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TPS2376-H
SLVS646B – SEPTEMBER 2006 – REVISED NOVEMBER 2018
TPS2376-H IEEE802.3af, 600-mA Capable, PD Controller
1 Features
3 Description
•
•
•
•
•
•
The 8-pin integrated circuit contains all of the features
needed to develop a high power IEEE 802.3af style
powered device (PD). The TPS2376-H offers a higher
current limit and increased thermal dissipation
capability over the TPS237X family of devices. The
TPS2376-H implements a fully compliant PoE
interface
while
permitting
non-standard
implementations that draw more power. A 26 W PD
may be constructed when working from a 52-V
minimum PSE over 100 m of CAT-5 cable. The
TPS2376-H features a 100-V rating, 600-mA
capability, adjustable inrush limiting, fault protection
with auto-retry, and true open-drain power-good
functionality.
1
Adjustable Turn-on Thresholds
Permits High-power 26 W Designs
Integrated 0.58-Ω, 100-V, Low-Side Switch
15-kV System Level ESD Capable
Industrial Temperature Range: –40°C to 85°C
8-Pin PowerPad™ SOIC Package
2 Applications
•
•
•
•
VoIP Video and Speaker Phones
WiMAX Access Points
Security Cameras
RFID Readers
Device Information (1)
PART NUMBER
TPS2376-H
(1)
PACKAGE
SOIC (8)
BODY SIZE (NOM)
4.89 mm × 3.90 mm
For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application Circuit
1
2
3
6
T1A
Data to
Ethernet
PHY
T1B
23.2 .Ÿ
RJ-45
UVLO
SMAJ58A
0.1 µF
ILIM
4
5
7
TPS2376-H
PG
CBULK
To DC/DC Converter
VDD
DET
CLASS
PAD
287 .Ÿ
1.62 .Ÿ
VSS
RTN
8
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS2376-H
SLVS646B – SEPTEMBER 2006 – REVISED NOVEMBER 2018
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
4
4
4
4
5
5
7
Absolute Maximum Ratings .....................................
ESD Ratings ............................................................
ESD Ratings IEC .....................................................
Recommended Operating Conditions.......................
Thermal Information .................................................
Electrical Characteristics..........................................
Typical Characteristics ..............................................
Detailed Description .............................................. 9
8.1 Overview ................................................................... 9
8.2 Functional Block Diagram ....................................... 10
8.3 Feature Description................................................. 10
9
Application and Implementation ........................ 12
9.1 Application Information............................................ 12
9.2 Typical Application .................................................. 14
10 Power Supply Recommendations ..................... 15
10.1 Maintain Power Signature..................................... 15
10.2 DC/DC Converter Startup ..................................... 15
10.3 Auxiliary Power Source ORing.............................. 16
11 Layout................................................................... 17
11.1
11.2
11.3
11.4
Layout Guidelines .................................................
Layout Example ....................................................
Thermal Protection................................................
ESD.......................................................................
17
18
18
18
12 Device and Documentation Support ................. 19
12.1
12.2
12.3
12.4
12.5
12.6
Documentation Support .......................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
19
19
19
19
19
19
13 Mechanical, Packaging, and Orderable
Information ........................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (September 2006) to Revision B
Page
•
Changed title from IEEE 802.3af PoE High Power PD Controller to IEEE 802.3af, 600-mA Capable, PD Controller ......... 1
•
Added Device Information table, ESD Ratings table, Thermal Information table, Feature Description section,
Application and Implementation section, Power Supply Recommendations section, Device and Documentation
Support section, Mechanical, Packaging, and Orderable Information section ...................................................................... 1
•
Deleted the Product Selector table see the Device Comparison table ................................................................................. 3
•
Deleted Dissipation Rating Table see Thermal Information table ......................................................................................... 5
•
Deleted Available Options table see Packaging Information at the end of the data sheet .................................................. 19
2
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SLVS646B – SEPTEMBER 2006 – REVISED NOVEMBER 2018
5 Device Comparison Table
(1)
Device
UVLO
Protection
Package (1)
Rated
Current
TPS2376-H
Adjustable
Auto-Retry
DDA
600 mA
TPS2375-1
802.3af
Auto-Retry
PW
400 mA
TPS2377-1
Legacy
Auto-Retry
D
400 mA
TPS2375
802.3af
Latch
PW, D
400 mA
TPS2376
Adjustable
Latch
PW, D
400 mA
TPS2377
Legacy
Latch
PW, D
400 mA
Packages codes as follows: D = S0, DDA = SO PowerPad, PW = TSSOP
6 Pin Configuration and Functions
DDA PACKAGE
8-Pin SOIC
Top View
1
2
3
4
8
ILIM
CLASS
VDD
UVLO
DET
PG
VSS
RTN
7
6
5
Pin Functions
PIN
NO.
'76-H
I/O
CLASS
2
O
Connect a resistor from CLASS to VSS to set the classification of the powered device
(PD). The IEEE classification levels and corresponding resistor values are shown in
Table 1.
DET
3
O
Connect a 24.9-kΩ detection resistor from DET to VDD.
ILIM
1
O
Connect a resistor from ILIM to VSS to set the start-up inrush current limit. The equation
for calculating the resistor is shown in the detailed pin description section for ILIM.
PG
6
O
Open-drain, power-good output, active high, referenced to RTN.
RTN
5
O
Switched output side return line used as the low-side reference for the TPS2376-H load.
UVLO
7
I
UVLO comparator input that controls pass-device turn-on and off. Connect UVLO to a
resistor divider from VDD to VSS.
