TLC271AIP

TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 D D D D D D D D OFFSET N1 IN – IN + GND 1 8 2 7 3 6 4 5 BIAS SELECT VDD OUT OFFSET N2 FK PACKAGE (TOP VIEW) NC OFFSET N1 NC BIAS SELECT NC D D, JG, OR P PACKAGE (TOP VIEW) Input Offset Voltage Drift . . . Typically 0.1 µV/Month, Including the First 30 Days Wide Range of Supply Voltages Over Specified Temperature Range: 0°C to 70°C . . . 3 V to 16 V – 40°C to 85°C . . . 4 V to 16 V – 55°C to 125°C . . . 5 V to 16 V Single-Supply Operation Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix and I-Suffix Types) Low Noise . . . 25 nV/√Hz Typically at f = 1 kHz (High-Bias Mode) Output Voltage Range Includes Negative Rail High Input Impedance . . . 1012 Ω Typ ESD-Protection Circuitry Small-Outline Package Option Also Available in Tape and Reel Designed-In Latch-Up Immunity NC IN – NC IN + NC 4 3 2 1 20 19 18 5 17 6 16 7 15 8 14 9 10 11 12 13 NC VDD NC OUT NC NC GND NC OFFSET N2 NC D description The TLC271 operational amplifier combines a wide range of input offset voltage grades with low NC – No internal connection offset voltage drift and high input impedance. In addition, the TLC271 offers a bias-select mode that allows the user to select the best combination of power dissipation and ac performance for a particular application. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. AVAILABLE OPTIONS TA VIOmax AT 25°C 0°C to 70°C 2 mV 5 mV 10 mV – 40°C to 85°C – 55°C to 125°C PACKAGE SMALL OUTLINE (D) CHIP CARRIER (FK) CERAMIC DIP (JG) PLASTIC DIP (P) TLC271BCD TLC271ACD TLC271CD — — TLC271BCP TLC271ACP TLC271CP 2 mV 5 mV 10 mV TLC271BID TLC271AID TLC271ID — — TLC271BIP TLC271AIP TLC271IP 10 mV TLC271MD TLC271MFK TLC271MJG TLC271MP The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC271BCDR). Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. LinCMOS is a trademark of Texas Instruments. Copyright  2001, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 DEVICE FEATURES BIAS-SELECT MODE PARAMETER† MEDIUM PD SR 3375 525 50 3.6 0.4 0.03 Vn B1 25 32 68 0.5 0.09 MHz 170 480 V/mV 1.7 AVD 23 † Typical at VDD = 5 V, TA = 25°C LOW UNIT HIGH µW V/µs nV/√Hz description (continued) Using the bias-select option, these cost-effective devices can be programmed to span a wide range of applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV) low-offset version. The extremely high input impedance and low bias currents, in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs. In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail. A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications. The device inputs and output are designed to withstand – 100-mA surge currents without sustaining latch-up. The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of – 55°C to 125°C. bias-select feature The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels depending on the level of performance desired. The tradeoffs between bias levels involve ac performance and power dissipation (see Table 1). Table 1. Effect of Bias Selection on Performance TYPICAL PARAMETER VALUES C, VDD = 5 V TA = 25 25°C, MODE HIGH BIAS RL = 10 kΩ MEDIUM BIAS RL = 100 kΩ LOW BIAS RL = 1 MΩ UNIT PD SR Power dissipation 3.4 0.5 0.05 mW Slew rate 3.6 0.4 0.03 V/µs Vn B1 Equivalent input noise voltage at f = 1 kHz 25 32 68 Unity-gain bandwidth 1.7 0.5 0.09 φm AVD Phase margin 46° 40° 34° 23 170 480 2 Large-signal differential voltage amplification POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 nV/√Hz MHz V/mV TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 bias selection Bias selection is achieved by connecting the bias select pin to one of three voltage levels (see Figure 1). For medium-bias applications, it is recommended that the bias select pin be connected to the midpoint between the supply rails. This procedure is simple in split-supply applications, since this point is ground. In single-supply applications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use of large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However, large-value resistors used in conjunction with a large-value capacitor require significant time to charge up to the supply midpoint after the supply is switched on. A voltage other than the midpoint can be used if it is within the voltages specified in Figure 1. VDD Low To the Bias Select Pin 1 MΩ BIAS MODE Medium Medium VDD 1 V to VDD – 1 V High GND Low High 1 MΩ BIAS-SELECT VOLTAGE (single supply) 0.01 µF Figure 1. Bias Selection for Single-Supply Applications high-bias mode In the high-bias mode, the TLC271 series features low offset voltage drift, high input impedance, and low noise. Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation. Unity-gain bandwidth is typically greater than 1 MHz. medium-bias mode The TLC271 in the medium-bias mode features low offset voltage drift, high input impedance, and low noise. Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of that consumed by bipolar devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 low-bias mode In the low-bias mode, the TLC271 features low offset voltage drift, high input impedance, extremely low power consumption, and high differential voltage gain. ORDER OF CONTENTS TOPIC BIAS MODE schematic all absolute maximum ratings all recommended operating conditions all electrical characteristics operating characteristics typical characteristics high (Figures 2 – 33) electrical characteristics operating characteristics typical characteristics medium (Figures 34 – 65) electrical characteristics operating characteristics typical characteristics low (Figures 66 – 97) parameter measurement information all application information all equivalent schematic VDD P3 P12 P9A R6 P4 P2 P1 P5 P9B P11 R2 IN – R1 P10 N5 IN + N11 P6A C1 R5 P6B P7B P7A P8 N12 N3 N9 N6 N7 N1 N2 N4 R3 D1 D2 N13 R7 R4 OFFSET OFFSET N1 N2 4 N10 OUT POST OFFICE BOX 655303 GND • DALLAS, TEXAS 75265 BIAS SELECT TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to VDD Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 5 mA Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 mA Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating free-air temperature, TA: C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85°C M suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package . . . . . . . . . . . . . . . . . 260°C Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package . . . . . . . . . . . . . . . . . . . . 300°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect to network ground. 2. Differential voltages are at IN+ with respect to IN –. 3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded (see application section). DISSIPATION RATING TABLE PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW P 1000 mW 8.0 mW/°C 640 mW 520 mW 200 mW recommended operating conditions Supply voltage, VDD Common mode input voltage, Common-mode voltage VIC VDD = 5 V VDD = 10 V Operating free-air temperature, TA POST OFFICE BOX 655303 C SUFFIX I SUFFIX M SUFFIX MIN MIN MAX MIN MAX MAX 3 16 4 16 5 16 – 0.2 3.5 – 0.2 3.5 0 3.5 – 0.2 8.5 – 0.2 8.5 0 8.5 0 70 – 40 85 – 55 125 • DALLAS, TEXAS 75265 UNIT V V °C 5 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 HIGH-BIAS MODE electrical characteristics at specified free-air temperature (unless otherwise noted) TLC271C, TLC271AC, TLC271BC TEST CONDITIONS PARAMETER TLC271C VIO Input offset voltage TLC271AC VO = 1 1.4 4V V, VIC = 0 V,, RS = 50 Ω, RL = 10 kΩ TLC271BC TA† VDD = 5 V MIN TYP MAX VDD = 10 V MIN TYP MAX 25°C 1.1 1.1 Full range 10 12 25°C 0.9 Full range 0.34 Full range 5 0.9 2 0.39 3 αVIO IIO Input offset current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.1 60 0.1 60 70°C 7 300 7 300 IIB Input bias current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.6 60 0.7 60 70°C 40 600 50 600 VOH VOL AVD CMRR kSVR II(SEL) IDD Common mode input voltage Common-mode range (see Note 5) High-level output voltage Low-level output voltage L i l diff ti l Large-signal differential voltage am lification amplification Common-mode rejection ratio 25°C – 0.2 to 4 Full range – 0.2 to 3.5 VID = 100 mV, V RL = 10 kΩ VID = –100 100 mV, V IOL = 0 kΩ RL = 10 kΩ, See Note 6 VIC = VICRmin – 0.2 to 9 – 0.3 to 9.2 25°C 3.2 3.8 8 8.5 0°C 3 3.8 7.8 8.5 70°C 3 3.8 7.8 8.4 V 25°C 0 50 0 50 0°C 0 50 0 50 70°C 0 50 0 50 25°C 5 23 10 36 0°C 4 27 7.5 42 70°C 4 20 7.5 32 25°C 65 80 65 85 0°C 60 84 60 88 70°C 60 85 60 88 25°C 65 95 65 95 0°C 60 94 60 94 70°C 60 96 60 96 dB Input current (BIAS SELECT) VI(SEL) = 0 25°C – 1.4 VO = VDD /2, VIC = VDD /2, N lload No d 25°C 675 1600 950 2000 0°C 775 1800 1125 2200 70°C 575 1300 750 1700 • DALLAS, TEXAS 75265 mV V/mV VDD = 5 V to t 10 V VO = 1 1.4 4V POST OFFICE BOX 655303 pA V Supply-voltage S l lt rejection j ti ratio ti (∆VDD /∆VIO) Supply current pA V – 0.2 to 8.5 dB µA – 1.9 † Full range is 0°C to 70°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. 6 µV/°C 2 – 0.3 to 4.2 mV 2 Average temperature coefficient of input offset voltage VICR 1.8 5 6.5 3 25°C to 70°C 10 12 6.5 25°C UNIT µA TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 HIGH-BIAS MODE electrical characteristics at specified free-air temperature (unless otherwise noted) TLC271I, TLC271AI, TLC271BI TEST CONDITIONS PARAMETER TLC271I VIO Input offset voltage TLC271AI VO = 1 1.4 4V V, VIC = 0 V,, RS = 50 Ω, RL = 10 kΩ TLC271BI TA† VDD = 5 V MIN TYP MAX VDD = 10 V MIN TYP MAX 25°C 1.1 1.1 Full range 10 13 25°C 0.9 Full range 0.34 Full range 5 0.9 2 0.39 3.5 αVIO IIO Input offset current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.1 60 0.1 60 85°C 24 1000 26 1000 IIB Input bias current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.6 60 0.7 60 85°C 200 2000 220 2000 VOH VOL AVD CMRR kSVR II(SEL) IDD 25°C – 0.2 to 4 Full range – 0.2 to 3.5 Common-mode input voltage range (see Note 5) High-level output voltage Low-level output voltage L i l diff ti l Large-signal differential voltage am lification amplification Common-mode rejection ratio VID = 100 mV, V RL = 10 kΩ VID = –100 100 mV, V IOL = 0 kΩ RL = 10 kΩ, See Note 6 VIC = VICRmin µV/°C 2 – 0.3 to 4.2 – 0.2 to 9 – 0.3 to 9.2 pA pA V – 0.2 to 8.5 V 25°C 3.2 3.8 8 8.5 – 40°C 3 3.8 7.8 8.5 85°C 3 3.8 7.8 8.5 V 25°C 0 50 0 50 – 40°C 0 50 0 50 85°C 0 50 0 50 25°C 5 23 10 36 – 40°C 3.5 32 7 46 85°C 3.5 19 7 31 25°C 65 80 65 85 – 40°C 60 81 60 87 85°C 60 86 60 88 25°C 65 95 65 95 – 40°C 60 92 60 92 85°C 60 96 60 96 mV V/mV dB Supply-voltage S l lt rejection j ti ratio ti (∆VDD /∆VIO) VDD = 5 V to t 10 V VO = 1 1.4 4V Input current (BIAS SELECT) VI(SEL) = 0 25°C – 1.4 VO = VDD /2, VIC = VDD /2, N lload No d 25°C 675 1600 950 2000 – 40°C 950 2200 1375 2500 85°C 525 1200 725 1600 Supply current mV 2 Average temperature coefficient of input offset voltage VICR 1.8 5 7 3.5 25°C to 85°C 10 13 7 25°C UNIT dB µA – 1.9 µA † Full range is – 40°C to 85°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 HIGH-BIAS MODE electrical characteristics at specified free-air temperature (unless otherwise noted) TLC271M PARAMETER VIO Input offset voltage αVIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) IIB VICR VOH VOL AVD CMRR Input bias current (see Note 4) TEST CONDITIONS VO = 1.4 V, VIC = 0 V,, RS = 50 Ω, RL = 10 kΩ TA† VDD = 5 V MIN TYP MAX VDD = 10 V MIN TYP MAX 25°C 11 1.1 11 1.1 Low-level output voltage L i l diff ti l Large-signal differential voltage am lification amplification Common-mode rejection ratio 10 mV Full range VO = VDD /2,, VIC = VDD /2 VO = VDD /2,, VIC = VDD /2 12 12 25°C to 125°C 2.1 25°C 0.1 60 0.1 60 pA 125°C 1.4 15 1.8 15 nA 25°C 0.6 60 0.7 60 pA 9 35 10 35 nA 125°C 25°C 0 to 4 Full range 0 to 3.5 Common-mode input voltage g range (see Note 5) High-level output voltage 10 µV/°C 2.2 – 0.3 to 4.2 0 to 9 – 0.3 to 9.2 V 0 to 8.5 V 25°C 3.2 3.8 8 8.5 VID = 100 mV, V RL = 10 kΩ – 55°C 3 3.8 7.8 8.5 125°C 3 3.8 7.8 8.4 25°C 0 50 0 50 VID = –100 100 mV, V IOL = 0 – 55°C 0 50 0 50 125°C 0 50 0 50 25°C 5 23 10 36 kΩ RL = 10 kΩ, See Note 6 – 55°C 3.5 35 7 50 125°C 3.5 16 7 27 25°C 65 80 65 85 – 55°C 60 81 60 87 125°C 60 84 60 86 25°C 65 95 65 95 – 55°C 60 90 60 90 125°C 60 97 60 VIC = VICRmin kSVR Supply-voltage S l lt rejection j ti ratio ti (∆VDD /∆VIO) VDD = 5 V to t 10 V VO = 1 1.4 4V II(SEL) Input current (BIAS SELECT) VI(SEL) = 0 IDD Supply current VO = VDD /2, VIC = VDD /2, N lload No d 25°C – 1.4 V dB dB 97 µA – 1.9 25°C 675 1600 950 2000 1000 2500 1475 3000 125°C 475 1100 625 † Full range is – 55°C to 125°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. 