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TPS65381-Q1
SLVSBC4G – MAY 2012 – REVISED JUNE 2017
TPS65381-Q1 Multirail Power Supply for Microcontrollers in Safety-Relevant Applications
Not Recommended for New Designs
1 Device Overview
1.1
Features
1
• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following
Results:
– Device Temperature Grade 1: –40°C to +125°C
Ambient Operating Temperature
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C3B
• Multirail Power Supply Supporting Among
Others
– TI Hercules™ TMS570, C2000™, and Various
Functional-Safety Architecture Microcontrollers
• Supply Rails
– Input voltage range:
– 5.8 V to 36 V (CAN, I/O, MCU Core, and
Sensor-Supply Regulators Functional)
– 4.5 V to 5.8 V (3.3 V I/O and MCU Core
Regulators Functional)
– 6-V Asynchronous Switch Mode Preregulator
With Internal FET, 1.3-A Output Current
– 5-V (CAN) Supply Voltage, Linear Regulator
With Internal FET, 300-mA Output Current
– 3.3-V or 5-V (MCU I/O) Voltage, Linear
Regulator With Internal FET, 300-mA Output
Current
– 0.8-V to 3.3-V Adjustable (MCU Core Voltage),
Linear Regulator Controller With External FET
– 3.3-V to 9.5-V Adjustable Sensor Supply: Linear
Tracking Regulator With Internal FET, 100-mA
Output Current, and Protection Against Short-toSupply and Short-to-Ground
– Charge Pump: Typically 12 V Above Battery
Voltage
• Power Supply and System Monitoring
– Independent Undervoltage and Overvoltage
Monitoring on All Regulator Outputs, Battery
Voltage, and Internal Supplies
– Independent Voltage References for Regulator
References and Voltage Monitoring. VoltageMonitoring Circuitry With Independent Bandgap
Reference and Separate Supply Input Pin
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– Self-Check on all Voltage Monitoring (Automatic
During Power-Up and After Power-Up Initiated
by External MCU)
– All Supplies With Internal FETs Protected With
Current-Limit and Overtemperature Shutdown
Microcontroller (MCU) Interface
– Watchdog: Trigger Mode (OPEN/CLOSE
Window) or Question and Answer Mode
– MCU Error-Signal Monitor For Lock-Step DualCore MCUs Including Hercules™ TMS570,
C2000™, and Various Functional-Safety
Architecture MCUs Using Pulse-Width
Modulation (PWM) Error Output
– DIAGNOSTIC State for Performing Device SelfTests, Diagnostics, and External Interconnect
Checks
– SAFE State for Device and System Protection
on Error Event Detection
– Clock Monitor for Internal Oscillator
– Self-Tests for Analog- and Digital-Critical
Circuits Executed With Every Device Power Up
or Activated by MCU in DIAGNOSTIC State
– CRC on Nonvolatile Memory, Device and
Configuration Registers
– Reset Circuit and Output Pin for MCU
– Diagnostic Output Pin Allowing MCU to Observe
Through a Multiplexer Internal Analog and
Digital Signals of the Device
Serial Peripheral Interface (SPI)
– Configuration Registers
– Watchdog Question and Answers
– Diagnostic Status Readout
– Compliant With 3.3-V and 5-V Logic Levels
Enable Drive Output for Disabling Safing-Path
or External Power-Stages on Detected SystemFailure
Wakeup Through IGNITION Pin or CAN
WAKEUP Pin
Package: 32-Pin HTSSOP PowerPAD™ IC
Package
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
Not Recommended for New Designs
TPS65381-Q1
SLVSBC4G – MAY 2012 – REVISED JUNE 2017
1.2
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www.ti.com
Applications
Safety Automotive Applications
– Power Steering: Electrical Power Steering
(EPS) and Electro Hydraulic Power Steering
(EHPS)
– Braking: Anti-Lock Brake System (ABS),
Electronic Stability Control (ESC), and Electric
Parking Brake
– Advanced Driver Assistance Systems (ADAS)
– Suspension
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Industrial Safety Applications
– Safety Programmable-Logic Controllers (PLCs)
– Safety I/O Control Modules
– Test and Measurement
– Railway and Subway Signal Control and
Safety Modules
– Elevator and Escalator Safety Control
– Wind Turbine Control
Description
The TPS65381-Q1 device is a multirail power supply designed to supply microcontrollers (MCUs) in
safety-relevant applications, such as those found in automotive and industrial markets. The device
supports Texas Instruments’ Hercules™ TMS570 MCU and C2000™ MCU families, and various other
MCUs with dual-core lockstep (LS) or loosely-coupled architectures (LC).
The TPS65381-Q1 device integrates multiple supply rails to power the MCU, controller area network
(CAN), or FlexRay, and an external sensor. An asynchronous-buck switch-mode power-supply converter
with an internal FET converts the input supply (battery) voltage to a 6-V preregulator output. This 6-V
preregulator supplies the other regulators. The device supports wakeup from IGNITION or wakeup from
the CAN transceiver.
The integrated, fixed 5-V linear regulator with internal FET can be used for a CAN or FlexRay transceiver
supply for example. A second linear regulator, also with an internal FET, regulates to a selectable 5-V or
3.3-V output which, for example, can be use for the MCU I/O voltage.
The TPS65381-Q1 device includes an adjustable linear-regulator controller, requiring an external FET and
resistor divider, that regulates to an adjustable voltage of between 0.8 V and 3.3 V which may be used for
the MCU core supply.
The integrated sensor supply can be run in tracking mode or adjustable output mode and includes shortto-ground and short-to-battery protection. Therefore, this regulator can power a sensor outside the module
or electronic control unit (ECU).
The integrated charge pump provides overdrive voltage for the internal regulators. The charge pump can
also be used in a reverse-battery protection circuit by using the charge-pump output to control an external
NMOS transistor. This solution allows for a lower minimum-battery-voltage operation compared to a
traditional reverse-battery blocking diode when the device must be operational at the lowest possible
supply voltages.
The device monitors undervoltage and overvoltage on all regulator outputs, battery voltage, and internal
supply rails. A second bandgap reference, independent from the main bandgap reference, is used for the
undervoltage and overvoltage monitoring, to avoid any drifts in the main bandgap reference from being
undetected. In addition, regulator current-limits and temperature protections are implemented.
The TPS65381-Q1 device has monitoring and protection functions, which include the following: watchdog
with trigger and question and answer modes, MCU error-signal monitor, clock monitoring on internal
oscillators, self-check on the clock monitor, cyclic redundancy check (CRC) on nonvolatile memory, a
diagnostic output pin allowing the MCU to observe internal analog and digital signals of the device, a reset
circuit and output pin for the MCU, and an enable drive output to disable the safing-path or external-power
stages on detected faults. A built-in self-test (BIST) monitors the device functionality automatically at
power-up. A dedicated DIAGNOSTIC state allows the MCU to check TPS65381-Q1 monitoring and
protection functions.
The TPS65381-Q1 device is offered in a 32-pin HTSSOP PowerPAD package.
2
Device Overview
Copyright © 2012–2017, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: TPS65381-Q1
Not Recommended for New Designs
TPS65381-Q1
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SLVSBC4G – MAY 2012 – REVISED JUNE 2017
Device Information (1)
PART NUMBER
PACKAGE
TPS65381-Q1
(1)
1.4
HTSSOP (32)
BODY SIZE (NOM)
11.00 mm × 6.20 mm
For all available packages, see the orderable addendum at the end of the data sheet.
Typical Application Diagram
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VBAT_SAFING
2
VCP
SEL_VDD3/5 31
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CP1
IGN 30
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CP2
VBATP 29
5
PGND
SDN6 28
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NRES
VDD6 27
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DIAG_OUT
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NCS
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SDI
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SDO
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SCLK
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RSTEXT
13
ERROR/WDI
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CANWU
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VSFB1
16
VSIN
ENDRV 32
VDD6
VDD6
ESR
VDD1_G 26
PGND 25
VDD1_SENSE 24
GND 23
VDDIO 22
VDD3/5 21
VDD5 20
GND 19
VTRACK1 18
VSOUT1 17
Copyright © 2016, Texas Instruments Incorporated
Figure 1-1. Typical Application Diagram
Device Overview
Copyright © 2012–2017, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: TPS65381-Q1
3
Not Recommended for New Designs
TPS65381-Q1
SLVSBC4G – MAY 2012 – REVISED JUNE 2017
www.ti.com
Table of Contents
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3
4
Device Overview ......................................... 1
5.4
Device Functional Modes
1.1
Features .............................................. 1
5.5
Register Maps ....................................... 92
1.2
Applications ........................................... 2
1.3
Description ............................................ 2
6.1
Application Information
1.4
Typical Application Diagram .......................... 3
6.2
Typical Application ................................. 116
6.3
System Examples .................................. 124
Revision History ......................................... 4
Pin Configuration and Functions ................... 27
Specifications ........................................... 29
4.1
5
7
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Absolute Maximum Ratings ......................... 29
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4.3
Recommended Operating Conditions ...............
4.4
Thermal Information .................................
4.5
Electrical Characteristics ............................
4.6
Timing Requirements ...............................
4.7
Switching Characteristics ...........................
4.8
Typical Characteristics ..............................
Detailed Description ...................................
5.1
Overview ............................................
5.2
Functional Block Diagram ...........................
5.3
Feature Description .................................
4.2
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ESD Ratings
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Application and Implementation ................... 116
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Power Supply Recommendations ................. 129
Layout ................................................... 129
8.1
Layout Guidelines .................................. 129
8.2
Layout Example .................................... 131
8.3
Power Dissipation and Thermal Considerations ... 132
Device and Documentation Support .............. 134
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9.1
Device Support..................................... 134
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9.2
Documentation Support ............................ 134
37
9.3
Receiving Notification of Documentation Updates. 134
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9.4
Community Resources............................. 134
39
9.5
Trademarks ........................................ 134
39
9.6
Electrostatic Discharge Caution
39
9.7
Glossary............................................ 135
40
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135
10 Mechanical, Packaging, and Orderable
Information ............................................. 135
2 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (May 2016) to Revision G
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Changed the Features list for Supply rails to show output current instead of current limit. Added general current
limit bullet in the FEATURES list ................................................................................................... 1
Added acronym definitions .......................................................................................................... 1
Changed recommended maximum voltage for VBATP and VBAT_SAFING in the Recommended Operating
Conditions table ...................................................................................................................... 8
Changed the PIN Function table descriptions to clarify device operation ................................................... 27
Changed the max value for the charge-pump voltages from 52 V to lesser of VBATP + 16V or 52 V with
footnote in the ABSOLUTE MAXIMUM RATINGS table ....................................................................... 29
Changed M1.12 and M1.13 Sensor supply feedback and supply voltage by combining in M1.12 with conditions
of use for the Sensor supply output and feedback voltage to match how the sensor supply is used. Changed the
maximum to 18 V in the ABSOLUTE MAXIMUM RATINGS table ............................................................ 29
Deleted M1.13 Sensor supply output voltage by combining with M1.12 in the ABSOLUTE MAXIMUM RATINGS
table ................................................................................................................................... 29
Changed the table note for Absolute Maximum Ratings ...................................................................... 29
Changed changed recommended operating condition descriptions for R1.1, R1.2 and R1.3 to make the
operation of device more clear in the Recommended Operating Conditions ............................................... 30
Deleted recommended operating condition R1.3a and R1.3b, VBAT_SAFING impact to device operation was
included in R1.2 and R1.3 to make the operation of device more clear in the Recommended Operating Conditions 30
Changed link formats throughout document ..................................................................................... 30
Changed recommended maximum voltage for VBATP and VBAT_SAFING in the Recommended Operating
Conditions table ..................................................................................................................... 30
Changed the Thermal Metric table and Derating Profile for Power Dissipation Based on High-K JEDEC PCB in
the Thermal Information section. .................................................................................................. 31
Changed application report link ................................................................................................... 31
Changed the Derating Profile for the Power Dissipation in the Thermal Information table and the Power
Dissipation and Thermal Considerations section ............................................................................... 31
Deleted R1.3b from the operating conditions in the Electrical Characteristics section since VBAT_SAFING
condition R1.3b was merged with R1.2 in the Recommended Operating Conditions, Timing Requirements and
Revision History
Copyright © 2012–2017, Texas Instruments Incorporated
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Product Folder Links: TPS65381-Q1
Not Recommended for New Designs
TPS65381-Q1
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SLVSBC4G – MAY 2012 – REVISED JUNE 2017
Switching Characteristics sections ...............................................................................................
Changed VDD6, POS 1.1 to only volts as units for consistency in the ELECTRICAL CHARACTERISTICS table ....
Deleted Hysteresis parameter from TprotVDD6 (POS 1.7) in the ELECTRICAL CHARACTERISTICS table. ...........
Changed VDD5, POS 2.1 to only volts as units for consistency in the ELECTRICAL CHARACTERISTICS table ....
Changed POS 2.3 test condition to Load step 20% to 80% in 5 µs, with CVDD5 = 5 µF for VDD5 output voltage
dynamic parameter in the Electrical Characteristics table .....................................................................
Changed PSRR to > 40 dB typical n the Electrical Characteristics for parameter 2.6 .....................................
Deleted Hysteresis parameter from TprotVDD5 (POS 2.13) in the ELECTRICAL CHARACTERISTICS table. .........
Changed all references of VDD3_5 to VDD3/5 for consistency in the datasheet ..........................................
Added clarification on VDD6 current limit and duty cycle in the Electrical Characteristics section .......................
Added clarification on IVDD5_limit current limit in the Electrical Characteristics section ......................................
Changed VDD3/5, POS 3.1 to only volts as units for consistency in the ELECTRICAL CHARACTERISTICS table ..
Changed POS 3.3 into 3.3a for 3.3 V setting and 3.3v for 5 V setting for VDD3/5 output voltage dynamic
parameter in the Electrical Characteristics table ................................................................................
Changed POS 3.3a and 3.3b test condition to Load step 20% to 80% in 5 µs, with CVDD3/5 = 5 µF for VDD3/5
output voltage dynamic parameter in the Electrical Characteristics table ...................................................
Changed the minimum for POS 3.3a from 3.17 V to 3.15 V, VDD3/5 output voltage dynamic parameter in the
Electrical Characteristics table.....................................................................................................
Changed PSRR to > 40 dB typical n the Electrical Characteristics for parameter 3.6 .....................................
Deleted Hysteresis parameter from TprotVDD3/5 (POS 3.13) in the ELECTRICAL CHARACTERISTICS table. ........
Changed MAX value of VDD1SENSE(4.2) from 0.816 mV to 0.808 mV in the Electrical Characteristics table ..........
Changed VDD1SENSE POS 4.2 to only volts as units for consistency in the ELECTRICAL CHARACTERISTICS
table ...................................................................................................................................
Changed VDD1dyn, POS 4.7, to typical due to dependency on external FET choice in the Electrical
Characteristics table ...............................................................................................................
Changed the VDD1max, POS 4.8, to specific VDD1 output voltage range for test condition in the Electrical
Characteristics table ...............................................................................................................
Changed PSRR to > 40 dB typical n the Electrical Characteristics for parameter 4.9 .....................................
Added clarification on IVDD3/5 load current at power up in the Electrical Characteristics section ..........................
Added clarification on IVDD3/5_limit current limits in the Electrical Characteristics section ...................................
Changed MVVSOUT1 min and max values from –25 and 25 to –35 and 35 in the ELECTRICAL
CHARACTERISTICS table .........................................................................................................
Changed VSFB1, POS 5.3 to only volts as units for consistency in the ELECTRICAL CHARACTERISTICS table...
Changed Test Condition and PSRR to > 40 dB typical sensor supply to clarify the test in the Electrical
Characteristics for parameters 5.6 ................................................................................................
Changed POS 5.11, VSOUT1SH, for clarity of condition for output short circuit voltage range and changed
maximum voltage to 18 V in the ELECTRICAL CHARACTERISTICS table ................................................
Deleted Hysteresis parameter from TprotVSOUT1 (POS 5.13) in the ELECTRICAL CHARACTERISTICS table. .......
Changed IVSOUT1_limit, POS 5.14 minimum from 100 mA to 120 mA in the ELECTRICAL CHARACTERISTICS table
Added clarification on IVSOUT1 load current and power dissipation in the Electrical Characteristics section .............
Changed min value for VDD3/5_UVhead to 155 mV from 170 mV for 3.3-V setting in the ELECTRICAL
CHARACTERISTICS table POS 6.13 ............................................................................................
Changed VDD_UV POS 6.16 units from ratio to mV for consistency in the ELECTRICAL CHARACTERISTICS
table ...................................................................................................................................
Changed VDD1_OV POS 6.17 MIN from 824 mV to 816 mV in the ELECTRICAL CHARACTERISTICS table .......
Changed VDD1_OV POS 6.17 units from ratio to mV for consistency in the ELECTRICAL CHARACTERISTICS
table ...................................................................................................................................
Deleted VSOUT1_UV hysteresis parameter (typical), POS 6.19a in the ELECTRICAL CHARACTERISTICS table. .
Deleted VSOUT1_OV hysteresis parameter (typical), POS 6.20a in the ELECTRICAL CHARACTERISTICS table. .
Changed I_IGN_rev parameter (7.4), -1, from MAX to MIN to match polarity in the ELECTRICAL
CHARACTERISTICS table ........................................................................................................
Changed I_CAN_rev parameter (7.8), -1, from MAX to MIN to match polarity in the ELECTRICAL
CHARACTERISTICS table ........................................................................................................
Added clarification to POS 10.1, 10.2 and 10.3 by using pin names in parameter field instead of footnote and
adding SEL_VDD3/5 pin to 10.1 and 10.2 in the ELECTRICAL CHARACTERISTICS table ............................
Changed tdelayVDD5 max from 2.5 ms to 5 ms in the Timing Requirements table ...........................................
Changed tdelayVDD3/5 max from 2.5 ms to 5 ms in the Timing Requirements table .........................................
Changed tdelayVDD1 max from 2.5 ms to 5 ms in the Timing Requirements table ...........................................
Changed VBATP_deglitch minimum from 200 µs to 180 µs and maximum from 280 µs to 260 µs in the Timing
Requirements table for POS 6.7...................................................................................................
Revision History
Copyright © 2012–2017, Texas Instruments Incorporated
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Product Folder Links: TPS65381-Q1
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TPS65381-Q1
SLVSBC4G – MAY 2012 – REVISED JUNE 2017
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Changed minimum for tWD_pulse in the ELECTRICAL CHARACTERISTICS table to 14.25 µs from 28 µs ..............
Deleted tERROR_WDI_deglitch in the ELECTRICAL CHARACTERISTICS µs .....................................................
Changed min value for thigh(13.3) to 85.7 ns in the ELECTRICAL CHARACTERISTICS table. .........................
Changed format of graph ..........................................................................................................
Added clarification of operation in the VDD6 Buck Switch Mode Power Supply section .................................
Added a note to the VSOUT1 register clarifying VSOUT1_EN through RESET state in the VSOUT1 Linear
Regulator section ....................................................................................................................
Added note in the Wake-Up section to not send WR_CAN_STBY command while CANWU and/or IGN are still
high. ...................................................................................................................................
Changed WDT_FAIL_CNT and WD_FAIL_CNT to WD_FAIL_CNT[2:0] throughout document .........................
Changed section heading levels from 5.4.1.1 through 5.4.1.20...............................................................
Changed the VCP17_OV impact on device behavior in the Voltage Monitoring Overview table and the Internal
Errors Signals table. ................................................................................................................
Changed the VCP12_OV the impact on device behavior in the Voltage Monitoring Overview table and the
Internal Errors Signals table. ......................................................................................................
Changed the MAIN_BG and VMON_BG UV and OV impact on device behavior in the Voltage Monitoring
Overview table and the Internal Errors Signals table. .........................................................................
Changed all _UVN Signal Names in the Internal Error Signals table and Digital MUX section to Nxxx_UV for
consistency in datasheet for inverted logic signal names with N at the beginning of the name. .........................
Changed the signal name from VCP_OV to VCP17_OV for D1.7 in the Internal Error Signals table. Also
changed the device state from Not changed for NRES and ENDRV to LOW, and State to STANDBY ................
Changed the max deglitch for VDD5_OT, VDD3/5_OT and VSOUT1_OT to 64us in the Internal Error Signals
table ..................................................................................................................................
Changed the naming convention of EN_VDD5_OT and EN_VDD3/5_OT to NMASK_VDD5_OT and
NMASK_VDD3/5_OT to clarify option of these configuration bits throughout the datasheet ............................
Changed the description of VDD5_OT in the Internal Error Signals table for clarity ......................................
Changed the VMON_TRIM_ERR deglitch time minimum from 15 to 5 µs and maximum from 30 to 10 µs in the
Internal Error Signals table ........................................................................................................
Changed the VMON_TRIM_ERR device state when flag is set to NRES = LOW from not changed, ENDRV =
LOW from not changed and Device State to STANDBY from not changed in the Internal Error Signals table .......
Added clarification footnote to VDD5_CL internal signal in the Internal Error Signals table .............................
Changed Analog BIST Run States diagram for to clarify operation in the Analog Built-In Self-Test section ...........
Changed ABIST_UVOV_ERR and ABIST_OV_UV to ABIST_ERR throughout document ...............................
Added notes to clarify considerations needed if a manual run of LBIST is done in DIAGNOSTIC or ACTIVE state
in the Logic Built-In Self-Test (LBIST) section...................................................................................
Added clarification in the Analog Built-In Self-Test (ABIST) and Logic Built-In Self-Test (LBIST) sections to
clarify operation .....................................................................................................................
Changed paragraphs for VSOUT1, VDD6 and VDD3/5 overtemperature and current limit in the Junction
Temperature Monitoring and Current Limiting section to clarify device operation ..........................................
Changed the descriptions in the Overtemperature and Overcurrent Protection Overview table to clarify device
operation and made naming for thermal shutdown consistent to overtemperature .......................................
Changed Section title to Diagnostic MUX and Diagnostic Output Pin (DIAG_OUT) .......................................
Added clarity to the DIAG_OUT description in the Diagnostic Output Pin DIAG_OUT section...........................
Added clarification to the SPI Interface Note for the use of the SPI in a bus while DIAG_OUT MUX is enabled in
the Diagnostic Output Pin DIAG_OUT section ..................................................................................
Changed values and clarity of AMUX operation and added minimum output resistance in the Analog MUX
Selection table .......................................................................................................................
Changed WDT_ signal names to WD_, WD_RES_EN toWD_RST_EN, NMASK_VDD1_OV to
NMASK_VDD1_UV_OV, and EN_DRV to ENDRV throughout document ..................................................
Changed NRST_EXT_IN to NRES_EXT_IN for consistency with pin name ................................................
Changed WDI/Error to Error/WDI throughout document .......................................................................
Changed the Watchdog Question (Token) Generation image in the Watchdog Timer Configuration for Question
and Answer Configuration section ................................................................................................
Changed Figure for Watchdog Answer Calculation in the Question (Token) Generation section to remove
FDBK[3:0] impact on Answer-x byte calculation ................................................................................
Changed TOKEN_ERR bit name to ANSWER_ERR to more accurately describe the error the bit indicates
throughout the datasheet ..........................................................................................................
Changed SEQ_ERR status bit in Table WD_STATUS Bits Versus Possible Watchdog Sequence Events section ...
Added a note to clarify impact of changing SAFETY_ERR_PWM_L or SAFETY_ERR_PWM_H while the MCU
ESM is running in the MCU Error Signal Monitor (MCU ESM) section ......................................................
