TPS22914B, TPS22914C, TPS22915B, TPS22915C
TPS22914B,
TPS22914C,
TPS22915B,
TPS22915C
SLVSCO0E
– JUNE 2014
– REVISED OCTOBER
2020
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SLVSCO0E – JUNE 2014 – REVISED OCTOBER 2020
TPS2291xx, 5.5-V, 2-A, 37-mΩ On-Resistance Load Switch
1 Features
3 Description
•
•
•
The TPS22914/15 is a small, low R ON, single channel
load switch with controlled slew rate. The device
contains an N-channel MOSFET that can operate
over an input voltage range of 1.05 V to 5.5 V and can
support a maximum continuous current of 2 A. The
switch is controlled by an on and off input, which is
capable of interfacing directly with low-voltage control
signals.
•
•
•
•
•
•
•
Integrated Single Channel Load Switch
Input Voltage Range: 1.05 V to 5.5 V
Low On-Resistance (RON)
– RON = 37 mΩ (Typical) at VIN = 5 V
– RON = 38 mΩ (Typical) at VIN = 3.3 V
– RON = 43 mΩ (Typical) at VIN = 1.8 V
2-A Maximum Continuous Switch Current
Low Quiescent Current
– 7.7 µA (Typical) at VIN = 3.3 V
Low Control Input Threshold Enables Use of 1 V or
Higher GPIO
Controlled Slew Rate
– tR(TPS22914B/15B) = 64 µs at VIN = 3.3 V
– tR(TPS22914C/15C) = 913 µs at VIN = 3.3 V
Quick Output Discharge (TPS22915 only)
Ultra-Small Wafer-Chip-Scale Package
– 0.78 mm × 0.78 mm, 0.4-mm Pitch,
0.5-mm Height (YFP)
ESD Performance Tested per JESD 22
– 2-kV HBM and 1-kV CDM
2 Applications
•
•
•
•
•
•
Smartphones, Mobile Phones
Ultrathin, Ultrabook™ / Notebook PC
Tablet PC, Phablet
Wearable Technology
Solid State Drives
Digital Cameras
The small size and low R ON makes the device ideal
for being used in space constrained, battery powered
applications. The wide input voltage range of the
switch makes it a versatile solution for many different
voltage rails. The controlled rise time of the device
greatly reduces inrush current caused by large bulk
load capacitances, thereby reducing or eliminating
power supply droop. The TPS22915 further reduces
the total solution size by integrating a 143-Ω pulldown resistor for quick output discharge (QOD) when
the switch is turned off.
The TPS22914/15 is available in a small, spacesaving 0.78 mm x 0.78 mm, 0.4-mm pitch, 0.5-mm
height 4-pin Wafer-Chip-Scale (WCSP) package
(YFP). The device is characterized for operation over
the free-air temperature range of –40°C to +105°C.
Device Information (1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TPS22914B
TPS22914C
DSBGA (4)
TPS22915B
0.74 mm x 0.74 mm
TPS22915C
(1)
For all available packages, see the orderable addendum at
the end of the datasheet.
