LMH6639
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SNOS989G – JANUARY 2002 – REVISED MARCH 2013
LMH6639 190MHz Rail-to-Rail Output Amplifier with Disable
Check for Samples: LMH6639
FEATURES
DESCRIPTION
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The LMH6639 is a voltage feedback operational
amplifier with a rail-to-rail output drive capability of
110mA. Employing TI’s patented VIP10 process, the
LMH6639 delivers a bandwidth of 190MHz at a
current consumption of only 3.6mA. An input common
mode voltage range extending to 0.2V below the V−
and to within 1V of V+, makes the LMH6639 a true
single supply op-amp. The output voltage range
extends to within 30mV of either supply rail providing
the user with a dynamic range that is especially
desirable in low voltage applications.
1
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(VS = 5V, Typical Values Unless Specified)
Supply Current (No Load) 3.6mA
Supply Current (Off Mode) 400μA
Output Resistance (Closed Loop 1MHz) 0.186Ω
−3dB BW (AV = 1) 190MHz
Settling Time 33nsec
Input Common Mode Voltage −0.2V to 4V
Output Voltage Swing 40mV from Rails
Linear Output Current 110mA
Total Harmonic Distortion −60dBc
Fully Characterized for 3V, 5V and ±5V
No Output Phase Reversal with CMVR
Exceeded
Excellent Overdrive Recovery
Off Isolation 1MHz −70dB
Differential Gain 0.12%
Differential Phase 0.045°
The LMH6639 offers a slew rate of 172V/μs resulting
in a full power bandwidth of approximately 28MHz.
The LMH6639 also offers protection for the input
transistors by using two anti-parallel diodes and a
series resistor connected across the inputs. The TON
value of 83nsec combined with a settling time of
33nsec makes this device ideally suited for
multiplexing applications (see application note for
details). Careful attention has been paid to ensure
device stability under all operating voltages and
modes. The result is a very well behaved frequency
response characteristic for any gain setting including
+1, and excellent specifications for driving video
cables including harmonic distortion of −60dBc,
differential gain of 0.12% and differential phase of
0.045°
APPLICATIONS
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Active Filters
CD/DVD ROM
ADC Buffer Amplifier
Portable Video
Current Sense Buffer
100n
5V
+
+
INPUT
1k
V
OUT
75:
-
SD
V
-
75:
75:
VREF
1k
10n
SHUTDOWN INPUT
Figure 1. Typical Single Supply Schematic
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2002–2013, Texas Instruments Incorporated
LMH6639
SNOS989G – JANUARY 2002 – REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
2KV (3)
ESD Tolerance
200V (4)
VIN Differential
±2.5V
Input Current
±10mA
Supply Voltage (V+ – V−)
13.5V
V+ +0.8V, V− −0.8V
Voltage at Input/Output pins
−65°C to +150°C
Storage Temperature Range
Junction Temperature (5) (6)
+150°C
Soldering Information
(1)
(2)
(3)
(4)
(5)
(6)
Infrared or Convection (20 sec)
235°C
Wave Soldering (10 sec)
260°C
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
Human body model, 1.5kΩ in series with 100pF.
Machine Model, 0Ω in series with 200pF.
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
Operating Ratings (1)
Supply Voltage (V+ to V−)
Operating Temperature Range
3V to 12V
(2)
Package Thermal Resistance (θJA) (2)
(1)
(2)
−40°C to +85°C
SOT-23-6
265°C/W
SOIC-8
190°C/W
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test
conditions, see the Electrical Characteristics.
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
3V Electrical Characteristics
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 3V, V− = 0V, VO = VCM = V+/2, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
−3dB BW
BW
Conditions
AV = +1
AV = −1
Min (1)
Typ (2)
120
170
63
Max (1)
Units
MHz
BW0.1dB
0.1dB Gain Flatness
RF = 2.65kΩ , RL = 1kΩ,
16.4
MHz
FPBW
Full Power Bandwidth
AV = +1, VOUT = 2VPP, −1dB
V+ = 1.8V, V− = 1.2V
21
MHz
GBW
Gain Bandwidth product
AV = +1
83
MHz
en
Input-Referred Voltage Noise
RF = 33kΩ
in
Input-Referred Current Noise
THD
(1)
(2)
2
Total Harmonic Distortion
RF = 1MΩ
f = 10kHz
19
f = 1MHz
16
f = 10kHz
1.30
f = 1MHz
0.36
f = 5MHz, VO = 2VPP, AV = +2,
RL = 1kΩ to V+/2
−50
nV/√Hz
pA/√Hz
dBc
All limits are ensured by testing or statistical analysis.
Typical values represent the most likely parametric norm.