Revision History
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Copyright © 2012–2017, Texas Instruments Incorporated
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Product Folder Links: TPS65381-Q1
Not Recommended for New Designs
TPS65381-Q1
www.ti.com
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Added a note to clarify MCU ESM diagnostics in the MCU Error Signal Monitor (MCU ESM) section .................. 76
Added clarification in the MCU Error Signal Monitor (MCU ESM) section................................................... 76
Added clarification for the LOW minimum and maximum duration time for the MCU ESM in the TMS570 Mode
section ................................................................................................................................ 76
Changed the time range for HIGH and LOW pulse duration in PWM Mode section from 5 µs to 15 µs (minimum)
and 1.28 ms to 3.8 ms (maximum) for consistency along with additional clarifications of operation .................... 78
Added clarification for HIGH and LOW pulse register minimum and maximum pulse timing for the MCU ESM in
the PWM Mode section ............................................................................................................. 78
Added a note to clarify MCU ESM to MCU synchronization in the MCU Error Signal Monitor (MCU ESM) PWM
Mode section ......................................................................................................................... 79
Added note to clarify uncleared CFG_CRC_ERR impact to state diagram during DIAGNOSTIC state in the list of
steps in the Device Configuration Register Protection section ................................................................ 83
Changed the Reset and Enable Circuit image to clarify operation ........................................................... 84
Changed section title from Device Controller State Diagram to Device Operating States and clarified device
operating states operation ......................................................................................................... 86
Changed the STANDBY, RESET, DIAGNOSTIC, ACTIVE and SAFE state text descriptions in their sections to
clarify device operation. ............................................................................................................ 87
Added clarification in the RESET STATE list .................................................................................... 87
Added clarification on BIST running on exit of RESET State to the RESET STATE section ............................. 88
Added note to clarify considerations needed if a manual run of LBIST is done in the DIAGNOSTIC state in the
DIAGNOSTIC state section ........................................................................................................ 89
Added note to clarify considerations needed if a manual run of LBIST is done in the ACTIVE state in the
ACTIVE state section ............................................................................................................... 90
Added note to clarify SAFE state time-out possible state transitions due to the SAFE state time-out in the SAFE
state section.......................................................................................................................... 91
Added the Power on Reset (NPOR) section to clarify device operation. .................................................... 91
Changed the STAT[2] and STAT[0] descriptions for SPI errors in the Device Status Flag Byte Response table...... 93
Added note to explain additional SPI diagnostics in the Device Status Flag Byte Response section ................... 93
Added SPI Register Write Access Lock (SW_LOCK command) section in the Register Map section ................. 94
Added clarification on which registers are re-initialized to default values after LBIST run in Register Map section .. 95
Added clarification to WR_CAN_STBY that this command is only valid with data 00h in the SPI Command Table .. 95
Deleted note "SPI WR update can occur only in the DIAGNOSTIC and ACTIVE states" for
WR_SAFETY_BIST_CTRL command in the SPI Command Table .......................................................... 95
Changed SAFE_CFG_CRC to SAFETY_CFG_CRC throughout the datasheet for consistency of the register
name ................................................................................................................................. 96
Changed register bit descriptions in the DEV_CFG2 Register table to clarify device operation ......................... 99
Added clarification on VDD5_UV operation when VDD5_EN = 0 in the VMON_STAT_2 Register .................... 101
Added clarity to note on VDD5_ILIM bit description in the SAFETY_STAT_1 Register table ........................... 102
Changed the D[5] NRES_ERR, LBIST_ERR, ABIST_ERR, LBIST_RUN and ABIST_RUN register descriptions
in SAFETY_STAT_3 Register .................................................................................................... 104
Added to the NRES_ERR description in the SAFETY_STAT_3 Register table ........................................... 104
Changed the SPI_ERR[1:0] description in the SAFETY_STAT_4 Register table ......................................... 105
Changed the LOCLK description in the SAFETY_STAT_4 Register table................................................. 105
Changed MCU_ERR bit description inSAFETY_STAT_4 Register table .................................................. 105
Changed WD_ERR bit and NRES_ERR bit description inSAFETY_STAT_4 Register table to clarify operation..... 105
Deleted note "Write update can only occur in the DIAGNOSTIC and ACTIVE states." for
WR_SAFETY_BIST_CTRL command in the SAFETY _BIST_CTRL Register ............................................ 107
Changed SAFETY_STATUS_2 to SAFETY_STAT_2 for consistency in the datasheet ................................ 107
Changed NO_ERROR bit description to improve clarity in the SAFETY_CHECK_CTRL Register table ............. 108
Changed ERROR_PIN_FAIL bit description in the SAFETY_ERR_STAT Register table ............................... 110
Changed to clarity the WD_FAIL bit description in the SAFETY_ERR_STAT Register table ........................... 110
Changed ERR_CNT to DEV_ERR_CNT[3:0] throughout datasheet for consistency in naming. ....................... 111
Added clarification on the TOKEN_SEED[3:0] to the description in the WD_TOKEN_FDBCK Register table ....... 113
Changed WD_FAIL_TH description in the WDT_TOKEN_VALUE Register table for consistency ..................... 114
Changed added clarification on clearing of the ANSWER_ERR bit in the WD_STATUS Register table ............. 114
Deleted "This bit is set to 1 when switching between the Trigger and Q&A Mode" and added clarification on how
to clear the WD_CFG_CHG bit description in the WD_STATUS Register table ......................................... 114
Changed TIME_OUT bit description in the WD_STATUS Register table to clarify how the bit is cleared. ........... 114
Added ANSWER_EARLY bit operation during trigger mode to the WD_STATUS Register table ..................... 114
Changed the description of VDD_EN in the SENS_CTRL Register table ................................................. 115
Revision History
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Changed the description of VSOUT1_EN in the SENS_CTRL Register table ............................................
Clarified capacitors, resistor tolerance impact on regulation and monitoring in the Typical Application Diagram ....
Clarified resistor tolerance impact on regulation and monitoring in the VDD1 Linear Controller Section ..............
Clarified resistor tolerance impact on regulation and monitoring in the Alternative Use for VSOUT1 Tracking
Linear Regulator, Configured for 6-V Output Tracking VDD3/5 In 3.3-V Mode Section..................................
Clarified resistor tolerance impact on regulation and monitoring in the Alternative Use for VSOUT1 Tracking
Linear Regulator, Configured for 9-V Output Tracking to 5-V Input from VDD5 Section.................................
Clarified resistor tolerance impact on regulation and monitoring in the Alternative Use for VSOUT1 Tracking
Linear Regulator, Configured in Non-tracking Mode Providing a 4.5-V Output Section ..................................
Changed and clarified the System Examples drawings ......................................................................
Changed and clarified the Software Flowchart for Configuring and Synchronizing the MCU With the Watchdog in
Q&A Mode flowchart ..............................................................................................................
Changed and clarified the Software Flowchart for Configuring and Synchronizing the MCU With the Watchdog in
Trigger Mode flowchart............................................................................................................
Added Power Dissipation and Thermal Considerations in the Layout section ............................................
Added Receiving Notification of Documentation Updates section ..........................................................
Changed the Electrostatic Discharge Caution statement.....................................................................
Changes from Revision E (July 2015) to Revision F
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Added clarity to the PIN Function table descriptions ...........................................................................
Added clarification in Recommended Operating Conditions that GND = PGND ...........................................
Changed (1)maximum VBAT_SAFING to 36 V in the Recommended Operating Conditions table for parameter
1.3a to be consistent with VBATP ................................................................................................
Added VBAT_SAFING input supply voltage range for normal operation RECOMMENDED OPERATING
CONDITIONS table .................................................................................................................
Added clarification in statement for the ELECTRICAL CHARACTERISTICS table by adding VBAT_SAFING
recommended operating range in addition to VBATP recommended operating range ....................................
Changed description of parameter from Test Condition column to a footnote on the parameter in Electrical
Characteristics table for parameters 1.2, 1.7, 2.1, 2.13, 3.1, 3.2, 3.13, 4.2, 5.1, 5.2, 5.3, 5.13, 6.4, 6.5, 6.7, 6.22,
6.23 ...................................................................................................................................
Added clarification on direct loading of VDD6 in the IVDD6 Electrical Characteristics table ................................
Changed the Test Condition column to parameter description the ELECTRICAL CHARACTERISTICS table for
2.2, 3.1, 3.2, 5.1, 5.3a, 5.4, 9.3 ....................................................................................................
Added clarification on resistor divider on regulation tolerance of VDD1 in the VDD1 section of the Electrical
Characteristics table ................................................................................................................
Deleted test condition from TJ the Electrical Characteristics table for 5.5 because it is same as overall electrical
characteristics table ................................................................................................................
Changed Test Condition for input to sensor supply to VSIN from VBATP in the Electrical Characteristics for
parameters 5.6, 5.7, 5.8 ............................................................................................................
Changed the description for indication of VBATP_UV (6.1, 6.2) in the ELECTRICAL CHARACTERISTICS table. ..
Added the condition of VBATP = VBAT_SAFING to 6.1, 6.2, 6.3, 6.4, 6.5, 6.8, 6.9, 6.10, 6.11, 6.12, 6.13, 6.14,
6.15, 6.16, 6.17 in the ELECTRICAL CHARACTERISTICS table. ..........................................................
Added the condition of VBATP = VBAT_SAFING = 12 V to 7.1, 7.2, 7.3, 7.4, 7.7 and 7.8 the ELECTRICAL
CHARACTERISTICS table .........................................................................................................
Changed test condition for the I_IGN parameter (7.4) to 36 V, added clarification that VBATP = VBAT_SAFING
= 36 V in the ELECTRICAL CHARACTERISTICS table ......................................................................
Changed test condition for the I_CANWU parameter (7.7) to 36 V, added clarification that VBATP =
VBAT_SAFING = 36 V in the ELECTRICAL CHARACTERISTICS table ...................................................
Added clarification for Cpump and Cstore connections in the Charge Pump section of the ELECTRICAL
CHARACTERISTICS table .........................................................................................................
Changed the Test Condition for NRES output low (paramater 9.1) level from 5mA to 2mA in the ELECTRICAL
CHARACTERISTICS table ........................................................................................................
Added clarification in statement for the Timing Requirements table by adding VBAT_SAFING recommended
operating range in addition to VBATP recommended operating range ......................................................
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The recommended maximum operating voltage for VBATP and VBAT_SAFING is listed as 34 V, just below the overvoltage detection
thresholds for VBATP, VBATP_OVrise and VBATP_OVfall. TI recommends enabling overvoltage detection on VBATP (default is enabled,
MASK_VBATP_OV = 0). TI also recommends evaluating the thermal and power dissipation of the device in the application and ensure
the design has adequate thermal management for operation at the necessary supply voltage level.
Revision History
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Changed description of parameter from Test Condition column to a footnote on the parameter in the Timing
Requirements table for parameters 6.7, 11.1 ................................................................................... 36
Changed to clarify IGNITION and CAN WAKE-UP parameters (7.6 and 7.9) in TIMING REQUIREMENTS table .... 36
Added clarification in statement for the Switching Characteristics table by adding VBAT_SAFING recommended
operating range in addition to VBATP recommended operating range ...................................................... 37
Added clarification of resistor divider feedback impact in the VDD1 Linear Regulator section ........................... 41
Changed pin name to VTRACK1 for pin determining tracking or non-tracking mode in VSOUT1 Linear Regulator
section describing what occurs after completion of the VDDx ramp-up ..................................................... 42
Added note in the Wake-Up section on how to wake up the device for systems that need to power up and down
with the power supply and do not need IGN or CANWU....................................................................... 44
Changed the Power-Up and Power-Down Behavior image for clarity ....................................................... 45
Changed the VDD6 UV bit to D6 from D7 in the Voltage Monitoring Overview table ..................................... 48
Changed the name for VSOUT1 current-limit to VSOUT1_CL in the Internal Error Signals table ...................... 50
Changed all references to the sensor supply to VSOUT1 for consistency .................................................. 50
Changed to clarify ABIST functionality in the Analog Built-In Self-Test (ABIST) section .................................. 52
Changed LBIST coverage in the Logic Built-In Self-Test (LBIST) section ................................................... 53
Changed to clarify LBIST functionality in the Logic Built-In Self-Test (LBIST) section..................................... 53
Changed the impact on device behavior for VSOUT1 thermal protect and over current in the Thermal and Over
Current Protect ion Overview table .............................................................................................. 55
Changed the name for VSOUT1 current-limit to VSOUT1_CL in the Digital MUX Selection table ...................... 59
Changed and clarified Watchdog timer text in the Watchdog Timer (WDT) section ...................................... 60
Changed the all references of ERROR/WDTI pin to ERROR/WDI pin for consistency .................................... 61
Added clarification on the watchdog fail counter and reset event requirements in the Watchdog Fail Counter,
Status, and Fail Event section ..................................................................................................... 61
Added the Watchdog Sequence section ........................................................................................ 62
Changed and clarified the equations for watchdog WINDOW 1 and WINDOW 2 (tWOW and tWCW) timing
Watchdog Sequence section ..................................................................................................... 62
Added the MCU to Watchdog Synchronization section ....................................................................... 63
Added note on TIME_OUT flag not latching during active SPI frame (nCS low) in the Trigger Mode (Default
Mode) section ........................................................................................................................ 63
Added clarification of the impact of a bad event on the watchdog sequence in the Trigger Mode Section and
updated the images ................................................................................................................ 66
Added note on TIME_OUT flag not latching during active SPI frame (nCS low) in the Q&A Mode section ............ 67
Changed and clarified the watchdog in Q&A mode answer sequence requirements in the Watchdog Q&A
Related Definitions section ......................................................................................................... 68
Changed the Watchdog Sequence in Q&A Mode image in the Watchdog Sequence in Q&A Mode section to
update the Answer-3, Answer-2, Answer-1 requirements ..................................................................... 69
Added clarification on when the watchdog Markov chain and question counter are re-initialized in the Question
(Token) Generation) section ....................................................................................................... 69
Added for clarification the Device Controller State Diagram .................................................................. 86
Changed SAFETY_ERR_STATUS to SAFETY_ERR_STAT so all references to this register are consistent ......... 88
Added clarification on using the DIAG_EXIT_MASK bit for software debug to the end of the DIAGNOSTIC
STATE section ....................................................................................................................... 89
Added note to explain conditions leading to inadvert setting of SDO ERROR bit in the Device Status Flag Byte
Response section ................................................................................................................... 93
Added clarification on reserved bits (RSV) in the Register Map section .................................................... 95
Changed DEV_STATE to DEV_STAT for Device Status in Register table for consistency ............................... 97
Deleted VSOUT1_ILIM in the SAFETY_STAT_1 Register table and made bit D3 a reserved bit (RSV) .............. 102
Changed VDD_3_5_SEL description in SAFETY_FUNC_CFG Register table ........................................... 109
Changed and clarified the WDT_TOKEN_FDBCK Register table .......................................................... 113
Changed and clarified the WDT_WIN1_CFG Register table ................................................................ 113
Changed and clarified the WDT_WIN2_CFG Register table ................................................................ 113
Changed and clarified the WDT_TOKEN_VALUE Register table .......................................................... 114
Changed and clarified the WDT_STATUS Register table ................................................................... 114
Changed and clarified the WDT_ANSWER Register table .................................................................. 115
Changed and clarified the Software Flowchart for Configuring and Synchronizing the MCU With the Watchdog in
Q&A Mode flowchart .............................................................................................................. 127
Added the Software Flowchart for Configuring and Synchronizing the MCU With the Watchdog in Trigger Mode
flowchart ............................................................................................................................ 128
Added clarity for VBAT_SAFING in the Power Supply Recommendations section ....................................... 129
Revision History
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Changes from Revision D (May 2015) to Revision E
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Changed the maximum UV value for VDD1 from 0.97 to 0.98 in the Voltage Monitoring Overview table. Also
updated the VDD output voltage information ....................................................................................
Changed the MAX value for VDD1_UVN from 0.97 to 0.98 in the Internal Error Signals table. Also updated the
Device State When Flag Is Set cells for VDD1_UVN ..........................................................................
Added clarification on the watchdog fail counter and reset event requirements in the Watchdog Enable Function
image .................................................................................................................................
Added clarification on the watchdog fail counter and reset event requirements in the Device Controller State
Diagram...............................................................................................................................
Changes from Revision C (March 2015) to Revision D
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Changed ƒclk_VDD6 POS 1.5 minimum and maximum units from % to kHz for consistency in the ELECTRICAL
CHARACTERISTICS table ........................................................................................................
Changed MIN value of VDD1SENSE(4.2) from -2% to -1% in the Electrical Characteristics table ........................
Changed MAX value of VDD1 undervoltage level (6.16) from 0.97 to 0.98 in the Electrical Characteristics table ...
Changed description of un-used VDD1 regulator in the VDD1 Linear Regulator section .................................
Added clarification in the NMASK_VDD1_UV_OV description in the DEV_CFG1 Register table........................
Changes from Revision B (July 2014) to Revision C
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Changed Applications listed in the Applications Section ........................................................................ 2
Deleted the nominal storage temperature value of 27°C ...................................................................... 29
Changed the Handling Ratings to ESD Ratings and moved Tstg into the Absolute Maximum Ratings table .......... 29
Added clarification notes on output capacitance and ESR for VDD6 in the ELECTRICAL CHARACTERISTICS
table ................................................................................................................................... 32
Added the Typical Characteristics section ....................................................................................... 38
Added clarification of ESR needed on VDD6 output capacitance in the Functional Block Diagram ..................... 39
Added clarification on effective output capacitance and ESR in theVDD6 Buck Switch Mode Power Supply
section ............................................................................................................................... 40
Added clarification on the IGN and CANWU pins with respect to transients Wake-Up section .......................... 44
Added start-up delay to VCP in the Power-Up and Power-Down Behavior ................................................. 45
Added SPI Interface Note on use of the SPI while DIAG_OUT MUX is enabled in the Diagnostic Output Pin
DIAG_OUT section .................................................................................................................. 56
Added clarification on the watchdog fail counter and reset event requirements in the WDT Fail Counter, WDT
Status, and WDT Fail Event section .............................................................................................. 61
Changed the RT bits from 4:0 to 6:0 in the TWCW calculation in the WDTI Configuration With an External Trigger
Input (Default Mode) section ....................................................................................................... 64
Deleted the RT bits from 4:0 to 6:0 in the TWCW calculation in the Watchdog Token-Response Sequence Run
section and changed the second calculation from TWOW to TWCW ............................................................ 68
Changed WDT_ANSW_CNT answer order in Set of 4-Bit WD Token Values and Corresponding 8-Bit
Responses table. ................................................................................................................... 73
Changed 4-bit watchdog answer conter to 2-bit watchdog answer counter (WDT_ANSW_CNT) in Watchdog
Token-Response Sequence Run and WDT_STATUS Register Updates section . ........................................ 73
Deleted logic BIST activated by MCU in SAFE state in the MCU Error Signal Monitor (MCU ESM) .................... 76
Deleted permanently text for the CRC check in the Device Configuration Register Protection section ................ 81
Changed CRC check to return to step one for continuous check in the Device Configuration Register Protection
section ................................................................................................................................ 83
Added clarification on the watchdog fail counter and reset event requirement in the Reset and Enable Circuit
image ................................................................................................................................. 84
Added or POST_RUN_RST = 1 & IGN_PWRL = 1 & re-cranking on IGN toGlobal RESET Conditions text
bubble of the Device Controller State Diagram image ........................................................................ 86
Added clarification on watchdog fail counter text to the watchdog reset sub-bullet in the RESET STATE list ......... 87
Changed status bit STAT[1] function in Device Status Flag Byte Response table ......................................... 93
Changed data for SW_LOCK and SW_UNLOCK commands, which were reversed in the SPI Command Table ..... 95
Added clarification for watchdog failure in the SAFETY_STAT_2 Register table ......................................... 103
Revision History
Copyright © 2012–2017, Texas Instruments Incorporated
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Added clarification for watchdog failure in the SAFETY_STAT_4 Register table .........................................
Added ERROR/WDI text to D[5] cleared to description in the SAFETY_ERR_STAT Register table ..................
Added watchdog fail counter text to D[4] cleared to description in the SAFETY_ERR_STAT Register table ........
Changed the calculation in the WDT_WIN1_CFG Register table ..........................................................
Changed the calculation in the WDT_WIN2_CFG Register table ..........................................................
Added the Typical Application section ..........................................................................................
Clarified ESR needed on VDD6 output capacitance in the Typical Application Diagram ................................
Added the System Examples section ...........................................................................................
Added the Layout section .........................................................................................................
Changes from Revision A (December 2013) to Revision B
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Deleted the phrase safety critical from the document. .......................................................................... 1
Added device name to document title.............................................................................................. 1
Added the following to the document: Device Information table, Power Supply Recommendations section,
Layout section,Device and Documentation Support, and Mechanical, Packaging, and Orderable Information
section ................................................................................................................................. 2
Changed the pin type for the VDD3/5 pin from I to PWR ...................................................................... 28
Changed the max value for the Charge-pump voltages from 50 to 52 V in the ABSOLUTE MAXIMUM RATINGS
table ................................................................................................................................... 29
Added the Handling Ratings table, which now contains the storage temperature and ESD ratings .................... 29
Added added with respect to the GND pin to the condition statement in the RECOMMENDED OPERATING
CONDITIONS ........................................................................................................................ 30
Moved operating ambient temperature range from the Absolute Maximum Ratings table to the Recommended
Operating Conditions table ......................................................................................................... 30
Changed changed no undervoltage to no NRES event and added VSOUT to the input supply voltage range on
VBATP specification in the Recommended Operating Conditions ........................................................... 30
Deleted Thermal Information table notes: all of these notes are included in the IC Package Thermal Metrics
application report that is listed in the new table note. .......................................................................... 31
Added the power dissipation image and notes after the Thermal Information table ....................................... 31
Changed condition statement for the ELECTRICAL CHARACTERISTICS table by removing 125°C from the TA
temperature range and changingTJ to the maximum operating junction temperature. Removed VBATP range
and added reference to R1.2 ...................................................................................................... 32
Deleted letter A from beginning of POS number in the VDD6-BUCK With Internal FET and VDD1 – LDO With
External FET sections of the Electrical Characteristics and Timing Requirements table ................................. 32
Changed the parameter name of IVDD6 from output voltage to output current in the Electrical Characteristics table .. 32
Added the test condition to the dVDD5/dt parameter in the ELECTRICAL CHARACTERISTICS table................. 32
Changed the typ value from 3.35 to 3.3 and 5 for the VDD3/5 output voltage parameter in the ELECTRICAL
CHARACTERISTICS table ......................................................................................................... 33
Changed the unit from † to V for the 3.3, VDD3/5 output voltage dynamic parameter in the Electrical
Characteristics table ................................................................................................................ 33
Changed the parameter of 3.8 in the Electrical Characteristics table from VDD5 to VDD6 ............................... 33
Changed the parameter of A4.11 in the Electrical Characteristics table from VBATP to VDD6 .......................... 33
Changed MVVSOUT1 min and max values from –35 and 35 to –25 and 25 in the Electrical Characteristics table... 34
Changed the max value for temperature range listed in the VdrS1 parameter test condition from 165 to 150 in
the Electrical Characteristics table ............................................................................................... 34
Changed the MIN and MAX values of the LdRegVSOUT1 parameter from –25 and 25 to –35 and 35 in the
Electrical Characteristics table .................................................................................................... 34
Changed the typical value for the VDD3/5_OV 5-V hysteresis setting from 400 to 140 in the Electrical
Characteristics table ................................................................................................................ 35
Added DC condition note to the VSOUT1_UV and VSOUT1_OV parameters in the Electrical Characteristics
table .................................................................................................................................. 35
Changed max value for the Rdson_ENDRV_NRES (9.2a) parameter from 86 to 40 in the Electrical characteristics table .. 36
Deleted note reference for the RRSTEXT parameter (9.3) in the Electrical Characteristics table ........................... 36
Changed min value from 300 to 350 for the VENDRV_NRES_TH (9.5) parameter in the ELECTRICAL
CHARACTERISTICS table ........................................................................................................ 36
Added note reference and test condition to the VDIGIN_HIGH parameter (10.1) in the ELECTRICAL
CHARACTERISTICS table ........................................................................................................ 36
Moved timing and switching characteristics out of the Electrical Characteristics table and into a Timing
Revision History
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Requirements and Switching Requirements table (respectively). Also moved the capacitance at CSDO note to the
Timing Requirements and Switching Requirements tables ....................................................................
Changed the TYP value to the MAX value of the SPI clock frequency parameter for the VDDIO = 5 V test
condition in the Electrical Characteristics table .................................................................................
Added image reference to timing and switching requirement parameters ..................................................
Changed max value of ttri (13.11) from 25 to 53.3 in the ELECTRICAL CHARACTERISTICS table ....................
Added the Overview section to the Detailed Description section .............................................................
Moved block diagram into the Detailed Description section and updated block colors ....................................
Changed the OV max value for VDD3/5 (3.3 V) from 3.63 to 3.6 in the Voltage Monitoring Overview table ..........
Added nMASK comments to the UV and OV impact on device behavior for VDD1 in the Voltage Monitoring
Overview table .......................................................................................................................
Moved the Internal Error Signals table to after the Voltage Monitoring Overview table in the Detailed Description
section ...............................................................................................................................
Changed the TYP value for the AVDD_UVN signal from 3.81 to 3.6 in the Internal Error Signals table. Also
changed the device state from Not changed for NRES and ENDRV to LOW, and for State to STANDBY ............
Changed the TYP value for the VCP12_UVN signal from 7.32 to 7.43 in the Internal Error Signals table ............
Changed the TYP value for the VCP12_OV signal from 14 to 14.2 in the Internal Error Signals table ................
Changed the typ value for VCP_OV from 20 to 21 in the Internal Error Signals table ....................................
Changed NUV on signal names to UVN throughout ...........................................................................
Changed the MIN value for the LOCLK signal from 0.740.7452 to 0.742 in the Internal Error Signals table ..........
Changed the VBATP_OV MIN and MAX values from 29 to 34.7 and 32 to 36.7 (respectively) in the Internal
Error Signals table ..................................................................................................................
Changed the device state of the VDD3_5_OT bit from STANDBY to include change ....................................
Changed the max values for VDD5_CL and VDD3_5_CL from 600 to 650 in the Internal Error Signals table .......
Added the DVDD_UV signal to the Internal Error Signals table .............................................................
Changed .............................................................................................................................
Deleted Watchdog function configuration from the post-BIST-reset initialization list in the Logic Built-In Self-Test
(LBIST) section ......................................................................................................................
Changed VCP voltage range from 0.8 to 5.5 to 0.6 to 4 ......................................................................
Replaced the VSFB1 sensor-supply feedback voltage row wit the VSOUT1 sensor-supply voltage row in the
Analog MUX Selection Table ......................................................................................................
Changed VSFB1 divide ratio from 4 ± 0.5% to 1 in the Analog MUX Selection table. Also changed the Voltage
Range from 1.226 V to 5 V ±2% to 2.5 V to 5 V ...............................................................................
Changed the Voltage Range / Accuracy value for both MAIN_BG and VMON_BG from 1.226 to 2.5 V in the
Analog MUX Selection table .......................................................................................................
Changed the name bit that must be configured for DIGITAL MUX mode from DIAG_MUX to MUX_CFG in the
Digital MUX (DMUX) section ......................................................................................................
Deleted Bits INT_CON[2:0] in DIAG_CFG_CTRL register must be set to 111 list item from the SDO diagnostic
check sequence in the MUX interconnect check section ......................................................................
Changed the RT bits from 4:0 to 6:0 in the TWCW calculation in the WDTI Configuration With an External Trigger
Input (Default Mode) section .......................................................................................................
Deleted the CLOSE window note from the Possible Cases for Bad Watchdog Event image and updated the image
Added + 1 to the duration time program calculations in the Watchdog Token-Response Sequence Run section
and changed the second calculation from TWOW to TWCW ......................................................................
