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LMR33620CDDA

LMR33620CDDA

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    HSOIC-8_3.9X4.9MM-EP

  • 描述:

    IC REG BUCK ADJUSTABLE 2A 8SOPWR

  • 数据手册
  • 价格&库存
LMR33620CDDA 数据手册
LMR33620 LMR33620 SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 www.ti.com LMR33620 SIMPLE SWITCHER® 3.8-V to 36-V, 2-A Synchronous Step-down Voltage Converter 1 Features 3 Description • The LMR33620 SIMPLE SWITCHER® regulator is an easy-to-use, synchronous, step-down DC/DC converter that delivers best-in-class efficiency for rugged industrial applications. The LMR33620 drives up to 2 A of load current from an input of up to 36 V. The LMR33620 provides high light load efficiency and output accuracy in a very small solution size. Features such as a power-good flag and precision enable provide both flexible and easy-to-use solutions for a wide range of applications. The LMR33620 automatically folds back frequency at light load to improve efficiency. Integration eliminates most external components and provides a pinout designed for simple PCB layout. Protection features include thermal shutdown, input undervoltage lockout, cycleby-cycle current limit, and hiccup short-circuit protection. The LMR33620 is available in an 8-pin HSOIC package and in a 12-pin 3 mm × 2 mm next generation VQFN package with wettable flanks. This device is also available in an AEC-Q100-qualified version. • • • • • • Functional Safety-Capable – Documentation available to aid functional safety system design Configured for rugged industrial applications – Input voltage range: 3.8 V to 36 V – Output voltage range: 1 V to 24 V – Output current: 2 A – Peak-current-mode control – Short minimum on-time of 68 ns – Frequency: 400 kHz, 1.4 MHz, 2.1 MHz – Junction temperature range –40°C to +125°C – Low EMI and low switching noise – Integrated compensation network Low EMI and switching noise – HotRod™ package – Parallel input current paths High power conversion at all loads – Peak efficiency > 95% – Low operating quiescent current of 25 µA Flexible system interface – Power-good flag and precision enable Use TPSM53602 module for faster time to market Create a custom design using the LMR33620 with the WEBENCH® Power Designer • • PACKAGE(1) BODY SIZE (NOM) LMR33620 HSOIC (8) 5.00 mm × 4.00 mm LMR33620 VQFN (12) 3.00 mm × 2.00 mm (1) 2 Applications • Device Information PART NUMBER For all available packages, see the orderable addendum at the end of the data sheet. Motor drive systems: drones, AC inverters, VF drives, servos Factory and building automation systems: PLC CPU, HVAC control, elevator control General purpose wide VIN powers 100 BOOT VIN 95 VIN CBOOT EN SW L1 PGND VCC PG RFBT CVCC FB 90 VOUT COUT Efficiency (%) CIN 85 80 75 8V 70 12V 65 24V 60 RFBB AGND 36V 55 0.01 0.1 Output Current (A) Simplified Schematic 1 10 C024 Efficiency versus Output Current VOUT = 5 V, 400 kHz, VQFN An©IMPORTANT NOTICEIncorporated at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, Copyright 2020 Texas Instruments Submit Document Feedback intellectual property matters and other important disclaimers. PRODUCTION DATA. Product Folder Links: LMR33620 1 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 Table of Contents 1 Features............................................................................1 2 Applications..................................................................... 1 3 Description.......................................................................1 4 Revision History.............................................................. 2 5 Device Comparison Table...............................................3 6 Pin Configuration and Functions...................................4 7 Specifications.................................................................. 5 7.1 Absolute Maximum Ratings........................................ 5 7.2 ESD Ratings............................................................... 5 7.3 Recommended Operating Conditions.........................5 7.4 Thermal Information....................................................6 7.5 Electrical Characteristics.............................................6 7.6 Timing Characteristics.................................................7 7.7 System Characteristics............................................... 8 7.8 Typical Characteristics................................................ 9 8 Detailed Description......................................................10 8.1 Overview................................................................... 10 8.2 Functional Block Diagram......................................... 10 8.3 Feature Description...................................................11 8.4 Device Functional Modes..........................................14 9 Application and Implementation.................................. 18 9.1 Application Information............................................. 18 9.2 Typical Application.................................................... 18 9.3 What to Do and What Not to Do............................... 30 10 Layout...........................................................................32 10.1 Layout Guidelines................................................... 32 10.2 Layout Example...................................................... 34 11 Device and Documentation Support..........................36 11.1 Device Support........................................................36 11.2 Documentation Support.......................................... 36 11.3 Receiving Notification of Documentation Updates.. 36 11.4 Support Resources................................................. 36 11.5 Trademarks............................................................. 37 11.6 Electrostatic Discharge Caution.............................. 37 11.7 Glossary.................................................................. 37 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (May 2020) to Revision E (November 2020) Page • Added functional safety bullet to the Features ...................................................................................................1 • Updated the numbering format for tables, figures and cross-references throughout the document. .................1 • Added VQFN package drawing........................................................................................................................ 34 Changes from Revision C (March 2019) to Revision D (May 2020) Page • Added link to TPSM53602 product page ........................................................................................................... 1 • Changed heading to device option .................................................................................................................... 3 Changes from Revision B (June 2018) to Revision C (March 2019) Page • Changed heading to device option .................................................................................................................... 3 • Changed Minimum peak current to reflect ATE data.......................................................................................... 6 • Changed zero cross current to reflect ATE data.................................................................................................6 • Changed to new current limit equation............................................................................................................. 13 • Added new de-rate curve .................................................................................................................................23 Changes from Revision A (April 2018) to Revision B (June 2018) Page • Changed block diagram to fix drawing error..................................................................................................... 10 • Added graphs for Typical Switching Frequency in Dropout Mode ................................................................... 16 Changes from Revision * (February 2018) to Revision A (April 2018) Page • Added WSON information throughout data sheet ............................................................................................. 1 2 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 5 Device Comparison Table DEVICE OPTION PACKAGE LMR33620ADDA LMR33620BDDA DDA (8-pin HSOIC) 5 × 4 mm LMR33620CDDA LMR33620ARNX LMR33620BRNX RNX (12-pin VQFN) 3 × 2 × 0.85 mm LMR33620CRNX FREQUENCY RATED CURRENT 400 kHz 2A 1400 kHz 2A 2100 kHz 2A 400 kHz 2A 1400 kHz 2A 2100 kHz 2A OUTPUT VOLTAGE Adjustable Adjustable Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 3 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 6 Pin Configuration and Functions SW 12 PGND 1 VIN 2 8 SW 7 BOOT THERMAL PAD EN 3 6 VCC PG 4 5 FB 11 PGND PGND 1 VIN 2 10 VIN NC 3 9 EN BOOT 4 8 PG Not to scale 6 7 AGND FB 5 Figure 6-1. DDA Package 8-Pin HSOIC With PowerPAD™ Top View VCC Figure 6-2. RNX Package 12-Pin VQFN Top View Table 6-1. Pin Functions PIN HSOIC TYPE DESCRIPTION VQFN NAME 1 1,11 PGND G Power ground terminal. Connect to system ground and AGND. Connect to bypass capacitor with short wide traces. 2 2,10 VIN P Input supply to regulator. Connect a high-quality bypass capacitor or capacitors directly to this pin and PGND. 3 9 EN A Enable input to regulator. High = ON, low = OFF. Can be connected directly to VIN; Do not float. 4 8 PG A Open drain power-good flag output. Connect to suitable voltage supply through a current limiting resistor. High = power OK, low = power bad. Flag pulls low when EN = Low. Can be left open when not used. 5 7 FB A Feedback input to regulator. Connect to tap point of feedback voltage divider. Do not float. Do not ground. 