VDD
8
I
Positive line from the rectified PSE provided input.
VSS
4
I
Return line on the source side of the TPS2376-H from the PSE.
PowerPad™
—
I
The PowerPad must be connected to VSS. The VSS copper on the circuit board must be
a large fill area to assist in heat dissipation.
NAME
DESCRIPTION
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7 Specifications
7.1
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
Voltage
(1)
, voltages are referenced to V(VSS)
MIN
MAX
VDD, RTN (2), DET, PG
–0.3
100
ILIM, UVLO
–0.3
10
CLASS
–0.3
12
RTN (3)
Current, sinking
Current, sourcing
TJ
PG
0
DET
0
1
CLASS
0
50
0
1
ILIM
5
(2)
(3)
mA
Internally Limited
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
(1)
V
Internally Limited
Maximum junction temperature range
Tstg
UNIT
260
Storage temperature
–65
°C
150
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
I(RTN) = 0
SOA limited to V(RTN) = 80 V and I(RTN) = 900 mA.
7.2 ESD Ratings
V(ESD)
(1)
VALUE
UNIT
±2
kV
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
Electrostatic discharge
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
7.3 ESD Ratings IEC
VALUE
V(ESD)
Electrostatic discharge
IEC 61000-4-2 contact discharge at RJ-45(1)
±8
IEC 61000-4-2 air-gap discharge at RJ-45(1)
±15
UNIT
kV
(1) Surges applied to RJ-45 of the Typical Application Circuit between pins of RJ-45, and between pins and output voltage rails per
EN61000-4-2, 1999.
7.4 Recommended Operating Conditions
R(ILIM)
MIN
MAX
Input voltage range
VDD, PG, RTN
0
57
V
Operating current range (sinking)
RTN
0
600
mA
Classification resistor (1)
CLASS
255
4420
Ω
125
1000
kΩ
mA
Inrush limit program resistor
(1)
Sinking current
TJ
Operating junction temperature
TA
Operating free–air temperature
(1)
(2)
4
PG
IRTN ≤ 400 mA
400 mA < IRTN ≤ 600 mA (2)
0
2
-40
125
-40
105
-40
85
UNIT
°C
°C
Voltage should not be externally applied to CLASS and ILIM.
Temperature limitation is for 10 year life-expectancy at this temperature. Short-term operation to 125 °C is permissable.
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7.5 Thermal Information
TPS2376-H
THERMAL METRIC(1)
DDA (SOIC)
UNIT
8 PINS
Modified High-K(2)
RθJA
58.6
(2)
Junction-to-ambient thermal resistance
Modified Low-K
50
Best(2)
45
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2) Tested per JEDEC JESD51, natural convection. The definitions of high-k and low-k are per JESD 51-7 and JESD 51-3. Modified low-k
(2 signal - no plane, 3 in. by 3 in. board, 0.062 in. thick, 1 oz. copper) test board with the pad soldered, and an additional 0.12 in.2 of
top-side copper added to the pad. Modified high-k is a (2 signal – 2 plane) test board with the pad soldered. The best case thermal
resistance is obtained using the recommendations per SLMA002 (2 signal - 2 plane with the pad connected to the plane).
7.6
Electrical Characteristics
V(VDD) = 48 V, R(DET) = 24.9 kΩ, R(CLASS) = 255 Ω, R(ILIM) = 287 kΩ, and –40°C ≤ TJ ≤ 125°C, unless otherwise noted. Positive
currents are into pins. Typical values are at 25°C. All voltages are with respect to VSS unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
0.3
3
μA
4
12
μA
DETECTION
Offset current
DET open, V(VDD) = V(RTN) = 1.9 V, measure
I(VDD) + I(RTN)
Sleep current
DET open, V(VDD) = V(RTN) = 10.1 V, measure
I(VDD) + I(RTN)
DET leakage current
V(DET) = V(VDD) = 57 V, measure I(DET)
Detection current
V(RTN) = V(VDD),
R(DET) = 24.9 kΩ,
measure I(VDD) + I(RTN) +
I(DET)
0.1
5
μA
V(VDD) = 1.4 V
53.7
56
58.3
μA
V(VDD) = 10.1 V
395
410
417
μA
CLASSIFICATION
Measure I(VDD) + I(RTN), 13 V ≤ V(VDD) ≤ 21 V,
V(VDD) = V(RTN)
I(CLASS)
V(CL_ON)
V(CU_OFF)
V(CU_H)
Ilkg
Classification current
(1)
Classification lower threshold
Classification upper threshold
Leakage current
R(CLASS) = 4420 Ω
2.2
2.4
2.8
R(CLASS) = 953 Ω
10.3
10.6
11.3
R(CLASS) = 549 Ω
17.7
18.3
19.5
R(CLASS) = 357 Ω
27.1
28
29.5
R(CLASS) = 255 Ω
38
39.4
41.2
10.2
11.3
13
1.6
1.8
1.95
Regulator turns off, V(VDD) rising
21
21.9
23
Hysteresis
0.5
0.78
1
V
1
μA
Regulator turns on, V(VDD) rising
Hysteresis
V(CLASS) = 0 V, V(VDD) = 57 V
mA
V
V
PASS DEVICE
rDS(on)
I(LIM)
On resistance
V(VDD) = V(RTN) = 30 V
Current limit
V(RTN) = 1 V
625
Inrush limit
V(RTN) = 2 V, R(ILIM) = 178 kΩ
160
85
Inrush current termination
(2)
Leakage current, ILIM
(1)
(2)
1
Ω
15
μA
765
900
mA
224
296
mA
91
100
%
1
μA
0.58
Leakage current
V(RTN) falling, R(ILIM) = 287 kΩ, inrush
state→normal operation
V(VDD) = 15 V, V(UVLO) = 0 V
Classification is tested with exact resistor values. A 1% tolerance classification resistor ensures compliance with IEEE 802.3af limits.