Changed the filter time for the ERROR/WDI deglitch from 15-s to 15-µs in the MCU Error Signal Monitor (MCU
ESM) section .........................................................................................................................
Changed the low-pulse duration increment from 15-s to 15-µs in the PWM Mode section ...............................
Changed the Reset and Enable Circuit figure to reflect overtemperature behavior. .......................................
Added _UV to the NMASK_VDD1_OV name in the Reset and Enable Circuit image ....................................
Added _UV to the NMASK_VDD1_OV name in DIAGNOSTIC and ACTIVE state text box of the Device
Controller State Diagram image ..................................................................................................
Deleted WDT failure text from the first list item in the SAFE State section .................................................
Moved all of the registers into one Register Map section .....................................................................
Changed D0 from 1 to 0 in the DEV_REV Register table .....................................................................
Changed D1 and D0 from 0 to X in the DEV_STATE Register table ........................................................
Changed the deglitched minimum time from 7.7 to 7.5 for the IGN bit description in the DEV_STATE register ......
Changed D7 from RSV and 1 to VDD_3_5_SEL and X in the DEV_CFG1 Register table ...............................
Changed D6 from nMASK_VDD_UV and 1 to nMASK_VDD_UV_OV and 0 in the DEV_CFG1 Register table .......
Changed the default value of the NMASK_VDD1_UV_OV bit from 1 to 0 and the VDD1 bit value from 0 to 1 in
the DEV_CFG1 Register ...........................................................................................................
Revision History
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SLVSBC4G – MAY 2012 – REVISED JUNE 2017
Changed bit D5 name from MASK_VBAT_OV to MASK_VBATP_OV in the DEV_CFG2 Register table .............. 99
Changed the D[7] description when EN_VDD3/5_OT is set to '0' by removing the SAFETY_STAT_REG1, VDD6
and re-enable text in the DEV_CFG2 Register table. Also changed from when set to '0' to when set to '1' ........... 99
Changed VDD6, clearing, and re-enabling text from the D[7] description when EN_VDD3/5_OT is set to '1' and
changed to when set to ''' in the DEV_CFG2 Register table .................................................................. 99
Changed D[3:0] description in the DEV_CFG2 Register table from bits are not read/writable to bits are
read/writable ......................................................................................................................... 99
Deleted after SPI read access from the clear to 0 description of each bit in the VMON_STAT_1 Register........... 100
Deleted after SPI read access from the clear to 0 description of each bit in the VMON_STAT_2 Register........... 101
Deleted after SPI read access from the clear to 0 description of each bit in the SAFETY_STAT_1 Register ........ 102
Deleted after SPI read access from the clear to 0 description of each bit in the SAFETY_STAT_2 Register ........ 103
Added description to bit D[4] when set to one 1 when the device is the DIAGNOSTIC state .......................... 103
Changed the name of bit D5 in the SAFETY_STAT_3 register from NRES_IN to NRES_ERR ........................ 104
Changed the D[5] NRES_IN, Reset input status, register description to NRES_ERR, Reset input error and
change first description for setting this bit to 1 ................................................................................. 104
Updated cleared to 0 description of the LBIST_ERR bit in the SAFETY_STAT_3 register ............................. 104
Added DIAGNOSTIC state description for setting bit D[3] and D[2] to 1 .................................................. 104
Changed SPI read access to internal NPOR from the LOCLK bit description in the SAFETY_STAT_4 Register ... 105
Changed bit D7 and bit D6 from 1 to 0 in the SAFETY_ERR_CFG Register table ....................................... 106
Changed the SAFETY_STAT4 register bit from D4 to D5 in the ABIST_EN[1:0] descriptions in the
SAFETY_BIST_CTRL Register table .......................................................................................... 107
Changed names of protected registers in the CRG_CRC_EN bit description in the SAFETY_CHECK_CTRL
Register ............................................................................................................................. 108
Changed monitored to not monitored in the NO_ERROR bit description for setting this bit to 1 in the
SAFETY_CHECK_CTRL Register .............................................................................................. 108
Changed CTRL to CFG in the read and write commands of the SAFETY_FUNC_CFG Register ..................... 109
Changed D7 from 0 to 1 in the SAFETY_FUNC_CFG Register table ...................................................... 109
Changed D4 from 1 to 0 in the SAFETY_FUNC_CFG Register table ...................................................... 109
Changed D0 from 0 to X in the SAFETY_FUNC_CFG Register table ..................................................... 109
Updated the WD_RST_EN bit description for setting this bit to 0 in the SAFETY_FUNC_CFG Register ............ 109
Changed 15 seconds to 15 µs in the SAFETY_ERR_PWM_H Register table description .............................. 110
Changed the time reference amount from 15 s to 15 µs in the PWML[7:0] bit description for when ERR_CFG is
set to 0 in the SAFETY_ERR_PWM_L Register .............................................................................. 111
Changed 5 seconds to 5 µs in the SAFETY_ERR_PWM_H Register table description ................................. 111
Deleted Note: With configuration 001 setting for INT_CON[2:0] bits text from the SPI_SDO description in the
DIAG_CFG_CTRL Register. Also changed the 111 description of the INT_CON[2:0}] from controlling the state of
the SPI_SDO output buffer to Not applicable .................................................................................. 112
Included bit 2 to all WDT_FAIL_CNT bit references ......................................................................... 114
Changed command for the WDT_ANSWER Register from Read to Write ................................................ 115
Changed the default setting of VSOUT1_EN from 1 to in the SENS_CTRL Register tabel ............................. 115
Changed Moved the Application Information section into the Application and Implementation section and added
product folder references ......................................................................................................... 117
Changes from Original (May 2012) to Revision A
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Changed current limit for 6-V pre-regulator from 1.5 A to 1.3 A in the FEATURES list .....................................
Added current limit to the 5-V (CAN) bullet in the FEATURES list ............................................................
Added current limit to the 3.3-V or 5-V MCU I/O Voltage bullet in the FEATURES list ....................................
Deleted reverse battery protection bullet from the FEATURES list ............................................................
Changed current limit from 300 mA to 100 mA in the sensor supply bullet in the FEATURES list .......................
Deleted wake-up and enable circuit bullets from the FEATURES list .........................................................
Added Independent to voltage monitoring bullet in the FEATURES list .......................................................
Added Independent Bandgap Reference bullet to the FEATURES list ........................................................
Added Diagnostic Output Pin bullet to the FEATURES list .....................................................................
Added Safing-Pin and IGNITION Pin bullets to the FEATURES list ...........................................................
Changed document status from Product Preview to Production Data .........................................................
Added CAN Transceiver sentence to the second paragraph in the DESCRIPTION ........................................
Changed adjustable core voltage range from 0.8 and 2.6 V to 0.8 and 3.3 V in the DESCRIPTION .....................
Added diagnostic output pin and enable output to the list of features listed in the eighth paragraph in the
Revision History
Copyright © 2012–2017, Texas Instruments Incorporated
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Product Folder Links: TPS65381-Q1
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TPS65381-Q1
SLVSBC4G – MAY 2012 – REVISED JUNE 2017
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DESCRIPTION ........................................................................................................................ 2
Changed to data manual template to include table of contents and section numbers ...................................... 2
Added ADC, VDD6, to Typical Application Diagram ............................................................................. 3
Changed PGND type from input to ground in PIN FUNCTIONS table ....................................................... 27
Changed POS numbers in ABSOLUTE MAXIMUM RATINGS table for adjustments ..................................... 29
Changed POS numbers in ABSOLUTE MAXIMUM RATINGS table for adjustments ..................................... 29
Added Charge-pump overdrive voltage to the ABSOLUTE MAXIMUM RATINGS table .................................. 29
Deleted DMUXO from Logic I/O voltage list (M1.15) in the ABSOLUTE MAXIMUM RATINGS table ................... 29
Deleted TJ min value of –40 from ABSOLUTE MAXIMUM RATINGS table ................................................ 29
Changed unit for CDM on corner pins (750) from kV to V in the ABSOLUTE MAXIMUM RATINGS table ............. 29
Deleted TJ min value of –40 from ABSOLUTE MAXIMUM RATINGS table ................................................ 30
Deleted VDDIO internal pullup diode note from the RECOMMENDED OPERATING CONDITIONS table............. 30
Added values to the current consumption parameter in the RECOMMENDED OPERATING CONDITIONS table ... 30
Changed condition statement for the ELECTRICAL CHARACTERISTICS table by adding TA over junction
temperature with up to 150°C ..................................................................................................... 32
Added VDD6ripple parameter to the ELECTRICAL CHARACTERISTICS table ............................................. 32
Added VDD6 output voltage to IVDD6 parameter (A1.2) in the ELECTRICAL CHARACTERISTICS table .............. 32
Changed example to Vdropout6 (A1.3) test condition in the ELECTRICAL CHARACTERISTICS table ................... 32
Changed IVDD6_limit parameter description from current-limit to peak current in the ELECTRICAL
CHARACTERISTICS table ......................................................................................................... 32
Changed A1.5 from Fsw_VDD6, switching frequency to ƒclk_VDD6, clock frequency, added note, and deleted test
condition from the ELECTRICAL CHARACTERISTICS table. Also added test condition ................................. 32
Changed test condition for DCVDD6 parameter (A1.6) from VBATP > 7 V to 0 main band gap .......................................... 100
Changed name of D6 from VDD3_ILIM to VDD3_5_ILIM in the SAFETY_STAT_1 Register table .................... 102
Added note to D[7] description in the SAFETY_STAT_1 Register table ................................................... 102
Added EEPROM bullet to D[5] description in the SAFETY_STAT_2 Register table ..................................... 103
Added DIAGNOSTIC and ACTIVE State text to D[2:0] default bullet in the SAFETY_STAT_2 Register table ....... 103
Added cleared to text to the D[5] description in the SAFETY_STAT_3 Register table ................................... 104
Changed D7 and D6 from 1 to 0 in the SAFETY_STAT_4 Register table ................................................. 105
Changed name of D0 from TRIM_ERR to TRIM_ERR_VMON in the SAFETY_STAT_4 Register table .............. 105
Added cleared to bullet and note to D[7:6] description in the SAFETY_STAT_4 Register table........................ 105
Changed set to text to include error-signal monitoring in the D[3] description in the SAFETY_STAT_4 Register
table ................................................................................................................................. 105
Added ERROR_PIN_FAIL text to D[3] cleared description in the SAFETY_STAT_4 Register table................... 105
Added Watchdog Fail Counter text to the D[2] set to and cleared to descriptions in the SAFETY_STAT_4
Register table....................................................................................................................... 105
Deleted SPI read access from D[1]cleared to description in the SAFETY_STAT_4 Register table ................... 105
Changed SPI read access to NPOR in the D[0]cleared to description in the SAFETY_STAT_4 Register table ..... 105
Changed D4 from 1 to 0 and D1 and D0 from 0 to 1 in the SAFETY_STAT_5 Register table ......................... 106
Changed threshold from max to min for the 0000 setting description in the SAFETY_ERR_CFG Register table ... 106
Changed D7 and D6 from 1 to 0 in the SAFETY_BIST_CTRL Register table ............................................ 107
Changed D3 from LOCLK_EN to RSV in the SAFETY_BIST_CTRL Register table ..................................... 107
Added ACTIVE state bullet to D[7:6] description in the SAFETY_BIST_CTRL Register table .......................... 107
Added DIAGNOSTIC and ACTIVE states to D[5] description in the SAFETY_BIST_CTRL Register table ........... 107
Revision History
Copyright © 2012–2017, Texas Instruments Incorporated
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Product Folder Links: TPS65381-Q1
Not Recommended for New Designs
TPS65381-Q1
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SLVSBC4G – MAY 2012 – REVISED JUNE 2017
Changed D4 from NO_WRST to RSV in the SAFETY_CHECK_CTRL Register table ..................................
Added DEV_CFG2 and DEV_CFG1 to D[7] list of protected registers in the SAFETY_CHECK_CTRL Register
table .................................................................................................................................
Added device state, ENDRV and NRES to D[6] description in the SAFETY_CHECK_CTRL Register table .........
Changed D[3] from not read/writable to read/writable in the SAFETY_CHECK_CTRL Register table ................
Added ERROR_PIN_FAIL sub-bullet to D[2] descriptionin the SAFETY_CHECK_CTRL Register table .............
Changed D7 from 0 to 1 in the SAFETY_FUNC_CFG Register table ......................................................
Changed D2 from RSV to DIS_NRES_MON in the SAFETY_FUNC_CFG Register table ..............................
Changed D0 from 0 to X in the SAFETY_FUNC_CFG Register table .....................................................
Added SAFE state-time sub-bullet to the D[7] description in the SAFETY_FUNC_CFG Register table ...............
Changed D[6] description from error-pin to Error-Signal Monitor in the SAFETY_FUNC_CFG Register table .......
Deleted watchdog pin from the D[6] description in the SAFETY_FUNC_CFG Register table ..........................
Added note text to the D[4] description in the SAFETY_FUNC_CFG Register table.....................................
Added STANDBY state text to the D[4] description in the SAFETY_FUNC_CFG Register table ......................
Deleted enabling/disabling the watchdog bullet from the D[3] description in the SAFETY_FUNC_CFG Register
table .................................................................................................................................
Added bullets to the D[2] description in the SAFETY_FUNC_CFG Register table .......................................
Changed D[1] from not read/writable to read/writable in the SAFETY_FUNC_CFG Register table ....................
Added READ-ONLY bullet, RESET STATE sub-bullet, and connected and not-connected text to the D[0]
description in the SAFETY_FUNC_CFG Register table ......................................................................
Added ERROR/WDI and SAFE state text to the D[5] set to description in the SAFETY_ERR_STAT Register
table .................................................................................................................................
Added WD_RST_EN text to D[4] set to description in the SAFETY_ERR_STAT Register table .......................
Added watchdog fail counter text to D[4] cleared to description in the SAFETY_ERR_STAT Register table .........
Added equation and oscillator text to the SAFETY_ERR_PWM_H Register table description .........................
Changed D4, D2, and D0 from 0 to 1 in the SAFETY_ERR_PWM_L Register description .............................
Added equations and oscillator text to the SAFETY_ERR_PWM_H Register table description ........................
Changed D4 from 1 to 0 in theSAFETY_PWD_THR_CFG Register table .................................................
Changed _THR to PWD names for D3:D0 in theSAFETY_PWD_THR_CFG Register table ...........................
Changed D7, D5, and D3 from 1 to 0 in the SAFETY_CFG_CRC Register table ........................................
Changed D4 from 0 to 1 in the SAFETY_CFG_CRC Register table .......................................................
Changed D[7] description from high-impedance to tri-stated in the DIAG_CFG_CTRL Register table ................
Added SDO diagnostics from D[1:0] description to the D[6] description in the DIAG_CFG_CTRL Register table ...
Changed D2 from 1 to 0 in the WDT_TOKEN_FDBCK Register table ....................................................
Added bullets to the D[7:4] description in the WDT_TOKEN_FDBCK Register table ...................................
Added new TOKEN seed bullet and sub-bullets to the D[3:0] description in the WDT_TOKEN_FDBCK Register
table .................................................................................................................................
Changed D6:D0 from 0 to 1 in the WDT_WIN1_CFG Register table ......................................................
Changed D4:D3 from 0 to 1 in the WDT_WIN2_CFG Register table .......................................................
Changed D7 from 0 to 1 in the WDT_TOKEN_VALUE Register table .....................................................
Changed MCU sub-bullet from D[7] description to replace Q&A sub-bullet in the D[3:0] description of the
WDT_TOKEN_VALUE Register table ..........................................................................................
Changed D7:D6 from 0 to 1 in the WDT_STATUS Register table ..........................................................
Changed D7:DF from RSV to WD_WRONG_CFG in the WDT_STATUS Register table ...............................
Changed set to text of the D[5] description in the WDT_STATUS Register table ........................................
Changed D[4] note from recommendation to clear bit to remains set to 1 in the SENS_CTRL Register table ......
Changed Typical Application Diagram image ..................................................................................
Revision History
Copyright © 2012–2017, Texas Instruments Incorporated
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SLVSBC4G – MAY 2012 – REVISED JUNE 2017
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Changes from Original (July 2016) to Revision A
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Changed current limit for 6-V pre-regulator from 1.5 A to 1.3 A in the FEATURES list ..................................... 1
Added current limit to the 5-V (CAN) bullet in the FEATURES list ............................................................ 1
Added current limit to the 3.3-V or 5-V MCU I/O Voltage bullet in the FEATURES list .................................... 1
Deleted reverse battery protection bullet from the FEATURES list ............................................................ 1
Changed current limit from 300 mA to 100 mA in the sensor supply bullet in the FEATURES list ....................... 1
Deleted wake-up and enable circuit bullets from the FEATURES list ......................................................... 1
Added Independent to voltage monitoring bullet in the FEATURES list ....................................................... 1
Added Independent Bandgap Reference bullet to the FEATURES list ........................................................ 1
Added Diagnostic Output Pin bullet to the FEATURES list ..................................................................... 1
Added Safing-Pin and IGNITION Pin bullets to the FEATURES list ........................................................... 1
Changed document status from Product Preview to Production Data ......................................................... 1
Added CAN Transceiver sentence to the second paragraph in the DESCRIPTION ........................................ 2
Changed adjustable core voltage range from 0.8 and 2.6 V to 0.8 and 3.3 V in the DESCRIPTION ..................... 2
Added diagnostic output pin and enable output to the list of features listed in the eighth paragraph in the
DESCRIPTION ........................................................................................................................ 2
Changed to data manual template to include table of contents and section numbers ...................................... 2
Added ADC, VDD6, to Typical Application Diagram ............................................................................. 3
Changed PGND type from input to ground in PIN FUNCTIONS table ....................................................... 27
Changed POS numbers in ABSOLUTE MAXIMUM RATINGS table for adjustments ..................................... 29
Changed POS numbers in ABSOLUTE MAXIMUM RATINGS table for adjustments ..................................... 29
Added Charge-pump overdrive voltage to the ABSOLUTE MAXIMUM RATINGS table .................................. 29
Deleted DMUXO from Logic I/O voltage list (M1.15) in the ABSOLUTE MAXIMUM RATINGS table ................... 29
Deleted TJ min value of –40 from ABSOLUTE MAXIMUM RATINGS table ................................................ 29
Changed unit for CDM on corner pins (750) from kV to V in the ABSOLUTE MAXIMUM RATINGS table ............. 29
Deleted TJ min value of –40 from ABSOLUTE MAXIMUM RATINGS table ................................................ 30
Deleted VDDIO internal pullup diode note from the RECOMMENDED OPERATING CONDITIONS table............. 30
Added values to the current consumption parameter in the RECOMMENDED OPERATING CONDITIONS table ... 30
Changed condition statement for the ELECTRICAL CHARACTERISTICS table by adding TA over junction
temperature with up to 150°C ..................................................................................................... 32
Added VDD6ripple parameter to the ELECTRICAL CHARACTERISTICS table ............................................. 32
Added VDD6 output voltage to IVDD6 parameter (A1.2) in the ELECTRICAL CHARACTERISTICS table .............. 32
Changed example to Vdropout6 (A1.3) test condition in the ELECTRICAL CHARACTERISTICS table ................... 32
Changed IVDD6_limit parameter description from current-limit to peak current in the ELECTRICAL
CHARACTERISTICS table ......................................................................................................... 32
Changed A1.5 from Fsw_VDD6, switching frequency to ƒclk_VDD6, clock frequency, added note, and deleted test
condition from the ELECTRICAL CHARACTERISTICS table. Also added test condition ................................. 32
Changed test condition for DCVDD6 parameter (A1.6) from VBATP > 7 V to 0 main band gap .......................................... 100
Changed name of D6 from VDD3_ILIM to VDD3_5_ILIM in the SAFETY_STAT_1 Register table .................... 102
Added note to D[7] description in the SAFETY_STAT_1 Register table ................................................... 102
Added EEPROM bullet to D[5] description in the SAFETY_STAT_2 Register table ..................................... 103
Added DIAGNOSTIC and ACTIVE State text to D[2:0] default bullet in the SAFETY_STAT_2 Register table ....... 103
Added cleared to text to the D[5] description in the SAFETY_STAT_3 Register table ................................... 104
Revision History
Copyright © 2012–2017, Texas Instruments Incorporated
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Product Folder Links: TPS65381-Q1
Not Recommended for New Designs
TPS65381-Q1
www.ti.com
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SLVSBC4G – MAY 2012 – REVISED JUNE 2017
Changed D7 and D6 from 1 to 0 in the SAFETY_STAT_4 Register table .................................................
Changed name of D0 from TRIM_ERR to TRIM_ERR_VMON in the SAFETY_STAT_4 Register table ..............
Added cleared to bullet and note to D[7:6] description in the SAFETY_STAT_4 Register table........................
Changed set to text to include error-signal monitoring in the D[3] description in the SAFETY_STAT_4 Register
table .................................................................................................................................
Added ERROR_PIN_FAIL text to D[3] cleared description in the SAFETY_STAT_4 Register table...................
Added Watchdog Fail Counter text to the D[2] set to and cleared to descriptions in the SAFETY_STAT_4
Register table.......................................................................................................................
Deleted SPI read access from D[1]cleared to description in the SAFETY_STAT_4 Register table ...................
Changed SPI read access to NPOR in the D[0]cleared to description in the SAFETY_STAT_4 Register table .....
Changed D4 from 1 to 0 and D1 and D0 from 0 to 1 in the SAFETY_STAT_5 Register table .........................
Changed threshold from max to min for the 0000 setting description in the SAFETY_ERR_CFG Register table ...
Changed D7 and D6 from 1 to 0 in the SAFETY_BIST_CTRL Register table ............................................
Changed D3 from LOCLK_EN to RSV in the SAFETY_BIST_CTRL Register table .....................................
Added ACTIVE state bullet to D[7:6] description in the SAFETY_BIST_CTRL Register table ..........................
Added DIAGNOSTIC and ACTIVE states to D[5] description in the SAFETY_BIST_CTRL Register table ...........
Changed D4 from NO_WRST to RSV in the SAFETY_CHECK_CTRL Register table ..................................
Added DEV_CFG2 and DEV_CFG1 to D[7] list of protected registers in the SAFETY_CHECK_CTRL Register
table .................................................................................................................................
Added device state, ENDRV and NRES to D[6] description in the SAFETY_CHECK_CTRL Register table .........
Changed D[3] from not read/writable to read/writable in the SAFETY_CHECK_CTRL Register table ................
Added ERROR_PIN_FAIL sub-bullet to D[2] descriptionin the SAFETY_CHECK_CTRL Register table .............
Changed D7 from 0 to 1 in the SAFETY_FUNC_CFG Register table ......................................................
Changed D2 from RSV to DIS_NRES_MON in the SAFETY_FUNC_CFG Register table ..............................
Changed D0 from 0 to X in the SAFETY_FUNC_CFG Register table .....................................................
Added SAFE state-time sub-bullet to the D[7] description in the SAFETY_FUNC_CFG Register table ...............
Changed D[6] description from error-pin to Error-Signal Monitor in the SAFETY_FUNC_CFG Register table .......
Deleted watchdog pin from the D[6] description in the SAFETY_FUNC_CFG Register table ..........................
Added note text to the D[4] description in the SAFETY_FUNC_CFG Register table.....................................
Added STANDBY state text to the D[4] description in the SAFETY_FUNC_CFG Register table ......................
Deleted enabling/disabling the watchdog bullet from the D[3] description in the SAFETY_FUNC_CFG Register
table .................................................................................................................................
Added bullets to the D[2] description in the SAFETY_FUNC_CFG Register table .......................................
Changed D[1] from not read/writable to read/writable in the SAFETY_FUNC_CFG Register table ....................
Added READ-ONLY bullet, RESET STATE sub-bullet, and connected and not-connected text to the D[0]
description in the SAFETY_FUNC_CFG Register table ......................................................................
Added ERROR/WDI and SAFE state text to the D[5] set to description in the SAFETY_ERR_STAT Register
table .................................................................................................................................
Added WD_RST_EN text to D[4] set to description in the SAFETY_ERR_STAT Register table .......................
Added watchdog fail counter text to D[4] cleared to description in the SAFETY_ERR_STAT Register table .........
Added equation and oscillator text to the SAFETY_ERR_PWM_H Register table description .........................
Changed D4, D2, and D0 from 0 to 1 in the SAFETY_ERR_PWM_L Register description .............................
Added equations and oscillator text to the SAFETY_ERR_PWM_H Register table description ........................
Changed D4 from 1 to 0 in theSAFETY_PWD_THR_CFG Register table .................................................
Changed _THR to PWD names for D3:D0 in theSAFETY_PWD_THR_CFG Register table ...........................
Changed D7, D5, and D3 from 1 to 0 in the SAFETY_CFG_CRC Register table ........................................
Changed D4 from 0 to 1 in the SAFETY_CFG_CRC Register table .......................................................
Changed D[7] description from high-impedance to tri-stated in the DIAG_CFG_CTRL Register table ................
Added SDO diagnostics from D[1:0] description to the D[6] description in the DIAG_CFG_CTRL Register table ...
Changed D2 from 1 to 0 in the WDT_TOKEN_FDBCK Register table ....................................................
Added bullets to the D[7:4] description in the WDT_TOKEN_FDBCK Register table ...................................
Added new TOKEN seed bullet and sub-bullets to the D[3:0] description in the WDT_TOKEN_FDBCK Register
table .................................................................................................................................
Changed D6:D0 from 0 to 1 in the WDT_WIN1_CFG Register table ......................................................
Changed D4:D3 from 0 to 1 in the WDT_WIN2_CFG Register table .......................................................
