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LMV551, LMV552, LMV554
SNOSAQ5H – FEBRUARY 2007 – REVISED AUGUST 2016
LMV55x 3-MHz, Micropower RRO Amplifiers
1 Features
3 Description
•
•
•
•
•
•
•
•
•
The LMV55x are high-performance, low-power
operational amplifiers implemented with TI’s
advanced VIP50 process. They feature 3 MHz of
bandwidth while consuming only 37 µA of current per
amplifier, which is an exceptional bandwidth to power
ratio in this op amp class. These ultra-low power
amplifiers are unity gain stable and provide an
excellent solution for ultra-low power applications
requiring a wide bandwidth.
1
Specified 3-V and 5-V Performance
High Unity Gain Bandwidth 3 MHz
Supply Current (Per Amplifier) 37 µA
CMRR 93 dB
PSRR 90 dB
Slew Rate 1 V/µs
Output Swing With 100-kΩ Load 70 mV From Rail
Total Harmonic Distortion: 0.003% at 1 kHz, 2 kΩ
Temperature Range: −40°C to 125°C
2 Applications
•
•
•
•
•
The LMV55x have a rail-to-rail output stage and an
input common mode range that extends below
ground.
The LMV55x have an operating supply voltage range
from 2.7 V to 5.5 V. These amplifiers can operate
over a wide temperature range (−40°C to 125°C),
making them a great choice for automotive
applications, sensor applications as well as portable
instrumentation applications. The LMV551 is offered
in the ultra tiny 5-Pin SC70 and 5-Pin SOT-23
package. The LMV552 is offered in an 8-Pin VSSOP
package. The LMV554 is offered in the 14-Pin
TSSOP.
Active Filters
Portable Equipment
Automotive
Battery Powered Systems
Sensors and Instrumentation
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
SOT-23 (5)
2.90 mm × 1.60 mm
SC70 (5)
2.00 mm × 1.25 mm
LMV552
VSSOP (8)
3.00 mm × 3.00 mm
LMV554
TSSOP (14)
5.00 mm × 4.40 mm
LM551
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application Schematic
CF
CC1
R1
1 NŸ
Open Loop Gain and Phase vs Frequency
R2
100 NŸ
120
120
100
100
PHASE
80
80
RB1
+
+
VOUT
-
V+
60
60
GAIN
40
40
20
20
0
0
RB2
-20
-20
Copyright © 2016, Texas Instruments Incorporated
VS = 5V
-40
100
1k
PHASE (°)
VIN
-
GAIN (dB)
+
10k
100k
1M
-40
10M
FREQUENCY (Hz)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LMV551, LMV552, LMV554
SNOSAQ5H – FEBRUARY 2007 – REVISED AUGUST 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
5
6.1
6.2
6.3
6.4
6.5
6.6
6.7
5
5
5
5
6
7
9
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics: 3 V ...................................
Electrical Characteristics: 5 V ...................................
Typical Characteristics ..............................................
Detailed Description ............................................ 14
7.1
7.2
7.3
7.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
14
14
14
15
8
Application and Implementation ........................ 18
8.1 Application Information............................................ 18
8.2 Typical Application .................................................. 18
8.3 Do's and Don'ts ...................................................... 20
9 Power Supply Recommendations...................... 21
10 Layout................................................................... 21
10.1 Layout Guidelines ................................................. 21
10.2 Layout Example .................................................... 21
11 Device and Documentation Support ................. 22
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
Device Support ....................................................