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3V Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 3V, V− = 0V, VO = VCM = V+/2, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
TS
Parameter
Settling Time
SR
Slew Rate
VOS
Input Offset Voltage
TC VOS
Input Offset Average Drift
Conditions
Min (1)
VO = 2VPP, ±0.1%
AV = −1
(3)
Typ (2)
Units
37
120
See (4)
ns
167
1.01
See
Max (1)
V/μs
5
7
μV/°C
8
(5)
mV
−1.02
−2.6
−3.5
μA
20
800
1000
nA
IB
Input Bias Current
IOS
Input Offset Current
RIN
Common Mode Input Resistance AV = +1, f = 1kHz, RS = 1MΩ
6.1
MΩ
CIN
Common Mode Input
Capacitance
AV = +1, RS = 100kΩ
1.35
pF
CMVR
Input Common-Mode Voltage
Range
CMRR ≥ 50dB
−0.3
1.8
1.6
Common Mode Rejection Ratio
See (6)
72
93
AVOL
Large Signal Voltage Gain
VO = 2VPP, RL = 2kΩ to V+/2
80
76
100
VO = 2VPP, RL = 150Ω to V+/2
74
70
78
RL = 2kΩ to V+/2, VID = 200mV
2.90
2.98
RL = 150Ω to V+/2, VID = 200mV
2.75
2.93
2.6
2.85
Output Swing
High
+
RL = 50Ω to V /2, VID = 200mV
Output Swing
Low
Output Short Circuit Current
V
25
75
75
200
130
300
Sourcing to V+/2 (7)
50
35
120
Sinking to V+/2 (7)
67
40
140
IOUT
Output Current
VO = 0.5V from either supply
PSRR
Power Supply Rejection Ratio
See (6)
IS
Supply Current (Enabled)
No Load
72
Supply Current (Disabled)
mV
mA
99
mA
96
dB
3.5
5.6
7.5
0.3
0.5
0.7
mA
V+−1.59
V
−13
μA
On Time After Shutdown
83
nsec
Off Time to Shutdown
160
nsec
TH_SD
Threshold Voltage for Shutdown
Mode
I_SD PIN
Shutdown Pin Input Current
TON
TOFF
ROUT
Output Resistance Closed Loop
(3)
(4)
(5)
(6)
(7)
(8)
dB
RL = 150Ω to V+/2, VID = −200mV
RL = 50Ω to V /2, VID = −200mV
ISC
dB
RL = 2kΩ to V+/2, VID = −200mV
+
V
2
CMRR
VO
−0.2
−0.1
SD Pin Connect to 0V (8)
RF = 10kΩ, f = 1kHz, AV = −1
27
RF = 10kΩ, f = 1MHz, AV = −1
266
mΩ
Slew rate is the average of the rising and falling slew rates.
Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing into the device.
f ≤ 1kHz (see typical performance Characteristics)
Short circuit test is a momentary test.
Positive current corresponds to current flowing into the device.
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5V Electrical Characteristics
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 5V, V− = 0V, VO = VCM = V+/2, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
−3dB BW
BW
Min (1)
Conditions
AV = +1
130
AV = −1
Typ
(2)
Max (1)
190
Units
MHz
64
BW0.1dB
0.1dB Gain Flatness
RF = 2.51kΩ, RL = 1kΩ,
16.4
MHz
FPBW
Full Power Bandwidth
AV = +1, VOUT = 2VPP, −1dB
28
MHz
GBW
Gain Bandwidth Product
AV = +1
86
MHz
en
Input-Referred Voltage Noise
RF = 33kΩ
in
Input-Referred Current Noise
RF = 1MΩ
f = 10kHz
19
f = 1MHz
16
f = 10KHz
1.35
f = 1MHz
0.35
nV/√Hz
pA/√Hz
THD
Total Harmonic Distortion
f = 5MHz, VO = 2VPP, AV = +2
RL = 1kΩ to V+/2
−60
dBc
DG
Differential Gain
NTSC, AV = +2
RL = 150Ω to V+/2
0.12
%
DP
Differential Phase
NTSC, AV = +2
RL = 150Ω to V+/2
0.045
deg
TS
Settling Time
VO = 2VPP, ±0.1%
SR
Slew Rate
AV = −1 (3)
VOS
Input Offset Voltage
TC VOS
Input Offset Average Drift
See (4)
8
IB
Input Bias Current
See (5)
−1.2
−2.6
−3.25
µA
IOS
Input Offset Current
20
800
1000
nA
RIN
Common Mode Input Resistance AV = +1, f = 1kHz, RS = 1MΩ
6.88
MΩ
CIN
Common Mode Input
Capacitance
AV = +1, RS = 100kΩ
1.32
pF
CMVR
Common-Mode Input Voltage
Range
CMRR ≥ 50dB
−0.3
−0.2
−0.1
4
3.8
3.6
130
33
ns
172
V/µs
1.02
CMRR
Common Mode Rejection Ratio
See (6)
72
95
AVOL
Large Signal Voltage Gain
VO = 4VPP
RL = 2kΩ to V+/2
86
82
100
VO = 3.75VPP
RL = 150Ω to V+/2
74
70
77
RL = 2kΩ to V+/2, VID = 200mV
4.90
4.97
RL = 150Ω to V+/2, VID = 200mV
4.65
4.90
RL = 50Ω to V+/2, VID = 200mV
4.40
4.77
VO
Output Swing
High
Output Swing
Low
(1)
(2)
(3)
(4)
(5)
(6)
4
RL = 2kΩ to V+/2, VID = −200mV
5
7
mV
µV/°C
V
dB
dB
V
25
100
+
RL = 150Ω to V /2, VID = −200mV
85
200
RL = 50Ω to V+/2, VID = −200mV
190
400
mV
All limits are ensured by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Slew rate is the average of the rising and falling slew rates.
Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing into the device.
f ≤ 1kHz (see typical performance Characteristics)
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SNOS989G – JANUARY 2002 – REVISED MARCH 2013
5V Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for at TJ = 25°C, V+ = 5V, V− = 0V, VO = VCM = V+/2, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
ISC
Parameter
Output Short Circuit Current
Min (1)
Conditions
+
Sourcing to V /2
(7)
Sinking from V+/2 (7)
IOUT
Output Current
160
120
85
190
Power Supply Rejection Ratio
See
Supply Current (Enabled)
No Load
Max (1)
Units
mA
110
(6)
IS
(2)
100
79
VO = 0.5V from either supply
PSRR
Typ
72
mA
96
Supply Current (Disabled)
dB
3.6
5.8
8.0
0.40
0.8
1.0
mA
V+ −1.65
TH_SD
Threshold Voltage for Shutdown
Mode
I_SD PIN
Shutdown Pin Input Current
−30
μA
TON
On Time after Shutdown
83
nsec
TOFF
Off Time to Shutdown
160
nsec
ROUT
Output Resistance Closed Loop
(7)
SD Pin Connected to 0V (5)
RF = 10kΩ, f = 1kHz, AV = −1
29
RF = 10kΩ, f = 1MHz, AV = −1
253
V
mΩ
Short circuit test is a momentary test.
±5V Electrical Characteristics
Unless otherwise specified, all limits ensured for at TJ = 25°C, VSUPPLY = ±5V, VO = VCM = GND, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
−3dB BW
BW
Conditions
AV = +1
Min (1)
Typ (2)
150
228
AV = −1
65
Max (1)
Units
MHz
BW0.1dB
0.1dB Gain Flatness
RF = 2.26kΩ, RL = 1kΩ
18
MHz
FPBW
Full Power Bandwidth
AV = +1, VOUT = 2VPP, −1dB
29
MHz
GBW
Gain Bandwidth Product
AV = +1
90
MHz
en
Input-Referred Voltage Noise
RF = 33kΩ
in
Input-Referred Current Noise
RF = 1MΩ
f = 10kHz
19
f = 1MHz
16
f = 10kHz
1.13
f = 1MHz
0.34
nV/√Hz
pA/√Hz
THD
Total Harmonic Distortion
f = 5MHz, VO = 2VPP, AV = +2,
RL = 1kΩ
−71.2
dBc
DG
Differential Gain
NTSC, AV = +2
RL = 150Ω
0.11
%
DP
Differential Phase
NTSC, AV = +2
RL = 150Ω
0.053
deg
TS
Settling Time
VO = 2VPP, ±0.1%
SR
Slew Rate
AV = −1 (3)
VOS
Input Offset Voltage
TC VOS
Input Offset Voltage Drift
IB
(1)
(2)
(3)
(4)
(5)
Input Bias Current
140
33
ns
200
V/µs
1.03
See (4)
See
(5)
5
7
8
−1.40
mV
µV/°C
−2.6
−3.25
µA
All limits are ensured by testing or statistical analysis.
Typical values represent the most likely parametric norm.
Slew rate is the average of the rising and falling slew rates.
Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing into the device.
