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TPS54060-EP
SLVSCF8 – JULY 2014
TPS54060-EP 0.5-A, 60-V Step-Down DC/DC Converter With Eco-Mode™
1 Features
2 Applications
•
•
•
•
1
•
•
•
•
•
•
•
•
•
•
•
3.5- to 60-V Input Voltage Range
200-mΩ High-Side MOSFET
High Efficiency at Light Loads With a Pulse
Skipping Eco-Mode™
116-μA Operating Quiescent Current
1.3-μA Shutdown Current
100-kHz to 2.5-MHz Switching Frequency
Synchronizes to External Clock
Adjustable Slow Start/Sequencing
UV and OV Power Good Output
Adjustable UVLO Voltage and Hysteresis
0.8-V Internal Voltage Reference
MSOP10 Package With PowerPAD™
Supported by SwitcherPro™ Software Tool
(http://focus.ti.com/docs/toolsw/folders/print/switch
erpro.html)
Supports Defense, Aerospace, and Medical
Applications
– Controlled Baseline
– One Assembly and Test Site
– One Fabrication Site
– Available in Military (–55°C to 125°C)
Temperature Range
– Extended Product Life Cycle
– Extended Product-Change Notification
– Product Traceability
•
12-V, 24-V, and 48-V Industrial and Commercial
Low Power Systems
Aftermarket Auto Accessories: Video, GPS,
Entertainment
3 Description
The TPS54060 device is a 60-V, 0.5-A, step-down
regulator with an integrated high-side MOSFET.
Current mode control provides simple external
compensation and flexible component selection. A
low-ripple pulse skip mode reduces the no load,
regulated output supply current to 116 μA. Using the
enable pin, shutdown supply current is reduced to
1.3 μA when the enable pin is low.
Undervoltage lockout is internally set at 2.5 V, but
can be increased using the enable pin. The output
voltage startup ramp is controlled by the slow start
pin
that
can
also
be
configured
for
sequencing/tracking. An open-drain power good
signal indicates the output is within 93% to 107% of
its nominal voltage.
A wide switching frequency range allows efficiency
and external component size to be optimized.
Frequency fold back and thermal shutdown protects
the part during an overload condition.
The TPS54060 is available in a 10-pin thermallyenhanced MSOP10 PowerPAD package.
Device Information(1)
PACKAGE
BODY SIZE (NOM)
TPS54060MDGQTEP HVSSOP (10)
ORDER NUMBER
3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
4 Simplified Schematic
VIN
Efficiency vs Load Current
PWRGD
100
TPS54060
90
80
BOOT
PH
SS /TR
RT /CLK
COMP
70
Efficiency (%)
EN
60
50
40
30
VSENSE
VI = 12 V
VO = 3.3 V
ƒsw = 500 kHz
20
10
GND
0
0
0.05
0.1
0.15
0.2 0.25 0.3 0.35
Load Current (A)
0.4
0.45
0.5
C033
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS54060-EP
SLVSCF8 – JULY 2014
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
1
2
3
4
7.1
7.2
7.3
7.4
7.5
7.6
4
4
4
5
5
7
Absolute Maximum Ratings .....................................
Handling Ratings ......................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
8.4 Device Functional Modes........................................ 27
9
Application and Implementation ........................ 29
9.1 Application Information............................................ 29
9.2 Typical Application .................................................. 29
10 Power Supply Recommendations ..................... 38
10.1 Power Dissipation Estimate .................................. 38
10.2 Power Supply Considerations............................... 38
11 Layout................................................................... 40
11.1 Layout Guidelines ................................................. 40
11.2 Layout Example .................................................... 41
12 Device and Documentation Support ................. 42
12.1
12.2
12.3
12.4
Detailed Description ............................................ 11
8.1 Overview ................................................................. 11
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 12
Device Support......................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
42
42
42
42
13 Mechanical, Packaging, and Orderable
Information ........................................................... 42
5 Revision History
2
DATE
REVISION
NOTES
July 2014
*
Initial release.
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Copyright © 2014, Texas Instruments Incorporated
TPS54060-EP
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SLVSCF8 – JULY 2014
6 Pin Configuration and Functions
DGQ Package
10 Pins
(Top View)
BOOT
VIN
EN
SS/TR
RT/CLK
1
10
2
9
3
4
5
Thermal
Pad
(11)
8
7
6
PH
GND
COMP
VSENSE
PWRGD
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
BOOT
1
O
A bootstrap capacitor is required between BOOT and PH. If the voltage on this capacitor is below the
minimum required by the output device, the output is forced to switch off until the capacitor is refreshed.
COMP
8
O
Error amplifier output, and input to the output switch current comparator. Connect frequency compensation
components to this pin.
EN
3
I
Enable pin, internal pullup current source. Pull below 1.2 V to disable. Float to enable. Adjust the input
undervoltage lockout (UVLO) with two resistors.
GND
9
—
PH
10
I
PowerPAD
11
—
GND pin must be electrically connected to the exposed pad on the printed circuit board for proper operation.
PWRGD
6
O
An open-drain output, asserts low if output voltage is low due to thermal shutdown, dropout, overvoltage, or
EN shut down.
Ground
The source of the internal high-side power MOSFET.
RT/CLK
5
I
Resistor timing and external clock. An internal amplifier holds this pin at a fixed voltage when using an
external resistor to ground to set the switching frequency. If the pin is pulled above the PLL upper threshold,
a mode change occurs and the pin becomes a synchronization input. The internal amplifier is disabled and
the pin is a high impedance clock input to the internal PLL. If clocking edges stop, the internal amplifier is reenabled and the mode returns to a resistor set function.
SS/TR
4
I
Slow-start and tracking. An external capacitor connected to this pin sets the output rise time. Because the
voltage on this pin overrides the internal reference, it can be used for tracking and sequencing.
VIN
2
I
Input supply voltage, 3.5 to 60 V.
VSENSE
7
I
Inverting node of the transconductance (gM) error amplifier.
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7 Specifications
7.1 Absolute Maximum Ratings (1)
over operating temperature range (unless otherwise noted)
MIN
MAX
VIN
–0.3
65
EN
–0.3
5
BOOT
Input voltage
75
VSENSE
–0.3
3
COMP
–0.3
3
PWRGD
–0.3
6
SS/TR
–0.3
3
RT/CLK
–0.3
3.6
–0.6
65
–2
65
–200
200
BOOT-PH
Output voltage
Source current
PAD to GND
mV
100
μA
BOOT
100
mA
10
μA
VSENSE
Current limit
A
100
μA
RT/CLK
VIN
Current limit
A
100
μA
COMP
PWRGD
SS/TR
Operating junction temperature
(1)
V
EN
PH
Sink current
V
8
PH
PH, 10-ns transient
Voltage difference
UNIT
–55
10
mA
200
μA
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 Handling Ratings
MIN
Tstg
Storage temperature range
V(ESD)
(1)
Electrostatic Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
discharge
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2)
(1)
(2)
MAX
UNIT
°C
–65
150
–1000
1000
–500
500
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
TA
Ambient temperature
–55
125
°C
TJ
Junction temperature
–55
150
°C
3.5
60
V
V(VIN)
4
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TPS54060-EP
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SLVSCF8 – JULY 2014
7.4 Thermal Information
TPS54060
THERMAL METRIC (1) (2)
DGQ (10 PINS)
Junction-to-ambient thermal resistance (standard board)
62.5
Junction-to-ambient thermal resistance (custom board) (3)
57
RθJC(top)
Junction-to-case (top) thermal resistance
83
RθJB
Junction-to-board thermal resistance
28
ψJT
Junction-to-top characterization parameter
1.7
ψJB
Junction-to-board characterization parameter
20.1
RθJC(bot)
Junction-to-case (bottom) thermal resistance
21
RθJA
(1)
(2)
(3)
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information.