This parameter specifies the RTN current value, as a percentage of the steady state inrush current, below which it must fall to make PG
assert (open-drain).
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Electrical Characteristics (continued)
V(VDD) = 48 V, R(DET) = 24.9 kΩ, R(CLASS) = 255 Ω, R(ILIM) = 287 kΩ, and –40°C ≤ TJ ≤ 125°C, unless otherwise noted. Positive
currents are into pins. Typical values are at 25°C. All voltages are with respect to VSS unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
PG
Voltage threshold rising
(3)
V(RTN) rising
9.5
10
10.5
V
PG deglitch
Delay rising and falling PG
75
150
225
μs
Output low voltage
I(PG) = 2 mA, V(RTN) = 34 V,
V(VDD) = 38 V, V(RTN) falling
0.12
0.4
V
I(PG) = 2 mA, V(RTN) = 0 V, V(VDD) = 25 V
0.12
0.4
V
0.1
1
μA
Leakage current
V(PG) = 57 V, V(RTN) = 0 V
UVLO
V(UVLO_R)
V(UVLO_F)
Voltage at UVLO - TPS2376-H
V(UVLO) rising
2.43
2.49
2.57
V(UVLO) falling
1.87
1.93
1.98
Hysteresis
0.53
0.56
0.58
Temperature rising
135
V
THERMAL SHUTDOWN
Shutdown temperature
Hysteresis
°C
20
°C
BIAS CURRENT
Operating current
(3)
6
I(VDD)
240
450
μA
Start with V(RTN) = 0 V, then increase V(RTN) until PG switches. Measure before thermal shutdown occurs.
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7.7 Typical Characteristics
Graphs over temperature are interpolations between the marked data points.
6
Resistance - kΩ
5
o
Current − mA
TJ = 125 C
4
3
o
TJ = 25 C
2
1
o
TJ = -40 C
0
0
1
2
3
4 5 6 7
V(VDD) − V
8
9
10 11
V(PI) - V
Figure 2. PD Detection Resistance vs V(PI)
11.3
Classification Turnoff Voltage − V
Classification Turnon Voltage − V
Figure 1. I(VDD) + I(RTN)
11.2
11.1
11.0
−40 −20
0
20
40
60
80
100 120
21.94
21.93
21.92
21.91
21.90
−40 −20
0
20
40
60
80
100
120
o
TJ − Junction Temperature − C
o
TJ − Junction Temperature − C
Figure 3. Classification Turn On Voltage vs Temperature
Figure 4. Classification Turn Off Voltage vs Temperature
0.350
0.9
o
Pass Device Resistance − W
TJ = 125 C
0.300
I (VDD) − mA
o
TJ = 25 C
0.250
o
TJ = -40 C
0.200
0.150
0.100
22
27
32
37
42
47
52
0.8
0.7
0.6
0.5
0.4
−40 −20 0
20
80 100
40
60
o
TJ − Junction Temperature − C
57
VDD − V
Figure 5. I(VDD) vs VDD
Figure 6. Pass Device Resistance vs Temperature
2.489
1.929
1.928
V(UVLO) − V
V(UVLO) − V
2.488
2.487
2.486
2.485
2.484
−40 −20
120
1.927
1.926
1.925
1.924
0
20
40
60
80
100 120
1.923
−40
TJ − Junction Temperature − °C
−20
0
20
40
60
80
100 120
TJ − Junction Temperature − °C
Figure 7. UVLO Rising vs Temperature
Figure 8. UVLO Falling vs Temperature
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Typical Characteristics (continued)
250
780
225
778
776
774
I(RTN) − CURRENT LIMIT − mA
I(RTN) − INRUSH CURRENT LIMIT − mA
Graphs over temperature are interpolations between the marked data points.
RI(LIM) = 178 kW
200
175
RI(LIM) = 278 kW
150
125
100
−40 −20
772
770
768
766
764
762
760
−40 −20
0
20
40
60
80 100 120
0
20
40
60
80
100 120
TJ − Junction Temperature − °C
TJ − Junction Temperature − °C
Figure 9. Inrush Current vs Temperature
8
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Figure 10. Current Limit vs Temperature
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8 Detailed Description
8.1 Overview
The following descriptions refer to the schematic of Typical Application Circuit and the Functional Block Diagram.
ILIM : A resistor from this pin to VSS sets the inrush current limit per Equation 1:
I(LIM) = 40000
R(ILIM)
(1)
where ILIM is the desired inrush current value, in Amperes, and R(ILIM) is the value of the programming resistor
from ILIM to VSS, in ohms. The practical limits on R(ILIM) are 125 kΩ to 1 MΩ. A value of 287 kΩ is
recommended for compatibility with legacy power sourcing equipment (PSE).
Inrush current limiting prevents current drawn by the bulk capacitor from causing the line voltage to sag below
the lower UVLO threshold. Adjustable inrush current limiting allows the use of arbitrarily large capacitors and also
accommodates legacy systems that require low inrush currents.
The ILIM pin must not be left open or shorted to VSS.
CLASS: Classification is implemented by means of an external resistor, R(CLASS), connected between CLASS
and VSS. The controller draws current from the input line through R(CLASS) when the input voltage lies between
13 V and 21 V. The classification currents specified in the electrical characteristics table include the bias current
flowing into VDD and any RTN leakage current.
