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TPS22960
SLVS914D – APRIL 2009 – REVISED FEBRUARY 2016
TPS22960 Low-Input Voltage, Dual-Load Switch With Controlled Turnon
1 Features
3 Description
•
•
•
The TPS22960 is a small low-rON dual-channel load
switch with controlled turnon. The devices contain two
P-channel MOSFETs that can operate over an input
voltage range of 1.62 V to 5.5 V. Each switch is
independently controlled by on/off inputs (ON1 and
ON2), which are capable of interfacing directly with
low-voltage control signals. In TPS22960 a 85-Ω onchip load resistor is added for quick discharge when
the switch is turned off.
1
•
•
•
•
•
•
•
Integrated Dual-Load Switch
Input Voltage Range: 1.62 V to 5.5 V
Low ON-State Resistance
– rON = 342 mΩ at VIN = 5.5 V
– rON = 435 mΩ at VIN = 3.3 V
– rON = 523 mΩ at VIN = 2.5 V
– rON = 737 mΩ at VIN = 1.8 V
500-mA Maximum Continuous Switch Current
Low Quiescent Current and Shutdown Current
Controlled Switch Output Rise Time:
75 μs or 660 μs
Integrated Quick Output Discharge Transistor
ESD Performance Tested Per JESD 22
– 2000-V Human Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
8-Pin SOT (DCN) Package: 3 mm × 3 mm
8-Pin UQFN (RSE) Package: 1.5 mm × 1.5 mm
2 Applications
•
•
•
•
The rise time (slew-rate) of the device is internally
controlled in order to avoid inrush current, and it can
be slowed down if needed using the SR pin: at 3.3 V,
TPS22960 features a 75-μs rise time with the SR pin
tied to ground and 660-μs with the SR pin tied to
high.
The TPS22960 is available in a space-saving 8-pin
UQFN package and in an 8-pin SOT package. It is
characterized for operation over the free-air
temperature range of –40°C to 85°C.
Device Information(1)
PART NUMBER
TPS22960
GPS Devices
Cell Phones/PDAs
MP3 Players
Digital Cameras
PACKAGE
BODY SIZE (NOM)
SOT (8)
2.90 mm × 1.63 mm
UQFN (8)
1.50 mm × 1.50 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Simplified Diagram
ON1
VIN1
CL
RL
Load 1
1 µF
CL
RL
Load 2
VOUT1
SR
VIN2
VOUT2
1 µF
ON2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22960
SLVS914D – APRIL 2009 – REVISED FEBRUARY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
3
3
4
4
5
5
6
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics ..........................................
Typical DC Characteristics........................................
Typical Switching Characteristics .............................
Parameter Measurement Information ................ 11
Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 13
8.4 Device Functional Modes........................................ 13
9
Application and Implementation ........................ 14
9.1 Application Information............................................ 14
9.2 Typical Application ................................................. 14
10 Power Supply Recommendations ..................... 16
11 Layout................................................................... 16
11.1 Layout Guidelines ................................................. 16
11.2 Layout Example .................................................... 17
12 Device and Documentation Support ................. 19
12.1
12.2
12.3
12.4
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
13 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (July 2015) to Revision D
•
Page
Made changes to Application Information ............................................................................................................................. 1
Changes from Revision B (August 2013) to Revision C
Page
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
Updated the Thermal Information table to remove 220°C/W and 116°C/W from the junction-to-ambient thermal
resistance, and 123°C/W and 60°C/W from the junction-to-case (top) thermal resistance .................................................. 4
•
Changed values > 100°C/W in the Thermal Information table to contain only 3 significant figures ..................................... 4
Changes from Revision A (August 2011) to Revision B
Page
•
Clarified text in the Description............................................................................................................................................... 1
•
Added TJ to the Absolute Maximum Ratings table................................................................................................................. 3
•
Updated Table 2 in Device Functional Modes...................................................................................................................... 13
Changes from Original (April 2009) to Revision A
Page
•
Changed rON values for VINX = 1.8 V (25°C) From: Typ 714, Max 855 To: Typ 737, Max 1100 ........................................... 5
•
Changed rON values for VINX = 1.8 V (Full) From: Max 995 To: Max 1300 ........................................................................... 5
•
Changed rON values for VINX = 1.62 V (25°C) From: Typ 830, Max 950 To: Typ 848, Max 1300 ......................................... 5
•
Changed rON values for VINX = 1.62 V (Full) From: Max 1100 To: Max 1500 ....................................................................... 5
2
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SLVS914D – APRIL 2009 – REVISED FEBRUARY 2016
5 Pin Configuration and Functions
DCN PACKAGE
8-PIN SOT
TOP VIEW
RSE PACKAGE
8-PIN UQFN
TOP VIEW
VIN2
VIN1
1
8
VOUT1
ON1
2
7
SR
ON2
3
6
GND
VIN1
1
ON1
2
SR
3
8
4
7
ON2
6
GND
5
VOUT2
VOUT1
VIN2
5
4
VOUT2
Pin Functions
PIN
NAME
I/O
DESCRIPTION
SOT
UQFN
VIN1
1
1
I
Switch 1 input; bypass this input with a ceramic capacitor to GND
ON1
2
2
I
Switch 1 control input, active high. Do not leave floating.
