SN74LVC1G386
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SCES439E – APRIL 2003 – REVISED DECEMBER 2013
Single 3-Input Positive-XOR Gate
Check for Samples: SN74LVC1G386
FEATURES
DESCRIPTION
•
The SN74LVC1G386 device performs the Boolean
function Y = A × B × C in positive logic.
1
2
•
•
•
•
•
•
Available in the Texas Instruments
NanoStar ™ and NanoFree™
Packages
Supports 5-V VCC Operation
Inputs Accept Voltages to 5.5 V
Supports Down Translation to VCC
Ioff Supports Live Insertion, Partial-PowerDown Mode, Back-Drive Protection
Latch-Up Performance Exceeds 100 mA
Per JESD 78, Class II
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)
NanoStar™ and NanoFree™ package technology is
a major breakthrough in IC packaging concepts,
using the die as the package.
This device is fully specified for partial-power-down
applications using Ioff. The Ioff circuitry disables the
outputs, preventing damaging current backflow
through the device when it is powered down.
DBV PACKAGE
(TOP VIEW)
A
1
6
YZP PACKAGE
(BOTTOM VIEW)
DCK PACKAGE
(TOP VIEW)
A
C
GND
2
5
VCC
B
3
4
Y
1
1
C
GND
2
5
VCC
B
3
4
Y
DRY PACKAGE
(TOP VIEW)
A
6
6
C
GND
2
5
VCC
B
3
4
Y
B
GND
34
A
16
25
Y
VCC
C
DSF PACKAGE
(TOP VIEW)
A
GND
B
1
6
2
5
3
4
C
VCC
Y
See mechanical drawings for dimensions.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoStar, NanoFree are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2003–2013, Texas Instruments Incorporated
SN74LVC1G386
SCES439E – APRIL 2003 – REVISED DECEMBER 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Function Table
INPUTS
OUTPUT
Y
A
B
C
L
L
L
L
L
L
H
H
L
H
L
H
L
H
H
L
H
L
L
H
H
L
H
L
H
H
L
L
H
H
H
H
Logic Diagram (Positive Logic)
A
B
C
Y
Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VCC
Supply voltage range
–0.5
6.5
V
VI
Input voltage range (2)
–0.5
6.5
V
VO
Voltage range applied to any output in the high-impedance or power-off state (2)
–0.5
6.5
V
–0.5
VCC + 0.5
(2) (3)
UNIT
VO
Voltage range applied to any output in the high or low state
IIK
Input clamp current
VI < 0
–50
mA
IOK
Output clamp current
VO < 0
–50
mA
IO
Continuous output current
±50
mA
±100
mA
Continuous current through VCC or GND
θJA
Tstg
(1)
(2)
(3)
(4)
2
Package thermal impedance (4)
DBV package
165
DCK package
259
YEP or YZP package
123
Storage temperature range
–65
150
V
°C/W
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
The value of VCC is provided in the recommended operating conditions table.
The package thermal impedance is calculated in accordance with JESD 51-7.
