RC4580IDRG4

Sample & Buy Product Folder Support & Community Tools & Software Technical Documents RC4580 SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 RC4580 Dual Audio Operational Amplifier 1 Features 3 Description • • • • • • • The RC4580 device is a dual operational amplifier that has been designed optimally for audio applications, such as improving tone control. It offers low noise, high gain bandwidth, low harmonic distortion, and high output current, all of which make the device ideally suited for audio electronics, such as preamplifiers, active filters, and industrial measurement equipment. When high output current is required, the RC4580 device can be used as a headphone amplifier. Due to its wide operating supply voltage, the RC4580 device can also be used in lowvoltage applications. 1 ±2-V to ±18-V Operating Voltage 0.8-μVrms Low Noise Voltage 12-MHz Gain Bandwidth Product 0.0005% Total Harmonic Distortion 5-V/μs Slew Rate Drop-In Replacement for NJM4580 Pin and Function Compatible with LM833, NE5532, NJM4558/9, and NJM4560/2/5 devices 2 Applications • • • • Audio Preamplifiers Active Filters Headphone Amplifiers Industrial Measurement Equipment Device Information(1) PART NUMBER RC4580 PACKAGE BODY SIZE (NOM) SOIC (8) 4.90 mm × 3.91 mm TSSOP (8) 3.00 mm × 4.40 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Noninverting Amplifier Schematic VIN RIN RG + VOUT RF 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. RC4580 SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 4 4 5 5 5 Absolute Maximum Ratings ...................................... Handling Ratings....................................................... Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Operating Characteristics.......................................... Typical Characteristics .............................................. Detailed Description .............................................. 8 7.1 Overview ................................................................... 8 7.2 Functional Block Diagram ......................................... 8 7.3 Feature Description................................................... 8 7.4 Device Functional Mode ........................................... 8 8 Application and Implementation .......................... 9 8.1 Typical Application ................................................... 9 9 Power Supply Recommendations...................... 12 10 Layout................................................................... 13 10.1 Layout Guidelines ................................................. 13 10.2 Layout Example .................................................... 13 11 Device and Documentation Support ................. 14 11.1 Trademarks ........................................................... 14 11.2 Electrostatic Discharge Caution ............................ 14 11.3 Glossary ................................................................ 14 12 Mechanical, Packaging, and Orderable Information ........................................................... 14 4 Revision History Changes from Revision C (March 2004) to Revision D Page • Added Applications, Device Information table, Pin Functions table, Handling Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. ................................................................................................................................................................ 1 • Removed Ordering Information table. .................................................................................................................................... 1 • Changed TA = 25°C to TA = –40°C to 125°C in condition statement for Electrical Characteristics table and Operational Characteristics table. .......................................................................................................................................... 