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TLV62565DBVT

TLV62565DBVT

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    SOT23-5

  • 描述:

    IC REG BUCK ADJ 1.5A SOT23-5

  • 数据手册
  • 价格&库存
TLV62565DBVT 数据手册
Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TLV62565, TLV62566 SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 TLV6256x 1.5-A High Efficiency Step-Down Converters in SOT-23 5-Pin Package 1 Features 3 Description • • • • • • • • • • • • • • • The TLV62565/6 devices are synchronous step-down converters optimized for small solution size and high efficiency. The devices integrate switches capable of delivering an output current up to 1.5 A. 1 2.7-V to 5.5-V Input Voltage Range 1.5-MHz Typical Switching Frequency Output Current up to 1.5 A (Max) Adaptive On-Time Current Control Power Save Mode for Light Load Efficiency 50-µA Operating Quiescent Current Up to 95% Efficiency Over Current Protection 95% Maximum Duty Cycle Excellent AC and Transient Load Response Power Good Output, TLV62566 Internal Soft Startup of 250 µs (Typ) Adjustable Output Voltage Thermal Shutdown Protection Available in SOT-23 5-Pin Package The devices are based on an adaptive on time with valley current mode control scheme. Typical operating frequency is 1.5 MHz at medium to heavy loads. The devices are optimized to achieve very low output voltage ripple even with small external components and feature an excellent load transient response. During light load, the TLV62565/6 automatically enter into Power Save Mode at the lowest quiescent current (50 μA typ) to maintain high efficiency over the entire load current range. In shutdown, the current consumption is reduced to less than 1 μA. The TLV62565/6 provide an adjustable output voltage via an external resistor divider. The output voltage start-up ramp is controlled by an internal soft start, typically 250 µs. Power sequencing is possible by configuring the Enable (TLV62565) and Power Good (TLV62566) pins. Other features like over current protection and over temperature protection are builtin. The TLV62565/6 devices are available in a SOT23 5-pin package. 2 Applications • • • • • Portable Devices DSL Modems Hard Disk Drivers Set Top Box Tablet Device Information(1) PART NUMBER TLV62565 TLV62566 PACKAGE BODY SIZE (NOM) SOT-23 (5) 2.90 mm × 2.80 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. 4 Simplified Schematic L1 2.2 µH VIN VIN 2.7 V to 5.5 V C1 4.7 µF EN FB GND Efficiency vs Load Current VOUT SW R1 240 kΩ C2 10 µF 1.8 V 100 80 TLV62565 70 Efficiency [%] Copyright © 2016, Texas Instruments Incorporated VOUT=1. 8V 90 R2 120 kΩ 60 50 40 30 VVin=2.7V IN=2.7V 20 VVin=3.6V IN=3.6V 10 VVin=5.5V IN=5.5V 0 10µ 100µ 1m 10m Load current [A] 100m 1 C001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TLV62565, TLV62566 SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 9 Features .................................................................. Applications ........................................................... Description ............................................................. Simplified Schematic............................................. Revision History..................................................... Device Comparison Table..................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 1 2 3 3 4 8.1 8.2 8.3 8.4 8.5 8.6 4 4 4 4 5 6 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions ...................... Thermal Information .................................................. Electrical Characteristics.......................................... Typical Characteristics .............................................. Detailed Description .............................................. 7 9.1 9.2 9.3 9.4 Overview ................................................................... Functional Block Diagrams ....................................... Feature Description................................................... Device Functional Modes.......................................... 7 7 8 9 10 Application and Implementation........................ 10 10.1 Application Information.......................................... 10 10.2 Typical Application ................................................ 10 11 Power Supply Recommendations ..................... 15 12 Layout................................................................... 16 12.1 Layout Guidelines ................................................. 16 12.2 Layout Example .................................................... 16 12.3 Thermal Considerations ........................................ 16 13 Device and Documentation Support ................. 