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±5V Electrical Characteristics (continued)
Unless otherwise specified, all limits ensured for at TJ = 25°C, VSUPPLY = ±5V, VO = VCM = GND, and RL = 2kΩ to V+/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min (1)
Typ (2)
Max (1)
Units
20
800
1000
nA
IOS
Input Offset Current
RIN
Common Mode Input Resistance
AV +1, f = 1kHz, RS = 1MΩ
7.5
MΩ
CIN
Common Mode Input
Capacitance
AV = +1, RS = 100kΩ
1.28
pF
CMVR
Common Mode Input Voltage
Range
CMRR ≥ 50dB
−5.3
3.8
3.6
4.0
CMRR
Common Mode Rejection Ratio
See (6)
72
95
AVOL
Large Signal Voltage Gain
VO = 9VPP, RL = 2kΩ
88
84
100
VO = 8VPP, RL = 150Ω
74
70
77
RL = 2kΩ, VID = 200mV
4.85
4.96
RL = 150Ω, VID = 200mV
4.55
4.80
RL = 50Ω, VID = 200mV
3.60
VO
Output Swing
High
Output Swing
Low
Output Short Circuit Current
4.55
−4.90
−4.85
−4.55
−4.65
−4.30
Sourcing to Ground (7)
100
80
168
Sinking to Ground (7)
110
85
190
Output Current
VO = 0.5V from either supply
Power Supply Rejection Ratio
See (8)
IS
Supply Current (Enabled)
No Load
Supply Current (Disabled)
72
V
mA
112
mA
96
dB
4.18
6.5
8.5
0.758
1.0
1.3
mA
V+ − 1.67
V
−84
μA
On Time after Shutdown
83
nsec
Off Time to Shutdown
160
nsec
TH_SD
Threshold Voltage for Shutdown
Mode
I_SD PIN
Shutdown Pin Input Current
TON
TOFF
ROUT
Output Resistance Closed Loop
6
V
RL = 150Ω, VID = −200mV
PSRR
(6)
(7)
(8)
(9)
dB
−4.97
IOUT
V
dB
RL = 2kΩ, VID = −200mV
RL = 50Ω, VID = −200mV
ISC
−5.2
−5.1
SD Pin Connected to −5V (9)
RF = 10kΩ, f = 1kHz, AV = −1
32
RF = 10kΩ, f = 1MHz, AV = −1
226
mΩ
f ≤ 1kHz (see typical performance Characteristics)
Short circuit test is a momentary test.
f ≤ 1kHz (see typical performance Characteristics)
Positive current corresponds to current flowing into the device.
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Connection Diagram
6
1
OUTPUT
5
V
-
2
+
+IN
V
+
N/C
-IN
+IN
4
2
8
-
7
SD
-
3
1
-IN
V
Figure 2. SOT-23-6
Top View
-
3
4
+
6
5
SD
+
V
OUTPUT
N/C
Figure 3. SOIC-8
Top View
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Typical Performance Characteristics
−
+
At TJ = 25°C, V = +2.5, V = −2.5V, RF = 330Ω for AV = +2, RF = 1kΩ for AV = −1. Unless otherwise specified.
Output Sinking Saturation Voltage vs. IOUT
for Various Temperature
Output Sourcing Saturation Voltage vs. IOUT
for Various Temperature
1
1
85°C
0.9
0.8
0.8
0.7
0.7
85°C
+
-
VOUT FROM V (V)
25°C
125°C
VOUT FROM V (V)
125°C
0.9
0.6
0.5
0.4
-40°C
0.3
0.6
25°C
0.5
0.4
-40°C
0.3
0.2
0.2
0.1
0.1
VS=±2.5V
0
0
VS=±2.5V
0
20 40 60 80 100 120 140 160 180 200
0
20 40 60 80 100 120 140 160 180 200
ISOURCING (mA)
ISINK (mA)
Figure 4.
Figure 5.
Positive Output Saturation Voltage vs. VSUPPLY
for Various Temperature
Negative Output Saturation Voltage vs. VSUPPLY
for Various Temperature
0.2
125°C
SATURATION VOLTAGE FROM V- (V)
+
SATURATION VOLTAGE FROM V (V)
0.2
0.18
0.16
85°C
0.14
0.12
0.1
-40°C
0.08
0.06
25°C
0.04
RL = 150: TIED TO VS/
2
0.02
0
2
4
6
8
0.18
125°C
0.16
85°C
0.14
0.12
0.1
0.08
0.04
RL=150: TIED TO VS/2
0.02
0
10
2
12
4
6
Figure 6.
Figure 7.
VOUT from V+ vs.
ISOURCE
VOUT from V− vs.
ISINK
VS=±5V
VS=±5V
VOUT FROM V (V)
1
1
-
+
12
10
10
VOUT FROM V (V)
10
8
VS (V)
VS (V)
125°C
-40°C
0.1
125°C
25°C
85°C
85°C
0.01
0.1
1
100
10
ISOURCE (mA)
-40°C
0.1
25°C
1000
0.01
0.1
Figure 8.
