TPS22995
SLVSGT1 – DECEMBER 2022
TPS22995 5.5-V, 3.8-A, 18-mΩ On-Resistance Load Switch with Adjustable Rise Time
1 Features
3 Description
•
•
•
•
•
The TPS22995 is a single-channel load switch that
provides a configurable rise time to minimize inrush
current. The device contains an N-channel MOSFET
that can operate over an input voltage range of 0.4
V to 5.5 V and can support a maximum continuous
current of 3.8 A.
•
•
•
•
•
Input operating voltage range (VIN): 0.4 V – 5.5 V
Bias voltage supply (VBIAS): 1.5 V – 5.5 V
Maximum continuous current: 3.8 A
On-resistance (RON): 18 mΩ (typ.)
Adjustable slew rate control through external
capacitor
Quick Output Discharge (QOD): 100 Ω (typ.)
Thermal shutdown
Smart ON pin pulldown (RPD,ON):
– ON ≥ VIH (ION): 25 nA (max.)
– ON ≤ VIL (RPD,ON): 500 kΩ (typ.)
Low power consumption:
– ON state (IQ): 10 uA (typ.)
– OFF state (ISD): 0.1 uA (typ.)
2 Applications
•
•
•
•
Notebook PC
Tablets
Industrial PC
Discrete industrial solutions
The switch is controlled by an on and off input
(ON), which is capable of interfacing directly with low
voltage control signals. The TPS22995 also has a
Quick Output Discharge when the switch is turned off,
pulling the output voltage down to a known 0-V state.
The TPS22995 is available in two different 6-pin
WQFN packages with both 0.4-mm and 0.5-mm
options. The device is characterized for operation
over the free-air temperature range of –40°C to
+125°C.
Package Information
PACKAGE(1)
PART NUMBER
TPS22995
(1)
BODY SIZE (NOM)
RZF (WQFN, 6)
1.25 × 0.85 mm
RZG (WQFN, 6)
1.50 × 0.75 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
TPS22995
VOUT
VIN
VIN
Power Supply
Charge
Pump
VBIAS
VOUT
Load
Cin
VBIAS
Thermal
Shutdown
CT
CT
CT
ON
OFF
ON
Control Logic
Smart
Pull
Down
ON
GND
Driver
RQOD
Typical Application Diagram
GND
TPS22995 Block Diagram
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS22995
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SLVSGT1 – DECEMBER 2022
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics (VBIAS = 5 V)..................... 5
6.6 Electrical Characteristics (VBIAS = 3.3 V).................. 5
6.7 Electrical Characteristics (VBIAS = 1.5 V).................. 6
6.8 Switching Characteristics (VBIAS = 5 V).................... 7
6.9 Switching Characteristics (VBIAS = 3.3 V)................. 8
6.10 Switching Characteristics (VBIAS = 1.5 V)............... 8
6.11 Typical Characteristics............................................ 10
7 Parameter Measurement Information.......................... 12
8 Detailed Description......................................................13
8.1 Overview................................................................... 13
8.2 Functional Block Diagram......................................... 13
8.3 Feature Description...................................................14
8.4 Device Functional Modes..........................................15
9 Application and Implementation.................................. 16
9.1 Application Information............................................. 16
9.2 Typical Application.................................................... 16
9.3 Power Supply Recommendations.............................17
9.4 Layout....................................................................... 18
10 Device and Documentation Support..........................19
10.1 Receiving Notification of Documentation Updates..19
10.2 Support Resources................................................. 19
10.3 Trademarks............................................................. 19
10.4 Electrostatic Discharge Caution..............................19
10.5 Glossary..................................................................19
11 Mechanical, Packaging, and Orderable
Information.................................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
2
DATE
REVISION
NOTES
December 2022
*
Initial Release
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5 Pin Configuration and Functions
VBIAS
CT
CT
VBIAS
VIN
VOUT
VOUT
VIN
ON
GND
GND
ON
Figure 5-1. TPS22995 RZF, RZG 6-Pin WQFN Package (Top View Left, Bottom View Right)
Table 5-1. Pin Functions
PIN
NAME
NO.
