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TRF3705IRGER

TRF3705IRGER

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    VFQFN24_EP

  • 描述:

    RF Modulator IC 300MHz ~ 4GHz 24-VFQFN Exposed Pad

  • 数据手册
  • 价格&库存
TRF3705IRGER 数据手册
Sample & Buy Product Folder Support & Community Tools & Software Technical Documents TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 TRF3705 300-MHz to 4-GHz Quadrature Modulator 1 Features 3 Description • The TRF3705 is a low-noise direct quadrature modulator, capable of converting complex modulated signals from baseband or IF directly up to RF. The TRF3705 is a high-performance, superior-linearity device that is ideal to up-convert to RF frequencies of 300 MHz (Note: appropriate matching network is required for optimal performance at 300 MHz) through 4 GHz. The modulator is implemented as a double-balanced mixer. 1 • • • • • • • High Linearity: – Output IP3: 30 dBm at 1850 MHz Low Output Noise Floor: –160 dBm/Hz 78-dBc Single-Carrier WCDMA ACPR at –10-dBm Channel Power Unadjusted Carrier Suppression: –40 dBm Unadjusted Sideband Suppression: –45 dBc Single Supply: 3.3-V Operation 1-bit Gain Step Control Fast Power-Up/Power-Down The RF output block consists of a differential-tosingle-ended converter that is capable of driving a single-ended 50-Ω load. The TRF3705 requires a 0.25-V common-mode voltage for optimum linearity performance. The TRF3705 also provides a fast power-down pin that can be used to reduce power dissipation in TDD applications. 2 Applications • • • • • • Cellular Base Station Transmitter CDMA: IS95, UMTS, CDMA2000, TD-SCDMA LTE (Long Term Evolution) TDMA: GSM, EDGE/UWC-136 Multicarrier GSM (MC-GSM) Wireless MAN Wideband Transceivers The TRF3705 is available in an RGE-24 VQFN package. Device Information(1) PART NUMBER TRF3705 PACKAGE VQFN (24) BODY SIZE (NOM) 4.00 mm x 4.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. VCC GND BBIM BBIP GND GND 24 23 22 21 20 19 Block Diagram PD 1 18 VCC GND 2 17 GND LOP 3 16 RFOUT S 0/90 12 GND GND 13 11 6 GND GC 10 GND BBQP 14 9 5 BBQM GND 8 GND GND 15 7 4 GND LOM 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 Absolute Maximum Ratings ..................................... 4 ESD Ratings.............................................................. 4 Recommended Operating Conditions....................... 4 Thermal Information .................................................. 4 Electrical Characteristics: General ............................ 5 Electrical Characteristics........................................... 6 Typical Characteristics: Single-Tone Baseband ..... 10 Typical Characteristics: Two-Tone Baseband ........ 12 Typical Characteristics: Two-Tone Baseband, MidBand Calibration ...................................................... 16 6.10 Typical Characteristics: No Baseband .................. 18 6.11 Typical Characteristics: Two-Tone Baseband ...... 19 7 7.1 7.2 7.3 7.4 8 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 22 22 22 22 Application and Implementation ........................ 23 8.1 Application Information .......................................... 23 8.2 Typical Application .................................................. 23 9 Power Supply Recommendations...................... 29 10 Layout................................................................... 30 10.1 Layout Guidelines ................................................. 30 10.2 Layout Example .................................................... 30 11 Device and Documentation Support ................. 31 11.1 11.2 11.3 11.4 Device Support .................................................... Community Resources.......................................... Trademarks ........................................................... Glossary ................................................................ 31 32 32 32 12 Mechanical, Packaging, and Orderable Information ........................................................... 32 Detailed Description ............................................ 22 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (October 2011) to Revision B Page • Added the ESD table, Detailed Description, Application and Implementation, Device and Documentation Support, Mechanical, Packaging, and Orderable Information............................................................................................................... 1 • Added Note 1 to Figure 65 ................................................................................................................................................... 23 • Changed the X-axis label of Figure 75 From: Frequency (MHz) To: LO Power (dBm) ....................................................... 28 • Changed Figure 77............................................................................................................................................................... 32 Changes from Original (August 2011) to Revision A • 2 Page Changed the device From: Preview To: Production............................................................................................................... 1 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 5 Pin Configuration and Functions VCC GND BBIM BBIP GND GND 24 23 22 21 20 19 RGE Package 24 Pin VQFN Top View PD 1 18 VCC GND 2 17 GND LOP 3 16 RFOUT Thermal Pad GND GND 12 13 GND 6 11 GC GND GND 10 14 BBQP 5 9 GND BBQM GND 8 15 GND 4 7 LOM Pin Functions PIN NO. NAME I/O DESCRIPTION 1 PD I Power-down digital input (high = device off) 2 GND I Ground 3 LOP I Local oscillator input 4 LOM I Local oscillator input 5 GND I Ground 6 GC I Gain control digital input (high = high gain) 7 GND — 8 GND I Ground 9 BBQM I In-quadrature input 10 BBQP I In-quadrature input 11 GND I Ground 12 GND I Ground 13 GND I Ground 14 GND I Ground Ground or leave unconnected 15 GND I Ground 16 RFOUT O RF output 17 GND I Ground 18 VCC I Power supply 19 GND I Ground 20 GND I Ground 21 BBIP I In-phase input 22 BBIM I In-phase input 23 GND I Ground 24 VCC I Power supply Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 3 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings (1) Over operating free-air temperature range (unless otherwise noted). MIN MAX UNIT Supply voltage range (2) –0.3 6 V Digital I/O voltage range –0.3 VCC + 0.5 V Operating virtual junction temperature range, TJ –40 150 °C Operating ambient temperature range, TA –40 85 °C Storage temperature range, Tstg –65 150 °C (1) (2) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to network ground terminal. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±4000 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±250 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. . JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions Over operating free-air temperature range (unless otherwise noted). VCC Power-supply voltage MIN NOM MAX 3.15 3.3 3.6 UNIT V 6.4 Thermal Information TRF3705 THERMAL METRIC (1) RGE (VQFN) UNIT 24 PINS RθJA Junction-to-ambient thermal resistance 38.4 °C/W RθJC(top) Junction-to-case (top) thermal resistance 42.5 °C/W RθJB Junction-to-board thermal resistance 16.6 °C/W ψJT Junction-to-top characterization parameter 0.9 °C/W ψJB Junction-to-board characterization parameter 16.6 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 6.6 °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 6.5 Electrical Characteristics: General Over recommended operating conditions; at power supply = 3.3 V and TA = +25°C, unless otherwise noted. PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT DC PARAMETERS ICC TA = +25°C, device on (PD = low) 306 mA TA = +25°C, device off (PD = high) 35 μA LO low frequency 300 MHz LO high frequency 4000 Total supply current LO INPUT fLO LO input power –10 MHz 0 +15 dBm 0.5 V BASEBAND INPUTS VCM I and Q input dc common-mode voltage 0.25 BW 1-dB input frequency bandwidth 1000 ZI Input impedance Resistance MHz 8 kΩ Parallel capacitance 4.6 pF Turn on time PD = low to 90% final output power 0.2 μs Turn off time PD = high to initial output power –30 dB 0.2 μs POWER ON/OFF DIGITAL INTERFACE VIH PD high-level input voltage VIL PD low-level input voltage 2 V 0.8 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 V 5 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com 6.6 Electrical Characteristics Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm, singleended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching circuit, unless otherwise noted. PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT fLO = 400 MHz G POUT P1dB IP3 Voltage gain Output power Output compression point Output IP3 IP2 Output IP2 SBS Unadjusted sideband suppression Output RMS voltage over input I (or Q) RMS voltage, GC set low –4.7 dB Output RMS voltage over input I (or Q) RMS voltage, GC set high –1.9 dB GC set low –0.7 dBm GC set high 2.1 dBm GC set low 8.5 dBm GC set high 9.1 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 26 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 25.4 dBm Measured at fLO + (fBB1± fBB2), GC set low 60.2 dBm Measured at fLO + (fBB1± fBB2), GC set high 61.9 dBm –57.4 dBc –51.6 dBm Measured at 2 x LO –50 dBm Measured at 3 x LO –49 Measured at LO frequency CF Unadjusted carrier feedthrough –166.7 dBm Output noise floor DC only to BB inputs; 10-MHz offset from LO dBm/Hz HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –67 dBc HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –64 dBc Output RMS voltage over input I (or Q) RMS voltage, GC set low 0.2 dB Output RMS voltage over input I (or Q) RMS voltage, GC set high 3.0 dB GC set low 4.2 dBm 7 dBm GC set low 13.3 dBm GC set high 13.9 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 31.5 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 30.8 dBm Measured at fLO + (fBB1± fBB2), GC set low 73.6 dBm Measured at fLO + (fBB1± fBB2), GC set high 80.5 dBm fLO = 750 MHz G POUT P1dB IP3 Voltage gain Output power Output compression point Output IP3 IP2 Output IP2 SBS Unadjusted sideband suppression GC set high –45.2 dBc –45.7 dBm Measured at 2 x LO –46 dBm Measured at 3 x LO –53.5 dBm –159.9 dBm/Hz Measured at LO frequency CF Unadjusted carrier feedthrough Output noise floor DC only to BB inputs; 10-MHz offset from LO HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –70 dBc HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –66 dBc 6 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 Electrical Characteristics (continued) Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm, singleended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching circuit, unless otherwise noted. PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT fLO = 900 MHz G POUT P1dB IP3 Voltage gain Output power Output compression point Output IP3 IP2 Output IP2 SBS Unadjusted sideband suppression Output RMS voltage over input I (or Q) RMS voltage, GC set low 0.3 dB Output RMS voltage over input I (or Q) RMS voltage, GC set high 3.1 dB GC set low 4.3 dBm GC set high 7.1 dBm GC set low 13.2 dBm GC set high 13.7 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 31.7 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 30.9 dBm Measured at fLO + (fBB1± fBB2), GC set low 71.5 dBm Measured at fLO + (fBB1± fBB2), GC set high 75.3 dBm –43.8 dBc –48.5 dBm Measured at 2 x LO –53 dBm Measured at 3 x LO –50 Measured at LO frequency CF Unadjusted carrier feedthrough –157.9 dBm Output noise floor DC only to BB inputs; 10-MHz offset from LO dBm/Hz HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –80 dBc HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –65 dBc Output RMS voltage over input I (or Q) RMS voltage, GC set low –0.1 dB Output RMS voltage over input I (or Q) RMS voltage, GC set high 2.5 dB GC set low 3.9 dBm GC set high 6.5 dBm GC set low 13.2 dBm GC set high 13.6 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 32.1 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 30.3 dBm Measured at fLO + (fBB1± fBB2), GC set low 60.8 dBm 62 dBm fLO = 1840 MHz G POUT P1dB IP3 Voltage gain Output power Output compression point Output IP3 IP2 Output IP2 SBS Unadjusted sideband suppression Measured at fLO + (fBB1± fBB2), GC set high –43.4 dBc –42.4 dBm Measured at 2 x LO –41 dBm Measured at 3 x LO –53 Measured at LO frequency CF Unadjusted carrier feedthrough –158.8 dBm Output noise floor DC only to BB inputs; 10-MHz offset from LO dBm/Hz HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –69 dBc HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –80 dBc Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 7 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com Electrical Characteristics (continued) Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm, singleended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching circuit, unless otherwise noted. PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT fLO = 2140 MHz