LMC6061
www.ti.com
SNOS648D – NOVEMBER 1994 – REVISED MARCH 2013
PRECISION CMOS SINGLE MICROPOWER OPERATIONAL AMPLIFIER
Check for Samples: LMC6061
FEATURES
1
(Typical Unless Otherwise Noted)
2
•
•
•
•
•
•
•
•
Low Offset Voltage: 100 µV
Ultra Low Supply Current: 20 μA
Operates From 4.5V to 15V Single Supply
Ultra Low Input Bias Current: 10 fA
Output Swing Within 10 mV of Supply Rail,
100k Load
Input Common-mode Range Includes V−
High Voltage Gain: 140 dB
Improved Latchup Immunity
APPLICATIONS
•
•
•
•
•
•
•
Instrumentation Amplifier
Photodiode and Infrared Detector Preamplifier
Transducer Amplifiers
Hand-held Analytic Instruments
Medical Instrumentation
D/A Converter
Charge Amplifier for Piezoelectric Transducers
DESCRIPTION
The LMC6061 is a precision single low offset voltage,
micropower operational amplifier, capable of
precision single supply operation. Performance
characteristics include ultra low input bias current,
high voltage gain, rail-to-rail output swing, and an
input common mode voltage range that includes
ground. These features, plus its low power
consumption, make the LMC6061 ideally suited for
battery powered applications.
Other applications using the LMC6061 include
precision full-wave rectifiers, integrators, references,
sample-and-hold circuits, and true instrumentation
amplifiers.
This device is built with TI's advanced double-Poly
Silicon-Gate CMOS process.
For designs that require higher speed, see the
LMC6081 precision single operational amplifier.
For a dual or quad operational amplifier with similar
features, see the LMC6062 or LMC6064 respectively.
PATENT PENDING
Connection Diagrams
Figure 1. 8-Pin PDIP/SOIC
Top View
Figure 2. Distribution of LMC6061 Input Offset
Voltage (TA = +25°C)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1994–2013, Texas Instruments Incorporated
LMC6061
SNOS648D – NOVEMBER 1994 – REVISED MARCH 2013
www.ti.com
Absolute Maximum Ratings (1) (2) (3)
Differential Input Voltage
±Supply Voltage
(V+) +0.3V,
Voltage at Input/Output Pin
(V−) −0.3V
Supply Voltage (V+ − V−)
16V
+
See (4)
−
See (5)
Output Short Circuit to V
Output Short Circuit to V
Lead Temperature (Soldering, 10 sec.)
Storage Temp. Range
−65°C to +150°C
Junction Temperature
150°C
ESD Tolerance (6)
2 kV
Current at Input Pin
±10 mA
Current at Output Pin
±30 mA
Current at Power Supply Pin
40 mA
Power Dissipation
See (7)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
For specified Military Temperature Range parameters see RETSMC6061X.
Do not connect output to V+, when V+ is greater than 13V or reliability witll be adversely affected.
Applies to both single-supply and split-supply operation. Continous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of ±30 mA over long term may adversely
affect reliability.
Human body model, 1.5 kΩ in series with 100 pF.
The maximum power dissipation is a function of TJ(Max), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(Max) − TA)/θJA.
Operating Ratings (1)
Temperature Range
−55°C ≤ TJ ≤ +125°C
LMC6061AM
LMC6061AI, LMC6082I
4.5V ≤ V+ ≤ 15.5V
Supply Voltage
Thermal Resistance (θJA)
(2)
P0008E Package, 8-Pin PDIP
115°C/W
D0008A Package, 8-Pin SOIC
193°C/W
See (3)
Power Dissipation
(1)
(2)
(3)
2
−40°C ≤ TJ ≤ +85°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
All numbers apply for packages soldered directly into a PC board.
For operating at elevated temperatures the device must be derated based on the thermal resistance θJA with PD = (TJ–TA)/θJA.