17 13.1 13.2 13.3 13.4 13.5 13.6 13.7 13.8 Device Support...................................................... Documentation Support ....................................... Related Links ........................................................ Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 17 17 17 17 17 17 17 18 14 Mechanical, Packaging, and Orderable Information ........................................................... 18 5 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision C (July 2015) to Revision D Page • Added typical value of valley current limit for the ILIM,LS spec................................................................................................. 5 • Added typical value of peak current limit for the ILIM,HS spec.................................................................................................. 5 • Updated Power Save Mode description ................................................................................................................................ 8 • Updated Switch Current Limit description ............................................................................................................................. 9 • Updated maximum output voltage setting in the Setting the Output Voltage section .......................................................... 12 • Added Receiving Notification of Documentation Updates section. ...................................................................................... 17 Changes from Revision B (December 2014) to Revision C • Page Changed device From: TLV62566 to TLV62565 for EN in the Device Comparison Table ................................................... 3 Changes from Revision A (November 2014) to Revision B Page • Added Storage temperature to Absolute Maximum Ratings .................................................................................................. 4 • Changed Handling Ratings to ESD Ratings........................................................................................................................... 4 • Deleted Storage temperature from ESD Ratings ................................................................................................................... 4 • Changed Thermal Information to Thermal Considerations and moved to Layout section ................................................... 16 Changes from Original (October 2013) to Revision A Page • Changed Added Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section................................................................ 1 • Added "TA = -40°C to 85°C" to the VFB, Feedback regulation voltage Test Conditions ........................................................ 5 • Added VFB, Feedback regulation voltage Test Conditions and values for "PWM operation, TA = 85°C"............................... 5 2 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 TLV62565, TLV62566 www.ti.com SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 6 Device Comparison Table PART NUMBER FUNCTION TLV62565 EN TLV62566 PG 7 Pin Configuration and Functions 5-Pin SOT-23 DBV Package (Top View) FB VIN 5 4 1 2 3 EN/PG GND SW Pin Functions PIN NAME NUMBER I/O/PWR DESCRIPTION TLV62565 TLV62566 EN 1 — I Device enable logic input. Logic HIGH enables the device, logic low disables the device and turns it into shutdown. Do not leave floating. FB 5 5 I Feedback pin for the internal control loop. Connect this pin to the external feedback divider. GND 2 2 PWR PG — 1 O SW 3 3 PWR Switch pin connected to the internal MOSFET switches and inductor terminal. Connect the inductor of the output filter to this pin. VIN 4 4 PWR Power supply voltage input. Ground pin. Power Good open drain output. This pin is high impedance if the output voltage is within regulation. It is pulled low if the output is below its nominal value. It is also low when VIN is below UVLO or thermal shutdown triggers. Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 Submit Documentation Feedback 3 TLV62565, TLV62566 SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com 8 Specifications 8.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted) (1) Voltage (2) Sink current, IPG MIN MAX UNIT VIN, EN, PG –0.3 7 V SW –0.3 VIN+0.3 V FB –0.3 3.6 V 660 µA PG Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –65 150 °C (1) (2) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. 