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TPS8268180, TPS8268150, TPS8268120, TPS8268105, TPS8268090
SLVSBR0C – OCTOBER 2014 – REVISED JUNE 2015
TPS8268x 1600-mA High-Efficiency MicroSiP™ Step-Down Converter Module
(Profile < 1.0mm)
1 Features
•
•
•
•
•
•
•
1
•
•
•
•
Wide VIN Range From 2.5V to 5.5V
Total Solution Size < 6.7 mm2
Sub 1-mm Profile Solution
±1.5% DC Voltage Accuracy
Up to 1600-mA Load Current
Up to 90% Efficiency
Fixed Output Voltage:
– TPS8268180: 1.80V
– TPS8268150: 1.50V
– TPS8268120: 1.20V
– TPS8268105: 1.05V
– TPS8268090: 0.90V
Low EMI by Spread Spectrum PWM Frequency
Dithering
Best in Class Load and Line Transient Response
Internal Soft Start
Current Overload and Thermal Shutdown
Protection
2 Applications
•
•
•
•
The TPS8268x is based on a high-frequency
synchronous step-down dc-dc converter optimized for
battery-powered portable applications in which high
load currents in a very small solution size and height
are required. The TPS8268x is optimized for high
efficiency and low output voltage ripple and supports
up to 1600-mA load current. With an input voltage
range of 2.5-V to 5.5-V, the device supports
applications powered by Li-Ion batteries as well as 5V and 3.3-V rails.
The TPS8268x operates at a 5.5-MHz switching
frequency with spread spectrum capability. For noisesensitive applications, this provides a lower noise
regulated output, as well as low noise at the input.
The device supports a fixed output voltage, requiring
no external feedback network.
These features, combined with high PSRR and AC
load regulation performance, make this device
suitable to replace a linear regulator to obtain better
power conversion efficiency with the same size.
The TPS8268x is packaged in a compact (2.3mm x
2.9mm) and low profile BGA package suitable for
automated assembly by standard surface mount
equipment.
Device Information(1)
Optical Modules
Cell Phones, Smart-Phones
Solid State Disk Drive Applications
Space constrained applications
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TPS8268180
µSIP
2.30 mm × 2.90 mm
TPS8268150
µSIP
2.30 mm × 2.90 mm
TPS8268120
µSIP
2.30 mm × 2.90 mm
3 Description
TPS8268105
µSIP
2.30 mm × 2.90 mm
The TPS8268x device is a complete DC/DC stepdown power supply optimized for small solution size.
Included in the package are the switching regulator,
inductor and input/output capacitors. Integration of all
passive components enables a tiny solution size of
only 6.7mm2.
.
Typical Application
TPS8268090
µSIP
2.30 mm × 2.90 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Efficiency vs Load Current for TPS8268180
100
TPS8268180SIP
DC/DC Converter
VIN
CI
MODE pin;
tie to VIN
ENABLE
80
SW
70
CO
MODE
EN
FB
GND
VOUT
1.80V / up to 1.6A
Efficiency (%)
VBAT
90
L
60
2.5 V
3V
3.6 V
4.2 V
5V
50
40
30
20
10
0
0.0001
0.001
0.01
Iout (A)
0.1
1
C006
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS8268180, TPS8268150, TPS8268120, TPS8268105, TPS8268090
SLVSBR0C – OCTOBER 2014 – REVISED JUNE 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
7.7
4
4
4
4
5
6
6
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Timing Requirements ................................................
Typical Characteristics ..............................................
Detailed Description ............................................ 10
8.1
8.2
8.3
8.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
10
10
10
11
9
Application and Implementation ........................ 13
9.1 Application Information............................................ 13
9.2 Typical Application ................................................. 13
10 Power Supply Recommendations ..................... 18
11 Layout................................................................... 19
11.1
11.2
11.3
11.4
Layout Guidelines .................................................
Layout Example ....................................................
Surface Mount Information ...................................
Thermal and Reliability Information ......................
19
20
20
21
12 Device and Documentation Support ................. 23
12.1
12.2
12.3
12.4
12.5
Documentation Support .......................................
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
23
23
23
23
23
13 Mechanical, Packaging, and Orderable
Information ........................................................... 24
13.1 Package Summary................................................ 24
13.2 MicroSiP™ DC/DC Module Package Dimensions 24
4 Revision History
Changes from Revision B (June 2015) to Revision C
•
Page
Deleted "Preview" from Device Comparison Table and Electrical Characteristics table for TPS8268120 and
TPS8268180 devices ............................................................................................................................................................ 3
Changes from Revision A (November 2014) to Revision B
Page
•
Added Preview devices TPS8268180 and TPS8268120 specifications and typical application curves to the data
sheet. ..................................................................................................................................................................................... 1
•
Moved timing specs from Electrical Characteristics table to Timing Requirements table ..................................................... 6
Changes from Original (October 2014) to Revision A
•
2
Page
Changed from Product Preview to Production Data .............................................................................................................. 1
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Product Folder Links: TPS8268180 TPS8268150 TPS8268120 TPS8268105 TPS8268090
TPS8268180, TPS8268150, TPS8268120, TPS8268105, TPS8268090
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SLVSBR0C – OCTOBER 2014 – REVISED JUNE 2015
5 Device Comparison Table
(1)
(1)
DEVICE NUMBER
FEATURES
OUTPUT VOLTAGE
Marking
TPS8268180
PWM Spread Spectrum Modulation
Output Capacitor Discharge
1.80V
HK
TPS8268150
PWM Spread Spectrum Modulation
Output Capacitor Discharge
1.50V
YR
TPS8268120
PWM Spread Spectrum Modulation
Output Capacitor Discharge
1.20V
HJ
TPS8268105
PWM Spread Spectrum Modulation
Output Capacitor Discharge
1.05V
YO
TPS8268090
PWM Spread Spectrum Modulation
Output Capacitor Discharge
0.90V
YP
For other voltage options please contact a TI sales representative.
