LM709
LM709 Operational Amplifier
Literature Number: SNOS659A
LM709
Operational Amplifier
General Description
The LM709 series is a monolithic operational amplifier intended for general-purpose applications. Operation is completely specified over the range of voltages commonly used
for these devices. The design, in addition to providing high
gain, minimizes both offset voltage and bias currents. Further, the class-B output stage gives a large output capability
with minimum power drain.
e
Connection Diagrams
External components are used to frequency compensate
the amplifier. Although the unity-gain compensation network
specified will make the amplifier unconditionally stable in all
feedback configurations, compensation can be tailored to
optimize high-frequency performance for any gain setting.
The LM709C is the commercial-industrial version of the
LM709. It is identical to the LM709 except that it is specified
for operation from 0§ C to a 70§ C.
Dual-In-Line Package
bs
ol
et
Metal Can Package
TL/H/11477 – 6
Order Number LM709CN-8
See NS Package Number N08E
TL/H/11477 – 4
Dual-In-Line Package
O
Order Number LM709AH, LM709H or LM709CH
See NS Package Number H08C
C1995 National Semiconductor Corporation
TL/H/11477
TL/H/11477 – 5
Order Number LM709CN
See NS Package Number N14A
RRD-B30M115/Printed in U. S. A.
LM709 Operational Amplifier
February 1995
Absolute Maximum Ratings (Note 3)
Storage Temperature Range
LM709/LM709A/LM709C
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage
LM709/LM709A/LM709C
b 65§ C to a 150§ C
Lead Temperature (Soldering, 10 sec.)
LM709/LM709A/LM709C
300§ C
g 18V
Power Dissipation (Note 1)
LM709/LM709A
LM709C
Differential Input Voltage
LM709/LM709A/LM709C
Operating Ratings (Note 3)
Junction Temperature Range (Note 1)
b 55§ C to a 150§ C
LM709/LM709A
LM709C
0§ C to a 100§ C
Thermal Resistance (iJA)
H Package
150§ C/W, (iJC) 45§ C/W
8-Pin N Package
134§ C/W
14-Pin N Package
109§ C/W
300 mW
250 mW
g 5V
Input Voltage
LM709/LM709A/LM709C
g 10V
Output Short-Circuit Duration (TA e a 25§ C)
LM709/LM709A/LM709C
5 seconds
Electrical Characteristics (Note 2)
LM709A
Conditions
Min
Typ
LM709
Max
TA e 25§ C, RS s 10 kX
0.6
2.0
Input Bias Current
TA e 25§ C
100
200
10
50
Input Offset Current
TA e 25§ C
Input Resistance
TA e 25§ C
Output Resistance
TA e 25§ C
Supply Current
TA e 25§ C, VS e g 15V
Transient Response
Risetime
Overshoot
VIN e 20 mV, CL s 100 pF
TA e 25§ C
Slew Rate
TA e 25§ C
LM709C
Max
Min
350
700
150
150
2.5
1.0
5.0
2.0
7.5
mV
500
300
1500
nA
50
200
100
500
400
50
150
Output Voltage Swing
e
e
e
e
25§ C to TMAX
25§ C to TMIN
25§ C to TMAX
25§ C to TMIN
VS e g 15V, RL t 2 kX
VOUT e g 10V
VS e g 15V, RL e 10 kX
VS e g 15V, RL e 2 kX
VS e g 15V
Common-Mode
Rejection Ratio
RS s 10 kX
O
Input Voltage Range
1.8
1.8
2.0
4.8
25
250
150
nA
kX
X
2.6
5.5
2.6
6.6
mA
1.5
30
0.3
10
1.0
30
0.3
10
1.0
30
ms
%
0.25
3.0
TA
TA
TA
TA
Units
Max
3.6
0.25
RS s 10 kX
Average Temperature RS e 50X
Coefficient of
Input Offset Voltage
RS e 10 kX
Typ
200
bs
ol
Input Offset Voltage
Large Signal
Voltage Gain
Typ
et
Input Offset Voltage
Min
e
Parameter
10
10
15
25
70
0.25
6.0
3.0
6.0
25
45
70
V/ms
10
6.0
12
15
45
mV
mV/§ C
V/mV
g 12
g 14
g 12
g 14
g 12
g 14
g 10
g 13
g 10
g 13
g 10
g 13
g8
g 10
g8
g 10
V
70
90
65
90
dB
g8
80
110
V
Supply Voltage
Rejection Ratio
RS s 10 kX
40
100
25
150
25
200
mV/V
Input Offset Current
TA e TMAX
TA e TMIN
3.5
40
50
250
20
100
200
500
75
125
400
750
nA
Input Bias Current
TA e TMIN
0.3
0.6
0.5
1.5
0.36
2.0
mA
Input Resistance
TA e TMIN
85
170
40
100
50
250
kX
Note 1: For operating at elevated temperatures, the device must be derated based on a 150§ C maximum junction temperature for LM709/LM709A and 100§ C
maximum for L709C. For operating at elevated temperatures, the device must be derated based on thermal resistance iJA, TJ(MAX) and TA.
Note 2: These specifications apply for b 55§ C s TA s a 125§ C for the LM709/LM709A and 0§ C s TA s a 70§ C for the LM709C with the following conditions:
g 9V s VS s g 15V, C1 e 5000 pF, R1 e 1.5 kX, C2 e 200 pF and R2 e 51X.
Note 3: Absolute Maximum Ratings indicate limits which if exceeded may result in damage. Operating Ratings are conditions where the device is expected to be
functional but not necessarily within the guaranteed performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
2
et
e
Schematic Diagram**
TL/H/11477 – 1
Typical Applications**
FET Operational Amplifier
bs
ol
Unity Gain Inverting Amplifier
TL/H/11477 – 3
TL/H/11477 – 2
Offset Balancing Circuit
O
Voltage Follower
*To be used with any capacitive loading on output.
TL/H/11477 – 7
**Pin connections shown are for metal can package.
TL/H/11477 – 8
² Should be equal to DC source resistance on input.
3
Guaranteed Performance Characteristics
Input Common-Mode
Voltage Range
O
bs
ol
et
Supply Current
Voltage Gain
e
Output Voltage Swing
4
TL/H/11477 – 9
Typical Performance Characteristics
Input Bias Current
Supply Current
Slew Rate as a Function of
Closed-Loop Gain Using
Recommended Compensation Networks
Frequency Response for
Various Closed-Loop Gains
Output Voltage Swing
as a Function of Frequency
bs
ol
et
e
Input Offset Current
Input Bias Current
as a Function of
Supply Voltage
O
Output Voltage Swing
5
TL/H/11477 – 10
6
e
et
bs
ol
O
et
e
Physical Dimensions inches (millimeters)
O
bs
ol
Metal Can Package (H)
Order Number LM709AH, LM709H or LM709CH
NS Package Number H08C
8-Lead Molded Dual-In-Line Package (N)
Order Number LM709CN-8
NS Package Number N08E
7
et
e
LM709 Operational Amplifier
Physical Dimensions inches (millimeters) (Continued)
bs
ol
14-Lead Molded Dual-In-Line Package (N)
Order Number LM709CN
NS Package Number N14A
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O
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