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MAX232E
SLLS723C – APRIL 2006 – REVISED AUGUST 2016
MAX232E Dual RS-232 Driver and Receiver With IEC61000-4-2 Protection
1 Features
3 Description
•
The MAX232E is a dual driver and receiver that
includes a capacitive voltage generator to supply RS232-F compliant voltage levels from a single 5-V
supply. Each receiver converts RS-232 inputs to 5-V
TTL/CMOS levels. This receiver has a typical
threshold of 1.3 V, a typical hysteresis of 0.5 V, and
can accept ±30-V inputs. Each driver converts
TTL/CMOS input levels into TIA/RS-232-F levels.
1
•
•
•
•
•
Meets or Exceeds TIA/RS-232-F and ITU
Recommendation V.28
ESD Protection for RS-232 Bus Pins
– ±15-kV Human-Body Model (HBM)
– ±8-kV IEC61000-4-2, Contact Discharge
– ±15-kV IEC61000-4-2, Air-Gap Discharge
Operates From a Single 5-V Power Supply With
1-µF Charge-Pump Capacitors
Operates up to 250 kbit/s
Two Drivers and Two Receivers
Low Supply Current: 8 mA Typical
Device Information(1)
PART NUMBER
2 Applications
•
•
•
•
•
TIA/RS-232-F
Battery-Powered Systems
Terminals
Modems
Computers
PACKAGE (PINS)
BODY SIZE (NOM)
MAX232ECD
MAX232EID
SOIC (16)
9.90 mm × 3.91 mm
MAX232ECDW
MAX232EIDW
SOIC WIDE (16)
10.30 mm × 7.50 mm
MAX232ECN
MAX232EIN
PDIP (16)
19.30 mm × 6.35 mm
MAX232ECPW
MAX232EIPW
TSSOP (16)
5.00 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Logic Diagram (Positive Logic)
POWER
5V
DIN
2
2
TX
250 kb/s
ROUT
2
RX
DOUT
RS-232
IEC61000-4-2
2
RIN
RS-232
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
MAX232E
SLLS723C – APRIL 2006 – REVISED AUGUST 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
4
4
4
4
5
5
5
5
6
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Electrical Characteristics: Driver ...............................
Electrical Characteristics: Receiver ..........................
Switching Characteristics: Driver ..............................
Switching Characteristics: Receiver..........................
Typical Characteristics ............................................
Parameter Measurement Information .................. 7
Detailed Description .............................................. 9
8.1
8.2
8.3
8.4
9
Overview ................................................................... 9
Functional Block Diagram ......................................... 9
Feature Description................................................... 9
Device Functional Modes........................................ 10
Applications and Implementation ...................... 11
9.1 Application Information............................................ 11
9.2 Typical Application .................................................. 11
10 Power Supply Recommendations ..................... 13
11 Layout................................................................... 13
11.1 Layout Guidelines ................................................. 13
11.2 Layout Example .................................................... 13
12 Device and Documentation Support ................. 14
12.1
12.2
12.3
12.4
12.5
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
14
14
14
14
14
13 Mechanical, Packaging, and Orderable
Information ........................................................... 14
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (November 2009) to Revision C
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
•
Deleted "±30-V Input Levels" from Features ......................................................................................................................... 1
•
Deleted Ordering Information table; see POA at the end of the data sheet ......................................................................... 1
•
Added MIN value ±3 to "Receiver input voltage (RIN1, RIN2) row in Recommended Operating Conditions ....................... 4
•
Changed RθJA values in Thermal Information ......................................................................................................................... 4
•
Deleted table note 3 from Receiver Section Electrical Characteristics ................................................................................. 5
•
Added a new row to the Function Table for Each Receiver ................................................................................................ 10
2
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SLLS723C – APRIL 2006 – REVISED AUGUST 2016
5 Pin Configuration and Functions
D, DW, N, or PW Package
Add 16-Pin SOIC, PDIP, or TSSOP
Top View
C1+
VS+
C1−
C2+
C2−
VS−
DOUT2
RIN2
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
VCC
GND
DOUT1
RIN1
ROUT1
DIN1
DIN2
ROUT2
Pin Functions
PIN
NO.
