OPA862
SBOS919C – AUGUST 2019 – REVISED AUGUST 2020
OPA862 High Input Impedance, Single-Ended to Differential ADC Driver
1 Features
3 Description
•
•
•
The OPA862 is a single-ended to differential analogto-digital converter (ADC) driver with high input
impedance for directly interfacing with sensors. The
device only consumes 3.1-mA quiescent current for
an output-referred noise density of 8.3 nV/√ Hz in a
gain of 2-V/V configuration. A fully differential amplifier
configured in a gain of 1 V/V with 1-kΩ resistors
must be less than 1 nV/√ Hz to achieve the OPA862
equivalent output-referred noise density of
8.3 nV/√ Hz. The OPA862 can be configured for other
gains using external resistors. The device has a large
gain-bandwidth product of 400 MHz and a slew rate of
140 V/µs. This yields exceptional linearity and fastsettling, 18-bit performance over comparable singleended-to-differential ADC drivers. The device includes
a reference input pin for setting the output commonmode voltage.
•
•
•
•
2 Applications
•
•
•
•
•
•
•
•
16-bit and 18-bit ADC Drivers
Memory and LCD Testers
Data Acquisition (DAQ)
Test and Measurement
Transimpedance Amplifiers (TIA)
Class-D audio Amplifier Drivers
Piezoelectric Sensor Interface
Medical Instrumentation
The OPA862 is fully characterized to operate over a
wide supply range of 3 V to 12.6 V, and features a
rail-to-rail output stage. The device is fabricated using
Texas Instruments' proprietary, high-speed, silicongermanium (SiGe) process and achieves exceptional
distortion performance for 18-bit systems. The device
includes a disable mode that consumes only 12-µA
quiescent current in power-down state.
The OPA862 is rated to work over the extended
industrial temperature range of –40°C to +125°C.
Device Information(1)
PART NUMBER
OPA862
(1)
OPA862
±
RINT
700
470 pF
ADS8881
RINT
700
RREF
0
470 pF
±
A2
+
VREF
2.5 V
-90
+5 V
64.9
A1
VIN
BODY SIZE (NOM)
SOIC (8)
4.90 mm × 3.90 mm
WSON (8)
3.00 mm × 3.00 mm
-80
+7 V
+
PACKAGE
For all available packages, see the orderable addendum at
the end of the data sheet.
64.9
±3.3 V
Single-Ended High-Input Impedance Sensor
Interface
Harmonic Distortion (dBc)
•
•
•
•
•
•
•
Wide Supply Range: 3 V to 12.6 V
High Input Impedance: 325 MΩ
Voltage Noise:
– Input-Referred (f ≥ 5 kHz): 2.3 nV/√ Hz
– Output-Referred (f ≥ 10 kHz): 8.3 nV/√ Hz
Differential Output Offset: ±700 µV (Maximum)
Output Offset Drift: ±1.5 µV/°C (Typical)
A2 Bias Current Cancellation, IB: ±5 nA (Typical)
Gain-Bandwidth Product: 400 MHz
Small-Signal Bandwidth: 44 MHz (G = 2 V/V)
Slew Rate: 140 V/µs
HD2, HD3 (VOD = 10 VPP, 50 kHz):
–122 dBc, –140 dBc
Rail-to-Rail Output:
– High Linear Output Current: 60 mA (Typical)
Quiescent Current: 3.1 mA
Disable mode: 12-µA Quiescent Current
Extended Temperature Operation:
–40°C to +125°C
-100
HD2, VS = 10 V
HD3, VS = 10 V
HD2, VS = 5 V
HD3, VS = 5 V
-110
-120
-130
-140
-150
-160
10k
100k
Frequency (Hz)
1M
D017
Harmonic Distortion vs Frequency
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA862
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SBOS919C – AUGUST 2019 – REVISED AUGUST 2020
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings ....................................... 4
6.2 ESD Ratings .............................................................. 4
6.3 Recommended Operating Conditions ........................4
6.4 Thermal Information ...................................................4
6.5 Electrical Characteristics: VS = ±2.5 V to ±5 V ...........5
6.6 Typical Characteristics: VS = ±5 V.............................. 7
6.7 Typical Characteristics: VS = ±2.5 V......................... 10
6.8 Typical Characteristics: VS = 1.9 V, –1.4 V............... 12
6.9 Typical Characteristics: VS = 1.9 V, –1.4 V to ±5 V...13
7 Detailed Description......................................................16
7.1 Overview................................................................... 16
7.2 Functional Block Diagram......................................... 16
7.3 Feature Description...................................................17
7.4 Device Functional Modes..........................................19
8 Application and Implementation.................................. 20
8.1 Application Information............................................. 20
8.2 Typical Applications.................................................. 21
9 Power Supply Recommendations................................26
10 Layout...........................................................................26
10.1 Layout Guidelines................................................... 26
10.2 Layout Examples.................................................... 27
11 Device and Documentation Support..........................28
11.1 Documentation Support.......................................... 28
11.2 Receiving Notification of Documentation Updates.. 28
11.3 Support Resources................................................. 28
11.4 Trademarks............................................................. 28
11.5 Electrostatic Discharge Caution.............................. 28
11.6 Glossary.................................................................. 28
12 Mechanical, Packaging, and Orderable
Information.................................................................... 28
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (Feburary 2020) to Revision C (August 2020)
Page
• Updated the numbering format for tables, figures, and cross-references throughout the document..................1
• Changed the status of OPA862 WSON package From: Preview To: Active ......................................................1
Changes from Revision A (September 2019) to Revision B (February 2020)
Page
• Changed document status from advance information to production data ......................................................... 1
2
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5 Pin Configuration and Functions
1
2
VS+
3
8
VIN
7
PD
6
VS-
5
VOUT-
8 VIN
VFB 1
VS+ 3
±
4
7 PD
VREF 2
+
±
+
VOUT+
+
±
+
±
VFB
VREF
6 VS5 VOUT-
VOUT+ 4
Not to scale
Not to scale
Figure 5-1. D Package, 8-Pin SOIC (Top View)
Figure 5-2. DTK Package, 8-Pin WSON (Top View)
Table 5-1. Pin Functions
PIN(1)
NAME
NO.