6 Pin Configuration and Functions
SIP-9
(TOP VIEW)
SIP-9
(BOTTOM VIEW)
GND
C1
C2
C3
GND
MODE
MODE
B1
B2
B3
VIN
VOUT
VOUT
A1
A2
A3
VIN
GND
C3
C2
C1
GND
VIN
B3
B2
B1
VIN
A3
A2
A1
EN
EN
Pin Functions
PIN
I/O
DESCRIPTION
A1, A2
O
Power output pin. Apply output load between this pin and GND.
A3, B3
I
Supply voltage connection
EN
B2
I
This is the enable pin of the device. Connecting this pin low forces the device into shutdown
mode. Pulling this pin high enables the device. This pin must not be left floating and must be
terminated.
MODE
B1
I
This pin must be tied to the input supply voltage VIN.
C1, C2, C3
–
Ground pin.
NAME
NO.
VOUT
VIN
GND
Copyright © 2014–2015, Texas Instruments Incorporated
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SLVSBR0C – OCTOBER 2014 – REVISED JUNE 2015
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
VI
MIN
MAX
Voltage at VIN (2)
–0.3
6
Voltage at VOUT (2)
–0.3
3.6
Voltage at EN, MODE (2)
–0.3
VIN + 0.3
Peak output current
UNIT
V
1600
mA
TJ
Operating internal junction temperature range
–40
125
°C
Tstg
Storage temperature range
–55
125
°C
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
7.2 ESD Ratings
V(ESD)
(1)
(2)
Electrostatic discharge
(1) (2)
VALUE
UNIT
Human body model
±2000
V
Charge device model
±500
V
Machine model
±100
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VIN
Input voltage range
IOUT
Peak output current for TPS8268090, TPS8268105,
TPS8268120
VIN ≥ 2.8V
Peak output current for TPS8268150, TPS8268180
VIN ≥ 3.2V
Average output current for TPS8268090,
TPS8268105, TPS8268120
VIN ≥ 2.7V
Average output current for TPS8268150,
TPS8268180
VIN ≥ 2.9V
IOUT
IOUT
Average output current during soft-start
TA
(1)
(2)
(3)
Vout ≤ 0.9 x VOUT,nom
NOM
MAX
UNIT
2.5
5.5
V
0
1600 (1)
mA
0
1200 (1)
mA
0
1000 (2)
mA
Additional effective input capacitance
0
Additional effective output capacitance
0
30 (3)
µF
–40
85
°C
Operating ambient temperature range
µF
See Thermal and Reliability Information for additional details
See Soft Start for additional details
Due to the dc bias effect of ceramic capacitors, the effective capacitance is lower then the nominal value when a voltage is applied.
7.4 Thermal Information
TPS8268x
THERMAL METRIC (1)
SIP
UNIT
9 PINS
RθJA
Junction-to-ambient thermal resistance
62
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
22
°C/W
RθJB
Junction-to-board thermal resistance
25
°C/W
ψJT
Junction-to-top characterization parameter
11
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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Product Folder Links: TPS8268180 TPS8268150 TPS8268120 TPS8268105 TPS8268090
TPS8268180, TPS8268150, TPS8268120, TPS8268105, TPS8268090
www.ti.com
SLVSBR0C – OCTOBER 2014 – REVISED JUNE 2015
Thermal Information (continued)
TPS8268x
THERMAL METRIC (1)
SIP
UNIT
9 PINS
ψJB
Junction-to-board characterization parameter
25
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
°C/W
7.5 Electrical Characteristics
Minimum and maximum values are at VIN = 2.5 V to 5.5 V, EN = VIN and TA = –40°C to 85°C; Circuit of Parameter
Measurement Information section (unless otherwise noted). Typical values are at VIN = 3.6 V, EN = VIN and TA = 25°C
(unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
IQ
Operating quiescent current
IOUT = 0mA
ISD
Shutdown current
EN = low
0.5
5
μA
VIN rising
2.1
2.3
V
VIN falling
1.95
2.25
V
UVLO
Undervoltage lockout threshold
7
mA
ENABLE, MODE
VIH
High-level input voltage
VIL
Low-level input voltage
Ilkg
0.9
V
0.4
V
1.5
μA
Input connected to GND or VIN; TJ = –40°C to
85°C
0.01
Thermal shutdown
Temperature rising
140
Thermal shutdown hysteresis
Temperature falling
10
°C
2100
mA
150
mA
TPS8268180
1.80
V
TPS8268150
1.50
V
TPS8268120
1.20
V
TPS8268105
1.05
V
TPS8268090
0.90
V
Input leakage current
PROTECTION
ILIM
Average output current limit
ISC
Input current limit under short-circuit
condition
VOUT shorted to ground
°C
OUTPUT
VOUT,NOM
Nominal output
voltage
Output voltage
accuracy
TPS8268120,
TPS8268105,
TPS8268090
2.8V ≤ VIN ≤ 5.5V, 0mA ≤ IOUT ≤ 1600 mA
TJ = –40°C to 85°C
TPS8268180,
TPS8268150
3.2V ≤ VIN ≤ 5.5V, 0mA ≤ IOUT ≤ 1600 mA
TJ = –40°C to 85°C
TPS8268120,
TPS8268105,
TPS8268090
2.7V ≤ VIN ≤ 5.5V, 0mA ≤ IOUT ≤ 1200 mA
TJ = –40°C to 125°C
TPS8268180,
TPS8268150
2.9V ≤ VIN ≤ 5.5V, 0mA ≤ IOUT ≤ 1200 mA
TJ = –40°C to 125°C
Line regulation
VIN = 2.5V to 5.5V, IOUT = 200 mA