80
ON
CIN
OFF
VOUT
ON
GND
CL
RL
TPS22914/15
60
GND
Simplified Schematic
-40°C
25°C
85°C
105°C
70
RON (m:)
Power Supply
VIN
50
40
30
20
1.05
1.55
2.05
2.55
3.05 3.55
VIN (V)
4.05
4.55
5.05
5.5
D005
RON vs VIN (IOUT = –200 mA)
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
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Copyright
© 2020 Texas
Instruments
Incorporated
intellectual
property
matters
and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings........................................ 4
7.2 ESD Ratings............................................................... 4
7.3 Recommended Operating Conditions.........................4
7.4 Thermal Information....................................................4
7.5 Electrical Characteristics.............................................5
7.6 Switching Characteristics............................................8
7.7 Typical DC Characteristics..........................................9
7.8 Typical AC Characteristics (TPS22914B/15B).......... 11
7.9 Typical AC Characteristics (TPS22914C/15C)......... 14
8 Parameter Measurement Information.......................... 16
9 Detailed Description......................................................17
9.1 Overview................................................................... 17
9.2 Functional Block Diagram......................................... 17
9.3 Feature Description...................................................17
9.4 Device Functional Modes..........................................18
10 Application and Implementation................................ 19
10.1 Application Information........................................... 19
10.2 Typical Application.................................................. 19
11 Power Supply Recommendations..............................21
12 Layout...........................................................................21
12.1 Layout Guidelines................................................... 21
12.2 Layout Example...................................................... 22
13 Device and Documentation Support..........................23
13.1 Documentation Support.......................................... 23
13.2 Related Links.......................................................... 23
13.3 Receiving Notification of Documentation Updates..23
13.4 Support Resources................................................. 23
13.5 Trademarks............................................................. 23
13.6 Electrostatic Discharge Caution..............................23
13.7 Glossary..................................................................23
14 Mechanical, Packaging, and Orderable
Information.................................................................... 24
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (September 2016) to Revision E (October 2020)
Page
• Updated the numbering format for tables, figures and cross-references throughout the document...................1
• Updated the body size in the Device Information table...................................................................................... 1
Changes from Revision C (July 2015) to Revision D (September 2016)
Page
• Changed "TPS22915B" only, to "TPS22915B/C only" in the Electrical Characteristics table ............................5
Changes from Revision B (September 2014) to Revision C (July 2015)
Page
• Updated TA ratings in datasheet from 85°C to 105°C.........................................................................................1
Changes from Revision A (June 2014) to Revision B (September 2014)
Page
• Updated X-axis scales in th Typical Characteristics section. .............................................................................9
Changes from Revision * (June 2014) to Revision A (June 2014)
Page
• Initial release of full version. .............................................................................................................................. 1
2
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5 Device Comparison Table
DEVICE
RON at 3.3V
(TYPICAL)
tR at 3.3V
(TYPICAL)
QUICK OUTPUT
DISCHARGE
MAXIMUM OUTPUT
CURRENT
ENABLE
TPS22914B
38 mΩ
64 µs
No
2A
Active High
TPS22914C
38 mΩ
913 µs
No
2A
Active High
TPS22915B
38 mΩ
64 µs
Yes
2A
Active High
TPS22915C
38 mΩ
913 µs
Yes
2A
Active High
6 Pin Configuration and Functions
B
B
A
A
2
1
1
LASER MARKING VIEW
2
BUMP VIEW
Figure 6-1. YFP PACKAGE 4 PIN DSBGA TOP VIEW
Table 6-1. Pin Description
B
ON
GND
A
VIN
VOUT
2
1
Table 6-2. Pin Functions
PIN
NO.
NAME
TYPE
O
Switch output. Place ceramic bypass capacitor(s) between this pin
and GND. See the Detailed Description section for more information
I
Switch input. Place ceramic bypass capacitor(s) between this pin and
GND. See the Detailed Description section for more information
A1
VOUT
A2
VIN
B1
GND
—
B2
ON
I
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DESCRIPTION
Device ground
Active high switch control input. Do not leave floating
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7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1) (2)
MIN
MAX
UNIT
VIN
Input voltage
–0.3
6
V
VOUT
Output voltage
–0.3
6
V
VON
ON voltage
–0.3
6
V
IMAX
Maximum continuous switch current
IPLS
Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle
TJ
Maximum junction temperature
TSTG
Storage temperature
(1)
(2)
–65
2
A
2.5
A
125
°C
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
All voltage values are with respect to network ground terminal.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC
JS-001(1)
UNIT
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
V
±1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
7.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)
MIN
VIN
Input voltage
VON
ON voltage
MAX
UNIT
1.05
5.5
V
0
5.5
V
VOUT
Output voltage
VIN
V
VIH, ON
High-level input voltage, ON
VIN = 1.05 V to 5.5 V
1
5.5
V
VIL, ON
Low-level input voltage, ON
VIN = 1.05 V to 5.5 V
0
0.5
V
TA
Operating free-air temperature range(1)
–40
105
°C
CIN
Input Capacitor
1(2)
(1)
(2)
µF
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature
may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [T
J(MAX)], the maximum power dissipation of the device in the application [PD(MAX)], and the junction-to-ambient thermal resistance of the
part/package in the application (θJA), as given by the following equation: TA(MAX) = TJ(MAX) – (θJA × PD(MAX)).