Test boards conditions:
(a) 3 inches × 3 inches, 2 layers, thickness: 0.062 inch
(b) 2-oz. copper traces located on the top of the PCB
(c) 2-oz. copper ground plane, bottom layer
(d) 6 thermal vias (13 mil) located under the device package
7.5 Electrical Characteristics
TJ = –55°C to 150°C, VIN = 3.5 to 60 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage
3.5
60
Internal UVLO threshold
No voltage hysteresis, rising and falling
2.5
Shutdown supply current
V(EN) = 0 V, 3.5 V ≤ V(VIN) ≤ 60 V
1.3
8
Operating: nonswitching supply
current
V(VSENSE) = 0.83 V, V(VIN) = 12 V
116
150
1.25
1.6
V
V
μA
ENABLE AND UVLO (EN PIN)
Enable threshold voltage
Input current
No voltage hysteresis, rising and falling
0.9
Enable threshold 50 mV
–3.8
Enable threshold –50 mV
–0.9
Hysteresis current
V
μA
μA
–2.9
VOLTAGE REFERENCE
Voltage reference
TJ = 25°C
0.792
0.8
0.808
0.78
0.8
0.821
V
HIGH-SIDE MOSFET
On-resistance
V(VIN) = 3.5 V, BOOT-PH = 3 V
300
V(VIN) = 12 V, BOOT-PH = 6 V
200
465
mΩ
ERROR AMPLIFIER
Input current
50
nA
Error amplifier transconductance (gM) –2 μA < ICOMP < 2 μA, VCOMP = 1 V
97
μMhos
Error amplifier transconductance (gM) –2 μA < ICOMP < 2 μA, VCOMP = 1 V,
during slow start
V(VSENSE) = 0.4 V
26
μMhos
Error amplifier dc gain
V(VSENSE) = 0.8 V
Error amplifier bandwidth
Error amplifier source/sink
COMP to switch current
transconductance
Copyright © 2014, Texas Instruments Incorporated
V(COMP) = 1 V, 100 mV overdrive
10000
V/V
2700
kHz
±7
μA
1.9
A/V
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Electrical Characteristics (continued)
TJ = –55°C to 150°C, VIN = 3.5 to 60 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
0.5
0.94
A
182
°C
CURRENT LIMIT
Current limit threshold
V(VIN) = 12 V
THERMAL SHUTDOWN
Thermal shutdown
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
ƒSW
Switching frequency range using RT
mode
V(VIN) = 12 V
130
Switching frequency
V(VIN) = 12 V, RT = 200 kΩ
440
Switching frequency range using
CLK mode
V(VIN) = 12 V
300
Minimum CLK input pulse width
581
2500
kHz
740
kHz
2200
kHz
40
RT/CLK high threshold
V(VIN) = 12 V
RT/CLK low threshold
V(VIN) = 12 V
1.9
RT/CLK falling edge to PH rising
edge delay
Measured at 500 kHz with RT resistor in series
PLL lock in time
Measured at 500 kHz
0.5
ns
2.2
V
0.7
V
60
ns
100
μs
2
μA
mV
SLOW START AND TRACKING (SS/TR)
Charge current
V(SS/TR) = 0.4 V
SS/TR-to-VSENSE matching
V(SS/TR) = 0.4 V
45
SS/TR-to-reference crossover
98% nominal
1.0
V
SS/TR discharge current (overload)
V(VSENSE) = 0 V, V(SS/TR) = 0.4 V
112
μA
SS/TR discharge voltage
V(VSENSE) = 0 V
54
mV
POWER GOOD (PWRGD PIN)
VSENSE falling (fault)
V(VSENSE)
6
VSENSE threshold
92%
VSENSE rising (good)
94%
VSENSE rising (fault)
109%
VSENSE falling (good)
107%
Hysteresis
VSENSE falling
Output high leakage
V(VSENSE) = VREF, V(PWRGD) = 5.5 V, 25°C
10
On resistance
I(PWRGD) = 3 mA, V(VSENSE) < 0.79 V
50
Minimum VIN for defined output
V(PWRGD) < 0.5 V, I(PWRGD) = 100 μA
0.95
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2%
nA
Ω
1.5
V
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SLVSCF8 – JULY 2014
500
0.815
400
0.810
Voltage Reference (V)
Static Drain-Source On-6WDWH5HVLVWDQFHP
7.6 Typical Characteristics
300
200
100
0.805
0.800
0.795
BOOT-PH = 3 V
BOOT-PH = 6 V
0
0.790
±75 ±55 ±35 ±15
5
25
45
65
85 105 125 145 165
Junction Temperature (C)
±75 ±55 ±35 ±15
VIN = 12 V
Figure 1. On Resistance vs Junction Temperature
65
85 105 125 145 165
C002
Figure 2. Voltage Reference vs Junction Temperature
Switching Frequency (kHz)
Switch Current (A)
45
600
0.9
0.8
0.7
0.6
590
580
570
560
550
0.5
±75 ±55 ±35 ±15
5
25
45
65
±75 ±55 ±35 ±15
85 105 125 145 165
Junction Temperature (C)
VIN = 12 V
2000
400
Switching Frequency (kHz)
500
1000
500
0
25
VIN = 12 V
50
75
100
125
150
RT/CLK Resistance (kW)
175
200
Figure 5. Switching Frequency vs RT/CLK Resistance High
Frequency Range
Copyright © 2014, Texas Instruments Incorporated
45
65
85 105 125 145 165
C002
RT = 200 kΩ
300
200
100
0
200
300
400
C005
TJ = 25°C
25
Figure 4. Switching Frequency vs Junction Temperature
Figure 3. Switch Current Limit vs Junction Temperature
2500
1500
5
Junction Temperature (C)
C002
VIN = 12 V
Switching Frequency (kHz)
25
VIN = 12 V
1.0
0
5
Junction Temperature (C)
C001
VIN = 12 V
500 600 700 800 900 1000 1100 1200
RT/CLK Resistance (kW)
C006
TJ = 25°C
Figure 6. Switching Frequency vs RT/CLK Resistance Low
Frequency Range
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Typical Characteristics (continued)
130
40.000
110
gm (µA/V)
gm (µA/V)
30.000
90
20.000
70
50
10.000
±75 ±55 ±35 ±15
5
25
45
65
±75 ±55 ±35 ±15
85 105 125 145 165
Junction Temperature (C)
1.250
±3.65
1.230
±3.70
1.210
±3.75
I(EN) (µA)
Threshold (V)
45
65
85 105 125 145 165
C002
Figure 8. EA Transconductance vs Junction Temperature
Figure 7. EA Transconductance During Slow Start vs
Junction Temperature
1.190
1.170
±3.80
±3.85
1.150
±3.90
±75 ±55 ±35 ±15
5
25
45
65
85 105 125 145 165
Junction Temperature (C)
±75 ±55 ±35 ±15
VIN = 12 V
Figure 9. EN Pin Voltage vs Junction Temperature
±0.600
±2.050
±0.620
±2.100
I(SS/TR) (µA)
±2.000
±0.640
±2.200
±0.680
±2.250
±75 ±55 ±35 ±15
5
25
45
65
85 105 125 145 165
Junction Temperature (C)
Figure 11. EN Pin Current vs Junction Temperature
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65
85 105 125 145 165
C002
V(EN) = Threshold 50 mV
±2.300
±75 ±55 ±35 ±15
5
25
45
65
85 105 125 145 165
Junction Temperature (C)
C002
V(EN) = Threshold –50 mV
45
±2.150
±0.660
±0.700
25
Figure 10. EN Pin Current vs Junction Temperature
±0.580
VIN = 12 V
5
Junction Temperature (C)
C002
VIN = 12 V
I(EN) (µA)
25
VIN = 12 V
VIN = 12 V
8
5
Junction Temperature (C)
C002
C002
VIN = 12 V
Figure 12. SS/TR Charge Current vs Junction Temperature
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SLVSCF8 – JULY 2014
115.000
100
110.000
80
% of Nominal fsw
I(SS/TR) (µA)
Typical Characteristics (continued)
105.000
100.000
60
40
95.000
20
90.000
±75 ±55 ±35 ±15
5
25
45
65
85 105 125 145 165
Junction Temperature (C)
0
C002
0
VIN = 12 V
0.2
0.4
VSENSE (V)
VIN = 12 V
Figure 13. SS/TR Discharge Current vs Junction
Temperature
0.6
0.8
C014
TJ = 25°C
Figure 14. Switching Frequency vs VSENSE
2
1.500
1.5
I(VIN) (μA)
I(VIN) (µA)
1.000
0.500
1
0.5
0.000
5
±75 ±55 ±35 ±15
25
45
65
85 105 125 145 165
Junction Temperature (C)
0
C002
0
10
20
VIN = 12 V
30
40
Input Voltage (V)
50
60
C016
TJ = 25°C
Figure 15. Shutdown Supply Current vs Junction
Temperature
Figure 16. Shutdown Supply Current vs Input Voltage (VIN)
140
130.000
125.000
130
I(VIN) (μA)
I(VIN) (µA)
120.000
115.000
110.000
120
110
105.000
100
100.000
±75 ±55 ±35 ±15
5
25
45
65
85 105 125 145 165
Junction Temperature (C)
VIN = 12 V
90
C002
V(VSENSE) = 0.83 V
0
20
TJ = 25°C
Figure 17. VIN Supply Current vs Junction Temperature
Copyright © 2014, Texas Instruments Incorporated
40
60
Input Voltage (V)
C018
V(VSENSE) = 0.83 V
Figure 18. VIN Supply Current vs Input Voltage
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Typical Characteristics (continued)
120.00
PWRGD Threshold (% of Vref)
80.000
RDSON ()
60.000
40.000
20.000
110.00
100.00
90.00
VSENSE Rising (Fault)
VSENSE Falling (Good)
VSENSE Rising (Good)
VSENSE Falling (Fault)
80.00
0.000
±75 ±55 ±35 ±15
5
25
45
65
±75 ±55 ±35 ±15
85 105 125 145 165
Junction Temperature (C)
5
25
45
65
85 105 125 145 165
Junction Temperature (C)
C002
C002
VIN = 12 V
VIN = 12 V
Figure 20. PWRGD Threshold vs Junction Temperature
Figure 19. PWRGD On Resistance vs Junction Temperature
2.400
2.580
2.560
2.300
2.520
V(VIN) (V)
V(BOOT-PH) (V)
2.540
2.200
2.100
2.000
2.500
2.480
2.460
2.440
1.900
2.420
1.800
2.400
±75 ±55 ±35 ±15
5
25
45
65
85 105 125 145 165
Junction Temperature (C)
±75 ±55 ±35 ±15
25
45
65
85 105 125 145 165
C002
Figure 22. Input Voltage (UVLO) vs Junction Temperature
55.000
400
50.000
Offset (mV)
Offset (mV)
Figure 21. Boot-PH UVLO vs Junction Temperature
500
300
5
Junction Temperature (C)
C002
45.000
40.000
200
35.000
100
30.000
±75 ±55 ±35 ±15
0
0
100
200
VIN = 12 V
300
400
500
VSENSE (mV)
600
700
800
25
45
65
85 105 125 145 165
VIN = 12 mV
C002
V(SS/TR) = 0.2 V
TJ = 25°C
Figure 23. SS/TR To Vsense Offset vs VSENSE
10
C023
5
Junction Temperature (C)
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Figure 24. SS/TR To VSENSE Offset vs Temperature
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8 Detailed Description
8.1 Overview
The TPS54060 device is a 60-V, 0.5-A, step-down (buck) regulator with an integrated high-side N-channel
MOSFET. To improve performance during line and load transients, the device implements a constant frequency,
current mode control, which reduces output capacitance and simplifies external frequency compensation design.
The wide switching frequency of 100 to 2500 kHz allows for efficiency and size optimization when selecting the
output filter components. The switching frequency is adjusted using a resistor to ground on the RT/CLK pin. The
device has an internal phase lock loop (PLL) on the RT/CLK pin that is used to synchronize the power switch
turn on to a falling edge of an external system clock.
The TPS54060 has a default start-up voltage of approximately 2.5 V. The EN pin has an internal pullup current
source that can be used to adjust the input voltage UVLO threshold with two external resistors. In addition, the
pullup current provides a default condition. When the EN pin is floating, the device will operate. The operating
current is 116 μA when not switching and under no load. When the device is disabled, the supply current is
1.3 μA.