5 2 Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 RC4580 www.ti.com SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 5 Pin Configuration and Functions D PACKAGE SOIC – 8 (TOP VIEW) – – – PW PACKAGE TSSOP – 8 (TOP VIEW) – – – Pin Functions PIN NAME NO. I/O DESCRIPTION 1IN+ 3 I Noninverting input 1IN- 2 I Inverting Input 1OUT 1 O Output 2IN+ 5 I Noninverting input 2IN- 6 I Inverting Input 2OUT 7 O Output VCC+ 8 — Positive Supply VCC- 4 — Negative Supply Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 3 RC4580 SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MAX UNIT VCC Supply voltage MIN ±18 V VI Input voltage (any input) ±15 V VID Differential input voltage ±30 V IO Output current ±50 mA TA Ambient temperature range –40 125 °C Tstg Storage temperature range –60 125 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 Handling Ratings Tstg V(ESD) (1) (2) MIN MAX UNIT –60 125 °C Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) 0 1000 Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) 0 1000 Storage temperature range Electrostatic discharge V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions MIN VCC+ Supply voltage VCC– VICR Input common-mode voltage range TA Operating free-air temperature MAX UNIT 2 16 –2 –16 –13.5 13.5 V –40 125 °C V 6.4 Thermal Information RC4580 THERMAL METRIC (1) D PW 8 PINS 8 PINS 163 RθJA Junction-to-ambient thermal resistance 109 RθJC(top) Junction-to-case (top) thermal resistance 55.7 38 RθJB Junction-to-board thermal resistance 49 90.6 ψJT Junction-to-top characterization parameter 10.6 1.3 ψJB Junction-to-board characterization parameter 48.6 88.9 RθJC(bot) Junction-to-case (bottom) thermal resistance — — (1) 4 UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 RC4580 www.ti.com SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 6.5 Electrical Characteristics VCC± = ±15 V, TA = –40°C to 125°C (unless otherwise noted) PARAMETER TEST CONDITIONS VIO Input offset voltage IIO Input offset current IIB Input bias current AVD Large-signal differential voltage amplification RL ≥ 2 kΩ, VO = ±10 V VCM Output voltage swing RL ≥ 2 kΩ VICR Common-mode input voltage CMRR Common-mode rejection ratio kSVR Supply-voltage rejection ratio (1) ICC Total supply current (all amplifiers) (1) MIN RS = < 10 kΩ TYP MAX UNIT 0.5 3 mV 5 200 nA 100 500 nA 90 110 dB ±12 ±13.5 V ±12 ±13.5 V RS ≤ 10 kΩ 80 110 dB RS ≤ 10 kΩ 80 110 6 dB 9 mA Measured with VCC± varied simultaneously 6.6 Operating Characteristics VCC± = ±15 V, TA = –40°C to 125°C (unless otherwise noted) PARAMETER TEST CONDITIONS TYP UNIT SR Slew rate at unity gain RL ≥ 2 kΩ 5 V/μs GBW Gain-bandwidth product f = 10 kHz 12 MHz THD Total harmonic distortion VO = 5 V, RL = 2 kΩ, f = 1 kHz, AVD = 20 dB Vn Equivalent input noise voltage RIAA, RS ≤ 2.2 kΩ, 30-kHz LPF 0.0005% 0.8 μVrms Maximum Output Voltage Swing, VO (V) Maximum Output Voltage Swing, VO (V) 6.7 Typical Characteristics Frequency (kHz) Load Resistance, RL (Ω) Output Voltage Swing (V) Equivalent Input Noise Voltage, Vn (nV/ ) Figure 1. Maximum Output Voltage Swing vs Load Resistance Figure 2. Maximum Ouput Voltage Swing vs Frequency Output Current, IO (mA) Frequency (Hz) Figure 3. Output Voltage Swing vs Output Current Figure 4. Equivalent Input Noise Voltage vs Frequency Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 5 RC4580 SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 www.ti.com Operating Current, ICC (mA) Output Voltage Swing, VO (V) Typical Characteristics (continued) Ambient Temperature, TA (°C) Figure 6. Output Voltage Swing vs Temperature Input Offset Voltage, VIO (V) Maximum Output Voltage Swing, VO (V) Ambient Temperature, TA (°C) Figure 5. Operating Current vs Temperature – Operating Current (mA) Operating Voltage, VCC (V) Figure 8. Input Bias Current vs Temperature Maximum Output Voltage Swing, VO (V) Ambient Temperature, TA (°C) Figure 7. Input Offset Voltage vs Temperature – Operating Voltage, VCC (V) Operating Voltage, VCC (V) Figure 9. Maximum Output Voltage Swing vs Operating Voltage 6 Figure 10. Operating Current vs Operating Voltage Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 RC4580 www.ti.com SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 Phase (deg) Voltage Gain (dB) Total Harmonic Distortion, THD (%) Typical Characteristics (continued) Output Voltage, VO (V) Frequency (Hz) Figure 11. Total Harmonic Distortion vs Output Voltage Figure 12. Voltage Gain, Phase vs Frequency Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 7 RC4580 SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 www.ti.com 7 Detailed Description 7.1 Overview The RC4580 device is a dual operational amplifier that has been designed optimally for audio applications, such as improving tone control. It offers low noise, high gain bandwidth, low harmonic distortion, and high output current, all of which make the device ideally suited for audio electronics, such as preamplifiers, active filters, and industrial measurement equipment. When high output current is required, the RC4580 device can be used as a headphone amplifier. Due to its wide operating supply voltage, the RC4580 device can also be used in lowvoltage applications. 