A high power system will not meet the standard power CLASS ranges defined in IEEE 802.3af, which are shown
for reference in Table 1. An end-to-end high power system may either redefine the CLASS power, or dispense
with CLASS entirely.
The CLASS pin must not be shorted to ground.
Table 1. Classification - IEEE 802.3af Values
CLASS
PD POWER (W)
R(CLASS) (Ω)
802.3af LIMITS (mA)
0
0.44 – 12.95
4420 ±1%
0-4
1
0.44 – 3.84
953 ±1%
9 - 12
2
3.84 – 6.49
549 ±1%
17 - 20
3
6.49 – 12.95
357 ±1%
26 - 30
4
-
255 ±1%
36 - 44
NOTE
Default class
Reserved for future use
DET: R(DET) should be connected between VDD and the DET pin when it is used. R(DET) is connected across the
input line when V(VDD) lies between 1.4 V and 11.3 V, and is disconnected when the line voltage exceeds this
range to conserve power.
The parallel combination of R(DET) and the UVLO program resistors must equal 24.9 kΩ, ±1%. Minimizing R(DET),
and maximizing the UVLO program resistors, improves efficiency during normal operation. Conversely, R(DET)
may be eliminated with the UVLO divider providing the 24.9 kΩ signature to reduce component count.
VSS: This is the input supply negative rail that serves as a local ground. The PowerPad must be connected to
this pin.
RTN: This pin provides the switched negative power rail used by the downstream circuits. The operational and
inrush current limit control current into the pin. The PG circuit monitors the RTN voltage and also uses it as the
return for the PG pin pulldown transistor. The internal MOSFET body diode clamps VSS to RTN when voltage is
present between VDD and RTN and the Power-over-Ethernet (PoE) input is not present.
PG: This pin goes to a high resistance state when the internal MOSFET that feeds the RTN pin is enabled, and
the device is not in inrush current limiting. In all other states except detection, the PG output is pulled to RTN by
the internal open-drain transistor. Performance is ensured with at least 4 V between VDD and RTN.
PG is an open-drain output, which may require a pullup resistor or other interface to the dc/dc converter. PG may
be left open if not used.
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UVLO: The UVLO pin is used with an external resistor divider between VDD and VSS to set the upper and lower
UVLO thresholds. The TPS2376-H enables the output when V(UVLO) exceeds the upper UVLO threshold, and
turns it off when the input falls below the lower threshold.
The UVLO divider resistance may be used alone to provide the 24.9 kΩ detection signature, or be used in
conjunction with R(DET). Eliminating R(DET) reduces the component count at the cost of lower operating efficiency.
The Typical Application Circuit demonstrates the elimination of R(DET).
VDD: This is the positive input supply that is also common to downstream load circuits. This pin provides
operating power and allows the controller to monitor the line voltage to determine the mode of operation.
8.2 Functional Block Diagram
DET
Detection
Comparator
VDD
8
11.3 V
And 9.5 V
3
+
±
Classification
Comparator
21.9 V
And 21.1 V
CLASS
2
10-V
Regulator
PG
6
+
PG Comparator
±
1.5 V
And 10 V
Delay
150 µS
+
±
S
Thermal Shutdown
Q
1 = Inrush
R
UVLO
7
RTN
5
UVLO
Comp.
2.49 V
And 11.93 V
+
±
Current
Mirror
2.5 V
UVLO
1
1
36 mV
+
EN
1:1
+
±
0
800 PŸ
VSS
4
±
Current
Limit Amp.
50 m
8.3 Feature Description
8.3.1 Undervoltage Lockout (UVLO)
The TPS2376-H incorporates an undervoltage lockout (UVLO) circuit that monitors line voltage to determine
when to apply power to the downstream load and allow the PD to power up. The IEEE 802.3af specification
dictates a maximum PD turn on voltage of 42 V and a minimum turn-off voltage of 30 V shown in Figure 12. The
UVLO pin provides the flexibility to adjust the turn on and turn off to the IEEE 802.3af limits, or a custom set.
Design the turn-on for 39.5 V if a design which uses the IEEE 802.3af limits is desired.
10
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Feature Description (continued)
8.3.2 Programmable Inrush Current Limit and Fixed Operational Current Limit
Inrush limiting has several benefits. First, it maintains the cable voltage above the UVLO turn-off threshold as the
bulk capacitor charges. Second, it keeps the PSE from going into current limit. This reduces stress on the PSE
and allows an arbitrarily large bulk capacitor to be charged. Third, the inrush limit is used as the foldback current
during a hard overload.
The TPS2376-H operational current limit protects the internal power switch from sudden output faults and current
surges. The minimum operational current limit level of 625 mA lies above the minimum TPS23841 output current
limit of 600 mA. This current limit enables the PD to draw the maximum available power.
The TPS2376-H incorporates a state machine that controls the inrush and operational current limit states. When
V(VDD) is below the lower UVLO threshold, the current limit state machine is reset. In this condition, the RTN pin
is high impedance, and floats to V(VDD) once the output capacitor is discharged. When V(VDD) rises above the
UVLO turn on threshold, the TPS2376-H enables the internal power MOSFET with the current limit set to the
inrush value programmed by R(ILIM). The load capacitor charges and the RTN pin voltage falls from V(VDD) to
nearly V(VSS). Once the inrush current falls about 10% below the programmed limit for 150-μs, the current limit
switches to the 765-mA operational level and PG goes open-drain. The internal power MOSFET is disabled if the
input voltage drops below the lower UVLO threshold and the state machine is reset.
