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THS4509
SLOS454I – JANUARY 2005 – REVISED JULY 2016
THS4509 Wideband, Low-Noise, Low-Distortion, Fully-Differential Amplifier
1 Features
3 Description
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The THS4509 device is a wideband, fully-differential
op amp designed for 5-V data acquisition systems. It
has a low noise at 1.9 nV/√Hz, and low harmonic
distortion of –75 dBc HD2 and –80 dBc HD3 at 100
MHz with 2 VPP, G = 10 dB, and 1-kΩ load. Slew rate
is high at 6600 V/μs, and with settling time of 2 ns to
1% (2-V step), it is ideal for pulsed applications. It is
designed for a minimum gain of 6 dB, but is
optimized for gains of 10 dB.
1
Fully-Differential Architecture
Centered Input Common-Mode Range
Output Common-Mode Control
Minimum Gain of 2 V/V (6 dB)
Bandwidth: 1900 MHz
Slew Rate: 6600 V/μs
1% Settling Time: 2 ns
HD2: –75 dBc at 100 MHz
HD3: –80 dBc at 100 MHz
OIP3: 37 dBm at 70 MHz
Input Voltage Noise: 1.9 nV/√Hz (f > 10 MHz)
Power-Supply Voltage: 3 V to 5 V
Power-Supply Current: 37.7 mA
Power-Down Current: 0.65 mA
To allow for DC coupling to analog-to-digital
converters (ADCs), its unique output common-mode
control circuit maintains the output common-mode
voltage within 3-mV offset (typical) from the set
voltage, when set within 0.5-V of midsupply, with less
than 4-mV differential offset voltage. The commonmode set point is set to midsupply by internal
circuitry, which may be overdriven from an external
source.
The input and output are optimized for best
performance with the common-mode voltages set to
midsupply. Along with high performance at low
power-supply voltage, this design makes it ideal for
high-performance, single-supply 5-V data acquisition
systems. The combined performance of the THS4509
in a gain of 10 dB driving the ADS5500 ADC,
sampling at 125 MSPS, is 81-dBc SFDR and
69.1-dBc SNR with a –1 dBFS signal at 70 MHz.
2 Applications
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5-V Data Acquisition Systems High
Linearity ADC Amplifiers
Wireless Communication
Medical Imaging
Test and Measurement
The THS4509 is offered in a quad, leadless VQFN-16
package (RGT), and is characterized for operation
over the full industrial temperature range from –40°C
to +85°C.
Device Information(1)
PART NUMBER
THS4509
PACKAGE
VQFN (16)
BODY SIZE (NOM)
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Test Configuration
Measured 3rd Order Intermodulation Spurious
Signal Level
250 W
-60
VIN
Mini-Circuits
ADT2-1T
50 W
1:1.4
+VS = 5 V
Mini-Circuits
ADT2-1T
10 nF
1:1.4
VOUT
-70
+
VCM
953 W
THS4509
-
-90
10 nF
50 W
0.1 mF
-80
-100
VOUT
VIN
-110
250 W
= 20 dB
Copyright © 2016, Texas Instruments Incorporated
-120
0
50
100
150
200
f - Frequency - MHz
250
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
THS4509
SLOS454I – JANUARY 2005 – REVISED JULY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
8
1
1
1
2
4
4
5
Absolute Maximum Ratings ..................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 5
Electrical Characteristics: VS+ – VS– = 5 V ............... 6
Electrical Characteristics: VS+ – VS– = 3 V ............... 8
Dissipation Ratings ................................................... 9
Typical Characteristics ............................................ 10
Detailed Description ............................................ 25
8.1 Overview ................................................................. 25
8.2 Functional Block Diagram ....................................... 25
8.3 Feature Description................................................. 25
8.4 Device Functional Modes........................................ 28
9
Application and Implementation ........................ 29
9.1 Application Information............................................ 29
9.2 Typical Applications ................................................ 29
10 Power Supply Recommendations ..................... 35
11 Layout................................................................... 36
11.1 Layout Guidelines ................................................. 36
11.2 Layout Example .................................................... 37
11.3 PowerPAD™ Design Considerations.................... 38
12 Device and Documentation Support ................. 40
12.1
12.2
12.3
12.4
12.5
12.6
12.7
Device Support......................................................
Documentation Support ........................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
40
40
40
40
40
40
40
13 Mechanical, Packaging, and Orderable
Information ........................................................... 40
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision H (November 2009) to Revision I
Page
•
Added ESD Ratings table, Thermal Information table, Feature Description section, Device Functional Modes,
Application and Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section....................................... 1
•
Deleted the Packaging/Ordering Information table, see POA at the end of the data sheet .................................................. 1
•
Deleted the THS4509 EVM section to the Layout Example section ................................................................................... 37
Changes from Revision G (May 2008) to Revision H
Page
•
Changed title of Typical Characteristics: VS+ – VS– = 5 V .................................................................................................... 10
•
Deleted conditions from Typical Characteristics: VS+ – VS– = 5 V table of graphs............................................................... 10
•
Changed title of Typical Characteristics: VS+ – VS– = 3 V .................................................................................................... 18
•
Deleted conditions from Typical Characteristics: VS+ – VS– = 3 V table of graphs............................................................... 18
•
Added y-axis to Figure 87..................................................................................................................................................... 33
•
Added y-axis to Figure 90..................................................................................................................................................... 35
•
Changed item 10 in Layout Recommendations section ....................................................................................................... 36
•
Added the PowerPAD PCB Layout Considerations section................................................................................................. 36
•
Moved Figure 92 and associated paragraph to PowerPAD PCB Layout Considerations section ....................................... 36
•
Added the PowerPAD Design Considerations section......................................................................................................... 38
Changes from Revision F (October 2007) to Revision G
Page
•
Updated document format ...................................................................................................................................................... 1
•
Changed common-mode range column for THS4509 and THS4513 rows in the Related Products table ............................ 4
•
Added footnote 1 to Absolute Maximum Ratings table .......................................................................................................... 5
•
Added V (volts) to unit column of ESD ratings rows in Absolute Maximum Ratings table..................................................... 5
2
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•
Changed VS+ – VS– = 5 V Input specifications from 1.75 V typ (common-mode input range high) to 1.4 V typ; –1.75
V (common-mode input range low) to –1.4 V; 1.35 MΩ || 1.77 pF (differential input impedance) to 1.3 MΩ || 1.8 pF;
1.02 MΩ || 2.26 pF (common-mode input impedance) to 1.0 MΩ || 2.3 pF ........................................................................... 6
•
Changed VS+ – VS– = 5 V Input specifications from 1.75 V typ (common-mode input range high) to 1.4 V typ; –1.75
V (common-mode input range low) to –1.4 V; 1.35 MΩ || 1.77 pF (differential input impedance) to 1.3 MΩ || 1.8 pF;
1.02 MΩ || 2.26 pF (common-mode input impedance) to 1.0 MΩ || 2.3 pF ........................................................................... 7
•
Changed VS+ – VS– = 3 V Input specifications from 0.75 V typ (common-mode input range high) to 0.4 V typ; –0.75
V (common-mode input range low) to –0.4 V; 1.35 MΩ || 1.77 pF (differential input impedance) to 1.3 MΩ || 1.8 pF;
1.02 MΩ || 2.26 pF (common-mode input impedance) to 1.0 MΩ || 2.3 pF ........................................................................... 8
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SLOS454I – JANUARY 2005 – REVISED JULY 2016
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5 Device Comparison Table
(1)
COMMON-MODE RANGE OF INPUT (1)
DEVICE
MIN. GAIN
THS4508
6 dB
–0.3 V to 2.3 V
THS4509
6 dB
1.1 V to 3.9 V
THS4511
0 dB
–0.3 V to 2.3 V
THS4513
0 dB
1.1 V to 3.9 V
Assumes a 5-V single-ended power supply
6 Pin Configuration and Functions
RGT Package
16-Pin VQFN
Top View
VS−
16
15
14
13
NC
1
12
PD
VIN−
2
11
VIN+
VOUT+
3
10
VOUT−
CM
4
9
5
6
7
CM
8
VS+
Pin Functions
PIN
NAME
NO.
NC
1
VIN–
VOUT+
TYPE
DESCRIPTION
N/A
No internal connection
2
I
Inverting amplifier input
3
O
Noninverting amplifier output
CM
4, 9
I
Common-mode voltage input
VS+
5-8
P
Positive amplifier power-supply input
VOUT–
10
O
Inverted amplifier output
VIN+
11
I
Noninverting amplifier input
PD
12
I
Power-down; PD = logic low puts part into low power mode, PD = logic high or open for
normal operation
VS–
13, 14, 15, 16
P
Negative amplifier power-supply input
4
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7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range, unless otherwise noted. (1)
MIN
VS– to VS+
Supply voltage
VI
Input voltage
VID
Differential input voltage
IO
Output current (2)
MAX
UNIT
6
V
±VS
Continuous power dissipation
4
V
200
mA
See Dissipation Ratings
TJ
Maximum junction temperature
150
°C
TA
Operating free-air temperature
–40
85
°C
Tstg
Storage temperature
–65
150
°C
(1)
(2)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
The THS4509 incorporates a (QFN) exposed thermal pad on the underside of the chip. This pad acts as a heatsink and must be
connected to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about
using the QFN thermally-enhanced package.