The integrated 200-mΩ high-side MOSFET allows for high-efficiency power supply designs capable of delivering
0.5 A of continuous current to a load. The TPS54060 reduces the external component count by integrating the
boot recharge diode. The bias voltage for the integrated high-side MOSFET is supplied by a capacitor on the
BOOT to PH pin. The boot capacitor voltage is monitored by an UVLO circuit and will turn the high-side MOSFET
off when the boot voltage falls below a preset threshold. The TPS54060 can operate at high duty cycles because
of the boot UVLO. The output voltage can be stepped down to as low as the 0.8-V reference.
The TPS54060 has a power good comparator (PWRGD), which asserts when the regulated output voltage is
less than 92% or greater than 109% of the nominal output voltage. The PWRGD pin is an open-drain output
which deasserts when the VSENSE pin voltage is between 94% and 107% of the nominal output voltage,
allowing the pin to transition high when a pullup resistor is used.
The TPS54060 minimizes excessive output overvoltage (OV) transients by taking advantage of the OV power
good comparator. When the OV comparator is activated, the high-side MOSFET is turned off and masked from
turning on until the output voltage is lower than 107%.
The SS/TR (slow start/tracking) pin is used to minimize inrush currents or provide power supply sequencing
during power up. A small value capacitor should be coupled to the pin to adjust the slow start time. A resistor
divider can be coupled to the pin for critical power supply sequencing requirements. The SS/TR pin is discharged
before the output powers up. This discharging ensures a repeatable restart after an overtemperature fault, UVLO
fault, or a disabled condition.
The TPS54060, also, discharges the slow-start capacitor during overload conditions with an overload recovery
circuit. The overload recovery circuit will slow start the output from the fault voltage to the nominal regulation
voltage after a fault condition is removed. A frequency foldback circuit reduces the switching frequency during
startup and overcurrent fault conditions to help control the inductor current.
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8.2 Functional Block Diagram
PWRGD
6
EN
3
VIN
2
Shutdown
UV
Thermal
Shutdown
Enable
Comparator
Logic
UVLO
Shutdown
Shutdown
Logic
OV
Enable
Threshold
Boot
Charge
Voltage
Reference
Boot
UVLO
Minimum
Clamp
Pulse
Skip
ERROR
AMPLIFIER
PWM
Comparator
VSENSE 7
Current
Sense
1 BOOT
Logic
And
PWM Latch
SS/TR 4
Shutdown
Slope
Compensation
10 PH
COMP 8
11 POWERPAD
Frequency
Shift
Overload
Recovery
Maximum
Clamp
Oscillator
with PLL
TPS54060 Block Diagram
9 GND
5
RT/CLK
8.3 Feature Description
8.3.1 Fixed Frequency PWM Control
The TPS54060 uses an adjustable fixed frequency, peak current mode control. The output voltage is compared
through external resistors on the VSENSE pin to an internal voltage reference by an error amplifier which drives
the COMP pin. An internal oscillator initiates the turn-on of the high-side power switch. The error amplifier output
is compared to the high-side power switch current. When the power switch current reaches the level set by the
COMP voltage, the power switch is turned off. The COMP pin voltage increases and decreases as the output
current increases and decreases. The device implements a current limit by clamping the COMP pin voltage to a
maximum level. Eco-Mode implements with a minimum clamp on the COMP pin.
8.3.2 Slope Compensation Output Current
The TPS54060 adds a compensating ramp to the switch current signal. This slope compensation prevents
subharmonic oscillations. The available peak inductor current remains constant over the full duty cycle range.
8.3.3 Low-Dropout Operation and Bootstrap Voltage (Boot)
The TPS54060 has an integrated boot regulator, and requires a small ceramic capacitor between the BOOT and
PH pins to provide the gate drive voltage for the high-side MOSFET. The BOOT capacitor is refreshed when the
high-side MOSFET is off and the low-side diode conducts. The value of this ceramic capacitor should be 0.1 μF.
TI recommends a ceramic capacitor with an X7R or X5R grade dielectric with a voltage rating of 10 V or higher
because of the stable characteristics overtemperature and voltage.
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Feature Description (continued)
To improve dropout, the TPS54060 is designed to operate at 100% duty cycle as long as the BOOT to PH pin
voltage is greater than 2.1 V. When the voltage from BOOT to PH drops below 2.1 V, the high-side MOSFET is
turned off using an UVLO circuit, which allows the low-side diode to conduct and refresh the charge on the
BOOT capacitor. Because the supply current sourced from the BOOT capacitor is low, the high-side MOSFET
can remain on for more switching cycles than are required to refresh the capacitor, thus the effective duty cycle
of the switching regulator is high.
The effective duty cycle during dropout of the regulator is mainly influenced by the voltage drops across the
power MOSFET, inductor resistance, low-side diode and printed circuit board resistance. During operating
conditions in which the input voltage drops and the regulator is operating in continuous conduction mode (CCM),
the high-side MOSFET can remain on for 100% of the duty cycle to maintain output regulation, until the BOOT to
PH voltage falls below 2.1 V.
Take care in maximum duty cycle applications which experience extended time periods with light loads or no
load. When the voltage across the BOOT capacitor falls below the 2.1-V UVLO threshold, the high-side MOSFET
is turned off, but there may not be enough inductor current to pull the PH pin down to recharge the BOOT
capacitor. The high-side MOSFET of the regulator stops switching because the voltage across the BOOT
capacitor is less than 2.1 V. The output capacitor then decays until the difference in the input voltage and output
voltage is greater than 2.1 V, at which point the BOOT UVLO threshold is exceeded, and the device starts
switching again until the desired output voltage is reached. This operating condition persists until the input
voltage and/or the load current increases. TI recommends to adjust the VIN stop voltage greater than the BOOT
UVLO trigger condition at the minimum load of the application using the adjustable VIN UVLO feature with
resistors on the EN pin.
The start and stop voltages for typical 3.3- and 5-V output applications are shown in Figure 25 and Figure 26.
The voltages are plotted versus load current. The start voltage is defined as the input voltage needed to regulate
the output within 1%. The stop voltage is defined as the input voltage at which the output drops by 5% or stops
switching.
4
5.6
3.8
5.4
3.6
Input Voltage (V)
Input Voltage (V)
During high duty cycle conditions, the inductor current ripple increases while the BOOT capacitor is being
recharged, resulting in an increase in ripple voltage on the output. This increase occurs because the recharge
time of the boot capacitor is longer than the typical high-side off time when switching occurs every cycle.
Start
3.4
Stop
5.2
Start
5
Stop
4.8
3.2
3
4.6
0
0.05
0.10
Output Current (A)
0.15
VO = 3.3 V
Figure 25. 3.3-V Start/Stop Voltage
0.20
0
0.05
C025
0.10
Output Current (A)
0.15
0.20
C026
VO = 5 V
Figure 26. 5-V Start/Stop Voltage
8.3.4 Error Amplifier
The TPS54060 has a transconductance amplifier for the error amplifier. The error amplifier compares the
VSENSE voltage to the lower of the SS/TR pin voltage or the internal 0.8-V voltage reference. The
transconductance (gm) of the error amplifier is 97 μA/V during normal operation. During slow-start operation, the
transconductance is a fraction of the normal operating gm. When the voltage of the VSENSE pin is below 0.8 V
and the device is regulating using the SS/TR voltage, the gm is 25 μA/V.
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The frequency compensation components (capacitor, series resistor, and capacitor) are added to the COMP pin
to ground.
8.3.5 Voltage Reference
The voltage reference system produces a precise ±2% voltage reference over temperature by scaling the output
of a temperature stable bandgap circuit.
8.3.6 Adjusting the Output Voltage
The output voltage is set with a resistor divider from the output node to the VSENSE pin. It is recommended to
use 1% tolerance or better divider resistors. Start with a 10 kΩ for the R2 resistor and use the Equation 1 to
calculate R1. To improve efficiency at light loads consider using larger value resistors. If the values are too high
the regulator will be more susceptible to noise and voltage errors from the VSENSE input current will be
noticeable
æ Vout - 0.8V ö
R1 = R2 ´ ç
÷
0.8 V
è
ø
(1)
8.3.7 Enable and Adjusting UVLO
The TPS54060 is disabled when the VIN pin voltage falls below 2.5 V. If an application requires a higher UVLO,
use the EN pin as shown in Figure 27 to adjust the input voltage UVLO by using the two external resistors.
Though it is not necessary to use the UVLO adjust registers for operation, TI highly recommends to provide
consistent power-up behavior. The EN pin has an internal pullup current source, I1, of 0.9 μA that provides the
default condition of the TPS54060 device operating when the EN pin floats. After the EN pin voltage exceeds
1.25 V, an additional 2.9 μA of hysteresis, Ihys, is added. This additional current facilitates input voltage
hysteresis. Use Equation 2 to set the external hysteresis for the input voltage. Use Equation 3 to set the input
start voltage.
TPS54060
VIN
Ihys
I1
0.9 mA
R1
2.9 mA
+
R2
EN
1.25 V
-
Figure 27. Adjustable UVLO
V
- VSTOP
R1 = START
IHYS
R2 =
VENA
VSTART - VENA
+ I1
R1
(2)
(3)
Figure 28 shows another technique to add input voltage hysteresis. Use this method if the resistance values are
high from the previous method and a wider voltage hysteresis is needed. The resistor R3 sources additional
hysteresis current into the EN pin.
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TPS54060
VIN
R1
Ihys
I1
0.9 mA
2.9 mA
+
R2
EN
1.25 V
R3
-
VOUT
Figure 28. Adding Additional Hysteresis
R1 =
R2 =
VSTART - VSTOP
V
IHYS + OUT
R3
(4)
VENA
VSTART - VENA
V
+ I1 - ENA
R1
R3
(5)
8.3.8 Slow Start/Tracking Pin (SS/TR)
The TPS54060 effectively uses the lower voltage of the internal voltage reference or the SS/TR pin voltage as
the power-supply's reference voltage and regulates the output accordingly. A capacitor on the SS/TR pin to
ground implements a slow start time. The TPS54060 has an internal pullup current source of 2 μA that charges
the external slow start capacitor. Equation 6 shows the calculations for the slow start time (10% to 90%). The
voltage reference (VREF) is 0.8 V and the slow start current (ISS) is 2 μA. The slow start capacitor should remain
lower than 0.47 μF and greater than 0.47 nF.