1400 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 mV V/mV – 55°C 8 UNIT µA TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 HIGH-BIAS MODE operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC271C, TLC271AC, TLC271BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 kΩ, CL = 20 pF pF, See Figure 98 VI(PP) ( ) = 2.5 V Vn Equivalent input noise voltage f = 1 kHz,, See Figure 99 RS = 20 Ω,, BOM Maximum output-swing bandwidth VO = VOH , RL = 10 kΩ, kΩ CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 CL = 20 pF, F B1 φm Unity-gain bandwidth Phase margin VI = 10 mV, mV CL = 20 pF, F, f = B1, See Figure 100 TYP 25°C 3.6 0°C 4 70°C 3 25°C 2.9 0°C 3.1 70°C 2.5 25°C 25 25°C 320 0°C 340 70°C 260 25°C 1.7 0°C 2 70°C 1.3 25°C 46° 0°C 47° 70°C 44° UNIT MAX V/µs nV/√Hz kHz MHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC271C, TLC271AC, TLC271BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 kΩ, CL = 20 pF pF, See Figure 98 VI(PP) ( ) = 5.5 V Vn Equivalent input noise voltage f = 1 kHz,, See Figure 99 RS = 20 Ω,, BOM Maximum output-swing bandwidth VO = VOH, RL = 10 kΩ, kΩ CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 CL = 20 pF, F B1 φm Unity-gain bandwidth Phase margin f = B1, CL = 20 pF, F, POST OFFICE BOX 655303 VI = 10 mV, mV See Figure 100 • DALLAS, TEXAS 75265 TYP 25°C 5.3 0°C 5.9 70°C 4.3 25°C 4.6 0°C 5.1 70°C 3.8 25°C 25 25°C 200 0°C 220 70°C 140 25°C 2.2 0°C 2.5 70°C 1.8 25°C 49° 0°C 50° 70°C 46° UNIT MAX V/µs nV/√Hz kHz MHz 9 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 HIGH-BIAS MODE operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC271I, TLC271AI, TLC271BI MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 kΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 2.5 V Vn Equivalent input noise voltage f = 1 kHz,, See Figure 99 RS = 20 Ω,, BOM Maximum output-swing bandwidth VO = VOH, RL = 10 kΩ, kΩ CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 CL = 20 pF, F B1 φm Unity-gain bandwidth Phase margin VI = 10 mV, mV CL = 20 pF F, f = B1, See Figure 100 TYP 25°C 3.6 – 40°C 4.5 85°C 2.8 25°C 2.9 – 40°C 3.5 85°C 2.3 25°C 25 25°C 320 – 40°C 380 85°C 250 25°C 1.7 – 40°C 2.6 85°C 1.2 25°C 46° – 40°C 49° 85°C 43° UNIT MAX V/µs nV/√H nV/√Hz kHz MHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC271I, TLC271AI, TLC271BI MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 kΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 5.5 V Vn Equivalent input noise voltage f = 1 kHz,, See Figure 99 RS = 20 Ω,, BOM Maximum output-swing bandwidth VO = VOH, RL = 10 kΩ, kΩ CL = 20 pF, F See Figure 98 B1 φm 10 Unity-gain bandwidth Phase margin VI = 10 mV, V See Figure 100 VI = 10 mV, mV CL = 20 pF F, POST OFFICE BOX 655303 CL = 20 pF, F ff= B1, See Figure 100 • DALLAS, TEXAS 75265 TYP 25°C 5.3 – 40°C 6.8 85°C 4 25°C 4.6 – 40°C 5.8 85°C 3.5 25°C 25 25°C 200 – 40°C 260 85°C 130 25°C 2.2 – 40°C 3.1 85°C 1.7 25°C 49° – 40°C 52° 85°C 46° UNIT MAX V/µs nV/√Hz kHz MHz TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 HIGH-BIAS MODE operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 kΩ, CL = 20 pF pF, See Figure 98 VI(PP) ( ) = 2.5 V Vn Equivalent input noise voltage f = 1 kHz,, See Figure 99 RS = 20 Ω,, BOM Maximum output-swing bandwidth VO = VOH, RL = 10 kΩ, kΩ CL = 20 pF, F See Figure 98 B1 φm Unity-gain bandwidth Phase margin VI = 10 mV, V See Figure 100 mV VI = 10 mV, CL = 20 pF, F, CL = 20 pF, F f = B1, See Figure 100 TA TLC271M MIN TYP 25°C 3.6 – 55°C 4.7 125°C 2.3 25°C 2.9 – 55°C 3.7 125°C 2 25°C 25 25°C 320 – 55°C 400 125°C 230 25°C 1.7 – 55°C 2.9 125°C 1.1 25°C 46° – 55°C 49° 125°C 41° MAX UNIT V/µs nV/√H nV/√Hz kHz MHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 kΩ, CL = 20 pF pF, See Figure 98 VI(PP) ( ) = 5.5 V Vn Equivalent input noise voltage f = 1 kHz,, See Figure 99 RS = 20 Ω,, BOM Maximum output-swing bandwidth VO = VOH, RL = 10 kΩ, kΩ CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 CL = 20 pF, F B1 φm Unity-gain bandwidth Phase margin f = B1, CL = 20 pF, F, POST OFFICE BOX 655303 mV VI = 10 mV, See Figure 100 • DALLAS, TEXAS 75265 TA TLC271M MIN TYP 25°C 5.3 – 55°C 7.1 125°C 3.1 25°C 4.6 – 55°C 6.1 125°C 2.7 25°C 25 25°C 200 – 55°C 280 125°C 110 25°C 2.2 – 55°C 3.4 125°C 1.6 25°C 49° – 55°C 52° 125°C 44° MAX UNIT V/µs nV/√H nV/√Hz kHz MHz 11 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (HIGH-BIAS MODE) Table of Graphs FIGURE 12 VIO αVIO Input offset voltage Distribution 2, 3 Temperature coefficient Distribution 4, 5 VOH High-level g output voltage g High-level output vs High level out ut current vs Supply y voltage g vs Free-air temperature 6, 7 8 9 VOL Low level output voltage Low-level vs Common-mode Common mode input in ut voltage vs Differential input voltage g vs Free-air temperature vs Low-level output current 10, 11 12 13 14, 15 AVD Large-signal g g differential voltage g amplification vs Supply Su ly voltage vs Free-air temperature vs Frequency 16 17 28, 29 IIB IIO Input bias current vs Free-air temperature 18 Input offset current vs Free-air temperature 18 VIC Common-mode input voltage vs Supply voltage 19 IDD Supply current vs Supplyy voltage g vs Free-air temperature 20 21 SR Slew rate vs Supply y voltage g vs Free-air temperature 22 23 Bias-select current vs Supply voltage 24 VO(PP) Maximum peak-to-peak output voltage vs Frequency 25 B1 Unity gain bandwidth Unity-gain vs Free-air temperature vs Supply voltage 26 27 AVD Large-signal differential voltage amplification vs Frequency φm Phase margin g vs Supply Su ly voltage vs Free-air temperature vs Capacitive load Vn Equivalent input noise voltage vs Frequency 33 Phase shift vs Frequency 28, 29 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 28, 29 30 31 32 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)† DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE Percentage of Units – % 50 ÎÎÎÎÎÎÎÎÎÎÎÎ 60 ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ 753 Amplifiers Tested From 6 Wafer Lots VDD = 10 V 753 Amplifiers Tested From 6 Wafer Lots VDD = 5 V TA = 25°C P Package 50 Percentage of Units – % 60 DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE 40 30 20 TA = 25°C P Package 40 30 20 10 10 0 1 2 3 –5 –4 –3 –2 –1 0 VIO – Input Offset Voltage – mV 4 0 –5 –4 –3 –2 –1 0 1 2 3 VIO – Input Offset Voltage – mV 5 DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT 40 DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ 324 Amplifiers Tested From 8 Wafer Lots VDD = 5 V TA = 25°C to 125°C P Package Outliers: (1) 20.5 µV/°C ÎÎÎÎÎ 60 50 Percentage of Units – % Percentage of Units – % 50 5 Figure 3 Figure 2 60 4 30 20 10 40 ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ 324 Amplifiers Tested From 8 Wafer lots VDD = 10 V TA = 25°C to 125°C P Package Outliers: (1) 21.2 µV/°C ÎÎÎÎÎ 30 20 10 0 – 10 – 8 – 6 – 4 – 2 0 2 4 6 8 αVIO – Temperature Coefficient – µV/°C 10 0 – 10 – 8 – 6 – 4 – 2 0 2 4 6 8 αVIO – Temperature Coefficient – µV/°C Figure 4 10 Figure 5 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 13 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)† HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT 16 VID = 100 mV TA = 25°C VOH VOH – High-Level Output Voltage – V VOH VOH – High-Level Output Voltage – V 5 4 VDD = 5 V 3 VDD = 4 V VDD = 3 V 2 ÁÁÁ ÁÁÁ ÁÁÁ VDD = 16 V 0 –2 –4 –6 –8 IOH – High-Level Output Current – mA 10 ÎÎÎÎÎ ÎÎÎÎÎ 8 VDD = 10 V 6 4 2 0 – 10 0 –5 – 15 – 20 – 25 – 30 – 35 – 40 Figure 7 HIGH-LEVEL OUTPUT VOLTAGE vs SUPPLY VOLTAGE HIGH-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 16 VDD – 1.6 VID = 100 mV RL = 10 kΩ TA = 25°C 14 VOH – High-Level Output Voltage – V VOH VOH – High-Level Output Voltage – V VOH – 10 IOH – High-Level Output Current – mA Figure 6 12 10 ÁÁ ÁÁ VID = 100 mV TA = 25°C 12 ÁÁ ÁÁ ÁÁ 1 0 14 8 6 – 1.7 VDD = 5 V IOH = – 5 mA VID = 100 mA – 1.8 – 1.9 –2 VDD = 10 V – 2.1 ÁÁ ÁÁ 4 2 0 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 – 2.2 – 2.3 – 2.4 – 75 – 50 – 25 0 20 50 75 100 TA – Free-Air Temperature – °C Figure 8 Figure 9 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)† LOW-LEVEL OUTPUT VOLTAGE vs COMMON-MODE INPUT VOLTAGE 500 VDD = 5 V IOL = 5 mA TA = 25°C 650 VOL VOL – Low-Level Output Voltage – mV VOL VOL– Low-Level Output Voltage – mV 700 LOW-LEVEL OUTPUT VOLTAGE vs COMMON-MODE INPUT VOLTAGE 600 ÎÎÎÎÎÎ ÎÎÎÎÎÎ 550 VID = – 100 mV 500 450 ÁÁ ÁÁ 450 400 VID = – 100 mV VID = – 1 V 350 VID = – 2.5 V ÁÁÁ ÁÁÁ 400 VID = – 1 V 350 300 0 VDD = 10 V IOL = 5 mA TA = 25°C 1 2 3 VIC – Common-Mode Input Voltage – V 300 250 4 0 1 3 5 7 9 2 4 6 8 VIC – Common-Mode Input Voltage – V Figure 11 Figure 10 LOW-LEVEL OUTPUT VOLTAGE vs DIFFERENTIAL INPUT VOLTAGE LOW-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 900 IOL = 5 mA VIC = VID/2 TA = 25°C 700 VOL VOL – Low-Level Output Voltage – mV VOL VOL– Low-Level Output Voltage – mV 800 600 ÎÎÎÎ ÎÎÎÎ 500 VDD = 5 V 400 300 ÁÁ ÁÁ 10 VDD = 10 V ÁÁ ÁÁ 200 100 0 0 –1 – 2 – 3 – 4 – 5 – 6 – 7 – 8 – 9 – 10 VID – Differential Input Voltage – V 800 IOL = 5 mA VID = – 1 V VIC = 0.5 V 700 ÎÎÎÎ VDD = 5 V 600 500 ÎÎÎÎ ÎÎÎÎ 400 VDD = 10 V 300 200 100 0 – 75 – 50 Figure 12 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C 125 Figure 13 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 15 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)† LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT 3 VID = – 1 V VIC = 0.5 V TA = 25°C 0.9 0.8 VOL VOL – Low-Level Output Voltage – mV VOL VOL– Low-Level Output Voltage – mV 1 ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ VDD = 5 V 0.7 VDD = 4 V 0.6 VDD = 3 V 0.5 0.4 ÁÁ ÁÁ ÁÁ 0.3 ÁÁ ÁÁ 0.2 0.1 0 0 1 2 3 4 5 6 7 IOL – Low-Level Output Current – mA 8 VID = –1 V VIC = 0.5 V TA = 25°C 2.5 2 VDD = 10 V 1.5 1 0.5 0 0 5 10 15 20 25 IOL – Low-Level Output Current – mA LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREE-AIR TEMPERATURE LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs SUPPLY VOLTAGE AVD AVD– Large-Signal Differential Voltage Amplification – V/mV ÁÁ ÁÁ ÁÁ 50 40 ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ 0°C 85°C 30 125°C ÁÁ ÁÁ ÁÁ 20 10 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 RL = 10 kΩ 45 25°C 0 ÎÎÎÎÎ ÎÎÎÎÎ 50 TA = – 55°C AVD AVD– Large-Signal Differential Voltage Amplification – V/mV ÎÎÎÎ ÎÎÎÎ RL = 10 kΩ 16 40 VDD = 10 V 35 30 25 20 VDD = 5 V 15 10 5 0 – 75 – 50 Figure 16 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C Figure 17 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 16 30 Figure 15 Figure 14 60 VDD = 16 V POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)† COMMON-MODE INPUT VOLTAGE (POSITIVE LIMIT) vs SUPPLY VOLTAGE INPUT BIAS CURRENT AND INPUT OFFSET CURRENT vs FREE-AIR TEMPERATURE IIB I IO – Input Bias and IIB and IIO Input Offset Currents – nA VDD = 10 V VIC = 5 V See Note A 1000 100 16 ÎÎ ÎÎ IIB 10 V IC – Common-Mode Input Voltage – V ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ 10000 ÎÎ ÎÎ IIO 1 TA = 25°C 14 12 10 8 6 4 2 0 0.1 25 125 45 65 85 105 TA – Free-Air Temperature – °C NOTE A: The typical values of input bias current and input offset current below 5 pA were determined mathematically. 