ON2
3
7
I
Switch 2 control input, active high. Do not leave floating.
VIN2
4
8
I
Switch 2 input; bypass this input with a ceramic capacitor to GND
VOUT2
5
5
O
Switch 2 output
GND
6
6
—
Ground
SR
7
3
I
Slew rate control pin. SR = GND translates into a 75-μs rise time; SR = high translates into
a 660-μs rise time
VOUT1
8
4
O
Switch 1 output
6 Specifications
6.1 Absolute Maximum Ratings
(1)
(see
)
VIN
Input voltage
VOUT
Output voltage
VON
Input voltage
IMAX
Maximum continuous switch current
TA
Operating free-air temperature
TJ
Maximum junction temperature
Tstg
Storage temperature
(1)
MIN
MAX
UNIT
–0.3
6
V
VIN + 0.3
V
6
V
–0.3
–40
–65
0.5
A
85
°C
125
°C
150
°C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
VIN
Input voltage
VOUT
Output voltage
VIH
High-level input voltage: ON1, ON2, SR
VIL
Low-level input voltage: ON1, ON2, SR
CIN
Input capacitor
(1)
MIN
MAX
1.62
5.5
V
VIN
V
VINx = 3.0 V to 5.5 V
1.5
5.5
VINx = 1.62 V to 3.0 V
1.4
5.5
VINx = 3.0 V to 5.5 V
0.5
VINx = 1.62 V to 3.0 V
0.4
UNIT
V
V
1 (1)
μF
See Application Information
6.4 Thermal Information
TPS22960
THERMAL METRIC (1)
DCN (SOT)
RSE (UQFN)
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
254
124
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
122
67
°C/W
RθJB
Junction-to-board thermal resistance
181
31.5
°C/W
ψJT
Junction-to-top characterization parameter
22
2.9
°C/W
ψJB
Junction-to-board characterization parameter
178
31.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
—
°C/W
(1)
4
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics (SPRA953).
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SLVS914D – APRIL 2009 – REVISED FEBRUARY 2016
6.5 Electrical Characteristics
VIN = 1.62 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Quiescent current
(each switch)
IIN
IIN(OFF)
OFF-state supply
current (each switch)
TA
MIN TYP (1)
VINx = 5.5 V
Full
0.64
2
VINx = 3.3 V
Full
0.35
1.2
VINx = 2.5 V
Full
0.24
0.8
VINx = 1.8 V
Full
0.15
0.5
VINx = 5.5 V
Full
0.47
3.6
VINx = 3.3 V
Full
0.25
1.8
VINx = 2.5 V
Full
0.18
1.3
Full
0.11
0.9
25°C
342
400
TEST CONDITIONS
IOUTx = 0, VINx = VON
VON = GND, VOUTx = Open
VINx = 1.8 V
VINx = 5.5 V
VINx = 3.3 V
rON
ON-state resistance
(each switch)
IOUT = –200 mA
VINx = 2.5 V
VINx = 1.8 V
VINx = 1.62 V
rPD
Output pulldown
resistance
VIN = 3.3 V, VON = 0, IOUT = 30 mA
ION
ON-state input leakage
current
VON = 1.62 V to 5.5 V or GND
(1)
Full
25°C
435
737
620
mΩ
1100
1300
848
Full
25°C
μA
500
720
Full
25°C
μA
595
523
Full
25°C
UNIT
465
Full
25°C
MAX
1300
1500
85
Full
120
Ω
0.25
μA
MAX
UNIT
Typical values are at TA = 25°C.