Refer to the Detailed Description section.
7.4 Thermal Information
TPS2291x
THERMAL
METRIC(1)
YFP (DSBGA)
UNIT
4 PINS
4
RθJA
Junction-to-ambient thermal resistance
193
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
2.3
°C/W
RθJB
Junction-to-board thermal resistance
36
°C/W
ψJT
Junction-to-top characterization parameter
12
°C/W
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7.4 Thermal Information (continued)
TPS2291x
THERMAL METRIC(1)
UNIT
YFP (DSBGA)
4 PINS
ψJB
(1)
Junction-to-board characterization parameter
36
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Electrical Characteristics
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤ TA ≤ +105°C. Typical values are for TA = 25°C.
PARAMETER
TEST CONDITION
VIN = 5.5 V
VIN = 5 V
Quiescent current
(TPS22914B/15B)
VIN = 3.3 V
VON = 5 V, IOUT = 0 A
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.05 V
IQ, VIN
VIN = 5.5 V
VIN = 5 V
Quiescent current
(TPS22914C/15C)
VIN = 3.3 V
VON = 5 V, IOUT = 0 A
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.05 V
Copyright © 2020 Texas Instruments Incorporated
TA
–40°C to +85°C
MIN
TYP
7.7
–40°C to +105°C
–40°C to +85°C
6.7
7.7
7.6
7.7
8.4
–40°C to +85°C
10.7
11.7
µA
13.4
7.4
–40°C to +105°C
–40°C to +105°C
11.1
13.3
–40°C to +105°C
–40°C to +85°C
11.5
13.7
–40°C to +105°C
–40°C to +85°C
10.9
14.1
–40°C to +105°C
–40°C to +85°C
10.4
11.7
–40°C to +105°C
–40°C to +85°C
µA
13.9
–40°C to +105°C
–40°C to +85°C
11
13.5
7.4
–40°C to +105°C
–40°C to +85°C
9.6
12
8.4
–40°C to +105°C
–40°C to +85°C
9.6
11.9
7.7
–40°C to +105°C
–40°C to +85°C
10.8
12.1
7.6
–40°C to +105°C
–40°C to +85°C
MAX UNIT
11
12.8
6.7
10.9
10.9
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7.5 Electrical Characteristics (continued)
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤ TA ≤ +105°C. Typical values are for TA = 25°C.
PARAMETER
TEST CONDITION
VIN = 5.5 V
VIN = 5.0 V
VIN = 3.3 V
ISD, VIN
Shutdown current
VON = 0 V, VOUT = 0 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.05 V
ION
ON pin input leakage
current
TA
–40°C to +85°C
MIN
TYP
2
0.5
2
–40°C to +105°C
–40°C to +85°C
3
–40°C to +105°C
–40°C to +85°C
3
0.5
–40°C to +105°C
–40°C to +85°C
0.5
0.4
–40°C to +105°C
VIN = 5.5 V, IOUT = –200 mA
–40°C to +85°C
25°C
0.4
VIN = 5 V, IOUT = –200 mA
0.1
37
RON
On-resistance
57
37
–40°C to +85°C
52
59
38
–40°C to +85°C
6
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mΩ
58
43
48
–40°C to +85°C
59
–40°C to +105°C
66
52
–40°C to +85°C
25°C
mΩ
42
53
mΩ
61
73
–40°C to +105°C
VIN = 1.05 V, IOUT = –200 mA
41
–40°C to +85°C
25°C
VIN = 1.2 V, IOUT = –200 mA
mΩ
58
38
–40°C to +105°C
25°C
mΩ
41
52
–40°C to +105°C
VIN = 1.8 V, IOUT = –200 mA
41
51
25°C
VIN = 2.5 V, IOUT = –200 mA
mΩ
57
37
–40°C to +85°C
25°C
µA
40
51
–40°C to +105°C
VIN = 3.3 V, IOUT = –200 mA
2
–40°C to +105°C
25°C
VIN = 4.2 V, IOUT = –200 mA
2
3
–40°C to +105°C
25°C
µA
3
–40°C to +105°C
VIN = 5.5 V, IOUT = 0 A
2
3
–40°C to +105°C
–40°C to +85°C
2
3
–40°C to +105°C
–40°C to +85°C
MAX UNIT
0.5
mΩ
85
63
96
–40°C to +85°C
102
–40°C to +105°C
107
mΩ
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7.5 Electrical Characteristics (continued)
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40°C ≤ TA ≤ +105°C. Typical values are for TA = 25°C.