G POUT P1dB IP3 Voltage gain Output power Output compression point Output IP3 IP2 Output IP2 SBS Unadjusted sideband suppression Output RMS voltage over input I (or Q) RMS voltage, GC set low 0.1 dB Output RMS voltage over input I (or Q) RMS voltage, GC set high 2.9 dB GC set low 4.1 dBm GC set high 6.9 dBm GC set low 13.1 dBm GC set high 13.5 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 28.6 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 27.6 dBm Measured at fLO + (fBB1± fBB2), GC set low 65.5 dBm Measured at fLO + (fBB1± fBB2), GC set high 68.2 dBm –45.6 dBc –39.3 dBm Measured at 2 x LO –37 dBm Measured at 3 x LO –46 Measured at LO frequency CF Unadjusted carrier feedthrough –160.0 dBm Output noise floor DC only to BB inputs; 10-MHz offset from LO dBm/Hz HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –61 dBc HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –60 dBc Output RMS voltage over input I (or Q) RMS voltage, GC set low –0.8 dB Output RMS voltage over input I (or Q) RMS voltage, GC set high 2 dB fLO = 2600 MHz G POUT P1dB IP3 Voltage gain Output power Output compression point Output IP3 IP2 Output IP2 SBS Unadjusted sideband suppression GC set low 3.2 dBm GC set high 5.6 dBm GC set low 12.5 dBm GC set high 12.8 dBm 28 dBm FfBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 27.2 dBm Measured at fLO + (fBB1± fBB2), GC set low 67.9 dBm Measured at fLO + (fBB1± fBB2), GC set high 66.4 dBm –52.9 dBm –37.8 dBm Measured at 2 x LO –41 dBm Measured at 3 x LO –42 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low Measured at LO frequency CF Unadjusted carrier feedthrough DC only to BB inputs; 10-MHz offset from LO HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –67 dBc HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –59 dBc 8 Submit Documentation Feedback –160.6 dBm Output noise floor dBm/Hz Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 Electrical Characteristics (continued) Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm, singleended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching circuit, unless otherwise noted. PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT fLO = 3500 MHz G POUT P1dB IP3 Voltage gain Output power Output compression point Output IP3 IP2 Output IP2 SBS Unadjusted sideband suppression Output RMS voltage over input I (or Q) RMS voltage, GC set low –1 dB Output RMS voltage over input I (or Q) RMS voltage, GC set high 1.8 dB GC set low 3 dBm GC set high 5.8 dBm GC set low 12.1 dBm GC set high 12.3 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 23.8 dBm fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 25.3 dBm Measured at fLO + (fBB1± fBB2), GC set low 47.8 dBm Measured at fLO + (fBB1± fBB2), GC set high 48.6 dBm –45.2 dBm –31.6 dBm Measured at 2 x LO –30 dBm Measured at 3 x LO –53 Measured at LO frequency CF Unadjusted carrier feedthrough –160.6 dBm Output noise floor DC only to BB inputs; 10-MHz offset from LO dBm/Hz HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –54 dBc HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –50 dBc Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 9 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com 6.7 Typical Characteristics: Single-Tone Baseband 10 9 8 7 6 5 4 3 2 1 0 −1 −2 TA = −40°C TA = 25°C TA = 85°C Output Power (dBm) Output Power (dBm) VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 5.5 MHz; baseband I/Q amplitude = 1VPP differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 LO Power = −5 dBm LO Power = 0 dBm LO Power = 5 dBm 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G003 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G005 Figure 4. Output Power vs LO Frequency (fLO) and Gain Select Setting 15 VCM = 0.5 V TA = −40°C TA = 25°C TA = 85°C LO Frequency = 2140 MHz 10 Output Power (dBm) Output Power (dBm) 1000 Gain Control = Off Gain Control = On G004 5 0 −5 −10 −15 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 −20 0.01 G066 Figure 5. Output Power vs LO Frequency (fLO) and Temperature at VCM = 0.5 V 10 500 10 9 8 7 6 5 4 3 2 1 0 −1 −2 Figure 3. Output Power vs LO Frequency (fLO) Over LO Drive Level 10 9 8 7 6 5 4 3 2 1 0 −1 −2 0 Figure 2. Output Power vs LO Frequency (fLO) and Supply Voltage Output Power (dBm) Output Power (dBm) −1 −2 2 1 0 −1 −2 VCC = 3.15 V VCC = 3.30 V VCC = 3.45 V G002 Figure 1. Output Power vs LO Frequency (fLO) and Temperature 10 9 8 7 6 5 4 3 2 1 0 10 9 8 7 6 5 4 3 0.1 1 Baseband Voltage Single−Ended (Vpp) 10 G001 Figure 6. Output Power vs Baseband Voltage at 2140 MHz Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 Typical Characteristics: Single-Tone Baseband (continued) 17 16 15 14 13 12 11 10 9 8 7 6 5 TA = −40°C TA = 25°C TA = 85°C P1dB (dBm) P1dB (dBm) VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 5.5 MHz; baseband I/Q amplitude = 1VPP differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 LO Power = −5 dBm LO Power = 0 dBm LO Power = 5 dBm 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 P1dB (dBm) 500 1000 500 1000 3000 3500 4000 G007 6 5 Gain Control = Off Gain Control = On 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G009 Figure 10. P1dB vs LO Frequency (fLO) and Gain Select Setting VCM = 0.5 V 0 1500 2000 2500 Frequency (MHz) 17 16 15 14 13 12 11 10 9 8 7 G008 Figure 9. P1dB vs LO Frequency (fLO) and LO Drive Level 17 16 15 14 13 12 11 10 9 8 7 6 5 0 Figure 8. P1dB vs LO Frequency (fLO) and Supply Voltage P1dB (dBm) P1dB (dBm) 6 5 9 8 7 6 5 VCC = 3.15 V VCC = 3.30 V VCC = 3.45 V G006 Figure 7. P1dB vs LO Frequency (fLO) and Temperature 17 16 15 14 13 12 11 10 9 8 7 17 16 15 14 13 12 11 10 TA = −40°C TA = 25°C TA = 85°C 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G010 Figure 11. P1dB vs LO Frequency (fLO) and Temperature AT VCM = 0.5 V Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 11 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com 6.8 Typical Characteristics: Two-Tone Baseband 36 34 32 30 28 26 24 22 20 18 16 14 12 10 TA = −40°C TA = 25°C TA = 85°C OIP3 (dBm) OIP3 (dBm) VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 OIP3 (dBm) OIP3 (dBm) 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 500 1000 TA = −40°C TA = 25°C TA = 85°C 1500 2000 2500 Frequency (MHz) 3000 3500 4000 36 34 32 30 28 26 24 22 20 18 16 14 12 10 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G012 Gain Control = Off Gain Control = On 0 105 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G015 