Documentation Support .......................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resource............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
22
22
22
22
22
23
23
12 Mechanical, Packaging, and Orderable
Information ........................................................... 23
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision G (February 2013) to Revision H
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
•
Changed values in the Thermal Information table to align with JEDEC standards................................................................ 5
Changes from Revision F (February 2013) to Revision G
•
2
Page
Changed layout of National Semiconductor Data Sheet to TI format. ................................................................................. 18
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SNOSAQ5H – FEBRUARY 2007 – REVISED AUGUST 2016
5 Pin Configuration and Functions
DBV and DCK Packages
5-Pin SOT-23 and SC70
Top View
DGK Package
8-Pin VSSOP
Top View
OUT A
1
8
+
V
A
-IN A
+IN A
-
2
+
7
3
6
B
+
V
-
4
OUT B
-IN B
5
+IN B
PW Package
14-Pin TSSOP
Top View
IN AIN A+
V+
IN B+
IN BOUT B
14
1
2
A
- +
13
D
-
OUT A
+
OUT D
IN D-
3
12
4
11
5
10
IN C+
9
IN C-
6
7
- +
B
-
+
IN D+
V-
C
8
OUT C
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Pin Functions: LMV551
PIN
NAME
(1)
TYPE (1)
LMV551
DESCRIPTION
SOT-23, SC70
+IN
1
I
Noninverting Input
-IN
3
I
Inverting Input
OUT
4
O
Output
V-
2
P
Negative Supply
V+
5
P
Positive Supply
I = Input; O = Output; P = Power
Pin Functions: LMV552 and LMV554
PIN
NAME
+IN A
(1)
4
TYPE (1)
LMV552
LMV554
SOIC, VSSOP
SOIC, TSSOP
DESCRIPTION
3
3
I
Noninverting input, channel A
+IN B
5
5
I
Noninverting input, channel B
+IN C
—
10
I
Noninverting input, channel C
+IN D
—
12
I
Noninverting input, channel D
–IN A
2
2
I
Inverting input, channel A
–IN B
6
6
I
Inverting input, channel B
–IN C
—
9
I
Inverting input, channel C
–IN D
—
13
I
Inverting input, channel D
OUT A
1
1
O
Output, channel A
OUT B
7
7
O
Output, channel B
OUT C
—
8
O
Output, channel C
OUT D
—
14
O
Output, channel D
V+
8
4
P
Positive (highest) power supply
V–
4
11
P
Negative (lowest) power supply
I = Input; O = Output; P = Power
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SNOSAQ5H – FEBRUARY 2007 – REVISED AUGUST 2016
6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN
VIN Differential (at V+ = 5 V)
−
+
Supply voltage (V – V )
V− –0.3
Voltage at input/output pins
Junction temperature, TJ
(3)
Storage temperature, Tstg
(1)
(2)
(3)
–65
MAX
UNIT
±2.5
V
6
V
V+ +0.3
V
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office / Distributors for availability and
specifications.
The maximum power dissipation is a function of TJ(MAX), θJA, The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - TA)/ θJA. All numbers apply for packages soldered directly onto a PC board.
6.2 ESD Ratings
VALUE
Human-body model (HBM)
V(ESD)
(1)
(2)
Electrostatic
discharge
(1)
UNIT
±2000
Machine model (MM) (2)
LMV551
±100
LMV552 / LMV554
±250
V
Human Body Model, applicable std. MIL-STD-883, Method 3015.7.
Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22C101-C (ESD FICDM std. of JEDEC).
6.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)
MIN
Temperature
(1)
Supply voltage (V+ – V−)
(1)
MAX
UNIT
–40
NOM
125
°C
2.7
5.5
V
The maximum power dissipation is a function of TJ(MAX), θJA, The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - TA)/ θJA. All numbers apply for packages soldered directly onto a PC board.
6.4 Thermal Information
LMV551
LMV552
LMV554
DBV
(SOT-23)
DCK
(SC70)
DGK
(VSSOP)
PW
(TSSOP)
5 PINS
5 PINS
8 PINS
14 PINS
213.6
303.5
200.3
134.9
°C/W
RθJC(top) Junction-to-case (top) thermal resistance
174.8
135.5
89.1
60.9
°C/W
RθJB
Junction-to-board thermal resistance
72.6
81.1
120.9
77.3
°C/W
ψJT
Junction-to-top characterization parameter
56.6
8.4
21.7
11.5
°C/W
ψJB
Junction-to-board characterization parameter
72.2
80.4
119.4
76.7
°C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance
n/a
n/a
n/a
n/a
°C/W
THERMAL METRIC (1)
RθJA
(1)
Junction-to-ambient thermal resistance
UNIT
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics: 3 V
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 3 V, V− = 0 V, VCM = V+/2 = VO.
