REF1112AIDBZTG4

Product Folder Order Now Support & Community Tools & Software Technical Documents REF1112 SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 REF1112 10ppm/°C, 1-μA, 1.25-V Shunt Voltage Reference 1 Features 3 Description • • • The REF1112 device is a two-terminal shunt reference designed for power- and space-sensitive applications. The REF1112 features an operating current of 1 μA in a SOT23-3 package and is an improved, lower power solution for designs currently using voltage references in larger packages, such as the REF1004 and LT1004. The REF1112 is specified from –40°C to +85°C with operation extending from –40°C to +125°C. 1 Small Package: SOT23-3 Fixed Reverse Breakdown Voltage of 1.25 V Key Specifications – Output Voltage Tolerance: ±0.2% (Maximum) – Low Output Noise (0.1 Hz to 10 Hz): 25 μVpp (Typical) – Temperature Range: −40°C to +125°C – Operating Current Range: 1.2 μA to 5 mA – Low Temperature Coefficient From 0°C to +70°C: 30ppm/°C (Maximum) – Low Temperature Coefficient From –40°C to +85°C: 50ppm/°C (Maximum) Device Information(1) PART NUMBER 2 Applications • • • • • The REF1112 complements other 1-μA components from Texas Instruments including the OPA349 and TLV240x low-power operational amplifiers, and the TLV349x micropower voltage comparator. Battery-Powered Instruments Building Security Sensors Medical Equipment Field Transmitters Calibrators SPACER Shunt Reference Application Schematic REF1112 PACKAGE SOT-23 (3) BODY SIZE (NOM) 2.92 mm × 1.3 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Pinout VS VO 1 IREF + ILOAD RBIAS 3 NC ILOAD GND 2 VOUT IREF SOT23 RLOAD (1) RBIAS = NC indicates the pin should be left unconnected or connected to GND VS − VD ILOAD + IREF 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. REF1112 SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 6.1 6.2 6.3 6.4 6.5 6.6 3 3 3 4 4 5 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description .............................................. 7 7.1 Overview ................................................................... 7 7.2 Functional Block Diagram ......................................... 7 7.3 Feature Description................................................... 7 7.4 Device Functional Modes.......................................... 7 8 Application and Implementation .......................... 8 8.1 Application Information.............................................. 8 8.2 Typical Applications .................................................. 8 9 Power Supply Recommendations...................... 12 10 Layout................................................................... 12 10.1 Layout Guidelines ................................................. 12 10.2 Layout Example .................................................... 12 11 Device and Documentation Support ................. 13 11.1 11.2 11.3 11.4 11.5 Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 13 13 13 13 13 12 Mechanical, Packaging, and Orderable Information ........................................................... 13 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision C (March 2008) to Revision D Page • Added Device Information table, Pin Configuration and Functions section, Absolute Maximum Ratings table, ESD Ratings table, Recommended Operating Conditions table, Thermal Information table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. ................................................................................................................................................................................... 1 • Changed Features section .................................................................................................................................................... 1 • Changed key graphic text note from: NC indicates pin should be left unconnected to: NC indicates the pin should be left unconnected or connected to GND ................................................................................................................................. 