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LM709CH

LM709CH

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    TO99-8

  • 描述:

    IC OPAMP GP 1 CIRCUIT TO5-8

  • 数据手册
  • 价格&库存
LM709CH 数据手册
LM709 LM709 Operational Amplifier Literature Number: SNOS659A LM709 Operational Amplifier General Description The LM709 series is a monolithic operational amplifier intended for general-purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltage and bias currents. Further, the class-B output stage gives a large output capability with minimum power drain. e Connection Diagrams External components are used to frequency compensate the amplifier. Although the unity-gain compensation network specified will make the amplifier unconditionally stable in all feedback configurations, compensation can be tailored to optimize high-frequency performance for any gain setting. The LM709C is the commercial-industrial version of the LM709. It is identical to the LM709 except that it is specified for operation from 0§ C to a 70§ C. Dual-In-Line Package bs ol et Metal Can Package TL/H/11477 – 6 Order Number LM709CN-8 See NS Package Number N08E TL/H/11477 – 4 Dual-In-Line Package O Order Number LM709AH, LM709H or LM709CH See NS Package Number H08C C1995 National Semiconductor Corporation TL/H/11477 TL/H/11477 – 5 Order Number LM709CN See NS Package Number N14A RRD-B30M115/Printed in U. S. A. LM709 Operational Amplifier February 1995 Absolute Maximum Ratings (Note 3) Storage Temperature Range LM709/LM709A/LM709C If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage LM709/LM709A/LM709C b 65§ C to a 150§ C Lead Temperature (Soldering, 10 sec.) LM709/LM709A/LM709C 300§ C g 18V Power Dissipation (Note 1) LM709/LM709A LM709C Differential Input Voltage LM709/LM709A/LM709C Operating Ratings (Note 3) Junction Temperature Range (Note 1) b 55§ C to a 150§ C LM709/LM709A LM709C 0§ C to a 100§ C Thermal Resistance (iJA) H Package 150§ C/W, (iJC) 45§ C/W 8-Pin N Package 134§ C/W 14-Pin N Package 109§ C/W 300 mW 250 mW g 5V Input Voltage LM709/LM709A/LM709C g 10V Output Short-Circuit Duration (TA e a 25§ C) LM709/LM709A/LM709C 5 seconds Electrical Characteristics (Note 2) LM709A Conditions Min Typ LM709 Max TA e 25§ C, RS s 10 kX 0.6 2.0 Input Bias Current TA e 25§ C 100 200 10 50 Input Offset Current TA e 25§ C Input Resistance TA e 25§ C Output Resistance TA e 25§ C Supply Current TA e 25§ C, VS e g 15V Transient Response Risetime Overshoot VIN e 20 mV, CL s 100 pF TA e 25§ C Slew Rate TA e 25§ C LM709C Max Min 350 700 150 150 2.5 1.0 5.0 2.0 7.5 mV 500 300 1500 nA 50 200 100 500 400 50 150 Output Voltage Swing e e e e 25§ C to TMAX 25§ C to TMIN 25§ C to TMAX 25§ C to TMIN VS e g 15V, RL t 2 kX VOUT e g 10V VS e g 15V, RL e 10 kX VS e g 15V, RL e 2 kX VS e g 15V Common-Mode Rejection Ratio RS s 10 kX O Input Voltage Range 1.8 1.8 2.0 4.8 25 250 150 nA kX X 2.6 5.5 2.6 6.6 mA 1.5 30 0.3 10 1.0 30 0.3 10 1.0 30 ms % 0.25 3.0 TA TA TA TA Units Max 3.6 0.25 RS s 10 kX Average Temperature RS e 50X Coefficient of Input Offset Voltage RS e 10 kX Typ 200 bs ol Input Offset Voltage Large Signal Voltage Gain Typ et Input Offset Voltage Min e Parameter 10 10 15 25 70 0.25 6.0 3.0 6.0 25 45 70 V/ms 10 6.0 12 15 45 mV mV/§ C V/mV g 12 g 14 g 12 g 14 g 12 g 14 g 10 g 13 g 10 g 13 g 10 g 13 g8 g 10 g8 g 10 V 70 90 65 90 dB g8 80 110 V Supply Voltage Rejection Ratio RS s 10 kX 40 100 25 150 25 200 mV/V Input Offset Current TA e TMAX TA e TMIN 3.5 40 50 250 20 100 200 500 75 125 400 750 nA Input Bias Current TA e TMIN 0.3 0.6 0.5 1.5 0.36 2.0 mA Input Resistance TA e TMIN 85 170 40 100 50 250 kX Note 1: For operating at elevated temperatures, the device must be derated based on a 150§ C maximum junction temperature for LM709/LM709A and 100§ C maximum for L709C. For operating at elevated temperatures, the device must be derated based on thermal resistance iJA, TJ(MAX) and TA. Note 2: These specifications apply for b 55§ C s TA s a 125§ C for the LM709/LM709A and 0§ C s TA s a 70§ C for the LM709C with the following conditions: g 9V s VS s g 15V, C1 e 5000 pF, R1 e 1.5 kX, C2 e 200 pF and R2 e 51X. Note 3: Absolute Maximum Ratings indicate limits which if exceeded may result in damage. Operating Ratings are conditions where the device is expected to be functional but not necessarily within the guaranteed performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. 2 et e Schematic Diagram** TL/H/11477 – 1 Typical Applications** FET Operational Amplifier bs ol Unity Gain Inverting Amplifier TL/H/11477 – 3 TL/H/11477 – 2 Offset Balancing Circuit O Voltage Follower *To be used with any capacitive loading on output. TL/H/11477 – 7 **Pin connections shown are for metal can package. TL/H/11477 – 8 ² Should be equal to DC source resistance on input. 3 Guaranteed Performance Characteristics Input Common-Mode Voltage Range O bs ol et Supply Current Voltage Gain e Output Voltage Swing 4 TL/H/11477 – 9 Typical Performance Characteristics Input Bias Current Supply Current Slew Rate as a Function of Closed-Loop Gain Using Recommended Compensation Networks Frequency Response for Various Closed-Loop Gains Output Voltage Swing as a Function of Frequency bs ol et e Input Offset Current Input Bias Current as a Function of Supply Voltage O Output Voltage Swing 5 TL/H/11477 – 10 6 e et bs ol O et e Physical Dimensions inches (millimeters) O bs ol Metal Can Package (H) Order Number LM709AH, LM709H or LM709CH NS Package Number H08C 8-Lead Molded Dual-In-Line Package (N) Order Number LM709CN-8 NS Package Number N08E 7 et e LM709 Operational Amplifier Physical Dimensions inches (millimeters) (Continued) bs ol 14-Lead Molded Dual-In-Line Package (N) Order Number LM709CN NS Package Number N14A LIFE SUPPORT POLICY O NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation 1111 West Bardin Road Arlington, TX 76017 Tel: 1(800) 272-9959 Fax: 1(800) 737-7018 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Europe Fax: (a49) 0-180-530 85 86 Email: cnjwge @ tevm2.nsc.com Deutsch Tel: (a49) 0-180-530 85 85 English Tel: (a49) 0-180-532 78 32 Fran3ais Tel: (a49) 0-180-532 93 58 Italiano Tel: (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd. 13th Floor, Straight Block, Ocean Centre, 5 Canton Rd. Tsimshatsui, Kowloon Hong Kong Tel: (852) 2737-1600 Fax: (852) 2736-9960 National Semiconductor Japan Ltd. Tel: 81-043-299-2309 Fax: 81-043-299-2408 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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