6 5 VCC P Internal 5-V LDO output. Used as supply to internal control circuits. Do not connect to external loads. Can be used as logic supply for power-good flag. Connect a highquality 1-µF capacitor from this pin to GND. 7 4 BOOT P Boot-strap supply voltage for internal high-side driver. Connect a high-quality 100-nF capacitor from this pin to the SW pin. On the VQFN package connect the SW pin to NC on the PCB. This simplifies the connection from the CBOOT capacitor to the SW pin. 8 12 SW P Regulator switch node. Connect to power inductor. On the VQFN package connect the SW pin to NC on the PCB. This simplifies the connection from the CBOOT capacitor to the SW pin. THERMAL PAD 6 AGND G Analog ground for regulator and system. Ground reference for internal references and logic. All electrical parameters are measured with respect to this pin. Connect to system ground on PCB. For the HSOIC package, the pad on the bottom of the device serves as both the AGND connection and a thermal connection to the heat sink ground plane. This pad must be soldered to a ground plane to achieve good electrical and thermal performance. — 3 NC — On the VQFN package the SW pin must be connected to NC on the PCB. This simplifies the connection from the CBOOT capacitor to the SW pin. This pin has no internal connection to the regulator. A = Analog, P = Power, G = Ground 4 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 7 Specifications 7.1 Absolute Maximum Ratings Over the recommended operating junction temperature range(1) PARAMETER MIN VIN to PGND –0.3 38 EN to AGND(2) –0.3 VIN + 0.3 FB to AGND –0.3 5.5 0 22 –0.3 0.3 VIN + 0.3 PG to AGND(2) Voltages MAX AGND to PGND UNIT V SW to PGND –0.3 SW to PGND less than 100-ns transients –3.5 38 BOOT to SW –0.3 5.5 VCC to AGND(4) –0.3 5.5 TJ Junction temperature(3) –40 150 °C Tstg Storage temperature –55 150 °C (1) (2) (3) (4) V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The voltage on this pin must not exceed the voltage on the VIN pin by more than 0.3 V Operating at junction temperatures greater than 125°C, although possible, degrades the lifetime of the device. Under some operating conditions the VCC LDO voltage may increase beyond 5.5V. 7.2 ESD Ratings UNIT VALUE Human-body model (HBM) V(ESD) (1) (2) Electrostatic discharge (1) Charged-device model (CDM) ±2500 V (2) ±750 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions Over the recommended operating temperature range of –40 °C to 125 °C (unless otherwise noted) (1) MIN MAX 3.8 36 EN (2) 0 VIN PG(2) 0 18 Adjustable output voltage VOUT (3) 1 24 V Output current IOUT 0 2 A VIN to PGND Input voltage (1) (2) (3) UNIT V Recommended operating conditions indicate conditions for which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications, see Section 7.5. The voltage on this pin must not exceed the voltage on the VIN pin by more than 0.3 V. The maximum output voltage can be extended to 95% of VIN; contact TI for details. Under no conditions should the output voltage be allowed to fall below zero volts. Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 5 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 7.4 Thermal Information The value of RθJA given in this table is only valid for comparison with other packages and can not be used for design purposes. These values were calculated in accordance with JESD 51-7, and simulated on a 4-layer JEDEC board. They do not represent the performance obtained in an actual application. For design information see Maximum Ambient Temperature section. LMR336x0 THERMAL METRIC(1) (2) DDA (HSOIC) RNX (VQFN) 8 PINS 12 PINS UNIT 42.9(2) 72.5(2) °C/W 54 35.9 °C/W RθJA Junction-to-ambient thermal resistance RθJC(top) Junction-to-case (top) thermal resistance RθJB Junction-to-board thermal resistance 13.6 23.3 °C/W ψJT Junction-to-top characterization parameter 4.3 0.8 °C/W ψJB Junction-to-board characterization parameter 13.8 23.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 4.3 N/A °C/W (1) (2) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. The value of RθJA given in this table is only valid for comparison with other packages and can not be used for design purposes. These values were calculated in accordance with JESD 51-7, and simulated on a 4-layer JEDEC board. They do not represent the performance obtained in an actual application. For design information see Maximum Ambient Temperature section. 7.5 Electrical Characteristics Limits apply over the operating junction temperature (TJ) range of –40°C to +125°C, unless otherwise stated. Minimum and maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated, the following conditions apply: VIN = 12 V, VEN = 4 V. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE VIN Minimum operating input voltage IQ Non-switching input current; measured at VIN pin (2) VFB = 1.2 V ISD Shutdown quiescent current; measured at VIN pin EN = 0 VEN-VCC-H EN input level required to turn on internal LDO Rising threshold VEN-VCC-L EN input level required to turn off internal LDO Falling threshold 0.3 VEN-H EN input level required to start Rising threshold switching 1.2 3.8 V 24 34 µA 5 10 µA 1 V ENABLE V 1.231 1.26 V VEN-HYS Hysteresis below VEN-H Hysteresis below VEN-H; falling 100 mV ILKG-EN Enable input leakage current VEN = 3.3 V 0.2 nA INTERNAL SUPPLIES VCC Internal LDO output voltage appearing at the VCC pin VBOOT-UVLO Bootstrap voltage undervoltage lock-out threshold(3) 6 V ≤ VIN ≤ 36 V 4.75 5 5.25 2.2 V V VOLTAGE REFERENCE (FB PIN) VFB Feedback voltage; ADJ option IFB Current into FB pin; ADJ option CURRENT 6 0.985 FB = 1 V 1 1.015 V 0.2 50 nA LIMITS(4) ISC High-side current limit LMR33620 2.9 3.5 4 A ILIMIT Low-side current limit LMR33620 1.95 2.45 2.9 A IPEAK-MIN Minimum peak inductor current LMR33620 Submit Document Feedback 0.54 A Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 Limits apply over the operating junction temperature (TJ) range of –40°C to +125°C, unless otherwise stated. Minimum and maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated, the following conditions apply: VIN = 12 V, VEN = 4 V. PARAMETER TEST CONDITIONS MIN Zero current detector threshold IZC TYP MAX -0.106 UNIT A SOFT START tSS Internal soft-start time 2.9 4 6 ms POWER GOOD (PG PIN) VPG-HIGH-UP Power-good upper threshold rising % of FB voltage 105% 107% 110% VPG-HIGH-DN Power-good upper threshold falling % of FB voltage 103% 105% 108% VPG-LOW-UP Power-good lower threshold rising % of FB voltage 92% 94% 97% VPG-LOW-DN Power-good lower threshold falling % of FB voltage 90% 92% 95% tPG Power-good glitch filter delay(1) RPG Power-good flag RDSON VIN-PG Minimum input voltage for proper PG function 50-µA, EN = 0 V VPG PG logic low output 50-µA, EN = 0 V, VIN = 2V 60 170 VIN = 12 V, VEN = 4 V 76 150 VEN = 0 V 35 60 µs Ω 2 V 0.2 V OSCILLATOR ƒSW Switching frequency "A" Version 340 400 460 kHz ƒSW Switching frequency "B" Version 1.2 1.4 1.6 MHz ƒSW Switching frequency "C" Version, DDA package 1.8 2.1 2.4 MHz ƒSW Switching frequency "C" Version, RNX package 1.8 2.1 2.3 MHz RDS-ON-HS High-side MOSFET ONresistance RNX package 75 145 mΩ RDS-ON-HS High-side MOSFET ONresistance DDA package 95 160 mΩ RDS-ON-LS Low-side MOSFET ONresistance RNX package 50 95 mΩ RDS-ON-LS Low-side MOSFET ONresistance DDA package 66 110 mΩ MOSFETS (1) (2) (3) (4) See Power-Good Flag Output for details. This is the current used by the device open loop. It does not represent the total input current of the system when in regulation. When the voltage across the CBOOT capacitor falls below this voltage, the low side MOSFET is turned on to recharge CBOOT. The current limit values in this table are tested, open loop, in production. They may differ from those found in a closed loop application. 7.6 Timing Characteristics Limits apply over the operating junction temperature (TJ) range of –40°C to +125°C, unless otherwise stated. Minimum and maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated, the following conditions apply: VIN = 12 V, VEN = 4 V. NOM MAX tON-MIN Minimum switch on-time RNX package MIN 68 80 UNIT tON-MIN Minimum switch on-time DDA package 75 108 ns tOFF-MIN Minimum switch off-time RNX package 52 70 ns tOFF-MIN Minimum switch off-time DDA package 50 85 ns tON-MAX Maximum switch on-time 7 9 µs ns Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 7 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 7.7 System Characteristics The following specifications apply to a typical applications circuit, with nominal component values. Specifications in the typical (TYP) column apply to TJ = 25°C only. Specifications in the minimum (MIN) and maximum (MAX) columns apply to the case of typical components over the temperature range of TJ = –40°C to 125°C. These specifications are not ensured by production testing. PARAMETER VIN Operating input voltage range Output voltage regulation for VOUT = 5 V(1) VOUT Output voltage regulation for VOUT = 3.3 V(1) MIN TYP MAX 3.8 36 VOUT = 5 V, VIN = 7 V to 36 V, IOUT = 0 A to max. load –1.5% 2.5% VOUT = 5 V, VIN = 7 V to 36 V, IOUT = 1 A to max. load –1.5% 1.5% VOUT = 3.3 V, VIN = 3.8 V to 36 V, IOUT = 0 A to max. load –1.5% 2.5% VOUT = 3.3 V, VIN = 3.8 V to 36 V, IOUT = 1 A to max. load –1.5% 1.5% UNIT V ISUPPLY Input supply current when in regulation VIN = 12 V, VOUT = 3.3 V, IOUT = 0 A, RFBT = 1 MΩ VDROP Dropout voltage; (VIN – VOUT) DMAX Maximum switch duty cycle(2) VHC FB pin voltage required to trip short-circuit hiccup mode 0.4 V tHC Time between current-limit hiccup burst 94 ms tD Switch voltage dead time TSD (1) (2) 8 TEST CONDITIONS VOUT = 3.3 V, IOUT= 0 A Thermal shutdown temperature 25 µA VOUT = 5 V, IOUT = 1A Dropout at –1% of regulation, ƒSW = 140 kHz 150 mV VIN = VOUT = 12 V, IOUT = 1 A 98% 2 ns Shutdown temperature 165 °C Recovery temperature 148 °C Deviation is with respect to VIN =12 V, IOUT = 1 A. In dropout the switching frequency drops to increase the effective duty cycle. The lowest frequency is clamped at approximately: ƒMIN = 1 / (tON-MAX + tOFF-MIN). DMAX = tON-MAX /(tON-MAX + tOFF-MIN). Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 7.8 Typical Characteristics Unless otherwise specified the following conditions apply: TA = 25°C and VIN = 12 V 36 12 11 10 Shutdown Current (µA) Quiescent Current (µA) 34 32 30 28 26 -40C 24 9 8 7 6 5 4 25C 22 5 10 15 20 25 30 35 Input Voltage (V) -40C 2 25C 1 125C 20 0 3 0 0 40 125C 5 10 25 30 35 40 C003 EN = 0 V Figure 7-1. Non-Switching Input Supply Current Figure 7-2. Shutdown Supply Current 1.35 600 590 1.30 EN Threshold Voltage (V) 580 Output Current (mA) 20 Input Voltage (V) VFB = 1.2 V 570 560 550 540 530 -40C 520 25C 510 500 0 15 C005 1.25 1.20 1.15 1.10 UP 1.05 DN 125C 1.00 5 10 15 20 25 30 35 Input Voltage (V) VOUT = 0 V ƒS = 400 kHz 40 ±40 ±20 0 20 40 60 80 100 120 140 Temperature (C) C007 C006 See Figure 9-31 Figure 7-3. Short-Circuit Output Current Figure 7-4. Precision Enable Thresholds DN Peak Inductor Current (mA) OUTPUT VOLTAGE (0.8V/Div) 700 UP 650 600 550 500 -40C 450 25C 125C 400 0 0 5 INPUT VOLTAGE (1V/Div) IOUT = 1 mA 10 15 20 25 Input Voltage (V) See Figure 9-31 IOUT = 0 A VOUT = 5 V 30 35 40 C008 See Figure 9-31 ƒSW = 400 kHz Figure 7-5. UVLO Thresholds Figure 7-6. IPEAK-MIN Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 9 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 8 Detailed Description 8.1 Overview The LMR33620 is a synchronous peak-current-mode buck regulator designed for a wide variety of industrial applications. Advanced high speed circuitry allows the device to regulate from an input voltage of 20 V, while providing an output voltage of 3.3 V at a switching frequency of 2.1 MHz. The innovative architecture allows the device to regulate a 3.3-V output from an input of only 3.8 V. The regulator automatically switches modes between PFM and PWM depending on load. At heavy loads, the device operates in PWM at a constant switching frequency. At light loads, the mode changes to PFM with diode emulation allowing DCM. This reduces the input supply current and keeps efficiency high. The device features internal loop compensation which reduces design time and requires fewer external components than externally compensated regulators. The LMR33620 is available in an ultra-miniature VQFN package with wettable flanks. This package features extremely small parasitic inductance and resistance, enabling very high efficiency while minimizing switch node ringing and dramatically reducing EMI. The VIN/PGND pin layout is symmetrical on either side of the VQFN package. This allows the input current magnetic fields to partially cancel, resulting in reduce EMI generation. 8.2 Functional Block Diagram VCC INT. REG. BIAS OSCILLATOR EN VIN ENABLE LOGIC BOOT HS CURRENT SENSE 1.0V Reference PWM COMP. ERROR AMPLIFIER FB + - + - PG CONTROL LOGIC PFM MODE CONTROL SW DRIVER LS CURRENT SENSE POWER GOOD CONTROL AGND 10 Submit Document Feedback PGND Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 8.3 Feature Description 8.3.1 Power-Good Flag Output The power-good flag function (PG output pin) of the LMR33620 can be used to reset a system microprocessor whenever the output voltage is out of regulation. This open-drain output goes low under fault conditions, such as current limit and thermal shutdown, as well as during normal start-up. A glitch filter prevents false flag operation for short excursions of the output voltage, such as during line and load transients. The timing parameters of the glitch filter are found in Section 7.5. Output voltage excursions lasting less than t PG do not trip the power-good flag. Power-good operation can best be understood by reference to Figure 8-1 and Figure 8-2. Note that during initial power up, a delay of about 4 ms (typical) is inserted from the time that EN is asserted to the time that the power-good flag goes high. This delay only occurs during start-up and is not encountered during normal operation of the power-good function. The power-good output consists of an open-drain NMOS, requiring an external pullup resistor to a suitable logic supply. It can also be pulled up to either VCC or V OUT, through a 100-kΩ resistor, as desired. If this function is not needed, the PG pin must be left floating. When EN is pulled low, the flag output is also forced low. With EN low, power good remains valid as long as the input voltage is ≥ 2 V (typical). Limit the current into the powergood flag pin to less than 5 mA D.C. The maximum current is internally limited to about 35 mA when the device is enabled and about 65 mA when the device is disabled. The internal current limit protects the device from any transient currents that can occur when discharging a filter capacitor connected to this output. VOUT VPG-HIGH_UP (107%) VPG-HIGH-DN (105%) VPG-LOW-UP (95%) VPG-LOW-DN (93%) PG High = Power Good Low = Fault Figure 8-1. Static Power-Good Operation Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 11 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 Glitches do not cause false operation nor reset timer VOUT VPG-LOW-UP (95%) VPG-LOW-DN (93%) < tPG PG tPG tPG tPG Figure 8-2. Power-Good-Timing Behavior 8.3.2 Enable and Start-up Start-up and shutdown are controlled by the EN input. This input features precision thresholds, allowing the use of an external voltage divider to provide an adjustable input UVLO (see Section 9.2.2.10). Applying a voltage of ≥ V EN-VCC_H causes the device to enter standby mode, powering the internal VCC, but not producing an output voltage. Increasing the EN voltage to V EN-H fully enables the device, allowing it to enter start-up mode and starting the soft-start period. When the EN input is brought below V EN-H by V EN-HYS, the regulator stops running and enters standby mode. Further decrease in the EN voltage to below V EN-VCC-L completely shuts down the device. This behavior is shown in Figure 8-3. The EN input can be connected directly to VIN if this feature is not needed. This input must not be allowed to float. The values for the various EN thresholds can be found in Section 7.5 . The LMR33620 uses a reference-based soft start that prevents output voltage overshoots and large inrush currents as the regulator is starting up. A typical start-up waveform is shown in Figure 8-4, indicating typical timings. The rise time of the output voltage is about 4 ms (see Section 7.5). 12 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 EN VEN-H VEN-H ± VEN-HYS VEN-VCC-H VEN-VCC-L VCC 5V 0 VOUT VOUT 0 Figure 8-3. Precision Enable Behavior EN, 4V/Div VOUT, 2V/Div PG, 5V/Div Inductor Current, 2A/Div 2ms/Div Figure 8-4. Typical Start-up Behavior VIN = 12 V, VOUT = 5 V, IOUT = 2 A 8.3.3 Current Limit and Short Circuit The LMR33620 incorporates both peak and valley inductor current limit to provide protection to the device from overloads and short circuits and limit the maximum output current. Valley current limit prevents inductor current runaway during short circuits on the output, while both peak and valley limits work together to limit the maximum output current of the converter. Cycle-by-cycle current limit is used for overloads, while hiccup mode is used for sustained short circuits. Finally, a zero current detector is used on the low-side power MOSFET to implement DEM at light loads (see the Glossary). The typical value of this current limit is found under IZC in Section 7.5 . When the device is overloaded, the valley of the inductor current may not reach below I LIMIT (see Section 7.5) before the next clock cycle. When this occurs, the valley current limit control skips that cycle, causing the switching frequency to drop. Further overload causes the switching frequency to continue to drop, and the inductor ripple current to increase. When the peak of the inductor current reaches the high-side current limit, I SC (see Section 7.5), the switch duty cycle is reduced and the output voltage falls out of regulation. This represents the maximum output current from the converter and is given approximately by Equation 1. Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 13 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 IOUT max ILIMIT ISC 2 (1) If, during current limit, the voltage on the FB input falls below about 0.4 V due to a short circuit, the device enters into hiccup mode. In this mode, the device stops switching for t HC (see Section 7.7), or about 94 ms and then goes through a normal re-start with soft start. If the short-circuit condition remains, the device runs in current limit for about 20 ms (typical) and then shuts down again. This cycle repeats, as shown in Figure 8-5 as long as the short-circuit-condition persists. This mode of operation helps reduce the temperature rise of the device during a hard short on the output. The output current is greatly reduced during hiccup mode. Once the output short is removed and the hiccup delay is passed, the output voltage recovers normally as shown in Figure 8-6. Short Applied Short Removed VOUT, 2V/Div Inductor Current, 1A/Div 50ms/Div Inductor Current, 1A/Div 50ms/Div Figure 8-5. Inductor Current Burst in Short-Circuit Mode Figure 8-6. Short-Circuit Transient and Recovery 8.3.4 Undervoltage Lockout and Thermal Shutdown The LMR33620 incorporates an undervoltage-lockout feature on the output of the internal LDO (at the VCC pin). When VCC reaches about 3.7 V, the device is ready to receive an EN signal and start up. When VCC falls below about 3 V, the device shuts down, regardless of EN status. Because the LDO is in dropout during these transitions, the above values roughly represent the input voltage levels during the transitions. Thermal shutdown is provided to protect the regulator from excessive junction temperature. When the junction temperature reaches about 165°C the device shuts down; re-start occurs when the temperature falls to about 148°C. 8.4 Device Functional Modes 8.4.1 Auto Mode In auto mode, the device moves between PWM and PFM as the load changes. At light loads, the regulator operates in PFM. At higher loads, the mode changes to PWM. The load current for which the device moves from PFM to PWM can be found in Section 9.2.3. The output current at which the device changes modes depends on the input voltage, inductor value, and the nominal switching frequency. For output currents above the curve, the device is in PWM mode. For currents below the curve, the device is in PFM. The curves apply for and the BOMs shown in Table 9-3 and Table 9-4 and a nominal switching frequency of 400 kHz. At higher switching frequencies, the load at which the mode change occurs is greater. For applications where the switching frequency must be known for a given condition, the transition between PFM and PWM must be carefully tested before the design is finalized. In PWM mode, the regulator operates as a constant frequency converter using PWM to regulate the output voltage. While operating in this mode, the output voltage is regulated by switching at a constant frequency and modulating the duty cycle to control the power to the load. This provides excellent line and load regulation and low output voltage ripple. 14 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 In PFM, the high-side MOSFET is turned on in a burst of one or more pulses to provide energy to the load. The duration of the burst depends on how long it takes the inductor current to reach I PEAK-MIN. The periodicity of these bursts is adjusted to regulate the output, while diode emulation (DEM) is used to maximize efficiency (see the Glossary). This mode provides high light-load efficiency by reducing the amount of input supply current required to regulate the output voltage at light loads. PFM results in very good light-load efficiency, but also yields larger output voltage ripple and variable switching frequency. Also, a small increase in output voltage occurs at light loads. The actual switching frequency and output voltage ripple depends on the input voltage, output voltage, and load. Typical switching waveforms in PFM and PWM are shown in Figure 8-7 and Figure 8-8. See Section 9.2.3 for output voltage variation with load in auto mode. SW, 5V/Div SW, 5V/Div VOUT, 10mV/Div VOUT, 10mV/Div Inductor Current, 1A/Div Inductor Current, 0.5A/Div 2µs/Div 50µs/Div Figure 8-7. Typical PFM Switching Waveforms VIN = Figure 8-8. Typical PWM Switching Waveforms VIN = 12 V, VOUT = 5 V, IOUT = 2 A, ƒS = 400 kHz 12 V, VOUT = 5 V, IOUT = 10 mA 8.4.2 Dropout The dropout performance of any buck regulator is affected by the R DSON of the power MOSFETs, the DC resistance of the inductor and the maximum duty cycle that the controller can achieve. As the input voltage level approaches the output voltage, the off-time of the high-side MOSFET starts to approach the minimum value (see Section 7.6). Beyond this point, the switching can become erratic, and the output voltage falls out of regulation. To avoid this problem, the LMR33620 automatically reduces the switching frequency to increase the effective duty cycle and maintain regulation. In this data sheet, the dropout voltage is defined as the difference between the input and output voltage when the output has dropped by 1% of its nominal value. Under this condition, the switching frequency has dropped to its minimum value of about 140 kHz. Note that the 0.4 V short circuit detection threshold is not activated when in dropout mode. Typical dropout characteristics can be found in Figure 8-9, Figure 8-10, Figure 8-11, and Figure 8-12. Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 15 LMR33620 www.ti.com 6 0.3 5.5 0.25 Drop-out Voltage (V) Output Voltage (V) SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 5 4.5 4 0A 3.5 0.2 0.15 0.1 0.05 1A 5V 2A 0 3 4 4.5 5 5.5 6 6.5 0 7 0.5 1 1.5 2 2.5 Output Current (A) Input Voltage (V) C002 Figure 8-9. Overall Dropout Characteristic VOUT = 5 V 2.4 2.4 2.2 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 1A 0.2 C001 Figure 8-10. Typical Dropout Voltage versus Output Current in Frequency Foldback ƒSW = 140 kHz Switching Frequency (MHz) Switching Frequency (MHz) 3.3V 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 1A 0.2 2A 0 2A 0 3.5 4 4.5 5 5.5 6 6.5 Input Voltage (V) 7 7.5 8 3.5 Figure 8-11. Typical Switching Frequency in Dropout Mode VOUT = 3.3 V, fSW = 2.1 MHz 4 4.5 5 5.5 6 6.5 7 7.5 Input Voltage (V) C029 8 8.5 9 9.5 10 C028 Figure 8-12. Typical Switching Frequency in Dropout Mode VOUT = 5 V, fSW = 2.1 MHz 8.4.3 Minimum Switch On-Time Every switching regulator has a minimum controllable on-time dictated by the inherent delays and blanking times associated with the control circuits. This imposes a minimum switch duty cycle and, therefore, a minimum conversion ratio. The constraint is encountered at high input voltages and low output voltages. To help extend the minimum controllable duty cycle, the LMR33620 automatically reduces the switching frequency when the minimum on-time limit is reached. This way the converter can regulate the lowest programmable output voltage at the maximum input voltage. An estimate for the approximate input voltage, for a given output voltage, before frequency foldback occurs is found in Equation 2. The values of tON and f SW can be found in Section 7.5. As the input voltage is increased, the switch on-time (duty-cycle) reduces to regulate the output voltage. When the ontime reaches the limit, the switching frequency drops, while the on-time remains fixed. This relationship is highlighted in Figure 8-13 for a nominal switching frequency of 2.1 MHz. VIN d 16 VOUT t ON ˜ fSW (2) Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 2.6 Switching Frequency (MHz) 2.4 2.2 2 1.8 1.6 1.4 1A 1.2 2A 1 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 Input Voltage (V) C027 Figure 8-13. Switching Frequency versus Input Voltage VOUT = 3.3 V Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 17 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 9 Application and Implementation Note Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The LMR33620 step-down DC-to-DC converter is typically used to convert a higher DC voltage to a lower DC voltage with a maximum output current of 2 A. The following design procedure can be used to select components for the LMR33620. Alternately, the WEBENCH Design Tool can be used to generate a complete design. This tool utilizes an iterative design procedure and has access to a comprehensive database of components. This allows the tool to create an optimized design and allows the user to experiment with various options. Note In this data sheet, the effective value of capacitance is defined as the actual capacitance under D.C. bias and temperature; not the rated or nameplate values. Use high-quality, low-ESR, ceramic capacitors with an X5R or better dielectric throughout. All high value ceramic capacitors have a large voltage coefficient in addition to normal tolerances and temperature effects. Under D.C. bias the capacitance drops considerably. Large case sizes and/or higher voltage ratings are better in this regard. To help mitigate these effects, multiple capacitors can be used in parallel to bring the minimum effective capacitance up to the required value. This can also ease the RMS current requirements on a single capacitor. A careful study of bias and temperature variation of any capacitor bank should be made in order to ensure that the minimum value of effective capacitance is provided. 9.2 Typical Application Figure 9-1 shows a typical application circuit for the LMR33620. This device is designed to function over a wide range of external components and system parameters. However, the internal compensation is optimized for a certain range of external inductance and output capacitance. As a quick start guide, Figure 9-1 provides typical component values for a range of the most common output voltages. The values given in the table are typical. Other values can be used to enhance certain performance criterion as required by the application. Note that for the VQFN package, the input capacitors are split and placed on either side of the package; see Section 9.2.2.6 for more details. 