Changed D7 from 0 to 1 in the WDT_TOKEN_VALUE Register table .....................................................
Changed MCU sub-bullet from D[7] description to replace Q&A sub-bullet in the D[3:0] description of the
WDT_TOKEN_VALUE Register table ..........................................................................................
Changed D7:D6 from 0 to 1 in the WDT_STATUS Register table ..........................................................
Changed D7:DF from RSV to WD_WRONG_CFG in the WDT_STATUS Register table ...............................
Revision History
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105
105
105
105
105
105
105
105
106
106
107
107
107
107
108
108
108
108
108
109
109
109
109
109
109
109
109
109
109
109
109
110
110
110
110
111
111
111
111
111
111
112
112
113
113
113
113
113
114
114
114
114
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•
•
•
26
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Changed set to text of the D[5] description in the WDT_STATUS Register table ........................................ 114
Changed D[4] note from recommendation to clear bit to remains set to 1 in the SENS_CTRL Register table ...... 115
Changed Typical Application Diagram image .................................................................................. 117
Revision History
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SLVSBC4G – MAY 2012 – REVISED JUNE 2017
3 Pin Configuration and Functions
The pin configuration drawing in this section is not to scale. For package dimensions, see the mechanical
data in Section 10.
DAP Package
32-Pin HTSSOP With PowerPAD™
Top View
VBAT_SAFING
1
32
ENDRV
VCP
2
31
SEL_VDD3/5
CP1
3
30
IGN
CP2
4
29
VBATP
PGND
5
28
SDN6
NRES
6
27
VDD6
DIAG_OUT
7
26
VDD1_G
NCS
8
25
PGND
24
VDD1_SENSE
Thermal
SDI
9
SDO
10
23
GND
SCLK
11
22
VDDIO
RSTEXT
12
21
VDD3/5
ERROR/WDI
13
20
VDD5
CANWU
14
19
GND
VSFB1
15
18
VTRACK1
VSIN
16
17
VSOUT1
Pad
Pin Functions
PIN
NO.
NAME
TYPE
DESCRIPTION
1
VBAT_SAFING
PWR
Battery (supply) input for monitoring (VMON) and BG2 functions (must be reverse protected),
should be connected to VBATP
2
VCP
PWR
Charge-pump output voltage
3
CP1
PWR
Charge-pump external capacitor, high-voltage side
4
CP2
PWR
Charge-pump external capacitor, low-voltage side
5
PGND
GND
Ground (power)
6
NRES
O
Cold reset output signal for the microcontroller (MCU) (active-low, internal pullup, open drain
output)
7
DIAG_OUT
O
Diagnostic output pin for diagnostic MUX. Internal analog (AMUX) and digital (DMUX) signal
connection to MCU ADC and digital IO
8
NCS
I
SPI chip select (active-low, internal pullup)
9
SDI
I
SPI serial data IN (internal pulldown)
10
SDO
O
SPI serial data OUT
11
SCLK
I
SPI clock (internal pull down)
12
RSTEXT
I
Configuration pin to set reset extension time through a resistor to GND
Pin Configuration and Functions
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Pin Functions (continued)
PIN
NO.
NAME
TYPE
DESCRIPTION
13
ERROR/WDI
I
Error input signal from the MCU while using the MCU ESM (with the watchdog in Q&A
Mode), trigger input for the watchdog in trigger mode (MCU ESM not used). This pin is edge
triggered.
14
CANWU
I
Wake-up input from CAN transceiver, other transceiver or other source. Wake-up request
latched with CANWU_L. (internal pulldown)
15
VSFB1
I
Feedback input reference for sensor supply regulator (VSOUT1)
16
VSIN
PWR
Input supply voltage for the sensor-supply regulator (VSOUT1)
17
VSOUT1
PWR
Output voltage for the VSOUT1 sensor-supply regulator
18
VTRACK1
I
19
GND
GND
Ground (analog)
Tracking input reference for sensor-supply regulator (VSOUT1) (internal pulldown)
23
GND
GND
Ground (analog)
20
VDD5
PWR
VDD5 regulator output voltage
21
VDD3/5
PWR
VDD3/5 regulator output voltage
22
VDDIO
PWR
I/O supply input for pins to and from the MCU
24
VDD1_SENSE
I
25
PGND
GND
26
VDD1_G
O
27
VDD6
PWR
VDD6 switch mode regulator feedback input and supply input for integrated VDD5 and
VDD3/5 regulators
28
SDN6
PWR
Switching node for VDD6 switch mode regulator
29
VBATP
PWR
Battery (supply) voltage (must be reverse protected), main power supply input for device
30
IGN
I
Wake-up input from ignition (key) or other source (internal pulldown)
31
SEL_VDD3/5
I
Input selects voltage level for VDD3/5 regulator (SEL_VDD3/5 pin open: 3.3-V regulation
from VDD3/5; SEL_VDD3/5 pin to GND: 5-V regulation from VDD3/5)
32
ENDRV
O
Enable output signal for peripherals (for example, motor-driver IC), safing path output
(internal pullup, open drain output)
—
Thermal pad
—
Place thermal vias to large ground plane and connect to GND and PGND pins.
28
Reference input for VDD1 regulator (feedback) and input for UV/OV monitoring of VDD1
regulator
Ground (power)
Gate drive of external FET for VDD1 regulator
Pin Configuration and Functions
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4 Specifications
4.1
Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted) (1) (2)
POS
M1.1
Protected-battery voltage
VBATP, VBAT_SAFING, VSIN
(3)
MIN
MAX
UNIT
–0.3
40
V
–0.3
lesser
of
VBATP
+ 16 or
52
V
M1.2
Charge-pump voltage
VCP, CP1
M1.3
Charge-pump pumping capacitor
voltage
CP2
–0.3
40
V
M1.3a
Charge-pump overdrive voltage
VCP (3)-VBATP
–0.3
16
V
M1.4
VDD6 switching-node voltage
SDN6
–0.3
40
V
M1.5
VDD6 output voltage
VDD6
–0.3
40
V
M1.6
VDD5 output voltage
VDD5
–0.3
7
V
M1.7
VDD3/5 output voltage
VDD3/5
–0.3
7
V
M1.8
VDD1_G voltage
VDD1_G
–0.3
15
V
M1.10
VDD1_SENSE voltage
VDD1_SENSE
–0.3
7
V
M1.11
Sensor supply tracking voltage
VTRACK1
–0.3
40
V
M1.12
Sensor supply output and
feedback voltage
VSOUT1, VSFB1
–2
18
V
M1.14
Analog/digital reference output
voltage
DIAG_OUT
–0.3
7
V
VDDIO, ERROR/WDI, ENDRV, NRES, NCS, SDI, SDO,
SCLK, RSTEXT
–0.3
7
V
SEL_VDD3/5
–0.3
40
V
–7
40
V
–0.3
40
V
150
°C
150
°C
M1.15
Logic I/O voltage
M1.16
M1.17
IGN wakeup
IGN
M1.18
CAN wakeup
CANWU
M1.19
Operating virtual junction temperature, TJ
(4)
Storage temperature, Tstg
–65
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
(3)
All voltage values are with respect to the network ground pin unless otherwise noted.
VCP and CP1 are output pins, no external voltage should be applied to these pins. Absolute Maximum ratings for these pins are what
may appear on the pins.
VSOUT1 is connected to VSFB1 directly (for unity gain) or through resistor divider (tracking mode gain or non-tracking mode output
voltage adjusting). In case of a short to supply fault, the voltage on VSOUT1 is equal to the supply to the device (VBATP,
VBAT_SAFING, and VSIN where VSIN is connected to VBATP as it's supply instead of VDD6) and VSFB1 voltage will follow VSOUT1
based on the use case, directly (for unity gain) or via resistor divider (tracking mode gain or non-tracking mode output voltage adjusting).
(4)
4.2
ESD Ratings
POS.
VALUE
M1.21
Human body model (HBM), per AEC Q100-002 (1)
M1.20
M1.22
M1.23
(1)
V(ESD)
Electrostatic
discharge
Charged device model (CDM), per AEC Q100-011
All pins except VSOUT1 (17) and
VSFB1 (15)
±2000
On sensor supply pins VSOUT1 (17)
and VSFB1 (15)
±4000
Corner pins (1, 16, 17, and 32)
±750
All pins
±500
UNIT
V
AEC Q100-002 indicates that HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 Specification.
Specifications
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Recommended Operating Conditions
Over operating temperature range and with respect to the GND and PGND (GND = PGND) pins (unless otherwise noted)
POS
MIN
MAX
UNIT
–40
125
°C
5.8 (3)
V
5.8
34 (5)
V
R1.3
Input supply voltage on VBATP after initial power up, functional operation during low input supply voltage events, (POS
6.1, VBATP_UVoff): (1) (6)
•
The device remains functional. Some rails can be in dropout or undervoltage depending on actual input supply
and the configuration of the specific regulator.
•
VDD6 is in dropout mode (100% duty cycle).
•
VDD3/5 configured for 5-V output can be in dropout. If the output reaches VDD3/5_UV threshold, the device
transitions to the RESET state because of a VDD3/5 undervoltage event. If VDD3/5 is configured for 3.3-V output
it remains functional.
•
VDD5 can be in dropout. If the output reaches VDD5_UV threshold, the device indicates the undervoltage event
through the VDD5_UV status bit.
•
VSOUT1 may be in dropout depending on configuration, if output reaches VSOUT1_UV threshold the device
indicates the undervoltage event through the VSOUT1_UV status bit.
4.5
5.8
V
R1.4
VDDIO supply-voltage range
3.3
5
V
R1.5
Current consumption in standby mode (all regulator outputs disabled)
IGN = 0 V, CANWU = 0 V, 5.8 V ≤ VBAT ≤ 20 V for TJ < 85°C or 5.8 V ≤ VBAT ≤ 14 V tor TJ = 125°C
75
µA
M1.20a
Operating ambient temperature, TA
R1.1
Minimum input supply voltage on VBATP for initial power up (POS 6.2, VBATP_UVon) (1) (2)
R1.2
Input supply voltage on VBATP (1) (2) (4)
•
To support operation when VBATP is between 5.8 V and 7 V, the device remains functional. Some rails can be in
dropout or undervoltage depending on actual input supply and the configuration of the specific regulator.
•
VDD6 can be in dropout mode (100% duty cycle)
•
VDD3/5 configured for 5-V output can be in dropout. If the output reaches VDD3/5_UV threshold, the device
transitions to the RESET state because of a VDD3/5 undervoltage event. If VDD3/5 is configured for 3.3-V output
it remains functional.
•
VDD5 can be in dropout. If output reaches the VDD5_UV threshold, the device indicates the undervoltage event
through the VDD5_UV status bit.
•
VSOUT1 can be in dropout depending on configuration. If output reaches VSOUT1_UV threshold, the device
indicates the undervoltage event through the VSOUT1_UV status bit.
(1)
(2)
(3)
(4)
VBATP should be connected to VBAT_SAFING.
VBAT_SAFING has a supply high enough to power the VMON block and internal rail AVDD_VMON above AVDD_VMON_UV.
The device may power up when VBATP is less than 5.8 V, but it will always power up when VBATP is 5.8V or greater, while
VBAT_SAFING has a supply high enough to power the VMON block and internal rail AVDD_VMON above AVDD_VMON_UV.
Under slow VBAT ramp-down and when VDD3/5 rail is configured as a 5-V rail, the NRES output can be pulled low when VBAT is at
approximately 6.3 V. This occurs because of an undervoltage transient on the VDD3/5 rail.
Under slow VBAT ramp-up and when VDD3/5 rail is configured as a 5-V rail, the NRES output can be pulled low when VBAT is at
approximately 6.6 V. This occurs because of an undervoltage transient on VDD3/5 rail. Under similar conditions, undervoltage transients
are observed on VDD5 and VSOUT1 rails (refer to Device Behavior Under Slow VBAT Ramp-Up and Ramp-Down).
(5)
The recommended maximum operating voltage for VBATP and VBAT_SAFING is listed as 34 V, just below the overvoltage detection
thresholds for VBATP, VBATP_OVrise and VBATP_OVfall. TI recommends enabling overvoltage detection on VBATP (default is enabled,
MASK_VBATP_OV = 0). TI also recommends evaluating the thermal and power dissipation of the device in the application and ensure
the design has adequate thermal management for operation at the necessary supply voltage level.
(6)
The device will remain on if VBATP drops from 5.8V down to VBATP_UVoff threshold or another voltage monitor detects an
undervotlage on a specific rail and changes the device state. VBAT_UVoff can be detected at 4.5 V but could be detected as low as 4.2
V. VBAT_SAFING has a supply high enough to power the VMON block and internal rail AVDD_VMON above AVDD_VMON_UV.
30
Specifications
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4.4
SLVSBC4G – MAY 2012 – REVISED JUNE 2017
Thermal Information
TPS65381-Q1
THERMAL METRIC (1)
DAP (HTSSOP)
UNIT
32 PINS
RθJA
Junction-to-ambient thermal resistance
26.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
14.1
°C/W
RθJB
Junction-to-board thermal resistance
6
°C/W
ψJT
Junction-to-top characterization parameter
0.2
°C/W
ψJB
Junction-to-board characterization parameter
6.2
°C/W
Junction-to-case (bottom) thermal resistance
0.5
°C/W
RθJC(bot)
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
3
Power Dissipation (W)
2.85
1.9
0.95
25
50
75
100
125
150
Ambient Temperature (°C)
(1)
(2)
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature
may have to be derated. Maximum ambient temperature (TAmax) is dependent on the maximum-operating junction temperature
(TJmax), the maximum power dissipation of the device in the application (PDmax), and the junction-to-ambient thermal resistance of
the part/package in the application (RθJA), as given by the following equation: TAmax = TJmax – (RθJA × PDmax).
Maximum power dissipation is a function of TJmax, RθJA, and TA. The maximum-allowable power dissipation at any allowable
ambient temperature is PD = (TJmax – TA) / RθJA.
Figure 4-1. Derating Profile for Power Dissipation Based on High-K JEDEC PCB
Specifications
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Electrical Characteristics
Over operating ambient temperature TA = –40°C to the maximum-operating junction temperature TJ = 150°C, and with
VBATP = VBAT_SAFING in the recommended operating range (see R1.2 in Section 4.3) (unless otherwise noted)
POS
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VDD6-BUCK WITH INTERNAL FET
AN
CVDD6
Value of output ceramic capacitor (1)
AN
LVDD6
Value of inductor
1.1
VDD6
VDD6 output voltage
Average DC value excluding ripple and load transients, VBAT
> 7 V, 0 < IVDD6 < 1.3 A, including dc line and load regulation,
temperature drift, and long-term drift where VBAT = VBATP =
VBAT_SAFING
1.1a
VDD6ripple
VDD6 ripple voltage
Peak-to-peak, ensured by design
VBATP = VBAT_SAFING = 14 V, L = 33 µH, C = 22 µF
1.2
ESR range 100 mΩ to 300 mΩ (2)
IVDD6
VDD6 output current IVDD5 + IVDD3/5 + IVDD1+ IVSOUT1
1.3
Vdropout6
VDD6 output dropout voltage Vdropout6 = (VBATP –
SDN6)
1.4
IVDD6_limit
Peak current out of SDN6 pin (4)
1.5
ƒclk_VDD6
Clock Frequency
1.6
DCVDD6
ton/tperiod
1.7
TprotVDD6
Temperature protection threshold (7)
22
47
22
33
5.4
6
IVDD6 = 1.3 A
(example: RDS(on) = 0.46 Ω)
1.5
(5)
396
0 < IVDD6 < 1.3 A
VDD6 enters dropout mode (100% duty cycle) for VBATP < 7
V
6.6
200
(3)
440
µF
µH
V
mV
1.3
A
0.6
V
2.5
A
484
kHz
7% (6)
100%
175
210
°C
5
µF
VDD5 – LDO WITH INTERNAL FET
AN
CVDD5
Value of output ceramic capacitor
ESR range 0 mΩ to 100 mΩ
2.1
VDD5
VDD5 output voltage (8)
0 < IVDD5 < 300 mA
2.2
IVDD5
VDD5 output current, including load from the internal
resistor of 660 Ω (typical)
2.3
VDD5dyn
VDD5 output voltage dynamic
Load step 20% to 80% in 5 µs, with CVDD5 = 5 µF
VDD5max
Maximum VDD5 output voltage during VBATP step
from 5.5 V to 13.5 V within 10 μs
2.5
Vdropout5
VDD5 output dropout voltage Vdropout5 = (VDD6 –
VDD5)
2.6
PSRRVDD5
Power supply rejection ratio
50 < f < 20 kHz, VBATP = 10 V, U = 4 Vpp,
CVDD5 = 5 μF, 0 < IVDD5 < 300 mA
2.4
1
4.9
5.1
V
300
mA
5.15
V
CVDD5 = 5 µF, IVDD5 < 300 mA
5.5
V
IVDD5 < 300 mA
0.3
V
4.85
5
5
> 40
dB
2.7
LnRegVDD5
Line regulation (IVDD5 constant)
0 < IVDD5 < 300 mA,
8 V < VBATP < 19 V
2.8
LdRegVDD5
Load regulation (VDD6 constant)
0 < IVDD5 < 300 mA,
8 V < VBATP < 19 V
2.9
TmpCoVDD5
Temperature drift
Normalized to 25°C value
2.11
dVDD5/dt
dV/dt at VDD5 at startup
Between 10% and 90% of VDD5 end-value
5
50
2.13
TprotVDD5
Temperature protection threshold (9)
175
210
°C
2.14
IVDD5_limit
Current-limit (10)
350
650
mA
(1)
(2)
(3)
(4)
–25
25
mV
–25
25
mV
–0.5%
0.5%
V/ms
Capacitance is effective capacitance after derating for operating voltage, temperature, and lifetime.
ESR is total effective series resistance of the capacitors and if necessary added series resistor.
IVDD6 is the load current from VDD5, VDD3/5, VDD1 and VSOUT1 on VDD6 regulator; VDD6 is not recommended to be loaded directly
for applications or peripherals that cannot operate with wider tolerance and ripple since VDD6 is a pre-regulator. However, LDOs or DCDC conv
erters may be connected directly as along as the total load current on VDD6, IVDD6, does not exceed the specification for VDD6 load
current.
VDD6 current limit is based on the peak current through SDN6 switch, it will not directly correspond to an average current limit.
(5)
Actual switching on SND6 depends on whether output voltage on VDD6 is above or below hysteretic PWM comparator threshold at the
moment of the rising edge of the Fclk_VDD6 clock. If no switching is needed when the risking edge of the Fclk_VDD6 clock occurs, SDN6
will not switch on. SDN6 turn off is determined by the hysteretic PWM comparator threshold, when the actual VDD6 voltage is above the
threshold SDN6 will turn off.
(6) When the VDD6 control loop turns the SDN6 switch on at the rising edge of a fclk_VDD6 clock cycle, SDN6 will remain on with a
minimum duty cycle of 7%. However, if the control loop skips a clock cycle the duty cycle will be 0% for that fclk_VDD6 clock cycle.
(7) Protection of VDD6, shared with VDD3/5 overtemperature protection.
(8) VDD5 output regulation includes line and load regulation, temperature drift.
(9) Protection of VDD5. In case of detected overtemperature, only VDD5 will be switched off.
(10) IVDD5_limit current limit has snap back behavior. During a short circuit condition, a transient current higher than the maximum will occur
until the current limit snaps back into the specified range.
32
Specifications
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Electrical Characteristics (continued)
Over operating ambient temperature TA = –40°C to the maximum-operating junction temperature TJ = 150°C, and with
VBATP = VBAT_SAFING in the recommended operating range (see R1.2 in Section 4.3) (unless otherwise noted)
POS
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
3.234
3.3
3.366
4.9
5
5.1
UNIT
VDD3/5 – LDO WITH INTERNAL FET
AN
CVDD3/5
Value of output ceramic capacitor
VDD3/5
VDD3/5 output voltage,
SEL_VDD3/5 pin: open = 3.3 V setting, ground = 5 V
setting
3.1a
3.1b
ESR range 0 mΩ to 100 mΩ
1
3.3-V Setting
0 < IVDD3/5 < 300 mA
VDD3/5 output current, including load from the internal
resistor of 440 Ω (typ.) for 3.3 V setting or 660 Ω (typ.)
for 5 V setting (11)
VDD3/5dyn
VDD3/5 output voltage dynamic
VDD3/5max
Maximum VDD3/5 output voltage during VBATP step
from 5.5 V to 13.5 V within 10 μs
CVDD3/5 = 5 µF, IVDD3/5 < 300 mA
3.5
Vdropout3/5
VDD3/5 output dropout voltage Vdropout3/5 =
(VDD6–VDD3/5)
IVDD3/5 < 300 mA
3.6
PSRRVDD3/5
Power-supply rejection ratio
50 < f < 20 kHz, VBATP = 10 V, U = 4 Vpp
CVDD3/5 = 5 μF, 0 < IVDD3/5 < 300 mA
3.3a
3.3b
3.4
300
Load step 20% to 80% in 5 µs, with 3.3-V Setting
CVDD3/5 = 5 µF
5-V Setting
3.7
LnRegVDD3/5
Line regulation (IVDD3 constant)
0 < IVDD3/5 < 300 mA,
8 V < VBATP < 19 V
3.8
LdRegVDD3/5
Load regulation (VDD6 constant)
0 < IVDD3/5 < 300 mA
8 V < VBATP < 19 V
3.9
TmpCoVDD3/5
Temperature drift
Normalized to 25°C value
3.11
dVDD35/dt
dV/dt at VDD3/5 at start-up
Between 10% and 90% of VDD3/5
end-value
TprotVDD3/5
Temperature protection threshold
3.14
IVDD3/5_limit
Current-limit (13)
3.15
Ipu_SEL_VDD3/5
Pullup current on SEL_VDD3/5 pin
3.15
3.3
3.43
4.85
5
5.15
mA
V
3.3-V Setting
3.6
5-V Setting
5.5
V
0.3
> 40
–25
V
dB
25
mV
mV
–25
25
–0.5%
0.5%
3.3-V Setting
3
30
5-V Setting
5
50
175
210
°C
350
650
mA
20
µA
V/ms
(12)
3.13
µF
V
5-V Setting
IVDD3/5
3.2
5
VDD1 – LDO WITH EXTERNAL FET
AN
Vgs(th)
Gate threshold voltage, external FET
ID = 1 mA
AN
Ciss
Gate capacitance, external FET
VGS = 0 V
AN
Qgate
Gate Charge, external FET
VGS = 0 V to 10 V
AN
gfs
Forward transconductance, external FET
ID = 50 mA
AN
CVDD1
Value of output ceramic capacitor
ESR range 0 mΩ to 100 mΩ
4.1
VDD1
VDD1 output voltage, depends on external resistive
divider
(14)
0.3
3
V
3200
pF
70
nC
5
40
µF
0.8
3.3
V
0.4
4.2
VDD1SENSE
VDD1 reference voltage
4.2a
VDD1SENSE_BIAS
Bias current of VDD1SENSE
4.3
IVDD1
VDD1 output current
Minimum current realized with external resistive divider
4.4
VDD1G
VDD1_G output voltage
Referenced to GND
4.5
VDD1G_off
VDD1_G voltage in OFF condition
20 µA into VDD1_G pin
0.3
V
4.6
I_VDD1G
VDD1_G DC load current
200
µA
4.7
VDD1dyn
VDD1 output voltage dynamic
4.8
VDD1max
10 mA < IVDD1 < 600 mA
0.792
S
0.808
V
–6.6
–10
µA
10
600
mA
15
V
Load step 10% to 90% in 1 μs, with CVDD1 = 40 μF (15)
Maximum VDD1 output voltage during VBATP step
from 5.5 V to 13.5 V within 10 μs
CVDD1 > 6 µF, IVDD1< 600 mA
± 4%
VDD1 = 0.8-V output
0.898
VDD1 = 1.23-V output
1.287
VDD1 = 3.3-V output
3.435
4.9
PSRRVDD1
Power-supply rejection ratio
50 < f < 20 kHz, VBATP = 10 V, U = 4 Vpp,
CVDD1 = 10 μF, 10 mA < IVDD1 < 600 mA
4.10
LnRegVDD1
Line regulation on VDD1_SENSE (IVDD1 constant)
10 mA <
4.11
LdRegVDD1
Load regulation on VDD1_SENSE (VDD6 constant)
10 mA < IVDD1 < 600 mA, 8 V < VBATP < 19 V
IVDD1<
0.8
600 mA, 8 V < VBATP < 19 V
> 40
V
dB
–7
7
mV
–7
7
mV
(11) Less than 50% of maximum loading of IVDD3/5 should be placed on the VDD3/5 regulator before NRES goes high during device power
up.
(12) Protection of VDD3/5, treated as global overtemperature (shutdown for all regulators).
(13) IVDD3/5_limit current limit has snap back behavior. During a short circuit condition, a transient current higher than the maximum will occur
until the current limit snaps back into the specified range.
(14) VDD1 regulation including line and load regulation, temperature drift and long-term drift. Does not include tolerance of resistor divider to
set VDD1 output voltage.
