TPS62810-Q1, TPS62811-Q1, TPS62812-Q1, TPS62813-Q1
TPS62810-Q1, TPS62811-Q1,
TPS62812-Q1,
TPS62813-Q1
SLVSDU1H – AUGUST
2018 – REVISED
APRIL 2021
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SLVSDU1H – AUGUST 2018 – REVISED APRIL 2021
TPS6281x-Q1 2.75-V to 6-V Adjustable-Frequency Step-Down Converter
1 Features
3 Description
•
The TPS6281x-Q1 is family of pin-to-pin 1-A, 2A, 3-A, and 4-A synchronous step-down DC/DC
converters. All devices offer high efficiency and ease
of use. The TPS6281x-Q1 family is based on a
peak current mode control topology. The TPS6281xQ1 is designed for automotive applications such as
infotainment and advanced driver assistance systems.
Low resistive switches allow up to 4-A continuous
output current at high ambient temperature. The
switching frequency is externally adjustable from 1.8
MHz to 4 MHz and can also be synchronized to
an external clock in the same frequency range. In
PWM/PFM mode, the TPS6281x-Q1 automatically
enter Power Save Mode at light loads to maintain
high efficiency across the whole load range. The
TPS6281x-Q1 provide 1% output voltage accuracy
in PWM mode which helps design a power supply
with high output voltage accuracy. The SS/TR pin
allows setting the start-up time or forming tracking
of the output voltage to an external source. This
allows external sequencing of different supply rails
and limiting the inrush current during start-up.
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
AEC-Q100 qualified for automotive applications
– Device temperature grade 1:
–40°C to +125°C TA
Functional Safety-Capable
– Documentation available to aid functional safety
system design
Input voltage range: 2.75 V to 6 V
Family of 1 A, 2 A, 3 A and 4 A
Quiescent current 15-µA typical
Output voltage from 0.6 V to 5.5 V
Output voltage accuracy ±1% (PWM operation)
Adjustable soft start
Forced PWM or PWM and PFM operation
Adjustable switching frequency of
1.8 MHz to 4 MHz
Precise ENABLE input allows
– User-defined undervoltage lockout
– Exact sequencing
100% duty cycle mode
Active output discharge
Spread spectrum clocking - optional
Power good output with window comparator
Package with wettable flanks
2 Applications
•
•
•
•
•
The TPS6281x-Q1 is available in a 3-mm × 2-mm
VQFN package with wettable flanks.
Device Information
Infotainment head unit
Hybrid and reconfigurable cluster
Telematics control unit
Surround view ECU, ADAS sensor fusion
External amplifier
PART NUMBER
PACKAGE(1)
BODY SIZE (NOM)
VQFN
3 mm × 2 mm
TPS62810-Q1
TPS62811-Q1
TPS62812-Q1
TPS62813-Q1
(1)
VIN
2.75 V - 6 V
TPS62810-Q1
VIN
100
L
0.47 mH
VOUT
95
SW
90
R1
EN
85
FB
MODE/SYNC
R2
COMP/FSET
SS/TR
CSS
CFF
PG
R3
COUT
2 x 22 mF
+ 10 mF
Efficiency (%)
CIN
22 mF
RCF
For all available packages, see the orderable addendum at
the end of the data sheet.
80
75
70
65
60
GND
Simplified Schematic
VIN = 4.0 V
VIN = 5.0 V
VIN = 6.0 V
55
50
100P
1m
10m
100m
Output Current (A)
1
4
D002
Efficiency vs Output Current; VOUT = 3.3 V; PWM/
PFM; fS = 2.25 MHz
An©IMPORTANT
NOTICEIncorporated
at the end of this data sheet addresses availability, warranty, changes, use in
safety-critical
applications,
Copyright
2021 Texas Instruments
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1
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SLVSDU1H – AUGUST 2018 – REVISED APRIL 2021
Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................4
6 Pin Configuration and Functions...................................5
7 Specifications.................................................................. 6
7.1 Absolute Maximum Ratings ....................................... 6
7.2 ESD Ratings .............................................................. 6
7.3 Recommended Operating Conditions ........................6
7.4 Thermal Information ...................................................6
7.5 Electrical Characteristics ............................................7
7.6 Typical Characteristics................................................ 9
8 Parameter Measurement Information.......................... 10
8.1 Schematic................................................................. 10
9 Detailed Description......................................................12
9.1 Overview................................................................... 12
9.2 Functional Block Diagram......................................... 12
9.3 Feature Description...................................................13
9.4 Device Functional Modes..........................................15
10 Application and Implementation................................ 18
10.1 Application Information........................................... 18
10.2 Typical Application.................................................. 20
10.3 System Examples................................................... 31
11 Power Supply Recommendations..............................34
12 Layout...........................................................................35
12.1 Layout Guidelines................................................... 35
12.2 Layout Example...................................................... 35
13 Device and Documentation Support..........................36
13.1 Device Support....................................................... 36
13.2 Documentation Support.......................................... 36
13.3 Receiving Notification of Documentation Updates..36
13.4 Support Resources................................................. 36
13.5 Trademarks............................................................. 36
13.6 Electrostatic Discharge Caution..............................36
13.7 Glossary..................................................................36
14 Mechanical, Packaging, and Orderable
Information.................................................................... 36
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision G (March 2021) to Revision H (April 2021)
Page
• Added device version to Device Comparison Table .......................................................................................... 4
Changes from Revision F (November 2020) to Revision G (March 2021)
Page
• Added new voltage spins to Device Comparison Table .....................................................................................4
• Added feedback voltage for fixed voltage version TPS6281326........................................................................ 7
• Added feedback voltage for fixed voltage version TPS628100M....................................................................... 7
Changes from Revision E (April 2020) to Revision F (November 2020)
Page
• Updated the numbering format for tables, figures and cross-references throughout the document. .................1
• Added functional safety bullet ............................................................................................................................1
• Added new voltage spins to Device Comparison Table .....................................................................................4
• Added feedback voltage for fixed voltage version TPS6281126........................................................................ 7
• Added feedback voltage for fixed voltage version TPS6281228........................................................................ 7
• Added feedback voltage for fixed voltage version TPS6281109........................................................................ 7
• Added feedback voltage for fixed voltage version TPS628132D........................................................................7
• Added feedback voltage for fixed voltage version TPS628132M....................................................................... 7
• Added feedback voltage for fixed voltage version TPS628113H........................................................................7
Changes from Revision D (December 2019) to Revision E (April 2020)
Page
• Added TPS628122GQWRWYRQ1 into Device Comparison Table ...................................................................4
• Added feedback voltage for fixed voltage version TPS628122G....................................................................... 7
Changes from Revision C (August 2019) to Revision D (December 2019)
Page
• Added Functional safety capable information and link ...................................................................................... 1
• Added new voltage spins to Device Comparison Table .....................................................................................4
• Changed duty cycle for external synchronization to allow a wider range........................................................... 7
• Added feedback voltage for fixed voltage versions TPS6281206, TPS628110A, TPS628112A, TPS6281008,
TPS628112M, TPS628120M ............................................................................................................................. 7
2
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•
SLVSDU1H – AUGUST 2018 – REVISED APRIL 2021
Changed description for Power Save Mode Operation.................................................................................... 15
Changes from Revision B (June 2019) to Revision C (December 2019)
Page
• Changed marketing status from Advance Information to initial release for the TPS62811-Q1 and TPS62812Q1....................................................................................................................................................................... 1