TYPE(2)
DESCRIPTION
PD
7
I
Power down (low = enable, high = disable), cannot be floated
VFB
1
I
Amplifier 1 inverting (feedback) input
VIN
8
I
Amplifier 1 noninverting (signal) input
VOUT+
4
O
Noninverting output
VOUT–
5
O
Inverting output
VREF
2
I
Amplifier 2 noninverting (reference) input
VS+
3
P
Positive power supply
VS–
6
P
Negative power supply
(1)
(2)
Solder the exposed DTK package thermal pad to a heatspreading power or ground plane. This pad is electrically isolated from the die,
but must be connected to a power or ground plane and not floated.
I = input, O = output, and P = power.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
Supply voltage, (VS+) – (VS–)
Supply turn-on/turn-off maximum
Voltage
dV/dT(2)
Input-output voltage range
Current
(VS–) – 0.5
(1)
(2)
(3)
(4)
1
V/µs
(VS+) + 0.5
0.7
Continuous input current(3)
±10
current(4)
V
mA
±20
Continuous power dissipation
Temperature
V
Differential input voltage
Continuous output
UNIT
13
See Thermal Information
Junction, TJ
150
Operating free-air, TA
–40
125
Storage, Tstg
–65
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
Stay below this ± supply turn-on edge rate to make sure that the edge-triggered ESD absorption device across the supply pins remains
off.
Continuous input current limit for both the ESD diodes to supply pins and amplifier differential input clamp diode. The differential input
clamp diode limits the voltage across it to 0.7 V with this continuous input current flowing through it.
Long-term continuous current for electromigration limits.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC
JS-001(1)
UNIT
±2500
Charged device model (CDM), per JEDEC specificationJESD22-C101(2)
V
±1500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VS+
Single-supply positive voltage
TA
Ambient temperature
MIN
NOM
MAX
UNIT
3
10
12.6
V
–40
25
125
°C
6.4 Thermal Information
OPA862
THERMAL
D (SOIC)
DTK (WSON)
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
125.7
65.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
65.9
56.7
°C/W
RθJB
Junction-to-board thermal resistance
69.1
34.4
°C/W
ΨJT
Junction-to-top characterization parameter
18
1.6
°C/W
ΨJB
Junction-to-board characterization parameter
68.3
34.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
8.8
°C/W
(1)
4
METRIC(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics: VS = ±2.5 V to ±5 V
TA ≈ 25°C, A1 input common-mode voltage (VCM) = midsupply, VREF = midsupply, RF (connected between
VOUT+ and VFB) = 0 Ω, RG = open, differential gain (G) = 2 V/V, RL (differential load) = 2 kΩ, RREF = 0 Ω, and
VS = ±5 V for VOD = 10 VPP condtions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
AC PERFORMANCE
SSBW
LSBW
GBWP
SR
tr, tf
HD2
HD3
en
ei
VOD = 20 mVPP
44
VOD = 20 mVPP, G = 4 V/V, RF = 700 Ω
48
VOD = 20 mVPP, G = –2 V/V, RF = 700 Ω
48
VOD = 1 VPP
42
VS = ±2.5 V, VOD = 5 VPP
14
VOD = 10 VPP
7.5
Differential gain-bandwidth product
VOD = 40 mVPP, G = 200 V/V,
RF = 700 Ω
400
MHz
Bandwidth for 0.1-dB flatness
VOD = 20 mVPP, G = 2 V/V
6.5
MHz
Output balance (ΔVOD / ΔVOCM)
VOD = 5 VPP, f = 1 MHz
Slew rate(1) (20% – 80%)
VOD = 10 VPP
Overshoot, undershoot
VOD = 10-V step
Rise and fall time
VOD = 200-mV step
8.5
ns
Settling time
To 0.0015% of final value,
VOD = 10-V step
100
ns
Input overdrive recovery
VIN = VS ± 0.5 V, VREF = midsupply
100
ns
Output overdrive recovery
G = –4 V/V, VOD = 2x overdrive
120
ns
Differential small-signal bandwidth