PARAMETER
TEST CONDITION
TA
ON pin hysteresis
VIN = 5 V
100
VIN = 2.5 V
(1)
Output pull down resistor
25°C
mV
96
VIN = 1.8 V
96
VIN = 1.2 V
94
VIN = VOUT = 3.3 V, VON = 0 V
MAX UNIT
98
VIN = 1.05 V
RPD (1)
TYP
102
VIN = 3.3 V
VHYS
MIN
VIN = 5.5 V
92
–40°C to +105°C
143
200
Ω
TPS22915B/C only.
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7.6 Switching Characteristics
Refer to the timing test circuit in Figure 8-1 (unless otherwise noted) for references to external components used for the test
condition in the switching characteristics table. Switching characteristics shown below are only valid for the power-up
sequence where VIN is already in steady state condition before the ON pin is asserted high.
PARAMETER
TEST CONDITION
TYP
(TPS22914B/15B)
TYP
(TPS22914C/15C)
UNIT
µs
VIN = 5 V, VON = 5 V, TA = 25°C (unless otherwise noted)
tON
Turnon time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
104
1300
tOFF
Turnoff time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
2
2
µs
tR
VOUT rise time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
89
1277
µs
tF
VOUT fall time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
2
2
µs
tD
Delay time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
59
663
µs
VIN = 3.3 V, VON = 5 V, TA = 25°C (unless otherwise noted)
tON
Turnon time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
83
1077
µs
tOFF
Turnoff time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
2
2
µs
tR
VOUT rise time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
64
913
µs
tF
VOUT fall time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
2
2
µs
tD
Delay time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
52
622
µs
µs
VIN = 1.05 V, VON = 5 V, TA = 25°C (unless otherwise noted)
8
tON
Turnon time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
61
752
tOFF
Turnoff time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
3
3
µs
tR
VOUT rise time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
28
409
µs
tF
VOUT fall time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
2
2
µs
tD
Delay time
RL = 10 Ω, CIN = 1 µF, COUT = 0.1 µF
47
547
µs
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11
11
10
10
9
9
8
8
IQ (PA)
IQ (PA)
7.7 Typical DC Characteristics
7
6
7
6
5
5
-40°C
25°C
85°C
105°C
4
3
1.05
1.55
2.05
2.55
VON = 5 V
3.05 3.55
VIN (V)
4.05
4.55
5.05
4
3
1.05
5.5
1.55
2.05
2.55
D001
IOUT = 0 A
VON = 5 V
Figure 7-1. IQ vs VIN (TPS22914B/15B)
3.05 3.55
VIN (V)
4.05
4.55
5.05
5.5
D002
IOUT = 0 A
Figure 7-2. IQ vs VIN (TPS22914C/15C)
80
2.8
-40°C
25°C
85°C
105°C
2.4
70
60
RON (m:)
2
ISD (PA)
-40°C
25°C
85°C
105°C
1.6
1.2
0.8
50
40
30
20
0.4
VIN = 1.05V
VIN = 1.2V
VIN = 1.5V
10
0
1.05
1.55
2.05
VON = 0 V
2.55
3.05 3.55
VIN (V)
4.05
