LM95010EVAL

LM95010 www.ti.com SNIS133D – SEPTEMBER 2003 – REVISED MARCH 2013 LM95010 Digital Temperature Sensor with SensorPath™ Bus Check for Samples: LM95010 FEATURES 1 • 23 • • SensorPath Bus – 4 Hardware Programmable Addresses Temperature Sensing – 0.25 °C Resolution – 127.75 °C Maximum Temperature Reading 8-Lead VSSOP Package APPLICATIONS • • Microprocessor Based Equipment – (Motherboards, Base-stations, Routers, ATMs, Point of Sale, …) Power Supplies KEY SPECIFICATIONS • • • Temperature Sensor Accuracy ±2°C (max) Temperature Range −20 to +125°C Power Supply Voltage +3.0 to +3.6 V • • Power Supply Current 0.5 mA (typ) Conversion Time 14 to 1456 ms DESCRIPTION The LM95010 is a digital output temperature sensor that has single-wire interface compatible with the SensorPath interface. It uses a ΔVbe analog temperature sensing technique that generates a differential voltage that is proportional to temperature. This voltage is digitized using a Sigma-Delta analogto-digital converter. The LM95010 is part of a hardware monitor system, comprised of two parts: the PC System Health Controller (Master), such as a Super I/O, and up to seven slaves of which four can be LM95010s. Using SensorPath, the LM95010 will be controlled by the master and report to the master its own die temperature. SensorPath data is pulse width encoded, thereby allowing the LM95010 to be easily connected to many general purpose microcontrollers. Block Diagram LM95010 ADDRESS POINTER REGISTER SensorPath BUS SWD MANUFACTURER ID REGISTER DEVICE NUMBER ADD0 ADD1 V+ (Power) REVISION AND DEVICE ID REGISTER +3.3V_SBY DEVICE CONTROL REGISTER GND CAPABILITIES FIXED REGISTER DEVICE STATUS REGISTER TEMPERATURE CONTROL REGISTER TEMPERATURE CAPABILITIES REGISTER TEMPERATURE DATA READOUT REGISTER THERMAL DIODE SIGNAL CONDITIONING 6' ADC CONVERSION RATE REGISTER BANDGAP REFERENCE 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. SensorPath is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2003–2013, Texas Instruments Incorporated LM95010 SNIS133D – SEPTEMBER 2003 – REVISED MARCH 2013 www.ti.com Connection Diagram V+/ 3.3V_SBY 1 NC 2 8 SWD 7 ADD1 LM95010 NC 3 6 ADD0 NC 4 5 GND Figure 1. 8-Lead VSSOP See DGK Package PIN DESCRIPTION Pin Number Pin Name Type Description Typical Connection 1 V+/3.3V SB Power Positive power supply pin +3.3V pin. Should be powered by +3.3V Standby power. This pin should be bypassed with a 0.1 µF capacitor. A bulk capacitance of approximately 10 µF needs to be in the near vicinity of the LM95010. Ground System ground 2-4 NC 5 GND Power Must be grounded. 6 ADD0 Input Address select input that assigns the serial bus device number 10kΩ resistor to V+ or GND; must never be left floating 7 ADD1 Input Address select input that assigns the serial bus device number 10kΩ resistor to V+ or GND; must never be left floating 8 SWD Input/ Output Single-wire Data, SensorPath serial interface line; Open-drain output Super I/O with 1.25kΩ pull-up to 3.3V Typical Application +3.3V Standby R1** C1* 100 pF C2 0.1 PF 1 V+ 2 NC 3 NC 4 NC 8 SWD 7 ADD1 6 ADD0 5 GND SWD Super I/O LM95010 * Note, place close to LM30 pins. **Note, R1 may be required for lower power dissipation and depends on bus capacitance. Figure 2. LM95010 connection to SensorPath master such as a Super I/O. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2003–2013, Texas Instruments Incorporated Product Folder Links: LM95010 LM95010 www.ti.com SNIS133D – SEPTEMBER 2003 – REVISED MARCH 2013 Absolute Maximum Ratings (1) (2) Supply Voltage (V+) −0.5 V to 6.0 V −0.3 V to (V+ + 0.3 V) Voltage on Pin 2 −0.5 V to 6.0 V Voltage on all other Pins Input Current per Pin (3) Package Input Current 5 mA (3) 30 mA (4) Package Power Dissipation Output Sink Current 10 mA −65 °C to +150 °C Storage Temperature ESD Susceptibility (5) Human Body Model 2000 V Machine Model 200 V Soldering Information, Lead Temperature VSSOP Package (1) (2) (3) (4) (5) (6) (6) Vapor Phase (60 seconds) 215 °C Infrared (15 seconds) 220 °C All voltages are measured with respect to GND, unless otherwise noted. Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. When the input voltage (VIN) at any pin exceeds the power supplies (VIN < GND or VIN > V+), the current at that pin should be limited to 5 mA. Parasitic components and/or ESD protection circuitry are shown below for the LM95010's pins. The nominal breakdown voltage of D3 is 6.5 V. SNP stands for snap-back device. Devices that are connected to a particular pin are marked with a "✓" in Table 1. Thermal resistance junction-to-ambient when attached to a printed circuit board with 2 oz. foil is 210 °C/W. Human body model, 100 pF discharged through a 1.5 kΩ resistor. Machine model, 200 pF discharged directly into each pin. See Figure 3 for the ESD Protection Input Structure. See the URL “http://www.ti.com/packaging/” for other recommendations and methods of soldering surface mount devices. Submit Documentation Feedback Copyright © 2003–2013, Texas Instruments Incorporated Product Folder Links: LM95010 3 LM95010 SNIS133D – SEPTEMBER 2003 – REVISED MARCH 2013 Operating Ratings www.ti.com (1) (2) TMIN ≤ TA ≤ TMAX Temperature Range for Electrical Characteristics −20 °C ≤ TA ≤ +125 °C LM95010CIMM −20 °C ≤ TA ≤ +125 °C Operating Temperature Range Supply Voltage Range (V+) (1) (2) +3.0 V to +3.6 V Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. All voltages are measured with respect to GND, unless otherwise noted. DC Electrical Characteristics The following specifications apply for V+ = 3.0 VDC to 3.6 VDC, unless otherwise specified in the conditions. Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = +25 °C. POWER SUPPLY CHARACTERISTICS Symbol V+ I+AVG I+Peak Parameter Conditions Typical Power Supply Voltage Average Power Supply Current Peak Power Supply Current (1) Limits (2) Units (Limit) 3.3 3.0 3.6 V (min) V (max) 750 µA (max) 1.6 V (min) 2.8 V (max) ±3 °C (max) ±2 °C (max) SensorPath Bus Inactive (3) 500 SensorPath Bus Inactive (3) 1.6 Power-On Reset Threshold Voltage mA TEMPERATURE-TO-DIGITAL CONVERTER CHARACTERISTICS TA = −20 °C and +125 °C Temperature Error +25 °C ≤ TA ≤ +60 °C (4) ±1 (4) Temperature Resolution 10 Bits 0.25 °C SWD and ADD DIGITAL INPUT CHARACTERISTICS VIH SWD Logical High Input Voltage VIL SWD Logical Low Input Voltage TA = 0 °C to +85 °C 2.1 V (min) V+ + 0.5 V (max) 0.8 V (max) -0.5 V (min) -0.3 V (min) VIH ADD Logical High Input Voltage 90% x V+ V (min) VIL ADD Logical Low Input Voltage 10% x V+ V (max) ±10 µA (max) VHYST IL CIN SWD Input Hysteresis 300 mV SWD and ADD Input Leakage Current GND ≤VIN ≤ V+ ±0.005 SWD Input Leakage Current with V+ Open or Grounded GND ≤VIN ≤ 3.6 V, and V+ Open or GND ±0.005 µA 10 pF Digital Input Capacitance SWD DIGITAL OUTPUT CHARACTERISTICS VOL