7.2 ESD Ratings
VALUE
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
V(ESD)
(1)
(2)
Electrostatic
discharge
(1)
UNIT
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
±1500
Machine model
±100
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
Supply voltage
Ambient temperature
NOM
MAX
UNIT
3
5
5.25
V
–40
25
85
°C
7.4 Thermal Information
THS4509
THERMAL METRIC (1)
RGT (VQFN)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
49.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
66.9
°C/W
RθJB
Junction-to-board thermal resistance
23.7
°C/W
ψJT
Junction-to-top characterization parameter
1.7
°C/W
ψJB
Junction-to-board characterization parameter
23.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
7.1
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.5 Electrical Characteristics: VS+ – VS– = 5 V
Test conditions are at VS+ = +2.5 V, VS– = –2.5 V, G = 10 dB, CM = open, VO = 2 VPP, RF = 349 Ω, RL = 200-Ω differential,
TA = +25°C, single-ended input, differential output, and input and output referenced to midsupply, unless otherwise noted.
PARAMETER
TEST CONDITIONS
TEST
LEVEL (1)
MIN
TYP
MAX
UNIT
AC PERFORMANCE
G = 6 dB, VO = 100 mVPP
Small-signal bandwidth
2
GHz
G = 10 dB, VO = 100 mVPP
1.9
GHz
G = 14 dB, VO = 100 mVPP
600
MHz
G = 20 dB, VO = 100 mVPP
275
MHz
Gain-bandwidth product
G = 20 dB
Bandwidth for 0.1-dB flatness
G = 10 dB, VO = 2 VPP
Large-signal bandwidth
G = 10 dB, VO = 2 VPP
Slew rate (differential)
Rise time
3
GHz
300
MHz
1.5
GHz
6600
V/μs
0.5
Fall time
2-V step
0.5
Settling time to 1%
Settling time to 0.1%
2nd-order harmonic distortion
10
f = 10 MHz
–104
f = 50 MHz
–80
f = 100 MHz
C
–92
f = 100 MHz
–81
200-kHz tone spacing,
RL = 499 Ω
3rd-order intermodulation distortion
3rd-order output intercept point
–108
f = 50 MHz
2nd-order intermodulation distortion
2nd-order output intercept point
dBc
–68
f = 10 MHz
3rd-order harmonic distortion
ns
2
200-kHz tone spacing
RL = 100 Ω, referenced
to 50-Ω output
fC = 70 MHz
–78
fC = 140 MHz
–64
fC = 70 MHz
–95
fC = 140 MHz
–78
fC = 70 MHz
78
fC = 140 MHz
58
fC = 70 MHz
43
fC = 140 MHz
dBc
dBc
dBm
38
fC = 70 MHz
12.2
fC = 140 MHz
10.8
Noise figure
50-Ω system, 10 MHz
17.1
dB
Input voltage noise
f > 10 MHz
1.9
nV/√Hz
Input current noise
f > 10 MHz
2.2
pA/√Hz
1-dB compression point
dBm
DC PERFORMANCE
Open-loop voltage gain (AOL)
Input offset voltage
Average offset voltage drift
Input bias current
Average bias current drift
Input offset current
Average offset current drift
(1)
6
C
TA = +25°C
TA = –40°C to +85°C
TA = –40°C to +85°C
TA = +25°C
TA = –40°C to +85°C
TA = –40°C to +85°C
TA = +25°C
TA = –40°C to +85°C
TA = –40°C to +85°C
A
B
A
B
A
B
68
dB
1
4
1
5
2.6
mV
μV/°C
8
15.5
8
18.5
20
μA
nA/°C
1.6
3.6
1.6
7
4
mV
μA
nA/°C
Test levels: (A) 100% tested at +25°C. Over-temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value only for information.
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Electrical Characteristics: VS+ – VS– = 5 V (continued)
Test conditions are at VS+ = +2.5 V, VS– = –2.5 V, G = 10 dB, CM = open, VO = 2 VPP, RF = 349 Ω, RL = 200-Ω differential,
TA = +25°C, single-ended input, differential output, and input and output referenced to midsupply, unless otherwise noted.
PARAMETER
TEST CONDITIONS
TEST
LEVEL (1)
MIN
TYP
MAX
UNIT
INPUT
Common-mode input range high
1.4
Common-mode input range low
V
B
–1.4
Differential input impedance
C
1.3 || 1.8
MΩ || pF
Common-mode input impedance
C
1.0 || 2.3
MΩ || pF
Common-mode rejection ratio
90
dB
OUTPUT
Maximum output voltage high
Each output with 100 Ω
to midsupply
Minimum output voltage low
Differential output voltage swing
TA = +25°C
1.2
1.4
TA = –40°C to +85°C
1.1
1.4
TA = +25°C
A
TA = –40°C to +85°C
4.8
TA = –40°C to +85°C
Differential output current drive
RL = 10 Ω
Output balance error
VO = 100 mV, f = 1 MHz
Closed-loop output impedance
f = 1 MHz
V
–1.4
–1.2
–1.4
–1.1
V
5.6
V
4.4
96
mA
–49
dB
0.3
Ω
Small-signal bandwidth
700
MHz
Slew rate
110
V/μs
1
V/V
5
mV
±40
μA
C
OUTPUT COMMON-MODE VOLTAGE CONTROL
Gain
Output common-mode offset
from CM input
CM input bias current
1.25 V < CM < 3.5 V
1.25 V < CM < 3.5 V
C
CM input voltage high
1.5
CM input voltage low
–1.5
CM input impedance
23 || 1
CM default voltage
V
kΩ || pF
0
V
POWER SUPPLY
Specified operating voltage
Maximum quiescent current
Minimum quiescent current
C
3
TA = +25°C
TA = –40°C to +85°C
TA = +25°C
A
TA = –40°C to +85°C
Power-supply rejection (±PSRR)
C
5
5.25
37.7
40.9
37.7
41.9
34.5
37.7
33.5
37.7
V
mA
mA
90
dB
> 2.1 +
VS–
V
< 0.7 +
VS–
V
POWER-DOWN - Referenced to VS–
Enable voltage threshold
Assured on above 2.1 V + VS–
C
Disable voltage threshold
Power-down quiescent current
Input bias current
Assured off below 0.7 V + VS–
TA = +25°C
TA = –40°C to +85°C
A
PD = VS–
0.65
0.9
0.65
1
mA
100
Input impedance
Turnon time delay
Measured to output on
Turnoff time delay
Measured to output off
C
50 || 2
μA
kΩ || pF
55
ns
10
μs
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7.6 Electrical Characteristics: VS+ – VS– = 3 V
Test conditions at VS+ = +1.5 V, VS– = –1.5 V, G = 10 dB, CM = open, VO = 1 VPP, RF = 349 Ω, RL = 200-Ω differential,
TA = +25°C, single-ended input, differential output, and input and output referenced to midsupply, unless otherwise noted.
PARAMETER
TEST CONDITIONS
TEST
LEVEL (1)
MIN
TYP
MAX
UNIT
AC PERFORMANCE
Small-signal bandwidth
G = 6 dB, VO = 100 mVPP
1.9
G = 10 dB, VO = 100 mVPP
1.6
GHz
G = 14 dB, VO = 100 mVPP
625
MHz
G = 20 dB, VO = 100 mVPP
260
MHz
Gain-bandwidth product
G = 20 dB
Bandwidth for 0.1-dB flatness
G = 10 dB, VO = 1 VPP
Large-signal bandwidth
G = 10 dB, VO = 1 VPP
GHz
3
GHz
400
MHz
1.5
GHz
Slew rate (differential)
3500
V/μs
Rise time
0.25
Fall time
2-V step
0.25
Settling time to 1%
1
Settling time to 0.1%
2nd-order harmonic distortion
10
f = 10 MHz
–107
f = 50 MHz
–83
f = 100 MHz
dBc
–60
f = 10 MHz
3rd-order harmonic distortion
ns
C
–87
f = 50 MHz
–65
f = 100 MHz
–54
2nd-order intermodulation distortion
200-kHz tone spacing,
RL = 499 Ω
3rd-order intermodulation distortion
2nd-order output intercept point
200-kHz tone spacing
RL = 100 Ω
3rd-order output intercept point
fC = 70 MHz
–77
fC = 140 MHz
–54
fC = 70 MHz
–77
fC = 140 MHz
–62
fC = 70 MHz
72
fC = 140 MHz
52
fC = 70 MHz
38.5
fC = 140 MHz
dBc
dBc
dBm
30
fC = 70 MHz
2.2
fC = 140 MHz
0.25
Noise figure
50 Ω system, 10 MHz
17.1
dB
Input voltage noise
f > 10 MHz
1.9
nV/√Hz
Input current noise
f > 10 MHz
2.2
pA/√Hz
1-dB compression point
dBm
DC PERFORMANCE
Open-loop voltage gain (AOL)
Input offset voltage
Average offset voltage drift
Input bias current
Average bias current drift
Input offset current
Average offset current drift
(1)
8
TA = +25°C
TA = –40°C to +85°C
TA = +25°C
68
dB
1
mV
2.6
C
μV/°C
6
μA
TA = –40°C to +85°C
20
nA/°C
TA = +25°C
1.6
TA = –40°C to +85°C
4
μA
nA/°C
Test levels: (A) 100% tested at +25°C. Over-temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value only for information.
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Electrical Characteristics: VS+ – VS– = 3 V (continued)
Test conditions at VS+ = +1.5 V, VS– = –1.5 V, G = 10 dB, CM = open, VO = 1 VPP, RF = 349 Ω, RL = 200-Ω differential,
TA = +25°C, single-ended input, differential output, and input and output referenced to midsupply, unless otherwise noted.