• Changed Test Condition for Tracking Gain......................................................................................................... 7
• Changed Test Condition for Tracking Offset....................................................................................................... 7
• Added feedback voltage for fixed voltage version TPS6281208........................................................................ 7
• Added FB input current for fixed voltage versions.............................................................................................. 7
• Added feedback voltage accuracy for fixed voltage versions............................................................................. 7
• Deleted Preview label for Systems Example ................................................................................................... 31
Changes from Revision A (March 2019) to Revision B (June 2019)
Page
• Changed marketing status from Advance Information to initial release for the TPS62810-Q1 and TPS62813Q1....................................................................................................................................................................... 1
• Changed parameter name from RFSET to RCF .................................................................................................. 6
• Changed minimum value for UVLO threshold for falling input voltage ............................................................. 7
• Deleted high-side MOSFET leakage current at TJ = 85°C................................................................................. 7
• Deleted low-side MOSFET leakage current at TJ = 85°C...................................................................................7
• Changed max value for high-side MOSFET current limit of TPS62810 and TPS62813.................................... 7
• Changed min / max value for high-side MOSFET current limit of TPS62812 and TPS62811........................... 7
• Changed min / max value for switching frequency tolerance for fS = 1.8 MHz to 4 MHz...................................7
• Changed min / max value for feedback voltage accuracy with voltage tracking................................................7
• Deleted start-up delay time for VIn ≥ 3.1 V........................................................................................................7
Changes from Revision * (August 2018) to Revision A (March 2019)
Page
• Added planned device spins to Device Comparison Table ................................................................................4
• Changed max inductance in Recommended Operating Conditions for the frequency range up to 3.5 MHz .... 6
• Changed max inductance in Recommended Operating Conditions for the frequency range above 3.5 MHz....6
• Deleted min/max value for Thermal Shutdown Temperature .............................................................................7
• Changed max value for high-side MOSFET leakage current at TJ = 85°C .......................................................7
• Changed max value for high-side MOSFET leakage current............................................................................. 7
• Changed ax value for Low-Side MOSFET leakage current at TJ = 85°C........................................................... 7
• Changed max value for low-side MOSFET leakage current...............................................................................7
• Added Added spec for SW leakage...................................................................................................................7
• Changed min / max value for PWM switching frequency tolerance for fS = 3 MHz to 4 MHz.............................7
• Changed Changed load regulation from 0.025%/V to 0.05%/V.........................................................................7
• Changed equation for compensation setting 2 ................................................................................................ 13
• Changed RCF range for comp setting 2 in Table 9-1 ........................................................................................13
• Changed RCF range for comp setting 2 in Table 9-2 ........................................................................................13
• Changed CFF from 22 pF to 10 pF in Table 10-2 and all schematics ...............................................................20
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SLVSDU1H – AUGUST 2018 – REVISED APRIL 2021
5 Device Comparison Table
DEVICE NUMBER
OUTPUT
CURRENT
Vout
DISCHARGE
FOLDBACK
CURRENT LIMIT
SPREAD SPECTRUM
CLOCKING (SSC)
OUTPUT VOLTAGE
TPS62811QWRWYRQ1
1A
ON
OFF
OFF
adjustable
TPS6281120QWRWYRQ1
1A
ON
OFF
ON
adjustable
TPS6281126QWRWYRQ1
1A
ON
OFF
ON
fixed 1.0 V
TPS6281109QWRWYRQ1
1A
ON
OFF
OFF
fixed 1.15 V
TPS628110AQWRWYRQ1
1A
ON
OFF
OFF
fixed 1.2 V
TPS628112AQWRWYRQ1
1A
ON
OFF
ON
fixed 1.2 V
TPS628112MQWRWYRQ1
1A
ON
OFF
ON
fixed 1.8 V
TPS628113HQWRWYRQ1
1A
ON
OFF
ON
fixed 3.3 V
TPS62812QWRWYRQ1
2A
ON
OFF
OFF
adjustable
TPS6281220QWRWYRQ1
2A
ON
OFF
ON
adjustable
TPS6281206QWRWYRQ1
2A
ON
OFF
OFF
fixed 1.0 V
TPS6281208QWRWYRQ1
2A
ON
OFF
OFF
fixed 1.1 V
TPS6281228QWRWYRQ1
2A
ON
OFF
ON
fixed 1.1 V
TPS628122GQWRWYRQ1
2A
ON
OFF
ON
fixed 1.5 V
TPS628120MQWRWYRQ1
2A
ON
OFF
OFF
fixed 1.8 V
TPS62813QWRWYRQ1
3A
ON
OFF
OFF
adjustable
TPS6281320QWRWYRQ1
3A
ON
OFF
ON
adjustable
TPS6281326QWRWYRQ1
3A
ON
OFF
ON
fixed 1.0 V
TPS628132DQWRWYRQ1
3A
ON
OFF
ON
fixed 1.35 V
TPS628132MQWRWYRQ1
3A
ON
OFF
ON
fixed 1.8 V
TPS62810QWRWYRQ1
4A
ON
OFF
OFF
adjustable
TPS6281020QWRWYRQ1
4A
ON
OFF
ON
adjustable
TPS6281008QWRWYRQ1
4A
ON
OFF
OFF
fixed 1.1 V
TPS628100MQWRWYRQ1
4A
ON
OFF
OFF
fixed 1.8 V
(1) PREVIEW
4
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SLVSDU1H – AUGUST 2018 – REVISED APRIL 2021
6 Pin Configuration and Functions
bottom view
top view
7
8
8
7
COMP/
FSET
EN
6
9
PG
VIN
9
6
SS/TR
GND
SW
EN
GND
SW
VIN
3
2
PG
FB
2
1
3
4
5
5
4
1
Figure 6-1. RWY Package 9 Pin (VQFN) Top View
Table 6-1. Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
EN
8
I
This is the enable pin of the device. Connect to logic low to disable the device. Pull high to
enable the device. Do not leave this pin unconnected.
FB
5
I
Voltage feedback input, connect the resistive output voltage divider to this pin. For the fixed
voltage versions, connect the FB pin directly to the output voltage.
GND
4
MODE/SYNC
1
Ground pin
I
The device runs in PFM/PWM mode when this pin is pulled low. If the pin is pulled high, the
device runs in forced PWM mode. Do not leave this pin unconnected. The mode pin can
also be used to synchronize the device to an external frequency. See the Section 7 for the
detailed specification of the digital signal applied to this pin for external synchronization.
COMP/FSET
7
I
Device compensation and frequency set input. A resistor from this pin to GND defines
the compensation of the control loop as well as the switching frequency if not externally
synchronized. If the pin is tied to GND or VIN, the switching frequency is set to 2.25 MHz.
Do not leave this pin unconnected.
PG
9
O
Open drain power good output. Low impedance when not "power good", high impedance
when "power good". This pin can be left open or be tied to GND when not used.
SS/TR
6
I
Soft-Start / Tracking pin. A capacitor connected from this pin to GND defines the rise time
for the internal reference voltage. The pin can also be used as an input for tracking and
sequencing - see the Section 9.4.7 section.
SW
3
This is the switch pin of the converter and is connected to the internal Power MOSFETs.
VIN
2
Power supply input. Connect the input capacitor as close as possible between pin VIN and
GND.
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
Pin voltage range(1)
MIN
MAX
VIN
-0.3
6.5
SW
-0.3
VIN+0.3
V
-3
10
V
V
SW (transient for less than 10 ns)(2)
Pin voltage range(1)
(2)
V
FB
-0.3
4
PG, SS/TR, COMP/FSET
-0.3
VIN+0.3
V
EN, MODE/SYNC
-0.3
6.5
V
-65
150
°C
Storage temperature, Tstg
(1)
UNIT
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
While switching
7.2 ESD Ratings
VALUE
V(ESD)
(1)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002(1)
±2000
Charged-device model (CDM), per AEC Q100-011
±750
UNIT
V
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 Recommended Operating Conditions
MIN
VIN
Supply voltage range
NOM
6
VOUT
Output voltage range
L
Effective inductance for a switching frequency of 1.8 MHz to 3.5 MHz
0.32
0.47
L
Effective inductance for a switching frequency of 3.5 MHz to 4 MHz
0.25
COUT
Effective output capacitance for 1A and 2A version(1)
15
COUT
Effective output capacitance for 3A and 4A version (1)
CIN
Effective input
0.6
capacitance(1)
RCF
TJ
(1)
MAX
2.75
Operating junction temperature
UNIT
V
5.5
V
0.9
µH
0.33
0.9
µH
22
470
µF
27
47
470
µF
5
10
4.5
100
kΩ
-40
+150
°C
µF
The values given for the capacitors in the table are effective capacitance, which includes the DC bias effect. Due to the DC bias
effect of ceramic capacitors, the effective capacitance is lower than the nominal value when a voltage is applied. Please check the
manufacturer´s DC bias curves for the effective capacitance vs DC voltage applied. Further restrictions may apply. Please see the
feature description for COMP/FSET about the output capacitance vs compensation setting and output voltage.
