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TPS92830-Q1
SLIS178B – OCTOBER 2017 – REVISED JANUARY 2018
TPS92830-Q1 3-Channel High-Current Linear LED Controller
1 Features
3 Description
•
With the trend of better lighting homogeneity, highcurrent LEDs are often used in automotive front and
rear lamps with lighting diffusers and light-guides.
Meanwhile, in order to meet strict EMC and reliability
requirements, linear LED drivers are popular in
automotive applications. However, it is a challenge to
deliver high current for linear LED drivers with
integrated power transistors. The TPS92830-Q1
device is an advanced automotive-grade high-side
constant-current linear LED controller for delivering
high current using external N-channel MOSFETs. The
device has a full set of features for automotive
applications and is compatible with a wide selection
of N-channel MOSFETs.
1
•
•
•
•
•
•
AEC-Q100 Qualified
– Device Temperature Grade 1: –40°C to 125°C
Ambient Operating Temperature Range
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C4B
Wide Voltage Input Range From 4.5 V to 40 V
3-Channel High-Side Current Driving and Sensing
– Channel-Independent Current Setting
– Channel-Independent PWM Inputs
– PWM Dimming via Both PWM Inputs and
Power Supply
– Optimized Slew Rate for EMC
High-Precision LED Driving
– Precision Current Regulation With External NChannel MOSFET (2.5% Tolerance)
– 20:1 Analog Dimming Profile With Off-Board
Bin Resistor Support
– Precision PWM Generator With Full DutyCycle Mask (2% Tolerance)
– Open-Drain PWM Output for Synchronization
Protection and Diagnostics
– Adjustable Output Current Derating for
External MOSFET Thermal Protection
– Diagnostics for LED-String Open Circuit or
Short Circuit With Auto Recovery
– Diagnostic-Enable With Adjustable Threshold
for Low-Voltage Operation
– Fault Bus up to 15 Devices, Configurable As
Either One-Fails–All-Fail or Only-FailedChannel-Off
– Low Quiescent Current in Fault Mode ( T(TSD)
On or off
All channels
turned off. Pulsed
pullup retry of
faulty channel.
Constant-current
pulldown
t(OPEN_deg)
All channels
turned off. Pulsed
pullup retry of
faulty channel.
Auto recover
All channels
turned off. Faulty
channel pulsed
pullup retry of
faulty channel.
All channels
turned off.
FAULT EXTERNALLY PULLED UP
LED open-circuit
LED short-toGND
VISNx – V SENSEx <
V(OPEN_th_rising)
V SENSEx < V(SG_th_rising)
On
On
LED short-tobattery
V ISNx – V(SENSEx) <
V(OPEN_th_rising)
On or off
Overtemperature
TJ > T(TSD)
On or off
t(OPEN_deg)
Only faulty
channel turned
off. Pulsed pullup
retry of faulty
channel.
t(SG_deg)
Only faulty
channel turned
off. Pulsed pullup
retry of faulty
channel.
Externally pulled
up with internal
constant-current
pulldown
t(OPEN_deg)
Auto recover
Only faulty
channel turned
off. Pulsed pullup
retry of faulty
channel.
All channels
turned off.
FAULT EXTERNALLY PULLED DOWN
All outputs disabled
28
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Table 4. Fault Table With DIAGEN = LOW
FAULT TYPE
DETECTION
MECHANISM
CHANNEL
STATE
DEGLITCH TIME
FAULT BUS
Ignored
Ignored
Ignored
Ignored
FAULT
HANDLING
ROUTINE
FAULT
RECOVERY
Ignored
Ignored
FAULT FLOATING
LED open-circuit
LED short-toGND
V(SENSEx) < V(SG_th_rising)
On
t(SG_deg)
LED short-tobattery
Ignored
Ignored
Ignored
Overtemperature
TJ > T(TSD)
On or off
Constant current
pull down
Ignored
Constant current
pull down
All channels
turned off. Pulsed
Auto recover
pullup retry of
faulty channel.
Ignored
All channels
turned off.