1
NAME
C1+
I/O
DESCRIPTION
—
Positive lead of C1 capacitor
2
VS+
O
Positive charge pump output for storage capacitor only
3
C1–
—
Negative lead of C1 capacitor
4
C2+
—
Positive lead of C2 capacitor
5
C2–
—
Negative lead of C2 capacitor
6
VS–
O
Negative charge pump output for storage capacitor only
7
DOUT2
O
RS-232 line data output (to remote RS-232 system)
8
RIN2
I
RS-232 line data input (from remote RS-232 system)
9
ROUT2
O
Logic data output (to UART)
10
DIN2
I
Logic data input (from UART)
11
DIN1
I
Logic data input (from UART)
12
ROUT1
O
Logic data output (to UART)
13
RIN1
I
RS-232 line data input (from remote RS-232 system)
14
DOUT1
O
RS-232 line data output (to remote RS-232 system)
15
GND
—
Ground
16
VCC
—
Supply voltage—connect to external 5-V power supply
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
Input supply voltage
VS+
Positive output supply voltage
VS–
Negative output supply voltage
VI
Input voltage
VO
Output voltage
UNIT
6
V
VCC – 0.3
15
V
–0.3
–15
V
–0.3
VCC + 0.3
Receiver
Short-circuit duration
Operating virtual junction temperature
Tstg
Storage temperature
(2)
MAX
Driver
TJ
(1)
MIN
–0.3
(2)
VCC
±30
DOUT
VS– – 0.3
VS+ + 0.3
ROUT
–0.3
VCC + 0.3
DOUT
V
V
Unlimited
–65
150
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to network GND.
6.2 ESD Ratings
VALUE
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
Electrostatic
discharge
V(ESD)
±15000
Other pins
±3000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
All pins
±1500
IEC61000-4-2, air-gap discharge
Pins 7, 8,
13, and 14
±15000
IEC61000-4-2, contact discharge
(1)
(2)
Pins 7, 8,
13, and 14
UNIT
V
±8000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
VCC
Supply voltage
VIH
High-level input voltage (DIN1, DIN2)
VIL
Low-level input voltage (DIN1, DIN2)
NOM
MAX
4.5
5
5.5
2
Receiver input voltage (RIN1, RIN2)
TA
MIN
MAX232EC
Operating free-air temperature
MAX232EI
UNIT
V
V
0.8
V
±3
±30
V
0
70
–40
85
°C
6.4 Thermal Information
MAX232E
THERMAL METRIC (1) (2) (3)
D
(SOIC)
DW
(SOIC)
N
(PDIP)
PW
(TSSOP)
UNIT
16 PINS
16 PINS
16 PINS
16 PINS
RθJA
Junction-to-ambient thermal resistance
73.8
73.4
43.3
101.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
33.4
35.1
30
29.3
°C/W
RθJB
Junction-to-board thermal resistance
31.4
38.3
23.3
47.3
°C/W
(1)
(2)
(3)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
Maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA)/RθJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
The package thermal impedance is calculated in accordance with JESD 51-7.
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Thermal Information (continued)
MAX232E
THERMAL METRIC
(1) (2) (3)
D
(SOIC)
DW
(SOIC)
N
(PDIP)
PW
(TSSOP)
16 PINS
UNIT
16 PINS
16 PINS
16 PINS
ψJT
Junction-to-top characterization parameter
5.8
9.4
14.4
1.4
°C/W
ψJB
Junction-to-board characterization parameter
31.1
37.7
23.2
46.6
°C/W
6.5 Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 10)
TEST CONDITIONS (1)
PARAMETER
ICC
(1)
(2)
Supply current
VCC = 5.5 V
MIN
TYP (2) MAX
All outputs open, TA = 25°C
8
10
UNIT
mA
Test conditions are C1 – C4 = 1 µF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 5 V and TA = 25°C.
6.6 Electrical Characteristics: Driver
over recommended ranges of supply voltage and operating free-air temperature range
TEST CONDITIONS (1)
PARAMETER
VOH
High-level output voltage
(3)
DOUT
RL = 3 kΩ to GND
MIN
5
VOL
Low-level output voltage
DOUT
RL = 3 kΩ to GND
ro
Output resistance
DOUT
VS+ = VS– = 0,
VO = ±2 V
IOS (4)
Short-circuit output current
DOUT
VCC = 5.5 V,
VO = 0
IIS
Short-circuit input current
DIN
VI = 0
(1)
(2)
(3)
(4)
TYP (2) MAX
7
–7
UNIT
V
–5
300
V
Ω
±10
mA
200
µA
Test conditions are C1 – C4 = 1 µF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 5 V and TA = 25°C.
The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for logic
voltage levels only.