Tss(ms) ´ Iss(m A)
Css(nF) =
Vref (V) ´ 0.8
(6)
At power up, the TPS54060 does not start switching until the slow-start pin is discharged to less than 40 mV to
ensure a proper power up, see Figure 29.
Also, during normal operation, the TPS54060 stops switching and the SS/TR must be discharged to 40 mV when
either the VIN UVLO is exceeded, EN pin is pulled below 1.25 V, or a thermal shutdown event occurs.
The VSENSE voltage follows the SS/TR pin voltage with a 45-mV offset up to 85% of the internal voltage
reference. When the SS/TR voltage is greater than 85% on the internal reference voltage, the offset increases as
the effective system reference transitions from the SS/TR voltage to the internal voltage reference (see
Figure 23). The SS/TR voltage ramps linearly until clamped at 1.7 V.
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EN
SS/TR
VSENSE
VOUT
Figure 29. Operation of SS/TR Pin When Starting
8.3.9 Overload Recovery Circuit
The TPS54060 has an overload recovery (OLR) circuit. The OLR circuit slow starts the output from the overload
voltage to the nominal regulation voltage after the fault condition is removed. The OLR circuit discharges the
SS/TR pin to a voltage slightly greater than the VSENSE pin voltage using an internal pulldown of 100 μA when
the error amplifier is changed to a high voltage from a fault condition. When the fault condition is removed, the
output slow starts from the fault voltage to nominal output voltage.
8.3.10 Sequencing
Many of the common power supply sequencing methods can be implemented using the SS/TR, EN, and
PWRGD pins. The sequential method can be implemented using an open-drain output of a power on reset pin of
another device. Figure 30 shows the sequential method using two TPS54060 devices. The power good is
coupled to the EN pin on the TPS54060, which enables the second power supply after the primary supply
reaches regulation. If needed, a 1-nF ceramic capacitor on the EN pin of the second power supply provides a 1ms start-up delay. Figure 31 shows the results of Figure 30.
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TPS54060
EN
PWRGD
EN
EN1
SS /TR
SS /TR
PWRGD1
PWRGD
VOUT1
VOUT2
Figure 30. Schematic for Sequential Start-Up
Sequence
Figure 31. Sequential Startup Using EN and
PWRGD
TPS54160
TPS54060
3
EN
4
SS/TR
6
PWRGD
EN1, EN2
VOUT1
TPS54060
TPS54160
VOUT2
3
EN
4
SS/TR
6
PWRGD
Figure 32. Schematic for Ratiometric Start-Up
Sequence
Figure 33. Ratiometric Startup Using Coupled
SS/TR Pins
Figure 32 shows a method for ratiometric start-up sequence by connecting the SS/TR pins together. The
regulator outputs ramp up and reach regulation at the same time. When calculating the slow start time, the pullup
current source must be doubled in Equation 6. Figure 33 shows the results of Figure 32.
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TPS54060
EN
VOUT 1
SS/TR
PWRGD
TPS54060
VOUT 2
EN
R1
SS/ TR
R2
PWRGD
R3
R4
Figure 34. Schematic for Ratiometric and Simultaneous Start-Up Sequence
Ratiometric and simultaneous power supply sequencing can be implemented by connecting the resistor network
of R1 and R2 (see Figure 34) to the output of the power supply that needs to be tracked or another voltage
reference source. Using Equation 7 and Equation 8, the tracking resistors can be calculated to initiate the Vout2
slightly before, after, or at the same time as Vout1. Equation 9 is the voltage difference between Vout1 and
Vout2 at the 95% of nominal output regulation.
The deltaV variable is 0 V for simultaneous sequencing. To minimize the effect of the inherent SS/TR to
VSENSE offset (Vssoffset) in the slow start circuit and the offset created by the pullup current source (Iss) and
tracking resistors, the Vssoffset and Iss are included as variables in the equations.
To design a ratiometric start up in which the Vout2 voltage is slightly greater than the Vout1 voltage when Vout2
reaches regulation, use a negative number in Equation 7 through Equation 9 for deltaV. Equation 9 results in a
positive number for applications in which the Vout2 is slightly lower than Vout1 when Vout2 regulation is
achieved.
Because the SS/TR pin must be pulled below 40 mV before starting after an EN, UVLO, or thermal shutdown
fault, carefully select the tracking resistors to ensure the device will restart after a fault. Make sure the calculated
R1 value from Equation 7 is greater than the value calculated in Equation 10 to ensure the device can recover
from a fault.
As the SS/TR voltage becomes more than 85% of the nominal reference voltage, the Vssoffset becomes larger
as the slow start circuits gradually handoff the regulation reference to the internal voltage reference. The SS/TR
pin voltage must be greater than 1.3 V for a complete handoff to the internal voltage reference, as shown in
Figure 23.
Vout2 + deltaV
Vssoffset
R1 =
´
VREF
Iss
(7)
VREF ´ R1
R2 =
Vout2 + deltaV - VREF
(8)
deltaV = Vout1 - Vout2
(9)
R1 > 2800 ´ Vout1 - 180 ´ deltaV
(10)
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EN
EN
VOUT1
VOUT1
VOUT2
Figure 35. Ratiometric Startup With Tracking
Resistors
VOUT2
Figure 36. Ratiometric Startup With Tracking
Resistors
EN
VOUT1
VOUT2
Figure 37. Simultaneous Startup With Tracking Resistor
8.3.11 Constant Switching Frequency and Timing Resistor (RT/CLK Pin)
The switching frequency of the TPS54060 is adjustable over a wide range from approximately 100 to 2500 kHz
by placing a resistor on the RT/CLK pin. The RT/CLK pin voltage is typically 0.5 V and must have a resistor to
ground to set the switching frequency. To determine the timing resistance for a given switching frequency, use
Equation 11 or the curves in Figure 38 or Figure 39. To reduce the solution size, one would typically set the
switching frequency as high as possible, but consider tradeoffs of the supply efficiency, maximum input voltage,
and minimum controllable on-time.
The minimum controllable on-time is typically 130 ns and limits the maximum operating input voltage.
The maximum switching frequency is also limited by the frequency shift circuit. More details of the maximum
switching frequency follow.
206033
RT (kOhm ) =
¦ sw (kHz )1.0888
(11)
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2500
500
2000
400
Switching Frequency (kHz)
Switching Frequency (kHz)
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1500
1000
500
0
0
25
VI = 12 V
50
75
100
125
150
RT/CLK Resistance (kW)
175
200
300
200
100
0
200
300
400
C005
TJ = 25°C
Figure 38. High Range RT
VI = 12 V
500 600 700 800 900 1000 1100 1200
RT/CLK Resistance (kW)
C006
TJ = 25°C
Figure 39. Low Range RT
8.3.12 Overcurrent Protection and Frequency Shift
The TPS54060 implements current mode control, which uses the COMP pin voltage to turn off the high-side
MOSFET on a cycle-by-cycle basis. Each cycle the switch current and COMP pin voltage are compared. When
the peak switch current intersects the COMP voltage, the high-side switch is turned off. During overcurrent
conditions that pull the output voltage low, the error amplifier responds by driving the COMP pin high, increasing
the switch current. The error amplifier output is clamped internally, which functions as a switch current limit.
To increase the maximum operating switching frequency at high input voltages, the TPS54060 implements a
frequency shift. The switching frequency is divided by 8, 4, 2, and 1 as the voltage ramps from 0 to 0.8 V on
VSENSE pin.
The device implements a digital frequency shift to enable synchronizing to an external clock during normal
startup and fault conditions. Because the device can only divide the switching frequency by 8, there is a
maximum input voltage limit in which the device operates and still has frequency-shift protection.
During short-circuit events (particularly with high input voltage applications), the control loop has a finite minimum
controllable on-time and the output has a low voltage. During the switch on time, the inductor current ramps to
the peak current limit because of the high input voltage and minimum on-time. During the switch off time, the
inductor would usually not have enough off time and output voltage for the inductor to ramp down by the ramp up
amount. The frequency shift effectively increases the off time allowing the current to ramp down.
8.3.13 Selecting the Switching Frequency
Select the switching frequency that is the lower value of the two equations, Equation 12 and Equation 13.
Equation 12 is the maximum switching frequency limitation set by the minimum controllable on-time. Setting the
switching frequency above this value will cause the regulator to skip switching pulses.
Equation 13 is the maximum switching frequency limit set by the frequency shift protection. To have adequate
output short-circuit protection at high input voltages, the switching frequency should be set to be less than the
ƒsw(maxshift) frequency. In Equation 13, to calculate the maximum switching frequency one must take into
account that the output voltage decreases from the nominal voltage to 0 V, the fdiv integer increases from 1 to 8
corresponding to the frequency shift.
In Figure 40, the solid line shows a typical safe operating area regarding frequency shift and assumes the output
voltage is 0 V and the resistance of the inductor is 0.130 Ω, FET on-resistance of 0.2 Ω, and the diode voltage
drop is 0.5 V. The dashed line is the maximum switching frequency to avoid pulse skipping. Enter these
equations in a spreadsheet, other software, or use the SwitcherPro design software to determine the switching
frequency.