Differential large-signal bandwidth
Second-order harmonic distortion
Third-order harmonic distortion
MHz
MHz
41
dB
140
V/µs
0.2%
VOD = 10 VPP, f = 15 kHz
–133
VOD = 10 VPP, f = 50 kHz
–122
VOD = 10 VPP, f = 350 kHz
–110
VOD = 10 VPP, f = 15 kHz
–148
VOD = 10 VPP, f = 50 kHz
–140
VOD = 10 VPP, f = 350 kHz
–110
Differential output noise
f ≥ 10 kHz
8.3
Input voltage noise of A1 and A2
f ≥ 5 kHz
2.3
Input current noise of A1
f ≥ 100 kHz
0.7
Input current noise of A2
f ≥ 100 kHz
0.9
dBc
dBc
nV/√Hz
pA/√Hz
DC PERFORMANCE
VOS
IB
IOS
Differential output offset voltage
±50
±700
Input offset voltage for A1, A2
±50
±325
Differential output offset drift
TA = 0°C to 85°C,
TA = –40°C to 125°C
SOIC
±1.5
±9
WSON
±1.5
±7
Input offset voltage drift for A1, A2
TA = 0°C to 85°C,
TA = –40°C to 125°C
SOIC
±0.5
±3
WSON
±0.5
±2.5
Input bias current, A1
Input bias current, A2
VREF pin
Input bias current drift, A1
TA = –40°C to 125°C
Input bias current drift, A2
VREF pin, TA = –40°C to 125°C
Input offset current, A1
G
Differential gain error drift
1
3.1
µA
±90
nA
13
nA/°C
±65
pA/°C
±110
2
Differnetial gain error
±0.1
TA = –40°C to 125°C
µV/°C
±5
±4
Differential gain
µV
±0.02
nA
V/V
±0.25
%
ppm/°C
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6.5 Electrical Characteristics: VS = ±2.5 V to ±5 V (continued)
TA ≈ 25°C, A1 input common-mode voltage (VCM) = midsupply, VREF = midsupply, RF (connected between
VOUT+ and VFB) = 0 Ω, RG = open, differential gain (G) = 2 V/V, RL (differential load) = 2 kΩ, RREF = 0 Ω, and
VS = ±5 V for VOD = 10 VPP condtions (unless otherwise noted)
PARAMETER
RINT
TEST CONDITIONS
MIN
Internal resistors
TYP
MAX
700
UNIT
Ω
INPUT
CMIR
CMRR
Input common-mode range, A1
VS– + 0.5
VS+ – 1.1
VREF pin common-mode range
VS– + 1.3
VS+ – 1.1
V
ΔVOS (2) at CMIR specification, A1
VCM = VS+ – 1.1 V and
VCM = VS– + 0.5 V
±25
µV
ΔVOS (2) at CMIR specification
VREF = VS+ – 1.1 V and
VREF = VS– + 1.3 V
±50
µV
Common-mode rejection ratio
CMRR = VOD / VIN, VIN = VREF,
VCM = ±1 V, RREF = 0 Ω
100
Input impedance common-mode, A1
120
dB
325 || 0.6
Input impedance differential-mode, A1
Input impedance, A2
VREF pin
VOL
Output voltage range low
Each output, single-ended
VOH
Output voltage range high
Each output, single-ended
Linear output current
VS = ±5 V, VOD = ±2.65 V, ∆VOCM < ±10
mV relative to no-load condition
MΩ || pF
35 || 1.9
kΩ || pF
2.3 || 3.5
GΩ || pF
OUTPUT
VS– + 0.15 VS– + 0.25
VS+ – 0.25 VS+ – 0.15
40
V
V
60
mA
POWER SUPPLY
VS
Specified operating voltage
Single-supply referred to GND
IQ
Quiescent current
VS = ±5 V, TA = 25°C
Quiescent current drift
VS = ±5 V, TA = –40°C to 125°C
Power-supply rejection ratio
VIN = VREF = 0 V, ΔVS = 2 V
PSRR
3
10
12.6
V
2.8
3.1
3.3
mA
105
115
9
µA/°C
dB
POWER DOWN
Disable voltage threshold
Disabled above specified voltage
Enable voltage threshold
Enabled below specified voltage
Disable pin bias current
(1)
(2)
6
VS– + 1.5
V
10
nA
20
µA
VS– + 1
V
–10
Power-down quiescent current
12
Turn-on time delay
1.3
µs
Turn-off time delay
2.5
µs
Average of rising and falling slew rate.
ΔVOS = VOS at specified CMIR VCM – VOS at midsupply VCM.
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6.6 Typical Characteristics: VS = ±5 V
TA ≈ 25°C, A1 input common-mode voltage (VCM) = midsupply, VREF = midsupply, RF (connected between
VOUT+ and VFB) = 0 Ω, RG = open, differential gain (G) = 2 V/V, RL (differential load) = 2 kΩ, and RREF = 0 Ω (unless
otherwise noted).
