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TLE4275QKVURQ1

TLE4275QKVURQ1

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    TO252-5

  • 描述:

    IC REG LDO 5V 0.45A TO252-5

  • 数据手册
  • 价格&库存
TLE4275QKVURQ1 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents TLE4275-Q1 SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 TLE4275-Q1 5-V Low-Dropout Voltage Regulator 1 Features • • • • • • • • 1 The input capacitor, CIN, compensates for line fluctuation. Using a resistor of approximately 1 Ω in series with CIN dampens the oscillation of input inductance and input capacitance. The output capacitor, COUT, stabilizes the regulation circuit. The specification for stability is at COUT ≥ 22 μF and ESR ≤ 5 Ω, within the operating temperature range. Stability for electrolytic capacitors specifically is at COUT ≥ 68 µF within the operating temperature range. See the application report on low-temperature stability, SLVA501, for further details. Qualified for Automotive Applications Output Voltage 5 V ± 2% Very Low Current Consumption Power-On and Undervoltage Reset Reset Low-Level Output Voltage < 1 V Very Low Dropout Voltage Short-Circuit Proof Reverse-Polarity Proof The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor through a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The device also incorporates a number of internal circuits for protection against: overload, overtemperature, and reverse polarity. 2 Applications • • • • Qualified for Automotive Applications Cluster Body Control Modules Heating Ventilation and Air Conditioning (HVAC) 3 Description Device Information(1) The TLE4275-Q1 is a monolithic integrated lowdropout voltage regulator offered in a 5-pin TO package. The device regulates an input voltage up to 45 V to VOUT = 5 V (typical). The device can drive loads up to 450 mA and is short-circuit proof. At overtemperature, the incorporated temperature protection turns off the TLE4275-Q1. The device generates a reset signal for an output voltage, VOUT,rt, of 4.65 V (typical). By the use of an external delay capacitor, one can program the reset delay time. PART NUMBER TLE4275-Q1 PACKAGE BODY SIZE (NOM) DDPAK/TO-263 (5) 10.16 mm × 8.42 mm TO-252 (5) 6.10 mm × 6.60 mm HTSSOP (20) 6.50 mm × 4.40 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. 4 Typical Application TLE4275 Vbat Vout OUT IN C1 C3 RESET DELAY C2 R1 GND 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA. TLE4275-Q1 SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 9 Features .................................................................. Applications ........................................................... Description ............................................................. Typical Application ................................................ Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 1 2 3 4 7.1 7.2 7.3 7.4 7.5 7.6 7.7 4 4 4 4 5 5 7 Absolute Maximum Ratings ..................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Switching Characteristics .......................................... Typical Characteristics .............................................. Parameter Measurement Information ................ 10 Detailed Description ............................................ 11 9.1 Overview ................................................................. 11 9.2 Functional Block Diagram ....................................... 11 9.3 Feature Description................................................. 12 9.4 Device Functional Modes........................................ 12 10 Application and Implementation........................ 13 10.1 Application Information.......................................... 13 10.2 Typical Application ............................................... 13 11 Power Supply Recommendations ..................... 15 12 Layout................................................................... 15 12.1 Layout Guidelines ................................................. 15 12.2 Layout Example .................................................... 