æ 1 ö æ (IL ´ Rdc + VOUT + Vd) ö
fSW (max skip ) = ç
÷
÷ ´ çç
÷
è tON ø è (VIN - IL ´ Rhs + Vd) ø
(12)
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fSW (hift ) =
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fdiv æ (IL ´ Rdc + VOUTSC + Vd) ö
´ç
÷
t ON çè (VIN - IL x Rhs + Vd ) ÷ø
(13)
where
• IL = Inductor current
• Rdc = Inductor resistance
• VIN = Maximum input voltage
• VOUT = Output voltage
• VOUTSC = Output voltage during short
• Vd = Diode voltage drop
• RDS(on) = Switch on resistance
• tON = Controllable on-time
• ƒDIV = Frequency divide equals (1, 2, 4, or 8)
Switching Frequency (kHz)
2500
2000
Shift
1500
Skip
1000
500
0
10
20
30
40
Input Voltage (V)
50
60
C027
VO = 3.3 V
Figure 40. Maximum Switching Frequency vs Input Voltage
8.3.14 How to Interface to RT/CLK Pin
The RT/CLK pin can be used to synchronize the regulator to an external system clock. To implement the
synchronization feature, connect a square wave to the RT/CLK pin through the circuit network shown in
Figure 41. The square wave amplitude must transition lower than 0.5 V and higher than 2.2 V on the RT/CLK pin
and have an on-time greater than 40 ns and an off time greater than 40 ns. The synchronization frequency range
is 300 to 2200 kHz. The rising edge of the PH will be synchronized to the falling edge of RT/CLK pin signal. The
external synchronization circuit should be designed so that the device will have the default frequency set resistor
connected from the RT/CLK pin to ground should the synchronization signal turn off. TI recommends to use a
frequency set resistor connected as shown in Figure 41 through a 50-Ω resistor to ground. The resistor should
set the switching frequency close to the external CLK frequency. TI recommends to AC couple the
synchronization signal through a 10-pF ceramic capacitor to RT/CLK pin and a 4-kΩ series resistor. The series
resistor reduces PH jitter in heavy-load applications when synchronizing to an external clock and in applications
which transition from synchronizing to RT mode. The first time the CLK is pulled above the CLK threshold, the
device switches from the RT resistor frequency to PLL mode. The internal 0.5-V voltage source is removed and
the CLK pin becomes high impedance as the PLL starts to lock onto the external signal. Because there is a PLL
on the regulator, the switching frequency can be higher or lower than the frequency set with the external resistor.
The device transitions from the resistor mode to the PLL mode and then increases or decreases the switching
frequency until the PLL locks onto the CLK frequency within 100 µs.
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When the device transitions from the PLL to resistor mode, the switching frequency slows down from the CLK
frequency to 150 kHz, then reapplies the 0.5-V voltage, and then the resistor sets the switching frequency. The
switching frequency is divided by 8, 4, 2, and 1 as the voltage ramps from 0 to 0.8 V on VSENSE pin. The device
implements a digital frequency shift to enable synchronizing to an external clock during normal startup and fault
conditions. Figure 42, Figure 43, and Figure 44 show the device synchronized to an external system clock in
CCM, discontinuous conduction mode (DCM), and pulse skip mode (PSM).
TPS54060
10 pF
4 kW
PLL
Rfset
EXT
Clock
Source
50 W
RT/CLK
Figure 41. Synchronizing to a System Clock
PH
PH
EXT
EXT
IL
IL
Figure 42. Plot of Synchronizing in CCM
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Figure 43. Plot of Synchronizing in DCM
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PH
EXT
IL
Figure 44. Plot of Synchronizing in PSM
8.3.15 Power Good (PWRGD Pin)
The PWRGD pin is an open-drain output. When the VSENSE pin is between 94% and 107% of the internal
voltage reference, the PWRGD pin is de-asserted and the pin floats. TI recommends to use a pullup resistor
between the values of 10 and 100 kΩ to a voltage source that is 5.5 V or less. The PWRGD is in a defined state
after the VIN input voltage is greater than 1.5 V, but with reduced current sinking capability. The PWRGD
achieves full current sinking capability as VIN input voltage approaches 3 V.
The PWRGD pin is pulled low when the VSENSE is lower than 92% or greater than 109% of the nominal internal
reference voltage. Also, the PWRGD is pulled low, if the UVLO or thermal shutdown are asserted or the EN pin
pulled low.
8.3.16 Overvoltage Transient Protection (OVTP)
The TPS54060 incorporates an OVTP circuit to minimize voltage overshoot when recovering from output fault
conditions or strong unload transients on power supply designs with low-value output capacitance. For example,
when the power supply output is overloaded, the error amplifier compares the actual output voltage to the
internal reference voltage. If the VSENSE pin voltage is lower than the internal reference voltage for a
considerable time, the output of the error amplifier responds by clamping the error amplifier output to a high
voltage, thus requesting the maximum output current. When the condition is removed, the regulator output rises
and the error amplifier output transitions to the steady-state duty cycle. In some applications, the power supply
output voltage can respond faster than the error amplifier output can respond, this actuality leads to the
possibility of an output overshoot. The OVTP feature minimizes the output overshoot, when using a low-value
output capacitor, by implementing a circuit to compare the VSENSE pin voltage to OVTP threshold which is
109% of the internal voltage reference. If the VSENSE pin voltage is greater than the OVTP threshold, the highside MOSFET is disabled, preventing current from flowing to the output and minimizing output overshoot. When
the VSENSE voltage drops lower than the OVTP threshold, the high-side MOSFET is allowed to turn on at the
next clock cycle.
8.3.17 Thermal Shutdown
The device implements an internal thermal shutdown to protect itself if the junction temperature exceeds 182°C.
The thermal shutdown forces the device to stop switching when the junction temperature exceeds the thermal
trip threshold. After the die temperature decreases below 182°C, the device reinitiates the power-up sequence by
discharging the SS/TR pin.
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8.3.18 Small Signal Model for Loop Response
Figure 45 shows an equivalent model for the TPS54060 control loop which can be modeled in a circuit simulation
program to check frequency response and dynamic load response. The error amplifier is a transconductance
amplifier with a gmEA of 97 μA/V. The error amplifier can be modeled using an ideal voltage-controlled current
source. The resistor, Ro, and capacitor, Co, model the open-loop gain and frequency response of the amplifier.
The 1-mV AC voltage source between the nodes a and b effectively breaks the control loop for the frequency
response measurements. Plotting 'c' shows the small signal response of the frequency compensation. Plotting 'a'
shows the small signal response of the overall loop. The dynamic loop response can be checked by replacing RL
with a current source with the appropriate load step amplitude and step rate in a time domain analysis. This
equivalent model is only valid for continuous conduction mode designs.
PH
VO
Power Stage
gmps 1.9 A/V
a
R1
RESR
RL
COMP
c
0.8 V
R3
C2
CO
RO
COUT
VSENSE
gmea
97 mA/V
R2
C1
Figure 45. Small Signal Model for Loop Response Schematic
8.3.19 Simple Small Signal Model for Peak Current Mode Control
Figure 46 describes a simple small signal model that can be used to understand how to design the frequency
compensation. The TPS54060 power stage can be approximated to a voltage-controlled current source (duty
cycle modulator) supplying current to the output capacitor and load resistor. The control to output transfer
function is shown in Equation 14 and consists of a DC gain, one dominant pole, and one ESR zero. The quotient
of the change in switch current and the change in COMP pin voltage (node c in Figure 45) is the power stage
transconductance. The gmPS for the TPS54060 is 1.9 A/V. The low-frequency gain of the power stage frequency
response is the product of the transconductance and the load resistance as shown in Equation 15.
As the load current increases and decreases, the low-frequency gain decreases and increases, respectively. This
variation with the load may seem problematic at first glance, but the dominant pole moves with the load current
(see Equation 16). The combined effect is highlighted by the dashed line in the right half of Figure 46. As the
load current decreases, the gain increases and the pole frequency lowers, keeping the 0-dB crossover frequency
the same for the varying load conditions which makes it easier to design the frequency compensation. The type
of output capacitor chosen determines whether the ESR zero has a profound effect on the frequency
compensation design. Using high-ESR aluminum electrolytic capacitors may reduce the number frequency
compensation components needed to stabilize the overall loop because the phase margin increases from the
ESR zero at the lower frequencies (see Equation 17).
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VO
Adc
VC
RESR
fp
RL
gmps
COUT
fz
Figure 46. Simple Small Signal Model and Frequency Response for Peak Current Mode Control
æ
s ö
ç1 +
÷
2
p
´ fZ ø
VOUT
= Adc ´ è
VC
æ
s ö
ç1 +
÷
2p ´ fP ø
è
Adc = gmps ´ RL
(14)
(15)
1
fP =
COUT ´ RL ´ 2p
(16)
1
fZ =
COUT ´ RESR ´ 2p
(17)
8.3.20 Small Signal Model for Frequency Compensation
The TPS54060 uses a transconductance amplifier for the error amplifier and readily supports three of the
commonly-used frequency compensation circuits. Figure 47 shows compensation circuits Type 2A, Type 2B, and
Type 1. Type 2 circuits most likely implemented in high-bandwidth power-supply designs using low-ESR output
capacitors. The Type 1 circuit is used with power-supply designs with high-ESR aluminum electrolytic or tantalum
capacitors. Equation 18 and Equation 19 show how to relate the frequency response of the amplifier to the small
signal model in Figure 47. The open-loop gain and bandwidth are modeled using the RO and CO shown in
Figure 47. See the application section for a design example using a Type 2A network with a low-ESR output
capacitor.
Equation 18 through Equation 27 are provided as a reference for those who prefer to compensate using the
preferred methods. Those who prefer to use prescribed method use the method outlined in the application
section or use switched information.
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VO
R1
VSENSE
gmea
Type 2A
COMP
Type 2B
Type 1
Vref
R2
RO
R3
CO
C1
C2
R3
C2
C1
Figure 47. Types of Frequency Compensation
Aol
A0
P1
Z1
P2
A1
BW
Figure 48. Frequency Response of the Type 2A and Type 2B Frequency Compensation
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Aol(V/V)
gmea
gmea
=
2p ´ BW (Hz)
Ro =
CO
(18)
(19)
æ
ö
s
ç1 +
÷
2p ´ fZ1 ø
è
EA = A0 ´
æ
ö æ
ö
s
s
ç1 +
÷ ´ ç1 +
÷
2
2
p
´
p
´
f
f
P1 ø è
P2 ø
è
(20)
R2
R1 + R2
R2
´ Ro| | R3 ´
R1 + R2
A0 = gmea ´ Ro ´
A1 = gmea
P1 =
Z1 =
P2 =
(21)
(22)
1
2p ´ Ro ´ C1
(23)
1
2p ´ R3 ´ C1
(24)
1
2p ´ R3 | | RO ´ (C2 + CO )
type 2a
(25)
1
P2 =
type 2b
2p ´ R3 | | RO ´ CO
P2 =
2p ´ R O
(26)
1
type 1
´ (C2 + C O )
(27)
8.4 Device Functional Modes
8.4.1 Pulse Skip Eco-Mode
The TPS54060 operates in a pulse skip Eco-mode at light load currents to improve efficiency by reducing
switching and gate drive losses. The TPS54060 is designed so that if the output voltage is within regulation and
the peak switch current at the end of any switching cycle is below the pulse skipping current threshold, the
device enters Eco-mode. This current threshold is the current level corresponding to a nominal COMP voltage or
500 mV.
