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TPS54622RHLT

TPS54622RHLT

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    VQFN14_EP

  • 描述:

    IC REG BUCK ADJUSTABLE 6A 14VQFN

  • 数据手册
  • 价格&库存
TPS54622RHLT 数据手册
Order Now Product Folder Support & Community Tools & Software Technical Documents Reference Design TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 TPS54622 4.5-V to 17-V Input, 6-A Synchronous Step-Down SWIFT™ Converter With Hiccup Protection 1 Features 3 Description • • • • • • • • The TPS54622 device in thermally enhanced 3.5-mm × 3.5-mm VQFN package is a full-featured 17-V, 6-A synchronous step-down converter optimized for small designs through high efficiency and integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and by selecting a high switching frequency, reducing the footprint of the inductor. 1 • • • • • Integrated 26-mΩ and 19-mΩ MOSFETs Split Power Rail: 1.6 V to 17 V on PVIN 200-kHz to 1.6-MHz Switching Frequency Synchronizes to External Clock 0.6V ±1% Voltage Reference Overtemperature Hiccup Current Limit Monotonic Start-Up Into Prebiased Outputs –40°C to 150°C Operating Junction Temperature Range Adjustable Slow Start and Power Sequencing Power Good Output Monitor for Undervoltage and Overvoltage Adjustable Input Undervoltage Lockout For SWIFT™ Documentation, visit http://www.ti.com/swift Create a Custom Design Using the TPS54622 With the WEBENCH® Power Designer 2 Applications • • • High-Density Distributed Power Systems High-Performance Point-of-Load Regulation Broadband, Networking, and Optical Communications Infrastructure The output voltage start-up ramp is controlled by the SS/TR pin, which allows operation as either a standalone power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and the open-drain power good pins. Cycle-by-cycle current limiting on the high-side FET protects the device in overload situations and is enhanced by a low-side sourcing current limit that prevents current runaway. There is also a low-side sinking current limit that turns off the low-side MOSFET to prevent excessive reverse current. Hiccup protection is triggered if the overcurrent condition has persisted for longer than the preset time. Thermal hiccup protection disables the device when the die temperature exceeds the thermal shutdown temperature and enables the part again after the built-in thermal shutdown hiccup time. Device Information(1) PART NUMBER PACKAGE TPS54622 BODY SIZE (NOM) VQFN (14) 3.50 mm × 3.50 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic TPS54622 VIN VIN BOOT Efficiency vs Load Current 100 CBOOT 95 LO EN PH 90 VOUT 85 SS RT/CLK COMP R3 R1 VSENSE VIN = 12 V 75 VIN = 17 V 70 65 60 PowerPad C1 80 R2 GND CSS RRT Efficiency - % VIN = 8 V PWRGD 55 50 0 C2 1 2 3 Output Current - A 4 5 6 Copyright © 2016, Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configurations and Functions ....................... Specifications......................................................... 1 1 1 2 4 5 6.1 6.2 6.3 6.4 6.5 6.6 5 5 5 6 6 8 Absolute Maximum Ratings ..................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description ............................................ 11 7.1 7.2 7.3 7.4 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 11 12 12 20 8 Application and Implementation ........................ 23 8.1 Application Information............................................ 23 8.2 Typical Application ................................................. 23 9 Power Supply Recommendations...................... 32 10 Layout................................................................... 32 10.1 Layout Guidelines ................................................. 32 10.2 Layout Examples................................................... 33 10.3 Estimated Circuit Area .......................................... 34 11 Device and Documentation Support ................. 35 11.1 11.2 11.3 11.4 11.5 11.6 11.7 Device Support...................................................... Documentation Support ........................................ Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 35 35 35 35 35 36 36 12 Mechanical, Packaging, and Orderable Information ........................................................... 36 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision E (December 2016) to Revision F Page • Added top nav icon for TI Design .......................................................................................................................................... 1 • Added links for WEBENCH on page 1 and in Application and Implementation and Device and Documentation Support sections .................................................................................................................................................................... 1 • Changed RθJA value from "47.2" to "40.1" ............................................................................................................................. 6 • Changed RθJCtop value from "64.8" to "34.4" .......................................................................................................................... 6 • Changed RθJB value from "14.4" to "11.4" ............................................................................................................................. 6 • Changed ψJB value from "14.7" to "11.4" ............................................................................................................................... 6 • Changed RθJCbot value from "3.2" to "1.8" .............................................................................................................................. 6 • Added new paragraph to end of Sequencing (SS/TR)......................................................................................................... 22 Changes from Revision D (August 2016) to Revision E Page • Changed Error amplifier dc gain Test Condition From: VSENSE = 0.8 V To: VSENSE = 0.6 V in the Electrical Characteristics table ............................................................................................................................................................... 6 • Changed From: (Vref) is 0.8 V To: (Vref) is 0.6 V in section Slow Start (SS/TR)................................................................ 15 • Changed text From: "voltage reference of 0.8 V. Above 0.8 V,.." To: "voltage reference of 0.6 V. Above 0.6 V,.." in the Minimum Output Voltage section.................................................................................................................................... 27 Changes from Revision C (August 2015) to Revision D Page • Changed text string from "should be 0.1 μF" to "should be between 0.1 μF and 1.0 μF in section Bootstrap Voltage (BOOT) and Low Dropout Operation." ................................................................................................................................. 21 • Changed text string from "A 0.1 μF ceramic capacitor" to "A 0.1 μF to 1 μF ceramic capacitor" in section Bootstrap Capacitor Selection............................................................................................................................................................... 26 2 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 Changes from Revision B (January 2014) to Revision C Page • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .................................................................................................. 1 • Changed From separate RHL and RGY packages To a combined RHL and RGY package ................................................ 4 Changes from Revision A (March 2013) to Revision B • Page Changed FEATURE From: Low 2 µA Shutdown Quiescent Current To: Hiccup Current Limit ............................................. 1 Changes from Original (March 2010) to Revision A • Page Added PH 5ns Transient to the ABSOLUTE MAXIMUM RATINGS table.............................................................................. 5 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 3 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com 5 Pin Configurations and Functions RHL Package 14-Pin VQFN With Exposed Thermal Pad Top View RT/CLK 1 PWRGD 14 GND 2 13 BOOT GND 3 PVIN 4 PVIN 5 12 PH Exposed Thermal Pad (15) 11 PH 10 EN VIN 6 9 SS/TR 7 VSENSE 8 COMP Pin Functions PIN I/O (1) DESCRIPTION NAME NO. BOOT 13 I A bootstrap cap is required between BOOT and PH. The voltage on this cap carries the gate drive voltage for the high-side MOSFET. COMP 8 O Error amplifier output, and input to the output switch current comparator. Connect frequency compensation to this pin. EN 10 I Enable pin. Float to enable. Adjust the input undervoltage lockout with two resistors. GND 2, 3 G Return for control circuitry and low-side power MOSFET. 