0 2 4 6 8 10 12 VDD – Supply Voltage – V SUPPLY CURRENT vs FREE-AIR TEMPERATURE SUPPLY CURRENT vs SUPPLY VOLTAGE ÎÎÎÎ ÎÎÎÎ 2 IDD I DD – Supply Current – mA TA =– 55°C ÎÎÎ 0°C 1.5 25°C ÁÁÁ ÁÁÁ ÁÁÁ 1 70°C 125°C 0.5 ÁÁ ÁÁ ÁÁ 0 0 2 ÎÎÎÎÎ ÎÎÎÎÎ VO = VDD /2 No Load 4 6 8 10 12 VDD – Supply Voltage – V 14 IDD I DD – Supply Current – mA VO = VDD /2 No Load 2 16 Figure 19 Figure 18 2.5 14 16 1.5 VDD = 10 V 1 VDD = 5 V 0.5 0 – 75 – 50 Figure 20 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C 125 Figure 21 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 17 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)† SLEW RATE vs FREE-AIR TEMPERATURE SLEW RATE vs SUPPLY VOLTAGE 8 6 7 SR – Slew Rate – V/ µus s SR – Slew Rate – V/ µus s 7 5 4 3 5 4 1 1 2 4 6 8 10 12 VDD – Supply Voltage – V 14 VDD = 5 V VI(PP) = 1 V – 50 MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE vs FREQUENCY TA = 25°C VI(SEL) = 0 Bias-Select Current – ua µA – 2.4 – 2.1 – 1.8 – 1.5 – 1.2 – 0.9 – 0.6 – 0.3 0 4 6 8 10 12 VDD – Supply Voltage – V 14 16 VO(PP) – Maximum Peak-to-Peak Output Voltage – V – 3 2 125 Figure 23 BIAS-SELECT CURRENT vs SUPPLY VOLTAGE 0 ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ – 25 0 25 50 75 100 TA – Free-Air Temperature – °C Figure 22 – 2.7 ÎÎÎÎ VDD = 10 V VI(PP) = 1 V VDD = 5 V VI(PP) = 2.5 V 0 – 75 16 AV = 1 RL = 10 kΩ CL = 20 pF See Figure 99 3 2 0 VDD = 10 V VI(PP) = 5.5 V 6 2 0 ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ 8 AV = 1 VI(PP) = 1 V RL = 10 kΩ CL = 20 pF TA = 25°C See Figure 98 ÎÎÎÎ ÎÎÎÎ 10 VDD = 10 V 9 8 7 6 ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ 5 ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ TA = 125°C TA = 25°C TA = 55°C VDD = 5 V 4 3 RL = 10 kΩ See Figure 98 2 1 0 10 Figure 24 100 1000 f – Frequency – kHz 10000 Figure 25 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)† UNITY-GAIN BANDWIDTH vs FREE-AIR TEMPERATURE 2.5 VDD = 5 V VI = 10 mV CL = 20 pF See Figure 100 B1 B1 – Unity-Gain Bandwidth – MHz B1 B1 – Unity-Gain Bandwidth – MHz 3 UNITY-GAIN BANDWIDTH vs SUPPLY VOLTAGE 2.5 2 1.5 1 – 75 – 50 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C VI = 10 mV CL = 20 pF TA = 25°C See Figure 100 2 1.5 1 125 0 2 4 6 8 10 12 VDD – Supply Voltage – V Figure 26 14 16 Figure 27 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY 107 ÁÁ ÁÁ 105 0° 104 30° AVD 103 60° 102 90° Phase Shift AVD AVD– Large-Signal Differential Voltage Amplification 106 VDD = 5 V RL = 10 kΩ TA = 25°C Phase Shift 101 120° 1 150° 0.1 10 100 1k 10 k 100 k f – Frequency – Hz 1M 180° 10 M Figure 28 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 19 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)† LARGE-SCALE DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY 107 VDD = 10 V RL = 10 kΩ TA = 25°C ÁÁ ÁÁ 105 0° 104 30° AVD 103 60° 102 90° Phase Shift AVD AVD– Large-Signal Differential Voltage Amplification 106 Phase Shift 101 120° 1 150° 0.1 100 10 1k 10 k 100 k f – Frequency – Hz 1M 180° 10 M Figure 29 PHASE MARGIN vs SUPPLY VOLTAGE PHASE MARGIN vs FREE-AIR TEMPERATURE 53° 50° VDD = 5 V VI = 10 mV CL = 20 pF See Figure 100 52° 48° φm m – Phase Margin φm m – Phase Margin 51° 50° 49° ÁÁ ÁÁ ÁÁ ÁÁ 48° VI = 10 mV CL = 20 pF TA = 25°C See Figure 100 47° 46° 45° 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 46° 44° 42° 40° – 75 – 50 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C Figure 31 Figure 30 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 20 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)† 50° VDD = 5 mV VI = 10 mV TA = 25°C See Figure 100 φm m – Phase Margin 45° ÁÁ ÁÁ ÁÁ ÁÁ 40° ÁÁ ÁÁ 35° 30° 25° 0 20 40 60 80 CL – Capacitive Load – pF 100 VN nV/ Hz V n– Equivalent Input Noise Voltage – nV/Hz PHASE MARGIN vs CAPACITIVE LOAD EQUIVALENT NOISE VOLTAGE vs FREQUENCY ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ 400 VDD = 5 V RS = 20 Ω TA = 25°C See Figure 99 350 300 250 200 150 100 50 0 1 Figure 32 10 100 f – Frequency – Hz 1000 Figure 33 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 21 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 MEDIUM-BIAS MODE electrical characteristics at specified free-air temperature (unless otherwise noted) TLC271C, TLC271AC, TLC271BC PARAMETER TEST CONDITIONS TLC271C VIO Input offset voltage TLC271AC VO = 1 1.4 4V V, VIC = 0 RS = 50 Ω, RI = 100 kΩ TLC271BC TA† VDD = 5 V MIN TYP MAX VDD = 10 V MIN TYP MAX 25°C 1.1 1.1 Full range 10 12 25°C 0.9 Full range 0.25 Full range 5 0.9 2 0.26 3 αVIO IIO Input offset current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.1 60 0.1 60 70°C 7 300 7 300 IIB Input bias current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.6 60 0.7 60 70°C 40 600 50 600 VOH VOL AVD CMRR 25°C – 0.2 to 4 Full range – 0.2 to 3.5 Common-mode input voltage range (see Note 5) High-level output voltage Low-level output voltage L i l diff ti l Large-signal differential voltage am lification amplification Common-mode rejection ratio VID = 100 mV, V RL = 100 kΩ VID = –100 100 mV, V IOL = 0 kΩ RL = 100 kΩ, See Note 6 VIC = VICRmin µV/°C 2.1 – 0.3 to 4.2 – 0.2 to 9 –0.3 to 9.2 3.2 3.9 8 8.7 0°C 3 3.9 7.8 8.7 70°C 3 4 7.8 8.7 V 25°C 0 50 0 50 0°C 0 50 0 50 0 50 0 50 25°C 25 170 25 275 0°C 15 200 15 320 70°C 15 140 15 230 25°C 65 91 65 94 0°C 60 91 60 94 70°C 60 92 60 94 25°C 70 93 70 93 0°C 60 92 60 92 70°C 60 94 60 94 dB II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD /2 25°C – 130 105 280 143 300 Supply current VO = VDD /2, VIC = VDD /2, No load 25°C IDD 0°C 125 320 173 400 70°C 85 220 110 280 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 dB – 160 † Full range is 0°C to 70°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. mV V/mV VDD = 5 V to t 10 V VO = 1 1.4 4V 22 pA V Supply-voltage S l lt rejection j ti ratio ti (∆VDD /∆VIO) kSVR pA V – 0.2 to 8.5 25°C 70°C mV 2 Average temperature coefficient of input offset voltage VICR 1.7 5 6.5 3 25°C to 70°C 10 12 6.5 25°C UNIT nA µA TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 MEDIUM-BIAS MODE electrical characteristics at specified free-air temperature (unless otherwise noted) TLC271I, TLC271AI, TLC271BI TEST CONDITIONS PARAMETER TLC271I VIO Input offset voltage TLC271AI VO = 1 1.4 4V V, VIC = 0 V,, RS = 50 Ω, RL = 100 kΩ TLC271BI TA† VDD = 5 V MIN TYP MAX VDD = 10 V MIN TYP MAX 25°C 1.1 1.1 Full range 10 13 25°C 0.9 Full range 0.25 Full range 5 0.9 2 0.26 3.5 αVIO IIO Input offset current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.1 60 0.1 60 85°C 24 1000 26 1000 IIB Input bias current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.6 60 0.7 60 85°C 200 2000 220 2000 VOH VOL AVD CMRR – 0.2 to 4 Full range – 0.2 to 3.5 Common-mode input voltage range (see Note 5) High-level output voltage Low-level output voltage L i l diff ti l Large-signal differential voltage am lification amplification Common-mode rejection ratio VID = 100 mV, V RL = 100 kΩ VID = –100 100 mV, V IOL = 0 kΩ RL = 100 kΩ, See Note 6 VIC = VICRmin Supply-voltage S l lt rejection j ti ratio ti (∆VDD /∆VIO) VDD = 5 V to t 10 V VO = 1 1.4 4V II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD /2 IDD Supply current VO = VDD /2, VIC = VDD /2, No load kSVR 25°C µV/°C 2.1 – 0.3 to 4.2 – 0.2 to 9 – 0.3 to 9.2 25°C 3.2 3.9 8 8.7 3 3.9 7.8 8.7 85°C 3 4 7.8 8.7 V 25°C 0 50 0 50 – 40°C 0 50 0 50 0 50 0 50 25°C 25 170 25 275 – 40°C 15 270 15 390 85°C 15 130 15 220 25°C 65 91 65 94 – 40°C 60 90 60 93 85°C 60 90 60 94 25°C 70 93 70 93 – 40°C 60 91 60 91 85°C 60 94 60 94 – 130 pA V – 40°C 25°C pA V – 0.2 to 8.5 85°C mV 2 Average temperature coefficient of input offset voltage VICR 1.7 5 7 3.5 25°C to 85°C 10 13 7 25°C UNIT mV V/mV dB dB – 160 nA 25°C 105 280 143 300 – 40°C 158 400 225 450 85°C 80 200 103 260 µA † Full range is – 40°C to 85°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 23 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 MEDIUM-BIAS MODE electrical characteristics at specified free-air temperature (unless otherwise noted) TLC271M PARAMETER VIO Input offset voltage TEST CONDITIONS VO = 1.4 V, VIC = 0 V, RS = 50 Ω, RL = 100 kΩ αVIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) VO = VDD /2,, VIC = VDD /2 IIB Input bias current (see Note 4) VO = VDD /2,, VIC = VDD /2 VICR VOH VOL AVD CMRR TA† VDD = 5 V MIN TYP MAX VDD = 10 V MIN TYP MAX UNIT 25°C 1.1 1.1 mV Full range Low-level output voltage Large-signal L i l diff differential ti l voltage am amplification lification Common-mode rejection ratio 12 10 12 25°C to 125°C 1.7 25°C 0.1 60 0.1 60 pA 125°C 1.4 15 1.8 15 nA 25°C 0.6 60 0.7 60 pA 125°C 9 35 10 35 nA 25°C 0 to 4 Full range 0 to 3.5 Common-mode input voltage range (see Note 5) High-level output voltage 10 µV/°C 2.1 – 0.3 to 4.2 0 to 9 – 0.3 to 9.2 V 0 to 8.5 V 25°C 3.2 3.9 8 8.7 VID = 100 mV, V RL = 100 kΩ – 55°C 3 3.9 7.8 8.6 125°C 3 4 7.8 8.6 25°C 0 50 0 50 VID = –100 100 mV, V IOL = 0 – 55°C 0 50 0 50 125°C 0 50 0 50 25°C 25 170 25 275 RL = 10 kΩ See Note 6 – 55°C 15 290 15 420 125°C 15 120 15 190 25°C 65 91 65 94 – 55°C 60 89 60 93 125°C 60 91 60 93 25°C 70 93 70 93 – 55°C 60 91 60 91 125°C 60 94 60 VIC = VICRmin V V/mV dB kSVR S l lt j ti ratio ti Supply-voltage rejection (∆VDD /∆VIO) t 10 V VDD = 5 V to VO = 1 1.4 4V II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD /2 25°C – 130 VO = VDD /2, VIC = VDD /2, No load 25°C 105 280 143 300 – 55°C 170 440 245 500 125°C 70 180 90 240 IDD Supply current POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 dB 94 – 160 † Full range is – 55°C to 125°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. 24 mV nA µA TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 MEDIUM-BIAS MODE operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC271C, TLC271AC, TLC271BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 kΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 2.5 V Vn BOM B1 φm Equivalent input noise voltage f = 1 kHz, See Figure 99 RS = 20 Ω, Maximum output-swing bandwidth VO = VOH, RL = 100 kΩ kΩ, CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 CL = 20 pF, F Unity-gain bandwidth Phase margin VI = 10 mV, mV CL = 20 pF F, f = B1, See Figure 100 TYP 25°C 0.43 0°C 0.46 70°C 0.36 25°C 0.40 0°C 0.43 70°C 0.34 25°C 32 25°C 55 0°C 60 70°C 50 25°C 525 0°C 600 70°C 400 25°C 40° 0°C 41° 70°C 39° UNIT MAX V/µs nV/√Hz kHz kHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC271C, TLC271AC, TLC271BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 kΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 5.5 V Vn BOM B1 φm Equivalent input noise voltage f = 1 kHz, See Figure 99 RS = 20 Ω, Maximum output-swing bandwidth VO = VOH, RL = 100 kΩ kΩ, CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 F CL = 20 pF, Unity-gain bandwidth Phase margin VI = 10 mV, mV CL = 20 pF F, POST OFFICE BOX 655303 f = B1, See Figure 100 • DALLAS, TEXAS 75265 TYP 25°C 0.62 0°C 0.67 70°C 0.51 25°C 0.56 0°C 0.61 70°C 0.46 25°C 32 25°C 35 0°C 40 70°C 30 25°C 635 0°C 710 70°C 510 25°C 43° 0°C 44° 70°C 42° UNIT MAX V/µs nV/√Hz kHz kHz 25 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 MEDIUM-BIAS MODE operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC271I, TLC271AI, TLC271BI MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 kΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 2.5 V Vn BOM B1 φm Equivalent input noise voltage f = 1 kHz, See Figure 99 RS = 20 Ω, Maximum output-swing bandwidth VO = VOH, RL = 100 kΩ kΩ, CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 CL = 20 pF, F Unity-gain bandwidth Phase margin VI = 10 mV, mV CL = 20 pF F, f = B1, See Figure 100 TYP 25°C 0.43 – 40°C 0.51 85°C 0.35 25°C 0.40 – 40°C 0.48 85°C 0.32 25°C 32 25°C 55 – 40°C 75 85°C 45 25°C 525 – 40°C 770 85°C 370 25°C 40° – 40°C 43° 85°C 38° UNIT MAX V/µs nV/√Hz kHz MHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC271I, TLC271AI, TLC271BI MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 kΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 5.5 V Vn BOM B1 φm 26 Equivalent input noise voltage f = 1 kHz, See Figure 99 RS = 20 Ω, Maximum output-swing bandwidth VO = VOH,3 3 RL = 100 kΩ kΩ, CL = 20 pF, F See Figure 98 V VI = 10 mV, See Figure 100 F CL = 20 pF, Unity-gain bandwidth Phase margin VI = 10 mV, mV CL = 20 pF F, POST OFFICE BOX 655303 f = B1, See Figure 100 • DALLAS, TEXAS 75265 TYP 25°C 0.62 – 40°C 0.77 85°C 0.47 25°C 0.56 – 40°C 0.70 85°C 0.44 25°C 32 25°C 35 – 40°C 45 85°C 25 25°C 635 – 40°C 880 85°C 480 25°C 43° – 40°C 46° 85°C 41° UNIT MAX V/µs nV/√Hz kHz kHz TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 MEDIUM-BIAS MODE operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 kΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 2.