Not more than one output should be shorted at a time.
6.7 Electrical Characteristics: Receiver
over recommended ranges of supply voltage and operating free-air temperature range
TEST CONDITIONS (1)
PARAMETER
MIN TYP (2)
VOH
High-level output voltage
ROUT
IOH = –1 mA
VOL
Low-level output voltage
ROUT
IOL = 3.2 mA
VIT+
Receiver positive-going input threshold voltage
RIN
VCC = 5 V
TA = 25°C
VIT–
Receiver negative-going input threshold voltage
RIN
VCC = 5 V
TA = 25°C
Vhys
Input hysteresis voltage
RIN
VCC = 5 V
ri
Receiver input resistance
RIN
VCC = 5 V
(1)
(2)
MAX
3.5
TA = 25°C
UNIT
V
1.7
0.4
V
2.4
V
0.8
1.2
0.2
0.5
1
V
V
3
5
7
kΩ
TYP
MAX
UNIT
30
V/µs
Test conditions are C1 – C4 = 1 µF at VCC = 5 V ± 0.5 V.
All typical values are at VCC = 5 V and TA = 25°C.
6.8 Switching Characteristics: Driver
VCC = 5 V, TA = 25°C
TEST CONDITIONS (1)
PARAMETER
SR
SR(t)
(1)
Driver slew rate
RL = 3 kΩ to 7 kΩ, See Figure 6
Driver transition region slew rate
RL = 3 kΩ, CL = 2.5 nF
See Figure 7
Data rate
One DOUT switching
MIN
3
V/µs
250
kbit/s
Test conditions are C1 – C4 = 1 µF at VCC = 5 V ± 0.5 V.
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6.9 Switching Characteristics: Receiver
VCC = 5 V, TA = 25°C (see Figure 5)
TEST CONDITIONS (1)
PARAMETER
TYP
UNIT
tPLH(R)
Receiver propagation delay time, low- to high-level output
CL = 50 pF
500
ns
tPHL(R)
Receiver propagation delay time, high- to low-level output
CL = 5 0pF
500
ns
(1)
Test conditions are C1 – C4 = 1 µF at VCC = 5 V ± 0.5 V.
6.10 Typical Characteristics
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
0.8
VOH
VOL
0.6
ROUT Voltage (V)
DOUT Voltage (V)
TA = 25 °C
0.4
0.2
0
1
2
3
4
5
6
7
8
DOUT Load Resistance (k:)
9
10
0
1
2
3
D001
Figure 1. Driver Output Voltage vs Load Resistance
4
5
6
7
ROUT Current (mA)
8
10
D002
Figure 2. Receiver Low Output Voltage vs Load Current
12
6
DIN
DOUT
ROUT
10
5
8
6
4
Waveform (V)
ROUT Voltage (V)
9
3
2
4
2
0
-2
-4
1
-6
0
-10
-8
0
1
2
3
4
5
6
7
ROUT Current (mA)
8
9
10
0
D003
Figure 3. Receiver High Output Voltage vs Load Current
6
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5
10
Time (us)
15
20
D004
Figure 4. Loopback Waveforms
Data Rate 120 kbit/s
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7 Parameter Measurement Information
VCC
RL = 1.3 kW
Pulse
Generator
(see Note A)
See Note C
ROUT
RIN
CL = 50 pF
(see Note B)
TEST CIRCUIT
≤10 ns
Input
10%
≤10 ns
90%
50%
90%
50%
3V
10%
0V
500 ns
tPLH
tPHL
VOH
Output
1.5 V
1.5 V
VOL
WAVEFORMS
A.
The pulse generator has the following characteristics: ZO = 50 Ω, duty cycle ≤ 50%.
B.
CL includes probe and jig capacitance.
C.
All diodes are 1N3064 or equivalent.
Figure 5. Receiver Test Circuit and Waveforms for tPHL and tPLH Measurements
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Parameter Measurement Information (continued)
Pulse
Generator
(see Note A)
DIN
DOUT
RS-232 Output
CL = 10 pF
(see Note B)
RL
TEST CIRCUIT
≤10 ns
≤10 ns
10%
3V
90%
50%
90%
50%
Input
10%
0V
5 ms
tPLH
tPHL
90%
Output
VOH
90%
10%
10%
VOL
tTLH
tTHL
0.8 (V
SR
–V )
0.8 (V
–V
)
OH
OL
OL
OH
or
t
t
TLH
THL
WAVEFORMS
A.