8
-40°C
25°C
0.06
1
10
ISINK (mA)
100
1000
Figure 9.
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Typical Performance Characteristics (continued)
−
+
At TJ = 25°C, V = +2.5, V = −2.5V, RF = 330Ω for AV = +2, RF = 1kΩ for AV = −1. Unless otherwise specified.
IOS vs.
VS for Various Temperature
VOS vs.
VS for 3 Representative Units
1
0.01
TJ = 125°C
125°C
0
0.5
-0.01
UNIT 1
85°C
25°C
-0.02
VOS (mV)
IOS (nA)
0
-0.03
UNIT 2
-0.5
-1
-0.04
UNIT 3
-40°C
-1.5
-0.05
-0.06
-2
2
8
6
4
10
12
2
3
4
5
VS (V)
7
8
10
9
Figure 10.
Figure 11.
VOS vs.
VS for 3 Representative Units
VOS vs.
VS for 3 Representative Units
0.6
1
TJ = 85°C
0.4
0.5
0.2
VOS (mV)
0
UNIT 2
-0.5
UNIT 1
TJ = 25°C
0
UNIT 1
VOS (mV)
6
VS (V)
-0.2
UNIT 2
-0.4
-0.6
UNIT 3
-0.8
-1
UNIT 3
-1
-1.2
-1.5
2
3
4
5
7
6
8
9
2
10
3
4
6
7
8
10
9
Figure 12.
Figure 13.
VOS vs.
VS for 3 Representative Units
ISUPPLY vs.
VCM for Various Temperature
7
0.6
6.5
0.4
VS=10V
6
UNIT 1
0.2
125°C
5.5
0
IS (mA)
VOS (mV)
5
VS (V)
VS (V)
UNIT 2
-0.2
TJ= -40°C
-0.4
UNIT 3
5
85°C
4.5
4
3.5
-0.6
25°C
3
-0.8
2.5
-1
2
-40°C
2
3
4
5
6
7
8
9
10
VS (V)
Figure 14.
-1 0
1
2
3 4 5
VCM (V)
6
7
8
9 10
Figure 15.
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Typical Performance Characteristics (continued)
−
+
At TJ = 25°C, V = +2.5, V = −2.5V, RF = 330Ω for AV = +2, RF = 1kΩ for AV = −1. Unless otherwise specified.
ISUPPLY vs.
VS for Various Temperature
IB vs.
VS for Various Temperature
-1
7
125°C
6.5
-1.2
6
-1.6
5
IB (µA)
IS (mA)
5.5
-40°C
-1.4
85°C
4.5
25°C
4
-1.8
25°C
-2
3.5
-2.2
-40°C
3
85°C
-2.4
2.5
125°C
-2.6
2
2
3
4
5
6
7
9
8
10
4
2
11
VS (V)
Figure 16.
1
0
8
6
VS (V)
Figure 17.
Bandwidth for Various VS
Bandwidth for Various VS
6
6
VS = 3V
3V
0
3
0
-6
VS = 10V
5V
-3
dB
dB
-12
10V
-6
-18
-9
-24
3V
5V
-12
AV = +1
-30
RL = 500:
-15
1M
AV = -1
10M
100M
300M
10M
Figure 18.
Figure 19.
Gain vs.
Frequency Normalized
Gain vs.
Frequency Normalized
5
5
0
0
-5
-5
-20
-25
AV = +1
-20
AV = -5
-25
AV = +5
-30
AV = +10
RL = 500:
-45
10k
1M
10M
100k
FREQUENCY (Hz)
AV = -10
-35
-40
-40
100M 300M
RL - 500:
-45
10k
100k
1M
10M
100M 300M
FREQUENCY (Hz)
Figure 20.
10
AV = -2
-15
AV = +2
-30
-35
300M
AV = -1
-10
dB
dB
-15
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
-10
10V
RL = 500:
-36
1M
Figure 21.
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Typical Performance Characteristics (continued)
−
+
At TJ = 25°C, V = +2.5, V = −2.5V, RF = 330Ω for AV = +2, RF = 1kΩ for AV = −1. Unless otherwise specified.
Gain and phase vs.
Frequency for Various Temperature
0.1dB Gain Flatness
70
140
PHASE
85/25/ & -40°C
60
0.00
10V
3V
+
-
RS
-0.40
GAIN (dB)
dB
-0.20
RF
-0.60
RS = 1k
50
100
40
80
30
60
20
40
5V
0
GAIN
85/25/ & -40°C
-10
RF = 2.51k VS = 5V
-40
1
10M
M
FREQUENCY (Hz)
-30
100k
100M
1M
10M
Figure 23.
Frequency Response vs.