Load regulation
IOUT = 0mA to 1600 mA
fSW
Nominal oscillator frequency
IOUT = 0mA
RDIS
VOUT discharge resistor
Copyright © 2014–2015, Texas Instruments Incorporated
0.985×VOUT,NOM
VOUT,NOM 1.015×VOUT,NOM
V
0.98×VOUT,NOM
VOUT,NOM 1.025×VOUT,NOM
V
0.2
%/V
–0.85
%/A
5.5
MHz
12
Ω
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SLVSBR0C – OCTOBER 2014 – REVISED JUNE 2015
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7.6 Timing Requirements
Minimum and maximum values are at VIN = 2.5 V to 5.5 V, EN = VIN and TA = –40°C to 85°C; Circuit of Parameter
Measurement Information section (unless otherwise noted). Typical values are at VIN = 3.6 V, EN = VIN and TA = 25°C
(unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
300
μs
OUTPUT
tRAMP
Start-up delay time
Time from EN = high to start switching
120
Ramp time
IOUT = 0mA, Time from start switching until 95%
of nominal output voltage
150
μs
7.7 Typical Characteristics
90
80
Efficiency (%)
70
60
1.81
2.5 V
3V
3.6 V
4.2 V
5V
1.805
VOUT (V)
100
50
40
1.8
1.795
2.9 V
3.0 V
3.6 V
4.2 V
5.0 V
30
1.79
20
10
0
0.0001
0.001
0.01
0.1
1.785
0.0001
1
Iout (A)
C006
VOUT = 1.80V
25°C
1.854
8
1.842
7
0.5 1
2
D024
25°C
6
Frequency (MHz)
VOUT DC (V)
0.2
Figure 2. Output Voltage vs Output Current
1.83
1.818
1.806
1.794
1.782
1 mA
316 mA
501 mA
1A
1.6 A
1.77
1.758
3
3.5
4
4.5
VIN (V)
5
5.5
VOUT = 1.80 V
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5
4
3
3V
3.5 V
4V
5V
2
1
6
0
0.0001
0.001
D023
25°C
Figure 3. Output Voltage vs Input Voltage
6
0.01
0.05
IOUT (A)
VOUT = 1.80 V
Figure 1. Efficiency vs Output Current
1.746
2.5
0.001
0.01
0.1
1
Iout (A)
VOUT = 1.80 V
C014
25°C
Figure 4. Switching Frequency vs Output Current
Copyright © 2014–2015, Texas Instruments Incorporated
Product Folder Links: TPS8268180 TPS8268150 TPS8268120 TPS8268105 TPS8268090
TPS8268180, TPS8268150, TPS8268120, TPS8268105, TPS8268090
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SLVSBR0C – OCTOBER 2014 – REVISED JUNE 2015
Typical Characteristics (continued)
100
80
70
60
1.530
1.515
Vout (V)
Efficiency (%)
1.545
2.5 V
3V
3.6 V
4.2 V
5V
90
50
40
1.500
1.485
30
20
1.470
10
0
0.0001
0.001
0.01
0.1
1.455
0.0001
1
Iout (A)
2.5 V
3V
3.6 V
4.2 V
5V
0.001
VOUT = 1.50V
0.01
0.1
1
Iout (A)
C001
25°C
C002
VOUT = 1.50 V
Figure 5. Efficiency vs Output Current
25°C
Figure 6. Output Voltage vs Output Current
1.545
8
7
1.530
Frequency (MHz)
6
Vout (V)
1.515
1.500
1 mA
316 mA
501 mA
1A
1.58 A
1.485
1.470
1.455
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.01
Efficiency (%)
70
60
0.1
1
Iout (A)
25°C
C019
VOUT = 1.50 V
25°C
Figure 8. Switching Frequency vs Output Current
1.236
2.5 V
3V
3.6 V
4.2 V
5V
2.5 V
3V
3.6 V
4.2 V
5V
1.224
Vout DC (V)
80
3V
3.5 V
4V
5V
1
Figure 7. Output Voltage vs Input Voltage
90
3
C003
VOUT = 1.50 V
100
4
2
5.5
Vin (V)
5
50
40
30
20
1.212
1.200
1.188
1.176
10
0
0.0001
0.001
0.01
0.1
Iout (A)
VOUT = 1.20V
1.164
0.0001
1
25°C
Figure 9. Efficiency vs Output Current
Copyright © 2014–2015, Texas Instruments Incorporated
0.001
0.01
0.1
1
Iout (A)
C005
VOUT = 1.20 V
C008
25°C
Figure 10. Output Voltage vs Output Current
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Typical Characteristics (continued)
8
1.236
7
1.224
Frequency (MHz)
VOUT DC (V)
6
1.212
1.2
1.188
2.5
3
3.5
4
VIN (V)
4.5
5
3
2.5 V
3V
3.5 V
4V
5V
1
0
0.0001
1.164
2
4
2
1 mA
316 mA
501 mA
1A
1.6 A
1.176
5
5.5
0.001
6
0.1
1
Iout (A)
D022
VOUT = 1.20 V
0.01
C013
VOUT = 1.20 V
25°C
25°C
Figure 12. Switching Frequency vs Output Current
Figure 11. Output Voltage vs Input Voltage
1.0815
100
2.5 V
3V
3.3 V
4.2 V
5V
90
1.0710
80
1.0605
60
Vout (V)
Efficiency (%)
70
50
40
2.5 V
3V
3.3 V
4.2 V
5V
30
20
10
0
0.001
0.01
0.1
1.0500
1.0395
1.0290
1.0185
0.0001
1
Iout (A)
0.001
VOUT = 1.05V
25°C
0.01
0.1
1
Iout (A)
C010
C011
VOUT = 1.05 V
25°C
Figure 14. Output Voltage vs Output Current
Figure 13. Efficiency vs Output Current
1.0815
9
8
1.0710
Frequency (MHz)
7
Vout (V)
1.0605
1.0500
1 mA
316 mA
501 mA
1A
1.6 A
1.0395
1.0290
1.0185
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Vin (V)
VOUT = 1.05 V
8
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5
4
3
3V
3.5 V
4V
5V
2
1
5.5
0
0.01
0.1
Iout (A)
C012
25°C
Figure 15. Output Voltage vs Input Voltage
6
VOUT = 1.05 V
1
C018
25°C
Figure 16. Switching Frequency vs Output Current
Copyright © 2014–2015, Texas Instruments Incorporated