6.6 Switching Characteristics
VIN = 3.3 V, TA = 25°C, RL_CHIP = 85 Ω (unless otherwise noted)
PARAMETER
TEST CONDITIONS
tON
Turn-ON time
RL = 33 Ω, CL = 0.1 μF
tOFF
Turn-OFF time
RL = 33 Ω, CL = 0.1 μF
tr
VOUT rise time
RL = 33 Ω, CL = 0.1 μF
tf
VOUT fall time
RL = 33 Ω, CL = 0.1 μF
(1)
SR = VIN
MIN TYP (1)
635
SR = GND
67
SR = VIN
4.5
SR = GND
4.2
SR = VIN
660
SR = GND
75
SR = VIN
4.5
SR = GND
4.5
μs
μs
μs
μs
Typical values are at the specified VIN = 3.3 V and TA = 25°C
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6.7 Typical DC Characteristics
1100
900
1000
TA = 85°C
800
TA = 25°C
700
VIN = 1.8 V
Resitance (mxW )
800
Resistance (m W )
900
700
TA = -40°C
600
500
400
600
VIN = 2.5 V
500
VIN = 3.3 V
400
300
VIN = 5.5 V
200
300
100
200
-50
0
0
1
2
3
VIN (V)
4
5
6
-25
0
25
50
75
100
Temperature (°C)
Figure 1. ON Resistance vs Input Voltage
Figure 2. ON Resistance vs Temperature
0.7
1
VIN = 3.3 V
SR = High
SR = High
0.9
0.6
0.8
0.7
0.6
0.4
IIN (µA)
IIN (µA)
0.5
IIN
0.3
0.5
0.4
IIN (Off)
TA = 85°C
0.3
0.2
0.2
IIN (Leakage)
0.1
TA = 25°C
0.1
0
-50
TA = -40°C
0
-25
0
25
50
75
0
100
1
2
3
4
5
6
VIN (V)
Temperature (°C)
Figure 3. Quiescent Current vs Temperature
Figure 4. Quiescent Current vs Input Voltage
6.0
VIN = 5.5 V
5.5
VIN = 5.0 V
5.0
VIN = 4.5 V
4.5
4.0
VIN = 3.3 V
VIN = 3.6 V
VOUT (V)
3.5
3.0
VIN = 3.0 V
2.5
VIN = 2.5 V
2.0
VIN = 1.8 V
1.5
1.0
0.5
0.0
-0.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VON (V)
Figure 5. ON Threshold
6
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6.8 Typical Switching Characteristics
1400
160
SR High
TA = -40°C
1300
TA = 25°C
SR Low
TA = -40°C
145
TA = 25°C
1200
TA = 85°C
130
TA = 85°C
1100
115
t R (µs)
t R (µs)
1000
900
100
800
85
700
70
600
55
500
400
40
1
2
3
4
5
6
1
2
3
VIN (V)
4
5
6
VIN (V)
Figure 6. Rise Time vs Input Voltage
Figure 7. Rise Time vs Input Voltage
700
5.0
SR = High or Low
SR High
4.5
600
4.0
500
t R (µs)
t F (µs)
3.5
3.0
400
300
2.5
200
2.0
100
1.5
0
-50
1.0
1
2
3
4
5
SR Low
6
-25
VIN (V)
0
25
50
75
100
Temperature (°C)
Figure 8. Fall Time vs Input Voltage
Figure 9. Rise Time vs Temperature
9
1400
SR High
8
1200
7
1000
t OFF (µs)
t ON (µs)
6
800
600
5
SR Low
4
SR High
400
3
SR Low
200
2
1
0
1
2
3
4
5
6
1
2
3
4
5
6
VIN (V)
VIN (V)
Figure 10. On Time vs Input Voltage
Figure 11. Off Time vs Input Voltage
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Typical Switching Characteristics (continued)
CLoad = 10 µF
IOUT = 100 mA
V IN = 1.8 V
SR = High
CLoad = 0.1 µF
IOUT = 100 mA
V IN = 1.8 V
SR = High
V ON
500 mV/div
V ON
500 mV/div
IOUT
20 mA/div
IOUT
20 mA/div
1 ms/div
1 ms/div
Figure 13. tON Response
Figure 12. tON Response
CLoad = 0.1 µF
IOUT = 100 mA
V IN = 5.5 V
SR = High
CLoad = 10 µF
IOUT = 100 mA
V IN = 5.5 V
SR = High
V ON
500 mV/div
V ON
500 mV/div
IOUT
20 mA/div
IOUT
20mA/div
500 µs/div
500 µs/div
Figure 14. tON Response
Figure 15. tON Response
CLoad = 0.1 µF
IOUT = 100 mA
V IN = 1.8 V
SR = High
I OUT
20 mA/div
IOUT
20 mA/div
VON
500 mV/div
V ON
500 mV/div
5 µs/div
100 µs/div
Figure 16. tOFF Response
8
C Load = 10 µF
I OUT = 100 mA
V IN = 1.8 V
SR = High
Figure 17. tOFF Response
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Typical Switching Characteristics (continued)
CLoad = 0.1 µF
IOUT = 100 mA
V IN = 5.5 V