7.4 Thermal Information
TPS6281x-Q1
THERMAL METRIC(1)
RWY
UNIT
9 PINS
6
RθJA
Junction-to-ambient thermal resistance
71.1
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
37.2
°C/W
RθJB
Junction-to-board thermal resistance
16.4
°C/W
ψJT
Junction-to-top characterization parameter
0.9
°C/W
ψJB
Junction-to-board characterization parameter
16.1
°C/W
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TPS6281x-Q1
THERMAL METRIC(1)
RWY
UNIT
9 PINS
RθJC(bot)
(1)
Junction-to-case (bottom) thermal resistance
n/a
°C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Electrical Characteristics
over operating junction temperature (TJ = -40 °C to +150 °C) and VIN = 2.75 V to 6 V. Typical values at VIN = 5 V and TJ = 25
°C. (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
IQ
Operating Quiescent Current
EN = high, IOUT= 0 mA, Device not switching,
TJ= 125 °C
IQ
Operating Quiescent Current
EN = high, IOUT= 0 mA, Device not switching
ISD
Shutdown Current
EN = 0 V, at TJ= 125 °C
ISD
Shutdown Current
EN = 0 V, Nominal value at TJ= 25 °C,
Max value at TJ= 150 °C
VUVLO
Undervoltage Lockout
Threshold
TSD
Thermal Shutdown
Temperature
21
15
µA
30
µA
18
µA
1.5
26
µA
Rising Input Voltage
2.5
2.6
2.75
V
Falling Input Voltage
2.25
2.5
2.6
V
Rising Junction Temperature
170
Thermal Shutdown Hysteresis
°C
15
CONTROL (EN, SS/TR, PG, MODE/SYNC)
VIH
High Level Input Voltage for
MODE/SYNC Pin
VIL
Low Level Input Voltage for
MODE/SYNC Pin
fSYNC
Frequency Range on MODE/ requires a resistor from COMP/FSET to GND, see application
SYNC Pin for Synchronization section
1.1
V
0.3
Duty Cycle of Synchronization
Signal at MODE/SYNC Pin
1.8
20%
Time to Lock to External
Frequency
4
50%
V
MHz
80%
50
µs
VIH
Input Threshold Voltage for
EN pin; Rising Edge
1.06
1.1
1.15
V
VIL
Input Threshold Voltage for
EN pin; Falling Edge
0.96
1.0
1.05
V
ILKG
Input Leakage Current for EN,
VIH = VIN or VIL= GND
MODE/SYNC
150
nA
2.5
kΩ
Resistance from COMP/FSET
internal frequency setting with f = 2.25 MHz
to GND for Logic Low
VTH_PG
0
voltage on COMP/FSET for
logic high
internal frequency setting with f = 2.25 MHz
UVP Power Good Threshold
Voltage; dc Level
Rising (%VFB)
92%
95%
98%
UVP Power Good Threshold
Voltage; dc Level
Falling (%VFB)
87%
90%
93%
OVP Power Good Threshold;
dc Level
Rising (%VFB)
107%
110%
113%
OVP Power Good Threshold;
dc Level
Falling (%VFB)
104%
107%
111%
Power Good De-glitch Time
for a high level to low level transition on power good
VOL_PG
Power Good Output Low
Voltage
IPG = 2 mA
ILKG_PG
Input Leakage Current (PG)
VPG = 5 V
ISS/TR
SS/TR Pin Source Current
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VIN
V
40
0.07
2.1
2.5
µs
0.3
V
100
nA
2.8
µA
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over operating junction temperature (TJ = -40 °C to +150 °C) and VIN = 2.75 V to 6 V. Typical values at VIN = 5 V and TJ = 25
°C. (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
Tracking Gain
VFB / VSS/TR for nominal VFB = 0.6 V
Tracking Offset
feedback voltage with VSS/TR = 0 V for nominal VFB = 0.6 V
17
MAX
UNIT
1
mV
POWER SWITCH
RDS(ON)
High-Side MOSFET ONResistance
VIN ≥ 5 V
37
60
mΩ
RDS(ON)
Low-Side MOSFET ONResistance
VIN ≥ 5 V
15
35
mΩ
High-Side MOSFET leakage
current
VIN = 6 V; V(SW) = 0 V
30
µA
Low-Side MOSFET leakage
current
V(SW) = 6 V
55
µA
30
µA
SW leakage
V(SW) = 0.6 V; current into SW pin
ILIMH
High-Side MOSFET Current
Limit
-0.025
dc value, for TPS62810; VIN = 3 V to 6 V
4.8
5.6
6.55
A
ILIMH
High-Side MOSFET Current
Limit
dc value, for TPS62813; VIN = 3V to 6 V
3.9
4.5
5.25
A
ILIMH
High-Side MOSFET Current
Limit
dc value, for TPS62812; VIN = 3V to 6 V
2.8
3.4
4.2
A
ILIMH
High-Side MOSFET Current
Limit
dc value, for TPS62811; VIN = 3V to 6 V
2.0
2.6
3.25
A
ILIMNEG
Negative Valley Current Limit
dc value
fS
PWM Switching Frequency
Range
-1.8
A
1.8
2.25
4
MHz
with COMP/FSET tied to VIN or GND
2.025
2.25
2.475
MHz
PWM Switching Frequency
Tolerance
using a resistor from COMP/FSET to GND, fs = 1.8 MHz to 4
MHz
-19%
ton,min
Minimum on-time of HS FET
TJ = -40 °C to 125 °C, VIN = 3.3 V
50
ton,min
Minimum on-time of LS FET
VIN = 3.3 V
30
ns
Feedback Voltage
adjustable output voltage versions
0.6
V
VFB
Feedback Voltage
fixed output voltage
TPS6281206, TPS6281126,
TPS6281326
1.0
V
VFB
Feedback Voltage
fixed output voltage
TPS6281208, TPS6281008,
TPS6281228
1.1
V
VFB
Feedback Voltage
fixed output voltage
TPS6281109
1.15
V
VFB
Feedback Voltage
fixed output voltage
TPS628110A, TPS628112A
1.2
V
VFB
Feedback Voltage
fixed output voltage
TPS628132D
1.35
V
VFB
Feedback Voltage
fixed output voltage
TPS628122G
1.5
V
VFB
Feedback Voltage
fixed output voltage
TPS628112M, TPS628120M,
TPS628132D, TPS628100M,
TPS628132M
1.8
V
VFB
Feedback VoltageVoltage
fixed output voltage
TPS628113H
3.3
V
ILKG_FB
FB Input Leakage Current for
Adjustable Voltage Versions
VFB = 0.6 V
1
ILKG_FB
FB Input Current for Fixed
Voltage Versions
VFB voltage at target output
voltage
1
VFB
Feedback Voltage Accuracy
for Adjustable Voltage
Versions
VIN ≥ VOUT + 1 V
PWM Switching Frequency
fS
18%
75
ns
OUTPUT
VFB
8
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PWM mode
-1%
70
nA
µA
1%
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over operating junction temperature (TJ = -40 °C to +150 °C) and VIN = 2.75 V to 6 V. Typical values at VIN = 5 V and TJ = 25
°C. (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VFB
Feedback Voltage Accuracy
for Fixed Voltage Versions
VFB
MIN
TYP
MAX
VIN ≥ VOUT + 1 V
PWM mode, Tj = -40°C to
125°C
-1%
1%
Feedback Voltage Accuracy
for Fixed Voltage Versions
VIN ≥ VOUT + 1 V
PWM mode
-1%
1.3%
VFB
Feedback Voltage Accuracy
VIN ≥ VOUT + 1 V;
VOUT ≥ 1.5 V
PFM mode;
Co,eff ≥ 22 µF,
L = 0.47 µH
-1%
2%
VFB
Feedback Voltage Accuracy
1 V ≤ VOUT < 1.5 V
PFM mode;
Co,eff ≥ 47 µF,
L = 0.47 µH
-1%
2.5%
VFB
Feedback Voltage Accuracy
with Voltage Tracking
VIN ≥ VOUT + 1 V;
VSS/TR = 0.3 V
PWM mode
-1%
7%
Load Regulation
PWM mode operation
0.05
Line Regulation
PWM mode operation, IOUT= 1 A, VIN ≥ VOUT + 1 V
0.02
%/A
%/V
Output Discharge Resistance
tdelay
Start-up Delay Time
IOUT = 0 mA, Time from EN=high to start switching; VIN
applied already
tramp
Ramp time; SS/TR Pin Open
IOUT = 0 mA, Time from first switching pulse until 95% of
nominal output voltage; device not in current limit
UNIT
50
Ω
135
250
470
µs
100
150
200
µs
80
76
72
68
64
60
56
52
48
44
40
36
32
28
24
20
-40
50
VIN
VIN
VIN
VIN
VIN
=
=
=
=
=
2.7V
3.3V
4.0V
5.0V
6.0V
VIN
VIN
VIN
VIN
VIN
46
42
38
Rds(on) (m:)
Rds(on) (m:)
7.6 Typical Characteristics
=
=
=
=
=
2.7V
3.3V
4.0V
5.0V
6.0V
34
30
26
22
18
14
25
85
Junction Temperature (°C)
125
Figure 7-1. Rds(on) of High-side Switch
Copyright © 2021 Texas Instruments Incorporated
10
-40
150
D002
25
85
Junction Temperature (°C)
125
150
D002
Figure 7-2. Rds(on) of Low-side Switch
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8 Parameter Measurement Information
8.1 Schematic
VIN
2.75 V - 6 V
TPS62810-Q1
VIN
L
0.47 mH
VOUT
SW
CIN
22 mF
R1
EN
CFF
FB
MODE/SYNC
R2
R3
COMP/FSET
SS/TR
RCF
CSS
COUT
2 x 22 mF
+ 10 mF
PG
GND
Figure 8-1. Measurement Setup for TPS62810-Q1 and TPS62813-Q1
Table 8-1. List of Components
(1)
REFERENCE
DESCRIPTION
MANUFACTURER (1)
IC
TPS62810-Q1 or TPS62813-Q1
Texas Instruments
L
0.47 µH inductor; XEL4030-471MEB
Coilcraft
CIN
22 µF / 10 V; GCM31CR71A226KE02L
Murata
COUT
2 x 22 µF / 10 V; GCM31CR71A226KE02L
+ 1 x 10 µF 6.3 V; GCM188D70J106ME36
Murata
CSS
4.7 nF (equal to 1-ms start-up ramp)
Any
RCF
8.06 kΩ
Any
CFF
10 pF
Any
R1
Depending on VOUT
Any
R2
Depending on VOUT
Any
R3
100 kΩ
Any
See the Third-party Products Disclaimer.
VIN
2.75 V - 6 V
TPS62812-Q1
VIN
R1
EN
CFF
FB
MODE/SYNC
R2
COMP/FSET
SS/TR
CSS
VOUT
SW
CIN
22 mF
RCF
L
0.47 mH
R3
COUT
1 x 22 mF
+ 10 mF
PG
GND
Figure 8-2. Measurement Setup for TPS62812-Q1 and TPS62811-Q1
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Table 8-2. List of Components
REFERENCE
DESCRIPTION
MANUFACTURER (1)
IC
TPS62812-Q1 or TPS62811-Q1
Texas Instruments
L
0.56-µH inductor; XEL4020-561MEB
Coilcraft
CIN
22 µF / 10 V; GCM31CR71A226KE02L
Murata
COUT
1 x 22 µF / 10 V; GCM31CR71A226KE02L
+ 1 x 10 µF 6.3 V; GCM188D70J106ME36
Murata
CSS
4.7 nF (equal to 1-ms start-up ramp)
Any
RCF
8.06 kΩ
Any
CFF
10 pF
Any
R1
Depending on VOUT
Any
R2
Depending on VOUT
Any
R3
100 kΩ
Any
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9 Detailed Description
9.1 Overview
The TPS6281x-Q1 synchronous switch mode DC/DC converters are based on a peak current mode control
topology. The control loop is internally compensated. To optimize the bandwidth of the control loop to the
wide range of output capacitance that can be used with TPS6281x-Q1, one of three internal compensation
settings can be selected. See Section 9.3.2. The compensation setting is selected either by a resistor from
COMP/FSET to GND, or by the logic state of this pin. The regulation network achieves fast and stable operation
with small external components and low ESR ceramic output capacitors. The device can be operated without
a feedforward capacitor on the output voltage divider, however, using a typically 10-pF feedforward capacitor
improves transient response.