IOUT = 0 A
Figure 7-3. ISD vs VIN
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4.55
5.05
5.5
0
-40
-25
-10
D003
VON = 5 V
5
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
20 35 50 65 80
Junction Temperature (qC)
VIN = 4.2V
VIN = 5V
VIN = 5.5V
95
110 125
D004
IOUT = –200 mA
Figure 7-4. RON vs TJ
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80
80
-40°C
25°C
85°C
105°C
70
70
60
RON (m:)
RON (m:)
60
50
40
50
40
30
20
30
VIN = 1.05V
VIN = 1.2V
VIN = 1.5V
10
20
1.05
2.05
2.55
3.05 3.55
VIN (V)
4.05
4.55
5.05
5.5
0
0.5
IOUT = –200 mA
VON = 5 V
Figure 7-5. RON vs VIN
1.5
2
D006
TA = 25°C
Figure 7-6. RON vs IOUT
1
-40°C
25°C
85°C
105°C
0.95
0.9
0.95
0.9
0.85
0.85
0.8
VIH (V)
VIL (V)
1
IOUT (A)
D005
1
0.75
0.8
0.75
0.7
0.7
0.65
0.65
0.6
0.6
0.55
0.55
0.5
1.05
1.55
2.05
2.55
3.05 3.55
VIN (V)
4.05
4.55
5.05
-40°C
25°C
85°C
105°C
0.5
1.05
5.5
1.55
2.05
2.55
D007
IOUT = 0 A
3.05 3.55
VIN (V)
4.05
4.55
5.05
5.5
D008
IOUT = 0 A
Figure 7-8. VIH vs VIN
Figure 7-7. VIL vs VIN
170
190
-40°C
25°C
85°C
105°C
160
150
180
140
175
130
170
120
110
165
160
100
155
90
150
80
145
70
1.05
1.55
2.05
2.55
3.05 3.55
VIN (V)
4.05
IOUT = 0 A
Figure 7-9. VHYS vs VIN
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4.55
5.05
-40°C
25°C
85°C
105°C
185
RPD (:)
VHYS (V)
VIN = 4.2V
VIN = 5V
VIN = 5.5V
0
1.55
VON = 5 V
10
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
5.5
140
1.05
1.55
2.05
D009
VIN = VOUT
2.55
3.05 3.55
VIN (V)
4.05
4.55
5.05
5.5
D010
VON = 0 V
Figure 7-10. RPD vs VIN
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7.8 Typical AC Characteristics (TPS22914B/15B)
100
70
90
65
80
60
tD (Ps)
tR (Ps)
70
60
55
50
50
40
45
-40°C
25°C
85°C
105°C
30
20
1.05
1.55
2.05
2.55
CIN = 1 µF
3.05 3.55
VIN (V)
4.05
4.55
5.05
-40°C
25°C
85°C
105°C
40
35
1.05
5.5
1.55
RL = 10 Ω
CL = 0.1 µF
2.55
CIN = 1 µF
Figure 7-11. tR vs VIN
3.05 3.55
VIN (V)
4.05
4.55
5.05
5.5
D012
RL = 10 Ω
CL = 0.1 µF
Figure 7-12. tD vs VIN
5
5
4.5
4.5
4
4
3.5
3.5
tOFF (Ps)
3
tF (Ps)
2.05
D011
2.5
2
1.5
3
2.5
2
1.5
-40°C
25°C
85°C
105°C
1
0.5
0
1.05
1.55
2.05
CIN = 1 µF
2.55
3.05 3.55
VIN (V)
4.05
RL = 10 Ω
Figure 7-13. tF vs VIN
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4.55
5.05
-40°C
25°C
85°C
105°C
1
0.5
5.5
0
1.05
1.55
2.05
D013
CL = 0.1 µF
CIN = 1 µF
2.55
3.05 3.55
VIN (V)
4.05
RL = 10 Ω
4.55
5.05
5.5
D014
CL = 0.1 µF
Figure 7-14. tOFF vs VIN
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120
110
tON (Ps)
100
90
80
70
-40°C
25°C
85°C
105°C
60
50
1.05
1.55
2.05
CIN = 1 µF
2.55
3.05 3.55
VIN (V)
4.05
4.55
RL = 10 Ω
5.05
5.5
D015
CL = 0.1 µF
Figure 7-15. tON vs VIN
VIN = 5 V
CIN = 1 µF
CL = 0.1 µF
CL = 0.1 µF
VIN = 3.3 V
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
Figure 7-17. tF at VIN = 5 V