8.2 ESD Ratings Electrostatic discharge V(ESD) (1) (2) Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) Charged-device model (CDM), per JEDEC specification JESD22-C101 VALUE UNIT ±2000 V ±500 V (2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 8.3 Recommended Operating Conditions (1) MIN TYP MAX UNIT VIN Input voltage, VIN 2.7 5.5 V TA Operating ambient temperature –40 85 °C (1) Refer to the Application and Implementation section for further information. 8.4 Thermal Information TLV62565, TLV62566 THERMAL METRIC (1) DBV (5 Pins) UNIT RθJA Junction-to-ambient thermal resistance 208.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 73.7 °C/W RθJB Junction-to-board thermal resistance 36.1 °C/W ψJT Junction-to-top characterization parameter 2.3 °C/W ψJB Junction-to-board characterization parameter 35.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W (1) 4 For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 TLV62565, TLV62566 www.ti.com 8.5 SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 Electrical Characteristics VIN = 3.6 V, TA = -40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VIN Input voltage IQ Quiescent current into VIN pin IOUT = 0 mA, Not switching 50 Under voltage lock out VIN falling 2.2 VUVLO TJSD 2.7 Under voltage lock out hysteresis 5.5 2.3 200 Thermal shutdown Junction temperature rising Thermal shutdown hysteresis Junction temperature falling below TJSD V uA V mV 150 °C 20 LOGIC INTERFACE, TLV62565 VIH High-level input voltage 2.7 V ≤ VIN ≤ 5.5 V VIL Low-level input voltage 2.7 V ≤ VIN ≤ 5.5 V ISD Shutdown current into VIN pin EN = LOW IEN,LKG EN leakage current 1.2 V 0.4 V 0.1 1 µA 0.01 0.16 µA POWER GOOD, TLV62566 VPG Power Good low threshold VFB falling referenced to VFB nominal 90% 95% Power Good high threshold⋁ VFB risng referenced to VFB nominal VL Low level voltage Isink = 500 µA IPG,LKG PG Leakage current VPG = 5.0 V 0.01 0.4 V 0.17 µA OUTPUT VOUT VFB Output voltage 0.6 Feedback regulation voltage PWM operation, TA = -40°C to 85°C 0.588 PWM operation, TA = 85°C 0.594 PFM comparator threshold IFB RDS(on) DMAX.VIN V 0.6 0.612 V 0.6 0.606 V 100 nA 0.9% Feedback input bias current VFB = 0.6 V High-side FET on resistance ISW = 500 mA, VIN = 3.6 V 173 10 Low-side FET on resistance ISW = 500 mA, VIN = 3.6 V 105 mΩ ILIM,LS Low-side FET valley current limit 1.5 1.7 A ILIM,HS High-side FET peak current limit 1.8 2.0 A fSW Switching frequency 1.5 MHz DMAX Maximum duty cycle 95% tOFF,MIN Minimum off time 40 Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 Submit Documentation Feedback ns 5 TLV62565, TLV62566 SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com 8.6 Typical Characteristics 300 100 VOUT = 0.6V 80 70 60 50 40 Ta=-40° C T A=±40°C 30 Ta=25° C T A=25°C 20 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Input Voltage [V] 260 C TTa=25° A=25°C 240 TTa=85° C A=85°C 220 200 180 160 140 120 Ta=85° C T A=85°C 10 C TTa=-40° A=±40°C Load = 0.5A 280 HS Mos Resistance [m @ Quiescent current [µA] 90 100 2.5 6.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage [V] C009 C007 Figure 1. Quiescent Current vs Input Voltage Figure 2. High-Side FET RDS(on) vs Input Voltage LS Mos Resistance [m @ 190 C TTa=-40° A=±40°C Load = 0.5A TTa=25° A=25°CC 170 TTa=85° A=85°CC 150 130 110 90 70 50 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Input Voltage [V] 6.0 C008 Figure 3. Low-Side FET RDS(on) vs Input Voltage 6 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 TLV62565, TLV62566 www.ti.com SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 9 Detailed Description 9.1 Overview The TLV62565/6 device family includes two high-efficiency synchronous step-down converters. Each device operates with an adaptive on-time control scheme, which is able to dynamically adjust the on-time duration based on the input voltage and output voltage so that it can achieve relative constant frequency operation. The device operates at typically 1.5-MHz frequency pulse width modulation (PWM) at moderate to heavy load currents. Based on the VIN/VOUT ratio, a simple circuit sets the required on time for the high-side MOSFET. It makes the switching frequency relatively constant regardless of the variation of input voltage, output voltage, and load current. At the beginning of each switching cycle, the high-side switch is turned on and the inductor current ramps up to a peak current that is defined by on time and inductance. In the second phase, once the on time expires, the high-side switch is turned off while the low-side switch is turned on. The current through the inductor then decays until triggering the valley current level determined by the output of the error amplifier. Once this occurs, the on timer is set to turn the high-side switch back on again and the cycle is repeated. The TLV62565/6 device family offers excellent load transient response with a unique fast response constant ontime valley current mode. The switching frequency changes during load transition so that the output voltage comes back in regulation faster than a traditional fixed PWM control scheme. Internal loop compensation is integrated which simplifies the design process while minimizing the number of external components. At light load currents the device automatically operates in Power Save Mode with pulse frequency modulation (PFM). 