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DC Electrical Characteristics
Unless otherwise specified, all limits ensured for TJ = 25°C. Boldface limits apply at the temperature extremes. V+ = 5V, V− =
0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
Symbol
VOS
Parameter
Conditions
Input Offset Voltage
TCVOS
Input Offset Voltage
Average Drift
IB
Input Bias Current
Typ (1)
LMC6061AM
LMC6061AI
LMC6061I
Limit (2)
Limit (2)
Limit (2)
350
350
800
μV
1200
900
1300
Max
100
μV/°C
1.0
0.010
pA
100
IOS
Input Offset Current
RIN
Input Resistance
CMRR
Common Mode Rejection
Ratio
0V ≤ VCM ≤ 12.0V
V+ = 15V
85
+PSRR
Positive Power Supply
Rejection Ratio
5V ≤ V+ ≤ 15V
VO = 2.5V
85
−PSRR
Negative Power Supply
Rejection Ratio
0V ≤ V− ≤ −10V
VCM
Input Common-Mode
Voltage Range
V+ = 5V and 15V
for CMRR ≥ 60 dB
4
Max
pA
2
2
75
75
66
dB
70
72
63
Min
75
75
66
dB
70
72
63
Min
100
84
84
74
dB
70
81
71
Min
−0.4
−0.1
−0.1
−0.1
V
0
0
0
Max
V+ − 2.3
V+ − 2.3
V+ − 2.3
V
+
Large Signal Voltage Gain RL = 100 kΩ (3)
RL = 25 kΩ (3)
Max
Tera Ω
>10
V+ − 1.9
(1)
(2)
(3)
4
0.005
100
AV
Units
+
V − 2.6
V − 2.5
V+ − 2.5
Min
400
400
300
V/mV
Sourcing
4000
200
300
200
Min
Sinking
3000
180
180
90
V/mV
70
100
60
Min
Sourcing
3000
400
400
200
V/mV
150
150
80
Min
Sinking
2000
100
100
70
V/mV
35
50
35
Min
For operating at elevated temperatures the device must be derated based on the thermal resistance θJA with PD = (TJ–TA)/θJA
All limits are specified by testing or statistical analysis.
V+ = 15V, VCM = 7.5V and RL connected to 7.5V. For Sourcing tests, 7.5V ≤ VO ≤ 11.5V. For Sinking tests, 2.5V ≤ VO ≤ 7.5V.
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DC Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for TJ = 25°C. Boldface limits apply at the temperature extremes. V+ = 5V, V− =
0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
Symbol
VO
Output Swing
LMC6061AM
LMC6061AI
LMC6061I
Limit (2)
Limit (2)
Limit (2)
4.990
4.990
4.950
V
4.970
4.980
4.925
Min
0.010
0.010
0.050
V
0.030
0.020
0.075
Max
4.975
4.975
4.950
V
4.955
4.965
4.850
Min
0.010
0.020
0.020
0.050
V
0.045
0.035
0.150
Max
14.990
14.975
14.975
14.950
V
14.955
14.965
14.925
Min
0.025
0.025
0.050
V
0.050
0.035
0.075
Max
14.900
14.900
14.850
V
14.800
14.850
14.800
Min
0.050
0.050
0.100
V
0.200
0.150
0.200
Max
13
mA
Min
Conditions
Typ (1)
V+ = 5V
RL = 100 kΩ to 2.5V
4.995
Parameter
0.005
V+ = 5V
RL = 25 kΩ to 2.5V
V+ = 15V
RL = 100 kΩ to 7.5V
4.990
0.010
V+ = 15V
RL = 25 kΩ to 7.5V
14.965
0.025
IO
Output Current
V+ = 5V
IO
Output Current
V+ = 15V
Sourcing, VO = 0V
22
16
16
8
10
8
Sinking, VO = 5V
21
16
16
16
mA
7
8
8
Min
15
15
15
mA
9
10
10
Min
20
20
20
mA
7
8
8
Min
24
24
32
μA
35
32
40
Max
30
30
40
μA
40
38
48
Max
Sourcing, VO = 0V
Sinking, VO = 13V (4)
IS
V+ = +5V, VO = 1.5V
Supply Current
V+ = +15V, VO = 7.5V
(4)
+
Units
25
26
20
24
+
Do not connect output to V , when V is greater than 13V or reliability witll be adversely affected.