SR = High
IOUT
20 mA/div
CLoad = 10 µF
I OUT = 100 mA
V IN = 5.5 V
SR = High
IOUT
20 mA/div
VON
500 mV/div
VON
500 mV/div
5 µs/div
200 µs/div
Figure 18. tOFF Response
Figure 19. tOFF Response
CLoad = 0.1 µF
IOUT = 100 mA
VIN = 1.8 V
SR = Low
CLoad = 10 µF
IOUT = 100 mA
VIN = 1.8 V
SR = Low
VON
500 mV/div
V ON
500 mV/div
IOUT
20 mA/div
I OUT
20 mA/div
500 µs/div
100 µs/div
Figure 21. tON Response
Figure 20. tON Response
CLoad = 0.1 µF
IOUT = 100 mA
VIN = 5.5 V
SR = Low
CLoad = 10 µF
I OUT = 100 mA
V IN = 5.5 V
SR = Low
VON
500 mV/div
VON
500 mV/div
IOUT
20 mA/div
IOUT
20 mA/div
50 µs/div
500 µs/div
Figure 22. tON Response
Figure 23. tON Response
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Typical Switching Characteristics (continued)
CLoad = 0.1 µF
I OUT = 100 mA
V IN = 1.8 V
SR = Low
IOUT
20 mA/div
VON
500 mV/div
VON
500 mV/div
200 µs/div
5 µs/div
Figure 25. tOFF Response
Figure 24. tOFF Response
CLoad = 0.1 µF
I OUT = 100 mA
V IN = 5.5 V
SR = Low
IOUT
20 mA/div
CLoad = 10 µF
I OUT = 100 mA
V IN = 5.5 V
SR = Low
IOUT
20 mA/div
VON
500 mV/div
VON
500 mV/div
200 µs/div
5 µs/div
Figure 27. tOFF Response
Figure 26. tOFF Response
10
CLoad = 10 µF
I OUT = 100 mA
V IN = 1.8 V
SR = Low
IOUT
20 mA/div
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7 Parameter Measurement Information
VIN
ON
+
–
VOUT
(A)
OFF
CIN =1 µF
GND
RL
CL
TPS22960
GND
GND
TEST CIRCUIT
1.8 V
VON
VON
VON/2
VON/2
tr
0V
tON
tOFF
VOUT/2
VOUT/2
90%
VOUT
VOH
VOUT
tf
0V
10%
90%
10%
VOL
tON/tOFF WAVEFORMS
A.
trise and tfall of the control signal is 100 ns.
Figure 28. Test Circuit and tON/tOFF Waveforms
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8 Detailed Description
8.1 Overview
The TPS22960 is a dual-channel load switch. The two channels can be independently controlled using the ONx
pins. Each channel has an 85-Ω quick discharge resistance from VOUTX to GND when disabled. A single control
pin (SR) is used to set the slew rate for both channels..
8.2 Functional Block Diagram
VIN1
ON1
SR
Control
Logic
ON2
VOUT1
Output discharge
GND
Output discharge
VOUT2
VIN2
12
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8.3 Feature Description
This section will discuss the features of the TPS22960 which have been summarized in Table 1.
Table 1. Feature Summary
(1)
DEVICE
rON AT 3.3 V
(TYP)
SLEW RATE AT 3.3 V
(TYP)
QUICK OUTPUT
DISCHARGE (1)
MAX OUTPUT
CURRENT
ENABLE
TPS22960
435 mΩ
75 μs with SR = low
660 μs with SR = high
Yes
500 mA
Active High
This feature discharges the output of the switch to ground through an 85-Ω resistor, preventing the output from floating.
8.3.1 Output Slew Rate (SR) Control
The slew rate (rise time) of the device is internally controlled in order to avoid inrush current, and it can be
slowed down if needed using the SR pin. At 3.3 V, TPS22960 features a 75-μs rise time with the SR pin tied to
ground, and a 660-μs rise time with the SR pin tied high. Both channels will have the same slew rate set by the
SR pin.
8.3.2 Quick Output Discharge (QOD)
Each channel of the TPS22960 includes an independent QOD feature. When the channel is disabled, a
discharge resistor is connected between VOUTx and GND. This resistor has a typical value of 85 Ω and prevents
the output from floating while the switch is disabled.