(15) VDD1dyn will depend on external FET choice
Specifications
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Electrical Characteristics (continued)
Over operating ambient temperature TA = –40°C to the maximum-operating junction temperature TJ = 150°C, and with
VBATP = VBAT_SAFING in the recommended operating range (see R1.2 in Section 4.3) (unless otherwise noted)
POS
PARAMETER
TEST CONDITIONS
4.12
TmpCoVDD1
Temperature drift
Normalized to 25°C value
4.14
dVDD1/dt
dV/dt at VDD1_SENSE at start-up
MIN
TYP
MAX
UNIT
–0.5%
0.5%
Between 10% and 90% of VDD1 end-value
0.8
8
V/ms
ESR range 0 mΩ to 100 mΩ
0.5
10
µF
3.3
9.5
V
35
mV
VSOUT1 – LDO WITH PROTECTED INTERNAL FET
AN
CVSOUT1
Value of output ceramic capacitor
5.1
VSOUT1
VSOUT1 output voltage, depends on external resistive
divider and tracking or non-tracking mode
5.2
MVVSOUT1
For tracking mode:
Matching output error MVVSOUT1 =
(VTRACK1 – VSFB1) (16)
0 < IVSOUT1 < 100 mA
–35
5.3
VSFB1
For non-tracking mode: VSOUT1 reference voltage (17)
10 mA < IVSOUT1 < 100 mA
2.45
2.5
2.55
V
5.3a
VTRACK1th
Threshold for selecting tracking/non-tracking mode
(VTRACK1 > VTRACK1th_max V for tracking mode,
VTRACK1 < VTRACK1th_min V non-tracking mode)
1.1
1.2
1.3
V
5.3b
VTRACK1pd
Internal pulldown resistance on VTRACK1 pin
5.4
IVSOUT1
VSOUT1 output current, including internal resistor to
dissipate minimum current (18)
5.5
VdrS1
VSOUT1 dropout voltage VdrS1 = (VSIN-VSOUT1)
0 < IVSOUT1 < 100 mA
100
kΩ
100
mA
0.75
V
5.6
PSRRVSOUT1
Power-supply rejection ratio
With VTRACK1 = GND, VSOUT1 = 4.5V,
50 < f < 20 kHz,
VSIN = 10 V, U = 4 Vpp
CVSOUT1 = 1 μF, 0 < IVSOUT1 < 100 mA,
5.7
LnRegVSOUT1
Line regulation (IVSOUT1 constant)
0 < IVSOUT1 < 100 mA, 8 V < VSIN < 19 V
–25
25
mV
5.8
LdRegVSOUT1
Load regulation (VSIN constant)
0 < IVSOUT1 < 100 mA, 8 V < VSIN < 19 V
–35
35
mV
5.9
TmpCoVSOUT1
Temperature drift
Normalized to 25°C value
–0.5%
0.5%
5.11
VSOUT1SH
Output short circuit voltage range
VSOUT1 (VSFB1 configured for regulation) (19)
–2
18
V
5.12
–IVSIN
Output reverse current
VSOUT1 = 14 V and VBATP = 0 V, regulator switched off
20
mA
5.13
TprotVSOUT1
Temperature protection threshold (20)
175
210
°C
5.14
IVSOUT1_limit
Current-limit
120
500
mA
> 40
dB
VOLTAGE MONITORING
6.1
VBATP_UVoff
VBATP and VBAT_SAFING level for indication by
VBAT_UV comparitor (21)
VBATP = VBAT_SAFING
4.2
4.5
V
6.2
VBATP_UVon
VBATP and VBAT_SAFING level for indication by
VBAT_UV comparitor (21)
VBATP = VBAT_SAFING
5.4
5.8
V
6.3
VBATP_UVhys
Undervoltage hysteresis
VBATP = VBAT_SAFING
1.1
1.4
V
6.4
VBATP_OVrise
VBATP level for setting VBAT_OV flag (22)
VBATP = VBAT_SAFING
34.7
36.7
V
6.5
VBATP_OVfall
VBATP level for clearing VBAT_OV flag (23)
VBATP = VBAT_SAFING
34.4
36.3
V
VDD5 undervoltage level
VBATP = VBAT_SAFING
4.5
4.85
Hysteresis
VBATP = VBAT_SAFING
VDD5 undervoltage headroom (VDD5act –
VDD5_UVact)
VBATP = VBAT_SAFING
200
VDD5 overvoltage level
VBATP = VBAT_SAFING
5.2
Hysteresis
VBATP = VBAT_SAFING
VDD5 overvoltage headroom (VDD5_OVact –
VDD5act)
VBATP = VBAT_SAFING
6.8
V
VDD5_UV
6.8a
6.9
VDD5_UVhead
6.10
140
mV
mV
5.45
V
VDD5_OV
6.10a
6.11
VDD5_OVhead
140
200
mV
mV
(16) Referenced to VTRACK1 input, including long-term and temperature drift.
(17) VSOUT1 including line and load regulation, temperature drift and long-term drift.
(18) VSOUT1 maximum power dissipation for the internal FET must not exceed 0.6 W to avoid overtemperature. Special consideration must
be taken for output voltages greater than 5 V and when VBATP is used to supply VSIN instead of VDD6.
(19) VSOUT1 is connected to VSFB1 directly (for unity gain) or through resistor divider (tracking mode gain or non-tracking mode output
voltage adjusting). In case of a short to supply fault, the voltage on VSOUT1 is equal to the supply to the device (VBATP,
VBAT_SAFING, and VSIN where VSIN is connected to VBATP as it's supply instead of VDD6) and VSFB1 voltage will follow VSOUT1
based on the use case, directly (for unity gain) or via resistor divider (tracking mode gain or non-tracking mode output voltage adjusting).
(20) Protection of VSOUT1 Sensor Supply. Only VSOUT1 switch-offs off.
(21) VBATP_UVoff and VBATP_UVon are the threshold levels for VBATP where UV will be indicated by the VBAT_UV bit in VMON_STAT_1
register. The VBATP level that will allow device power up is outlined by R1.1.
(22) Brings device into the RESET state and sets flag in SPI
(23) Clears flag in SPI
34
Specifications
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Electrical Characteristics (continued)
Over operating ambient temperature TA = –40°C to the maximum-operating junction temperature TJ = 150°C, and with
VBATP = VBAT_SAFING in the recommended operating range (see R1.2 in Section 4.3) (unless otherwise noted)
POS
PARAMETER
TEST CONDITIONS
3.3-V setting
6.12
VDD3/5 undervoltage level
MIN
TYP
MAX
3
3.17
4.5
4.85
VBATP = VBAT_SAFING
UNIT
V
5-V setting
VDD3/5_UV
6.12a
6.13
Hysteresis
VDD3/5_UVhead
3.3-V setting
100
5-V setting
140
VBATP = VBAT_SAFING
VDD3/5 undervoltage headroom
(VDD3/5act – VDD3/5_UVact)
VBATP = VBAT_SAFING
VDD5_3 overvoltage level
VBATP = VBAT_SAFING
6.14
mV
3.3-V setting
155
5-V setting
200
3.3-V setting
3.43
3.6
5.2
5.5
mV
V
5-V setting
VDD3/5_OV
Hysteresis
3.3-V setting
100
5-V setting
140
VBATP = VBAT_SAFING
6.14a
mV
3.3-V setting
170
5-V setting
200
VDD3/5 undervoltage headroom
(VDD3/5_OVact – VDD3/5act)
VBATP = VBAT_SAFING
VDD1 undervoltage level
VBATP = VBAT_SAFING. Sensed on VDD1_SENSE pin.
Relative thresholds are with respect to nominal 800-mV
VDD1SENSE (Pos 4.2)
6.16a
Hysteresis
VBATP = VBAT_SAFING. Sensed on VDD1_SENSE pin.
Relative thresholds are with respect to nominal 800-mV
VDD1SENSE (Pos 4.2)
6.17
VDD1 overvoltage level
VBATP = VBAT_SAFING. Sensed on VDD1_SENSE pin.
Relative thresholds are with respect to nominal 800-mV
VDD1SENSE (Pos 4.2)
Hysteresis
VBATP = VBAT_SAFING. Sensed on VDD1_SENSE pin.
Relative thresholds are with respect to nominal 800-mV
VDD1SENSE (Pos 4.2)
6.15
VDD3/5_UVhead
6.16
VDD1_UV
mV
752
784
10
816
mV
mV
848
mV
VDD1_OV
6.17a
9
mV
Sensed on VSFB1 pin. Relative thresholds (ratio) are:
6.19
VSOUT1_UV
VSOUT1 undervoltage level
•
For non-tracking mode, with respect to nominal 2.5-V
VSFB1 (Pos 5.3)
•
For tracking mode, with respect to voltage applied on
VTRACK1 pin
•
In tracking mode, VSOUT1_UV comparator output is
valid for VTRACK1 DC condition
0.88
0.94
VSOUT
1
1.06
1.12
VSOUT
1
Sensed on VSFB1 pin. Relative thresholds (ratio) are:
6.20
VSOUT1_OV
VSOUT1 overvoltage level
•
For non-tracking mode, with respect to nominal 2.5-V
VSFB1 (Pos 5.3)
•
For tracking mode, with respect to voltage applied on
VTRACK1 pin
•
In tracking mode, VSOUT1_OV comparator output is
valid for VTRACK1 DC condition
VDD6 undervoltage level (24)
6.22
5.2
5.4
V
VDD6_UV
6.22a
Hysteresis
115
VDD6 overvoltage level (24)
6.23
7.8
mV
8.2
V
VDD6_OV
6.23a
Hysteresis
115
mV
IGNITION AND CAN WAKE-UP
7.1
IGN_WUP
IGN wake-up threshold (25)
VBATP = VBAT_SAFING =12 V
2
3
7.2
CAN_WUP
CAN wake-up threshold (25)
VBATP = VBAT_SAFING =12 V
2
3
7.3
WUP_hyst
Wake-up hysteresis
VBATP = VBAT_SAFING =12 V
50
200
mV
7.4
I_IGN
IGN pin forward leakage current
IGN pin at 36 V,
VBATP = VBAT_SAFING = 12V
50
µA
7.5
I_IGN_rev
IGN reverse current
IGN at –7 V, VBATP = VBAT_SAFING =12 V
7.7
I_CANWU
CANWU pin forward leakage current
CANWU pin at 36 V,
VBATP = VBAT_SAFING = 12V
7.8
I_CAN_rev
CANWU reverse current
CANWU at –0.3 V, VBATP = VBAT_SAFING =12 V
–1
V
V
mA
50
µA
mA
CHARGE PUMP
AN
Cpump
Pumping capacitor (between CP1 and CP2)
AN
Cstore
Storage capacitor (between VCP and VBATP)
10
8.1
VCPon
VCP output voltage in on-state
VBATP > 5.8 V
8.2
ICP
External load
Load coming from RGS of Reverse Battery Protection
nF
100
VBATP +
4
nF
VBATP
+ 15
V
100
µA
(24) Information in SPI register only
(25) For device wake up, VBATP and VBAT_SAFING must be operating range, Recommended Operating Conditions R1.1 and R1.3a, and
then a level on either IGN or CANWU to allow the device to start up, especially when VBATP and VBAT_SAFING are ramping.
Specifications
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Electrical Characteristics (continued)
Over operating ambient temperature TA = –40°C to the maximum-operating junction temperature TJ = 150°C, and with
VBATP = VBAT_SAFING in the recommended operating range (see R1.2 in Section 4.3) (unless otherwise noted)
POS
8.3
PARAMETER
fCP
TEST CONDITIONS
Charge-pump switching frequency
MIN
TYP
MAX
UNIT
225
250
275
kHz
RESET AND ENABLE OUTPUTS
9.1
VNRES_ENDRV_L
NRES / ENDRV low-output level
9.2
RNRES_ENDRV_PULLUP
NRES / ENDRV internal pullup resistance
With external 2-mA open-drain current
9.2a
RDS(on)_ENDRV_NRES
RDS(on) NRES/ENDRV pulldown transistor
9.3
RRSTEXT
Value of external reset extension resistor,
in case of open-connect, device stays in RESET
state (26)
9.5
VENDRV_NRES_TH
ENDRV and NRES input readback logic 1 threshold
3
Read-back muxed to DIAG_OUT pin
0
22
350
400
0.2
V
6
kΩ
40
Ω
kΩ
450
mV
DIGITAL INPUT / OUTPUT
VDIGIN_HIGH
Digital input, high level for NCS, SDI, SCLK,
ERROR/WDI and SEL_VDD3/5
10.2
VDIGIN_LOW
Digital input, low level for NCS, SDI, SCLK,
ERROR/WDI and SEL_VDD3/5
10.3
VDIGIN_HYST
Digital input hysteresis for NCS, SCI, SCLK and
ERROR/WDI (27)
10.1
2
V
0.8
0.1
10.4
RDIAGOUT_AMUX
Output resistance at DIAG_OUT pin in AMUX mode
BG1 selected on AMUX, < 200 nA current in or out of
DIAG_OUT pin
10.5
VDIGOUT_HIGH
Digital output, high level (28)
IOUT = –2 mA (out of pin)
10.6
VDIGOUT_LOW
Digital output, low level (28)
IOUT = 2 mA (into pin)
V
V
15
VDDIO –
0.2
kΩ
V
0.2
V
SERIAL PERIPHERAL INTERFACE
13.12 RPULL_UP
Internal pullup resistor on NCS input pin
40
70
100
kΩ
13.13 RPULL_DOWN
Internal pulldown resistor on SDI and SCLK input pins
40
70
100
kΩ
(26) The maximum resistance recommend for RSTEXT to ground is 120 kΩ.
(27) SEL_VDD3/5 is sampled and latched at device power up hysteresis, VDIGIN_HYST , does not apply.
(28) For pins SDO and DIAG_OUT in DMUX mode.
4.6
Timing Requirements
Over operating ambient temperature TA = –40°C to the maximum-operating junction temperature TJ = 150°C, and VBATP =
VBAT_SAFING in the recommended operating range (see R1.2 in the Section 4.3) (unless otherwise noted)
POS
MIN
NOM
MAX
UNIT
VDD5 – LDO WITH INTERNAL FET
2.12
tdelayVDD5
VDD5 voltage stabilization delay
Maximum delay between rising edge on
CANWU pin until VDD5 reaches the end-value
within 2%
5
ms
Maximum delay after CANWU wakeup for
VDD3/5 output to settle
5
ms
Maximum delay after CANWU wakeup for
VDD1 output to settle
5
ms
260
µs
VDD3/5 – LDO WITH INTERNAL FET
3.12
tVDD3/5
VDD3/5 voltage stabilization delay
VDD1 – LDO WITH EXTERNAL FET
4.15
tdelayVDD1
VDD1 voltage stabilization delay
VOLTAGE MONITORING
6.7
VBATP_deglitch
VBATP undervoltage and overvoltage monitor deglitch
time
6.18
VDDx_deglitch
VDDx undervoltage and overvoltage monitor deglitch
time
10
40
µs
6.21
VSOUT1_deglitch
VSOUT1 undervoltage and overvoltage monitor deglitch
time
10
40
µs
180
240 (1)
IGNITION AND CAN WAKE-UP (IGN AND CANWU)
7.6
IGN_deg
IGN deglitch filter time
7.5
22
ms
7.9
CANWU_deg
CANWU deglitch filter time
100
350
µs
RESET AND ENABLE OUTPUTS
9.4
tRSTEXT(22kΩ)
Reset extension delay
22 kΩ
4.05
4.5
4.95
ms
9.4a
tRSTEXT(0kΩ)
Reset extension delay
0 kΩ
0.98
1.4
1.89
ms
INTERNAL SYSTEM CLOCK
(1)
36
240 µs for VBAT-UV deglitch and 260 µs for VBAT-OV deglitch
Specifications
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Timing Requirements (continued)
Over operating ambient temperature TA = –40°C to the maximum-operating junction temperature TJ = 150°C, and VBATP =
VBAT_SAFING in the recommended operating range (see R1.2 in the Section 4.3) (unless otherwise noted)
POS
11.1
ƒSysclk
System clock frequency
MIN
NOM
MAX
UNIT
3.8
4
4.2
MHz
14.25
30
32
µs
(2)
WINDOW WATCHDOG
12.2
Deglitch time on ERROR/WDI pin for watchdog-trigger
input signal
tWD_pulse
SERIAL PERIPHERAL INTERFACE TIMING
(3)
5 (4)
VDDIO = 3.3 V
13.1
ƒSPI
SPI clock (SCLK) frequency
tSPI
SPI clock period
13.3
thigh
High time: SCLK logic high duration
85.7
ns
13.4
tlow
Low time: SCLK logic low duration
45
ns
13.5
tsucs
Setup time NCS: time between falling edge of NCS and
rising edge of SCLK
45
ns
13.7
tsusi
Setup time at SDI: setup time of SDI before the falling
edge of SCLK
15
ns
13.9
thcs
Hold time: time between the falling edge of SCLK and
rising edge of NCS
45
ns
thlcs
SPI transfer inactive time (time between two transfers)
during which NCS must remain high
788
ns
13.2
13.10
(2)
(3)
(4)
MHz
VDDIO = 5 V
6
VDDIO = 3.3 V
200
VDDIO = 5 V
167
ns
See Figure 4-2
The system clock is also used to derive the clock for the watchdog timer, so the system clock tolerance also impacts the watchdog-timer
tolerance.
Capacitance at CSDO = 100 pF
MAX SPI Clock tolerance is ±10%
4.7
Switching Characteristics
Over operating ambient temperature TA = –40°C to the maximum-operating junction temperature TJ = 150°C, and VBATP =
VBAT_SAFING in the recommended operating range (see R1.2 in Section 4.3) (unless otherwise noted)
POS
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
53.3
ns
85.7
ns
53.3
ns
Serial Peripheral Interface Timing (1)
13.6
td1
Delay time: time delay from falling edge of NCS to SDO
transitioning from tri-state to 0
13.8
td2
Delay time: time delay from rising edge of SCLK to data valid
at SDO
13.11
ttri
Tri-state delay time: time between rising edge of NCS and
SDO in tri-state
(1)
See Figure 4-2
0
Capacitance at CSDO = 100 pF
NCS
thlcs
thcs
tsucs
SCLK
tsucs
thigh
tlow
SDI
tsusi
tsusi
SDO
td1
td2
ttri
td1
td2
Figure 4-2. SPI Timing Parameters
Specifications
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3.5
VDD-VOH (VDDIO 3.3 V)
VOL (VDDIO 3.3 V)
VDD-VOH (VDDIO 5 V)
VOL (VDDIO 5 V)
3
VOH / VOL (V)
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
IOH / IOL (mA)
30
35
40
C001
Figure 4-3. SPI SDO Buffer Source and Sink Current
4.8
Typical Characteristics
100
90
80
Efficiency (%)
70
60
50
40
30
20
10
VBAT = 7 V
VBAT = 13.8 V
VBAT = 28 V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
Load Current (A)
D001
Figure 4-4. VDD6 BUCK Efficiency
38
Specifications
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5 Detailed Description
5.1
Overview
The device integrates an asynchronous-buck switch mode power-supply converter with an internal FET
that converts the input battery voltage to a 6-V preregulator output, which supplies the integrated
regulators.
A fixed 5-V linear regulator with an internal FET is integrated to be used as, for example, a CAN supply. A
second linear regulator, also with an internal FET, regulates the 6 V to a selectable 5-V or 3.3-V MCU I/O
voltage. A linear regulator controller with an external FET and resistor-divider regulates the 6 V to an
externally adjustable core voltage of between 0.8 V and 3.3 V. A linear regulator with two different modes
of operation (tracking mode and non-tracking mode) with adjustable voltage between 3.3 V and 9.5 V can
be used as a supply for external sensor.
The device monitors undervoltage and overvoltage on all regulator outputs, battery voltage, and internal
supply rails. A second band-gap reference, independent from the main band-gap reference used for
regulation circuit, is used for undervoltage and overvoltage monitoring. In addition, regulator current-limits
and temperature protections are implemented.
The device supports wakeup from IGNITION or wakeup from a CAN transceiver.
5.2
Functional Block Diagram
VDD6
6V
KL30 (Battery)
VDD5
5 V, 300 mA
VDD3/5
3.3 or 5 V, 300 mA
VDD1
0.8 to 3.3 V, 600 mA
Schottky
VBATP
VDD6
VDD1_G
VDD1_SENSE
VDD3/5
SEL_VDD3/5
VDD5
VDD6
SDN6
CP1
VBATP
Schottky
CP2
VCP
ESR
GND or
NoConnect
GND
VDD6
LDO
Internal
FET
Buck
Internal
FET
Charge
Pump
LDO
Internal
FET
LDO
Controller
VBAT_SAFING
VBATP
VBATP or
VDD6
3.3 to 9.5 V,
100 mA
Bias and
Internal
Supply
VSIN
VSOUT1
Bandgap
Reference 1
Voltage
Monitoring
Bandgap
Reference 2
RES Ext
Sensor LDO
Protected
Int. B2B FET
Oscillator 1
VSFB1
TJ
Oscillator
Overtemperature
Monitor
shutdown
EEPROM
CRC
RSTEXT
Digital State
Machine
VTRACK1
Monitoring and
Protection
IGN
NCS
SDI
SDO
WakeUp
CANWU
Reference/Bias
SPI Interface
SCLK
Diagnostics
MCU ERROR
Monitor (ESM) or
Window Watchdog
VDDIO
Power Supply
Q&A
Watchdog
ERROR/WDI
Bandgap 1
Bandgap 2
Reset and
Enable
ENDRV
Diagnostics
NRES
DIAG_OUT
Analog
Mux
VDD5, VDD3/
5 or GND
VDD5 or
VDD3/5
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Feature Description
VDD6 Buck Switch-Mode Power Supply
The purpose of the VDD6 buck switch-mode power supply is to reduce the power dissipation inside the
device as a preregulator. The VDD6 supply regulates from the battery voltage (main supply) range to 6 V.
The VDD6 output is used as the input voltage for the VDD5, VDD3/5, VDD1, and can also be used for
VSOUT1 regulator depending on the required VSOUT1 output voltage. The VDD6 supply is intended as a
preregulator, therefore the output accuracy of VDD6 is less than the other integrated regulators. The
VDD6 current capability is set to supply the VDD5, VDD3/5, VDD1, and VSOUT1 regulators at their
respective maximum output currents. Power dissipation and thermal analysis should be performed to
ensure the PCB design and thermal management can support the required power dissipation in the
application.
This switch-mode power supply operates with fixed-frequency adaptive on-time control PWM. The control
loop is based on a hysteretic comparator. The internal N-channel MOSFET is turned on at the beginning
of each cycle if the sensed voltage on the VDD6 pin is below the hysteretic comparator threshold. When
the MOSFET is turned on, it is on for a minimum of 7% duty cycle (7% of fclk_VDD6). This MOSFET is
turned off when the hysteretic comparator detects a voltage on the VDD6 pin above the threshold. The
VDD6 regulator may skip pulses if the output voltage remains above the hysteretic comparator when the
clock edge occurs. When the MOSFET is turned off, the external Schottky diode recirculates the energy
stored in the inductor for the remainder of the switching period. The VDD6 regulator enters dropout mode
(100% duty cycle) for a supply voltage below approximately 7 V on the VBATP pin.
The internal MOSFET is protected from excessive power dissipation by a current-limit circuit. The VDD6
regulator also shares an overtemperature protection circuit with the VDD3/5 regulator. When
overtemperature is detected by this circuit, the device transitions to the STANDBY state (all regulators
switched off).
Because the control loop of the VDD6 regulator is based on a hysteretic comparator, the effective
capacitance on the output, and effective series resistance (ESR) of the output capacitance must be
considered. The effective capacitance of the output capacitors at the operating voltage (6 V, DC bias
derating), tolerance, temperature range, and lifetime must meet the effective capacitance range for VDD6
(CVDD6). The capacitor supplier should provide the necessary derating data to calculate the effective
capacitance. The hysteretic comparator also requires a specified ESR to ensure balanced operation.
Typically low-ESR ceramic capacitors are used for the output, so an external resistor is required to bring
the total ESR into the specified ESR range for the CVDD6. A general guideline to achieve balanced
operation is RESR = L / (15 × CEffective). Using a higher-effective output capacitance allows for a lower ESR,
which leads to lower-voltage ripple. Additionally, the inductance influences the system: using a lower
inductance value allows for lower ESR, however, the peak inductor current will be higher.
5.3.2
VDD5 Linear Regulator
The VDD5 pin is a regulated supply of 5 V ±2% overtemperature and battery supply range. A low-ESR
ceramic capacitor is required for loop stabilization. This capacitor must be placed close to the pin of the
device. This output is protected against shorts to ground by a current-limit. This output also limits outputvoltage overshoot during power up and during line or load transients.
On an initial IGN or CANWU power cycle, the soft-start circuit on this regulator is initiated, which is
typically from 1 ms to 2 ms. This output can require a larger output capacitor to ensure that during load
transients the output does not drop below the required regulation specifications.
The internal MOSFET is protected from excess power dissipation with junction-overtemperature
protection. In case of an overtemperature condition in the VDD5 pin, only the VDD5 regulator switches off
by clearing bit D4 in the SENS_CTRL register. To re-enable the VDD5 pin, bit D4 in the SENS_CTRL
register must be set again.
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5.3.3
SLVSBC4G – MAY 2012 – REVISED JUNE 2017
VDD3/5 Linear Regulator
The VDD3/5 pin is a regulated supply of 3.3 V or 5 V ±2% overtemperature and battery supply range. The
output voltage level is selected with the SEL_VDD3/5 pin (open pin selects 3.3 V, grounded pin selects
5 V). The state of this selection pin is sampled and latched directly at the first initial IGN or CANWU power
cycle. When latched, any change in the state of this selection pin after the first initial IGN or CANWU
power cycle does not change the initially selected state of the VDD3/5 regulator.
A low-ESR ceramic capacitor is required for loop stabilization. This capacitor must be placed close to the
pin of the device. This output is protected against shorts to ground by a current-limit. This output also
limits output-voltage overshoot during power up or during line or load transients.
On an initial IGN or CANWU power cycle, the soft-start circuit on this regulator is initiated, which is
typically from 1 ms to 2 ms. This output may require a larger output capacitor to ensure that during load
transients the output does NOT drop below the required regulation specifications.