Open-drain Output Logic “Low” Voltage IOH Open-drain Output Off Current IOL = 4 mA 0.4 IOL = 50 µA COUT (1) (2) (3) (4) 4 ±0.005 Digital Output Capacitance 10 V (max) 0.2 V (max) ±10 µA (max) pF “Typicals” are at TA = 25 °C and represent most likely parametric norm. They are to be used as general reference values not for critical design calculations. Limits are specified to TI's AOQL (Average Outgoing Quality Level). The supply current will not increase substantially with SensorPath transactions. Temperature accuracy does not include the effects of self-heating. The rise in temperature due to self-heating is the product of the internal power dissipation of the LM95010 and the thermal resistance. See Note 4 in Absolute Maximum Ratings table for thermal resistance to be used in the self-heating calculation. Submit Documentation Feedback Copyright © 2003–2013, Texas Instruments Incorporated Product Folder Links: LM95010 LM95010 www.ti.com SNIS133D – SEPTEMBER 2003 – REVISED MARCH 2013 AC Electrical Characteristics The following specification apply for V+ = +3.0VDC to +3.6VDC, unless otherwise specified. Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25 °C. The SensorPath Characteristics conform to the SensorPath specification. Please refer to that specification for further details. HARDWARE MONITOR CHARACTERISTICS Symbol Parameter tCONV Conditions Total Monitoring Cycle Time (3) Typical Default (1) 182 (2) Limits Units (Limits) 163.8 ms (min) 200.2 ms (max) Rpull-up= 1.25 kΩ ±30%, CL= 400 pF 300 ns (max) Rpull-up= 1.25 kΩ±30%, CL= 400 pF SensorPath Bus CHARACTERISTICS tf SWD fall time tr SWD rise time 1000 ns (max) Minimum inactive time (bus at high level) ensured by the LM95010 before an Attention Request 11 µs (min) tMtr0 Master drive for Data Bit 0 write and for Data Bit 0-1 read 11.8 µs (min) 17.0 µs (max) Master drive for Data Bit 1 write 35.4 µs (min) 48.9 µs (max) tSFEdet Time allowed for LM95010 activity detection 9.6 µs (max) tSLout1 LM95010 drive for Data Bit 1 read by master 28.3 µs (min) 38.3 µs (max) tMtrS Master drive for Start Bit tSLoutA tRST tRST_MAX (2) (3) (4) (5) (5) tINACT tMtr1 (1) (4) 80 µs (min) 109 µs (max) LM95010 drive for Attention Request 165 µs (min) 228 µs (max) Master or LM95010 drive for Reset 354 µs (min) Maximum drive of SWD by an LM95010, after the power supply is raised above 3V 500 ms (max) “Typicals” are at TA = 25 °C and represent most likely parametric norm. They are to be used as general reference values not for critical design calculations. Limits are specified to TI's AOQL (Average Outgoing Quality Level). This specification is provided only to indicate how often temperature data is updated once enabled. The output fall time is measured from VIH min to VIL max. The output fall time is ensured by design. The output rise time is measured from VIL max to VIH min. The output rise time is ensured by design. Table 1. Pin Name PIN # D1 D2 D3 ✓ ✓ ✓ D4 D5 R1 ✓ ✓ ✓ SNP ESD CLAMP ✓ ✓ V+/3.3V SB 1 NC 2 NC 3 NC 4 ✓ ✓ ✓ ✓ ✓ ADD0 6 ✓ ✓ ✓ ✓ ✓ ADD1 7 ✓ ✓ SWD 8 ✓ ✓ ✓ ✓ ✓ ✓ ✓ Submit Documentation Feedback Copyright © 2003–2013, Texas Instruments Incorporated Product Folder Links: LM95010 5 LM95010 SNIS133D – SEPTEMBER 2003 – REVISED MARCH 2013 www.ti.com V+ D1 D3 D4 R1 I/O D2 SNP ESD Clamp D5 GND Devices that are connected to a particular pin are marked with a "✓" in the table above. Figure 3. ESD Protection