Temperature
Harmonic Distortion
10
-40
85°C
5
-50
DISTORTION (dBc)
0
-5
dB
-60
100M 200M
FREQUENCY (Hz)
Figure 22.
25°C
-10
-40°C
-15
-20
-20
-20
RF = 2.26k VS = 10V
-1.00
100k
20
10
0
RF = 2.65k VS = 3V
-0.80
THD
-60
3rd
2nd
-70
3rd
2nd
-80
f = 5MHz
A = +2
4th
AV = +1
-90
RL = 1k
RL = 500:
-25
100k
VS = 5V
10
M
FREQUENCY (Hz)
1M
-100
100M 300M
1
2.5
3
3.5
4
4.5 4.75
On-Off Switching DC Voltage
0.07
0.12 VS = 5V
0.1 RL = 150:
f = 3.58MHz
0.08
0.06
0.05
0.04
0.03
PHASE
0.04
0.02
0.02
0.01
0
0.00
-0.02
-0.01
-0.04
-0.02
-0.06
-0.03
-0.08
-0.1
-0.04
-25
0
25
50
SHUTDOWN PULSE
VOLT
GAIN
DIFF PHASE (°)
DIFF GAIN (%)
Differential Gain/Phase
-50
2
Figure 25.
0.14
-100 -75
1.5
OUTPUT VOLTAGE (VPP)
Figure 24.
0.06
120
PHASE (°)
0.20
-0.05
75 100
0.8
SWITCHED DC VOLTAGE
0.3
AV = 2
0
-0.2
80 ns/DIV
IRE
Figure 26.
Figure 27.
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Typical Performance Characteristics (continued)
−
+
At TJ = 25°C, V = +2.5, V = −2.5V, RF = 330Ω for AV = +2, RF = 1kΩ for AV = −1. Unless otherwise specified.
On-Off Switching 10MHz
Slew Rate (Positive)
1.50
OUTPUT
1.00
SHUTDOWN PULSE
0.50
VOLT
VOLT
0.6
0.4
0.2
0.00
-0.50
0
SWITCHED 10MHz SIGNAL
-0.2
INPUT
AV = 2
-1.00
-0.4
-0.6
-1.50
100 ns/DIV
4 ns/DIV
Figure 28.
Figure 29.
Slew Rate (Negative)
On-Off Switching of Sinewave
1.50
SHUTDOWN PULSE
INPUT
1.00
VOLT
VOLT
0.50
0.00
1.00
0.00
OUTPUT
-0.50
-1.00
-1.00
AV = +2
-2.00
-1.50
4 ns/DIV
25 ms/DIV
Figure 30.
Figure 31.
Power Sweep
CMRR vs.
Frequency
120
20
1MHz
AV = +1
15 VS = 5V
VS = 10V
100
10MHz
10
80
dB
OUTPUT
(dBm)
25MHz
5
50MHz
60
VS = 3V
0
40
100MHz
-5
20
-10
-15
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16
INPUT (dBm)
Figure 32.
12
VS =
5V
0
10
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 33.
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Typical Performance Characteristics (continued)
−
+
At TJ = 25°C, V = +2.5, V = −2.5V, RF = 330Ω for AV = +2, RF = 1kΩ for AV = −1. Unless otherwise specified.
PSRR vs.
Frequency
Current Noise
80
6
VS = 3V TO 10V
(pA/ Hz)
NEGATIVE PSRR
70
60
4
INPUT CURRENT NOISE
50
POSITIVE PSRR
dB
RF = 1M
5
40
30
20
VS = 5V
10
3
2
1
AV = +1
0
10
100
10k 100k
1k
FREQUENCY (Hz)
1M
0
1k
10M
100k
10k
FREQUENCY (Hz)
1M
Figure 34.
Figure 35.
Voltage Noise
Closed Loop Output Resistance vs.
Frequency
1000
40
VS = 3V TO 10V
900
35
RF = RS = 10k
3V
AV = -1
800
30
700
600
m:
en(nV/ Hz)
5V
25
20
500
400
15
300
10
200
10V
5
100
0
100
0
1k
10k
100k
1M
10M
100k
10k
FREQUENCY
(Hz)
1k
FREQUENCY (Hz)
1M
10M
Figure 36.
Figure 37.
Off Isolation
Small Signal Pulse Response (AV = +1, RL = 2k )
-10
-20
-30
50 mV/DIV
AV = +1
dB
-40
-50
AV = +2
-60
-70
-80
1k
VS = 3 to 10V
10k
100k
1M
10M
100M
50 ns/DIV
FREQUENCY (Hz)
Figure 38.
Figure 39.
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Typical Performance Characteristics (continued)
+
−
At TJ = 25°C, V = +2.5, V = −2.5V, RF = 330Ω for AV = +2, RF = 1kΩ for AV = −1. Unless otherwise specified.