9.2 Functional Block Diagrams VIN Soft start Thermal Shutdown UVLO Current Limit Detect PMOS Control Logic EN DBG Gate Drive SW NMOS _ FB Pulse Modulator GM Vref SW + Duty Detect DBG Valley Current Detect GND Copyright © 2016, Texas Instruments Incorporated Figure 4. TLV62565 Functional Block Diagram Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 Submit Documentation Feedback 7 TLV62565, TLV62566 SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com Functional Block Diagrams (continued) VIN PG Soft start Thermal Shutdown UVLO Current Limit Detect PMOS Control Logic DBG Gate Drive SW NMOS _ FB Pulse Modulator GM Vref + SW Duty Detect DBG Valley Current Detect GND Copyright © 2016, Texas Instruments Incorporated Figure 5. TLV62566 Functional Block Diagram 9.3 Feature Description 9.3.1 Power Save Mode The device integrates a Power Save Mode with PFM to improve efficiency at light load, as shown in Figure 6 When the inductor current becomes discontinuous, the device enters Power Save Mode. In Power Save Mode, the FB voltage is typically 0.9% higher than the nominal value of 0.6 V. Thus the device ramps up the output voltage with several pulses, and the device stops switching when the output voltage reaches 0.9% above the nominal output voltage. When the inductor current becomes continuous again, the device leaves Power Save Mode and the FB voltage is back to the norminal value of 0.6 V. Output Voltage PFM mode at light load VOUT_PFM PWM mode at medium / heavy load VOUT_NOM t Figure 6. Output Voltage in PFM/PWM Mode 8 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 TLV62565, TLV62566 www.ti.com SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 Feature Description (continued) 9.3.2 Enabling/Disabling the Device The TLV62565 is enabled by setting the EN input to a logic HIGH. Accordingly, a logic LOW disables the device. If the device is enabled, the internal power stage starts switching and regulates the output voltage to the set point voltage. The EN input must be terminated and should not be left floating. 9.3.3 Soft Start After enabling the device, internal soft-start circuitry monotonically ramps up the output voltage which reaches nominal output voltage during a soft-start time of 250 µs (typical). This avoids excessive inrush current and creates a smooth output voltage rise slope. It also prevents excessive voltage drops of primary cells and rechargeable batteries with high internal impedance. If the output voltage is not reached within the soft-start time, such as in the case of a heavy load, the converter enters regular operation. The TLV62565/6 are able to start into a pre-biased output capacitor. The converter starts with the applied bias voltage and ramps the output voltage to its nominal value. 9.3.4 Switch Current Limit The switch current limit prevents the device from high inductor current and drawing excessive current from a battery or input voltage rail. Excessive current might occur with a heavy load or shorted output circuit condition. The TLV62565/6 adopt valley current control by sensing the current of the low-side FET. If the inductor current reaches the low-side FET valley current limit ILIM,LS (typical 1.7 A), the low-side FET is turned off and the highside FET is turned on to ramp up the inductor current. The current ramping up time is controlled by the on time setting of the device, as shown in Figure 7. For example, the peak current is 1.97 A when the switch current limit is triggered with 3.6 VIN to 1.8 VOUT and 2.2-μH application. To prevent the inductor current from running away, the devices implement an additional high-side peak current limit ILIM,HS (typical 2 A), which is shown in Figure 7. It forces to turn off the high side FET immediately once the peak inductor current reaches the threshold. Due to the internal propagation delay, the real current limit value might be higher than the static current limit in the electrical characteristics table. Inductor Current High-side FET peak current limit Peak current at low-side FET valley current limit Maximum load current Low-side FET valley current limit t Figure 7. Switch Current Limit 9.3.5 Power Good The TLV62566 integrates