11, 12 O The switch node. PVIN 4, 5 P Power input. Supplies the power switches of the power converter. PWRGD 14 G Power Good fault pin. Asserts low if output voltage is low due to thermal shutdown, dropout, overvoltage, EN shutdown or during slow start. RT/CLK 1 I Automatically selects between RT mode and CLK mode. An external timing resistor adjusts the switching frequency of the device; In CLK mode, the device synchronizes to an external clock. SS/TR 9 O Slow start and tracking. An external capacitor connected to this pin sets the internal voltage reference rise time. The voltage on this pin overrides the internal reference. It can be used for tracking and sequencing. VIN 6 P Supplies the control circuitry of the power converter. VSENSE 7 I Inverting input of the gm error amplifier. Exposed Thermal PAD 15 G Thermal pad of the package and signal ground and it must be soldered down for proper operation. PH (1) 4 I = input, O = output, G = GND, P = Power Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 6 Specifications 6.1 Absolute Maximum Ratings (1) Input voltage Output voltage MIN MAX VIN –0.3 20 PVIN –0.3 20 EN –0.3 6 BOOT –0.3 27 VSENSE –0.3 3 COMP –0.3 3 PWRGD –0.3 6 SS/TR –0.3 3 RT/CLK –0.3 6 BOOT-PH 0 7.5 PH –1 20 PH 10-ns transient –3 20 PH 5-ns transient –4 20 Vdiff (GND to exposed thermal pad) Source current Sink current –0.2 UNIT V V 0.2 V ±100 µA PH Current Limit A PH Current Limit A PVIN Current Limit A ±200 µA RT/CLK COMP –0.1 5 mA Operating junction temperature PWRGD –40 150 °C Storage temperature, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged device model (CDM), per JEDEC specification JESD22-C101 (2) ±500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Input voltage VIN 4.5 17 V Power stage input voltage PVIN 1.6 17 V 0 6 A –40 150 °C Output current Operating junction temperature, TJ Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 5 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com 6.4 Thermal Information TPS54622 THERMAL METRIC (1) (2) RHL (VQFN) UNIT 14 PINS RθJA Junction-to-ambient thermal resistance (3) 40.1 °C/W RθJA Junction-to-ambient thermal resistance 32 °C/W RθJCtop Junction-to-case (top) thermal resistance 34.4 °C/W RθJB Junction-to-board thermal resistance 11.4 °C/W ψJT Junction-to-top characterization parameter 0.5 °C/W ψJB Junction-to-board characterization parameter 11.4 °C/W RθJCbot Junction-to-case (bottom) thermal resistance 1.8 °C/W (1) (2) (3) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where distortion starts to substantially increase. Thermal management of the PCB should strive to keep the junction temperature at or below 150°C for best performance and long-term reliability. See the power dissipation estimate in the application section of this datasheet for more information. Test Board Conditions: (a) 2.5 inches × 2.5 inches, 4 layers, thickness: 0.062 inch (b) 2 oz. copper traces located on the top of the PCB (c) 2 oz. copper ground planes on the 2 internal layers of and the bottom layer (d) 4 0.010 inch thermal vias located under the device package 6.5 Electrical Characteristics TJ = –40°C to 150°C, VIN = 4.5 V to 17 V, PVIN = 1.6 V to 17 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE (VIN AND PVIN PINS) PVIN operating input voltage 1.6 17 V VIN operating input voltage 4.5 17 V VIN internal UVLO threshold VIN rising 4 VIN internal UVLO hysteresis 4.5 150 VIN shutdown supply Current EN = 0 V VIN operating – non switching supply current V mV 2 5 μA VSENSE = 810 mV 600 800 μA Enable threshold Rising 1.21 1.26 V Enable threshold Falling Input current EN = 1.1 V 1.15 μA Hysteresis current EN = 1.3 V 3.3 μA ENABLE AND UVLO (EN PIN) 1.1 1.17 VOLTAGE REFERENCE 0 A ≤ IOUT ≤ 6 A Voltage reference 0.594 0.6 0.606 V BOOT-PH = 3 V 32 60 mΩ BOOT-PH = 6 V 26 40 mΩ VIN = 12 V 19 30 mΩ MOSFET High-side switch resistance High-side switch resistance (1) Low-side switch resistance (1) ERROR AMPLIFIER Error amplifier transconductance (gm) –2 μA < ICOMP < 2 μA, V(COMP) = 1 V Error amplifier dc gain VSENSE = 0.6 V Error amplifier source/sink V(COMP) = 1 V, 100 mV input overdrive Start switching threshold 6 1300 μMhos 3100 V/V ±110 μA 0.25 COMP to Iswitch gm (1) 1000 16 V A/V Measured at pins. Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 Electrical Characteristics (continued) TJ = –40°C to 150°C, VIN = 4.5 V to 17 V, PVIN = 1.6 V to 17 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 8 11 14 A 6.5 10 15 A 3 4 CURRENT LIMIT High-side switch current limit threshold Low-side switch sourcing current limit Low-side switch sinking current limit 2 Hiccup wait time Hiccup time before re-start A 512 Cycles 16384 Cycles THERMAL SHUTDOWN Thermal shutdown 160 Thermal shutdown hysteresis 175 °C 10 Thermal shutdown hiccup time °C 16384 Cycles TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN) Minimum switching frequency Rrt = 240 kΩ (1%) 160 200 240 kHz Switching frequency Rrt = 100 kΩ (1%) 400 480 560 kHz Maximum switching frequency Rrt = 29 kΩ (1%) 1440 1600 1760 kHz Minimum pulse width 20 RT/CLK high threshold RT/CLK low threshold RT/CLK falling edge to PH rising edge delay ns 2 V 0.8 Measure at 500 kHz with RT resistor in series Switching frequency range (RT mode set point and PLL mode) V 66 200 ns 1600 kHz 145 ns PH (PH PIN) Minimum on-time Measured at 90% to 90% of VIN, 25°C, IPH = 2A Minimum off-time BOOT-PH ≥ 3 V 94 0 ns BOOT (BOOT PIN) BOOT-PH UVLO 2.1 3 V 60 mV SLOW START AND TRACKING (SS/TR PIN) SS charge current SS/TR to VSENSE matching 2.3 V(SS/TR) = 0.4 V 20 VSENSE falling (Fault) μA POWER GOOD (PWRGD PIN) VSENSE threshold 92 % Vref VSENSE rising (Good) 94 % Vref VSENSE rising (Fault) 106 % Vref VSENSE falling (Good) 104 Output high leakage VSENSE = Vref, V(PWRGD) = 5.5 V Output low I(PWRGD) = 2 mA Minimum VIN for valid output V(PWRGD) < 0.5 V at 100 μA Minimum SS/TR voltage for PWRGD 30 0.6 % Vref 100 nA 0.3 V 1 V 1.4 V Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 7 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com 6.6 Typical Characteristics 30 40 VIN = 12 V RDS(on) − On Resistance − mW RDS(on) − On Resistance − mW VIN = 12 V 35 30 25 20 −50 −25 0 25 50 75 100 125 27 24 21 18 15 −50 150 −25 Figure 1. High-Side RDS(on) vs Temperature 50 75 100 125 150 Figure 2. Low-Side RDS(on) vs Temperature 485 fO − Oscillator Frequency − kHz 0.606 Vref − Voltage Reference − V 25 TJ − Junction Temperature - ° C TJ − Junction Temperature − °C 0.604 0.602 0.600 0.598 0.596 0.594 −50 −25 0 25 50 75 100 125 480 475 470 RT = 100 kΩ 465 −50 150 −25 0 25 50 75 100 125 150 TJ − Junction Temperature − °C Figure 3. Voltage Reference vs Temperature Figure 4. Oscillator Frequency vs Temperature N μ Isd – Shutdown Quiescent Current – mA TJ − Junction Temperature − °C Figure 5. Shutdown Quiescent Current vs Input Voltage 8 0 Figure 6. EN Pin Hysteresis Current vs Temperature Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 Typical Characteristics (continued) 1.220 μ En Pin UVLO Threshold − V VIN = 12 V 1.215 1.210 1.205 1.200 −50 −25 °C 25 50 75 100 125 150 TJ − Junction Temperature − °C Figure 8. Pin UVLO Threshold vs Temperature Figure 7. Pin Pullup Current vs Temperature 2.5 ISS − Slow Start Charge Current − mA Non-Switching Operating Quiescent Current − mA 0 800 TJ = −40°C 700 TJ = −25°C TJ = 150°C 600 500 2.4 2.3 2.2 2.1 −50 400 3 6 9 12 −25 15 0 25 50 75 100 125 150 TJ − Junction Temperature − °C VI − Input Voltage − V Figure 10. Slow Start Charge Current vs Temperature Figure 9. Non-Switching Operating Quiescent Current (VIN) vs Input Voltage 120 ISS − SS Charge Current − μA Voff − SS/TR to Vsense Offset − V 0.040 0.030 0.020 0.010 −50 −25 0 25 50 75 100 125 150 Vin = 12 V 110 VSENSE Rising VSENSE Falling 100 VSENSE Rising 90 VSENSE Falling 80 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature − °C TJ − Junction Temperature − °C Figure 11. (SS/TR - VSENSE) Offset vs Temperature Figure 12. PWRGD Threshold vs Temperature Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 9 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com Typical Characteristics (continued) 140 Minimum Controllable On Time − ns IcI − Current Limit Threshold − A 13 12 11 10 TJ = −40°C 9 TJ = 25°C TJ = 150°C 8 7 6 5 1 5 9 13 130 120 110 100 90 VIN = 12 V 80 −50 17 VI − Input Voltage − V −25 0 25 50 75 100 125 150 TJ − Junction Temperature − °C Figure 13. High-Side Current Limit Threshold vs Input Voltage Figure 14. Minimum Controllable On-Time vs Temperature 6.0 5.0 RT = 100 kΩ VIN = 12 V BOOT-PH UVLO Threshold – V 7.0 4.0 °C Figure 15. Minimum Controllable Duty Ratio vs Junction Temperature 10 Figure 16. BOOT-PH UVLO Threshold vs Temperature Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 7 Detailed Description 7.1 Overview The TPS54622 device is a 17-V, 6-A, synchronous step-down (buck) converter with two integrated N-channel MOSFETs. To improve performance during line and load transients the device implements a constant frequency, peak current mode control which also simplifies external frequency compensation. The wide switching frequency of 200 kHz to 1600 kHz allows for efficiency and size optimization when selecting the output filter components. The switching frequency is adjusted using a resistor to ground on the RT/CLK pin. The device also has an internal phase lock loop (PLL) controlled