TA = −40°C TA = 25°C TA = 85°C 0 G014 Figure 16. OIP3 vs LO Frequency (fLO) and Temperature AT VCM = 0.5 V 12 1000 Figure 15. OIP3 vs LO Frequency (fLO) And Gain Select Setting OIP2 (dBm) OIP3 (dBm) VCM = 0.5 V 0 500 G013 Figure 14. OIP3 vs LO Frequency (fLO) and LO Drive Level 36 34 32 30 28 26 24 22 20 18 16 14 12 10 0 Figure 13. OIP3 vs LO FRequency (fLO) anD Supply Voltage LO Power = −5 dBm LO Power = 0 dBm LO Power = 5 dBm 0 VCC = 3.15 V VCC = 3.30 V VCC = 3.45 V G011 Figure 12. OIP3 vs LO Frequency (fLO) and Temperature 36 34 32 30 28 26 24 22 20 18 16 14 12 10 36 34 32 30 28 26 24 22 20 18 16 14 12 10 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G016 Figure 17. OIP2 vs LO Frequency (fLO) and Temperature Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 Typical Characteristics: Two-Tone Baseband (continued) 105 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 VCC = 3.15 V VCC = 3.30 V VCC = 3.45 V OIP2 (dBm) OIP2 (dBm) VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 OIP2 (dBm) OIP2 (dBm) 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 500 1000 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 105 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 3000 3500 4000 G018 VCM = 0.5 V 0 0 −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 500 1000 TA = −40°C TA = 25°C TA = 85°C 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G019 VCC = 3.15 V VCC = 3.30 V VCC = 3.45 V 0 G021 Figure 22. Unadjusted Carrier Feedthrough vs LO Frequency (fLO) and Temperature 1500 2000 2500 Frequency (MHz) Figure 21. OIP2 vs LO Frequency (fLO) and Temperature AT VCM = 0.5 V Unadjusted Carrier Feedthrough (dBm) Unadjusted Carrier Feedthrough (dBm) TA = −40°C TA = 25°C TA = 85°C 0 500 G020 Figure 20. OIP2 vs LO Frequency (fLO) and Gain Select Setting 0 −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 0 Figure 19. OIP2 vs LO Frequency (fLO) and LO Drive Level Gain Control = Off Gain Control = On 0 LO Power = −5 dBm LO Power = 0 dBm LO Power = 5 dBm G017 Figure 18. OIP2 vs LO Frequency (fLO) and Supply Voltage 105 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 105 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G022 Figure 23. Unadjusted Carrier Feedthrough vs LO Frequency (fLO) and Supply Voltage Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 13 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com Typical Characteristics: Two-Tone Baseband (continued) 0 −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 Unadjusted Carrier Feedthrough (dBm) Unadjusted Carrier Feedthrough (dBm) VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. LO Power = −5 dBm LO Power = 0 dBm LO Power = 5 dBm 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 0 500 1000 TA = −40°C TA = 25°C TA = 85°C 1500 2000 2500 Frequency (MHz) 3000 3500 Adjusted Carrier Feedthrough (dBm) Unadjusted Carrier Feedthrough (dBm) 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G025 4000 500 1000 1500 2000 2500 Frequency (MHz) −10 3000 3500 TA = −40°C TA = 25°C TA = 85°C −20 −30 −40 −50 −60 −70 −80 −90 0 500 1000 G024 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G060 Figure 27. Carrier Feedthrough vs LO Frequency (fLO) and Temperature After Nulling at 25°C; Multiple Devices TA = −40°C TA = 25°C TA = 85°C 0 Adjusted at TA = 25°C Device Count = 10 0 −100 Unadjusted Sideband Suppression (dBc) Unadjusted Sideband Suppression (dBc) 500 10 VCM = 0.5 V 4000 0 −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 VCC = 3.15 V VCC = 3.30 V VCC = 3.45 V 0 G026 Figure 28. Unadjusted Sideband Suppression vs LO Frequency (fLO) and Temperature 14 0 Figure 25. Unadjusted Carrier Feedthrough vs LO Frequency (fLO) and Gain Select Setting Figure 26. Unadjusted Carrier Feedthrough vs LO Frequency (fLO) and Temperature at VCM = 0.5 V 0 −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 Gain Control = Off Gain Control = On G023 Figure 24. Unadjusted Carrier Feedthrough vs LO Frequency (fLO) and LO Drive Level 0 −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 0 −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G027 Figure 29. Unadjusted Sideband Suppression vs LO Frequency (fLO) and Supply Voltage Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 Typical Characteristics: Two-Tone Baseband (continued) 0 −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 Unadjusted Sideband Suppression (dBc) Unadjusted Sideband Suppression (dBc) VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. LO Power = −5 dBm LO Power = 0 dBm LO Power = 5 dBm 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 Unadjusted Sideband Suppression (dBc) Gain Control = Off Gain Control = On 0 500 1000 G028 Figure 30. Unadjusted Sideband Suppression vs LO Frequency (fLO) and LO Drive Level 0 −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 0 −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 500 1000 3000 3500 4000 G030 Figure 31. Unadjusted Sideband Suppression vs LO Frequency (fLO) and Gain Select Setting VCM = 0.5 V 0 1500 2000 2500 Frequency (MHz) TA = −40°C TA = 25°C TA = 85°C 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G029 Figure 32. Unadjusted sideband Suppression vs LO Frequency (fLO) and Temperature at VCM = 0.5 V Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 15 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com 6.9 Typical Characteristics: Two-Tone Baseband, Mid-Band Calibration VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. Single point adjustment mid-band. −20 −10 Adjusted at 748MHz − TA = 25°C TA = −40°C TA = 25°C TA = 85°C −30 Adjusted Carrier Feedthrough (dBm) Adjusted Carrier Feedthrough (dBm) −10 −40 −50 −60 −70 −80 −90 −100 680 700 720 740 760 780 Frequency (MHz) 800 −50 −60 −70 −80 −90 890 910 930 950 970 Frequency (MHz) 990 1010 G037 Figure 34. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (GSM900 Band) −30 Adjusted Carrier Feedthrough (dBm) Adjusted Carrier Feedthrough (dBm) TA = −40°C TA = 25°C TA = 85°C −40 −50 −60 −70 −80 −90 1900 1920 1940 1960 1980 Frequency (MHz) 2000 2020 −20 Adjusted at 2140MHz − TA = 25°C TA = −40°C TA = 25°C TA = 85°C −30 −40 −50 −60 −70 −80 −90 −100 2060 2040 2080 2100 G038 Figure 35. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (PCS Band) 2120 2140 2160 Frequency (MHz) 2180 2200 2220 G039 Figure 36. Adjusted carrier Feedthrough vs LO Frequency and Temperature (UMTS Band) −10 −10 Adjusted at 2600MHz − TA = 25°C TA = −40°C TA = 25°C TA = 85°C −30 Adjusted Carrier Feedthrough (dBm) Adjusted Carrier Feedthrough (dBm) −40 −10 Adjusted at 1960MHz − TA = 25°C −100 1880 −40 −50 −60 −70 −80 −90 −100 2500 2525 2550 2575 2600 2625 Frequency (MHz) 2650 2675 2700 −20 Adjusted at 3500MHz − TA = 25°C TA = −40°C TA = 25°C TA = 85°C −30 −40 −50 −60 −70 −80 −90 −100 3400 G040 Figure 37. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (2.6 GHz LTE Band) 16 TA = −40°C TA = 25°C TA = 85°C −30 G036 −10 −20 Adjusted at 942.5MHz − TA = 25°C −100 870 820 Figure 33. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (750 LTE Band) −20 −20 3425 3450 3475 3500 3525 Frequency (MHz) 3550 3575 3600 G041 Figure 38. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (WiMAX/LTE Band) Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 Typical Characteristics: Two-Tone Baseband, Mid-Band Calibration (continued) −10 −20 Adjusted at 748MHz − TA = 25°C Adjusted Sideband Suppression (dBc) Adjusted Sideband Suppression (dBc) VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. Single point adjustment mid-band. TA = −40°C TA = 25°C TA = 85°C −30 −40 −50 −60 −70 −80 −90 −100 680 700 720 740 760 780 Frequency (MHz) 800 820 Adjusted Sideband Suppression (dBc) Adjusted Sideband Suppression (dBc) −40 −50 −60 −70 −80 −90 −100 1880 1900 1920 1940 1960 1980 Frequency (MHz) 2000 2020 2040 TA = −40°C TA = 25°C TA = 85°C −30 −40 −50 −60 −70 −80 −90 2550 2575 2600 2625 Frequency (MHz) −50 −60 −70 −80 −90 890 910 2650 2675 2700 990 1010 G043 −10 −20 Adjusted at 2140MHz − TA = 25°C TA = −40°C TA = 25°C TA = 85°C −30 −40 −50 −60 −70 −80 −90 2080 2100 2120 2140 2160 Frequency (MHz) 2180 2200 2220 G045 −10 −20 Adjusted at 3500MHz − TA = 25°C TA = −40°C TA = 25°C TA = 85°C −30 −40 −50 −60 −70 −80 −90 −100 3400 G046 Figure 43. Adjusted Sideband Suppression vs LO Frequency and Temperature (2.6 GHz LTE Band) 930 950 970 Frequency (MHz) Figure 42. Adjusted Sideband Suppression vs LO Frequency and Temperature (UMTS Band) Adjusted Sideband Suppression (dBc) Adjusted Sideband Suppression (dBc) Adjusted at 2600MHz − TA = 25°C 2525 −40 G044 −10 −100 2500 −30 −100 2060 Figure 41. Adjusted Sideband Suppression vs LO Frequency and Temperature (PCS Band) −20 TA = −40°C TA = 25°C TA = 85°C Figure 40. Adjusted Sideband Suppression vs LO Frequency and Temperature (GSM900 Band) TA = −40°C TA = 25°C TA = 85°C −30 Adjusted at 942.5MHz − TA = 25°C G042 −10 −20 −20 −100 870 Figure 39. Adjusted Sideband Suppression vs LO Frequency and Temperature (750 LTE Band) Adjusted at 1960MHz − TA = 25°C −10 3425 3450 3475 3500 3525 Frequency (MHz) 3550 3575 3600 G047 Figure 44. Adjusted Sideband Suppression vs LO Frequency and Temperature (WiMAX/LTE Band) Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 17 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com 6.10 Typical Characteristics: No Baseband −140 −142 −144 −146 −148 −150 −152 −154 −156 −158 −160 −162 −164 −166 −168 −170 TA = −40°C TA = 25°C TA = 85°C 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 RF Output Noise Floor (dBm/Hz) RF Output Noise Floor (dBm/Hz) VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); and input baseband ports terminated in 50 Ω, unless otherwise noted. 4000 500 1000 1500 2000 2500 Frequency (MHz) 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 −140 −142 −144 −146 −148 −150 −152 −154 −156 −158 −160 −162 −164 −166 −168 −170 3500 4000 G032 Gain Control = Off Gain Control = On 0 500 1000 1500 2000 2500 Frequency (MHz) G033 Figure 47. Output Noise vs LO Frequency (fLO) AND LO Drive Level 3000 Figure 46. Output Noise vs LO Frequency (fLO) and Supply Voltage RF Output Noise Floor (dBm/Hz) RF Output Noise Floor (dBm/Hz) LO Power = −5 dBm LO Power = 0 dBm LO Power = 5 dBm 0 VCC = 3.15 V VCC = 3.30 V VCC = 3.45 V G031 Figure 45. Output noisE vs LO Frequency (fLO) and Temperature −140 −142 −144 −146 −148 −150 −152 −154 −156 −158 −160 −162 −164 −166 −168 −170 −140 −142 −144 −146 −148 −150 −152 −154 −156 −158 −160 −162 −164 −166 −168 −170 3000 3500 4000 G035 Figure 48. OUtput Noise vs LO Frequency (fLO) and Gain Select Setting RF Output Noise Floor (dBm/Hz) −144 LO Freq = 948.5 MHz LO Freq = 1848 MHz LO Freq = 2167 MHz −146 −148 −150 −152 −154 −156 −158 −160 −25 −20 −15 −10 −5 0 RF Output Power (dBm) 5 10 G034 Figure 49. Output Noise vs Output Power 18 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 6.11 Typical Characteristics: Two-Tone Baseband VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. 10 10 RF 2nd Harmonic RF 3rd Harmonic RF 4th Harmonic 0 −10 −20 LO Harmonic (dBm) RF Harmonic (dBc) −10 −30 −40 −50 −60 −70 −80 −20 −30 −40 −50 −60 −70 −80 −90 −90 −100 −100 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 4000 30 Distribution (%) Distribution (%) 3000 3500 4000 G049 25 20 15 10 5 290 295 300 305 310 Total Icc (mA) 315 320 0 325 290 295 300 G065 305 310 Total Icc (mA) 315 320 325 G063 Figure 53. Current Consumption Distribution Over Temperature 50 Mean =304.2 mA StDev = 5.1 TA = 25°C Mean = 28.6 dBm StDev = 0.4 45 40 Distribution (%) Distribution (%) 1500 2000 2500 Frequency (MHz) Mean =303.8 mA StDev = 6.9 Vcc = 3.3 V 35 25 20 15 10 35 30 25 20 15 10 5 0 1000 40 Mean =306.4 mA StDev = 4.4 Vcc = 3.3 V TA = 25°C 40 30 500 Figure 51. LO Harmonics vs LO Frequency (fLO) Figure 52. Nominal Current Consumption Distribution 35 0 G048 Figure 50. RF Harmonics vs LO FRequency (fLO) 60 55 50 45 40 35 30 25 20 15 10 5 0 LO 2nd Harmonic LO 3rd Harmonic LO 4th Harmonic 0 5 290 295 300 305 310 Total Icc (mA) 315 320 325 0 27.5 G064 Figure 54. Current Consumption Distribution Over VCC 28 28.5 29 29.5 OIP3 (dBm) 30 30.5 G050 Figure 55. OIP3 Distribution at fLO = 2140 MHz Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 19 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com Typical Characteristics: Two-Tone Baseband (continued) VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. 