PARAMETER
TEST CONDITIONS
TEST
LEVEL (1)
MIN
TYP
MAX
UNIT
INPUT
Common-mode input range high
0.4
Common-mode input range low
V
B
–0.4
Differential input impedance
C
1.3 || 1.8
MΩ || pF
Common-mode input impedance
C
1.0 || 2.3
MΩ || pF
Common-mode rejection ratio
80
dB
OUTPUT
Maximum output voltage high
Minimum output voltage low
Each output with 100 Ω
to midsupply
TA = +25°C
0.45
V
TA = +25°C
–0.45
V
Differential output voltage swing
C
1.8
V
50
mA
Differential output current drive
RL = 10 Ω
Output balance error
VO = 100 mV, f = 1 MHz
–49
dB
Closed-loop output impedance
f = 1 MHz
0.3
Ω
570
MHz
60
V/μs
1
V/V
4
mV
±40
μA
OUTPUT COMMON-MODE VOLTAGE CONTROL
Small-signal bandwidth
Slew rate
Gain
Output common-mode offset
from CM input
CM input bias current
1.25 V < CM < 3.5 V
C
1.25 V < CM < 3.5 V
CM input voltage high
1.5
CM input voltage low
–1.5
CM input impedance
20 || 1
CM default voltage
V
kΩ || pF
0
V
POWER SUPPLY
Specified operating voltage
Quiescent current
TA = +25°C
Power-supply rejection (±PSRR)
C
3
A
34.8
mA
V
C
70
dB
V
POWER-DOWN Referenced to VS–
Enable voltage threshold
Assured on above 2.1 V + VS–
> 2.1 +
VS–
Disable voltage threshold
Assured off below 0.7 V + VS–
< 0.7 + VS-
Power-down quiescent current
Input bias current
V
0.46
C
PD = VS–
mA
65
Input impedance
μA
50 || 2
kΩ || pF
Turnon time delay
Measured to output on
100
ns
Turnoff time delay
Measured to output off
10
μs
7.7 Dissipation Ratings
POWER RATING
PACKAGE
θJC
θJA
TA ≤ +25°C
TA = +85°C
RGT (16)
2.4°C/W
39.5°C/W
2.3 W
225 mW
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7.8 Typical Characteristics
7.8.1 Typical Characteristics: VS+ – VS– = 5 V
Test conditions at VS+ = +2.5 V, VS– = –2.5V, CM = open, VO = 2 VPP, RF = 349 Ω, RL = 200-Ω differential, G = 10 dB, singleended input, and input and output referenced to midrail, unless otherwise noted.
Table 1. Table of Graphs
FIGURE
Small-Signal Frequency Response
Figure 1
Large-Signal Frequency Response
Harmonic
Distortion
Intermodulation
Distortion
Output Intercept Point
Figure 2
HD2, G = 6 dB, VOD = 2 VPP
vs Frequency
Figure 3
HD3, G = 6 dB, VOD = 2 VPP
vs Frequency
Figure 4
HD2, G = 10 dB, VOD = 2 VPP
vs Frequency
Figure 5
HD3, G = 10 dB, VOD = 2 VPP
vs Frequency
Figure 6
HD2, G = 14 dB, VOD = 2 VPP
vs Frequency
Figure 7
HD3, G = 14 dB, VOD = 2 VPP
vs Frequency
Figure 8
HD2, G = 10 dB
vs Output Voltage
Figure 9
HD3, G = 10 dB
vs Output Voltage
Figure 10
HD2, G = 10 dB
vs Common-Mode Input Voltage
Figure 11
HD3, G = 10 dB
vs Common-Mode Input Voltage
Figure 12
IMD2, G = 6 dB, VOD = 2 VPP
vs Frequency
Figure 13
IMD3, G = 6 dB, VOD = 2 VPP
vs Frequency
Figure 14
IMD2, G = 10 dB, VOD = 2 VPP
vs Frequency
Figure 15
IMD3, G = 10 dB, VOD = 2 VPP
vs Frequency
Figure 16
IMD2, G = 14 dB, VOD = 2 VPP
vs Frequency
Figure 17
IMD3, G = 14 dB, VOD = 2 VPP
vs Frequency
Figure 18
OIP2
vs Frequency
Figure 19
OIP3
vs Frequency
Figure 20
0.1-dB Flatness
Figure 21
S-Parameters
vs Frequency
Figure 22
Transition Rate
vs Output Voltage
Figure 23
Transient Response
Figure 24
Settling Time
Figure 25
Rejection Ratio
vs Frequency
Figure 26
Output Impedance
vs Frequency
Figure 27
Overdrive Recovery
Output Voltage Swing
Figure 28
vs Load Resistance
Figure 29
Turnoff Time
Figure 30
Turnon Time
Figure 31
Input Offset Voltage
vs Input Common-Mode Voltage
Figure 32
Open-Loop Gain
vs Frequency
Figure 33
Input-Referred Noise
vs Frequency
Figure 34
Noise Figure
vs Frequency
Figure 35
Quiescent Current
vs Supply Voltage
Figure 36
Power-Supply Current
vs Supply Voltage in Power-Down Mode
Figure 37
Output Balance Error
vs Frequency
Figure 38
CM Input Impedance
vs Frequency
Figure 39
CM Small-Signal Frequency Response
Figure 40
CM Input Bias Current
vs CM Input Voltage
Figure 41
Differential Output Offset Voltage
vs CM Input Voltage
Figure 42
10
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Typical Characteristics: VS+ – VS– = 5 V (continued)
Table 1. Table of Graphs (continued)
FIGURE
Output Common-Mode Offset
vs CM Input Voltage
22
22
Large Signal Gain − dB
16
G = 14 dB
14
12
G = 10 dB
10
8
G = 6 dB
6
18
16
G = 14 dB
14
12
G = 10 dB
10
8
G = 6 dB
6
4
4
2
2
0
0
0.1
0.1
1
10
100
1000
f - Frequency - MHz
10000
Figure 1. Small-Signal Frequency Response
10
100
f − Frequency − MHz
1
1000
10000
Figure 2. Large-Signal Frequency Response
−60
−60
G = 6 dB,
VOD = 2 VPP
−70
3rd Order Harmonic Distortion − dBc
2nd Order Harmonic Distortion − dBc
VOD = 2 VPP
20
G = 20 dB
18
Small Signal Gain - dB
G = 20 dB
VOD = 100 mVPP
20
RL = 100 W
−80
−90
RL = 200 W
−100
RL = 1 kW
−110
RL = 500 W
−120
G = 6 dB,
VOD = 2 VPP
−70
−80
RL = 100 W
−90
RL = 1 kW
−100
RL = 500 W
−110
RL = 200 W
−120
10
100
f − Frequency − MHz
1
1000
1
Figure 3. HD2 vs Frequency
10
100
f − Frequency − MHz
1000
Figure 4. HD3 vs Frequency
−60
−60
G = 10 dB,
VOD = 2 VPP
−70
3rd Order Harmonic Distortion − dBc
2nd Order Harmonic Distortion − dBc
Figure 43
RL = 200 W
−80
RL = 100 W
−90
−100
RL = 1 kW
−110
RL = 500 W
−120
G = 10 dB,
VOD = 2 VPP
−70
−80
RL = 500 W
−90
RL = 1 kW
−100
RL = 100 W
−110
RL = 200 W
−120
1
10
100
f − Frequency − MHz
1000
1
Figure 5. HD2 vs Frequency
10
100
f − Frequency − MHz
1000
Figure 6. HD3 vs Frequency
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−60
G = 14 dB,
VOD = 2 VPP
−70
3rd Order Harmonic Distortion − dBc
2nd Order Harmonic Distortion − dBc
−60
RL = 100 W
−80
RL = 200 W
RL = 500 W
−90
−100
−110
RL = 1 kW
G = 14 dB,
VOD = 2 VPP
−70
−80
RL = 100 W
−90
RL = 1 kW
−100
RL = 200 W
−110
RL = 500 W
−120
−120
10
100
f − Frequency − MHz
1
1000
1
1000
10
100
f − Frequency − MHz
Figure 7. HD2 vs Frequency
Figure 8. HD3 vs Frequency
-60
-60
3nd Order Harmonic Distortion - dBc
2nd-Order Harmonic Distortion - dBc
f = 64 MHz
-70
f = 64 MHz
-80
f = 32 MHz
-90
f = 16 MHz
-100
f = 8 MHz
-110
-70
f = 32 MHz
-80
f = 8 MHz
-90
-100
-110
f = 16 MHz
-120
-120
0
1
2
VOD - VPP
4
3
0
3
4
Figure 10. HD3 vs Output Voltage
0
-20
VCM = -1 V to 1 V
VOD = 2 VPP
G = 10 dB
RL = 200 W
-20
3rd Order Harmonic Distortion − dBc
2nd Order Harmonic Distortion − dBc
2
VOD - VPP
Figure 9. HD2 vs Output Voltage
-40
150 MHz
-60
100 MHz
64 MHz
-80
32 MHz
-100
16 MHz
4 MHz
1 MHz
-120
VCM = -1 V to 1 V
VOD = 2 VPP
G = 10 dB
RL = 200 W
-30
-40
-50
-60
150 MHz
-70
100 MHz
-80
64 MHz
-90
32 MHz
-100
16 MHz
-110
1 MHz
4 MHz
-120
-1