PARAMETER
MIN
TEST CONDITIONS
(2)
TA = 25°C
(1)
TYP (2)
1
MAX (2)
3
UNIT
VOS
Input offset voltage
TC VOS
Input offset average drift
TA = –40°C to 125°C
3.3
IB
Input bias current (3)
TA = 25°C
20
38
nA
IOS
Input offset current
TA = 25°C
1
20
nA
CMRR
Common mode rejection
ratio
TA = –40°C to 125°C
0 V ≤ VCM 2 V
4.5
TA = 25°C
74
TA = –40°C to +125°C
72
LMV551 and
LMV552
3 ≤ V+ ≤ 5 V,
VCM = 0.5 V
LMV554
PSRR
Power supply rejection ratio
LMV551 and
LMV552
2.7 ≤ V+ ≤ 5.5 V,
VCM = 0.5 V
LMV554
CMVR
Input common-mode voltage
80
TA = –40°C to
+125°C
78
TA = 25°C
78
TA = –40°C to
+125°C
76
TA = 25°C
80
TA = –40°C to
+125°C
78
TA = 25°C
78
TA = -40°C to
+125°C
76
2.1
LMV554
TA = 25°C
81
TA = –40°C to
+125°C
78
TA = 25°C
79
TA = –40°C to
+125°Ce
77
TA = 25°C
71
TA = -40°C to +125°C
68
VO
Output swing low
(2)
(3)
(4)
(5)
6
Sourcing
80
85
TA = –40°C to
+125°C
50
TA = –40°C to
+125°C
100
65
mV from
rail
77
95
TA = –40°C to
+125°C
110
130
(4)
10
25
TA = 25°C
34
TA = –40°C to +125°C
AV = +1,
10% to 90%
48
120
(4)
Sinking
dB
58
TA = 25°C
RL = 10 kΩ to V+/2
90
40
TA = 25°C
RL = 100 kΩ to V+/2
V
90
TA = –40°C to
+125°C
TA = 25°C
RL = 10 kΩ to V+/2
(1)
92
2.1
Output swing high
Slew rate
dB
92
0
TA = 25°C
SR
92
0
RL = 100 kΩ to V+/2
Supply current per amplifier
92
TA = -40°C to +125°C
0.4 ≤ VO ≤ 2.6, RL =
10 kΩ to V+/2
IS
dB
TA = 25°C
Large signal voltage gain
Output short circuit current
92
CMRR ≥ 60 dB
0.4 ≤ VO ≤ 2.6,
RL = 100 kΩ to V+/2
ISC
µV/°C
CMRR ≥ 68 dB
LMV551 and
LMV552
AVOL
TA = 25°C
mV
mA
42
52
1
(5)
µA
V/µs
Electrical Table values apply only for factor testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ = TA.
Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using
statistical quality control (SQC) method.
Positive current corresponds to current flowing into the device.
The part is not short-circuit protected and is not recommended for operation with heavy resistive loads.
Slew rate is the average of the rising and falling slew rates.
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Electrical Characteristics: 3 V (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 3 V, V− = 0 V, VCM = V+/2 = VO. (1)
PARAMETER
MIN
TEST CONDITIONS
Φm
Phase margin
GBW
Gain bandwidth product
en
Input-referred voltage noise
In
Input-referred current noise
THD
Total harmonic distortion
(2)
TYP (2)
RL = 10 kΩ, CL = 20 pF
UNIT
75
°
3
MHz
f = 100 kHz
70
f = 1 kHz
70
f = 100 kHz
MAX (2)
nV/√Hz
0.1
f = 1 kHz
pA/√Hz
0.15
f = 1 kHz, AV = 2, RL = 2 kΩ
0.003%
6.6 Electrical Characteristics: 5 V
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5 V, V− = 0 V, VCM = V+/2 = VO.
PARAMETER
TEST CONDITIONS
VOS
Input offset voltage
TC VOS
Input offset average drift
IB
Input bias current
IOS
Input offset current
CMRR
(4)
Common mode rejection ratio
TA = 25°C
nA
1
20
nA
TA = 25°C
76
TA = –40°C to +125°C
74
CMRR ≥ 68 dB
CMRR ≥ 60 dB
Output swing high
RL = 10 kΩ to V+/2
VO
RL = 100 kΩ to V+/2
Output swing low
RL = 10 kΩ to V+/2
Supply current per amplifier
(1)
(2)
(3)
(4)
(5)
mV
38
RL = 100 kΩ to V+/2
IS
UNIT
20
TA = 25°C
78
TA = –40°C to +125°C
75
TA = 25°C
78
TA = –40°C to +125°C
75
Sourcing
93
nA
90
dB
90
0
4.1
TA = –40°C to +125°C
0
4.1
78
V
90
75
75
dB
80
72
TA = 25°C
70
TA = –40°C to +125°C
TA = 25°C
125
TA = –40°C to +125°C
TA = 25°C
210
70
110
130
155
10
25
TA = 25°C
37
TA = –40°C to +125°C
mV from
rail
82
TA = –40°C to +125°C
(5)
155
60
TA = –40°C to +125°C
TA = 25°C
92
122
(5)
Sinking
µV/°C
TA = 25°C
0.4 ≤ VO ≤ 4.6, RL = 10 kΩ to V+/2
Output short-circuit current
3
3.3
Large signal voltage gain
ISC
1
4.5
0.4 ≤ VO ≤ 4.6, RL = 100 kΩ to V+/2
AVOL
MAX (2)
TA = 25°C
Power supply rejection ratio
Input common-mode voltage
TYP (3)
TA = 25°C
2.7 V ≤ V+ ≤ 5.5 V to VCM = 0.5 V
CMVR
(1)
TA = –40°C to +125°C
3 V ≤ V+ ≤ 5 V to VCM = 0.5 V
PSRR
MIN
(2)
mA
46
54
µA
Electrical Table values apply only for factor testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ = TA.
Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using
statistical quality control (SQC) method.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
Positive current corresponds to current flowing into the device.
The part is not short-circuit protected and is not recommended for operation with heavy resistive loads.
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Electrical Characteristics: 5 V (continued)
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5 V, V− = 0 V, VCM = V+/2 = VO. (1)
PARAMETER
SR
Slew rate
AV = +1, VO = 1 VPP
10% to 90% (6)
Φm
Phase margin
RL = 10 kΩ, CL = 20 pF
GBW
Gain bandwidth product
en
Input-referred voltage noise
In
Input-referred current noise
THD
Total harmonic distortion
(6)
8
MIN (2)
TEST CONDITIONS
TYP (3)
1
°
MHz
70
70
0.1
0.15
f = 1 kHz, AV = 2, RL = 2 kΩ
V/µs
3
f = 1 kHz
f = 1 kHz
UNIT
75
f = 100 kHz
f = 100 kHz
MAX (2)
nV/√Hz
pA/√Hz
0.003%
Slew rate is the average of the rising and falling slew rates.
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6.7 Typical Characteristics
140
158
RL = 100 k: 135
120
135
113
100
80
90
50 pF
60
68
100 pF
40
45
23
20
20 pF
100 pF
50 pF
0
-20
100
10k
1k
100k
68
60
GAIN
45
40
23
20 VS = +3V
RL = 100 k:
0
CL = 20 pF
-20
10k
100
1k
0
-23
10M
1M
90
80
0
100k
Figure 1. Open-Loop Gain and Phase With Capacitive Load
Figure 2. Open-Loop Gain and Phase With Resistive Load
140
158
140
158
120
135
120
135
113
100
90
80
100
113
60 GAIN
68
40
45
20 VS = 3V
23
0 RL = 10 k:
CL = 20 pF
-20
100
1k
100k
1M
60
PHASE
68
45
0 RL = 100 k:
-20
100
-23
10M
1k
10k
100k
1M
-23
10M
FREQUENCY (Hz)
158
120
135
100
113
1.1
1.0
90
60
68
GAIN
45
VS = 5V
23
RL = 10 k:
0
PHASE (°)
PHASE
80
Figure 4. Open-Loop Gain and Phase With Resistive Load
SLEW RATE (V/Ps)
140
0
0
CL = 20 pF
Figure 3. Open-Loop Gain and Phase With Resistive Load
20
23
VS = 5V
FREQUENCY (Hz)
40
90
GAIN
40
20
0
10k
GAIN (dB)
80
PHASE (°)
PHASE
GAIN (dB)
-23
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
GAIN (dB)
1M
PHASE (°)
GAIN
113
PHASE
20 pF
PHASE (°)
PHASE
GAIN (dB)
120
100
GAIN (dB)
158
VS = +5V
PHASE (°)
140
RISING EDGE
0.9
0.8
0.7
FALLING EDGE
0.6
0.5
CL = 20 pF
-20
100
1k
10k
100k
1M
-23
10M
0.4
3
3.25 3.5 3.75
FREQUENCY (Hz)
4
4.25 4.5 4.75
5
VS (V)
Figure 5. Open-Loop Gain and Phase With Resistive Load
Figure 6. Slew Rate vs Supply voltage
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Typical Characteristics (continued)
0.015
1.5
0.01
1
0.5
VOUT (V)
VOUT (V)
0.005
VS = 5V
0
CL = 50 pF
VIN = 20 mVPP, 20 kHz
VS = 5V
0
VIN = 2 VPP, 20 kHz
-0.005
-0.5
-0.01
-1
-0.015
CL = 15 pF, AV = +1
-1.5
0
20
40
60
80
100
0
20
TIME (Ps)
80
100
Figure 8. Large-Signal Transient Response
0.015
1000
INPUT REFERRED NOISE
0.01
0.005
VOUT (V)
60
TIME (Ps)
Figure 7. Small-Signal Transient Response
0
VS = 5V
CL = 15 pF
-0.005
VIN = 20 mVPP, 20 kHz
-0.01
VOLTAGE nV/ Hz
100
10
1
0.1
CURRENT pA/ Hz
0
-0.015
0
20
40
60
80
0.1
1
TIME (Ps)
10
100
1k
10k
FREQUENCY (Hz)