30 25 40 Mean = 65.5 dBm StDev = 0.8 Mean = 13.1 dBm StDev = 0.1 35 Distribution (%) Distribution (%) 30 20 15 10 25 20 15 10 5 0 5 0 62.5 63 63.5 64 64.5 65 65.5 66 66.5 67 67.5 68 OIP2 (dBm) G051 Figure 56. OIP2 Distribution at fLO = 2140 MHz 12.9 13 13.1 13.2 P1dB (dBm) 13.3 13.4 13.5 G052 Figure 57. P1dB Distribution at fLO = 2140 MHz, fBB = 5.5 MHz 45 30 25 12.8 Mean = −45.6 dBc StDev = 1.4 Mean = −39.3 dBm StDev = 0.8 40 Distribution (%) Distribution (%) 35 20 15 10 30 25 20 15 10 5 5 0 0 −52 −51 −50 −49 −48 −47 −46 −45 −44 −43 −42 −41 Unadjusted Sideband Suppression (dBc) G053 Figure 58. Unadjusted Sideband Suppression DIstribution at fLO = 2140 MHz 35 35 Distribution (%) Distribution (%) G054 Mean = 71.5 dBm StDev = 0.5 40 30 25 20 15 30 25 20 15 10 10 5 5 31.2 31.4 31.6 31.8 32 OIP3 (dBm) 32.2 32.4 0 69 G055 Figure 60. OIP3 Distribution at fLO = 900 MHz 20 −36 45 Mean = 31.7 dBm StDev = 0.2 40 0 −42 −41 −40 −39 −38 −37 Unadjusted Carrier Feedthrough (dBm) Figure 59. Unadjusted Carrier Feedthrough Distribution at fLO = 2140 MHz 50 45 −43 69.5 70 70.5 71 71.5 72 OIP2 (dBm) 72.5 73 73.5 74 G056 Figure 61. OIP2 Distribution at fLO = 900 MHz Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 Typical Characteristics: Two-Tone Baseband (continued) VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. 55 50 45 50 Mean = 13.2 dBm StDev = 0.1 40 Distribution (%) Distribution (%) 40 35 30 25 20 35 30 25 20 15 15 10 10 5 5 0 Mean = −43.8 dBc StDev = 0.9 45 12.9 13 13.1 13.2 13.3 P1dB (dBm) 13.4 13.5 13.6 0 −48 G057 Figure 62. P1dB distribution at fLO = 900 MHz, fBB = 5.5 MHz −47 −46 −45 −44 −43 −42 −41 Unadjusted Sideband Suppression (dBc) −40 G058 Figure 63. Unadjusted Sideband Suppression Distribution at fLO = 900 MHz 50 Mean = −48.5 dBm StDev = 4.9 45 Distribution (%) 40 35 30 25 20 15 10 5 0 −85 −80 −75 −70 −65 −60 −55 −50 −45 −40 −35 Unadjusted Carrier Feedthrough (dBm) G059 Figure 64. Unadjusted Carrier Feedthrough Distribution at fLO = 900 MHz Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 21 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com 7 Detailed Description 7.1 Overview TRF3705 is a low-noise direct quadrature modulator with high linearity, capable of converting complex modulated signals from baseband or IF directly to RF. With high-performance and superior-linearity , TRF3705 is an ideal device to up-convert to RF frequencies of 300 MHz through 4 GHz. With appropriate matching network, optimal performance can be obtained. The modulator is implemented as a double-balanced mixer. TRF3705 has a RF output block which consists of a differential-to-single-ended converter that is capable of directly driving a single-ended 50-Ω load. The TRF3705 requires a 0.25-V common-mode voltage for optimal linearity performance. With a fast power-down pin, TRF3705 can be used to reduce power dissipation in TDD application VCC GND BBIM BBIP GND GND 24 23 22 21 20 19 7.2 Functional Block Diagram PD 1 18 VCC GND 2 17 GND LOP 3 16 RFOUT S 0/90 12 GND GND 13 11 6 GND GC 10 GND BBQP 14 9 5 BBQM GND 8 GND GND 15 7 4 GND LOM 7.3 Feature Description 7.3.1 Gain Control Feature TRF3705 has a specific GC pin which is used for gain control. The GC pin is gain control digital input which is internally pulled down. When driving low or left open, modulator is in low gain mode. With driving high externally, the modulator is in high gain mode. This 1 bit gain step control feature offers a typical 3-dB gain increase in high gain mode. If power optimization is desired, driving this pin low can easily put the modulator into low gain mode. 7.4 Device Functional Modes 7.4.1 Power Down Mode TRF3705 features a PD pin to power down the modulator. The PD pin is internally pulled down. When the powerdown digital input pin is driven high, the device is off. This feature provides a fast power-down which can be used to reduce power dissipation in time division duplexing applications. 22 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information TRF3705 is a quadrature modulator for up-converting the in-phase (I) and the quadrature-phase (Q) signals to radio frequency (RF) in the transmit chain. Typically, the device is used between the digital-to-analog converter (DAC) and the RF power amplifier. 8.2 Typical Application BBI GND GND 20 19 BBIP BBIM 21 GND 22 15 5 14 6 13 GND RFOUT GND 6.8 pF RF Output 0.2 pF GND GND GND GND GND 49.9 W VCC 12 4 7 GC Thermal Pad 11 GND 16 BBQP 49.9 W 3 10 LOM 17 BBQM LOP 2 9 GND 18 GND LO Input 49.9 W 1 8 PD 23 24 VCC 49.9 W 49.9 W BBQ (1) Pin 1 (PD) and Pin 6 (GC) are internally pulled down. Figure 65. Typical Application Circuit Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 23 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com Typical Application (continued) 8.2.1 Design Requirements For this design example, use the parameters shown in Table 1. Table 1. Pin Termination Requirements and Limitations NAME PIN NO DESCRIPTION BBQM 9 Base-band in-quadrature input: negative terminal. Input impedance is 8 KΩ//4.6 pF. Optimal linearity is obtained if VCM is 0.25 V. Normally terminated in 50 Ω BBQP 10 Base-band in-quadrature input: positive terminal. Input impedance is 8 KΩ//4.6 pF. Optimal linearity is obtained if VCM is 0.25 V. Normally terminated in 50 Ω LOP 3 Local oscillator input: positive terminal. This is preferred port when driving single ended. Normally AC coupled and terminated in 50 Ω LOM 4 Local oscillator input: negative terminal. When driving LO single-ended, normally AC coupled and terminated in 50 Ω. RFOUT 16 RF output. Normally using optimal matching circuits to match RF output to 50 Ω. Normally AC coupled. GC 6 Gain control digital input. Internally pulled down. When driving high, get 3 dB gain increase of RF output. PD 1 Power down digital input. Internally pulled down. When driving high, the modulator is off. VCC 18,24 3.3-V power supply. Can be tied together and source from a single clean supply. Each pin should be properly RF bypassed and decoupled. 8.2.2 Detailed Design Procedure 8.2.2.1 Baseband Inputs The baseband inputs consist of the in-phase signal (I) and the Quadrature-phase signal (Q). The I and Q lines are differential lines that are driven in quadrature. The nominal drive level is 1-VPP differential on each branch. The baseband lines are nominally biased at 0.25-V common-mode voltage (VCM); however, the device can operate with a VCM in the range of 0 V to 0.5 V. The baseband input lines are normally terminated in 50 Ω, though it is possible to modify this value if necessary to match to an external filter load impedance requirement. 8.2.2.2 LO Input The LO inputs can be driven either single-ended or differentially. There is no significant performance difference between either option with the exception of the sideband suppression. If driven single-ended, either input can be used, but LOP (pin 3) is recommended for best broadband performance of sideband suppression. When driving in single-ended configuration, simply ac-couple the unused port and terminate in 50 Ω. The comparison of the sideband suppression performance is shown in Figure 71 for driving the LO single-ended from either pin and for driving the LO input differentially. 