-0.8 -0.6 -0.4 -0.2 0
0.2 0.4 0.6 0.8
VIC − Common-Mode Output Voltage − V
1
Figure 11. HD2 vs Common-Mode Output Voltage
12
1
-1
0.2 0.4 0.6
-0.8 -0.6 -0.4 -0.2 0
VIC − Common-Mode Output Voltage − V
0.8
1
Figure 12. HD3 vs Common-Mode Output Voltage
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-60
Gain = 6 dB,
VOD = 2 VPP Envelope
-40
IMD3 - Intermodulation Distortion - dBc
IMD2 - Intermodulation Distortion - dBc
-30
RL = 200 W
RL = 100 W
-50
-60
-70
RL = 500 W
-80
RL = 1 kW
-90
-100
0
50
100
150
200
Gain = 6 dB,
VOD = 2 VPP Envelope
-65
RL = 200 W
-70
RL = 1 kW
-75
-80
-85
-90
-95
RL = 500 W
-100
f - Frequency - MHz
0
Figure 13. IMD2 vs Frequency
RL = 200 W
-50
RL = 100 W
-60
-70
RL = 500 W
-80
RL = 1 kW
-90
50
100
150
f - Frequency - MHz
Gain = 10 dB,
VOD = 2 VPP Envelope
-65
RL = 100 W
-75
-80
-85
RL = 1 kW
-90
RL = 500 W
-95
200
0
50
100
F - Frequency - MHz
150
200
Figure 16. IMD3 vs Frequency
Figure 15. IMD2 vs Frequency
−30
−60
Gain = 14 dB,
VCO = 2 VPP Envelope
−40
−50
IMD 3 − Intermodulation Distortion − dBc
IMD 2− Intermodulation Distortion − dBc
200
RL = 200 W
-70
-100
-100
0
100
150
f - Frequency - MHz
-60
Gain = 10 dB,
VOD = 2 VPP Envelope
-40
50
Figure 14. IMD3 vs Frequency
IMD 3 − Intermodulation Distortion - dBc
IMD2 - Intermodulation Distortion - dBc
-30
RL = 100 W
RL = 200 W
RL = 100 W
−60
−70
RL = 500 W
−80
RL = 1 kW
−90
RL = 100 W
Gain = 14 dB
VOD = 2 VPP Envelope
−65
−70
RL = 200 W
−75
−80
−85
−90
RL = 1 kW
−95
RL = 500 W
−100
0
50
100
150
f − Frequency − MHz
200
−100
0
Figure 17. IMD2 vs Frequency
50
100
150
f − Frequency − MHz
200
Figure 18. IMD3 vs Frequency
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45
Gain = 6 dB
85
OIP − Output Intercept Point − dBm
3
OIP 2 − Output Intercept Point − dBm
90
Gain = 14 dB
80
75
70
65
Gain = 10 dB
60
55
50
45
40
0
50
100
150
f − Frequency − MHz
Gain = 6 dB
43
41
39
Gain = 10 dB
37
35
33
31
Gain = 14 dB
29
27
25
200
0
50
Figure 19. OIP2 vs Frequency
100
150
f − Frequency − MHz
200
250
Figure 20. OIP3 vs Frequency
10.2
0
S21
VOD = 2VPP
-10
S-Parameters - dB
Signal Gain − dB
10.1
10
-20
S11
-30
-40
S22
-50
9.9
-60
S12
-70
9.8
1
0.1
1
10
100
f − Frequency − MHz
1000
Figure 22. S-Parameters vs Frequency
1.5
7000
V OD − Differential Output V oltage − V
8000
Transition Rate - V/ms
100
f - Frequency - MHz
Figure 21. 0.1-dB Flatness
Rise
6000
Fall
5000
4000
3000
2000
1000
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
0.5
0
VOD = 2 Vstep
−0.5
−1
−1.5
VOD - Differential Output Voltage - VSTEP
Figure 23. Transition Rate vs Output Voltage
14
10
1000
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t − Time − 500 ps/div
Figure 24. Transient Response
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5
100
VOD = 2 Vstep
90
PSRR−
3
80
Rejection Ratio −dB
1
0
−1
60
40
30
−3
20
−4
10
0
0.01
−5
t − Time − 500 ps/div
1
10
f − Frequency − MHz
Figure 25. Settling Time
Figure 26. Rejection Ratio vs Frequency
0.1
100
5
V OD− Differential Output Voltage − V
100
Z o − Output Impedance − Ω
CMRR
50
−2
10
1
0.1
0.1
1
10
100
f − Frequency− MHz
0.8
3
2
Input
0.4
1
0.2
0
0
−1
−0.2
−2
−0.4
−3
−0.6
−4
−0.8
−1
t − Time − 200 ns/div
Figure 28. Overdrive Recovery
2
VOD − Differential Ouput Voltage − V
7
6
5
4
3
2
1
5
1.6
Output
1.2
0.8
100
1000
4
3
PD
2
0.4
1
0
0
0
10
0.6
Output
−5
1000
1000
1
4
Figure 27. Output Impedance vs Frequency
VOD - Differential Output Voltage - V
PSRR+
70
Input V oltage − V
2
RL - Load Resistance - W
Power Down Input − V
Percent of Final Value − %
4
t − Time − 2 ms/div
Figure 29. Output Voltage Swing vs Load Resistance
Figure 30. Turnoff Time
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5
1.6
4
PD
1.2
3
0.8
2
Output
0.4
1
0
0
40
V IO − Input Offset V oltage − mV
2
Power Down Input − V
VOD − Differential Output V oltage − V
SLOS454I – JANUARY 2005 – REVISED JULY 2016
30
25
20
15
10
5
0
−5
−2.5 −2 −1.5 −1 −0.5
0 0.5
1
1.5
Input Common-Mode Voltage − V
t − Time − 50 ns/div
Figure 31. Turnon Time
10
-20
Gain
-50
Phase
-80
40
-110
30
-140
20
-170
10
-200
I n − Current Noise − pA/ Hz
80
50
100
In
10
Vn
-230
0
100
1
10 k
1M
100 M
1
10 G
10
100
f − Frequency − Hz
1k
10 k
100 k
f − Frequency − Hz
1M
10 M
Figure 34. Input-Referred Noise vs Frequency
Figure 33. Open-Loop Gain and Phase vs Frequency
20
40
19 Gain = 6 dB
18
TA = 25°C
50 - W System
I Q − Quiescent Current − mA
NF − Noise Figure − dB
2.5
1000
Vn − Voltage Noise − nV/ Hz
40
Open Loop Phase − degrees
90
60
2
Figure 32. Input Offset Voltage vs Input Common-Mode
Voltage
70
Open Loop Gain − dB
35
17
Gain = 10 dB
16
15
Gain = 14 dB
14
13
Gain = 20 dB
12
TA = -40°C
35
±1.35 V
TA = 85°C
30
11
25
10
0
50
100
150
f − Frequency − MHz
200
Figure 35. Noise Figure vs Frequency
16
1
1.5
2
VS - Supply Voltage - V
2.5
Figure 36. Quiescent Current vs Supply Voltage
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800
10
TA = 85°C
0
Output Balance Error − dB
Power Supply Current − µ A
700
TA = 25°C
600
500
400
TA = −40°C
300
200
−10
−20
−30
−40
−50
100
0
0
0.5
1
1.5
VS − Supply Voltage − V
2
−60
0.1
2.5
1000
10
100
f − Frequency − MHz
1
Figure 38. Output Balance Error vs Frequency
Figure 37. Power-Supply Current vs Supply Voltage in
Power-Down Mode
100
1
100 mVPP
0
CM Input Impedance − k Ω
-1
10
CM Gain − dB
-2
1
-3
-4
-5
-6
-7
0.1
-8
-9
0.01
0.1
1
10
100
f − Frequency − MHz
-10
0.1
1000
100
1000
Figure 40. CM Small-Signal Frequency Response
5
Differential Output Offset Voltage − mV
300
CM Input Bias Current − µ A
10
f − Frequency − MHz
Figure 39. CM Input Impedance vs Frequency
200
100
0
−100
−200
−300
−2.5
1
−2 −1.5 −1
−0.5 0
0.5 1
CM Input Voltage − V
1.5
2
2.5
4
3
2
1
0
−1
−2.5
−2
−1.5
−1
−0.5
0
0.5
1
1.5
2
2.5
CM Input Voltage − V
Figure 41. CM Input Bias Current vs CM Input Voltage
Figure 42. Differential Output Offset Voltage vs CM Input
Voltage
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50
Output Common−Mode Offset − mV
40
30
20
10
0
−10
−20
−30
−40
−50
−2.5
−2
−1.5
−1
−0.5
0
0.5
1
1.5
2
2.5
CM Input Voltage − V
Figure 43. Output Common-Mode Offset vs CM Input Voltage
7.8.2 Typical Characteristics: VS+ – VS– = 3 V
Test conditions at VS+ = +1.5 V, VS– = –1.5 V, CM = open, VOD = 1 VPP, RF = 349 Ω, RL = 200-Ω differential, G = 10 dB,
single-ended input, and input and output referenced to midrail, unless otherwise noted.