CIN = 1 µF
RL = 10 Ω
Figure 7-19. tF at VIN = 3.3V
12
CIN = 1 µF
Figure 7-16. tR at VIN = 5 V
RL = 10 Ω
VIN = 3.3 V
VIN = 5 V
RL = 10 Ω
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Figure 7-18. tR at VIN = 3.3 V
CL = 0.1 µF
VIN = 1.05 V
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
Figure 7-20. tR at VIN = 1.05V
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VIN = 1.05 V
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
Figure 7-21. tF at VIN = 1.05 V
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1500
750
1300
700
1100
650
tD (Ps)
tR (Ps)
7.9 Typical AC Characteristics (TPS22914C/15C)
900
700
600
550
-40°C
25°C
85°C
105°C
500
300
1.05
1.55
2.05
2.55
CIN = 1 µF
3.05 3.55
VIN (V)
4.05
4.55
5.05
-40°C
25°C
85°C
105°C
500
450
1.05
5.5
1.55
RL = 10 Ω
CL = 0.1 µF
2.55
CIN = 1 µF
Figure 7-22. tR vs VIN
3.05 3.55
VIN (V)
4.05
4.55
5.05
5.5
D017
RL = 10 Ω
CL = 0.1 µF
Figure 7-23. tD vs VIN
5
5
4.5
4.5
4
4
3.5
3.5
tOFF (Ps)
3
tF (Ps)
2.05
D016
2.5
2
3
2.5
2
1.5
1.5
-40°C
25°C
85°C
105°C
1
0.5
0
1.05
1.55
2.05
2.55
CIN = 1 µF
3.05 3.55
VIN (V)
4.05
4.55
5.05
-40°C
25°C
85°C
105°C
1
0.5
5.5
0
1.05
1.55
2.05
D018
RL = 10 Ω
CL = 0.1 µF
Figure 7-24. tF vs VIN
CIN = 1 µF
2.55
3.05 3.55
VIN (V)
4.05
4.55
RL = 10 Ω
5.05
5.5
D019
CL = 0.1 µF
Figure 7-25. tOFF vs VIN
1600
tON (Ps)
1400
1200
1000
-40°C
25°C
85°C
105°C
800
600
1.05
1.55
2.05
CIN = 1 µF
2.55
3.05 3.55
VIN (V)
4.05
RL = 10 Ω
Figure 7-26. tON vs VIN
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4.55
5.05
5.5
D020
CL = 0.1 µF
VIN = 5 V
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
Figure 7-27. tR at VIN = 5 V
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VIN = 5 V
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
Figure 7-28. tF at VIN = 5 V
VIN = 3.3 V
VIN = 3.3 V
CIN = 1 µF
Figure 7-29. tR at VIN = 3.3 V
CL = 0.1 µF
RL = 10 Ω
VIN = 1.05 V
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
Figure 7-30. tF at VIN = 3.3 V
VIN = 1.05 V
Figure 7-31. tR at VIN = 1.05 V
CIN = 1 µF
CL = 0.1 µF
RL = 10 Ω
Figure 7-32. tF at VIN = 1.05 V
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8 Parameter Measurement Information
VIN
VOUT
CIN = 1 µF
CL
+
-
ON
(A)
RL
GND
ON
TPS22914/15
OFF
GND
GND
A. Rise and fall times of the control signal is 100ns
Figure 8-1. Test Circuit
VON
50%
50%
tOFF
tON
VOUT
50%
50%
tF
tR
90%
VOUT
10%
10%
90%
10%
tD
Figure 8-2. Timing Waveforms
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9 Detailed Description
9.1 Overview
The device is a 5.5-V, 2-A load switch in a 4-pin YFP package. To reduce voltage drop for low voltage and high
current rails, the device implements an ultra-low resistance N-channel MOSFET which reduces the drop out
voltage through the device.