3
Normalized Gain (dB)
Normalized Gain (dB)
0
-3
-6
G = 2 V/V
G = 2 V/V
G = 4 V/V
G = 10 V/V
-9
-12
1M
10M
Frequency (Hz)
100M
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
1M
G = 2 V/V
G = 2 V/V
G = 4 V/V
G = 10 V/V
10M
Frequency (Hz)
D003
VOD = 20 mVPP
Figure 6-1. Small-Signal Frequency Response
Figure 6-2. Large-Signal Frequency Response
A1, Magnitude
-45
A1, Phase
A2, Magnitude -60
A2, Phase
-75
140
120
100
-90
80
-105
60
-120
40
-135
20
-150
0
-165
-20
-180
1
10
100
1k
10k 100k 1M
Frequency (Hz)
CMRR and PSRR (dB)
-30
Open-Loop Gain Phase (q)
Open-Loop Gain Magnitude (dB)
180
160
10M 100M
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
100
1k
10k
100k
Frequency (Hz)
1M
10M
D054
Simulation, A1 and A2
Figure 6-4. CMRR and PSRR vs Frequency
Figure 6-3. Open-Loop Gain And Phase vs Frequency
400
100
A1
A2
Closed-Loop Output Impedance (:)
Open-Loop Output Impedance (:)
CMRR
PSRR+
PSRR
D058
Simulation
100
10
4
10
D006
VOD = 10 VPP
100
1k
10k
100k
1M
Frequency (Hz)
10M
100M
1G
10
1
0.1
0.01
0.001
0.0001
10k
D059
Simulation
A1
A2
100k
1M
Frequency (Hz)
10M
100M
D053
Simulation
Figure 6-5. Open-Loop Output Impedance vs Frequency
Figure 6-6. Closed-Loop Output Impedance vs Frequency
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6.6 Typical Characteristics: VS = ±5 V (continued)
625
150
500
125
A1 Input VOS Shift From 25qC (PV)
375
250
125
0
-125
-250
-375
-500
-625
-40
-25
-10
5
20 35 50 65
Temperature (qC)
80
95
100
75
50
25
0
-25
-50
-75
-100
-125
-150
-40
110 125
-25
-10
5
D038
20 35 50 65
Temperature (qC)
99 units
Figure 6-7. Differential Output Offset Voltage vs Temperature
D061
35
20
105
A1 Input Bias Current Offset (nA)
120
2.75
2.5
2.25
2
1.75
1.5
1.25
1
0.75
20 35 50 65
Temperature (qC)
80
95
3.0
2.5
Figure 6-10. A1 Input Offset Voltage Drift Histogram
3
5
2.0
–40°C to +125°C, over 115 units
3.25
-10
1.5
A1 Input VOS Drift (PV/°C)
Figure 6-9. Differential Output Offset Voltage Drift Histogram
-25
1.0
D062
D040
–40°C to +125°C, over 115 units
0.5
-40
0
-3.0
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
-6
0
-7
5
-8
10
3
0.5
15
6
-1.0
9
25
-1.5
12
30
-2.0
15
-2.5
18
Differential VOS Drift (PV/°C)
VS = 10 V
VS = 5 V
VS = 3.3 V
40
# of units in each bin
21
# of units in each bin
110 125
45
VS = 10 V
VS = 5 V
VS = 3.3 V
24
A1 Input Bias Current (PA)
95
Figure 6-8. A1 Input Offset Voltage vs Temperature
27
110 125
90
75
60
45
30
15
0
-15
-30
-40
D044
32 units
-25
-10
5
20 35 50 65
Temperature (qC)
80
95
110 125
D063
32 units
Figure 6-11. A1 Input Bias Current vs Temperature
8
80
99 units
-0.5
Differential Output VOS Shift From 25qC (PV)
TA ≈ 25°C, A1 input common-mode voltage (VCM) = midsupply, VREF = midsupply, RF (connected between
VOUT+ and VFB) = 0 Ω, RG = open, differential gain (G) = 2 V/V, RL (differential load) = 2 kΩ, and RREF = 0 Ω (unless
otherwise noted).
Figure 6-12. A1 Input Offset Current vs Temperature
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6.6 Typical Characteristics: VS = ±5 V (continued)
TA ≈ 25°C, A1 input common-mode voltage (VCM) = midsupply, VREF = midsupply, RF (connected between
VOUT+ and VFB) = 0 Ω, RG = open, differential gain (G) = 2 V/V, RL (differential load) = 2 kΩ, and RREF = 0 Ω (unless
otherwise noted).
0.5
3
90
2.5
60
2
30
0.2
0.1
0
-0.1
-0.2
-0.3
1.5
0
1
-30
VIN IB
VFB IB
IOS
0.5
-0.4
-0.5
-5
-4
-3
-2
-1
0
1
2
3
A1 Input Common-Mode Voltage (V)
4
0
-5
5
-60
-90
-4
-3
-2
-1
0
1
2
3
A1 Input Common-Mode Voltage (V)
D037
.
5
D045
Figure 6-14. A1 Input Bias Current and Input Offset Current vs
Input Common-Mode Voltage
30
80
20
60
A2 Input Bias Current (nA)
A2 Input Bias Current (nA)
4
.
Figure 6-13. A1 Input Offset Voltage vs Input Common-Mode
Voltage
10
0
-10
-20
-30
40
20
0
-20
-40
-60
-40
-50
-40
-25
-10
5
20 35 50 65
Temperature (qC)
80
95
-80
-5
110 125
-4
-3
-2
-1
0
1
2
3
A2 Input Common-Mode Voltage (V)
D046
Figure 6-15. A2 Input Bias Current vs Temperature
VIN u 2
VOD
8
6
Votlage (V)
4
2
0
-2
-4
-6
-8
-10
-12
0
200
400
600
5
D047
Figure 6-16. A2 Input Bias Current vs Input Common-Mode
Voltage
12
10
4
.