TYPE(1)
DESCRIPTION
VBIAS
1
P
Bias voltage
VIN
2
P
Supply input
ON
3
I
Enable pin
GND
4
G
Ground
VOUT
5
P
Output voltage
CT
6
I
Timing pin, can control the slew rate of the output through a capacitor to GND
(1)
I = Input, O = Output, I/O = Input or Output, G = Ground, P = Power.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VIN
Input Voltage
–0.3
6
V
VBIAS
Bias Voltage
–0.3
6
V
VON, VPG, VQOD Control Pin Voltage
VCT
CT Pin Voltage
IMAX
Maximum Current
TJ
Junction temperature
Tstg
Storage temperature
(1)
–0.3
6
V
15
V
3.8
A
Internally
Limited
°C
150
°C
–65
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001(1)
±2000
Charged device model (CDM), per ANSI/ESDA/
JEDEC JS-002(2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input Voltage
0.4
5.5
V
VBIAS
Bias Voltage
1.5
5.5
V
VIH
ON Pin High Voltage Range
0.8
5.5
V
VIL
ON Pin Low Voltage Range
0
0.35
V
TA
Ambient Temperature
-40
125
°C
6.4 Thermal Information
TPS22995
THERMAL
UNIT
6 PINS
RZF(WQFN-HR)
RZG(WQFN-HR)
RθJA
Junction-to-ambient thermal resistance
143.5
141.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
132.1
133.7
°C/W
RθJB
Junction-to-board thermal resistance
47.8
41.2
°C/W
ΨJT
Junction-to-top characterization parameter
5.2
5.3
°C/W
YJB
Junction-to-board characterization parameter
47.4
40.8
°C/W
(1)
4
METRIC(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics (VBIAS = 5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
Power Consumption
25 °C
ISD,VBIA
S
VBIAS Shutdown Current
ON = 0V
0.1
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
IQ,VBIAS VBIAS Quiescent Current
ON > VIH
VIN Shutdown Current
ON = 0V
ION
ON pin leakage
ON = VBIAS
uA
1
uA
10
uA
—40 °C to 85 °C
20
uA
—40 °C to 125 °C
20
uA
25 °C
ISD,VIN
uA
0.5
0.1
—40 °C to 85 °C
—40 °C to 125 °C
uA
1
uA
2
uA
—40 °C to 125 °C
0.1
uA
25 °C
18
mΩ
Performance
VIN = 5V, IOUT=-200mA
—40 °C to 85 °C
24
mΩ
—40 °C to 125 °C
27
mΩ
25 °C
VIN = 3.3V, IOUT=-200mA
17
—40 °C to 85 °C
—40 °C to 125 °C
25 °C
RON
On-Resistance
VIN = 1.8V, IOUT=-200mA
RQOD
Smart Pull Down Resistance
ON < VIL
mΩ
23
mΩ
25
mΩ
17
—40 °C to 85 °C
mΩ
23
mΩ
25
mΩ
17
mΩ
—40 °C to 85 °C
23
mΩ
—40 °C to 125 °C
25
mΩ
25 °C
500
—40 °C to 125 °C
kΩ
1000
25 °C
QOD Resistance
mΩ
—40 °C to 125 °C
25 °C
RPD,ON
25
—40 °C to 85 °C
—40 °C to 125 °C
VIN = 0.8V, IOUT=-200mA
mΩ
17
25 °C
VIN = 1.2V, IOUT=-200mA
mΩ
23
100
—40 °C to 125 °C
kΩ
Ω
150
Ω
190
°C
Protection
TSD
Thermal Shutdown
-
TSDHYS Thermal Shutdown Hysteresis
150
-
170
20
°C
6.6 Electrical Characteristics (VBIAS = 3.3 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
Power Consumption
25 °C
ISD,VBIA
S
VBIAS Shutdown Current
ON = 0V
—40 °C to 85 °C
—40 °C to 125 °C
0.1
uA
0.5
uA
1
uA
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6.6 Electrical Characteristics (VBIAS = 3.3 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
25 °C
IQ,VBIAS VBIAS Quiescent Current
ON > VIH
VIN Shutdown Current
ON = 0V
ION
ON pin leakage
ON = VBIAS
MAX
10
UNIT
uA
—40 °C to 85 °C
20
uA
—40 °C to 125 °C
20
uA
25 °C
ISD,VIN
TYP
0.1
—40 °C to 85 °C
—40 °C to 125 °C
uA
1
uA
2
uA
—40 °C to 125 °C
0.1
uA
25 °C
18
mΩ
Performance
VIN = 3.3V, , IOUT=-200mA —40 °C to 85 °C
—40 °C to 125 °C
25 °C
—40 °C to 125 °C
On-Resistance
25 °C
VIN = 1.2V, IOUT=-200mA
RQOD
Smart Pull Down Resistance
ON < VIL
mΩ
25
mΩ
mΩ
23
mΩ
—40 °C to 125 °C
25
mΩ
17
—40 °C to 85 °C
25 °C
mΩ
23
mΩ
25
mΩ
500
—40 °C to 125 °C
kΩ
1000
25 °C
QOD Resistance
mΩ
23
—40 °C to 85 °C
—40 °C to 125 °C
RPD,ON
mΩ
17
25 °C
VIN = 0.8V, IOUT=-200mA
mΩ
27
17
VIN = 1.8V, , IOUT=-200mA —40 °C to 85 °C
RON
24
100
—40 °C to 125 °C
kΩ
Ω
150
Ω
190
°C
Protection
TSD