When in Eco-mode, the COMP pin voltage is clamped at 500 mV and the high-side MOSFET is inhibited. Further
decreases in load current or in output voltage cannot drive the COMP pin below this clamp voltage level.
Because the device is not switching, the output voltage begins to decay. As the voltage control loop
compensates for the falling output voltage, the COMP pin voltage begins to rise. At this time, the high-side
MOSFET is enabled and a switching pulse initiates on the next switching cycle. The peak current is set by the
COMP pin voltage. The output voltage recharges the regulated value (see Figure 49), then the peak switch
current starts to decrease, and eventually falls below the Eco-mode threshold, at which time the device again
enters Eco-mode.
For Eco-mode operation, the TPS54060 senses peak current, not average or load current, so the load current
where the device enters Eco-mode depends on the output inductor value. For example, the circuit in Figure 50
enters Eco-mode at about 20 mA of output current. When the load current is low and the output voltage is within
regulation, the device enters a sleep mode and draws only 116-μA input quiescent current. The internal PLL
remains operating when in sleep mode. When operating at light load currents in PSM, switching transitions occur
synchronously with the external clock signal.
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Device Functional Modes (continued)
VOUT(ac)
IL
PH
Figure 49. PSM Operation
8.4.2 DCM and Eco-Mode Boundary
With an input voltage of 34 V, the power supply enters DCM when the output current is less than 60 mA. The
power supply enters Eco-mode when the output current is lower than 38 mA.
The input current draw at no load is 228 μA.
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9 Application and Implementation
9.1 Application Information
The TPS54060 device is a 60-V, 0.5-A, step-down regulator with an integrated high-side MOSFET.
9.2 Typical Application
9.2.1 Design Requirements
This example details the design of a high-frequency switching regulator using ceramic output capacitors. A few
parameters must be known to start the design process. These parameters are typically determined at the system
level. This example starts with the following known parameters:
Table 1. Design Parameters
DESIGN PARAMETER
Output voltage
Transient response 0- to 1.5-A load step
Maximum output current
Input voltage
Output voltage ripple
EXAMPLE VALUE
3.3 V
ΔVout = 4%
0.5 A
34 V nominal 12 to 48 V
1% of Vout
Start input voltage (rising VIN)
8.9 V
Stop input voltage (falling VIN)
7.9 V
9.2.2 Detailed Design Procedure
9.2.2.1 Selecting the Switching Frequency
The first step is to decide on a switching frequency for the regulator. Typically, the user should choose the
highest switching frequency possible because this produces the smallest solution size. The high switching
frequency allows for lower-valued inductors and smaller-output capacitors compared to a power supply that
switches at a lower frequency. The switching frequency that the user can select is limited by the minimum ontime of the internal power switch, the input voltage, and the output voltage and the frequency shift limitation.
Equation 12 and Equation 13 must be used to find the maximum switching frequency for the regulator; choose
the lower value of the two equations. Switching frequencies higher than these values result in pulse skipping or
the lack of overcurrent protection during a short circuit.
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The typical minimum on-time, tonmin, is 130 ns for the TPS54060. For this example, the output voltage is 3.3 V
and the maximum input voltage is 48 V, which allows for a maximum switch frequency up to 616 kHz when
including the inductor resistance, on-resistance, and diode voltage in Equation 12. To ensure overcurrent
runaway is not a concern during short circuits in your design, use Equation 13 or the solid curve in Figure 40 to
determine the maximum switching frequency. With a maximum input voltage of 48 V, assuming a diode voltage
of 0.5 V, inductor resistance of 130 mΩ, switch resistance of 400 mΩ, a current limit value of 0.94 A, and a shortcircuit output voltage of 0.1 V. The maximum switching frequency is approximately 923 kHz.
Choosing the lower of the two values and adding some margin, a switching frequency of 500 kHz is used. To
determine the timing resistance for a given switching frequency, use Equation 11 or the curve in Figure 38.
The switching frequency is set by resistor R3 shown in Figure 50.
Figure 50. High-Frequency, 3.3-V Output Power Supply Design With Adjusted UVLO
9.2.2.2 Output Inductor Selection (LO)
To calculate the minimum value of the output inductor, use Equation 28.
KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current.
The inductor ripple current is filtered by the output capacitor. Therefore, choosing high inductor ripple currents
impacts the selection of the output capacitor because the output capacitor must have a ripple current rating equal
to or greater than the inductor ripple current. In general, the inductor ripple value is at the discretion of the
designer; however, the following guidelines may be used.
For designs using low-ESR output capacitors such as ceramics, a value as high as KIND = 0.3 may be used.
When using higher-ESR output capacitors, KIND = 0.2 yields better results. Because the inductor ripple current is
part of the PWM control system, the inductor ripple current should always be greater than 30 mA for dependable
operation. In a wide input voltage regulator, it is best to choose an inductor ripple current on the larger side. This
allows the inductor to still have a measurable ripple current with the input voltage at its minimum.
For this design example, use KIND = 0.3, and the minimum inductor value is calculated to be 39.7 μH. For this
design, a nearest standard value was chosen: 47 μH. For the output filter inductor, it is important that the RMS
current and saturation current ratings not be exceeded. The RMS and peak inductor current can be found from
Equation 30 and Equation 31.
For this design, the RMS inductor current is 0.501 A and the peak inductor current is 0.563 A. The chosen
inductor is a MSS1048-473ML. It has a saturation current rating of 1.44 A and an RMS current rating of 1.83 A.
As the equation set demonstrates, lower ripple currents reduce the output voltage ripple of the regulator, but
require a larger value of inductance. Selecting higher ripple currents increases the output voltage ripple of the
regulator, but allows for a lower inductance value.
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The current flowing through the inductor is the inductor ripple current plus the output current. During power up,
faults or transient load conditions, the inductor current can increase above the calculated peak inductor current
level calculated above. In transient conditions, the inductor current can increase up to the switch current limit of
the device. For this reason, the most conservative approach is to specify an inductor with a saturation current
rating equal to or greater than the switch current limit rather than the peak inductor current.
Vinmax - Vout
Vout
Lo min =
´
Io ´ KIND
Vinmax ´ ƒsw
(28)
IRIPPLE =
IL(rms) =
VOUT ´
(Vin max
- VOUT )
Vin max ´ L O ´ fSW
(IO ) +
2
1 æ VOUT ´ (Vinmax - VOUT ) ö
´ç
÷
÷
12 çè
Vinmax ´ LO ´ fSW
ø
ILpeak = Iout +
(29)
2
(30)
Iripple
2
(31)
9.2.2.3 Output Capacitor
To select the value of the output capacitor, account for three primary considerations. The output capacitor
determines the modulator pole, the output voltage ripple, and how the regulators respond to a large change in
load current. The output capacitance must be selected based on the most stringent of these three criteria.
The first criterion is the desired response to a large change in the load current. The output capacitor needs to
supply the load with current when the regulator cannot. This situation would occur if there are desired hold-up
times for the regulator where the output capacitor must hold the output voltage above a certain level for a
specified amount of time after the input power is removed. Also, the regulator will temporarily not be able to
supply sufficient output current if there is a large, fast increase in the current needs of the load such as
transitioning from no load to a full load. The regulator usually needs two or more clock cycles for the control loop
to see the change in load current and output voltage and adjust the duty cycle to react to the change. The output
capacitor must be sized to supply the extra current to the load until the control loop responds to the load change.
The output capacitance must be large enough to supply the difference in current for 2 clock cycles while only
allowing a tolerable amount of droop in the output voltage. Equation 32 shows the minimum output capacitance
necessary to accomplish this.
Where ΔIout is the change in output current, ƒsw is the regulators switching frequency and ΔVout is the
allowable change in the output voltage. For this example, the transient load response is specified as a 4%
change in Vout for a load step from 0 A (no load) to 0.5 A (full load). For this example, ΔIout = 0.5 – 0 = 0.5 A
and ΔVout = 0.04 × 3.3 = 0.132 V. Using these numbers gives a minimum capacitance of 15.2 μF. This value
does not take the ESR of the output capacitor into account in the output voltage change. For ceramic capacitors,
the ESR is usually small enough to ignore in this calculation. Aluminum electrolytic and tantalum capacitors have
higher ESR that should be taken into account.
The catch diode of the regulator cannot sink current, so any stored energy in the inductor will produce an output
voltage overshoot when the load current rapidly decreases (see Figure 51). The output capacitor must also be
sized to absorb energy stored in the inductor when transitioning from a high load current to a lower load current.
The excess energy that gets stored in the output capacitor increases the voltage on the capacitor. The capacitor
must be sized to maintain the desired output voltage during these transient periods. Equation 33 is used to
calculate the minimum capacitance to keep the output voltage overshoot to a desired value. Where L is the value
of the inductor, IOH is the output current under heavy load, IOL is the output under light load, VF is the final peak
output voltage, and Vi is the initial capacitor voltage. For this example, the worst case load step is from 0.5 A to 0
A. The output voltage increases during this load transition and the stated maximum in our specification is 4% of
the output voltage. This makes Vf = 1.04 × 3.3 = 3.432. Vi is the initial capacitor voltage, which is the nominal
output voltage of 3.3 V. Using these numbers in Equation 33 yields a minimum capacitance of 13.2 μF.
Equation 34 calculates the minimum output capacitance needed to meet the output voltage ripple specification.
Where ƒsw is the switching frequency, Voripple is the maximum allowable output voltage ripple, and Iripple is the
inductor ripple current. Equation 34 yields 1 μF.
Equation 35 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple
specification. Equation 35 indicates the ESR should be less than 248 mΩ.
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The most stringent criterion for the output capacitor is 15.2 μF of capacitance to keep the output voltage in
regulation during a load transient.
Additional capacitance deratings for aging, temperature, and DC bias should be factored in which will increase
this minimum value. For this example, a 47-μF 10-V X5R ceramic capacitor with 5 mΩ of ESR is used.