15 13 Device and Documentation Support ................. 16 13.1 13.2 13.3 13.4 Documentation Support ........................................ Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 16 16 16 16 14 Mechanical, Packaging, and Orderable Information ........................................................... 16 5 Revision History Changes from Revision H (March 2013) to Revision I Page • Added Applications, Pin Configuration and Functions section, Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................................................................................................... 1 • Changed KTT values in Thermal Information table ............................................................................................................... 4 Changes from Revision G (January 2013) to Revision H • Deleted row for θJA from Absolute Maximum Ratings table ................................................................................................... 4 Changes from Revision F (May 2011) to Revision G • 2 Page Page Updated Pin Functions table with PWP package pin information. ......................................................................................... 3 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 TLE4275-Q1 www.ti.com SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 6 Pin Configuration and Functions Pin Functions KTT Package 5-Pin DDPAK/TO-263 Top View GND 5 4 3 2 1 PIN NO. TY NA PE KT KV PW ME T U P OUT DELAY GND RESET IN KVU Package 5-Pin TO-252 Top View GND 5 4 3 2 1 OUT DELAY GND RESET IN PWP Package 20-Pin HTSSOP With Exposed Thermal Pad Top View RESET 1 20 NC NC 2 19 IN DELAY 3 18 NC OUT 4 17 NC NC 5 16 NC NC 6 15 NC NC 7 14 NC GND 8 13 NC NC 9 12 NC NC 10 11 NC Thermal Pad DESCRIPTION DEL AY 4 4 3 O Reset delay. Connect to ground with a capacitor to set delay time. GN D 3 3 8 O Ground. Internally connected to heatsink IN 1 1 19 I Input. Connect to ground as close to device as possible, through a ceramic capacitor. 2, 5–7, 9–1 — Not connected 8, 20 NC — — OU T 5 5 4 O Output. Connect to ground with ≥ 22µF capacitor, ESR < 5 Ω at 10 kHz. RE SET 2 2 1 I Reset output. Open-collector output Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 3 TLE4275-Q1 SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN MAX IN –42 45 DELAY –0.3 7 –1 16 –0.3 25 UNIT VI Input voltage range (2) VO Output voltage range II Input current DELAY ±2 mA IO Output current RESET ±5 mA TJ Operating junction temperature –40 150 °C Tstg Storage temperature –65 150 °C (1) (2) OUT RESET V V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the network ground terminal. 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per AEC Q100-002 (1) 6000 Machine model (MM) (2) 400 UNIT V AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification. MM ESD rating tested per JESD22-A115. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX VI Input voltage 5.5 42 UNIT V TJ Junction temperature –40 150 °C 7.4 Thermal Information TLE4275-Q1 THERMAL METRIC (1) KTT KVU PWP 5 PINS 5 PINS 20 PINS RθJA Junction-to-ambient thermal resistance 32.8 40.3 39.3 RθJC(top) Junction-to-case (top) thermal resistance 38.0 31.8 22.7 RθJB Junction-to-board thermal resistance 5.3 17.2 19.1 ψJT Junction-to-top characterization parameter 6.3 2.8 0.6 ψJB Junction-to-board characterization parameter 5.4 17.1 18.9 RθJC(bot) Junction-to-case (bottom) thermal resistance 0.8 0.7 1.5 (1) 4 UNIT °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report (SPRA953) . Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 TLE4275-Q1 www.ti.com SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 7.5 Electrical Characteristics over recommended operating free-air temperature range, VI = 13.5 V, TJ = −40°C to 150°C (unless otherwise noted) (see Figure 18) PARAMETER VO Output voltage IO Output current limit MIN TYP MAX IO = 5 mA to 400 mA, VI = 6 V to 28 V TEST CONDITIONS 4.9 5 5.1 IO = 5 mA to 200 mA, VI = 6 V to 40 V 4.9 5 5.1 450 700 950 150 200 TJ ≤ 85°C 150 220 IO = 250 mA 5 10 IO = 400 mA 12 22 250 500 mV 15 30 mV 5 15 mV Dropout voltage (1) IO = 300 mA, Vdo = VI − VO Load regulation IO = 5 mA to 400 mA Line regulation ΔVI = 8 V to 32 V, IO = 5 mA PSRR Power-supply ripple rejection fr = 100 Hz, Vr = 0.5 Vpp DVO DT Temperature output-voltage drift VO,rt RESET switching threshold VROL RESET output low voltage Rext ≥ 5 kΩ, VO > 1 V IROH RESET output leakage current VROH = 5 V ID,c RESET charging current VD = 1 V VDU VDRL VDO (1) V TJ = 25°C IO = 1 mA Current consumption, Iq = II − IO Iq UNIT –15 4.5 mA μA mA 60 dB 0.5 mV/K 4.65 4.8 V 0.2 0.4 V 0 10 μA 3 5.5 9 μA RESET upper timing threshold 1.5 1.8 2.2 V RESET lower timing threshold 0.2 0.4 0.7 V TYP MAX 16 22 ms 0.5 2 µs Measured when the output voltage VO has dropped 100 mV from the nominal value obtained at VI = 13.5 V 7.6 Switching Characteristics over operating free-air temperature range (unless otherwise noted) (see Figure 1) PARAMETER TEST CONDITIONS trd RESET delay time CD = 47 nF trr RESET reaction time CD = 47 nF MIN 10 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 UNIT 5 TLE4275-Q1 SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 www.ti.com VI t < trr VO VQ,rt d∆V = ID,c d∆T CD VD t VDU VDRL trr trd t VRO t Power-On Reset Thermal Shutdown Voltage Dip at Input Undervoltage Secondary Overload Spike at Output Figure 1. Reset Timing Diagram 6 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 TLE4275-Q1 www.ti.com SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 7.7 Typical Characteristics 5.3 5.3 5.2 5.2 5.1 5.1 Output Voltage (V) Output Voltage (V) At TA = 25ºC 5 4.9 4.8 4.7 5 4.9 4.8 4.7 4.6 -45 -5 35 75 115 Junction Temperature (qC) 4.6 -45 155 -5 35 75 115 Junction Temperature (qC) D011 VI = 6 V 1200 11 1100 10 1000 9 900 Output Current (mA) Output Voltage (V) Figure 3. Output Voltage vs Junction Temperature 12 8 7 6 5 4 3 800 700 600 500 400 300 2 200 1 100 0 1 2 3 4 5 6 7 Input Voltage (V) 8 9 0 -45 10 -5 35 75 115 Junction Temperature (qC) D013 Figure 4. Output Voltage vs Input Voltage 155 D002 Figure 5. Output Current vs Junction Temperature 3.5 12 11 Current Consumption (mA) 3 Iq – Current Consumption (mA) D012 VI = 28 V Figure 2. Output Voltage vs Junction Temperature 0 155 2.5 2 1.5 1 0.5 10 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 0 0 Output Current (mA) VI = 13.5 V 50 100 150 200 250 300 350 400 Output Current (mA) D003 VI = 13.5 V Figure 6. Current Consumption vs Output Current Figure 7. Current Consumption vs Output Current Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 7 TLE4275-Q1 SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 www.ti.com Typical Characteristics (continued) 800 8 700 7 600 6 Charge Current (PA) Dropout Voltage (mV) At TA = 25ºC 500 400 300 200 0 100 200 300 400 Output Current (mA) 500 2 -5 35 75 115 Junction Temperature (qC) D009 TJ = 25°C VI = 13.5 V Figure 8. Dropout Voltage (Vdo) vs Output Current 155 D001 VD = 1 V Figure 9. Charge Current (ID,C) vs Junction Temperature 100 4 VDU VDRL 3.5 90 80 3 Ripple Rejection (dB) Delay Switching Threshold (V) 3 0 -45 0 2.5 2 1.5 1 70 60 50 40 30 20 0.5 0 -45 10 -5 35 75 115 Junction Temperature (qC) 0 10 20 50 100 155 D009 VI = 13.5 V VI = 13.5 V Figure 10. Delay Switching Threshold vs Junction Temperature 100 100 90 90 80 80 70 60 50 40 30 50 40 30 20 10 VI = 13.5 V Load = 200 mA 100000 0 10 100 D005 COUT = 22 µF Figure 12. Power-Supply Ripple Rejection vs Frequency D004 COUT = 22 µF 60 10 1000 10000 Frequency (Hz) Load = 1 mA 100000 70 20 0 10 20 50 100 1000 10000 Frequency (Hz) Figure 11. Power-Supply Ripple Rejection vs Frequency Ripple Rejection (dB) Ripple Rejection (dB) 4 1 100 8 5 VI = 13.5 V 1000 10000 Frequency (Hz) Load = 400 mA 100000 D006 COUT = 22 µF Figure 13. Power-Supply Ripple Rejection vs Frequency Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 TLE4275-Q1 www.ti.com SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 Typical Characteristics (continued) At TA = 25ºC 90 Junction-to-Ambient Thermal Resistance (qC/W) on 736 mm 2 80 Junction-to-Ambient Thermal Resistance (qC/W) 100 50 1-oz Copper 2-oz Copper 70 60 