The pulse generator has the following characteristics: ZO = 50 Ω, duty cycle ≤ 50%.
B.
CL includes probe and jig capacitance.
Figure 6. Driver Test Circuit and Waveforms for tPHL and tPLH Measurements (5-µs Input)
Pulse
Generator
(see Note A)
DIN
DOUT
RS-232 Output
3 kW
CL = 2.5 nF
TEST CIRCUIT
≤10 ns
≤10 ns
Input
90%
1.5 V
10%
90%
1.5 V
10%
20 ms
tTLH
tTHL
Output
3V
3V
−3 V
−3 V
SR
VOH
VOL
6V
tTHL or t TLH
WAVEFORMS
A.
The pulse generator has the following characteristics: ZO = 50 Ω, duty cycle ≤ 50%.
Figure 7. Test Circuit and Waveforms for tTHL and tTLH Measurements (20-µs Input)
8
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8 Detailed Description
8.1 Overview
The MAX232E device is a dual driver and receiver that includes a capacitive voltage generator using four
capacitors to supply TIA/EIA-232-F voltage levels from a single 5-V supply. All RS-232 pins have 15-kV HBM
and IEC61000-4-2 Air-Gap discharge protection. RS-232 pins also have 8-kV IEC61000-4-2 contact discharge
protection. Each receiver converts TIA/EIA-232-F inputs to 5-V TTL/CMOS levels. These receivers have shorted
and open fail safe. The receiver can accept up to ±30-V inputs and decode inputs as low as ±3 V. Each driver
converts TTL/CMOS input levels into TIA/EIA-232-F levels. Outputs are protected against shorts to ground.
8.2 Functional Block Diagram
POWER
5V
DIN
2
2
TX
250 kb/s
ROUT
2
RX
DOUT
RS-232
IEC61000-4-2
2
RIN
RS-232
Copyright © 2016, Texas Instruments Incorporated
Figure 8. Logic Diagram (Positive Logic)
8.3 Feature Description
8.3.1 Power
The power block increases and inverts the 5-V supply for the RS-232 driver using a charge pump that requires
four 1-µF external capacitors.
8.3.2 RS-232 Driver
Two drivers interface standard logic level to RS-232 levels. Internal pullup resistors on DIN inputs ensures a high
input when the line is high impedance.
8.3.3 RS-232 Receiver
Two receivers interface RS-232 levels to standard logic levels. An open or shorted to ground input results in a
high output on ROUT.
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8.4 Device Functional Modes
8.4.1 VCC Powered by 5 V
The device is in normal operation.
8.4.2 VCC Unpowered
When MAX232E is unpowered, it can be safely connected to an active remote RS-232 device.
8.4.3 Truth Tables
Table 1 and Table 2 list the functions of this device.
Table 1. Function Table for
Each Driver (1)
(1)
INPUT
DIN
OUTPUT
DOUT
L
H
H
L
H = high level, L = low level
Table 2. Function Table for
Each Receiver (1)
(1)
INPUT
RIN
OUTPUT
ROUT
L
H
H
L
Open
H
H = high level, L = low level, Open
= input disconnected or connected
driver off
11
14
DIN1
DOUT1
10
7
DIN2
DOUT2
12
13
ROUT1
RIN1
9
8
ROUT2
RIN2
Figure 9. Logic Diagram (Positive Logic)
10
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9 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
For proper operation add capacitors as shown in Figure 10. Pins 9 through 12 connect to UART or general
purpose logic lines. RS-232 lines on pins 7, 8, 13, and 14 connect to a connector or cable.
9.2 Typical Application
5V
CBYPASS = 1 mF
+
−
16
1
C1
C1+
1 mF 3
1 mF 5
From CMOS or TTL
To CMOS or TTL
8.5 V
VS+
VS−
C2+
1 mF
2
C1−
4
C2
C3†
VCC
6
−8.5 V
C4
+
C2−
11
14
10
7
12
13
9
8
0V
1 mF
RS-232 Output
RS-232 Output
RS-232 Input
RS-232 Input
15
GND
†
C3 can be connected to VCC or GND.
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Resistor values shown are nominal.
Nonpolarized ceramic capacitors are acceptable. If polarized tantalum or electrolytic capacitors are used, they should
be connected as shown.
Figure 10. Typical Operating Circuit
9.2.1 Design Requirements
•
•
VCC minimum is 4.5 V and maximum is 5.5 V.
Maximum recommended bit rate is 250 kbit/s.