The internal MOSFET is protected from excess power dissipation with a current-limit circuit and junction
overtemperature protection. In case of an overtemperature in the VDD3/5 pin, the TPS65381-Q1 device
enters the STANDBY state (all regulators switched-off).
5.3.4
VDD1 Linear Regulator
The VDD1 pin is an adjustable regulated supply from 0.8 V to 3.3 V. This regulator uses a ±2% reference
(VDD1SENSE). The tolerance of the external feedback resistor divider resistors have an impact to the
overall VDD1 regulation tolerance. To reduce on-chip power consumption, an external power NMOS is
used. The regulation loop and the command gate drive are integrated. TI recommends applying a resistor
with a value of 100 kΩ to 1 MΩ between the gate and source of the external power NMOS. The VDD1
gate output is limited to prevent gate-source overvoltage stress during power up or during line or load
transients.
On an initial IGN or CANWU power cycle, the soft-start circuit on this regulator is initiated, which is
typically from 1 ms to 2 ms. This soft-start is meant to prevent any voltage overshoot at start-up. The
VDD1 output may require larger output capacitor to ensure that during load transients the output does not
drop below the required regulation specifications.
The VDD1 LDO has no current-limit and no overtemperature protection for the external NMOS FET.
Therefore, supplying the VDD1 pin from the VDD6 pin is recommended (see Section 5.2). In this way, the
VDD6 pin current-limit acts as current-limit for the VDD1 pin and the power dissipation is limited also. To
avoid damage in the external NMOS FET, selecting the current rating of the VDD1 pin well above the
maximum-specified VDD6 current-limit is recommended.
If the VDD1 regulator is not used, leave the VDD1_G and VDD1_SENSE pins open. An internal pullup
device on the VDD1_SENSE pin detects the open connection and pulls up the VDD1_SENSE pin. This
forces the regulation loop to bring the VDD1_G output down. This mechanism also masks the VDD1_OV
flag in VMON_STAT_2 register and therefore the ENDRV pin action from a VDD1 overvoltage (OV)
condition is also masked. These actions are equivalent to clearing the NMASK_VDD1_UV_OV bit in the
DEV_CFG1 register to 0. This internal pullup device on the VDD1_SENSE pin also prevents a real VDD1
overvoltage on the MCU core supply in case of an open connection to the VDD1_SENSE pin, as it brings
the VDD1_G pin down. Therefore, in this situation, the VDD1 output voltage is 0 V.
By default, VDD1 monitoring is disabled. If the VDD1 pin is used in the application, TI recommends to set
the NMASK_VDD1_UV_OV bit in the DEV_CFG1 register to 1 when the device is in the DIAGNOSTIC
state. This setting enables driving and extending the reset to the external MCU when a VDD1
undervoltage event is detected.
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VSOUT1 Linear Regulator
The VSOUT1 regulator is a regulated supply with two separate modes: tracking mode and non-tracking
mode. The mode selection occurs with the VTRACK1 pin. When the voltage applied on the VTRACK1 pin
is above 1.2 V, the VSOUT1 pin is in tracking mode. When the VTRACK1 pin is shorted to ground, the
VSOUT1 regulator is in non-tracking mode. This mode selection occurs during the first ramp-up of the
VDDx rails and is latched after the first VDDx ramp-up is complete. Therefore, after completion of the
VDDx ramp-up, any change on the VTRACK1 pin no longer affects the selected tracking or non-tracking
mode.
In tracking mode, the VSOUT1 regulator tracks the input reference voltage on the VTRACK1 pin with a
gain factor determined by the external resistive divider. The tracking offset between the VTRACK1 and
VSFB1 pins is ±35 mV. This mode allows, for instance, the VSOUT1 output voltage to be 5 V while
tracking the VDD3 (3.3-V) supply. In unity-gain feedback, the VSOUT1 output voltage can directly follow
the VDD5 pin or the VDD3 pin.
In non-tracking mode, the VSOUT1 output voltage is proportional to a fixed reference voltage of 2.5 V at
the VSFB1 pin, with a gain factor determined by the external resistive divider. This mode allows the
VSOUT1 pin to be any factor of the internal reference voltage.
Both in tracking and non-tracking mode, the VSOUT1 output voltage must be 3.3 V or higher. The
VSOUT1 regulator can track the VDD3/5 pin in 3.3-V setting within the specified limits.
The VSOUT1 regulator has a separate input supply to reduce the internal power dissipation. For an output
voltage of 3.3 V or 5 V, for instance, the VDD6 supply can be used as the input supply. For an output
voltage greater than 5 V, the VBATP pin can be used as the input supply. The maximum power
dissipation for the internal FET must not exceed 0.6 W to avoid overtemperature (thermal shutdown).
A low-ESR ceramic capacitor is required for loop stabilization; this capacitor must be placed close to the
pin of the device. This supply limits output-voltage overshoot during power up or during line or load
transients.
This supply rail is intended for going outside the ECU and therefore is protected against shorts to external
chassis ground by a current-limit. The supply rail can be shorted externally within the specified short circuit
voltages, VSOUT1SH. If the output can be shorted to voltages outside the specified short circuit voltage
range, additional external protection is required.
The VSOUT1 regulator is disabled by default on start-up. After the NRES pin release, the MCU can
enable the VSOUT1 regulator through a SPI command by setting bit D0 in the SENS_CTRL register. After
this SPI command, the soft-start circuit on this regulator is initiated, which is typically from 1 ms to 2 ms.
This output may require a larger output capacitor to ensure that during load transients the output does
NOT drop below the required regulation specifications. Regardless of tracking or non-tracking mode, the
VSFB1 pin is ramped to the desired value after completion of the soft start.
The internal MOSFET is protected from excess power dissipation with a current-limit circuit and junctionovertemperature protection. In case of an overtemperature condition in the VSOUT1 pin, only the
VSOUT1 regulator is switched off by clearing bit 0 in the SENS_CTRL register. To re-enable the VSOUT1
pin, first bit 2 in the SAFETY_STAT 1 register must be cleared on read-out, and afterwards bit 0 in the
SENS_CTRL register must be set again.
The VSOUT1 pin voltage can be observed by the ADC input of the MCU through the DIAG_OUT pin (see
Section 5.4.9), which allows the detection of a short to any other supply prior to enabling the VSOUT1
LDO.
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NOTE
The VSOUT1_EN bit is in the SENS_CTRL register which is only reinitialized by a power-on
reset (NPOR) event and not a transition through the RESET state. If the VSOUT1_EN bit
was previously set to 1, it remains set to 1 and the VSOUT1 regulator remains enabled after
events that cause a transition to the RESET state. In a fault case that would cause an
undervoltage or overvoltage on the VSOUT1 pin, when a BIST runs automatically on the
transition from the RESET to the DIAGNOSTIC state, the VSOUT1_UV or VSOUT1_OV
condition during the BIST run would cause the device to go to the SAFE state because of the
detected ABIST_ERR.
5.3.6
Charge Pump
The charge pump is used to generate an overdrive voltage from the VBATP supply that is used for driving
the gates of the internal NMOS FETs in the VDDx and VSOUT1 supply rails. The charge pump is a
hysteretic architecture, when the VCP voltage is high enough, the CP_OV bit sets and the charge pump
stops pumping until the VCP voltage drops below the threshold, the CP_OV bit clears and the charge
pump starts pumping again. The charge pump overdrive is provided internally to the device through the
linear regulators, VCP12 and VCP17. Furthermore, this overdrive voltage can drive the gate of an external
NMOS FET acting as reverse-battery protection. Such reverse-battery protection allows for lower battery
voltage operation compared to a traditional reverse battery-blocking diode. When using the charge pump
(VCP) to drive the gate of an NMOS for reverse battery protection, a series resistance of about 10 kΩ
must be connected between the VCP pin and the gate of the NMOS FET (see Section 5.2). This series
resistance is required to limit any current out of the VCP pin when the gate of the NMOS FET is driven to
a negative voltage, because the absolute maximum rating of the VCP pin is limited to –0.3 V because of a
parasitic reverse diode to the substrate (ground).
The charge pump requires two external capacitors, one pumping capacitor (Cpump) and one storage
capacitor (Cstore). To have sufficient overdrive voltage out of the charge pump even at low battery voltage,
the external load current on the VCP pin must be less than 100 µA.
5.3.7
Wake-Up
The TPS65381-Q1 device has two wake-up pins: IGN and CANWU. Both pins have a wake-up threshold
level from 2 V to 3 V, and a hysteresis from 50 mV to 200 mV.
The IGN wake-up pin is level-sensitive and is deglitched with the IGN_deg deglitch (filter) time. The
TPS65381-Q1 device provides a power-latch function (POST_RUN) for this IGN pin, allowing the MCU to
decide when to power down the TPS65381-Q1 device through SPI command. For this, the MCU must set
the IGN power-latch bit 4 (IGN_PWRL) in the SPI SAFETY_FUNC_CFG register, and read the unlatched
status of the deglitched (filtered) IGN pin on the SPI register, DEV_STAT, bit 0 (IGN). To enter the
STANDBY state, the MCU must clear the IGN_PWRL bit. For this, the TPS65381-Q1 device must be in
the DIAGNOSTIC state because this SPI register is only writable in the DIAGNOSTIC state. The
IGN_PWRL bit is also cleared after a detected CANWU wake-up event. Furthermore, the TPS65381-Q1
device provides an optional transition to the RESET state after a detected IGN wake-up during
POST_RUN (see Figure 5-2).
The CANWU pin is level sensitive and is deglitched with CANWU_deg (filter) time. The deglitched (filtered)
CANWU wake-up signal is latched, into CANWU_L, allowing the MCU to decide when to power down the
TPS65381-Q1 device through the WR_CAN_STBY SPI command.
NOTE
The WR_CAN_STBY command should not be written to the device while the CANWU pin or
IGN pin is still high. The device starts to transition to the STANDBY state and immediately
transitions to the RESET state because of the wake-up request received on the CANWU or
IGN pin. The registers are reinitialization according to post LBIST (because of a RESET
transition) or according to NPOR (because of a STANDBY transition).
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Both the IGN and CANWU pins are high voltage pins. If the pins are connected to lines with transients, the
application should provide proper filtering and protection to ensure the pins stay within the specified
voltage range.
NOTE
If the application does not require wake up from IGN (ignition or KL15) or wake up from
CANWU (a CAN or other transceiver), but the device should wake up any time power is
supplied, one method is to connect the IGN pin to the VBATP pin (and VBAT_SAFING)
through a 10-kΩ or greater series resistor. When the VBATP supply is turned on, the IGN pin
also goes high and allows the device to wake up (power up) as soon as the voltage levels
allow the release of NPOR circuits for the VBATP and VBAT_SAFING pins, and the IGN pin
is high.
5.3.8
Reset Extension
During a power-up event, the TPS65381-Q1 device releases the reset to the external MCU through the
NRES pin with a certain delay time (reset extension time) after the VDD3/5 and VDD1 pins have crossed
the respective undervoltage thresholds.
This reset extension time is externally configurable with a resistor between the RESEXT pin and ground.
When shorting the RESEXT pin to ground, the minimum reset extension time is typically 1.4 ms. For a 22kΩ external resistor, the typical reset extension time is 4.5 ms.
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5.4
5.4.1
SLVSBC4G – MAY 2012 – REVISED JUNE 2017
Device Functional Modes
Power-Up and Power-Down Behavior
Figure 5-1 shows the power-up and power-down behavior.
IGN
7.5-ms (min) to 22-ms (max) deglitch time
7.5-ms (min) to 22-ms (max) deglitch time
OR
CANWU
Min.350-µs pulse width
SPI
OR
WR_CAN
_STBY
x
x
1-ms (typical) start-up delay
VCP
< 200-µs start-up time
VBATP + 12 V
VCP is turned-off approximately
5 ms after NRES is driven low
VCP_UV
VBATP - Vdiode
Note:
The actual rampdown
time of VCP depends on
external load conditions
VDD6
6V
VDD6 is turned-off approximately
5 ms after NRES is driven low
VDD6_UV level
VDD5, VDD3/5, VDD1
Note:
Device turns off all internal
biasing for low-Iq when NRES
is driven LOW
3 V
010b
0111b
D3.9
DFT
Signal reserved for production test
010b
1000b
D3.10
NVBAT_UV
VBAT undervoltage comparator (inverted)
010b
1001b
D3.11
VBATP_OV
VBAT overvoltage comparator
010b
1010b
D3.12
VDD5_OT
VDD5 overtemperature
010b
1011b
D3.13
VDD3/5_OT
VDD3/5 overtemperature
010b
1100b
D3.14
VSOUT1_OT
VSOUT1 overtemperature
010b
1101b
D3.15
VDD5_CL
VDD5 current-limit
010b
1110b
D3.16
VDD3_CL
VDD3 current-limit
010b
1111b
Table 5-8. Digital MUX Selection Table – Group 4
SIGNAL
NUMBER
SIGNAL NAME
DESCRIPTION
CHANNEL GROUP
DIAG_MUX_SEL
[6:4]
CHANNEL
NUMBER
DIAG_MUX_SEL
[3:0]
D4.1
RSV
Reserved, logic 0
011b
0000b
D4.2
VSOUT1_CL
VSOUT1 current-limit
011b
0001b
D4.3
NVSOUT1_UV
VSOUT1 undervoltage comparator (inverted)
011b
0010b
D4.4
VSOUT1_OV
VSOUT1 overvoltage comparator
011b
0011b
D4.5
NDVDD_UV
DVDD undervoltage comparator (inverted)
011b
0100b
D4.6
DVDD_OV
DVDD overvoltage comparator
011b
0101b
D4.7
RSV
Reserved
011b
0110b
D4.8
VS_TRK_MODE
VSOUT1 in track-mode indication
011b
0111b
D4.9
VMON_TRIM_ERR
VMON trim error
011b
1000b
D4.10-16
RSV
Reserved
011b
1001b-1111b
CHANNEL GROUP
DIAG_MUX_SEL
[6:4]
CHANNEL
NUMBER
DIAG_MUX_SEL
[3:0]
0000b
Table 5-9. Digital MUX Selection Table – Group 5
SIGNAL
NUMBER
SIGNAL NAME
DESCRIPTION
D5.1
RSV
Reserved, logic 0
111b
D5.2
TI_TEST_MODE
TI production test mode indication
111b
0001b
D5.3-16
DFT
Signal reserved for production test
111b
0010b-1111b
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A diagnostic check at the SDO digital-output pin is also possible in DMUX mode. For this diagnostic
check, the following sequence is required:
1. The MUX_CFG[1:0] configuration must be set to 01b for DIGITAL MUX mode.
2. The SPI NCS must be kept HIGH.
3. The state of the SDO pin is controlled by the SPI_SDO bit (bit D6 in the DIAG_CFG_CTRL register).
During this SDO check at the SDO pin, the DIAG_OUT pin is kept low if no signal from the Digital MUX
Selection table is selected.
5.4.9.3
Diagnostic MUX Output State (by MUX_OUT bit)
For a diagnostic interconnect check between the DIAG_OUT pin and the MCU analog-digital input pin, the
state of the DIAG_OUT pin is controlled with the SPI bit, MUX_OUT, in the DIAG_CFG_CTRL register. To
use this mode, the MUX_CFG[1:0] bits must be set to 00b in the DIAG_CFG_CTRL register.
5.4.9.4
MUX Interconnect Check
For performing a diagnostic interconnect check at the digital input pins (ERROR/WDI, NCS, SDI, and
SCLK), the MUX_CFG[1:0] bits in the DIAG_CFG_CTRL register must be set to 11b. The INT_CON[2:0]
bits in the DIAG_CFG_CTRL register can select which of these digital inputs to be multiplexed to the
DIAG_OUT pin (see the description of DIAG_CFG_CTRL register in Section 5.5.1).
5.4.10 Watchdog Timer (WD)
The watchdog monitors the correct operation of the MCU. This watchdog requires specific triggers, or
messages, from the MCU in specific time intervals to detect correct operation of the MCU. The MCU can
control the logic level of the ENDRV pin with the ENABLE_DRV bit when the watchdog detects correct
operation of the MCU. When the watchdog detects incorrect operation of the MCU, the device pulls the
ENDRV pin low. This ENDRV pin can be used in the application as a control signal to deactivate the
power output stages, for example a motor driver, in case of incorrect operation of the MCU. This function
is consequently referred to as the watchdog-enabled function.
The watchdog has two different modes, which are defined as follows:
Trigger mode: In trigger mode, the MCU applies a trigger (pulse) on the ERROR/WDI pin to send the
required watchdog event for trigger mode. The watchdog operates in trigger mode as the
default mode when the device goes from the RESET state to the DIAGNOSTIC state. The
MCU error signal monitor (ESM) should not be used when the watchdog operates in trigger
mode.
Question-answer mode (Q&A mode): In Q&A mode, the MCU sends watchdog answers through SPI.
To select the Q&A mode, the MCU must set the WD_CFG bit (bit 5) in the safety-function configuration
register (SAFETY_FUNC_CFG) while in the DIAGNOSTIC state. When the watchdog operates in Q&A
mode, the MCU error signal monitor (ESM) may be used.
5.4.11 Watchdog Fail Counter, Status, and Fail Event
The watchdog includes a watchdog fail counter (WD_FAIL_CNT[2:0]) which increments because of bad
events or decrements because of good events. When the value of the watchdog fail counter is 5 or more,
the watchdog status is out-of-range and the ENDRV pin is low (the watchdog-enabled function is
disabled).
When the watchdog fail counter is 4 or less, the watchdog status is in-range and the watchdog no longer
disables the watchdog-enabled function. In this case, the device pulls up the ENDRV pin when the
ENABLE_DRV control bit (in the SAFETY_CHECK_CTRL register) is set and when the device detects no
other errors that impact the level of the ENDRV pin.
The watchdog fail counter operates independently of the state of the watchdog reset configuration bit (bit
3), WD_RST_EN, in the SAFETY_FUNC_CFG register.
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The watchdog fail counter responds as follows:
• A good event decrements the fail counter by one, down to the minimum of zero.
• A bad event increments the fail counter by one, up to the maximum of seven.
• A time-out event increases the fail counter by one, up to the maximum of seven, and sets the
TIME_OUT flag (WD_STATUS register, bit 1).
The definitions of good event, bad event and time-out event are listed Section 5.4.14 and Section 5.4.15.
VDDIO
4.5 k
ENABLE_DRV Bit
(SAFETY_CHECK_CTRL
Register)
SPI Bus or
ERROR/WDI
Pin
Watchdog
Event (Trigger
or Q&A Mode)
ENDRV Pin
ENABLE_DRV
Watchdog Status
WD_FAIL_CNT[2:0] > 4
Good Event (-1)
Watchdog Fail
Counter
Bad Event (+1)
WD_RST_EN Bit
(SAFETY_FUNC_CFG
Register)
Watchdog Status
WD_FAIL_CNT[2:0] = 7 + 1
Go to RESET State
WD_RST_EN Status
Figure 5-5. Watchdog Impact on ENDRV and RESET
Table 5-10. Watchdog Status for Range of the Watchdog Fail Counter Value
WATCHDOG FAIL
COUNTER
WD_FAIL_CNT[2:0]
The watchdog status is based
on the WD_FAIL_CNT[2:0]
value.
000b THROUGH 100b
Watchdog in-range
101b THROUGH 111b
Watchdog is out-of-range
111b
If the WD_RST_EN
bit is set to 1, the
NRES pin is pulled
low, the device is in
the RESET state on
next "bad" or "timeout" event to the
watchdog
The watchdog fail counter is initialized to a count of 5 when the device enters the DIAGNOSTIC state
(after going through the RESET state) and when the device transitions from the DIAGNOSTIC state to the
ACTIVE state.
When the watchdog fail counter reaches a count of 7, another bad event does not change the counter: the
counter remains at 7. However, if the watchdog reset is enabled (WD_RST_EN bit in the
SAFETY_FUNC_CFG register is set to 1), on the next bad event or time-out event (7 + 1) the device
enters the RESET state and resets the MCU by pulling the NRES pin low. In the RESET state, the
watchdog fail counter reinitializes to 5. If the watchdog fail counter is at seven when the WD_RST_EN bit
is set to 1, the device immediately enters the RESET state without requiring another bad event or time-out
event.
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5.4.12 Watchdog Sequence
Each watchdog sequence begins with a Window 1 followed by a Window 2. The MCU can program the
time periods of Window 1 (tWIN1) and Window 2 (tWIN2) with the WD_WIN1_CFG and WD_WIN2_CFG
registers respectively when the device is in the DIAGNOSTIC state. When the device goes from the
RESET state to the DIAGNOSTIC state, the watchdog sequence begins with the default tWIN1 and tWIN2
time periods.
Use Equation 1 and Equation 2 to calculate the minimum and maximum values for the tWIN1 time period.
Use Equation 3 and Equation 4 to calculate the minimum and maximum values for the tWIN2 time period.
tWIN1_MIN = [(RT[6:0] – 1) × 0.55 × 0.95] ms
where
•
The bits RT[6:0] are located in the WD_WIN1_CFG SPI register.
(1)
tWIN1_MAX = (RT [6:0] × 0.55 × 1.05) ms
where
•
The bits RT[6:0] are located in the WD_WIN1_CFG SPI register.
(2)
tWIN2_MIN = [(RW[4:0] + 1) × 0.55 × 0.95] ms
where
•
The bits RW[4:0] are located in the WD_WIN2_CFG SPI register.
(3)
tWIN2_MAX = [(RW[4:0] + 1) × 0.55 × 1.05] ms
where
•
The bits RW[4:0] are located in the WD_WIN2_CFG SPI register.
(4)
If the MCU stops sending events, or stops feeding the watchdog during the watchdog sequence, the
watchdog considers this lack of response from the MCU a time-out event (no response event). This sets
the TIME_OUT status bit (bit 1 in the WD_STATUS register) and increments the watchdog fail counter.
Immediately following a time-out event the next watchdog sequence is started.
Based on the Window 1 and Window 2 time periods, the watchdog sequence and time-out time periods
are calculated as follows:
tSEQUENCE_MIN = tTIMEOUT_MIN = tWIN1_MIN + tWIN2_MIN
tSEQUENCE_MAX = tTIMEOUT_MAX = tWIN1_MAX + tWIN2_MAX
(5)
(6)
The watchdog uses the internal system clock of the device (±5% accuracy) as a time reference for
creating the 0.55-ms watchdog time step. WINDOW 1 may be up to one 0.55-ms watchdog time step
shorter than programmed as indicated by Equation 1.
NOTE
Because of the uncertainty in the Window 1 and Window 2 time periods, TI recommends
using settings for Window 1 and Window 2 of two or higher. Window 2 could be set as low
as one, assuming Window 1 is set to six or lower. The response from the MCU should be
targeted to the mid point of known timing for Window 2. As Window 1 setting is increased
above six, the device system-clock tolerance (±5%) becomes large compared to a setting of
one in Window 2 not allowing for a known time range for a response in Window 2, so
Window 2 setting must be scaled with Window 1 to allow timing margin.
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5.4.13 MCU to Watchdog Synchronization
To synchronize the MCU with the watchdog sequence, the MCU can write to either the WIN1_CFG or
WIN2_CFG registers to start a new watchdog sequence. After a write access to the WIN1_CFG or
WIN2_CFG register by the MCU (even when these registers are locked or when the device is in the
ACTIVE or the SAFE state), the device immediately starts a new watchdog sequence and increments the
watchdog fail counter. Therefore a write access to the WD_WIN1_CFG or WD_WIN2_CFG register only
takes effect in this new watchdog sequence.
When the MCU is synchronized with the watchdog sequence, a good event from the MCU immediately
starts a new watchdog sequence. In this way, the MCU stays synchronized with the watchdog sequence.
See Figure 6-11 for an example software flowchart of how to synchronize the MCU with the TPS65381-Q1
watchdog.
5.4.14 Trigger Mode (Default Mode)
When the device goes from the RESET state to the DIAGNOSTIC state, the watchdog operates in trigger
mode (default). The first watchdog sequence begins with the default tWIN1 and tWIN2 time periods. The
watchdog receives the triggers from the MCU on the ERROR/WDI pin. A rising edge on the ERROR/WDI
pin, followed by a falling edge on the ERROR/WDI pin after more than the required pulse time,
tWD_pulse(max) (32 μs), is a trigger. Even a waveform with a longer duration high than low is counted as a
trigger if the rising and falling edges meet this requirement.
Window 1, called a CLOSE window, is the first window in the watchdog sequence. A trigger received in
Window 1 is a bad event and ends Window 1, starts a new watchdog sequence and sets
ANSWER_EARLY flag.
Window 2, called an OPEN window, follows Window 1. At a minimum, Window 2 lasts until a trigger is
received. At a maximum, Window 2 lasts until the programmed tWIN2 time. A trigger received in Window 2
(OPEN) is a good event. A new watchdog sequence begins immediately after the watchdog receives a
trigger in Window 2.
If the MCU stops sending triggers during the watchdog sequence, the watchdog considers this lack of
response from the MCU a time-out event (no response event). This sets the TIME_OUT status bit (bit 1 in
the WD_STATUS register) and increments the watchdog fail counter. Immediately following a time-out
event a new watchdog sequence is started.
The TIME_OUT flag can be useful for the MCU software to resynchronize the watchdog trigger pulse
events to the required device watchdog timing. When resynchronizing in this way, the MCU detects the
TIME_OUT flag being set. The TIME_OUT flag being set indicates the time-out event and the start of a
new watchdog sequence. The MCU should send the trigger with timing so the trigger is in Window 2
(OPEN) of this new watchdog sequence.