Product Folder Links: TPS8268180 TPS8268150 TPS8268120 TPS8268105 TPS8268090
TPS8268180, TPS8268150, TPS8268120, TPS8268105, TPS8268090
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SLVSBR0C – OCTOBER 2014 – REVISED JUNE 2015
Typical Characteristics (continued)
100
80
70
60
0.918
0.909
Vout (V)
Efficiency (%)
0.927
2.5 V
3V
3.6 V
4.2 V
5V
90
50
40
0.900
0.891
30
20
0.882
10
0
0.0001
0.001
0.01
0.1
0.873
0.0001
1
Iout (A)
2.5 V
3V
3.6 V
4.2 V
5V
0.01
0.1
1
Iout (A)
C004
VOUT = 0.9 V
0.001
C007
VIN = 0.9 V
25°C
25°C
Figure 18. Output Voltage vs Output Current
Figure 17. Efficiency vs Output Current
0.927
9
8
0.918
Frequency (MHz)
7
Vout (V)
0.909
0.900
1 mA
316 mA
501 mA
1A
1.6 A
0.891
0.882
0.873
2
2.5
3
3.5
4
4.5
5
Vin (V)
VIN = 0.9 V
Copyright © 2014–2015, Texas Instruments Incorporated
5
4
3
3V
3.5 V
4V
5V
2
1
5.5
0
0.01
0.1
1
Iout (A)
C016
25°C
Figure 19. Output Voltage vs Input Voltage
6
VIN = 0.9 V
C017
25°C
Figure 20. Switching Frequency vs Output Current
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8 Detailed Description
8.1 Overview
The TPS8268x is a complete DC/DC step-down power supply intended for small size and low profile
applications. Included in the package are the switching regulator, inductor and input/output capacitors. It is a
complete Plug & Play Solution, meaning typically no additional components are required to finish the design.
Integration of all required passive components enables a tiny solution size of only 6.7mm2. The converter
operates with fixed frequency pulse width modulation (PWM).
The TPS8268x integrates an input current limit to protect the device against heavy load or short circuits and
features an undervoltage lockout circuit to prevent the device from misoperation at low input voltages.
8.2 Functional Block Diagram
MODE
EN
VIN
CI
DC/DC CONVERTER
Undervoltage
Lockout
Bias Supply
VIN
Bandgap
Soft-Start
V REF = 0.8 V
VIN
Negative Inductor
Current Detect
Timing Generator
VOUT
Thermal
Shutdown
Current Sense
SSFM
R1
-
L
Gate Driver
R2
VOUT
Anti
Shoot-Through
VREF
CO
+
Feedback Divider
GND
8.3 Feature Description
8.3.1 Soft Start
The TPS8268x has an internal soft start circuit that controls the ramp up of the output voltage. Once the
converter is enabled and the input voltage is above the undervoltage lockout threshold VUVLO, the output voltage
ramps up to 95% of its nominal value within tRamp of typ. 150μs. This ensures a controlled ramp up of the output
voltage and limits the input voltage drop when a battery or a high-impedance power source is connected to the
input of the DC/DC converter.
The inrush current during start-up is directly related to the effective capacitance and load present at the output of
the converter.
10
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Feature Description (continued)
During soft start, the current limit is reduced to 2/3 of its nominal value. The maximum load current during soft
start should be less than 1A. Once the internal reference voltage has reached 90% of its target value, the current
limit is set to its nominal target value.
8.3.2 Undervoltage Lockout
The undervoltage lockout circuit prevents the device from misoperation at low input voltages. It prevents the
converter from turning on either MOSFET under undefined conditions. The TPS8268x has a rising UVLO
threshold of 2.1V (typical).
8.3.3 Short-Circuit Protection
The TPS8268x integrates current limit circuitry to protect the device against heavy load or short circuits. When
the average current in the high-side MOSFET reaches its current limit, the high-side MOSFET is turned off and
the low-side MOSFET is turned on ramping down the inductor current.
As soon as the converter detects a short circuit condition, it shuts down. After a delay of approximately 20 µs, the
converter restarts. In case the short circuit condition remains, the converter shuts down again after hitting the
current limit threshold. In case the short circuit condition remains present on the converters output, the converter
periodically re-starts with a small duty cycle and shuts down again, thereby limiting the current drawn from the
input.
8.3.4 Thermal Shutdown
As soon as the junction temperature, TJ, exceeds typically 140°C, the device goes into thermal shutdown. In this
mode, the power stage is turned off. The device continues its operation when the junction temperature falls
below typically 130°C.