7.2 Functional Block Diagram 7.3 Feature Description 7.3.1 Unity-Gain Bandwidth The unity-gain bandwidth is the frequency up to which an amplifier with a unity gain may be operated without greatly distorting the signal. The RC4580 device has a 12-MHz unity-gain bandwidth. 7.3.2 Common-Mode Rejection Ratio The common-mode rejection ratio (CMRR) of an amplifier is a measure of how well the device rejects unwanted input signals common to both input leads. It is found by taking the ratio of the change in input offset voltage to the change in the input voltage, then converting to decibels. Ideally the CMRR is infinite, but in practice, amplifiers are designed to have it as high as possible. The CMRR of the RC4580 device is 110 dB. 7.3.3 Slew Rate The slew rate is the rate at which an operational amplifier can change its output when there is a change on the input. The RC4580 device has a 5-V/ms slew rate. 7.4 Device Functional Mode The RC4580 device is powered on when the supply is connected. Each device can be operated as a singlesupply operational amplifier or dual-supply amplifier depending on the application. 8 Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 RC4580 www.ti.com SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Typical Application Some applications require differential signals. Figure 13 shows a simple circuit to convert a single-ended input of 2 V to 10 V into differential output of ±8 V on a single 15-V supply. The output range is intentionally limited to maximize linearity. The circuit is composed of two amplifiers. One amplifier acts as a buffer and creates a voltage, VOUT+. The second amplifier inverts the input and adds a reference voltage to generate VOUT–. Both VOUT+ and VOUT– range from 2 V to 10 V. The difference, VDIFF, is the difference between VOUT+ and VOUT–. R2 15 V R1 VOUT+ ± R3 VREF 12 V R4 VDIFF + VOUT+ + VIN Figure 13. Schematic for Single-Ended Input to Differential Output Conversion Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 9 RC4580 SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 www.ti.com Typical Application (continued) 8.1.1 Design Requirements The design requirements are as follows: • Supply voltage: 15 V • Reference voltage: 12V • Input: 2 V to 10 V • Output differential: ±8 V 8.1.2 Detailed Design Procedure The circuit in Figure 13 takes a single-ended input signal, VIN, and generates two output signals, VOUT+ and VOUT– using two amplifiers and a reference voltage, VREF. VOUT+ is the output of the first amplifier and is a buffered version of the input signal, VIN (see Equation 1). VOUT– is the output of the second amplifier which uses VREF to add an offset voltage to VIN and feedback to add inverting gain. The transfer function for VOUT– is Equation 2. VOUT+ = VIN (1) æ R 44 ö æ R22 ö R2 VOUT - VINin ´ 2 out - = VREF ref ´ ç ÷ ´ ç1 + ÷ + R 44 ø è R11 ø R11 è R33+ (2) The differential output signal, VDIFF, is the difference between the two single-ended output signals, VOUT+ and VOUT–. Equation 3 shows the transfer function for VDIFF. By applying the conditions that R1 = R2 and R3 = R4, the transfer function is simplified into Equation 6. Using this configuration, the maximum input signal is equal to the reference voltage and the maximum output of each amplifier is equal to the VREF. The differential output range is 2×VREF. Furthermore, the common mode voltage will be one half of VREF (see Equation 7). æ öæ æ R ö R4 R2 ö VD IF F = V O U T + - V O U T - = VIN ´ ç 1 + 2 ÷ - VR E F ´ ç ÷ ç1 + ÷ R1 ø R1 ø è è R3 + R4 ø è VOUT+ = VIN VOUT– = VREF – VIN VDIFF = 2×VIN – VREF (3) (4) (5) (6) + VOUT - ö 1 æV Vcm = ç OUT + ÷ = VREF 2 è ø 2 (7) 8.1.2.1 Amplifier Selection Linearity over the input range is key for good dc accuracy. The common mode input range and the output swing limitations determine the linearity. In general, an amplifier with rail-to-rail input and output swing is required. Bandwidth is a key concern for this design. Because the RC4580 device has a bandwidth of 12 MHz, this circuit will only be able to process signals with frequencies of less than 12 MHz. 8.1.2.2 Passive Component Selection Because the transfer function of VOUT– is heavily reliant on resistors (R1, R2, R3, and R4), use resistors with low tolerances to maximize performance and minimize error. This design used resistors with resistance values of 36 kΩ with tolerances measured to be within 2%. But, if the noise of the system is a key parameter, the user can select smaller resistance values (6 kΩ or lower) to keep the overall system noise low. This ensures that the noise from the resistors is lower than the amplifier noise. 