TMP708AIDBVR

Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TMP708 SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 TMP708 Resistor-Programmable Temperature Switch in SOT Package 1 Features 3 Description • The TMP708 is a fully-integrated, resistorprogrammable temperature switch with a temperature threshold that is set by just one external resistor within the entire operating range. The TMP708 provides an open-drain, active-low output and has a 2.7-V to 5.5-V supply voltage range. 1 • • • • • • • Threshold Accuracy: – ±0.5°C Typical – ±3°C Maximum (60°C to 100°C) Temperature Threshold Set By 1% External Resistor Low Quiescent Current: 40 μA, Typical Open-Drain, Active-Low Output Stage Pin-Selectable 10°C or 30°C Hysteresis Reset Operation Specified at VCC = 0.8 V Supply Range: 2.7 V to 5.5 V Package: 5-Pin SOT-23 The temperature threshold accuracy is typically ±0.5°C, with a maximum of ±3°C (60°C to 100°C). The quiescent current consumption is typically 40 μA. Hysteresis is pin-selectable to 10°C or 30°C. The TMP708 is available in a 5-pin, SOT-23 package. Device Information(1) PART NUMBER 2 Applications • • • • • TMP708 Computers (Laptops and Desktops) Servers Industrial and Medical Equipment Storage Area Networks Automotive PACKAGE SOT-23 (5) BODY SIZE (NOM) 2.90 mm x 1.60 mm (1) For all available packages, see the package option addendum at the end of the datasheet. Typical Application 150 0.1 …F 2.7 V to 5.5 V 470 k VCC VCC OT TMP708 Microprocessor SET GND HYST GND RSET Copyright © 2016, Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TMP708 SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 4 5 6 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description .............................................. 7 7.1 Overview ................................................................... 7 7.2 Functional Block Diagram ......................................... 7 7.3 Feature Description................................................... 8 7.4 Device Functional Modes.......................................... 8 8 Application and Implementation .......................... 9 8.1 Application Information.............................................. 9 8.2 Typical Application ................................................... 9 9 Power Supply Recommendations...................... 11 10 Layout................................................................... 11 10.1 Layout Guidelines ................................................. 11 10.2 Layout Example .................................................... 11 10.3 Thermal Considerations ........................................ 11 11 Device and Documentation Support ................. 12 11.1 11.2 11.3 11.4 11.5 Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 12 12 12 12 12 12 Mechanical, Packaging, and Orderable Information ........................................................... 12 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (February 2012) to Revision B Page • Added Device Information, ESD Ratings, and Recommended Operating Conditions tables, and Detailed Description, Application and Implementation, Power Supply Recommendations, Layout, Device and Documentation Support, and Mechanical, Packaging, and Orderable Information sections........................................................................... 1 • Deleted Package and Ordering Information table; information now available in package option addendum located at the end of this data sheet ...................................................................................................................................................... 2 Changes from Original (December 2011) to Revision A Page • Updated threshold accuracy feature bullet ............................................................................................................................ 1 • Updated threshold accuracy text in second paragraph of Description section ...................................................................... 1 • Updated temperature error parameter in the Electrical Characteristics ................................................................................. 5 2 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: TMP708 TMP708 www.ti.com SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 5 Pin Configuration and Functions DBV Package 5-Pin SOT-23 Top View SET 1 GND 2 OT 3 5 VCC 4 HYST Not to scale Pin Functions PIN NAME NO. TYPE DESCRIPTION GND 2 HYST 4 Analog power Device ground OT 3 SET 1 Analog input VCC 5 Analog power Power-supply voltage (2.7 V to 5.5 V) Digital input Hysteresis selection. For 10°C, HYST = VCC; for 30°C, HYST = GND. Digital output Open-drain, active low output Temperature set point. Connect an external 1% resistor between SET and GND. Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: TMP708 3 TMP708 SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) Voltage Current (1) MIN MAX Supply, VCC –0.3 6 Input, SET and HYST –0.3 VCC + 0.3 Output, OT –0.3 6 Input 20 Output 20 Operating, TA Temperature –40 V mA 125 Junction, TJ 150 Storatge, Tstg (1) UNIT –65 °C 150 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 V(ESD) (1) (2) Electrostatic discharge (1) UNIT ±4000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000 Machine model (MM) ±200 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN VCC Supply voltage TA Operating temperature NOM MAX UNIT 2.7 5.5 V 0 125 °C 6.4 Thermal Information TMP708 THERMAL METRIC (1) DBV (SOT-23) UNIT 5 PINS RθJA Junction-to-ambient thermal resistance 217.9 °C/W RθJC(top) Junction-to-case (top) thermal resistance 86.3 °C/W RθJB Junction-to-board thermal resistance 44.6 °C/W ψJT Junction-to-top characterization parameter 4.4 °C/W ψJB Junction-to-board characterization parameter 43.8 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: TMP708 TMP708 www.ti.com SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 6.5 Electrical Characteristics at TA = 0°C to 125°C and VCC = 2.7 V to 5.5 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCC = 5 V 40 55 µA VCC = 2.7 V 40 55 µA ±0.5 ±3 °C POWER SUPPLY ICC Supply current TEMPERATURE TE Temperature error TA = 60°C to 100°C DIGITAL INPUT (HYST) VIH High-level input voltage VIL Low-level input voltage Ilkg_in Input leakage current CIN Input capacitance 0.7 × VCC V 0.3 × VCC V 1 µA 10 pF ANALOG INPUT (SET) VIN Input voltage range 0 VCC V DIGITAL OPEN-DRAIN OUTPUT (OT) I(OT_SINK) Output sink current VOT = 0.3 V Ilkg(OT) Output leakage current VOT = VCC 5 12 mA 1 µA Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: TMP708 5 TMP708 SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 www.ti.com 6.6 Typical Characteristics at TA = 25°C and VCC = 2.7 V to 5.5 V (unless otherwise noted) 48 100 VCC = 5 V VCC = 2.7 V 90 80 44 70 RSET (kW) Supply Current (mA) 46 42 40 60 50 40 30 38 20 36 10 RSET = 0 W 34 0 0 20 40 60 80 100 120 140 0 20 Temperature (°C) Figure 1. Supply Current vs Temperature 80 100 120 140 Figure 2. RSET vs Trip Temperature 1.5 10°C Hysteresis 30°C Hysteresis 1 Temperature Error (°C) 30 Hysteresis (°C) 60 Trip Temperature (°C) 35 25 20 15 10 0.5 0 -0.5 -1 5 0 -1.5 0 20 40 60 80 100 120 140 0 Trip Temperature (°C) 20 40 60 80 100 120 140 Trip Temperature (°C) Figure 3. Hysteresis vs Trip Temperature 6 40 Figure 4. Temperature Error vs Trip Temperature Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: TMP708 TMP708 www.ti.com SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 7 Detailed Description 7.1 Overview The TMP708 is a fully-integrated, resistor-programmable temperature switch that incorporates two temperaturedependent voltage references and one comparator. One voltage reference exhibits a positive temperature coefficient (tempco), and the other voltage reference exhibits a negative tempco. The temperature at which both voltage references are equal determines the temperature trip point. The Functional Block Diagram shows the comparator, the NFET open-drain device connected to the OT pin, the positive tempco reference using the external RSET resistor, the negative tempco reference, and the hysteresis control. The voltage of the positive tempco reference is controlled by external resistor RSET. 7.2 Functional Block Diagram 2.7 V to 5.5 V VCC HYST SET Hysteresis Control R PULLUP Positive Tempco Reference OT RSET Negative Tempco Reference TMP708 GND Copyright © 2016, Texas Instruments Incorporated Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: TMP708 7 TMP708 SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 www.ti.com 7.3 Feature Description 7.3.1 Temperature Switch The TMP708 temperature threshold is programmable from 0°C to 125°C and is set by an external 1% resistor from the SET pin to the GND pin. The TMP708 has an open-drain, active-low output structure that easily interfaces with a microprocessor. The TMP708 reaches the temperature trip point when the voltage from the positive tempco reference exceeds the voltage from the negative tempco reference. This difference causes the output of the comparator to switch from logic 0 to logic 1. The comparator output drives the gate of the NFET open-drain device, and pulls the voltage on the OT pin from logic 1 to logic 0 under these conditions; in other words, the output trips. Furthermore, the logic 1 output from the comparator causes the hysteresis control to increase the voltage of the positive tempco reference by an amount set by the logic setting on the HYST pin (10°C for logic 1 on the HYST pin; 30°C for logic 0 on the HYST pin). Increase the voltage of the positive tempco reference after the TMP708 trips to stop the TMP708 from untripping (voltage on the OT pin changing from logic 0 to logic 1) until the local temperature reduces by the amount set by the HYST pin. After the local temperature reduces, and the voltage from the positive tempco reference is less than the voltage from the negative tempco reference, the output of the comparator switches from logic 1 to logic 0. This condition causes the voltage on the OT pin to change from logic 0 to logic 1 (device untrips). 