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TPS22932B
SLVS802C – AUGUST 2009 – REVISED MAY 2015
TPS22932B Low Input Voltage, Ultralow rON Load Switch With Configurable Enable Logic
and Controlled Slew-Rate
1 Features
3 Description
•
•
The TPS22932B device is a low rON load switch with
controlled turnon. The device contains a P-channel
MOSFET that can operate over an input voltage
range of 1.1 V to 3.6 V.
1
•
•
•
•
•
•
•
•
Input Voltage: 1.1 V to 3.6 V
Ultralow ON-Resistance
– rON = 55 mΩ at VIN = 3.6 V
– rON = 65 mΩ at VIN = 2.5 V
– rON = 75 mΩ at VIN = 1.8 V
– rON = 115 mΩ at VIN = 1.2 V
500-mA Maximum Continuous Switch Current
Quiescent Current < 1 μA
Shutdown Current < 1 μA
Low Control Threshold Allows Use of 1.2-V, 1.8-V,
2.5-V, and 3.3-V Logic
Configurable Enable Logic
Controlled Slew Rate to Avoid Inrush Currents:
165 μs at 1.8 V
Six-Terminal Wafer Chip Scale Package (DSBGA)
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
A 120-Ω on-chip load resistor is available for output
quick discharge when the switch is turned off. The
rise time (slew rate) of the device is internally
controlled to avoid inrush current: the rise time of
TPS22932B is 165 μs.
TPS22932B is available in a space-saving 6-pin
DSBGA (YFP with 0.4-mm pitch). The device is
characterized for operation over the free-air
temperature range of –40°C to 85°C.
Device Information(1)
PART NUMBER
2 Applications
•
•
•
•
•
•
•
The switch is controlled by eight patterns of 3-bit
input. The user can choose the logic functions MUX,
AND, OR, NAND, NOR, inverter, and noninverter. All
inputs can be connected to VIN or GND. The control
pins can be connected to low-voltage GPIOs allowing
the switch to be controlled by either 1.2-V, 1.8-V, 2.5V, or 3.3-V logic signals while keeping extremely low
quiescent current.
TPS22932B
PDAs
Cell Phones
GPS Devices
MP3 Players
Digital Cameras
Peripheral Ports
Portable Instrumentation
PACKAGE
BODY SIZE (NOM)
DSBGA (6)
0.80 mm × 1.20 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application
VBATT
VIN
SMPS
(see Note A)
VOUT
ON1
CIN = 1 µF
GND
CL
ON2
LOAD
CL
RL
TPS22932B
ON3
GND
GND
A.
Switched-mode power supply
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22932B
SLVS802C – AUGUST 2009 – REVISED MAY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
3
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
7.11
7.12
3
3
4
4
4
5
5
6
6
6
7
8
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics, 1.2 V ...............................
Switching Characteristics, 1.5 V ...............................
Switching Characteristics, 1.8 V ...............................
Switching Characteristics, 2.5 V ...............................
Switching Characteristics, 3 V ................................
Switching Characteristics, 3.3 V .............................
Typical Characteristics ............................................
8
9
Parameter Measurement information ................ 13
Detailed Description ............................................ 14
9.1
9.2
9.3
9.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
14
14
14
15
10 Application and Implementation........................ 17
10.1 Application Information.......................................... 17
10.2 Typical Application ............................................... 17
11 Power Supply Recommendations ..................... 19
12 Layout................................................................... 19
12.1 Layout Guidelines ................................................. 19
12.2 Layout Example .................................................... 20
13 Device and Documentation Support ................. 21
13.1
13.2
13.3
13.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
21
21
21
21
14 Mechanical, Packaging, and Orderable
Information ........................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (August 2013) to Revision C
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
Moved Operating free-air temperature values in Absolute Maximum Ratings to the Recommended Operating Conditions 4
Changes from Revision A (November 2009) to Revision B
•
2
Page
Aligned package description throughout data sheet. ............................................................................................................. 1
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SLVS802C – AUGUST 2009 – REVISED MAY 2015
5 Device Comparison Table
(1)
DEVICE
rON at 1.8 V
(TYP)
SLEW RATE
(TYP at 3.3 V)
QUICK OUTPUT
DISCHARGE (1)
MAX OUTPUT
CURRENT
ENABLE
TPS22932B
75 mΩ
165 µs
Yes
500 mA
Active High
This feature discharges the output of the switch to ground through a 120-Ω resistor, preventing the output from floating.