18 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 L VIN 6 V to 36 V VOUT SW VIN 5V 2A 10 µH CIN CHF 10 µF CBOOT 220 nF COUT BOOT EN 4x 22 µF 0.1 µF RFBT CFF PG 100 NŸ PG 100 NŸ VCC CVCC 1 µF FB PGND AGND RFBB 24.9 NŸ Figure 9-1. Example Application Circuit (400 kHz) 9.2.1 Design Requirements Table 9-1 provides the parameters for our detailed design procedure example: Table 9-1. Detailed Design Parameters DESIGN PARAMETER EXAMPLE VALUE Input voltage 12 V (6 V to 36 V) Output voltage 5V Maximum output current 0 A to 2 A Switching frequency 400 kHz Table 9-2. Typical External Component Values ƒSW (kHz) VOUT (V) COUT (RATED L (µH) CAPACITANC E) RFBT (Ω) RFBB (Ω) CIN + CHF CBOOT CVCC CFF 400 3.3 10 4 × 22 µF 100 k 43.2 k 10 µF + 220 nF 100 nF 1 µF open 1400 3.3 2.2 2 × 22 µF 100 k 43.2 k 10 µF + 220 nF 100 nF 1 µF open 2100 3.3 1.2 2 × 22 µF 100 k 43.2 k 10 µF + 220 nF 100 nF 1 µF open 400 5 10 4 × 22 µF 100 k 24.9 k 10 µF + 220 nF 100 nF 1 µF open 1400 5 2.2 2 × 22 µF 100 k 24.9 k 10 µF + 220 nF 100 nF 1 µF open 2100 5 1.5 2 × 22 µF 100 k 24.9 k 10 µF + 220 nF 100 nF 1 µF open 400 12 27 4 × 22 µF 100 k 9.09 k 10 µF + 220 nF 100 nF 1 µF open 1400 12 4.7 4 × 10 µF 100 k 9.09 k 10 µF + 220 nF 100 nF 1 µF open 2100 12 3.3 4 × 10 µF 100 k 9.09 k 10 µF + 220 nF 100 nF 1 µF open 9.2.2 Detailed Design Procedure The following design procedure applies to Figure 9-1 and Table 9-1. 9.2.2.1 Custom Design With WEBENCH® Tools Click here to create a custom design using the LMR33620 device with the WEBENCH® Power Designer. 1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements. 2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial. 3. Compare the generated design with other possible solutions from Texas Instruments. Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 19 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time pricing and component availability. In most cases, these actions are available: • Run electrical simulations to see important waveforms and circuit performance • Run thermal simulations to understand board thermal performance • Export customized schematic and layout into popular CAD formats • Print PDF reports for the design, and share the design with colleagues Get more information about WEBENCH tools at www.ti.com/WEBENCH. 9.2.2.2 Choosing the Switching Frequency The choice of switching frequency is a compromise between conversion efficiency and overall solution size. Lower switching frequency implies reduced switching losses and usually results in higher system efficiency. However, higher switching frequency allows the use of smaller inductors and output capacitors, and hence a more compact design. For this example, 400 kHz was chosen. 9.2.2.3 Setting the Output Voltage The output voltage of the LMR33620is externally adjustable using a resistor divider network. The range of recommended output voltage is found in Section 7.3. The divider network is comprised of R FBT and R FBB, and closes the loop between the output voltage and the converter. The converter regulates the output voltage by holding the voltage on the FB pin equal to the internal reference voltage, VREF. The resistance of the divider is a compromise between excessive noise pick-up and excessive loading of the output. Smaller values of resistance reduce noise sensitivity but also reduce the light-load efficiency. The recommended value for R FBT is 100 kΩ; with a maximum value of 1 MΩ. If a 1 MΩ is selected for R FBT, then a feedforward capacitor must be used across this resistor to provide adequate loop phase margin (see Section 9.2.2.9). Once R FBT is selected, Equation 3 is used to select RFBB. VREF is nominally 1 V (see Section 7.5 for limits). RFBB RFBT ª VOUT « ¬ VREF º 1» ¼ (3) For this 5-V example, RFBT = 100 kΩ and RFBB = 24.9 kΩ are chosen. 9.2.2.4 Inductor Selection The parameters for selecting the inductor are the inductance and saturation current. The inductance is based on the desired peak-to-peak ripple current and is normally chosen to be in the range of 20% to 40% of the maximum output current. Experience shows that the best value for inductor ripple current is 30% of the maximum load current. Note that when selecting the ripple current for applications with much smaller maximum load than the maximum available from the device, the maximum device current should be used. Equation 4 can be used to determine the value of inductance. The constant K is the percentage of inductor current ripple. For this example, K = 0.3 was chosen and an inductance was found; the next standard value of 10 µH was selected. L VIN VOUT V ˜ OUT fSW ˜ K ˜ IOUT max VIN (4) Ideally, the saturation current rating of the inductor must be at least as large as the high-side switch current limit, I SC (see Section 7.5). This ensures that the inductor does not saturate even during a short circuit on the output. When the inductor core material saturates, the inductance falls to a very low value, causing the inductor current to rise very rapidly. Although the valley current limit, I LIMIT, is designed to reduce the risk of current run-away, a saturated inductor can cause the current to rise to high values very rapidly. This can lead to component damage; do not allow the inductor to saturate. Inductors with a ferrite core material have very hard saturation characteristics, but usually have lower core losses than powdered iron cores. Powered iron cores exhibit a soft saturation, allowing for some relaxation in the current rating of the inductor. However, they have more core losses at frequencies typically above 1 MHz. In any case, the inductor saturation current must not be less than 20 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 the device low-side current limit, I LIMIT (see Section 7.5). The maximum inductance is limited by the minimum current ripple required for the current mode control to perform correctly. As a rule-of-thumb, the minimum inductor ripple current must be no less than about 10% of the device maximum rated current under nominal conditions. LMIN t 0.36 ˜ VOUT fSW (5) 9.2.2.5 Output Capacitor Selection The value of the output capacitor and the ESR of the capacitor determine the output voltage ripple and load transient performance. The output capacitor bank is usually limited by the load transient requirements, rather than the output voltage ripple. Equation 6 can be used to estimate a lower bound on the total output capacitance and an upper bound on the ESR, which is required to meet a specified load transient. COUT t ESR d D fSW º K2 ˜ 2 D» 12 »¼ ª 'IOUT ˜«1 D ˜ 1 K ˜ 'VOUT ˜ K ¬« 2 K ˜ 'VOUT ª 2 ˜ 'IOUT «1 K ¬« K2 12 § 1 ·º ¸¸» ˜ ¨¨1 © (1 D) ¹¼» VOUT VIN (6) where • • • ΔVOUT = output voltage transient ΔIOUT = output current transient K = ripple factor from Section 9.2.2.4 Once the output capacitor and ESR have been calculated, Equation 7 can be used to check the peak-to-peak output voltage ripple; Vr. Vr # 'IL ˜ ESR 2 1 8 ˜ fSW ˜ COUT 2 (7) The output capacitor and ESR can then be adjusted to meet both the load transient and output ripple requirements. For this example, a ΔV OUT ≤ 250 mV for an output current step of ΔI OUT = 2 A is required. Equation 6 gives a minimum value of 45 µF and a maximum ESR of 0.11 Ω. Assuming a 20% tolerance and a 10% bias de-rating, you arrive at a minimum capacitance of 63 µF. This can be achieved with a bank of 4 × 22-µF, 16-V ceramic capacitors in the 1210 case size. More output capacitance can be used to improve the load transient response. Ceramic capacitors can easily meet the minimum ESR requirements. In some cases, an aluminum electrolytic capacitor can be placed in parallel with the ceramics to help build up the required value of capacitance. In general, use a capacitor of at least 10 V for output voltages of 3.3 V or less and a capacitor of 16 V or more for output voltages of 5 V and above. In practice, the output capacitor has the most influence on the transient response and loop phase margin. Load transient testing and Bode plots are the best way to validate any given design and must always be completed before the application goes into production. In addition to the required output capacitance, a small ceramic placed on the output can help reduce high frequency noise. Small case size ceramic capacitors in the range of 1 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 21 LMR33620 SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 www.ti.com nF to 100 nF can be very helpful in reducing voltage spikes on the output caused by inductor and board parasitics. The maximum value of total output capacitance must be limited to about 10 times the design value, or 1000 µF, whichever is smaller. Large values of output capacitance can adversely affect the start-up behavior of the regulator as well as the loop stability. If values larger than noted here must be used, then a careful study of startup at full load and loop stability must be performed. 