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TL082QDRQ1

TL082QDRQ1

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOIC8_150MIL

  • 描述:

    汽车级,双路,30-V,3-MHz,13-V/µs转换率,In至V+,JFET输入运算放大器

  • 数据手册
  • 价格&库存
TL082QDRQ1 数据手册
TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 FEATURES 1 • • • • • • • • • D PACKAGE (TOP VIEW) Qualified for Automotive Applications Low Power Consumption Wide Common-Mode and Differential Voltage Ranges Low Input Bias and Offset Currents Low Total Harmonic Distortion: 0.003% Typ High Input Impedance: JFET-Input Stage Latchup-Free Operation High Slew Rate: 13 V/μs Typ Common-Mode Input Voltage Range Includes VCC+ 1OUT 1IN– 1IN+ VCC– 1 8 2 7 3 6 4 5 VCC+ 2OUT 2IN– 2IN+ DESCRIPTION/ORDERING INFORMATION The TL082 JFET-input operational amplifier incorporates well-matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The device features high slew rates, low input bias and offset currents, and low offset-voltage temperature coefficient. The I-suffix device is characterized for operation from –40°C to 85°C. The Q-suffix device is characterized for operation from –40°C to 125°C. ORDERING INFORMATION (1) PACKAGE (2) TJ (1) (2) ORDERABLE PART NUMBER TOP-SIDE MARKING –40°C to 85°C SOIC – D Reel of 2500 TL082IDRQ1 TL082I –40°C to 125°C SOIC – D Reel of 2500 TL082QDRQ1 TL082Q For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007, Texas Instruments Incorporated TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 SYMBOL (EACH AMPLIFIER) IN+ + IN– - OUT SCHEMATIC (EACH AMPLIFIER) VCC+ IN+ 64W IN– OUT 128 W 64 W C1 1080 W 1080 W VCC– A. 2 Component values shown are nominal. Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) VALUE VCC+ Supply voltage, positive (2) 18 V VCC– Supply voltage, negative (2) –18 V VID Differential input voltage (3) ±30 V VI Input voltage (2) (4) ±15 V Duration of output short circuit (5) Unlimited (6) Continuous total power dissipation TA Operating free-air temperature range θJA Package thermal impedance, junction to free air (7) TL082I –40°C to 85°C TL082Q –40°C to 125°C 97°C/W Human-Body Model ESD rating (8) Operating virtual junction temperature Tstg (1) (2) (3) (4) (5) (6) (7) (8) Storage temperature range 1.5 kV (H1C) Charged-Device Model 1.5 kV (C5) Machine Model 200 V (M3) 150°C –65°C to 150°C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC–. Differential voltages are at IN+ with respect to IN–. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less. The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded. Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability. The package thermal impedance is calculated in accordance with JESD 51-7. ESD protection level per JEDEC classifications JESD22-A114 (HBM), JESD22-A115 (MM), and JESD22-C101 (CDM). Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 3 TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 ELECTRICAL CHARACTERISTICS (1) VCC± = ±15 V (unless otherwise noted) PARAMETER TA (2) TEST CONDITIONS VIO Input offset voltage VO = 0, RS = 50 Ω αVIO Temperature coefficient of input offset voltage VO = 0, RS = 50 Ω IIO Input offset current (3) VO = 0 MIN TYP MAX 3 6 25°C Full range UNIT mV 9 μV/°C Full range 18 25°C 5 100 pA 20 nA 30 200 pA 50 nA Full range 25°C IIB Input bias current (3) VICR Common-mode input voltage range VOM Maximum peak output voltage swing AVD Large-signal differential voltage amplification B1 Unity-gain bandwidth 25°C 3 ri Input resistance 25°C 1012 Ω CMRR Common-mode rejection ratio VIC = VICR(min), VO = 0, RS = 50 Ω 25°C 75 86 dB kSVR Supply-voltage rejection ratio (ΔVCC±/ΔVIO) VCC = ±15 V to ±9 V, VO = 0, RS = 50 Ω 25°C 80 86 dB ICC Supply current (per amplifier) VO = 0, No load 25°C 1.4 VO1/VO2 Crosstalk attenuation AVD = 100 25°C 120 VO = 0 Full range RL = 10 kΩ RL ≥ 10 kΩ ±11 25°C ±12 ±13.5 VO = ±10 V, RL ≥ 2 kΩ V ±12 Full range RL ≥ 2 kΩ (1) (2) (3) 25°C –12 to 15 V ±10 ±12 25°C 50 200 Full range 15 V/mV MHz 2.8 mA dB All characteristics are measured under open-loop conditions with zero common-mode voltage, unless otherwise specified. Full range for TA is –40°C to 85°C for I-suffix devices and –40°C to 125°C for Q-suffix devices. Input bias currents of an FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive, as shown in Figure 14. Pulse techniques must be used that maintain the junction temperature as close to the ambient temperature as possible. OPERATING CHARACTERISTICS VCC± = ±15 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN UNIT Slew rate at unity gain VI = 10 V, RL = 2 kΩ, CL = 100 pF, See Figure 1 tr Rise time VI = 20 mV, RL = 2 kΩ, CL = 100 pF, See Figure 1 0.05 μs Overshoot factor VI = 20 mV, RL = 2 kΩ, CL = 100 pF, See Figure 1 20 % Vn Equivalent input noise voltage RS = 20 Ω 18 nV/√Hz In Equivalent input noise current RS = 20 Ω, f = 1 kHz THD Total harmonic distortion VIrms = 6 V, f = 1 kHz, AVD = 1, RS ≤ 1 kΩ, RL ≥ 2 kΩ Submit Documentation Feedback f = 1 kHz f = 10 Hz to 10 kHz 13 MAX SR 4 8 TYP 4 V/μs μV 0.01 pA/√Hz 0.003 % Copyright © 2007, Texas Instruments Incorporated TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 PARAMETER MEASUREMENT INFORMATION OUT VI + CL = 100 pF RL = 2 kW Figure 1. 10 kW 1 kW - VI OUT + RL CL = 100 pF Figure 2. Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 5 TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 TYPICAL CHARACTERISTICS Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the devices. Table of Graphs FIGURE vs Frequency VOM Maximum peak output voltage 3, 4, 5 vs Free-air temperature 6 vs Load resistance 7 vs Supply voltage 8 vs Free-air temperature 9 vs Frequency 10 vs Free-air temperature 11 vs Free-air temperature 12 vs Supply voltage 13 AVD Large-signal differential voltage amplification PD Total power dissipation ICC Supply current IIB Input bias current vs Free-air temperature 14 Large-signal pulse response vs Time 15 VO Output voltage vs Elapsed time 16 CMRR Common-mode rejection ratio vs Free-air temperature 17 Vn Equivalent input noise voltage vs Frequency 18 THD Total harmonic distortion vs Frequency 19 MAXIMUM PEAK OUTPUT VOLTAGE vs FREQUENCY (See Figure 2) MAXIMUM PEAK OUTPUT VOLTAGE vs FREQUENCY (See Figure 2) ± 15 ± 15 VOM - Maxim um Peak Output Voltage - V ± 12.5 ± 10 VCC ± = ± 10 V ± 7.5 ±5 VCC ± = ± 5 V ± 2.5 0 100 RL = 2 kΩ TA = 25°C VCC ± = ± 15 V ± 12.5 ± 10 VCC ± = ± 10 V ± 7.5 ±5 VCC ± = ± 5 V ± 2.5 0 1k 10k 100k f - Frequenc y - Hz Figure 3. 