NOTE
If an active SPI frame (nCS is low) is present when the time-out event occurs,
TIME_OUT flag is not latched (set) in the WD_STATUS register, but the watchdog
counter still increments. Because the TIME_OUT flag is not latched, this impacts
resynchronization ability of the MCU and status monitoring. It is recommended to use
synchronization procedure outlined in section Section 5.4.13.
the
fail
the
the
In trigger mode, the watchdog uses a deglitch filter with the tWD_pulse filter time and an internal system
clock to create the internally generated watchdog pulse (see Figure 5-6 and Figure 5-7).
The rising edge of the trigger on the ERROR/WDI pin must occur at least the tWD_pulse(max) time before the
end of Window 2 (OPEN) to generate a good event.
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The window duration times of Window 1 (CLOSE) and Window 2 (OPEN) are programmed through the
WD_WIN1_CFG and WD_WIN2_CFG registers when the device is in the DIAGNOSTIC state. In trigger
mode, the window duration time are as follows:
tWCW_MIN (Trigger mode) = tWIN1_MIN
where
•
WCW is a watchdog CLOSE window
(7)
tWCW_MAX (Trigger mode) = tWIN1_MAX
where
•
WCW is a watchdog CLOSE window
(8)
tWOW_MIN (Trigger mode) = tWIN2_MIN
where
•
WOW is a watchdog OPEN window
(9)
tWOW_MIN (Trigger mode) = tWIN2_MIN
where
•
WOW is a watchdog OPEN window
(10)
Use Equation 1 and Equation 2 to calculate the minimum and maximum values for the tWIN1 = tWCW time
period. Use Equation 3 and Equation 4 to calculate the minimum and maximum values for the tWIN2 = tWOW
time period.
Writing a new Window 1 or Window 2 time to the WD_WIN1_CFG or WD_WIN2_CFG register
immediately begins a new watchdog sequence and increments the watchdog fail counter. A new watchdog
sequence is started by a write even when WD_WIN1_CFG register and the WD_WIN2_CFG SPI register
are locked because the device is not in DIAGOSTIC state or the SPI command SW_LOCK is blocking a
write update to the register values.
The watchdog trigger event is considered a good-event if received during a Window 2 (OPEN) window,
and is considered a bad-event if received during Window 1 (CLOSE) window. A good-event ends the
current watchdog sequence and starts a new watchdog sequence, therefore the MCU and device
watchdog timing stay synchronized.
A good-event, bad-event, time-out event, power-up event, or power-down event ends the current
watchdog sequence and starts a new watchdog sequence.
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RESET Extension BIST Run
Time (Conf. With
Time
RESEXT)
t = tWIN1
t < tWIN2
t = t WIN1
t < t WIN2
NRES
(Reset to MCU)
Decrement
WD_FAIL_CNT[2:0]
WD_FAIL_CNT[2:0]=4
WD_FAIL_CNT[2:0]=5
Watchdog
Windows
WINDOW 1 (CLOSE)
WINDOW 2 (OPEN)
Decrement
WD_FAIL_CNT[2:0]
WD_FAIL_CNT[2:0]=3
WINDOW 2
(OPEN)
WINDOW 1 (CLOSE)
Start New Watchdog Sequence
WINDOW 1
(CLOSE)
Start New Watchdog Sequence
A
A
t > tWD_pulse
t > tWD_pulse
Trigger on ERROR/WDI Pin
tWD_pulse
tWD_pulse
tWD_pulse
tWD_pulse
Internally Generated Watchdog Pulse
Note: The deglitch time of the WD trigger on ERROR/WDI is tWD_pulse.
tWD_pulse
(min) = 28 µs and tWD_pulse (max) = 32 µs
The rising edge of the external trigger signal must be no later than 32 µs before
WINDOW 2 ends to ensure the deglitched signal occurs within WINDOW 2.
A.
Note: The external trigger signal may start in WINDOW 1, as long as the rising edge of the
internally generated watchdog pulse (derived from the deglitched trigger on ERROR/WDI pin) is in
WINDOW 2.
When a good event is received in Window 2, 1 system clock-cycle (250 ns, typical) later the next watchdog sequence begins. Therefore the actual length of Window 2
depends on when the MCU sends the good event.
Figure 5-6. Example Cases for Good-Events in Trigger Mode
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NRES
(Reset to MCU)
RESET
Extension BIST Run
Time
Time (Conf.
With
RSTEXT)
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t = tWIN1
RESET
Extension
Time
(Conf.
With
RSTEXT)
t = tWIN2
BIST Run
Time
t = t WIN1 or t < t WIN1
WD_FAIL_CNT[2:0]=5
WD_FAIL_CNT[2:0]=5
Watchdog
Windows
WINDOW 1 (CLOSE)
WINDOW 2 (OPEN)
WINDOW 1 (CLOSE)
NRES = LOW When
WD_FAIL_CNT[2:0] = 7+1
and WD_RST_EN = 1B
A
WINDOW 1 (CLOSE)
Start New Watchdog
Sequence
Increment
WD_FAIL_CNT[2:0]
WD_FAIL_CNT[2:0]=6
C
Increment
WD_FAIL_CNT[2:0]
WD_FAIL_CNT[2:0]=6
t > tWD_pulse
Trigger on ERROR/WDI Pin
tWD_pulse
tWD_pulse
Internally Generated Watchdog Pulse
Case No. 1:
Time-Out Event
NRES
(Reset to MCU)
RESET
Extension
Time
(Conf. With
RSTEXT)
BIST
Run
Time
Watchdog
Windows
Case No. 2:
Watchdog Trigger Event
During WINDOW 1 (CLOSE)
NRES = HIGH When
WD_FAIL_CNT[2:0] = 7 AND
WD_RST_EN = 0 or 1B
t = t WIN1 or t < t WIN1
NRES = HIGH When
WD_FAIL_CNT[2:0] = 7 + 1
AND WD_RST_EN = 0B
t = t WIN1
t = t WIN2
t = t WIN1
t = t WIN2
WINDOW 1 (CLOSE)
WINDOW 2 (OPEN)
WINDOW 1 (CLOSE)
WINDOW 2 (OPEN)
WD_FAIL_CNT[2:0]=5
WINDOW 1 (CLOSE)
Start New Watchdog
Sequence
t > tWD_pulse
C
Trigger on ERROR/WDI Pin
tWD_pulse
WINDOW 1 (CLOSE)
Start New Watchdog Sequence
Start New Watchdog Sequence
Increment
WD_FAIL_CNT[2:0]
WD_FAIL_CNT[2:0]=6
t < tWD_pulse
A
Increment
WD_FAIL_CNT[2:0]
WD_FAIL_CNT[2:0]=7
A
WD_FAIL_CNT[2:0] remains at 7
while WD_RST_EN = 0B
WD_FAIL_CNT[2:0]=7
tWD_pulse
Internally Generated Watchdog Pulse
Case No. 2:
Watchdog Trigger Event
During WINDOW1
(CLOSE)
Case No. 3:
Too Short Trigger Signal Causes
Time-Out Event
Case No. 4:
Time-Out Event
Note: The deglitch time of the WD trigger on ERROR/WDI is tWD_pulse.
tWD_pulse (min) = 28 µs and tWD_pulse (max) = 32 µs
Any external trigger signal that his high longer than 32 µs will be deglitched and propagate into the watchdog as the Internally
Generated Watchdog Pulse.
A.
B.
C.
When a time-out event occurs, 1 system clock-cycle (250 ns, typical) later, the next watchdog sequence begins.
WD_RST_EN = 0 per default. To enable a reset from the watchdog once WD_FAIL_CNT[2:0] = 7 +1, WD_RST_EN must be set to 1. The notation WD_FAIL_CNT[2:0]
= 7 +1 means the next (+ 1) bad event or time-out event if WD_FAIL_CNT[2:0] = 7 while WD_RST_EN = 1 will cause a transition to the RESET state. However, when
WD_RST_EN = 0, the WD_FAIL_CNT[2:0] counter does not increment past 7 and the watchdog does not cause a transition to the RESET state.
When a bad event is received in Window 1, 1 system clock-cycle (250 ns, typical) later the next watchdog sequence begins. Therefore the actual length of Window 1
depends on when the MCU sends the bad event.
Figure 5-7. Example Cases for Bad-Event and Time-out Events in Trigger Mode
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5.4.15 Q&A Mode
Setting the WD_CFG bit in the SAFETY_FUNC_REG register to 1 when the device is in the DIAGNOSTIC
state configures the watchdog for Q&A (question and answer) mode. In Q&A mode, the device provides a
question (or TOKEN) for the MCU in the WD_TOKEN_VALUE register. The MCU performs a fixed series
of arithmetic operations on the question to calculate the required 32-bit answer. This answer is split into
four answer bytes or responses. The MCU writes these answer bytes through SPI one byte at a time into
the WD_ANSWER register. The device verifies that the MCU returned the answer bytes within the
specified timing windows, and that the answer bytes are correct.
A good event occurs when the MCU sends the correct answer bytes calculated for the current question
within the correct watchdog window and in the correct order.
A bad event occurs when one of the events that follows occur:
• The MCU sends the correct answer bytes, but not in the correct watchdog window.
• The MCU sends incorrectly calculated answer bytes.
• The MCU returns correct answer bytes in the wrong order (sequence).
If the MCU stops sending answer bytes during the watchdog sequence, the watchdog considers this lack
of response from the MCU a time-out event (no response event). This sets the TIME_OUT status bit (bit 1
in the WD_STATUS register) and increments the watchdog fail counter. Immediately following a time-out
event a new watchdog sequence is started.
The TIME_OUT flag can be useful for the MCU software to resynchronize the watchdog answer timing to
the required device watchdog timing. When resynchronizing in this way, the MCU detects the TIME_OUT
flag being set. The TIME_OUT flag being set indicates the time-out event and the start of a new watchdog
sequence. The MCU should send the answer bytes with timing so they will be in the correct windows of
the new watchdog sequence.
NOTE
If an active SPI frame (nCS is low) is present when the time-out event occurs,
TIME_OUT flag is not latched (set) in the WD_STATUS register, but the watchdog
counter is still incremented. Because the TIME_OUT flag is not latched this impacts
resynchronization ability of the MCU and status monitoring. It is recommended to use
synchronization procedure outlined in section Section 5.4.13.
the
fail
the
the
NOTE
In Q&A mode, each watchdog sequence starts with Window 1 (OPEN) followed by Window 2
(CLOSE). The OPEN and CLOSE references for Q&A mode are reversed with respect to
those of trigger mode, but the order of the Window 1 and Window 2 is the same as are the
registers containing the setting for each window, WD_WIN1_CFG and WD_WIN2_CFG.
5.4.15.1 Watchdog Q&A Related Definitions
The Q&A mode definitions are:
Question (Token) The question (token) is a 4-bit word (see Section 5.4.15.3).
The watchdog provides the question (token) to the MCU when the MCU reads the question
(TOKEN[3:0]) from the WD_TOKEN_VALUE register.
The MCU can request each new question (token) at the start of the watchdog sequence, but
this is not required to calculate the answer. The MCU can also generate the question by
implementing the question generation circuit as shown in Figure 5-9. Nevertheless, the
answer and, therefore the answer bytes, are always based on the question generated inside
the watchdog of the device. So, if the MCU generates a wrong question and gives answer
bytes calculated from a wrong question, the watchdog detects a bad event.
A new question (token) is generated only when a good event occurred in the previous
watchdog sequence causing the token counter (internal counter) to increment and generate
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a new question (token) as shown in figure Figure 5-9.
Answer (Response) The answer (response) is a 32-bit word that is split into four answer bytes or
responses: Answer-3 (WD_TOKEN_RESP_3), Answer-2 (WD_TOKEN_RESP_2), Answer-1
(WD_TOKEN_RESP_1), and Answer-0 (WD_TOKEN_RESP_0).
The watchdog receives an answer byte when the MCU writes to the watchdog answer
register (the WD_ANSW[7:0] bits in the WD_ANSWER register).
For each question, the watchdog requires four correct answer bytes from the MCU in the
correct timing and order (sequence). Answer-3, Answer-2, and Answer-1 can be in Window
1 or Window 2 in the correct order, and Answer-0 must be in Window 2 to be detected as a
good event.
5.4.15.2 Watchdog Sequence in Q&A Mode
The watchdog sequence in Q&A mode ends after the MCU writes the fourth answer byte, Answer-0
(WD_TOKEN_RESP_0), or after a time-out event. A new watchdog sequence starts after the previous
watchdog sequence ends.
The window duration times of Window 1 (OPEN) and Window 2 (CLOSE) are programmed through the
WD_WIN1_CFG and WD_WIN2_CFG registers when the device is in the DIAGNOSTIC state. In Q&A
mode, the window duration time are as follows:
tWOW_MIN (Q&A mode) = tWIN1_MIN
where
•
WOW is a watchdog OPEN window
(11)
tWOW_MAX (Q&A mode) = tWIN1_MAX
where
•
WOW is a watchdog OPEN window
(12)
tWCW_MIN (Q&A mode) = tWIN2_MIN
where
•
WCW is a watchdog CLOSE window
(13)
tWCW_MIN (Q&A mode) = tWIN2_MIN
where
•
WCW is a watchdog CLOSE window
(14)
Use Equation 1 and Equation 2 to calculate the minimum and maximum values for the tWIN1 = tWOW time
period. Use Equation 3 and Equation 4 to calculate the minimum and maximum values for the tWIN2 = tWCW
time period.
Writing a new Window 1 or Window 2 time to the WD_WIN1_CFG or WD_WIN2_CFG register
immediately begins a new watchdog sequence and increments the watchdog fail counter. A new watchdog
sequence is started by a write even when WD_WIN1_CFG register and the WD_WIN2_CFG SPI register
are locked because the device is not in DIAGOSTIC state or the SPI command SW_LOCK is blocking a
write update to the register values.
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WINDOW 1 (OPEN)
WINDOW 2 (CLOSE)
Programmed through WD_WIN1_CFG register
t = tWIN1
Programmed through WD_WIN2_CFG register
t = tWIN2
The first three correct answer bytes (responses) may be scheduled in WINDOW 1 or
WINDOW 2. The first three answer bytes must be in the correct order (sequence):
x
Answer-3 (WD_TOKEN_RESP_3) followed by
x
Answer-2 (WD_TOKEN_RESP_2) followed by
x
Answer-1 (WD_TOKEN_RESP_1)
The fourth answer byte, Answer-0 (WD_TOKEN_RESP_0)
must be provided in WINDOW 2.
After the MCU writes the fourth answer byte (Answer-0) to
the WD_ANSWER register, the watchdog generates the
next question (token) after which next watchdog sequence
begins.
After WINDOW 1 time elapses, WINDOW 2 begins.
The MCU needs to write the answer bytes (responses) to WD_ANSWER register.
Question
SPI
Commands
MCU Reads
Question(1)
Q*
Answer
MCU Provides Answer(2)
3*
2*
1*
0*
NCS pin
1 Internal Clock Cycle (250 ns)
to Generate New Question for (Q&A [n + 1])
Q&A [n]
Q&A [n + 1]
WATCHDOG SEQUENCE
Q* = RD_WD_TOKEN_VALUE
3* = Answer-3 to WR_WD_ANSWER
2* = Answer-2 to WR_WD_ANSWER
1* = Answer-2 to WR_WD_ANSWER
0* = Answer-0 to WR_WD_ANSWER
(1)
(2)
The MCU is not required to read the question (token). The MCU can begin giving the correct answer bytes Answer-3, Answer-2,
Answer-1, anywhere in Window 1 or Window 2. The new question (token) is generated and a new watchdog sequence started within
1 system clock cycle after the final Answer-0 as long as the answer was a good event. A bad event or time-out event causes a new
watchdog sequence to start, however a new question (token) is not generated.
The MCU can put other SPI commands in-between the WR_WD_ANSWER commands (even rerequesting the question). These SPI
commands have no influence on the detection of a good event, as long as the four correct answer bytes are in the correct order, and
the fourth correct answer byte is provided in Window 2.
Figure 5-8. Watchdog Sequence in Q&A Mode
5.4.15.3 Question (Token) Generation
The watchdog uses a 4-bit token counter (TOKEN_CNT[3:0] bits in Figure 5-9), and a 4-bit Markov chain
to generate a 4-bit question (token). The MCU can read this question in the WD_TOKEN_VALUE register,
TOKEN[3:0] bits. The watchdog generates a new question when the token counter increments, which only
occurs when the watchdog detects a good event. The watchdog does not generate a new question when
it detects a bad event or a time-out event. The watchdog does not generate a new question for a
watchdog sequence that starts after the MCU writes to the WD_WIN1_CFG or WD_WIN2_CFG registers.
The token counter provides a clock pulse to the Markov chain when it transitions from 1111b to 0000b.
The question counter and the Markov chain are set to the singular default value of 0000b when the device
completes the LBIST (either a manual LBIST run or the automotive LBIST run initiated on the transition
from the RESET to DIAGNOSTIC state). To leave the singular point, the feedback logic combination is
implemented.
Figure 5-9 shows the logic combination for the question (token) generation. The question is in the
WD_TOKEN_VALUE register, TOKEN[3:0] bits.
The logic combination of the token counter with the WD_ANSW_CNT[1:0] status bits (in the WD_STATUS
register) generates the reference answer bytes as shown in Figure 5-9.
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4-bit LFSR Polynomial Equation1
FDBK[2:1] = 2E¶00:
FDBK[2:1] = 2E¶01:
FDBK[2:1] = 2E¶10 :
FDBK[2:1] = 2E¶11:
y = x4 + x3 + 1 (Default Value)
y = x4 + x2 + 1
y = x3 + x2 + 1
y = x4 + x3 + x2 + 1
Equivalent for Default LFSR Polynomial (Default FDBK value)
Bit 3
0
Bit 2
Q
0
D
Flip Flop
Bit 1
Q
D
0
Flip Flop
Bit 0
Q
D
0
Q
Flip Flop
D
Flip Flop
good event
and
TOKEN_CNT[3:0] = 4'b1111
4-bit SEED Value Loaded when the device goes to the RESET state
( Programmable Through TOKEN_SEED[3:0] )
( Default Value 4'b00001 )
00
01
10
TOKEN[0]
11
Token Counter
(Default = 4'b0000)
Good
Event
INCR + 1
trigger
CNT [0]
TOKEN_ CNT[0]
CNT [1]
TOKEN_ CNT[1]
CNT [2]
TOKEN_ CNT[2]
CNT [3]
TOKEN_ CNT[3]
TOKEN_ CNT[1]
TOKEN_ CNT[3]
TOKEN_ CNT[2]
TOKEN_ CNT[1]
Bit 3
Bit 2
Bit 3
Bit 3
TOKEN_ CNT[3]
TOKEN_ CNT[2]
TOKEN_ CNT[3]
TOKEN_ CNT[3]
Bit 0
Bit 1
Bit 0
Bit 0
TOKEN_ CNT[0]
TOKEN_ CNT[1]
TOKEN_ CNT[0]
TOKEN_ CNT[0]
Bit 2
Bit 0
Bit 1
Bit 2
TOKEN_ CNT[2]
TOKEN_ CNT[0]
TOKEN_ CNT[1]
TOKEN_ CNT[2]
Bit 0
Bit 1
Bit 2
SEED 1
0
0
0
Bit 3
0
1
1
0
0
0
2
0
1
0
0
3
0
0
1
0
4
1
0
0
1
5
1
1
0
0
6
0
1
1
0
7
1
0
1
1
8
0
1
0
1
9
1
0
1
0
10
1
1
0
1
11
1
1
1
0
12
1
1
1
1
13
0
1
1
1
14
0
0
1
1
15
0
0
0
1
00
01
10
11
00
01
TOKEN[1]
10
11
00
01
10
11
00
01
TOKEN[2]
10
Question Order 1 to 15
Bit 1
Bit 3
Bit 2
Bit 1
11
00
01
10
11
Default question order with default TOKEN_SEED[3:0]
and FDBK[3:0] values
00
01
TOKEN[3]
10
11
00
01
10
11
Feedback settings controllable through
FDBK [3:2] setting in
WD_TOKEN_FDBK register
(default value 0x0)
(1)
A value of 0000b is a special seed and equates to 0001b, including the default loading of 0000b during power up.
Figure 5-9. Watchdog Question (Token) Generation
70
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TOKEN [0]
Reference-Answer-x [0]
X = 3, 2, 1, 0
WD_ANSW_CNT [1]
( from WD_STATUS register )
TOKEN [3]
TOKEN [0]
Reference-Answer-x [1]
X = 3, 2, 1, 0
TOKEN [2]
TOKEN [1]
WD_ANSW_CNT [1]
( from WD_STATUS register )
TOKEN [0]
Reference-Answer-x [2]
X = 3, 2, 1, 0
TOKEN [3]
TOKEN [1]
WD_ANSW_CNT [1]
( from WD_STATUS register )
Reference-Answer-x [3]
TOKEN [2]
X = 3, 2, 1, 0
TOKEN [0]
TOKEN [3]
WD_ANSW_CNT [1]
( from WD_STATUS register )
TOKEN [1]
Reference-Answer-x [4]
X = 3, 2, 1, 0
WD_ANSW_CNT [0]
( from WD_STATUS register )
TOKEN [3]
Reference-Answer-x [5]
X = 3, 2, 1, 0
WD_ANSW_CNT [0]
( from WD_STATUS register )
TOKEN [0]
Reference-Answer-x [6]
X = 3, 2, 1, 0
WD_ANSW_CNT [0]
( from WD_STATUS register )
TOKEN [2]
Reference-Answer-x [7]
X = 3, 2, 1, 0
WD_ANSW_CNT [0]
( from WD_STATUS register )
Calculated Answer-x byte
Figure 5-10. Watchdog Answer Calculation
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5.4.15.4 Answer Comparison and Reference Answer
The 2-bit, watchdog-answer counter, WD_ANSW_CNT[1:0], in the WD_STATUS register counts the
number of received answer bytes and controls the generation of the reference Answer-x byte as shown in
Figure 5-10. At the start of each watchdog sequence, the default value of the WD_ANSW_CNT[1:0] is 11b
to indicate that the watchdog expects the MCU to write Answer-3 (WD_RESP_3) in the WD_ANSWER
register.
5.4.15.4.1 Sequence of the 2-bit Watchdog Answer Counter
The sequence of the 2-bit, watchdog answer counter, WD_ANSW[1:0], is as follows for each counter
value:
• WD_ANSW_CNT[1:0] = 11b:
– The watchdog calculates reference Answer-3
– A write access occurs: the MCU writes Answer-3 (WD_TOKEN_RESP_3) byte in the
WD_ANSWER register.
– The watchdog compares the reference Answer-3 with the Answer-3 byte in the WD_ANSWER
register.
– The watchdog decrements the WD_ANSW_CNT[1:0] bits to 10b and updates the ANSWER_ERR
flag bit.
• WD_ANSW_CNT[1:0] = 10b:
– The watchdog calculates reference Answer-2
– A write access occurs: the MCU writes Answer-2 (WD_TOKEN_RESP_2) byte in the
WD_ANSWER register.
– The watchdog compares the reference Answer-2 with the Answer-2 byte in the WD_ANSWER
register.
– The watchdog decrements the WD_ANSW_CNT[1:0] bits to 01b and updates the ANSWER_ERR
flag bit.
• WD_ANSW_CNT[1:0] = 01b:
– The watchdog calculates reference Answer-1
– A write access occurs: the MCU writes Answer-1 (WD_TOKEN_RESP_1) byte in the
WD_ANSWER register.
– The watchdog compares the reference Answer-1 with the Answer-1 byte in the WD_ANSWER
register.
– The watchdog decrements the WD_ANSW_CNT[1:0] bits to 00b and updates the ANSWER_ERR
flag bit.
• WD_ANSW_CNT[1:0] = 00b:
– The watchdog calculates reference Answer-0
– A write access occurs: the MCU writes Answer-0 (WD_TOKEN_RESP_0) byte in the
WD_ANSWER register.
– The watchdog compares the reference Answer-0 with the Answer-0 byte in the WD_ANSWER
register.
– The watchdog updates the ANSWER_ERR flag bit.
– The watchdog starts a new watchdog sequence and sets the WD_ANSW_CNT[1:0] to 11b.
72
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Table 5-11. Set of Questions (Tokens) and Corresponding Answer Bytes Using Default Setting of
WD_TOKEN_FDBK Register
QUESTION (TOKEN)
IN
WD_TOKEN_VALUE
REGISTER
WD ANSWER (TO BE WRITTEN INTO WD_ANSW REGISTER)
Answer-3 (WD_TOKEN_
RESP_3)
Answer-2 (WD_TOKEN_
RESP_2)
Answer-1 (WD_TOKEN_
RESP_1)
Answer-0 (WD_TOKEN_
RESP_0)
TOKEN [3:0]
WD_ANSW_CNT
[1:0] = 11b
WD_ANSW_CNT
[1:0] = 10b
WD_ANSW_CNT
[1:0] = 01b
WD_ANSW_CNT
[1:0] = 00b
0h
FFh
0Fh
F0h
00h
1h
B0h
40h
BFh
4Fh
2h
E9h
19h
E6h
16h
3h
A6h
56h
A9h
59h
4h
75h
85h
7Ah
8Ah
5h
3Ah
CAh
35h
C5h
6h
63h
93h
6Ch
9Ch
7h
2Ch
DCh
23h
D3h
8h
D2h
22h
DDh
2Dh
9h
9Dh
6Dh
92h
62h
Ah
C4h
34h
CBh
3Bh
Bh
8Bh
7Bh
84h
74h
Ch
58h
A8h
57h
A7h
E8h
Dh
17h
E7h
18h
Eh
4Eh
BEh
41h
B1h
Fh
01h
F1h
0Eh
FEh
5.4.15.5 Watchdog Q&A Mode Sequence Events and WD_STATUS Register Updates
The watchdog sequence events are as follows for the different scenarios listed:
• A good event occurs when all answer bytes are correct in value (the ANSWER_ERR bit is cleared to
0) and timing. For such a good event, then the events that follow occur:
– The watchdog fail counter, WD_FAIL_CNT[2:0], decrements by one.
