TPS54372PWP

Typical Size 6,4 mm X 6,6 mm www.ti.com TPS54372 SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 3-A OUTPUT TRACKING/TERMINATION SYNCHRONOUS PWM SWITCHER WITH INTEGRATED FETs (SWIFT™) FEATURES • • • • • • DESCRIPTION Tracks Externally Applied Reference Voltage 60-mΩ MOSFET Switches for High Efficiency at 3-A Continuous Output Source or Sink Current 6% to 90% VI Output Tracking Range Wide PWM Frequency: Fixed 350 kHz or Adjustable 280 kHz to 700 kHz Load Protected by Peak Current Limit and Thermal Shutdown Integrated Solution Reduces Board Area and Total Cost APPLICATIONS • • • • DDR Memory Termination Voltage Active Termination of GTL and SSTL High-Speed Logic Families DAC Controlled, High-Current Output Stage Precision Point-of-Load Power Supply As a member of the SWIFT™ family of dc/dc regulators, the TPS54372 low-input voltage, high-output current, synchronous-buck PWM converter integrates all required active components. Included on the substrate with the listed features are a true, high performance, voltage error amplifier that enables maximum performance under transient conditions and flexibility in choosing the output filter L and C components; an undervoltage-lockout circuit to prevent start-up until the input voltage reaches 3 V; an internally and externally set slow-start circuit to limit in-rush currents; and a status output to indicate valid operating conditions. The TPS54372 is available in a thermally enhanced 20-pin TSSOP (PWP) PowerPAD™ package, which eliminates bulky heatsinks. TI provides evaluation modules and the SWIFT™ designer software tool to aid in quickly achieving high-performance power supply designs to meet aggressive equipment development cycles. SIMPLIFIED SCHEMATIC TRANSIENT RESPONSE VIN PH TPS54372 BOOT PGND REFIN VTTQ COMP VBIAS AGND VSENSE VI = 5 V, VO = 1.25 V 0 A to 2.25 A Compensation Network I O − Output Current − 1 A/div VDDQ VO − Output Voltage − 50 mV/div SIMPLIFIED SCHEMATIC Input t − Time − 25 ms/div Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. SWIFT, PowerPAD are trademarks of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2002–2005, Texas Instruments Incorporated TPS54372 www.ti.com SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION (1) (1) (2) TA REFIN VOLTAGE PACKAGE PART NUMBER (2) -40°C to 85°C 0.2 V to 1.75 V Plastic HTSSOP (PWP) TPS54372PWP For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. The PWP package is also available taped and reeled. Add an R suffix to the device type (i.e., TPS54372PWPR). See the application section of the data sheet for PowerPAD drawing and layout information. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted (1) TPS54372 Input voltage range, VI Output voltage range, VO Source current, IO Sink current, IS VIN, ENA –0.3 to 7 RT –0.3 to 6 VSENSE, REFIN –0.3 to 4 BOOT –0.3 to 17 VBIAS, COMP, STATUS –0.3 to 7 PH –0.6 to 6 PH UNITS V V Internally limited COMP, VBIAS 6 mA PH 6 A COMP 6 ENA, STATUS 10 mA ±0.3 V Operating virtual junction temperature range, TJ –40 to 125 °C Storage temperature, Tstg –65 to 150 °C 300 °C Voltage differential AGND to PGND Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (1) Stresses beyond those listed under "absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS MIN Input voltage, VI Operating junction temperature, TJ 2 NOM MAX UNIT 3 6 V –40 125 °C TPS54372 www.ti.com SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 DISSIPATION RATINGS PACKAGE (1) (2) THERMAL IMPEDANCE JUNCTION-TO-AMBIENT 20-Pin PWP with solder 26.0°C/W 20-Pin PWP without solder 57.5°C/W (1) (2) (3) TA = 25°C POWER RATING 3.85 W TA = 70°C POWER RATING (3) 1.73 W TA = 85°C POWER RATING 2.11 W 1.54 W 0.96 W 0.69 W For more information on the PWP package, see TI technical brief, literature number SLMA002. Test board conditions: a. 3-inch x 3-inch, 4 layers, thickness: 0.062-inch b. 1.5-oz. copper traces located on the top of the PCB c. 1.5-oz. copper ground plane on the bottom of the PCB d. Ten thermal vias (see Recommended Land Pattern in applications section of this data sheet) Maximum power dissipation may be limited by overcurrent protection. ELECTRICAL CHARACTERISTICS TJ = –40°C to 125°C, VI = 3 V to 