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 99 RS = 20 Ω, BOM Maximum output-swing bandwidth VO = VOH, RL = 100 kΩ kΩ, CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 CL = 20 pF, F B1 φm Unity-gain bandwidth Phase margin mV VI = 10 mV, CL = 20 pF F, f = B1, See Figure 100 TA TLC271M MIN TYP 25°C 0.43 – 55°C 0.54 125°C 0.29 25°C 0.40 – 55°C 0.50 125°C 0.28 25°C 32 25°C 55 – 55°C 80 125°C 40 25°C 525 – 55°C 850 125°C 330 25°C 40° – 55°C 43° 125°C 36° MAX UNIT V/µs nV/√Hz kHz kHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 kΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 5.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 99 BOM Maximum output-swing bandwidth VO = VOH, RL = 100 kΩ kΩ, B1 φm Unity-gain bandwidth Phase margin VI = 10 mV, V See Figure 100 mV VI = 10 mV, CL = 20 pF F, POST OFFICE BOX 655303 RS = 20 Ω, CL = 20 pF, F See Figure 98 CL = 20 pF, F f = B1, See Figure 100 • DALLAS, TEXAS 75265 TA TLC271M MIN TYP 25°C 0.62 – 55°C 0.81 125°C 0.38 25°C 0.56 – 55°C 0.73 125°C 0.35 25°C 32 25°C 35 – 55°C 50 125°C 20 25°C 635 – 55°C 960 125°C 440 25°C 43° – 55°C 47° 125°C 39° MAX UNIT V/µs nV/√Hz kHz kHz 27 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE) Table of Graphs FIGURE 28 VIO αVIO Input offset voltage Distribution 34, 35 Temperature coefficient Distribution 36, 37 VOH High-level g output voltage g High-level output vs High level out ut current vs Supply y voltage g vs Free-air temperature 38, 39 40 41 VOL Low level output voltage Low-level vs Common-mode Common mode input in ut voltage vs Differential input voltage g vs Free-air temperature vs Low-level output current 42, 43 44 45 46, 47 AVD Large-signal g g differential voltage g amplification vs Supply Su ly voltage vs Free-air temperature vs Frequency 48 49 60, 61 IIB IIO Input bias current vs Free-air temperature 50 Input offset current vs Free-air temperature 50 VI Maximum Input voltage vs Supply voltage 51 IDD Supply current vs Supplyy voltage g vs Free-air temperature 52 53 SR Slew rate vs Supply y voltage g vs Free-air temperature 54 55 Bias-select current vs Supply voltage 56 VO(PP) Maximum peak-to-peak output voltage vs Frequency 57 B1 Unity gain bandwidth Unity-gain vs Free-air temperature vs Supply voltage 58 59 φm Phase margin g vs Supply Su ly voltage vs Free-air temperature vs Capacitive load 62 63 64 Vn Equivalent input noise voltage vs Frequency 65 Phase shift vs Frequency 60, 61 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)† DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE Percentage of Units – % 50 40 ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÁÁÁÁ ÎÎÎÎ ÁÁÁÁ ÎÎÎÎ ÁÁÁÁ ÎÎÎÎ 60 612 Amplifiers Tested From 6 Wafer Lots VDD = 5 V TA = 25°C N Package 50 Percentage of Units – % 60 30 20 40 ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÁÁÁÁ ÁÁÁÁ ÎÎÎÎ ÁÁÁÁ ÎÎÎÎ ÁÁÁÁ 612 Amplifiers Tested From 6 Wafer Lots VDD = 5 V TA = 25°C N Package 30 20 10 10 0 0 –5 –4 –3 –2 –1 0 1 2 3 VIO – Input Offset Voltage – mV 4 –5 5 –4 –3 –2 –1 0 1 2 3 VIO – Input Offset Voltage – mV DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ 60 ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ 60 224 Amplifiers Tested From 6 Water Lots VDD = 5 V TA = 25°C to 125°C P Package Outliers: (1) 33.0 µV/°C 50 Percentage of Units – % Percentage of Units – % 40 5 Figure 35 Figure 34 50 4 30 20 10 40 224 Amplifiers Tested From 6 Water Lots VDD = 10 V TA = 25°C to 125°C P Package Outliers: (1) 34.6 µV/°C 30 20 10 0 – 10 – 8 – 6 – 4 – 2 0 2 4 6 8 αVIO – Temperature Coefficient – µV/°C 10 0 – 10 – 8 – 6 – 4 – 2 0 2 4 6 8 αVIO – Temperature Coefficient – µV/°C Figure 36 10 Figure 37 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 29 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)† HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT 16 5 V VOH OH – High-Level Output Voltage – V V VOH OH – High-Level Output Voltage – V VID = 100 mV TA = 25°C 4 VDD = 5 V 3 VDD = 4 V VDD = 3 V 2 ÁÁÁ ÁÁÁ VID = 100 mV TA = 25°C 14 VDD = 16 V 12 10 8 VDD = 10 V 6 ÁÁÁ ÁÁÁ 1 4 2 0 0 0 –2 –4 –6 –8 IOH – High-Level Output Current – mA 0 – 10 – 5 – 10 – 15 – 20 – 25 – 30 – 35 – 40 IOH – High-Level Output Current – mA Figure 39 Figure 38 HIGH-LEVEL OUTPUT VOLTAGE vs SUPPLY VOLTAGE VDD – 1.6 VID = 100 mV RL = 10 kΩ TA = 25°C 14 V VOH OH – High-Level Output Voltage – V V VOH OH – High-Level Output Voltage – V 16 HIGH-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 12 10 ÁÁÁ ÁÁÁ ÁÁÁ 8 6 IOH = – 5 mA VID = 100 mA – 1.7 VDD = 5 V – 1.8 – 1.9 –2 VDD = 10 V – 2.1 ÁÁ ÁÁ 4 2 0 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 – 2.2 – 2.3 – 2.4 – 75 – 50 – 25 0 20 50 75 100 TA – Free-Air Temperature – °C Figure 40 Figure 41 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 30 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)† LOW-LEVEL OUTPUT VOLTAGE vs COMMON-MODE INPUT VOLTAGE 500 VDD = 5 V IOL = 5 mA TA = 25°C 650 VOL VOL – Low-Level Output Voltage – mV VOL VOL – Low-Level Output Voltage – mV 700 LOW-LEVEL OUTPUT VOLTAGE vs COMMON-MODE INPUT VOLTAGE 600 ÎÎÎÎÎÎ ÎÎÎÎÎÎ 550 VID = – 100 mV 500 450 ÁÁ ÎÎÎÎ ÁÁ 450 400 VID = – 100 mV VID = – 1 V 350 VID = – 2.5 V ÁÁÁ ÁÁÁ 400 VID = – 1 V 350 300 0 VDD = 10 V IOL= 5 mA TA = 25°C 1 2 3 VIC – Common-Mode Input Voltage – V 300 250 4 0 1 3 5 6 7 9 2 4 8 VIC – Common-Mode Input Voltage – V Figure 42 Figure 43 LOW-LEVEL OUTPUT VOLTAGE vs DIFFERENTIAL INPUT VOLTAGE 900 IOL = 5 mA VIC = |VID/2| TA = 25°C 700 600 500 VDD = 5 V 400 300 ÁÁ ÁÁ VOL VOL – Low-Level Output Voltage – mV VOL VOL – Low-Level Output Voltage – mV LOW-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ 800 10 800 IOL = 5 mA VID = – 1 V VIC = 0.5 V 700 VDD = 5 V 600 500 400 VDD = 10 V ÁÁÁ ÁÁÁ VDD = 10 V 200 100 300 200 100 0 0 –1 –2 –3 –4 –5 –6 –7 –8 VID – Differential Input Voltage – V – 9 – 10 0 – 75 – 50 Figure 44 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C 125 Figure 45 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 31 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)† LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT 1 3 VOL VOL – Low-Level Output Voltage – V VID = – 1 V VIC = 0.5 V TA = 25°C 0.9 VOL VOL – Low-Level Output Voltage – V LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT 0.8 VDD = 5 V 0.7 VDD = 4 V 0.6 VDD = 3 V 0.5 0.4 ÁÁ ÁÁ ÁÁ 0.3 ÁÁ ÁÁ 0.2 0.1 0 0 1 2 3 4 5 6 7 IOL – Low-Level Output Current – mA VID = – 1 V VIC = 0.5 V TA = 25°C 2.5 VDD = 10 V 1.5 1 0.5 0 8 0 5 10 15 20 25 IOL – Low-Level Output Current – mA Figure 46 ÁÁ ÁÁ ÁÁ 400 ÎÎÎÎÎ ÎÎÎÎÎ RL = 100 kΩ LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREE-AIR TEMPERATURE 0°C 25°C 300 70°C ÎÎÎÎ 85°C 200 TA = 125°C 150 100 50 ÁÁ ÁÁ ÁÁ 0 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 RL = 100 kΩ 450 – 40°C 350 250 ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ 500 TA = – 55°C AVD AVD– Large-Signal Differential Voltage Amplification – V/mV AVD AVD– Large-Signal Differential Voltage Amplification – V/mV 450 16 400 350 VDD = 10 V 300 250 200 ÎÎÎÎÎ ÎÎÎÎÎ 150 VDD = 5 V 100 50 0 – 75 – 50 Figure 48 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C Figure 49 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 32 30 Figure 47 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs SUPPLY VOLTAGE 500 VDD = 16 V ÎÎÎÎ ÎÎÎÎ 2 ÎÎÎÎ ÎÎÎÎ POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)† INPUT BIAS CURRENT AND INPUT OFFSET CURRENT vs FREE-AIR TEMPERATURE ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ 16 ÎÎÎÎ TA = 25°C VDD = 10 V VIC = 5 V See Note A 14 1000 ÎÎ VII – Maximum Input Voltage – V V IIB I IO – Input Bias and IIB and IIO Input Offset Currents – pA 10000 MAXIMUM INPUT VOLTAGE vs SUPPLY VOLTAGE IIB 100 ÎÎÎ ÎÎÎ IIO 10 1 12 10 8 6 4 2 0.1 25 35 45 55 65 75 85 0 95 105 115 125 0 2 TA – Free-Air Temperature – °C NOTE A: The typical values of input bias current and input offset current below 5 pA were determined mathematically. 6 8 14 16 SUPPLY CURRENT vs FREE-AIR TEMPERATURE 400 ÁÁÁÁÁ ÁÁÁÁÁ 250 350 12 Figure 51 SUPPLY CURRENT vs SUPPLY VOLTAGE VO = VDD/2 No Load 10 VDD – Supply Voltage – V Figure 50 VO = VDD/2 No Load 225 TA = –55°C 200 300 – 40°C 250 0°C 200 25°C ÁÁÁ ÁÁÁ 150 70°C 100 125°C 50 IIDD DD – Supply Current – mA IIDD DD – Supply Current – mA 4 ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ 175 150 VDD = 10 V 125 100 ÁÁ ÁÁ VDD = 5 V 75 50 25 0 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 0 – 75 – 50 Figure 52 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C 125 Figure 53 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 33 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)† SLEW RATE vs SUPPLY VOLTAGE ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ 0.9 0.6 0.5 0.7 VDD = 10 V VI(PP) = 1 V 0.6 0.5 ÁÁÁÁ ÁÁÁÁ ÎÎÎÎÎÎÎÎÎÎ ÁÁÁÁÁ ÁÁÁÁÁ 0.4 0.4 VDD = 5 V VI(PP) = 1 V 0.3 0.3 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 0.2 – 75 16 – 50 TA = 25°C VI(SEL) = 1/2 VDD – 210 – 180 – 150 –120 – 90 – 60 –30 0 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 VO(PP) – Maximum Peak-to-Peak Output Voltage – V Bias-Select Current – nA MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE vs FREQUENCY ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ – 240 125 Figure 55 BIAS-SELECT CURRENT vs SUPPLY VOLTAGE – 270 VDD = 5 V VI(PP) = 2.5 V – 25 0 25 50 75 100 TA – Free-Air Temperature – °C Figure 54 – 300 AV = 1 RL = 10 kΩ CL = 20 pF See Figure 99 VDD = 10 V VI(PP) = 5.5 V 0.8 SR – Slew Rate – V/ µ s 0.7 ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÎÎÎÎÎÎ ÁÁÁÁÁ ÎÎÎÎÎÎ 0.9 AV = 1 VI(PP) = 1 V RL = 100 kΩ CL = 20 pF TA = 25°C See Figure 99 0.8 SR – Slew Rate – V/ µ s SLEW RATE vs FREE-AIR TEMPERATURE 10 ÎÎÎÎ ÎÎÎÎ 9 VDD = 10 V 8 7 6 ÎÎÎÎ ÎÎÎÎ ÁÁÁÁ ÁÁÁÁ 5 ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ TA = 125°C TA = 25°C TA = – 55°C VDD = 5 V 4 3 RL = 100 kΩ See Figure 99 2 1 0 1 Figure 56 10 100 f – Frequency – kHz 1000 Figure 57 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 34 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)† UNITY-GAIN BANDWIDTH vs SUPPLY VOLTAGE UNITY-GAIN BANDWIDTH vs FREE-AIR TEMPERATURE ÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁ 800 700 