9.2.2.6 Input Capacitor Selection The ceramic input capacitors provide a low impedance source to the regulator in addition to supplying the ripple current and isolating switching noise from other circuits. A minimum of 10 µF of ceramic capacitance is required on the input of the LMR33620. This must be rated for at least the maximum input voltage that the application requires; preferably twice the maximum input voltage. This capacitance can be increased to help reduce input voltage ripple and maintain the input voltage during load transients. In addition, a small case size, 220-nF ceramic capacitor must be used at the input, as close a possible to the regulator. This provides a high frequency bypass for the control circuits internal to the device. For this example a 4.7-µF, 50-V, X7R (or better) ceramic capacitor is chosen. The 220 nF must also be rated at 50 V with an X7R dielectric. The VQFN (RNX) package provides two input voltage pins and two power ground pins on opposite sides of the package. This allows the input capacitors to be split, and placed optimally with respect to the internal power MOSFETs, thus improving the effectiveness of the input bypassing. In this example, a single 4.7-µF and two 100-nF ceramic capacitors at each VIN/PGND location. Many times, it is desirable to use an electrolytic capacitor on the input in parallel with the ceramics. This is especially true if long leads/traces are used to connect the input supply to the regulator. The moderate ESR of this capacitor can help damp any ringing on the input supply caused by the long power leads. The use of this additional capacitor also helps with momentary voltage dips caused by input supplies with unusually high impedance. Most of the input switching current passes through the ceramic input capacitor or capacitors. The approximate worst case RMS value of this current can be calculated from Equation 8 and must be checked against the manufacturers' maximum ratings. IRMS # IOUT 2 (8) 9.2.2.7 CBOOT The LMR33620 requires a bootstrap capacitor connected between the BOOT pin and the SW pin. This capacitor stores energy that is used to supply the gate drivers for the power MOSFETs. A high-quality ceramic capacitor of 100 nF and at least 10 V is required. 9.2.2.8 VCC The VCC pin is the output of the internal LDO used to supply the control circuits of the regulator. This output requires a 1-µF, 16-V ceramic capacitor connected from VCC to GND for proper operation. In general, avoid loading this output with any external circuitry. However, this output can be used to supply the pullup for the power-good function (see Section 8.3.1). A value of 100 kΩ is a good choice in this case. The nominal output voltage on VCC is 5 V; see Section 7.5 for limits. Do not short this output to ground or any other external voltage. 9.2.2.9 CFF Selection In some cases, a feedforward capacitor can be used across R FBT to improve the load transient response or improve the loop-phase margin. This is especially true when values of R FBT > 100 kΩ are used. Large values of R FBT, in combination with the parasitic capacitance at the FB pin, can create a small signal pole that interferes with the loop stability. A CFF can help to mitigate this effect. Equation 9 can be used to estimate the value of CFF. The value found with Equation 9 is a starting point; use lower values to determine if any advantage is gained by the use of a C FF capacitor. The Optimizing Transient Response of Internally Compensated DC-DC Converters with Feed-forward Capacitor Application Report is helpful when experimenting with a feedforward capacitor. 22 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 VOUT ˜ COUT CFF 120 ˜ RFBT ˜ VREF VOUT (9) 9.2.2.10 External UVLO In some cases, an input UVLO level different than that provided internal to the device is needed. This can be accomplished by using the circuit shown in Figure 9-2. The input voltage at which the device turns on is designated V ON; while the turnoff voltage is V OFF. First, a value for R ENB is chosen in the range of 10 kΩ to 100 kΩ and then Equation 10 is used to calculate RENT and VOFF. VIN RENT EN RENB Figure 9-2. Setup for External UVLO Application R ENT § V ON ¨¨ © VEN H · 1¸¸ ˜ R ENB ¹ V OFF § V ON ˜ ¨¨ 1 © VEN HYS VEN H · ¸¸ ¹ (10) where • • VON = VIN turnon voltage VOFF = VIN turnoff voltage 9.2.2.11 Maximum Ambient Temperature As with any power conversion device, the LMR33620 dissipates internal power while operating. The effect of this power dissipation is to raise the internal temperature of the converter above ambient. The internal die temperature (T J) is a function of the ambient temperature, the power loss and the effective thermal resistance, R θJA of the device and PCB combination. The maximum internal die temperature for the LMR33620 must be limited to 125°C. This establishes a limit on the maximum device power dissipation and therefore the load current. Equation 11 shows the relationships between the important parameters. It is easy to see that larger ambient temperatures (T A) and larger values of R θJA reduce the maximum available output current. The converter efficiency can be estimated by using the curves provided in this data sheet. If the desired operating conditions cannot be found in one of the curves, then interpolation can be used to estimate the efficiency. Alternatively, the EVM can be adjusted to match the desired application requirements and the efficiency can be measured directly. The correct value of R θJA is more difficult to estimate. As stated in the Semiconductor and IC Package Thermal Metrics Application Report, the value of R θJA given in Section 7.4 is not valid for design purposes and must not be used to estimate the thermal performance of the application. The values reported in that table were measured under a specific set of conditions that are rarely obtained in an actual application. IOUT MAX TJ TA 1 K ˜ ˜ R TJA 1 K VOUT (11) where • η = efficiency Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 23 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 The effective R θJA is a critical parameter and depends on many factors such as power dissipation, air temperature/flow, PCB area, copper heat-sink area, number of thermal vias under the package, and adjacent component placement; to mention just a few. The HSOIC (DDA) package utilizes a die attach paddle, or thermal pad (PAD) to provide a place to solder down to the PCB heat-sinking copper. This provides a good heat conduction path from the regulator junction to the heat sink and must be properly soldered to the PCB heat sink copper. Due to the ultra-miniature size of the VQFN (RNX) package, a DAP is not available. This means that this package exhibits a somewhat large value R θJA. Typical examples of R θJA vs copper board area can be found in Figure 9-3 and Figure 9-4. The copper area given in the graph is for each layer; the top and bottom layers are 2 oz. copper each, while the inner layers are 1 oz. Typical curves of maximum output current vs ambient temperature are shown in Figure 9-5 and Figure 9-6 . This data was taken with a device/PCB combination giving an R θJA as noted in the graph. It must be remembered that the data given in these graphs are for illustration purposes only, and the actual performance in any given application depends on all of the previously mentioned factors. 70 44 42 65 40 32 JA (ƒC/w) 36 30 R R JA (ƒC/W) 38 34 60 55 50 28 26 45 24 22 RNX, 4L DDA, 4L 40 20 0 10 20 30 40 Copper Area 50 (cm2) 60 0 70 20 30 40 50 Copper Area (cm2) 60 70 C005 C003 Figure 9-3. Typical RθJA versus Copper Area for a Four-Layer Board and the HSOIC (DDA) Package Figure 9-4. RθJA versus Copper Board Area for the VQFN (RNX) Package 3 2.5 2.5 Maximum Output Current (A) Maximum Output Current (A) 10 2 1.5 1 0.5 0 2 1.5 1 0.5 0 20 30 40 50 60 70 80 90 100 110 120 130 140 Ambient Temperature (ƒC) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Ambient Termperature (ƒC) C004 C007 VIN = 12 V VOUT = 5 V VIN = 12 V VOUT = 5 V ƒSW = 400 kHz RθJA = 30°C/W ƒSW = 400 kHz RθJA = 50°C/W Figure 9-5. Maximum Output Current versus Ambient Temperature Figure 9-6. Maximum Output Current versus Ambient Temperature Use the following resources as a guide to optimal thermal PCB design and estimating R θJA for a given application environment: • • • 24 Thermal Design by Insight not Hindsight A Guide to Board Layout for Best Thermal Resistance for Exposed Pad Packages Semiconductor and IC Package Thermal Metrics Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com • • • • SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 Thermal Design Made Simple with LM43603 and LM43602 PowerPAD™ Thermally Enhanced Package PowerPAD™ Made Easy Using New Thermal Metrics Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 25 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 9.2.3 Application Curves 100 100 95 95 90 90 85 85 80 80 Efficiency (%) Efficiency (%) Unless otherwise specified the following conditions apply: V IN = 12 V, T A = 25°C. The circuit is shown in Figure 9-31, with the appropriate BOM from Table 9-3 or Table 9-4. 