Thermal Shutdown
-
TSDHYS Thermal Shutdown Hysteresis
150
-
170
20
°C
6.7 Electrical Characteristics (VBIAS = 1.5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX
UNIT
Power Consumption
25 °C
ISD,VBIA
S
VBIAS Shutdown Current
ON = 0V
0.1
–40 °C to 85 °C
–40 °C to 125 °C
25 °C
IQ,VBIAS VBIAS Quiescent Current
ON > VIH
–40 °C to 125 °C
ISD,VIN
ION
VIN Shutdown Current
ON pin leakage
ON = 0V
ON = VBIAS
0.5
uA
1
uA
10
–40 °C to 85 °C
25 °C
uA
uA
20
uA
20
uA
0.1
uA
–40 °C to 85 °C
1
uA
–40 °C to 125 °C
2
uA
–40 °C to 125 °C
0.1
uA
Performance
6
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6.7 Electrical Characteristics (VBIAS = 1.5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
25 °C
VIN = 1.5V, IOUT=-200mA
On-Resistance
VIN = 1.2V, IOUT=-200mA
33
mΩ
37
mΩ
20
–40 °C to 85 °C
25 °C
RPD,ON
Smart Pull Down Resistance
RQOD
QOD Resistance
mΩ
31
mΩ
34
mΩ
20
mΩ
–40 °C to 85 °C
31
mΩ
–40 °C to 125 °C
34
mΩ
25 °C
ON < VIL
mΩ
–40 °C to 125 °C
–40 °C to 125 °C
VIN = 0.8V, IOUT=-200mA
UNIT
–40 °C to 85 °C
25 °C
RON
MAX
20
500
–40 °C to 125 °C
kΩ
1000
25 °C
110
–40 °C to 125 °C
kΩ
Ω
150
Ω
190
°C
Protection
TSD
Thermal Shutdown
Rising
-
Hysteresis
-
150
170
20
°C
6.8 Switching Characteristics (VBIAS = 5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 5V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
2810
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
2020
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
791
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1110
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
62.7
us
VIN = 3.3V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
1580
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
1350
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
561
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1100
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
63
us
VIN = 1.8V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
1110
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
754
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
523
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1100
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
63
us
VIN = 1.2V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
928
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
516
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
508
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1100
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
63
us
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6.8 Switching Characteristics (VBIAS = 5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 0.8V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
796
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
360
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
499
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1100
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
63
us
6.9 Switching Characteristics (VBIAS = 3.3 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 3.3V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
2110
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
1370
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
741
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1110
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
61.8
us
VIN = 1.8V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
1170
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
625
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
543
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1100
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