Figure 9. Small-Signal Transient Response
Figure 10. Input Referred Noise vs Frequency
1.00
1.00
0.10
THD+N (%)
THD+N (%)
0.10
RL = 10 k:
RL = 10 k:
0.01
0.01
VS = 3V
VS = 5V
AV = +2
RL = 100 k:
VIN = 1 kHz SINE WAVE
0.00
0.01
0.1
1
10
AV = +2
VIN = 1 kHz SINE WAVE
0.00
0.01
0.1
Figure 11. THD+N vs Amplitude at 3 V
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RL = 100 k:
1
10
VOUT (VPP)
VOUT (VPP)
10
40
Figure 12. THD+N vs Amplitude at 5 V
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Typical Characteristics (continued)
1
1
VS = 3V
VS = 5V
AV = +2
AV = +2
VOUT = 1 VPP
VOUT = 2 VPP
0.1
THD+N (%)
0.1
THD+N (%)
RL = 10 k:
0.01
RL = 10 k:
0.01
RL = 100 k:
RL = 100 k:
0.001
0.001
10
100
1k
10k
100k
10
100
FREQUENCY (Hz)
1k
10k
100k
FREQUENCY (Hz)
Figure 13. THD+N vs Amplitude
Figure 14. THD+N vs Amplitude
50
2
VS = 3V
PER CHANNEL
1.5
45
125°C
1
25°C
VOS (mV)
IS (PA)
40
35
-40°C
30
0.5
0
-40qC
25qC
-0.5
-1
25
-1.5
125qC
20
2.7
3.4
4.1
4.8
-2
0
5.5
0.5
1
2
2.5
2
VS = 5V
1.5
1.5
1
1
0.5
0.5
VOS (mV)
VOS (mV)
2
Figure 16. VOS vs VCM
Figure 15. Supply Current vs Supply Voltage
0
-40qC
25qC
-0.5
0
25qC
-40qC
-0.5
-1
-1
-1.5
-1.5
125qC
125qC
-2
1.5
VCM (V)
VS (V)
0
1
2
3
4
5
-2
2.7
VCM (V)
3.4
4.1
4.8
5.5
VS (V)
Figure 17. VOS vs VCM
Figure 18. VOS vs Supply Voltage
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Typical Characteristics (continued)
26
26
24
24
125°C
22
25°C
25°C
125°C
20
IBIAS (nA)
IBIAS (nA)
22
18
16
20
18
16
-40°C
14
-40°C
14
12
12
VS = 3V
10
0
VS = 5V
0.5
1
1.5
2
10
2.5
0
1
2
VCM (V)
3
4
5
VCM (V)
Figure 19. IBIAS vs VCM
Figure 20. IBIAS vs VCM
180
26
125°C
160
24
VOUT FROM RAIL (mV)
125°C
22
IBIAS (nA)
25°C
20
18
16
-40° C
14
12
140
25°C
120
100
80
-40°C
60
40
RL = 10 k:
10
2.5
3
3.5
4
4.5
5
20
5.5
3
3.5
4
100
90
90
125°C
70
25°C
60
50
40
80
125°C
70
25°C
60
50
40
-40°C
30
20
3.5
-40°C
30
RL = 100 k:
3
RL = 100 k:
4
4.5
5
20
3
VS (V)
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3.5
4
4.5
5
VS (V)
Figure 23. Negative Output Swing vs Supply Voltage
12
5
Figure 22. Positive Output Swing vs Supply Voltage
VOUT FROM RAIL (mV)
VOUT FROM RAIL (mV)
Figure 21. IBIAS vs Supply Voltage
100
80
4.5
VS (V)
VS (V)
Figure 24. Positive Output Swing vs Supply Voltage
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Typical Characteristics (continued)
180
VOUT FROM RAIL (mV)
160
125°C
140
25°C
120
100
80
-40°C
60
40
RL = 10 k:
20
3
3.5
4
4.5
5
VS (V)
Figure 25. Negative Output Swing vs Supply Voltage
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7 Detailed Description
7.1 Overview
The LMV55x are high performance, low power operational amplifiers implemented with TI’s advanced VIP50
process. They feature 3 MHz of bandwidth while consuming only 37 µA of current per amplifier, which is an
exceptional bandwidth to power ratio in this op amp class. These amplifiers are unity gain stable and provide an
excellent solution for low power applications requiring a wide bandwidth.