VI = 10 mV CL = 20 pF TA = 25°C See Figure 101 750 600 500 400 300 – 75 ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ 800 VDD = 5 V VI = 10 mV CL = 20 pF See Figure 101 B1 B1– Unity-Gain Bandwidth – MHz B1 B1– Unity-Gain Bandwidth – MHz 900 700 650 600 550 500 450 400 – 50 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C 0 125 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 Figure 59 Figure 58 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÎÎÎ ÎÎÎ ÁÁ ÁÁ ÁÁ VDD = 5 V RL = 100 kΩ TA = 25°C 106 105 104 0° 30° AVD 103 102 60° 90° Phase Shift AVD AVD– Large-Signal Differential Voltage Amplification 107 Phase Shift 101 120° 1 150° 0.1 1 10 100 1k 10 f – Frequency – Hz 100 K 180° 1M Figure 60 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 35 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)† LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY ÁÁÁÁÁ ÁÁÁÁÁ ÎÎÎÎÎ ÁÁÁÁÁ ÁÁÁÁÁ ÎÎÎÎ VDD = 10 V RL = 100 kΩ TA = 25°C 106 105 0° 104 30° AVD 103 ÁÁ ÁÁ ÁÁ 60° 102 90° Phase Shift AVD AVD– Large-Signal Differential Voltage Amplification 107 Phase Shift 101 120° 1 150° 0.1 1 10 100 1k 10 k f – Frequency – Hz 100 k 180° 1M Figure 61 PHASE MARGIN vs SUPPLY VOLTAGE PHASE MARGIN vs FREE-AIR TEMPERATURE 50° 45° VI = 10 mV CL = 20 pF TA = 25°C See Figure 100 43° φm m – Phase Margin φm m – Phase Margin 48° VDD = 5 V VI = 10 mV CL = 20 pF See Figure 100 46° ÁÁ ÁÁ ÁÁ 41° ÁÁ ÁÁ ÁÁ 44° 42° 39° 37° 40° 38° 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 35° – 75 – 50 Figure 62 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C Figure 63 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 36 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)† 44° VDD = 5 V VI = 10 mV TA = 25°C See Figure 100 φm m – Phase Margin 42° 40° EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY ÁÁÁ ÁÁÁ ÁÁÁ 38° ÁÁ ÁÁ 36° 34° 32° 30° Vn V n– Equivalent Input Noise Voltage –nV/ nV/Hz Hz PHASE MARGIN vs CAPACITIVE LOAD 300 VDD = 5 V RS = 20 Ω TA = 25°C See Figure 99 250 200 150 100 50 0 28° 0 20 40 60 80 CL – Capacitive Load – pF 100 1 Figure 64 10 100 f – Frequency – Hz 1000 Figure 65 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 37 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 LOW-BIAS MODE electrical characteristics at specified free-air temperature (unless otherwise noted) TLC271C, TLC271AC, TLC271BC TEST CONDITIONS PARAMETER Input offset voltage TLC271AC VDD = 5 V MIN TYP MAX 25°C TLC271C VIO TA† VO = 1 1.4 4V V, VIC = 0 V,, RS = 50 Ω, RI = 1 MΩ TLC271BC 1.1 Full range VDD = 10 V MIN TYP MAX 10 1.1 12 25°C 0.9 Full range 0.24 Full range 5 0.9 2 0.26 3 αVIO IIO Input offset current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.1 60 0.1 60 70°C 7 300 8 300 IIB Input bias current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.6 60 0.7 60 70°C 40 600 50 600 VOH VOL AVD CMRR kSVR II(SEL) IDD 25°C – 0.2 to 4 Full range – 0.2 to 3.5 Common-mode input voltage range (see Note 5) High-level output voltage Low-level output voltage L i l diff ti l Large-signal differential voltage am lification amplification Common-mode rejection ratio VID = 100 mV, V RL= 1 MΩ VID = –100 100 mV, V IOL = 0 MΩ RL= 1 MΩ, See Note 6 VIC = VICRmin – 0.2 to 9 – 0.3 to 9.2 25°C 3.2 4.1 8 8.9 0°C 3 4.1 7.8 8.9 70°C 3 4.2 7.8 8.9 V 25°C 0 50 0 50 0°C 0 50 0 50 70°C 0 50 0 50 25°C 50 520 50 870 0°C 50 700 50 1030 70°C 50 380 50 660 25°C 65 94 65 97 0°C 60 95 60 97 70°C 60 95 60 97 25°C 70 97 70 97 0°C 60 97 60 97 70°C 60 98 60 98 dB Input current (BIAS SELECT) VI(SEL) = VDD 25°C 65 VO = VDD /2, VIC = VDD /2, N lload No d 25°C 10 17 14 23 0°C 12 21 18 33 70°C 8 14 11 20 • DALLAS, TEXAS 75265 mV V/mV VDD = 5 V to t 10 V VO = 1 1.4 4V POST OFFICE BOX 655303 pA V Supply-voltage S l lt rejection j ti ratio ti (∆VDD /∆VIO) Supply current pA V – 0.2 to 8.5 dB 95 † Full range is 0°C to 70°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. 38 µV/°C 1 – 0.3 to 4.2 mV 2 Average temperature coefficient of input offset voltage VICR 1.1 5 6.5 3 25°C to 70°C 10 12 6.5 25°C UNIT nA µA TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 LOW-BIAS MODE electrical characteristics at specified free-air temperature (unless otherwise noted) TLC271I, TLC271AI, TLC271BI TEST CONDITIONS PARAMETER Input offset voltage TLC271AI VDD = 5 V MIN TYP MAX 25°C TLC271I VIO TA† VO = 1 1.4 4V V, VIC = 0 V,, RS = 50 Ω, RL = 1 MΩ TLC271BI 1.1 Full range VDD = 10 V MIN TYP MAX 10 1.1 13 25°C 0.9 Full range 0.24 Full range 5 0.9 2 0.26 3.5 αVIO IIO Input offset current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.1 60 0.1 60 85°C 24 1000 26 1000 IIB Input bias current (see Note 4) VO = VDD /2,, VIC = VDD /2 25°C 0.6 60 0.7 60 85°C 200 2000 220 2000 VOH VOL AVD CMRR kSVR II(SEL) IDD 25°C – 0.2 to 4 Full range – 0.2 to 3.5 Common-mode input voltage range (see Note 5) High-level output voltage Low-level output voltage L i l diff ti l Large-signal differential voltage am lification amplification Common-mode rejection ratio VID = 100 mV, V RL= 1 MΩ VID = – 100 mV, V IOL = 0 RL= 1 MΩ See Note 6 VIC = VICRmin µV/°C 1 – 0.3 to 4.2 – 0.2 to 9 – 0.3 to 9.2 pA pA V – 0.2 to 8.5 V 25°C 3 4.1 8 8.9 – 40°C 3 4.1 7.8 8.9 85°C 3 4.2 7.8 8.9 V 25°C 0 50 0 50 – 40°C 0 50 0 50 85°C 0 50 0 50 25°C 50 520 50 870 – 40°C 50 900 50 1550 85°C 50 330 50 585 25°C 65 94 65 97 – 40°C 60 95 60 97 85°C 60 95 60 98 25°C 70 97 70 97 – 40°C 60 97 60 97 85°C 60 98 60 98 mV V/mV dB Supply-voltage S l lt rejection j ti ratio ti (∆VDD /∆VIO) VDD = 5 V to t 10 V VO = 1 1.4 4V Input current (BIAS SELECT) VI(SEL) = VDD 25°C 65 VO = VDD /2, VIC = VDD /2, N lload No d 25°C 10 17 14 23 – 40°C 16 27 25 43 85°C 17 13 10 18 Supply current mV 2 Average temperature coefficient of input offset voltage VICR 1.1 5 7 3.5 25°C to 85°C 10 13 7 25°C UNIT dB 95 nA µA † Full range is – 40 to 85°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 39 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 LOW-BIAS MODE electrical characteristics at specified free-air temperature (unless otherwise noted) TLC271M PARAMETER VIO Input offset voltage TEST CONDITIONS VO = 1.4 V, VIC = 0 V, 25°C RS = 50 Ω, RL = 1 MΩ Full range αVIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) VO = VDD /2,, VIC = VDD /2 IIB Input bias current (see Note 4) VO = VDD /2,, VIC = VDD /2 VICR VOH VOL AVD CMRR TA† Low-level output voltage L i l diff ti l Large-signal differential voltage am lification amplification Common-mode rejection ratio 1.1 VDD = 10 V MIN TYP MAX 10 1.1 10 12 12 25°C to 125°C 1.4 25°C 0.1 60 0.1 60 pA 125°C 1.4 15 1.8 15 nA 25°C 0.6 60 0.7 60 pA 125°C 9 35 10 35 nA 25°C 0 to 4 Full range 0 to 3.5 25°C 3.2 4.1 8 8.9 – 55°C 3 4.1 7.8 8.8 125°C 3 4.2 7.8 9 VID = 100 mV, V RL= 1 MΩ VID = – 100 mV, V IOL = 0 RL= 1 MΩ MΩ, See Note 6 VIC = VICRmin µV/°C 1.4 – 0.3 to 4.2 0 to 9 – 0.3 to 9.2 V 0 to 8.5 V V 25°C 0 50 0 50 – 55°C 0 50 0 50 125°C 0 50 0 50 25°C 50 520 50 870 – 55°C 25 1000 25 1775 125°C 25 200 25 380 25°C 65 94 65 97 – 55°C 60 95 60 97 125°C 60 85 60 91 25°C 70 97 70 97 – 55°C 60 97 60 97 125°C 60 98 60 98 dB VDD = 5 V to t 10 V VO = 1 1.4 4V Input current (BIAS SELECT) VI(SEL) = VDD 25°C 65 VO = VDD /2, VIC = VDD /2, N lload No d 25°C 10 17 14 23 – 55°C 17 30 28 48 125°C 7 12 9 † Full range is – 55°C to 125°C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. 15 II(SEL) IDD 40 Supply current POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 mV V/mV Supply-voltage S l lt rejection j ti ratio ti (∆VDD /∆VIO) kSVR UNIT mV Common-mode input voltage range (see Note 5) High-level output voltage VDD = 5 V MIN TYP MAX dB 95 nA µA TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 LOW-BIAS MODE operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC271C, TLC271AC, TLC271BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 MΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 2.5 V Vn BOM B1 φm Equivalent input noise voltage f = 1 kHz, See Figure 99 RS = 20 Ω, Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ MΩ, CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 CL = 20 pF, F Unity-gain bandwidth Phase margin VI = 10 mV, mV CL = 20 pF F, f = B1, See Figure 100 TYP 25°C 0.03 0°C 0.04 70°C 0.03 25°C 0.03 0°C 0.03 70°C 0.02 25°C 68 25°C 5 0°C 6 70°C 4.5 25°C 85 0°C 100 70°C 65 25°C 34° 0°C 36° 70°C 30° UNIT MAX V/µs nV/√Hz kHz kHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC271C, TLC271AC, TLC271BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 MΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 5.5 V Vn BOM B1 φm Equivalent input noise voltage f = 1 kHz, See Figure 99 RS = 20 Ω, Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ MΩ, CL = 20 pF, F See Figure 98 mV VI = 10 mV, See Figure 100 F CL = 20 pF, VI = 10 mV, mV CL = 20 pF F, f = B1, See Figure 100 Unity-gain bandwidth Phase margin POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYP 25°C 0.05 0°C 0.05 70°C 0.04 25°C 0.04 0°C 0.05 70°C 0.04 25°C 68 25°C 1 0°C 1.3 70°C 0.9 25°C 110 0°C 125 70°C 90 25°C 38° 0°C 40° 70°C 34° UNIT MAX V/µs nV/√Hz kHz kHz 41 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 LOW-BIAS MODE operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC271I, TLC271AI, TLC271BI MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 MΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 2.5 V Vn BOM B1 φm Equivalent input noise voltage f = 1 kHz, See Figure 99 RS = 20 Ω, Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ MΩ, CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 CL = 20 pF, F Unity-gain bandwidth Phase margin VI = 10 mV, mV CL = 20 pF F, f = B1, See Figure 100 TYP 25°C 0.03 – 40°C 0.04 85°C 0.03 25°C 0.03 – 40°C 0.04 85°C 0.02 25°C 68 25°C 5 – 40°C 7 85°C 4 25°C 85 – 40°C 130 85°C 55 25°C 34° – 40°C 38° 85°C 28° UNIT MAX V/µs nV/√Hz kHz MHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC271C, TLC271AC, TLC271BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 MΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 5.5 V Vn BOM B1 φm 42 Equivalent input noise voltage f = 1 kHz, See Figure 99 RS = 20 Ω, Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ MΩ, CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 F CL = 20 pF, Unity-gain bandwidth Phase margin VI = 10 mV,l mV l CL = 20 pF F, POST OFFICE BOX 655303 f = B1, See Figure 100 • DALLAS, TEXAS 75265 TYP 25°C 0.05 – 40°C 0.06 85°C 0.03 25°C 0.04 – 40°C 0.05 85°C 0.03 25°C 68 25°C 1 – 40°C 1.4 85°C 0.8 25°C 110 – 40°C 155 85°C 80 25°C 38° – 40°C 42° 85°C 32° UNIT MAX V/µs nV/√Hz kHz MHz TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 LOW-BIAS MODE operating characteristics at specified free-air temperature, VDD = 5 V PARAMETER TEST CONDITIONS VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 MΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 2.