by the RT/CLK pin that can be used to synchronize the switching cycle to the falling edge of an external system clock. The device has been designed for safe monotonic start-up into prebiased loads. The default start-up is when VIN is typically 4 V. The EN pin has an internal pullup current source that can be used to adjust the input voltage undervoltage lockout (UVLO) with two external resistors. In addition, the EN pin can be floating for the device to operate with the internal pullup current. The total operating current for the device is approximately 600 μA when not switching and under no load. When the device is disabled, the supply current is typically less than 2 μA. The integrated MOSFETs allow for high-efficiency power supply designs with continuous output currents up to 6 amperes. The MOSFETs have been sized to optimize efficiency for lower duty cycle applications. The device reduces the external component count by integrating the boot recharge circuit. The bias voltage for the integrated high-side MOSFET is supplied by a capacitor between the BOOT and PH pins. The boot capacitor voltage is monitored by a BOOT to PH UVLO (BOOT-PH UVLO) circuit allowing PH pin to be pulled low to recharge the boot capacitor. The device can operate at 100% duty cycle as long as the boot capacitor voltage is higher than the preset BOOT-PH UVLO threshold which is typically 2.1 V. The output voltage can be stepped down to as low as the 0.6-V voltage reference (Vref). The device has a power good comparator (PWRGD) with hysteresis which monitors the output voltage through the VSENSE pin. The PWRGD pin is an open-drain MOSFET which is pulled low when the VSENSE pin voltage is less than 92% or greater than 106% of the reference voltage Vref and asserts high when the VSENSE pin voltage is 94% to 104% of the Vref. The SS/TR (slow start/tracking) pin is used to minimize inrush currents or provide power supply sequencing during power up. A small value capacitor or resistor divider should be coupled to the pin for slow start or critical power supply sequencing requirements. The device is protected from output overvoltage, overload, and thermal fault conditions. The device minimizes excessive output overvoltage transients by taking advantage of the overvoltage circuit power good comparator. When the overvoltage comparator is activated, the high-side MOSFET is turned off and prevented from turning on until the VSENSE pin voltage is lower than 104% of the Vref. The device implements both high-side MOSFET overload protection and bidirectional low-side MOSFET overload protections which help control the inductor current and avoid current runaway. The device also shuts down if the junction temperature is higher than thermal shutdown trip point. The device is restarted under control of the slow start circuit automatically after the built-in thermal shutdown hiccup time. Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 11 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com 7.2 Functional Block Diagram PWRGD EN VIN UV i1 Logic iHYS Thermal Shutdown UVLO Enable Comparator OV Shutdown Logic Voltage Reference VSENSE PVIN Enable Threshold Hiccup Shutdown Boot Charge Boot UVLO + + SS Shutdown BOOT OV Minimum COMP Clamp Logic HS FET Current Comparator COMP Dead Time Logic and PWM Latch PH Slope Compensation Overload Recovery Maximum Clamp OSC with PLL Hiccup Shutdown RT/CLK VIN LS FET Current Limit Regulator GND Copyright © 2016, Texas Instruments Incorporated 7.3 Feature Description 7.3.1 Fixed-Frequency PWM Control The device uses a adjustable fixed-frequency, peak current mode control. The output voltage is compared through external resistors on the VSENSE pin to an internal voltage reference by an error amplifier which drives the COMP pin. An internal oscillator initiates the turnon of the high-side power switch. The error amplifier output is converted into a current reference which compares to the high-side power switch current. When the power switch current reaches current reference generated by the COMP voltage level the high-side power switch is turned off and the low-side power switch is turned on. 7.3.2 Continuous Current Mode Operation (CCM) As a synchronous buck converter, the device normally works in continuous conduction mode (CCM) under all load conditions. 7.3.3 VIN and Power VIN Pins (VIN and PVIN) The device allows for a variety of applications by using the VIN and PVIN pins together or separately. The VIN pin voltage supplies the internal control circuits of the device. The PVIN pin voltage provides the input voltage to the power converter system. If tied together, the input voltage for VIN and PVIN can range from 4.5 V to 17 V. If using the VIN separately from PVIN, the VIN pin must be from 4.5 V to 17 V, and the PVIN pin can range from as low as 1.6 V to 17 V. A voltage divider connected to the EN pin can adjust the either input voltage UVLO appropriately. Adjusting the input voltage UVLO on the PVIN pin helps to provide consistent power-up behavior. 12 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 Feature Description (continued) 7.3.4 Voltage Reference The voltage reference system produces a precise ±1% voltage reference overtemperature by scaling the output of a temperature stable bandgap circuit. 7.3.5 Adjusting the Output Voltage The output voltage is set with a resistor-divider from the output (VOUT) to the VSENSE pin. TI recommends using 1% tolerance or better divider resistors. Referring to the application schematic of Figure 29, start with a 10 kΩ for R6 and use Equation 1 to calculate R5. To improve efficiency at light loads, consider using larger value resistors. If the values are too high, the regulator is more susceptible to noise and voltage errors from the VSENSE input current and are noticeable. Vo - Vref R5 = R6 Vref where • Vref = 0.6 V (1) The minimum output voltage and maximum output voltage can be limited by the minimum on-time of the highside MOSFET and bootstrap voltage (BOOT-PH voltage) respectively. More discussions are located in Minimum Output Voltage and Bootstrap Voltage (BOOT) and Low Dropout Operation. 7.3.6 Safe Start-Up Into Prebiased Outputs The device has been designed to prevent the low-side MOSFET from discharging a prebiased output. During monotonic prebiased startup, the low-side MOSFET is not allowed to sink current until the SS/TR pin voltage is higher than 1.4 V. 7.3.7 Error Amplifier The device uses a transconductance error amplifier. The error amplifier compares the VSENSE pin voltage to the lower of the SS/TR pin voltage or the internal 0.6-V voltage reference. The transconductance of the error amplifier is 1300 μA/V during normal operation. The frequency compensation network is connected between the COMP pin and ground. 7.3.8 Slope Compensation The device adds a compensating ramp to the switch current signal. This slope compensation prevents subharmonic oscillations. The available peak inductor current remains constant over the full duty cycle range. 7.3.9 Enable and Adjusting Undervoltage Lockout The EN pin provides electrical on/off control of the device. Once the EN pin voltage exceeds the threshold voltage, the device starts operation. If the EN pin voltage is pulled below the threshold voltage, the regulator stops switching and enters low Iq state. The EN pin has an internal pullup current source, allowing the user to float the EN pin for enabling the device. If an application requires controlling the EN pin, use open-drain or open collector output logic to interface with the pin. The device implements internal UVLO circuitry on the VIN pin. The device is disabled when the VIN pin voltage falls below the internal VIN UVLO threshold. The internal VIN UVLO threshold has a hysteresis of 150 mV. If an application requires either a higher UVLO threshold on the VIN pin or a secondary UVLO on the PVIN, in split rail applications, then the EN pin can be configured as shown in Figure 17, Figure 18, and Figure 19. When using the external UVLO function, TI recommends setting the hysteresis to be greater than 500 mV. The EN pin has a small pullup current Ip which sets the default state of the pin to enable when no external components are connected. The pullup current is also used to control the voltage hysteresis for the UVLO function since it increases by Ih once the EN pin crosses the enable threshold. The UVLO thresholds can be calculated using Equation 2 and Equation 3. Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 13 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com Feature Description (continued) VIN IP IH R1 EN + R2 Copyright © 2016, Texas Instruments Incorporated Figure 17. Adjustable VIN Undervoltage Lockout PVIN IP IH R1 EN + R2 Copyright © 2016, Texas Instruments Incorporated Figure 18. Adjustable PVIN Undervoltage Lockout, VIN ≥ 4.5 V 14 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 Feature Description (continued) VIN IP IH R1 EN + R2 Copyright © 2016, Texas Instruments Incorporated Figure 19. Adjustable VIN and PVIN Undervoltage Lockout æV ö VSTART ç ENFALLING ÷ - VSTOP è VENRISING ø R1 = æ V ö Ip ç1 - ENFALLING ÷ + Ih V ENRISING ø è R2 = VSTOP (2) R1´ VENFALLING - VENFALLING + R1(Ip + Ih ) where • • • • Ih = 3.4 μA Ip = 1.15 μA VENRISING = 1.21 V VENFALLING = 1.17 V (3) 7.3.10 Adjustable Switching Frequency and Synchronization (RT/CLK) The RT/CLK pin can be used to set the switching frequency of the device in two modes. In RT mode, a resistor (RT resistor) is connected between the RT/CLK pin and GND. The switching frequency of the device is adjustable from 200 kHz to 1600 kHz by placing a maximum of 240 kΩ and minimum of 29 kΩ respectively. In CLK mode, an external clock is connected directly to the RT/CLK pin. The device is synchronized to the external clock frequency with PLL. The CLK mode overrides the RT mode. The device is able to detect the proper mode automatically and switch from the RT mode to CLK mode. 7.3.11 Slow Start (SS/TR) The device uses the lower voltage of the internal voltage reference or the SS/TR pin voltage as the reference voltage and regulates the output accordingly. A capacitor on the SS/TR pin to ground implements a slow start time. The device has an internal pullup current source of 2.3 μA that charges the external slow-start capacitor. The calculations for the slow start time (tSS, 10% to 90%) and slow-start capacitor (Css) are shown in Equation 4. The voltage reference (Vref) is 0.6 V and the slow start charge current (Iss) is 2.3 μA. Css (nF) ´ Vref (V) t SS (ms) = Iss (µA) (4) Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 15 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com Feature Description (continued) When the input UVLO is triggered, the EN pin is pulled below 1.21 V, or a thermal shutdown event occurs the device stops switching and enters low current operation. At the subsequent power up, when the shutdown condition is removed, the device does not start switching until it has discharged its SS/TR pin to ground ensuring proper soft start behavior. 7.3.12 Power Good (PWRGD) The PWRGD pin is an open-drain output. Once the VSENSE pin is between 94% and 104% of the internal voltage reference the PWRGD pin pulldown is deasserted and the pin floats. TI recommends using a pullup resistor from the values of 10 kΩ to 100 kΩ to a voltage source that is 5.5 V or less. The PWRGD is in a defined state once the VIN input voltage is greater than 1 V but with reduced current sinking capability. The PWRGD achieves full current sinking capability once the VIN input voltage is above 4.5 V. The PWRGD pin is pulled low when VSENSE is lower than 92% or greater than 106% of the nominal internal reference voltage. Also, the PWRGD is pulled low, if the input UVLO or thermal shutdown are asserted, the EN pin is pulled low or the SS/TR pin is below 1.4 V. 7.3.13 Output Overvoltage Protection (OVP) The device incorporates an output overvoltage protection (OVP) circuit to minimize output voltage overshoot. For example, when the power supply output is overloaded the error amplifier compares the actual output voltage to the internal reference voltage. If the VSENSE pin voltage is lower than the internal reference voltage for a considerable time, the output of the error amplifier demands maximum output current. Once the condition is removed, the regulator output rises and the error amplifier output transitions to the steady state voltage. In some applications with small output capacitance, the power supply output voltage can respond faster than the error amplifier. This leads to the possibility of an output overshoot. The OVP feature minimizes the overshoot by comparing the VSENSE pin voltage to the OVP threshold. If the VSENSE pin voltage is greater than the OVP threshold the high-side MOSFET is turned off preventing current from flowing to the output and minimizing output overshoot. When the VSENSE voltage drops lower than the OVP threshold, the high-side MOSFET is allowed to turn on at the next clock cycle. 7.3.14 Overcurrent Protection The device is protected from overcurrent conditions by cycle-by-cycle current limiting on both the high-side MOSFET and the low-side MOSFET. 7.3.14.1 High-Side MOSFET Overcurrent Protection The device implements current mode control which uses the COMP pin voltage to control the turnoff of the highside MOSFET and the turnon of the low-side MOSFET on a cycle-by-cycle basis. Each cycle the switch current and the current reference generated by the COMP pin voltage are compared, when the peak switch current intersects the current reference the high-side switch is turned off. 7.3.14.2 Low-Side MOSFET Overcurrent Protection While the low-side MOSFET is turned on its conduction current is monitored by the internal circuitry. During normal operation the low-side MOSFET sources current to the load. At the end of every clock cycle, the low-side MOSFET sourcing current is compared to the internally set low-side sourcing current limit. If the low-side sourcing current is exceeded the high-side MOSFET is not turned on and the low-side MOSFET stays on for the next cycle. The high-side MOSFET is turned on again when the low-side current is below the low-side sourcing current limit at the start of a cycle. The low-side MOSFET may also sink current from the load. If the low-side sinking current limit is exceeded the low-side MOSFET is turned off immediately for the rest of that clock cycle. In this scenario both MOSFETs are off until the start of the next cycle. Furthermore, if an output overload condition (as measured by the COMP pin voltage) has lasted for more than the hiccup wait time which is programmed for 512 switching cycles, the device will shut down itself and restart after the hiccup time of 16384 cycles. The hiccup mode helps to reduce the device power dissipation under severe overcurrent conditions. 16 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 Feature Description (continued) 7.3.15 Thermal Shutdown The internal thermal shutdown circuitry forces the device to stop switching if the junction temperature exceeds 175°C typically. Once the junction temperature drops below 165°C typically, the internal thermal hiccup timer will start to count. The device reinitiates the power-up sequence after the built-in thermal shutdown hiccup time (16384 cycles) is over. 7.3.16 Small Signal Model for Loop Response Figure 20 shows an equivalent model for the device control loop which can be modeled in a circuit simulation program to check frequency response and transient responses. The error amplifier is a transconductance amplifier with a gm of 1300 μA/V. The error amplifier can be modeled using an ideal voltage controlled current source. The resistor ROUT(ea) (2.38 MΩ) and capacitor COUT(ea) (20.7 pF) model the open loop gain and frequency response of the error amplifier. The 1-mV AC voltage source between the nodes a and b effectively breaks the control loop for the frequency response measurements. Plotting a/c and c/b show the small signal responses of the power stage and frequency compensation respectively. Plotting a/b shows the small signal response of the overall loop. The dynamic loop response can be checked by replacing the RL with a current source with the appropriate load step amplitude and step rate in a time domain analysis. PH VOUT Power Stage 16 A/V a RESR b R1 VSENSE COMP RLOAD COUT c + C2 R3 COUT(ea) ROUT(ea) 0.6 V gM 1300 µA/V R2 C1 Copyright © 2016, Texas Instruments Incorporated Figure 20. Small Signal Model for Loop Response 7.3.17 Simple Small Signal Model for Peak Current Mode Control Figure 21 is a simple small signal model that can be used to understand how to design the frequency compensation. The device power stage can be approximated to a voltage controlled current source (duty cycle modulator) supplying current to the output capacitor and load resistor. The control to output transfer function is shown in Equation 5 and consists of a DC gain, one dominant pole and one ESR zero. The quotient of the change in switch current and the change in COMP pin voltage (node c in Figure 20) is the power stage transconductance (gmps) which is 16 A/V for the device. The DC gain of the power stage is the product of gmps and the load resistance ®L) as shown in Equation 6 with resistive loads. As the load current increases, the DC gain decreases. This variation with load may seem problematic at first glance, but fortunately the dominant pole moves with load current (see Equation 7). The combined effect is highlighted by the dashed line in Figure 22. As the load current decreases, the gain increases and the pole frequency lowers, keeping the 0-dB crossover frequency the same for the varying load conditions which makes it easier to design the frequency compensation. Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 17 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com Feature Description (continued) VC RESR RLOAD gm(ps) COUT Copyright © 2016, Texas Instruments Incorporated Figure 21. Simplified Small Signal Model for Peak Current Mode Control Gain Adc fZ fP Frequency Figure 22. Simplified Frequency Response for Peak Current Mode Control æ ç1+ 2p VOUT = Adc ´ è VC æ ç1+ è 2p ö s ÷ ´ ¦z ø ö s ÷ ´ ¦p ø (5) Adc = gmps ´ RL (6) 1 ¦p = C O ´ R L ´ 2p (7) ¦z = 1 CO ´ RESR ´ 2p (8) where gmps is the power stage gain (16 A/V). RL is the load resistance. CO is the output capacitance. RESR is the equivalent series resistance of the output capacitor. 