32 units
Voltage (V)
A1 Input Offset Current (nA)
0.3
A1 Input Bias Current (PA)
A1 Input Offset Voltage (mV)
0.4
800 1000 1200 1400 1600 1800 2000
Time (ns)
D026
20
17.5
15
12.5
10
7.5
5
2.5
0
-2.5
-5
-7.5
-10
-12.5
-15
-17.5
-20
VIN u 4
VOD
0
.
200
400
600
800 1000 1200 1400 1600 1800 2000
Time (ns)
D027
G = –4 V/V
Figure 6-17. Input Overdrive Recovery
Figure 6-18. Output Overdrive Recovery
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6.7 Typical Characteristics: VS = ±2.5 V
TA ≈ 25°C, A1 input common-mode voltage (VCM) = midsupply, VREF = midsupply, RF (connected between
VOUT+ and VFB) = 0 Ω, RG = open, differential gain (G) = 2 V/V, RL (differential load) = 2 kΩ, and RREF = 0 Ω (unless
otherwise noted).
3
Normalized Gain (dB)
Normalized Gain (dB)
0
-3
-6
-9
G = 2 V/V
G = 2 V/V
G = 4 V/V
G = 10 V/V
-12
1M
10M
Frequency (Hz)
100M
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
1M
G = 2 V/V
G = 2 V/V
G = 4 V/V
G = 10 V/V
10M
Frequency (Hz)
D002
VOD = 20 mVPP
Figure 6-19. Small-Signal Frequency Response
Figure 6-20. Large-Signal Frequency Response
1
-1
Normalized Gain (dB)
Normalized Gain (dB)
0
-2
-3
-4
-5
-6
-7
CL = 0 pF
CL = 5 pF
CL = 10 pF
-8
1M
10M
Frequency (Hz)
100M
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
1M
CL = 0 pF
CL = 5 pF
CL = 10 pF
10M
Frequency (Hz)
D009
VOD = 20 mVPP
-15
-20
Input to Output Isolation (dBc)
Normalized Gain (dB)
Figure 6-22. Large-Signal Frequency Response Over CL
VOD = 20 mVPP
VOD = 1 VPP
VOD = 2 VPP
VOD = 5 VPP
-25
-30
-35
-40
-45
-50
-55
VIN = 10 mVPP
VIN = 1 VPP
-60
10M
Frequency (Hz)
-65
100k
100M
1M
10M
Frequency (Hz)
D011
.
100M
D052
.
Figure 6-23. Frequency Response Over Differential Output
Voltage, VOD
10
D010
VOD = 5 VPP
Figure 6-21. Small-Signal Frequency Response Over CL
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
1M
D005
VOD = 5 VPP
Figure 6-24. Input-to-Output Disable Mode Isolation
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6.7 Typical Characteristics: VS = ±2.5 V (continued)
TA ≈ 25°C, A1 input common-mode voltage (VCM) = midsupply, VREF = midsupply, RF (connected between
VOUT+ and VFB) = 0 Ω, RG = open, differential gain (G) = 2 V/V, RL (differential load) = 2 kΩ, and RREF = 0 Ω (unless
otherwise noted).
15 kHz, HD2
15 kHz, HD3
100 kHz, HD2
100 kHz, HD3
-65
1 MHz, HD2
1 MHz, HD3
HD2, G = 2 V/V
HD3, G = 2 V/V
HD2, G = 2 V/V
-75
-85
Harmonic Distortion (dBc)
Harmonic Distortion (dBc)
-75
-95
-105
-115
-125
-135
-145
-85
-95
-105
-115
-125
-135
-145
-155
200
-155
10k
1k
Differential Load, RL (:)
100k
Frequency (Hz)
D014
VOD = 5 VPP
CL = 0 pF
0
100
200
CL = 5 pF
D018
Figure 6-26. Harmonic Distortion vs Frequency and Gain
Differential Output Voltage (V)
Differential Output Voltage (mV)
150
125
100
75
50
25
0
-25
-50
-75
-100
-125
-150
-175
1M
VOD = 5 VPP
Figure 6-25. Harmonic Distortion vs Differential Load
CL = 10 pF
300
400
Time (ns)
500
600
3
2.5
2
1.5
1
0.5
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
700
CL = 0 pF
0
100
200
300
D020
VOD = 200 mVPP
CL = 5 pF
400 500 600
Time (ns)
CL = 10 pF
700
800
900 1000
D021
VOD = 5 VPP
Figure 6-27. Small-Signal Step Response Over CL
Figure 6-28. Large-Signal Step Response Over CL
6
10
VIN u 2
VOD
5
4
VIN u 4
VOD
7.5
3
5
Voltage (V)
2
Voltage (V)
HD3, G = 2 V/V
HD2, G = 4 V/V
HD3, G = 4 V/V
1
0
-1
-2
-3
2.5
0
-2.5
-5
-4
-7.5
-5
-6
-10
0
200
400
600
800 1000 1200 1400 1600 1800 2000
Time (ns)
D064
0
.
