OPA602
OPA
OPA
602
602
SBOS155A – AUGUST 1987 – REVISED OCTOBER 2002
High-Speed Precision
Difet ® OPERATIONAL AMPLIFIER
FEATURES
APPLICATIONS
●
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WIDE BANDWIDTH: 6.5MHz
HIGH SLEW RATE: 35V/µs
LOW OFFSET: ±250µV max
LOW BIAS CURRENT: ±1pA max
FAST SETTLING TIME: 1µs to 0.01%
UNITY-GAIN STABLE
PRECISION INSTRUMENTATION
OPTOELECTRONICS
SONAR, ULTRASOUND
PROFESSIONAL AUDIO EQUIPMENT
MEDICAL EQUIPMENT
DATA CONVERSION
DESCRIPTION
+VS
The OPA602 is a precision, wide bandwidth FET operational
amplifier. Monolithic Difet (dielectrically isolated FET) construction provides an unusual combination of high-speed and
accuracy.
Its wide-bandwidth design minimizes dynamic errors. High
slew rate and fast settling time allow accurate signal processing in pulse and data conversion applications. Wide bandwidth and low distortion minimize AC errors. All specifications
are rated with a 1kΩ resistor in parallel with 500pF load. The
OPA602 is unity-gain stable and easily drives capacitive
loads up to 1500pF.
(7)
–In
(2)
+In
(3)
Cascode
Output
(6)
Laser-trimmed input circuitry provides offset voltage and drift
performance normally associated with precision bipolar op
amps. Difet construction achieves extremely low input bias
currents (1pA max) without compromising input voltage noise.
The OPA602’s unique input cascode circuitry maintains low
input bias current and precise input characteristics over its
full input common-mode voltage range.
–VS
(4)
(1)
Difet® Burr-Brown Corp.
(5)
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright © 1987, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
www.ti.com
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage ............................................................................... ±18VDC
Internal Power Dissipation (TJ ≤ +175°C) .................................... 1000mW
Differential Input Voltage .............................................................. Total VS
Input Voltage Range ............................................................................ ±VS
Storage Temperature Range
P and U Packages ....................................................... –40°C to +125°C
Operating Temperature Range
P and U Packages ........................................................ –25°C to + 85°C
Lead Temperature
U Package, SO (3s) .................................................................... +260°C
Output Short-Circuit to Ground (+25°C) ................................... Continuous
Junction Temperature .................................................................... +175°C
NOTE: (1) Stresses above those listed under “Absolute Maximum Ratings”
may cause permanent damage to the device. Exposure to absolute maximum
conditions for extended periods may affect device reliability.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
PACKAGE/ORDERING INFORMATION
PRODUCT
OFFSET
VOLTAGE MAX
(µV) AT 25°C
PACKAGE-LEAD
PACKAGE
DESIGNATOR(1)
SPECIFIED
TEMPERATURE
RANGE
OPA602AP
OPA602BP
±2000
DIP-8
P
–25°C to +85°C
602AP
602AP
Tubes, 50
±1000
"
"
"
602BP
602BP
Tubes, 50
OPA602AU
±3000
SO-8
D
–25°C to +85°C
602AU
602AU
Tubes, 100
PACKAGE
MARKING
ORDERING
NUMBER
TRANSPORT
MEDIA, QUANTITY
NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.
PIN CONFIGURATIONS
Top View
DIP, SO
Offset Trim
1
8
NC
–In
2
7
+VS
+In
3
6
Output
–VS
4
5
Offset Trim
Offset Trim
1
8
NC
–In
2
7
+VS
+In
3
6
Output
–VS
4
5
Offset Trim
SO-8
DIP-8
2
NC = No Connection
OPA602
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SBOS155A
ELECTRICAL CHARACTERISTICS
At VS = ±15VDC and TA = +25°C, unless otherwise noted.