6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE, VIN VIN I(Q) Input voltage range 3.0 Quiescent current 6.0 fs = 350 kHz, RT open, PH pin open 6.2 9.60 fs = 500 kHz, RT = 100 kΩ, PH pin open 8.4 12.8 1 1.4 2.95 3.0 Shutdown, ENA = 0 V V mA UNDERVOLTAGE LOCKOUT Start threshold voltage, UVLO Stop threshold voltage, UVLO Hysteresis voltage, UVLO Rising and falling edge deglitch, UVLO V 2.70 2.80 0.14 0.16 V 2.5 µs (1) V BIAS VOLTAGE Output voltage, VBIAS Output current, VBIAS I(VBIAS) = 0 2.70 2.80 (2) 2.90 V 100 µA REGULATION Line regulation (1) (3) Load regulation (1) (3) IL = 1.5 A, fs = 350 kHz, TJ = 85°C 0.07 %/V IL = 0 A to 3 A, fs = 350 kHz, TJ = 85°C 0.03 %/A OSCILLATOR Internally set free-running frequency RT open RT = 180 kΩ (1% resistor to Externally set free-running frequency range AGND) (1) 280 350 420 252 280 308 RT = 100 kΩ (1% resistor to AGND) 460 500 540 RT = 68 kΩ (1% resistor to AGND) (1) 663 700 762 Ramp valley (1) 0.75 Ramp amplitude (peak-to-peak) (1) V 200 Maximum duty cycle (1) kHz V 1 Minimum controllable on time (1) kHz ns 90% ERROR AMPLIFIER Error amplifier open-loop voltage gain 1 kΩ COMP to AGND (1) 90 110 Error amplifier unity gain bandwidth Parallel 10 kΩ, 160 pF COMP to AGND (1) 3 5 Error amplifier common mode input voltage range Powered by internal LDO (1) 0 Input bias current, VSENSE VSENSE = Vref Output voltage slew rate (symmetric), COMP (1) (1) (2) (3) 60 1.0 1.4 dB MHz VBIAS V 250 nA V/µs Specified by design Static resistive loads only Specified by the circuit used in Figure 8 3 TPS54372 www.ti.com SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 ELECTRICAL CHARACTERISTICS (continued) TJ = –40°C to 125°C, VI = 3 V to 6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT PWM COMPARATOR PWM comparator propagation delay time, PWM comparator input to PH pin (excluding dead time) 10-mV overdrive (1) 70 85 ns 1.20 1.40 V SLOW-START/ENABLE Enable threshold voltage, ENA Enable hysteresis voltage, 0.82 ENA (1) Falling edge deglitch, ENA (1) Internal slow-start time 2.6 0.03 V 2.5 µs 3.35 4.1 ms 0.18 0.30 V 1 µA STATUS Output saturation voltage, STATUS Isink = 2.5 mA Leakage current, STATUS VI= 3.6 V CURRENT LIMIT Current limit VI = 3 V (1) 4 6.5 (1) 4.5 7.5 VI= 6 V Current limit leading edge blanking time (1) Current limit total response time (4) A 100 ns 200 ns THERMAL SHUTDOWN Thermal shutdown trip point (4) Thermal shutdown 135 hysteresis (4) 150 165 °C °C 10 OUTPUT POWER MOSFETs rDS(on) (4) (5) 4 Power MOSFET switches VI = 6 V (5) 59 88 V (5) 85 136 VI = 3 Specified by design Matched MOSFETs low-side rDS(on), and high-side rDS(on) production tested. mΩ TPS54372 www.ti.com SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 HTTSOP PowerPAD (TOP VIEW) AGND VSENSE COMP STATUS BOOT PH PH PH PH PH 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 RT ENA REFIN VBIAS VIN VIN VIN PGND PGND PGND Terminal Functions TERMINAL DESCRIPTION NAME NO. AGND 1 Analog ground. Return for compensation network/output divider, slow-start capacitor, VBIAS capacitor, and RT resistor. Connect PowerPAD connection to AGND. BOOT 5 Bootstrap output. 0.022-µF to 0.1-µF low-ESR capacitor connected from BOOT to PH generates floating drive for the high-side FET driver. COMP 3 Error amplifier output. Connect frequency compensation network from COMP to VSENSE ENA 19 Enable input. Logic high enables oscillator, PWM control and MOSFET driver circuits. Logic low disables operation and places device in a low quiescent current state. PGND 11-13 Power ground. High current return for the low-side driver and power MOSFET. Connect PGND with large copper areas to the input and output supply returns, and negative terminals of the input and output capacitors. A single-point connection to AGND is recommended. PH 6-10 Phase input/output. Junction of the internal high-side and low-side power MOSFETs, and output inductor. RT 20 Frequency setting resistor input. Connect a resistor from RT to AGND to set the switching frequency, fs. REFIN 18 External reference input. High impedance input to slow-start and error amplifier circuits. STATUS 4 Open-drain output. Asserted low when VIN < UVLO, VBIAS and internal reference are not settled or the internal shutdown signal is active. Otherwise STATUS is high. VBIAS 17 Internal bias regulator output. Supplies regulated voltage to internal circuitry. Bypass VBIAS pin to AGND pin with a high quality, low-ESR 0.1-µF to 1.0-µF ceramic capacitor. VIN VSENSE 14-16 2 Input supply for the power MOSFET switches and internal bias regulator. Bypass VIN pins to PGND pins close to device package with a high-quality, low-ESR 10-µF ceramic capacitor. Error amplifier inverting input. Connect to output voltage compensation network/output divider. 