9.2.2 Detailed Design Procedure
The capacitor type used for C1–C4 is not critical for proper operation. The MAX232E requires 1-µF capacitors,
although capacitors up to 10 µF can be used without harm. Ceramic dielectrics are suggested for capacitors.
When using the minimum recommended capacitor values, make sure the capacitance value does not degrade
excessively as the operating temperature varies. If in doubt, use capacitors with a larger (for example, 2×)
nominal value. The capacitors' effective series resistance (ESR), which usually rises at low temperatures,
influences the amount of ripple on V+ and V–.
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Typical Application (continued)
Use larger capacitors (up to 10 µF) to reduce the output impedance at VS+ and VS–.
Bypass VCC to ground with at least 1 µF. In applications sensitive to power-supply noise generated by the charge
pumps, decouple VCC to ground with a capacitor the same size as (or larger than) the charge-pump capacitors
(C1–C4).
9.2.3 Application Curve
Loopback waveform connects DOUT to RIN.
12
DIN
DOUT
ROUT
10
8
Waveform (V)
6
4
2
0
-2
-4
-6
-8
-10
0
5
10
Time (us)
15
20
D005
Date Rate = 120 kbit/s, CL = 1 nF
Figure 11. Loopback Waveforms
12
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10 Power Supply Recommendations
The VCC voltage should be connected to the same power source used for logic device connected to DIN and
ROUT pins. VCC should be between 4.5 V and 5.5 V.
11 Layout
11.1 Layout Guidelines
Keep the external capacitor traces short. This is more important on C1 and C2 nodes that have the fastest rise
and fall times. Make the impedance from MAX232E ground pin and circuit board's ground plane as low as
possible for best ESD performance. Use wide metal and multiple vias on both sides of ground pin.
11.2 Layout Example
Ground
C3
1 C1+
VCC 16
VCC
PF
C1
2 V+
GND 15
3 C1-
DOUT1 14
4 C2+
RIN1 13
5 C2-
ROUT1 12
Ground
C2
Ground
6 V-
DIN1 11
7 DOUT2
DIN2 10
C4
8 RIN2
ROUT2 9
Figure 12. MAX232E Layout
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Copyright © 2006–2016, Texas Instruments Incorporated
Product Folder Links: MAX232E
13
MAX232E
SLLS723C – APRIL 2006 – REVISED AUGUST 2016
www.ti.com
12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
14
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Copyright © 2006–2016, Texas Instruments Incorporated
Product Folder Links: MAX232E
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
MAX232ECD
ACTIVE
SOIC
D
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX232EC
Samples
MAX232ECDR
ACTIVE
SOIC
D
16
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX232EC
Samples
MAX232ECDW
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX232EC
Samples
MAX232ECDWR
ACTIVE
SOIC
DW
16
2000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
0 to 70
MAX232EC
Samples
MAX232ECDWRG4
ACTIVE
SOIC
DW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
MAX232EC
Samples
MAX232ECN
ACTIVE
PDIP
N
16
25
RoHS &
Non-Green
NIPDAU
N / A for Pkg Type
0 to 70
MAX232ECN
Samples
MAX232ECNE4
ACTIVE
PDIP
N
16
25
RoHS &
Non-Green
NIPDAU
N / A for Pkg Type
0 to 70
MAX232ECN
Samples
MAX232ECPW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
MA232EC
Samples
MAX232ECPWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
0 to 70
MA232EC
Samples
MAX232ECPWRG4
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
MA232EC
Samples
MAX232EID
ACTIVE
SOIC
D
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX232EI
Samples
MAX232EIDR
ACTIVE
SOIC
D
16
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX232EI
Samples
MAX232EIDW
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX232EI
Samples
MAX232EIDWG4
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX232EI
Samples
MAX232EIDWR
ACTIVE
SOIC
DW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MAX232EI
Samples
MAX232EIN
ACTIVE
PDIP
N
16
25
RoHS &
Non-Green
NIPDAU
N / A for Pkg Type
-40 to 85
MAX232EIN
Samples
MAX232EINE4
ACTIVE
PDIP
N
16
25
RoHS &
Non-Green
NIPDAU
N / A for Pkg Type
-40 to 85
MAX232EIN
Samples
MAX232EIPW
ACTIVE
TSSOP
PW
16
90
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MB232EI
Samples
MAX232EIPWR
ACTIVE
TSSOP
PW
16
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
MB232EI
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
14-Oct-2022
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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