7.3.18 Small Signal Model for Frequency Compensation The device uses a transconductance amplifier for the error amplifier and readily supports two of the commonly used Type II compensation circuits and a Type III frequency compensation circuit, as shown in Figure 23. In Type 2A, one additional high-frequency pole, C6, is added to attenuate high frequency noise. In Type III, one additional capacitor, C11, is added to provide a phase boost at the crossover frequency. See Designing Type III Compensation for Current Mode Step-Down Converters for a complete explanation of Type III compensation. 18 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 Feature Description (continued) The design guidelines below are provided for advanced users who prefer to compensate using the general method. The following equations only apply to designs whose ESR zero is above the bandwidth of the control loop. This is usually true with ceramic output capacitors. See Application and Implementation for a step-by-step design procedure using higher ESR output capacitors with lower ESR zero frequencies. VOUT VSENSE COMP R8 C11 gM(ea) Type III + R4 C6 C4 Type IIB VREF R9 R4 C4 COUT(ea) ROUT(ea) Type IIA Copyright © 2016, Texas Instruments Incorporated Figure 23. Types of Frequency Compensation The general design guidelines for device loop compensation are as follows: 1. Determine the crossover frequency, fc. A good starting point is 1/10th of the switching frequency, fsw. 2. R4 can be determined by: 2p ´ ¦ c ´ VOUT ´ Co R4 = gmea ´ Vref ´ gmps where • • • gmea is the GM amplifier gain (1300 μA/V). gmps is the power stage gain (16 A/V). Vref is the reference voltage (0.6 V). (9) æ ö 1 ç ¦p = ÷ CO ´ RL ´ 2p ø 3. Place a compensation zero at the dominant pole: è C4 can be determined by: R ´ Co C4 = L R4 (10) 4. C6 is optional. It can be used to cancel the zero from the equivalent series resistance (ESR) of the output capacitor CO. ´ Co R C6 = ESR R4 (11) 5. Type III compensation can be implemented with the addition of one capacitor, C11. This allows for slightly higher loop bandwidths and higher phase margins. If used, C11 is calculated from Equation 12. 1 C11 = (2 × p × R8 × fc ) (12) Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 19 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com 7.4 Device Functional Modes 7.4.1 Adjustable Switching Frequency (RT Mode) To determine the RT resistance for a given switching frequency, use Equation 13 or the curve in Figure 24. To reduce the solution size one would set the switching frequency as high as possible, but tradeoffs of the supply efficiency and minimum controllable on-time should be considered. - 0.997 Rrt(k W ) = 48000 × Fsw (kHz ) -2 (13) RT − Resistance − kW 250 200 150 100 50 0 200 400 600 800 1000 1200 1400 1600 Fsw − Oscillator Frequency − kHz Figure 24. RT Set Resistor vs Switching Frequency 7.4.2 Synchronization (CLK Mode) An internal phase locked loop (PLL) has been implemented to allow synchronization from 200 kHz to 1600 kHz, and to easily switch from RT mode to CLK mode. To implement the synchronization feature, connect a square wave clock signal to the RT/CLK pin with a duty cycle from 20% to 80%. The clock signal amplitude must transition lower than 0.8 V and higher than 2 V. The start of the switching cycle is synchronized to the falling edge of RT/CLK pin. In applications where both RT mode and CLK mode are needed, the device can be configured as shown in Figure 25. Before the external clock is present, the device works in RT mode and the switching frequency is set by RT resistor. When the external clock is present, the CLK mode overrides the RT mode. The first time the SYNC pin is pulled above the RT/CLK high threshold (2 V), the device switches from the RT mode to the CLK mode and the RT/CLK pin becomes high impedance as the PLL starts to lock onto the frequency of the external clock. TI does not recommended switching from the CLK mode back to the RT mode because the internal switching frequency drops to 100 kHz first before returning to the switching frequency set by RT resistor. RT/CLK Mode Select RT/CLK RRT Copyright © 2016, Texas Instruments Incorporated Figure 25. Works With Both RT Mode and CLK Mode 20 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 Device Functional Modes (continued) 7.4.3 Bootstrap Voltage (BOOT) and Low Dropout Operation The device has an integrated boot regulator, and requires a small ceramic capacitor between the BOOT and PH pins to provide the gate drive voltage for the high-side MOSFET. The boot capacitor is charged when the BOOT pin voltage is less than VIN and BOOT-PH voltage is below regulation. The value of this ceramic capacitor should be between 0.1 μF and 1 μF. TI recommends a ceramic capacitor with an X7R or X5R grade dielectric with a voltage rating of 10 V or higher because of the stable characteristics over temperature and voltage. To improve drop out, the device is designed to operate at 100% duty cycle as long as the BOOT to PH pin voltage is greater than the BOOT-PH UVLO threshold which is typically 2.1 V. When the voltage between BOOT and PH drops below the BOOT-PH UVLO threshold the high-side MOSFET is turned off and the low-side MOSFET is turned on allowing the boot capacitor to be recharged. In applications with split input voltage rails 100% duty cycle operation can be achieved as long as (VIN – PVIN) > 4 V. 7.4.4 Sequencing (SS/TR) Many of the common power supply sequencing methods can be implemented using the SS/TR, EN and PWRGD pins. The sequential method is illustrated in Figure 26 using two TPS54622 devices. The power good of the first device is coupled to the EN pin of the second device which enables the second power supply once the primary supply reaches regulation. TPS54622 TPS54622 PWRGD EN EN SS/TR SS/TR PWRGD Copyright © 2016, Texas Instruments Incorporated Figure 26. Sequential Start-Up Sequence Figure 27 shows the method implementing ratiometric sequencing by connecting the SS/TR pins of two devices together. The regulator outputs ramp up and reach regulation at the same time. When calculating the slow start time the pullup current source must be doubled in Equation 4. TPS54622 EN CSS TPS54622 EN SS SS PWRGD PWRGD Copyright © 2016, Texas Instruments Incorporated Figure 27. Ratiometric Start-Up Sequence Ratiometric and simultaneous power supply sequencing can be implemented by connecting the resistor network of R1 and R2 shown in Figure 28 to the output of the power supply that needs to be tracked or another voltage reference source. Using Equation 14 and Equation 15, the tracking resistors can be calculated to initiate the Vout2 slightly before, after or at the same time as Vout1. Equation 16 is the voltage difference between Vout1 and Vout2. Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 21 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com Device Functional Modes (continued) To design a ratiometric start-up in which the Vout2 voltage is slightly greater than the Vout1 voltage when Vout2 reaches regulation, use a negative number in Equation 14 and Equation 15 for deltaV. Equation 16 results in a positive number for applications where the Vout2 is slightly lower than Vout1 when Vout2 regulation is achieved. . The deltaV variable is zero volt for simultaneous sequencing. To minimize the effect of the inherent SS/TR to VSENSE offset (Vssoffset, 29 mV) in the slow start circuit and the offset created by the pullup current source (Iss, 2.3 μA) and tracking resistors, the Vssoffset and Iss are included as variables in the equations. To ensure proper operation of the device, the calculated R1 value from Equation 14 must be greater than the value calculated in Equation 17. R1 = Vout2 + D V Vssoffset ´ Vref Iss (14) Vref ´ R1 R2 = Vout2 + DV - Vref DV = Vout1 - Vout2 R1 > 2800 ´ Vout1- 180 ´ DV (15) (16) (17) TPS54622 VOUT(1) EN SS CSS PWRGD TPS54622 VOUT(2) EN R1 R3 SS R2 R4 PWRGD Copyright © 2016, Texas Instruments Incorporated Figure 28. Ratiometric and Simultaneous Start-Up Sequence There are two final considerations when using a resistor divider to the SS/TR pin for simultaneous start-up. First, as described in Power Good (PWRGD), for the PWRGD output to be active the SS/TR voltage must be above 1.4 V. The external divider may prevent the SS/TR voltage from charging above the threshold. For the SS/TR pin to charge above the threshold, an external MOSFET may be needed to disconnect the resistor divider or modify the resistor divider ratio after start-up is complete. The PWRGD pin of the VOUT(1) converter could be used to turn on or turn off the external MOSFET. Second, a pre-bias on VOUT(1) may prevent VOUT(2) from turning on. When the TPS54622 is enabled, an internal 700-Ω MOSFET at the SS/TR pin turns on to discharge the SS/TR voltage as described in Slow Start (SS/TR). The SS/TR pin voltage must discharge below 20 mV before the TPS54622 starts up. If the upper resistor at the SS/TR pin is too small, the SS/TR pin does not discharge below the threshold, and VOUT(2) does not ramp up. The upper resistor in the SS/TR divider may need to be increased to allow the SS/TR pin to discharge below the threshold. 