The devices support forced fixed frequency PWM operation with the MODE pin tied to a logic high level. The
frequency is defined as either 2.25 MHz internally fixed when COMP/FSET is tied to GND or VIN, or in a
range of 1.8 MHz to 4 MHz defined by a resistor from COMP/FSET to GND. Alternatively, the devices can
be synchronized to an external clock signal in a range from 1.8 MHz to 4 MHz, applied to the MODE pin
with no need for additional passive components. External synchronization is only possible if a resistor from
COMP/FSET to GND is used. If COMP/FSET is directly tied to GND or VIN, the TPS6281x-Q1 cannot be
synchronized externally. An internal PLL allows to change from internal clock to external clock during operation.
The synchronization to the external clock is done on a falling edge of the clock applied at MODE to the
rising edge on the SW pin. This allows a roughly 180° phase shift when the SW pin is used to generate
the synchronization signal for a second converter. When the MODE pin is set to a logic low level, the device
operates in power save mode (PFM) at low output current and automatically transfers to fixed frequency PWM
mode at higher output current. In PFM mode, the switching frequency decreases linearly based on the load to
sustain high efficiency down to very low output current.
9.2 Functional Block Diagram
SW
VIN
Bias
Regulator
Gate Drive and Control
Oscillator
Izero
_
EN
+
+
_
Ipeak
MODE
gm
+
PG
Device
Control
Bandgap
GND
_
+
-
FB
SS/TR
Thermal
Shutdown
COMP/FSET
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9.3 Feature Description
9.3.1 Precise Enable
The voltage applied at the Enable pin of the TPS6281x-Q1 is compared to a fixed threshold of 1.1 V for a rising
voltage. This allows to drive the pin by a slowly changing voltage and enables the use of an external RC network
to achieve a power-up delay.
The Precise Enable input provides a user-programmable undervoltage lockout by adding a resistor divider to the
input of the Enable pin.
The enable input threshold for a falling edge is typically 100 mV lower than the rising edge threshold. The
TPS6281x-Q1 starts operation when the rising threshold is exceeded. For proper operation, the EN pin must be
terminated and must not be left floating. Pulling the EN pin low forces the device into shutdown, with a shutdown
current of typically 1 μA. In this mode, the internal high-side and low-side MOSFETs are turned off and the entire
internal control circuitry is switched off.
9.3.2 COMP/FSET
This pin allows to set two different parameters independently:
•
•
Internal compensation settings for the control loop
The switching frequency in PWM mode from 1.8 MHz to 4 MHz
A resistor from COMP/FSET to GND changes the compensation as well as the switching frequency. The change
in compensation allows you to adapt the device to different values of output capacitance. The resistor must be
placed close to the pin to keep the parasitic capacitance on the pin to a minimum. The compensation setting
is sampled at start-up of the converter, so a change in the resistor during operation only has an effect on the
switching frequency but not on the compensation.
To save external components, the pin can also be directly tied to VIN or GND to set a pre-defined switching
frequency / compensation. Do not leave the pin floating.
The switching frequency has to be selected based on the input voltage and the output voltage to meet the
specifications for the minimum on-time and minimum off-time.
For example: VIN = 5 V, VOUT = 1 V --> duty cycle (DC) = 1 V / 5 V = 0.2
• with ton = DC × T --> ton,min = 1 / fs,max × DC
• --> fs,max = 1 / ton,min × DC = 1 / 0.075 µs · 0.2 = 2.67 MHz
The compensation range has to be chosen based on the minimum capacitance used. The capacitance can be
increased from the minimum value as given in Table 9-1 and Table 9-2, up to the maximum of 470 µF in all of
the three compensation ranges. If the capacitance of an output changes during operation, for example, when
load switches are used to connect or disconnect parts of the circuitry, the compensation has to be chosen for the
minimum capacitance on the output. With large output capacitance, the compensation must be done based on
that large capacitance to get the best load transient response. Compensating for large output capacitance but
placing less capacitance on the output can lead to instability.
The switching frequency for the different compensation setting is determined by the following equations.
For compensation (comp) setting 1:
Space
RCF (k W) =
18MHz × k W
fS ( MHz )
(1)
For compensation (comp) setting 2:
Space
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RCF (k W) =
60 MHz × k W
fS ( MHz )
(2)
Space
For compensation (comp) setting 3:
Space
RCF (k W) =
180 MHz × k W
fS ( MHz )
(3)
Table 9-1. Switching Frequency and Compensation for TPS62810-Q1 (4 A) and TPS62813-Q1 (3 A)
COMPENSATION
RCF
SWITCHING FREQUENCY
MINIMUM OUTPUT
CAPACITANCE
FOR VOUT < 1 V
MINIMUM OUTPUT
CAPACITANCE
FOR 1 V ≤ VOUT < 3.3 V
MINIMUM OUTPUT
CAPACITANCE
FOR VOUT ≥ 3.3 V
for smallest output
capacitance
(comp setting 1)
10 kΩ ... 4.5 kΩ
1.8 MHz (10 kΩ) ... 4 MHz (4.5 kΩ)
according to Equation 1
53 µF
32 µF
27 µF
for medium output
capacitance
(comp setting 2)
33 kΩ ... 15 kΩ
1.8 MHz (33 kΩ) ... 4 MHz (15 kΩ)
according to Equation 2
100 µF
60 µF
50 µF
for large output
capacitance
(comp setting 3)
100 kΩ ... 45 kΩ
1.8 MHz (100 kΩ) ... 4 MHz (45 kΩ)
according to Equation 3
200 µF
120 µF
100 µF
for smallest output
capacitance
(comp setting 1)
tied to GND
internally fixed 2.25 MHz
53 µF
32 µF
27 µF
for large output
capacitance
(comp setting 3)
tied to VIN
internally fixed 2.25 MHz
200 µF
120 µF
100 µF
Table 9-2. Switching Frequency and Compensation for TPS62812-Q1 (2 A) and TPS62811-Q1 (1 A)
COMPENSATION
RCF
SWITCHING FREQUENCY
MINIMUM OUTPUT
CAPACITANCE
FOR VOUT < 1 V
MINIMUM OUTPUT
CAPACITANCE
FOR 1 V ≤ VOUT < 3.3 V
MINIMUM OUTPUT
CAPACITANCE
FOR VOUT ≥ 3.3 V
for smallest output
capacitance
(comp setting 1)
10 kΩ ... 4.5 kΩ
1.8 MHz (10 kΩ) ... 4 MHz (4.5 kΩ)
according to Equation 1
30 µF
18 µF
15 µF
for medium output
capacitance
(comp setting 2)
33 kΩ ... 15 kΩ
1.8 MHz (33 kΩ) ... 4 MHz (15 kΩ)
according to Equation 2
60 µF
36 µF
30 µF
for large output
capacitance
(comp setting 3)
100 kΩ ... 45 kΩ
1.8MHz (100 kΩ) ...4 MHz (45 kΩ)
according to Equation 3
130 µF
80 µF
68 µF
for smallest output
capacitance
(comp setting 1)
tied to GND
internally fixed 2.25 MHz
30 µF
18 µF
15 µF
for large output
capacitance
(comp setting 3)
tied to VIN
internally fixed 2.25 MHz
130 µF
80 µF
68 µF
Refer to Section 10.1.3.2 for further details on the output capacitance required depending on the output voltage.
A too high resistor value for RCF is decoded as "tied to VIN", a value below the lowest range is decoded as "tied
to GND". The minimum output capacitance in Table 9-1 and Table 9-2 is for capacitors close to the output of the
device. If the capacitance is distributed, a lower compensation setting can be required. All values are effective
capacitance, including all tolerances, aging, dc bias effect, and so forth.
9.3.3 MODE / SYNC
When MODE/SYNC is set low, the device operates in PWM or PFM mode, depending on the output current.
The MODE/SYNC pin allows to force PWM mode when set high. The pin also allows you to apply an external
14
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clock in a frequency range from 1.8 MHz to 4 MHz for external synchronization. Similar to COMP/FSET, the
specifications for the minimum on-time and minimum off-time have to be taken into account when setting
the external frequency. For use with external synchronization on the MODE/SYNC pin, the internal switching
frequency must be set by RCF to a similar value than the externally applied clock. This ensures a fast settling
to the external clock and, if the external clock fails, the switching frequency stays in the same range and the
compensation settings are still valid. When there is no resistor from COMP/FSET to GND but the pin is pulled
high or low, external synchronization is not possible.
9.3.4 Spread Spectrum Clocking (SSC)
For device versions with SSC enabled, the switching frequency is randomly changed in PWM mode when the
internal clock is used. The frequency variation is typically between the nominal switching frequency and up to
288 kHz above the nominal switching frequency. When the device is externally synchronized by applying a clock
signal to the MODE/SYNC pin, the TPS6281x-Q1 follows the external clock and the internal spread spectrum
block is turned off. SSC is also disabled during soft start.
9.3.5 Undervoltage Lockout (UVLO)
If the input voltage drops, the undervoltage lockout prevents mis-operation of the device by switching off both
the power FETs. The device is fully operational for voltages above the rising UVLO threshold and turns off if the
input voltage trips below the threshold for a falling supply voltage.