6 Pin Configuration and Functions
YFP Package
6-Pin DSBGA
Top View
C
C
B
B
A
A
2 1
Laser Marking View
1 2
Bump View
Pin Functions
PIN
I/O
DESCRIPTION
NO.
NAME
A1
VOUT
O
Switch output
A2
VIN
I
Switch input, bypass this input with a ceramic capacitor to ground
B1
GND
—
B2
ON1
C2
ON2
C1
ON3
Ground
I
Switch control input, active high - Do not leave floating
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
–0.3
4
V
VIN
Input voltage
VOUT
Output voltage
VIN + 0.3
V
IMAX
Maximum continuous switch current
500
mA
Tlead
Maximum lead temperature (10-s soldering time)
300
°C
Tstg
Storage temperature
150
°C
(1)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
IOUT
Output current
VIN
Input voltage
VOUT
Output voltage
CIN
Input capacitor
1 (1)
TA
Operating free-air temperature
–40
(1)
MAX
UNIT
500
mA
3.6
V
1.1
VIN
μF
85
°C
See Application Information.
7.4 Thermal Information
TPS22932B
THERMAL METRIC (1)
YFP (DSBGA)
UNIT
6 PINS
RθJA
Junction-to-ambient thermal resistance
125.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
1.4
°C/W
RθJB
Junction-to-board thermal resistance
26
°C/W
ψJT
Junction-to-top characterization parameter
0.6
°C/W
ψJB
Junction-to-board characterization parameter
26
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Electrical Characteristics
VIN = 1.1 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
VIN = 1.1 V
IIN
Quiescent current
IOUT = 0
VIN = 1.8 V
Full
VIN = 3.6 V
VIN = 1.1 V
IIN(OFF)
OFF-state supply current
IIN(LEAKAGE)
OFF-state switch current
VON = GND, OUT = Open
VON = GND, VOUT = 0
500
860
920
225
300
VIN = 3.6 V
340
650
VIN = 1.1 V
80
225
125
300
340
650
55
70
VIN = 1.8 V
VIN = 2.5 V
IOUT = –200 mA
275
280
80
VIN = 3.6 V
ON-state resistance
140
125
VIN = 1.8 V
Full
Full
VIN = 3.6 V
rON
MIN TYP (1) MAX
VIN = 1.8 V
VIN = 1.2 V
VIN = 1.1 V
rPD
Output pulldown resistance
VIN = 3.3 V, VON = 0, IOUT = 30 mA
ION
ON-state input leakage
current
VON = 1.1 V to 3.6 V or GND
25°C
Full
25°C
75
115
Full
90
mΩ
130
155
135
Full
25°C
nA
80
110
Full
25°C
nA
100
Full
25°C
nA
85
65
Full
25°C
UNIT
150
170
75
120
Ω
1
μA
Control Inputs (ON1, ON2, ON3)
(1)
4
Typical values are at the specified VIN and TA = 25°C.