8.4 Device Functional Modes
Table 2. Configurable Logic Function Table
ONx
VINx TO VOUTx
VOUTx TO GND
L
OFF
ON
H
ON
OFF
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
9.1.1 ON/OFF Control
The ON pin controls the state of the switch. Activating ON continuously holds the switch in the on state, as long
as there is no fault. ON is active HI and has a low threshold, making it capable of interfacing with low voltage
signals. The ON pin is compatible with standard GPIO logic threshold. It can be used with any microcontroller
with 1.2-V, 1.8-V, 2.5-V, or 3.3-V GPIOs.
9.1.2 Input Capacitor
To limit voltage drop or voltage transients, sufficient capacitance needs to be placed on the input side of the load
switch (from VIN to GND). In most cases, a 1-μF ceramic capacitor, CIN, placed close to the pins is usually
sufficient. However, when switching heavy capacitive loads, higher values of CIN may be needed to prevent the
system supply voltage from dropping.
9.1.3 Output Capacitor
The integral body diode in the PMOS switch will allow reverse current flow if VOUT exceeds VIN. A CL greater than
CIN can cause VOUT to exceed VIN if the system supply is removed. In the case where the system supply could
be removed and reverse current is a concern, a CIN greater than CL is recommended.
9.2 Typical Application
ON1
VIN1
CL
RL
Load 1
1 µF
CL
RL
Load 2
VOUT1
SR
VIN2
VOUT2
1 µF
ON2
Figure 29. Typical Application Schematic
14
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Typical Application (continued)
9.2.1 Design Requirements
For this design example, use input parameters in Table 3.
Table 3. Design Parameters
PARAMETER
EXAMPLE VALUE
VIN
3.3 V
CL
22 µF
Maximum acceptable inrush current
200 mA
9.2.2 Detailed Design Procedure
9.2.2.1 Inrush Current
When the switch is enabled, the output capacitors must be charged up from 0 V to the set value (in this example,
3.3 V). This charge arrives in the form of inrush current. Inrush current can be calculated using the following
equation:
Inrush Current = C × dV / dt
(1)
Where:
C = output capacitance
dV = output voltage
dt = rise time
The TPS22960 offers selectable rise time control for VOUT. This feature allows the user to control the inrush
current during turnon. Equation 1 can be used to find the required rise time to limit the inrush current to the
design requirements
200 mA = 22 µF × (3.3 V × 80%) / dt
(2)
dt = 290 µs (4)
To ensure an inrush current of less than 200 mA, SR must be set high for a rise time greater than 290 µs. The
following application curves show the different inrush for each SR setting in this design example.
9.2.3 Application Curves
Figure 30. Inrush Current with SR = Low
Figure 31. Inrush Current with SR = High
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10 Power Supply Recommendations
The device is designed to operate from an input voltage range of 1.62 V to 5.5 V. The power supply should be
well-regulated and placed as close to the device terminals as possible. It must be able to withstand all transient
and load current steps. In most situations, using an input capacitance of 1 µF is sufficient to prevent the supply
voltage from dipping when the switch is turned on. In cases where the power supply is slow to respond to a large
transient current or large load current step, additional bulk capacitance may be required on the input
The requirements for larger input capacitance can be mitigated by selecting the slower slew rate +SR=high. This
will cause the load switch to turn on more slowly and limit the inrush current.
11 Layout
11.1 Layout Guidelines
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal and short-circuit operation. Using wide traces for VIN, VOUT, and GND will help minimize the parasitic
electrical effects along with minimizing the case to ambient thermal impedance.
16
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11.2 Layout Example
Gnd
Via
VIN Bypass
Capacitor
VIN1
VOUT1
To GPIO
control
ON1
SR
To GPIO
control
ON2
GND
VIN2
VOUT2
To GPIO
control
Gnd
Via
VIN Bypass
Capacitor
Gnd
Via
Figure 32. DCN Package Layout
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Layout Example (continued)
VIN Bypass
Capacitor
Gnd
Via
VIN Bypass
Capacitor
VIN1
To GPIO
control
ON1
To GPIO
control
SR
VIN2
GND
VOUT1
To GPIO
control
ON2
Gnd
Via
VOUT2
Gnd
Via
Figure 33. RSE Package Layout
18
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12 Device and Documentation Support
12.1 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.2 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS22960DCNR
ACTIVE
SOT-23
DCN
8
3000
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
(NFRO, NFRR)
TPS22960RSER
ACTIVE
UQFN
RSE
8
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
72
TPS22960RSET
ACTIVE
UQFN
RSE
8
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
72
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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