OPA602BP
PARAMETER
CONDITIONS
MIN
INPUT NOISE
Voltage:
fO = 10Hz
fO = 100Hz
fO = 1kHz
fO = 10kHz
fB = 10Hz to 10kHz
fB = 0.1Hz to 10Hz
Current:
fB = 0.1Hz to 10Hz
fO = 0.1Hz to 20kHz
OFFSET VOLTAGE
Input Offset Voltage:
P Package
U Package
Over Specified Temperature
P, U Packages
Average Drift(1)
Supply Rejection
TA = TMIN to TMAX
±VS = 12V to 18V
80
TYP
OPA602AP, AU
MAX
MIN
TYP
MAX
UNITS
23
19
13
12
1.4
0.95
✻
✻
✻
✻
✻
✻
nV/ √Hz
nV/ √Hz
nV/ √Hz
nV/ √Hz
µVrms
µVp-p
12
0.6
✻
✻
fAp-p
fA/ √Hz
0.5
1
1
1
2
3
mV
mV
±0.75
±3
100
±1.5
±5
±1.5
✻
✻
±15
mV
µV/°C
dB
70
BIAS CURRENT
Input Bias Current
Over Specified Temperature
VCM = 0VDC
±1
±20
±2
±200
±2
±20
±10
±500
pA
pA
OFFSET CURRENT
Input Offset Current
Over Specified Temperature
VCM = 0VDC
0.5
20
2
200
1
20
10
500
pA
pA
INPUT IMPEDANCE
Differential
Common-Mode
1013 || 1
1014 || 3
INPUT VOLTAGE RANGE
Common-Mode Input Range
Common-Mode Rejection
VIN = ±10VDC
OPEN-LOOP GAIN, DC
Open-Loop Voltage Gain
FREQUENCY RESPONSE
Gain Bandwidth
Full-Power Response
Slew Rate
Settling Time:
0.1%
0.01%
RATED OUTPUT
Voltage Output
Current Output
Output Resistance
Load Capacitance Stability
Short-Circuit Current
POWER SUPPLY
Rated Voltage
Voltage Range, Derated Performance
Current, Quiescent
Over Specified Temperature
TEMPERATURE RANGE
Specification
Operating:
P, U Packages
Storage:
P, U Packages
θJA
✻
✻
Ω || pF
Ω || pF
±10.2
88
+13, –11
100
✻
75
✻
✻
V
dB
RL ≥ 1kΩ
88
100
75
✻
dB
Gain = 100
20Vp-p, RL = 1kΩ
VO = ±10V, RL = 1kΩ
4
6.5
570
35
3.5
✻
✻
✻
MHz
kHz
V/µs
✻
µs
µs
±11
✻
V
✻
✻
✻
✻
✻
mA
Ω
pF
mA
24
Gain = –1, RL = 1kΩ
CL = 500pF, 10V Step
20
0.6
1.0
RL = 1kΩ
±11.5
VO = ±10VDC
1MHz, Open Loop
Gain = +1
±15
±30
±5
+12.9,
–13.8
±20
80
1500
±50
±15
✻
✻
✻
✻
VDC
VDC
mA
mA
✻
✻
°C
+85
✻
✻
°C
+125
✻
✻
✻
°C/W
°C
±18
4
4.5
✻
–25
+85
–25
–40
200
IO = 0mADC
3
3.5
Ambient Temperature
±25
✻
✻
✻ Same specifications as OPA602BP.
NOTE: (1) OPA602AP, AU ensured by design with a 99% confidence level.
OPA602
SBOS155A
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3
TYPICAL CHARACTERISTICS
At TA = +25°C and VS = ±15VDC, unless otherwise noted.
INPUT VOLTAGE NOISE SPECTRAL DENSITY
INPUT CURRENT NOISE SPECTRAL DENSITY
1k
Voltage Noise (nV/√Hz)
Current Noise (fA/√Hz)
100
10
1
100
10
1
0.1
1
10
100
1k
10k
100k
1
1M
10
100
1k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
POWER-SUPPLY REJECTION AND COMMON-MODE
REJECTION vs TEMPERATURE
TOTAL INPUT VOLTAGE NOISE SPECTRAL DENSITY
AT 1kHz vs SOURCE RESISTANCE
110
1k
Voltage Noise, EO (nV/√Hz)
CMR and PSR (dB)
EO
105
CMR
100
PSR
95
RS
100
OPA602 + Resistor
10
Resistor Noise Only
1
90
–75
–50
–25
0
25
50
75
100
100
125
1k
Temperature (°C)
10k
100k
1M
10M
100M
Source Resistance (Ω)
COMMON-MODE REJECTION
vs INPUT COMMON-MODE VOLTAGE
OPEN-LOOP FREQUENCY RESPONSE
140
120
90
–45
100
80
φ
–90
60
40
–135
AOL
80
20
0
–15
–10
–5
0
+5
+10
+15
–180
1
Common-Mode Voltage (V)
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
OPA602
www.ti.com
SBOS155A
Phase Shift (degrees)
100
70
4
CL = 100pF
110
Voltage Gain (dB)
Common-Mode Rejection (dB)
RL = 1kΩ
120
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C and VS = ±15VDC, unless otherwise noted.