63
us
VIN = 1.2V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
971
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
443
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
528
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1100
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
63
us
VIN = 0.8V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
832
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
315
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
516
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1100
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
63
us
6.10 Switching Characteristics (VBIAS = 1.5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 1.5V
8
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
1350
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
653
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
693
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1190
us
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6.10 Switching Characteristics (VBIAS = 1.5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
tOFF
Turn OFF time
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RL = 100Ω, CL = 10uF, CT = 1000pF
63.6
us
VIN = 1.2V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
1020
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
457
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
567
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1100
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
60
us
VIN = 0.8V
tON
Turn ON time
RL = 100Ω, CL = 10uF, CT = 1000pF
885
us
tRISE
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
331
us
tD
Delay time
RL = 100Ω, CL = 10uF, CT = 1000pF
553
us
tFALL
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
1100
us
tOFF
Turn OFF time
RL = 100Ω, CL = 10uF, CT = 1000pF
60
us
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6.11 Typical Characteristics
28
24
–40 C
25 C
85 C
125 C
114
112
QOD Resistance ()
26
On-Resistance (m)
116
—40 C
25 C
85 C
125 C
22
20
18
110
108
106
104
102
16
100
14
1.5
2
2.5
3
3.5
4
Bias Voltage (V)
4.5
5
98
1.5
5.5
12.5
5
5.5
—40 C
25 C
125 C
0.09
0.08
Shutdown Current (uA)
11.5
Quiescent Current (uA)
4.5
0.1
–40 C
25 C
85 C
125 C
12
11
10.5
10
9.5
9
8.5
0.07
0.06
0.05
0.04
0.03
0.02
8
0.01
7.5
1.5
2
2.5
3
3.5
4
Bias Voltage (V)
4.5
5
0
1.5
5.5
VIN = VBIAS
Delay Time (us)
1.5
2.5
3
3.5
4
Bias Voltage (V)
4.5
5
5.5
Figure 6-4. VBIAS Shutdown Current vs Bias Voltage
–40 C
25 C
85 C
125 C
1
2
VIN = VBIAS
Figure 6-3. Quiescent Current vs Bias Voltage
Rise Time (us)
3
3.5
4
Bias Voltage (V)
Figure 6-2. QOD Resistance vs Bias Voltage
Figure 6-1. On-Resistance vs Bias Voltage
2
2.5
3
3.5
Input Voltage (V)
VBIAS = 5 V
4
CT = Open
4.5
5
CL = 10 µF
Figure 6-5. Rise Time vs Input Voltage
10
2.5
VIN = VBIAS
VIN = VBIAS
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
0.5
2
110
108
106
104
102
100
98
96
94
92
90
88
86
84
82
80
0.5
–40 C
25 C
85 C
125 C
1
1.5
VBIAS = 5 V
2
2.5
3
3.5
Input Voltage (V)
4
CT = Open
4.5
5
CL = 10 µF
Figure 6-6. Delay Time vs Input Voltage
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6.11 Typical Characteristics (continued)
200
–40 C
25 C
85 C
125 C
190
170
Off Time (us)
Turn-On Time (us)
180
160
150
140
130
120
110
0.5
1
1.5
2
VBIAS = 5 V
2.5
3
3.5
Input Volage (V)
4
CT = Open
4.5
5
90
87
84
81
78
75
72
69
66
63
60
57
54
51
48
0.5
–40 C
25 C
125 C
1
CL = 10 µF
VBIAS = 5 V
Figure 6-7. Turn-On Time vs Input Voltage
1220
2.5
3
3.5
Input Voltage (V)
4
CT = Open
4.5
5
CL = 10 µF
Figure 6-8. Off Time vs Input Voltage
VIN = 5 V
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.8 V