The device has a controlled and fixed slew rate which helps reduce or eliminate power supply droop due to large
inrush currents. During shutdown, the device has very low leakage currents, thereby reducing unnecessary
leakages for downstream modules during standby. Integrated control logic, driver, charge pump, and output
discharge FET eliminates the need for any external components, which reduces solution size and bill of
materials (BOM) count.
9.2 Functional Block Diagram
9.3 Feature Description
9.3.1 On and Off Control
The ON pins control the state of the switch. Asserting ON high enables the switch. ON is active high and has a
low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard
GPIO logic threshold. It can be used with any microcontroller with 1 V or higher GPIO voltage. This pin cannot
be left floating and must be driven either high or low for proper functionality.
9.3.2 Input Capacitor (CIN)
To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-µF
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ceramic capacitor, C IN, placed close to the pins, is usually sufficient. Higher values of C IN can be used to further
reduce the voltage drop during high-current application. When switching heavy loads, it is recommended to have
an input capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop.
9.3.3 Output Capacitor (CL)
Due to the integrated body diode in the MOSFET, a C IN greater than C L is highly recommended. A C L greater
than C IN can cause V OUT to exceed V IN when the system supply is removed. This could result in current flow
through the body diode from VOUT to VIN. A C IN to C L ratio of 10 to 1 is recommended for minimizing V IN dip
caused by inrush currents during startup.
9.4 Device Functional Modes
Table 9-1 describes the connection of the VOUT pin depending on the state of the ON pin.
Table 9-1. VOUT Connection
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ON
TPS22914
TPS22915
L
Open
GND
H
VIN
VIN
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10 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
10.1 Application Information
This section highlights some of the design considerations when implementing this device in various applications.
A PSPICE model for this device is also available in the product page of this device.
10.2 Typical Application
This typical application demonstrates how the TPS22914 and TPS22915 can be used to power downstream
modules.
VIN
VOUT
VIN
VOUT
CL
CIN
GND
ON
ON
TPS22914/15
Figure 10-1. Typical Application Schematic
10.2.1 Design Requirements
For this design example, use the input parameters shown in Table 10-1.
Table 10-1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
VIN
5V
Load current
2A
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10.2.2 Detailed Design Procedure
To begin the design process, the designer needs to know the following:
•
•
VIN voltage
Load Current
10.2.2.1 VIN to VOUT Voltage Drop
The VIN to VOUT voltage drop in the device is determined by the RON of the device and the load current. The R
of the device depends upon the VIN conditions of the device. Refer to the R ON specification of the device in
the Electrical Characteristics table of this datasheet. Once the R ON of the device is determined based upon the
VIN conditions, use Equation 1 to calculate the VIN to VOUT voltage drop.
ON
∆V = ILOAD × RON
(1)
where
•
•
•
ΔV = voltage drop from VIN to VOUT
ILOAD = load current
RON = On-resistance of the device for a specific VIN
An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.
10.2.2.2 Inrush Current
To determine how much inrush current is caused by the CL capacitor, use Equation 2.
IINRUSH = CL ´
dVOUT
dt
(2)
where
•
•
•
•
IINRUSH = amount of inrush caused by CL
CL = capacitance on VOUT
dt = rise time in VOUT during the ramp up of VOUT when the device is enabled
dVOUT = change in VOUT during the ramp up of VOUT when the device is enabled
An appropriate C L value must be placed on VOUT such that the I MAX and I PLS specifications of the device are
not violated.