5 TPS54372 www.ti.com SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 INTERNAL BLOCK DIAGRAM VBIAS AGND Enable Comparator Falling Edge Deglitch ENA 1.2 V Hysteresis: 0.03 V 2.5 µs VIN UVLO Comparator 2.95 V Hysteresis: 0.16 V VDDQ VIN ILIM Comparator Thermal Shutdown 150°C VIN Leading Edge Blanking Falling and Rising Edge Deglitch VIN REG VBIAS SHUTDOWN 100 ns BOOT 30 mΩ 2.5 µs SS_DIS SHUTDOWN PH REFIN Slow-start (0.25 V/ms minimum) + − R Q Error Amplifier S PWM Comparator LOUT CO Adaptive Dead-Time and Control Logic VIN 30 mΩ PGND OSC TPS54672 STATUS SS_DIS VSENSE 6 COMP RT Vtt TPS54372 www.ti.com SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 TYPICAL CHARACTERISTICS VIN = 3.3 V IO = 3 A 80 60 40 20 0 25 85 TJ − Junction Temperature − °C VIN = 5 V IO = 3 A 80 70 60 50 40 30 20 10 0 −40 125 0 25 85 125 750 650 550 450 RT = Open 350 250 −40 0 25 85 125 TJ − Junction Temperature − °C TJ − Junction Temperature − °C Figure 1. Figure 2. Figure 3. EXTERNALLY SET OCILLATOR FREQUENCY vs JUNCTION TEMPERATURE DEVICE POWER LOSSES vs LOAD CURRENT INTERNAL SLOW-START TIME vs JUNCTION TEMPERATURE 3.80 2.25 TJ − 125°C fs = 700 kHz 2 Device Power Losses − W 700 RT = 68 kΩ 600 500 RT = 100 kΩ 400 300 Internal Slow-Start Time − ms 800 1.75 1.5 VI = 3.3 V 1.25 1 VI = 5 V 0.75 0.5 0.25 RT = 180 kΩ 25 85 0 125 3.50 3.35 3.20 3.05 2.90 2.75 0 0 3.65 1 2 3 IL − Load Current − A TJ − Junction Temperature − °C Figure 4. 4 −40 0 25 85 125 TJ − Junction Temperature − °C Figure 5. Figure 6. ERROR AMPLIFIER OPEN-LOOP RESPONSE 0 140 RL = 10 kΩ, CL = 160 pF, TA = 25°C 120 100 −20 −40 −60 80 Phase −80 −100 60 −120 40 Gain 20 −140 Phase − Degrees 200 −40 f − Internally Set Oscillator Frequency − kHz Drain Source On-State Reststance − m Ω 100 INTERNALLY SET OCILLATOR FREQUENCY vs JUNCTION TEMPERATURE 90 120 0 −40 f − Externally Set Oscillator Frequency − kHz DRAIN-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE Gain − dB Drain Source On-State Reststance − m Ω DRAIN-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE −160 0 −180 −20 1 10 100 −200 1 k 10 k 100 k 1 M 10 M f − Frequency − Hz Figure 7. 7 TPS54372 www.ti.com SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 APPLICATION INFORMATION TP2 VI J1 2 1 GND TP9 TP3 C4 10 µF TP1 1 2 3 R2 36.5 kΩ 4 C2 470 pF 5 6 C6 0.047 pF C1 12 pF 7 8 9 10 R1 10 kΩ AGND RT J2 VDDQ 2 20 R6 10 kΩ VSENSE ENA 19 18 REFIN COMP 17 STATUS VBIAS 16 VIN BOOT 15 VIN PH 14 VIN PH 13 PH PGND 12 PGND PH 11 PGND PH PwrPAD R7 10 kΩ C9 1 µF R5 71.5 kΩ GND C13 0.1 µF C12 0.1 µF TP8 C8 10 µF 21 R3 1.21 kΩ C3 1500 pF 1 U1 TPS54372PWP TP4 TP5 1 2 L1 1 µH R4 2.4 Ω 1 2 + C7 150 µF + C10 150 µF C5 3300 pF C11 1 µF J2 VTTQ GND TP7 TP6 Figure 8. Application Circuit TYPICAL CIRCUIT INPUT VOLTAGE Figure 8 shows the schematic diagram for a typical TPS54372 application. The TPS54372 (U1) can provide up to 3 A of output current at a nominal output voltage of one half of VDDQ (typically 1.25 V). For proper operation, the PowerPAD underneath the integrated circuit TPS54372 is soldered directly to the printed-circuit board. The input voltage is a nominal 3.3 or 5.0 Vdc. The input filter (C4) is a 10-µF ceramic capacitor (Taiyo Yuden). Capacitor C8, a 10-µF ceramic capacitor (Taiyo Yuden) that provides high-frequency decoupling of the TPS54372 from the input supply, must be located as close as possible to the device. Ripple current is carried in both C4 and C8, and the return path to PGND should avoid the current circulating in the output capacitors C7, C10, and C11. COMPONENT SELECTION The values for the components used in this design example were selected for good transient response and small PCB area. Special polymer capacitors