteresis is common in precision references and is induced by
thermal-mechanical package stress. Changes in environmental storage temperature, operating temperature and
board mounting temperature are all factors that can contribute to thermal hysteresis.
In a conventional shunt regulator application (Figure 12), an external series resistor (RS) is connected between
the supply voltage and the LM431 cathode pin. RS determines the current that flows through the load (ILOAD) and
the LM431 (IZ). Since load current and supply voltage may vary, RS must be small enough to supply at least the
minimum acceptable IZ to the LM431 even when the supply voltage is at its minimum and the load current is at
its maximum value. When the supply voltage is at its maximum and ILOAD is at its minimum, RS must be large
enough so that the current flowing through the LM431 is less than 100 mA.
RS must be selected based on the supply voltage, (V+), the desired load and operating current, (ILOAD and IZ),
and the output voltage, see Equation 1.
V - VO
RS = +
ILOAD + IZ
(1)
The LM431 output voltage can be adjusted to any value in the range of 2.5 V through 37 V. It is a function of the
internal reference voltage (VREF) and the ratio of the external feedback resistors as shown in Figure 12. The
output voltage is found using Equation 2.
VO = VREF * (1 + R1/R2)
where
•
VO is the output voltage (also, cathode voltage, VZ). The actual value of the internal VREF is a function of VZ. (2)
The corrected VREF is determined by Equation 3:
VREF = ∆VZ * (∆VREF/∆VZ) + VY
where
•
•
12
VY = 2.5 V and ∆VZ = (VZ– VY)
ΔVREF/ΔVZ is found in the Electrical Characteristics and is typically −1.4 mV/V for VZ raging from VREF to 10 V
and –1 mV/V for VZ raging from 10 V to 36 V.
(3)
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9.2 Typical Applications
9.2.1 Shunt Regulator
Figure 12. Shunt Regulator
9.2.1.1 Design Requirements
Design a shunt regulator with the following requirements:
• V+ > VO
• VO = 5 V
Select RS (a resistor between V+ and VO) such that: 1 mA < IZ < 100 mA
9.2.1.2 Detailed Design Procedure
The resistor RS must be selected such that current IZ remains in the operational region of the part for the entire
V+ range and load current range. The two extremes to consider are V+ at its minimum, and the load at its
maximum, where RS must be small enough for IZ to remain above 1 mA. The other extreme is V+ at its
maximum, and the load at its minimum, where RS must be large enough to maintain IZ < 100 mA. If unsure, try
using 1 mA ≤ IR ≤ 10 mA as a starting point; just remember the value of IZ varies with input voltage and load.
Use Equation 4 and Equation 5 to set RS between RS_MIN and RS_MAX.
V+ _ MAX - VO
RS _ MIN =
ILOAD _ MIN + IZ _ MAX
RS _ MAX =
(4)
V+ _ MIN - VO
ILOAD _ MAX + IZ _ MIN
(5)
Set feedback resistors R1 and R2 for a resistor divider based on Equation 2 and reproduced in Equation 6
VO = VREF * (1 + R1/R2)
(6)
So, for a 5-V output voltage, VO, and VREF of 2.5 V, simple calculation yields R1/R2 = 1. Based on this, select
R1 = 1 kΩ and R2 = 1 kΩ.
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Typical Applications (continued)
9.2.1.3 Application Curves
Figure 14. Thermal Information
Figure 13. Input Current vs VZ
Figure 15. Input Current vs VZ
9.2.2 Other Applications
Figure 16. Single Supply Comparator With Temperature Compensated Threshold
14
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Typical Applications (continued)
Figure 17. Series Regulator
Figure 18. Output Control of a Three Terminal Fixed Regulator
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Typical Applications (continued)
Figure 19. Higher Current Shunt Regulator
Figure 20. Crow Bar
16
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Typical Applications (continued)
Figure 21. Over Voltage and Under Voltage Protection Circuit
Figure 22. Voltage Monitor
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Typical Applications (continued)
Figure 23. Delay Timer
Figure 24. Current Limiter or Current Source
Figure 25. Constant Current Sink
18
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10 Power Supply Recommendations
While a bypass capacitor is not required on the input voltage line, TI recommends reducing noise on the input
which could affect the output. TI recommends a 0.1-µF ceramic capacitor or larger.