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Electrical Characteristics (continued)
VIN = 1.1 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Input leakage current
VON
TEST CONDITIONS
VIN = 1.1 V to 3.6 V or GND
Control input voltage
VT+
Positive-going input voltage
threshold
VIN = 1.1 V to 1.8 V
VT–
Negative-going input voltage
threshold
VIN = 1.1 V to 1.8 V
ΔVT
Hysteresis (VT+ – VT–)
VIN = 1.1 V to 3.6 V
TA
1
μA
Full
3.6
V
Full
VIN = 1.8 V to 3.6 V
UNIT
Full
Full
VIN = 1.8 V to 3.6 V
MIN TYP (1) MAX
Full
0.5
0.8
0.6
0.9
0.2
0.6
0.3
0.7
0.2
0.6
V
V
V
7.6 Switching Characteristics, 1.2 V
VIN = 1.2 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
tOFF
tr
Turnon time
Turnoff time
VOUT rise time
TEST CONDITIONS
RL = 500 Ω
RL = 500 Ω
RL = 500 Ω
MIN
350
CL = 1 μF
390
CL = 3 μF
450
CL = 0.1 μF
30
CL = 1 μF
70
CL = 3 μF
160
CL = 0.1 μF
240
CL = 1 μF
240
CL = 3 μF
260
CL = 0.1 μF
tf
VOUT fall time
RL = 500 Ω
TYP
CL = 0.1 μF
MAX
UNIT
μs
μs
μs
20
CL = 1 μF
150
CL = 3 μF
450
μs
7.7 Switching Characteristics, 1.5 V
VIN = 1.5 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
Turnon time
TEST CONDITIONS
RL = 500 Ω
tr
Turnoff time
VOUT rise time
RL = 500 Ω
RL = 500 Ω
CL = 1 μF
320
CL = 3 μF
350
VOUT fall time
RL = 500 Ω
MAX
70
CL = 3 μF
150
CL = 0.1 μF
205
CL = 1 μF
205
CL = 3 μF
220
145
CL = 3 μF
445
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μs
μs
μs
18
CL = 1 μF
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UNIT
30
CL = 1 μF
CL = 0.1 μF
tf
TYP
290
CL = 0.1 μF
tOFF
MIN
CL = 0.1 μF
μs
5
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SLVS802C – AUGUST 2009 – REVISED MAY 2015
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7.8 Switching Characteristics, 1.8 V
VIN = 1.8 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
TEST CONDITIONS
RL = 500 Ω
Turnon time
MIN
CL = 0.1 μF
215
CL = 1 μF
240
CL = 3 μF
260
CL = 0.1 μF
tOFF
tr
RL = 500 Ω
Turnoff time
VOUT rise time
RL = 500
RL = 500 Ω
VOUT fall time
MAX
UNIT
μs
24
CL = 1 μF
60
CL = 3 μF
142
CL = 0.1 μF
165
CL = 1 μF
165
CL = 3 μF
175
CL = 0.1 μF
tf
TYP
μs
μs
18
CL = 1 μF
145
CL = 3 μF
440
μs
7.9 Switching Characteristics, 2.5 V
VIN = 2.5 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
Turnon time
TEST CONDITIONS
RL = 500 Ω
MIN
185
CL = 1 μF
205
CL = 3 μF
225
CL = 0.1 μF
tOFF
tr
Turnoff time
VOUT rise time
RL = 500 Ω
RL = 500 Ω
VOUT fall time
RL = 500 Ω
MAX
UNIT
μs
2
CL = 1 μF
60
CL = 3 μF
140
CL = 0.1 μF
145
CL = 1 μF
150
CL = 3 μF
160
CL = 0.1 μF
tf
TYP
CL = 0.1 μF
μs
μs
18
CL = 1 μF
147
CL = 3 μF
445
μs
7.10 Switching Characteristics, 3 V
VIN = 3 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
Turnon time
TEST CONDITIONS
RL = 500 Ω
MIN
170
CL = 1 μF
190
CL = 3 μF
210
CL = 0.1 μF
tOFF
tr
Turnoff time
VOUT rise time
RL = 500 Ω
RL = 500 Ω
6
VOUT fall time
RL = 500 Ω
60
CL = 3 μF
140
CL = 0.1 μF
140
CL = 1 μF
140
CL = 3 μF
150
UNIT