Input Structure 0 Ps 50 Ps 100 Ps tINACT tMtr0 Master Write 0 **SlvDetectData1 tINACT tMtr1 Master Write 1 tINACT tMtr0 Mout_Mrd_0 **SlvDetect_st Sout_Mrd_0 tSFEdet Master Read 0 tINACT tMtr0 Mout_Mrd_1 **SlvDetect_st Sout_Mrd_1 tSFEdet **MstDetect_1 Master Read 1 DetctStart DetctStart tINACT DetctStart tMtrS Master Write Start See SensorPath BIT SIGNALING for further details. Figure 4. Timing for Data Bits 0, 1 and Start Bit 6 Submit Documentation Feedback Copyright © 2003–2013, Texas Instruments Incorporated Product Folder Links: LM95010 LM95010 www.ti.com SNIS133D – SEPTEMBER 2003 – REVISED MARCH 2013 0 Ps 50 Ps 100 Ps 200 Ps 300 Ps 400 Ps Master Write 0 Master Write 1 Master Read 0 Master Read 1 tINACT tMtrS Master Write Start tINACT tMtr0 Mout_ Attention tINACT tSLoutA Sout_ Attention Attention Detect tINACT Attention tRST Mout_ Reset tRST Sout_R eset tRST Reset Detect Reset See SensorPath BIT SIGNALING for further details. Figure 5. Timing for Attention Request and Reset Submit Documentation Feedback Copyright © 2003–2013, Texas Instruments Incorporated Product Folder Links: LM95010 7 LM95010 SNIS133D – SEPTEMBER 2003 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics Conversion Rate Effect on Power Supply Current 2.00 POWER SUPPLY CURRENT (mA) 1.75 Peak Current 1.50 1.25 1.00 0.75 Average Current 0.50 0.25 0 10 ms 100 ms 1s 10s CONVERSION TIME Figure 6. FUNCTIONAL DESCRIPTION The LM95010 is based on a ΔVbe temperature sensing method. A differential voltage, representing temperature, is digitized using a Sigma-Delta analog to digital converter. The digital temperature data can be retrieved over a simple single-wire interface called SensorPath. SensorPath is optimized for hardware monitoring. TI offers a royalty-free license in connection with its intellectual property rights in the SensorPath bus. The LM95010 has 2 address pins that allow up to 4 LM95010s to be connected to one SensorPath bus. The physical interface of SensorPath's SWD signal is identical to the familiar industry standard SMBus SMBDAT signal. The digital information is encoded in the pulse width of the signal being transmitted. Every bit can be synchronized by the master simplifying the implementation of the master when implemented with a microcontroller. For microcontroller's with greater functionality an asynchronous attention signal can be transmitted by the LM95010 to interrupt the microcontroller and notify it that temperature data has been updated in the readout register. To optimize the LM95010's power consumption to the system requirements, the LM95010 has a shutdown mode as well as it supports multiple conversion rates. SensorPath BUS SWD SWD is the Single Wire Data line used for communication. SensorPath uses 3.3V single-ended signaling, with a pull-up resistor and open-drain low-side drive (see Figure 7). For timing purposes SensorPath is designed for capacitive loads (CL) of up to 400pF. Note that in many cases a 3.3V standby rail of the PC will be used as a power supply for both the sensor and the master. Logic high and low voltage levels for SWD are TTL compatible. The master may provide an internal pull-up resistor. In this case the external resistor is not needed. The minimum value of the pull-up resistor must take into account the maximum allowable output load current of 4mA. V+ RI 1.25k Option SWD V+ RE >1.25k Option LM95010 SWD CL