7.3.2 Hysteresis Input The HYST pin is a digital input that allows the input hysteresis to be set at either 10°C (when HYST = VCC) or 30°C (when HYST = GND). The hysteresis function keeps the OT pin from oscillating when the temperature is near the threshold. Thus, always connect the HYST pin to either VCC or GND. Other input voltages on this pin can cause abnormal supply currents or a device malfunction. 7.3.3 Set-Point Resistor (RSET) Set the temperature threshold by connecting RSET from the SET pin to GND. The value of RSET is determined using either Figure 2 or Equation 1: RSET (kΩ) = 0.0012T2 – 0.9308T + 96.147 where • T = temperature threshold in degrees Celsius. (1) 7.4 Device Functional Modes The TMP708 device has a single functional mode. Normal operation for the TMP708 device occurs when the power-supply voltage applied across the VCC and GND pins is within the specified operating range of 2.7 V to 5.5 V. 8 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: TMP708 TMP708 www.ti.com SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The TMP708 device is simple to configure. The only external components that the device requires are a bypass capacitor and pullup resistor. Power-supply bypassing is strongly recommended. Use a 0.1-µF capacitor placed as close as possible to the VCC supply pin. To minimize the internal power dissipation of the TMP708 family of devices, use a pullup resistor value greater than 10 kΩ from the OT pin to the VCC pin. See the Hysteresis Input section for hysteresis configuration, and the Set-Point Resistor (RSET) section for configuring the temperature threshold. 8.2 Typical Application 2.7 V to 5.5 V 150 0.1 …F 470 k VCC HYST VCC OT TMP708 Microprocessor SET GND GND RSET Copyright © 2016, Texas Instruments Incorporated Figure 5. Overtemperature Protection for a 60°C Trip Point 8.2.1 Design Requirements For this design example, a 2.7-V to 5.5-V power supply, 60°C trip point, and 10°C hysteresis are used. Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: TMP708 9 TMP708 SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 www.ti.com Typical Application (continued) 8.2.2 Detailed Design Procedure Connect the HYST pin to VCC for 10°C hysteresis. For a 60°C temperature threshold, see the Set-Point Resistor (RSET) section to compute an ideal RSET resistor value of 44.619 kΩ. Select the closest standard value resistor available; in this case, 44.2 kΩ. Use a 10-kΩ pullup resistor from the OT pin to the VCC pin. To minimize power, a larger-value pullup resistor can be used, but must not exceed 470 kΩ. Place a 0.1-μF bypass capacitor close to the TMP708 device in order to reduce noise coupled from the power supply. 8.2.3 Application Curves Figure 6 shows an example of the hysteresis feature. The HYST pin is connected to VCC, so the TMP708 device is configured for 10°C of hysteresis. The device is configured for a 60°C trip temperature by the RSET resistor value; therefore, the OT output asserts low when the 60°C threshold is exceeded. The OT output remains asserted low until the sensor reaches 50°C. OUT VS 50°C 60°C T(TRIP) Figure 6. TMP708 Hysteresis Function 10 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: TMP708 TMP708 www.ti.com SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 9 Power Supply Recommendations The TMP708 low supply current and supply range allow this device to be powered from many sources. Any significant noise on the VCC pin can result in a trip-point error. Minimize this noise by low-pass filtering the device supply (VCC) using a 150-Ω resistor and a 0.1-μF capacitor. 10 Layout 10.1 Layout Guidelines The TMP708 is extremely simple to lay out. Figure 7 shows the recommended board layout. 10.2 Layout Example VIA to ground plane VIA to power plane RSET 150 SET VCC 0.1 …F GND OT HYST Figure 7. Recommended Layout 10.3 Thermal Considerations The TMP708 quiescent current is typically 40 μA. The device dissipates negligible power when the output drives a high-impedance load. Thus, the die temperature is the same as the package temperature. In order to maintain accurate temperature monitoring, provide a good thermal contact between the TMP708 package and the device being monitored. The rise in die temperature as a result of self-heating is given by Equation 2: ΔTJ = PDISS × θJA where • • PDISS = power dissipated by the device. θJA = package thermal resistance. Typical thermal resistance for SOT-23 package is 217.9°C/W. (2) To limit the effects of self-heating, keep the output current at a minimum level. Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: TMP708 11 TMP708 SBOS585B – DECEMBER 2011 – REVISED DECEMBER 2016 www.ti.com 11 Device and Documentation Support 11.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 11.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 12 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Product Folder Links: TMP708 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TMP708AIDBVR ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 SBI TMP708AIDBVT ACTIVE SOT-23 DBV 5 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 SBI (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of