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 99 RS = 20 Ω, BOM Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ MΩ, CL = 20 pF, F See Figure 98 VI = 10 mV, V See Figure 100 CL = 20 pF, F B1 φm Unity-gain bandwidth Phase margin mV VI = 10 mV, CL = 20 pF F, f = B1, See Figure 100 TA TLC271M MIN TYP 25°C 0.03 – 55°C 0.04 125°C 0.02 25°C 0.03 – 55°C 0.04 125°C 0.02 25°C 68 25°C 5 – 55°C 8 125°C 3 25°C 85 – 55°C 140 125°C 45 25°C 34° – 55°C 39° 125°C 25° MAX UNIT V/µs nV/√Hz kHz kHz operating characteristics at specified free-air temperature, VDD = 10 V PARAMETER TEST CONDITIONS VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 MΩ, CL = 20 pF, pF See Figure 98 VI(PP) ( ) = 5.5 V Vn Equivalent input noise voltage f = 1 kHz, See Figure 99 BOM Maximum output-swing bandwidth VO = VOH, RL = 1 MΩ MΩ, B1 φm Unity-gain bandwidth Phase margin VI = 10 mV, V See Figure 100 mV VI = 10 mV, CL = 20 pF F, POST OFFICE BOX 655303 RS = 20 Ω, CL = 20 pF, F See Figure 98 CL = 20 pF, F f = B1, See Figure 100 • DALLAS, TEXAS 75265 TA TLC271M MIN TYP 25°C 0.05 – 55°C 0.06 125°C 0.03 25°C 0.04 – 55°C 0.06 125°C 0.03 25°C 68 25°C 1 – 55°C 1.5 125°C 0.7 25°C 110 – 55°C 165 125°C 70 25°C 38° – 55°C 43° 125°C 29° MAX UNIT V/µs nV/√Hz kHz kHz 43 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (LOW-BIAS MODE) Table of Graphs FIGURE 44 VIO αVIO Input offset voltage Distribution 66, 67 Temperature coefficient Distribution 68, 69 VOH High-level g output voltage g High-level output vs High level out ut current vs Supply y voltage g vs Free-air temperature 70, 71 72 73 VOL Low level output voltage Low-level vs Common-mode Common mode input in ut voltage vs Differential input voltage g vs Free-air temperature vs Low-level output current 74, 75 76 77 78, 79 AVD Large-signal g g differential voltage g amplification vs Supply Su ly voltage vs Free-air temperature vs Frequency 80 81 92, 93 IIB IIO Input bias current vs Free-air temperature 82 Input offset current vs Free-air temperature 82 VI Maximum input voltage vs Supply voltage 83 IDD Supply current vs Supplyy voltage g vs Free-air temperature 84 85 SR Slew rate vs Supply y voltage g vs Free-air temperature 86 87 Bias-select current vs Supply voltage 88 VO(PP) Maximum peak-to-peak output voltage vs Frequency 89 B1 Unity gain bandwidth Unity-gain vs Free-air temperature vs Supply voltage 90 91 φm Phase margin g vs Supply Su ly voltage vs Free-air temperature vs Capacitive load 94 95 96 Vn Equivalent input noise voltage vs Frequency 97 Phase shift vs Frequency 92, 93 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (LOW-BIAS MODE)† DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE Percentage of Units – % 60 ÎÎÎÎÎÎÎÎÎÎÎÎ 70 905 Amplifiers Tested From 6 Wafer Lots VDD = 5 V TA = 25°C P Package 50 40 30 20 50 40 30 20 10 10 0 905 Amplifiers Tested From 6 Wafer Lots VDD = 10 V TA = 25°C P Package 60 Percentage of Units – % 70 DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE –5 –4 –3 –2 –1 0 1 2 3 VIO – Input Offset Voltage – mV 4 0 5 –5 –4 DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT 70 356 Amplifiers Tested From 8 Wafer Lots VDD = 5 V TA = 25°C to 125°C P Package Outliers: (1) 19.2 µV/°C (1) 12.1 µV/°C 60 Percentage of Units – % Percentage of Units – % 5 DISTRIBUTION OF TLC271 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT 70 50 4 Figure 67 Figure 66 60 –3 –2 –1 0 1 2 3 VIO – Input Offset Voltage – mV 40 30 20 10 50 40 ÎÎÎÎÎÎ ÎÎÎÎÎÎ 356 Amplifiers Tested From 8 Wafer Lots VDD = 10 V TA = 25°C to 125°C P Package Outliers: (1) 18.7 µV/°C (1) 11.6 µV/°C 30 20 10 0 – 10 – 8 –6 –4 –2 0 2 4 6 8 10 αVIO – Temperature Coefficient – µV/°C 0 2 4 6 8 – 10 – 8 – 6 – 4 – 2 0 αVIO – Temperature Coefficient – µV/°C Figure 68 10 Figure 69 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 45 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (LOW-BIAS MODE)† HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT 16 5 4 VDD = 5 V 3 VDD = 4 V ÁÁÁ ÁÁÁ ÁÁÁ VDD = 3 V 2 0 0 VDD = 16 V 12 10 8 VDD = 10 V ÁÁ ÁÁ ÁÁ 1 –2 –4 –6 –8 IOH – High-Level Output Current – mA VID = 100 mV TA = 25°C 14 V VOH– OH High-Level Output Voltage – V VOH High-Level Output Voltage – V VOH– VID = 100 mV TA = 25°C 6 4 2 0 0 – 10 – 5 – 10 – 15 – 20 – 25 – 30 – 35 IOH – High-Level Output Current – mA Figure 71 Figure 70 HIGH-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE HIGH-LEVEL OUTPUT VOLTAGE vs SUPPLY VOLTAGE – 1.6 VID = 100 mV RL = 1 MΩ TA = 25°C 14 V VOH– OH High-Level Output Voltage – V V VOH– OH High-Level Output Voltage – V 16 12 10 ÁÁ ÁÁ ÁÁ 8 6 2 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 IOH = – 5 mA VID = 100 mV – 1.7 VDD = 5 V – 1.8 – 1.9 –2 VDD = 10 V – 2.1 ÁÁ ÁÁ ÁÁ 4 0 – 2.2 – 2.3 – 2.4 – 75 – 50 Figure 72 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C Figure 73 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 46 – 40 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (LOW-BIAS MODE)† LOW-LEVEL OUTPUT VOLTAGE vs COMMON-MODE INPUT VOLTAGE LOW-LEVEL OUTPUT VOLTAGE vs COMMON-MODE INPUT VOLTAGE ÁÁ ÁÁ 500 VDD = 5 V IOL = 5 mA TA = 25°C 650 VOL VOL – Low-Level Output Voltage – mV VOL VOL – Low-Level Output Voltage – mV 700 600 ÎÎÎÎÎÎ ÎÎÎÎÎÎ 550 VID = – 100 mV 500 450 450 400 VID = – 100 mV VID = – 1 V 350 VID = – 2.5 V ÁÁÁ ÁÁÁ 400 VID = – 1 V 350 300 250 300 0 VDD = 10 V IOL = 5 mA TA = 25°C 1 2 3 VIC – Common-Mode Input Voltage – V 4 0 1 3 5 7 9 2 4 6 8 VIC – Common-Mode Input Voltage – V Figure 75 Figure 74 LOW-LEVEL OUTPUT VOLTAGE vs DIFFERENTIAL INPUT VOLTAGE LOW-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 900 IOL = 5 mA VIC = VID/2 TA = 25°C 700 VOL VOL – Low-Level Output Voltage – mV VOL VOL – Low-Level Output Voltage – mV 800 ÁÁ ÁÁ ÁÁ 10 600 ÎÎÎÎ ÎÎÎÎ 500 VDD = 5 V 400 300 VDD = 10 V 200 100 0 0 –1 ÁÁ ÁÁ ÁÁ – 2 –3 – 4 – 5 – 6 – 7 – 8 – 9 – 10 VID – Differential Input Voltage – V 800 IOL = 5 mA VID = – 1 V VIC = 0.5 V 700 ÎÎÎÎ VDD = 5 V 600 500 ÎÎÎÎÎ ÎÎÎÎÎ 400 VDD = 10 V 300 200 100 0 – 75 – 50 Figure 76 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C 125 Figure 77 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 47 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (LOW-BIAS MODE)† LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT 1 3 0.8 VOL VOL – Low-Level Output Voltage – V VID = – 1 V VIC = 0.5 V TA = 25°C 0.9 VOL VOL – Low-Level Output Voltage – V LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT VDD = 5 V 0.7 VDD = 4 V 0.6 VDD = 3 V 0.5 ÁÁ ÁÁ ÁÁ 0.4 0.3 2.5 0.1 0 0 1 2 3 4 5 6 7 VDD = 16 V 2 VDD = 10 V 1.5 ÁÁ ÁÁ 0.2 VID = – 1 V VIC = 0.5 V TA = 25°C 1 0.5 0 8 0 5 10 15 20 25 IOL – Low-Level Output Current – mA IOL – Low-Level Output Current – mA Figure 78 Figure 79 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREE-AIR TEMPERATURE LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs SUPPLY VOLTAGE ÎÎÎÎÎ ÎÎÎÎÎ AVD AVD– Large-Signal Differential Voltage Amplification – V/mV TA = – 55°C 1600 1400 TA = 0°C 1200 ÁÁ ÁÁ ÁÁ ÁÁ ÁÁ 70°C 800 85°C 600 400 1600 1400 ÎÎÎ ÎÎÎ ÎÎÎÁÁ ÁÁ ÁÁ ÁÁ ÁÁ 25°C 1000 RL = 1 MΩ 1800 – 40°C AVD AVD– Large-Signal Differential Voltage Amplification – V/mV RL = 1 MΩ ÎÎÎÎÎ ÎÎÎÎÎ 2000 2000 1800 VDD = 10 V 1200 1000 800 600 VDD = 5 V 400 125°C 200 0 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 200 0 – 75 – 50 Figure 80 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C Figure 81 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 48 30 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (LOW-BIAS MODE)† INPUT BIAS CURRENT AND INPUT OFFSET CURRENT vs FREE-AIR TEMPERATURE ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ IIB I IO – Input Bias and IIB and IIO Input Offset Currents – pA 1000 ÎÎÎÎ ÎÎÎÎ 16 VDD = 10 V VIC = 5 V See Note A TA = 25°C 14 ÎÎ ÎÎ IIB 100 VII – Maximum Input Voltage – V V 10000 MAXIMUM INPUT VOLTAGE vs SUPPLY VOLTAGE ÎÎ ÎÎ IIO 10 1 12 10 8 6 4 2 0.1 25 35 45 55 65 75 85 0 95 105 115 125 0 2 TA – Free-Air Temperature – °C NOTE A: The typical values of input bias current and input offset current below 5 pA were determined mathematically. 6 8 10 16 SUPPLY CURRENT vs FREE-AIR TEMPERATURE 30 45 VO = VDD/2 No Load TA = – 55°C VO = VDD/2 No Load ÎÎÎ 35 – 40°C 30 25 0°C ÎÎÎ 20 ÁÁ ÁÁ 25°C 15 70°C 10 125°C 5 2 4 6 8 10 12 VDD – Supply Voltage – V 14 mA A IIDD DD – Supply Current – µ 25 mA A IIDD DD – Supply Current – µ 14 Figure 83 SUPPLY CURRENT vs SUPPLY VOLTAGE 0 0 12 VDD – Supply Voltage – V Figure 82 40 4 ÁÁ ÁÁ 16 20 VDD = 10 V 15 10 VDD = 5 V 5 0 – 75 – 50 Figure 84 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C 125 Figure 85 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 49 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (LOW-BIAS MODE)† SLEW RATE vs SUPPLY VOLTAGE 0.07 0.07 AV = 1 VI(PP) = 1 V RL = 1 MΩ CL = 20 pF TA= 25°C See Figure 98 0.05 VDD = 10 V VI(PP) = 5.5 V 0.06 SR – Slew Rate – V/sµ s 0.06 SR – Slew Rate – V/sµ s SLEW RATE vs FREE-AIR TEMPERATURE 0.04 0.03 0.02 0.01 0.05 VDD = 10 V VI(PP) = 1 V 0.04 0.03 VDD = 5 V VI(PP) = 1 V 0.02 VDD = 5 V VI(PP) = 2.5 V 0.01 0.00 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 0.00 – 75 – 50 Figure 86 VO(PP) – Maximum Peak-to-Peak Output Voltage – V ÎÎÎÎÎÎ ÎÎÎÎÎÎ TA = 25°C VI(SEL) = VDD Bias-Select Current – nA 120 105 90 75 60 45 30 15 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 10 ÁÁ 9 8 VDD = 10 V 7 6 5 ÁÁÁÁ ÁÁÁÁ ÁÁÁÁ TA = 125°C TA = 25°C TA = –55°C VDD = 5 V 4 ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ 3 RL = 1 MΩ See Figure 98 2 1 0 0.1 Figure 88 1 10 f – Frequency – kHz Figure 89 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 50 125 MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE vs FREQUENCY 150 0 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C Figure 87 BIAS-SELECT CURRENT vs SUPPLY VOLTAGE 135 RL = 1 MΩ CL = 20 pF AV = 1 See Figure 98 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 100 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (LOW-BIAS MODE)† UNITY-GAIN BANDWIDTH vs FREE-AIR TEMPERATURE 140 VDD = 5 V VI = 10 mV CL = 20 pF See Figure 100 130 130 B1 B1 – Unity-Gain Bandwidth – kHz B1 B1 – Unity-Gain Bandwidth – kHz 150 UNITY-GAIN BANDWIDTH vs SUPPLY VOLTAGE 110 90 70 50 120 110 VI = 10 mV CL = 20 pF TA = 25°C See Figure 100 ÎÎÎÎÎÎ ÎÎÎÎÎÎ 100 90 80 70 60 30 – 75 50 – 50 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C 125 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 Figure 91 Figure 90 LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY 107 VDD = 5 V RL = 1 MΩ TA = 25°C ÁÁ ÁÁ ÁÁ 105 ÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ 104 0° 30° AVD 103 102 60° 90° Phase Shift AVD AVD – Large-Signal Differential Voltage Amplification 106 Phase Shift 101 120° 1 0.1 150° 1 10 100 1k 10 k f – Frequency – Hz 100 k 180° 1M Figure 92 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 51 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (LOW-BIAS MODE)† LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY 107 VDD = 10 V RL = 1 MΩ TA = 25°C ÁÁ ÁÁ 105 0° ÎÎÎÎ 104 30° AVD 103 60° ÎÎÎÎÎ ÎÎÎÎÎ 102 90° Phase Shift AVD AVD – Large-Signal Differential Voltage Amplification 106 Phase Shift 101 1 0.1 1 10 120° 150° 100 1k 10 k f – Frequency – Hz 100 k 180° 1M Figure 93 PHASE MARGIN vs SUPPLY VOLTAGE PHASE MARGIN vs FREE-AIR TEMPERATURE 42° 40° VI = 10 mV CL = 20 pF TA = 25°C See Figure 100 ÁÁ ÁÁ 36° 38° φm m – Phase Margin φm m – Phase Margin 40° VDD = 5 mV VI = 10 mV CL = 20 pF See Figure 100 38° 36° 34° 32° 30° ÁÁ ÁÁ 34° 28° 26° 24° 32° 22° 30° 0 2 4 6 8 10 12 VDD – Supply Voltage – V 14 16 20° – 75 – 50 – 25 0 25 50 75 100 TA – Free-Air Temperature – °C 125 Figure 95 Figure 94 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. 