μs
μs
μs
17
CL = 1 μF
148
CL = 3 μF
450
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MAX
2
CL = 1 μF
CL = 0.1 μF
tf
TYP
CL = 0.1 μF
μs
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7.11 Switching Characteristics, 3.3 V
VIN = 3.3 V, RL_CHIP = 120 Ω, TA = 25°C (unless otherwise noted)
PARAMETER
tON
Turnon time
TEST CONDITIONS
RL = 500 Ω
tr
Turnoff time
VOUT rise time
RL = 500 Ω
RL = 500 Ω
160
CL = 1 μF
175
CL = 3 μF
195
VOUT fall time
RL = 500 Ω
MAX
55
CL = 3 μF
135
CL = 0.1 μF
135
CL = 1 μF
135
CL = 3 μF
145
148
CL = 3 μF
450
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μs
μs
μs
17
CL = 1 μF
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UNIT
20
CL = 1 μF
CL = 0.1 μF
tf
TYP
CL = 0.1 μF
CL = 0.1 μF
tOFF
MIN
μs
7
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SLVS802C – AUGUST 2009 – REVISED MAY 2015
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7.12 Typical Characteristics
0.6
0.08
VIN = 1.1 V
0.07
VIN = 1.2 V
0.06
0.4
VIN = 1.8 V
0.05
V Drop (V)
ON-State Resistance, rON (Ω)
0.5
0.3
VIN = 2.5 V
0.04
VIN = 3.6 V
0.03
0.2
0.02
0.1
0.01
0.00
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
0
0.8
1.0
1.2
1.6
1.4
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
Input Voltage, VIN (V)
ILoad (A)
Figure 1. rON vs VIN
Figure 2. Voltage Drop vs Load Current
ON-State Resistance, R on (ohms)
0.070
250
Quiescent Current, IIN (nA)
0.065
0.060
0.055
0.050
0.045
0.040
-40
200
150
100
50
0
-15
10
35
60
85
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Input Voltage, VIN (V)
ON2 = VIN, ON1–ON3 = 0 V, Iout= 0
Tem perature (°C)
VIN = 3.3 V
Figure 3. rON vs TA
Figure 4. Quiescent Current vs VIN
100
250
IIN(OFF) Current (nA)
Quiescent Current, IIN (nA)
90
200
150
100
50
80
70
60
50
40
30
20
10
0
–40
25
85
0
0.5
1.0
Temperature (°C)
VIN = 3.3 V, ON2 = VIN, ON1–ON3 = 0 V, Iout = 0
3.5
4.0
ON1–ON2–ON3 = 0 V
Figure 5. Quiescent Current vs TA
8
1.5
2.0
2.5
3.0
Input Voltage, VIN (V)
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Figure 6. IIN(OFF) vs VIN
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Typical Characteristics (continued)
100
250
IIN(Leakage) Current, (nA)
IN(OFF) Current, (nA)
90
200
150
100
50
80
70
60
50
40
30
20
10
0
0
25
–40
0.5
85
1.0
1.5
2.0
2.5
VIN = 3.3 V, ON1–ON2–ON3 = 0 V
3.5
4.0
ON1–ON2–ON3 = 0 V, Vout = 0
Figure 7. IIN(OFF) vs Temperature
Figure 8. IIN(Leakage) vs VIN
250
4.0
VIN = 3.6 V
3.5
200
VIN = 3.3 V
3.0
VIN = 3 V
2.5
150
Vout (V)
IIN(Leakage) Current (nA)
3.0
Input Voltage, VIN (V)
Temperature (°C)
100
VIN = 2.5 V
2.0
VIN = 1.8 V
VIN = 1.5 V
VIN = 1.2 V
1.5
1.0
VIN = 1.1 V
0.5
50
0.0
0
–0.5
25
–40
0.2
85
Temperature (°C)
0.3
0.4 0.5 0.6 0.7 0.8
Input Voltage, VON (V)
0.9
1.0
VIN = 3.3 V, ON1–ON2–ON3 = 0 V
Figure 10. ON-Input Threshold
Figure 9. IIN(Leakage) vs Temperature
200
160
180
140
120
140
100
80
60
tOFF
40
trise
100
80
60
40
tfall
20
20
0
–5
0