Ignored
Auto recover
FAULT EXTERNALLY PULLED UP
LED open-circuit
Ignored
Ignored
Ignored
LED short-toGND
V(SENSEx) < V(SG_th_rising)
On
t(SG_deg)
LED short-tobattery
Ignored
Ignored
Ignored
Overtemperature
TJ > T(TSD)
On or off
Ignored
Externally pulled
up with internal
constant current
pulled down
Ignored
Externally pulled
up with internal
constant current
pulled down
Ignored
Ignored
Only faulty
channel turned
off. Pulsed pullup
retry of faulty
channel.
Auto recover
Ignored
Ignored
All channels
turned off.
Auto recover
FAULT EXTERNALLY PULLED LOW
All outputs
disabled
All outputs disabled
All outputs
disabled
All outputs
disabled
All outputs
disabled
All outputs
disabled
All outputs
disabled
8.4 Device Functional Modes
8.4.1 Undervoltage Lockout, V(IN) < V(UVLO)
When the device is in undervoltage lockout mode, the TPS92830-Q1 device disables all functions until the supply
rises above the UVLO-rising threshold. The device pulls down the Gx outputs. Other outputs are in the highimpedance state.
8.4.2 Normal Operation (V(IN) ≥ 4.5 V, V(IN) > V(LED) + 0.5 V)
The device drives an LED string in normal operation. A 0.5-V minimal dropout voltage is typically more than
enough to maintain LED current regulation.
8.4.3 Low-Voltage Dropout
When the device drives an LED string in low-dropout mode, even with the MOSFETs fully turned on the output
current may not reach target value. The device reports an LED open-circuit failure if DIAGEN is HIGH.
8.4.4 Fault Mode (Fault Is Detected)
When the device detects an open or shorted LED, the device tries to pull down the FAULT pin with a constant
current. If the fault bus is pulled down, the device switches to fault mode and consumes a fault current of I(FAULT).
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TPS92830-Q1
SLIS178B – OCTOBER 2017 – REVISED JANUARY 2018
www.ti.com
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
In automotive applications, linear LED drivers are preferable for various applications, especially exterior lighting,
for their simplicity and electromagnetic compatibility. This section provides a few examples to show the design
process for different features.
9.2 Typical Applications
9.2.1 Typical Application for Automotive Exterior Lighting With One-Fails–All-Fail
Various functions of exterior lighting may use the following circuit. Here is a typical application circuit for a turn
indicator. A TPS92830-Q1 drives a total of nine LEDs with 3s3p configuration at 300 mA each.
Figure 31. TPS92830-Q1 Typical Application Circuit For Automotive Exterior Lighting
9.2.1.1 Design Requirements
With the wide range of battery voltages in modern automotive systems, it is a common requirement among car
OEMs to turn LEDs off when the battery voltage is below the minimal voltage threshold, for example, 6 V.
When the battery voltage is between 6 V and 9 V, LEDs may not achieve full brightness due to low input voltage.
Although a linear LED driver may drive in low-dropout mode, it is required not to treat the low-dropout mode as
an open-circuit fault and to report a false error.
30
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Typical Applications (continued)
When battery voltage ranges between 9 V and 16 V, the LED driver works in normal mode with the one-fails–allfail feature. If any LED strings fail with an open circuit or short circuit, the TPS92830-Q1 device pulls down the
fault bus. All devices connected to the same fault bus turn off their outputs.
When the battery voltage is above 18 V, the TPS92830-Q1 device is able to detect the overvoltage and derate
the output current to reduce the power dissipation of the MOSFETs and prevent thermal damage.