Small Signal Pulse Response (AV = −1)
Large Signal Pulse Response (RL = 2k)
VS = 3V
AV = +1
RL = 100:
0.5 V/DIV
50 mV/DIV
CL = ~ 5pF
VS = 3 to 10V
CL = 10pF
RS = 10:
50 ns/DIV
50 ns/DIV
Figure 40.
Figure 41.
Large Signal Pulse Response
Large Signal Pulse Response
VS = 10V
AV = +1
AV = +1
RL = 100:
RL = 100:
CL = ~5pF
CL = ~ 5pF
0.5 V/DIV
0.5 V/DIV
VS = 5V
50 ns/DIV
50 ns/DIV
Figure 42.
14
Figure 43.
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APPLICATION NOTES
INPUT AND OUTPUT TOPOLOGY
All input / output pins are protected against excessive voltages by ESD diodes connected to V+ and V- rails (see
Figure 44). These diodes start conducting when the input / output pin voltage approaches 1Vbe beyond V+ or Vto protect against over voltage. These diodes are normally reverse biased. Further protection of the inputs is
provided by the two resistors (R in Figure 44), in conjunction with the string of anti-parallel diodes connected
between both bases of the input stage. The combination of these resistors and diodes reduces excessive
differential input voltages approaching 2Vbe. The most common situation when this occurs is when the device is
put in shutdown and the LMH6639’s inputs no longer follow each other. In such a case, the diodes may conduct.
As a consequence, input current increases, and a portion of signal may appear at the Hi-Z output. Another
possible situation for the conduction of these diodes is when the LMH6639 is used as a comparator (or with little
or no feedback). In either case, it is important to make sure that the subsequent current flow through the device
input pins does not violate the Absolute Maximum Ratings of the device. To limit the current through the
protection circuit extra series resistors can be placed. Together with the build in series resistors of several
hundred ohms this extra resistors can limit the input current to a safe number depending on the used application.
Be aware of the effect that extra series resistors may impact the switching speed of the device. A special
situation occurs when the part is configured for a gain of +1, which means the output is directly connected to the
inverting input, see Figure 45. When the part is now placed in shutdown mode the output comes in a high
impedance state and is unable to keep the inverting input at the same level as the non-inverting input. In many
applications the output is connected to the ground via a low impedance resistor. When this situation occurs and
there is a DC voltage offset of more than 2 volt between the non-inverting input and the output, current flows
from the non-inverting input through the series resistors R via the bypass diodes to the output. Now the input
current becomes much bigger than expected and in many cases the source at the input cannot deliver this
current and will drop down. Be sure in this situation that no DC current path is available from the non-inverting
input to the output pin, or from the output pin to the load resistor. This DC path is drawn by a curved line and can
be broken by placing one of the capacitors CIN or COUT or both, depending on the used application.
V+
V+
V+
R
R
IN-
IN+
V-
V-
Figure 44.
5V
2
-
7
6
SD
+
CIN
3
4
8
COUT
1k
Figure 45. DC path while in shutdown
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MULTIPLEXING 5 AND 10MHz
The LMH6639 may be used to implement a circuit which multiplexes two signals of different frequencies. Three
LMH6639 high speed op-amps are used in the circuit of Figure 46 to accomplish the multiplexing function. Two
LMH6639 are used to provide gain for the input signals, and the third device is used to provide output gain for
the selected signal.
330:
330:
1k
5V
2
6
IC1
3
FREQ 1
5V
7
-
1k
2
-
+
7
3
4
50
OUT
8
+
4
330:
6
IC3
8
2k
5V
330:
5V
VREF
7
-
6
IC2
+
FREQ 2
8
4
50
SD
SD
Note: Pin numbers pertain to SOIC-8 package
Figure 46. Multiplexer
Multiplexing signals “FREQ 1” and “FREQ 2” exhibit closed loop non-inverting gain of +2 each based upon
identical 330Ω resistors in the gain setting positions of IC1 and IC2. The two multiplexing signals are combined
at the input of IC3, which is the third LMH6639. This amplifier may be used as a unity gain buffer or may be used
to set a particular gain for the circuit.
1.5
SHUTDOWN
1
VOLT
0.5
0
-0.5
-1
TIME (400 ns/DIV)
Figure 47. Switching between 5 and 10MHz
1k resistors are used to set an inverting gain of −1 for IC3 in the circuit of Figure 46. Figure 47 illustrates the
waveforms produced. The upper trace shows the switching waveform used to switch between the 5MHz and
10MHz multiplex signals. The lower trace shows the output waveform consisting of 5MHz and 10MHz signals
corresponding to the high or low state of the switching signal.