9000
8000
7000
1180
Rise Time (us)
Fall Time (us)
2
10000
–40 C
25 C
125 C
1200
1.5
1160
1140
6000
5000
4000
3000
2000
1120
1100
0.5
1000
0
1
1.5
VBIAS = 5 V
2
2.5
3
3.5
Input Volage (V)
4
CT = Open
4.5
5
CL = 10 µF
Figure 6-9. Fall Time vs Input Voltage
0
500 1000 1500 2000 2500 3000 3500 4000 4500 5000
CT Capacitor (pF)
VBIAS = 5 V
CL = 10 µF
Figure 6-10. Rise Time vs CT Capacitor
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7 Parameter Measurement Information
VON
VIL
VIH
tON
tOFF
tRISE
VOUT
tFALL
90%
tDELAY
90%
10%
10%
Figure 7-1. TPS22995 Timing Parameters
12
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8 Detailed Description
8.1 Overview
The TPS22995 is a 5.5-V, 3.8-A load switch in a 6-pin WQFN package with 0.4-mm and 0.5-mm pin pitch
options. To reduce voltage drop for low voltage and high-current rails, the device implements a low-resistance,
18-mΩ, N-channel MOSFET, which reduces the dropout voltage through the device. The device has a
configurable slew rate, which helps reduce or eliminate power supply droop because of large inrush currents.
The slew rate can be configured by connecting a capacitor to ground to the CT pin. The TPS22995 also
integrates a Quick Output Discharge circuit that is activated when the switch is turned off, pulling the output
voltage down to a known 0-V state. TPS22995 increases circuit robustness by integrating thermal shutdown that
protects the device in high-temperature conditions.
8.2 Functional Block Diagram
VOUT
VIN
Charge
Pump
VBIAS
Thermal
Shutdown
ON
Control Logic
CT
Driver
RQOD
Smart
Pull
Down
GND
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8.3 Feature Description
8.3.1 Adjustable Slew Rate
A capacitor to GND on the CT pin sets the slew rate, and the higher the Capacitor the higher the slew rate. Rise
times are shown below.
Table 8-1. Rise Time vs CT vs VIN
CT Capacitor
VIN = 5.5 V
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.8 V
0 pF
96.2 µs
72.2 µs
47.8 µs
36.6 µs
28.2 us
220 pF
517 µs
350 µs
201 µs
140 µs
100 us
1000 pF
2020 µs
1350 µs
754 µs
516 µs
360 us
4700 pF
9230 µs
6190 µs
3470 µs
2380 µs
1660 us
The following equation can be used to estimate the rise time for different VIN and CT capacitors:
tR = (0.3418VIN + 0.1036) × CT + 14.064VIN + 12.255
(1)
where
•
•
•
tR = Rise time in µs.
VIN = Input voltage in V.
CT = CT Capacitor in pF.
8.3.2 Quick Output Discharge
TPS22995 integrates Quick Output Discharge. When the switch is disabled, a discharge resistor is connected
between VOUT and GND. This resistor has a typical value of 100 Ω and prevents the output from floating while
the switch is disabled
8.3.3 ON and OFF Control
The ON pin controls the state of the switch. The ON pin is compatible with standard GPIO logic threshold so it
can be used in a wide variety of applications. When power is first applied to VIN, a Smart Pulldown is used to
keep the ON pin from floating until the system sequencing is complete. After the ON pin is deliberately driven
high (≥ VIH), the Smart Pulldown is disconnected to prevent unnecessary power loss. See the below table when
the ON Pin Smart Pulldown is active.
Table 8-2. On Pin Control
ON Pin Voltage
ON Pin Function
≤ VIL
Pulldown active
≥ VIH
No pulldown
8.3.4 Thermal Shutdown
When the device temperature reaches 170°C (typical), the device shuts itself off to prevent thermal damage.
After the device cools off by about 20°C, it turns back on. If the device is kept in a thermally stressful
environment, then the device oscillates between these two states until it can keep its temperature below the
thermal shutdown point.