are used in the output filter circuit. A small size, small value output inductor is also used. Compensation network components are chosen to maximize closed-loop bandwidth and provide good transient response characteristics. Additional design information is available at www.ti.com. 8 FEEDBACK CIRCUIT The values for these components are selected to provide fast transient response times. Components R1, R2, R3, C1, C2, and C3 form the loop compensation network for the circuit. For this design, a Type-3 topology is used. The transfer function of the feedback network is chosen to provide maximum closed-loop gain available with open-loop characteristics of the internal error amplifier. Closed-loop crossover frequency is typically between 80 kHz and 125 kHz for input from 3 V to 6 V. TPS54372 www.ti.com OPERATING FREQUENCY In the application circuit, RT is grounded through a 71.5-kΩ resistor to select the operating frequency of 700 kHz. To set a different frequency, place a 68-kΩ to 180-kΩ resistor between RT (pin 20) and analog ground or leave RT floating to select the default of 350 kHz. The resistance can be approximated using the following equation: 500 kHz R
100 [k
] Switching Frequency OUTPUT FILTER The output filter is composed of a 1.0-µH inductor and two 150-µF capacitors. The inductor is a low dc resistance (0.010 Ω) type, Vishay IHLP-2525CZ-01 1.0-µH, 8.5-A rated dc output. The capacitors used are 150-µF, 6.3-V special polymer types. PCB LAYOUT Figure 9 shows a generalized PCB layout guide for the TPS54372. The VIN pins should be connected together on the printed-circuit board (PCB) and bypassed with a low-ESR ceramic bypass capacitor. Care should be taken to minimize the loop area formed by the bypass capacitor connections, the VIN pins, and the TPS54372 ground pins. The minimum recommended bypass capacitance is 10-µF ceramic with a X5R- or X7R-grade dielectric, and the optimum placement is closest to the VIN pins and the PGND pins. The TPS54372 has two internal grounds (analog and power). Inside the TPS54372, the analog ground ties to all of the noise-sensitive signals, while the power ground ties to the noisier power signals. Noise injected between the two grounds can degrade the performance of the TPS54372, particularly at higher output currents. Ground noise on an analog ground plane can also cause problems with some of the control and bias signals. For these reasons, separate analog and power ground traces are recommended. There should be an area of ground on the top layer directly under the IC, with an exposed area for connection to the PowerPAD. Use vias to connect this ground area to any internal ground planes. Use additional vias at the ground side of the input and output filter capacitors as well. The AGND and PGND pins should be tied to the PCB ground by connecting them to the ground area under the device as shown. The only components that should tie directly to the power ground plane are the input capacitors, the output capacitors, the input voltage decoupling capacitor, and the PGND pins of the TPS54372. Use a SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 separate wide trace for the analog ground signal path. This analog ground should be used for the voltage set-point divider, timing resistor RT, and bias capacitor grounds. Connect this trace directly to AGND (pin 1). The PH pins should be tied together and routed to the output inductor. Because the PH connection is the switching node, the inductor should be located close to the PH pins, and the area of the PCB conductor minimized to prevent excessive capacitive coupling. Connect the boot capacitor between the phase node and the BOOT pin as shown. Keep the boot capacitor close to the IC and minimize the conductor trace lengths. Connect the output filter capacitor(s) as shown, between the VOUT trace and PGND. It is important to keep the loop formed by the PH pins, Lout, Cout, and PGND as small as practical. Place the compensation components from the VOUT trace to the VSENSE and COMP pins. Do not place these components too close to the PH trace. Due to the size of the IC package and the device pinout, they have to be routed somewhat close, but maintain as much