9.3.6 Power Good Output (PG)
Power good is an open-drain output driven by a window comparator. PG is held low when the device is disabled,
in undervoltage lockout, and in thermal shutdown. When the output voltage is in regulation hence, within the
window defined in the electrical characteristics, the output is high impedance.
Table 9-3. PG Status
EN
DEVICE STATUS
PG STATE
X
VIN < 2 V
undefined
low
VIN ≥ 2 V
low
high
2 V ≤ VIN ≤ UVLO OR in thermal shutdown OR VOUT not in regulation
low
high
VOUT in regulation
high impedance
9.3.7 Thermal Shutdown
The junction temperature (TJ) of the device is monitored by an internal temperature sensor. If TJ exceeds 170°C
(typ), the device goes into thermal shutdown. Both the high-side and low-side power FETs are turned off and
PG goes low. When TJ decreases by the hysteresis amount of typically 15°C, the converter resumes normal
operation, beginning with soft start. During a PFM pause, the thermal shutdown is not active. After a PFM pause,
the device needs up to 9 µs to detect a too high junction temperature. If the PFM burst is shorter than this delay,
the device does not detect a too high junction temperature.
9.4 Device Functional Modes
9.4.1 Pulse Width Modulation (PWM) Operation
TPS6281x-Q1 has two operating modes: Forced PWM mode (discussed in this section) and PWM/PFM
(discussed in Section 9.4.2).
With the MODE/SYNC pin set to high, the TPS6281x-Q1 operates with pulse width modulation in continuous
conduction mode (CCM). The switching frequency is either defined by a resistor from the COMP pin to GND or
by an external clock signal applied to the MODE/SYNC pin. With an external clock is applied to MODE/SYNC,
the TPS6281x-Q1 follows the frequency applied to the pin. To maintain regulation, the frequency needs to be in
a range the TPS6281x-Q1 can operate at, taking the minimum on-time into account.
9.4.2 Power Save Mode Operation (PWM/PFM)
When the MODE/SYNC pin is low, power save mode is allowed. The device operates in PWM mode as long
as the peak inductor current is above the PFM threshold of about 1.2 A. When the peak inductor current
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drops below the PFM threshold, the device starts to skip switching pulses. In power save mode, the switching
frequency decreases with the load current maintaining high efficiency.
9.4.3 100% Duty-Cycle Operation
The duty cycle of a buck converter operated in PWM mode is given as D = VOUT / VIN. The duty cycle
increases as the input voltage comes close to the output voltage and the off-time gets smaller. When the
minimum off-time of typically 30 ns is reached, the TPS6281x-Q1 skips switching cycles while it approaches
100% mode. In 100% mode, it keeps the high-side switch on continuously. The high-side switch stays turned
on as long as the output voltage is below the target. In 100% mode, the low-side switch is turned off. The
maximum dropout voltage in 100% mode is the product of the on-resistance of the high-side switch plus the
series resistance of the inductor and the load current.
9.4.4 Current Limit and Short Circuit Protection
The TPS6281x-Q1 is protected against overload and short circuit events. If the inductor current exceeds the
current limit ILIMH, the high-side switch is turned off and the low-side switch is turned on to ramp down the
inductor current. The high-side switch turns on again only if the current in the low-side switch has decreased
below the low-side current limit. Due to internal propagation delay, the actual current can exceed the static
current limit. The dynamic current limit is given as:
Ipeak (typ ) = ILIMH +
VL
× tPD
L
(4)
where
•
•
•
•
ILIMH is the static current limit as specified in the electrical characteristics
L is the effective inductance at the peak current
VL is the voltage across the inductor (VIN - VOUT)
tPD is the internal propagation delay of typically 50 ns
The current limit can exceed static values, especially if the input voltage is high and very small inductances are
used. The dynamic high-side switch peak current can be calculated as follows:
Ipeak (typ ) = ILIMH +
VIN - VOUT
× 50ns
L
(5)
9.4.5 Foldback Current Limit and Short Circuit Protection
This is valid for devices where foldback current limit is enabled.
When the device detects current limit for more than 1024 subsequent switching cycles, it reduces the current
limit from its nominal value to typically 1.8 A. Foldback current limit is left when the current limit indication goes
away. For the case that device operation continues in current limit, it would, after 3072 switching cycles, try again
full current limit for again 1024 switching cycles.
9.4.6 Output Discharge
The purpose of the discharge function is to ensure a defined down-ramp of the output voltage when the device
is being disabled but also to keep the output voltage close to 0 V when the device is off. The output discharge
feature is only active once TPS6281x-Q1 has been enabled at least once since the supply voltage was applied.
The discharge function is enabled as soon as the device is disabled, in thermal shutdown, or in undervoltage
lockout. The minimum supply voltage required for the discharge function to remain active typically is 2 V. Output
discharge is not activated during a current limit or foldback current limit event.
9.4.7 Soft Start / Tracking (SS/TR)
The internal soft-start circuitry controls the output voltage slope during start-up. This avoids excessive inrush
current and ensures a controlled output voltage rise time. It also prevents unwanted voltage drops from high
impedance power sources or batteries. When EN is set high to start operation, the device starts switching after
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a delay of about 200 μs then the internal reference and hence VOUT rises with a slope controlled by an external
capacitor connected to the SS/TR pin.
Leaving the SS/TR pin un-connected provides the fastest startup ramp with 150 µs typically. A capacitor
connected from SS/TR to GND is charged with 2.5 µA by an internal current source during soft start until it
reaches the reference voltage of 0.6 V. The capacitance required to set a certain ramp-time (tramp) therefore is:
(6)
If the device is set to shutdown (EN = GND), undervoltage lockout, or thermal shutdown, an internal resistor
pulls the SS/TR pin to GND to ensure a proper low level. Returning from those states causes a new start-up
sequence.
A voltage applied at SS/TR can be used to track a master voltage. The output voltage follows this voltage in both
directions up and down in forced PWM mode. In PFM mode, the output voltage decreases based on the load
current. The SS/TR pin must not be connected to the SS/TR pin of other devices. An external voltage applied on
SS/TR is internally clamped to the feedback voltage (0.6 V). It is recommended to set the target for the external
voltage on SS/TR slightly above the feedback voltage. Given the tolerances of the resistor divider R5 and R6 on
SS/TR, this ensures the device "switches" to the internal reference voltage when the power-up sequencing is
finished. See Figure 10-58.
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10 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and
TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
10.1 Application Information
10.1.1 Programming the Output Voltage
The output voltage of the TPS6281x-Q1 is adjustable. It can be programmed for output voltages from 0.6 V to
5.5 V using a resistor divider from VOUT to GND. The voltage at the FB pin is regulated to 600 mV. The value
of the output voltage is set by the selection of the resistor divider from Equation 7. It is recommended to choose
resistor values which allow a current of at least 2 µA, meaning the value of R2 must not exceed 400 kΩ. Lower
resistor values are recommended for highest accuracy and most robust design.
æ VOUT ö
R1 = R 2 × ç
- 1÷
è VFB
ø
(7)
10.1.2 External Component Selection
10.1.2.1 Inductor Selection
The TPS6281x-Q1 is designed for a nominal 0.47-µH inductor with a switching frequency of typically 2.25 MHz.
Larger values can be used to achieve a lower inductor current ripple but they can have a negative impact on
efficiency and transient response. Smaller values than 0.47 µH cause a larger inductor current ripple which
causes larger negative inductor current in forced PWM mode at low or no output current. For a higher or lower
nominal switching frequency, the inductance must be changed accordingly. See Section 7.3 for details.
The inductor selection is affected by several effects like inductor ripple current, output ripple voltage, PWM-toPFM transition point, and efficiency. In addition, the inductor selected has to be rated for appropriate saturation
current and DC resistance (DCR). Equation 8 calculates the maximum inductor current.
I L(max) = I OUT (max) +
DI L(max)
2
(8)
æ VOUT ö
VOUT × ç1 ÷
VIN ø 1
è
DIL (max) =
×
L min
fSW
(9)
where
•
•
•
IL(max) is the maximum inductor current
ΔIL(max) is the peak-to-peak inductor ripple current
Lmin is the minimum inductance at the operating point
Table 10-1. Typical Inductors
18
FOR DEVICE
NOMINAL
SWITCHING
FREQUENCY
DIMENSIONS
[LxBxH] mm
MANUFACTURER(2)
3.5
TPS62813-Q1 / 12-Q1
2.25 MHz
4 x 4 x 1.6
Coilcraft
2.25 MHz
4 x 4 x 2.1
Coilcraft
2.25 MHz
4 x 4 x 3.1
Coilcraft
TYPE
INDUCTANCE
[µH]
CURRENT [A]
XFL4015-471ME
0.47 µH, ±20%
(1)
XEL4020-561ME
0.56 µH, ±20%
9.9
TPS62810-Q1 / 13-Q1 /
12-Q1
XEL4030-471ME
0.47 µH, ±20%
12.3
TPS62810-Q1 / 13-Q1 /
12-Q1
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Table 10-1. Typical Inductors (continued)
TYPE
INDUCTANCE
[µH]
CURRENT [A]
(1)
FOR DEVICE
NOMINAL
SWITCHING
FREQUENCY
DIMENSIONS
[LxBxH] mm
MANUFACTURER(2)
XEL3515-561ME
0.56 µH, ±20%
4.5
TPS62813-Q1 / 12-Q1
2.25 MHz
3.5 x 3.2 x 1.5
Coilcraft
XFL3012-331MEB
0.33 µH, ±20%
2.6
TPS62811-Q1 / 12-Q1
≥ 3.5 MHz
3 x 3 x 1.3
Coilcraft
XPL2010-681ML
0.68 µH, ±20%
1.5
TPS62811-Q1
2.25 MHz
2 x 1.9 x 1
Coilcraft
DFE252012PD-R47M
0.47 µH, ±20%
see data sheet
TPS62813-Q1 / 12-Q1 /
11-Q1
2.25 MHz
2.5 x 2 x 1.2
Murata
(1)
(2)
Lower of IRMS at 20°C rise or ISAT at 20% drop.