75 70 65 8V 60 75 70 65 55 55 12V 50 24V 50 24V 45 45 36V 40 0.001 0.01 0.1 1 VOUT = 5 V 400 kHz 0.1 1 10 Output Current (A) DDA Package VOUT = 3.3 V 400 kHz C017 DDA Package Figure 9-8. Efficiency 100 100 95 95 90 90 85 85 80 80 Efficiency (%) Efficiency (%) 0.01 C016 Figure 9-7. Efficiency 75 70 65 8V 60 75 70 65 5V 60 55 12V 55 12V 50 24V 50 24V 45 45 36V 40 0.001 0.01 0.1 1 VOUT = 5 V 1.4 MHz 36V 40 0.001 10 Output Current (A) 0.01 0.1 1 10 Output Current (A) C013 DDA Package VOUT = 3.3 V Figure 9-9. Efficiency 1.4 MHz C014 DDA Package Figure 9-10. Efficiency 100 100 95 95 90 90 85 85 80 80 Efficiency (%) Efficiency (%) 36V 40 0.001 10 Output Current (A) 75 70 65 8V 60 75 70 65 5V 60 55 12V 55 12V 50 24V 50 24V 45 45 36V 40 0.001 0.01 VOUT = 5 V 0.1 Output Current (A) 2.1 MHz 1 10 40 0.001 DDA Package 36V 0.01 0.1 Output Current (A) C009 VOUT = 3.3 V Figure 9-11. Efficiency 26 5V 60 12V 2.1 MHz 1 10 C010 DDA Package Figure 9-12. Efficiency Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 100 100 95 95 90 90 85 85 Efficiency (%) Efficiency (%) www.ti.com 80 75 70 8V 65 0.01 0.1 1 VOUT = 5 V 400 kHz RNX Package 90 85 85 Efficiency (%) Efficiency (%) 95 90 80 75 70 8V 65 60 1 75 70 36V 0.01 0.1 1 10 1.4 MHz C021 RNX Package Figure 9-16. Efficiency 100 95 90 90 85 85 Efficiency (%) Efficiency (%) 24V VOUT = 3.3 V RNX Package 95 80 75 70 8V 65 70 5V 12V 24V 55 36V 1 75 60 24V 55 80 65 12V 60 2.1 MHz 12V Output Current (A) 100 VOUT = 5 V 5V C022 Figure 9-15. Efficiency 0.1 C019 80 50 0.001 10 Output Current (A) Output Current (A) 10 RNX Package 55 36V 0.01 400 kHz 60 24V 55 50 0.001 1 65 12V 1.4 MHz 0.1 Figure 9-14. Efficiency 100 VOUT = 5 V 0.01 VOUT = 3.3 V 95 0.1 36V Output Current (A) 100 0.01 24V C018 Figure 9-13. Efficiency 50 0.001 12V 50 0.001 10 Output Current (A) 5V 55 36V 50 0.001 70 60 24V 55 75 65 12V 60 80 10 50 0.001 0.01 0.1 Output Current (A) C020 RNX Package 36V VOUT = 3.3 V 2.1 MHz 1 10 C023 RNX Package Figure 9-18. Efficiency Figure 9-17. Efficiency Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 27 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 34 5.055 8V 5.045 12V 5.04 24V 5.035 36V 32 Input Supply Current (µA) Output Voltage (V) 5.05 5.03 5.025 5.02 5.015 5.01 30 28 26 24 22 5.005 5V 5 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Output Current (A) 5 2 10 15 20 25 30 35 40 Input Voltage (V) C011 VOUT = 5 V VOUT = 5 V Figure 9-19. Line and Load Regulation C016 RFBT = 1 MΩ IOUT = 0 A Figure 9-20. Input Supply Current 10000000 0.25 Switching Frequency (Hz) 1000000 0.15 X PWM 0.1 PFM X Output Current (A) 0.2 0.05 100000 10000 1000 12V 10 24V 36V 5V 0 0 5 10 15 20 25 30 35 Input Voltage (V) VOUT = 5 V 8V 100 1 0.00001 40 0.0001 0.001 0.01 0.1 1 Output Current (A) C014 C005 ƒSW = 400 kHz Figure 9-21. Mode Change Thresholds VOUT, 300mV/Div VOUT = 5 V ƒSW = 400 kHz Figure 9-22. Switching Frequency versus Output Current VOUT, 300mV/Div Output Current, 0.5A/Div Output Current, 0.5A/Div 100µs/Div VIN = 12 V VOUT = 5 V tf = tr = 2 µs IOUT = 0 A to 2 A 100µs/Div VIN = 12 V tf = tr = 2 µs VOUT = 5 V IOUT = 1 A to 2 A Figure 9-24. Load Transient Figure 9-23. Load Transient 28 10 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 34 3.345 5V 32 12V 24V 3.33 36V Input Supply Current (µA) Output Voltage (V) 3.34 3.335 3.325 3.32 3.315 30 28 26 24 22 3.31 3.3V 3.305 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Output Current (A) 5 2 VOUT = 3.3 V 1000000 Switching Frequency (Hz) 0.30 0.25 0.20 X PWM PFM 10 15 20 25 30 35 Input Voltage (V) VOUT = 3.3 V 35 40 C015 IOUT = 0 A RFBT = 1 MΩ 10000 1000 5V 100 12V 10 24V 36V 3.3V 5 30 100000 X Output Current (A) 10000000 0.00 0 25 Figure 9-26. Input Supply Current 0.35 0.05 20 Input Voltage (V) Figure 9-25. Line and Load Regulation 0.10 15 C012 VOUT = 3.3 V 0.15 10 1 0.00001 40 0.0001 0.001 0.01 0.1 1 Output Current (A) 10 C015 C006 ƒSW = 400 kHz Figure 9-27. Mode Change Thresholds VOUT, 300mV/Div VOUT = 3.3 V ƒSW = 400 kHz Figure 9-28. Switching Frequency versus Output Current VOUT, 300mV/Div Output Current, 0.5A/Div Output Current, 0.5A/Div 0 100µs/Div VIN = 12 V VOUT = 3.3 V tf = tr = 2 µs IOUT = 0 A to 2 A 100µs/Div VIN = 12 V VOUT = 3.3 V IOUT = 1 A to 2 A tf = tr = 2 µs Figure 9-30. Load Transient Figure 9-29. Load Transient Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 29 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 L VIN VIN VOUT SW U1 CBOOT CIN CHF COUT BOOT EN 0.1 µF RFBT PG 100 NŸ PG 100 NŸ VCC CVCC 1 µF FB PGND AGND RFBB Figure 9-31. Circuit for Application Curves Table 9-3. BOM for Typical Application Curves DDA Package VOUT (1) (1) FREQUENCY RFBB COUT CIN + CHF L U1 3.3 V 400 kHz 43.3 kΩ 4 × 22 µF 1 × 10 µF + 1 × 220 nF 6.8 µH, 14 mΩ LMR33620ADDA 3.3 V 1400 KHz 43.3 kΩ 4 × 22 µF 1 × 10 µF + 1 × 220 nF 2.2 µH, 11.4 mΩ LMR33620BDDA 3.3 V 2100 kHz 43.3 kΩ 4 × 22 µF 1 × 10 µF + 1 × 220 nF 1.2 µH, 16 mΩ LMR33620CDDA 5V 400 kHz 24.9 kΩ 4 × 22 µF 1 × 10 µF + 1 × 220 nF 8.2 µH, 14 mΩ LMR33620ADDA 5V 1400 KHz 24.9 kΩ 4 × 22 µF 1 × 10 µF + 1 × 220 nF 2.2 µH, 11.4 mΩ LMR33620BDDA 5V 2100 kHz 24.9 kΩ 4 × 22 µF 1 × 10 µF + 1 × 220 nF 1.5 µH, 8.2 mΩ LMR33620CDDA The values in this table were selected to enhance certain performance criteria and may not represent typical values. Table 9-4. BOM for Typical Application Curves RNX Package VOUT (1) (1) FREQUENCY RFBB COUT CIN + CHF L U1 3.3 V 400 kHz 43.3 kΩ 4 × 22 µF 2 × 4.7 µF + 2 × 100 nF 4.7 µH, 28 mΩ LMR33620ARNX 3.3 V 1400 KHz 43.3 kΩ 4 × 22 µF 2 × 4.7 µF + 2 × 100 nF 2.2 µH, 11.4 mΩ LMR33620BRNX 3.3 V 2100 kHz 43.3 kΩ 4 × 22 µF 2 × 4.7 µF + 2 × 100 nF 2.2 µH, 11.4 mΩ LMR33620CRNX 5V 400 kHz 24.9 kΩ 4 × 22 µF 2 × 4.7 µF + 2 × 100 nF 6.8 µH, 14 mΩ LMR33620ARNX 5V 1400 KHz 24.9 kΩ 4 × 22 µF 2 × 4.7 µF + 2 × 100 nF 2.2 µH, 11.4 mΩ LMR33620BRNX 5V 2100 kHz 24.9 kΩ 4 × 22 µF 2 × 4.7 µF + 2 × 100 nF 2.2 µH, 11.4 mΩ LMR33620CRNX The values in this table were selected to enhance certain performance criteria and may not represent typical values. 9.3 What to Do and What Not to Do • • • • • • • 30 Don't: Exceed the Absolute Maximum Ratings. Don't: Exceed the ESD Ratings. Don't: Exceed the Recommended Operating Conditions. Don't: Allow the EN input to float. Don't: Allow the output voltage to exceed the input voltage, nor go below ground. Don't: Use the value of RθJA given in the Section 7.4 table to design your application. Use the information in Section 9.2.2.11. Do: Follow all the guidelines and suggestions found in this data sheet before committing the design to production. TI application engineers are ready to help critique your design and PCB layout to help make your project a success (see Support Resources). Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 www.ti.com LMR33620 SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 Power Supply Recommendations The characteristics of the input supply must be compatible with the Absolute Maximum Ratings and Recommended Operating Conditions found in this data sheet. In addition, the input supply must be capable of delivering the required input current to the loaded regulator. The average input current can be estimated with Equation 12, where η is the efficiency. IIN VOUT ˜ IOUT VIN ˜ K (12) If the regulator is connected to the input supply through long wires or PCB traces, special care is required to achieve good performance. The parasitic inductance and resistance of the input cables can have an adverse effect on the operation of the regulator. The parasitic inductance, in combination with the low-ESR, ceramic input capacitors, can form an under damped resonant circuit, resulting in overvoltage transients at the input to the regulator. The parasitic resistance can cause the voltage at the VIN pin to dip whenever a load transient is applied to the output. If the application is operating close to the minimum input voltage, this dip can cause the regulator to momentarily shutdown and reset. The best way to solve these kind of issues is to reduce the distance from the input supply to the regulator and/or use an aluminum or tantalum input capacitor in parallel with the ceramics. The moderate ESR of these types of capacitors help damp the input resonant circuit and reduce any overshoots. A value in the range of 20 µF to 100 µF is usually sufficient to provide input damping and help to hold the input voltage steady during large load transients. Sometimes, for other system considerations, an input filter is used in front of the regulator. This can lead to instability, as well as some of the effects mentioned above, unless it is designed carefully. The user guide AN-2162 Simple Success With Conducted EMI From DCDC Converters provides helpful suggestions when designing an input filter for any switching regulator. In some cases, a transient voltage suppressor (TVS) is used on the input of regulators. One class of this device has a snap-back characteristic (thyristor type). The use of a device with this type of characteristic is not recommended. When the TVS fires, the clamping voltage falls to a very low value. If this voltage is less than the output voltage of the regulator, the output capacitors discharge through the device back to the input. This uncontrolled current flow can damage the device. The input voltage must not be allowed to fall below the output voltage. In this scenario, such as a shorted input test, the output capacitors discharges through the internal parasitic diode found between the VIN and SW pins of the device. During this condition, the current can become uncontrolled, possibly causing damage to the device. If this scenario is considered likely, then a Schottky diode between the input supply and the output should be used. Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 31 LMR33620 SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 www.ti.com 10 Layout 10.1 Layout Guidelines The PCB layout of any DC/DC converter is critical to the optimal performance of the design. Bad PCB layout can disrupt the operation of an otherwise good schematic design. Even if the converter regulates correctly, bad PCB layout can mean the difference between a robust design and one that cannot be mass produced. Furthermore, the EMI performance of the regulator is dependent on the PCB layout, to a great extent. In a buck converter, the most critical PCB feature is the loop formed by the input capacitor or input capacitors, and power ground, as shown in Figure 10-1. This loop carries large transient currents that can cause large transient voltages when reacting with the trace inductance. These unwanted transient voltages will disrupt the proper operation of the converter. Because of this, the traces in this loop must be wide and short, and the loop area as small as possible to reduce the parasitic inductance. Figure 10-2 and Figure 10-3 show recommended layouts for the critical components of the LMR33620. 