8.3.5 Enable
The TPS8268x device starts operation when EN is set high. For proper operation, the EN pin must be terminated
and must not be left floating.
Pulling the EN pin low forces the device into shutdown, with a shutdown current of typically 0.5μA. In this mode,
the internal high-side and low-side MOSFETs are turned off, the internal resistor feedback divider is
disconnected, and the entire internal control circuitry is switched off. The TPS8268x device actively discharges
the output capacitor when it turns off. The integrated discharge resistor has a typical resistance of 12Ω. This
internal discharge transistor is only turned on after the device had been enabled at least once. The required time
to discharge the output capacitor at the output node depends on load current and the effective output
capacitance.
The TPS8268x is designed such that it can start into a pre-biased output, in case the output discharge circuit
was active for too short a time to fully discharge the output capacitor. In this case, the converter starts switching
as soon as the internal reference has approximately reached the equivalent voltage to the output voltage
present. It then ramps the output from that voltage level to its target value.
8.3.6 MODE Pin
This pin must be tied to the input voltage VIN and must not be left floating.
8.4 Device Functional Modes
8.4.1 Spread Spectrum, PWM Frequency Dithering
The goal is to spread out the emitted RF energy over a larger frequency range, so that the resulting EMI is
similar to white noise. The end result is a spectrum that is continuous and lower in peak amplitude, making it
easier to comply with electromagnetic interference (EMI) standards and with power supply ripple requirements in
cellular and non-cellular wireless applications. Radio receivers are typically susceptible to narrowband noise that
is focused on specific frequencies.
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Device Functional Modes (continued)
Switching regulators can be particularly troublesome in applications where electromagnetic interference (EMI) is
a concern. Switching regulators operate on a cycle-by-cycle basis to transfer power to their output. In most
cases, the frequency of operation is either fixed or regulated, based on the output load. This method of
conversion creates large components of noise at the frequency of operation (fundamental) and multiples of the
operating frequency (harmonics).
The spread spectrum architecture varies the switching frequency by around ±10% of the nominal switching
frequency, thereby significantly reducing the peak radiated and conducted noise on both the input and output
supplies. The frequency dithering scheme is modulated with a triangle profile and a modulation frequency fm.
0 dBV
FENV,PEAK
Dfc
Dfc
Non-modulated harmonic
F1
Side-band harmonics
window after modulation
0 dBVref
B = 2 × fm × (1 + mf ) = 2 × ( Dfc + fm )
B = 2 × fm × (1 + mf ) = 2 × ( Dfc + fm )
Bh = 2 × fm × (1 + mf × h )
Figure 21. Spectrum Of A Frequency Modulated
Sin. Wave With Sinusoidal Variation In Time
Figure 22. Spread Bands Of Harmonics In
Modulated Square Signals (1)
The above figures show that after modulation the side-band harmonic is attenuated compared to the nonmodulated harmonic, and the harmonic energy is spread into a certain frequency band. The higher the
modulation index (mf), the larger the attenuation.
mƒ =
δ ´ ƒc
ƒm
(1)
where:
fc is the carrier frequency (5.5 MHz)
fm is the modulating frequency (approx. 0.008*fc)
δ is the modulation ratio (approx 0.1)
d=
D ƒc
ƒc
(2)
The maximum switching frequency fc is limited by the device and finally the parameter modulation ratio (δ),
together with fm , which is the side-band harmonic´s bandwidth around the carrier frequency fc . The bandwidth of
a frequency modulated waveform is approximately given by Carson’s rule and is summarized as:
(
B = 2 ´ ¦m ´ 1 + m ¦
)=2
´
(D ¦c
+ ¦m )
(3)
fm < RBW (resolution bandwidth): The receiver is not able to distinguish individual side-band harmonics, so,
several harmonics are added in the input filter and the measured value is higher than expected in theoretical
calculations.
fm > RBW: The receiver is able to properly measure each individual side-band harmonic separately, so the
measurements match with the theoretical calculations.
(1)
12
Spectrum illustrations and formulae (Figure 21 and Figure 22) copyright IEEE TRANSACTIONS ON ELECTROMAGNETIC
COMPATIBILITY, VOL. 47, NO.3, AUGUST 2005. See References Section for full citation.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The TPS8268x device is a complete DC/DC step-down power supply optimized for small solution size. Included
in the package are the switching regulator, inductor and input/output capacitors. Integration of passive
components enables a tiny solution size of only 6.7mm2.
9.2 Typical Application
TPS8268105SIP
VBAT
DC/DC Converter
2.5V .. 5.5V
C1
+
VIN
SW
GND
FB
L
CI
VOUT
1.05 V / up to 1.6A
CO
EN
MODE
MODE pin;
tie to VIN
Figure 23. Typical Application Schematic
9.2.1 Design Requirements
Figure 23 shows the schematic of the typical application. The following design guidelines provide all information
to operate the device within the recommended operating conditions. An external input capacitor may be required
depending on the source impedance of the battery or pre-regulator used to power TPS8268x. See also Power
Supply Recommendations.
Reference
Description
Manufacturer
IC1
MicroSIP Module TPS8268xSIP
Texas Instruments
C1
Tantalum Capacitor;
T520B157M006ATE025; 150uF/6.3V
Kemet
9.2.2 Detailed Design Procedure
The TPS8268x allows the design of a complete power supply with no additional external components. The input
capacitance can be increased in case the source impedance is large or if there are high load transients expected
at the output. The dc bias effect of the input and output capacitors must be taken into account and the total
capacitance on the output must not exceed the value given in the recommended operating conditions.
9.2.2.1 Input Capacitor Selection
Because the nature of the buck converter has a pulsating input current, a low ESR input capacitor is required.