See the Third-party Products Disclaimer.
Calculating the maximum inductor current using the actual operating conditions gives the minimum saturation
current of the inductor needed. A margin of about 20% is recommended to add. A larger inductor value is also
useful to get lower ripple current, but increases the transient response time and size as well.
10.1.3 Capacitor Selection
10.1.3.1 Input Capacitor
For most applications, 22 µF nominal is sufficient and is recommended. The input capacitor buffers the input
voltage for transient events and also decouples the converter from the supply. A low-ESR multilayer ceramic
capacitor (MLCC) is recommended for best filtering and must be placed between VIN and GND as close as
possible to those pins.
10.1.3.2 Output Capacitor
The architecture of the TPS6281x-Q1 allows the use of tiny ceramic output capacitors with low equivalent series
resistance (ESR). These capacitors provide low output voltage ripple and are recommended. To keep its low
resistance up to high frequencies and to get narrow capacitance variation with temperature, it is recommended
to use dielectric X7R, X7T, or an equivalent. Using a higher value has advantages like smaller voltage ripple and
a tighter DC output accuracy in power save mode. By changing the device compensation with a resistor from
COMP/FSET to GND, the device can be compensated in three steps based on the minimum capacitance used
on the output. The maximum capacitance is 470 µF in any of the compensation settings.
The minimum capacitance required on the output depends on the compensation setting as well as on the current
rating of the device. TPS62810-Q1 and TPS62813-Q1 require a minimum output capacitance of 27 µF while
the lower current versions TPS62812-Q1 and TPS62811-Q1 require 15 µF at minimum. The required output
capacitance also changes with the output voltage.
For output voltages below 1 V, the minimum increases linearly from 32 µF at 1 V to 53 µF at 0.6 V for
the TPS62810-Q1, the TPS62813-Q1 with the compensation setting for smallest output capacitance. Other
compensation ranges, ranges for TPS62811-Q1 and TPS62812-Q1, or both are equivalent. See Table 9-1 and
Table 9-2 for details.
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10.2 Typical Application
VIN
2.75 V - 6 V
TPS62810-Q1
VIN
L
0.47 mH
VOUT
SW
CIN
22 mF
R1
EN
CFF
FB
MODE/SYNC
R2
R3
COMP/FSET
SS/TR
RCF
CSS
COUT
2 x 22 mF
+ 10 mF
PG
GND
Figure 10-1. Typical Application
10.2.1 Design Requirements
The design guidelines provide a component selection to operate the device within the recommended operating
conditions.
10.2.2 Detailed Design Procedure
æ VOUT ö
R1 = R 2 × ç
- 1÷
è VFB
ø
(10)
With VFB = 0.6 V:
Table 10-2. Setting the Output Voltage
20
NOMINAL OUTPUT VOLTAGE
VOUT
R1
R2
CFF
EXACT OUTPUT VOLTAGE
0.8 V
16.9 kΩ
51 kΩ
10 pF
0.7988 V
1.0 V
20 kΩ
30 kΩ
10 pF
1.0 V
1.1 V
39.2 kΩ
47 kΩ
10 pF
1.101 V
1.2 V
68 kΩ
68 kΩ
10 pF
1.2 V
1.5 V
76.8 kΩ
51 kΩ
10 pF
1.5 V
1.8 V
80.6 kΩ
40.2 kΩ
10 pF
1.803 V
2.5 V
47.5 kΩ
15 kΩ
10 pF
2.5 V
3.3 V
88.7 kΩ
19.6 kΩ
10 pF
3.315 V
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10.2.3 Application Curves
All plots have been taken with a nominal switching frequency of 2.25 MHz when set to PWM mode, unless
otherwise noted. The BOM is according to Table 8-1.
100
100
95
95
90
Efficiency (%)
Efficiency (%)
85
80
75
70
65
60
VIN = 4.0 V
VIN = 5.0 V
VIN = 6.0 V
55
50
100P
90
85
80
VIN = 4.0 V
VIN = 5.0 V
VIN = 6.0 V
75
70
1m
VOUT = 3.3 V
10m
100m
Output Current (A)
PFM
1
0
4
1
D002
VOUT = 3.3 V
TA = 25°C
Figure 10-2. Efficiency versus Output Current
2
Output Current (A)
PWM
3
4
D002
TA = 25°C
Figure 10-3. Efficiency versus Output Current
100
100
95
95
90
90
Efficiency (%)
Efficiency (%)
85
80
75
70
65
VIN
VIN
VIN
VIN
VIN
60
55
50
100P
=
=
=
=
=
2.7
3.3
4.0
5.0
6.0
V
V
V
V
V
85
80
75
VIN
VIN
VIN
VIN
VIN
70
65
10m
100m
Output Current (A)
PFM
1
0
4
1
D002
TA = 25°C
VOUT = 1.8 V
Figure 10-4. Efficiency versus Output Current
2
Output Current (A)
PWM
3
4
D002
TA = 25°C
100
VIN
VIN
VIN
VIN
VIN
95
95
90
Efficiency (%)
85
Efficiency (%)
V
V
V
V
V
Figure 10-5. Efficiency versus Output Current
100
80
75
70
65
VIN
VIN
VIN
VIN
VIN
60
55
VOUT = 1.2 V
2.7
3.3
4.0
5.0
6.0
60
1m
VOUT = 1.8 V
50
100P
=
=
=
=
=
=
=
=
=
=
2.7
3.3
4.0
5.0
6.0
V
V
V
V
V
90
=
=
=
=
=
2.7
3.3
4.0
5.0
6.0
V
V
V
V
V
85
80
75
70
1m
10m
100m
Output Current (A)
PFM
1
4
TA = 25°C
Figure 10-6. Efficiency versus Output Current
Copyright © 2021 Texas Instruments Incorporated
0
D002
VOUT = 1.2 V
1
2
Output Current (A)
PWM
3
4
D002
TA = 25°C
Figure 10-7. Efficiency versus Output Current
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100
100
95
95
90
90
Efficiency (%)
Efficiency (%)
85
80
75
70
65
VIN
VIN
VIN
VIN
VIN
60
55
50
100P
=
=
=
=
=
2.7
3.3
4.0
5.0
6.0
V
V
V
V
V
10m
100m
Output Current (A)
PFM
1
0
4
TA = 25°C
VOUT = 1.0 V
85
85
80
80
75
70
65
60
2.7
3.3
4.0
5.0
6.0
V
V
V
V
V
2
Output Current (A)
PWM
3
4
D002
TA = 25°C
75
70
65
60
VIN = 2.7 V
VIN = 3.3 V
VIN = 4.0 V
55
VIN = 2.7 V
VIN = 3.3 V
VIN = 4.0 V
55
50
1m
VOUT = 0.6 V
10m
100m
Output Current (A)
PFM
1
0
4
TA = 25°C
VOUT = 0.6 V
3,32
3,32
3,316
3,31
3,312
Output Voltage (V)
3,305
3,3
3,295
3,29
3,285
1m
10m
100m
Output Current (A)
PFM
1
4
4
D002
TA = 25°C
3,304
3,3
3,296
3,292
3,288
3,276
100P
D002
TA = 25°C
3
3,308
VIN = 4.0 V
VIN = 5.0 V
VIN = 6.0 V
3,28
Figure 10-12. Output Voltage versus Output
Current
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PWM
3,284
VIN = 4.0 V
VIN = 5.0 V
VIN = 6.0 V
3,275
2
Output Current (A)
Figure 10-11. Efficiency versus Output Current
3,315
3,28
1
D002
Figure 10-10. Efficiency versus Output Current
VOUT = 3.3 V
=
=
=
=
=
Figure 10-9. Efficiency versus Output Current
90
3,27
100P
1
D002
90
50
100P
VIN
VIN
VIN
VIN
VIN
65
Efficiency (%)
Efficiency (%)
75
70
Figure 10-8. Efficiency versus Output Current
Output Voltage (V)
80
60
1m
VOUT = 1.0 V
22
85
VOUT = 3.3 V
1m
10m
100m
Output Current (A)
PWM
1
4
D002
TA = 25°C
Figure 10-13. Output Voltage versus Output
Current
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1,82
1,82
1,816
1,816
1,812
1,812
1,808
1,808
Output Voltage (V)
Output Voltage (V)
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1,804
1,8
1,796
1,792
1,788
1,784
VIN
VIN
VIN
VIN
VIN
=
=
=
=
=
1,78
100P
2.7
3.3
4.0
5.0
6.0
V
V
V
V
V
1m
PFM
1
TA = 25°C
V
V
V
V
V
1m
10m
100m
Output Current (A)
PWM
1
4
D002
TA = 25°C
Figure 10-15. Output Voltage versus Output
Current
1,2125
1,21
1,2075
Output Voltage (V)
1,205
1,2025
1,2
1,1975
1,195
VIN
VIN
VIN
VIN
VIN
1,1925
1,19
=
=
=
=
=
1,1875
100P
2.7
3.3
4.0
5.0
6.0
V
V
V
V
V
1m
1,205
1,2025
1,2
1,1975
1,195
1,19
PFM
1
4
TA = 25°C
1,006
1,006
1,004
1,004
Output Voltage (V)
1,01
1,002
1
0,998
VOUT = 1.0 V
1m
V
V
V
V
V
1
4
Figure 10-18. Output Voltage versus Output