AC Electrical Characteristics
Unless otherwise specified, all limits ensured for TJ = 25°C, Boldface limits apply at the temperature extremes. V+ = 5V, V− =
0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
Symbol
SR
Parameter
Slew Rate
Conditions
See (3)
Typ (1)
35
Limit
(2)
LMC6061AI
Limit
(2)
LMC6061I
Limit (2)
20
20
15
8
10
7
Units
V/ms
Min
GBW
Gain-Bandwidth Product
θm
Phase Margin
50
Deg
en
Input-Referred Voltage Noise
F = 1 kHz
83
nV/√Hz
in
Input-Referred Current Noise
F = 1 kHz
0.0002
pA/√Hz
(1)
(2)
(3)
4
100
LMC6061AM
kHz
Typical values represent the most likely parametric norm.
All limits are specified by testing or statistical analysis.
V+ = 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
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AC Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for TJ = 25°C, Boldface limits apply at the temperature extremes. V+ = 5V, V− =
0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.
Symbol
T.H.D.
Parameter
Total Harmonic Distortion
Conditions
F = 1 kHz, AV = −5
RL = 100 kΩ, VO = 2 VPP
±5V Supply
Typ (1)
LMC6061AM
LMC6061AI
LMC6061I
Limit (2)
Limit (2)
Limit (2)
Units
0.01
%
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Typical Performance Characteristics
VS = ±7.5V, TA = 25°C, Unless otherwise specified
6
Distribution of LMC6061
Input Offset Voltage
(TA = +25°C)
Distribution of LMC6061
Input Offset Voltage
(TA = −55°C)
Figure 3.
Figure 4.
Distribution of LMC6061
Input Offset Voltage
(TA = +125°C)
Input Bias Current
vs Temperature
Figure 5.
Figure 6.
Supply Current
vs Supply Voltage
Input Voltage
vs Output Voltage
Figure 7.
Figure 8.
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Typical Performance Characteristics (continued)
VS = ±7.5V, TA = 25°C, Unless otherwise specified
Common Mode
Rejection Ratio
vs Frequency
Power Supply Rejection
Ratio
vs
Frequency
Figure 9.
Figure 10.
Input Voltage Noise
vs Frequency
Output Characteristics
Sourcing Current
Figure 11.
Figure 12.
Output Characteristics
Sinking Current
Gain and Phase Response
vs Temperature
(−55°C to +125°C)
Figure 13.
Figure 14.
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Typical Performance Characteristics (continued)
VS = ±7.5V, TA = 25°C, Unless otherwise specified
8
Gain and Phase
Response
vs
Capacitive Load
with RL = 20 kΩ
Gain and Phase
Response
vs
Capacitive Load
with RL = 500 kΩ
Figure 15.
Figure 16.
Open Loop
Frequency Response
Inverting Small Signal
Pulse Response
Figure 17.
Figure 18.
Inverting Large Signal
Pulse Response
Non-Inverting Small
Signal Pulse Response
Figure 19.
Figure 20.
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Typical Performance Characteristics (continued)
VS = ±7.5V, TA = 25°C, Unless otherwise specified
Non-Inverting Large
Signal Pulse Response
Stability
vs
Capacitive
Load, RL = 20 kΩ
Figure 21.
Figure 22.
Stability
vs
Capacitive
Load RL = 1 MΩ
Figure 23.
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APPLICATIONS HINTS
Amplifier Topology
The LMC6061 incorporates a novel op-amp design topology that enables it to maintain rail-to-rail output swing
even when driving a large load. Instead of relying on a push-pull unity gain output buffer stage, the output stage
is taken directly from the internal integrator, which provides both low output impedance and large gain. Special
feed-forward compensation design techniques are incorporated to maintain stability over a wider range of
operating conditions than traditional micropower op-amps. These features make the LMC6061 both easier to
design with, and provide higher speed than products typically found in this ultra-low power class.