22 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The TPS54622 device is a highly integrated synchronous step-down DC-DC converter. This device is used to convert a higher DC input voltage to a lower DC output voltage, with a maximum output current of 6 A. 8.2 Typical Application The application schematic of Figure 29 was developed to meet the requirements above. This circuit is available as the TPS54622EVM-012 evaluation module. The design procedure is given in this section. For more information about Type II and Type III frequency compensation circuits, see Designing Type III Compensation for Current Mode Step-Down Converters and design calculator (SLVC219). U1 TPS54622RHL 1 2 3 VIN = 8-17V 4 5 6 C1 10 PF VSNS R1 35.7k 7 RT/CLK GND GND PVIN PVIN VIN VSNS PWPD R3 100k 15 EN C3 0.1 PF PWRGD 14 13 BOOT 12 PH 11 PH 10 EN 9 SS/TR 8 COMP L1 3.3 H VOUT EN R5 10k C7 100 PF C8 Optional VSNS R3 3.74k R7 2.21k C2 4.7 PF R2 8.06k VOUT = 3.3V, 6A C5 47pF C4 0.01 PF C6 0.022 PF Copyright © 2016, Texas Instruments Incorporated Figure 29. Typical Application Circuit 8.2.1 Design Requirements This example details the design of a high-frequency switching regulator design using ceramic output capacitors. A few parameters must be known to start the design process. These parameters are typically determined at the system level. For this example, begin with the known parameters listed in Table 1. Table 1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Output voltage 3.3 V Output current 6A Transient response 1-A load step ΔVOUT = 5% Input voltage 12 V nominal, 8 V to 17 V Output voltage ripple 33 mV p-p Start input voltage (rising VIN) 6.528 V Stop input voltage (falling VIN) 6.190 V Switching frequency 480 kHz Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 23 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com 8.2.2 Detailed Design Procedures 8.2.2.1 Custom Design With WEBENCH® Tools Click here to create a custom design using the TPS54622 device with the WEBENCH® Power Designer. 1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements. 2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial. 3. Compare the generated design with other possible solutions from Texas Instruments. The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time pricing and component availability. In most cases, these actions are available: • Run electrical simulations to see important waveforms and circuit performance • Run thermal simulations to understand board thermal performance • Export customized schematic and layout into popular CAD formats • Print PDF reports for the design, and share the design with colleagues Get more information about WEBENCH tools at www.ti.com/WEBENCH. 8.2.2.2 Operating Frequency The first step is to decide on a switching frequency for the regulator. There is a trade off between higher and lower switching frequencies. Higher switching frequencies may produce smaller a solution size using lower valued inductors and smaller output capacitors compared to a power supply that switches at a lower frequency. However, the higher switching frequency causes extra switching losses, which hurt the converter’s efficiency and thermal performance. In this design, a moderate switching frequency of 480 kHz is selected to achieve both a small solution size and a high-efficiency operation. 8.2.2.3 Output Inductor Selection To calculate the value of the output inductor, use Equation 18. KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current. The inductor ripple current is filtered by the output capacitor. Therefore, choosing high inductor ripple currents impact the selection of the output capacitor since the output capacitor must have a ripple current rating equal to or greater than the inductor ripple current. In general, the inductor ripple value is at the discretion of the designer; however, KIND is normally from 0.1 to 0.3 for the majority of applications. L1 = Vinm ax - Vout Vout × Io × Kind Vinm ax × f sw (18) For this design example, use KIND = 0.3 and the inductor value is calculated to be 3.08 µH. For this design, a nearest standard value was chosen: 3.3 µH. For the output filter inductor, it is important that the RMS current and saturation current ratings not be exceeded. The RMS and peak inductor current can be found from Equation 20 and Equation 21. Vinmax - Vout Vout × Iripple = L1 Vinmax × f sw (19) 1 æ Vo × (Vinmax - Vo ) ö ILrms = Io + × ç ÷ 12 çè Vinmax × L1× f sw ÷ø 2 2 Iripple ILpeak = Iout + 2 (20) (21) For this design, the RMS inductor current is 6.02 A and the peak inductor current is 6.84 A. The chosen inductor is a Coilcraft MSS1048 series 3.3 µH. It has a saturation current rating of 7.38 A and a RMS current rating of 7.22 A. 24 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 The current flowing through the inductor is the inductor ripple current plus the output current. During power-up, faults or transient load conditions, the inductor current can increase above the calculated peak inductor current level calculated above. In transient conditions, the inductor current can increase up to the switch current limit of the device. For this reason, the most conservative approach is to specify an inductor with a saturation current rating equal to or greater than the switch current limit rather than the peak inductor current. 8.2.2.4 Output Capacitor Selection There are three primary considerations for selecting the value of the output capacitor. The output capacitor determines the modulator pole, the output voltage ripple, and how the regulator responds to a large change in load current. The output capacitance needs to be selected based on the more stringent of these three criteria. The desired response to a large change in the load current is the first criteria. The output capacitor needs to supply the load with current when the regulator can not. This situation would occur if there are desired hold-up times for the regulator where the output capacitor must hold the output voltage above a certain level for a specified amount of time after the input power is removed. The regulator is also temporarily not able to supply sufficient output current if there is a large, fast increase in the current needs of the load such as a transition from no load to full load. The regulator usually needs two or more clock cycles for the control loop to see the change in load current and output voltage and adjust the duty cycle to react to the change. The output capacitor must be sized to supply the extra current to the load until the control loop responds to the load change. The output capacitance must be large enough to supply the difference in current for 2 clock cycles while only allowing a tolerable amount of droop in the output voltage. Equation 22 shows the minimum output capacitance necessary to accomplish this. 2 × DIout Co > f sw × DVout where • • • ΔIout is the change in output current. fSW is the regulators switching frequency. ΔVout is the allowable change in the output voltage. (22) For this example, the transient load response is specified as a 5% change in Vout for a load step of 1 A. For this example, ΔIout = 3 A and ΔVout = 0.05 × 3.3 = 0.165 V. Using these numbers gives a minimum capacitance of 75.8 μF. This value does not take the ESR of the output capacitor into account in the output voltage change. For ceramic capacitors, the ESR is usually small enough to ignore in this calculation. Equation 23 calculates the minimum output capacitance needed to meet the output voltage ripple specification. Where fsw is the switching frequency, Vripple is the maximum allowable output voltage ripple, and Iripple is the inductor ripple current. In this case, the maximum output voltage ripple is 33 mV. Under this requirement, Equation 23 yields 13.2 µF. 1 1 Co > × 8 × f sw Voripple Iripple (23) Equation 24 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple specification. Equation 24 indicates the ESR should be less than 19.7 mΩ. In this case, the ESR of the ceramic capacitors is much smaller than 19.7 mΩ. Voripple Resr < Iripple (24) Additional capacitance deratings for aging, temperature and DC bias should be factored in which increases this minimum value. For this example, a 100-μF, 6.3-V X5R ceramic capacitor with 3 mΩ of ESR is be used. Capacitors generally have limits to the amount of ripple current they can handle without failing or producing excess heat. An output capacitor that can support the inductor ripple current must be specified. Some capacitor data sheets specify the RMS (Root Mean Square) value of the maximum ripple current. Equation 25 can be used to calculate the RMS ripple