a Power Good output going low when the output voltage is below its nominal value. The Power Good output stays high impedance once the output is above 95% of the regulated voltage and is low once the output voltage falls below typically 90% of the regulated voltage. The PG pin is an open drain output and is specified to sink typically up to 0.5 mA. The Power Good output requires a pull-up resistor connected to any voltage lower than 5.5 V. When the device is off due to UVLO or thermal shutdown, the PG pin is pulled to logic low. 9.4 Device Functional Modes 9.4.1 Under Voltage Lockout To avoid mis-operation of the device at low input voltages, under voltage lockout is implemented that shuts down the device at voltages lower than VUVLO with VHYS_UVLO hysteresis. Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 Submit Documentation Feedback 9 TLV62565, TLV62566 SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com Device Functional Modes (continued) 9.4.2 Thermal Shutdown The device enters thermal shutdown once the junction temperature exceeds typically TJSD. Once the device temperature falls below the threshold with hysteresis, the device returns to normal operation automatically. Power Good is pulled low when thermal protection is triggered. 10 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 10.1 Application Information The TLV6256x devices are synchronous step-down converters optimized for small solution size and high efficiency. The devices integrate switches capable of delivering an output current up to 1.5 A. 10.2 Typical Application TLV62565 2.7-V to 5.5-V input, 1.2-V output converter. L1 2.2 µH VIN VIN 2.7 V to 5.5 V C1 4.7 µF EN VOUT SW FB GND R1 240 kΩ 1.8 V C2 10 µF R2 120 kΩ TLV62565 Copyright © 2016, Texas Instruments Incorporated Figure 8. TLV62565 1.2-V Output Application Table 1. List of Components REFERENCE DESCRIPTION MANUFACTURER C1 4.7 µF, Ceramic Capacitor, 6.3 V, X5R, size 0603, GRM188R60J475ME84 Murata C2 10 µF, Ceramic Capacitor, 6.3 V, X5R, size 0603, GRM188R60J106ME84 Murata L1 2.2 µH, Power Inductor, 2.5 A, size 4mmx4mm, LQH44PN2R2MP0 Murata R1, R2 Chip resistor,1%,size 0603 Std. 10.2.1 Design Requirements 10.2.1.1 Output Filter Design The inductor and output capacitor together provide a low-pass frequency filter. To simplify this process, Table 2 outlines possible inductor and capacitor value combinations. 10 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 TLV62565, TLV62566 www.ti.com SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 Table 2. Matrix of Output Capacitor and Inductor Combinations COUT [µF] (2) L [µH] (1) 4.7 10 (3) 22 47 + (4) + 100 1 2.2 + (4) 4.7 (1) (2) (3) (4) Inductor tolerance and current de-rating is anticipated. The effective inductance can vary by +20% and -30%. Capacitance tolerance and bias voltage de-rating is anticipated. The effective capacitance can vary by +20% and -50%. For low output voltage applications (≤ 1.2 V), more output capacitance is recommended (usually ≥ 22 µF) for smaller ripple. Typical application configuration. '+' indicates recommended filter combinations. 10.2.1.2 Inductor Selection The main parameters for inductor selection is inductor value and then saturation current of the inductor. To calculate the maximum inductor current under static load conditions, Equation 1 is given: DI IL,MAX = IOUT,MAX + L 2 VOUT VIN DIL = VOUT ´ L ´ fSW 1- where: • • • • IOUT,MAX is the maximum output current ΔIL is the inductor current ripple fSW is the switching frequency L is the inductor value (1) It is recommended to choose a saturation current for the inductor that is approximately 20% to 30% higher than IL,MAX. In addition, DC resistance and size should also be taken into account when selecting an appropriate inductor. The recommended inductors are listed in Table 3. Table 3. List of Recommended Inductors INDUCTANCE [µH] CURRENT RATING [mA] DIMENSIONS L x W x H [mm3] DC RESISTANCE [mΩ typ] TYPE MANUFACTURER 2.2 2500 4 x 3.7 x 1.65 49 LQH44PN2R2MP0 Murata 2.2 3000 4 x 4 x 1.8 50 NRS4018T2R2MDGJ Taiyo Yuden 10.2.1.3 Input and Output Capacitor Selection The input capacitor is the low impedance energy source for the converter that helps provide stable operation. The closer the input capacitor is placed to the VIN and GND pins, the lower the switch ring. A low ESR multilayer ceramic capacitor is recommended for best filtering. For most applications, 4.7-µF input capacitance is sufficient; a larger value reduces input voltage ripple. The architecture of the TLV62565/6 allow use of tiny ceramic-type output capacitors with low equivalent series resistance (ESR). These capacitors provide low output voltage ripple and are thus recommended. To keep its resistance up to high frequencies and to achieve narrow capacitance variation with temperature, it is recommended to use X7R or X5R dielectric. The TLV62565/6 are designed to operate with an output capacitance of 10 µF to 47 µF, as outlined in Table 2. Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 Submit Documentation Feedback 11 TLV62565, TLV62566 SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com 10.2.2 Detailed Design Procedure 10.2.2.1 Setting the Output Voltage An external resistor divider is used to set output voltage. By selecting R1 and R2, the output voltage is programmed to the desired value. When the output voltage is regulated, the typical voltage at the FB pin is VFB. Equation 2, Equation 3, and Equation 4 can be used to calculate R1 and R2. When sizing R2, in order to achieve low current consumption and acceptable noise sensitivity, use a minimum of 5 μA for the feedback current IFB. Larger currents through R2 improve noise sensitivity and output voltage accuracy but increase current consumption. R1 ö R1 ö æ æ VOUT = VFB ´ ç 1 + ÷ ÷ = 0.6V ´ ç 1 + R2 ø R2 ø è è (2) VFB 0.6V = = 120kW I FB 5mA V V R1 = R 2 ´ ( OUT - 1) = R 2 ´ ( OUT - 1) 0.6V VFB R2 = (3) (4) Due to the maximum duty cycle limit, the output voltage is out of regulation if the input voltage is too low. For proper regulation, VOUT should be set below VIN_MIN as shown in Equation 5. VOUT £ VIN_MIN ´ DMAX where • VIN_MIN, the minimum value of the input voltage; (5) 10.2.2.2 Loop Stability The first step of circuit and stability evaluation is to look from a steady-state perspective at the following signals: • Switching node, SW • Inductor current, IL • Output ripple voltage, VOUT(AC) These are the basic signals that need to be measured when evaluating a switching converter. When the switching waveform shows large duty cycle jitter or the output voltage or inductor current shows oscillations, the regulation loop may be unstable. This is often a result of board layout and/or L-C combination. Applications with the recommended L-C combinations in Table 2 are designed for good loop stability as well as fast load transient response. As a next step in the evaluation of the regulation loop, the load transient response is illustrated. The TLV62565/6 use a constant on time with valley current mode control, so the on time of the high-side MOSFET is relatively consistent from cycle to cycle when a load transient occurs. Whereas the off time adjusts dynamically in accordance with the instantaneous load change and brings VOUT back to the regulated value. During recovery time, VOUT can be monitored for settling time, overshoot, or ringing which helps judge the stability of the converter. Without any ringing, the loop usually has more than 45° of phase margin. 12 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 TLV62565, TLV62566 www.ti.com SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 10.2.3 Application Performance Curves 100 100 VOUT=1. 8V VOUT=1.2V 90 80 80 70 70 Efficiency [%] Efficiency [%] 90 60 50 40 30 40 VVin=2.7V IN=2.7V 20 VVin=3.6V IN=3.6V 10 50 30 VVin=2.7V IN=2.7V 20 60 VVin=3.6V IN=3.6V 10 VVin=5.5V IN=5.5V 0 VVin=5.5V IN=5.5V 0 10µ 100µ 1m 10m 100m 1 Load current [A] 10µ 10m 100m 1 C002 Figure 10. Efficiency vs Load Current 1.85 100 VOUT=3.3V 90 Load=0.5A 1.84 Load=1A 1.83 Output Voltage [V] 80 70 Efficiency [%] 1m Load current [A] Figure 9. Efficiency vs Load Current 60 50 40 30 20 Load=1.5A 1.82 1.81 1.80 1.79 1.78 1.77 VVin=4.2V IN=4.2V 10 1.76 VVin=5.5V IN=5.5V 0 1.75 10µ 100µ 1m 10m 100m 2.5 1 Load current [A] 3 3.5 4 4.5 5 5.5 6 Input Voltage[V] C003 Figure 11. Efficiency vs Load Current C011 Figure 12. Output Voltage vs Input Voltage 1.85 VIN = 3.6 V VO = 1.8 V 1.84 Vo 10 mV/div 1.83 Output voltage [V] 100µ C001 1.82 1.81 1.80 SW 2 V/div 1.79 1.78 Vin=2.7V V IN=2.7V 1.77 Iinductor 1A/div V Vin=3.6V IN=3.6V 1.76 V Vin=5.5V IN=5.5V 1.75 10µ 100µ 1m 10m 100m Load current [A] 0.4 µs/div 1 C004 Figure 13. Output Voltage vs Load Current G001 IOUT = 1.5 A Figure 14. Typical Application (PWM Mode) Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 Submit Documentation Feedback 13 TLV62565, TLV62566 SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com VIN = 3.6 V VO = 1.8 V/100mA VIN = 3.6 V VO = 1.8 V/10mA Vo 20 mV/div Vo 20 mV/div SW 2 V/div SW 2 V/div Iinductor 1A/div Iinductor 1A/div 2.0 µs/div 10 µs/div G002 Figure 15. Typical Application (PFM Mode) Figure 16. Typical Application (PFM Mode) Vo 0.1 V/div Vo 0.1 V/div Io 1 A/div Io 1 A/div Iinductor 1 A/div VIN = 3.6 V VO = 1.8 V L=2.2 uH,Co=10 uF Load: 