separation as possible while still keeping the layout compact. Connect the bias capacitor from the VBIAS pin to analog ground using the isolated analog ground trace. If an RT resistor is used, connect it to this trace as well. LAYOUT CONSIDERATIONS FOR THERMAL PERFORMANCE For operation at full rated load current, the analog ground plane must provide adequate heat dissipating area. A 3-inch by 3-inch plane of 1-ounce copper is recommended, though not mandatory, depending on ambient temperature and airflow. Most applications have larger areas of internal ground plane available, and the PowerPAD should be connected to the largest area available. Additional areas on the top or bottom layers also help dissipate heat, and any area available should be used when 3-A or greater operation is desired. Connection from the exposed area of the PowerPAD to the analog ground plane layer should be made using 0.013-inch diameter vias to avoid solder wicking through the vias. Six vias should be in the PowerPAD area with four additional vias located under the device package. The size of the vias under the package, but not in the exposed thermal pad area, can be increased to 0.018 inch. Additional vias beyond the ten recommended that enhance thermal performance should be included in areas not under the device package. 9 TPS54372 www.ti.com SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 ANALOG GROUND TRACE AGND RT COMPENSATION NETWORK TRACKING VOLTAGE ENA VSENSE COMP RESISTOR DIVIDER NETWORK REFIN BIAS CAPACITOR PWRGD BOOT CAPACITOR VBIAS EXPOSED VIN BOOT PH VOUT OUTPUT INDUCTOR PH POWERPAD AREA Vin VIN PH VIN PH PGND PH PGND PH PGND INPUT BYPASS CAPACITOR OUTPUT FILTER CAPACITOR INPUT BULK FILTER TOPSIDE GROUND AREA VIA to Ground Plane Figure 9. PCB Layout for 20-Pin PWP PowerPAD PERFORMANCE GRAPHS EFFICIENCY vs OUTPUT CURRENT LOAD REGULATION vs OUTPUT CURRENT 1.255 100 fs = 700 kHz, TA = 25°C, VI = 5 V, VO = 1.25 V 95 1.253 85 Load Regulation Efficiency − % 90 80 75 70 65 60 fs = 700 kHz, VI = 5 V, VO = 1.25 V 55 1 2 3 IO − Output Current − A Figure 10. 10 1.249 1.247 50 0 1.251 4 1.245 0 1 2 3 IO − Output Current − A Figure 11. 4 TPS54372 www.ti.com SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 PERFORMANCE GRAPHS (continued) LINE REGULATION vs INPUT VOLTAGE OUTPUT RIPPLE VOLTAGE 1.253 Line Regulation IO = 1.5 A 1.251 1.25 IO = 3 A 1.249 fs = 700 kHz, TA = 25°C, VO = 1.25 V 1.248 fs = 700 kHz, IO = 3 A, VI = 5 V, VO = 1.25 V Output Ripple Voltage − 10 mV/div IO = 0 A 1.252 1.247 4 5 VI − Input Voltage − V t − Time − 1 µs/div 6 Figure 13. TRANSIENT RESPONSE SLOW-START TIMING VI = 5 V, VO = 1.25 V 0 A to 2.25 A VI = 5 V, VO = 1.25 V VO − Output Voltage − 500 mV/div VI − Input Voltage − 2 V/div Figure 12. I O − Output Current − 1 A/div VO − Output Voltage − 50 mV/div 3 t −Time − 2.5 ms/div Figure 14. Figure 15. SOURCE-SINK TRANSIENT RESPONSE AMBIENT TEMPERATURE vs LOAD CURRENT(1) 125 VI = 5 V, VO = 1.25 V −1.5 A to 1.5 A T A − Ambient Temperature − ° C 115 I O − Output Current − 1 A/div VO − Output Voltage − 50 mV/div t − Time − 25 ms/div VI = 5 V 105 95 85 VI = 3.3 V 75 65 Safe Operating Area (See Note) 55 45 TA = 25°C, VO = 1.25 V 35 25 t − Time − 100 µs/div Figure 16. 0 (1) 1 2 3 IL − Load Current − A 4 Safe operating area is applicable to the test board conditions listed in the dissipation rating table section of this data sheet. Figure 17. 11 TPS54372 www.ti.com SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 DETAILED DESCRIPTION UNDERVOLTAGE LOCKOUT (UVLO) VOLTAGE REFERENCE The TPS54372 incorporates an undervoltage lockout circuit to keep the device disabled when the input voltage (VIN) is insufficient. During power up, internal circuits are held inactive until VIN exceeds the nominal UVLO threshold voltage of 2.95 V. Once the UVLO start threshold is reached, device start-up begins. The device operates until VIN falls below the nominal UVLO comparator. Hysteresis in the UVLO comparator, and a 2.5-µs rising and falling edge deglitch circuit reduce the likelihood of shutting the device down due to noise on VIN. The REFIN pin provides an input for a user supplied tracking voltage. Typically this input is one half of VDDQ. The input range for