7.2 Functional Block Diagram
(Each Amplifier)
7.3 Feature Description
The differential inputs of the amplifier consist of a noninverting input (+IN) and an inverting input (–IN). The
amplifier amplifies only the difference in voltage between the two inputs, which is called the differential input
voltage. The output voltage of the op-amp VOUT is given by Equation 1:
VOUT = AOL (IN+ - IN-)
where
•
AOL is the open-loop gain of the amplifier, typically around 100 dB (100,000x, or 10 uV per volt).
(1)
7.3.1 Low Voltage and Low Power Operation
The LMV55x have performance ensured at supply voltages of 3 V and 5 V and are ensured to be operational at
all supply voltages from 2.7 V to 5.5 V. For this supply voltage range, the LMV55x draw the extremely low supply
current of less than 37 μA per amp.
7.3.2 Wide Bandwidth
The bandwidth to power ratio of 3 MHz to 37 μA per amplifier is one of the best bandwidth to power ratios ever
achieved. This makes these devices ideal for low power signal processing applications such as portable media
players and instrumentation.
7.3.3 Low Input Referred Noise
The LMV55x provide a flatband input referred voltage noise density of 70 nV/√Hz , which is significantly better
than the noise performance expected from an ultra low power op amp. They also feature the exceptionally low 1/f
noise corner frequency of 4 Hz. This noise specification makes the LMV55x ideal for low power applications such
as PDAs and portable sensors.
7.3.4 Ground Sensing and Rail-to-Rail Output
The LMV55x each have a rail-to-rail output stage, which provides the maximum possible output dynamic range.
This is especially important for applications requiring a large output swing. The input common mode range
includes the negative supply rail which allows direct sensing at ground in a single supply operation.
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Feature Description (continued)
7.3.5 Small Size
The small footprints of the LMV55x packages save space on printed circuit boards, and enable the design of
smaller and more compact electronic products. Long traces between the signal source and the op amp make the
signal path susceptible to noise. By using a physically smaller package, the amplifiers can be placed closer to
the signal source, reducing noise pickup and enhancing signal integrity.
7.4 Device Functional Modes
7.4.1 Stability Of Op Amp Circuits
7.4.1.1 Stability and Capacitive Loading
GAIN
As seen in the Phase Margin vs Capacitive Load graph, the phase margin reduces significantly for CL greater
than 100 pF. This is because the op amp is designed to provide the maximum bandwidth possible for a low
supply current. Stabilizing them for higher capacitive loads would have required either a drastic increase in
supply current, or a large internal compensation capacitance, which would have reduced the bandwidth of the op
amp. Hence, if the LMV55x are to be used for driving higher capacitive loads, they must be externally
compensated.
STABLE
ROC ± 20 dB/decade
UNSTABLE
ROC = 40 dB/decade
0
FREQUENCY (Hz)
Figure 26. Gain vs Frequency for an Op Amp
An op amp, ideally, has a dominant pole close to DC, which causes its gain to decay at the rate of 20 dB/decade
with respect to frequency. If this rate of decay, also known as the rate of closure (ROC), remains the same until
the op amp’s unity gain bandwidth, the op amp is stable. If, however, a large capacitance is added to the output
of the op amp, it combines with the output impedance of the op amp to create another pole in its frequency
response before its unity gain frequency (Figure 26). This increases the ROC to 40 dB/ decade and causes
instability.
In such a case a number of techniques can be used to restore stability to the circuit. The idea behind all these
schemes is to modify the frequency response such that it can be restored to an ROC of 20 dB/decade, which
ensures stability.
7.4.1.1.1 In the Loop Compensation
Figure 27 illustrates a compensation technique, known as ‘in the loop’ compensation, that employs an RC
feedback circuit within the feedback loop to stabilize a non-inverting amplifier configuration. A small series
resistance, RS, is used to isolate the amplifier output from the load capacitance, CL, and a small capacitance, CF,
is inserted across the feedback resistor to bypass CL at higher frequencies.
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Device Functional Modes (continued)
VIN
+
ROUT
RS
-
CL
RL
CF
RF
RIN
Copyright © 2016, Texas Instruments Incorporated
Figure 27. In the Loop Compensation
The values for RS and CF are decided by ensuring that the zero attributed to CF lies at the same frequency as the
pole attributed to CL. This ensures that the effect of the second pole on the transfer function is compensated for
by the presence of the zero, and that the ROC is maintained at 20 dB/decade. For the circuit shown in Figure 27
the values of RS and CF are given by Equation 2. Values of RS and CF required for maintaining stability for
different values of CL, as well as the phase margins obtained, are shown in Table 1. RF, RIN, and RL are to be 10
kΩ, while ROUT is 340Ω.