For most applications, the input capacitor that is integrated into the TPS8268x is sufficient. If the application
exhibits a noisy or erratic switching frequency, experiment with additional input ceramic capacitance to find a
remedy.
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The TPS8268x uses a tiny ceramic input capacitor. When a ceramic capacitor is combined with trace or cable
inductance, such as from a wall adapter, a load step at the output can induce ringing at the VIN pin. This ringing
can couple to the output and be mistaken as loop instability or can even damage the part. In this circumstance,
additional "bulk" capacitance, such as electrolytic or tantalum, should be placed between the input of the
converter and the power source lead to reduce ringing that can occur between the inductance of the power
source leads and CI.
9.2.2.2 Output Capacitor Selection
The advanced fast-response voltage mode control scheme of the TPS8268x allows the use of tiny ceramic
output capacitors. Ceramic capacitors with low ESR values have the lowest output voltage ripple and are
recommended. For most applications, the output capacitor integrated in the TPS8268x is sufficient. An additional
output capacitor may be used for the purpose of improving AC voltage accuracy during large load transients.
To further reduce the voltage drop during load transients, additional external output capacitance up to 30µF can
be added. A low ESR multilayer ceramic capacitor (MLCC) is suitable for most applications. The total effective
output capacitance must remain below 30µF.
As the device operates in PWM mode, the overall output voltage ripple is the sum of the voltage step that is
caused by the output capacitor´s ESL and the ripple current that flows through the output capacitor´s impedance.
Because the damping factor in the output path is directly related to several resistive parameters (e.g. inductor
DCR, power-stage rDS(on), PCB DC resistance, load switches rDS(on) …) that are temperature dependant, the
converter´s small and large signal behavior should be checked over the input voltage range, load current range
and temperature range.
The easiest test is to evaluate, directly at the converter’s output, the following items:
•
•
•
efficiency
load transient response
output voltage ripple
During the recovery time from a load transient, the output voltage can be monitored for settling time, overshoot or
ringing that helps judge the converter’s stability. Without any ringing, the loop typically has more than 45° of
phase margin.
9.2.3 Application Curves
Figure 24. Load Transient Response for TPS8268180
(Vout = 1.80V, Iout = 170mA to 1.47A to 170mA, Vin = 5V)
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Figure 25. Line Transient Response for TPS8268180
(Vout = 1.80V; Iout = 800mA, Vin = 4V to 5V to 4V)
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Figure 26. Startup for TPS8268180
(Vin = 5V, Vout = 1.80V)
Figure 28. Load Transient Response for TPS8268150
(Vout = 1.5V, Iout = 160mA to 1.44A to 160mA, Vin = 5V)
Figure 30. Startup for TPS8268150
(Vin = 5V, Vout = 1.5V)
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Figure 27. Output Voltage Ripple for TPS8268180
(Vin = 5V, Vout = 1.80V, Iout = 900mA)
Figure 29. Line Transient Response for TPS8268150
(Vout = 1.5V, Iout = 800mA, Vin = 4V to 5V to 4V)
Figure 31. Output Voltage Ripple for TPS8268150
(Vin = 5V, Vout = 1.5V, Iout = 900mA)
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Figure 32. Load Transient Response for TPS8268120
(Vout = 1.20V, Iout = 170mA to 1.47A to 170mA, Vin = 5V)
Figure 33. Line Transient Response for TPS8268120
(Vout = 1.20V; Iout = 800mA, Vin = 4V to 5V to 4V)
Figure 34. Startup for TPS8268120
(Vin = 5V, Vout = 1.20V)
Figure 35. Output Voltage Ripple for TPS8268120
(Vin = 5V, Vout = 1.20V, Iout = 900mA)
Figure 36. Load Transient Response for TPS8268105
(Vout = 1.05V, Iout = 160mA to 1.44A to 160mA, Vin = 5V)
Figure 37. Line Transient Response for TPS8268105
(Vout = 1.05V; Iout = 900mA, Vin = 4V to 5V to 4V)
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Figure 38. Startup for TPS8268105
(Vin = 5V, Vout = 1.05V)
Figure 39. Output Voltage Ripple for TPS8268105
(Vin = 5V, Vout = 1.05V, Iout = 900mA)
Figure 40. Load Transient Response for TPS8268090
(Vout = 0.9V, Iout = 170mA to 1.47A to 170mA, Vin = 5V)
Figure 41. Line Transient Response for TPS8268090
(Vout = 0.90V; Iout = 900mA, Vin = 4V to 5V to 4V)
Figure 42. Startup for TPS8268090
(Vin = 5V, Vout = 0.9V)
Figure 43. Output Voltage Ripple for TPS8268090
(Vin = 5V, Vout = 0.9V, Iout = 900mA)
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10 Power Supply Recommendations
The input power supply to the TPS8268x must have a current rating according to the input voltage and output
current of the TPS8268x. TPS8268x provides a fast transient response due to its high switching frequency and
fast control loop. For highly dynamic loads, the device demands high inputs currents within a short time. The
power supply to TPS8268x therefore needs to have a low output impedance in order to keep the input voltage
stable during fast load changes. Make sure the input voltage to TPS8268x at any time is above the minimum
voltage level required to supply the load at the output. See the electrical characteristics for the minimum input
voltage for a given load current for the different output voltage versions. Additional input capacitance needs to be
added if the input voltage dops below the minimum level required.
18
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11 Layout
11.1 Layout Guidelines
TPS8268x allows the design of a power supply with small solution size. In order to properly dissipate the heat,
wide copper traces for the power connections should be used to distribute the heat across the PCB. If possible, a
GND plane should be used as it provides a low impedance connection as well as serves as a heat sink.