Capacitors generally have limits to the amount of ripple current they can handle without failing or producing
excess heat. An output capacitor that can support the inductor ripple current must be specified. Some capacitor
data sheets specify the root mean square (RMS) value of the maximum ripple current. Equation 36 can be used
to calculate the RMS ripple current the output capacitor needs to support. For this application, Equation 36 yields
37.7 mA.
2 ´ DIout
Cout >
¦ sw ´ DVout
(32)
(Ioh
(V ¦
2
Cout > Lo ´
1
Cout >
8 ´ ¦ sw
´
)
- Vi )
- Iol2
2
2
(33)
1
VORIPPLE
IRIPPLE
(34)
V
RESR < ORIPPLE
IRIPPLE
Icorms =
(35)
Vout ´ (Vin max - Vout)
12 ´ Vin max ´ Lo ´ ¦ sw
(36)
9.2.2.4 Catch Diode
The TPS54060 requires an external catch diode between the PH pin and GND. The selected diode must have a
reverse voltage rating equal to or greater than Vinmax. The peak current rating of the diode must be greater than
the maximum inductor current. The diode should also have a low forward voltage. Schottky diodes are typically a
good choice for the catch diode due to their low forward voltage. The lower the forward voltage of the diode, the
higher the efficiency of the regulator.
Typically, the higher the voltage and current ratings the diode has, the higher the forward voltage is. Because the
design example has an input voltage up to 48 V, a diode with a minimum of 60-V reverse voltage is selected.
For the example design, the B160A Schottky diode is selected for its lower forward voltage and it comes in a
larger package size which has good thermal characteristics over small devices. The typical forward voltage of the
B160A is 0.5 V.
The diode must be selected with an appropriate power rating. The diode conducts the output current during the
off-time of the internal power switch. The off-time of the internal switch is a function of the maximum input
voltage, output voltage, and switching frequency. The output current during the off-time is multiplied by the
forward voltage of the diode which equals the conduction losses of the diode. At higher switch frequencies, the
AC losses of the diode need to be taken into account. The AC losses of the diode are due to the charging and
discharging of the junction capacitance and reverse recovery. Equation 37 is used to calculate the total power
dissipation, conduction losses plus AC losses, of the diode.
The B160A has a junction capacitance of 110 pF. Using Equation 37, the selected diode will dissipate 0.297 W.
This power dissipation, depending on mounting techniques, should produce a 5.9°C temperature rise in the diode
when the input voltage is 48 V and the load current is 0.5 A.
If the power supply spends a significant amount of time at light load currents or in sleep mode, consider using a
diode which has a low leakage current and slightly higher forward voltage drop.
2
Pd =
32
(Vin max - Vout) ´ Iout ´ Vƒd Cj ´ ƒsw ´ (Vin + Vƒd)
+
2
Vin max
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9.2.2.5 Input Capacitor
The TPS54060 requires a high-quality ceramic, type X5R or X7R, input decoupling capacitor of at least 3 μF of
effective capacitance, and in some applications, a bulk capacitance. The effective capacitance includes any DC
bias effects. The voltage rating of the input capacitor must be greater than the maximum input voltage. The
capacitor must also have a ripple current rating greater than the maximum input current ripple of the TPS54060.
The input ripple current can be calculated using Equation 38.
The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the
capacitor. The capacitance variations due to temperature can be minimized by selecting a dielectric material that
is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors
because they have a high capacitance to volume ratio and are fairly stable over temperature. The output
capacitor must also be selected with the DC bias taken into account. The capacitance value of a capacitor
decreases as the DC bias across a capacitor increases.
For this example design, a ceramic capacitor with at least a 60-V voltage rating is required to support the
maximum input voltage. Common standard ceramic capacitor voltage ratings include 4 V, 6.3 V, 10 V, 16 V, 25
V, 50 V, or 100 V, so a 100-V capacitor should be selected. For this example, two 2.2-μF, 100-V capacitors in
parallel are selected. Table 2 shows a selection of high-voltage capacitors. The input capacitance value
determines the input ripple voltage of the regulator. The input voltage ripple can be calculated using Equation 39.
Using the design example values, Ioutmax = 0.5 A, Cin = 4.4 μF, ƒsw = 500 kHz, yields an input voltage ripple of
57 mV and a rms input ripple current of 0.223 A.
Icirms = Iout ´
Vout
´
Vin min
(Vin min
- Vout )
Vin min
(38)
Iout max ´ 0.25
ΔVin =
Cin ´ ¦ sw
(39)
Table 2. Capacitor Types
VENDOR
VALUE (μF)
1.0 to 2.2
Murata
1.0 to 4.7
1.0
1.0 to 2.2
1.0 10 1.8
Vishay
1.0 to 1.2
1.0 to 3.9
1.0 to 1.8
1.0 to 2.2
TDK
1.5 to 6.8
1.0. to 2.2
1.0 to 3.3
1.0 to 4.7
AVX
1.0
1.0 to 4.7
1.0 to 2.2
EIA SIZE
1210
1206
2220
2225
1812
1210
1210
1812
VOLTAGE
DIELECTRIC
100 V
COMMENTS
GRM32 series
50 V
100 V
GRM31 series
50 V
50 V
100 V
VJ X7R series
50 V
100 V
100 V
50 V
100 V
50 V
X7R
C series C4532
C series C3225
50 V
100 V
50 V
X7R dielectric series
100 V
9.2.2.6 Slow Start Capacitor
The slow start capacitor determines the minimum amount of time it takes for the output voltage to reach its
nominal programmed value during power up. This is useful if a load requires a controlled voltage slew rate. This
is also used if the output capacitance is large and would require large amounts of current to quickly charge the
capacitor to the output voltage level. The large currents necessary to charge the capacitor may make the
TPS54060 reach the current limit or excessive current draw from the input power supply may cause the input
voltage rail to sag. Limiting the output voltage slew rate solves both of these problems.
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The slow start time must be long enough to allow the regulator to charge the output capacitor up to the output
voltage without drawing excessive current. Equation 40 can be used to find the minimum slow start time, tss,
necessary to charge the output capacitor, Cout, from 10% to 90% of the output voltage, Vout, with an average
slow start current of Issavg. In the example, to charge the 47-μF output capacitor up to 3.3 V while only allowing
the average input current to be 0.125 A would require a 1-ms slow start time.
After the slow start time is known, the slow start capacitor value can be calculated using Equation 6. For the
example circuit, the slow start time is not too critical because the output capacitor value is 47 μF which does not
require much current to charge to 3.3 V. The example circuit has the slow start time set to an arbitrary value of
3.2 ms, which requires a 0.01-μF capacitor.
Cout ´ Vout ´ 0.8
tss >
Issavg
(40)
9.2.2.7 Bootstrap Capacitor Selection
A 0.1-μF ceramic capacitor must be connected between the BOOT and PH pins for proper operation. TI
recommends to use a ceramic capacitor with X5R or better grade dielectric. The capacitor should have a 10 V or
higher voltage rating.
9.2.2.8 UVLO Set Point
The UVLO can be adjusted using an external voltage divider on the EN pin of the TPS54060. The UVLO has two
thresholds, one for power up when the input voltage is rising and one for power down or brown outs when the
input voltage is falling. For the example design, the supply should turn on and start switching after the input
voltage increases above 8.9 V (enabled). After the regulator starts switching, it should continue to do so until the
input voltage falls below 7.9 V (UVLO stop).
The programmable UVLO and enable voltages are set using a resistor divider between Vin and ground to the EN
pin. Equation 2 through Equation 3 can be used to calculate the resistance values necessary. For the example
application, a 332-kΩ resistor between Vin and EN and a 56.2-kΩ resistor between EN and ground are required
to produce the 8.9- and 7.9-V start and stop voltages.
9.2.2.9 Output Voltage and Feedback Resistors Selection
For the example design, 10 kΩ was selected for R2. Using Equation 1, R1 is calculated as 31.25 kΩ. The
nearest standard 1% resistor is 31.6 kΩ. Due to current leakage of the VSENSE pin, the current flowing through
the feedback network should be greater than 1 μA to maintain the output voltage accuracy. This requirement
makes the maximum value of R2 equal to 800 kΩ. Using higher resistor values decreases quiescent current and
improves efficiency at low output currents, but may introduce noise immunity problems.
9.2.2.10 Compensation
There are several methods used to compensate DC/DC regulators. The method presented here is easy to
calculate and ignores the effects of the slope compensation that is internal to the device. Because the slope
compensation is ignored, the actual crossover frequency is usually lower than the crossover frequency used in
the calculations. This method assumes the crossover frequency is between the modulator pole and the ESR zero
and the ESR zero is at least 10 times greater the modulator pole. Use SwitcherPro software for a more accurate
design.
To get started, the modulator pole, ƒpmod, and the ESR zero, ƒz1 must be calculated using Equation 41 and
Equation 42. For Cout, use a derated value of 40 μf. Use equations Equation 43 and Equation 44, to estimate a
starting point for the crossover frequency, ƒco, to design the compensation. For the example design, ƒpmod is
603 Hz and ƒzmod is 796 kHz. Equation 43 is the geometric mean of the modulator pole and the ESR zero, and
Equation 44 is the mean of modulator pole and the switching frequency. Equation 43 yields 21.9 kHz and
Equation 44 gives 12.3 kHz. Use the lower value of Equation 43 or Equation 44 for an initial crossover frequency.
For this example, ƒco is 12.3 kHz. Next, the compensation components are calculated. A resistor in series with a
capacitor is used to create a compensating zero. A capacitor in parallel to these two components forms the
compensating pole.
Ioutmax
¦p mod =
2 × p × Vout × Cout
(41)
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¦ z mod =
1
2 ´ p ´ Resr × Cout
(42)
fco =
f p mod ´ f z mod
(43)
fco =
f
f p mod ´ sw
2
(44)
To determine the compensation resistor, R4, use Equation 45. Assume the power stage transconductance,
gmps, is 1.9 A/V. The output voltage, Vo, reference voltage, VREF, and amplifier transconductance, gmea, are 3.3
V, 0.8 V, and 92 μA/V, respectively. R4 is calculated to be 72.6 kΩ, use the nearest standard value of 73.2 kΩ.