6 VOM - Maxim um Peak Output Voltage - V RL = 10 kΩ TA = 25°C VCC ± = ± 15 V Submit Documentation Feedback 1M 10M 100 1k 10k 100k 1M 10M f - Frequenc y - Hz Figure 4. Copyright © 2007, Texas Instruments Incorporated TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 MAXIMUM PEAK OUTPUT VOLTAGE vs FREQUENCY (See Figure 2) MAXIMUM PEAK OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE (See Figure 2) ± 15 ± 12.5 VCC ± = ± 15 V RL = 2 kΩ TA = 25°C VOM - Maxim um Peak Output Voltage - V VOM - Maxim um Peak Output Voltage - V ± 15 ± 10 TA = - 55°C ± 7.5 ±5 TA = 125°C ± 2.5 0 10k 40k 100k 400k 1M 4M RL = 10 kW ± 12.5 RL = 2 kW ± 10 ± 7.5 ±5 ± 2.5 VCC ± = ± 15 V 0 -75 10M -50 f - Frequenc y - Hz 25 50 75 Figure 6. MAXIMUM PEAK OUTPUT VOLTAGE vs LOAD RESISTANCE (See Figure 2) MAXIMUM PEAK OUTPUT VOLTAGE vs SUPPLY VOLTAGE 100 125 14 16 ± 15 VCC ± = ± 15 V TA = 25°C VOM - Maxim um Peak Output Voltage - V VOM - Maxim um Peak Output Voltage - V 0 Figure 5. ± 15 ± 12.5 ± 10 ± 7.5 ±5 ± 2.5 0 0.1 -25 TA - Free-Air Temperature - °C 0.2 0.4 0.7 1 2 RL - Load Resistance - k Ω Figure 7. Copyright © 2007, Texas Instruments Incorporated 4 7 10 RL = 10 kΩ TA = 25°C ± 12.5 ± 10 ± 7.5 ±5 ± 2.5 0 0 2 4 6 8 10 12 | VCC ± | - Suppl y Voltage - V Figure 8. Submit Documentation Feedback 7 TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREE-AIR TEMPERATURE 1000 700 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREQUENCY 106 200 100 70 40 20 10 7 4 2 1 - 75 VCC ± = ± 15 V VO = ± 10 V RL = 2 kΩ - 50 - 25 104 103 90° Phase Shift (right scale) 101 1 25 50 75 100 45° 102 135° 1 0 0° Differential Voltage Amplification (left scale) Phase Shift 105 AVD - Lar ge-Signal Differential Voltage Amplification - V/mV AVD - Lar ge-Signal Differential Voltage Amplification - V/mV 400 VCC ± = ± 5 V to ± 15 V RL = 10 kΩ TA = 25°C 10 100 1k 10k 100k 1M 180° 10M f - Frequenc y - Hz 125 TA - Free-Air Temperature - °C Figure 9. Figure 10. POWER DISSIPATION vs FREE-AIR TEMPERATURE SUPPLY CURRENT vs FREE-AIR TEMPERATURE 2.0 250 VCC ± = ± 15 V No Signal No Load 200 175 150 125 100 75 50 - 50 - 25 0 25 50 75 TA - Free-Air Temperature - °C Figure 11. 8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 25 0 - 75 VCC ± = ±15 V No Signal No Load 1.8 I CC ± – Supply Current – mA PD - Total Power Dissipation - mW 225 Submit Documentation Feedback 100 125 0 –75 –50 –25 0 25 50 75 100 125 TA – Free-Air Temperature – °C Figure 12. Copyright © 2007, Texas Instruments Incorporated TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 SUPPLY CURRENT vs SUPPLY VOLTAGE INPUT BIAS CURRENT vs FREE-AIR TEMPERATURE 2.0 100 I IB - Input Bias Current - nA 1.6 I CC ± - Suppl y Current - mA V CC ± = ± 15 V TA = 25°C No Signal No Load 1.8 1.4 1.2 1.0 0.8 0.6 10 1 0.1 0.4 0.2 0 0 2 4 6 8 10 12 14 0.01 - 50 16 - 25 0 Figure 13. 