Table 2. Table of Graphs
FIGURE
Small-Signal Frequency Response
Figure 44
Large-Signal Frequency Response
Harmonic
Distortion
Intermodulation
Distortion
Output Intercept Point
Figure 45
HD2, G = 6 dB, VOD = 1 VPP
vs Frequency
Figure 46
HD3, G = 6 dB, VOD = 1 VPP
vs Frequency
Figure 47
HD2, G = 10 dB, VOD = 1 VPP
vs Frequency
Figure 48
HD3, G = 10 dB, VOD = 1 VPP
vs Frequency
Figure 49
HD2, G = 14 dB, VOD = 1 VPP
vs Frequency
Figure 50
HD3, G = 14 dB, VOD = 1 VPP
vs Frequency
Figure 51
IMD2, G = 6 dB, VOD = 1 VPP
vs Frequency
Figure 52
IMD3, G = 6 dB, VOD = 1 VPP
vs Frequency
Figure 53
IMD2, G = 10 dB, VOD = 1 VPP
vs Frequency
Figure 54
IMD3, G = 10 dB, VOD = 1 VPP
vs Frequency
Figure 55
IMD2, G = 14 dB, VOD = 1 VPP
vs Frequency
Figure 56
IMD3, G = 14 dB, VOD = 1 VPP
vs Frequency
Figure 57
OIP2
vs Frequency
Figure 58
OIP3
vs Frequency
Figure 59
0.1 dB Flatness
Figure 60
S-Parameters
vs Frequency
Figure 61
Transition Rate
vs Output Voltage
Figure 62
Transient Response
Figure 63
Settling Time
Figure 64
Output Voltage Swing
vs Load Resistance
Figure 65
Rejection Ratio
vs Frequency
Figure 66
Overdrive Recovery
Output Impedance
Figure 67
vs Frequency
Turnoff Time
Figure 68
Figure 69
Turnon Time
Figure 70
Output Balance Error
vs Frequency
Figure 71
Noise Figure
vs Frequency
Figure 72
CM Input Impedance
vs Frequency
Figure 73
18
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Typical Characteristics: VS+ – VS– = 3 V (continued)
Table 2. Table of Graphs (continued)
FIGURE
Differential Output Offset Voltage
vs CM Input Voltage
Figure 74
Output Common-Mode Offset
vs CM Input Voltage
Figure 75
22
22
VOD = 100 mVPP
20
VOD = 1 VPP
20
G = 20 dB
G = 20 dB
18
16
Large Signal Gain − dB
Small Signal Gain − dB
18
G = 14 dB
14
12
G = 10 dB
10
8
G = 6 dB
6
4
16
G = 14 dB
14
12
G = 10 dB
10
8
G = 6 dB
6
4
2
2
0
0
0.1
1
10
100
f - Frequency - MHz
1000
10000
0.1
Figure 44. Small-Signal Frequency Response
10
100
f− Frequency − MHz
1
1000
10000
Figure 45. Large-Signal Frequency Response
G = 6 dB,
VOD = 1 VPP
-50
3rd Order Harmonic Distortion − dBc
2nd Order Harmonic Distortion - dBc
-40
-60
-70
-80
RL = 100 W
-90
RL = 200 W
RL = 1 kW
-100
-110
-120
G = 6 dB,
VOD = 1 VPP
−40
−50
−60
RL = 100 W
−70
RL = 200 W
−80
−90
RL = 1 kW
RL = 500 W
RL = 500 W
−100
1
10
100
f - Frequency - MHz
−40
3rd Order Harmonic Distortion − dBc
2nd Order Harmonic Distortion − dBc
−40
G = 10 dB,
VOD = 1 VPP
−60
−70
−80
R L = 200 Ω
−90
−100
−110
−120
1
1000
Figure 47. HD3 vs Frequency
Figure 46. HD2 vs Frequency
−50
10
100
f − Frequency − MHz
1
1000
R L = 1 kΩ
R L = 500 Ω
G = 10 dB,
COD = 1 VPP
−50
−60
−70
RL = 1 kW
−80
RL = 500 W
−90
RL = 200 W
−100
10
100
f − Frequency − MHz
1000
1
100
10
f − Frequency − MHz
1000
Figure 49. HD3 vs Frequency
Figure 48. HD2 vs Frequency
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−40
G = 14 dB,
VOD = 1 VPP
−50
3rd Order Harmonic Distortion − dBc
2nd Order Harmonic Distortion − dBc
−40
−60
R L = 100 Ω
−70
−80
R L = 200 Ω
−90
−100
R L = 500 Ω
−110
R L= 1 kΩ
−120
10
1
100
−60
RL = 100 W
−70
RL = 200 W
−80
RL = 500 W
−90
RL = 1 kW
−100
1000
f − Frequency − MHz
10
100
f − Frequency − MHz
Figure 50. HD2 vs Frequency
Figure 51. HD3 vs Frequency
1
−40
IMD3 − Intermodulation Distortion − dBc
Gain = 6 dB,
VOD = 1 VPP
RL = 500 W
RL = 1 kW
−50
−60
RL = 100 W
−70
RL = 200 W
−80
−90
−100
0
Gain = 6 dB,
VOD = 1 VPP Envelope
−40
RL = 100 W
−50
−60
RL = 1 kW
RL = 500 W
−70
−80
−90
RL = 200 W
−100
50
100
f − Frequency − MHz
150
200
0
50
Figure 52. IMD2 vs Frequency
−40
RL = 500 W
IMD3 - IntermodulationDistortion - dBc
IMD − Intermodulation Distortion − dBc
2
-30
Gain = 10 dB,
VOD = 1 VPP Envelope
−50
−60
RL = 1 kW
RL = 100 W
−70
RL = 200 W
−80
100
150
f − Frequency − MHz
200
Figure 53. IMD3 vs Frequency
−30
−90
−100
Gain = 10 dB,
VOD = 1 VPP Envelope
-40
-50
RL = 100 W
-60
RL = 500 W
-70
RL = 1 kW
-80
-90
RL = 200 W
-100
0
50
100
f − Frequency − MHz
150
200
05
0
100
150
f - Frequency - MHz
200
Figure 55. IMD3 vs Frequency
Figure 54. IMD2 vs Frequency
20
1000
−30
−30
IMD2 − Intermodulation Distortion − dBc
G = 14 dB,
VOD = 1 VPP
−50
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−30
Gain = 14 dB,
VOD = 1 VPP Envelope
−40
IMD3 − Intermodulation Distortion − dBc
IMD 2 − Intermodulation Distortion − dBc
−30
RL = 500 W
−50
−60
RL = 1 kW
RL = 100 W
−70
RL = 200 W
−80
−90
Gain = 14 dB,
VOD = 1 VPP Envelope
−40
RL = 100 W
−50
−60
RL = 500 W
−70
RL = 1 kW
−80
RL = 200 W
−90
−100
−100
0
50
100
150
f − Frequency − MHz
200
0
50
Figure 56. IMD2 vs Frequency
200
Figure 57. IMD3 vs Frequency
80
45
OIP3 − Output Intercept Point − dBm
Gain = 6 dB
OIP2 − Output Intercept Point − dBm
100
150
f − Frequency − MHz
75
70
65
60
Gain = 10 dB
55
50
Gain = 14 dB
45
40
35
Gain = 6 dB
40
Gain = 10 dB
35
30
25
Gain = 14 dB
20
15
30
0
50
150
100
f − Frequency − MHz
0
200
Figure 58. OIP2, dBm vs Frequency
50
150
100
f − Frequency − MHz
250
200
Figure 59. OIP3, dBm vs Frequency
10.2
0
VOD = 1 VPP
S21
-10
-20
S-Parameters - dB
Signal Gain − dB
10.1
10
S11
-30
-40
S22
-50
9.9
-60
S12
9.8
0.1
-70
1
10
100
f − Frequency − MHz
1000
10000
1
Figure 60. 0.1-dB Flatness
10
100
f = Frequency - MHz
1000
Figure 61. S-Parameters vs Frequency
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4000
VOD − Differential Output Voltage - V
0.6
Rising
3000
2500
Falling
2000
1500
1000
500
0
0.2
1.4
1
1.2
0.4
0.6
0.8
VOD − Differential Output Voltage - VSTEP
0
0.5
0.4
0.3
VOD = 1 Vstep
0.2
0.1
0
−0.1
−0.2
−0.3
−0.4
−0.5
−0.6
t − Time − 500 ps/div
Figure 63. Transient Response
Figure 62. Transition Rate vs Output Voltage
5
2.5
Percent of Final Voltage - V
4
VOD - Differential Output Voltage - V
VOD = 1 Vstep
3
2
1
0
−1
−2
−3
−4
2
1.5
1
0.5
0
−5
100
RL - Load Resistance - W
0
t − Time − 500 ps/div
Figure 64. Settling Time
Figure 65. Output Voltage Swing vs Load Resistance
3
90
V OD − Differential Output Voltage - V
PSRR−
80
CMRR
Rejection Ratio −dB
70
60
PSRR+
50
40
0.6
2.5
2
Input
0.4
1.5
1
0.5
0.2
Output
0
0
−0.5
30
−0.2
−1
−1.5
20
10
0
0.01
0.1
1
10
100
f − Frequency − MHz
1000
−0.4
−2
−2.5
−3
−0.6
t − Time − 200 ns/div
Figure 66. Rejection Ratio vs Frequency
22
1000
Input Voltage - V
SR − Transition Rate − V/ µ s
3500
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Figure 67. Overdrive Recovery
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3
1
10
1
2.5
0.8
Output
1.5
0.4
PD
0.5
0
0.1
1
10
f − Frequency− MHz
0
1000
100
t – Time – 2 ms/div
Figure 69. Turnoff Time
Figure 68. Output Impedance vs Frequency
10
3
0
PD
0.8
2
1.5
0.6
Output
Power Down Input − V
2.5
1
Output Balance Error − dB
1.2
VOD - Differential Output Voltage - V
1
0.2
0.1
−10
−20
−30
0.4
1
0.2
0.5
−50
0
−60
0.1
0
−40
1
t − Time − 50 ns/div
Figure 70. Turnon Time
10
100
f − Frequency − MHz
1000
Figure 71. Output Balance Error vs Frequency
20
100
19
50 - W System
Gain = 6 dB
CM Input Impedance − k Ω
18
NF − Noise Figure − dB
2
0.6
Power Down Input − V
VOD − Differential Ouput Voltage - V
Z o − Output Impedance − Ω
100
17
Gain = 10 dB
16
15
Gain = 14 dB
14
13
12
10
1
0.1
Gain = 20 dB
11
10
0
50
100
150
f − Frequency − MHz
200
Figure 72. Noise Figure vs Frequency
0.01
0.1
1
100
10
f − Frequency − MHz
1000
Figure 73. CM Input Impedance vs Frequency
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50
Output Common−Mode Offset − mV
Differential Output Offset V oltage − mV
5
4
3
2
1
0
−1
−1.5
−1
−0.5
0
0.5
CM Input Voltage − V
1
1.5
Figure 74. Differential Output Offset Voltage vs CM Input
Voltage
24
40
30
20
10
0
−10
−20
−30
−40
−50
−1.5
−1
−0.5
0
0.5
CM Input Voltage - V
1
1.5
Figure 75. Output Common-Mode Offset vs CM Input
Voltage
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8 Detailed Description
8.1 Overview
The THS4509 is a fully differential amplifier with integrated common-mode control designed to provide low
distortion amplification to wide bandwidth differential signals. The common-mode feedback circuit sets the output
common-mode voltage independent of the input common mode, as well as forcing the V+ and V − outputs to be
equal in magnitude and opposite in phase, even when only one of the inputs is driven as in single to differential
conversion.