An output overload, or increasing input voltage step, may cause the operational current limit to become active.
The MOSFET voltage will then start to rise, causing high power dissipation. Current-limit foldback controls this
MOSFET power dissipation to a manageable level. Foldback is achieved by switching the current limit state
machine from the operational level to inrush when the MOSFET voltage exceeds 10 V for 150-μs. An additional
layer of protection is provided by thermal shutdown if the overload persists long enough.
Practical values of R(ILIM) lie between 125 kΩ and 1 MΩ; however, selecting lower inrush current values reduces
peak stresses under output-short circuit conditions. An inrush level of 140 mA, set by an R(ILIM) of 287 kΩ, is
recommended for most applications.
8.3.3 Power Good
The TPS2376-H includes a power-good (PG) output for use as a dc/dc converter enable once the load capacitor
is fully charged. The PG pin is the safest way to ensure that there are no undesired interactions between the
inrush limit, the converter startup characteristic, and the size of the bulk capacitor.
The PG output is pulled to RTN whenever the MOSFET is disabled, is in inrush current limiting, or the V(RTN)
rises above 10 V. The PG pin goes to an open-drain state approximately 150 μs after the inrush current falls 10%
below the regulated value. PG pull down current is only specified for V(VDD-RTN) greater than 4 V, below which the
dc/dc converter should not be able to operate. The PG interface to the downstream dc/dc converter is simplified
by referencing it to RTN.
The PG pin can be left open if it is not used.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The IEEE 802.3af specification defines a process for safely providing power over an ethernet cable when a
capable device is connected, and then removing power if it is disconnected. The process proceeds through three
operational states: detection, classification, and operation. An unterminated cable is not powered. The PSE
periodically probes the cable with low voltage, looking for a 25 kΩ signature; this is referred to as detection. The
low power levels used during detection are unlikely to cause damage to devices not designed for PoE. If a valid
powered device (PD) signature is present during detection, then the PSE may optionally inquire about the
amount of power the PD requires; this is referred to as classification. The PD may return a default full-power
signature, or one of four other defined choices. In a high-power system, class may not be required, or the levels
may be redefined to suit that particular system. The PSE may use the class power to determine if it has
adequate power to operate this device, and later to determine if a device is using more power than it requested.
At this point in the process, the PSE may choose to power the PD. The PSE output is protected against shorts
and overloads when the PD is powered. The maintain power signature (MPS) is presented by the powered PD to
assure the PSE that it is present. The MPS is either a minimum dc current, a maximum ac impedance, or both.
When the MPS disappears, the PSE removes power and returns to its initial state. Figure 11 shows the
operational states as a function of PD input voltage range as defined in IEEE 802.3af.
The PD input is typically an RJ-45 (8-pin) connector, referred to as the power interface (PI). PD input
requirements differ from PSE output requirements to account for voltage drops in the cable. The IEEE 802.3af
specification uses a cable resistance of 20 Ω to derive the voltage limits at the PD from the PSE output
requirements. While the 20 Ω specification covers telecom type wiring, CAT-5 infrastructure will meet a 12.5 Ω
limit. Specifying the high-power system to operate over CAT-5 cable allows significantly more power to be
delivered.
A high-power nonstandard system need not support all combinations of voltage delivery polarities and pair sets.
The IEEE 802.3af PSE allows voltage of either polarity between the RX and TX pairs, or between the two spare
pairs. An input diode or bridge is recommended to provide reverse input polarity protection. The bridge maintains
compatibility with auto-MDIX systems that have reverse RX-TX pair assignments. The voltage drops associated
with the input diode(s) cause a difference between the limits at the PI and the TPS2376-H specifications.
Two-pair power delivery is the simplest to implement, and is preferred if adequate power can be achieved.
Application report SLVA225 presents a number of considerations for a high power PoE end-to-end system.
Power delivery on all four pairs is significantly more complex, and is only recommended when two pair systems
do not suffice. Considerations for high power systems are presented in Application Report SLVA225.
2.7
10.1
14.5
Shut-down
20.5
30
Maximum Input
Voltage
Must Turn On by ±
Voltage Rising
Lower Limit Proper Operation
Must Turn Off by Voltage Falling
Classify
Detect
0
Classification
Upper Limit
Classification
Lower Limit
Detection
Upper Limit
Detection
Lower Limit
The following discussion is intended as an aid in understanding the operation of the TPS2376-H, but not as a
substitute for the IEEE 802.3af standard. Standards change and should always be referenced when making
design decisions.
Normal Operation
36
42
57
Figure 11. IEEE 802.3 PD Voltage Limits
12
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Application Information (continued)
9.1.1 Internal Thresholds
In order to implement the defined PoE functions shown in Figure 11, the TPS2376-H has a number of internal
comparators with hysteresis for stable switching between the various states. Figure 12 relates the parameters in
the Electrical Characteristics section to the PoE states. The mode labeled idle between classification and PD
powered implies that the DET, CLASS, PG, and RTN pins are all high impedance.
Operational Mode
PD Powered
Idle
Classification
Detection
V(VDD)
V(CU_H)
1.4 V
V(CL_ON)
V(CL_OFF)
V(UVLO_F)
V(UVLO_R)
Figure 12. Threshold Voltages
9.1.2 Detection
The 25 kΩ PD signature is measured by applying two voltages between 2.7 V to 10.1 V, that are at least 1 V
apart, to the PD's PI and measuring the current. The resistance is calculated as a ΔV/ΔI, with an acceptable
range of 23.75 kΩ to 26.25 kΩ.