–4
0
–3
0
–2
0
–1
0
0
10
20
30
40
50
60
70
80
90
10
0
0
–5
0
–4
0
–3
0
–2
0
–1
0
0
10
20
30
40
50
60
70
80
90
10
0
120
tON
trise/tfall (µs)
tON/tOFF (µs)
160
Temperature (°C)
CL = 0.1 µF, RL = 500 Ω, VIN = 3.3 V
Temperature (°C)
CL = 0.1 µF, RL = 500 Ω, VIN = 3.3 V
Figure 11. tON/tOFF vs Temperature
Figure 12. trise/tfall vs Temperature
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Typical Characteristics (continued)
Time (µs)
CL = 3 µF, RL = 500 Ω, VIN = 3.3 V
2.4
2.0
VON
1.2
0.8
0.4
2.0
1.6
200
VON
1.2
120
0.8
80
0.4
40
2.0
VON
IOUT
0.8
0.4
00
00
14
16
00
12
00
0
10
0
80
60
0
40
0
20
0
–2
00
0.0
–0.5
120
IOUT
2.4
80
2.0
1.6
100
60
VON
1.2
40
0.8
20
0.4
0
Output Current (mA)
2.4
00
0
140
2.8
Control Input Voltage (V)
Control Input Voltage (V)
0.0
–50
3.5
3.2
Output Current (mA)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–0.5
–1.0
2.8
–4
160
Figure 16. tON Response
3.5
3.2
–10
–20
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Time (ms)
CL = 0.1 µF, RL = 10 Ω, VIN = 1.2 V
0.0
–0.5
–1.0 –0.5
Figure 18. tON Response
Figure 17. tON Response
10
0
240
Figure 15. tON Response
Time (µs)
CL = 0.1 µF, RL = 500 Ω, VIN = 1.2 V
80
2.4
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Time (ms)
CL = 3 µF, RL = 10 Ω, VIN = 3.3 V
Time (µs)
= 3.3 V
1.2
280
IOUT
0.0
–0.5
–1.0 –0.5
0
0
70
2.8
80
0
60
0
0
50
0
40
30
0
20
0
10
0
00
–1
–2
0
0
0.0
–0.5
350
320
Output Current (mA)
IOUT
Control Input Voltage (V)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–0.5
–1.0
3.5
3.2
Output Current (mA)
Control Input Voltage (V)
2.8
1.6
70
Figure 14. tON Response
3.5
3.2
CL = 3 µF, RL = 500 Ω, VIN
60
Time (µs)
CL = 0.1 µF, RL = 10 Ω, VIN = 3.3 V
Figure 13. tON Response
1.6
0
0
–50
0
40
0.0
–0.5
50
0
0.4
0
80
40
0
0.8
Output Current (mA)
120
0
0
0
80
0
70
60
50
0
0
0
40
0
30
20
10
0
0
00
–1
–2
00
0.0
–0.5
1.2
160
VON
30
0.4
200
1.6
20
0.8
2.0
10
0
1.2
240
0
VON
280
2.4
00
1.6
IOUT
2.8
00
2.0
350
320
–1
2.4
Control Input Voltage (V)
IOUT
–2
Control Input Voltage (V)
2.8
3.5
3.2
Output Current (mA)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–0.5
–1.0
3.5
3.2
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Typical Characteristics (continued)
2.0
VON
IOUT
0.8
0.4
60
VON
1.2
40
0.8
20
0.4
0
–10
–20
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Time (ms)
CL = 3 µF, RL = 10 Ω, VIN = 1.2 V
00
16
00
0
1.6
0.0
–0.5
–1.0 –0.5
14
12
0
0
Time (µs)
CL = 3 µF, RL = 500 Ω, VIN = 1.2 V
10
00
0
80
60
40
0
20
0
0
00
–2
–4
00
0.0
–0.5
80
2.0
Figure 20. tON Response
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
–1.0
IOUT
VON
–2.0
–1.0
–1.5
–2.0
–2.5
–3.0
–10
0
10
20
30 40 50
Time (µs)
CL = 0.1 µF, RL = 500 Ω, VIN = 3.3 V
60
70
80
–3.0
–4.0
–5.0
–6.0
90
Control Input Voltage (V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
Output Current (mA)
Control Input Voltage (V)
Figure 19. tON Response