Compensating for Input Capacitance
It is quite common to use large values of feedback resistance for amplifiers with ultra-low input current, like the
LMC6061.
Although the LMC6061 is highly stable over a wide range of operating conditions, certain precautions must be
met to achieve the desired pulse response when a large feedback resistor is used. Large feedback resistors and
even small values of input capacitance, due to transducers, photodiodes, and circuit board parasitics, reduce
phase margins.
When high input impedances are demanded, guarding of the LMC6061 is suggested. Guarding input lines will
not only reduce leakage, but lowers stray input capacitance as well. (See Printed-Circuit-Board Layout For HighImpedance Work).
The effect of input capacitance can be compensated for by adding a capacitor. Place a capacitor, Cf, around the
feedback resistor (as in Figure 24) such that:
(1)
or
R1 CIN ≤ R2 Cf
(2)
Since it is often difficult to know the exact value of CIN, Cf can be experimentally adjusted so that the desired
pulse response is achieved. Refer to the LMC660 and the LMC662 for a more detailed discussion on
compensating for input capacitance.
Figure 24. Canceling the Effect of Input Capacitance
Capacitive Load Tolerance
All rail-to-rail output swing operational amplifiers have voltage gain in the output stage. A compensation capacitor
is normally included in this integrator stage. The frequency location of the dominate pole is affected by the
resistive load on the amplifier. Capacitive load driving capability can be optimized by using an appropriate
resistive load in parallel with the capacitive load (see typical curves).
Direct capacitive loading will reduce the phase margin of many op-amps. A pole in the feedback loop is created
by the combination of the op-amp's output impedance and the capacitive load. This pole induces phase lag at the
unity-gain crossover frequency of the amplifier resulting in either an oscillatory or underdamped pulse response.
With a few external components, op amps can easily indirectly drive capacitive loads, as shown in Figure 25.
10
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Figure 25. LMC6061 Noninverting Gain of 10 Amplifier, Compensated to Handle Capacitive Loads
In the circuit of Figure 25, R1 and C1 serve to counteract the loss of phase margin by feeding the high frequency
component of the output signal back to the amplifier's inverting input, thereby preserving phase margin in the
overall feedback loop.
Capacitive load driving capability is enhanced by using a pull up resistor to V+ Figure 26. Typically a pull up
resistor conducting 10 μA or more will significantly improve capacitive load responses. The value of the pull up
resistor must be determined based on the current sinking capability of the amplifier with respect to the desired
output swing. Open loop gain of the amplifier can also be affected by the pull up resistor (see electrical
characteristics).
Figure 26. Compensating for Large Capacitive Loads with a Pull Up Resistor
Printed-Circuit-Board Layout for High-Impedance Work
It is generally recognized that any circuit which must operate with less than 1000 pA of leakage current requires
special layout of the PC board. When one wishes to take advantage of the ultra-low bias current of the
LMC6061, typically less than 10 fA, it is essential to have an excellent layout. Fortunately, the techniques of
obtaining low leakages are quite simple. First, the user must not ignore the surface leakage of the PC board,
even though it may sometimes appear acceptably low, because under conditions of high humidity or dust or
contamination, the surface leakage will be appreciable.
To minimize the effect of any surface leakage, lay out a ring of foil completely surrounding the LMC6061's inputs
and the terminals of capacitors, diodes, conductors, resistors, relay terminals etc. connected to the op-amp's
inputs, as in Figure 27. To have a significant effect, guard rings should be placed on both the top and bottom of
the PC board. This PC foil must then be connected to a voltage which is at the same voltage as the amplifier
inputs, since no leakage current can flow between two points at the same potential. For example, a PC board
trace-to-pad resistance of 1012Ω, which is normally considered a very large resistance, could leak 5 pA if the
trace were a 5V bus adjacent to the pad of the input. This would cause a 100 times degradation from the
LMC6061's actual performance. However, if a guard ring is held within 5 mV of the inputs, then even a
resistance of 1011Ω would cause only 0.05 pA of leakage current. See Figure 28 for typical connections of guard
rings for standard op-amp configurations..