current the output capacitor needs to support. For this application, Equation 25 yields 485 mA. Vout × (Vinmax - Vout ) Icorms = 12 × Vinmax × L1× f sw (25) Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 25 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com 8.2.2.5 Input Capacitor Selection The TPS54622 requires a high-quality ceramic, type X5R or X7R, input decoupling capacitor of at least 4.7 µF of effective capacitance on the PVIN input voltage pins and 4.7 µF on the Vin input voltage pin. In some applications, additional bulk capacitance may also be required for the PVIN input. The effective capacitance includes any DC bias effects. The voltage rating of the input capacitor must be greater than the maximum input voltage. The capacitor must also have a ripple current rating greater than the maximum input current ripple of the TPS54622. The input ripple current can be calculated using Equation 26. Icirms = Iout × Vout (Vinmin - Vout ) × Vinmin Vinmin (26) The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the capacitor. The capacitance variations due to temperature can be minimized by selecting a dielectric material that is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors because they have a high capacitance to volume ratio and are fairly stable over temperature. The output capacitor must also be selected with the DC bias taken into account. The capacitance value of a capacitor decreases as the DC bias across a capacitor increases. For this example design, a ceramic capacitor with at least a 25 V voltage rating is required to support the maximum input voltage. For this example, one 10 μF and one 4.7 µF 25-V capacitors in parallel have been selected as the VIN and PVIN inputs are tied together so the TPS54622 may operate from a single supply. The input capacitance value determines the input ripple voltage of the regulator. The input voltage ripple can be calculated using Equation 27. Using the design example values, Ioutmax = 6 A, Cin = 14.7 μF, Fsw = 480 kHz, yields an input voltage ripple of 213 mV and a RMS input ripple current of 2.95 A. Ioutmax × 0.25 DVin = Cin × f sw (27) 8.2.2.6 Slow-Start Capacitor Selection The slow-start capacitor determines the minimum amount of time it takes for the output voltage to reach its nominal programmed value during power up. This is useful if a load requires a controlled voltage slew rate. This is also used if the output capacitance is very large and would require large amounts of current to quickly charge the capacitor to the output voltage level. The large currents necessary to charge the capacitor may make the TPS54622 reach the current limit or excessive current draw from the input power supply may cause the input voltage rail to sag. Limiting the output voltage slew rate solves both of these problems. The soft-start capacitor value can be calculated using Equation 28. For the example circuit, the soft-start time is not too critical since the output capacitor value is 100 μF which does not require much current to charge to 3.3 V. The example circuit has the soft-start time set to an arbitrary value of 6 ms which requires a 22-nF capacitor. In TPS54622, Iss is 2.3 uA and Vref is 0.6 V. Tss(ms) × Iss( m A ) C6(nF) = Vref ( V ) (28) 8.2.2.7 Bootstrap Capacitor Selection A 0.1-µF to 1-μF ceramic capacitor must be connected between the BOOT to PH pin for proper operation. TI recommends using a ceramic capacitor with X5R or better grade dielectric. The capacitor should have 10-V or higher voltage rating. 8.2.2.8 Undervoltage Lockout Setpoint The undervoltage lockout (UVLO) can be adjusted using the external voltage divider network of R3 and R4. R3 is connected between VIN and the EN pin of the TPS54622 and R4 is connected between EN and GND . The UVLO has two thresholds, one for power up when the input voltage is rising and one for power down or brownouts when the input voltage is falling. For the example design, the supply should turn on and start switching once the input voltage increases above 6.528 V (UVLO start or enable). After the regulator starts switching, it should continue to do so until the input voltage falls below 6.19 V (UVLO stop or disable). Equation 2 and Equation 3 can be used to calculate the values for the upper and lower resistor values. For the stop voltages specified, the nearest standard resistor value for R3 is 35.7 kΩ and for R4 is 8.06 kΩ. 26 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 8.2.2.9 Output Voltage Feedback Resistor Selection The resistor-divider network R5 and R6 is used to set the output voltage. For the example design, 10 kΩ was selected for R5. Using Equation 29, R6 is calculated as 2.22 kΩ. The nearest standard 1% resistor is 2.21 kΩ. R5 × Vref R6 = Vo - Vref (29) 8.2.2.9.1 Minimum Output Voltage Due to the internal design of the TPS54622, there is a minimum output voltage limit for any given input voltage. The output voltage can never be lower than the internal voltage reference of 0.6 V. Above 0.6 V, the output voltage may be limited by the minimum controllable on-time. The minimum output voltage in this case is given by Equation 30: Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 27 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com Voutmin = Ontimemin × Fsmax (Vinmax + Ioutmin (RDS2min - RDS1min ))- Ioutmin (RL + RDS2min ) where • • • • • • • • Voutmin = minimum achievable output voltage Ontimemin = minimum controllable on-time (135 ns maximum) Fsmax = maximum switching frequency including tolerance Vinmax = maximum input voltage Ioutmin = minimum load current RDS1min = minimum high-side MOSFET ON-resistance (36-32 mΩ typical) RDS2min = minimum low-side MOSFET ON-resistance (19 mΩ typical) RL = series resistance of output inductor (30) 8.2.2.10 Compensation Component Selection There are several industry techniques used to compensate DC-DC regulators. The method presented here is easy to calculate and yields high phase margins. For most conditions, the regulator has a phase margin from 60 to 90 degrees. The method presented here ignores the effects of the slope compensation that is internal to the TPS54622. Since the slope compensation is ignored, the actual crossover frequency is usually lower than the crossover frequency used in the calculations. First, the modulator pole, fpmod, and the ESR zero, fzmod, must be calculated using Equation 31 and Equation 32. For Cout, use a derated value of 75 µF. Use Equation 33 and Equation 34 to estimate a starting point for the closed loop crossover frequency, fco. Then the required compensation components may be derived. For this design example, fpmod is 3.86 kHz and fzmod is 707.4 kHz. Equation 33 is the geometric mean of the modulator pole and the ESR zero and Equation 34 is the geometric mean of the modulator pole and one half the switching frequency. Use a frequency near the lower of these two values as the intended crossover frequency, fco. In this case Equation 33 yields 52.2 kHz and Equation 34 yields 30.4 kHz. The lower value is 30.4 kHz. A slightly higher frequency of 30 kHz is chosen as the intended crossover frequency. Iout f pmod = 2 × p × Vout × Cout (31) f zm od = 1 2 × p × RESR × Cout f co = f pmod × f zmod f co = f pmod × (32) (33) f sw 2 (34) Now the compensation components can be calculated. First calculate the value for R2 which sets the gain of the compensated network at the crossover frequency. Use Equation 35 to determine the value of R2. 2p × f c × Vout × Cout R4 = gmea × Vref × gmps (35) Next calculate the value of C3. Together with R2, C3 places a compensation zero at the modulator pole frequency. Equation 36 to determine the value of C3. Vout × Cout C4 = Iout × R4 (36) Using Equation 35 and Equation 36 the standard values for R4 and C4 are 3.74 kΩ and 0.01 µF. An additional high-frequency pole can be used if necessary by adding a capacitor in parallel with the series combination of R4 and C4. The pole frequency can be placed at the ESR zero frequency of the output capacitor as given by Equation 8. Use Equation 37 to calculate the required capacitor value for C5. RESR × Cout C5 = R4 (37) 28 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 8.2.2.11 Fast Transient Considerations In applications where fast transient responses are very important, Type III frequency compensation can be used instead of the traditional Type II frequency compensation. For more information about Type II and Type III frequency compensation circuits, see Designing Type III Compensation for Current Mode Step-Down Converters and design calculator (SLVC219). 