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
IOUT
VON
–1.0
–1.5
–2.0
–2.5
–3.0
–10
0
30 40 50
Time (µs)
CL = 0.1 µF, RL = 11 Ω, VIN = 3.3 V
60
70
80
500
450
400
350
300
IOUT
250
200
150
100
50
0.0
VON
–50
–100
–1.0
–150
–1.5
–200
–2.0
–250
–2.5
–300
–3.0
–50 0 50 100 150 200 250 300 350 400 450
Time (µs)
CL = 3 µF, RL = 11 Ω, VIN = 3.3 V
Control Input Voltage (V)
Control Input Voltage (V)
10.0
9.0
8.0
7.0
6.0
5.0
IOUT
4.0
3.0
2.0
1.0
0.0
VON
–1.0
–2.0
–1.0
–3.0
–1.5
–4.0
–2.0
–5.0
–2.5
–6.0
–3.0
–200 0 200 400 600 800 1.0 1.2 1.4 1.6 1.8
Time (µs)
CL = 3 µF, RL = 500 Ω, VIN = 3.3 V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
20
Figure 22. tOFF Response
Output Current (mA)
Figure 21. tOFF Response
10
500
450
400
350
300
250
200
150
100
50
0.0
–50
–100
–150
–200
–250
–300
90
Output Current (mA)
1.2
100
IOUT
2.4
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
Figure 23. tOFF Response
Output Current (mA)
1.6
120
Output Current (mA)
2.4
140
2.8
Control Input Voltage (V)
Control Input Voltage (V)
2.8
3.5
3.2
Output Current (mA)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–0.5
–1.0
3.5
3.2
Figure 24. tOFF Response
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IOUT
VON
–1.0
–1.0
–1.5
–2.0
–2.5
–3.0
–10
–1.5
–2.0
–2.5
–3.0
10
20
30 40 50
Time (µs)
CL = 0.1 µF, RL = 500 Ω, VIN = 1.2 V
60
70
80
90
IOUT
VON
–1.0
–1.5
–2.0
–2.5
–3.0
–10
30 40 50
Time (µs)
CL = 0.1 µF, RL = 11 Ω, VIN = 1.2 V
0
10
20
VON
–1.0
–1.0
–1.5
–2.0
–2.5
–3.0
–200 0
–1.5
–2.0
–2.5
–3.0
Control Input Voltage (V)
IOUT
200 400 600 800 1.0 1.2 1.4 1.6 1.8
Time (µs)
CL = 3 µF, RL = 500 Ω, VIN = 1.2 V
70
80
–150
90
250
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
IOUT
VON
–1.0
–1.5
–2.0
–2.5
–3.0
–50
220
200
180
160
140
120
100
80
60
40
20
0.0
–20
–40
–60
–80
–100
–120
–150
50 100 150 200 250 300 350 400 450
Time (µs)
CL = 3 µF, RL = 11 Ω, VIN = 1.2 V
0
Figure 27. tOFF Response
12
60
Figure 26. tOFF Response
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
Output Current (mA)
Control Input Voltage (V)
Figure 25. tOFF Response
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
220
200
180
160
140
120
100
80
60
40
20
0.0
–20
–40
–60
–80
–100
–120
Output Current (mA)
0
250
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
Output Current (mA)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
Control Input Voltage (V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
–0.5
Output Current (mA)
Control Input Voltage (V)
Typical Characteristics (continued)
Figure 28. tOFF Response
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8 Parameter Measurement information
VIN
ON
VOUT
(A)
OFF
DUT
CIN =1 µF
GND
A.
RL
CL
+
–
GND
GND
trise and tfall of the control signal is 100 ns.
Figure 29. Test Circuit
1.8 V
VON
VON
VON/2
VON/2
tr
0V
tON
tOFF
VOUT
VOH
VOUT
A.
tf
0V
VIN/2
VIN/2
90%
10%
90%
10%
VOL
trise and tfall of the control signal is 100 ns.