8.2 Functional Block Diagram
V+
+OUT
-IN
±
10 k
High-Aol +
Differential I/O
Amplifier ±
+IN
10 k
+
-OUT
V+
50 k
±
Vcm
Error
Amplifier
+
EN
Vcm
Buffer
50 k
V±
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8.3 Feature Description
8.3.1 Test Circuits
The THS4509 is tested with the following test circuits built on the evaluation module (EVM). For simplicity,
power-supply decoupling is not shown—see Layout for recommendations. Depending on the test conditions,
component values are changed per Table 3 and Table 4, or as otherwise noted. The signal generators used are
AC-coupled, 50-Ω sources, and a 0.22-μF capacitor and 49.9-Ω resistor to ground are inserted across RIT on the
alternate input to balance the circuit. A split power supply is used to ease the interface to common test
equipment, but the amplifier can be operated single-supply as described in Typical Applications with no impact
on performance.
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Feature Description (continued)
Table 3. Gain Component Values
GAIN
RF
RG
RIT
6 dB
348 Ω
165 Ω
61.9 Ω
10 dB
348 Ω
100 Ω
69.8 Ω
14 dB
348 Ω
56.2 Ω
88.7 Ω
20 dB
348 Ω
16.5 Ω
287 Ω
Note the gain setting includes 50-Ω source impedance. Components are chosen to achieve gain and 50-Ω
input termination.
Table 4. Load Component Values
RL
RO
ROT
ATTEN.
100 Ω
25 Ω
Open
6 dB
200 Ω
86.6 Ω
69.8 Ω
16.8 dB
499 Ω
237 Ω
56.2 Ω
25.5 dB
1k Ω
487 Ω
52.3 Ω
31.8 dB
Note the total load includes 50-Ω termination by the test equipment. Components are chosen to achieve
load and 50-Ω line termination through a 1:1 transformer.
Due to the voltage divider on the output formed by the load component values, the amplifier output is attenuated.
The column Atten in Table 4 shows the attenuation expected from the resistor divider. When using a transformer
at the output as shown in Figure 77, the signal sees slightly more loss, and these numbers are approximate.
8.3.1.1 Frequency Response
The circuit shown in Figure 76 is used to measure the frequency response of the circuit.
From
50 Ω
Source
VIN
RG
RF
VS+
R IT
49.9 Ω
RG
0.22 µF
THS4509
CM
R IT
VS−
49.9 Ω
49.9 Ω
100 Ω
Output Measured
Here With High
Impedance
Differential Probe
Open
0.22 µF
RF
Copyright © 2016, Texas Instruments Incorporated
Figure 76. Frequency Response Test Circuit
A network analyzer is used as the signal source and as the measurement device. The output impedance of the
network analyzer is 50 Ω. RIT and RG are chosen to impedance match to 50 Ω, and to maintain the proper gain.
To balance the amplifier, a 0.22-μF capacitor and 49.9-Ω resistor to ground are inserted across RIT on the
alternate input.
The output is probed using a high-impedance differential probe across the 100-Ω resistor. The gain is referred to
the amplifier output by adding back the 6-dB loss due to the voltage divider on the output.
8.3.1.2 Distortion and 1-dB Compression
The circuit shown in Figure 77 is used to measure harmonic distortion, intermodulation distortion, and 1-db
compression point of the amplifier.
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Feature Description (continued)
From
50 Ω
Source
VIN
RF
RG
VS+
RIT
RO
RG
0.22 µF
THS 4509
CM
RIT
VS−
49.9 Ω
RO
1:1
VOUT
ROT
To 50 Ω
Test
Equipment
Open
0.22 µF
RF
Copyright © 2016, Texas Instruments Incorporated
Figure 77. Distortion Test Circuit
A signal generator is used as the signal source and the output is measured with a spectrum analyzer. The output
impedance of the signal generator is 50 Ω. RIT and RG are chosen to impedance-match to 50 Ω, and to maintain
the proper gain. To balance the amplifier, a 0.22-μF capacitor and 49.9-Ω resistor to ground are inserted across
RIT on the alternate input.
A low-pass filter is inserted in series with the input to reduce harmonics generated at the signal source. The level
of the fundamental is measured, then a high-pass filter is inserted at the output to reduce the fundamental so that
it does not generate distortion in the input of the spectrum analyzer.
The transformer used in the output to convert the signal from differential to single-ended is an ADT1-1WT. It
limits the frequency response of the circuit so that measurements cannot be made below approximately 1 MHz.
The 1-dB compression point is measured with a spectrum analyzer with 50-Ω double termination or 100-Ω
termination; see Table 4. The input power is increased until the output is 1 dB lower than expected. The number
reported in the table data is the power delivered to the spectrum analyzer input. Add 3 dB to refer to the amplifier
output.
8.3.1.3 S-Parameter, Slew Rate, Transient Response, Settling Time, Output Impedance, Overdrive,
Output Voltage, Turnon, and Turnoff Time
The circuit shown in Figure 78 is used to measure s-parameters, slew rate, transient response, settling time,
output impedance, overdrive recovery, output voltage swing, turnon, and turnoff times of the amplifier. For output
impedance, the signal is injected at VOUT with VIN left open and the drop across the 49.9-Ω resistor is used to
calculate the impedance seen looking into the amplifier output.
Because S21 is measured single-ended at the load with 50-Ω double termination, add 12 dB to refer to the
amplifier output as a differential signal.
From V IN
50 Ω
Source
RF
RG
VS+
R IT
49.9 Ω
VOUT+
RG
THS 4509
49.9 Ω
VOUT−
0.22 µF
49.9 Ω
CM
R IT
VS−
To 50 Ω
Test
Equipment
Open
0.22 µF
RF
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Figure 78. S-Parameter, SR, Transient Response, Settling Time, ZO, Overdrive Recovery, VOUT Swing,
Turnon, and Turnoff Test Circuit
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Feature Description (continued)
8.3.1.4 CM Input
The circuit shown in Figure 79 is used to measure the frequency response and input impedance of the CM input.
Frequency response is measured single-ended at VOUT+ or VOUT– with the input injected at VIN, RCM = 0 Ω, and
RCMT = 49.9 Ω. The input impedance is measured with RCM = 49.9 Ω with RCMT = open, and calculated by
measuring the voltage drop across RCM to determine the input current.
RG
0.22 mF
RF
VS+
RIT
49.9 W
49.9 W
VOUT–
RG
0.22 mF
THS4509
49.9 W
VOUT+
CM
RIT
RCM
VIN
VS–
49.9 W
To
50-W
Test
Equipment
RCMT
RF
From
50-W
source
Copyright © 2016, Texas Instruments Incorporated
Figure 79. CM Input Test Circuit
8.3.1.5 CMRR and PSRR
The circuit shown in Figure 80 is used to measure the CMRR and PSRR of VS+ and VS–. The input is switched
appropriately to match the test being performed.
348 Ω
VS+
PSRR+
From VIN
50 Ω
CMRR
Source
VS+
49.9 Ω
100 Ω
100 Ω
THS4509
69.8 Ω
VS−
PSRR−
VS−
CM
49.9 Ω
100 Ω
Open
0.22 µF
Output
Measured
Here
With High
Impedance
Differential
Probe
348 Ω
Copyright © 2016, Texas Instruments Incorporated
Figure 80. CMRR and PSRR Test Circuit
8.4 Device Functional Modes
The THS4509 has one main functional mode with two variants. The amplifier functions as either a differential to
differential or a single-ended to differential amplifier. In either of these modes the amplifier output operating point
(common-mode voltage) is set independently by the CM pin.
The THS4509 also features a power-down state for reduced power consumption when the amplifier is not
required to be operational.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The THS4509 is a fully-configurable, differential operational amplifier. The closed-loop gain is set by external
resistors. Many performance metrics are set by the matching of these external resistors, so 0.1% or better
tolerance resistors are recommended.
The amplifier output common-mode voltage is set by the CM pin. From the CM pin to the amplifier outputs there
is a fixed gain of 1 V/V so that the amplifier output voltage is identical to the voltage applied to the CM pin. This
pin must be driven by a low impedance reference and must also be bypassed to ground using a 0.1-µF ceramic,
low ESR resistor. The ideal common-mode voltage is equal to the voltage that is midway between the positive
and negative supply voltages.
The THS4509 can be operated from either single or split power supplies with a range of 3 V to 5 V of total supply
voltage. When selecting a power supply voltage, make sure to provide adequate margin for input and output
voltage levels. In many cases, split supplies are the best option. It is not necessary to have power supply
voltages symmetrical around ground. For example, –1 V and +4 V is a valid power supply configuration.
9.2 Typical Applications
The following circuits show application information for the THS4509. For simplicity, power-supply decoupling
capacitors are not shown in these diagrams. See the Layout section for recommendations. For more detail on the
use and operation of fully-differential op amps refer to the application report, Fully-Differential Amplifiers
(SLOA054).