52 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS (LOW-BIAS MODE)† 37° VDD = 5 mV VI = 10 mV TA = 25°C See Figure 100 φm m – Phase Margin 35° 33° ÁÁ ÁÁ ÁÁ ÁÁ 31° ÁÁ ÁÁ 29° 27° 25° 0 10 20 30 40 50 60 70 80 CL – Capacitive Load – pF 90 100 VN nV/ Hz V n – Equivalent Input Noise Voltage – nV/Hz PHASE MARGIN vs CAPACITIVE LOAD EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÎÎÎÎÎ ÁÁÁÁÁ 200 VDD = 5 V RS = 20Ω TA = 25°C See Figure 99 175 150 125 100 75 50 25 0 1 Figure 96 10 100 f – Frequency – Hz 1000 Figure 97 † Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 53 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 PARAMETER MEASUREMENT INFORMATION single-supply versus split-supply test circuits Because the TLC271 is optimized for single-supply operation, circuit configurations used for the various tests often present some inconvenience since the input signal, in many cases, must be offset from ground. This inconvenience can be avoided by testing the device with split supplies and the output load tied to the negative rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either circuit gives the same result. VDD VDD + – – VO VO + CL + VI VI RL CL RL VDD – (a) SINGLE SUPPLY (b) SPLIT SUPPLY Figure 98. Unity-Gain Amplifier 2 kΩ 2 kΩ VDD 20 Ω VDD + – – 1/2 VDD VO VO + + 20 Ω 20 Ω 20 Ω VDD – (a) SINGLE SUPPLY (b) SPLIT SUPPLY Figure 99. Noise-Test Circuit 10 kΩ VDD VDD + 100 Ω – 100 Ω – VI 10 kΩ VI VO VO + + 1/2 VDD CL CL VDD – (a) SINGLE SUPPLY (b) SPLIT SUPPLY Figure 100. Gain-of-100 Inverting Amplifier 54 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 PARAMETER MEASUREMENT INFORMATION input bias current Because of the high input impedance of the TLC271 operational amplifiers, attempts to measure the input bias current can result in erroneous readings. The bias current at normal room ambient temperature is typically less than 1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions are offered to avoid erroneous measurements: 1. Isolate the device from other potential leakage sources. Use a grounded shield around and between the device inputs (see Figure 101). Leakages that would otherwise flow to the inputs are shunted away. 2. Compensate for the leakage of the test socket by actually performing an input bias current test (using a picoammeter) with no device in the test socket. The actual input bias current can then be calculated by subtracting the open-socket leakage readings from the readings obtained with a device in the test socket. One word of caution: many automatic testers as well as some bench-top operational amplifier testers us the servo-loop technique with a resistor in series with the device input to measure the input bias current (the voltage drop across the series resistor is measured and the bias current is calculated). This method requires that a device be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is not feasible using this method. 8 5 V = VIC 1 4 Figure 101. Isolation Metal Around Device inputs (JG and P packages) low-level output voltage To obtain low-supply-voltage operation, some compromise is necessary in the input stage. This compromise results in the device low-level output being dependent on both the common-mode input voltage level as well as the differential input voltage level. When attempting to correlate low-level output readings with those quoted in the electrical specifications, these two conditions should be observed. If conditions other than these are to be used, please refer to the Typical Characteristics section of this data sheet. input offset voltage temperature coefficient Erroneous readings often result from attempts to measure temperature coefficient of input offset voltage. This parameter is actually a calculation using input offset voltage measurements obtained at two different temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device and the test socket. This moisture results in leakage and contact resistance which can cause erroneous input offset voltage readings. The isolation techniques previously mentioned have no effect on the leakage since the moisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that these measurements be performed at temperatures above freezing to minimize error. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 55 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 PARAMETER MEASUREMENT INFORMATION full-power response Full-power response, the frequency above which the amplifier slew rate limits the output voltage swing, is often specified two ways: full-linear response and full-peak response. The full-linear response is generally measuredby monitoring the distortion level of the output while increasing the frequency of a sinusoidal input signal until the maximum frequency is found above which the output contains significant distortion. The full-peak response is defined as the maximum output frequency, without regard to distortion, above which full peak-to-peak output swing cannot be maintained. Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified in this data sheet and is measured using the circuit of Figure 98. The initial setup involves the use of a sinusoidal input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained (Figure 102). A square wave is used to allow a more accurate determination of the point at which the maximum peak-to-peak output is reached. (a) f = 100 Hz (b) BOM > f > 100 Hz (c) f = BOM (d) f > BOM Figure 102. Full-Power-Response Output Signal test time Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume, short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET devices, and require longer test times than their bipolar and BiFET counterparts. The problem becomes more pronounced with reduced supply levels and lower temperatures. APPLICATION INFORMATION VDD single-supply operation R4 POST OFFICE BOX 655303 VI R2 VO + 56 R1 – While the TLC271 performs well using dual power supplies (also called balanced or split supplies), the design is optimized for single-supply operation. This includes an input common mode voltage range that encompasses ground as well as an output voltage range that pulls down to ground. The supply voltage range extends down to 3 V (C-suffix types), thus allowing operation with supply levels commonly available for TTL and HCMOS; however, for maximum dynamic range, 16-V single-supply operation is recommended. Vref V R3 C 0.01 µF ref V O + VDD R1 R3 ) R3 + (Vref * VI) R4 ) Vref R2 Figure 103. Inverting Amplifier With Voltage Reference • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION single-supply operation (continued) Many single-supply applications require that a voltage be applied to one input to establish a reference level that is above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 103). The low input bias current consumption of the TLC271 permits the use of very large resistive values to implement the voltage divider, thus minimizing power consumption. The TLC271 works well in conjunction with digital logic; however, when powering both linear devices and digital logic from the same power supply, the following precautions are recommended: 1. Power the linear devices from separate bypassed supply lines (see Figure 104); otherwise, the linear device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital logic. 2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive decoupling is often adequate; however, RC decoupling may be necessary in high-frequency applications. – OUT Logic Logic Logic Power Supply + (a) COMMON SUPPLY RAILS – + OUT Logic Logic Logic Power Supply (b) SEPARATE BYPASSED SUPPLY RAILS (preferred) Figure 104. Common Versus Separate Supply Rails POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 57 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION input offset voltage nulling The TLC271 offers external input offset null control. Nulling of the input off set voltage may be achieved by adjusting a 25-kΩ potentiometer connected between the offset null terminals with the wiper Connected as shown in Figure 105. The amount of nulling range varies with the bias selection. In the high-bias mode, the nulling range allows the maximum offset voltage specified to be trimmed to zero. In low-bias and medium-bias modes, total nulling may not be possible. ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ – IN – VDD N1 OUT N2 + IN + IN – IN + 25 kΩ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ – OUT N2 + 25 kΩ N1 GND (a) SINGLE SUPPLY (b) SPLIT SUPPLY Figure 105. Input Offset Voltage Null Circuit bias selection Bias selection is achieved by connecting the bias select pin to one of the three voltage levels (see Figure 106). For medium-bias applications, R is recommended that the bias select pin be connected to the mid-point between the supply rails. This is a simple procedure in split-supply applications, since this point is ground. In single-supply applications, the medium-bias mode necessitates using a voltage divider as indicated. The use of large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However, large-value resistors used in conjunction with a large-value capacitor requires significant time to charge up to the supply midpoint after the supply is switched on. A voltage other than the midpoint may be used if it is within the voltages specified in the table of Figure 106. VDD Low To BIAS SELECT 1 MΩ BIAS MODE Medium Medium VDD 1 V to VDD – 1 V High GND Low High 1 MΩ BIAS-SELECT VOLTAGE (single supply) 0.01 µF Figure 106. Bias Selection for Single-Supply Applications 58 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION input characteristics The TLC271 is specified with a minimum and a maximum input voltage that, if exceeded at either input, could cause the device to malfunction. Exceeding this specified range is a common problem, especially in single-supply operation. Note that the lower range limit includes the negative rail, while the upper range limit is specified at VDD – 1 V at TA = 25°C and at VDD – 1.5 V at all other temperatures. The use of the polysilicon-gate process and the careful input circuit design gives the TLC271 very good input offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage drift in CMOS devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. The offset voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month of operation. Because of the extremely high input impedance and resulting low bias current requirements, the TLC271 is well suited for low-level signal processing; however, leakage currents on printed circuit boards and sockets can easily exceed bias current requirements and cause a degradation in device performance. It is good practice to include guard rings around inputs (similar to those of Figure 101 in the Parameter Measurement Information section). These guards should be driven from a low-impedance source at the same voltage level as the common-mode input (see Figure 107). The inputs of any unused amplifiers should be tied to ground to avoid possible oscillation. noise performance The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage differential amplifier. The low input bias current requirements of the TLC271 results in a very low noise current, which is insignificant in most applications. This feature makes the devices especially favorable over bipolar devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise currents. + (a) NONINVERTING AMPLIFIER VO + VO ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ (b) INVERTING AMPLIFIER VI VO + – VI ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ – VI – ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ (c) UNITY-GAIN AMPLIFIER Figure 107. Guard-Ring Schemes POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 59 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION feedback ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ – VO + Operational amplifier circuits almost always employ feedback, and since feedback is the first prerequisite for oscillation, a little caution is appropriate. Most oscillation problems result from driving capacitive loads and ignoring stray input capacitance. A small-value capacitor connected in parallel with the feedback resistor is an effective remedy (see Figure 108). The value of this capacitor is optimized empirically. Figure 108. Compensation for Input Capacitance electrostatic discharge protection The