0.3 A to 1.3 A 4.0 µs/div G003 VIN = 3.6 V VO = 1.8 V L=2.2 uH, Co=10 uF Load: 1.3 A to 0.3 A Iinductor 1 A/div 4.0 µs/div G007 Figure 17. Load Transient G008 Figure 18. Load Transient VIN = 3.6 V VO = 1.8 V Vo 1 V/div Vo 1 V/div VIN = 3.6 V VO = 1.8 V Load= 0 A PG 1 V/div EN 2 V/div VIN 5 V/div Iinductor 1A/div Iinductor 1A/div 400 µs/div 400 µs/div G004 G005 IOUT = 1.5 A Figure 19. Start Up 14 Submit Documentation Feedback Figure 20. Start Up (Power Good) Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 TLV62565, TLV62566 www.ti.com SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 VIN = 3.6 V VO = 1.8 V Vo 1 V/div Io 1 A/div Iinductor 1 A/div 2.0 µs/div G006 No load to short circuit Figure 21. Short Circuit Protection 11 Power Supply Recommendations The power supply to the TLV62565 and TLV62566 needs to have a current rating according to the supply voltage, output voltage and output current of the TLV62565 and TLV62566. Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 Submit Documentation Feedback 15 TLV62565, TLV62566 SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com 12 Layout 12.1 Layout Guidelines The PCB layout is an important step to maintain the high performance of the TLV62565 devices. • The input/output capacitors and the inductor should be placed as close as possible to the IC. This keeps the traces short. Routing these traces direct and wide results in low trace resistance and low parasitic inductance. • A common power GND should be used. • The low side of the input and output capacitors must be connected properly to the power GND to avoid a GND potential shift. • The sense traces connected to FB are signal traces. Special care should be taken to avoid noise being induced. Keep these traces away from SW nodes. • GND layers might be used for shielding. 12.2 Layout Example VIN VOUT L1 VIN SW C2 C1 GND GND FB EN /PG R2 R1 Figure 22. TLV62565/6 Layout 12.3 Thermal Considerations Implementation of integrated circuits in low-profile and fine-pitch surface-mount packages typically requires special attention to power dissipation. Many system-dependent issues such as thermal coupling, airflow, convection surfaces, and the presence of other heat-generating components affect the power dissipation limits of a given component. Two basic approaches for enhancing thermal performance are listed below: • Improving the power dissipation capability of the PCB design • Introducing airflow in the system For more details on how to use the thermal parameters, see the application notes: Thermal Characteristics Application Notes SZZA017 and SPRA953. 16 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 TLV62565, TLV62566 www.ti.com SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 13 Device and Documentation Support 13.1 Device Support 13.1.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 13.2 Documentation Support 13.2.1 Related Documentation Semiconductor and IC Package Thermal Metrics Application Report (SPRA953) Thermal Characteristics of Linear and Logic Packages Using JEDEC PCB Designs Application Report (SZZA017) 13.3 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 4. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY TLV62565 Click here Click here Click here Click here Click here TLV62566 Click here Click here Click here Click here Click here 13.4 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 13.5 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 13.6 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 13.7 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 Submit Documentation Feedback 17 TLV62565, TLV62566 SLVSBC1D – OCTOBER 2013 – REVISED OCTOBER 2016 www.ti.com 13.8 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 14 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 18 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Product Folder Links: TLV62565 TLV62566 PACKAGE OPTION ADDENDUM www.ti.com 28-Sep-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) TLV62565DBVR ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 85 SIK Samples TLV62565DBVT ACTIVE SOT-23 DBV 5 250 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 85 SIK Samples TLV62566DBVR ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 85 SIL Samples TLV62566DBVT ACTIVE SOT-23 DBV 5 250 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 85 SIL Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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TLV62565DBVT
  •  国内价格 香港价格
  • 1+11.337291+1.37516
  • 10+10.1599610+1.23235
  • 25+9.6412725+1.16944
  • 100+7.91960100+0.96061

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