RS = ROUTRIN
RF
§ RF + 2RIN
¨
CLROUT
¨ R2
F
©
§
¨
¨
©
§
¨
¨
©
§
1
CF = ¨¨1 +
A
CL
©
(2)
Table 1. Phase Margins
CL (pF)
RS (Ω)
CF (pF)
PHASE MARGIN (°)
50
340
8
47
100
340
15
42
150
340
22
40
Although this methodology provides circuit stability for any load capacitance, it does so at the price of bandwidth.
The closed loop bandwidth of the circuit is now limited by RF and CF.
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7.4.1.1.2 Compensation by External Resistor
In some applications it is essential to drive a capacitive load without sacrificing bandwidth. In such a case, in the
loop compensation is not viable. A simpler scheme for compensation is shown in Figure 28. A resistor, RISO, is
placed in series between the load capacitance and the output. This introduces a zero in the circuit transfer
function, which counteracts the effect of the pole formed by the load capacitance and ensures stability. The value
of RISO to be used should be decided depending on the size of CL and the level of performance desired. Values
ranging from 5 Ω to 50 Ω are usually sufficient to ensure stability. A larger value of RISO results in a system with
less ringing and overshoot, but also limits the output swing and the short-circuit current of the circuit.
+
RISO
±
CL
VOUT
VIN
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Figure 28. Compensation by Isolation Resistor
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LMV55x have an operating supply voltage range from 2.7 V to 5.5 V. These amplifiers can operate over a
wide temperature range (−40°C to 125°C), making them a great choice for automotive applications, sensor
applications as well as portable instrumentation applications.
With a wide unity gain bandwidth of 3 MHz, low input referred noise density and an excellent BW to supply
current ratio, the LMV55x are well suited for low-power filtering applications. Active filter topologies, such as the
Sallen-Key low pass filter shown in Figure 29, are very versatile, and can be used to design a wide variety of
filters (Chebyshev, Butterworth or Bessel). For best results, the amplifier must have a bandwidth that is eight to
ten times the filter frequency bandwidth. Failure to follow this guideline can result in phase shift of the amplifier
and premature roll-off. The Sallen-Key topology, in particular, can be used to attain a wide range of Q, by using
positive feedback to reject the undesired frequency range.
8.2 Typical Application
C1
R1
R2
+
VIN
VOUT
C2
R3
R4
Figure 29. Two Pole Sallen-Key Low Pass Filter
8.2.1 Design Requirements
As a design example:
Require: ALP = 10, less than 1dB passband ripple, and a cutoff frequency of 1kHz.
8.2.2 Detailed Design Procedure
There are many resources discussing the Sallen-Key lowpass filter topology.
Texas Instruments has made filter design easy by creating on-line and stand alone design tools, such as
Webench Filter Designer and Filter Pro Desktop.
For this design, the stand-alone Filter Pro Desktop is used.
For the design, the following parameters are entered into the Filterpro software:
1. Filter Type = Lowpass
2. Gain = 10 V/V (20dB)
3. Passband Frequency = 1 kHz
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Typical Application (continued)
4.
5.
6.
7.
8.
9.
Allowable Ripple = 1 dB
Filter Order = Checked and set to 2
Response Type = Butterworth
Filter Topology = Sallen-Key
Component Tolerance - Resistor = E96 1%
Component Tolerance - Capacitor = E6 20%
After entering these values, FilterPro returns the following recommended values:
1. R1 = 44.2 kΩ
2. R2 = 38.3 kΩ
3. R3 = 2.49 kΩ
4. R4 = 22.6 kΩ
5. C1 = 10 nF
6. C2 = 1.5 nF
The LMV55x is targeted for low power operation. The above resistor values are assumed for a standard power
application. To save power, both quiescent and dynamic, the values of the resistors can be increased.
The largest consumer of power is the gain setting feedback resistors R3 and R4, as these are DC coupled and
represent a constant DC load to the amplifier. If the output is biased at 2.5 V, then 2.5 V / (22.6 k + 2.49 k) =
99.6 µA is flowing through the feedback network. This is significantly more than the 37uA quiescent current of the
amplifier alone! Increasing the size of the feedback resistors by a decade from 22.6k to 226k, the current in the
feedback network can be reduced down to 9.9uA.
Increasing the resistor values requires a proportional decrease in the values of the capacitors. If a resistor value
is increased 10×, then the corresponding capacitor value must be decreased 10×. However, note that increasing
the resistor values increases the contributed noise, and decreasing the capacitors to small values increases the
sensitivity to stray capacitance.