The TPS2376-H is in detection mode whenever the supply voltage is below the lower classification threshold.
The TPS2376-H draws a minimum of bias power in this condition, while PG and RTN are high impedance and
the circuits associated with ILIM and CLASS are disabled. The DET pin is pulled to VSS during detection.
Current flowing through R(DET) to VSS shown in Figure 13 produces the detection signature.
9.1.3 Classification
The classification process applies a voltage between 14.5 V and 20.5 V, for a maximum of 75 ms, to the input of
the PD, which in turn draws a fixed current set by R(CLASS). An 802.3af PSE measures the PD current to
determine which of the five available classes shown in Table 1 that the PD is signaling. The total current drawn
from the PSE during classification is the sum of bias currents and current through R(CLASS). The TPS2376-H
disconnects R(CLASS) at voltages above the classification range to avoid excessive power dissipation see
Figure 11 and Figure 12.
A high power end-to-end system may choose to not implement classification, or redefine the power associated
with each class. Low-voltage systems, for example 24 V, may not be able to use CLASS because the operational
voltage may lie within the classification voltage range. This would cause the TPS2376-H classification circuits to
dissipate power continuously.
The power rating of the class resistor should be chosen so that it is not overstressed for the required 75-ms
classification period, during which 10 V is applied. A higher wattage resistor might be required to withstand
testing over longer time periods.
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9.2 Typical Application
1
2
3
6
T1A
Data to
Ethernet
PHY
T1B
23.2 .Ÿ
RJ-45
UVLO
SMAJ58A
0.1 µF
ILIM
4
TPS2376-H
PG
CBULK
To DC/DC Converter
VDD
DET
CLASS
PAD
5
287 .Ÿ
7
1.62 .Ÿ
VSS
RTN
8
Figure 13. Typical Application Circuit
9.2.1 External Components
9.2.1.1 Detection Resistor and UVLO Divider
The UVLO divider shown in Figure 13 is suitable where elimination of the detection resistor is desirable and the
IEEE 802.3af compatible turn on is desired. The upper resistor dissipates about 116 mW at 55.5 V (57 V minus
1.5 V for an input diode bridge) at the maximum input, and supports 52 V. An 0805 size resistor is recommended
for this resistor while an 0603 size resistor is suitable for the lower resistor.
Improved efficiency is obtained by using a detection resistor along with high-value UVLO resistors. The
maximum UVLO divider resistance may be determined by considering the effect of the UVLO pin leakage
current. The error is equal to the leakage current times the parallel resistance of the divider resistors. This may
be simplified for the 39.5 V turn-on case to the leakage current times the lower divider resistance. The maximum
resistance is the error voltage divided by the leakage current. For a 0.5% error, the maximum resistance is
(0.005 * 2.49 V) / 1 μA, or approximately 12.4 kΩ. A possible divider for a turn-on voltage of 39.5 V is 178 kΩ /
12.1 kΩ resulting in a turn-on voltage of 39.1 V. A suitable value for RDET is 28.7 kΩ, yielding a detection
resistance of 24.93 kΩ. The operating power loss at 55.5 V is 16 mW.
The input diode bridge's incremental resistance can be hundreds of ohms at the low currents seen at 2.7 V on
the PI. The bridge resistance is in series with R(DET) and increases the total resistance seen by the PSE. This
varies with the type of diode selected by the designer, and it is not usually specified on the diode data sheet. The
value of R(DET) may be adjusted downwards to accommodate a particular diode type. The non-linear resistance
shown in Figure 2 at low currents is the result of the diodes.
9.2.1.2 Magnetics
A high-power PoE system places additional burden on power extraction from data pairs. Data transmission
properties must be maintained while carrying higher current and withstanding higher difference current between
the conductors in a pair. This difference current is the result of unbalanced resistances between the conductors
of a pair (see IEEE 802.3af annex 33E).
Either a higher current center-tapped transformer as shown in Figure 13, or the addition of a center-tapped
inductor, can be implemented. Proper termination is required around the transformer to provide correct
impedance matching and to avoid radiated and conducted emissions.
14
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Typical Application (continued)
9.2.1.3 Input Diodes or Diode Bridges
The IEEE 802.3af requires the PD to accept power on either set of input pairs in either polarity. This requirement
is satisfied by using two full-wave input bridge rectifiers as shown in Figure 13. The full configuration may not be
required when a custom high-power system is implemented. Silicon p-n diodes with a 1-A or 1.5-A rating and a
minimum breakdown of 100 V are recommended, however Schottky diodes will yield a somewhat lower power
loss. Diodes exhibit large dynamic resistance under low-current operating conditions such as in detection. The
diodes should be tested for their behavior under this condition. The total forward drops must be less than 1.5 V
at 500 μA and at the lowest operating temperature.
9.2.1.4 Input Capacitor
The IEEE 802.3af requires a PD input capacitance between 0.05 μF and 0.12 μF during detection. This capacitor
should be located directly adjacent to the TPS2376-H as shown in Figure 13. A 100-V, 10%, X7R ceramic
capacitor meets the specification over a wide temperature range.
9.2.1.5 Load Capacitor
The IEEE 802.3af specification requires that the PD maintain a minimum load capacitance of 5 μF.
A PD can fail the dc MPS requirement if the load current to capacitance ratio is too small. This is caused by
having a long input current dropout after a drop in input voltage. The PD should begin to draw input current
within 300 ms of an abrupt 13 V input droop.