9.2.1 Differential Input to Differential Output Amplifier
The THS4509 is a fully-differential op amp, and can be used to amplify differential input signals to differential
output signals. A basic block diagram of the circuit is shown in Figure 81 (CM input not shown). The gain of the
circuit is set by RF divided by RG.
Depending on the source and load, input and output termination can be accomplished by adding RIT and RO.
RF
Differential
Input
Differential
Output
VS+
RG
V IN+
+
–
VOUT–
THS4509
VIN–
RG
– +
VOUT+
VS–
RF
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Figure 81. Differential Input to Differential-Output Amplifier
9.2.1.1 Design Requirements
The following sections detail how to determine if your design meets these requirements.
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Typical Applications (continued)
The main design requirements for the THS4509 are the input common mode, the output swing voltage. Other
design requirements are signal linearity and accuracy. With flexible supply voltage ranges and externally
configurable resistors the THS4509 can be configured to meet many design requirements.
Table 5 lists the design parameters of this example.
Table 5. Design Parameters
PARAMETER
EXAMPLE VALUE
Gain
6 dB
Output swing
2 Vpp
Harmonic distortion
>75 dBc
Load resistance
100 Ω
9.2.1.2 Detailed Design Procedure
The first parameter is gain. Gain is set by external resistors as shown in Table 3. With a gain of 6 dB, the
appropriate resistor values are 348 Ω for RF and 165 Ω for RG and 61.9 Ω for the termination resistor. These
resistor values are for a 50-Ω source. The desired output swing of 2 Vpp and distortion of –75 dBc means that a
supply voltage of 5 V is required. Further design details are covered in this section.
9.2.1.2.1 Input Common-Mode Voltage Range
The input common-mode voltage of a fully-differential op amp is the voltage at the + and – input pins of the op
amp.
It is important to not violate the input common-mode voltage range (VICR) of the op amp. Assuming the op amp is
in linear operation the voltage across the input pins is only a few millivolts at most. So finding the voltage at one
input pin determines the input common-mode voltage of the op amp.
Treating the negative input as a summing node, the voltage is given by Equation 1:
ö
ö æ
æ
RG
RF
÷
÷ + ç VIN- ´
VIC = çç VOUT + ´
÷
ç
R G + R F ÷ø
R G + RF ø è
è
(1)
To determine the VICR of the op amp, the voltage at the negative input is evaluated at the extremes of VOUT+.
As the gain of the op amp increases, the input common-mode voltage becomes closer and closer to the input
common-mode voltage of the source.
9.2.1.2.2 Setting the Output Common-Mode Voltage
The output common-mode voltage is set by the voltage at the CM pin(s). The internal common-mode control
circuit maintains the output common-mode voltage within 3-mV offset (typical) from the set voltage, when set
within 0.5 V of midsupply, with less than 4-mV differential offset voltage. If left unconnected, the common-mode
set point is set to midsupply by internal circuitry, which may be overdriven from an external source. Figure 82 is
representative of the CM input. The internal CM circuit has about 700 MHz of –3-dB bandwidth, which is required
for best performance, but it is intended to be a DC bias input pin. Bypass capacitors are recommended on this
pin to reduce noise at the output. The external current required to overdrive the internal resistor divider is given
by Equation 2:
IEXT =
2VCM - (VS + - VS - )
50 kW
where
•
30
VCM is the voltage applied to the CM pin
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VS+
50 kW
I EXT
to internal
CM circuit
CM
50 kW
V S–
Figure 82. CM Input Circuit
9.2.1.2.3 Single-Supply Operation (3 V to 5 V)
To facilitate testing with common lab equipment, the THS4509 EVM allows split-supply operation, and the
characterization data presented in this data sheet were taken with split-supply power inputs. The device can
easily be used with a single-supply power input without degrading the performance. Figure 83, Figure 84, and
Figure 85 show DC and AC-coupled single-supply circuits with single-ended inputs. These configurations all
allow the input and output common-mode voltage to be set to midsupply allowing for optimum performance. The
information presented here can also be applied to differential input sources.
In Figure 83, the source is referenced to the same voltage as the CM pin (VCM). VCM is set by the internal circuit
to midsupply. RT along with the input impedance of the amplifier circuit provides input termination, which is also
referenced to VCM.
NOTE
RS and RT are added to the alternate input from the signal input to balance the amplifier.
Alternately, one resistor can be used equal to the combined value RG+ RS || RT on this
input. This is also true of the circuits shown in Figure 84 and Figure 85.
RG
RS
VS+
RT
VSignal
RF
RO
VCM
VBias= VCM
RG
RS
RT
THS4509
RO
VOUTVOUT+
CM
VS–
VCM
VCM VCM
RF
Copyright © 2016, Texas Instruments Incorporated
Figure 83. THS4509 DC-Coupled Single-Supply With Input Biased to VCM
In Figure 84 the source is referenced to ground and so is the input termination resistor. RPU is added to the
circuit to avoid violating the VICR of the op amp. The proper value of resistor to add can be calculated from
Equation 3:
R PU =
(VIC - VS+ )
æ 1
VCM çç
è RF
æ 1
ö
1
÷÷ - VIC çç
+
è R IN R F
ø
ö
÷÷
ø
(3)
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V S+
R PU
RS
RF
RG
RT
V Signal
V S+
V S+
RO
V OUT-
R PU
THS 4509
RG
RO
V OUT+
RS
V S-
RT
CM
RF
Copyright © 2016, Texas Instruments Incorporated
Figure 84. THS4509 DC-Coupled Single-Supply With RPU Used to Set VIC
VIC is the desired input common-mode voltage, VCM = CM, and RIN = RG+ RS || RT. To set to midsupply, make
the value of RPU = RG+ RS || RT.
Table 6 is a modification of Table 3 to add the proper values with RPU assuming a 50-Ω source impedance and
setting the input and output common-mode voltage to midsupply.
Table 6. RPU Values for Various Gains
GAIN
RF
RG
RIT
RPU
6 dB
348 Ω
169 Ω
64.9 Ω
200 Ω
10 dB
348 Ω
102 Ω
78.7 Ω
133 Ω
14 dB
348 Ω
61.9 Ω
115 Ω
97.6 Ω
20 dB
348 Ω
40.2 Ω
221 Ω
80.6 Ω
There are two drawbacks to this configuration. One is that it requires additional current from the power supply.
Using the values shown for a gain of 10 dB requires 37 mA more current with 5-V supply, and 22-mA more
current with 3-V supply.
The other drawback is that this configuration also increases the noise gain of the circuit. In the 10-dB gain case,
noise gain increases by a factor of 1.5.
Figure 85 shows AC coupling to the source. Using capacitors in series with the termination resistors allows the
amplifier to self-bias both input and output to midsupply.
C
RS
V Signal
RG
RT
RF
V S+= 3V to 5V
RO
C
V OUTRG
THS 4509
RO
V OUT+
RS
RT
C
C
CM
V S-
RF
Figure 85. THS4509 AC-Coupled Single-Supply
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9.2.1.2.4 THS4509 and ADS5500 Combined Performance
The THS4509 is designed to be a high-performance drive amplifier for high-performance data converters like the
ADS5500 14-bit 125-MSPS ADC. Figure 86 shows a circuit combining the two devices, and Figure 87 shows the
combined SNR and SFDR performance versus frequency with –1-dBFS input signal level sampling at 125
MSPS. The THS4509 amplifier circuit provides 10 dB of gain, converts the single-ended input to differential, and
sets the proper input common-mode voltage to the ADS5500. The 100-Ω resistors and 2.7-pF capacitor between
the THS4509 outputs and ADS5500 inputs along with the input capacitance of the ADS5500 limit the bandwidth
of the signal to 115 MHz (–3 dB). For testing, a signal generator is used for the signal source. The generator is
an ac-coupled 50-Ω source. A band-pass filter is inserted in series with the input to reduce harmonics and noise
from the signal source. Input termination is accomplished through the 69.8-Ω resistor and 0.22-μF capacitor to
ground in conjunction with the input impedance of the amplifier circuit. A 0.22-μF capacitor and 49.9-Ω resistor is
inserted to ground across the 69.8-Ω resistor and 0.22-μF capacitor on the alternate input to balance the circuit.
Gain is a function of the source impedance, termination, and 348-Ω feedback resistor. Refer to Table 6 for
component values to set proper 50-Ω termination for other common gains. A split power supply of +4 V and –1 V
is used to set the input and output common-mode voltages to approximately midsupply while setting the input
common-mode of the ADS5500 to the recommended +1.55 V. This configuration maintains maximum headroom
on the internal transistors of the THS4509 to insure optimum performance.
VIN
From
50-W
source
348 W
100 W
4V
69.3 W
0.22 mF
THS 4509
100 W
49.9 W
14 -bit,
125 MSPS
100 W
A IN +
ADS5500
A IN - CM
100 W2.7 pF
CM
69.8 W
49.9 W
-1 V
0.22 mF
0.22 mF
348 W
0.1 mF
0.1 mF
Copyright © 2016, Texas Instruments Incorporated
SFDR (dBc), SNR (dBFS)
Figure 86. THS4509 and ADS5500 Circuit
90
SFDR (dBc)
85
80
SNR (dBFS)
75
70
65
10
20
30
40
50
60
70
80
Input Frequency - MHz
90
100
110
Figure 87. THS4509 and ADS5500 SFDR and SNR Performance vs Frequency
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Figure 88 shows the two-tone FFT of the THS4509 and ADS5500 circuit with 65-MHz and 70-MHz input
frequencies. The SFDR is 90 dBc.
