SDFS093 − NOVEMBER 1992 − REVISED DECEMBER 1993
•
•
•
DW PACKAGE
(TOP VIEW)
Designed to Reduce Reflection Noise
Repetitive Peak Forward
Current . . . 300 mA
16-Bit Array Structure Suited for
Bus-Oriented Systems
GND
A1
A2
A3
A4
A5
A6
A7
A8
GND
description
This bus-termination array is designed to reduce
reflection noise and minimize ringing on
high-performance bus lines. The SN74F1016
features a 16-bit R-C network and Schottky barrier
diode array. These Schottky diodes provide
clamp-to-ground functionality and serve to
minimize overshoot and undershoot of
high-speed switching buses.
1
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
GND
A16
A15
A14
A13
A12
A11
A10
A9
GND
The SN74F1016 is characterized for operation
from 0°C to 70°C.
schematic diagram
GND
A16
A15
A14
A13
A12
A11
A10
A9
GND
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
GND
A1
A2
A4
A5
A7
A8
Resistor =
Capacitor =
Diode
=
A3
A6
GND
50 Ω ± 10%
47 pF ± 10%, VR = 2.5 V, f = 1 MHz
Schottky
Copyright 1993, Texas Instruments Incorporated
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• DALLAS, TEXAS 75265
• HOUSTON, TEXAS 77251−1443
POST OFFICE BOX 655303
POST OFFICE BOX 1443
2−1
SDFS093 − NOVEMBER 1992 − REVISED DECEMBER 1993
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Steady-state reverse voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Continuous forward current, IF: Any D terminal from GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Total through all GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 mA
Repetitive peak forward current, IFRM‡: Any D terminal from GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
Total through all GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 A
Continuous total power dissipation at (or below) 25°C free-air temperature . . . . . . . . . . . . . . . . . . . . 500 mW
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡ These values apply for tw ≤ 100 µs, duty cycle ≤ 20%.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
single-diode operation (see Note 1)
MIN
TYP†
PARAMETER
TEST CONDITIONS
IR
VFM
Static reverse current
Peak forward voltage
VR = 7 V
IF = 200 mA
MAX
Total capacitance
VR = 0
VR = 2 V
80
Ct
VR = 3 V
55
2
1.25
UNIT
µA
V
60
pF
† All typical values are at TA = 25°C.
NOTE 1: Test conditions and limits apply separately to each of the diodes. The diodes not under test are open-circuited during the measurement
of these characteristics.
multiple-diode operation
PARAMETER
TEST CONDITIONS
TYP†
MAX
10
50
MIN TYP†
MAX
8
10
MIN TYP†
MAX
0.7
0.8
MIN
Ix
Internal crosstalk current
Total GND current = 1.2 A,
See Note 2
NOTE 2: Ix is measured under the following conditions with one diode static, all others switching:
Switching diodes: tw = 100 µs, duty cycle = 20%;
Static diode: VR = 5 V; the static diode input current is the internal crosstalk current Ix.
UNIT
µA
switching characteristics, TA = 25°C
PARAMETER
trr
Reverse recovery time
TEST CONDITIONS
IF = 10 mA,
IRM(REC) = 10 mA,
IR(REC) = 1 mA,
RL = 100 Ω
UNIT
ns
undershoot characteristics
PARAMETER
VUS
2−2
Undershoot voltage
TEST CONDITIONS
tf = 2 ns, tw = 50 ns, VIH = 5 V, VIL = 0, ZS = 25 Ω, ZO = 50 Ω,
L = 36-inch coaxial cable
•
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
•
UNIT
V
SDFS093 − NOVEMBER 1992 − REVISED DECEMBER 1993
APPLICATION INFORMATION
Large negative transients occurring at the inputs of memory devices (DRAMs, SRAMs, EPROMs, etc.) or on the
CLOCK lines of many clocked devices can result in improper operation of the devices. The SN74F1016 diode
termination array helps suppress negative transients caused by transmission line reflections, crosstalk, and switching
noise.
Diode terminations have several advantages when compared to resistor termination schemes. Split resistor or
Thevenin equivalent termination can cause a substantial increase in power consumption. The use of a single resistor
to ground to terminate a line usually results in degradation of the output high level, resulting in reduced noise immunity.
Series damping resistors placed on the outputs of the driver will reduce negative transients, but they can also increase
propagation delays down the line, as a series resistor reduces the output drive capability of the driving device. Diode
terminations have none of these drawbacks.
The operation of the diode arrays in reducing negative transients is explained in Figure 1. The diode conducts current
whenever the voltage reaches a negative value large enough for the diode to turn on. Suppression of negative
transients is tracked by the current-voltage characteristic curve for that diode. A typical current voltage for the
SN74F1016 is shown in Figure 1.
The maximum effectiveness of the diode arrays in suppressing negative transients occurs when they are placed at
the end of a line and/or the end of a long stub branching off a main transmission line. The diodes can also be used
to reduce the negative transients that occur due to discontinuities in the middle of a line. An example of this is a slot
in a backplane that is provided for an add-on card.
DIODE FORWARD CURRENT
vs
DIODE FORWARD VOLTAGE
−100
Variable 1:
VIN
−Ch1
Linear Sweep:
Start
0.000 V
Stop
−2.000 V
Step
− 0.010 V
TA = 25°C
−90
I I − Forward Current − mA
−80
−70
Constants:
VHI −Vs1
VLO −Vs2
−60
3.5000 V
0.0000 V
−50
−40
−30
−20
−10
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VF − Forward Voltage − V
Figure 1
•
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
•
2−3
SDFS093 − NOVEMBER 1992 − REVISED DECEMBER 1993
ZO = 50 Ω
Length = 36 in
S1
ZS = 25Ω
(a) UNDERSHOOT TEST SETUP
218.500 ns
243.500 ns
268.500 ns
S1 Open
S1 Closed
Vmarker 1
Vmarker 2
−2.0 V
Ch. 1
Timebase
Vmarker 1
Vmarker 2
=
=
=
=
1.00 V/div
5.00 ns/div
0.00 V
−640.00 mV
Offset
Delay
Delta V
(b) SCOPE DISPLAY
Figure 2. Undershoot Test Setup and Scope Display
2−4
•
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
•
= − 20.00 mV
= 243.5 ns
= −640.00 mV
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
SN74F1016DW
ACTIVE
SOIC
DW
20
25
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
F1016
SN74F1016DWR
ACTIVE
SOIC
DW
20
2000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
0 to 70
F1016
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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