1 • Removed the Package/Ordering Information table and moved the information over to the Mechanical, Packaging, and Orderable Information section ....................................................................................................................................... 13 2 Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 REF1112 www.ti.com SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 5 Pin Configuration and Functions DBZ Package 3-Pin SOT-23 Top View VO 1 3 NC GND 2 SOT23 Pin Functions PIN NAME NO. I/O DESCRIPTION Vo 1 I/O Shunt Current/Voltage input GND 2 O Ground connection NC 3 - Must float or connect to GND 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MAX UNIT Reverse breakdown current MIN 10 mA Forward current 10 mA 125 °C 150 °C 150 °C Operating temperature –55 Junction temperature Storage temperature, Tstg (1) –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN IREF Reverse current TA Operating temperature MAX UNIT 0.0012 5 mA –40 125 °C Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 3 REF1112 SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 www.ti.com 6.4 Thermal Information REF1112 THERMAL METRIC (1) DBZ (SOT-23) UNIT 3 PINS RθJA Junction-to-ambient thermal resistance 219 °C/W RθJC(top) Junction-to-case (top) thermal resistance 99 °C/W RθJB Junction-to-board thermal resistance 79 °C/W ψJT Junction-to-top characterization parameter 6.7 °C/W ψJB Junction-to-board characterization parameter 79.6 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.5 Electrical Characteristics VR = 1.25 V, TA = +25°C, IREF = 1.2 μA and CLOAD = 10 nF, unless otherwise noted. PARAMETER VR Reverse breakdown voltage Temperature coefficient ΔVR IRMIN TEST CONDITIONS IREF = 1.2 µA MIN TYP MAX 1.2475 1.25 1.2525 –0.2% 1.2 μA ≤ IREF ≤ 5 mA, TA = 0°C to +70°C 10 30 1.5 μA ≤ IREF ≤ 5 mA, TA = –40°C to +85°C 15 50 ppm/°C 1.5 μA ≤ IREF ≤ 5 mA, TA = –40°C to +125°C 15 1 1.2 µA ppm/mA Minimum operating current 1.2 μA ≤ IREF ≤ 5 mA 30 100 ZR Reverse dynamic impedance 1.2 μA ≤ IREF ≤ 5 mA 0.037 0.125 eN Low-frequency noise (1) 0.1 Hz ≤ IREF ≤ 10 Hz 25 VHYST Thermal hysteresis (2) ΔVR Long-term stability (1) (2) 4 V 0.2% Reverse breakdown voltage change with current ΔVR/ΔIR UNIT +25°C ± 0.1°C Ω μVPP 100 ppm 60 ppm/kHr Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1 Hz and a 4-pole, low-pass Chebyshev filter at 10 Hz. Thermal hysteresis is defined as the change in output voltage after operating the device at +25°C, cycling the device through the specified temperature range, and returning to +25°C. Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 REF1112 www.ti.com SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 6.6 Typical Characteristics At TA = +25°C, IREF = 10 μA and CLOAD = 10 nF, unless otherwise noted. 10K 1.0 −40°C ≤ TA ≤ 125°C TA = 25°C 0.8 Forward Voltage (V) Reverse Current (μA) 1K Voltage Regulation Region 100 10 1 0.6 Behaves as standard silicon diode 0.4 0.2 0.1 0.01 0.00 0.0 0.25 0.50 0.75 1.00 1.25 0.01 0.001 1.50 Reverse Voltage (V) 1.255 Output Voltage Change (mV) 0.5 Reverse Voltage (V) 1.254 1.253 1.252 1.251 1.250 1.249 −40°C ≤ TA ≤ 125°C 0.4 0.3 0.2 0.1 0.0 −35 −15 5 25 45 65 85 105 125 0.001 0.01 Temperature (°C) Figure 3. Temperature Drift 0.1 Reverse Current (mA) 1 10 Figure 4. Reverse Voltage Change vs Current 10k 100 TA = +25°C Dynamic Impedance (Ω) f = 10Hz 10 1 0.1 1k IREF = 10μA 100 10 IREF = 5mA 1 Ω) −40°C ≤ TA ≤ 125°C Dynamic Impedance (Ω) 10 Figure 2. Forward Characteristics Figure 1. Reverse Characteristics 1.248 −55 0.1 1.0 Forward Current (mA) 0.1 0.01 0.01 0.001 0.01 0.1 1 10 1 Reverse Current (mA) Figure 5. Reverse Dynamic Impedance 10 100 1k Frequency (Hz) 10k Figure 6. Reverse Dynamic Impedance Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 100k 5 REF1112 SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 www.ti.com Typical Characteristics (continued) At TA = +25°C, IREF = 10 μA and CLOAD = 10 nF, unless otherwise noted. TEMPERATURE DRIFT DISTRIBUTION 25 50 0°C to +70°C 40 Distribution (%) Distribution (%) 20 15 10 5 30 20 10 0 1.2475 1.2500 0 1.2525 0 5 10 15 20 25 30 Reverse Breakdown Voltage (V) Drift (ppm/°C) Figure 7. Reverse Breakdown Voltage Distribution Figure 8. Temperature Drift Distribution 25 35 