9.2.1.2 Detailed Design Procedure
Fixed Parameters
• Charge pump flying capacitor C6 = 10 nF
• Charge pump flying capacitor C8 = 10 nF
• R(IREF) = 8 kΩ
• Charge pump storage capacitor C10 = 150 nF
Current Setting
• I(LED) = 300 mA
• R(SNS)= V(CS_REG) / I(LED) = 0.983 Ω
PWM Threshold Setting
• PWM enables when V(IN) > 6 V
• K(RES_PWM) = VIH(PWMx, max) / 6 V
• K(RES_PWM) = R15 / (R15 + R8)
• Set R15 = 20 kΩ, R8 = 76 kΩ
DiagEN Setting (Enables LED-Open Detection When V(IN) > 9 V
• K(RES_DiagEN) = VIH(DIAGEN, max) / 9 V
• K(RES_DiagEn) = R13 / (R6 + R13)
• Set R13 = 10 kΩ, R6 = 62 kΩDiagEN setting
DERATE Setting (Reduces Current Output When V(IN) > 18 V
• K(RES_DERATE) = V(DERATE_FULL, min) / 18 V
• K(RES_DERATE) = R7 / (R7+ R14)
• Set R7 = 10 kΩ, R14 = 95 kΩ
To deliver 300 mA with a single MOSFET package, the designer must consider the maximum thermal-dissipation
condition. The power dissipation of a MOSFET is usually at its peak when input voltage is at 16 V in a fullbrightness condition. Assume the minimal LED forward voltage at 300 mA is 6 V.
P MOSFET
I LED u V IN
VF Diode
VF LED,min
V CS _ REG
300mA u (16 0.7 6 0.295)
2.702W
(10)
MOSFET package and layout design must be considered to dissipate 2.702 W at maximum ambient
temperature, usually 85°C.
The TPS92830 device can support a variety of N-channel MOSFETs in the markets. Adding a capacitor between
the gate and source increases the loop phase margin. The recommended total capacitance at Gx is greater than
4 nF.
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Typical Applications (continued)
9.2.1.3 Application Curves
Ch. 1 = V(IN)
Ch. 4 = I(OUT2)
Ch .2 = V(FAULT)
IN HIGH = 14 V, LOW = 0 V, with reverse
blocking diode
Ch. 3 = V(SENSE2)
Pulse duration = 300 µs, period = 2 ms
Figure 32. BCM PWM Dimming Curve
9.2.2 High-Precision Dual-Brightness PWM Generation
9.2.2.1 Dual-Brightness Application
Automotive lighting often reuses the same LEDs for different functions with different brightness, for example,
daytime running lights (DRL) and position lights, or stop and tail lights. Analog dimming by changing the constant
current may affect LED color temperature. PWM dimming could easily achieve the dimming ratio with the same
color temperature.
The TPS92830-Q1 device provides a precision PWM generator with a synchronization PWMOUT output. Its
integrated high-precision PWM generator ensures homogeneity across different devices.
32
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Typical Applications (continued)
SUPPLY
TPS92830-Q1
TPS92830-Q1
IN
IN
ISP
CPOUT
ISP
CPOUT
RSNS1
ISN1
CP2P
CP2N
CP2P
CP2N
MN1
CP1P
G1
PWM
RPWM
MN1
CP1P
G1
CP1N
FD
RSNS1
ISN1
CP1N
SENSE1
SENSE1
FD
FD
PWM1
PWMOUT
PWMx
IREF
IREF
PWMCHG
PWMCHG
FAULT
FAULT
CPWM
Copyright © 2017, Texas Instruments Incorporated
Figure 33. PWM Generator Master-Slave Configuration
9.2.2.2 Design Requirements
When full duty-cycle (FD) is HIGH, the output is at 100% duty cycle.
When full duty-cycle (FD) is LOW, the output is at 10% duty cycle and 250 Hz.
9.2.2.3 Detailed Design Procedure
PWM Equations
• RPU = 10 kΩ
• CPWM = 105.5 nF
• RPWM = 55.5 kΩ
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Typical Applications (continued)
9.2.2.4 Application Curve
Ch. 1 = V(PWMCHG)
Ch. 4 = I(OUT2_1)
Ch. 2 = V(PWMOUT)
Ch. 3 = I(OUT1_1)
Ch. 1 = V(PWMCHG)
Ch. 4 = I(OUT2_1)
Figure 34. Dual Brightness With Integrated High-Precision
PWM Generator at Full Duty-cycle
Ch. 2 = V(PWMOUT)
Ch. 3 = I(OUT1_1)
Figure 35. Dual Brightness With Integrated High-Precision
PWM Generator at 10% Duty-cycle
9.2.3 Driving High-Current LEDs With Parallel MOSFETs
Thermal performance is one key consideration in automotive exterior driving, especially for a linear LED driver.