TLC271 incorporates an internal electrostatic-discharge (ESD) protection circuit that prevents functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care should be exercised, however, when handling these devices as exposure to ESD may result in the degradation of the device parametric performance. The protection circuit also causes the input bias currents to be temperature dependent and have the characteristics of a reverse-biased diode. latch-up Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC271 inputs and output were designed to withstand – 100-mA surge currents without sustaining latchup; however, techniques should be used to reduce the chance of latch-up whenever possible. Internal protection diodes should not by design be forward biased. Applied input and output voltage should not exceed the supply voltage by more than 300 mV. Care should be exercised when using capacitive coupling on pulse generators. Supply transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the supply rails as close to the device as possible. The current path established if latch-up occurs is usually between the positive supply rail and ground and can be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of latch-up occurring increases with increasing temperature and supply voltages. output characteristics ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 2.5 V – VI + The output stage of the TLC271 is designed to sink and source relatively high amounts of current (see Typical Characteristics). If the output is subjected to a short-circuit condition, this high current capability can cause device damage under certain conditions. Output current capability increases with supply voltage. VO CL TA = 25°C f = 1 kHz VI(PP) = 1 V – 2.5 V Figure 109. Test Circuit for Output Characteristics 60 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION output characteristics (continued) All operating characteristics of the TLC271 were measured using a 20-pF load. The devices drive higher capacitive loads; however, as output load capacitance increases, the resulting response pole occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation (see Figures 110, 111, and 112). In many cases, adding some compensation in the form of a series resistor in the feedback loop alleviates the problem. (a) CL = 20 pF, RL = NO LOAD (b) CL = 130 pF, RL = NO LOAD (c) CL = 150 pF, RL = NO LOAD Figure 110. Effect of Capacitive Loads in High-Bias Mode (a) CL = 20 pF, RL = NO LOAD (b) CL = 170 pF, RL = NO LOAD (c) CL = 190 pF, RL = NO LOAD Figure 111. Effect of Capacitive Loads in Medium-Bias Mode (a) CL = 20 pF, RL = NO LOAD (b) CL = 260 pF, RL = NO LOAD (c) CL = 310 pF, RL = NO LOAD Figure 112. Effect of Capacitive Loads in Low-Bias Mode POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 61 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION output characteristics (continued) Although the TLC271 possesses excellent high-level output voltage and current capability, methods are available for boosting this capability, if needed. The simplest method involves the use of a pullup resistor (RP) connected from the output to the positive supply rail (see Figure 113). There are two disadvantages to the use of this circuit. First, the NMOS pulldown transistor, N4 (see equivalent schematic) must sink a comparatively large amount of current. In this circuit, N4 behaves like a linear resistor with an on-resistance between approximately 60 Ω and 180 Ω, depending on how hard the operational amplifier input is driven. With very low values of RP, a voltage offset from 0 V at the output occurs. Secondly, pullup resistor RP acts as a drain load to N4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying the output current. VI ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ VDD – IP RP + I )DDI )OI F L P V R VO + IF P –V IP = Pullup current required by the operational amplifier (typically 500 µA) R2 IL R1 RL Figure 113. Resistive Pullup to Increase VOH 10 kΩ 10 kΩ 0.016 µF 0.016 µF 10 kΩ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 5V – VI TLC271 + BIAS SELECT 10 kΩ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 5V – 10 kΩ TLC271 + BIAS SELECT ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 5V – TLC271 + Low Pass BIAS SELECT High Pass 5 kΩ Band Pass R = 5 kΩ(3/d-1) (see Note A) NOTE B: d = damping factor, I/O Figure 114. State-Variable Filter 62 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION output characteristics (continued) VO (see Note A) 9V 10 kΩ ÏÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏÏ C = 0.1 µF 9V – 100 kΩ 10 kΩ BIAS SELECT 9V – TLC271 + ÏÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏÏ R2 VO (see Note B) TLC271 + BIAS SELECT F O 1 + 4C(R2) ƪƫ R1 R3 R1, 100 kΩ R3, 47 kΩ NOTES: A. VO(PP) = 8 V B. VO(PP) = 4 V Figure 115. Single-Supply Function Generator POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 63 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION (HIGH-BIAS MODE) ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 5V – VI – 10 kΩ 100 kΩ TLC271 + BIAS SELECT ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 5V –5 V – TLC271 + ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 5V VO BIAS SELECT 10 kΩ –5 V – 10 kΩ 95 kΩ TLC271 + VI + BIAS SELECT R1, 10 kΩ (see Note A) –5 V NOTE A: CMRR adjustment must be noninductive. Figure 116. Low-Power Instrumentation Amplifier ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 5V – R 10 MΩ R 10 MΩ TLC271 + VI 2C 540 pF VO BIAS SELECT f NOTCH + 2p1RC R/2 5 MΩ C 270 pF C 270 pF Figure 117. Single-Supply Twin-T Notch Filter 64 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION (HIGH-BIAS MODE) VI (see Note A) 1.2 kΩ 100 kΩ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 4.7 kΩ – TL431 20 kΩ 0.47 µF 1 kΩ TLC271 0.1 µF + TIP31 15 Ω BIAS SELECT TIS 193 250 µF, 25 V VO (see Note B) – 10 kΩ 47 kΩ 22 kΩ + 110 Ω 0.01 µF NOTES: A. VI = 3.5 to 15 V B. VO = 2.0 V, 0 to 1 A Figure 118. Logic-Array Power Supply ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 12 V VI – – TLC271 + ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 12 V H.P. 5082-2835 BIAS SELECT TLC271 0.5 µF Mylar N.O. Reset + VO BIAS SELECT 100 kΩ Figure 119. Positive-Peak Detector POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 65 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION (MEDIUM-BIAS MODE) 1N4148 470 kΩ 100 kΩ 5V ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ – 47 kΩ TLC271 100 kΩ + VO BIAS SELECT 2.5 V R2 68 kΩ 1 µF 100 kΩ R1 68 kΩ C2 2.2 nF C1 2.2 nF NOTES: A. VO(PP) = 2 V B. fo 1 + 2p ǸR1R2C1C2 Figure 120. Wein Oscillator 5V 0.01 µF 1 MΩ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ – VI 0.22 µF VO TLC271 + 1 MΩ BIAS SELECT 2.5 V 100 kΩ 100 kΩ 10 kΩ 0.1 µF Figure 121. Single-Supply AC Amplifier 66 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION (MEDIUM-BIAS MODE) 5V Gain Control 1 MΩ (see Note A) 1 µF – + ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 100 kΩ 1 µF – 0.1 µF – + 10 kΩ + – TLC271 BIAS SELECT + 1 kΩ 100 kΩ 2.5 V 100 kΩ NOTE A: Low to medium impedance dynamic mike Figure 122. Microphone Preamplifier 10 MΩ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ VDD 1 kΩ – TLC271 + 15 nF ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ VDD – VO TLC271 BIAS SELECT VDD / 2 VREF 150 pF + BIAS SELECT VDD / 2 100 kΩ NOTES: A. NOTES: VDD = 4 V to 15 V B. Vref = 0 V to VDD – 2 V Figure 123. Photo-Diode Amplifier With Ambient Light Rejection ÏÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏÏ ÏÏÏÏÏ 5V VI IS + TLC271 – BIAS SELECT 2N3821 2.5 V R NOTES: A. VI = 0 V TO 3 V V I B. I S R + Figure 124. Precision Low-Current Sink POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 67 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION (LOW-BIAS MODE) ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ VDD + VI BIAS SELECT TLC271 VI – VDD S1 C A Select AV S1 S2 10 S2 100 C A 90 kΩ X1 TLC4066 1 B 1 9 kΩ X2 Analog Switch 2 2 B 1 kΩ NOTE A: VDD = 5 V to 12 V Figure 125. Amplifier With Digital Gain Selection 5V ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ + BIAS SELECT TLC271 500 kΩ VO1 – 5V 500 kΩ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ BIAS SELECT + VO2 TLC271 – 0.1 µF 500 kΩ 500 kΩ Figure 126. Multivibrator 68 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 APPLICATION INFORMATION (LOW-BIAS MODE) 10 kΩ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ VDD 20 kΩ BIAS SELECT + VI VO TLC271 – 100 kΩ NOTE A: VDD = 5 V to 16 V Figure 127. Full-Wave Rectifier 10 kΩ ÏÏÏ ÏÏÏ ÏÏÏ ÏÏÏ VDD 100 kΩ Set 100 kΩ Reset BIAS SELECT + TLC271 – 33 Ω NOTE A: VDD = 5 V to 16 V Figure 128. Set/Reset Flip-Flop 0.016 µF ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ ÏÏÏÏ 5V 10 kΩ 10 kΩ + VI 0.016 µF BIAS SELECT TLC271 VO – NOTE A: Normalized to FC = 1 kHz and RL = 10 kΩ Figure 129. Two-Pole Low-Pass Butterworth Filter POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 69 PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TLC271ACD ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 271AC Samples TLC271ACDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 271AC Samples TLC271ACP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC271ACP Samples TLC271ACPS ACTIVE SO PS 8 80 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P271A Samples TLC271ACPSR ACTIVE SO PS 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P271A Samples TLC271AID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 271AI Samples TLC271AIDG4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 271AI Samples TLC271AIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 271AI Samples TLC271AIP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC271AIP Samples TLC271BCD ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 271BC Samples TLC271BCDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 271BC Samples TLC271BCP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC271BCP Samples TLC271BCPS ACTIVE SO PS 8 80 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P271B Samples TLC271BID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 271BI Samples TLC271BIDG4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 271BI Samples TLC271BIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 271BI Samples TLC271BIP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC271BIP Samples TLC271CD ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 271C Samples TLC271CDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 271C Samples TLC271CP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC271CP Samples Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2022 Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TLC271CPS ACTIVE SO PS 8 80 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P271 Samples TLC271CPSR ACTIVE SO PS 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P271 Samples TLC271CPW ACTIVE TSSOP PW 8 150 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P271 Samples TLC271CPWR ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P271 Samples TLC271CPWRG4 ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P271 Samples TLC271ID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 271I Samples TLC271IDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 271I Samples TLC271IP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC271IP Samples TLC271MDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 125 271M Samples TLC271MDRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -55 to 125 271M Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of