50 40 30 200 400 600 800 1000 1200 Copper Land-Pad Area (mm2) 1400 2 1 0.5 50% Duty Cycle 20% Duty Cycle 10% Duty Cycle 5% Duty Cycle 2% Duty Cycle 1% Duty Cycle 0.5% Duty Cycle 0.2% Duty Cycle Non-Normalized Response 0.2 0.1 0.05 0.02 0.01 1x10-6 1x10-5 1x10-4 1x10-3 1x10-2 1x10-1 1x100 1x101 1x102 1x103 Pulse-Width Time (s) D008 20 0 20 10 5 1600 D007 Figure 14. Thermal Resistance vs Copper Land Pad Area (JEDEC 51-3 Low-K Board) Figure 15. Thermal Resistance vs Pulse Width Time for Various Duty Cycles Stable Region ESR (Ω) ESR (Ω) Unstable Region Stable Region Unstable Region Load Capacitance (µF) Load Capacitance (µF) Figure 16. ESR Stability vs Load Current Figure 17. ESR Stability vs Load Capacitance Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 9 TLE4275-Q1 SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 www.ti.com 8 Parameter Measurement Information II IN CI2 100 nF CI1 1000 µF 1 5 IO OUT COUT 22 µF Rext 5 kΩ IRO DELAY VI ID,d ID,c 4 2 3 RESET GND IGND VD VO VRO CD 47 nF Figure 18. Test Circuit 10 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 TLE4275-Q1 www.ti.com SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 9 Detailed Description 9.1 Overview The TLE4275-Q1 device is a monolithic integrated low-dropout voltage regulator offered in a 5-pin TO package. The device regulates an input voltage up to 45 V to VOUT = 5 V (typical). The device can drive loads up to 450 mA and is short circuit proof. At over temperature, the incorporated temperature protection turns off the TLE4275-Q1 device. The device generates a reset signal for an output voltage, VOUT,rt, of 4.65 V (typical). By the use of an external delay capacitor, one can program the reset delay time. 9.2 Functional Block Diagram Temperature Sensor Saturation Control and Protection Circuit 1 5 IN OUT Bandgap Reference 4 Reset Generator DELAY 2 RESET 3 GND Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 11 TLE4275-Q1 SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 www.ti.com 9.3 Feature Description 9.3.1 Regulated Output (OUT) The OUT terminal is the regulated 5-V output. The output has current limitation. During initial power up, the regulator has a soft start incorporated to control the initial current through the pass element. In the event that the regulator drops out of regulation, the output tracks the input minus a drop based on the load current. 9.3.2 Power-On-Reset (RESET) The power-on-reset is an output with an external pull up resistor to the regulated supply. The reset output remains low until the regulated VO exceeds approximately 4.65 V and the power-on-reset delay has expired. 9.3.3 Reset Delay Timer (DELAY) An external capacitor on this terminal sets the timer delay before the reset terminal is asserted high. The constant output current charges an external capacitor until the voltage exceeds a threshold to trip an internal comparator. The reset pulse delay time td, is defined with the charge time of an external capacitor DELAY. Cdelay ´ VDU td = I D,c (1) 9.4 Device Functional Modes 9.4.1 Low-Voltage Tracking At low input voltages, the regulator drops out of regulation and the output voltage tracks input minus a voltage based on the load current (IO) and switch resistance (R(SW)). This allows for a smaller input capacitor and can possibly eliminate the need of using a boost convertor during cold-crank conditions. 12 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 TLE4275-Q1 www.ti.com SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 10 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 10.1 Application Information Figure 19 shows typical application circuits for the TLE4275-Q1. Based on the end-application, different values of external components can be used. An application can require a larger output capacitor during fast load steps in order to prevent a reset from occurring. TI recommends a low-ESR ceramic capacitor with a dielectric of type X5R or X7R for better load transient response. 