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SN74LVC1G386
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SCES439E – APRIL 2003 – REVISED DECEMBER 2013
Recommended Operating Conditions (1)
VCC
Supply voltage
Operating
Data retention only
High-level input voltage
MAX
5.5
1.5
VCC = 1.65 V to 1.95 V
VIH
MIN
1.65
UNIT
V
0.65 × VCC
VCC = 2.3 V to 2.7 V
1.7
VCC = 3 V to 3.6 V
V
2
VCC = 4.5 V to 5.5 V
0.7 × VCC
VCC = 1.65 V to 1.95 V
0.35 × VCC
VCC = 2.3 V to 2.7 V
0.7
VCC = 3 V to 3.6 V
0.8
VIL
Low-level input voltage
VI
Input voltage
0
5.5
V
VO
Output voltage
0
VCC
V
VCC = 4.5 V to 5.5 V
0.3 × VCC
VCC = 1.65 V
–4
VCC = 2.3 V
IOH
High-level output current
–8
–16
VCC = 3 V
Low-level output current
Δt/Δv
Input transition rise or fall rate
–32
VCC = 1.65 V
4
VCC = 2.3 V
8
16
VCC = 3 V
VCC = 4.5 V
32
VCC = 1.8 V ± 0.15 V, 2.5 V ± 0.2 V
20
VCC = 3.3 V ± 0.3 V
10
(1)
Operating free-air temperature
mA
24
VCC = 5 V ± 0.5 V
TA
mA
–24
VCC = 4.5 V
IOL
V
ns/V
5
–40
125
°C
All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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SN74LVC1G386
SCES439E – APRIL 2003 – REVISED DECEMBER 2013
www.ti.com
Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
1.65 V to
5.5 V
IOH = –100 µA
VOH
1.2
1.9
1.9
2.4
2.4
2.3
2.3
3.8
3.8
3V
TYP (1)
MAX
4.5 V
IOL = 100 µA
1.65 V to
5.5 V
0.1
0.1
IOL = 4 mA
1.65 V
0.45
0.45
IOL = 8 mA
2.3 V
0.3
0.3
0.4
0.4
0.55
0.55
0.55
0.55
3V
4.5 V
VI = 5.5 V or GND
VI or VO = 5.5 V
VI = 5.5 V or GND, IO = 0
ΔICC
One input at VCC – 0.6 V,
Other inputs at VCC or GND
Ci
VI = VCC or GND
UNIT
V
IOH = –32 mA
ICC
4
VCC – 0.1
1.2
IOL = 32 mA
(1)
VCC – 0.1
2.3 V
IOL = 24 mA
Ioff
MIN
1.65 V
IOL = 16 mA
All inputs
–40°C to 125°C
MAX
IOH = –8 mA
IOH = –24 mA
II
TYP (1)
IOH = –4 mA
IOH = –16 mA
VOL
–40°C to 85°C
MIN
V
0 to 5.5 V
±5
±5
µA
0
±10
±10
µA
1.65 V to
5.5 V
10
10
µA
3 V to 5.5 V
500
500
µA
3.3 V
3.5
pF
All typical values are at VCC = 3.3 V, TA = 25°C.
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SN74LVC1G386
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SCES439E – APRIL 2003 – REVISED DECEMBER 2013
Switching Characteristics
over recommended operating free-air temperature range, CL = 15 pF (unless otherwise noted) (see Figure 1)
–40°C to 85°C
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
tpd
A, B, or C
Y
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
3
9.4
1.3
5
0.8
4.5
0.5
3.5
ns
Switching Characteristics
over recommended operating free-air temperature range, CL = 30 pF or 50 pF (unless otherwise noted) (see Figure 2)
–40°C to 85°C
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
tpd
A, B, or C
Y
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
3.5
12
1.8
5.5
1.3
5
1
4
ns
Switching Characteristics
over recommended operating free-air temperature range, CL = 30 pF or 50 pF (unless otherwise noted) (see Figure 2)
–40°C to 125°C
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
tpd
A, B, or C
Y
VCC = 1.8 V
± 0.15 V
VCC = 2.5 V
± 0.2 V
VCC = 3.3 V
± 0.3 V
VCC = 5 V
± 0.5 V
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
3.5
14.8
1.8
7.2
1.3
6.4
1
5.1
UNIT
ns
Operating Characteristics
TA = 25°C
PARAMETER
Cpd
TEST CONDITIONS
Power dissipation capacitance
f = 10 MHz
VCC = 1.8 V
VCC = 2.5 V
VCC = 3.3 V
VCC = 5 V
TYP
TYP
TYP
TYP
17.5
18
19
22
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UNIT
pF
5
SN74LVC1G386
SCES439E – APRIL 2003 – REVISED DECEMBER 2013
www.ti.com
Parameter Measurement Information
VLOAD
S1
RL
From Output
Under Test
Open
GND
CL
(see Note A)
RL
TEST
S1
tPZL (see Notes E and F)
tPLZ (see Notes E and G)
tPHZ/tPZH
VLOAD
VLOAD
VLOAD
LOAD CIRCUIT
INPUTS
VCC
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5 V ± 0.5 V
VI
tr/tf
VCC
VCC
3V
VCC
≤2 ns
≤2 ns
≤2.5 ns
≤2.5 ns
VM
VLOAD
CL
RL
V∆
VCC/2
VCC/2
1.5 V
VCC/2
2 × VCC
2 × VCC
6V
2 × VCC
15 pF
15 pF
15 pF
15 pF
1 MΩ
1 MΩ
1 MΩ
1 MΩ
0.15 V
0.15 V
0.3 V
0.3 V
VI
Timing Input
VM
0V
tW
tsu
VI
Input
VM
VM
th
VI
Data Input
VM
VM
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VI
VM
Input
VM
0V
tPLH
VOH
Output
VM
VOL
tPHL
tPLZ
VLOAD/2
VM
tPZH
VM
VM
VM
0V
Output
Waveform 1
S1 at VLOAD
(see Note B)
tPLH
VOH
Output
VM
tPZL
tPHL
VM
VI
Output
Control
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
Output
Waveform 2
S1 at GND
(see Note B)
VOL + V∆
VOL
tPHZ
VM
VOH – V∆
VOH
≈0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators have the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω.