GAIN BANDWIDTH AND SLEW RATE
vs TEMPERATURE
GAIN BANDWIDTH AND SLEW RATE
vs SUPPLY VOLTAGE
10
37
38
8
6
33
Slew Rate
4
31
2
29
–75
–50
–25
0
25
50
75
100
36
GBW
6
34
Slew Rate
5
125
5
0
32
10
15
Ambient Temperature (°C)
Supply Voltage (±VCC)
OPEN-LOOP GAIN vs TEMPERATURE
MAXIMUM OUTPUT VOLTAGE SWING
vs FREQUENCY
20
30
120
Output Voltage (Vp-p)
110
Voltage Gain (dB)
7
100
90
20
10
RL = 1kΩ
0
80
–75
–50
–25
0
25
50
75
100
10k
125
100k
1M
10M
Frequency (Hz)
Ambient Temperature (°C)
LARGE-SIGNAL TRANSIENT RESPONSE
SMALL-SIGNAL TRANSIENT RESPONSE
10
Output Voltage (mV)
Output Voltage (V)
150
0
–10
100
50
0
–50
–100
–150
0
1
2
3
4
5
0
Time (µs)
OPA602
SBOS155A
2
5
Time (µs)
www.ti.com
5
Slew Rate (V/µs)
35
GBW
Gain Bandwidth (MHz)
8
Slew Rate (V/µs)
Gain Bandwidth (MHz)
AV = –1
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C and VS = ±15VDC, unless otherwise noted.
SETTLING TIME vs CLOSED-LOOP GAIN
SUPPLY CURRENT vs TEMPERATURE
5
3.5
3
0.01%
2
3.25
Supply Current (mA)
Settling Time (µs)
4
0.1%
1
3.0
2.75
RL = 1kΩ
CL = 100pF
0
–1
–10
–100
2.5
–75
–1k
–50
–25
0
25
50
75
Closed-Loop Gain (V/V)
Ambient Temperature (°C)
OPEN-LOOP GAIN vs SUPPLY VOLTAGE
TOTAL HARMONIC DISTORTION
vs FREQUENCY
1
104
100
125
40.2kΩ
THD + Noise (%rms)
Voltage Gain
402Ω
100
96
6.5Vrms
1kΩ
0.1
AV = +101V/V
AV = +101V/V
0.01
AV = +1V/V
92
0.001
15
20
10
100
1k
10k
Frequency (Hz)
BIAS AND OFFSET CURRENT vs TEMPERATURE
BIAS AND OFFSET CURRENT
vs INPUT COMMON MODE VOLTAGE
10nA
1nA
1nA
100
100
10
10
100k
10
Bias Current (pA)
10nA
1
10
Bias Current
1
Offset Current
0.1
0.1
1
1
0.1
–50
–25
0
25
50
75
100
0.1
125
0.01
0.01
–15
–10
–5
0
5
10
15
Common-Mode Voltage (V)
Ambient Temperature (°C)
6
1
0.1
Supply Voltage (±VCC)
Offset Current (pA)
Bias Current (pA)
10
OPA602
www.ti.com
SBOS155A
Offset Current (pA)
5
0
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C and VS = ±15VDC, unless otherwise noted.
COMMON-MODE REJECTION vs FREQUENCY
140
120
120
Common-Mode Rejection (dB)
Power-Supply Rejection (dB)
POWER-SUPPLY REJECTION vs FREQUENCY
140
100
80
–
+
60
40
20
0
100
80
60
40
20
0
1
10
100
1k
10k
100k
1M
1
10M
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Frequency (Hz)
APPLICATIONS INFORMATION
INPUT BIAS CURRENT GUARDING
Unity-gain stability with good phase margin and excellent
output drive characteristics bring freedom from the subtle
problems associated with other high-speed amplifiers. However, as with any high-speed, wide bandwidth circuitry, careful circuit layout will ensure best performance. Make short,
direct interconnections and avoid stray wiring capacitance—
especially at the inverting input pin.
Leakage currents across printed circuit boards can easily
exceed the input bias current of the OPA602. A circuit board
“guard” pattern, as shown in Figure 1, is an effective solution
to difficult leakage problems. This guard pattern must be
repeated on all layers of a multilayer board. By surrounding
critical high impedance input circuitry with a low impedance
circuit connection at the same potential, leakage currents will
flow harmlessly to the low-impedance node.