this external reference is 0.2 V to 1.75 V. Above this level, the internal bandgap reference overrides the externally supplied reference voltage. ENABLE (ENA) The enable pin, ENA, provides a digital control to enable or disable (shutdown) the TPS54372. An input voltage of 1.4 V or greater ensures the TPS54372 is enabled. An input of 0.82 V or less ensures the device operation is disabled. These are not standard logic thresholds, even though they are compatible with TTL outputs. When ENA is low, the oscillator, slow-start, PWM control and MOSFET drivers are disabled and held in an initial state ready for device start-up. On an ENA transition from low to high, device start-up begins with the output starting from 0 V. SLOW-START The slow-start circuit provides start-up slope control of the output voltage to limit in-rush currents. The nominal internal slow-start rate is 0.25 V/ms with the minimum rate being 0.35 V/ms. When the voltage on REFIN rises faster than the internal slope or is present when device operation is enabled, the output rises at the internal rate. If the reference voltage on REFIN rises more slowly, then the output rises at approximately the same rate as REFIN. VBIAS REGULATOR (VBIAS) The VBIAS regulator provides internal analog and digital blocks with a stable supply voltage over variations in junction temperature and input voltage. A high quality, low-ESR, ceramic bypass capacitor is required on the VBIAS pin. X7R- or X5R-grade dielectrics are recommended because their values are more stable over temperature. The bypass capacitor should be placed close to the VBIAS pin and returned to AGND. External loading on VBIAS is allowed, with the caution that internal circuits require a minimum VBIAS of 2.7 V, and external loads on VBIAS with ac or digital switching noise may degrade performance. The VBIAS pin may be useful as a reference voltage for external circuits. 12 OSCILLATOR AND PWM RAMP The oscillator frequency can be set to an internally fixed value of 350 kHz by leaving the RT pin unconnected (floating). If a different frequency of operation is required for the application, the oscillator frequency can be externally adjusted from 280 to 700 kHz by connecting a resistor to the RT pin to ground. The switching frequency is approximated by the following equation, where R is the resistance from RT to AGND: Switching Frequency  100 k

500 [kHz] R The following table summarizes the frequency selection configurations: Frequency Selection SWITCHING FREQUENCY RT PIN 350 kHz, internally set Float Externally set 280 kHz to 700 kHz R = 180 kΩ to 68 kΩ ERROR AMPLIFIER The high-performance, wide bandwidth, voltage error amplifier sets the TPS54372 apart from most dc/dc converters. The user has a wide range of output L and C filter components to suit the particular application needs. Type-2 or type-3 compensation can be employed using external compensation components. PWM CONTROL Signals from the error amplifier output, oscillator, and current limit circuit are processed by the PWM control logic. Referring to the internal block diagram, the control logic includes the PWM comparator, OR gate, PWM latch, and portions of the adaptive dead-time and control logic block. During steady-state operation below the current limit threshold, the PWM comparator output and oscillator pulse train alternately reset and set the PWM latch. Once the PWM latch is set, the low-side FET remains on for a minimum duration set by the oscillator pulse width. During this period, the PWM ramp discharges rapidly to its valley voltage. When the ramp begins to charge back up, the low-side FET turns off and high-side FET turns on. As the PWM ramp voltage exceeds the TPS54372 www.ti.com error amplifier output voltage, the PWM comparator resets the latch, thus turning off the high-side FET and turning on the low-side FET. The low-side FET remains on until the next oscillator pulse discharges the PWM ramp. During transient conditions, the error amplifier output could be below the PWM ramp valley voltage or above the PWM peak voltage. If the error amplifier is high, the PWM latch is never reset and the high-side FET remains on until the oscillator pulse signals the control logic