In making the pad size for the SiP LGA balls, it is recommended that the layout use a non-solder-mask defined
(NSMD) land. With this method, the solder mask opening is made larger than the desired land area, and the
opening size is defined by the copper pad width. Figure 44 shows the appropriate diameters for a MicroSiPTM
layout.
Copper Trace Width
Solder Pad Width
Solder Mask Opening
Copper Trace Thickness
Solder Mask Thickness
M0200-01
Figure 44. Recommended Land Pattern Image and Dimensions
SOLDER PAD
DEFINITIONS (1) (2) (3) (4)
COPPER PAD
Non-solder-mask
defined (NSMD)
0.30mm
(1)
(2)
(3)
(4)
(5)
(6)
SOLDER MASK
OPENING
0.360mm
(5)
COPPER
THICKNESS
STENCIL (6)
OPENING
STENCIL THICKNESS
1oz max (0.032mm)
0.34mm diameter
0.1mm thick
Circuit traces from non-solder-mask defined PCB lands should be 75μm to 100μm wide in the exposed area inside the solder mask
opening. Wider trace widths reduce device stand off and slightly reduce reliability. However, wider traces may be used to improve the
thermal relief of the device as well as to provide sufficient current handling.
Best reliability results are achieved when the PCB laminate glass transition temperature is above the operating the range of the intended
application.
Recommend solder paste is Type 3 or Type 4.
For a PCB using a Ni/Au surface finish, the gold thickness should be less than 0.5mm to avoid a reduction in thermal fatigue
performance.
Solder mask thickness should be less than 20 μm on top of the copper circuit pattern.
For best solder stencil performance use laser cut stencils with electro polishing. Chemically etched stencils give inferior solder paste
volume control.
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11.2 Layout Example
GND
VOUT
VIN
EN
MODE
Figure 45. Recommended PCB Layout
11.3 Surface Mount Information
The TPS8268x MicroSiP™ DC/DC converter uses an open frame construction that is designed for a fully
automated assembly process and that features a large surface area for pick and place operations. See the "Pick
Area" in the package drawings.
Package height and weight have been kept to a minimum to allow the MicroSiP™ device to be handled similarly
to a 0805 component.
See JEDEC/IPC standard J-STD-20b for reflow recommendations.
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11.4 Thermal and Reliability Information
The TPS8268x´s output current may need to be de-rated if it is required to operate in a high ambient temperature
or deliver a large amount of continuous power. The amount of current de-rating is dependent upon the input
voltage, output power and environmental thermal conditions. Care should especially be taken in applications
where the localized PCB temperature exceeds 65°C.
The TPS8268x die and inductor temperature should be kept lower than the maximum rating of 125°C, so care
should be taken in the circuit layout to ensure good heat sinking. Sufficient cooling should be provided to ensure
reliable operation.
Three basic approaches for enhancing thermal performance are listed below:
• Improve the power dissipation capability of the PCB design.
• Improve the thermal coupling of the component to the PCB.
• Introduce airflow into the system.
To estimate the junction temperature, approximate the power dissipation within the TPS8268x by applying the
typical efficiency stated in this datasheet to the desired output power; or, by taking an actual power
measurement. Then, calculate the internal temperature rise of the TPS8268x above the surface of the printed
circuit board by multiplying the TPS8268x´s power dissipation by its thermal resistance.
The thermal resistance numbers listed in the Thermal Information table are based on modeling the MicroSiP™
package mounted on a high-K test board specified per the JEDEC standard. For increased accuracy and fidelity
to the actual application, it is recommended to run a thermal image analysis of the actual system.
Thermal measurements have been taken on the EVM to give a guideline on what temperature can be expected
when the device is operated in free air at 25°C ambient under a certain load. The temperatures have been
checked at 4 different spots as listed below:
• Spot1: temperature of the input capacitor
• Spot2: temperature of the output capacitor
• Spot3: temperature of the inductor
• Spot4: temperature on the main pcb next to the module
Figure 46. VIN= 5V, VOUT=1.05V, IOUT= 1A
388mW Power Dissipation
Figure 47. VIN= 5V, VOUT= 1.05V, IOUT= 1.2A
466mW Power Dissipation
The TPS8268x contains a thermal shutdown that inhibits switching at high junction temperatures. The activation
threshold of this function, however, is above 125°C to avoid interfering with normal operation. Thus, prolonged or
repetitive operation under a condition in which the thermal shutdown activates necessarily means that the
components internal to the MicroSiP™ package are subjected to high temperatures for prolonged or repetitive
intervals, which may decrease the reliability of the device.
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Thermal and Reliability Information (continued)
MLCC capacitor reliability/lifetime depends on temperature and applied voltage. At higher temperatures, MLCC
capacitors are subject to stronger stress. On the basis of frequently evaluated failure rates determined with
standardized test conditions, the reliability of all MLCC capacitors can be calculated for their actual operating
temperature and voltage.
Failures caused by systematic degradation are described by the Arrhenius model. The most critical parameter
(IR) is the Insulation Resistance (i.e. leakage current). The drop of IR below a lower limit (e.g. 1 MΩ) is used as
the failure criterion. See Figure 48 and Figure 49. Note that the wear-out mechanisms occurring in the MLCC
capacitors are not reversible but cumulative over time.