10 Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 RC4580 www.ti.com SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 Typical Application (continued) 8.1.3 Application Curves 16 14 12 12 8 10 VOUT+ (V) VDIFF (V) The measured transfer functions in Figure 14, Figure 15, and Figure 16 were generated by sweeping the input voltage from 0 V to 12 V. However, this design should only be used between 2 V and 10 V for optimum linearity. 4 0 8 6 ±4 4 ±8 2 ±12 0 0 2 4 6 8 10 VIN (V) 12 0 2 4 6 8 10 VIN (V) C003 Figure 14. Differential Output Voltage vs Input Voltage 12 C001 Figure 15. Positive Output Voltage vs Input Voltage 12 10 VOUTt (V) 8 6 4 2 0 0 2 4 6 8 VIN (V) 10 12 C002 Figure 16. Positive Output Voltage vs Input Voltage Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 11 RC4580 SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 www.ti.com 9 Power Supply Recommendations The RC4580 device is specified for operation over the range of ±2 to ±16 V; many specifications apply from 40°C to 125°C. The Typical Characteristics section presents parameters that can exhibit significant variance with regard to operating voltage or temperature. CAUTION Supply voltages outside of the ±18 V range can permanently damage the device (see the Absolute Maximum Ratings). Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high impedance power supplies. For more detailed information on bypass capacitor placement, refer to the Layout Guidelines. 12 Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 RC4580 www.ti.com SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 10 Layout 10.1 Layout Guidelines • • • • • • For best operational performance of the device, use good PCB layout practices, including: Noise can propagate into analog circuitry through the power pins of the circuit as a whole and the operational amplifier. Bypass capacitors are used to reduce the coupled noise by providing low impedance power sources local to the analog circuitry. – Connect low-ESR, 0.1-μF ceramic bypass capacitors between each supply pin and ground, placed as close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single supply applications. Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes. A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital and analog grounds, paying attention to the flow of the ground current. For more detailed information, refer to Circuit Board Layout Techniques, (SLOA089). To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular as opposed to in parallel with the noisy trace. Place the external components as close to the device as possible. Keeping RF and RG close to the inverting input minimizes parasitic capacitance, as shown in Layout Example. Keep the length of input traces as short as possible. Always remember that the input traces are the most sensitive part of the circuit. Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce leakage currents from nearby traces that are at different potentials. 10.2 Layout Example VIN RIN RG + VOUT RF Figure 17. Operational Amplifier Schematic for Noninverting Configuration Place components close to device and to each other to reduce parasitic errors Run the input traces as far away from the supply lines as possible VS+ RF OUT1 VCC+ GND IN1í OUT2 VIN IN1+ IN2í VCCí IN2+ RG GND RIN Use low-ESR, ceramic bypass capacitor Only needed for dual-supply operation GND VS(or GND for single supply) Ground (GND) plane on another layer Figure 18. Operational Amplifier Board Layout for Noninverting Configuration Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 13 RC4580 SLOS412D – APRIL 2003 – REVISED NOVEMBER 2014 www.ti.com 11 Device and Documentation Support 11.1 Trademarks All trademarks are the property of their respective owners. 11.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 14 Submit Documentation Feedback Copyright © 2003–2014, Texas Instruments Incorporated Product Folder Links: RC4580 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) RC4580ID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 R4580I RC4580IDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 R4580I RC4580IDRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 R4580I RC4580IP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 RC4580IP RC4580IPW ACTIVE TSSOP PW 8 150 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 R4580I RC4580IPWR ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 R4580I (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of