8.2.3 Application Curves VOUT = 100 mV / div (dc coupled, -3.13 V offset) VIN = 5 V / div IOUT = 2 A / div Load step = 1.5 A to 4.5 A Slew rate = 100 mA / µsec VOUT = 1 V / div Time = 200 µsec / div Time = 2 msec / div Figure 30. Load Transient Figure 31. Start-Up With VIN VIN = 5 V / div VIN = 10 V / div VOUT = 2 V / div EN = 2 V / div VOUT = 2 V / div PH = 10 V / div Time = 2 msec / div Time = 2 msec / div Figure 33. Start-Up With PRE-BIAS Figure 32. Start-Up With EN Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 29 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com VOUT = 20 mV / div (ac coupled) VIN = 500 mV / div PH = 5 V / div PH = 5 V / div Time = 1 µsec / div Time = 1 µsec / div Figure 34. Output Voltage Ripple With No Load Figure 35. Input Voltage Ripple With Full Load 60 180 50 150 0.4 0.3 30 90 20 60 10 30 0 0 Gain -10 -30 -20 -60 -30 -90 -40 -120 -50 -150 Output Voltage Deviation - % 120 Phase - Degrees Gain - dB Phase 40 0.2 IOUT = 3 A 0.1 0 -0.1 -0.2 -0.3 -60 100 1000 10000 -0.4 -180 1000000 100000 8 9 10 11 Frequency - Hz Figure 36. Closed Loop Response 13 12 Input Voltage - V 14 15 16 Figure 37. Line Regulation 0.4 10 10 Vout 0.3 1 1 0.1 0 -0.1 0.1 0.1 Ideal Vsense Vsense 0.01 0.01 0.001 0.001 0.0001 0.0001 Vsense Voltage - V VIN = 12 V 0.2 Output Voltage - V Output Voltage Deviation - % 17 -0.2 -0.3 -0.4 0 1 2 3 Output Current - A 4 5 6 0.00001 0.001 0.1 1 10 Track In Voltage - V Figure 39. Tracking Performance Figure 38. Load Regulation 30 0.00001 0.01 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 150 TA - Maximum Ambient Temperature - °C TA - Maximum Ambient Temperature - °C 150 125 125 100 100 75 VIN = 12 V, VOUT = 3.3 V, Fsw = 480 kHz, room temp, no air flow 50 75 50 25 25 0 1 2 3 4 Load Current - A 5 6 Figure 40. Maximum Ambient Temperature vs Load Current 0 0.5 1 1.5 2 2.5 3 3.5 PD - IC Power Dissipation - W 4 Figure 41. Maximum Ambient Temperature vs IC Power Dissipation 100 150 TA = room temperature, no air flow 95 125 90 85 VIN = 8 V Efficiency - % TJ - Junction Temperature - °C Tjmax = 150 °C, no air flow 100 75 80 VIN = 12 V 75 VIN = 17 V 70 65 50 60 55 25 0 0.5 1 1.5 2 2.5 3 3.5 Pic - IC Power Dissipation - W 50 4 0 Figure 42. Junction Temperature vs IC Power Dissipation 1 3 Output Current - A 2 4 5 6 Figure 43. Efficiency vs Load Current 100 VIN = 12 V VIN = 17 V 90 80 VIN = 8 V VOUT = 2 V / div Efficiency - % 70 60 PH = 10 V / div 50 Inductor Current = 5 A / div 40 30 20 10 0 0.01 Time = 20 msec / div 0.1 10.0 1.0 Output Current - A Figure 44. Efficiency vs Load Current Figure 45. Hiccup Mode Current Limit Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 31 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com 9 Power Supply Recommendations The TPS54622 is designed to operate from an input voltage supply range from 4.5 V to 17 V. This supply voltage must be well regulated. Power supplies must be well bypassed for proper electrical performance. This includes a minimum of one 4.7-µF (after derating) ceramic capacitor, type X5R or better from PVIN to GND, and from VIN to GND. Additional local ceramic bypass capacitance may be required in systems with small input ripple specifications, in addition to bulk capacitance if the TPS54622 device is located more than a few inches away from its input power supply. In systems with an auxiliary power rail available, the power stage input, PVIN, and the analog power input, VIN, may operate from separate input supplies. See Figure 46 for recommended bypass capacitor placement. 10 Layout 10.1 Layout Guidelines • • • • • • • • • • • • • • • • • • • • 32 Layout is a critical portion of good power supply design. See Figure 46 for a PCB layout example. The top layer contains the main power traces for VIN, VOUT, and VPHASE. Also on the top layer are connections for the remaining pins of the TPS54622 and a large top-side area filled with ground. Connect the top layer ground area to the internal ground layers using vias at the input bypass capacitor, the output filter capacitor, and directly under the TPS54622 device to provide a thermal path from the exposed thermal pad land to ground Tie the GND pin directly to the power pad under the IC and the power pad. For operation at full rated load, the top side ground area together with the internal ground plane, must provide adequate heat dissipating area. There are several signals paths that conduct fast changing currents or voltages that can interact with stray inductance or parasitic capacitance to generate noise or degrade the power supplies performance. To help eliminate these problems, the PVIN pin should be bypassed to ground with a low ESR ceramic bypass capacitor with X5R or X7R dielectric. Care should be taken to minimize the loop area formed by the bypass capacitor connections, the PVIN pins, and the ground connections. The VIN pin must also be bypassed to ground using a low ESR ceramic capacitor with X5R or X7R dielectric. Make sure to connect this capacitor to the quite analog ground trace rather than the power ground trace of the PVIn bypass capacitor. Since the PH connection is the switching node, the output inductor should be located close to the PH pins, and the area of the PCB conductor minimized to prevent excessive capacitive coupling. The output filter capacitor ground should use the same power ground trace as the PVIN input bypass capacitor. Try to minimize this conductor length while maintaining adequate width. The small signal components should be grounded to the analog ground path as shown. The RT/CLK pin is sensitive to noise so the RT resistor must be located as close as possible to the IC and routed with minimal lengths of trace. The additional external components can be placed approximately as shown. It may be possible to obtain acceptable performance with alternate PCB layouts, however, this layout has been shown to produce good results and is meant as a guideline. Land pattern and stencil information is provided in the data sheet addendum. The dimension and outline information is for the standard RHL (S-PVQFN-N14) package. There may be slight differences between the provided data and actual lead frame used on the TPS54622RHL package. Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 10.2 Layout Examples TOPSIDE GROUND AREA FREQUENCY SET RESISTOR PVIN INPUT BYPASS CAPACITOR RT/CLK PWRGD GND GND OUTPUT FILTER CAPACITOR BOOT CAPACITOR BOOT EXPOSED THERMAL PAD AREA PVIN PH PVIN EN VIN SS/TR VSENSE PVIN OUTPUT INDUCTOR PH VOUT PH COMP VIN SLOW START CAPACITOR VIN INPUT BYPASS CAPACITOR FEEDBACK RESISTORS UVLO SET RESISTORS COMPENSATION NETWORK ANALOG GROUND TRACE 0.010 in. Diameter Thermal VIA to Ground Plane VIA to Ground Plane Etch Under Component Figure 46. PCB Layout Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 33 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com Layout Examples (continued) Figure 47. Ultra-Small PCB Layout Using TPS54622 (PMP4854-2) 10.3 Estimated Circuit Area The estimated printed-circuit-board area for the components used in the design of Figure 29 is 0.58 in2 (374mm2). This area does not include test points or connectors. 34 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 TPS54622 www.ti.com SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 11 Device and Documentation Support 11.1 Device Support 11.1.1 Third-Party Products Disclaimer TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE. 11.1.2 Development Support For the Design Calculator, see SLVC219. 11.1.3 Custom Design With WEBENCH® Tools Click here to create a custom design using the TPS54622 device with the WEBENCH® Power Designer. 1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements. 2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial. 3. Compare the generated design with other possible solutions from Texas Instruments. The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time pricing and component availability. In most cases, these actions are available: • Run electrical simulations to see important waveforms and circuit performance • Run thermal simulations to understand board thermal performance • Export customized schematic and layout into popular CAD formats • Print PDF reports for the design, and share the design with colleagues Get more information about WEBENCH tools at www.ti.com/WEBENCH. 11.2 Documentation Support 11.2.1 Related Documentation For related documentation, see the following: Designing Type III Compensation for Current Mode Step-Down Converters, SLVA352 11.3 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 11.4 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.5 Trademarks E2E is a trademark of Texas Instruments. WEBENCH is a registered trademark of Texas Instruments. Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 35 TPS54622 SLVSA70F – MARCH 2011 – REVISED OCTOBER 2017 www.ti.com 11.5 Trademarks (continued) All other trademarks are the property of their respective owners. 11.6 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.7 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 36 Submit Documentation Feedback Copyright © 2011–2017, Texas Instruments Incorporated Product Folder Links: TPS54622 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS54622RHLR ACTIVE VQFN RHL 14 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 150 54622 TPS54622RHLT ACTIVE VQFN RHL 14 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 150 54622 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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TPS54622RHLT
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