Current
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4
D002
TA = 25°C
1
0,996
VIN
VIN
VIN
VIN
VIN
0,99
100P
D002
TA = 25°C
PWM
1
0,998
0,992
PFM
10m
100m
Output Current (A)
1,002
0,994
10m
100m
Output Current (A)
1m
Figure 10-17. Output Voltage versus Output
Current
1,008
0,99
100P
V
V
V
V
V
VOUT = 1.2 V
1,01
2.7
3.3
4.0
5.0
6.0
2.7
3.3
4.0
5.0
6.0
D002
1,008
=
=
=
=
=
=
=
=
=
=
1,1875
100P
Figure 10-16. Output Voltage versus Output
Current
VIN
VIN
VIN
VIN
VIN
VIN
VIN
VIN
VIN
VIN
1,1925
10m
100m
Output Current (A)
VOUT = 1.2 V
0,992
2.7
3.3
4.0
5.0
6.0
VOUT = 1.8 V
1,2075
0,994
=
=
=
=
=
D002
1,21
0,996
VIN
VIN
VIN
VIN
VIN
1,78
100P
4
1,2125
Output Voltage (V)
1,792
1,784
Figure 10-14. Output Voltage versus Output
Current
Output Voltage (V)
1,8
1,796
1,788
10m
100m
Output Current (A)
VOUT = 1.8 V
1,804
VOUT = 1.0 V
=
=
=
=
=
2.7
3.3
4.0
5.0
6.0
1m
V
V
V
V
V
10m
100m
Output Current (A)
PWM
1
4
D002
TA = 25°C
Figure 10-19. Output Voltage versus Output
Current
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0,612
0,606
0,61
0,6045
0,603
Output Voltage (V)
Output Voltage (V)
0,608
0,606
0,604
0,602
0,6
0,598
0,596
0,6
0,5985
0,597
VIN = 2.7 V
VIN = 3.3 V
VIN = 4.0 V
0,594
100P
VOUT = 0.6 V
1m
VOUT = 3.3 V
VIN = 5.0 V
10m
100m
Output Current (A)
PFM
1
4
PFM
TA = 25°C
TA = 25°C
IOUT = 0.4 A to 3.6 A to 0.4 A
PFM
0,594
100P
D002
Figure 10-22. Load Transient Response
VOUT = 1.8 V
VIN
VIN
VIN
VIN
0,5955
Figure 10-20. Output Voltage versus Output
Current
VIN = 5.0 V
0,6015
VOUT = 0.6 V
1m
10m
100m
Output Current (A)
PWM
=
=
=
=
2.7
3.3
4.0
5.0
1
V
V
V
V
4
D002
TA = 25°C
Figure 10-21. Output Voltage versus Output
Current
VOUT = 3.3 V
VIN = 5.0 V
PWM
TA = 25°C
IOUT = 0.4 A to 3.6 A to 0.4 A
Figure 10-23. Load Transient Response
TA = 25°C
IOUT = 0.4 A to 3.6 A to 0.4 A
Figure 10-24. Load Transient Response
VOUT = 1.8 V
VIN = 5.0 V
PWM
TA = 25°C
IOUT = 0.4 A to 3.6 A to 0.4 A
Figure 10-25. Load Transient Response
24
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VOUT = 1.2 V
VIN = 5.0 V
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PFM
TA = 25°C
IOUT = 0.4 A to 3.6 A to 0.4 A
Figure 10-26. Load Transient Response
VOUT = 1.0 V
VIN = 5.0 V
PFM
TA = 25°C
IOUT = 0.4 A to 3.6 A to 0.4 A
Figure 10-28. Load Transient Response
VOUT = 0.6 V
VIN = 3.3 V
PFM
TA = 25°C
IOUT = 0.4 A to 3.6 A to 0.4 A
Figure 10-30. Load Transient Response
Copyright © 2021 Texas Instruments Incorporated
VOUT = 1.2 V
VIN = 5.0 V
PWM
TA = 25°C
IOUT = 0.4 A to 3.6 A to 0.4 A
Figure 10-27. Load Transient Response
VOUT = 1.0 V
VIN = 5.0 V
PWM
TA = 25°C
IOUT = 0.4 A to 3.6 A to 0.4 A
Figure 10-29. Load Transient Response
VOUT = 0.6 V
VIN = 3.3 V
PWM
TA = 25°C
IOUT = 0.4 A to 3.6 A to 0.4 A
Figure 10-31. Load Transient Response
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VOUT = 3.3 V
IOUT = 0.5 A
PFM
TA = 25°C
VIN = 4.5 V to 5.5 V to 4.5 V
Figure 10-32. Line Transient Response
VOUT = 1.8 V
IOUT = 0.5 A
PFM
TA = 25°C
VIN = 4.5 V to 5.5 V to 4.5 V
Figure 10-34. Line Transient Response
VOUT = 1.2 V
IOUT = 0.5 A
PFM
TA = 25°C
VIN = 4.5 V to 5.5 V to 4.5 V
Figure 10-36. Line Transient Response
26
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VOUT = 3.3 V
IOUT = 4 A
PWM
TA = 25°C
VIN = 4.5 V to 5.5 V to 4.5 V
Figure 10-33. Line Transient Response
VOUT = 1.8 V
IOUT = 4 A
PWM
TA = 25°C
VIN = 4.5 V to 5.5 V to 4.5 V
Figure 10-35. Line Transient Response
VOUT = 1.2 V
IOUT = 4 A
PWM
TA = 25°C
VIN = 4.5 V to 5.5 V to 4.5 V
Figure 10-37. Line Transient Response
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VOUT = 1.0 V
IOUT = 0.5 A
SLVSDU1H – AUGUST 2018 – REVISED APRIL 2021
PFM
TA = 25°C
VIN = 4.5 V to 5.5 V to 4.5 V
Figure 10-38. Line Transient Response
VOUT = 0.6 V
IOUT = 0.5 A
PFM
TA = 25°C
VIN = 3.0 V to 3.6 V to 3.0 V
Figure 10-40. Line Transient Response
VOUT = 1.0 V
IOUT = 4 A
PWM
TA = 25°C
VIN = 4.5 V to 5.5 V to 4.5 V
Figure 10-39. Line Transient Response
VOUT = 0.6 V
IOUT = 4 A
PWM
TA = 25°C
VIN = 3.0 V to 3.6 V to 3.0 V
Figure 10-41. Line Transient Response
VOUT = 3.3 V
PFM
TA = 25°C
VOUT = 3.3 V
PWM
TA = 25°C
IOUT = 0.5 A
VIN = 5.0 V
BW = 20 MHz
IOUT = 4 A
VIN = 5.0 V
BW = 20 MHz
Figure 10-42. Output Voltage Ripple
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Figure 10-43. Output Voltage Ripple
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VOUT = 1.8 V
PFM
TA = 25°C
VOUT = 1.8 V
PWM
TA = 25°C
IOUT = 0.5 A
VIN = 5.0 V
BW = 20 MHz
IOUT = 4 A
VIN = 5.0 V
BW = 20 MHz
Figure 10-44. Output Voltage Ripple
VOUT = 1.2 V
PFM
TA = 25°C
VOUT = 1.2 V
PWM
TA = 25°C
IOUT = 0.5 A
VIN = 5.0 V
BW = 20 MHz
IOUT = 4 A
VIN = 5.0 V
BW = 20 MHz
Figure 10-46. Output Voltage Ripple
Figure 10-47. Output Voltage Ripple
VOUT = 1.0 V
PFM
TA = 25°C
VOUT = 1.0 V
PWM
TA = 25°C
IOUT = 0.5 A
VIN = 5.0 V
BW = 20 MHz
IOUT = 4 A
VIN = 5.0 V
BW = 20 MHz
Figure 10-48. Output Voltage Ripple
28
Figure 10-45. Output Voltage Ripple
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Figure 10-49. Output Voltage Ripple
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VOUT = 0.6 V
PFM
TA = 25°C
VOUT = 0.6 V
PWM
TA = 25°C
IOUT = 0.5 A
VIN = 3.3 V
BW = 20 MHz
IOUT = 4 A
VIN = 3.3 V
BW = 20 MHz
Figure 10-50. Output Voltage Ripple
VOUT = 3.3 V
PWM
TA = 25°C
IOUT = 4 A
VIN = 5 V
CSS = 4.7 nF
Figure 10-51. Output Voltage Ripple
VOUT = 1.8 V
PWM
TA = 25°C
IOUT = 4 A
VIN = 5 V
CSS = 4.7 nF
Figure 10-53. Start-Up Timing
Figure 10-52. Start-Up Timing
VOUT = 1.2 V
PWM
TA = 25°C
VOUT = 1.0 V
PWM
TA = 25°C
IOUT = 4 A
VIN = 5 V
CSS = 4.7 nF
IOUT = 4 A
VIN = 5 V
CSS = 4.7 nF
Figure 10-54. Start-Up Timing
Copyright © 2021 Texas Instruments Incorporated
Figure 10-55. Start-Up Timing
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VOUT = 0.6 V
PWM
TA = 25°C
IOUT = 4 A
VIN = 3.3 V
CSS = 4.7 nF
Figure 10-56. Start-up Timing
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10.3 System Examples
10.3.1 Fixed Output Voltage Versions
Versions with an internally fixed output voltage allow you to remove the external feedback voltage divider. This
not only allows you to reduce the total solution size but also provides higher accuracy as there is no additional
error caused by the external resistor divider. The FB pin needs to be tied to the output voltage directly as shown
in Figure 10-57. Independent of that, the application shown runs with an internally defined switching frequency of
2.25 MHz by connecting COMP/FSET to GND.
VIN
2.75 V - 6 V
TPS62812x-Q1
VIN
SW
EN
FB
L
0.56 mH
VOUT
CIN
22 mF
MODE/SYNC
R3
COMP/FSET
SS/TR
CSS
COUT
1 x 22 mF
+ 10 mF
PG
GND
Figure 10-57. Schematic for Fixed Output Voltage Versions
10.3.2 Voltage Tracking
The TPS6281x-Q1 follows the voltage applied to the SS/TR pin. A voltage ramp on SS/TR to 0.6 V ramps the
output voltage according to the 0.6 V feedback voltage.