50 75 100 125 Figure 14. OUTPUT VOLTAGE vs ELAPSED TIME (See Figure 1) VOLTAGE-FOLLOWER LARGE-SIGNAL PULSE RESPONSE 6 VCC ± = ± 15 V RL = 2 kΩ CL = 100 pF 4 TA = 25°C Output 28 24 VO - Output Voltage - mV Input and Output Voltages - V 25 TA - Free-Air Temperature - °C | VCC ± | - Suppl y Voltage - V 2 0 -2 Input 20 16 VCC ± = ± 15 V RL = 2 kΩ CL = 100 pF TA = 25°C 12 8 4 -4 0 -4 -6 0 0.5 1 1.5 2 t - Time - µs Figure 15. Copyright © 2007, Texas Instruments Incorporated 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1.0 1.2 t - Elapsed Time - µs Figure 16. Submit Documentation Feedback 9 TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 COMMON-MODE REJECTION RATIO vs FREE-AIR TEMPERATURE EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY 50 VCC ± = ±15 V RL = 10 kΩ Vn - Equilv alent Input Noise Voltage - nV/ Hz CMRR – Common-Mode Rejection Ratio – dB 89 88 87 86 85 84 83 –75 –50 –25 0 25 50 75 100 VCC ± = ± 15 V AVD = 10 RS = 20 Ω TA = 25°C 40 30 20 10 0 125 10 40 100 TA – Free-Air Temperature – °C 400 1 k 4 k 10 k 40 k 100 k f - Frequenc y - Hz Figure 17. Figure 18. TOTAL HARMONIC DISTORTION vs FREQUENCY 1 VCC ± = ± 15 V AVD = 1 VI(RMS) = 6 V TA = 25°C THD - Total Harmonic Distortion - % 0.4 0.1 0.04 0.01 0.004 0.001 10 400 1k 4k 10k 40k 100k f - Frequenc y - Hz Figure 19. 10 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 APPLICATION INFORMATION RF = 100 kW 15 V Output - 3.3 kW 1/2 TL082 + CF = 3.3 µF 1 kW –15 V 3.3 kW f= 9.1 kW 1 2p RF CF Figure 20. VCC+ - R2 C3 1/2 TL082 + Input R1 Output VCC– R1 = R2 = 2(R3) = 1.5 MW R3 C1 C2 C1 = C2 = C3 = 110 pF 2 1 = 1 kHz fo = 2p R1 C1 Figure 21. VCC + 1 MΩ TL082 VCC + Output A + + 1 µF TL082 VCC + - Input TL082 100 kΩ Output B + 100 kΩ VCC + 100 kΩ VCC + 100 kΩ - 100 µF TL082 Output C + Figure 22. Audio-Distribution Amplifier Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 11 TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER www.ti.com SLOS548 – SEPTEMBER 2007 1N4148 6 sin ωt - 15 V 18 kΩ (see Note A) 18 pF 18 pF 1 kΩ VCC + VCC+ - 88.4 kΩ - 1/2 TL082 1/2 TL082 + 88.4 kΩ VCC - 6 cos ωt + 18 pF 1 kΩ VCC - 15 V 1N4148 18 kΩ (see Note A) 88.4 kΩ A. These resistor values may be adjusted for a symmetrical output. Figure 23. 100-kHz Quadrature Oscillator 16 kΩ 16 kΩ 220 pF 220 pF 43 kΩ 43 kΩ 1/2 TL082 VCC + VCC + 43 kΩ 1/2 TL082 1/2 TL082 + + + 1.5 kΩ 30 kΩ 1.5 kΩ VCC - + - 1/2 TL082 220 pF VCC + - Input VCC + 220 pF 43 kΩ - 43 kΩ 30 kΩ - 43 kΩ Output B VCC - VCC - VCC - Output A Output A Output B 2 kHz/div Second-Order Bandpass Filter fo = 100 kHz, Q = 30, GAIN = 4 2 kHz/div Cascaded Bandpass Filter fo = 100 kHz, Q = 69, GAIN = 16 Figure 24. Positive-Feedback Bandpass Filter 12 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TL082IDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 TL082I TL082QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 TL082Q (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
TL082QDRQ1 价格&库存

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TL082QDRQ1
  •  国内价格
  • 1+2.96400
  • 10+2.73600
  • 30+2.69040

库存:0

TL082QDRQ1
    •  国内价格
    • 1000+2.64000

    库存:35802