14
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8.4 Device Functional Modes
Table 8-3. Device Functional Modes
ON
Fault Condition
VOUT State
L
N/A
Hi-Z
H
None
VIN through RON
X
Thermal shutdown
Hi-Z
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The input to output voltage drop in the device is determined by the RON of the device and the load current. The
RON of the device depends upon the VIN and VBIAS condition of the device. See the RON specification in the
Section 6.5 table of this data sheet. After the RON of the device is determined based upon the VIN and VBIAS
conditions, use the below equation to calculate the input to output voltage drop.
'V
ILOAD u RON
(2)
where
•
•
•
•
ΔV is the voltage drop from VIN to VOUT.
ILOAD is the load current.
RON is the on-resistance of the device for a specific VIN and VBIAS.
An appropriate ILOAD must be chosen such that the IMAX specification of the device is not violated.
9.2 Typical Application
This typical application demonstrates how the TPS22995 device can be used to limit start-up inrush current.
TPS22995
VIN
Power Supply
VOUT
Load
Cin
VBIAS
CT
CT
ON
ON
OFF
GND
Figure 9-1. TPS22995 Application Schematic
9.2.1 Design Requirements
Table 9-1. Design Parameters
16
DESIGN PARAMETER
EXAMPLE VALUE
VBIAS
5.5 V
VIN
5.5 V
CL
47 μF
RL
None
Maximum acceptable inrush current
200 mA
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9.2.2 Detailed Design Procedure
When the switch is enabled, the output capacitors must be charged up from 0 V to VIN. This charge arrives in the
form of inrush current. Use the equation below to calculate inrush current.
IINRUSH = CL × dVOUT/dt
(3)
where
•
•
•
CL is the output capacitance.
dVOUT is the change in VOUT during the ramp-up of the output voltage when device is enabled.
dt is the rise time in VOUT during the ramp-up of the output voltage when the device is enabled.
The TPS22995 offers an adjustable rise time for VOUT, allowing the user to control the inrush current during
turn-on. The appropriate rise time can be calculated using the design requirements and the inrush current
equation as shown below.
200 mA = 47uF × 5.5 V/dt
(4)
where
dt = 1292 us
(5)
The TPS22995 has very fast rise times with CT pin open. The typical rise time is 127 μs at VBIAS = 5.5 V, VIN =
5.5 V, RL = 100 Ω, and CL = 0.1 µF. This rise time results in an inrush current of 1.59 A. According to Table 8-1,
using RT = 10 kΩ results in a rise time of 1520 us, which limits the inrush current to 176 mA. Alternatively, can be
used to determine the capacitor needed.
9.2.3 Application Performance Plots
The below oscilloscope captures show the difference between the inrush current for CT = 0 pF and CT = 1000 pF settings.
The CT = 1000 pF setting is able to keep the inrush current under the required 200 mA, while the CT = 0 pF setting is too fast
for this design
Figure 9-2. Inrush Current for CL = 47 µF with CT = 0 pF
Figure 9-3. Inrush Current for CL = 47 µF with CT = 1000 pF
9.3 Power Supply Recommendations
The TPS22995 device is designed to operate with a VIN range of 0.4 V to 5.5 V. The VIN power supply must
be well regulated and placed as close to the device terminal as possible. The power supply must be able to
withstand all transient load current steps. In most situations, using an input capacitance (CIN) of 1 μF is sufficient
to prevent the supply voltage from dipping when the switch is turned on. In cases where the power supply is slow
to respond to a large transient current or large load current step, additional bulk capacitance can be required on
the input.
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9.4 Layout
9.4.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances can have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
9.4.2 Layout Example
VBIAS
Via to GND
VBIAS
CT
VIN
VOUT
ON
GND
From GPIO
Via to GND
Figure 9-4. Layout Example (RZF, RZG)
18
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10 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
10.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
10.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
10.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
10.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
10.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
21-Dec-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
TPS22995RZFR
ACTIVE
WQFN-HR
RZF
6
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
7
Samples
TPS22995RZGR
ACTIVE
WQFN-HR
RZG
6
3000
RoHS & Green
SN
Level-1-260C-UNLIM
-40 to 125
6
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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