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Figure 27. Example of Guard Ring in P.C. Board Layout
Inverting Amplifier
Non-Inverting Amplifier
Follower
Figure 28. Typical Connections of Guard Rings
The designer should be aware that when it is inappropriate to lay out a PC board for the sake of just a few
circuits, there is another technique which is even better than a guard ring on a PC board: Don't insert the
amplifier's input pin into the board at all, but bend it up in the air and use only air as an insulator. Air is an
excellent insulator. In this case you may have to forego some of the advantages of PC board construction, but
the advantages are sometimes well worth the effort of using point-to-point up-in-the-air wiring. See Figure 29.
12
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(Input pins are lifted out of PC board and soldered directly to components. All other pins connected to PC board).
Figure 29. Air Wiring
Latchup
CMOS devices tend to be susceptible to latchup due to their internal parasitic SCR effects. The (I/O) input and
output pins look similar to the gate of the SCR. There is a minimum current required to trigger the SCR gate
lead. The LMC6061 and LMC6081 are designed to withstand 100 mA surge current on the I/O pins. Some
resistive method should be used to isolate any capacitance from supplying excess current to the I/O pins. In
addition, like an SCR, there is a minimum holding current for any latchup mode. Limiting current to the supply
pins will also inhibit latchup susceptibility.
Typical Single-Supply Applications
(V+ = 5.0 VDC)
The extremely high input impedance, and low power consumption, of the LMC6061 make it ideal for applications
that require battery-powered instrumentation amplifiers. Examples of these types of applications are hand-held
pH probes, analytic medical instruments, magnetic field detectors, gas detectors, and silicon based pressure
transducers.
Figure 30 shows an instrumentation amplifier that features high differential and common mode input resistance
(>1014Ω), 0.01% gain accuracy at AV = 100, excellent CMRR with 1 kΩ imbalance in bridge source resistance.
Input current is less than 100 fA and offset drift is less than 2.5 μV/°C. R2 provides a simple means of adjusting
gain over a wide range without degrading CMRR. R7 is an initial trim used to maximize CMRR without using
super precision matched resistors. For good CMRR over temperature, low drift resistors should be used.
If R1 = R5, R3 = R6, and R4 = R7; then
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∴ AV ≈ 100 for circuit shown (R2 = 9.822k).
Figure 30. Instrumentation Amplifier
Figure 31. Low-Leakage Sample and Hold
Figure 32. 1 Hz Square Wave Oscillator
14
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REVISION HISTORY
Changes from Revision C (March 2013) to Revision D
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 14
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PACKAGE OPTION ADDENDUM
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23-Sep-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
LMC6061AIM
ACTIVE
SOIC
D
8
LMC6061AIM/NOPB
ACTIVE
SOIC
D
8
LMC6061AIMX
ACTIVE
SOIC
D
LMC6061AIMX/NOPB
ACTIVE
SOIC
LMC6061IM
ACTIVE
LMC6061IM/NOPB
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
TBD
Call TI
Call TI
-40 to 85
LMC60
61AIM
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMC60
61AIM
8
2500
TBD
Call TI
Call TI
-40 to 85
LMC60
61AIM
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMC60
61AIM
SOIC
D
8
TBD
Call TI
Call TI
-40 to 85
LMC60
61IM
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMC60
61IM
LMC6061IMX
ACTIVE
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 85
LMC60
61IM
LMC6061IMX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMC60
61IM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
(4)
23-Sep-2013
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LMC6061AIMX
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LMC6061AIMX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LMC6061IMX
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LMC6061IMX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMC6061AIMX
SOIC
D
8
2500
367.0
367.0
35.0
LMC6061AIMX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LMC6061IMX
SOIC
D
8
2500
367.0
367.0
35.0
LMC6061IMX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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