10.2.3 Application Curves
VIN = 5 V
CL = 47 µF
Figure 10-2. TPS22914B/15B Inrush Current
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VIN = 5 V
CL = 47 µF
Figure 10-3. TPS22914C/15C Inrush Current
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11 Power Supply Recommendations
The device is designed to operate from a VIN range of 1.05 V to 5.5 V. This supply must be well regulated and
placed as close to the device terminal as possible with the recommended 1-µF bypass capacitor. If the supply is
located more than a few inches from the device terminals, additional bulk capacitance may be required in
addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or
ceramic capacitor of 1 µF may be sufficient.
12 Layout
12.1 Layout Guidelines
1. VIN and VOUT traces must be as short and wide as possible to accommodate for high current.
2. The VIN pin must be bypassed to ground with low ESR ceramic bypass capacitors. The typical
recommended bypass capacitance is 1-μF ceramic with X5R or X7R dielectric. This capacitor must be placed
as close to the device pins as possible.
3. The VOUT pin must be bypassed to ground with low ESR ceramic bypass capacitors. The typical
recommended bypass capacitance is one-tenth of the VIN bypass capacitor of X5R or X7R dielectric rating.
This capacitor must be placed as close to the device pins as possible.
12.1.1 Thermal Considerations
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic
electrical effects along with minimizing the case to ambient thermal impedance.
The maximum IC junction temperature must be restricted to 125°C under normal operating conditions. To
calculate the maximum allowable dissipation, P D(max) for a given output current and ambient temperature, use
Equation 3.
PD(MAX) =
TJ(MAX) - TA
qJA
(3)
where
•
•
•
•
PD(MAX) = maximum allowable power dissipation
TJ(MAX) = maximum allowable junction temperature (125°C for the TPS22914/15)
TA = ambient temperature of the device
θJA = junction to air thermal impedance. Refer to the Thermal Information table. This parameter is highly
dependent upon board layout.
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12.2 Layout Example
To GPIO control
ON
GND
VIN
VOUT
VOUT Bypass
Capacitor
VIN Bypass
Capacitor
VIA to Power Ground Plane
Figure 12-1. Recommended Board Layout
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13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
For related documentation see the following:
•
•
•
•
•
Basics of Load Switches
Managing Inrush Current
Load Switch Thermal Considerations
Using the TPS22915BEVM-078 Single Channel Load Switch IC
Implementing Ship Mode Using the TPS22915B Load Switches
13.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 13-1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TPS22914B
Click here
Click here
Click here
Click here
Click here
TPS22914C
Click here
Click here
Click here
Click here
Click here
TPS22915B
Click here
Click here
Click here
Click here
Click here
TPS22915C
Click here
Click here
Click here
Click here
Click here
13.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
13.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
13.5 Trademarks
Ultrabook™ is a trademark of Intel.
TI E2E™ is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
13.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
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14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS22914BYFPR
ACTIVE
DSBGA
YFP
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 105
S3
TPS22914BYFPT
ACTIVE
DSBGA
YFP
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 105
S3
TPS22914CYFPR
ACTIVE
DSBGA
YFP
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 105
S6
TPS22914CYFPT
ACTIVE
DSBGA
YFP
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 105
S6
TPS22915BYFPR
ACTIVE
DSBGA
YFP
4
3000
RoHS & Green
SAC396 | SNAGCU
Level-1-260C-UNLIM
-40 to 105
S4
TPS22915BYFPT
ACTIVE
DSBGA
YFP
4
250
RoHS & Green
SAC396 | SNAGCU
Level-1-260C-UNLIM
-40 to 105
S4
TPS22915CYFPR
ACTIVE
DSBGA
YFP
4
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 105
S7
TPS22915CYFPT
ACTIVE
DSBGA
YFP
4
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 105
S7
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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