Use Equation 46 to set the compensation zero to the modulator pole frequency. Equation 46 yields 3600 pF for
compensating capacitor C7, a 3300 pF is used on the board.
ö
æ 2 ´ p ´ fco ´ Cout ö æ
Vout
R4 = ç
÷
÷´ç
gmps
è
ø è Vref ´ gmea ø
(45)
1
C7 =
2 ´ p ´ R4 ´ f p m od
(46)
Use the larger value of Equation 47 and Equation 48 to calculate the C8, to set the compensation pole.
Equation 48 yields 8.7 pF so the nearest standard of 10 pF is used.
C ´ Re sr
C8 = o
R4
(47)
C8 =
1
R4 ´ f sw ´ p
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9.2.3 Application Curves
VIN = 20 V/div (AC Coupled)
VOUT = 1 V/div
IOUT = 200 mA/div (0.125 to 0.375 A Step)
VIN = 20 V/div
Time = 5 ms/div
Time = 5 ms/div
Time = 2 ms/div
Time = 2 ms/div
Figure 51. Load Transient
Figure 52. Startup With VIN
VOUT = 10 mV/div (AC Coupled)
VOUT = 10 mV/div (AC Coupled)
PH = 20 V/div
PH = 20 V/div
Inductor Current = 100 mA/div
Time = 1 μs/div
Time = 1 µs/div
Time = 5 μs/div
Time = 5 µs/div
Figure 53. Output Ripple CCM
VOUT = 10 mV/div (AC Coupled)
Figure 54. Output Ripple, DCM
VIN = 20 mV/div (AC Coupled)
PH = 20 V/div
PH = 20 V/div
Time = 50 μs/div
Time = 50 µs/div
Figure 55. Output Ripple, PSM
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Time = 1 μs/div
Time = 1 µs/div
Figure 56. Input Ripple CCM
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SLVSCF8 – JULY 2014
100
VIN = 20 V/div (AC Coupled)
90
80
Efficiency (%)
70
PH = 20 V/div
VIN = 12 V
60
VIN = 24 V
VIN = 18 V
VIN = 34 V
VIN = 42 V
50
40
30
Inductor Current = 100 mA/div
20
10
0
0
Time = 5 μs/div
Time = 5 µs/div
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
Output Current (A)
C028
VOUT = 3.3 V
Figure 58. Efficiency vs Load Current
Figure 57. Input Ripple DCM
100
60
90
100
Phase
20
Gain (dB)
60
VIN = 12 V
50
VIN = 24 V
VIN = 18 V
VIN = 34 V
40
0
0
Gain
–50
–20
VIN = 42 V
30
50
Phase (o)
70
Efficiency (%)
150
40
80
–100
20
–40
–150
10
0
0
0.02
0.04
0.06
Output Current (A)
–60
100
0.10
0.08
1k
C029
10k
Frequency (Hz)
100k
1M
C030
VOUT = 3.3 V
Figure 60. Overall Loop Frequency Response
0.1
0.1
0.08
0.08
0.06
0.06
0.04
0.04
Regulation (%)
Regulation (%)
Figure 59. Light Load Efficiency
0.02
0
–0.02
0.02
0
–0.02
–0.04
–0.04
–0.06
–0.06
–0.08
–0.08
–0.1
0.00 0.25
0.1 0.15 0.2 0.25 0.3
Load Current (A)
0.35 0.4
0.45 0.5
VI = 34 V
Figure 61. Regulation vs Load Current
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–0.1
10
15
20
C031
25
30
35
40
Input Voltage (V)
45
50
55
60
C032
IO = 0.25 A
Figure 62. Regulation vs Input Voltage
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10 Power Supply Recommendations
10.1 Power Dissipation Estimate
The following formulas show how to estimate the IC power dissipation under CCM operation. Do not use these
equations if the device is working in DCM.
The power dissipation of the IC includes conduction loss (Pcon), switching loss (Psw), gate drive loss (Pgd), and
supply current (Pq).
Vout
Pcon = Io2 ´ RDS(on) ´
Vin
(49)
Psw = Vin 2 ´ ¦ sw ´ lo ´ 0.25 ´ 10-9
Pgd = Vin ´ 3 ´ 10
Pq = 116 ´ 10
-6
-9
´ ¦ sw
´ Vin
(50)
(51)
(52)
where:
• IOUT is the output current (A).
• RDS(on) is the on-resistance of the high-side MOSFET (Ω).
• VOUT is the output voltage (V).
• VIN is the input voltage (V).
• ƒsw is the switching frequency (Hz).
So
Ptot = Pcon + Psw + Pgd + Pq
(53)
For given TA,
TJ = TA + Rth ´ Ptot
(54)
For given TJMAX = 150°C
TAmax = TJmax - Rth ´ Ptot
(55)
where
• Ptot is the total device power dissipation (W).
• TA is the ambient temperature (°C).
• TJ is the junction temperature (°C).
• Rth is the thermal resistance of the package (°C/W).
• TJMAX is maximum junction temperature (°C).
• TAMAX is maximum ambient temperature (°C).
There will be additional power losses in the regulator circuit due to the inductor AC and DC losses, catch diode,
and trace resistance that will impact the overall efficiency of the regulator.
10.2 Power Supply Considerations
TPS2105-EP requires a high-quality ceramic, type X5R or X7R, input decoupling capacitor. The value of a
ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the capacitor. The
capacitance variations due to temperature can be minimized by selecting a dielectric material that is stable over
temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors because they
have a high capacitance to volume ratio and are fairly stable over temperature. The output capacitor must also
be selected with the DC bias taken into account. Ceramic capacitors lose capacitance when a DC bias is applied
across the capacitor. This capacitance loss is due to the polarization of the ceramic material. The capacitance
loss is not permanent; after a large DC bias is applied, reducing the DC bias reduces the degree of polarization
and capacitance increases. The capacitance value of a capacitor decreases as the DC bias across a capacitor
increases.
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Power Supply Considerations (continued)
All tantalum capacitors have Tantalum (Ta) particles sintered together to form an anode. The cathode material
can either be the traditional MnO2 or a conductive polymer. Because MnO2 is actually a semiconductor, it has a
very-high amount of resistance associated with it. A characteristic of this material is that as temperature changes
so does its conductivity. So MnO2-based Tantalum capacitors have relatively high ESR and that ESR shifts
significantly across the operational temperature range.
However, polymer-based cathodes use a highly-conductive polymer material. Because the material is inherently
conductive, Tantalum-polymers have a relatively low ESR compared to their MnO2 counterparts in the same
voltage and capacitance ranges.
All Tantalum capacitors have a voltage derating factor associated with them. Because the Polymer material puts
less stress on the Tantalum-Pentoxide dielectric during reflow soldering, more voltage can be applied compared
to a MnO2-based Tantalum. For polymer-based capacitors, TI recommends 20% derating whereas the MnO2based tantalum capacitors require 50% or higher derating. Refer to the capacitor vendor data sheet for more
details regarding the derating guidelines.
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11 Layout
11.1 Layout Guidelines
Layout is a critical portion of good power supply design. There are several signals paths that conduct fast
changing currents or voltages that can interact with stray inductance or parasitic capacitance to generate noise
or degrade the power supplies performance. To help eliminate these problems, the VIN pin should be bypassed
to ground with a low-ESR ceramic bypass capacitor with X5R or X7R dielectric. Take care to minimize the loop
area formed by the bypass capacitor connections, the VIN pin, and the anode of the catch diode. See Layout
Example for a PCB layout example. The GND pin should be tied directly to the power pad under the IC and the
power pad.
The power pad should be connected to any internal PCB ground planes using multiple vias directly under the IC.
The PH pin should be routed to the cathode of the catch diode and to the output inductor. Because the PH
connection is the switching node, the catch diode and output inductor should be located close to the PH pins,
and the area of the PCB conductor minimized to prevent excessive capacitive coupling. For operation at full rated
load, the top side ground area must provide adequate heat dissipating area. The RT/CLK pin is sensitive to noise
so the RT resistor should be located as close as possible to the IC and routed with minimal lengths of trace. The
additional external components can be placed approximately as shown. It may be possible to obtain acceptable
performance with alternate PCB layouts; however, this layout has been shown to produce good results and is
meant as a guideline.
11.1.1 Estimated Circuit Area
The estimated printed circuit board area for the components used in the design of Figure 50 is 0.55 inch2. This
area does not include test points or connectors.
VIN
+
Cin
Cboot
Lo
BOOT
VIN
Cd
PH
GND
R1
+
GND
R2
TPS54060
Co
VOUT
VSENSE
EN
COMP
SS/TR
Rcomp
RT/CLK
Css
RT
Czero
Cpole
Figure 63. Inverting Power Supply from the SLVA317 Application Note
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Layout Guidelines (continued)
VOPOS
+
VIN
Copos
+
Cin
Cboot
GND
PH
BOOT
VIN
Lo
Cd
R1
GND
+
Coneg
R2
TPS54060
VONEG
VSENSE
EN
COMP
SS/TR
Rcomp
RT/CLK
Css
Czero
RT
Cpole
Figure 64. Split Rail Power Supply Based on the SLVA369 Application Note
11.2 Layout Example
Vout
Output
Capacitor
Topside
Ground
Area
Output
Inductor
Route Boot Capacitor
Trace on another layer to
provide wide path for
topside ground
Input
Bypass
Capacitor
Vin
UVLO
Adjust
Resistors
Slow Start
Capacitor
BOOT
Catch
Diode
PH
VIN
GND
EN
COMP
SS/TR
VSENSE
RT/CLK
PWRGD
Frequency
Set Resistor
Compensation
Network
Resistor
Divider
Thermal VIA
Signal VIA
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.2 Trademarks
Eco-Mode, PowerPAD, SwitcherPro are trademarks of Texas Instruments.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS54060MDGQTEP
ACTIVE
HVSSOP
DGQ
10
250
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-55 to 125
546M
V62/14617-01XE
ACTIVE
HVSSOP
DGQ
10
250
RoHS & Green
NIPDAUAG
Level-2-260C-1 YEAR
-55 to 125
546M
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of