200
400
600
800 1000 1200 1400 1600 1800 2000
Time (ns)
D028
G = –4 V/V
Figure 6-29. Input Overdrive Recovery
Figure 6-30. Output Overdrive Recovery
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6.8 Typical Characteristics: VS = 1.9 V, –1.4 V
TA ≈ 25°C, A1 input common-mode voltage (VCM) = midsupply, VREF = midsupply, RF (connected between
VOUT+ and VFB) = 0 Ω, RG = open, differential gain (G) = 2 V/V, RL (differential load) = 2 kΩ, and RREF = 0 Ω (unless
otherwise noted).
3
Normalized Gain (dB)
Normalized Gain (dB)
0
-3
-6
G = 2 V/V
G = 2 V/V
G = 4 V/V
G = 10 V/V
-9
-12
1M
10M
Frequency (Hz)
100M
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
1M
G = 2 V/V
G = 2 V/V
G = 4 V/V
G = 10 V/V
10M
Frequency (Hz)
D001
VOD = 20 mVPP
Figure 6-31. Small-Signal Frequency Response
Figure 6-32. Large-Signal Frequency Response
5
VIN u 2
VOD
4
3
Voltage (V)
Voltage (V)
2
1
0
-1
-2
-3
-4
-5
0
200
400
600
800 1000 1200 1400 1600 1800 2000
Time (ns)
D065
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
VIN u 4
VOD
0
200
.
400
600
800 1000 1200 1400 1600 1800 2000
Time (ns)
D029
G = –4 V/V
Figure 6-33. Input Overdrive Recovery
12
D006
VOD = 2 VPP
Figure 6-34. Output Overdrive Recovery
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6.9 Typical Characteristics: VS = 1.9 V, –1.4 V to ±5 V
TA ≈ 25°C, A1 input common-mode voltage (VCM) = midsupply, VREF = midsupply, RF (connected between
VOUT+ and VFB) = 0 Ω, RG = open, differential gain (G) = 2 V/V, RL (differential load) = 2 kΩ, and RREF = 0 Ω (unless
otherwise noted).
1
1
0
0
-1
Normalized Gain (dB)
Normalized Gain (dB)
2
-1
-2
-3
-4
-5
-6
-7
-2
-3
-4
-5
-6
-7
VS = 3.3 V
VS = 5 V
VS = 10 V
-8
-9
1M
10M
Frequency (Hz)
-9
1M
100M
D012
VIN = 10 mVPP, VREF = 0 V, measured at VOUT+
Harmonic Distortion (dBc)
Harmonic Distortion (dBc)
-95
-100
-120
-130
-140
-105
-110
HD2, VS = 10 V
HD3, VS = 10 V
HD2, VS = 5 V
HD3, VS = 5 V
HD2, VS = 3.3 V
HD3, VS = 3.3 V
-115
-120
-125
-130
-135
-140
-150
-145
100k
Frequency (Hz)
-150
10k
1M
D017
VOD = 10 VPP for 10-V supply, VOD = 5 VPP for 5-V supply
100k
Frequency (Hz)
1M
D066
VOD = 2 VPP
Figure 6-37. Harmonic Distortion vs Frequency
Figure 6-38. Harmonic Distortion vs Frequency
-105
-90
-115
VS = 5 V, HD3
VS = 3.3 V, HD2
VS = 3.3 V, HD3
VS = 10 V, HD2
VS = 10 V, HD3
VS = 5 V, HD2
-95
Harmonic Distortion (dBc)
VS = 10 V, HD2
VS = 10 V, HD3
VS = 5 V, HD2
-110
Harmonic Distortion (dBc)
D013
-90
HD2, VS = 10 V
HD3, VS = 10 V
HD2, VS = 5 V
HD3, VS = 5 V
-110
-160
10k
100M
Figure 6-36. VREF Small-Signal Frequency Response
-80
-100
10M
Frequency (Hz)
VIN = 0 V, VREF = 20 mVPP, measured at VOUT–
Figure 6-35. A1 Small-Signal Frequency Response
-90
VS = 3.3 V
VS = 5 V
VS = 10 V
-8
-120
-125
-130
-135
-140
-145
-100
VS = 5 V, HD3
VS = 3.3 V, HD2
VS = 3.3 V, HD3
-105
-110
-115
-120
-125
-130
-135
-150
-140
-145
-155
1
10
Differential Output Voltage, VOD (VPP)
1
D015
10
Differential Output Voltage, VOD (VPP)
D016
Frequency = 50 kHz, G = –2 V/V
Frequency = 50 kHz
Figure 6-39. Harmonic Distortion vs Differential Output Voltage
Figure 6-40. Harmonic Distortion vs Differential Output Voltage
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6.9 Typical Characteristics: VS = 1.9 V, –1.4 V to ±5 V (continued)
125
6
100
5
Differential Output Voltage, VOD (V)
Differential Output Voltage, V OD (mV)
TA ≈ 25°C, A1 input common-mode voltage (VCM) = midsupply, VREF = midsupply, RF (connected between
VOUT+ and VFB) = 0 Ω, RG = open, differential gain (G) = 2 V/V, RL (differential load) = 2 kΩ, and RREF = 0 Ω (unless
otherwise noted).