1. Place the input capacitor or capacitors as close as possible to the VIN and GND terminals. VIN and GND pins are adjacent, simplifying the input capacitor placement. With the VQFN package there are two VIN/ PGND pairs on either side of the package. This provides for a symmetrical layout and helps minimize switching noise and EMI generation. A wide VIN plane must be used on a lower layer to connect both of the VIN pairs together to the input supply; see Figure 10-3. 2. Place bypass capacitor for VCC close to the VCC pin. This capacitor must be placed close to the device and routed with short, wide traces to the VCC and GND pins. 3. Use wide traces for the CBOOT capacitor. Place CBOOT close to the device with short/wide traces to the BOOT and SW pins. For the VQFN package, it is important to route the SW connection under the device to the NC pin, and use this path to connect the BOOT capacitor to SW. 4. Place the feedback divider as close as possible to the FB pin of the device. Place RFBB, RFBT, and CFF, if used, physically close to the device. The connections to FB and GND must be short and close to those pins on the device. The connection to VOUT can be somewhat longer. However, this latter trace must not be routed near any noise source (such as the SW node) that can capacitively couple into the feedback path of the regulator. 5. Use at least one ground plane in one of the middle layers. This plane acts as a noise shield and also act as a heat dissipation path. 6. Connect the thermal pad to the ground plane. The SOIC package has a thermal pad (PAD) connection that must be soldered down to the PCB ground plane. This pad acts as a heat-sink connection and an electrical ground connection for the regulator. The integrity of this solder connection has a direct bearing on the total effective RθJA of the application. 7. Provide wide paths for VIN, VOUT, and GND. Making these paths as wide and direct as possible reduces any voltage drops on the input or output paths of the converter and maximizes efficiency. 8. Provide enough PCB area for proper heat sinking. As stated in Section 9.2.2.11, enough copper area must be used to ensure a low RθJA, commensurate with the maximum load current and ambient temperature. Make the top and bottom PCB layers with two-ounce copper; and no less than one ounce. With the SOIC package, use an array of heat-sinking vias to connect the thermal pad (PAD) to the ground plane on the bottom PCB layer. If the PCB design uses multiple copper layers (recommended), thermal vias can also be connected to the inner layer heat-spreading ground planes. 9. Keep switch area small. Keep the copper area connecting the SW pin to the inductor as short and wide as possible. At the same time the total area of this node should be minimized to help reduce radiated EMI. See the following PCB layout resources for additional important guidelines: • • • • 32 Layout Guidelines for Switching Power Supplies Simple Switcher PCB Layout Guidelines Construction Your Power Supply- Layout Considerations Low Radiated EMI Layout Made Simple with LM4360x and LM4600x Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 VIN KEEP CURRENT LOOP SMALL CIN SW GND Figure 10-1. Current Loops with Fast Edges 10.1.1 Ground and Thermal Considerations As mentioned above, TI recommends using one of the middle layers as a solid ground plane. A ground plane provides shielding for sensitive circuits and traces. It also provides a quiet reference potential for the control circuitry. The AGND and PGND pins must be connected to the ground planes using vias next to the bypass capacitors. PGND pins are connected directly to the source of the low side MOSFET switch, and also connected directly to the grounds of the input and output capacitors. The PGND net contains noise at the switching frequency and can bounce due to load variations. The PGND trace, as well as the VIN and SW traces, must be constrained to one side of the ground planes. The other side of the ground plane contains much less noise and must be used for sensitive routes. TI recommends providing adequate device heat sinking by utilizing the thermal pad (PAD) of the device as the primary thermal path. Use a minimum 4 × 3 array of 10-mil thermal vias to connect the PAD to the system ground plane heat sink. The vias must be evenly distributed under the PAD. Use as much copper as possible, for system ground plane, on the top and bottom layers for the best heat dissipation. Use a four-layer board with the copper thickness for the four layers, starting from the top as: 2 oz / 1 oz / 1 oz / 2 oz. A four-layer board with enough copper thickness, and proper layout, provides low current conduction impedance, proper shielding, and lower thermal resistance. Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 33 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 10.2 Layout Example GND HEATSINK INDUCTOR VOUT COUT COUT CBOOT COUT CHF GND CIN VIN EN CVCC PGOOD RFBT RFBB GND GND HEATSINK Top Trace Bottom Trace VIA Ground Plane VIA Bottom Figure 10-2. Example Layout for HSOIC (DDA) Package 34 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 VOUT VOUT INDUCTOR COUT COUT COUT COUT GND GND CIN CIN CHF 12 11 2 10 3 9 4 8 5 6 VIN EN PGOOD 7 RFBT CBOOT 1 VIN CHF CVCC RFBB GND HEATSINK GND HEATSINK INNER GND PLANE Top Trace/Plane Inner GND Plane VIN Strap on Inner Layer Top VIA to Signal Layer Inner GND Plane VIA to GND Planes VIN Strap and GND Plane Signal traces and GND Plane VIA to VIN Strap Trace on Signal Layer Figure 10-3. Example Layout for VQFN Package Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 35 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 11 Device and Documentation Support 11.1 Device Support 11.1.1 Development Support 11.1.1.1 Custom Design With WEBENCH® Tools Click here to create a custom design using the LM33620 device with the WEBENCH® Power Designer. 1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements. 2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial. 3. Compare the generated design with other possible solutions from Texas Instruments. The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time pricing and component availability. In most cases, these actions are available: • Run electrical simulations to see important waveforms and circuit performance • Run thermal simulations to understand board thermal performance • Export customized schematic and layout into popular CAD formats • Print PDF reports for the design, and share the design with colleagues Get more information about WEBENCH tools at www.ti.com/WEBENCH. 11.2 Documentation Support 11.2.1 Related Documentation For related documentation see the following: • Thermal Design by Insight not Hindsight • A Guide to Board Layout for Best Thermal Resistance for Exposed Pad Packages • Semiconductor and IC Package Thermal Metrics • Thermal Design Made Simple with LM43603 and LM43602 • PowerPADTM Thermally Enhanced Package • PowerPADTM Made Easy • Using New Thermal Metrics • Layout Guidelines for Switching Power Supplies • Simple Switcher PCB Layout Guidelines • Construction Your Power Supply- Layout Considerations • Low Radiated EMI Layout Made Simple with LM4360x and LM4600x 11.3 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Subscribe to updates to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 11.4 Support Resources TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. 36 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 LMR33620 www.ti.com SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 11.5 Trademarks HotRod™, TI E2E™ are trademarks of Texas Instruments. PowerPAD™ is a trademark of TI. WEBENCH® is a registered trademark of Texas Instruments. SIMPLE SWITCHER® is a registered trademark of Texas Instruments. All trademarks are the property of their respective owners. 11.6 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.7 Glossary TI Glossary This glossary lists and explains terms, acronyms, and definitions. Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 37 LMR33620 SNVSAW1E – FEBRUARY 2018 – REVISED NOVEMBER 2020 www.ti.com Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 38 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: LMR33620 PACKAGE OPTION ADDENDUM www.ti.com 29-Jun-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) LMR33620ADDA ACTIVE SO PowerPAD DDA 8 75 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 33620A LMR33620ADDAR ACTIVE SO PowerPAD DDA 8 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 33620A LMR33620ARNXR ACTIVE VQFN-HR RNX 12 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 33620A LMR33620ARNXT ACTIVE VQFN-HR RNX 12 250 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 33620A LMR33620BDDA ACTIVE SO PowerPAD DDA 8 75 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 33620B LMR33620BDDAR ACTIVE SO PowerPAD DDA 8 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 33620B LMR33620BRNXR ACTIVE VQFN-HR RNX 12 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 33620B LMR33620BRNXT ACTIVE VQFN-HR RNX 12 250 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 33620B LMR33620CDDA ACTIVE SO PowerPAD DDA 8 75 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 33620C LMR33620CDDAR ACTIVE SO PowerPAD DDA 8 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 33620C LMR33620CRNXR ACTIVE VQFN-HR RNX 12 3000 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 33620C LMR33620CRNXT ACTIVE VQFN-HR RNX 12 250 RoHS & Green NIPDAU | SN Level-2-260C-1 YEAR -40 to 125 33620C (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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