A particular design may have a tendency to cause ringing at the RTN pin during startup, inadvertent hot-plugs of
the PoE input, or plugging in a wall adapter. It is recommended that a minimum value of 1 μF be used at the
output of the TPS2376-H if downstream filtering prevents placing the larger bulk capacitor right on the output.
When using ORing option 2, it is recommended that a large capacitor such as a 22 μF be placed across the
TPS2376-H output.
9.2.1.6 Transient Suppressor
Voltage transients on the TPS2376-H can be caused by connecting or disconnecting the PD, or by other
environmental conditions like ESD. A transient voltage suppressor, such as the SMAJ58A, should be installed
after the bridge and across the TPS2376-H input as shown in Figure 13.
Some form of protection may be required from V(VDD-RTN) if adequate capacitance is not present. RTN is a high
impedance node when the MOSFET is off. Some topologies may cause large transients to occur on this pin
when the PD is plugged into an active supply.
10 Power Supply Recommendations
10.1 Maintain Power Signature
Once a valid PD has been detected and powered, the PSE uses the maintain power signature (MPS) to
determine when to remove power from the PI. The PSE removes power from that output port if it detects loss of
MPS for 300 ms or more. A valid MPS requires that the PD to draw at least 10 mA and have an ac impedance
less than 26.25 kΩ in parallel with 0.05 μF.
10.2 DC/DC Converter Startup
The PSE and TPS2376-H are power and current limited sources, which imposes certain constraints on the PD
power supply design. Improper design of the system can prevent PD startup with some combinations of Ethernet
lines and PSE sources. The root of most startup problems revolves around the dc/dc converter.
Dc/dc converters have a constant input power characteristic that causes them to draw high currents at low
voltage. Also, a converter may draw in excess of 125% of its rated power during startup when the output voltage
approaches its regulated value, and the output capacitors are charging while the load draws its full power. These
characteristics lead to two undesired events. First, if the converter starts up during inrush, it can draw more
current than available from the TPS2376-H and cause the startup cycle to fail. Second, if the converter startup
current exceeds the TPS2376-H current limit, it may discharge the bulk capacitor until V(RTN-VSS) exceeds 10 V
and forces the TPS2376-H into inrush.
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DC/DC Converter Startup (continued)
The following guidelines should be used:
1. Set the TPS2376-H inrush to a moderate value such as 140 mA.
2. Hold the dc/dc converter off during inrush using PG.
3. Implement a softstart that keeps the peak start-up current below 600 mA, and preferably only a modest
amount over the operating current, at the minimum PSE voltage and maximum feed resistance.
4. If step 3 cannot be met, the bulk input capacitor should not discharge more than 8 V during start-up at the
minimum PSE voltage and maximum feed resistance. Start-up must be completed in less than 50 ms.
Step 4 requires a balance between the converter output capacitance, load, and input bulk capacitance. While
there are some cases which may not require all these measures, it is always a good practice to follow them.
Downstream converters that use PG control are turned off during a hard fault or thermal cycle, and will go
through an orderly restart once the bulk capacitor is recharged. Converters that do not use PG need to permit a
restart by either drawing less current than the inrush current limit provides, or by disabling long enough to allow
the bulk capacitor to recharge. A converter that has bootstrap startup can be designed to accomplish this goal.
10.3 Auxiliary Power Source ORing
Many PoE-capable devices are designed to operate from either a wall adapter or PoE power. A local power
solution adds cost and complexity, but allows a product to be used regardless of PoE availability. Attempting to
create solutions where the two power sources coexist in a specific controlled manner results in additional
complexity, and is not generally recommended. Figure 14 demonstrates three methods of diode ORing external
power into a PD. Option 1 inserts power on the output side of the PoE power conversion. Option 2 inserts power
on the TPS2376-H output. Option 3 applies power to the TPS2376-H input. Each of these options has
advantages and disadvantages. The wall adapter must meet a minimum 1500-Vac dielectric withstand test
voltage to the ac input power and to ground for options 2 and 3.
Inserting a Diode in This Location
With Option 2. Allows PoE To Start
With Aux Power Present.
~
+
~
±
VDD
R(DET)
RJ-45
0.1 …F
22 …F
DET
TPS237X
SMAJ58A
UCC3809
Or
UCC3813
ILIM
~
+
~
±
DC/DC
Converter
Main
DC/DC
Converter
Output
R(ILIM)
CLASS
RTN
R(CLASS)
Option 3
Auxiliary
Power
Input
Option 2
Use Only
One Option
Option 1
VSS
For Option 2.
The Capacitor Must Be
Right At The Output
To Control The
Transients.
Optional
Regulator
A Full Wave Bridge
Gives Flexibility To
Use Supply With Either
Polarity
See TI Document SLVR030 For A Typical
Application Circuit
Figure 14. Auxiliary Power ORing
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Auxiliary Power Source ORing (continued)
Option 1 consists of ORing power to the output of the PoE dc/dc converter. This option is preferred in cases
where PoE is added to an existing design that uses a low-voltage wall adapter. The relatively large PD
capacitance reduces the potential for harmful transients when the adapter is plugged in. The wall adapter output
may be grounded if the PD incorporates an isolated converter. This solution requires two separate regulators, but
low-voltage adapters are readily available. The PoE power can be given priority by setting its output voltage
above the adapter's.