Figure 30. tON/tOFF Waveforms
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9 Detailed Description
9.1 Overview
TPS22932B is a single-channel, low rON load switch with controlled turnon. The device contains a low rON Pchannel MOSFET that can operate over an input voltage range of 1.1 V to 3.6 V. The switch is controlled by
eight patterns of 3-bit input. The user can choose the logic functions MUX, AND, OR, NAND, NOR, inverter, and
noninverter. All inputs can be connected to VIN or GND. The control pins can be connected to low-voltage
GPIOs allowing it to be controlled by either 1.2-V, 1.8-V, 2.5-V, or 3.3-V logic signals while keeping extremely
low quiescent current. A 120-Ω on-chip load resistor is available for output quick discharge when the switch is
turned off. The rise time (slew rate) of the device is internally controlled to avoid inrush current.
9.2 Functional Block Diagram
VIN
A2
Turn-On Slew Rate
Controlled Driver
ON1
ON2
ON3
Y
B2
C2
Control
Logic
Configurable
Logic
C1
ESD Protection
A1
VOUT
Output Discharge
B1
GND
9.3 Feature Description
9.3.1 Configurable Logic Function
The switch is controlled by eight patterns of 3-bit input. The user can choose the logic functions MUX, AND, OR,
NAND, NOR, inverter, and noninverter. All inputs can be connected to VIN or GND. The control pins can be
connected to low-voltage GPIOs allowing it to be controlled by either 1.2-V, 1.8-V, 2.5-V, or 3.3-V logic signals
while keeping extremely low quiescent current.
9.3.2 Quick Output Discharge
The TPS22932B includes the Quick Output Discharge (QOD) feature. When the switch is disabled, a discharge
resistance with a typical value of 120 Ω is connected between the output and ground. This resistance pulls down
the output and prevents it from floating when the device is disabled.
14
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9.4 Device Functional Modes
9.4.1 Logic Configurations
Table 1. Configurable Logic Function Table
INPUTS
ON3
ON2
L
L
SWITCH CONTROL
ON1
Y
L
L
OFF
L
H
OFF
L
H
L
ON
L
H
H
ON
H
L
L
OFF
H
L
H
ON
H
H
L
OFF
H
H
H
ON
ON1
4
Y
ON2
ON3
Figure 31. Logic Diagram (Positive Logic)
Table 2. Function Selection Table
LOGIC FUNCTION
A/B
FIGURE NO.
2-to-1 data selector
Figure 32
2-input AND gate
Figure 33
2-input OR gate with one inverted input
Figure 34
2-input NAND gate with one inverted input
Figure 34
2-input AND gate with one inverted input
Figure 35
2-input NOR gate with one inverted input
Figure 35
2-input OR gate
Figure 36
Inverter
Figure 37
Noninverted buffer
Figure 38
ON3
ON2
A
GND
ON1
B
VOUT
VIN
A/B
GND
A
Y
A
GND
ON3
ON2
GND
ON1
VOUT
VIN
B
Bump View
B
A
B
Y
Bump View
Figure 32. 2-to-1 Data Selector
Figure 33. 2-Input AND Gate
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A
GND
ON3
ON2
GND
ON1
VOUT
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A
B
Y
A
B
A
B
VIN/VCC
VIN
Y
GND
Bump View
GND
ON2
GND
ON1
VOUT
VIN
B
A
B
Y
VIN/VCC
Bump View
Figure 34. 2-Input OR Gate With One Inverted
Input, 2-Input NAND Gate With One Inverted Input
A
ON3
ON3
ON2
GND
ON1
VOUT
VIN
Figure 36. 2-Input OR Gate
A
B
A
B
ON3
ON2
GND
ON1
VOUT
VIN
Y
A
B
GND
Y
Bump View
A
Y
VIN/VCC
Bump View
Figure 35. 2-Input AND Gate With One Inverted
Input, 2-Input NOR Gate With One Inverted Input
GND
ON3
ON2
GND
ON1
VOUT
VIN
Figure 37. Inverter
A
A
Y
Bump View
Figure 38. Noninverted Buffer
16
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10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
10.1.1 ON and OFF Control
The ON pin controls the state of the switch. Activating ON continuously holds the switch in the on state so long
as there is no fault. ON is active HI and has a low threshold making it capable of interfacing with low voltage
signals. The ON pin is compatible with standard GPIO logic threshold. It can be used with any microcontroller
with 1.2-V, 1.8-V, 2.5-V, or 3.3-V GPIOs.