– The token counter increments by one, causing a new question (token) to be generated.
– The SEQ_ERR bit resets.
– The ANSWER_EARLY bit resets.
• A bad event occurs when all answer bytes are correct in value (the ANSWER_ERR bit is cleared to 0)
but not in correct timing. For such a bad event, then the events that follow occur:
– The watchdog fail counter, WD_FAIL_CNT[2:0], increments by one.
– The token counter does not change, thus the question (token) does not change.
– The SEQ_ERR bit is set.
– The ANSWER_EARLY bit is set.
• A bad event occurs when one or more of the answer bytes are not correct in value (the
ANSWER_ERR bit is set to 1) but in correct timing. For such a bad event, then the events that follow
occur:
– The watchdog fail counter, WD_FAIL_CNT[2:0], increments by one.
– The token counter does not change, thus the question (token) does not change.
– The SEQ_ERR bit is set
– The ANSWER_EARLY bit is reset
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•
•
•
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A bad event occurs when one or more of the answer bytes are not correct in value (the
ANSWER_ERR status bit is set to 1) and not in correct timing. For such a bad event, then the events
that follow occur:
– The watchdog fail counter, WD_FAIL_CNT[2:0], increments by one
– The token counter does not change, thus the question (token) does not change.
– The SEQ_ERR bit is set.
– The ANSWER_EARLY bit is set.
In case a time-out event occurs, then the events that follow occur:
– The watchdog fail counter, WD_FAIL_CNT[2:0], increments by one.
– The token counter does not change, thus the question (token) does not change.
– The TIME_OUT bit is set.
In case the MCU writes to registers WD_WIN1_CFG or WD_WIN2_CFG, the events that follow occur:
– The watchdog fail counter, WD_FAIL_CNT[2:0], increments by one.
– The WD_CFG_CHG bit is set.
Table 5-12. WD_STATUS Bits Versus Possible Watchdog Sequence Events
WATCHDOG SEQUENCE EVENTS
All MCU
Answer
Bytes
Correct?
Answer-0 Arrived
During WINDOW
2 (CLOSE)
Yes
Yes
WD_STATUS REGISTER BITS
Answer-0 Arrived
During WINDOW 1
(OPEN)
Time-out Occurred
While Waiting for
Answer?
WINDOW 1 or
WINDOW 2
Duration
Changed?
Yes
No
No
No
0
0
0
0
No
Yes
No
No
0
0
0
1
No
Yes
No
No
No
0
1
0
0
No
No
Yes
No
No
0
1
0
1
Yes (first 3
Answer-x)
No
No
Yes
No
0
0
1
0
No
No
No
Yes
No
0
1
1
0
—
—
—
—
Yes
1
0
0
0
74
Detailed Description
WD_CFG_
CHG
SEQ_ERR
TIME_OUT
ANSWER_
EARLY
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5.4.16 MCU Error Signal Monitor (MCU ESM)
This block monitors the external MCU error conditions signaled from the MCU to the device through the
ERROR/WDI input pin. The MCU ESM is configurable to monitor two different signaling options depending
which functional safety architecture MCU family is being monitored and how the specific MCU family
indicates on the error or fault output pin improper operation. The MCU ESM mode is selected through the
ERROR_CFG bit in the SAFETY_FUNC_CFG register.
In TMS570 mode the ESM detects a low-pulse signal with a programmable low-pulse duration threshold
(see Section 5.4.16.1). This mode is selected when the ERROR_CFG bit is set to 1. In PWM mode the
ESM detecting a PWM signal with a programmable frequency and duty cycle (see Section 5.4.16.2). This
mode is selected when the ERROR_CFG bit is cleared to 0 (default). PWM mode can be used as an
external clock-monitor function.
The MCU ESM is deactivated by default. To activate it, clear the NO_ERROR bit to 0 in the
SAFETY_CHECK_CTRL register.
NOTE
Activating the MCU ESM is only recommended when the watchdog is configured in Q&A
mode, otherwise the ERROR/WDI pin is used both for watchdog trigger input and MCU error
signaling.
The low-signaling duration threshold (for TMS570 mode) or the expected PWM low-pulse duration (for
PWM mode) is set through the SAFETY_ERR_PWM_L register. The expected PWM high-pulse duration
(for PWM mode) is set through the SAFETY_ERR_PWM_H register. A detected MCU signaling error is
indicated when the ERROR_PIN_FAIL bit in the SAFETY_ERR_STAT register is set to 1.
NOTE
An update to a SAFETY_ERR_PWM_x register (only possible in the DIAGNOSTIC state)
has an immediate effect. Therefore, if the MCU writes a new value to the
SAFETY_ERR_PWM_x register which is less than the value of the current pulse-duration
counter value, the MCU ESM immediately detects an error condition on the ERROR/WDI
pin. The pulse duration counter then reinitializes to 0 and sets the ERROR_PIN_FAIL bit to
1.
When the TPS65381-Q1 device is in the DIAGNOSTIC state, the MCU can emulate a signaling error
(emulated fault-injection) for a diagnostic check of the error-signal monitor by checking the status of the
ERROR_PIN_FAIL bit while the NO_ERROR bit is cleard to 0 (MCU ESM enabled) without a transition to
the SAFE state.
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NOTE
To perform an MCU ESM diagnostic check of the pin while in the DIAGNOSTIC state the
following procedure can be used. The ERROR/WDI pin is edge triggered.
1. Clear the ERROR_PIN_FAIL bit by clearing it to 0 in the SAFETY_ERR_STAT register.
2. Verify the ERROR_PIN_FAIL bit is not reset to 1 when the MCU ESM is enabled.
3. Inject a failure on the ERROR/WDI pin specific to the MCU ESM mode of operation.
4. Verify the ERROR_PIN_FAIL bit is set to 1 and the ENDRV pin is low even if the
ENABLE_DRV bit is set to 1.
5. Remove the injected failure.
6. Write 0 to clear the ERROR_PIN_FAIL bit.
7. Confirm the ERROR_PIN_FAIL bit was cleared by reading back the
SAFETY_ERR_STAT register.
8. Confirm the ENDRV pin returned HIGH when the ENABLE_DRV bit is set to 1, assuming
no other conditions exist that block ENDRV from being HIGH (see Figure 5-14).
When the TPS65381-Q1 device is in the ACTIVE state, a detected MCU signaling error causes a
transition to the SAFE state. A dedicated 4-bit error counter, the DEV_ERR_CNT[3:0] bits in the
SAFETY_ERR_STAT register, counts the transitions from the ACTIVE state to the SAFE state.
The module is covered by the logic BIST (LBIST).
5.4.16.1 TMS570 Mode
An error condition is detected when the ERROR/WDI pin remains low longer than the programmed
amount of time set by the SAFETY_ERR_PWM_L register. The programmable time range is 5 µs to 1.28
ms (typical), with 5-µs steps (±5%).
The SAFETY_ERR_PWM_L register must be set to the desired value based on the maximum required
time for the TMS570 MCU to detect an error or fault and to potentially recover from or correct the error or
fault.
The LOW duration time is as follows:
tTMS570_LOW_MIN = (PWML[7:0]) × 5 µs × 0.95
tTMS570_LOW_MAX= (PWML[7:0] + 1) × 5 µs × 1.05
(15)
(16)
Use Equation 15 and Equation 16 to calculate the minimum and maximum values for the LOW duration,
tTMS570_LOW. Figure 5-11 shows the error-detection case scenarios.
NOTE
The SAFETY_ERR_PWM_L register (PWML[7:0]) should be configured with a minimum of 1
(01h) in the register.
The low-pulse monitoring on the ERROR/WDI pin is implemented as follows:
• When the NO_ERROR bit is cleared to 0, every falling edge on the ERROR/WDI pin reinitializes the
low-pulse duration counter to 0 within one system clock-cycle (250 ns ±5%).
• After reinitialization, the low-pulse counter restarts one system clock-cycle (250 ns ±5%).
• The low-pulse duration counter increases every 5 µs (with ±5% accuracy) as long as the ERROR/WDI
pin is low. A rising edge on the ERROR/WDI pin stops the low-pulse duration counter.
• When low-pulse duration counter is equal to the SAFETY_ERR_PWM_L register setting, an error is
detected.
The ERROR_PIN_FAIL bit in the SAFETY_ERR_STAT register is set within one system clock cycle (250
ns ± 5%) after detecting an MCU signaling error. When the device is in the ACTIVE state, a transition to
the SAFE state occurs after one more system clock-cycle.
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MCU ERROR Pin
Reset Request
MCU Issues ERROR Pin Reset Request When
Recovers From Detected Failure or After
Correcting Detected Failure
TMS570
ERROR
Pin Output to
ERROR/WDI
Case No. 1:
Error event occurred, but MCU recovered or
corrected the failure in the allowed time
interval by sending ERROR pin reset request
which returned the input to ERROR/WDI high.
Device
State
ACTIVE
Allowed MCU Response
Time to ERROR Event
TMS570
ERROR
Pin Output to
ERROR/WDI
Case No. 2:
Error event occurred and MCU did NOT recover
and/or was not able to correct the problem within
the allowed time interval
t
0
tTMS570_LOW
SAFETY_PWM_ERR_L
(PWML[7:0])
Low-Pulse Counter
Started
Internal
Error
Event
Trigger
Device
State
ACTIVE
SAFE
Figure 5-11. Error Detection Case Scenarios in TMS570 Mode
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5.4.16.2 PWM Mode
An error condition is detected when one of the following occurs on the ERROR/WDI pin:
• The ERROR/WDI pin high-pulse duration exceeds the threshold value programmed by the PWM_H
register.
• The ERROR/WDI pin low-pulse duration exceeds the threshold value programmed by the PWM_L
register.
The MCU ESM does NOT detect an MCU signaling error on the ERROR/WDI pin if both of the following
occurs:
• The ERROR pin high-pulse duration is less than the threshold value programmed by the PWM_H
register.
• The ERROR pin low-pulse duration is less than the threshold value programmed by the PWM_L
register.
The programmable time range for the expected HIGH and LOW pulse duration is 15 µs to 3.8 ms (typical),
with 15-µs resolution steps (±5%).
The HIGH and LOW pulse duration times are programmed through the SAFETY_ERR_PWM_H and
SAFETY_ERR_PWM_L registers when the device is in the DIAGNOSTIC state. The pulse duration time
are as follows:
tPWM_HIGH_MIN = (PWMH[7:0]) × 15 µs × 0.95
tPWM_HIGH_MAX = (PWMH[7:0] + 1) × 15 µs × 1.05
tPWM_LOW_MIN = (PWML[7:0]) × 15 µs × 0.95
tPWM_LOW_MAX= (PWML[7:0] + 1) × 15 µs × 1.05
(17)
(18)
(19)
(20)
Use Equation 17 and Equation 18 to calculate the minimum and maximum values for the HIGH pulse
duration, tPWM_HIGH. Use Equation 19 and Equation 20 to calculate the minimum and maximum values for
the LOW pulse duration, tPWM_LOW.
NOTE
The SAFETY_ERR_PWM_H (PWMH[7:0]) and SAFETY_ERR_PWM_L (PWML[7:0]) register
should be configured with a minimum of 1 (01h) in the registers.
The monitoring of the high-pulse duration and low-pulse duration is implemented as follows:
LOW pulse monitoring:
• Every falling edge on the ERROR/WDI pin, or setting the NO_ERROR bit from 1 to 0 when the
ERROR/WDI pin is low, reinitializes the low-pulse duration counter to 0 within one system clock-cycle
(250 ns ±5%).
• After reinitialization, the low-pulse counter restarts after one system clock-cycle (250 ns ±5%).
• The low-pulse duration counter increases every 15 µs (±5%) while the ERROR/WDI pin remains low.
• When the low-pulse duration counter is equal to the SAFETY_ERR_PWM_L register setting, an error
is detected.
HIGH pulse monitoring:
• Every rising edge on the ERROR/WDI pin, or setting the NO_ERROR bit from 1 to 0 when the
ERROR/WDI pin is high, reinitializes the high-pulse duration counter to 0 within one system clock-cycle
(250 ns ±5%).
• After reinitialization, the high-pulse counter restarts after one system clock-cycle (250 ns ±5%).
• The high-pulse duration counter increases every 15 µs (with ± 5% accuracy) while the ERROR/WDI
pin remains high.
• When the high-pulse duration counter is equal to the SAFETY_ERR_PWM_H register setting, an error
is detected.
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NOTE
The ERROR/WDI pin is edge triggered, to synchronize the MCU to the MCU ESM module,
while in the DIAGNOSTIC state the MCU should start sending the desired PWM signal. On
the first falling or rising edge the MCU ESM detects the edge and starts the internal timers in
sync with the edge so the MCU and MCU ESM are synchronized. The MCU ESM
resynchronizes to the MCU on every rising and falling edge. While in the DIAGNOSTIC
state, when synchronization has occurred the ERROR_PIN_FAIL flag should be cleared.
The ERROR_PIN_FAIL bit in the SAFETY_ERR_STAT register is set within one system clock cycle (250
ns ±5%) after detecting an MCU signaling error. When the device is in the ACTIVE state, a transition to
the SAFE state occurs after one more system clock-cycle.
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tPWM_HIGH
SAFETY_PWM_ERR_H
(PWMH[7:0])
tPWM_HIGH
SAFETY_PWM_ERR_H
(PWMH[7:0])
tPWM_LOW
SAFETY_PWM_ERR_L (PWML[7:0])
ERROR
Signal from MCU
on ERROR/WDI
Low-Pulse
Counter Stopped,
High-Pulse
Counter started
tHIGH
High-Pulse
Counter Stopped,
Low-Pulse Counter
started
tPWM_LOW
SAFETY_PWM_ERR_L (PWML[7:0])
Low-Pulse
Counter Stopped,
High-Pulse
Counter started
tLOW
High-Pulse
Counter Stopped,
Low-Pulse
Counter started
Low-Pulse Counter
Stopped, High-Pulse
Counter started
tHIGH
tLOW
Internal Error
Event Trigger
Device
State
ACTIVE
Case No. 1:
MCU sends PWM Error signal with correct timing
tPWM_HIGH
SAFETY_PWM_ERR_H
(PWMH[7:0])
ERROR
Signal from MCU
on ERROR/WDI
Low-Pulse Counter
Stopped, High-Pulse
Counter started
tHIGH
Internal Error
Event Trigger
Device
State
ACTIVE
SAFE
Case No. 2:
MCU PWM Error Signal HIGH Pulse Duration Exceeds Time Configured in SAFETY_PWM_ERR_H Register
tPWM_HIGH
SAFETY_PWM_ERR_H
(PWMH[7:0])
tPWM_LOW
SAFETY_PWM_ERR_L (PWML[7:0])
ERROR
Signal from MCU
on ERROR/WDI
High-Pulse Counter
Stopped, Low-Pulse
Counter started
Low-Pulse
Counter Stopped,
High-Pulse
Counter started
tHIGH
tLOW
Internal Error
Event Trigger
Device
State
ACTIVE
SAFE
Case No. 3:
MCU PWM Error Signal LOW Pulse Duration Exceeds Time Configured in SAFETY_PWM_ERR_L Register
Figure 5-12. Error Detection Case Scenarios in PWM Mode
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5.4.17 Device Configuration Register Protection
This function offers a mechanism to help protect safety SPI-mapped registers by means of SPI writeaccess protection and CRC check.
The register access protection includes two distinctive features:
• A register cannot be written after write-access lock protection is set. The lock is cleared by software or
by a power-on reset.
• CRC protection for configuration registers.
A CRC occurs on safety data after a SPI write updates to verify the SPI register contents are correctly
programmed. The CRC controller is a diagnostic module, which performs the CRC to verify the integrity of
the SPI-mapped register space. A signature representing the content of the safety registers is obtained
when the content is read into the CRC controller. The responsibility of the CRC controller is to calculate
the signature for a set of data and then compare the calculated signature value against a predetermined
good-signature value. The predetermined CRC signature value is stored in the SAFETY_CFG_CRC
register. The external MCU uses the SAFETY_CHECK_CTRL register to enable a CRC check and the
SAFETY_STAT_2 register to monitor the status. When enabled, a CRC check on the configuration
registers is performed. In case of a detected signature error, the CFG_CRC_ERR flag is set in the
SAFETY_STAT_2 SPI register. The device state and the ENDRV pin state remain unchanged. In case of
a detected checksum error with the TPS65381-Q1 device in the DIAGNOSTIC state, clearing the
CFG_CRC_EN bit to 0 brings the TPS65381-Q1 device into the SAFE state (the ENDRV pin is pulled
low).
A standard CRC-8 polynomial is used: X8 + X2 + X1 + 1
The CRC monitor test is covered by a logic BIST.
A
•
•
•
•
•
•
•
•
•
•
64-bit string is protected by CRC. The following registers are protected:
SAFETY_FUNC_CFG
DEV_REV
SAFETY_PWD_THR_CFG
SAFETY_ERR_CFG
WD_TOKEN_FDBK
WD_WIN2_CFG
WD_WIN1_CFG
SAFETY_ERR_PWM_L
DEV_CFG2
DEV_CFG1 (only bit number 6)
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Table 5-13 lists the CRC bus structure.
Table 5-13. CRC Bus Structure
REGISTER NAME
64-BIT BUS ORDERING
SAFETY_FUNC_CFG [6:0]
[63:57]
DEV_REV [7:0]
[56:49]
SAFETY_PWD_THR_CFG [3:0]
[48:45]
SAFETY_ERR_CFG [7:0]
[44:37]
WD_TOKEN_FDBK [7:0]
[36:29]
WD_WIN2_CFG [4:0]
[28:24]
WD_WIN1_CFG [6:0]
[23:17]
SAFETY_ERR_PWM_L [7:0]
[16:9]
DEV_CFG2 [7:0]
[8:1]
DEV_CFG1 [6]
0
In the external MCU, the CRC calculation must be performed byte-wise, starting with the lowest byte of
the 64-bit bus ordering value. The most significant bit is first in the bit order. The resulting CRC of one
calculation is the seed value for the next calculation. The initial seed value is FFh. The CRC result of the
eighth byte-wise calculation is the CRC signature value, which must be stored in the SAFETY_CFG_CRC
register (see Figure 5-13).
64-Bit Bus Ordering Value:
63
0
Byte 7
Byte 6
Byte 5
Byte 4
Byte 3
Byte 2
Byte 1
Byte 0
Flip-Flop the Preload Value
(Seed Value)
Byte 0, Byte 1, Byte 2, Byte 3, Byte 4, Byte 5, Byte 6, Byte 7
1 Q
D
1 Q
Flip Flop
Bit 7
D
Flip Flop
Bit 6
1 Q
D
Flip Flop
Bit 5
1 Q
D
1 Q
Flip Flop
Bit 4
D
Flip Flop
Bit 3
1 Q
1Q
D
Flip Flop
Bit 2
D
Flip Flop
Bit 1
1Q
D
Flip Flop
Bit 0
Figure 5-13. CRC Calculation Logic
Table 5-14 lists some CRC calculation examples.
Table 5-14. CRC Calculation Examples
82
64-BIT BUS ORDERING VALUE
CRC-8 RESULT
0000 0000 0000 0000h
DBh
FFFF FFFF FFFF FFFFh
0Ch
0A0A 0505 0A0A 0505h
D4h
0505 0A0A 0505 0A0Ah
17h
A0A0 5050 A0A0 5050h
2Bh
0A23 E000 18FE 7B80h
1Bh
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In case the CRC controller detects a signature error on the configuration registers, care must be used
when performing an EEPROM CRC afterwards. In case of a detected signature error in the configuration
registers, the device reports an EEPROM signature error when the CFG_CRC_EN bit in the
SAFETY_CHECK_CTRL register is cleared to 0 first before performing the EEPROM CRC by setting the
EE_CRC_CHK bit in the SAFETY_BIST_CTRL register to 1, even when the EEPROM bits do not have an
error. Therefore, when performing an EEPROM CRC after a CRC on the configuration registers, the steps
must always occur in the following order:
1. Calculate CRC8 in the MCU and store it in the SAFETY_CFG_CRC register.
2. Set the CFG_CRC_EN bit in the SAFETY_CHECK_CTRL register to 1 to perform a CRC on the
configuration registers.
3. After the SPI command sets the CFG_CRC_EN bit to 1 (for example, after rising edge on NCS), wait
at least 2.1 µs for the configuration register to complete the CRC.
4. Read the results of the configuration register CRC in the SAFETY_STAT_2 register, bit
CFG_CRC_ERR. If continuous CRC on the configuration register must be performed, clear the
CFG_CRC_EN bit in the SAFETY_CHECK_CTRL register to 0 and repeat beginning with Step 1. If the
CRC on the EEPROM registers must be performed, proceed to Step 5.
NOTE
A correct EEPROM CRC afterwards (as described in Step 5) clears this CFG_CRC_ERR bit.
Therefore, TI recommends reading out this CFG_CRC_ERR bit before performing the
EEPROM CRC.
5. Set the EE_CRC_CHK bit in the SAFETY_BIST_CTRL register to 1 to perform the CRC on the
EEPROM registers.
6. After the SPI command sets the EE_CRC_CHK bit to 1 (for example, after rising edge on NCS), wait
at least 811 µs for the EEPROM CRC to finish.
7. Completion of the EERPOM CRC is observed by reading the EE_CRC_CHK bit. When the EEPROM
CRC is complete, this EE_CRC_CHK bit is cleared to 0.
8. Clear the CFG_CRC_EN bit in the SAFETY_CHECK_CTRL register to 0
9. Read the results of the EEPROM CRC in the SAFETY_STAT_2 register, bit EE_CRC_ERR.
10. Go back to Step 1.
NOTE
Returning to Step 1 is not required; returning to Step 2 is also an option.
NOTE
While in the DIAGNOSTIC state, a check can be performed to confirm the CFG_CRC_ERR
bit is set to 1 on a mismatch between the value stored in the SAFETY_CFG_CRC register
and the value that is calculated from the configuration registers covered by the CRC8. If the
CFG_CRC_EN is cleared while the CFG_CRC_ERR bit is set to 1, then the device
transitions to the SAFE state, set the EE_CRC_ERR bit and clear the CFG_CRC_EN bit. To
avoid this transition to the SAFE state, the CFG_CRC_ERR bit must be cleared by running
the EEPROM CRC by setting the EE_CRC_CHK bit. While the EPPROM CRC is running,
the EE_CRC_ERR bit is set. Assuming the EEPROM CRC was good, both the
EE_CRC_ERR and CFG_CRC_ERR bits are cleared. To check if the CFG_CRC_ERR bit is
0 for a matching CRC, the matching CRC value should be stored in the SAFETY_CFG_CRC
register. Then the CFG_CRC_EN bit must be cleared to 0 and set again to 1 which reruns
the CRC on the configuration registers, resulting in the CFG_CRC_ERR bit being 0.
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5.4.18 Enable and Reset Driver Circuit
Figure 5-14 shows the reset and enable circuit.
NRES_ERR
To DIAG_OUT Through DMUX
VDD5_OT
NMASK_VDD5_OT
VDDIO
VDD3/5_UV
~ 4.5 NŸ
VDD1_UV
NMASK_VDD1_UV_OV
NRES
RESET State and Global RESET Conditions
STANDBY State and Global STANDBY Conditions
•1
POST_RUN_RST
IGN_PWRL
Re-cranking on IGN
WD_FAIL_CNT[2:0] = 7 + 1
WD_RST_EN
VDDIO
VBATP_OV
MASK_VBATP_OV
~ 4.5 NŸ
VDD1_OV
VDD5_OV
VDD3/5_OV
ENDRV
NMASK_VDD1_UV_OV
WD_FAIL_CNT[2:0] > 4
SAFE State
ABIST_RUN or LBIST_RUN (ACTIVE State or DIAGNOSTIC State)
STANDBY State
•1
ENABLE_DRV
Bit Type
Status or Monitoring Event or Flag
User Configurable Input Bit
ENDRV_ERR
Figure 5-14. Reset and Enable Circuit
The ENDRV pin features a read-back circuit to compare the external ENDRV level with the internally
applied ENDRV level. This feature detects any possible failure in the ENDRV pullup or pulldown
components. A failure is detected by the MCU through the ENDRV_ERR bit (bit 1 in the
SAFETY_STAT_4 register).
The ENDRV pin is pulled low for the ABIST duration time (approximately 300 µs) when activating the
ABIST function after the ENDRV output is turned on and driven high. This is part of ENDRV diagnostics to
validate all monitoring functions that disable the ENDDRV output and confirm that the ENDRV output is
controllable by using the ENDRV read-back path.
The NRES pin features a readback of the external NRES level. The value is read on the DIAG_OUT pin
and NRES_ERR bit (bit 5 in the SAFETY_STAT_3 register)..
For both the ENDRV pin and the NRES pin, the logic read-back threshold level is typically 400 mV.
Figure 5-15 shows the timing-response diagram for the NRES and ENDRV pins to any VDDx
undervoltage or overvoltage condition.
84
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VDD3/5 or VDD1
Undervoltage
Condition
SLVSBC4G – MAY 2012 – REVISED JUNE 2017
Hysteresis
t1
Required Signal
De-glitch Time
t1 < Signal De-Glitch
Time
t2
t2 > Signal
De-Glitch Time
Required Signal
De-glitch Time
NRES
NRES Extension
Time
After
WD_FAIL_CNT Signal
De-Glitch Time
Required Signal
De-glitch Time
NRES
ENDRV
When WD_FAIL_CNT