Option 2 has the benefits that the adapter voltage may be lower than the TPS2376-H UVLO, and that the bulk
capacitor shown controls voltage transients caused by plugging an adapter in. The capacitor size and location
are chosen to control the amount of ringing that can occur on this node, which can be affected by additional
filtering components specific to a dc/dc converter design. The optional diode blocks the adapter voltage from
reverse biasing the input, and allows a PoE source to supply power provided that the PSE output voltage is
greater than the adapter voltage. The penalty of the diode is an additional power loss when running from PSE
power. The PSE may not be able to detect and start powering without the diode. This means that the adapter
may continue to power the PD until removed. Auxiliary voltage sources can be selected to be above or below the
PoE operational voltage range. If automatic PoE precedence is desired when using the low-voltage auxiliary
source option, make sure that the TPS2376-H inrush program limit is set higher than the maximum converter
input current at its lowest operating voltage. It is difficult to use PG with the low-voltage auxiliary source because
the converter must operate during a condition when the TPS2376-H would normally disable it. Circuits may be
designed to force operation from one source or the other depending on the desired operation and the auxiliary
source voltage chosen. However, they are not recommended because they increase complexity and thus cost.
Option 3 inserts the power before the TPS2376-H. The adapter output voltage must meet the TPS2376-H UVLO
turn-on requirement and limit the maximum voltage to 57 V. This option provides a valid power-good signal and
simplifies power priority issues. Option 3 is the most likely to create transient voltage problems when a powered
adapter is plugged in. This causes the cabling inductance and PD input capacitance to ring to a high voltage that
must be clamped by the TVS. If the adapter applies voltage to the PD before the PSE, it prevents the PSE from
detecting the PD. If the PSE is already powering the PD when the adapter is plugged in, priority is given to the
higher supply voltage.
11 Layout
11.1 Layout Guidelines
The layout of the PoE front end must use good practices for power and EMI/ESD. A basic set of
recommendations include:
1. The parts placement must be driven by the power flow in a point-to-point manner such as RJ-45 → Ethernet
interface → diode bridges → TVS and 0.1-μF capacitor → TPS2376-H → output capacitor.
2. There should not be any crossovers of signals from one part of the flow to another.
3. All leads should be as short as possible with wide power traces and paired signal and return.
4. Spacing consistent with safety standards like IEC60950 must be observed between the 48-V input voltage
rails and between the input and an isolated converter output.
5. The TPS2376-H should be over a local ground plane or fill area referenced to VSS.
6. Large SMT component pads should be used on power dissipating devices such as the diodes and the
TPS2376-H.
Use of generous copper area on VSS and to help the PCB spread and dissipate the heat is recommended.
Assuming a worst-case power dissipation of 0.4 W, the required thermal resistance may be calculated as: θJA = (
tJ_MAX - tA_MAX ) / P. A thermal resistance of 50°C/W is required for a junction temperature of 105°C at an ambient
of 85°C. The effect of additional local heating on the circuit board from other devices must be considered. The
thermal resistance cases provided in the dissipation rating table should be used as a guide in determining the
required area.
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Layout Guidelines (continued)
The Layout Example provides an example of a single sided layout with liberal copper plane areas to help spread
the heat. The active circuit area could be reduced by locating the small resistors on the backside of the board.
The TPS2376-H PowerPad is covered by copper fill, which has multiple vias to a backside mirror-image fill.
There are 5 small vias under the PowerPad per the guidelines of SLMA0002 which are masked by the graphics
of the tool. The fills for RTN and VDD also help spread the heat. A copper fill clearance of 0.030 inches was
used for VDD to RTN or VSS. A spacing of 0.025 inches for the full PoE voltage was met elsewhere.
11.2 Layout Example
UVLO
DIVIDER
TVS
VDD COPPER FILL
OUTPUT
CAPACITOR
R(ILM)
0.01 mF
R(CLASS)
R(DET)
VSS
COPPER FILL
TPS2376-H
RTN COPPER FILL
11.3 Thermal Protection
The TPS2376-H may overheat if the ambient temperature becomes excessive, or if it operates for an extended
period of time in classification or current limit. The TPS2376-H protects itself by disabling the RTN and CLASS
pins and pulling PG low when the internal die temperature reaches about 140°C. It automatically restarts when
the die temperature has fallen approximately 20°C. If V(RTN-VSS) is less than 10 V when the TPS2376-H restarts,
the current limit remains at 765 mA and PG goes open-drain. If the overload has caused V(RTN-VSS) to exceed 10
V while disabled, the current limit is set to the inrush level and PG remains low. This process is referred to as
thermal cycling. Thermal protection is active whenever the TPS2376-H is not in detection.
Short periods of thermal cycling do not significantly impact the reliability or life expectancy, but prolonged periods
may. Other components in the power path can be overstressed if this condition exists for a prolonged time as
well.
11.4 ESD
The TPS2376-H has been tested using the surge of EN61000-4-2 in evaluation circuit similar to the Typical
Application Circuit. The levels used were 8-kV contact discharge and 15-kV air discharge. Surges were applied
between the RJ-45 and the outputs, and between an auxiliary power input jack and the dc outputs. No failures
were observed.
ESD requirements for a unit that incorporates the TPS2376-H have much broader scope and operational
implications than those used in TI’s testing. Unit level requirements should not be confused with EVM testing that
only validated the TPS2376-H.
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
• High Power PoE PD Using the TPS2375/77-1
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.4 Trademarks
PowerPad, E2E are trademarks of Texas Instruments.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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13-Aug-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS2376DDA-H
ACTIVE SO PowerPAD
DDA
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
2376H
TPS2376DDA-HG4
ACTIVE SO PowerPAD
DDA
8
75
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
2376H
TPS2376DDAR-H
ACTIVE SO PowerPAD
DDA
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
2376H
TPS2376DDAR-HG4
ACTIVE SO PowerPAD
DDA
8
2500
RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 85
2376H
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
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RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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