10.1.2 Input Capacitor
To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor must be placed between VIN and GND . A 1-μF ceramic
capacitor, CIN, placed close to the pins is usually sufficient. Higher values of CIN can be used to further reduce
the voltage drop during higher current application. When switching a heavy load, TI recommends to have an
input capacitor about 10 or more times higher than the output capacitor to avoid any supply drop.
10.1.3 Output Capacitor
Due to the integral body diode in the PMOS switch, a CIN greater than CL is highly recommended. A CL greater
than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current flow
through the body diode from VOUT to VIN.
10.2 Typical Application
VBATT
VIN
SMPS
(see Note A)
LOAD
VOUT
ON1
CIN = 1 µF
CL
ON2
CL
ON3
GND
RL
TPS22932B
GND
GND
A.
Switched-mode power supply
Figure 39. Typical Application
10.2.1 Design Requirements
For this example, follow the design parameters listed in Table 3.
Table 3. Design Parameters
DESIGN PARAMETERS
EXAMPLE VALUE
VIN
3.3 V
CL
4.7 µF
Maximum Acceptable Inrush Current
150 mA
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10.2.2 Detailed Design Procedure
10.2.2.1 VIN to VOUT Voltage Drop
The VIN to VOUT voltage drop in the device is determined by the rON of the device and the load current. The rON
of the device depends upon the VIN condition of the device. Refer to the rON specification of the device in the
Electrical Characteristics table of this data sheet. When the rON of the device is determined based upon the VIN
conditions, use Equation 1 to calculate the VIN to VOUT voltage drop:
ΔV = ILOAD × rON
where
•
•
•
•
ΔV = Voltage drop from VIN to VOUT
ILOAD = Load current
rON = ON-resistance of the device for a specific VIN
An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.
(1)
10.2.2.2 Managing Inrush Current
When the switch is enabled, the output capacitors must be charged up from 0-V to VIN. This charge arrives in the
form of inrush current. Inrush current can be calculated using the following equation:
dv
Inrush Current = C ´
dt
where
•
C = Output capacitance
•
dv
= Output slew rate
dt
(2)
The TPS22932B offers a very slow controlled rise time for minimizing inrush current. This device can be selected
based upon the maximum acceptable slew rate which can be calculated using the design requirements and the
inrush current equation. An output capacitance of 4.7 μF will be used because the amount of inrush increases
with output capacitance:
dv
150 mA = 4.7 m F ´
dt
(3)
dv
= 31.9 V /ms
dt
(4)
To ensure an inrush current of less than 150 mA, a device with a slew rate less than 31.9 V/ms must be used.
The TPS22932B has a typical rise time of 145 μs at 3.3 V. This results in a slew rate of 22.8 V/ms which meets
the requirement.
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10.2.3 Application Curve
Figure 40. TPS22932B Inrush Current With 4.7-µF Output Capacitor
11 Power Supply Recommendations
The device is designed to operate with a VIN range of 1.1 V to 3.6 V. This supply must be well regulated and
placed as close to the device terminal as possible with the recommended 1-μF bypass capacitor. If the supply is
located more than a few inches from the device terminals, additional bulk capacitance may be required in
addition to the ceramic bypass capacitors. If additional bulk capacitance is required, an electrolytic, tantalum, or
ceramic capacitor of 10 μF may be sufficient.
12 Layout
12.1 Layout Guidelines
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND will help minimize the parasitic
electrical effects along with minimizing the case to ambient thermal impedance.
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12.2 Layout Example
VIA to Power Ground Plane
To GPIO
control
To GPIO
control
ON2
ON3
ON1
GND
To GPIO
control
VOUT Bypass
Capacitor
VIN
VOUT
VIN Bypass
Capacitor
Figure 41. Layout Example
20
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13 Device and Documentation Support
13.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
13.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS22932BYFPR
ACTIVE
DSBGA
YFP
6
3000
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
(483, 485)
TPS22932BYFPT
ACTIVE
DSBGA
YFP
6
250
RoHS & Green
SNAGCU
Level-1-260C-UNLIM
-40 to 85
(483, 485)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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