D. The outputs are measured one at a time, with one transition per measurement.
E. Because this device has open-drain outputs, tPLZ and tPZL are the same as tPD.
F. tPZL is measured at VM.
G. tPLZ is measured at VOL + V∆.
H. All parameters and waveforms are not applicable to all devices.
Figure 1. Load Circuit and Voltage Waveforms
6
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SN74LVC1G386
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SCES439E – APRIL 2003 – REVISED DECEMBER 2013
Parameter Measurement Information
VLOAD
S1
RL
From Output
Under Test
Open
TEST
GND
CL
(see Note A)
S1
Open
VLOAD
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
RL
GND
LOAD CIRCUIT
INPUTS
VCC
1.8 V ± 0.15 V
2.5 V ± 0.2 V
3.3 V ± 0.3 V
5 V ± 0.5 V
VI
tr/tf
VCC
VCC
3V
VCC
£2 ns
£2 ns
£2.5 ns
£2.5 ns
VM
VLOAD
CL
RL
VD
VCC/2
VCC/2
1.5 V
VCC/2
2 × VCC
2 × VCC
6V
2 × VCC
30 pF
30 pF
50 pF
50 pF
1 kW
500 W
500 W
500 W
0.15 V
0.15 V
0.3 V
0.3 V
VI
Timing Input
VM
0V
tW
tsu
VI
Input
VM
VM
th
VI
Data Input
VM
VM
0V
0V
VOLTAGE WAVEFORMS
PULSE DURATION
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
VI
VM
Input
VM
0V
tPLH
VOH
Output
VM
VOL
tPHL
VM
VM
0V
tPLZ
Output
Waveform 1
S1 at VLOAD
(see Note B)
tPLH
VLOAD/2
VM
tPZH
VOH
Output
VM
tPZL
tPHL
VM
VI
Output
Control
VM
VOL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
INVERTING AND NONINVERTING OUTPUTS
Output
Waveform 2
S1 at GND
(see Note B)
VOL + VD
VOL
tPHZ
VM
VOH – VD
VOH
»0 V
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR £ 10 MHz, ZO = 50 W.
D. The outputs are measured one at a time, with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
H. All parameters and waveforms are not applicable to all devices.
Figure 2. Load Circuit and Voltage Waveforms
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SN74LVC1G386
SCES439E – APRIL 2003 – REVISED DECEMBER 2013
www.ti.com
REVISION HISTORY
Changes from Revision D (July 2006) to Revision E
Page
•
Updated document to new TI data sheet format. ................................................................................................................. 1
•
Updated Features. ................................................................................................................................................................ 1
•
Added ESD warning. ............................................................................................................................................................ 2
•
Updated operating temperature range. ................................................................................................................................. 3
8
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
74LVC1G386DCKRG4
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C8R
SN74LVC1G386DBVR
ACTIVE
SOT-23
DBV
6
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
CC6R
SN74LVC1G386DCKR
ACTIVE
SC70
DCK
6
3000
RoHS & Green
NIPDAU | SN
Level-1-260C-UNLIM
-40 to 125
(C8J, C8R)
SN74LVC1G386DRYR
ACTIVE
SON
DRY
6
5000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C8
SN74LVC1G386DSFR
ACTIVE
SON
DSF
6
5000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
C8
SN74LVC1G386YZPR
ACTIVE
DSBGA
YZP
6
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
C8N
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of