Input Capacitor Lifetime
vs
Temperature and Voltage
1M
100k
Vin = 3.6 V
Vin = 4.5 V
Vin = 5 V
Vin = 5.5 V
Vout = 2 V
10k
1k
100
1k
100
10
10
1
1
0
20
40
60
80
100
120
Capacitor Case Temperature (C)
Figure 48. Input Capacitor Lifetime
22
Vout = 1.5 V
10k
Lifetime (kHours)
100k
Lifetime (kHours)
Output Capacitor Lifetime
vs
Temperature and Voltage
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140
C020
0
20
40
60
80
100
120
Capacitor Case Temperature (C)
140
C021
Figure 49. Output Capacitor Lifetime
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 References
"EMI Reduction in Switched Power Converters Using Frequency Modulation Techniques", in IEEE
TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, VOL. 4, NO. 3, AUGUST 2005, pp 569-576 by
Josep Balcells, Alfonso Santolaria, Antonio Orlandi, David González, Javier Gago.
12.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
TPS8268180
Click here
Click here
Click here
Click here
Click here
TPS8268150
Click here
Click here
Click here
Click here
Click here
TPS8268120
Click here
Click here
Click here
Click here
Click here
TPS8268105
Click here
Click here
Click here
Click here
Click here
TPS8268090
Click here
Click here
Click here
Click here
Click here
12.3 Trademarks
MicroSiP is a trademark of Texas Instruments.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
13.1 Package Summary
SIP PACKAGE
TOP VIEW
A1
BOTTOM VIEW
YML
D
CC
LSB
C1
C2
C3
B1
B2
B3
A1
A2
A3
E
Code:
•
CC — Customer Code (device/voltage specific)
•
YML — Y: Year, M: Month, L: Lot trace code
•
LSB — L: Lot trace code, S: Site code, B: Board locator
13.2 MicroSiP™ DC/DC Module Package Dimensions
TheTPS8268x is available in an 9-bump ball grid array (BGA) package. The package dimensions are:
• D = 2.30 ±0.05 mm
• E = 2.90 ±0.05 mm
24
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Copyright © 2014–2015, Texas Instruments Incorporated
Product Folder Links: TPS8268180 TPS8268150 TPS8268120 TPS8268105 TPS8268090
PACKAGE OUTLINE
SIP0009B
MicroSiP TM - 1 mm max height
SCALE 5.500
MICRO SYSTEM IN PACKAGE
A
2.95
2.85
B
PIN A1 INDEX
AREA
2.35
2.25
PICK AREA
NOTE 3
1 MAX
C
SEATING PLANE
0.10
0.06
0.05 C
2 TYP
1 TYP
C
0.8
TYP
9X
0.015
C A
0.35
0.25
B
1.6
TYP
B
A
1
2
3
4218356/B 11/2014
MicroSiP is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. For pick and place nozzle recommendation, see product datasheet.
4. Location, size and quantity of each component are for reference only and may vary.
www.ti.com
EXAMPLE BOARD LAYOUT
SIP0009B
MicroSiP TM - 1 mm max height
MICRO SYSTEM IN PACKAGE
SYMM
1
3
2
9X ( 0.3)
SEE DETAILS
A
SYMM
B
(0.8)
TYP
C
(1) TYP
LAND PATTERN EXAMPLE
SCALE:20X
0.05 MIN
( 0.3)
METAL
0.05 MAX
( 0.3)
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER MASK
SOLDER MASK
DEFINED
NON-SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
NOT TO SCALE
4218356/B 11/2014
NOTES: (continued)
5. For more information, see Texas Instruments literature number SBVA017 (www.ti.com/lit/sbva017).
www.ti.com
EXAMPLE STENCIL DESIGN
SIP0009B
MicroSiP TM - 1 mm max height
MICRO SYSTEM IN PACKAGE
SYMM
1
( 0.34) TYP
SEE DETAIL
3
2
A
SYMM
B
(0.8)
TYP
C
(1) TYP
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:20X
( 0.34)
METAL
UNDER PASTE
SOLDER PASTE DETAIL
TYPICAL
4218356/B 11/2014
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
PACKAGE OPTION ADDENDUM
www.ti.com
26-Feb-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS8268090SIPR
ACTIVE
uSiP
SIP
9
3000
RoHS & Green
SNAGCU
Level-2-260C-1 YEAR
-40 to 85
YP
TPS8268090SIPT
ACTIVE
uSiP
SIP
9
250
RoHS & Green
SNAGCU
Level-2-260C-1 YEAR
-40 to 85
YP
TPS8268105SIPR
ACTIVE
uSiP
SIP
9
3000
RoHS & Green
SNAGCU
Level-2-260C-1 YEAR
-40 to 85
YO
TPS8268105SIPT
ACTIVE
uSiP
SIP
9
250
RoHS & Green
SNAGCU
Level-2-260C-1 YEAR
-40 to 85
YO
TPS8268120SIPR
ACTIVE
uSiP
SIP
9
3000
RoHS & Green
SNAGCU
Level-2-260C-1 YEAR
-40 to 85
HJ
TPS8268120SIPT
ACTIVE
uSiP
SIP
9
250
RoHS & Green
SNAGCU
Level-2-260C-1 YEAR
-40 to 85
HJ
TPS8268150SIPR
ACTIVE
uSiP
SIP
9
3000
RoHS & Green
SNAGCU
Level-2-260C-1 YEAR
-40 to 85
YR
TPS8268150SIPT
ACTIVE
uSiP
SIP
9
250
RoHS & Green
SNAGCU
Level-2-260C-1 YEAR
-40 to 85
YR
TPS8268180SIPR
ACTIVE
uSiP
SIP
9
3000
RoHS & Green
SNAGCU
Level-2-260C-1 YEAR
-40 to 85
HK
TPS8268180SIPT
ACTIVE
uSiP
SIP
9
250
RoHS & Green
SNAGCU
Level-2-260C-1 YEAR
-40 to 85
HK
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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