16
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SNOS989G – JANUARY 2002 – REVISED MARCH 2013
In the circuit of Figure 46, the outputs of IC1 and IC2 are tied together such that their output impedances are
placed in parallel at the input of IC3. The output impedance of the disabled amplifier is high compared both to the
output impedance of the active amplifier and the 330Ω gain setting resistors. The closed loop output resistance
for the LMH6639 is around 0.2Ω. Thus the active state amplifier output impedance dominates the input node to
IC3, while the disabled amplifier is assured of a high level of suppression of unwanted signals which might be
present at the output.
SHUTDOWN OPERATION
With SD pin left floating, the device enters normal operation. However, since the SD pin has high input
impedance, it is best tied to V+ for normal operation. This will avoid inadvertent shutdown due to capacitive pickup from nearby nodes. LMH6639 will typically go into shutdown when SD pin is more than 1.7V below V+,
regardless of operating supplies.
The SD pin can be driven by push-pull or open collector (open drain) output logic. Because the LMH6639's
shutdown is referenced to V+, interfacing to the shutdown logic is rather simple, for both single and dual supply
operation, with either form of logic used. Typical configurations are shown in Figure 48 and Figure 49 below for
push-pull output:
+
V
PUSH-PULL
OUTPUT
LOGIC GATE
VS
V
-
+
-
+
V
V
-
SD
LMH6639
Figure 48. Shutdown Interface (Single Supply)
V
+
PUSH-PULL
OUTPUT
LOGIC GATE
V
+
V
-
+
-
V
+
V
V
-
SD
LMH6639
-
Figure 49. Shutdown Interface (Dual Supplies)
Common voltages for logic gates are +5V or +3V. To ensure proper power on/off with these supplies, the logic
should be able to swing to 3.4V and 1.4V minimum, respectively.
LMH6639’s shutdown pin can also be easily controlled in applications where the analog and digital sections are
operated at different supplies. Figure 50 shows a configuration where a logic output, SD, can turn the LMH6639
on and off, independent of what supplies are used for the analog and the digital sections:
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SD
V
+
+
+
-
+
V
-
-
V
SD
LMH6639
Figure 50. Shutdown Interface (Single Supply, Open Collector Logic)
The LMH6639 has an internal pull-up resistor on SD such that if left un-connected, the device will be in normal
operation. Therefore, no pull-up resistor is needed on this pin. Another common application is where the
transistor in Figure 50 above, would be internal to an open collector (open drain) logic gate; the basic
connections will remain the same as shown.
PCB LAYOUT CONSIDERATION AND COMPONENTS SELECTION
Care should be taken while placing components on a PCB. All standard rules should be followed especially the
ones for high frequency and/ or high gain designs. Input and output pins should be separated to reduce crosstalk, especially under high gain conditions. A groundplane will be helpful to avoid oscillations. In addition, a
ground plane can be used to create micro-strip transmission lines for matching purposes. Power supply, as well
as shutdown pin de-coupling will reduce cross-talk and chances of oscillations.
Another important parameter in working with high speed amplifiers is the component values selection. Choosing
high value resistances reduces the cut-off frequency because of the influence of parasitic capacitances. On the
other hand choosing the resistor values too low could "load down" the nodes and will contribute to higher overall
power dissipation. Keeping resistor values at several hundreds of ohms up to several kΩ will offer good
performance.
Texas Instruments suggests the following evaluation boards as a guide for high frequency layout and as an aid in
device testing and characterization:
18
Device
Package
Evaluation Board PN
LMH6639MA
8-Pin SOIC
CLC730027
LMH6639MF
SOT-23-6
CLC730116
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REVISION HISTORY
Changes from Revision F (March 2013) to Revision G
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19
PACKAGE OPTION ADDENDUM
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19-May-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
LMH6639 MDC
ACTIVE
DIESALE
Y
0
400
RoHS & Green
Call TI
Level-1-NA-UNLIM
-40 to 85
LMH6639MA
NRND
SOIC
D
8
95
Non-RoHS
& Green
Call TI
Level-1-235C-UNLIM
-40 to 85
LMH66
39MA
LMH6639MA/NOPB
ACTIVE
SOIC
D
8
95
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMH66
39MA
Samples
LMH6639MAX/NOPB
ACTIVE
SOIC
D
8
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
LMH66
39MA
Samples
LMH6639MF
NRND
SOT-23
DBV
6
1000
Non-RoHS
& Green
Call TI
Level-1-260C-UNLIM
-40 to 85
A81A
LMH6639MF/NOPB
ACTIVE
SOT-23
DBV
6
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
A81A
Samples
LMH6639MFX/NOPB
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 85
A81A
Samples
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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