75
50
25
0
-25
-50
-75
-100
-125
VS = 10 V
VS = 5 V
VS = 3.3 V
-150
0
100
200
300
400 500 600
Time (ns)
700
800
4
3
2
1
0
-1
-2
-3
VS = 10 V
VS = 5 V
VS = 3.3 V
-4
-5
-6
900 1000
0
100
200
300
D022
VOD = 200 mVPP
400 500
Time (ns)
600
700
800
900
D023
Figure 6-42. Large-Signal Step Response
Figure 6-41. Small-Signal Step Response
30
10
Input-Referred Current Noise (pA/—Hz)
Voltage Noise, nV/—Hz)
A1, A2, Input Referred
Total Output Referred
10
1
10
100
1k
Frequency (Hz)
10k
5
4
3
2
1
0.7
0.5
10
100k
100
1k
10k
Frequency (Hz)
D041
100k
1M
D043
1/f corner (A1) = 1.2 kHz, 1/f corner (A2) = 700 Hz
1/f corner (A1, A2) = 30 Hz, 1/f corner (output) = 49 Hz
Figure 6-44. Current Noise Density vs Frequency
Figure 6-43. Voltage Noise Density vs Frequency
65
7
VS = 10 V
VS = 5 V
VS = 3.3 V
60
55
4
50
45
Gain (dB)
Output Balance (dB)
A1, each input
A2, VREF
7
40
35
1
30
25
-2
20
15
10
100k
1M
Frequency (Hz)
10M
-5
1M
D055
Figure 6-45. Output Balance vs Frequency
TA = 40qC
TA = 25qC
TA = 85qC
TA = 125qC
10M
Frequency (Hz)
100M
D007
VS = 5 V, VOD = 20 mVPP
Figure 6-46. Small-Signal Frequency Response vs Temperature
14
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6.9 Typical Characteristics: VS = 1.9 V, –1.4 V to ±5 V (continued)
6
3.14
5
3.12
4
Quiescent Current (mA)
Output Saturation Voltage (V)
TA ≈ 25°C, A1 input common-mode voltage (VCM) = midsupply, VREF = midsupply, RF (connected between
VOUT+ and VFB) = 0 Ω, RG = open, differential gain (G) = 2 V/V, RL (differential load) = 2 kΩ, and RREF = 0 Ω (unless
otherwise noted).
3
2
TA = 40qC
TA = 25qC
TA = 85qC
TA = 125qC
1
0
-1
-2
-3
3.10
3.08
3.06
3.04
3.02
3.00
2.98
-4
2.96
-5
2.94
-6
0
5
10
15
20 25 30 35 40 45
Output Load Current (mA)
50
55
3
60
D031
4
5
6
7
8
9
10
Voltage Supply, VS (V)
11
12
13
D033
Figure 6-48. Quiescent Current vs Voltage Supply
VS = 10 V, single-ended output voltage and load current for A1
and A2
Figure 6-47. Output Saturation Voltage vs Output Load Current
20
4.00
3.25
3.00
2.75
2.50
2.25
-40
-25
-10
5
20 35 50 65
Temperature (qC)
80
95
TA = 40qC
TA = 25qC
TA = 85qC
TA = 125qC
18
16
14
12
10
8
6
4
110 125
3
4
5
6
D034
Figure 6-49. Quiescent Current vs Temperature
7
8
9
10
Voltage Supply, VS (V)
12
13
D035
Figure 6-50. Power-Down Quiescent Current vs Voltage Supply
1
1.5
3
VOD
PD
0.8
1
Output Voltage, VOD (V)
0.6
PD Bias Current (nA)
11
0.4
0.2
0
-0.2
-0.4
-0.6
2
0.5
1
0
0
-0.5
-1
-1
-2
PD Voltage (V)
3.50
Quiescent Current in Power Down (PA)
Quiescent Current (mA)
3.75
VS = 12.6 V
VS = 10 V
VS = 5 V
VS = 3.3 V
VS = 3 V
-0.8
-1.5
-1
-5
0
-4
-3
-2
-1
0
1
PD Voltage (V)
2
3
4
1
5
D049
VS = 10 V
Figure 6-51. Power-Down Bias Current vs Power-Down Voltage
2
3
4
5
6
Time (Ps)
7
8
9
-3
10
D050
VS = 5 V
Figure 6-52. Turnon and Turnoff Timing
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7 Detailed Description
7.1 Overview
The OPA862 is a 44-MHz, single-ended-to-differential amplifier suitable for use in high-input impedance analog
front-ends. This device offers a gain-bandwidth product (GBWP) of 400 MHz with a low output-referred voltage
noise of 8.3 nV/√ Hz while consuming only 3.1 mA of quiescent current. The OPA862 includes a REF pin for
output common-mode voltage control using amplifier 2 and a shutdown pin for low-power mode operation that
consumes only 12 µA of quiescent current.
The OPA862 can be configured for a single-ended-to-differential gain of 2 V/V without using any external
resistors. The device can be configured in gains other than 2 V/V by using only two external resistors
in the feedback loop of amplifier 1 (A1) and requires fewer external gain-setting resistors compared to a
fully differential amplifier (FDA). The noninverting input of A1 offers high input impedance (325 MΩ typical)
for interfacing single-ended sensors that often have a non-zero output impedance to differential input analogto-digital converters (ADCs). A combination of large 140-V/µs slew rate, 400-MHz GBWP, and nonlinearity
cancellation in the output stages of the two amplifiers results in exceptional distortion and settling performance
for 18-bit systems.