Figure 88. THS4509 and ADS5500 2-Tone FFT With 65-MHz and 70-MHz Inputs
9.2.1.2.5 THS4509 and ADS5424 Combined Performance
Figure 89 shows the THS4509 driving the ADS5424 ADC, and Figure 90 shows the combined SNR and SFDR
performance versus frequency with –1-dBFS input signal level and sampling at 80 MSPS.
As before, the THS4509 amplifier provides 10 dB of gain, converts the single-ended input to differential, and sets
the proper input common-mode voltage to the ADS5424. Input termination and circuit testing is the same as
described above for the THS4509 and ADS5500 circuit.
The 225-Ω resistors and 2.7-pF capacitor between the THS4509 outputs and ADS5424 inputs (along with the
input capacitance of the ADC) limit the bandwidth of the signal to about 100MHz (–3 dB).
Because the ADS5424 recommended input common-mode voltage is 2.4 V, the THS4509 is operated from a
single power-supply input with VS+ = 5 V and VS– = 0 V (ground).
From
50-W
source
V IN
348 W
100 W
69 .8 W
5V
225 W
0.22 mF
100
49 .9 W
0.22 mF
69 .8 W
THS4509
225 W
2 .7 pF
CM
0.22 mF
348 W
14-bit,
105 MSPS
A IN+
ADS 5424
A IN– VBG
49.9 W
0.1 mF
0.1 mF
Copyright © 2016, Texas Instruments Incorporated
Figure 89. THS4509 and ADS5424 Circuit
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9.2.1.3 Application Curve
SFDR (dBc), SNR (dBFS)
95
90
SFDR (dBc)
85
80
75
SNR (dBFS)
70
10
20
30
40
50
Input Frequency - MHz
60
70
Figure 90. THS4509 and ADS5424 SFDR and SNR Performance vs Frequency
9.2.2 Single-Ended Input to Differential Output Amplifier
The THS4509 can be used to amplify and convert single-ended input signals to differential output signals. A
basic block diagram of the circuit is shown in Figure 91 (CM input not shown). The gain of the circuit is again set
by RF divided by RG.
Single-Ended
Input
RF
RG
VS
Differential
Output
+
RG
–
VOUT–
THS 4509
–
+
VOUT+
VS
RF
Copyright © 2016, Texas Instruments Incorporated
Figure 91. Single-Ended Input to Differential Output Amplifier
10 Power Supply Recommendations
The THS4509 can accommodate supply voltages from 3 V to 5 V, either single supply or split supply. Unless the
application calls for AC coupling and a very small signal the 5-V supply option must be chosen. In many cases,
split supplies are necessary because it is important to have the output common-mode voltage set very close to
the midsupply voltage. For example, when driving an ADC with an input common-mode voltage of 1 V the ideal
power supply voltage would be +3.5 V and –1.5 V.
Power supply decoupling capacitors must be placed within 2 mm of the amplifier power supply pins. These
capacitors must be very low ESR and must have a self resonant frequency above 200 mHz.
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11 Layout
11.1 Layout Guidelines
It is recommended to follow the layout of the external components near the amplifier, ground plane construction,
and power routing of the EVM as closely as possible.
11.1.1 General Guidelines
1. Signal routing should be direct and as short as possible into and out of the op amp circuit.
2. The feedback path should be short and direct; avoid vias.
3. Ground or power planes should be removed from directly under the amplifier input and output pins.
4. An output resistor is recommended on each output, as near to the output pin as possible.
5. Two 10-μF and two 0.1-μF power-supply decoupling capacitors must be placed as near to the power-supply
pins as possible.
6. Two 0.1-μF capacitors must be placed between the CM input pins and ground. This configuration limits noise
coupled into the pins. One each must be placed to ground near pin 4 and pin 9.
7. TI recommends splitting the ground panel on layer 2 (L2) as shown below and to use a solid ground on layer
3 (L3). A single-point connection must be used between each split section on L2 and L3.
8. A single-point connection to ground on L2 is recommended for the input termination resistors R1 and R2.
This configuration must be applied to the input gain resistors if termination is not used.
9. The THS4509 recommended PCB footprint is shown in Figure 92.
11.1.2 PowerPAD PCB Layout Considerations
Although there are many ways to properly heatsink the PowerPAD package, the following steps illustrate the
recommended approach:
1. Prepare the PCB with a top side etch pattern as shown in Figure 92. There must be etch for the leads as
well as etch for the thermal pad.
2. Place five holes in the area of the thermal pad. The holes must be 13 mils (0.013 in, 0.33 mm) in diameter.
Keep them small so that solder wicking through the holes is not a problem during reflow.
3. Additional vias may be placed anywhere along the thermal plane outside of the thermal pad area. They help
dissipate the heat generated by the IC. These additional vias may be larger than the 13-mil diameter vias
directly under the thermal pad. They can be larger because they are not in the thermal pad area to be
soldered, so that wicking is not a problem.
4. Connect all holes to the internal ground plane.
5. When connecting these holes to the ground plane, do not use the typical web or spoke via connection
methodology. Web connections have a high thermal resistance connection that is useful for slowing the heat
transfer during soldering operations. This resistance makes the soldering of vias that have plane connections
easier. In this application, however, low thermal resistance is desired for the most efficient heat transfer.
Therefore, the holes under the IC PowerPAD package should make the connection to the internal ground
plane, with a complete connection around the entire circumference of the plated-through hole.
6. The top-side solder mask must leave the terminals of the package and the thermal pad area with its five
holes exposed. The bottom-side solder mask should cover the five holes of the thermal pad area. This
configuration prevents solder from being pulled away from the thermal pad area during the reflow process.
7. Apply solder paste to the exposed thermal pad area and all of the IC terminals.
8. With these preparatory steps in place, the IC is simply placed in position and run through the solder reflow
operation as any standard surface-mount component. This process results in a part that is properly installed.
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Layout Guidelines (continued)
0.144
0.049
0.012
Pin 1
0.0095
0.015
0.144
0.0195 0.0705
0.010
vias
0.032
0.030
0.0245
Top View
Figure 92. PowerPAD PCB Etch and Via Pattern
The next consideration is the package constraints. The two sources of heat within an amplifier are quiescent
power and output power. The designer must never forget about the quiescent heat generated within the device,
especially multi-amplifier devices. Because these devices have linear output stages (Class AB), most of the heat
dissipation is at low output voltages with high output currents.
The other key factor when dealing with power dissipation is how the devices are mounted on the PCB. The
PowerPAD devices are extremely useful for heat dissipation. But the device should always be soldered to a
copper plane to fully use the heat dissipation properties of the PowerPAD. The SOIC package, on the other
hand, is highly dependent on how it is mounted on the PCB. As more trace and copper area is placed around the
device, θJA decreases and the heat dissipation capability increases. For a single package, the sum of the RMS
output currents and voltages must be used to choose the proper package.
11.2 Layout Example
Figure 93 is the THS4509 EVAL1 EVM schematic; layers 1 through 4 of the PCB are shown Figure 94.
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GND
VS−
J4
VS+
J5
J6
VEE
0.1 µF
TP1
C9
0.1 µF
C10
VCC
10 µF
C4
10 µF
J1
C15
R12
49.9 Ω
PD
2
3
VO+
−
+
R4
4
VO−
PwrPad 10
R7
86.6 Ω
R8
86.6 Ω
9
R2
69.8 Ω
15 13
14 16 VEE
R6
J3
T1
R11
69.8 Ω
6
C8
open
5
4
C1
open
1
3
XFMR_ADT1−1WT
Vocm
100 Ω
R10
open
C14
0.1 µF
C7
open
C2
open
J7
348 Ω
TP3
TP2
C13
R9
open
7
U1 11
0.22 µF
J2
12
0.1 µF
C12
VCC
VCC
8
6
100 Ω
0.1 µF
C5
J8
348 Ω
5
10 µF
C3
R5
R1
69.8 Ω
R3
10 µF
C6
VEE
C11
0.1 µF
Figure 93. THS4509 EVAL1 EVM Schematic
Figure 94. THS4509 EVAL1 EVM Layer 1 Through Layer 4
11.3 PowerPAD™ Design Considerations
The THS4509 is available in a thermally-enhanced PowerPAD family of packages. These packages are
constructed using a downset leadframe on which the die is mounted (see Figure 95a and Figure 95b). This
arrangement results in the lead frame being exposed as a thermal pad on the underside of the package (see
Figure 95c). Because this thermal pad has direct thermal contact with the die, excellent thermal performance can
be achieved by providing a good thermal path away from the thermal pad.
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PowerPAD™ Design Considerations (continued)
NOTE
The THS4509 has no electrical connection between the PowerPAD and circuitry on the
die. Connecting the PowerPAD to any potential voltage between VS+ and VS– is
acceptable. It is most important that it be connected for maximum heat dissipation.
The PowerPAD package allows both assembly and thermal management in one manufacturing operation.
During the surface-mount solder operation (when the leads are being soldered), the thermal pad can also be
soldered to a copper area underneath the package. Through the use of thermal paths within this copper area,
heat can be conducted away from the package into either a ground plane or other heat dissipating device.
The PowerPAD package represents a breakthrough in combining the small area and ease of assembly of
surface-mount with the previously awkward mechanical methods of heatsinking.
DIE
Side View (a)
DIE
End View (b)
Bottom View (c)
Figure 95. Views of Thermally-Enhanced Package
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12 Device and Documentation Support
12.1 Device Support
For THS4509 device support, see the following:
• ADS5500
• ADS5424
• THS4509EVM Evaluation Module
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation, see the following:
Fully-Differential Amplifiers (SLOA054)
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
THS4509RGTR
ACTIVE
VQFN
RGT
16
3000
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
4509
THS4509RGTT
ACTIVE
VQFN
RGT
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
4509
THS4509RGTTG4
ACTIVE
VQFN
RGT
16
250
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
4509
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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