LOW-FREQUENCY NOISE, 0.1 to 10Hz −40°C to +85°C 15 10μV/div Distribution (%) 20 10 5 0 0 5 10 15 20 25 30 Drift (ppm/°C) 35 40 45 50 1.0s/div Figure 10. Low-Frequency Noise, 0.1 to 10Hz Figure 9. Temperature Drift Distribution CLOAD = 0.01μF 2V Voltage (V) 1V CLOAD = 0.1μF 1V VIN VOUT 0V VIN VOUT 375kΩ VOUT 0.01μF 5V Voltage (V) 2V 0V 375kΩ VOUT 0.1μF 5V VIN VIN 0V 0V 10ms/div 25ms/div Figure 11. Response Time 6 IREF Figure 12. Response Time Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 REF1112 www.ti.com SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 7 Detailed Description 7.1 Overview The REF1112 is a 2-terminal bandgap reference diode designed for high accuracy with outstanding temperature characteristics at low operating currents. Precision thin-film resistors result in 0.2% initial voltage accuracy and 50ppm/°C maximum temperature drift. The REF1112 is specified from –40°C to +85°C, with operation from –40°C to +125°C, and is offered in a SOT23-3 package. 7.2 Functional Block Diagram 7.3 Feature Description The REF1112 device is effectively a precision Zener diode. The part requires a small quiescent current for regulation, and regulates the output voltage by shunting more or less current to ground, depending on input voltage and load. The only external component requirement are an resistor between the cathode and the input voltage to set the input current and an external capacitor at the output to maintain stability under varying loads. 7.4 Device Functional Modes The REF1112 device is a fixed output voltage part where the feedback is internal. Therefore, the part can only operate in a closed-loop mode and the output voltage cannot be adjusted. The output voltage will remain in regulation as long as IREF is between IREFMIN (see Electrical Characteristics) and IREFMAX is 5 mA. A proper selection of the external resistor for input voltage range and load current range will ensure these conditions are met. Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 7 REF1112 SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 www.ti.com 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information Typical connections for the REF1112 are shown in Figure 13. A minimum 1-μA bias current is required to maintain a stable output voltage and can be provided with a resistor connected to the supply voltage. IBIAS depends on the values selected for RBIAS and VS, and will vary as a sum of the minimum operating current and the load current. To maintain stable operation, the value of RBIAS must be low enough to maintain the minimum operating current at the minimum and maximum load and supply voltage levels. A 0.1-μF load capacitor is recommended to maintain stability under varying load conditions. A minimum 0.01-μF load capacitor is required for stable operation. Start-up time for the REF1112 will be affected, depending on the value of load capacitance and the bias currents being used. A 1-μF power-supply bypass capacitor is recommended to minimize supply noise within the circuit. The REF1112 shunt voltage reference provides a versatile function for low power and space-conservative applications. 8.2 Typical Applications 8.2.1 Shunt Regulator VS RBIAS IBIAS = IREF + ILOAD VREF 1μF ILOAD 0.1μF IREF IBIAS = VS − VREF RBIAS Figure 13. Typical Connections 8.2.1.1 Design Requirements Table 1. Design Parameters DESIGN PARAMETER 8 EXAMPLE VALUE Supply voltage 3V Cathode current (IREF) 1.2 µA Load Current (ILOAD) 50uA Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 REF1112 www.ti.com SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 8.2.1.2 Detailed Design Procedure When using the REF1112 as a reference, determine the following: • Supply voltage range • Current source resistance • Reference voltage accuracy To design using the REF1112, is it important to ensure that the VS is larger than VREF. The resistor RBIAS sets the cathode current of the REF1112, IR. Ensure that this current remains in the operational region of the part for the entire VS and load range. Using this information, select a RBIAS such that: IREFMIN < IREF < IREFMAX where IREFMAX = 5 mA. In this application the IREF is the operating current of the REF1112 plus the maximum possible ILOAD under noload conditions. 