11 Layout
11.1 Layout Guidelines
Place external components as close to the device as possible. Place RS close to the cathode, as well as the
input bypass capacitor, if used. Keep feedback resistor close the device whenever possible.
11.2 Layout Example
RS physically close to device cathode
CIN physically close to device
COUT physically close to device
Figure 26. LM431 Layout Recommendation
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12 Device and Documentation Support
12.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
20
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PACKAGE OPTION ADDENDUM
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7-Oct-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LM431ACM/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
LM431
ACM
LM431ACM3/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
N1F
LM431ACM3X
NRND
SOT-23
DBZ
3
3000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
0 to 70
N1F
LM431ACM3X/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
N1F
LM431ACMX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
LM431
ACM
LM431ACZ/LFT3
ACTIVE
TO-92
LP
3
2000
RoHS & Green
SN
N / A for Pkg Type
LM431
ACZ
LM431ACZ/LFT4
ACTIVE
TO-92
LP
3
2000
RoHS & Green
SN
N / A for Pkg Type
LM431
ACZ
LM431ACZ/NOPB
ACTIVE
TO-92
LP
3
1800
RoHS & Green
Call TI
N / A for Pkg Type
0 to 70
LM431
ACZ
LM431AIM
NRND
SOIC
D
8
95
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
LM431
AIM
LM431AIM/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LM431
AIM
LM431AIM3
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
N1E
LM431AIM3/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
N1E
LM431AIM3X/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
N1E
LM431AIMX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LM431
AIM
LM431AIZ/LFT1
ACTIVE
TO-92
LP
3
2000
RoHS & Green
SN
N / A for Pkg Type
LM431AIZ/NOPB
ACTIVE
TO-92
LP
3
1800
RoHS & Green
Call TI
N / A for Pkg Type
-40 to 85
LM431BCM/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
Addendum-Page 1
LM431
AIZ
LM431
AIZ
431
BCM
Samples
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7-Oct-2021
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LM431BCM3
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
0 to 70
N1D
LM431BCM3/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
N1D
LM431BCM3X/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
N1D
LM431BCMX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
431
BCM
LM431BCZ/NOPB
ACTIVE
TO-92
LP
3
1800
RoHS & Green
Call TI
N / A for Pkg Type
0 to 70
LM431
BCZ
LM431BIM
NRND
SOIC
D
8
95
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
431
BIM
LM431BIM/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
431
BIM
LM431BIM3
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
N1C
LM431BIM3/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
N1C
LM431BIM3X
NRND
SOT-23
DBZ
3
3000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
N1C
LM431BIM3X/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
N1C
LM431BIMX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
431
BIM
LM431CCM/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
431
CCM
LM431CCM3/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
N1B
LM431CCM3X
NRND
SOT-23
DBZ
3
3000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
0 to 70
N1B
LM431CCM3X/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
0 to 70
N1B
LM431CCZ/NOPB
ACTIVE
TO-92
LP
3
1800
RoHS & Green
Call TI
N / A for Pkg Type
0 to 70
LM431
CCZ
LM431CIM
NRND
SOIC
D
8
95
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
431
CIM
LM431CIM/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
431
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
7-Oct-2021
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
CIM
LM431CIM3
NRND
SOT-23
DBZ
3
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
N1A
LM431CIM3/NOPB
ACTIVE
SOT-23
DBZ
3
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
N1A
LM431CIM3X
NRND
SOT-23
DBZ
3
3000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
N1A
LM431CIM3X/NOPB
ACTIVE
SOT-23
DBZ
3
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
N1A
LM431CIZ/NOPB
ACTIVE
TO-92
LP
3
1800
RoHS & Green
Call TI
N / A for Pkg Type
-40 to 85
LM431
CIZ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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