10.2 Typical Application TLE4275 Vbat Vout OUT IN C1 C3 RESET DELAY C2 R1 GND Figure 19. Typical Application Diagram 10.2.1 Design Requirements For this design example, use the parameters listed in Table 1. Table 1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Input voltage range 4 to 40 V Output voltage 5V Output current rating 400 mA Output capacitor range 10 to 500 µF Output capacitor ESR range 1 mΩ to 20 Ω DELAY capacitor range 100 pF to 500 nF Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 13 TLE4275-Q1 SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 www.ti.com 10.2.2 Detailed Design Procedure To • • • • • begin the design process, determine the following: Input voltage range Output voltage Output current rating Output capacitor Power-up reset delay time 10.2.2.1 Power-Up Reset Capacitance To calculate the power-up reset capacitance, use Equation 2. Cdelay ´ VDU td = I D,c Cdelay t d = t d ´ I D,c VDU = t d ´ 5.5 ´ 10-6 1.8 (2) 10.2.2.2 Thermal Consideration Calculate the power dissipated by the device according to Equation 3. PT = IO × (VI – VO) + VI × IQ where • • • • PT = Total power dissipation of the device. IO = output current VI = input voltage VO = output voltage (3) After determining the power dissipated by the device, calculate the junction temperature from the ambient temperature and the device thermal impedance. TJ = TA + RθJA × PT (4) 10.2.3 Application Curves Load = 200 mA, Cin = 22 µF, Cout = 10 µF CH1:Vout, CH2: Vin, CH3: Vreset. Figure 20. Power Up Waveform 14 CH1:Vout, CH2: Vin, CH3: Vreset. Figure 21. Power Down Waveform Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 TLE4275-Q1 www.ti.com SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 11 Power Supply Recommendations The device is designed to operate from an input voltage supply range between 4 V and 40 V. This input supply must be well regulated. If the input supply is located more than a few inches from the TLE4275-Q1 device, an electrolytic capacitor with a value of 47 µF and a ceramic bypass capacitor are recommended to add at the input. 12 Layout 12.1 Layout Guidelines • • Do not place any of the capacitors on the opposite side of the PCB from where the regulator is installed. The use of vias and long traces is strongly discouraged because of the negative impact on system performance. Vias and long traces can also cause instability. Equivalent series inductance (ESL) and ESR must be minimized in order to maximize performance and ensure stability. Every capacitor must be placed as close to the device as possible and on the same side of the PCB as the regulator. 12.2 Layout Example 180 RESET NC NC IN DELAY NC OUT NC NC NC NC NC NC NC GND NC Connect through bottom layer Vin Power Ground Output filter capacitor, place close to chip Vout Input bypass capacitor Power Ground NC NC NC NC Figure 22. TLE4275-Q1 HTSSOP Layout Design Example Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 15 TLE4275-Q1 SLVS647I – AUGUST 2006 – REVISED NOVEMBER 2014 www.ti.com 13 Device and Documentation Support 13.1 Documentation Support 13.1.1 Related Documentation For related documentation see the following: TLE4275-Q1 Low Temperature Stability, SLVA501 13.2 Trademarks All trademarks are the property of their respective owners. 13.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 13.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 14 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 16 Submit Documentation Feedback Copyright © 2006–2014, Texas Instruments Incorporated Product Folder Links: TLE4275-Q1 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TLE4275QKTTRQ1 ACTIVE DDPAK/ TO-263 KTT 5 500 RoHS & Green SN Level-3-245C-168 HR -40 to 125 TLE4275Q TLE4275QKVURQ1 ACTIVE TO-252 KVU 5 2500 RoHS & Green SN Level-3-260C-168 HR -40 to 125 TLE4275Q TLE4275QPWPRQ1 ACTIVE HTSSOP PWP 20 2000 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 TLE4275Q (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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TLE4275QKVURQ1
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    TLE4275QKVURQ1
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