8.2.2.3 RF Output The RF output must be ac-coupled and can drive a 50-Ω load. The suggested output match provides the best broadband performance across the frequency range of the device. It is possible to modify the output match to optimize performance within a selected band if needed. The optimized matching circuits are to match the RF output impedances to 50 Ω. Figure 72 shows a slightly better OIP3 performance at the frequency above 1850 MHz with an 0.2-pF matching capacitor. 24 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 8.2.2.4 350-MHz Operation A different matching circuit, as shown in Figure 66, could also be applied to improve the performance for the frequency from 300 MHz to 400 MHz. PD 180 pF 40 nH LO Input GND LOP 2.2 pF LOM 49.9 W GND GC 1 18 2 17 3 16 4 15 5 14 6 13 VCC GND 39 pF RF Output RFOUT 18 pF GND GND GND Figure 66. Matching Components for Operation Centered at 350 MHz Figure 73 and Figure 74 show a slight improvement in OIP3 performance at frequencies above 1850 MHz with an 0.2-pF matching capacitor. 8.2.2.5 DAC to Modulator Interface Network For optimum linearity and dynamic range, a digital-to-analog converter (DAC) can interface directly with the TRF3705 modulator. It is imperative that the common-mode voltage of the DAC and the modulator baseband inputs be properly maintained. With the proper interface network, the common-mode voltage of the DAC can be translated to the proper common-mode voltage of the modulator. The TRF3705 common-mode voltage is typically 0.25 V, and is ideally suited to interface with the DAC3482/3484 (DAC348x) family because the common-mode voltages of both devices are the same; there is no translation network required. The interface network is shown in Figure 67. LO 50 W 50 W 50 W 50 W DAC348x 0/90 50 W 50 W 50 W 50 W S TRF3705 Figure 67. DAC348x Interface with the TRF3705 Modulator The DAC348x requires a load resistor of 25 Ω per branch to maintain its optimum voltage swing of 1-VPP differential with a 20-mA max current setting. The load of the DAC is separated into two parallel 50-Ω resistors placed on the input and output side of the low-pass filter. This configuration provides the proper resistive load to the DAC while also providing a convenient 50-Ω source and load termination for the filter. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 25 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com 8.2.2.6 DAC348x with TRF3705 Modulator Performance The combination of the DAC348x driving the TRF3705 modulator yields excellent system parameters suitable for high-performance applications. As an example, the following sections illustrate the typical modulated adjacent channel power ratio (ACPR) for common telecom standards and bands. These measurements were taken on the DAC348x evaluation board. 8.2.2.6.1 WCDMA The adjacent channel power ratio (ACPR) performance using a single-carrier WCDMA signal in the UMTS band is shown in Figure 68. Figure 68. Single-Carrier WCDMA ACPR, IF = 30 MHz, LO Frequency = 2110 MHz A marginal improvement in OIP3 and output noise performance can be observed by increasing the LO drive power, resulting in slightly improved ACPR performance. The ACPR performance versus LO drive level is plotted in Figure 75 across common frequencies to illustrate the amount of improvement that is possible. 26 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 8.2.2.6.2 LTE ACPR performance using a 10 MHz LTE signal in the 700-MHz band is shown in Figure 69. Figure 69. 10 MHz LTE ACPR, IF = 30 MHz, LO Frequency = 718 MHz 8.2.2.6.3 MC-GSM ACPR performance using a four-carrier MC-GSM signal in the 1800-MHz band is shown in Figure 70. Figure 70. Four-Carrier MC-GSM, IF = 30 MHz ACPR, LO Frequency = 1812 MHz Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 27 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com 8.2.3 Application Curves 0 34 VCM = 0.25 V VCC = 3.3 V LO = 0 dBm GC = Off −10 LOP_SE LOM_SE LO_Diff 32 30 26 OIP3 (dBm) Unadjusted SBS (dB) 28 −20 −30 24 22 20 −40 18 16 −50 VCM = 0.25 V VCC = 3.3 V LO = 0 dBm GC = Off 14 12 −60 0 500 1000 1500 2000 2500 Frequency (MHz) 3000 3500 10 4000 0 500 1000 With 0.2 pF cap Without 0.2 pF cap 1500 2000 2500 Frequency (MHz) 3000 3500 4000 G067 G068 Figure 71. Unadjusted Sideband Suppression (SBS) vs LO Drive Options Figure 72. OIP3 with and without a Shunt 0.2-pF Matching Capacitor at the RF Port 40 4 TA = −40°C TA = 25°C TA = 85°C 2 35 VCM = 0.25 V VCC = 3.3 V LO = 0 dBm GC = Off TA = −40°C TA = 25°C TA = 85°C 30 OIP3 (dBm) Output Power (dBm) 0 −2 −4 25 20 −6 VCM = 0.25 V VCC = 3.3 V LO = 0 dBm GC = Off −8 −10 200 250 300 350 400 Frequency (MHz) 450 15 10 200 500 250 300 350 400 Frequency (MHz) G069 450 500 G070 Figure 73. Output Power with 350-MHz Matching Circuit Figure 74. OIP3 with 350-MHz Matching Circuit −75 VCM = 0.25 V VCC = 3.3 V LO = 0 dBm GC = Off Adjacent Channel Power ratio (dBc) −76 748 MHz 942.5 MHz 1960 MHz 2140 MHz 2600 MHz −77 −78 −79 −80 −81 −5 0 5 LO Power (dBm) 10 15 G071 Figure 75. Single-Carrier WCDMA ACPR Performance vs LO Power 28 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 9 Power Supply Recommendations The TRF3705 is powered by supplying a nominal 3.3 V to pins 18 and 24. These supplies can be tied together and sourced from a single clean supply. Proper RF bypassing should be placed close to each power supply pin. Ground pin connections should have at least one ground via close to each ground pin to minimize ground inductance. The PowerPAD™ must be tied to ground, preferably with the recommended ground via pattern to provide a good thermal conduction path to the alternate side of the board and to provide a good RF ground for the device. (Refer to Layout Guidelines for additional information.) Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 29 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com 10 Layout Populated RoHS-compliant evaluation boards are available for testing the TRF3705 as a stand-alone device. Contact your local TI representative for information on ordering these evaluation modules, or see the TRF3705 product folder on the TI website. In addition, the TRF3705 can be evaluated with the DAC348x (quad/dual 16-bit, 1.25GSPS) EVM driving the baseband inputs through a seamless interface at 0.25V common-mode voltage. 