The OPA862 includes an internal capacitor CFILT in the feedback circuit of amplifier 2 (A2) that limits the device
bandwidth to approximately 44 MHz. Although the individual amplifiers have a GBWP of 200 MHz, because of
the architecture of the OPA862, the input and output signal bandwidth must not exceed approximately 44 MHz
to achieve good linearity. High GBWP amplifiers generally have high linearity because they can maintain high
loop gain. The simple architecture of the OPA862 (as compared to an FDA) has an inherent delay between
the outputs VOUT+ and VOUT– that primarily limits the linearity performance versus the high GBWP of the
individual amplifiers. The benefit of the CFILT capacitor is that the CFILT filters and minimizes the noise at the
output beyond the usable frequency of the OPA862.
The VREF pin can be used to set the output common-mode to a desired value. Section 7.4 describes various
configurations that the OPA862 can be used in.
7.2 Functional Block Diagram
VS+
OPA862
VFB
±
VIN
+
A1
VOUT+
CFILT
6 pF
RINT
700
RLINT
8.4 k
RINT
700
±
A2
PD
16
VOUT±
+
VREF
VS±
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7.3 Feature Description
7.3.1 Input and ESD Protection
The OPA862 is built using a high-speed complementary bipolar process. The internal junction breakdown
voltages are relatively low for these very small geometry devices. These breakdowns are reflected in Section
6.1. As shown in Figure 7-1 all device pins are protected with internal ESD protection diodes to the power
supplies.
These diodes provide moderate protection to input overdrive voltages beyond the supplies as well. The
protection diodes can typically support 10-mA continuous current. Where higher currents are possible (for
example, in systems with ±12-V supply parts driving into the OPA862), add current limiting series resistors in
series with the inputs to limit the current. Keep these resistor values as low as possible because high values can
degrade both noise performance and frequency response. The OPA862 has back-to-back ESD diodes between
the VIN and VFB pins. As a result, the differential input voltage between the VIN and VFB pins must be limited
to 0.7 V or less to keep from forward biasing these back-to-back ESD diodes. The diodes are robust enough
to survive transient conditions such as those common during slew conditions. In the event the differential input
voltage exceeds 0.7 V, these back-to-back diodes forward bias and protect the amplifier but the current must be
limited per the specifications in Section 6.1 to avoid permanent damage to these diodes or the amplifier.
VS+
OPA862
VFB
±
VOUT+
A1
+
RINT
700
VIN
RINT
700
Power Supply
ESD Cell
±
VOUT±
A2
VREF
+
VS±
PD
Figure 7-1. Internal ESD Protection
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7.3.2 Anti-Phase Reversal Protection
When the input common-mode voltage approaches or exceeds VS–, the base-collector junction of the input
transistors forward biases. This condition creates an output path parallel to the normal gm path of the transistors
that is opposite in phase to the gm path. When this parallel path starts to dominate, phase inversion occurs.
To protect against phase inversion, the OPA862 features anti-phase reversal (APR) protection Schottky diodes
on the input transistors. The Schottky diodes turn on at a voltage lower than the forward bias voltage of the
base-collector junction, thus preventing the forward bias and the phase-inversion at the base-collector junction of
the input transistors. Figure 7-2 shows a diagram of APR protection within the OPA862.
VS+
VIN
VFB
Internal Circuitry
Figure 7-2. Anti-Phase Reversal Protection
7.3.3 Precision and Low Noise
The OPA862 is laser trimmed for high DC precision. An important factor that reduces the DC precision of the
system that uses the OPA862 is the errors introduced by the bias currents of A2 flowing through the internal
feedback resistors, RINT; see Section 7.2. To minimize the error contribution from IB, the A2 amplifier of the
OPA862 features a unique IB cancellation mechanism. This IB cancellation mechanism is the reason why the IB
of A2 is orders of magnitude lower than the IB of A1. The DC errors are negligible for most applications because
of the nanoamperes of IB and very low IB drift of A2. However, despite being very low, if the IB errors of A2
are significant for an application, a 348-Ω RREF resistor can be used on the VREF input to cancel out the IB
errors. The tradeoff of using the RREF is that this resistor introduces noise that is amplified by a factor of two at
VOUT– because of the noise gain of two of A2. The CFILT capacitor (see Section 7.2) also helps filter out the flat
band noise contribution of RREF. The 700-Ω internal resistors were carefully chosen to balance low noise while
keeping the total power dissipation low by taking advantage of the low 3.1-mA quiescent current of the OPA862.
As shown in Figure 7-3, to get the equivalent 8.3-nV/√ Hz noise of the OPA862 with a typical FDA configuration,
the FDA must be less than 1 nV/√ Hz; such FDAs are often difficult to find or expensive. When RREF equals 0 Ω,
the typical error resulting from the IB of A2 appears as an input-referred offset of 3.5 µV at the VREF input, and
when RREF is 348 Ω, the differential output-referred noise increases from 8.3 nV/√ Hz to 9.6 nV/√ Hz.
Fully Differential Amplifier