Due to large variations of automotive battery voltage, a linear LED driver must accommodate thermal dissipation
with a worst-case scenario, which is high ambient temperature and high battery voltage.
LED driver thermal dissipation performance merely depends on the package and PCB thermal dissipation area.
However, if the thermal dissipation performance of a single MOSFET is not able to support the required LED
string current, multiple MOSFETs in parallel are able to dissipate heat for high-current applications.
When a MOSFET is in the saturation region as a current-control device, its current output strongly depends on its
threshold. MOSFET threshold Vth can vary from one device to another. When MOSFETs are in parallel, even a
small threshold mismatch could lead to imbalance of current distribution.
With an integrated charge pump, the TPS92830-Q1 device provides sufficient headroom even when the supply
voltage is as low as 5 V. Thus adding ballast resistors between the N-channel MOSFET source and the LED
string introduces negative feedback for each parallel MOSFET path to balance the current flows.
Table 5. Thermal Measurement of Parallel MOSFETs
34
WITHOUT CURRENT BALLAST
Resistor
WITH 1-Ω BALLAST RESISTOR
WITH 3-Ω BALLAST RESISTOR
MOSFET1
Temperature (ºC)
105.7
85.3
85.9
MOSFET2
Temperature (ºC)
76.1
82.8
84.2
MOSFET3
Temperature (ºC)
84.8
87.6
85.3
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V(IN)= 16 V, I(Total) = 964 mA, TA= 25 ºC.
SUPPLY
TPS92830-Q1
IN
ISP
RSNSx
ISNx
MN1
MN2
MN3
Gx
FAULT
SENSEx
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 36. Parallel MOSFET Driving
9.2.3.1
Application Curves
Without Ballast Resistors
With 1-W Ballast Resistors
With 3-W Ballast Resistors
Figure 37. Thermal Images of Parallel MOSFETs With Various Ballast Resistors
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10 Layout
10.1 Layout Guidelines
The TPS92830-Q1 device relies on external MOSFETs to dissipate heat for high-current applications. To
effectively dissipate heat on MOSFETs and LEDs, TI recommends to use 0.071-mm-thick (2-oz.) copper PCBs
or metal-based boards. Make the thermal dissipation area with copper as large as possible. Place thermal vias
on the thermal dissipation area to further improve the thermal dissipation capability. The current path starts from
IN through the sense-resistors, MOSFETs, and LEDs to GND. Wide traces are helpful to reduce parasitic
resistance along the current path as shown in the layout example below.
Place capacitors, especially charge pump capacitors, close to the device to make the current path as short as
possible. TI suggests keeping the LED high-current ground path separate from device ground. TI also
recommends kelvin-connection to the connector. The following layout example shows the recommended
guidelines.
10.2 Layout Example
IN
TPS92830-Q1
1
CP1P
ISP
28
2
CP1N
ISN1
27
3
GND
G1
26
4
CP2N
SENSE1
25
5
CP2P
ISN2
24
6
CPOUT
G2
23
7
IN
SENSE2
22
ISN3
21
GND
DIAGEN
8
DIAGEN
9
DERATE
DERATE
G3
20
PWM1
SENSE3
19
PWM1
10
11
PWM2
PWM3
FD
PWM2
PWMOUT
18
12
PWM3
FAULT
17
13
FD
PWMCHG
16
14
ICTRL
IREF
15
Copyright © 2017, Texas Instruments Incorporated
Figure 38. TPS92830-Q1 Example Layout Diagram
36
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11 Device and Documentation Support
11.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
E2E is a trademark of Texas Instruments.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated device. This data is subject to change without notice and without
revision of this document. For browser-based versions of this data sheet, see the left-hand navigation pane.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
TPS92830QPWRQ1
ACTIVE
TSSOP
PW
28
2000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
TPS92830
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of