to turn the high-side FET off and the low-side FET on. The device operates at its maximum duty cycle until the output voltage rises to the regulation set-point, setting VSENSE to approximately the same voltage as VREF. If the error amplifier output is low, the PWM latch is continually reset and the high-side FET does not turn on. The low-side FET remains on until the VSENSE voltage decreases to a range that allows the PWM comparator to change states. The TPS54372 is capable of sinking current continuously until the output reaches the regulation set-point. If the current limit comparator trips for longer than 100 ns, the PWM latch resets before the PWM ramp exceeds the error amplifier output. The high-side FET turns off and low-side FET turns on to decrease the energy in the output inductor and consequently the output current. This process is repeated each cycle in which the current limit comparator is tripped. DEAD-TIME CONTROL AND MOSFET DRIVERS Adaptive dead-time control prevents shoot-through current from flowing in both N-channel power MOSFETs during the switching transitions by actively controlling the turnon times of the MOSFET drivers. The high-side driver does not turn on until the gate drive voltage to the low-side FET is below 2 V, while the low-side driver does not turn on until the voltage at the gate of the high-side MOSFET is below 2 V. The high-side and low-side drivers are designed with 300-mA source and sink capability to quickly drive the power MOSFETs gates. The low-side driver is supplied from VIN, while the high-side drive is supplied from the BOOT pin. A bootstrap circuit uses an external BOOT capacitor and an internal 2.5-Ω. bootstrap switch connected between the VIN and BOOT pins. The integrated bootstrap switch improves drive efficiency and reduces external component count. SLVS430D – JUNE 2002 – REVISED FEBRUARY 2005 OVERCURRENT PROTECTION The cycle by cycle current limiting is achieved by sensing the current flowing through the high-side MOSFET and comparing this signal to a preset overcurrent threshold. The high-side MOSFET is turned off within 200 ns of reaching the current limit threshold. A 100-ns leading edge blanking circuit prevents false tripping of the current limit when the high-side switch is turning on. Current limit detection occurs only when current flows from VIN to PH when sourcing current to the output filter. Load protection during current sink operation is provided by thermal shutdown. THERMAL SHUTDOWN The device uses the thermal shutdown to turn off the power MOSFETs and disable the controller if the junction temperature exceeds 150°C. The device is released from shutdown automatically when the junction temperature decreases to 10°C below the thermal shutdown trip-point, and starts up under control of the slow-start circuit. Thermal shutdown provides protection when an overload condition is sustained for several milliseconds. With a persistent fault condition, the device cycles continuously; starting up by control of the soft-start circuit, heating up due to the fault condition, and then shutting down on reaching the thermal limit trip-point. This sequence repeats until the fault condition is removed. STATUS The status pin is an open-drain output that indicates when internal conditions are sufficient for proper operation. STATUS can be coupled back to a system controller or monitor circuit to indicate that the termination or tracking regulator is ready for start-up. STATUS is high impedance when the TPS54372 is operating or ready to be enabled. STATUS is active low if any of the following occur: • VIN < UVLO threshold • VBIAS or internal reference have not settled. • Thermal shutdown is active. 13 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS54372PWP ACTIVE HTSSOP PWP 20 70 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TPS54372 TPS54372PWPG4 ACTIVE HTSSOP PWP 20 70 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TPS54372 TPS54372PWPR ACTIVE HTSSOP PWP 20 2000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TPS54372 TPS54372PWPRG4 ACTIVE HTSSOP PWP 20 2000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TPS54372 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of