8.2.2 MicroPOWER 3-μA, 1-V Voltage Reference 3V 795kΩ 250kΩ VREF 0.1μF 3V TLV2401 VOUT = 1V REF1112 1MΩ Copyright © 2018, Texas Instruments Incorporated Figure 14. MicroPOWER 3-μA, 1-V Voltage Reference 8.2.2.1 Design Requirements The REF1112 can be scaled to provide extremely low power reference voltages. Figure 14 shows the REF1112 used as a 1-V VOUT, 3-μA voltage reference. 8.2.2.2 Detailed Design Procedure Set RBIAS such that the current through the shunt reference, IREF, is greater than IREFMIN + ILOAD. Use a resistor divider to set the required voltage to the input of the amplifier. The TLV2401 requires an input bias current maximum of 350 pA which allows the use of larger resistor values to save power. Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 9 REF1112 SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 www.ti.com 8.2.3 2.5-V Reference on 1 μA 3V RSET VOUT = 2.5V 0.1μF RLOAD 0.1μF Figure 15. 2.5-V Reference on 1 μA 8.2.3.1 Design Requirements Create a 2.5-V reference that consumes 1 µA of IREF. 8.2.3.2 Detailed Design Procedure Figure 15 shows the REF1112 used as a 2.5-V reference on 1 μA. This is done by stacking the REF1112 in series. VOUT = 2 × VREF where • VREF is the reference voltage (1) In this case, VOUT = 2 × 1.25 V = 2.5 V The IBIAS is still 1 µA because the stacked REF1112 are in series. 8.2.4 Adjustable Voltage Shunt Reference For applications requiring a stable voltage reference capable of sinking higher than 5 mA of current, a REF1112 combined with an OPA347 can sink up to 10 mA of current. This configuration is shown in Figure 16, and through appropriate selection of R1 and R2, can be used to provide a wide range of stable reference voltages. VS RSET IBIAS 2.5V R1 10kΩ 10kΩ 0.01μF OPA347 1.25V 0.1μF VOUT = 1.25 (1 + R1 / R2) R2 10kΩ Copyright © 2018, Texas Instruments Incorporated Figure 16. Adjustable Voltage Shunt Reference 10 Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 REF1112 www.ti.com SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 8.2.5 Level Shift to Achieve Full ADC Input Range The REF1112 is also useful for level shifting, and as shown in Figure 17, can be used to achieve the full input range of an analog-to-digital converter (ADC). VS VREF VOUT 1.25V +V ADC 0.1μF VIN −V Figure 17. REF1112 Provides a Level Shift to Achieve Full ADC Input Range 8.2.6 Stable Current Source The REF1112 can be configured with an additional diode and NPN transistor to provide a temperature compensated current reference as shown in Figure 18. VS 10kΩ ISET ISET = 0.1 μF VREF RSET RSET Figure 18. REF1112 as a Stable Current Source Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 11 REF1112 SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 www.ti.com 9 Power Supply Recommendations While a bypass capacitor is not required on the input voltage line, TI recommends reducing noise on the input which could affect the output. A 0.1-μF ceramic capacitor or larger is recommended. 10 Layout 10.1 Layout Guidelines Place decoupling capacitors as close to the device as possible. Use appropriate widths for traces when shunting high currents to avoid excessive voltage drops. 10.2 Layout Example RBIAS VREF 1 REF1112 CLOAD CIN GND 3 NC 3 Figure 19. Layout Example 12 Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 REF1112 www.ti.com SBOS283D – SEPTEMBER 2003 – REVISED MARCH 2018 11 Device and Documentation Support 11.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 11.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2003–2018, Texas Instruments Incorporated Product Folder Links: REF1112 13 PACKAGE OPTION ADDENDUM www.ti.com 13-Aug-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) REF1112AIDBZR ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 R11A REF1112AIDBZRG4 ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 R11A REF1112AIDBZT ACTIVE SOT-23 DBZ 3 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 R11A REF1112AIDBZTG4 ACTIVE SOT-23 DBZ 3 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 R11A (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of