There is a decision to be made about also scaling the filter components (R1, R2, C1 & C2). R1 and R2 are AC
coupled to the output, so the only DC current flowing through these resistors is the input bias current of the
LMV55x (typically 20 nA). However, large AC currents can flow through C2 and C1 during large signal swings.
Scaling the filter components also reduces the peak AC signal currents. If the AC signals are expected to large
(several Vpp) and frequent, then scaling the filter values may be beneficial to overall power consumption. If the
expected AC signals are small, it may not be worth the noise tradeoff to scale these values.
Because the LMV55x has a bipolar input, to maintain DC accuracy, the equivalent resistance seen by each
amplifier input should be equal to cancel the bias current effects.
To maintain DC accuracy through bias current cancelling, the following relationship should be maintained:
(R1 + R2) = (R3 // R4)
(3)
Fortunately, the filter Pro software makes changing and recalculating the values easy. By changing the value of
any of the filter components (R1, R2, C1 & C2) in the schematic tab, the program automatically recalculates and
scale these components. Conversely, changing the gain feedback components (R3 or R4) also causes the other
feedback resistor to scale. However, Filter Pro does NOT maintain the relationship between the feedback and
filter elements as described in Equation 3 above. The feedback resistor values can be 'seeded' and scaled
appropriately, as long as the original feedback resistor ratio is maintained.
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Typical Application (continued)
C1
1nF
R1
158NŸ
R2
158NŸ
+
VIN
VOUT
C2
1nF
R3
634NŸ
R4
634NŸ
Figure 30. 1kHz Sallen-Key Low Pass Filter with Values
8.2.3 Application Curve
Figure 31 shows the simulated results of the example 1-KHz Sallen-Key Low Pass Filter.
30
-3dB @ 1kHz
20
Gain (dB)
10
0
-10
-20
-30
10
100
1k
10k
100k
Frequency (Hz)
C001
Figure 31. 1KHz, 2-Pole Sallen-Key Low Pass Filter Results
8.3 Do's and Don'ts
Do properly bypass the power supplies.
Do add series resistence to the output when driving capacitive loads, particularly cables, Muxes and ADC inputs.
Do add series current limiting resistors and external Schottky clamp diodes if input voltage is expected to exceed
the supplies. Limit the current to 1 mA or less (1 kΩ per volt).
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9 Power Supply Recommendations
For proper operation, the power supplies must be properly decoupled. For decoupling the supply lines, TI
recommends that 10-nF capacitors be placed as close as possible to the op amp power supply pins. For singlesupply, place a capacitor between V+ and V− supply leads. For dual supplies, place one capacitor between V+
and ground, and one capacitor between V- and ground.
10 Layout
10.1 Layout Guidelines
The V+ pin should be bypassed to ground with a low-ESR capacitor.
The optimum placement is closest to the V+ and ground pins.
Take care to minimize the loop area formed by the bypass capacitor connection between V+ and ground.
The ground pin should be connected to the PCB ground plane at the pin of the device.
The feedback components should be placed as close to the device as possible minimizing strays.
10.2 Layout Example
Figure 32. SOT-23 Layout Example
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
LMV551 PSPICE Model (SNOM060)
LMV552 PSPICE Model (SNOM061)
LMV554 PSPICE Model (SNOM062)
TINA-TI SPICE-Based Analog Simulation Program
DIP Adapter Evaluation Module
TI Universal Operational Amplifier Evaluation Module
TI Filterpro Software
11.2 Documentation Support
11.2.1 Related Documentation
For additional applications, see the following: AN-31 Op Amp Circuit Collection (SNLA140)
11.3 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 2. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
LMV551
Click here
Click here
Click here
Click here
Click here
LMV552
Click here
Click here
Click here
Click here
Click here
LMV554
Click here
Click here
Click here
Click here
Click here
11.4 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.5 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.6 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
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11.7 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.8 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
LMV551MF/NOPB
ACTIVE
SOT-23
DBV
5
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AF3A
LMV551MFX/NOPB
ACTIVE
SOT-23
DBV
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AF3A
LMV551MG/NOPB
ACTIVE
SC70
DCK
5
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
A94
LMV551MGX/NOPB
ACTIVE
SC70
DCK
5
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
A94
LMV552MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AH3A
LMV552MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
AH3A
LMV554MT/NOPB
ACTIVE
TSSOP
PW
14
94
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMV55
4MT
LMV554MTX/NOPB
ACTIVE
TSSOP
PW
14
2500
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
LMV55
4MT
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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