Power supplies should be bypassed with good high-frequency
capacitors positioned close to the op amp pins. In most cases
0.1µF ceramic capacitors are adequate. Applications with
heavier loads and fast transient waveforms may benefit from
use of additional 1.0µF tantalum bypass capacitors.
Input bias current may also be degraded by improper handling or cleaning. Contamination from handling parts and
circuit boards may be cleaned with appropriate solvents and
deionized water. Each rinsing operation should be followed
by a 30-minute bake at +85°C.
Noninverting
Buffer
2
2
OPA602
In
6
Out
3
OPA602
6
Out
3
In
Inverting
In
2
Board Layout for Input Guarding:
Guard top and bottom of board.
Alternate—use Teflon® standoff for sensitive input pins.
OPA602
6
Out
3
Teflon® E.I. Du Pont de Nemours & Co.
FIGURE 1. Connection of Input Guard.
OPA602
SBOS155A
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7
APPLICATION CIRCUITS
MSB
B1 •
16
+VS
17
7
•
•
•
•
•
•
•
•
• B12
4 5 6 7 8 9 10 11 12 13 14 15
+15V
DAC7541A
VOUT
Out 2
OPA602
OPA602
2
3
2
3
1
Out 1
VREFERENCE
C1 15pF
18
RF
6
1
5
4
100kΩ
±10mV Typical
Trim Range
Single-Point Ground
(1)
–VCC
B
B
B
B
V OUT = − VREF 1 + 2 + 3 + L + 12
2
4
8
4096
–VS
−10V ≤ VREF ≤ +10V
0 ≤ V OUT ≤ −
NOTE: (1) 10kΩ to 1MΩ trim potentiometer (100kΩ recommended).
4095
VREF
4096
Where: BN = 1 if the BN digital input is high.
BN = 0 if the BN digital input is low.
FIGURE 2. Offset Voltage Trim.
FIGURE 3. Voltage Output Digital-to-Analog Converter.
(2)
HP 5082-2835
2kΩ
2kΩ
50Ω
+15V
47pF
1µF
High-Quality
Pulse Generator
+
2kΩ
510Ω
+15V
1µF
1µF Tantalum
Pulse In
±5V
+
2kΩ
+
1/2 2N5564
51Ω
Output
OPA602
Error Out
±0.5mV
(0.01%)
1µF Tantalum
+
CL
500pF
–15V
1/2 2N5564
1µF
+
510Ω
1µF
+
–15V
FIGURE 4. Settling Time and Slew Rate Test Circuit.
8
OPA602
www.ti.com
SBOS155A
PACKAGE DRAWINGS
P (R-PDIP-T8)
PLASTIC DUAL-IN-LINE
0.400 (10,60)
0.355 (9,02)
8
5
0.260 (6,60)
0.240 (6,10)
1
4
0.070 (1,78) MAX
0.325 (8,26)
0.300 (7,62)
0.020 (0,51) MIN
0.015 (0,38)
Gage Plane
0.200 (5,08) MAX
Seating Plane
0.010 (0,25) NOM
0.125 (3,18) MIN
0.100 (2,54)
0.021 (0,53)
0.015 (0,38)
0.430 (10,92)
MAX
0.010 (0,25) M
4040082/D 05/98
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-001
OPA602
SBOS155A
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9
PACKAGE DRAWINGS (Cont)
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
8 PINS SHOWN
0.020 (0,51)
0.014 (0,35)
0.050 (1,27)
8
0.010 (0,25)
5
0.008 (0,20) NOM
0.244 (6,20)
0.228 (5,80)
0.157 (4,00)
0.150 (3,81)
Gage Plane
1
4
0.010 (0,25)
0°– 8°
A
0.044 (1,12)
0.016 (0,40)
Seating Plane
0.010 (0,25)
0.004 (0,10)
0.069 (1,75) MAX
PINS **
0.004 (0,10)
8
14
16
A MAX
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MIN
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
DIM
4040047/E 09/01
NOTES: A.
B.
C.
D.
10
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
Falls within JEDEC MS-012
OPA602
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SBOS155A
PACKAGE OPTION ADDENDUM
www.ti.com
27-Sep-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
OPA602AU
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-25 to 85
OPA
602AU
Samples
OPA602AU/2K5
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-25 to 85
OPA
602AU
Samples
OPA602AU/2K5E4
ACTIVE
SOIC
D
8
2500
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-25 to 85
OPA
602AU
Samples
OPA602AUE4
ACTIVE
SOIC
D
8
75
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-25 to 85
OPA
602AU
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of