Tracking the 3.3 V of device 1, such that both rails reach their target voltage at the same time, requires a resistor
divider on SS/TR of device 2 equal to the output voltage divider of device 1. The output current of 2.5 µA on
the SS/TR pin causes an offset voltage on the resistor divider formed by R5 and R6. The equivalent resistance
of R5 // R6, so it must be kept below 15 kΩ. The current from SS/TR causes a slightly higher voltage across R6
than 0.6 V, which is desired because device 2 switches to its internal reference as soon as the voltage at SS/TR
is higher than 0.6 V.
In case both devices need to run in forced PWM mode, it is recommended to tie the MODE pin of device 2 to
the output voltage or the power good signal of device 1, the master device. The TPS6281x-Q1 has a duty cycle
limitation defined by the minimum on-time. For tracking down to low output voltages, device 2 cannot follow once
the minimum duty cycle is reached. Enabling PFM mode while tracking is in progress allows you to ramp down
the output voltage close to 0 V.
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MODE/SYNC
FB
EN
EN
4.7 nF
8.06 kW
SS/TR
PG
19.6 kW
VIN
SW
CIN
22 mF
EN
FB
MODE/SYNC
8.06 kW
4.22 kW
SS/TR
R6
COUT
47 mF
GND
Device 2 (slave)
TPS62810-Q1
R5
3.3 V
10 pF
COMP/FSET
L
0.47 mH
40.2 kW 80.6 kW
CIN
22 mF
12.7 kW 57.6 kW
Device 1 (master)
L
TPS62810-Q1
0.47 mH
VIN
SW
VIN
2.75 V - 6 V
1.8 V
10 pF
COUT
47 mF
COMP/FSET
PG
GND
Figure 10-58. Schematic for Output Voltage Tracking
Figure 10-59. Scope Plot for Output Voltage Tracking
10.3.3 Synchronizing to an External Clock
The TPS6281x-Q1 can be externally synchronized by applying an external clock on the MODE/SYNC pin.
There is no need for any additional circuitry as long as the input signal meets the requirements given in the
electrical specifications. The clock can be applied / removed during operation, allowing you to switch from an
externally-defined fixed frequency to power-save mode or to internal fixed frequency operation. The value of the
RCF resistor must be chosen so that the internally defined frequency and the externally applied frequency are
close to each other. This ensures a smooth transition from internal to external frequency and vice versa.
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VIN
2.75 V - 6 V
TPS62810-Q1
VIN
L
0.47 mH
CIN
22 mF
R1
EN
CFF
FB
MODE/SYNC
R2
R3
COUT
47 mF
COMP/FSET
SS/TR
RCF
fEXT
VOUT
SW
CSS
PG
GND
Figure 10-60. Schematic Using External Synchronization
VIN = 5 V
RCF = 8.06 kΩ
VOUT = 1.8 V
fEXT = 2.5 MHz
IOUT = 0.1 A
Figure 10-61. Switching from External
Synchronization to Power-Save Mode (PFM)
Copyright © 2021 Texas Instruments Incorporated
VIN = 5 V
RCF = 8.06 kΩ
VOUT = 1.8 V
fEXT = 2.5 MHz
IOUT = 1 A
Figure 10-62. Switching from External
Synchronization to Internal Fixed Frequency
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11 Power Supply Recommendations
The TPS6281x-Q1 device family has no special requirements for its input power supply. The output current of
the input power supply needs to be rated according to the supply voltage, output voltage, and output current of
the TPS6281x-Q1.
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SLVSDU1H – AUGUST 2018 – REVISED APRIL 2021
12 Layout
12.1 Layout Guidelines
A proper layout is critical for the operation of a switched mode power supply, even more at high switching
frequencies. Therefore, the PCB layout of the TPS6281x-Q1 demands careful attention to ensure operation and
to get the performance specified. A poor layout can lead to issues like poor regulation (both line and load),
stability and accuracy weaknesses increased EMI radiation and noise sensitivity.
See Section 12.2 for the recommended layout of the TPS6281x-Q1, which is designed for common external
ground connections. The input capacitor must be placed as close as possible between the VIN and GND pin.
Provide low inductive and resistive paths for loops with high di/dt. Therefore, paths conducting the switched load
current must be as short and wide as possible. Provide low capacitive paths (with respect to all other nodes) for
wires with high dv/dt. Therefore, the input and output capacitance must be placed as close as possible to the IC
pins and parallel wiring over long distances as well as narrow traces must be avoided. Loops that conduct an
alternating current must outline an area as small as possible, as this area is proportional to the energy radiated.
Sensitive nodes like FB need to be connected with short wires and not nearby high dv/dt signals (for example
SW). Since they carry information about the output voltage, they must be connected as close as possible to the
actual output voltage (at the output capacitor). The capacitor on the SS/TR pin as well as the FB resistors, R1
and R2, must be kept close to the IC and connect directly to those pins and the system ground plane.
The package uses the pins for power dissipation. Thermal vias on the VIN and GND pins help spread the heat
into the pcb.
The recommended layout is implemented on the EVM and shown in the TPS62810EVM-015 Evaluation Module
User's Guide.
12.2 Layout Example
GND
VOUT
GND
VIN
Figure 12-1. Example Layout
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13 Device and Documentation Support
13.1 Device Support
13.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
13.2 Documentation Support
13.2.1 Related Documentation
For related documentation see the following:
Texas Instruments, TPS62810EVM-015 Evaluation Module, SLVUBG0
13.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
13.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
13.5 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
13.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
13.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
36
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SLVSDU1H – AUGUST 2018 – REVISED APRIL 2021
PACKAGE OUTLINE
RWY0009A
VQFN-HR - 1 mm max height
SCALE 5.000
PLASTIC QUAD FLATPACK - NO LEAD
2.1
1.9
B
A
PIN 1 INDEX AREA
3.1
2.9
0.1 MIN
(0.05)
SECTION A-A
SECTION A-A
SCALE 30.000
TYPICAL
1 MAX
C
SEATING PLANE
0.05
0.00
0.08 C
1.1
0.55
0.675
0.575
(0.2) TYP
6
5
A
4
A
SYMM
3
2
0.55
0.45
7
0.2 0.05
(0.9)
2
9X
0.5 TYP
8
1
9
0.675
0.575
SYMM
4X
0.4
0.3
0.1
0.05
0.3
0.2
0.1
0.05
C A B
C
C A B
C
4224015/B 01/2018
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
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EXAMPLE BOARD LAYOUT
RWY0009A
VQFN-HR - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
SYMM
(0.65)
(0.55)
(0.35)
9
SEE SOLDER MASK DETAIL
(0.25)
1
8
3X (0.25)
(0.5)
2
(0.5)
SYMM
(2.65)
3
3X (2.3)
4
(R0.05) TYP
5
7
(0.775)
6
(0.775)
0.25
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 25X
0.05 MAX
ALL AROUND
METAL EDGE
EXPOSED METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAIL
4224015/B 01/2018
NOTES: (continued)
3. This package is designed to be soldered to thermal pads on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
4. Vias are optional depending on application, refer to device data sheet. It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
RWY0009A
VQFN-HR - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(0.25)
(0.775)
(0.65)
(0.31)
9
EXPOSED METAL
TYP
(0.775)
1
(0.21)
8
2
(0.5)
6X (1.05)
SYMM
(2.65)
3
4
6X (0.25)
5
7
(R0.05) TYP
6
SYMM
(1.25)
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
PADS 1, 5, 7 & 8:
90% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE: 25X
4224015/B 01/2018
NOTES: (continued)
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Nov-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS6281008QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
81008Q
TPS628100MQWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
8100MQ
TPS6281020QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
81020Q
TPS62810QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
810Q
TPS6281109QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
81109Q
TPS628110AQWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
8110AQ
TPS6281120QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
81120Q
TPS6281126QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
81126Q
TPS628112AQWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
8112AQ
TPS628112MQWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
8112MQ
TPS628113HQWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
8113HQ
TPS62811QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
811Q
TPS6281206QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
81206Q
TPS6281208QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
81208Q
TPS628120MQWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
8120MQ
TPS6281220QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
81220Q
TPS6281228QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
81228Q
TPS628122GQWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
8122GQ
TPS62812QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
812Q
TPS6281320QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
81320Q
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
11-Nov-2021
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS6281326QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 120
81326Q
TPS628132DQWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
8132DQ
TPS628132MQWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
8132MQ
TPS62813QWRWYRQ1
ACTIVE
VQFN-HR
RWY
9
3000
RoHS & Green
NIPDAU | SN
Level-2-260C-1 YEAR
-40 to 125
813Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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