10.1 Layout Guidelines The TRF3705 device is fitted with a ground slug on the back of the package that must be soldered to the printed circuit board (PCB) ground with adequate ground vias to ensure a good thermal and electrical connection. The recommended via pattern and ground pad dimensions are shown in Figure 76. The recommended via diameter is 10 mils (0.10 in or 0,25 mm). The ground pins of the device can be directly tied to the ground slug pad for a low-inductance path to ground. Additional ground vias may be added if space allows. Decoupling capacitors at each of the supply pins are strongly recommended. The value of these capacitors should be chosen to provide a low-impedance RF path to ground at the frequency of operation. Typically, the value of these capacitors is approximately 10 pF or lower. The device exhibits symmetry with respect to the quadrature input paths. It is recommended that the PCB layout maintain this symmetry in order to ensure that the quadrature balance of the device is not impaired. The I/Q input traces should be routed as differential pairs and the respective lengths all kept equal to each other. On the RF traces, maintain proper trace widths to keep the characteristic impedance of the RF traces at a nominal 50 Ω. 10.2 Layout Example Æ 0,254 0,508 1,16 2,45 2,45 0,508 1,16 Note: Dimensions are in millimeters (mm). Figure 76. PCB Ground Via Layout Guide 30 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 TRF3705 www.ti.com SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 11 Device and Documentation Support 11.1 Device Support 11.1.1 Definition of Specifications 11.1.1.1 Carrier Feedthrough This specification measures the power of the local oscillator component that is present at the output spectrum of the modulator. The performance depends on the dc offset balance within the baseband input lines. Ideally, if all of the baseband lines were perfectly matched, the carrier (that is, the LO) would be naturally suppressed; however, small dc offset imbalances within the device allow some of the LO component to feed through to the output. This parameter is expressed as an absolute power in dBm, and is independent of the RF output power and the injected LO input power. It is possible to adjust the baseband dc offset balance to suppress the output carrier component. Devices such as the DAC348x DAC family have dc offset adjustment capabilities specifically for this function. The Adjusted Carrier Feedthrough graphs (see Figure 33 through Figure 38) optimize the performance at the center of the band at room temperature. Then, with the adjusted dc offset values held constant, the parameter is measured over the frequency band and across the temperature extremes. The typical performance plots provide an indication of how well the adjusted carrier suppression can be maintained over frequency and temperature with only one calibration point. 11.1.1.2 Sideband Suppression This specification measures the suppression of the undesired sideband at the output of the modulator relative to the desired sideband. If the amplitude and phase within the I and Q branch of the modulator were perfectly matched, the undesired sideband (or image) would be naturally suppressed. Amplitude and phase imbalance in the I and Q branches result in the increase of the undesired sideband. This parameter is measured in dBc relative to the desired sideband. It is possible to adjust the relative amplitude and phase balance within the baseband lines to suppress the unwanted sideband. Devices such as the DAC348x DAC family have amplitude and phase adjustment control specifically for this function. The Adjusted Sideband Suppression graphs (refer to Figure 39 through Figure 44) optimize the performance at the center of the band at room temperature. Then, with the adjusted amplitude and phase values held constant, the parameter is measured over the frequency band and across the temperature extremes. The performance plots provide an indication of how well the adjusted sideband suppression can be maintained over frequency and temperature with only one calibration point. 11.1.1.3 Output Noise The output noise specifies the absolute noise power density that is output from the RFOUT pin (pin 16). This parameter is expressed in dBm/Hz. This parameter, in conjunction with the OIP3 specification, indicates the dynamic range of the device. In general, at high output signal levels the performance is limited by the linearity of the device; at low output levels, on the other hand, the performance is limited by noise. As a result of the higher gain and output power of the TRF3705 compared to earlier devices, it is expected that the noise density is slightly higher as well. With its increased gain and high OIP3 performance, the overall dynamic range of the TRF3705 is maintained at exceptional levels. 11.1.1.4 Definition of Terms A simulated output spectrum with two tones is shown in Figure 77, with definitions of various terms used in this data sheet. Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 31 TRF3705 SLWS223B – AUGUST 2011 – REVISED NOVEMBER 2015 www.ti.com IM es ire d Si gn al D U nw an te d Si de ba nd 3 2n d rd O O rd er rd er IM Device Support (continued) = = H nd L nd L rd F2 F1 22F O = +L H 2 rd O F 3 F BB + L = 1 F2 BB F2 F = F1 LO )+ F1 = 2 1 BB -F F3 F2 LO B2 B2 B (F B (F + FB LO )+ Baseband Frequency RF Frequency 3rd Order Intermodulation Product Frequency (High Side / Low Side) 2nd Order Intermodulation Product Frequency (High Side / Low Side) Local Oscillator Frequency Lower Sideband Frequency B1 B1 B -F 2 B LO F B – = B1 LO LS 2 = B LS FBBn = Fn = F3rdH/L = F2ndH/L = LO = LSBn = f Figure 77. Graphical Illustration of Common Terms 11.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.3 Trademarks PowerPAD, E2E are trademarks of Texas Instruments. All other trademarks are the property of their respective owners. 11.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 32 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated Product Folder Links: TRF3705 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TRF3705IRGER ACTIVE VQFN RGE 24 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF3705 IRGE TRF3705IRGET ACTIVE VQFN RGE 24 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF3705 IRGE (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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